TW201840876A - Deposition source and deposition apparatus having the same - Google Patents

Abstract

A deposition source according to the present disclosure is provided inside a process chamber for evaporating a deposition material so as to deposit the deposition material on a substrate. The deposition source includes: a diffusion container having a predetermined length and defining therein a diffusion space in which the evaporated deposition material is diffused, at least one opening being formed in the diffusion container; a nozzle portion coupled to the opening of the diffusion container and including a plurality of nozzles disposed along a longitudinal direction of the diffusion container so as to inject the deposition material diffused in the diffusion container; and a heating portion installed outside the diffusion container, and including a heater configured to heat the deposition material contained in the diffusion container by heating the diffusion container and a heat shield portion installed to surround the heater so as to prevent heat generated from the heater from being emitted outwards. Assuming that a surface opposite a portion, to which the nozzle portion is coupled, in the diffusion container is a bottom surface, the plurality of nozzles is arranged linearly so as to be spaced apart from a longitudinal center line of the bottom surface of the diffusion container. Accordingly, utilization of the deposition source in terms of arrangement thereof within the deposition chamber can be enhanced, and uniformity of thin film deposition can be improved.

Description

Deposition source and deposition apparatus having the deposition source

The present application is related to a deposition source for evaporating a deposition material forming a thin film on a surface of a substrate and a deposition apparatus including the deposition source.

The deposition apparatus refers to a substrate (for example, a wafer for manufacturing a semiconductor device, a substrate for manufacturing an LCD, or for use) by, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), or vapor deposition. A device for forming a film on the surface of a substrate on which an OLED is fabricated.

Further, in the case of a substrate for manufacturing an OLED, a process of forming a thin film on the surface of a substrate by evaporating an organic substance, an inorganic substance, a metal, or the like in deposition of a deposition material is often used.

A deposition apparatus for forming a thin film by evaporating a deposition material includes a deposition chamber in which a deposition target substrate is loaded and a deposition source for heating the deposition material to evaporate the deposition material to the substrate. The deposition apparatus performs substrate processing in which a deposition material is evaporated to form a thin film on a surface of a substrate.

Further, the deposition source used in the deposition apparatus is an element mounted inside the deposition chamber and evaporating the deposition material by heating the deposition material to evaporate the deposition material to the substrate. Depending on the evaporation method, various structures as disclosed in Korean Patent Publication Nos. 10-2009-0015324 and 10-2004-0110718, etc., may be employed.

In particular, with the increase in productivity and the demand for large panels, substrates for manufacturing OLEDs have been expanded, and deposition equipment has also been expanded. Accordingly, there is a need for an optimized structure that enables an expanded deposition apparatus to perform a deposition process for depositing a uniform film. However, there is a problem that it is difficult to use an existing structure for performing a deposition process for depositing a uniform film.

Further, when two or more kinds of deposition materials are mixed or synthesized and deposited on the surface of the substrate, the substrate is enlarged and the interval between sources for evaporating various deposition materials is thus increased. Therefore, since the mixing or synthesis of two or more kinds of deposition materials cannot be smoothly performed, there is a problem that it is difficult to form a vapor-deposited film having desired physical properties.

Further, in the conventional deposition apparatus, there is a problem that it is difficult to perform the processing required for maintenance by separating the deposition source when maintenance is required after using the deposition apparatus.

technical problem

The present application has been made in order to solve the above problems, and an aspect of the present application provides a deposition apparatus including a deposition source and a plurality of nozzles disposed and configured to provide a deposited material for evaporation. The diffusion container of the diffusion space makes it possible to uniformly diffuse the evaporated deposition material before injecting the deposition material from the nozzle.

Another aspect of the present application is to provide a deposition source that is a linear source in which a nozzle for injecting a deposition material is linearly arranged while a deposition source is disposed, and the nozzle is set to be a linear source The centerline of the bottom surface deviates to one side, so that the utilization of the deposition source can be improved with respect to the arrangement of the deposition sources in the deposition chamber.

Another aspect of the present application is to provide a deposition apparatus including a pair of linear deposition sources configured to evaporate deposition material to deposit a deposition material on a substrate and between centerlines of the pair of linear deposition sources a plurality of nozzles thereby minimizing the spacing between the pair of deposition sources.

