TW201840870A - Cu-Ni-Si-based copper alloy strip and method for manufacturing same - Google Patents

Cu-Ni-Si-based copper alloy strip and method for manufacturing same Download PDF

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TW201840870A
TW201840870A TW107110739A TW107110739A TW201840870A TW 201840870 A TW201840870 A TW 201840870A TW 107110739 A TW107110739 A TW 107110739A TW 107110739 A TW107110739 A TW 107110739A TW 201840870 A TW201840870 A TW 201840870A
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copper alloy
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TWI647320B (en
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中妻宗彦
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日商Jx金屬股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026Alloys based on copper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0016Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working

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Abstract

The purpose of this invention is to provide a Cu-Ni-Si-based copper alloy strip and a method for manufacturing the same, the Cu-Ni-Si-based copper strip whereby the strength thereof is enhanced, the occurrence of smut is appropriately suppressed, and excellent adhesion to a resin is obtained. This Cu-Ni-Si-based copper alloy strip contains 1.5-4.5% by mass of Ni and 0.4-1.1% by mass of Si, the remainder comprising Cu and unavoidable impurities, wherein the electrical conductivity thereof is 30% IACS or greater, the tensile strength thereof is 800 MPa or greater, and the lightness L* thereof in the L*a*b* color space specified in JIS-Z8781:2013 after being immersed for 10 seconds in a 40 wt% nitric acid aqueous solution at room temperature is 50-75.

Description

Cu-Ni-Si系銅合金條及其製造方法  Cu-Ni-Si copper alloy strip and manufacturing method thereof  

本發明係關於一種可較佳地用於製造電子材料等電子零件之Cu-Ni-Si系銅合金條及其製造方法。 The present invention relates to a Cu-Ni-Si-based copper alloy strip which can be preferably used for producing electronic parts such as electronic materials and a method for producing the same.

近年來,隨著IC封裝之小型化,而要求引線框架、電子機器之各種端子、連接器等之小型化、甚至多接腳化。尤其是開發出稱為QFN(Quad Flat Non-Leaded package)之於LSI封裝之焊墊配置電極墊,且不使引線接腳露出之構造,進而要求多接腳化、窄間距化。為了將該等引線框架等進行多接腳化,而需要利用蝕刻之微細加工,因此要求一面提高成為材料之銅合金之強度,一面提高蝕刻性、鍍覆密接性、樹脂密接性等。根據此種情況,而開發出時效析出型之Cu-Ni-Si系銅合金。 In recent years, with the miniaturization of IC packages, miniaturization and even pinning of lead frames, various terminals of electronic devices, and the like have been demanded. In particular, a pad assembly electrode pad called an LSI package called QFN (Quad Flat Non-Leaded package) has been developed, and a structure in which the lead pins are not exposed is required, and a plurality of pins and a narrow pitch are required. In order to multiply the lead frames and the like, it is necessary to perform micro-machining by etching. Therefore, it is required to improve the etching property, the plating adhesion, the resin adhesion, and the like while improving the strength of the copper alloy to be a material. According to such a situation, an aging precipitation type Cu-Ni-Si-based copper alloy was developed.

然而,於將Cu-Ni-Si系銅合金用於引線框架等電子零件時,會實施酸洗作為預處理,但存在於酸洗時Ni-Si系化合物發生氧化而以污物(smut)形式殘留於材料表面之情況。若該污物之殘留物變多,則存在如下情況,即於IC封裝之組裝步驟中介存於引線框架與塑模樹脂之間而使樹脂密接性降低,或者使焊料或鍍覆之密接性降低。 However, when a Cu-Ni-Si-based copper alloy is used for an electronic component such as a lead frame, pickling is performed as a pretreatment, but in the case of pickling, the Ni-Si-based compound is oxidized to be in the form of a smut. Remaining on the surface of the material. When the amount of the residue of the dirt is increased, there is a case where the bonding between the lead frame and the mold resin is interposed between the assembly steps of the IC package, the resin adhesion is lowered, or the solder or plating adhesion is lowered. .

因此,揭示有以下技術,其係藉由限制Cu-Ni-Si系銅合金之Ni-Si系析出物之粒徑並限定Ni及Si之含量,而抑制酸洗時之污物殘存,藉此改善焊料密接性及鍍覆性(專利文獻1)。 Therefore, there is disclosed a technique for suppressing the residual of dirt during pickling by limiting the particle size of the Ni-Si-based precipitate of the Cu-Ni-Si-based copper alloy and limiting the contents of Ni and Si. Improved solder adhesion and plating properties (Patent Document 1).

