TW201630102A - Substrate processing apparatus and device manufacturing method - Google Patents

Substrate processing apparatus and device manufacturing method Download PDF

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TW201630102A
TW201630102A TW105113423A TW105113423A TW201630102A TW 201630102 A TW201630102 A TW 201630102A TW 105113423 A TW105113423 A TW 105113423A TW 105113423 A TW105113423 A TW 105113423A TW 201630102 A TW201630102 A TW 201630102A
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substrate
processing chamber
processing
chamber
exposure
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TW105113423A
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TWI587428B (en
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鈴木智也
西川仁
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尼康股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Materials For Photolithography (AREA)
  • Optical Filters (AREA)
  • Advancing Webs (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Coating Apparatus (AREA)
  • Liquid Crystal (AREA)

Abstract

A substrate processing apparatus includes: a plurality of processing portions which respectively perform a processing to a band-like shape substrate; a first processing chamber that accommodates a first processing portion which can execute a common sub-process in the plurality of the processing portions; a second processing chamber that accommodates a second processing portion out of the plurality of the processing portions; a feed portion that feeds the substrate to each of the first processing chamber and the second processing chamber.

Description

基板處理裝置及元件製造方法 Substrate processing apparatus and component manufacturing method

本發明係關於基板處理裝置。 The present invention relates to a substrate processing apparatus.

本申請係根據2011年4月25日申請之日本特願2011-097122號主張優先權,並將其內容援引於此。 Priority is claimed on Japanese Patent Application No. 2011-097122, filed on Apr. 25, 2011, the content of which is hereby incorporated herein.

作為構成顯示器裝置等顯示裝置之顯示元件,例如有液晶顯示元件、有機電致發光(有機EL)元件等。目前,此等顯示元件係以對應各畫素在基板表面形成被稱為薄膜電晶體(Thin Film Transistor:TFT)之主動元件(Active device)漸為主流。 Examples of the display element constituting the display device such as a display device include a liquid crystal display element, an organic electroluminescence (organic EL) element, and the like. At present, these display elements are becoming mainstream with the formation of an active device called a Thin Film Transistor (TFT) on the surface of the substrate corresponding to each pixel.

近年來,提出了一種在片狀之基板(例如薄膜構件等)上形成顯示元件之技術。作為此種技術,例如有一種被稱為捲軸對捲軸(roll to roll)方式(以下,簡記為「捲軸方式」)之手法廣為人知(例如,參照專利文獻1)。捲軸方式,係將捲繞在基板供應側之供應用滾筒之1片片狀基板(例如,帶狀之薄膜構件)送出且一邊將送出之基板以基板回收側之回收用滾筒加以捲取,一邊藉由設置於供應用滾筒與回收用滾筒間之處理部(單元)對基板施以所欲加工者。 In recent years, a technique of forming a display element on a sheet-like substrate (for example, a film member or the like) has been proposed. As such a technique, for example, a method called a roll to roll method (hereinafter, abbreviated as "reel method") is widely known (for example, refer to Patent Document 1). In the reel method, one sheet-like substrate (for example, a strip-shaped film member) wound around a supply roller on the substrate supply side is fed, and the substrate to be fed is taken up by the recovery roller on the substrate recovery side. The substrate is applied to the substrate by a processing unit (unit) provided between the supply roller and the recovery roller.

又,在基板送出至被捲取為止之期間,例如一邊使用複數個搬送滾筒等搬送基板、一邊使用複數個處理部來形成構成TFT之閘極電極、閘極絕緣膜、半導體膜、源極一汲極電極等,在基板之被處理面上依 序形成顯示元件之構成要件。 In the meantime, the gate electrode, the gate insulating film, the semiconductor film, and the source electrode constituting the TFT are formed by using a plurality of processing units while transferring the substrate using a plurality of transfer rollers or the like while the substrate is being ejected. a drain electrode, etc., on the treated surface of the substrate The sequence forms the constituent elements of the display element.

專利文獻1:國際公開第2006/100868號小冊子 Patent Document 1: International Publication No. 2006/100868

然而,上述步驟,有可能需要全長數百公尺之長搬送路徑,而例如被要求在工廠等之有限空間內有效率地配置各處理部。 However, in the above steps, a long transport path of several hundred meters in total length may be required, and for example, it is required to efficiently arrange the respective processing units in a limited space such as a factory.

本發明之態樣,其目的在於提供能有效率地配置處理部之基板處理裝置。 An aspect of the present invention is to provide a substrate processing apparatus capable of efficiently arranging a processing unit.

依據本發明之態樣,提供一種基板處理裝置,其具備:複數個處理部,對形成為帶狀之基板分別進行處理;第一處理室,收容複數個處理部中能執行共通次程序之第一處理部;第二處理室,係收容複數個處理部中之第二處理部;以及搬送部,將基板分別搬送至第一處理室及第二處理室。 According to an aspect of the present invention, a substrate processing apparatus includes: a plurality of processing units that respectively process a substrate formed into a strip shape; and a first processing chamber that accommodates a plurality of processing units capable of executing a common subroutine a processing unit; the second processing chamber is configured to receive the second processing unit of the plurality of processing units; and the transport unit to transport the substrates to the first processing chamber and the second processing chamber, respectively.

根據本發明之態樣,能有效率地利用處理部之空間。 According to the aspect of the invention, the space of the processing portion can be utilized efficiently.

3‧‧‧基板處理部(處理部) 3‧‧‧Substrate processing unit (processing unit)

10‧‧‧處理裝置 10‧‧‧Processing device

11~13‧‧‧處理室(第一處理室、第二處理室、第三處理室) 11~13‧‧‧Processing room (first processing room, second processing room, third processing room)

15~19‧‧‧連接部 15~19‧‧‧Connecting Department

20‧‧‧搬送裝置(搬送部) 20‧‧‧Transporting device (transporting unit)

41‧‧‧塗布裝置 41‧‧‧ Coating device

42‧‧‧顯影裝置 42‧‧‧Developing device

43‧‧‧洗淨裝置 43‧‧‧cleaning device

44‧‧‧鍍敷裝置 44‧‧‧ plating device

45‧‧‧廢液回收部(回收管、回收部) 45‧‧‧ Waste liquid recovery department (recycling pipe, recycling department)

51~53‧‧‧加熱裝置 51~53‧‧‧ heating device

60‧‧‧筐體 60‧‧‧ housing

61‧‧‧基板搬入口(搬入口) 61‧‧‧Substrate entrance (moving entrance)

62‧‧‧基板收容室(收容室) 62‧‧‧Substrate containment room (containment room)

63‧‧‧基板搬出口(搬出口) 63‧‧‧Substrate removal (transportation)

70‧‧‧加熱部 70‧‧‧heating department

84‧‧‧異物移動抑制裝置 84‧‧‧ Foreign object movement suppression device

85‧‧‧流體移動限制裝置 85‧‧‧Liquid movement limiting device

86‧‧‧調溫裝置(基板調溫部) 86‧‧‧temperature control device (substrate temperature adjustment unit)

91‧‧‧振動除去裝置(調整機構) 91‧‧‧Vibration removal device (adjustment mechanism)

92、93‧‧‧張力消除機構 92, 93‧‧‧Tensile Elimination Mechanism

96‧‧‧旋轉驅動部 96‧‧‧Rotary drive department

100‧‧‧基板處理裝置 100‧‧‧Substrate processing unit

192、193‧‧‧振動吸收機構 192, 193‧ ‧ vibration absorption mechanism

292、293‧‧‧振動吸收機構 292, 293‧‧ ‧ vibration absorption mechanism

392、393‧‧‧振動賦予機構 392, 393‧‧ ‧ vibration-giving institutions

S‧‧‧基板 S‧‧‧Substrate

CONT‧‧‧控制部 CONT‧‧‧Control Department

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

R(R1~R30)‧‧‧導引滾筒(導引部) R (R1~R30)‧‧‧ Guide roller (guide)

圖1係顯示本實施形態之基板處理裝置之整體構成的圖。 Fig. 1 is a view showing the overall configuration of a substrate processing apparatus of the present embodiment.

圖2係顯示本實施形態之基板處理裝置之基板處理部構成之剖面圖。 Fig. 2 is a cross-sectional view showing the configuration of a substrate processing unit of the substrate processing apparatus of the embodiment.

圖3係顯示本實施形態之加熱單元之構成之剖面圖。 Fig. 3 is a cross-sectional view showing the configuration of a heating unit of the embodiment.

圖4係顯示本實施形態之加熱單元之構成之立體圖。 Fig. 4 is a perspective view showing the configuration of the heating unit of the embodiment.