Another aspect of the present application is to provide a deposition apparatus in which a heating portion of a deposition material for heating a deposition source is configured with at least two heating assemblies, the at least two heating assemblies being capable of a plurality of nozzles along the plurality of nozzles The coupling is such that the direction of the deposition source can be maintained to be coupled or separated from each other to reduce the maintenance cost required to install the deposition apparatus as needed by separating the heating components. Technical solution

According to the present application, there is provided a deposition source 200 disposed inside a processing chamber 100 for evaporating a deposition material to deposit a deposition material on a substrate S. The deposition source includes: a diffusion container 210 having a predetermined length and a diffusion space defined therein, the diffusion space diffusing the evaporated deposition material to form at least one opening in the diffusion container 210; the nozzle portion 220, the nozzle portion 220 coupled Connecting to the opening of the diffusion container 210 and including a plurality of nozzles disposed along the longitudinal direction of the diffusion container 210 to spray the deposition material diffused in the diffusion container 210; and a heating portion installed outside the diffusion container 210 And including a heater 230 configured to heat the deposition material contained in the diffusion container 210 by heating the diffusion container 210 and the heat shielding portion 240 installed around the heater 230 to prevent the heater 230 from being generated. The heat diverges outward. It is assumed that a portion of the opposite surface of the diffusion container 210 coupled to the nozzle portion 220 is a bottom surface, the centers of the plurality of nozzles are spaced apart from the longitudinal center line l of the bottom surface of the diffusion container 210, and the plurality of nozzles are arranged to face For the substrate S.

The deposition source 200 may further include a deposition material supply portion 300 configured to accommodate the deposition material and coupled to one side of the diffusion container 210 to supply the deposition material to the diffusion container 210.

The heating portion can be configured with at least two heating assemblies that can be coupled or separated from one another in the direction in which the plurality of nozzles are coupled.

The heat shield portion 240 may include a reflector 242 disposed outside the heater 230 to reflect heat radiated from the heater 230 toward the diffusion container 210 and a cooling portion 244 disposed outside the reflector 242.

The diffusion container 210 may have any one of a rectangular shape and a trapezoidal cross-sectional shape perpendicular to the longitudinal direction of the diffusion container 210.

The diffusion container 210 may have a trapezoidal cross-sectional shape perpendicular to the longitudinal direction of the diffusion container 210, and the diffusion container 210 has a side inclined with respect to the bottom surface of the diffusion container 210 and a remaining side perpendicular to the bottom surface.

The heat shield portion 240 may have a shape corresponding to the trapezoidal cross-sectional shape of the diffusion container 210.

The heating portion may include a first heating assembly 250 mounted on the bottom surface and on a remaining side perpendicular to the bottom surface, and a second heating assembly 260 mounted on the remaining two surfaces, and the first heating assembly 250 may be capable of The plurality of nozzles are coupled to the second heating assembly 260 or separated from the second heating assembly 260 by being coupled to the direction of the diffusion container 210.

According to the present application, there is provided a deposition apparatus comprising: a processing chamber 100 configured to provide a space in which deposition material is deposited on a substrate S; and according to any one of claims 1 to 8 A pair of deposition sources 200, the pair of deposition sources 200 configured to vaporize the deposition material such that the deposition material is deposited onto the substrate S. A plurality of nozzles are located between the centerlines 1 of the pair of deposition sources 200, and the pair of deposition sources 200 can evaporate different deposition materials.

The deposition material evaporated by one of the pair of deposition sources 200 may be silver, and the deposition material evaporated by the remaining deposition source may be magnesium. Advantageous effects of the invention

According to the present application, a deposition apparatus includes a deposition source and a diffusion vessel, the diffusion vessel being provided with a plurality of nozzles and configured to provide a diffusion space for the evaporated deposition material. Therefore, the uniformity of the film can be improved by uniformly diffusing the evaporated deposition material before injecting the evaporated deposition material from the nozzle.

