TW201830478A - Pattern forming method - Google Patents

Pattern forming method Download PDF

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TW201830478A
TW201830478A TW107112957A TW107112957A TW201830478A TW 201830478 A TW201830478 A TW 201830478A TW 107112957 A TW107112957 A TW 107112957A TW 107112957 A TW107112957 A TW 107112957A TW 201830478 A TW201830478 A TW 201830478A
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substrate
processing chamber
processing
exposure
heating
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TW107112957A
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TWI662592B (en
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鈴木智也
西川仁
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日商尼康股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Materials For Photolithography (AREA)
  • Optical Filters (AREA)
  • Advancing Webs (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Coating Apparatus (AREA)

Abstract

A substrate processing apparatus includes: a plurality of processing portions which respectively perform a processing to a band-like shape substrate; a first processing chamber that accommodates a first processing portion which can execute a common sub-process in the plurality of the processing portions; a second processing chamber that accommodates a second processing portion out of the plurality of the processing portions; a feed portion that feeds the substrate to each of the first processing chamber and the second processing chamber.

Description

圖案形成方法    Pattern forming method   

本發明係關於基板處理裝置。 The present invention relates to a substrate processing apparatus.

本申請係根據2011年4月25日申請之日本特願2011-097122號主張優先權,並將其內容援引於此。 This application claims priority based on Japanese Patent Application No. 2011-097122 for which it applied on April 25, 2011, and uses the content here.

作為構成顯示器裝置等顯示裝置之顯示元件,例如有液晶顯示元件、有機電致發光(有機EL)元件等。目前,此等顯示元件係以對應各畫素在基板表面形成被稱為薄膜電晶體(Thin Film Transistor:TFT)之主動元件(Active device)漸為主流。 As a display element which comprises a display device, such as a display device, a liquid crystal display element, an organic electroluminescence (organic EL) element, etc. are mentioned, for example. At present, these display elements are gradually forming an active device (Thin Film Transistor: TFT) called a thin film transistor (TFT) on the substrate surface corresponding to each pixel.

近年來,提出了一種在片狀之基板(例如薄膜構件等)上形成顯示元件之技術。作為此種技術,例如有一種被稱為捲軸對捲軸(roll to roll)方式(以下,簡記為「捲軸方式」)之手法廣為人知(例如,參照專利文獻1)。捲軸方式,係將捲繞在基板供應側之供應用滾筒之1片片狀基板(例如,帶狀之薄膜構件)送出且一邊將送出之基板以基板回收側之回收用滾筒加以捲取,一邊藉由設置於供應用滾筒與回收用滾筒間之處理部(單元)對基板施以所欲加工者。 In recent years, a technique for forming a display element on a sheet-like substrate (for example, a thin-film member) has been proposed. As such a technique, for example, a technique called a roll to roll method (hereinafter, simply referred to as a “roll method”) is widely known (for example, refer to Patent Document 1). In the reel method, one sheet-like substrate (for example, a film-like film member) wound around a supply roller on the substrate supply side is sent out, and while the sent-out substrate is taken up by a recovery roller on the substrate recovery side, The substrate is processed by a processing unit (unit) provided between the supply roller and the recovery roller.

又,在基板送出至被捲取為止之期間,例如一邊使用複數個搬送滾筒等搬送基板、一邊使用複數個處理部來形成構成TFT之閘極電極、閘極絕緣膜、半導體膜、源極-汲極電極等,在基板之被處理面上依序形成顯示元件之構成要件。 In addition, during the period from when the substrate is sent out to being taken up, for example, while the substrate is being transferred using a plurality of transfer rollers, the gate electrode, the gate insulating film, the semiconductor film, and the source electrode constituting the TFT are formed using a plurality of processing units. The drain electrode and the like form the constituent elements of the display element in order on the processed surface of the substrate.

專利文獻1:國際公開第2006/100868號小冊子 Patent Document 1: International Publication No. 2006/100868

然而,上述步驟,有可能需要全長數百公尺之長搬送路徑,而例如被要求在工廠等之有限空間內有效率地配置各處理部。 However, the above steps may require a long conveying path with a length of several hundred meters, and for example, it is required to efficiently arrange each processing unit in a limited space such as a factory.

本發明之態樣,其目的在於提供能有效率地配置處理部之基板處理裝置。 An aspect of the present invention is to provide a substrate processing apparatus capable of efficiently disposing a processing unit.

依據本發明之態樣,提供一種基板處理裝置,其具備:複數個處理部,對形成為帶狀之基板分別進行處理;第一處理室,收容複數個處理部中能執行共通次程序之第一處理部;第二處理室,係收容複數個處理部中之第二處理部;以及搬送部,將基板分別搬送至第一處理室及第二處理室。 According to an aspect of the present invention, a substrate processing apparatus is provided, which includes: a plurality of processing sections, each of which processes a substrate formed into a band shape; a first processing chamber, which houses a plurality of processing sections capable of executing a common procedure; A processing unit; a second processing chamber that houses the second processing unit of the plurality of processing units; and a transfer unit that transfers the substrate to the first processing chamber and the second processing chamber, respectively.

根據本發明之態樣,能有效率地利用處理部之空間。 According to the aspect of the present invention, the space of the processing section can be efficiently used.

3‧‧‧基板處理部(處理部) 3‧‧‧ Substrate Processing Department (Processing Department)

10‧‧‧處理裝置 10‧‧‧Processing device

11~13‧‧‧處理室(第一處理室、第二處理室、第三處理室) 11 ~ 13‧‧‧processing room (first processing room, second processing room, third processing room)

15~19‧‧‧連接部 15 ~ 19‧‧‧ Connection

20‧‧‧搬送裝置(搬送部) 20‧‧‧ transporting device (transportation department)

41‧‧‧塗布裝置 41‧‧‧coating device

42‧‧‧顯影裝置 42‧‧‧Developing device

43‧‧‧洗淨裝置 43‧‧‧washing device

44‧‧‧鍍敷裝置 44‧‧‧Plating equipment

45‧‧‧廢液回收部(回收管、回收部) 45‧‧‧ Waste liquid recovery department (recovery pipe, recovery department)

51~53‧‧‧加熱裝置 51 ~ 53‧‧‧Heating device

60‧‧‧筐體 60‧‧‧Cage

61‧‧‧基板搬入口(搬入口) 61‧‧‧ substrate moving entrance (removing entrance)

62‧‧‧基板收容室(收容室) 62‧‧‧ substrate storage room (storage room)

63‧‧‧基板搬出口(搬出口) 63‧‧‧ Substrate Removal Exit (Removal Exit)

70‧‧‧加熱部 70‧‧‧Heating section

84‧‧‧異物移動抑制裝置 84‧‧‧ Foreign body movement suppression device

85‧‧‧流體移動限制裝置 85‧‧‧ fluid movement restriction device

86‧‧‧調溫裝置(基板調溫部) 86‧‧‧Temperature control device (substrate temperature control section)

91‧‧‧振動除去裝置(調整機構) 91‧‧‧Vibration removing device (adjustment mechanism)

92、93‧‧‧張力消除機構 92, 93‧‧‧Tension elimination mechanism

96‧‧‧旋轉驅動部 96‧‧‧Rotary drive unit

100‧‧‧基板處理裝置 100‧‧‧ substrate processing equipment

192、193‧‧‧振動吸收機構 192, 193‧‧‧Vibration absorption mechanism

292、293‧‧‧振動吸收機構 292, 293‧‧‧ Vibration absorption mechanism

392、393‧‧‧振動賦予機構 392, 393‧‧‧ Vibration imparting mechanism

S‧‧‧基板 S‧‧‧ substrate

CONT‧‧‧控制部 CONT‧‧‧Control Department

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

R(R1~R30)‧‧‧導引滾筒(導引部) R (R1 ~ R30) ‧‧‧Guide roller (Guide)

圖1係顯示本實施形態之基板處理裝置之整體構成的圖。 FIG. 1 is a diagram showing the overall configuration of a substrate processing apparatus according to this embodiment.

圖2係顯示本實施形態之基板處理裝置之基板處理部構成之剖面圖。 FIG. 2 is a cross-sectional view showing the structure of a substrate processing section of the substrate processing apparatus of this embodiment.

圖3係顯示本實施形態之加熱單元之構成之剖面圖。 Fig. 3 is a sectional view showing the structure of a heating unit according to this embodiment.

圖4係顯示本實施形態之加熱單元之構成之立體圖。 Fig. 4 is a perspective view showing the structure of a heating unit according to this embodiment.

圖5係顯示本實施形態之加熱裝置之構成之立體圖。 Fig. 5 is a perspective view showing the structure of a heating device according to this embodiment.

圖6係顯示本實施形態之配置於處理室之加熱裝置之配置例之圖。 FIG. 6 is a diagram showing an example of the arrangement of a heating device arranged in a processing chamber according to this embodiment.

圖7係顯示加熱裝置之配置例之比較圖。 FIG. 7 is a comparison diagram showing an example of the arrangement of the heating device.

圖8係顯示本實施形態之振動除去裝置之構成之側視圖。 Fig. 8 is a side view showing the structure of a vibration removing device according to this embodiment.

圖9係顯示振動除去裝置之其他構成之側視圖。 Fig. 9 is a side view showing another structure of the vibration removing device.

圖10係顯示振動除去裝置之其他構成之側視圖。 Fig. 10 is a side view showing another structure of the vibration removing device.

圖11係顯示振動除去裝置之其他構成之側視圖。 Fig. 11 is a side view showing another structure of the vibration removing device.

圖12係顯示振動除去裝置之其他構成之側視圖。 Fig. 12 is a side view showing another structure of the vibration removing device.

圖13係顯示振動除去裝置之其他構成之側視圖。 Fig. 13 is a side view showing another structure of the vibration removing device.

圖14係顯示本實施形態之處理室彼此間之構成之圖。 FIG. 14 is a diagram showing the configuration of the processing chambers in this embodiment.

圖15係顯示本實施形態之流體除去裝置之構成之圖。 Fig. 15 is a diagram showing the configuration of a fluid removal device according to this embodiment.

以下,參照圖式說明本實施形態。 Hereinafter, this embodiment will be described with reference to the drawings.

圖1係顯示本實施形態之基板處理裝置100之構成的圖。 FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 100 according to this embodiment.

如圖1所示,基板處理裝置100具有:供應帶狀之基板(例如片狀之薄膜構件)S之基板供應部2、對基板S之表面(被處理面)Sa進行處理之基板處理部3、回收基板S之基板回收部4、控制此等各部之控制部CONT。基板處理部3具備用以在從基板供應部2送出基板S後至藉由基板回收部4回收基板S之期間對基板S之表面執行各種處理之基板處理裝置100。此基板處理裝置100,可使用於在基板S上形成例如有機EL元件、液晶顯示元件等顯示元件(電子元件)之情形。 As shown in FIG. 1, the substrate processing apparatus 100 includes a substrate supply section 2 that supplies a strip-shaped substrate (for example, a sheet-like film member) S 2, and a substrate processing section 3 that processes a surface (processed surface) Sa of the substrate S 3. A substrate recovery section 4 that recovers the substrate S, and a control section CONT that controls these sections. The substrate processing section 3 includes a substrate processing apparatus 100 for performing various processes on the surface of the substrate S after the substrate S is sent from the substrate supply section 2 to the time when the substrate S is collected by the substrate recovery section 4. This substrate processing apparatus 100 can be used when a display element (electronic element) such as an organic EL element or a liquid crystal display element is formed on the substrate S.