圖5係顯示本實施形態之加熱裝置之構成之立體圖。 Fig. 5 is a perspective view showing the configuration of the heating device of the embodiment.

圖6係顯示本實施形態之配置於處理室之加熱裝置之配置例之圖。 Fig. 6 is a view showing an arrangement example of a heating device disposed in a processing chamber according to the embodiment.

圖7係顯示加熱裝置之配置例之比較圖。 Fig. 7 is a comparison diagram showing a configuration example of the heating device.

圖8係顯示本實施形態之振動除去裝置之構成之側視圖。 Fig. 8 is a side view showing the configuration of the vibration removing device of the embodiment.

圖9係顯示振動除去裝置之其他構成之側視圖。 Fig. 9 is a side view showing another configuration of the vibration removing device.

圖10係顯示振動除去裝置之其他構成之側視圖。 Fig. 10 is a side view showing another configuration of the vibration removing device.

圖11係顯示振動除去裝置之其他構成之側視圖。 Fig. 11 is a side view showing another configuration of the vibration removing device.

圖12係顯示振動除去裝置之其他構成之側視圖。 Fig. 12 is a side view showing another configuration of the vibration removing device.

圖13係顯示振動除去裝置之其他構成之側視圖。 Fig. 13 is a side view showing another configuration of the vibration removing device.

圖14係顯示本實施形態之處理室彼此間之構成之圖。 Fig. 14 is a view showing the configuration of the processing chambers of the embodiment.

圖15係顯示本實施形態之流體除去裝置之構成之圖。 Fig. 15 is a view showing the configuration of the fluid removing device of the embodiment.

以下,參照圖式說明本實施形態。 Hereinafter, the present embodiment will be described with reference to the drawings.

圖1係顯示本實施形態之基板處理裝置100之構成的圖。 Fig. 1 is a view showing the configuration of a substrate processing apparatus 100 of the present embodiment.

如圖1所示,基板處理裝置100具有:供應帶狀之基板(例如片狀之薄膜構件)S之基板供應部2、對基板S之表面(被處理面)Sa進行處理之基板處理部3、回收基板S之基板回收部4、控制此等各部之控制部CONT。基板處理部3具備用以在從基板供應部2送出基板S後至藉由基板回收部4回收基板S之期間對基板S之表面執行各種處理之基板處理裝置100。此基板處理裝置100,可使用於在基板S上形成例如有機EL元件、液晶顯示元件等顯示元件(電子元件)之情形。 As shown in FIG. 1, the substrate processing apparatus 100 includes a substrate supply unit 2 that supplies a strip-shaped substrate (for example, a sheet-like film member) S, and a substrate processing unit 3 that processes the surface (processed surface) Sa of the substrate S. The substrate recovery unit 4 of the substrate S is recovered, and the control unit CONT of each of the units is controlled. The substrate processing unit 3 includes a substrate processing apparatus 100 for performing various processes on the surface of the substrate S while the substrate S is fed from the substrate supply unit 2 and after the substrate S is recovered by the substrate collection unit 4 . This substrate processing apparatus 100 can be used for forming a display element (electronic element) such as an organic EL element or a liquid crystal display element on the substrate S.

此外,本實施形態中,係如圖1所示設定XYZ正交座標系統,以下適當使用此XYZ正交座標系統來進行說明。XYZ正交座標系統,例如沿水平面設定X軸及Y軸,沿垂直方向朝上設定Z軸。又,基板處理裝置100係整體沿X軸從其負側(-側)往正側(+側)搬送基板S。此時,帶狀之基板S之寬度方向(短邊方向)設定於Y軸方向。 Further, in the present embodiment, the XYZ orthogonal coordinate system is set as shown in Fig. 1, and the XYZ orthogonal coordinate system will be appropriately described below. The XYZ orthogonal coordinate system, for example, sets the X axis and the Y axis along the horizontal plane, and sets the Z axis upward in the vertical direction. Further, the substrate processing apparatus 100 entirely transports the substrate S from the negative side (− side) to the positive side (+ side) along the X-axis. At this time, the width direction (short side direction) of the strip-shaped substrate S is set in the Y-axis direction.

作為在基板處理裝置100成為處理對象之基板S,可使用例 如樹脂膜或不鏽鋼等之箔(foil)。樹脂膜可使用例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物(Ethylene vinyl copolymer)樹脂、聚氯乙烯基樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯基樹脂等材料。 As a substrate S to be processed by the substrate processing apparatus 100, a usable example is used. A foil such as a resin film or stainless steel. As the resin film, for example, a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene vinyl copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, or the like may be used. Materials such as polycarbonate resin, polystyrene resin, and vinyl acetate resin.

基板S,以承受例如200℃程度之熱其尺寸亦實質上無變化之熱膨脹係數較小者較佳。例如可將無機填料混於樹脂膜以降低熱膨脹係數。作為無機填料,例如有氧化鈦、氧化鋅、氧化鋁、氧化矽等。 The substrate S is preferably one which is subjected to heat of, for example, about 200 ° C and whose thermal expansion coefficient is substantially unchanged. For example, an inorganic filler may be mixed in the resin film to lower the coefficient of thermal expansion. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, cerium oxide, and the like.

基板S之寬度方向(短邊方向)之尺寸係形成為例如1m~2m程度、長度方向(長邊方向)之尺寸則形成為例如10m以上。當然,此尺寸僅為一例,並不限於此。例如基板S之Y方向之尺寸為50cm以下亦可、亦可為2m以上。又,基板S之X方向之尺寸亦可在10m以下。 The dimension in the width direction (short side direction) of the substrate S is formed, for example, to about 1 m to 2 m, and the dimension in the longitudinal direction (longitudinal direction) is formed to be, for example, 10 m or more. Of course, this size is only an example and is not limited thereto. For example, the dimension of the substrate S in the Y direction may be 50 cm or less, or may be 2 m or more. Further, the dimension of the substrate S in the X direction may be 10 m or less.

基板S係形成為具有可撓性。此處,所謂可撓性,係指例如對基板施以自重程度之力亦不會斷裂或破裂、而能將該基板加以彎折之性質。又,藉由自重程度之力而彎折之性質亦包含於可撓性。又,上述可撓性會隨著該基板材質、大小、厚度、以及温度等之環境等而改變。此外,基板S可使用一片帶狀之基板、亦可使用將複數個單位基板加以連接而形成為帶狀之構成。 The substrate S is formed to have flexibility. Here, the term "flexibility" refers to a property in which the substrate can be bent without being broken or broken by applying a force to the substrate. Moreover, the property of being bent by the force of the degree of self-weight is also included in the flexibility. Further, the flexibility described above varies depending on the material, size, thickness, temperature, and the like of the substrate. Further, the substrate S may be a strip-shaped substrate, or a plurality of unit substrates may be connected to form a strip.

基板供應部2係將例如捲成捲軸狀之基板S送出供應至基板處理部3。於基板供應部2,設有用以例如捲繞基板S之軸部或使該軸部旋轉之旋轉驅動裝置等。除此之外,亦可係設置例如用以覆蓋捲成捲軸狀狀態之基板S的覆蓋部等。此外,基板供應部2不限定於送出捲成捲軸狀之基板S之機構,只要係包含將帶狀之基板S於其長度方向依序送出之機構 者即可。 The substrate supply unit 2 supplies and supplies the substrate S wound in a roll shape to the substrate processing unit 3, for example. The substrate supply unit 2 is provided with, for example, a shaft portion for winding the substrate S or a rotation driving device for rotating the shaft portion. In addition to this, for example, a cover portion or the like for covering the substrate S wound in a roll state may be provided. Further, the substrate supply unit 2 is not limited to a mechanism for feeding the substrate S wound in a reel shape, and includes a mechanism for sequentially feeding the strip-shaped substrate S in the longitudinal direction thereof. Yes.

基板回收部4係將通過基板處理部3所具備之基板處理裝置100之基板S例如捲取成捲軸狀加以回收。於基板回收部4,與基板供應部2同樣的,設有用以捲繞基板S之軸部及使該軸部旋轉之旋轉驅動源、以及覆蓋回收之基板S的覆蓋部等。此外,在基板處理部3將基板S例如切成平板(panel)狀之場合等時,亦可為例如將基板S回收成重疊狀態等與捲繞成捲軸狀之狀態不同之狀態回收基板S之構成。 The substrate collection unit 4 collects the substrate S of the substrate processing apparatus 100 included in the substrate processing unit 3, for example, in a roll shape. Similarly to the substrate supply unit 2, the substrate collection unit 4 is provided with a shaft portion for winding the substrate S, a rotation drive source for rotating the shaft portion, and a cover portion for covering the recovered substrate S. In the case where the substrate processing unit 3 cuts the substrate S into a flat shape, for example, the substrate S may be collected in a state in which the substrate S is collected in a stacked state or the like in a state of being wound into a reel. Composition.