先前技術文獻 Prior technical literature

專利文獻 Patent literature

專利文獻1:日本特開平8-319527號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. Hei 8-319527

然而,於專利文獻1所記載之技術之情形時,為了改善焊料密接性及鍍覆性,而欲於酸洗中基本上完全地去除NiSi粒之污物。因此,存在如下問題:於酸洗後露出之材料表面基本上不會產生由析出物所形成之凹凸,而由凹凸帶來之投錨效應降低,從而與樹脂之密接性變差。因此,例如會對上述IC封裝之組裝步驟中之引線框架與塑模樹脂之密接性造成影響。 However, in the case of the technique described in Patent Document 1, in order to improve the solder adhesion and the plating property, it is desired to substantially completely remove the dirt of the NiSi particles in the pickling. Therefore, there is a problem that the surface of the material exposed after pickling does not substantially generate irregularities formed by the precipitates, and the anchoring effect by the unevenness is lowered, so that the adhesion to the resin is deteriorated. Therefore, for example, the adhesion between the lead frame and the mold resin in the assembly step of the above IC package is affected.

即,本發明係為了解決上述課題而完成者,且目的在於提供一種一面提高強度,一面適度地抑制污物之產生而與樹脂之密接性優異之Cu-Ni-Si系銅合金條及其製造方法。 In other words, the present invention has been made to solve the above problems, and an object of the present invention is to provide a Cu-Ni-Si-based copper alloy strip which is excellent in adhesion to a resin while suppressing the generation of contaminants while improving the strength, and the production thereof. method.

本發明者等人經過各種研究,結果發現,於Cu-Ni-Si系銅合金條之酸洗時污物過度地產生直至成為層狀之狀態會使樹脂密接性降低,但過度地去除污物亦會使由NiSi析出物所形成之凹凸消失,而由凹凸帶來之投錨效應降低,從而與樹脂之密接性降低。換言之,本發明者等人發現,藉由於酸洗時使污物適度地殘留,而表面凹凸殘留,與樹脂之密接性提高。又,作為如上述般抑制污物之產生之方法,發現對製造銅合金條時之固溶處理條件進行調整之方式。 As a result of various studies, the present inventors have found that when the Cu-Ni-Si-based copper alloy strip is pickled, the dirt is excessively generated until the layered state causes the resin adhesion to be lowered, but the dirt is excessively removed. Further, the unevenness formed by the NiSi precipitates disappears, and the anchoring effect by the unevenness is lowered, so that the adhesion to the resin is lowered. In other words, the inventors of the present invention have found that the surface of the surface remains uneven due to the fact that the stain remains moderately during pickling, and the adhesion to the resin is improved. Moreover, as a method of suppressing the generation of contaminants as described above, a method of adjusting the solution treatment conditions at the time of producing a copper alloy strip was found.

即,本發明之Cu-Ni-Si系銅合金條係含有Ni:1.5~4.5質量%、Si:0.4~1.1質量%,且剩餘部分由Cu及不可避免雜質所構成者,其導電率為30%IACS以上,拉伸強度為800MPa以上,於室溫下浸漬於40wt%硝酸水溶液 中10秒後,JIS-Z8781:2013所規定之L*a*b*表色系統中之亮度L*為50~75。 That is, the Cu-Ni-Si-based copper alloy strip of the present invention contains Ni: 1.5 to 4.5% by mass, Si: 0.4 to 1.1% by mass, and the remainder is composed of Cu and unavoidable impurities, and its conductivity is 30. Above 100% IACS, the tensile strength is 800 MPa or more, and after immersing in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, the brightness L* in the L*a*b* color system specified in JIS-Z8781:2013 is 50. ~75.

較佳為進而含有合計0.005~0.8質量%之選自Mg、Fe、P、Mn、Co及Cr之群中之一種以上。 It is preferable to further contain one or more selected from the group consisting of Mg, Fe, P, Mn, Co, and Cr in a total amount of 0.005 to 0.8% by mass.