According to the present application, the deposition source is a linear source, wherein when the deposition source is configured, the nozzles for injecting the deposition material are linearly arranged, and the nozzles are arranged to deviate from the center line of the bottom surface of the linear source to one side. Thus, the utilization of the deposition source can be improved with regard to the arrangement of the deposition sources in the deposition chamber.

According to the present application, a deposition apparatus includes: a pair of linear deposition sources configured to evaporate deposition material such that deposition material is deposited on a substrate; and a plurality of nozzles located at the pair of linear deposition sources Between the centerlines. Therefore, the interval between a pair of deposition sources can be minimized.

Further, according to the present application, the heating portion of the deposition material for heating the deposition source is configured with at least two heating assemblies that can be coupled or separated from each other in a direction in which the plurality of nozzles are coupled, This makes it possible to promote the maintenance of the deposition source. Therefore, the maintenance cost required to install the deposition apparatus can be reduced by separating the heating components as needed.

Hereinafter, embodiments of the present application will be described with reference to additional drawings. 1 is a vertical cross-sectional view of a deposition apparatus according to an embodiment of the present application, FIG. 2 is a vertical cross-sectional view of a deposition apparatus according to another embodiment of the present application, and FIG. 3 is a deposition apparatus of FIG. A vertical cross-sectional view of deposition source 200. 4 is a cross-sectional view taken along the I-I direction of the deposition source 200 of the deposition apparatus of FIG. 1, and FIG. 5 is a cross-sectional view showing a part of the configuration of the deposition source 200 of FIG.

As shown in FIG. 1, a deposition apparatus according to an embodiment of the present application is a device for depositing a deposition material on a substrate S (the deposition apparatus can still be configured differently).

According to an embodiment, the deposition apparatus may include a processing chamber 100 configured to provide a space for depositing a deposition material on the substrate S, a deposition source 200 that is mounted in the processing chamber The chamber 100 is configured to vaporize the deposited material such that the deposited material is deposited on the substrate S.

The substrate S to be processed is a substrate S (such as an OLED substrate and an LCD substrate) that requires substrate processing by vapor deposition, and various configurations of the substrate S to be processed can be performed. For example, the substrate may be configured to be transferred separately or in a state of being disposed on the carrier 20, and the like.

The processing chamber 100 is an element that provides a space configured to deposit a deposition material on the substrate S, and various configurations of the processing chamber 100 can be performed.

In an embodiment, the processing chamber 100 can be configured with a container defining a predetermined interior space and provided with at least one gate such that the substrate S can pass through the gate into and out of the interior space.

Additionally, the processing chamber 100 can include an exhaust member to maintain the pressure therein at a predetermined level.

On the other hand, the entry and exit of the substrate S with respect to the processing chamber 100 can be performed by a robot (not shown), or can be performed in a state where the substrate S is disposed on the carrier 20.

According to an embodiment, when the substrate S is moved in and out of the processing chamber 100 by a robot (not shown), a support portion (not shown) may be provided in the processing chamber 100 to support the substrate S.

According to another embodiment, the entry and exit of the substrate S with respect to the processing chamber 100 may be performed in a state where the substrate S is disposed on the carrier 20.

The carrier 20 is an element that is mounted to be movable in a state in which the substrate S is located thereon and may have various configurations.

According to an embodiment, as shown in FIG. 1, the carrier 20 may include an electrostatic chuck that attracts and fixes the substrate S, and a power application portion (not shown) or the like that applies DC power to the electrostatic chuck.

The electrostatic chuck is an element that attracts and fixes the substrate S by electrostatic force when the substrate S is transferred by the carrier. The electrostatic chuck receives power from a power application portion or an external DC power source provided in the carrier 20 to generate an electrostatic force.

At the same time, the carrier 20 can transfer the substrate S by various methods such as horizontal movement and vertical movement.

At this time, the processing chamber 100 may be provided with a moving structure for supporting and moving the carrier 20 in accordance with the moving method of the substrate S.

According to an embodiment, the processing chamber 100 may be provided with a moving structure that supports the carrier 20 at its opposite side with respect to the direction of movement of the carrier 20 such that when the substrate S moves horizontally, the carrier 20 is also horizontal mobile.