基板處理部3,將從基板供應部2供應之基板S搬送至基板回收部4,並在搬送過程對基板S之被處理面Sa進行處理。基板處理部3具有例如處理裝置10、搬送裝置(搬送部)20。 The substrate processing unit 3 transports the substrate S supplied from the substrate supply unit 2 to the substrate collection unit 4, and processes the processed surface Sa of the substrate S during the transfer process. The substrate processing unit 3 includes, for example, a processing device 10 and a conveying device (transporting unit) 20.

處理裝置10具有用以對基板S之被處理面Sa形成例如有機EL元件之各種裝置。作為此種裝置,例如有用以在被處理面Sa上形成間隔壁之間隔壁形成裝置、用以形成電極的電極形成裝置、以及用以形成發光層之發光層形成裝置等。更具體而言,有液滴塗布裝置(例如噴墨型塗布裝置等)、成膜裝置(例如鍍敷裝置、蒸鍍裝置、濺鍍裝置)、曝光裝置、顯影裝置、表面改質裝置、洗淨裝置等。此等之各裝置,係沿基板S之搬送路徑適當設置。本實施形態中,作為處理裝置10例如以使用塗布裝置41、加熱裝置51~53、曝光裝置EX、顯影裝置42、洗淨裝置43、鍍敷裝置44(以上,於圖2以後詳述)等之構成為例來說明。 The processing apparatus 10 has various means for forming, for example, an organic EL element on the processed surface Sa of the substrate S. As such a device, for example, a partition wall forming device for forming a partition wall on the surface to be processed Sa, an electrode forming device for forming an electrode, and a light-emitting layer forming device for forming a light-emitting layer can be used. More specifically, there are a droplet applying device (for example, an inkjet coating device), a film forming device (for example, a plating device, a vapor deposition device, a sputtering device), an exposure device, a developing device, a surface modifying device, and a washing machine. Net device, etc. Each of these devices is appropriately disposed along the transport path of the substrate S. In the present embodiment, as the processing apparatus 10, for example, the application device 41, the heating devices 51 to 53, the exposure device EX, the developing device 42, the cleaning device 43, and the plating device 44 (described above in detail in FIG. 2) are used. The configuration is described as an example.

搬送裝置20具有在基板處理部3內導引基板S之複數個導引滾筒(導引部)R(圖1中僅例示2個滾筒)。導引滾筒R沿基板S之搬送路徑配置。於複數個導引滾筒R中之至少一部分之導引滾筒R安裝有旋轉驅 動機構(未圖示)。本實施形態中,搬送裝置20之搬送路徑之長度為例如全長數百公尺程度。 The transport device 20 has a plurality of guide rollers (guide portions) R that guide the substrate S in the substrate processing unit 3 (only two rollers are illustrated in FIG. 1). The guide roller R is disposed along the transport path of the substrate S. a guide roller R mounted on at least a part of the plurality of guide rollers R is mounted with a rotary drive Moving mechanism (not shown). In the present embodiment, the length of the transport path of the transport device 20 is, for example, about several hundred meters in total length.

圖2係顯示基板處理部3一部分之剖面圖。 2 is a cross-sectional view showing a part of the substrate processing unit 3.

如圖2所示,基板處理部3具有三個處理室11~13。處理室11~13被分隔部14分隔。 As shown in FIG. 2, the substrate processing unit 3 has three processing chambers 11 to 13. The processing chambers 11 to 13 are partitioned by the partition portion 14.

分隔部14具備構成處理室11之底部之分隔構件14a、構成處理室11之頂部及處理室12之底部之分隔構件14b、構成處理室12之頂部及處理室13之底部之分隔構件14c、構成處理室13之頂部之分隔構件14d。 The partition portion 14 includes a partition member 14a constituting the bottom of the processing chamber 11, a partition member 14b constituting the top of the processing chamber 11 and the bottom of the processing chamber 12, a partition member 14c constituting the top of the processing chamber 12, and the bottom of the processing chamber 13, and the like. The partition member 14d at the top of the processing chamber 13.

處理室11係在複數個處理室中配置於重力方向之最下部(最靠-Z側)。處理室11形成對基板S進行使用液體之處理(濕式處理)之處理空間。於處理室11,例如如圖2所示,作為處理裝置10係設有具備光阻液收容容器(收容用以對基板S塗布之光阻液)之塗布裝置41、具備顯影液收容容器(收容用以對基板S進行顯影處理之顯影液)之顯影裝置42、具備洗淨液收容容器(收容洗淨基板S之洗淨液)之洗淨裝置43、具備鍍敷液收容容器(收容用以對洗淨處理後之基板S形成圖案之鍍敷液)之鍍敷裝置44。此外,不限於上述液體,於處理室11亦能收容使用各種液體之處理裝置。 The processing chamber 11 is disposed at a lowermost portion (most at the -Z side) in the gravity direction in a plurality of processing chambers. The processing chamber 11 forms a processing space for performing processing (wet processing) using the liquid on the substrate S. In the processing chamber 11, as shown in FIG. 2, for example, a coating device 41 including a photoresist liquid storage container (containing a photoresist liquid for coating the substrate S), and a developer storage container (receiving) are provided as the processing device 10. A developing device 42 for developing a developing solution for the substrate S, a cleaning device 43 including a cleaning liquid storage container (a cleaning liquid for accommodating the cleaning substrate S), and a plating liquid storage container (for storage) A plating apparatus 44 for forming a plating solution on the substrate S after the cleaning process. Further, it is not limited to the above liquid, and the processing chamber 11 can also accommodate a processing device using various liquids.

塗布裝置41具有配置於該塗布裝置41內部、導引基板S之導引滾筒R2及將塗布處理結束之基板S從塗布裝置41內搬出至處理室11之導引滾筒R3。於基板S之搬送方向之導引滾筒R2之上游側配置有將從基板供應部2供應之基板S導引至塗布裝置41之導引滾筒R1。於顯影裝置42具有配置於該顯影裝置42內部、導引基板S之導引滾筒R20及將顯影處 理結束之基板S從顯影裝置42內搬出至處理室11內之導引滾筒R21。於基板S之搬送方向之導引滾筒R20之上游側配置有從處理室12之加熱裝置52經由導引滾筒R17將基板S導引至顯影裝置42之導引滾筒R18及R19。 The coating device 41 includes a guide roller R2 disposed inside the coating device 41, a guide substrate S, and a guide roller R3 that carries out the coating process from the coating device 41 to the processing chamber 11. A guide roller R1 that guides the substrate S supplied from the substrate supply unit 2 to the coating device 41 is disposed on the upstream side of the guide roller R2 in the transport direction of the substrate S. The developing device 42 has a guide roller R20 disposed inside the developing device 42 and guiding the substrate S, and a developing portion The substrate S that has been finished is carried out from the developing device 42 to the guide roller R21 in the processing chamber 11. Guide rollers R18 and R19 for guiding the substrate S from the heating device 52 of the processing chamber 12 to the developing device 42 via the guiding roller R17 are disposed on the upstream side of the guiding roller R20 in the conveying direction of the substrate S.

於基板S之搬送方向之導引滾筒R21之下游側配置有將基板S從顯影裝置42往洗淨裝置43導引之導引滾筒R22及R23。此外,此等導引滾筒R1、R18、R19、R22及R23配置於處理室11內。 Guide rollers R22 and R23 for guiding the substrate S from the developing device 42 to the cleaning device 43 are disposed on the downstream side of the guide roller R21 in the transport direction of the substrate S. Further, the guide rollers R1, R18, R19, R22, and R23 are disposed in the processing chamber 11.

於洗淨裝置43具備配置於該洗淨裝置43內部、導引基板S之導引滾筒R24及將洗淨處理結束之基板S從洗淨裝置43內搬出至處理室11內之導引滾筒R25。於鍍敷裝置44具備配置於該鍍敷裝置44內部、導引基板S之導引滾筒R28及將鍍敷處理結束之基板S從鍍敷裝置44內搬出至處理室11內之導引滾筒R29。 The cleaning device 43 includes a guide roller R24 disposed inside the cleaning device 43 and guiding the substrate S, and a guide roller R25 that carries out the cleaning process from the cleaning device 43 to the processing chamber 11 . The plating apparatus 44 includes a guide roller R28 disposed inside the plating apparatus 44, a guide substrate S, and a guide roller R29 that carries out the plating process from the plating apparatus 44 into the processing chamber 11 .