此外,本實施形態中,係如圖1所示設定XYZ正交座標系統,以下適當使用此XYZ正交座標系統來進行說明。XYZ正交座標系統,例如沿水平面設定X軸及Y軸,沿垂直方向朝上設定Z軸。又,基板處理裝置100係整體沿X軸從其負側(-側)往正側(+側)搬送基板S。此時,帶狀之基板S之寬度方向(短邊方向)設定於Y軸方向。 In addition, in the present embodiment, the XYZ orthogonal coordinate system is set as shown in FIG. 1, and this XYZ orthogonal coordinate system is appropriately used for description below. The XYZ orthogonal coordinate system, for example, sets the X axis and the Y axis along the horizontal plane, and sets the Z axis upward in the vertical direction. In addition, the substrate processing apparatus 100 as a whole transfers the substrate S from the negative side (−) to the positive side (+ side) along the X axis. At this time, the width direction (short side direction) of the strip-shaped substrate S is set in the Y-axis direction.

作為在基板處理裝置100成為處理對象之基板S,可使用例如樹脂膜或不鏽鋼等之箔(foil)。樹脂膜可使用例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物(Ethylene vinyl copolymer)樹脂、聚氯乙烯基樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯基樹脂等材料。 As the substrate S to be processed in the substrate processing apparatus 100, a foil such as a resin film or stainless steel can be used. For the resin film, for example, polyethylene resin, polypropylene resin, polyester resin, Ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, Materials such as polycarbonate resin, polystyrene resin, vinyl acetate resin, etc.

基板S,以承受例如200℃程度之熱其尺寸亦實質上無變化之熱膨脹係數較小者較佳。例如可將無機填料混於樹脂膜以降低熱膨脹係數。作為無機填料,例如有氧化鈦、氧化鋅、氧化鋁、氧化矽等。 The substrate S is preferably one having a relatively small thermal expansion coefficient that has substantially no change in size due to a heat of about 200 ° C. For example, an inorganic filler may be mixed in a resin film to reduce the thermal expansion coefficient. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide.

基板S之寬度方向(短邊方向)之尺寸係形成為例如1m~2m程度、長度方向(長邊方向)之尺寸則形成為例如10m以上。當然,此尺寸僅為一例,並不限於此。例如基板S之Y方向之尺寸為50cm以下亦可、亦可為2m以上。又,基板S之X方向之尺寸亦可在10m以下。 The size of the substrate S in the width direction (short-side direction) is, for example, about 1 m to 2 m, and the size in the length direction (long-side direction) is, for example, 10 m or more. Of course, this size is only an example, and it is not limited to this. For example, the dimension in the Y direction of the substrate S may be 50 cm or less, or may be 2 m or more. The dimension in the X direction of the substrate S may be 10 m or less.

基板S係形成為具有可撓性。此處,所謂可撓性,係指例如對基板施以自重程度之力亦不會斷裂或破裂、而能將該基板加以彎折之性質。又,藉由自重程度之力而彎折之性質亦包含於可撓性。又,上述可撓性會隨著該基板材質、大小、厚度、以及温度等之環境等而改變。此外,基板S可使用一片帶狀之基板、亦可使用將複數個單位基板加以連接而形成為帶狀之構成。 The substrate S is formed to have flexibility. Here, the term "flexible" refers to a property that, for example, the substrate can be bent without breaking or cracking by applying a force of a weight to the substrate. In addition, the property of bending by the force of the degree of self-weight is also included in the flexibility. In addition, the flexibility described above will vary depending on the environment, such as the material, size, thickness, and temperature of the substrate. In addition, as the substrate S, a single strip-shaped substrate may be used, or a structure in which a plurality of unit substrates are connected to form a strip shape may be used.

基板供應部2係將例如捲成捲軸狀之基板S送出供應至基板處理部3。於基板供應部2,設有用以例如捲繞基板S之軸部或使該軸部旋轉之旋轉驅動裝置等。除此之外,亦可係設置例如用以覆蓋捲成捲軸狀狀態之基板S的覆蓋部等。此外,基板供應部2不限定於送出捲成捲軸狀之基板S之機構,只要係包含將帶狀之基板S於其長度方向依序送出之機構者即可。 The substrate supply unit 2 sends out and supplies the substrate S rolled into a reel shape to the substrate processing unit 3, for example. The substrate supply unit 2 is provided with, for example, a shaft portion for winding the shaft of the substrate S or a rotation driving device for rotating the shaft portion. In addition, a covering portion or the like for covering the substrate S in a rolled state may be provided. In addition, the substrate supply unit 2 is not limited to a mechanism for sending out the substrate S rolled into a reel shape, as long as it includes a mechanism for sequentially sending out the strip-shaped substrate S in its longitudinal direction.

基板回收部4係將通過基板處理部3所具備之基板處理裝置100之基板S例如捲取成捲軸狀加以回收。於基板回收部4,與基板供應部2同樣的,設有用以捲繞基板S之軸部及使該軸部旋轉之旋轉驅動源、以及覆蓋回收之基板S的覆蓋部等。此外,在基板處理部3將基板S例如切成平板(panel)狀之場合等時,亦可為例如將基板S回收成重疊狀態等與捲繞成捲軸狀之狀態不同之狀態回收基板S之構成。 The substrate recovery unit 4 is configured to take up a substrate S that has passed through the substrate processing apparatus 100 provided in the substrate processing unit 3 into a reel shape, for example. Similar to the substrate supply unit 2, the substrate recovery unit 4 is provided with a shaft portion for winding the substrate S, a rotation drive source for rotating the shaft portion, and a cover portion for covering the recovered substrate S and the like. In addition, when the substrate processing unit 3 cuts the substrate S, for example, into a panel shape, the substrate S may be recovered, for example, in a state in which the substrate S is recovered in an overlapped state and a state different from the state in which the substrate S is wound into a roll shape. Make up.

基板處理部3,將從基板供應部2供應之基板S搬送至基板回收部4,並在搬送過程對基板S之被處理面Sa進行處理。基板處理部3具有例如處理裝置10、搬送裝置(搬送部)20。 The substrate processing unit 3 transfers the substrate S supplied from the substrate supply unit 2 to the substrate recovery unit 4 and processes the processed surface Sa of the substrate S during the transfer process. The substrate processing unit 3 includes, for example, a processing device 10 and a transfer device (transfer portion) 20.

處理裝置10具有用以對基板S之被處理面Sa形成例如有機EL元 件之各種裝置。作為此種裝置,例如有用以在被處理面Sa上形成間隔壁之間隔壁形成裝置、用以形成電極的電極形成裝置、以及用以形成發光層之發光層形成裝置等。更具體而言,有液滴塗布裝置(例如噴墨型塗布裝置等)、成膜裝置(例如鍍敷裝置、蒸鍍裝置、濺鍍裝置)、曝光裝置、顯影裝置、表面改質裝置、洗淨裝置等。此等之各裝置,係沿基板S之搬送路徑適當設置。本實施形態中,作為處理裝置10例如以使用塗布裝置41、加熱裝置51~53、曝光裝置EX、顯影裝置42、洗淨裝置43、鍍敷裝置44(以上,於圖2以後詳述)等之構成為例來說明。 The processing device 10 includes various devices for forming, for example, an organic EL element on the processing surface Sa of the substrate S. Examples of such a device include a partition wall forming device for forming a partition wall on the surface to be processed Sa, an electrode forming device for forming an electrode, and a light emitting layer forming device for forming a light emitting layer. More specifically, there are a droplet coating device (e.g., an inkjet type coating device, etc.), a film forming device (e.g., a plating device, a vapor deposition device, a sputtering device), an exposure device, a developing device, a surface modification device, Net device and so on. Each of these devices is appropriately installed along the conveyance path of the substrate S. In the present embodiment, as the processing device 10, for example, a coating device 41, heating devices 51 to 53, an exposure device EX, a developing device 42, a cleaning device 43, a plating device 44 (above, described in detail after FIG. 2), and the like are used. The structure is described as an example.

搬送裝置20具有在基板處理部3內導引基板S之複數個導引滾筒(導引部)R(圖1中僅例示2個滾筒)。導引滾筒R沿基板S之搬送路徑配置。於複數個導引滾筒R中之至少一部分之導引滾筒R安裝有旋轉驅動機構(未圖示)。本實施形態中,搬送裝置20之搬送路徑之長度為例如全長數百公尺程度。 The conveyance device 20 includes a plurality of guide rollers (guide portions) R that guide the substrate S in the substrate processing section 3 (only two rollers are illustrated in FIG. 1). The guide roller R is arranged along the conveyance path of the substrate S. A rotation driving mechanism (not shown) is attached to at least a part of the plurality of guide rollers R. In the present embodiment, the length of the transport path of the transport device 20 is, for example, approximately several hundred meters in total length.

圖2係顯示基板處理部3一部分之剖面圖。 FIG. 2 is a cross-sectional view showing a part of the substrate processing section 3.

如圖2所示,基板處理部3具有三個處理室11~13。處理室11~13被分隔部14分隔。 As shown in FIG. 2, the substrate processing unit 3 includes three processing chambers 11 to 13. The processing chambers 11 to 13 are partitioned by a partition 14.

分隔部14具備構成處理室11之底部之分隔構件14a、構成處理室11之頂部及處理室12之底部之分隔構件14b、構成處理室12之頂部及處理室13之底部之分隔構件14c、構成處理室13之頂部之分隔構件14d。 The partition 14 includes a partition member 14a constituting the bottom of the processing chamber 11, a partition member 14b constituting the top of the processing chamber 11 and the bottom of the processing chamber 12, a partition member 14c constituting the top of the processing chamber 12 and the bottom of the processing chamber 13, A partition member 14d on the top of the processing chamber 13.

處理室11係在複數個處理室中配置於重力方向之最下部(最靠-Z側)。處理室11形成對基板S進行使用液體之處理(濕式處理)之處理空間。於處理室11,例如如圖2所示,作為處理裝置10係設有具備光阻液收容容器(收容用以對基板S塗布之光阻液)之塗布裝置41、具備顯影液收容容器(收容用以對基板S進行顯影處理之顯影液)之顯影裝置42、具備洗淨液收容容器(收容洗淨基板S之洗淨液)之洗淨裝置43、具備鍍敷液收容容器(收容用以對洗淨處理後之基板S形成圖案之鍍敷液)之鍍敷裝置44。此外,不限於上述液體,於處理室11亦能收容使用 各種液體之處理裝置。 The processing chamber 11 is disposed at the lowermost position (most near the -Z side) in the direction of gravity among the plurality of processing chambers. The processing chamber 11 forms a processing space for processing the substrate S using a liquid (wet processing). In the processing chamber 11, for example, as shown in FIG. 2, a processing device 10 is provided with a coating device 41 including a photoresist liquid storage container (accommodating a photoresist liquid for coating the substrate S), and a developer liquid storage container (accommodating container). A developing device 42 for developing solution for developing substrate S), a cleaning device 43 with a cleaning solution storage container (a cleaning solution for cleaning substrate S), and a plating liquid storage container (a storage solution for storing A plating device 44 for forming a pattern on the substrate S after the cleaning process. In addition, it is not limited to the above-mentioned liquids, and the processing chamber 11 can also accommodate processing devices using various liquids.