According to another embodiment, in the processing chamber 100, when the substrate S is vertically moved as shown in FIG. 1, the substrate can be transferred by linearly moving the guiding portion 410 and the magnetic force generating portion 430, the linear moving guiding portion 410 supporting the carrier The lower portion of 20 allows the carrier 20 to move linearly, and the magnetic force generating portion 430 maintains the verticality of the carrier 20 in the processing chamber 100 by the magnetic force in a non-contact state with the magnetic reaction member 22 disposed above the carrier 20. Can move linearly.

The linear movement guiding portion 410 is mounted in the process chamber 100 in a linearly movable manner, and the linear movement guiding portion 410 may have various structures depending on the method of supporting the lower portion of the carrier 20.

As an example, the linear movement guiding portion 410 may include a plurality of transfer rollers supporting the lower portion of the carrier 20 and a drive motor 420 coupled to at least one of the plurality of transfer rollers to drive the plurality of transfer rollers.

Specifically, the linear motion guiding portion 410 may be installed such that a rotating shaft of at least one of the plurality of transfer rollers and the driving motor 420 are coupled to each other to drive the plurality of transfer rollers.

Here, when the magnetic reaction member 22 is formed of a material including a magnetic material that can be magnetized in a magnetic field, the magnetic reaction member 22 can be formed in various structures and shapes.

The magnetic reaction member 22 may include a magnetic material having excellent high temperature characteristics.

Further, the magnetic reaction member 22 can be mounted by being coupled to the support portion 24 that protrudes in one lateral direction of the carrier 20.

At this time, the magnetic reaction member 22 may be supported by the support 24 provided to maintain the horizontal position of the carrier 20.

The support portion 24 can have various structures as long as the support portion 24 is mounted on the upper side of the carrier 20 such that the magnetic reaction member 22 can maintain the horizontal position of the carrier 20.

As an example, the support portion 24 may protrude in one lateral direction of the carrier 20 to be coupled to the magnetic reaction member 22.

The deposition source 200 is an element that is mounted in the processing chamber 100 and evaporates the deposition material to deposit the deposition material on the substrate S.

The deposition source 200 may be configured to evaporate the deposition material in a fixed state to the substrate S moving in the processing chamber 100 or to evaporate the deposition material while moving relative to the fixed substrate S in the processing chamber 100.

Regarding the rectangular substrate S, the deposition source 200 may be formed using a direction parallel to one side as a longitudinal direction, the side being perpendicular to the moving direction of the substrate S with respect to the substrate S.

As an example, the deposition source 200 is an element that evaporates a deposition material including at least one of an organic material, an inorganic material, and a metal material according to deposition conditions, and the deposition source 200 may include a crucible having a deposition material therein and heating the crucible Heater 230.

According to an embodiment, the deposition source 200 is a so-called linear source, and the deposition source 200 may include a diffusion vessel 210 having a predetermined length, the diffusion vessel 210 including at least one opening and forming a diffusion in which the evaporated deposition material diffuses therein a space; coupled to the opening in the diffusion container 210 and including a plurality of nozzles disposed along the longitudinal direction of the diffusion container 210 for injecting a nozzle portion 220 of the deposition material diffused in the diffusion container 210; a heater 230, the heater 230 Provided on the outside of the diffusion container 210 to heat the diffusion container 210, thereby heating the deposition material contained in the diffusion container 210; and a heating portion 230 including the heat shielding portion 240, which is installed to surround the heater 230 to prevent The heat generated from the heater 230 is diverged to the outside.

The diffusion container 210 is an element having a predetermined length including at least one opening formed therein and providing a space for diffusion of deposition material deposited on the substrate S and may be configured differently.

The material of the diffusion vessel 210 is determined according to the physical properties of the deposited material, and any material may be used as long as the material can withstand high temperatures.

In addition, the diffusion container 210 may have various shapes such as a rectangular parallelepiped shape and a cylindrical shape and have at least one opening formed on one side thereof to be coupled with the nozzle portion 220.

An opening may be formed in the diffusion container 210 to be coupled to the nozzle portion 220 on a side facing the substrate S such that deposition material evaporated in the diffusion container 210 is injected through the nozzle.