於分隔構件14a設有構成連接於未圖示之回收裝置之廢液回收流路一部分之複數個回收管(廢液回收部、回收部)45。回收管45之一端部分別連接於塗布裝置41、顯影裝置42及洗淨裝置43,另一端部連接於連接在回收裝置之未圖示廢液回收流路。各回收管45係將在塗布裝置41、顯影裝置42及洗淨裝置43成為廢液之光阻液、顯影液及洗淨液經由廢液回收流路排出至回收裝置。於回收管45設有未圖示之開閉閥。控制部CONT能控制該開閉閥之開閉時點。本實施形態中,由於於重力方向最下部之處理室11設有濕式處理用之裝置,因此能抑制此等裝置與回收裝置之間之廢液回收流路之流路系長度。 The partition member 14a is provided with a plurality of collection pipes (waste liquid recovery unit, collection unit) 45 constituting a part of the waste liquid recovery flow path connected to the recovery device (not shown). One end of the recovery pipe 45 is connected to the coating device 41, the developing device 42, and the cleaning device 43, respectively, and the other end portion is connected to a waste liquid recovery flow path (not shown) connected to the recovery device. Each of the recovery pipes 45 discharges the photoresist liquid, the developer, and the cleaning liquid which become the waste liquid in the coating device 41, the developing device 42, and the cleaning device 43 to the recovery device via the waste liquid recovery flow path. An opening and closing valve (not shown) is provided in the recovery pipe 45. The control unit CONT can control the opening and closing timing of the opening and closing valve. In the present embodiment, since the processing chamber 11 at the lowermost portion in the direction of gravity is provided with the apparatus for wet processing, the length of the flow path of the waste liquid recovery flow path between the apparatus and the recovery apparatus can be suppressed.

處理室12配置於處理室11上方(+Z側)。處理室12形成對基板S進行加熱處理之處理空間。於處理室12,作為處理裝置10係設有加 熱基板S之加熱裝置51~53。加熱裝置51係加熱藉由塗布裝置41塗布有光阻液之基板S,使光阻液乾燥。加熱裝置52係再度加熱通過處理室13之曝光裝置EX之基板S,使光阻液乾燥。加熱裝置52係以與加熱裝置51之加熱溫度不同之溫度、例如較加熱裝置51之加熱溫度高之溫度加熱基板S。加熱裝置53係加熱藉由顯影裝置42進行顯影處理且藉由洗淨裝置43洗淨後之基板S,使基板S之表面乾燥。 The processing chamber 12 is disposed above the processing chamber 11 (+Z side). The processing chamber 12 forms a processing space for heat-treating the substrate S. In the processing chamber 12, as the processing device 10, there is an addition Heating means 51 to 53 of the hot substrate S. The heating device 51 heats the substrate S coated with the photoresist by the coating device 41 to dry the photoresist. The heating device 52 reheats the substrate S passing through the exposure device EX of the processing chamber 13 to dry the photoresist. The heating device 52 heats the substrate S at a temperature different from the heating temperature of the heating device 51, for example, at a temperature higher than the heating temperature of the heating device 51. The heating device 53 heats the substrate S which has been subjected to development processing by the developing device 42 and is cleaned by the cleaning device 43, and the surface of the substrate S is dried.

於基板S之搬送方向之加熱裝置51之上游側配置有將通過處理室11內之塗布裝置41之基板S往該加熱裝置51導引之導引滾筒R4。於基板S之搬送方向之加熱裝置51之下游側,沿搬送路徑配置有導引滾筒R5、R6及R7,藉由此等導引滾筒R5、R6及R7將基板S導引至處理室13內之曝光裝置EX。 A guide roller R4 that guides the substrate S passing through the coating device 41 in the processing chamber 11 to the heating device 51 is disposed on the upstream side of the heating device 51 in the conveying direction of the substrate S. Guide rollers R5, R6, and R7 are disposed along the transport path on the downstream side of the heating device 51 in the transport direction of the substrate S, whereby the guide rollers R5, R6, and R7 guide the substrate S into the processing chamber 13 Exposure device EX.

於基板S之搬送方向之加熱裝置52之上游側,沿搬送路徑配置有將通過處理室13之曝光裝置EX之基板S經由導引滾筒R13往該加熱裝置52導引之導引滾筒R14、R15及R16。於基板S之搬送方向之加熱裝置52之下游側,於處理室11之顯影裝置42配置有經由導引滾筒R18及R19導引基板S之導引滾筒R17。 On the upstream side of the heating device 52 in the transport direction of the substrate S, guide rollers R14 and R15 for guiding the substrate S passing through the exposure device EX of the processing chamber 13 to the heating device 52 via the guide roller R13 are disposed along the transport path. And R16. On the downstream side of the heating device 52 in the conveying direction of the substrate S, the developing device 42 in the processing chamber 11 is provided with a guiding roller R17 for guiding the substrate S via the guiding rollers R18 and R19.

於基板S之搬送方向之加熱裝置53之上游側配置有將通過洗淨裝置43之基板S往該加熱裝置53導引之導引滾筒R26。又,於基板S之搬送方向之加熱裝置53之下游側,配置有將基板S導引至處理室11內之鍍敷裝置44之導引滾筒R27。又,於導引滾筒R27之+X側配置有將基板S導引至次一步驟之導引滾筒R30。此等導引滾筒R4、R5、R6、R7、R14、R15、R16、R17、R26、R27及R30配置於處理室12內。 A guide roller R26 that guides the substrate S passing through the cleaning device 43 to the heating device 53 is disposed on the upstream side of the heating device 53 in the conveying direction of the substrate S. Further, on the downstream side of the heating device 53 in the transport direction of the substrate S, a guide roller R27 that guides the substrate S to the plating device 44 in the processing chamber 11 is disposed. Further, a guide roller R30 for guiding the substrate S to the next step is disposed on the +X side of the guide roller R27. These guide rollers R4, R5, R6, R7, R14, R15, R16, R17, R26, R27 and R30 are disposed in the processing chamber 12.

於分隔構件14b,在處理室11與處理室12之間設有用以使基板S通過之複數個連接部15~19。連接部15~19例如係於Z方向貫通分隔構件14b之貫通孔。各連接部15~19形成為基板S能通過之尺寸。基板S藉由通過連接部15~19而橫跨處理室11與處理室12移動。 In the partition member 14b, a plurality of connecting portions 15 to 19 for passing the substrate S are provided between the processing chamber 11 and the processing chamber 12. The connecting portions 15 to 19 are, for example, through holes penetrating the partition member 14b in the Z direction. Each of the connecting portions 15 to 19 is formed to have a size through which the substrate S can pass. The substrate S moves across the processing chamber 11 and the processing chamber 12 by the connecting portions 15 to 19.

導引滾筒R3及導引滾筒R4係導引基板S通過連接部15。導引滾筒R17及導引滾筒R18係導引基板S通過連接部16。導引滾筒R25及導引滾筒R26係導引基板S通過連接部17。導引滾筒R27及導引滾筒R28係導引基板S通過連接部18。導引滾筒R29及導引滾筒R30係導引基板S通過連接部19。如上述,搬送裝置20係導引該基板S以使基板S通過連接部15~19。 The guide roller R3 and the guide roller R4 guide the substrate S through the connecting portion 15. The guide roller R17 and the guide roller R18 guide the substrate S through the connecting portion 16. The guide roller R25 and the guide roller R26 guide the substrate S through the connecting portion 17. The guide roller R27 and the guide roller R28 guide the substrate S through the connecting portion 18. The guide roller R29 and the guide roller R30 guide the substrate S through the connecting portion 19. As described above, the transport device 20 guides the substrate S so that the substrate S passes through the connecting portions 15 to 19.

此外,隔著連接部15~19配置之上述導引滾筒R3、R4、R17、R18、R25~R30例如亦可係具有調整基板S之溫度之調溫裝置之構成。藉由此構成,能在加熱裝置51~53之前後調整基板S之溫度。 Further, the guide rollers R3, R4, R17, R18, and R25 to R30 disposed via the connecting portions 15 to 19 may be configured to have a temperature adjustment device for adjusting the temperature of the substrate S, for example. With this configuration, the temperature of the substrate S can be adjusted before and after the heating devices 51 to 53.

其次說明加熱裝置51~53之詳細構成。加熱裝置51~53分別具有一個或複數個加熱單元50。圖3係顯示加熱單元50構成之側剖面圖。圖4係顯示加熱單元50構成之立體圖。 Next, the detailed configuration of the heating devices 51 to 53 will be described. The heating devices 51 to 53 each have one or a plurality of heating units 50. 3 is a side cross-sectional view showing the structure of the heating unit 50. 4 is a perspective view showing the construction of the heating unit 50.