塗布裝置41具有配置於該塗布裝置41內部、導引基板S之導引滾筒R2及將塗布處理結束之基板S從塗布裝置41內搬出至處理室11之導引滾筒R3。於基板S之搬送方向之導引滾筒R2之上游側配置有將從基板供應部2供應之基板S導引至塗布裝置41之導引滾筒R1。於顯影裝置42具有配置於該顯影裝置42內部、導引基板S之導引滾筒R20及將顯影處理結束之基板S從顯影裝置42內搬出至處理室11內之導引滾筒R21。於基板S之搬送方向之導引滾筒R20之上游側配置有從處理室12之加熱裝置52經由導引滾筒R17將基板S導引至顯影裝置42之導引滾筒R18及R19。 The coating device 41 includes a guide roller R2 disposed inside the coating device 41 and guiding the substrate S, and a guide roller R3 for carrying out the substrate S after the coating process is completed from the coating device 41 to the processing chamber 11. A guide roller R1 that guides the substrate S supplied from the substrate supply unit 2 to the coating device 41 is disposed upstream of the guide roller R2 in the conveying direction of the substrate S. The developing device 42 includes a guide roller R20 disposed inside the developing device 42 and guiding the substrate S, and a guide roller R21 that carries the substrate S that has undergone the development process from the developing device 42 into the processing chamber 11. On the upstream side of the guide roller R20 in the conveying direction of the substrate S, guide rollers R18 and R19 for guiding the substrate S to the developing device 42 from the heating device 52 of the processing chamber 12 via the guide roller R17 are arranged.

於基板S之搬送方向之導引滾筒R21之下游側配置有將基板S從顯影裝置42往洗淨裝置43導引之導引滾筒R22及R23。此外,此等導引滾筒R1、R18、R19、R22及R23配置於處理室11內。 On the downstream side of the guide roller R21 in the conveying direction of the substrate S, guide rollers R22 and R23 that guide the substrate S from the developing device 42 to the cleaning device 43 are arranged. In addition, these guide rollers R1, R18, R19, R22, and R23 are arranged in the processing chamber 11.

於洗淨裝置43具備配置於該洗淨裝置43內部、導引基板S之導引滾筒R24及將洗淨處理結束之基板S從洗淨裝置43內搬出至處理室11內之導引滾筒R25。於鍍敷裝置44具備配置於該鍍敷裝置44內部、導引基板S之導引滾筒R28及將鍍敷處理結束之基板S從鍍敷裝置44內搬出至處理室11內之導引滾筒R29。 The cleaning device 43 includes a guide roller R24 disposed inside the cleaning device 43 and guiding the substrate S, and a guide roller R25 for carrying out the cleaning process of the substrate S from the cleaning device 43 to the processing chamber 11. . The plating device 44 includes a guide roller R28 disposed inside the plating device 44 and guiding the substrate S, and a guide roller R29 for carrying out the plating process-completed substrate S from the plating device 44 to the processing chamber 11. .

於分隔構件14a設有構成連接於未圖示之回收裝置之廢液回收流路一部分之複數個回收管(廢液回收部、回收部)45。回收管45之一端部分別連接於塗布裝置41、顯影裝置42及洗淨裝置43,另一端部連接於連接在回收裝置之未圖示廢液回收流路。各回收管45係將在塗布裝置41、顯影裝置42及洗淨裝置43成為廢液之光阻液、顯影液及洗淨液經由廢液回收流路排出至回收裝置。於回收管45設有未圖示之開閉閥。控制部CONT能控制該開閉閥之開閉時點。本實施形態中,由於於重力方向最下部之處理室11設有濕式處理用之裝置,因此能抑制此等裝置與回收裝置之間之廢液回收流路之流路系長度。 The partition member 14a is provided with a plurality of recovery pipes (a waste liquid recovery unit, a recovery unit) 45 constituting a part of a waste liquid recovery flow path connected to a recovery device (not shown). One end portion of the recovery tube 45 is connected to the coating device 41, the developing device 42, and the cleaning device 43, respectively, and the other end portion is connected to a waste liquid recovery flow path (not shown) connected to the recovery device. Each recovery pipe 45 discharges the photoresist liquid, the developing liquid, and the cleaning liquid that become waste liquid in the coating device 41, the developing device 42, and the cleaning device 43 through the waste liquid recovery flow path to the recovery device. An on-off valve (not shown) is provided in the recovery pipe 45. The control unit CONT can control the timing of opening and closing the on-off valve. In this embodiment, since the processing chamber 11 at the lowermost part in the direction of gravity is provided with a device for wet processing, the length of the flow path system of the waste liquid recovery flow path between these devices and the recovery device can be suppressed.

處理室12配置於處理室11上方(+Z側)。處理室12形成對基板S進行加熱處理之處理空間。於處理室12,作為處理裝置10係設有加熱基板S之加熱裝置51~53。加熱裝置51係加熱藉由塗布裝置41塗布有光阻液之基板S,使光阻液乾燥。加熱裝置52係再度加熱通過處理室13之曝光裝置EX之基板S,使光阻液乾燥。加熱裝置52係以與加熱裝置51之加熱溫度不同之溫度、例如較加熱裝置51之加熱溫度高之溫度加熱基板S。加熱裝置53係加熱藉由顯影裝置42進行顯影處理且藉由洗淨裝置43洗淨後之基板S,使基板S之表面乾燥。 The processing chamber 12 is disposed above the processing chamber 11 (+ Z side). The processing chamber 12 forms a processing space for heating the substrate S. In the processing chamber 12, heating devices 51 to 53 for heating the substrate S are provided as the processing device 10. The heating device 51 heats the substrate S coated with the photoresist liquid by the coating device 41 to dry the photoresist liquid. The heating device 52 heats the substrate S of the exposure device EX passing through the processing chamber 13 again to dry the photoresist liquid. The heating device 52 heats the substrate S at a temperature different from the heating temperature of the heating device 51, for example, a temperature higher than the heating temperature of the heating device 51. The heating device 53 heats the substrate S that has undergone the development processing by the developing device 42 and is cleaned by the cleaning device 43 to dry the surface of the substrate S.

於基板S之搬送方向之加熱裝置51之上游側配置有將通過處理室11內之塗布裝置41之基板S往該加熱裝置51導引之導引滾筒R4。於基板S之搬送方向之加熱裝置51之下游側,沿搬送路徑配置有導引滾筒R5、R6及R7,藉由此等導引滾筒R5、R6及R7將基板S導引至處理室13內之曝光裝置EX。 A guide roller R4 for guiding the substrate S passing through the coating device 41 in the processing chamber 11 toward the heating device 51 is disposed upstream of the heating device 51 in the conveying direction of the substrate S. On the downstream side of the heating device 51 in the conveying direction of the substrate S, guide rollers R5, R6, and R7 are arranged along the conveying path, and the substrate S is guided into the processing chamber 13 by the guide rollers R5, R6, and R7. Exposure device EX.

於基板S之搬送方向之加熱裝置52之上游側,沿搬送路徑配置有將通過處理室13之曝光裝置EX之基板S經由導引滾筒R13往該加熱裝置52導引之導引滾筒R14、R15及R16。於基板S之搬送方向之加熱裝置52之下游側,於處理室11之顯影裝置42配置有經由導引滾筒R18及R19導引基板S之導引滾筒R17。 On the upstream side of the heating device 52 in the conveying direction of the substrate S, guide rollers R14, R15 that guide the substrate S of the exposure device EX passing through the processing chamber 13 to the heating device 52 via the guide roller R13 are arranged along the conveying path. And R16. On the downstream side of the heating device 52 in the conveying direction of the substrate S, the developing device 42 of the processing chamber 11 is provided with a guide roller R17 that guides the substrate S through the guide rollers R18 and R19.

於基板S之搬送方向之加熱裝置53之上游側配置有將通過洗淨裝置43之基板S往該加熱裝置53導引之導引滾筒R26。又,於基板S之搬送方向之加熱裝置53之下游側,配置有將基板S導引至處理室11內之鍍敷裝置44之導引滾筒R27。又,於導引滾筒R27之+X側配置有將基板S導引至次一步驟之導引滾筒R30。此等導引滾筒R4、R5、R6、R7、R14、R15、R16、R17、R26、R27及R30配置於處理室12內。 A guide roller R26 for guiding the substrate S passing through the cleaning device 43 toward the heating device 53 is disposed upstream of the heating device 53 in the conveying direction of the substrate S. Further, on the downstream side of the heating device 53 in the conveying direction of the substrate S, a guide roller R27 for guiding the substrate S to the plating device 44 in the processing chamber 11 is arranged. A guide roller R30 for guiding the substrate S to the next step is arranged on the + X side of the guide roller R27. These guide rollers R4, R5, R6, R7, R14, R15, R16, R17, R26, R27 and R30 are arranged in the processing chamber 12.

於分隔構件14b,在處理室11與處理室12之間設有用以使基板S通過之複數個連接部15~19。連接部15~19例如係於Z方向貫通分隔構件14b之貫通孔。各連接部15~19形成為基板S能通過之尺寸。基板S藉由通過連接部15~19 而橫跨處理室11與處理室12移動。 Between the processing chamber 11 and the processing chamber 12, a plurality of connection portions 15 to 19 are provided between the partition member 14 b to allow the substrate S to pass therethrough. The connection portions 15 to 19 are, for example, through holes that penetrate the partition member 14b in the Z direction. Each of the connection portions 15 to 19 is formed in a size through which the substrate S can pass. The substrate S is moved across the processing chamber 11 and the processing chamber 12 by the connection portions 15 to 19.

導引滾筒R3及導引滾筒R4係導引基板S通過連接部15。導引滾筒R17及導引滾筒R18係導引基板S通過連接部16。導引滾筒R25及導引滾筒R26係導引基板S通過連接部17。導引滾筒R27及導引滾筒R28係導引基板S通過連接部18。導引滾筒R29及導引滾筒R30係導引基板S通過連接部19。如上述,搬送裝置20係導引該基板S以使基板S通過連接部15~19。 The guide roller R3 and the guide roller R4 are guide substrates S that pass through the connection portion 15. The guide roller R17 and the guide roller R18 are guide substrates S that pass through the connection portion 16. The guide roller R25 and the guide roller R26 pass through the connecting portion 17 through the guide substrate S. The guide roller R27 and the guide roller R28 pass through the connecting portion 18 through the guide substrate S. The guide roller R29 and the guide roller R30 are guide substrates S passing through the connection portion 19. As described above, the transfer device 20 guides the substrate S so that the substrate S passes through the connection portions 15 to 19.

此外,隔著連接部15~19配置之上述導引滾筒R3、R4、R17、R18、R25~R30例如亦可係具有調整基板S之溫度之調溫裝置之構成。藉由此構成,能在加熱裝置51~53之前後調整基板S之溫度。 In addition, the above-mentioned guide rollers R3, R4, R17, R18, and R25 to R30, which are disposed across the connecting portions 15 to 19, may also have a structure having a temperature adjustment device that adjusts the temperature of the substrate S, for example. With this configuration, the temperature of the substrate S can be adjusted before and after the heating devices 51 to 53.

其次說明加熱裝置51~53之詳細構成。加熱裝置51~53分別具有一個或複數個加熱單元50。圖3係顯示加熱單元50構成之側剖面圖。圖4係顯示加熱單元50構成之立體圖。 The detailed configuration of the heating devices 51 to 53 will be described next. Each of the heating devices 51 to 53 includes one or a plurality of heating units 50. FIG. 3 is a side cross-sectional view showing the configuration of the heating unit 50. FIG. 4 is a perspective view showing the configuration of the heating unit 50.

如圖3及圖4所示,加熱單元50具有筐體60及加熱筐體60內之加熱部70。 As shown in FIGS. 3 and 4, the heating unit 50 includes a casing 60 and a heating portion 70 in the heating casing 60.