The nozzle portion 220 is an element that is coupled to an opening in the diffusion vessel 210 and that is configured to inject a deposition material that evaporates from the diffusion vessel 210.

In addition, the nozzle portion 220 may include a plurality of nozzles disposed along the longitudinal direction of the diffusion container 210.

A plurality of nozzles are disposed along the longitudinal direction of the diffusion container 210, and the plurality of nozzles are configured to inject a deposition material evaporated from the diffusion container 210 such that the evaporated deposition material is deposited on the substrate S.

The material of the nozzle may be any one of tantalum, stainless steel, titanium, and inconel alloy.

At this time, a plurality of nozzles may be arranged in parallel to a side perpendicular to the moving direction of the substrate S, the moving direction being relative to the rectangular substrate S.

The heating portion is an element mounted around the diffusion vessel 210 to heat and evaporate the deposition material contained in the diffusion vessel 210, and the element can be configured in various ways.

According to an embodiment, the heating portion may be installed outside the diffusion container 210 to heat the diffusion container 210, thereby evaporating the deposition material contained in the diffusion container 210, or maintaining the evaporated deposition material at a predetermined temperature such that the evaporated deposition The material does not condense into a liquid.

Specifically, the heating portion may include a heater 230 disposed outside the diffusion container 210 to heat the diffusion container 210, thereby heating the deposition material accommodated in the diffusion container 210 and the heat shielding portion 240 installed around the heater 230 to prevent The heat generated from the heater 230 is diverged to the outside.

The heater 230 includes a heat generating member such as a hot wire to generate heat when power is supplied from the outside, and the heater 230 is installed around the diffusion container 210. However, the heater 230 can be configured in various configurations.

The heat shield portion 240 is configured to prevent heat generated from the heater 230 from being diverged to the outside, and various configurations of the heat shield portion 240 can be performed.

The heat shield portion 240 may be disposed on the entire remaining surface other than the nozzle opening formed in the nozzle portion 220 of the diffusion container 210.

As an example, the heat shield portion 240 may include a reflector 242 disposed outside the heater 230 to reflect heat radiated from the heater 230 toward the diffusion container 210 and a cooling portion 244 disposed outside the reflector 242.

The reflector 242 is an element that is mounted outside the hot wire of the heater 230 to surround the hot wire and reflects heat radiated from the heater 230 to prevent heat from being dissipated to the outside, and the reflector 242 can be configured in various ways.

The reflector 242 may be configured with a reflective plate made of a metal such as tantalum, AlN, PBN or tungsten, but is not limited thereto.

Of course, the reflector 242 is not an indispensable component of the present application.

The cooling portion 244 is an element that is installed outside the diffusion container 210 or the reflector 242 to prevent heat generated from the heater 230 from being diverged to the outside to cool the side of the diffusion container 210 to a predetermined temperature, and the cooling portion 244 can be variously configured.

Various cooling systems such as an air cooling system or a water cooling system can be applied to the cooling portion 244.

The cooling portion 244 can take various configurations (such as a cooling module built into the cooling plate and the coolant circulates) to cool the heat generated by the heater 230.

Meanwhile, the deposition source 200 according to the present application may further include a deposition material containing portion that accommodates the deposition material and is coupled to one side of the diffusion container 210 to supply the deposition material to the diffusion container 210.

The deposition material supply portion 300 is configured to accommodate the deposition material therein, and the deposition material supply portion 300 is coupled to one side of the diffusion container 210 except for one surface coupled to the nozzle portion of the diffusion container 210, so that The deposition material is supplied to the diffusion container 210, and various configurations can be made to the deposition material supply portion 300.

The deposition material supply portion 300 may be coupled to the lower surface of the diffusion container 210 in a vertical state as shown in FIGS. 1 and 3.

The deposition material supply portion 300 may include a heating portion disposed around the diffusion container 210.

The heating portion disposed around the deposition material supply portion 300 may be integrally formed with the heating portion installed in the diffusion container 210 or may be configured as a separate member.

The deposition material contained in the deposition material supply portion 300 may be evaporated by the heating portion to supply the deposition material to the diffusion container 210.