本發明之Cu-Ni-Si系銅合金條之製造方法係對於含有Ni:1.5~4.5質量%、Si:0.4~1.1質量%且剩餘部分由Cu及不可避免雜質所構成之Cu-Ni-Si系銅合金條之錠進行熱軋、冷軋後,依序進行固溶處理、時效處理,進而以加工度40%以上進行時效處理後冷軋,且以如下方式對上述固溶處理進行調整,即,將上述固溶處理後且上述時效處理前之材料於室溫下浸漬於40wt%硝酸水溶液中10秒後,對JIS-Z8781:2013所規定之L*a*b*表色系統中之亮度L*進行測定時該亮度L*成為40~70。 The method for producing a Cu-Ni-Si-based copper alloy strip according to the present invention is Cu-Ni-Si containing Ni: 1.5 to 4.5% by mass, Si: 0.4 to 1.1% by mass, and the balance being Cu and inevitable impurities. After the hot-rolling and cold-rolling of the ingots of the copper alloy strips, the solution treatment is followed by the aging treatment, and the aging treatment is performed at a degree of work of 40% or more, followed by cold rolling, and the solution treatment is adjusted as follows. That is, after the solution treatment and the material before the aging treatment are immersed in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, it is in the L*a*b* color system defined in JIS-Z8781:2013. When the brightness L* is measured, the brightness L* is 40 to 70.

根據本發明,而獲得一種強度較高,且適度地抑制污物之產生而與樹脂之密接性優異之Cu-Ni-Si系銅合金條。 According to the present invention, a Cu-Ni-Si-based copper alloy strip having high strength and moderately suppressing generation of contaminants and having excellent adhesion to a resin is obtained.

以下,對本發明之實施形態之Cu-Ni-Si系銅合金條進行說明。再者,於本發明中所謂%,只要無特別說明,則設為表示質量%。 Hereinafter, a Cu-Ni-Si-based copper alloy strip according to an embodiment of the present invention will be described. In addition, in the present invention, the % is referred to as % by mass unless otherwise specified.

首先,對銅合金條之組成之限定原因進行說明。 First, the reasons for limiting the composition of the copper alloy strip will be described.

<Ni及Si> <Ni and Si>

Ni及Si係藉由進行時效處理而Ni與Si形成微細之以Ni2Si為主之金屬間化合物之析出粒子,而顯著地增加合金強度。又,隨著時效處理中之Ni2Si之析出, 而導電性提高。但,於Ni濃度未達1.5%之情形,或Si濃度未達0.4%之情形時,即便添加其他成分亦無法獲得所需之強度。又,於Ni濃度超過4.5%之情形,或Si濃度超過1.1%之情形時,雖然可獲得充分之強度,但導電性變低,進而於母相中生成無助於強度提高之粗大之Ni-Si系粒子(結晶物及析出物),而導致彎曲加工性、蝕刻性及鍍覆性之降低。因此,將Ni之含量設為1.5~4.5%,將Si之含量設為0.4~1.1%。較佳為將Ni之含量設為1.6~3.0%,將Si之含量設為0.4~0.7%。 In the Ni and Si systems, Ni and Si form fine precipitated particles of an intermetallic compound mainly composed of Ni 2 Si by aging treatment, and the alloy strength is remarkably increased. Further, as Ni 2 Si is precipitated in the aging treatment, the conductivity is improved. However, in the case where the Ni concentration is less than 1.5%, or when the Si concentration is less than 0.4%, the required strength cannot be obtained even if other components are added. Further, in the case where the Ni concentration exceeds 4.5% or the Si concentration exceeds 1.1%, although sufficient strength can be obtained, the conductivity is lowered, and further, a coarse Ni- which does not contribute to strength improvement is formed in the parent phase. Si-based particles (crystals and precipitates) cause deterioration in bending workability, etching properties, and plating properties. Therefore, the content of Ni is set to 1.5 to 4.5%, and the content of Si is set to 0.4 to 1.1%. It is preferable to set the content of Ni to 1.6 to 3.0% and the content of Si to 0.4 to 0.7%.

<其他元素> <other elements>

進而,於上述合金中,可以改善合金之強度、耐熱性、耐應力緩和性等為目的而進而含有合計0.005~0.8質量%之選自Mg、Fe、P、Mn、Co及Cr之群中之一種以上。若該等元素之合計量未達0.005質量%,則不產生上述效果,若超過0.8質量%,則雖然可獲得所需之特性,但存在導電性或彎曲加工性降低之情況。 Further, in the alloy, it is possible to further improve the strength, heat resistance, stress relaxation resistance, and the like of the alloy, and further comprise a total of 0.005 to 0.8% by mass of a group selected from the group consisting of Mg, Fe, P, Mn, Co, and Cr. More than one. When the total amount of the elements is less than 0.005% by mass, the above effect is not obtained. When the amount exceeds 0.8% by mass, the desired properties are obtained, but the conductivity or the bending workability may be lowered.