如圖3及圖4所示,加熱單元50具有筐體60及加熱筐體60內之加熱部70。 As shown in FIGS. 3 and 4, the heating unit 50 includes a casing 60 and a heating unit 70 in the heating casing 60.

筐體60係藉由一對第一壁部(右側壁部60d及左側壁部60c)與一對第二壁部(上壁部60f及下壁部60e)形成內部空間之矩形環狀。又,形成於筐體60之內部空間發揮基板收容室(收容室)62之功能。於筐體60之一方之第一壁部(左側側壁部)60c形成有基板搬入口(搬入口)61,於筐體60 之另一方之第一壁部(右側側壁部)60d形成有基板搬出口(搬出口)63。又,將筐體60之一方端面(-Y側端面)作為第一開口端60a,將筐體60之另一方端面(+Y側端面)作為第二開口端60b。於筐體60之第一開口端60a及第二開口端60b設有用以使複數個加熱單元50連結之連結部(未圖示)。 The casing 60 is formed in a rectangular ring shape in which the pair of first wall portions (the right side wall portion 60d and the left side wall portion 60c) and the pair of second wall portions (the upper wall portion 60f and the lower wall portion 60e) form an internal space. Moreover, the internal space formed in the casing 60 functions as a substrate storage chamber (accommodation chamber) 62. A substrate carrying inlet (porting) 61 is formed in the first wall portion (left side wall portion) 60c of one of the casings 60, and the casing 60 is formed in the casing 60. The other first wall portion (right side wall portion) 60d is formed with a substrate transfer port (transport) 63. Moreover, one end surface (-Y side end surface) of the casing 60 is referred to as a first opening end 60a, and the other end surface (+Y side end surface) of the casing 60 is referred to as a second opening end 60b. A connecting portion (not shown) for connecting the plurality of heating units 50 is provided at the first open end 60a and the second open end 60b of the casing 60.

筐體60之第一開口端60a及第二開口端60b能安裝密閉基板收容室62之蓋部。因此,僅使用一個加熱單元50時,能藉由阻塞開口端60a及60b之端面來形成密閉空間。又,藉由連結複數個加熱單元50,能形成較使用單體之加熱單元50時更大之密閉空間。此情形下,能以蓋部阻塞配置於連結方向之端之加熱單元50之端面。 The first open end 60a and the second open end 60b of the casing 60 can be attached to the lid portion of the sealed substrate storage chamber 62. Therefore, when only one heating unit 50 is used, the sealed space can be formed by blocking the end faces of the open ends 60a and 60b. Further, by connecting a plurality of heating units 50, it is possible to form a larger sealed space than when the single heating unit 50 is used. In this case, the end surface of the heating unit 50 disposed at the end in the joining direction can be blocked by the lid portion.

基板搬入口61及基板搬出口63形成為基板S能通過之尺寸。亦即,基板搬入口61及基板搬出口63之Z方向尺寸形成為較基板S之厚度大。又,基板搬入口61及基板搬出口63之Y方向尺寸形成為較基板S之短邊方向之尺寸大。 The substrate transfer port 61 and the substrate transfer port 63 are formed to have a size through which the substrate S can pass. That is, the dimension of the substrate carrying inlet 61 and the substrate carrying opening 63 in the Z direction is formed to be larger than the thickness of the substrate S. Moreover, the dimension of the substrate carrying inlet 61 and the substrate carrying-out 63 in the Y direction is formed to be larger than the dimension of the short side of the substrate S.

於基板收容室62設有導引基板S之翻折滾筒(翻折部)64~67。翻折滾筒64~67被未圖示之支承構件於筐體60支承成能旋轉。翻折滾筒64及66配置於基板收容室62之+X側端部、亦即右側側壁部60d側。翻折滾筒65及67配置於基板收容室62之-X側端部、亦即左側側壁部60c側。翻折滾筒64、65、66及67依此順序從筐體60上部(+Z側)往下部(-Z側)配置。 Folding rollers (folding portions) 64 to 67 for guiding the substrate S are provided in the substrate accommodating chamber 62. The folding rollers 64 to 67 are rotatably supported by the housing 60 by a support member (not shown). The folding rollers 64 and 66 are disposed on the +X side end portion of the substrate storage chamber 62, that is, on the right side wall portion 60d side. The folding rollers 65 and 67 are disposed on the -X side end portion of the substrate storage chamber 62, that is, on the left side wall portion 60c side. The folding rollers 64, 65, 66, and 67 are arranged in this order from the upper portion (+Z side) of the casing 60 to the lower portion (-Z side).

翻折滾筒64將從基板搬入口61搬入並往+X方向行進之基板S往-X方向翻折。翻折滾筒65將在翻折滾筒64被翻折並往-X方向行進之基板S往+X方向翻折。翻折滾筒66將在翻折滾筒65被翻折並往+X方向 行進之基板S往-X方向翻折。翻折滾筒67將在翻折滾筒66被翻折並往-X方向行進之基板S往+X方向翻折。 The folding drum 64 folds the substrate S that has been carried in the +X direction from the substrate loading port 61 in the -X direction. The folding cylinder 65 folds the substrate S which is folded over in the folding drum 64 and travels in the -X direction in the +X direction. The folding drum 66 will be folded over the folding cylinder 65 and oriented in the +X direction The traveling substrate S is folded in the -X direction. The folding drum 67 folds the substrate S which is folded over in the folding drum 66 and travels in the -X direction in the +X direction.

因此,藉由翻折滾筒64~67而導引之基板S在從Z方向觀看時該基板S之翻折片(一部分)彼此重疊,且該翻折片彼此以非接觸狀態配置。因此,可一邊維持基板S之被處理面Sa之狀態,一邊有效率地將基板S收容於基板收容室62。 Therefore, the substrate S guided by the folding rollers 64 to 67 overlaps the folded sheets (parts) of the substrate S when viewed from the Z direction, and the folded sheets are disposed in a non-contact state with each other. Therefore, the substrate S can be efficiently accommodated in the substrate storage chamber 62 while maintaining the state of the processed surface Sa of the substrate S.

於翻折滾筒64~67中之至少1個連接有例如馬達等未圖示之旋轉驅動機構。控制部CONT能調整該旋轉驅動機構之轉數及旋轉之時點。因此,能依各加熱單元50調整基板S之搬送速度。 At least one of the folding rollers 64 to 67 is connected to a rotation driving mechanism (not shown) such as a motor. The control unit CONT can adjust the number of revolutions of the rotary drive mechanism and the timing of the rotation. Therefore, the transport speed of the substrate S can be adjusted in accordance with each heating unit 50.

又,亦可使翻折滾筒64~67中之至少1個移動於X方向、Y方向及Z方向之任一方向。此情形下,能藉由控制部CONT控制翻折滾筒64~67,來依各加熱單元50調整基板S之搬送路徑。此外,本實施形態中,雖於筐體60內配置有4個翻折滾筒,但亦能依照基板S之加熱時間增減其數目。 Further, at least one of the folding rollers 64 to 67 may be moved in either of the X direction, the Y direction, and the Z direction. In this case, the folding rollers 64 to 67 can be controlled by the control unit CONT to adjust the transport path of the substrate S for each heating unit 50. Further, in the present embodiment, although four folding rollers are disposed in the casing 60, the number of heating can be increased or decreased depending on the heating time of the substrate S.

圖5係例示加熱裝置51~53之構成之圖。 Fig. 5 is a view showing the configuration of the heating devices 51 to 53.

如圖5所示,加熱裝置51~53具有於Y方向排列配置有複數個之加熱單元50。該複數個加熱單元50為相鄰之加熱單元50彼此連結之狀態。此外,圖5中係省略加熱單元50之第一開口端60a之蓋部。 As shown in FIG. 5, the heating devices 51 to 53 have a plurality of heating units 50 arranged in the Y direction. The plurality of heating units 50 are in a state in which adjacent heating units 50 are coupled to each other. Further, in Fig. 5, the cover portion of the first open end 60a of the heating unit 50 is omitted.

藉由連結加熱單元50使基板收容室62彼此連通。因此,藉由加熱單元50連結,能構成設有複數個基板S之搬送路徑之一個加熱爐。加熱部70亦可為於複數個加熱單元50共通地設置之構成,亦可為於加熱單元50之各個個別設置之構成。 The substrate accommodating chambers 62 are connected to each other by the connection heating unit 50. Therefore, by the heating unit 50, it is possible to constitute one heating furnace in which a plurality of substrates S are transported. The heating unit 70 may be configured to be disposed in common to the plurality of heating units 50, or may be configured separately for each of the heating units 50.