The component symbol 302 not described above represents a support member that fixes and supports the deposition material supply portion 300.

In the embodiment of the present application, the structure in which the deposition material is supplied to the diffusion container 210 by the separate deposition material supply portion 300 has been described. Alternatively, the deposition may be accommodated in the diffusion container 210 without the deposition material supply portion 300, and may be evaporated by heating the portion.

On the other hand, depending on the deposition process, it may be necessary to mix and deposit two or more deposition materials on the substrate S.

To this end, the processing chamber 100 can include two or more deposition sources that are arranged to correspond to respective deposition materials.

According to an embodiment, the deposition apparatus can include a pair of deposition sources 200 for evaporating different deposition materials in the processing chamber 100.

According to a more specific embodiment, the deposition material evaporated by one of the pair of deposition sources 200 is silver, and the deposition material evaporated by the remaining deposition source 200 may be magnesium.

On the other hand, in order to form a good deposited film, it is necessary to uniformly mix two or more kinds of deposition materials, and in this case, it is desirable to minimize the interval between the plurality of deposition sources, the plurality of deposition sources. The different deposition materials are evaporated separately.

According to an embodiment, a plurality of nozzles in the nozzle portion 220 may be located between the centerlines 1 of a pair of deposition sources 200 as a method of minimizing a plurality of intervals between deposition sources that respectively evaporate different deposition materials.

As a structure in which a plurality of nozzles in the nozzle portion 220 are located between the center lines 1 of the pair of evaporator sources 200, assuming that the surface facing the portion of the diffusion container 210 coupled to the nozzle portion 220 is the bottom surface, the plurality of nozzles may be It is disposed to be spaced apart from the longitudinal centerline 1 of the bottom surface of the diffusion vessel 210.

According to a particular embodiment, the distance w between each nozzle portion 220 can be 20 mm (or greater) and 200 mm (or smaller).

Meanwhile, as shown in FIGS. 1 and 4, the diffusion container 210 may have any one of a rectangular shape and a trapezoidal cross-sectional shape perpendicular to the longitudinal direction of the diffusion container 210.

According to the embodiment of FIG. 1, the diffusion vessel 210 can have a trapezoidal cross-sectional shape that is perpendicular to the longitudinal direction of the diffusion vessel 210. In this case, one side surface of the diffusion container 210 is inclined with respect to the bottom surface, and the other side surface of the diffusion container 210 is perpendicular to the bottom surface. Further, an opening is formed in a surface opposite to the bottom surface, and the nozzle portion 220 is coupled to the opening.

When the deposition source 200 has the above structure, the interval between the nozzles in the nozzle portion 220 between adjacent deposition sources 200 can be minimized.

Further, when the interval between the nozzles in the nozzle portion 220 between the adjacent deposition sources 200 is minimized, the deposition materials evaporated from the respective deposition sources are sufficiently mixed with each other, so that the mixed deposition materials can be deposited on the substrate S, Thereby, a uniform deposited film is formed on the substrate S.

Meanwhile, when the deposition source 200 described in the embodiment of the present application requires maintenance, the elements of the deposition source 200 need to be separated from each other.

Therefore, in the deposition source 200 according to the present application, the heating portion may be configured with at least two heating assemblies that may be coupled or separated from each other in the coupling direction of the plurality of nozzles.

Specifically, the heating portion may be configured with a first heating assembly 250 including a first heater 230a and a first heat shielding portion and a second heating assembly 260 including a second heater 230b and a second heat shielding portion.

The first heating assembly 250 can be configured as a single module including the first heater 230a and the first shield portion.

The first heat shield portion of the first heating assembly 250 can include a first reflector 242a and a first cooling portion 244a.

Similarly, the second heating assembly 260 can include a single module that includes a second heater 230b and a second thermal shield portion.

The second heat shield portion of the second heating assembly 260 can include a second reflector 242b and a second cooling portion 244b.

At this time, the first heating assembly 250 and the second heating assembly 260 may be configured independently of each other and may be connected to different power sources to receive power.