<導電率與拉伸強度TS> <Electrical conductivity and tensile strength TS>

本發明之實施形態之Cu-Ni-Si系銅合金條係導電率為30%IACS以上,拉伸強度TS為800MPa以上。 The Cu-Ni-Si-based copper alloy strip according to the embodiment of the present invention has a conductivity of 30% IACS or more and a tensile strength TS of 800 MPa or more.

隨著半導體元件之作動頻率之增大,由通電引起之發熱增大,因此將銅合金條之導電率設為30%IACS以上。 As the operating frequency of the semiconductor element increases, the heat generation due to energization increases, so the conductivity of the copper alloy strip is set to 30% IACS or more.

又,為了防止進行打線接合時之引線框架之變形等以維持形狀,而將拉伸強度TS設為800MPa以上。 Moreover, the tensile strength TS is set to 800 MPa or more in order to prevent deformation of the lead frame at the time of wire bonding and the like to maintain the shape.

<亮度L*> <Brightness L*>

本發明之實施形態之Cu-Ni-Si系銅合金條係於室溫下浸漬於40wt%硝酸水溶液中10秒後,JIS-Z8781:2013所規定之L*a*b*表色系統中之亮度L*為50~75。 The Cu-Ni-Si-based copper alloy strip according to the embodiment of the present invention is immersed in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, and is then in the L*a*b* color system specified in JIS-Z8781:2013. The brightness L* is 50~75.

若使試樣浸漬於硝酸水溶液中,則於試樣表面污物產生並殘留,從而試樣表面之顏色變暗。因此,藉由測定試樣表面之色調,可判定污物有無產生。 When the sample is immersed in an aqueous solution of nitric acid, dirt is generated on the surface of the sample and remains, and the color of the surface of the sample is darkened. Therefore, by measuring the color tone of the surface of the sample, it is possible to determine whether or not the stain is generated.

若亮度L*接近0則變黑,若接近100則變白。 If the brightness L* is close to 0, it turns black, and if it is close to 100, it turns white.

藉由將本發明之實施形態之Cu-Ni-Si系銅合金條之浸漬於硝酸水溶液中後之亮度L*設為50~75,可於酸洗後之材料表面獲得適度地殘留有NiSi析出物之凹凸狀表面,藉由投錨效應而與樹脂之密接性變得良好。 By immersing the Cu-Ni-Si-based copper alloy strip of the embodiment of the present invention in a nitric acid aqueous solution, the brightness L* is 50 to 75, and it is possible to obtain a moderate residual NiSi precipitation on the surface of the material after pickling. The uneven surface of the object has good adhesion to the resin by the anchoring effect.

另一方面,若亮度L*未達50,則於酸洗後污物大量地產生並層狀地覆蓋材料表面,因污物層與銅合金層之剝離而樹脂密接性降低。亮度L*超過75者係於酸洗中污垢被過度去除,表面之NiSi析出物變小而表面凹凸變小。其結果為,變得無法獲得投錨效應,或材料表面之銅合金(基材)之表面積變大,藉此促進Cu之氧化膜生長,該氧化膜發生剝離而與樹脂之密接性降低。 On the other hand, when the brightness L* is less than 50, the stain is largely generated after the pickling, and the surface of the material is covered in a layered manner, and the resin adhesion is lowered due to the peeling of the dirt layer and the copper alloy layer. When the brightness L* exceeds 75, the dirt is excessively removed during pickling, and the NiSi precipitate on the surface becomes small and the surface unevenness becomes small. As a result, the anchoring effect is not obtained, or the surface area of the copper alloy (substrate) on the surface of the material is increased, whereby the growth of the oxide film of Cu is promoted, and the oxide film is peeled off and the adhesion to the resin is lowered.

作為將銅合金條之亮度L*控制為50~75之方法,可列舉對下述固溶處理條件進行調整之方式。關於固溶處理條件,將於下文敘述。 As a method of controlling the brightness L* of the copper alloy strip to 50 to 75, a method of adjusting the following solution treatment conditions can be mentioned. The solution treatment conditions will be described below.