筐體60係藉由一對第一壁部(右側壁部60d及左側壁部60c)與一對第二壁部(上壁部60f及下壁部60e)形成內部空間之矩形環狀。又,形成於筐體60之內部空間發揮基板收容室(收容室)62之功能。於筐體60之一方之第一壁部(左側側壁部)60c形成有基板搬入口(搬入口)61,於筐體60之另一方之第一壁部(右側側壁部)60d形成有基板搬出口(搬出口)63。又,將筐體60之一方端面(-Y側端面)作為第一開口端60a,將筐體60之另一方端面(+Y側端面)作為第二開口端60b。於筐體60之第一開口端60a及第二開口端60b設有用以使複數個加熱單元50連結之連結部(未圖示)。 The casing 60 has a rectangular ring shape with an internal space formed by a pair of first wall portions (the right wall portion 60d and the left wall portion 60c) and a pair of the second wall portions (the upper wall portion 60f and the lower wall portion 60e). The internal space formed in the housing 60 functions as a substrate storage room (accommodation room) 62. A substrate carrying inlet (carrying entrance) 61 is formed on the first wall portion (left side wall portion) 60c on one side of the casing 60, and a substrate carrying port is formed on the other first wall portion (right side wall portion) 60d of the casing 60 Exit (removal exit) 63. Moreover, one end surface (-Y side end surface) of the casing 60 is used as a first open end 60a, and the other end surface (+ Y side end surface) of the casing 60 is used as a second open end 60b. At the first open end 60a and the second open end 60b of the casing 60, a connecting portion (not shown) for connecting a plurality of heating units 50 is provided.

筐體60之第一開口端60a及第二開口端60b能安裝密閉基板收容室62之蓋部。因此,僅使用一個加熱單元50時,能藉由阻塞開口端60a及60b之 端面來形成密閉空間。又,藉由連結複數個加熱單元50,能形成較使用單體之加熱單元50時更大之密閉空間。此情形下,能以蓋部阻塞配置於連結方向之端之加熱單元50之端面。 The first open end 60a and the second open end 60b of the casing 60 can be fitted with the lid portion of the sealed substrate storage chamber 62. Therefore, when only one heating unit 50 is used, a closed space can be formed by blocking the end faces of the open ends 60a and 60b. In addition, by connecting a plurality of heating units 50, a larger sealed space can be formed than when a single heating unit 50 is used. In this case, the end face of the heating unit 50 disposed at the end in the connecting direction can be blocked by the cover portion.

基板搬入口61及基板搬出口63形成為基板S能通過之尺寸。亦即,基板搬入口61及基板搬出口63之Z方向尺寸形成為較基板S之厚度大。又,基板搬入口61及基板搬出口63之Y方向尺寸形成為較基板S之短邊方向之尺寸大。 The substrate carrying-in port 61 and the substrate carrying-out port 63 are formed so that the board | substrate S can pass. That is, the Z-direction dimensions of the substrate carrying inlet 61 and the substrate carrying outlet 63 are formed larger than the thickness of the substrate S. The Y-direction dimensions of the substrate carrying-in entrance 61 and the substrate carrying-out exit 63 are formed to be larger than those in the short-side direction of the substrate S.

於基板收容室62設有導引基板S之翻折滾筒(翻折部)64~67。翻折滾筒64~67被未圖示之支承構件於筐體60支承成能旋轉。翻折滾筒64及66配置於基板收容室62之+X側端部、亦即右側側壁部60d側。翻折滾筒65及67配置於基板收容室62之-X側端部、亦即左側側壁部60c側。翻折滾筒64、65、66及67依此順序從筐體60上部(+Z側)往下部(-Z側)配置。 The substrate accommodating chamber 62 is provided with a folding roller (folding portion) 64 to 67 for guiding the substrate S. The folding rollers 64 to 67 are rotatably supported by a casing 60 by a support member (not shown). The folding rollers 64 and 66 are arranged on the + X side end portion of the substrate storage chamber 62, that is, on the right side wall portion 60d side. The folding rollers 65 and 67 are arranged on the -X side end portion of the substrate storage chamber 62, that is, on the left side wall portion 60c side. The folding rollers 64, 65, 66, and 67 are arranged in this order from the upper part (+ Z side) to the lower part (-Z side) of the casing 60.

翻折滾筒64將從基板搬入口61搬入並往+X方向行進之基板S往-X方向翻折。翻折滾筒65將在翻折滾筒64被翻折並往-X方向行進之基板S往+X方向翻折。翻折滾筒66將在翻折滾筒65被翻折並往+X方向行進之基板S往-X方向翻折。翻折滾筒67將在翻折滾筒66被翻折並往-X方向行進之基板S往+X方向翻折。 The folding roller 64 folds the substrate S carried in from the substrate carrying port 61 and traveling in the + X direction to the -X direction. The folding roller 65 folds the substrate S folded in the folding roller 64 and travels in the -X direction to the + X direction. The folding roller 66 folds the substrate S folded in the folding roller 65 and travels in the + X direction to the -X direction. The folding roller 67 folds the substrate S folded in the folding roller 66 and travels in the -X direction to the + X direction.

因此,藉由翻折滾筒64~67而導引之基板S在從Z方向觀看時該基板S之翻折片(一部分)彼此重疊,且該翻折片彼此以非接觸狀態配置。因此,可一邊維持基板S之被處理面Sa之狀態,一邊有效率地將基板S收容於基板收容室62。 Therefore, when the substrate S guided by the folding rollers 64 to 67 is viewed from the Z direction, the folding pieces (parts) of the substrate S overlap each other, and the folding pieces are arranged in a non-contact state with each other. Therefore, the substrate S can be efficiently stored in the substrate storage chamber 62 while maintaining the state of the processing surface Sa of the substrate S.

於翻折滾筒64~67中之至少1個連接有例如馬達等未圖示之旋轉驅動機構。控制部CONT能調整該旋轉驅動機構之轉數及旋轉之時點。因此,能依各加熱單元50調整基板S之搬送速度。 A rotary drive mechanism (not shown), such as a motor, is connected to at least one of the folding rollers 64 to 67. The control unit CONT can adjust the number of rotations and the timing of the rotation of the rotation driving mechanism. Therefore, the conveyance speed of the substrate S can be adjusted by each heating unit 50.

又,亦可使翻折滾筒64~67中之至少1個移動於X方向、Y方向及Z方向之任一方向。此情形下,能藉由控制部CONT控制翻折滾筒64~67,來依各加熱單元50調整基板S之搬送路徑。此外,本實施形態中,雖於筐體60內配置有4個翻折滾筒,但亦能依照基板S之加熱時間增減其數目。 In addition, at least one of the folding rollers 64 to 67 may be moved in any of the X direction, the Y direction, and the Z direction. In this case, the conveyance path of the substrate S can be adjusted by each heating unit 50 by controlling the folding rollers 64 to 67 by the control unit CONT. In addition, in this embodiment, although four folding rollers are arranged in the casing 60, the number can be increased or decreased according to the heating time of the substrate S.

圖5係例示加熱裝置51~53之構成之圖。 FIG. 5 is a diagram illustrating the configuration of the heating devices 51 to 53.

如圖5所示,加熱裝置51~53具有於Y方向排列配置有複數個之加熱單元50。該複數個加熱單元50為相鄰之加熱單元50彼此連結之狀態。此外,圖5中係省略加熱單元50之第一開口端60a之蓋部。 As shown in FIG. 5, the heating devices 51 to 53 include a plurality of heating units 50 arranged in an array in the Y direction. The plurality of heating units 50 are in a state where adjacent heating units 50 are connected to each other. In addition, in FIG. 5, the cover portion of the first open end 60 a of the heating unit 50 is omitted.

藉由連結加熱單元50使基板收容室62彼此連通。因此,藉由加熱單元50連結,能構成設有複數個基板S之搬送路徑之一個加熱爐。加熱部70亦可為於複數個加熱單元50共通地設置之構成,亦可為於加熱單元50之各個個別設置之構成。 The substrate storage chambers 62 are communicated with each other by the connection heating unit 50. Therefore, by connecting the heating unit 50, one heating furnace provided with the conveyance path of several board | substrate S can be comprised. The heating unit 70 may have a structure provided in common to the plurality of heating units 50 or a structure provided in each of the heating units 50 individually.

在加熱部70於複數個加熱單元50共通地設置之情形,加熱部70能一起加熱形成為一個加熱爐之複數個基板收容室62。因此,經由不同搬送路徑而搬送之複數個基板S係在一個加熱爐被加熱部70一起加熱。因此,能謀求加熱處理之效率化。此外,在將加熱部70分別設於各加熱單元50時之構成之情形,亦可依各加熱單元50調整加熱溫度或加熱之時點。又,作為加熱部70,能使用發熱機構或照射電磁波之照射部(未圖示)等。 In a case where the heating section 70 is provided in common to the plurality of heating units 50, the heating section 70 can be heated together to form a plurality of substrate storage chambers 62 as one heating furnace. Therefore, the plurality of substrates S transported through different transport paths are heated together by the heating unit 70 in one heating furnace. Therefore, it is possible to improve the efficiency of the heat treatment. In addition, in a case where the heating unit 70 is separately provided in each heating unit 50, the heating temperature or the timing of heating may be adjusted according to each heating unit 50. In addition, as the heating section 70, a heating mechanism or an irradiation section (not shown) for radiating electromagnetic waves can be used.

圖6係顯示處理室11中之加熱裝置51及52之配置之圖。 FIG. 6 is a diagram showing the arrangement of the heating devices 51 and 52 in the processing chamber 11.

圖6所示之構成中,係在處理室12使複數個加熱單元50連結之加熱裝置51於Y方向排列配置有複數個(3個)之構成。如此,藉由使加熱單元50或加熱裝置51於Y方向排列配置,與如圖7所示之使加熱單元50排列配置於X方向之構成相較,能更節約處理室12之空間。 The configuration shown in FIG. 6 is a configuration in which a plurality of (three) heating devices 51 that connect a plurality of heating units 50 in the processing chamber 12 are arranged in the Y direction. In this way, by arranging the heating units 50 or the heating devices 51 in the Y direction, as compared with the configuration in which the heating units 50 are arranged in the X direction as shown in FIG.

返回圖2,處理室13配置於處理室12之上方(+Z側)。處理室13係 對基板S進行曝光處理之處理空間。於處理室13,作為處理裝置10係設有曝光裝置EX。曝光裝置EX係對在塗布裝置41中塗布於基板S之光阻層照射經由光罩圖案之曝光用光。於處理室13配置有將基板S導引至被照射曝光裝置EX之曝光用光之位置之導引滾筒R10及R11。 Returning to FIG. 2, the processing chamber 13 is disposed above the processing chamber 12 (+ Z side). The processing chamber 13 is a processing space for exposing the substrate S. In the processing chamber 13, an exposure device EX is provided as the processing device 10. The exposure device EX irradiates the photoresist layer coated on the substrate S in the coating device 41 with exposure light passing through a mask pattern. In the processing chamber 13, guide rollers R10 and R11 that guide the substrate S to a position where the exposure light of the exposure device EX is irradiated are arranged.

於分隔構件14c形成有開口部90。開口部90係在Z方向貫通分隔構件14c而形成。基板S藉由導引滾筒R8及R9,經由該開口部90從處理室12往處理室13被導引。又,基板S藉由導引滾筒R12及R13,經由該開口部90從處理室13往處理室12被導引。如上述,開口部90係基板S通過之部分。 An opening 90 is formed in the partition member 14c. The opening portion 90 is formed through the partition member 14c in the Z direction. The substrate S is guided from the processing chamber 12 to the processing chamber 13 through the openings 90 through the guide rollers R8 and R9. The substrate S is guided from the processing chamber 13 to the processing chamber 12 through the openings 90 through the guide rollers R12 and R13. As described above, the opening portion 90 is a portion through which the substrate S passes.