As shown in FIG. 5, in order to prevent nozzle interference, the first heating assembly 250 and the second heating assembly 260 may be formed along the longitudinal direction of the diffusion container 210 to be coupled along the nozzle portion 220 to the opening in the diffusion container 210. Coupled or separated from each other.

Further, when the diffusion container 210 has, for example, a trapezoidal cross-sectional shape, the heating portion may have a trapezoidal shape corresponding to, for example, a trapezoidal shape of the diffusion container 210.

When the diffusion container 210 has a quadrangular (rectangular or trapezoidal) cross-sectional shape, the longitudinal boundary between the first heating assembly 250 and the second heating assembly 260 may be parallel to the longitudinal direction of the diffusion container 210, the first heating assembly 250 and the This boundary between the second heating assemblies 260 can be formed (but not exclusively formed) with respect to the diagonal of the cross section of the diffusion vessel 210.

That is, a boundary between the first heating assembly 250 and the second heating assembly 260 may be formed to be parallel to one side of the cross section of the diffusion container 210.

For example, when the diffusion container 210 has a trapezoidal cross-sectional shape perpendicular to the longitudinal direction, the first heating assembly 250 may be disposed on the bottom surface of the diffusion container 210 and the side surface of the diffusion container 210 perpendicular to the bottom surface, and may be The second heating assembly 260 is mounted on the remaining two surfaces.

Accordingly, the first heating assembly 250 can be coupled to or detached from the second heating assembly 260 along a direction in which the plurality of nozzles are coupled to the diffusion vessel 210.

The first heating assembly 250 and the second heating assembly 260 can be coupled to one another in accordance with various coupling schemes.

As an example, the first heating assembly 250 and the second heating assembly 260 can have stepped structures 246, 246a, and 246b formed in a boundary between the first cooling portion 244a and the second cooling portion 244b such that the first heating assembly 250 And the second heating assembly 260 is coupled to each other (although the present application is not limited thereto).

The stepped structures 246, 246a, and 246b of the first heating assembly 250 and the second heating assembly 260 may be formed to be coupled to each other or to each other in a direction in which the nozzle portion 220 and the diffusion container 210 are coupled to each other.

The deposition source 200 according to the present application includes a plurality of heating assemblies 250 and 260 that are coupled to each other or separated from each other in a direction in which the nozzle portion 220 and the diffusion container 210 are coupled to each other. Therefore, the heating assemblies 250 and 260 can be easily separated without interfering with other components, so that maintenance of the internal diffusion container 210 and the nozzle portion 220 can be easily performed.

In particular, when the substrate S is introduced into the processing chamber 100 in a vertical state, a gate for separating the deposition source 200 from the processing chamber 100 is also disposed on the side surface of the processing chamber 100. In this case, since the heating assemblies 250 and 260 of the deposition source 200 can be coupled or separated from each other in the direction in which the nozzle portion 220 and the diffusion container 210 are coupled to each other, there is an advantage that the deposition source 200 can be further improved. Assembly and work convenience.

Meanwhile, although FIG. 1 illustrates an embodiment in which the substrate S is vertically moved (ie, when the substrate S is horizontally moved in the upright state), for example, when the substrate S is moved such that the surface disposed in the upper portion of the processing chamber 100 is as When the face down shown in Fig. 2, the deposition source can still be installed in the lower portion of the processing chamber 100.

At this time, the nozzles in the nozzle portion 220 may be disposed to face the substrate S (ie, the deposition material is evaporated upward), and the deposition material supply portion 300 may be coupled to the opposite surface (lower surface) opposite to the surface to which the nozzle portion 220 is coupled ) to supply the deposition material to the diffusion vessel 210.