<Cu-Ni-Si系銅合金條之製造> <Manufacture of Cu-Ni-Si copper alloy strip>

本發明之實施形態之Cu-Ni-Si系銅合金條通常可對錠依序進行熱軋、冷軋、固溶處理、時效處理、時效後冷軋、弛力退火而製造。固溶處理前之冷軋並非必需,亦可視需要實施。又,亦可視需要於固溶處理後且時效處理前實施冷軋。於上述各步驟之期間,可適當進行用以去除表面之氧化皮之研削、研磨、噴丸、酸洗等。 The Cu-Ni-Si-based copper alloy strip according to the embodiment of the present invention can be produced by sequentially performing hot rolling, cold rolling, solution treatment, aging treatment, post-aging cold rolling, and relaxation annealing on the ingot. Cold rolling before solution treatment is not necessary and can be carried out as needed. Further, cold rolling may be performed after the solution treatment and before the aging treatment as needed. During the above steps, grinding, polishing, shot blasting, pickling, and the like for removing scale on the surface can be suitably performed.

固溶處理係使Ni-Si系化合物等矽化物固溶於Cu母質中,同時使Cu母質再結晶之熱處理。 The solution treatment is a heat treatment in which a telluride such as a Ni-Si compound is dissolved in a Cu parent material and a Cu parent material is recrystallized.

於本發明之實施形態之Cu-Ni-Si系銅合金條之製造方法中,以如下方式對固溶處理條件進行調整,即,將固溶處理後且時效處理前之材料於室溫下浸漬於40wt%硝酸水溶液中10秒後,對JIS-Z8781:2013所規定之L*a*b*表色系統中 之亮度L*進行測定時該亮度L*成為40~70。 In the method for producing a Cu-Ni-Si-based copper alloy strip according to the embodiment of the present invention, the solution treatment conditions are adjusted in such a manner that the material before the solution treatment and before the aging treatment is immersed at room temperature. After 10 seconds in a 40 wt% aqueous solution of nitric acid, the luminance L* in the L*a*b* color system specified in JIS-Z8781:2013 was 40 to 70.

藉由如上述般調整固溶處理條件,而使成為污物之原因之Ni及Si適度地固溶於Cu中,而恰好地控制NiSi析出物之量,其結果為,可將所獲得之Cu-Ni-Si系銅合金條之亮度L*控制為50~75。 By adjusting the solution treatment conditions as described above, Ni and Si, which are causes of the dirt, are moderately dissolved in Cu, and the amount of NiSi precipitates is precisely controlled. As a result, the obtained Cu can be obtained. The brightness of the Ni-Si copper alloy strip is controlled to be 50 to 75.

固溶處理後之材料之亮度L*未達40者係固溶處理不充分,而成為污物之NiSi析出物之量變得過多。 When the brightness L* of the material after the solution treatment is less than 40, the solution treatment is insufficient, and the amount of NiSi precipitates which become dirt is excessive.

固溶處理後之材料之亮度L*超過70者係固溶處理過度,而成為污物之NiSi析出物之量變得過少。 When the brightness L* of the material after the solution treatment exceeds 70, the solution treatment is excessive, and the amount of NiSi precipitates which become dirt is too small.

再者,為了改變固溶處理條件,只要控制固溶處理之溫度與時間即可,但未規定具體之固溶處理之溫度與時間之原因在於:根據銅合金條中之Ni、Si等之添加量、或固溶處理之上一步驟之條件,而固溶處理前之Ni-Si系化合物之量或粒徑有所不同。 Further, in order to change the solution treatment conditions, it is only necessary to control the temperature and time of the solution treatment, but the temperature and time of the specific solution treatment are not specified because the addition of Ni, Si, etc. in the copper alloy strip is added. The amount of the Ni-Si compound before the solution treatment or the particle size differs depending on the amount of the step or the solution treatment.

<時效處理> <Aging treatment>

時效處理係使固溶處理中所固溶之矽化物以主要為Ni2Si之金屬間化合物之微細粒子的形式析出。因該時效處理而強度與導電率提昇。時效處理例如可於375~625℃、1~50小時之條件下進行,藉此可提高強度。 The aging treatment is such that the solid solution dissolved in the solution treatment is precipitated as fine particles of an intermetallic compound mainly composed of Ni 2 Si. The strength and electrical conductivity increase due to the aging treatment. The aging treatment can be carried out, for example, at 375 to 625 ° C for 1 to 50 hours, whereby the strength can be improved.