於開口部90內部設有振動除去裝置(調整機構)91,其除去被搬送裝置20(例如導引滾筒R8~R13等)導引之基板S之振動。振動除去裝置91為藉由消除基板S之張力而使基板S之振動傳達性降低來除去傳達至基板S之振動之構成。因此,本實施形態之振動除去裝置91具有用以消除基板S之張力之張力消除機構92及93。此外,振動除去裝置91可不完全消除基板S之振動,只要能將振動減低至處理裝置能容許之程度即可。因此,張力消除機構亦能稱為張力減低機構。 A vibration removing device (adjustment mechanism) 91 is provided inside the opening 90 to remove the vibration of the substrate S guided by the transfer device 20 (for example, the guide rollers R8 to R13). The vibration removing device 91 is configured to remove vibration transmitted to the substrate S by eliminating the tension of the substrate S and reducing the vibration transmission property of the substrate S. Therefore, the vibration removing device 91 of this embodiment includes tension removing mechanisms 92 and 93 for removing the tension of the substrate S. In addition, the vibration removing device 91 may not completely eliminate the vibration of the substrate S, as long as the vibration can be reduced to a level that the processing device can tolerate. Therefore, the tension relief mechanism can also be called a tension reduction mechanism.

張力消除機構92配置於較曝光裝置EX(導引滾筒R10)更靠基板S之搬送方向上游側。更具體而言,張力消除機構92配置於導引滾筒R8與導引滾筒R9之間。張力消除機構93配置於較曝光裝置EX(導引滾筒R11)更靠基板S之搬送方向下游側。更具體而言,張力消除機構93配置於導引滾筒R12與導引滾筒R13之間。 The strain relief mechanism 92 is disposed on the upstream side of the substrate S in the conveyance direction of the exposure device EX (the guide roller R10). More specifically, the tension relief mechanism 92 is disposed between the guide roller R8 and the guide roller R9. The strain relief mechanism 93 is disposed on the downstream side of the substrate S in the conveyance direction of the exposure device EX (the guide roller R11). More specifically, the tension relief mechanism 93 is disposed between the guide roller R12 and the guide roller R13.

圖8係顯示張力消除機構92及93之構成之圖。 FIG. 8 is a diagram showing the configuration of the tension relief mechanisms 92 and 93.

如圖8所示,張力消除機構92及93具有方向轉換滾筒94a及94b(方向轉換部94)與夾持滾筒95a及95b(夾持部95)。方向轉換滾筒94a及94b係將基板S之搬送方向轉換為基板S往重力方向(-Z方向)鬆弛。具體而言,基板S中之方向轉 換滾筒94a與方向轉換滾筒94b間之部分Sb為鬆弛之狀態。又,於方向轉換滾筒94a設有溫度調整機構(基板調溫部)94c。藉由溫度調整機構94c調整基板S中接觸於方向轉換滾筒94a之部分之溫度。此外,該溫度調整機構94c亦能省略。 As shown in FIG. 8, the tension relief mechanisms 92 and 93 include direction conversion rollers 94 a and 94 b (direction conversion portion 94) and nip rollers 95 a and 95 b (nip portion 95). The direction conversion rollers 94a and 94b change the conveying direction of the substrate S into that the substrate S is loosened in the direction of gravity (-Z direction). Specifically, the portion Sb between the direction conversion roller 94a and the direction conversion roller 94b in the substrate S is in a relaxed state. In addition, a temperature adjustment mechanism (substrate temperature adjustment section) 94c is provided on the direction conversion drum 94a. The temperature of the portion of the substrate S that is in contact with the direction changing roller 94a is adjusted by the temperature adjustment mechanism 94c. The temperature adjustment mechanism 94c can be omitted.

夾持滾筒95a設於在與方向轉換滾筒94a之間夾著基板S之位置。夾持滾筒95b設於在與方向轉換滾筒94b之間夾著基板S之位置。夾持滾筒95a及95b連接於旋轉驅動部96。旋轉驅動部96個別調整夾持滾筒95a及95b之旋轉時點或轉數。因此,能在形成有鬆弛部分Sb之狀態下搬送基板S。 The nip roller 95a is provided at a position where the substrate S is sandwiched between the nip roller 95a and the direction change roller 94a. The nip roller 95b is provided at a position between the substrate S and the direction change roller 94b. The nip rollers 95 a and 95 b are connected to a rotation driving unit 96. The rotation driving unit 96 individually adjusts the timing or number of rotations of the nip rollers 95a and 95b. Therefore, the substrate S can be conveyed while the slack portion Sb is formed.

又,在基板S中以方向轉換滾筒94a與夾持滾筒95a所夾之部分與基板S中以方向轉換滾筒94b與夾持滾筒95b所夾之部分之間,能以搬送速度不同之方式搬送基板S。是以,能一邊調整鬆弛部分Sb之尺寸,一邊搬送基板S。 In addition, the substrate can be conveyed at a different speed between the portion sandwiched by the direction conversion roller 94a and the clamping roller 95a in the substrate S and the portion sandwiched by the direction conversion roller 94b and the clamping roller 95b in the substrate S S. Therefore, the substrate S can be transported while adjusting the size of the slack portion Sb.

如上述,藉由張力消除機構92及93形成鬆弛部分Sb並使基板S之張力消除,來自方向轉換滾筒94a及夾持滾筒95a之上游側之振動係被減低。因此,在隔著張力消除機構92及93之處理室12與處理室13之間,抑制基板S之振動之傳達。因此,配置於處理室13之曝光裝置EX,係不受處理室11或處理室12之振動影響地進行曝光處理。由於此種張力消除機構92及93配置於分隔構件14c,因此能有效率地利用基板處理部3之處理室11~13之空間。 As described above, the slackness portions Sb are formed by the tension-relief mechanisms 92 and 93 and the tension of the substrate S is eliminated, thereby reducing the vibration system from the upstream of the direction change roller 94a and the nip roller 95a. Therefore, transmission of the vibration of the substrate S is suppressed between the processing chamber 12 and the processing chamber 13 via the tension relief mechanisms 92 and 93. Therefore, the exposure apparatus EX disposed in the processing chamber 13 performs exposure processing without being affected by the vibration of the processing chamber 11 or the processing chamber 12. Since such strain relief mechanisms 92 and 93 are arranged on the partition member 14c, the spaces in the processing chambers 11 to 13 of the substrate processing section 3 can be efficiently used.

其次,說明使用如上述構成之基板處理裝置100製造有機EL元件、液晶顯示元件等顯示元件(電子元件)之步驟。基板處理裝置100係依照控制部CONT之控制製造該顯示元件。 Next, the steps for manufacturing display elements (electronic elements) such as organic EL elements and liquid crystal display elements using the substrate processing apparatus 100 configured as described above will be described. The substrate processing apparatus 100 manufactures the display element according to the control of the control unit CONT.

首先,將捲纏於未圖示之滾筒之基板S安裝於基板供應部2。控制部CONT以從此狀態從基板供應部2送出該基板S之方式使未圖示之滾筒旋轉。接著,以設於基板回收部4之未圖示之滾筒捲取通過基板處理部3之該基板S。 First, a substrate S wound around a roller (not shown) is mounted on the substrate supply unit 2. The control unit CONT rotates a roller (not shown) to feed the substrate S from the substrate supply unit 2 from this state. Next, the substrate S passing through the substrate processing section 3 is taken up by a roller (not shown) provided in the substrate recovery section 4.

控制部CONT,在基板S從基板供應部2送出後至以基板回收部4捲取之期間,係藉由基板處理部3之搬送裝置20使基板S在該基板處理部3內適當 地搬送。控制部CONT,首先使基板S搬入基板處理部3之處理室11。以下,說明控制部CONT之動作。 The control unit CONT appropriately transfers the substrate S in the substrate processing unit 3 by the transfer device 20 of the substrate processing unit 3 after the substrate S is delivered from the substrate supply unit 2 and is wound up by the substrate recovery unit 4. The control unit CONT first carries the substrate S into the processing chamber 11 of the substrate processing unit 3. The operation of the control unit CONT will be described below.

搬入處理室11之基板S,經由如圖2所示之導引滾筒R1而搬入塗布裝置41。在塗布裝置41,基板S被導引滾筒R2往+X方向搬送。在搬送之過程中,於基板S之被處理面Sa形成感光劑之塗布膜。在塗布裝置41被進行處理之基板S藉由導引滾筒R3之導引經由連接部15往處理室12搬送。 The substrate S carried into the processing chamber 11 is carried into the coating apparatus 41 via the guide roller R1 shown in FIG. 2. In the coating apparatus 41, the substrate S is conveyed in the + X direction by the guide roller R2. During the transportation, a coating film of a photosensitizer is formed on the processing surface Sa of the substrate S. The substrate S processed in the coating apparatus 41 is conveyed to the processing chamber 12 through the connection portion 15 by the guide of the guide roller R3.

搬入處理室12之基板S經由導引滾筒R4從加熱裝置51之基板搬入口61往基板收容室62搬入(參照圖3)。在基板收容室62,在基板S被翻折複數次之狀態下加熱基板S,在此搬送狀態下進行基板S之加熱。因此,能進行有效地利用了基板收容室62空間之加熱處理。在加熱裝置51,藉由加熱使形成於基板S之塗布膜乾燥。在進行加熱處理後,從基板搬出口63搬出之基板S經由導引滾筒R5、R6及R7往開口部90搬送。 The substrate S carried into the processing chamber 12 is carried into the substrate storage chamber 62 from the substrate carrying inlet 61 of the heating device 51 via the guide roller R4 (see FIG. 3). In the substrate storage chamber 62, the substrate S is heated in a state where the substrate S is folded several times, and the substrate S is heated in the transported state. Therefore, a heating process that effectively uses the space of the substrate storage chamber 62 can be performed. In the heating device 51, the coating film formed on the substrate S is dried by heating. After the heat treatment is performed, the substrate S carried out from the substrate carrying port 63 is transferred to the opening 90 through the guide rollers R5, R6, and R7.

到達開口部90之基板S,被導引滾筒R8搬入張力消除機構92。在張力消除機構92,藉由在以方向轉換滾筒94a與夾持滾筒95a所夾之部分與以方向轉換滾筒94b與夾持滾筒95b所夾之部分之間使搬送速度不同,以於基板S形成鬆弛部分Sb。 The substrate S that has reached the opening 90 is carried into the tension removing mechanism 92 by the guide roller R8. In the tension removing mechanism 92, the conveying speed is different between the portion sandwiched by the direction conversion roller 94a and the clamping roller 95a and the portion sandwiched by the direction conversion roller 94b and the clamping roller 95b so that the substrate S is formed Slack.

在形成鬆弛部分Sb後,使方向轉換滾筒94a及94b與夾持滾筒95a及95b對基板S之搬送速度相等。藉由此動作,使基板S在形成有鬆弛部分Sb之狀態下從張力消除機構92被搬出。該基板S經由導引滾筒R9往處理室13搬送。 After the slack portion Sb is formed, the transfer speeds of the direction conversion rollers 94a and 94b to the substrate S by the nip rollers 95a and 95b are made equal. With this operation, the substrate S is carried out from the strain relief mechanism 92 in a state where the slack portion Sb is formed. The substrate S is transferred to the processing chamber 13 via a guide roller R9.