在加熱部70於複數個加熱單元50共通地設置之情形,加熱部70能一起加熱形成為一個加熱爐之複數個基板收容室62。因此,經由不同搬送路徑而搬送之複數個基板S係在一個加熱爐被加熱部70一起加熱。因此,能謀求加熱處理之效率化。此外,在將加熱部70分別設於各加熱單元50時之構成之情形,亦可依各加熱單元50調整加熱溫度或加熱之時點。又,作為加熱部70,能使用發熱機構或照射電磁波之照射部(未圖示)等。 In a case where the heating unit 70 is provided in common to the plurality of heating units 50, the heating unit 70 can be heated together to form a plurality of substrate storage chambers 62 of one heating furnace. Therefore, the plurality of substrates S transported through the different transport paths are heated together by the heating unit 70 in one heating furnace. Therefore, the efficiency of the heat treatment can be improved. Further, in the case where the heating unit 70 is provided in each of the heating units 50, the heating temperature or the heating time may be adjusted in accordance with each heating unit 50. Further, as the heating unit 70, a heat generating unit or an irradiation unit (not shown) that irradiates electromagnetic waves can be used.

圖6係顯示處理室11中之加熱裝置51及52之配置之圖。 Fig. 6 is a view showing the arrangement of the heating devices 51 and 52 in the processing chamber 11.

圖6所示之構成中,係在處理室12使複數個加熱單元50連結之加熱裝置51於Y方向排列配置有複數個(3個)之構成。如此,藉由使加熱單元50或加熱裝置51於Y方向排列配置,與如圖7所示之使加熱單元50排列配置於X方向之構成相較,能更節約處理室12之空間。 In the configuration shown in Fig. 6, a plurality of (three) heating devices 51 that connect a plurality of heating units 50 in the processing chamber 12 are arranged in a row in the Y direction. As described above, by arranging the heating unit 50 or the heating device 51 in the Y direction, the space of the processing chamber 12 can be further saved as compared with the configuration in which the heating units 50 are arranged in the X direction as shown in FIG. 7 .

返回圖2,處理室13配置於處理室12之上方(+Z側)。處理室13係對基板S進行曝光處理之處理空間。於處理室13,作為處理裝置10係設有曝光裝置EX。曝光裝置EX係對在塗布裝置41中塗布於基板S之光阻層照射經由光罩圖案之曝光用光。於處理室13配置有將基板S導引至被照射曝光裝置EX之曝光用光之位置之導引滾筒R10及R11。 Returning to Fig. 2, the processing chamber 13 is disposed above the processing chamber 12 (+Z side). The processing chamber 13 is a processing space for performing exposure processing on the substrate S. In the processing chamber 13, an exposure device EX is provided as the processing device 10. The exposure apparatus EX irradiates the photoresist layer applied to the substrate S in the coating apparatus 41 with the exposure light via the mask pattern. Guide rollers R10 and R11 for guiding the substrate S to the position of the exposure light to be irradiated to the exposure device EX are disposed in the processing chamber 13.

於分隔構件14c形成有開口部90。開口部90係在Z方向貫通分隔構件14c而形成。基板S藉由導引滾筒R8及R9,經由該開口部90從處理室12往處理室13被導引。又,基板S藉由導引滾筒R12及R13,經由該開口部90從處理室13往處理室12被導引。如上述,開口部90係基板S通過之部分。 An opening 90 is formed in the partition member 14c. The opening 90 is formed to penetrate the partition member 14c in the Z direction. The substrate S is guided from the processing chamber 12 to the processing chamber 13 via the opening 90 by the guide rollers R8 and R9. Further, the substrate S is guided from the processing chamber 13 to the processing chamber 12 via the opening portion 90 by the guide rollers R12 and R13. As described above, the opening portion 90 is a portion through which the substrate S passes.

於開口部90內部設有振動除去裝置(調整機構)91,其除去被 搬送裝置20(例如導引滾筒R8~R13等)導引之基板S之振動。振動除去裝置91為藉由消除基板S之張力而使基板S之振動傳達性降低來除去傳達至基板S之振動之構成。因此,本實施形態之振動除去裝置91具有用以消除基板S之張力之張力消除機構92及93。此外,振動除去裝置91可不完全消除基板S之振動,只要能將振動減低至處理裝置能容許之程度即可。因此,張力消除機構亦能稱為張力減低機構。 A vibration removing device (adjusting mechanism) 91 is provided inside the opening portion 90 to remove the The vibration of the substrate S guided by the transport device 20 (for example, the guide rollers R8 to R13, etc.). The vibration removing device 91 is configured to remove the vibration transmitted to the substrate S by eliminating the tension of the substrate S and reducing the vibration transmission property of the substrate S. Therefore, the vibration removing device 91 of the present embodiment has the tension removing mechanisms 92 and 93 for eliminating the tension of the substrate S. Further, the vibration removing device 91 may not completely eliminate the vibration of the substrate S as long as the vibration can be reduced to a level that the processing device can tolerate. Therefore, the strain relief mechanism can also be referred to as a tension reduction mechanism.

張力消除機構92配置於較曝光裝置EX(導引滾筒R10)更靠基板S之搬送方向上游側。更具體而言,張力消除機構92配置於導引滾筒R8與導引滾筒R9之間。張力消除機構93配置於較曝光裝置EX(導引滾筒R11)更靠基板S之搬送方向下游側。更具體而言,張力消除機構93配置於導引滾筒R12與導引滾筒R13之間。 The tension canceling mechanism 92 is disposed on the upstream side of the substrate S in the transport direction of the exposure device EX (guide roller R10). More specifically, the tension eliminating mechanism 92 is disposed between the guide roller R8 and the guide roller R9. The tension canceling mechanism 93 is disposed on the downstream side of the substrate S in the transport direction of the exposure device EX (guide roller R11). More specifically, the tension eliminating mechanism 93 is disposed between the guide roller R12 and the guide roller R13.

圖8係顯示張力消除機構92及93之構成之圖。 Fig. 8 is a view showing the configuration of the strain relief mechanisms 92 and 93.

如圖8所示,張力消除機構92及93具有方向轉換滾筒94a及94b(方向轉換部94)與夾持滾筒95a及95b(夾持部95)。方向轉換滾筒94a及94b係將基板S之搬送方向轉換為基板S往重力方向(-Z方向)鬆弛。具體而言,基板S中之方向轉換滾筒94a與方向轉換滾筒94b間之部分Sb為鬆弛之狀態。又,於方向轉換滾筒94a設有溫度調整機構(基板調溫部)94c。藉由溫度調整機構94c調整基板S中接觸於方向轉換滾筒94a之部分之溫度。此外,該溫度調整機構94c亦能省略。 As shown in Fig. 8, the tension eliminating mechanisms 92 and 93 have direction changing rollers 94a and 94b (direction changing portion 94) and holding rollers 95a and 95b (nip portion 95). The direction changing rollers 94a and 94b convert the conveying direction of the substrate S into the substrate S in the direction of gravity (-Z direction). Specifically, the portion Sb between the direction changing roller 94a and the direction changing roller 94b in the substrate S is in a relaxed state. Further, a temperature adjustment mechanism (substrate temperature adjustment unit) 94c is provided in the direction change roller 94a. The temperature of the portion of the substrate S that is in contact with the direction changing roller 94a is adjusted by the temperature adjusting mechanism 94c. Further, the temperature adjustment mechanism 94c can also be omitted.

夾持滾筒95a設於在與方向轉換滾筒94a之間夾著基板S之位置。夾持滾筒95b設於在與方向轉換滾筒94b之間夾著基板S之位置。夾持滾筒95a及95b連接於旋轉驅動部96。旋轉驅動部96個別調整夾持滾筒 95a及95b之旋轉時點或轉數。因此,能在形成有鬆弛部分Sb之狀態下搬送基板S。 The nip roller 95a is provided at a position sandwiching the substrate S between the direction changing roller 94a. The nip roller 95b is provided at a position sandwiching the substrate S between the direction changing roller 94b. The grip rollers 95a and 95b are connected to the rotation driving portion 96. The rotation driving portion 96 individually adjusts the clamping roller The rotation time or number of revolutions of 95a and 95b. Therefore, the substrate S can be conveyed in a state in which the slack portion Sb is formed.