於時效時間未達1小時之情形時,存在Ni-Si系析出物之析出量較少,而強度不充分之情況。又,於時效溫度超過625℃或時效時間超過50小時之情形時,存在引起析出物之粗大化或再固溶而污物產生量增加,或強度變得不充分,或導電率變低之情況。 When the aging time is less than one hour, there is a case where the precipitation amount of the Ni-Si-based precipitate is small and the strength is insufficient. In addition, when the aging temperature exceeds 625 ° C or the aging time exceeds 50 hours, there is a case where the precipitate is coarsened or re-solidified, the amount of generated dirt is increased, the strength is insufficient, or the conductivity is lowered. .

<冷軋> <cold rolling>

其次,於時效處理後以加工度40%以上進行冷軋(時效處理後冷軋)。 Next, after the aging treatment, cold rolling is performed at a working degree of 40% or more (cold rolling after aging treatment).

若進行加工度40%以上之冷軋,則藉由加工硬化而拉伸強度成為800MPa以上。 When the cold rolling is performed at a degree of work of 40% or more, the tensile strength is 800 MPa or more by work hardening.

若加工度未達40%,則存在強度不充分之情況。 If the degree of processing is less than 40%, there is a case where the strength is insufficient.

若以加工度40~90%以上進行時效處理後冷軋,則更佳。若加工度超過90%,則存在由加工應變引起之導電率降低變得明顯,即便進行弛力退火,導電率亦較低之情況。 It is more preferable to carry out cold rolling after aging treatment with a working degree of 40 to 90% or more. When the degree of work exceeds 90%, the decrease in electrical conductivity due to the processing strain becomes remarkable, and even if the relaxation annealing is performed, the electrical conductivity is low.

時效處理後冷軋之加工度係時效處理後冷軋之後之厚度相對於即將時效處理後冷軋之前之材料厚度的變化率。 The degree of cold rolling after aging treatment is the rate of change of the thickness after cold rolling after aging treatment with respect to the thickness of the material before cold rolling after aging treatment.

本發明之Cu-Ni-Si系銅合金條之厚度並無特別限定,例如可設為0.03~0.6mm。 The thickness of the Cu-Ni-Si-based copper alloy strip of the present invention is not particularly limited, and may be, for example, 0.03 to 0.6 mm.

<弛力退火> <Swelling Annealing>

可於時效處理後冷軋之後進行弛力退火。弛力退火只要於一般條件下進行即可,例如可於300℃~550℃、保持時間為5秒至300秒之條件下進行。藉此,可去除材料內之殘留應力。 The relaxation annealing can be performed after cold rolling after the aging treatment. The relaxation annealing may be carried out under ordinary conditions, for example, at 300 ° C to 550 ° C and a holding time of 5 seconds to 300 seconds. Thereby, the residual stress in the material can be removed.

實施例1 Example 1

以下述方式各實施例及各比較例之試樣。 Samples of the respective examples and comparative examples were as follows.

將電解銅作為原料,使用大氣熔解爐使表1、表2所示之組成之銅合金熔化,鑄造成厚度20mm×寬度60mm之錠。將該錠於950℃進行熱軋直至板厚10mm。於熱軋後依序進行研削、冷軋。 The electrolytic copper was used as a raw material, and the copper alloy having the composition shown in Tables 1 and 2 was melted by an atmospheric melting furnace, and cast into an ingot having a thickness of 20 mm and a width of 60 mm. The ingot was hot rolled at 950 ° C until the sheet thickness was 10 mm. After hot rolling, grinding and cold rolling are carried out in sequence.

其次,於表1、表2所示之條件下依序進行固溶處理及時效處理。其後,以表1、表2所示之加工度進行時效處理後冷軋直至板厚0.150mm,於450℃進行30秒弛力退火而獲得試樣。 Next, the solution treatment and the aging treatment are sequentially performed under the conditions shown in Tables 1 and 2. Thereafter, aging treatment was carried out in accordance with the processing degrees shown in Tables 1 and 2, followed by cold rolling until the sheet thickness was 0.150 mm, and annealing was performed at 450 ° C for 30 seconds to obtain a sample.

<導電率(%IACS)> <Electrical conductivity (%IACS)>

對於所獲得之試樣,基於JIS H0505並藉由四端子法而測定25℃之導電率(%IACS)。 For the obtained sample, the conductivity (% IACS) at 25 ° C was measured by a four-terminal method based on JIS H0505.