從處理室12側經由基板S而傳達之振動,係於基板S之鬆弛部分Sb除去振動。因此,抑制振動經由基板S傳達至處理室13。此外,當於方向轉換滾筒94a設有溫度調整機構94c之情形,係在該方向轉換滾筒94a進行基板S之溫度調整。此處係調整成例如適於曝光處理之溫度。 The vibration transmitted from the processing chamber 12 side through the substrate S is removed from the slack portion Sb of the substrate S. Therefore, transmission of vibration to the processing chamber 13 via the substrate S is suppressed. In addition, when a temperature adjustment mechanism 94c is provided in the direction conversion drum 94a, the temperature of the substrate S is adjusted in the direction conversion drum 94a. Here, it is adjusted to the temperature suitable for exposure processing, for example.

往處理室13搬入之基板S被導引滾筒R10及R11搬送。藉由曝光裝 置EX對該基板S進行曝光處理。藉由曝光處理,形成於基板S之被處理面Sa之塗布膜中之既定區域係感光。在曝光處理結束之基板S插入開口部90後,經由導引滾筒R12搬入張力消除機構93。 The substrate S carried into the processing chamber 13 is carried by the guide rollers R10 and R11. This substrate S is subjected to exposure processing by an exposure device EX. By the exposure process, a predetermined area in the coating film formed on the processed surface Sa of the substrate S is photosensitive. After the substrate S having completed the exposure process is inserted into the opening portion 90, it is carried into the strain relief mechanism 93 via the guide roller R12.

在張力消除機構93,係與上述之張力消除機構92同樣地於基板S形成鬆弛部分Sb。因此,從處理室12側經由基板S而傳達之振動,係於基板S之鬆弛部分Sb除去振動。另一方面,如前述,在張力消除機構92亦形成有鬆弛部分Sb,因此,基板S中配置於處理室13之部分,成為在張力消除機構92及張力消除機構93兩者被除去來自處理室12之振動傳達之狀態。 The tension relief mechanism 93 forms a slack portion Sb on the substrate S in the same manner as the tension relief mechanism 92 described above. Therefore, the vibration transmitted from the processing chamber 12 side through the substrate S is removed from the slack portion Sb of the substrate S. On the other hand, as described above, the slack portion Sb is also formed in the tension relief mechanism 92. Therefore, the portion of the substrate S disposed in the processing chamber 13 is removed from the processing chamber by the tension relief mechanism 92 and the tension relief mechanism 93 The state of the 12 vibration.

若導引滾筒R8~R13或加熱裝置51、52等之振動傳達至基板S,則會有基板S或其他部位在曝光裝置EX之曝光用光照射位置振動之情形,而有可能使曝光精度降低。因此,藉由使用振動除去裝置91除去在橫跨曝光裝置EX之部分之基板S之振動,來抑制曝光精度之降低。 If the vibrations of the guide rollers R8 to R13 or the heating devices 51 and 52 are transmitted to the substrate S, the substrate S or other parts may vibrate at the exposure light irradiation position of the exposure device EX, and the exposure accuracy may be reduced. . Therefore, the vibration of the substrate S across the exposure device EX is removed by using the vibration removal device 91 to suppress a decrease in exposure accuracy.

從處理室13往處理室12搬送之基板S,經由導引滾筒R14、R15及R16搬入加熱裝置52。在加熱裝置52,進行對已感光之塗布膜之加熱處理。在進行加熱處理後,從加熱裝置52搬出之基板S經由導引滾筒R17插入連接部16,經由連接部16往處理室11搬送。 The substrate S transferred from the processing chamber 13 to the processing chamber 12 is carried into the heating device 52 via the guide rollers R14, R15, and R16. In the heating device 52, heat treatment is performed on the photosensitive coating film. After the heat treatment is performed, the substrate S carried out from the heating device 52 is inserted into the connection portion 16 through the guide roller R17, and is transferred to the processing chamber 11 through the connection portion 16.

搬送至處理室11之基板S經由導引滾筒R18及R19搬入顯影裝置42。在顯影裝置42,基板S係一邊被浸於顯影液一邊被導引滾筒R20搬送,而在搬送之過程中進行顯影處理。已被進行顯影處理之基板S被導引滾筒R21從顯影裝置42搬出,經由導引滾筒R22及R23往洗淨裝置43搬入。 The substrate S transferred to the processing chamber 11 is carried into the developing device 42 via the guide rollers R18 and R19. In the developing device 42, the substrate S is conveyed by the guide roller R20 while being immersed in the developer, and the developing process is performed during the conveyance. The substrate S that has undergone the development processing is carried out from the developing device 42 by the guide roller R21, and is carried into the cleaning device 43 through the guide rollers R22 and R23.

在洗淨裝置43,基板S係一邊被浸於顯影液一邊被導引滾筒R24搬送,而在搬送之過程中進行洗淨處理。已被進行洗淨處理之基板S被導引滾筒R25從洗淨裝置43搬出後,經由連接部17往處理室12搬入。 In the cleaning device 43, the substrate S is conveyed by the guide roller R24 while being immersed in the developer, and the cleaning process is performed during the conveyance. The substrate S that has undergone the cleaning process is carried out from the cleaning device 43 by the guide roller R25 and then carried into the processing chamber 12 through the connection portion 17.

搬送至處理室12之基板S經由導引滾筒R26搬入加熱裝置53。在 加熱裝置53,進行用以使已洗淨之基板S乾燥之加熱處理或用以加熱塗布膜之加熱處理等。進行該加熱處理後,從加熱裝置53搬出之基板S藉由導引滾筒R27之導引經由連接部18往處理室11搬送。 The substrate S transferred to the processing chamber 12 is carried into the heating device 53 via the guide roller R26. The heating device 53 performs a heat treatment for drying the cleaned substrate S or a heat treatment for heating the coating film. After performing this heat treatment, the substrate S carried out from the heating device 53 is conveyed to the processing chamber 11 through the connection portion 18 by the guide of the guide roller R27.

搬送至處理室11之基板S被搬入鍍敷裝置44。在鍍敷裝置44,基板S係一邊被浸於鍍敷液一邊被導引滾筒R28搬送,而在搬送之過程中進行鍍敷處理。於已被進行鍍敷處理之基板S形成既定圖案。鍍敷處理後之基板S被導引滾筒R29從鍍敷裝置44搬出,經由連接部19往處理室12搬送。在處理室12,經由導引滾筒R30搬入未圖示之加熱裝置,而進行加熱處理。 The substrate S transferred to the processing chamber 11 is carried into a plating apparatus 44. In the plating apparatus 44, the substrate S is conveyed by the guide roller R28 while being immersed in the plating solution, and the plating process is performed during the conveyance. A predetermined pattern is formed on the substrate S that has been subjected to a plating process. The substrate S after the plating process is carried out from the plating apparatus 44 by the guide roller R29, and is transferred to the processing chamber 12 through the connection portion 19. In the processing chamber 12, a heating device (not shown) is carried in via a guide roller R30, and heat processing is performed.

如以上所述,根據本實施形態,係配置對基板S分別進行不同種類之處理之處理部3且將此處理部3中具有彼此共通之處理步驟(共通次程序)之處理部3配置於相同處理室內。進而,由於具備搬送裝置20,該搬送裝置20能以基板S橫跨各處理室11~13內被搬送之方式且基板S對各個處理室11~13進出複數次之方式搬送基板S,因此能有效率地利用基板處理部3之空間。 As described above, according to the present embodiment, the processing sections 3 that respectively perform different types of processing on the substrate S are disposed, and the processing sections 3 having common processing steps (common subroutines) among the processing sections 3 are arranged at the same Processing room. Furthermore, since the transfer device 20 is provided, the transfer device 20 can transfer the substrate S in such a manner that the substrate S is transferred across the processing chambers 11 to 13 and the substrate S is moved in and out of the processing chambers 11 to 13 a plurality of times. The space of the substrate processing section 3 is efficiently used.

例如,如本實施形態所示,在形成顯示元件之構成要素時,由於會頻繁地進行加熱處理,因此會設有多數台加熱裝置。在如本實施形態所示使加熱裝置彙整配置於一個處理室12時,能有效率地利用熱能。又,由於係使配置加熱裝置之處理室12配置於Z方向之中央階層,隔著該處理室12配置處理室11(濕式處理)及處理室13(曝光處理)之構成,因此為易進出加熱裝置之構成。因此,能使裝置整體之基板S之搬送路徑縮短。又,在處理室12,由於加熱裝置以於X方向及Y方向重疊之方式排列配置有複數個,因此能節約處理室12之空間。因此,能抑制為了設置基板處理裝置100所需要之設置地面積。 For example, as shown in this embodiment, when forming the constituent elements of the display element, since the heat treatment is frequently performed, a plurality of heating devices are provided. When the heating device is collectively arranged in one processing chamber 12 as shown in this embodiment, thermal energy can be efficiently used. In addition, since the processing chamber 12 in which the heating device is arranged is arranged at the center level in the Z direction, and the processing chamber 11 (wet processing) and the processing chamber 13 (exposure processing) are arranged across the processing chamber 12, it is easy to enter The structure of the heating device. Therefore, the conveyance path of the substrate S in the entire device can be shortened. In addition, since a plurality of heating devices are arranged in the processing chamber 12 so as to overlap in the X and Y directions, the space of the processing chamber 12 can be saved. Therefore, it is possible to suppress the installation floor area required for installing the substrate processing apparatus 100.

又,圖2中,作為處理裝置10,雖以塗布裝置、加熱裝置、曝光裝置、顯影裝置、洗淨裝置、鍍敷裝置之組合為例進行了說明。但並不限定於此組合。又,亦可使此處理裝置10於X方向或Y方向配置複數個。亦即,經由導 引滾筒R30使基板S搬送至其他處理裝置10之塗布裝置,藉由反覆進行上述之動作,於基板S依序形成顯示元件之構成要素。此情形下,在配置複數個處理裝置10時,亦可使複數個曝光裝置EX之曝光精度或解析度互異。 In FIG. 2, as the processing device 10, a combination of a coating device, a heating device, an exposure device, a developing device, a cleaning device, and a plating device is described as an example. But it is not limited to this combination. In addition, a plurality of the processing devices 10 may be arranged in the X direction or the Y direction. That is, the substrate S is transported to the coating device of the other processing device 10 via the guide roller R30, and the above-mentioned operations are repeatedly performed to sequentially form the constituent elements of the display element on the substrate S. In this case, when the plurality of processing devices 10 are arranged, the exposure accuracy or resolution of the plurality of exposure devices EX may be made different from each other.

在將此處理裝置10於Y方向配置複數個時,如上述,能使用如圖5所示之複數個加熱單元50、亦即將相鄰之加熱單元50連結之構成。 When a plurality of the processing devices 10 are arranged in the Y direction, as described above, a configuration in which a plurality of heating units 50 shown in FIG. 5, that is, adjacent heating units 50 are connected can be used.

本發明之技術範圍並不限於上述實施形態,在不脫離本發明之趣旨之範圍內可施加適當變更。 The technical scope of the present invention is not limited to the embodiments described above, and appropriate changes can be made without departing from the scope of the present invention.

例如,上述實施形態中,雖使用如圖8所示之張力消除機構92及93之構成作為振動除去裝置91之構成,但並不限於此。作為振動除去裝置91,亦可為例如分別示於圖9~圖11之構成。 For example, in the above-mentioned embodiment, although the configuration of the tension removing mechanisms 92 and 93 shown in FIG. 8 is used as the configuration of the vibration removing device 91, it is not limited to this. The vibration removing device 91 may have a configuration shown in, for example, FIGS. 9 to 11.