又,在基板S中以方向轉換滾筒94a與夾持滾筒95a所夾之部分與基板S中以方向轉換滾筒94b與夾持滾筒95b所夾之部分之間,能以搬送速度不同之方式搬送基板S。是以,能一邊調整鬆弛部分Sb之尺寸,一邊搬送基板S。 Further, in the substrate S, the portion sandwiched between the direction changing roller 94a and the nip roller 95a and the portion of the substrate S sandwiched by the direction changing roller 94b and the nip roller 95b can transport the substrate at different conveying speeds. S. Therefore, the substrate S can be conveyed while adjusting the size of the slack portion Sb.

如上述,藉由張力消除機構92及93形成鬆弛部分Sb並使基板S之張力消除,來自方向轉換滾筒94a及夾持滾筒95a之上游側之振動係被減低。因此,在隔著張力消除機構92及93之處理室12與處理室13之間,抑制基板S之振動之傳達。因此,配置於處理室13之曝光裝置EX,係不受處理室11或處理室12之振動影響地進行曝光處理。由於此種張力消除機構92及93配置於分隔構件14c,因此能有效率地利用基板處理部3之處理室11~13之空間。 As described above, the slack portion Sb is formed by the strain relief mechanisms 92 and 93, and the tension of the substrate S is eliminated, and the vibration from the upstream side of the direction change roller 94a and the pinch roller 95a is reduced. Therefore, the transmission of the vibration of the substrate S is suppressed between the processing chamber 12 and the processing chamber 13 via the tension eliminating mechanisms 92 and 93. Therefore, the exposure apparatus EX disposed in the processing chamber 13 performs exposure processing without being affected by the vibration of the processing chamber 11 or the processing chamber 12. Since the tension eliminating mechanisms 92 and 93 are disposed in the partition member 14c, the space of the processing chambers 11 to 13 of the substrate processing unit 3 can be utilized efficiently.

其次,說明使用如上述構成之基板處理裝置100製造有機EL元件、液晶顯示元件等顯示元件(電子元件)之步驟。基板處理裝置100係依照控制部CONT之控制製造該顯示元件。 Next, a procedure of manufacturing a display element (electronic component) such as an organic EL element or a liquid crystal display element using the substrate processing apparatus 100 having the above configuration will be described. The substrate processing apparatus 100 manufactures the display element in accordance with the control of the control unit CONT.

首先,將捲纏於未圖示之滾筒之基板S安裝於基板供應部2。控制部CONT以從此狀態從基板供應部2送出該基板S之方式使未圖示之滾筒旋轉。接著,以設於基板回收部4之未圖示之滾筒捲取通過基板處理部3之該基板S。 First, the substrate S wound around a roller (not shown) is attached to the substrate supply unit 2. The control unit CONT rotates the drum (not shown) so that the substrate S is sent out from the substrate supply unit 2 from this state. Then, the substrate S passing through the substrate processing unit 3 is taken up by a roller (not shown) provided in the substrate collecting portion 4.

控制部CONT,在基板S從基板供應部2送出後至以基板回收部4捲取之期間,係藉由基板處理部3之搬送裝置20使基板S在該基板 處理部3內適當地搬送。控制部CONT,首先使基板S搬入基板處理部3之處理室11。以下,說明控制部CONT之動作。 The control unit CONT causes the substrate S to be on the substrate by the transfer device 20 of the substrate processing unit 3 after the substrate S is fed from the substrate supply unit 2 to the substrate recovery unit 4 The inside of the processing unit 3 is appropriately transported. The control unit CONT first carries the substrate S into the processing chamber 11 of the substrate processing unit 3. Hereinafter, the operation of the control unit CONT will be described.

搬入處理室11之基板S,經由如圖2所示之導引滾筒R1而搬入塗布裝置41。在塗布裝置41,基板S被導引滾筒R2往+X方向搬送。在搬送之過程中,於基板S之被處理面Sa形成感光劑之塗布膜。在塗布裝置41被進行處理之基板S藉由導引滾筒R3之導引經由連接部15往處理室12搬送。 The substrate S carried into the processing chamber 11 is carried into the coating device 41 via the guide roller R1 as shown in FIG. 2 . In the coating device 41, the substrate S is conveyed by the guide roller R2 in the +X direction. During the transfer, a coating film of a photosensitive agent is formed on the surface to be processed Sa of the substrate S. The substrate S processed by the coating device 41 is transported to the processing chamber 12 via the connecting portion 15 by the guide roller R3.

搬入處理室12之基板S經由導引滾筒R4從加熱裝置51之基板搬入口61往基板收容室62搬入(參照圖3)。在基板收容室62,在基板S被翻折複數次之狀態下加熱基板S,在此搬送狀態下進行基板S之加熱。因此,能進行有效地利用了基板收容室62空間之加熱處理。在加熱裝置51,藉由加熱使形成於基板S之塗布膜乾燥。在進行加熱處理後,從基板搬出口63搬出之基板S經由導引滾筒R5、R6及R7往開口部90搬送。 The substrate S carried into the processing chamber 12 is carried into the substrate accommodating chamber 62 from the substrate loading port 61 of the heating device 51 via the guiding roller R4 (see FIG. 3). In the substrate accommodating chamber 62, the substrate S is heated while the substrate S is folded over a plurality of times, and the substrate S is heated in this transport state. Therefore, the heat treatment for effectively utilizing the space of the substrate accommodating chamber 62 can be performed. In the heating device 51, the coating film formed on the substrate S is dried by heating. After the heat treatment, the substrate S carried out from the substrate carrying-out port 63 is conveyed to the opening portion 90 via the guide rolls R5, R6, and R7.

到達開口部90之基板S,被導引滾筒R8搬入張力消除機構92。在張力消除機構92,藉由在以方向轉換滾筒94a與夾持滾筒95a所夾之部分與以方向轉換滾筒94b與夾持滾筒95b所夾之部分之間使搬送速度不同,以於基板S形成鬆弛部分Sb。 The substrate S that has reached the opening 90 is carried into the tension eliminating mechanism 92 by the guide roller R8. In the tension eliminating mechanism 92, the conveying speed is made different between the portion sandwiched by the direction changing roller 94a and the holding roller 95a and the portion sandwiched by the direction changing roller 94b and the holding roller 95b, so that the substrate S is formed. Relaxed part Sb.

在形成鬆弛部分Sb後,使方向轉換滾筒94a及94b與夾持滾筒95a及95b對基板S之搬送速度相等。藉由此動作,使基板S在形成有鬆弛部分Sb之狀態下從張力消除機構92被搬出。該基板S經由導引滾筒R9往處理室13搬送。 After the slack portion Sb is formed, the conveying speeds of the direction changing rolls 94a and 94b and the holding rolls 95a and 95b to the substrate S are made equal. By this operation, the substrate S is carried out from the tension eliminating mechanism 92 in a state where the slack portion Sb is formed. The substrate S is transferred to the processing chamber 13 via the guide roller R9.

從處理室12側經由基板S而傳達之振動,係於基板S之鬆 弛部分Sb除去振動。因此,抑制振動經由基板S傳達至處理室13。此外,當於方向轉換滾筒94a設有溫度調整機構94c之情形,係在該方向轉換滾筒94a進行基板S之溫度調整。此處係調整成例如適於曝光處理之溫度。 The vibration transmitted from the processing chamber 12 side via the substrate S is tied to the substrate S The relaxation portion Sb removes vibration. Therefore, the vibration is suppressed from being transmitted to the processing chamber 13 via the substrate S. Further, in the case where the temperature adjustment mechanism 94c is provided in the direction change roller 94a, the temperature change of the substrate S is performed in the direction change roller 94a. Here, it is adjusted to, for example, a temperature suitable for exposure processing.

往處理室13搬入之基板S被導引滾筒R10及R11搬送。藉由曝光裝置EX對該基板S進行曝光處理。藉由曝光處理,形成於基板S之被處理面Sa之塗布膜中之既定區域係感光。在曝光處理結束之基板S插入開口部90後,經由導引滾筒R12搬入張力消除機構93。 The substrate S carried into the processing chamber 13 is transported by the guide rollers R10 and R11. The substrate S is subjected to exposure processing by an exposure device EX. By exposure processing, a predetermined area formed in the coating film of the processed surface Sa of the substrate S is light-sensitive. After the substrate S whose exposure process is completed is inserted into the opening 90, the tension eliminating mechanism 93 is carried in via the guide roller R12.