<拉伸強度(TS)> <tensile strength (TS)>

對於所獲得之試樣,藉由拉伸試驗機並依據JIS-Z2241而分別測定與壓延方向平行之方向上之拉伸強度(TS)。首先,自各試樣以拉伸方向成為壓延方向之方式使用壓製機而製作JIS13B號試片。拉伸試驗之條件係設為試片寬度12.7mm、室溫(15~35℃)、拉伸速度5mm/min、隔距長度50mm。 With respect to the obtained sample, the tensile strength (TS) in the direction parallel to the rolling direction was measured by a tensile tester in accordance with JIS-Z2241. First, a JIS 13B test piece was produced from each sample so that the stretching direction became the rolling direction. The conditions of the tensile test were set to a test piece width of 12.7 mm, room temperature (15 to 35 ° C), a tensile speed of 5 mm/min, and a gauge length of 50 mm.

<亮度L*> <Brightness L*>

將固溶處理後且上述時效處理前之試樣、及弛力退火後之試樣之單面於室溫下浸漬於40wt%硝酸水溶液中10秒後,用流水沖洗。對於處理後之試樣表面,使用色差計求出亮度L*。 After the solution treatment, the sample before the aging treatment and the single surface of the sample after the relaxation annealing were immersed in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, and then rinsed with running water. For the surface of the sample after the treatment, the luminance L* was obtained using a color difference meter.

色差計係使用柯尼卡美能達製造之CR-200而進行測定。 The color difference meter was measured using a CR-200 manufactured by Konica Minolta.

<與樹脂之密接性> <Adhesion to resin>

將弛力退火後之試樣切成壓延平行方向之長度100mm且寬度20mm後,將試樣之單面於室溫下浸漬於40wt%硝酸水溶液中10秒後,用流水沖洗。其次,於240℃對該試樣實施5分鐘之大氣加熱。於大氣加熱後,於上述單面之長度60mm之範圍貼附耐酸膠帶後進行剝離,藉由圖像處理而求出對於耐酸膠帶之黏著面之附著物之有無。具體而言,將耐酸膠帶之黏著面之圖像進行二值化,算出成為附著物之黑色圖像區域之總面積相對於耐酸膠帶之黏著面之面積的比,並根據以下基準而評價。若評價為○,則與樹脂之密接性優異。 After the sample subjected to the relaxation annealing was cut into a length of 100 mm in the parallel direction and a width of 20 mm, the single side of the sample was immersed in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, and then rinsed with running water. Next, the sample was subjected to atmospheric heating at 240 ° C for 5 minutes. After heating in the air, the acid-resistant tape was attached to the surface of the one-side length of 60 mm, and then peeled off, and the presence or absence of the adhering substance to the adhesive surface of the acid-resistant tape was determined by image processing. Specifically, the image of the adhesive surface of the acid-resistant tape was binarized, and the ratio of the total area of the black image area to be attached to the area of the adhesive surface of the acid-resistant tape was calculated and evaluated based on the following criteria. When the evaluation is ○, the adhesion to the resin is excellent.

○:附著物之總面積為膠帶黏著面之面積之10%以下 ○: The total area of the attached matter is less than 10% of the area of the adhesive surface of the tape

×:附著物之總面積超過膠帶黏著面之面積之10% ×: The total area of the attached matter exceeds 10% of the area of the adhesive surface of the tape

將所獲得之結果示於表1。 The results obtained are shown in Table 1.

自表1可知,於亮度L*為50~75之各實施例之情形時,強度較高,並且與樹脂之密接性優異。 As is apparent from Table 1, in the case of each of the examples in which the luminance L* was 50 to 75, the strength was high and the adhesion to the resin was excellent.

另一方面,於亮度L*超過75之比較例1之情形時,與樹脂之密接性差。認為其原因在於:材料表面之NiSi析出物過少,表面之Cu氧化明顯,表面氧化膜發生剝離,而降低與樹脂之密接性。 On the other hand, in the case of Comparative Example 1 in which the luminance L* exceeded 75, the adhesion to the resin was inferior. The reason is considered to be that the NiSi precipitate on the surface of the material is too small, the Cu on the surface is significantly oxidized, and the surface oxide film is peeled off, and the adhesion to the resin is lowered.

於亮度L*未達50之比較例2之情形時,污物產生量變多,而與樹脂之密接性較差。 In the case of Comparative Example 2 in which the luminance L* was less than 50, the amount of generated dirt was increased, and the adhesion to the resin was inferior.

於時效處理後冷軋之加工度超過90%之比較例3之情形時,導電率未達30%IACS。 In the case of Comparative Example 3 in which the degree of processing of cold rolling after aging treatment exceeded 90%, the electrical conductivity was less than 30% IACS.