圖9係顯示作為振動除去裝置91之張力消除機構92及93之其他構成例之振動吸收機構192及193。 FIG. 9 shows vibration absorbing mechanisms 192 and 193 as other configuration examples of the tension removing mechanisms 92 and 93 of the vibration removing device 91.

振動吸收機構192及193具有方向轉換滾筒194a及194b(方向轉換部194)與振動吸收部196。 The vibration absorption mechanisms 192 and 193 include direction conversion rollers 194 a and 194 b (direction conversion portion 194) and a vibration absorption portion 196.

振動吸收部196具有滾筒196a、滾筒支承部196b、彈簧構件196c、以及壁部196d。 The vibration absorbing portion 196 includes a drum 196a, a drum supporting portion 196b, a spring member 196c, and a wall portion 196d.

滾筒196a配置於方向轉換滾筒194a與方向轉換滾筒194b之間。於此滾筒196a掛有基板S中被方向轉換之一部分Sc。滾筒196a透過滾筒支承部196b及彈簧構件196c安裝於壁部196d。因此,基板S之振動係在該一部分Sc被滾筒196a及彈簧構件196c吸收。 The drum 196a is disposed between the direction changing drum 194a and the direction changing drum 194b. A part Sc of the substrate S which has been changed in direction is hung on the drum 196a. The roller 196a is attached to the wall portion 196d through the roller support portion 196b and the spring member 196c. Therefore, the vibration of the substrate S is absorbed by the roller 196a and the spring member 196c in this part Sc.

圖10係顯示作為振動除去裝置91之張力消除機構92及93之其他構成例之振動吸收機構292及293。 FIG. 10 shows vibration absorbing mechanisms 292 and 293 as other configuration examples of the tension removing mechanisms 92 and 93 of the vibration removing device 91.

振動吸收機構292及293具有方向轉換滾筒294a及294b(方向轉換部294)與振動吸收部297。振動吸收部297具有滾筒297a、形成於該滾筒297a之圓 筒面之振動吸收層297b。 The vibration absorption mechanisms 292 and 293 include direction conversion rollers 294 a and 294 b (direction conversion portion 294) and a vibration absorption portion 297. The vibration absorbing portion 297 includes a roller 297a and a vibration absorbing layer 297b formed on a cylindrical surface of the roller 297a.

滾筒297a配置於方向轉換滾筒294a與方向轉換滾筒294b之間。於此滾筒297a掛有基板S中被方向轉換之一部分Sc。振動吸收層297b係使用例如SORBOTHANE等振動吸收性材料。圖10所示之構成中,由於係藉由形成於滾筒297a之振動吸收層297b吸收基板S之振動,因此能以簡單之構成達成。 The drum 297a is disposed between the direction conversion drum 294a and the direction conversion drum 294b. Here, a part Sc of the substrate S which is changed in direction is hung on the drum 297a. As the vibration absorbing layer 297b, a vibration absorbing material such as SORBOTHANE is used. In the configuration shown in FIG. 10, since the vibration of the substrate S is absorbed by the vibration absorbing layer 297b formed on the drum 297a, it can be achieved with a simple configuration.

圖11係顯示作為振動除去裝置91之張力消除機構92及93之其他構成例之振動賦予機構392及393。 FIG. 11 shows vibration applying mechanisms 392 and 393 as other configuration examples of the tension removing mechanisms 92 and 93 of the vibration removing device 91.

振動賦予機構392及393具有方向轉換滾筒394a及394b(方向轉換部394)與振動產生部398。振動產生部398具有滾筒398a、使該滾筒398a振動之振動調整部398b、以及檢測出基板S中在滾筒398a下游側之位置之振動之感測器398c。 The vibration applying mechanisms 392 and 393 include direction conversion rollers 394a and 394b (direction conversion section 394) and a vibration generating section 398. The vibration generating unit 398 includes a drum 398a, a vibration adjustment unit 398b that vibrates the drum 398a, and a sensor 398c that detects a vibration of the substrate S at a position downstream of the drum 398a.

滾筒398a配置於方向轉換滾筒394a與方向轉換滾筒394b之間。於此滾筒398a掛有基板S中被方向轉換之一部分Sc。振動調整部398b係根據感測器398c之檢測結果使抵消基板S振動之振動產生。因此,圖11所示之構成中,藉由在滾筒398a抵消基板S之振動,而能抑制基板S之振動之傳達。 The drum 398a is disposed between the direction changing drum 394a and the direction changing drum 394b. A part Sc of the substrate S which is changed in direction is hung on the drum 398a. The vibration adjustment unit 398b generates a vibration that cancels the vibration of the substrate S based on the detection result of the sensor 398c. Therefore, in the configuration shown in FIG. 11, the transmission of the vibration of the substrate S can be suppressed by cancelling the vibration of the substrate S by the drum 398 a.

此外,亦可如圖12所示,例如在上述張力消除機構92之構成中,方向轉換滾筒94a與夾持滾筒95a配置於處理室12,方向轉換滾筒94b與夾持滾筒95b配置於處理室13,在上述張力消除機構93之構成中,方向轉換滾筒94a與夾持滾筒95a配置於處理室13,方向轉換滾筒94b與夾持滾筒95b配置於處理室12。 In addition, as shown in FIG. 12, for example, in the configuration of the strain relief mechanism 92 described above, the direction changing drum 94 a and the clamping drum 95 a are disposed in the processing chamber 12, and the direction changing drum 94 b and the clamping drum 95 b are disposed in the processing chamber 13. In the structure of the tension relief mechanism 93 described above, the direction conversion drum 94a and the clamping drum 95a are disposed in the processing chamber 13, and the direction conversion drum 94b and the clamping drum 95b are disposed in the processing chamber 12.

同樣地,亦可係在圖9所示之振動吸收機構192之構成中,例如方向轉換滾筒194a與滾筒196a配置於處理室12,方向轉換滾筒194b配置於處理室13,在振動吸收機構193之構成中,方向轉換滾筒194a配置於處理室13,滾筒196a與方向轉換滾筒194b配置於處理室12。又,作為壁部196d亦可使用例如分隔構件14b等。 Similarly, the vibration absorption mechanism 192 shown in FIG. 9 may be used. For example, the direction conversion roller 194a and the roller 196a are disposed in the processing chamber 12, and the direction conversion roller 194b is disposed in the processing chamber 13. In the configuration, the direction conversion drum 194 a is disposed in the processing chamber 13, and the roller 196 a and the direction conversion drum 194 b are disposed in the processing chamber 12. As the wall portion 196d, for example, a partition member 14b or the like can be used.

又,亦可係在圖10所示之振動吸收機構292之構成中,例如方向轉換滾筒294a與滾筒297a配置於處理室12,方向轉換滾筒294b配置於處理室13,在振動吸收機構293之構成中,方向轉換滾筒294a配置於處理室13,滾筒297a與方向轉換滾筒294b配置於處理室12。 It is also possible to adopt the configuration of the vibration absorbing mechanism 292 shown in FIG. 10, for example, the direction conversion roller 294a and the roller 297a are disposed in the processing chamber 12, the direction conversion roller 294b is disposed in the processing chamber 13, and the vibration absorption mechanism 293 is configured. Among them, the direction conversion drum 294a is disposed in the processing chamber 13, and the drum 297a and the direction conversion drum 294b are disposed in the processing chamber 12.

進而,亦可係在圖11所示之振動賦予機構392之構成中,例如方向轉換滾筒394a與滾筒398a配置於處理室12,方向轉換滾筒394b配置於處理室13,在振動吸收機構393之構成中,方向轉換滾筒394a配置於處理室13,滾筒398a與方向轉換滾筒394b配置於處理室12。 Further, it may be in the configuration of the vibration imparting mechanism 392 shown in FIG. 11, for example, the direction conversion roller 394 a and the roller 398 a are disposed in the processing chamber 12, the direction conversion roller 394 b is disposed in the processing chamber 13, and the vibration absorption mechanism 393 is configured. Among them, the direction conversion drum 394 a is disposed in the processing chamber 13, and the roller 398 a and the direction conversion drum 394 b are disposed in the processing chamber 12.

又,亦可係在圖8所示之張力消除機構92及93之構成中,方向轉換滾筒94a及夾持滾筒95a與方向轉換滾筒94b及夾持滾筒95b配置於處理室12及處理室13中至少一方之構成。於圖13顯示方向轉換滾筒94a及94b與夾持滾筒95a及95b配置於處理室13之構成。 In addition, in the configuration of the tension relief mechanisms 92 and 93 shown in FIG. 8, the direction conversion drum 94 a and the clamping drum 95 a and the direction conversion drum 94 b and the clamping drum 95 b may be disposed in the processing chamber 12 and the processing chamber 13. Composition of at least one party. FIG. 13 shows a configuration in which the direction change rollers 94 a and 94 b and the nip rollers 95 a and 95 b are disposed in the processing chamber 13.

又,上述實施形態中,雖舉於處理室12與處理室13之間設有振動除去裝置91之構成為例進行了說明,但並不限於此。 Moreover, in the said embodiment, although the structure provided with the vibration removal apparatus 91 between the processing chamber 12 and the processing chamber 13 was demonstrated as an example, it is not limited to this.

例如,亦可係於處理室12與處理室13之間,除了振動除去裝置91以外,如圖14所示設有抑制異物之移動之異物移動抑制裝置84或限制氣體及液體之流體移動限制裝置85、調整基板S之調溫裝置(基板調溫部)86等之構成。 For example, it may be connected between the processing chamber 12 and the processing chamber 13. In addition to the vibration removing device 91, as shown in FIG. 14, a foreign body movement suppressing device 84 for suppressing the movement of a foreign body or a fluid movement limiting device for restricting gas and liquid may be provided. 85. The temperature adjustment device (substrate temperature adjustment unit) 86 for adjusting the substrate S is configured.

圖14中,從基板S之搬送方向上游側往下游側依序配置有異物移動抑制裝置84、流體移動限制裝置85、調溫裝置86及振動除去裝置91。又,上述之振動除去裝置91、異物移動抑制裝置84、流體移動限制裝置85、調溫裝置86之至少一個亦可配置於處理室12與處理室13之間。 In FIG. 14, a foreign matter movement suppression device 84, a fluid movement restriction device 85, a temperature adjustment device 86, and a vibration removal device 91 are sequentially arranged from the upstream side to the downstream side in the conveying direction of the substrate S. In addition, at least one of the vibration removing device 91, the foreign matter movement suppressing device 84, the fluid movement restricting device 85, and the temperature adjustment device 86 may be disposed between the processing chamber 12 and the processing chamber 13.

異物移動抑制裝置84具有氣簾形成部84a及載台84b。異物移動抑制裝置84藉由氣簾形成部84a對被載台84b支承之基板S形成氣簾。藉由該氣簾除去基板S上之異物。 The foreign body movement suppression device 84 includes an air curtain forming portion 84 a and a stage 84 b. The foreign matter movement suppressing device 84 forms an air curtain on the substrate S supported by the stage 84b via the air curtain forming portion 84a. The foreign matter on the substrate S is removed by the air curtain.

又,流體移動限制裝置85具有上游側滾筒85a、下游側滾筒85b及氣體噴射部85c。圖15係顯示流體移動限制裝置85之構成之俯視圖。如圖14及圖15所示,流體移動限制裝置85係對在被掛於上游側滾筒85a與下游側滾筒85b之狀態下搬送之基板S從氣體噴射部85c噴射氣體。 The fluid movement restricting device 85 includes an upstream drum 85a, a downstream drum 85b, and a gas injection unit 85c. FIG. 15 is a plan view showing the structure of the fluid movement restricting device 85. As shown in FIGS. 14 and 15, the fluid movement restricting device 85 ejects gas from the gas ejection unit 85 c to the substrate S that is transported while being hung on the upstream drum 85 a and the downstream drum 85 b.