20‧‧‧ Carrier

22‧‧‧ Magnetic Reactive Components

24‧‧‧Support section

100‧‧‧Processing chamber

200‧‧‧Sedimentary source

210‧‧‧Diffusion container

220‧‧‧Nozzle section

230‧‧‧heater

230a‧‧‧First heater

230b‧‧‧second heater

240‧‧‧ heat shield

242‧‧‧ reflector

242a‧‧‧First reflector

242b‧‧‧second reflector

244‧‧‧cooling section

244a‧‧‧First cooling section

244b‧‧‧second cooling section

246‧‧‧ stepped structure

246a‧‧‧stepped structure

246b‧‧‧stepped structure

250‧‧‧First heating element

260‧‧‧second heating element

300‧‧‧Deposited material supply section

302‧‧‧Support members

410‧‧‧Linear moving guide

420‧‧‧Drive motor

430‧‧‧Magnetic part

The above and other aspects, features and advantages of the present application will become apparent from the <RTIgt;

1 is a vertical cross-sectional view of a deposition apparatus in accordance with an embodiment of the present application;

2 is a vertical cross-sectional view of a deposition apparatus in accordance with another embodiment of the present application;

Figure 3 is a vertical cross-sectional view of a deposition source of the deposition apparatus of Figure 1;

Figure 4 is a cross-sectional view taken along the I-I direction of the deposition source of the deposition apparatus of Figure 1;

FIG. 5 is a cross-sectional view showing a part of the configuration of the deposition source of FIG. 4.

Domestic deposit information (please note according to the order of the depository, date, number)

Foreign deposit information (please note in the order of country, organization, date, number)

Claims (12)

A deposition source disposed in a processing chamber for evaporating a deposition material to deposit the deposition material on a substrate, the deposition source comprising: a diffusion container having a predetermined length and Wherein a diffusion space is defined, in which the evaporated deposition material is diffused, at least one opening is formed in the diffusion container; and a nozzle portion coupled to the opening of the diffusion container and including along a plurality of nozzles disposed in a longitudinal direction of the diffusion container to spray the deposition material diffused in the diffusion container, wherein a surface of the diffusion container opposite to a portion coupled to the nozzle portion is assumed to be a bottom surface a center of the plurality of nozzles is spaced apart from a longitudinal centerline of the bottom surface of the diffusion container, and the plurality of nozzles are disposed to face the substrate. The deposition source of claim 1, further comprising: a deposition material supply portion configured to receive the deposition material and coupled to one side of the diffusion container to supply the deposition material to the Diffusion container. The deposition source according to claim 1, further comprising: a heating portion installed outside the diffusion container, wherein the heating portion includes a heater configured to heat the diffusion container and And a heat shield portion mounted around the heater to heat the deposited material contained in the diffusion container to prevent heat generated from the heater from diverging outward. The deposition source of claim 3, wherein the heating portion is configured with at least two heating assemblies that can be coupled or separated from each other in a direction in which the plurality of nozzles are coupled. The deposition source of claim 3, wherein the heat shielding portion comprises a reflector disposed outside the heater to reflect the heat diverging from the heater toward the diffusion container and disposed outside the reflector a cooling part. The deposition source of claim 1, wherein the diffusion container has any one of a rectangular shape and a trapezoidal cross-sectional shape perpendicular to a longitudinal direction of the diffusion container. The deposition source of claim 3, wherein the diffusion container has a trapezoidal cross-sectional shape perpendicular to the longitudinal direction of the diffusion container, the diffusion container having a side surface inclined with respect to a bottom surface of the diffusion container and The other side surface is perpendicular to the bottom surface. The deposition source of claim 7, wherein the heat shielding portion has a shape corresponding to the trapezoidal cross-sectional shape of the diffusion container. The deposition source of claim 7, wherein the heating portion comprises a first heating assembly mounted on the bottom surface and perpendicular to the other side of the bottom surface, and a first surface mounted on the remaining two surfaces The second heating assembly, and the first heating assembly, can be coupled to or detached from the second heating assembly along a direction in which the plurality of nozzles are coupled to the diffusion container. A deposition apparatus comprising: a processing chamber configured to provide a space for depositing a deposition material on a substrate; and a pair of deposition sources according to any one of claims 1 to 9. The pair of deposition sources are configured to evaporate the deposition material such that the deposition material is deposited onto the substrate, wherein the plurality of nozzles are between the centerlines of the pair of deposition sources. The deposition apparatus of claim 10, wherein the pair of deposition sources evaporate different deposition materials. The deposition apparatus of claim 10, wherein the deposition material evaporated by one of the pair of deposition sources is silver, and the deposition material evaporated by a remaining deposition source is magnesium.