於時效處理後冷軋之加工度未達40%之比較例4之情形時,拉伸強度未達800MPa。 In the case of Comparative Example 4 in which the degree of cold rolling after the aging treatment was less than 40%, the tensile strength was less than 800 MPa.

於Ni及Si之含量超過規定範圍之比較例5之情形時,導電率未達30%IACS。 In the case of Comparative Example 5 in which the content of Ni and Si exceeded a predetermined range, the electrical conductivity was less than 30% IACS.

於含有合計超過0.8質量%之選自Mg、Fe、P、Mn、Co及Cr之群中之一種以上之比較例7之情形時,亦導電率未達30%IACS。 In the case of Comparative Example 7 containing one or more of a group selected from the group consisting of Mg, Fe, P, Mn, Co, and Cr in a total amount of more than 0.8% by mass, the electrical conductivity was also less than 30% IACS.

於時效溫度未達625℃之比較例8、及時效時間未達1小時之比較例10之情形時,成為亞時效,而拉伸強度未達800MPa。 In the case of Comparative Example 8 in which the aging temperature was less than 625 ° C and the comparative example 10 in which the aging time was less than 1 hour, it became sub-aging and the tensile strength was less than 800 MPa.

於時效溫度超過625℃之比較例9、及時效時間超過50小時之比較例11之情形時,成為過時效,而拉伸強度未達800MPa。又,因過時效而導致Ni-Si系析出物顯著地析出,亮度L*變得未達50,而污物產生量變多,與樹脂之密接性較差。 In Comparative Example 9 in which the aging temperature exceeded 625 ° C and Comparative Example 11 in which the aging time exceeded 50 hours, it became overaged, and the tensile strength was less than 800 MPa. Further, the Ni-Si-based precipitates are remarkably precipitated due to overaging, and the luminance L* is less than 50, and the amount of generated contaminants is increased, and the adhesion to the resin is inferior.

Claims (3)

一種Cu-Ni-Si系銅合金條,其係含有Ni:1.5~4.5質量%、Si:0.4~1.1質量%,且剩餘部分由Cu及不可避免雜質所構成者,其導電率為30%IACS以上,拉伸強度為800MPa以上,於室溫下浸漬於40wt%硝酸水溶液中10秒後,JIS-Z8781:2013所規定之L*a*b*表色系統中之亮度L*為50~75。  A Cu-Ni-Si copper alloy strip containing Ni: 1.5 to 4.5% by mass, Si: 0.4 to 1.1% by mass, and the remainder consisting of Cu and unavoidable impurities, and its conductivity is 30% IACS The tensile strength is 800 MPa or more, and after immersing in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, the brightness L* in the L*a*b* color system specified in JIS-Z8781:2013 is 50-75. .   如請求項1所述之Cu-Ni-Si系銅合金條,其進而含有合計0.005~0.8質量%之選自Mg、Fe、P、Mn、Co及Cr之群中之一種以上。  The Cu-Ni-Si-based copper alloy strip according to claim 1 further contains at least one selected from the group consisting of Mg, Fe, P, Mn, Co, and Cr in a total amount of 0.005 to 0.8% by mass.   一種Cu-Ni-Si系銅合金條之製造方法,其係對於含有Ni:1.5~4.5質量%、Si:0.4~1.1質量%且剩餘部分由Cu及不可避免雜質所構成之Cu-Ni-Si系銅合金條之錠進行熱軋、冷軋後,依序進行固溶處理、時效處理,進而以加工度40%以上進行時效處理後冷軋,且以如下方式對上述固溶處理進行調整,即,將上述固溶處理後且上述時效處理前之材料於室溫下浸漬於40wt%硝酸水溶液中10秒後,對JIS-Z8781:2013所規定之L*a*b*表色系統中之亮度L*進行測定時該亮度L*成為40~70。  A method for producing a Cu-Ni-Si-based copper alloy strip, which is Cu-Ni-Si containing Ni: 1.5 to 4.5% by mass, Si: 0.4 to 1.1% by mass, and the balance being Cu and inevitable impurities After the hot-rolling and cold-rolling of the ingots of the copper alloy strips, the solution treatment is followed by the aging treatment, and the aging treatment is performed at a degree of work of 40% or more, followed by cold rolling, and the solution treatment is adjusted as follows. That is, after the solution treatment and the material before the aging treatment are immersed in a 40 wt% aqueous solution of nitric acid at room temperature for 10 seconds, it is in the L*a*b* color system defined in JIS-Z8781:2013. When the brightness L* is measured, the brightness L* is 40 to 70.  
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