氣體噴射部85c例如相對對被掛於上游側滾筒85a與下游側滾筒85b之狀態之基板S配置於-Y側之位置、+X側之位置及-Y方向與+X方向間之位置之至少1個位置。藉由對基板S噴射氣體,能藉由該氣體除去附著於基板S表面之液體或飄蕩於基板表面之氣體。 The gas ejection unit 85c is, for example, disposed at least at a position on the -Y side, a position on the + X side, and a position between the -Y direction and the + X direction with respect to the substrate S hung on the upstream roller 85a and the downstream roller 85b. 1 position. By spraying a gas on the substrate S, a liquid adhering to the surface of the substrate S or a gas floating on the surface of the substrate can be removed by the gas.

又,如圖14所示,調溫裝置86進行已除去流體之基板S之溫度調整。調溫裝置86具有滾筒86a及調溫機構86b。上述實施形態中,雖舉於方向轉換滾筒94a設有溫度調整機構94c之構成為例進行了說明,但係能與其另外地調整基板S之溫度。 As shown in FIG. 14, the temperature adjustment device 86 adjusts the temperature of the substrate S from which the fluid has been removed. The temperature adjustment device 86 includes a drum 86a and a temperature adjustment mechanism 86b. In the above-mentioned embodiment, although the structure provided with the temperature adjustment mechanism 94c in the direction conversion drum 94a was demonstrated as an example, it can adjust the temperature of the board | substrate S separately.

此外,異物移動抑制裝置84、流體移動限制裝置85、調溫裝置86、振動除去裝置91之各個不限於配置於處理室12與處理室13之間之構成,亦可係配置於處理室11與處理室12之間之構成。 In addition, each of the foreign body movement suppressing device 84, the fluid movement restricting device 85, the temperature adjusting device 86, and the vibration removing device 91 is not limited to a configuration arranged between the processing chamber 12 and the processing chamber 13, and may be arranged between the processing chamber 11 and The structure between the processing chambers 12.

又,上述實施形態中,雖舉將處理室11~13於Z方向階層配置之構成為例進行了說明,但並不限於此。例如,亦可係將處理室11~13於X方向或Y方向排列配置之構成。又,在處理室11~13分別形成為獨立之裝置或工廠時,亦能適用本發明。 Moreover, in the said embodiment, although the structure which arrange | positioned the processing chambers 11-13 in the Z direction as an example was demonstrated, it is not limited to this. For example, a configuration may be adopted in which the processing chambers 11 to 13 are arranged in the X direction or the Y direction. The present invention can also be applied when the processing chambers 11 to 13 are formed as separate devices or factories.

又,上述實施形態中,雖係以基板S之被處理面Sa朝向垂直於重力方向之方向(與XY平面平行之方向)搬送基板S之構成,但並不限於此,亦可係在基板S之被處理面Sa朝向平行於重力方向之方向之狀態(使基板S立起之狀態)下搬送基板S之構成。此情形下,張力消除機構92及93中使基板S彎曲向重力方向時,能為使基板S之被處理面Sa局部地朝向垂直於重力方向之方向之構成。 In the above embodiment, the substrate S is configured to transport the substrate S with the processed surface Sa of the substrate S in a direction perpendicular to the direction of gravity (a direction parallel to the XY plane). A structure in which the substrate S is transported in a state where the processed surface Sa faces a direction parallel to the direction of gravity (a state in which the substrate S is raised). In this case, when the substrate S is bent in the direction of gravity in the strain relief mechanisms 92 and 93, it can be configured such that the processing surface Sa of the substrate S partially faces the direction perpendicular to the direction of gravity.

又,圖2中,作為處理裝置10,雖以塗布裝置、加熱裝置、曝光裝置、顯影裝置、洗淨裝置、鍍敷裝置之組合為例進行了說明。但並不限定於此組合。又,亦可使此處理裝置10於X方向或Y方向配置複數個。亦即,經由導引滾筒R30使基板S搬送至其他處理裝置10之塗布裝置,藉由反覆進行上述之動作,於基板S依序形成顯示元件之構成要素。此情形下,在配置複數個處理裝置10時,亦可使複數個曝光裝置EX之曝光精度或解析度互異。在將此處理裝置10於Y方向配置複數個時,如上述,能使用如圖5所示之複數個加熱單元50、亦即將相鄰之加熱單元50連結之構成。 In FIG. 2, as the processing device 10, a combination of a coating device, a heating device, an exposure device, a developing device, a cleaning device, and a plating device is described as an example. But it is not limited to this combination. In addition, a plurality of the processing devices 10 may be arranged in the X direction or the Y direction. That is, the substrate S is transported to the coating apparatus of the other processing apparatus 10 through the guide roller R30, and the above-mentioned operations are repeated to form the constituent elements of the display element in sequence on the substrate S. In this case, when the plurality of processing devices 10 are arranged, the exposure accuracy or resolution of the plurality of exposure devices EX may be made different from each other. When a plurality of the processing devices 10 are arranged in the Y direction, as described above, a configuration in which a plurality of heating units 50 shown in FIG. 5, that is, adjacent heating units 50 are connected can be used.

本實施形態中,亦可為將處理室11~13之室內壓力分別獨立調整之構成。 In this embodiment, it is also possible to have a configuration in which the indoor pressures of the processing chambers 11 to 13 are independently adjusted.

例如,最好係將處理室13之室內壓力調整成較處理室12之室內壓力高,以防附著於光學系表面之異物(微粒)從其他處理室、例如處理室12侵入收容曝光裝置EX之處理室13。又,在處理室11由於使用複數個液體,因此最好係將處理室13之室內壓力調整成較處理室12之室內壓力高,以防此等液體侵入處理室12內。 For example, it is preferable to adjust the pressure in the processing chamber 13 to be higher than the pressure in the processing chamber 12 to prevent foreign matter (particles) adhering to the surface of the optical system from entering into the processing chamber 12 that contains the exposure device EX. Processing chamber 13. In addition, since a plurality of liquids are used in the processing chamber 11, it is desirable to adjust the pressure in the processing chamber 13 to be higher than the pressure in the processing chamber 12 to prevent these liquids from entering the processing chamber 12.

又,3個處理室之壓力,亦可為3個處理室中使處理室13之壓力為最高,使處理室11之壓力為最低,將處理室12設定為處理室13與處理室11間之壓力。 In addition, the pressure of the three processing chambers may be such that the pressure of the processing chamber 13 is the highest and the pressure of the processing chamber 11 is the lowest. The processing chamber 12 is set to be between the processing chamber 13 and the processing chamber 11 pressure.

Claims (7)

一種圖案形成方法,其係藉由將具有可撓性之帶狀基板於長邊方向上搬送至曝光裝置並進行處理後,搬送至濕式處理裝置而於上述基板上形成電子元件之圖案,上述曝光裝置係設置於以分隔構件分隔之第1處理室內,上述濕式處理裝置係設置於相對於上述第1處理室而位於重力方向之下側之第2處理室內,其包含:曝光步驟,通過設置於上述第1處理室內之分隔構件之開口部,將塗布有感光劑之上述基板於長邊方向搬入上述曝光裝置,於上述基板之由上述感光劑形成之塗布膜曝光電子元件之圖案;以及處理步驟,通過設置於在重力方向分隔上述第1處理室與第2處理室之間之分隔構件之連接部,將以上述曝光裝置曝光後之上述基板於長邊方向搬送至上述濕式處理裝置,藉由液體對上述塗布膜進行處理。     A pattern forming method for forming a pattern of an electronic component on a substrate by transporting a strip substrate having flexibility in a long-side direction to an exposure device for processing, and then transporting the belt-shaped substrate to a wet processing device. The exposure device is installed in a first processing chamber partitioned by a partition member, and the wet processing device is provided in a second processing chamber located below the gravity direction with respect to the first processing chamber, and includes an exposure step. The opening of the partition member provided in the first processing chamber, the substrate coated with the photosensitive agent is carried into the exposure device in the long side direction, and the pattern of the electronic component is exposed on the substrate with a coating film formed of the photosensitive agent; and In the processing step, the substrates exposed by the exposure device are transported to the wet processing device in a long side direction by a connection portion of a partition member provided between the first processing chamber and the second processing chamber in a gravity direction. The above-mentioned coating film is processed by a liquid.     如請求項1所述之圖案形成方法,其中,設置於上述第2處理室之上述濕式處理裝置包含:塗布裝置,其於以上述曝光裝置進行曝光處理前之上述基板之表面形成上述塗布膜;以及顯影裝置,其藉由顯影液對以上述曝光裝置曝光後之上述基板之上述塗布膜進行處理。     The pattern forming method according to claim 1, wherein the wet processing device provided in the second processing chamber includes a coating device that forms the coating film on a surface of the substrate before the exposure processing is performed by the exposure device. And a developing device that processes the coating film of the substrate after exposure by the exposure device with a developing solution.     如請求項2所述之圖案形成方法,其中,藉由用於在長邊方向搬送上述基板之複數個滾筒所構成之搬送部,以上述第2處理室內之上述塗布裝置、上述第1處理室內之上述曝光裝置、及上述第2處理室內之上述顯影裝置之順序搬送上述基板。     The pattern forming method according to claim 2, wherein the transporting unit constituted by a plurality of rollers for transporting the substrate in the longitudinal direction is configured by the coating device and the first processing chamber in the second processing chamber. The substrates are transported in this order by the exposure device and the developing device in the second processing chamber.     如請求項3所述之圖案形成方法,其中, 為了將上述基板搬送於上述第1處理室與上述第2處理室之間,上述搬送部包含分別設置於上述第1處理室側及上述第2處理室側之將上述基板於重力方向翻折之滾筒。     The pattern forming method according to claim 3, wherein in order to transfer the substrate between the first processing chamber and the second processing chamber, the transfer unit includes a first processing chamber and a second processing chamber, A roller on the processing chamber side that folds the substrate in the direction of gravity.     如請求項1至4中任一項所述之圖案形成方法,其中,於上述第2處理室設置回收在上述濕式處理裝置產生之廢棄物之回收部。     The pattern forming method according to any one of claims 1 to 4, wherein a recovery unit for recovering waste generated in the wet processing apparatus is provided in the second processing chamber.     如請求項1至4中任一項所述之圖案形成方法,其中,將上述第1處理室之壓力設為較上述第2處理室之壓力高。     The pattern forming method according to any one of claims 1 to 4, wherein the pressure in the first processing chamber is set higher than the pressure in the second processing chamber.     如請求項3所述之圖案形成方法,其中,上述基板係以通過於重力方向上設置於上述第1處理室與上述第2處理室之間之第3處理室之方式藉由上述搬送部之複數個滾筒搬送;將藉由於上述塗布裝置之處理而塗布於上述基板之上述塗布膜、或藉由於上述顯影裝置之處理而附著於上述基板之液體在上述基板通過上述第3處理室之期間乾燥或去除。     The pattern forming method according to claim 3, wherein the substrate is passed through the third processing chamber provided in the direction of gravity between the first processing chamber and the second processing chamber through the third processing chamber. A plurality of rollers are transported; the coating film coated on the substrate by the processing of the coating device, or the liquid adhered to the substrate by the processing of the developing device is dried while the substrate passes through the third processing chamber Or remove.    
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TW201243983A (en) 2012-11-01
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JP2016174164A (en) 2016-09-29
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CN103380483B (en) 2016-11-02
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TWI587428B (en) 2017-06-11
JP2017188696A (en) 2017-10-12
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