在張力消除機構93,係與上述之張力消除機構92同樣地於基板S形成鬆弛部分Sb。因此,從處理室12側經由基板S而傳達之振動,係於基板S之鬆弛部分Sb除去振動。另一方面,如前述,在張力消除機構92亦形成有鬆弛部分Sb,因此,基板S中配置於處理室13之部分,成為在張力消除機構92及張力消除機構93兩者被除去來自處理室12之振動傳達之狀態。 In the tension canceling mechanism 93, the slack portion Sb is formed on the substrate S in the same manner as the above-described tension canceling mechanism 92. Therefore, the vibration transmitted from the processing chamber 12 side via the substrate S is removed from the slack portion Sb of the substrate S to remove the vibration. On the other hand, as described above, since the slack portion Sb is also formed in the tension canceling mechanism 92, the portion of the substrate S disposed in the processing chamber 13 is removed from the processing chamber in both the strain relief mechanism 92 and the strain relief mechanism 93. The state of vibration transmitted by 12.

若導引滾筒R8~R13或加熱裝置51、52等之振動傳達至基板S,則會有基板S或其他部位在曝光裝置EX之曝光用光照射位置振動之情形,而有可能使曝光精度降低。因此,藉由使用振動除去裝置91除去在橫跨曝光裝置EX之部分之基板S之振動,來抑制曝光精度之降低。 When the vibrations of the guide rollers R8 to R13 or the heating devices 51 and 52 are transmitted to the substrate S, the substrate S or other portions may be vibrated at the exposure light irradiation position of the exposure device EX, and the exposure accuracy may be lowered. . Therefore, the vibration of the substrate S across the portion of the exposure device EX is removed by using the vibration removing device 91, thereby suppressing the decrease in the exposure accuracy.

從處理室13往處理室12搬送之基板S,經由導引滾筒R14、R15及R16搬入加熱裝置52。在加熱裝置52,進行對已感光之塗布膜之加熱處理。在進行加熱處理後,從加熱裝置52搬出之基板S經由導引滾筒R17插入連接部16,經由連接部16往處理室11搬送。 The substrate S transferred from the processing chamber 13 to the processing chamber 12 is carried into the heating device 52 via the guiding rollers R14, R15, and R16. In the heating device 52, heat treatment of the photosensitive coating film is performed. After the heat treatment, the substrate S carried out from the heating device 52 is inserted into the connection portion 16 via the guide roller R17, and is transported to the processing chamber 11 via the connection portion 16.

搬送至處理室11之基板S經由導引滾筒R18及R19搬入顯 影裝置42。在顯影裝置42,基板S係一邊被浸於顯影液一邊被導引滾筒R20搬送,而在搬送之過程中進行顯影處理。已被進行顯影處理之基板S被導引滾筒R21從顯影裝置42搬出,經由導引滾筒R22及R23往洗淨裝置43搬入。 The substrate S transferred to the processing chamber 11 is moved into the display via the guide rollers R18 and R19. Shadow device 42. In the developing device 42, the substrate S is conveyed by the guide roller R20 while being immersed in the developing solution, and is subjected to development processing during the conveyance. The substrate S that has been subjected to development processing is carried out from the developing device 42 by the guide roller R21, and is carried into the cleaning device 43 via the guide rollers R22 and R23.

在洗淨裝置43,基板S係一邊被浸於顯影液一邊被導引滾筒R24搬送,而在搬送之過程中進行洗淨處理。已被進行洗淨處理之基板S被導引滾筒R25從洗淨裝置43搬出後,經由連接部17往處理室12搬入。 In the cleaning device 43, the substrate S is conveyed by the guide roller R24 while being immersed in the developer, and is washed during the conveyance. The substrate S that has been subjected to the cleaning process is carried out from the cleaning device 43 by the guide roller R25, and then carried into the processing chamber 12 via the connecting portion 17.

搬送至處理室12之基板S經由導引滾筒R26搬入加熱裝置53。在加熱裝置53,進行用以使已洗淨之基板S乾燥之加熱處理或用以加熱塗布膜之加熱處理等。進行該加熱處理後,從加熱裝置53搬出之基板S藉由導引滾筒R27之導引經由連接部18往處理室11搬送。 The substrate S transferred to the processing chamber 12 is carried into the heating device 53 via the guide roller R26. In the heating device 53, heat treatment for drying the washed substrate S or heat treatment for heating the coating film or the like is performed. After the heat treatment, the substrate S carried out from the heating device 53 is conveyed to the processing chamber 11 via the connecting portion 18 by the guide roller R27.

搬送至處理室11之基板S被搬入鍍敷裝置44。在鍍敷裝置44,基板S係一邊被浸於鍍敷液一邊被導引滾筒R28搬送,而在搬送之過程中進行鍍敷處理。於已被進行鍍敷處理之基板S形成既定圖案。鍍敷處理後之基板S被導引滾筒R29從鍍敷裝置44搬出,經由連接部19往處理室12搬送。在處理室12,經由導引滾筒R30搬入未圖示之加熱裝置,而進行加熱處理。 The substrate S transferred to the processing chamber 11 is carried into the plating device 44. In the plating apparatus 44, the substrate S is conveyed by the guide roller R28 while being immersed in the plating liquid, and is plated during the conveyance. The substrate S that has been subjected to the plating treatment forms a predetermined pattern. The substrate S after the plating treatment is carried out from the plating device 44 by the guide roller R29, and is transported to the processing chamber 12 via the connection portion 19. In the processing chamber 12, a heating device (not shown) is carried through the guide roller R30 to perform heat treatment.

如以上所述,根據本實施形態,係配置對基板S分別進行不同種類之處理之處理部3且將此處理部3中具有彼此共通之處理步驟(共通次程序)之處理部3配置於相同處理室內。進而,由於具備搬送裝置20,該搬送裝置20能以基板S橫跨各處理室11~13內被搬送之方式且基板S對各個處理室11~13進出複數次之方式搬送基板S,因此能有效率地利用基板處 理部3之空間。 As described above, according to the present embodiment, the processing unit 3 that performs different types of processing on the substrate S is disposed, and the processing unit 3 having the processing steps (common subprograms) common to each other in the processing unit 3 is disposed in the same manner. Processing indoors. Further, since the transport device 20 is provided, the transport device 20 can transport the substrate S so that the substrate S can be transported across the processing chambers 11 to 13 and the substrate S can be moved in and out of the processing chambers 11 to 13 a plurality of times. Efficient use of the substrate The space of the Ministry of Science.

例如,如本實施形態所示,在形成顯示元件之構成要素時,由於會頻繁地進行加熱處理,因此會設有多數台加熱裝置。在如本實施形態所示使加熱裝置彙整配置於一個處理室12時,能有效率地利用熱能。又,由於係使配置加熱裝置之處理室12配置於Z方向之中央階層,隔著該處理室12配置處理室11(濕式處理)及處理室13(曝光處理)之構成,因此為易進出加熱裝置之構成。因此,能使裝置整體之基板S之搬送路徑縮短。又,在處理室12,由於加熱裝置以於X方向及Y方向重疊之方式排列配置有複數個,因此能節約處理室12之空間。因此,能抑制為了設置基板處理裝置100所需要之設置地面積。 For example, as shown in the present embodiment, when the components of the display element are formed, since the heat treatment is frequently performed, a plurality of heating devices are provided. When the heating device is placed in one processing chamber 12 as in the present embodiment, thermal energy can be utilized efficiently. Further, since the processing chamber 12 in which the heating device is disposed is disposed at the center level in the Z direction, the processing chamber 11 (wet processing) and the processing chamber 13 (exposure processing) are disposed via the processing chamber 12, so that it is easy to access. The composition of the heating device. Therefore, the transport path of the substrate S as a whole can be shortened. Further, in the processing chamber 12, since the heating device is arranged in a plurality of rows so as to overlap in the X direction and the Y direction, the space of the processing chamber 12 can be saved. Therefore, the area of the installation required to provide the substrate processing apparatus 100 can be suppressed.

又,圖2中,作為處理裝置10,雖以塗布裝置、加熱裝置、曝光裝置、顯影裝置、洗淨裝置、鍍敷裝置之組合為例進行了說明。但並不限定於此組合。又,亦可使此處理裝置10於X方向或Y方向配置複數個。亦即,經由導引滾筒R30使基板S搬送至其他處理裝置10之塗布裝置,藉由反覆進行上述之動作,於基板S依序形成顯示元件之構成要素。此情形下,在配置複數個處理裝置10時,亦可使複數個曝光裝置EX之曝光精度或解析度互異。 In addition, in FIG. 2, as a processing apparatus 10, the combination of a coating apparatus, a heating apparatus, an exposure apparatus, a developing apparatus, a washing apparatus, and a plating apparatus was demonstrated as an example. However, it is not limited to this combination. Further, the processing device 10 may be arranged in plural in the X direction or the Y direction. That is, the substrate S is transported to the coating device of the other processing apparatus 10 via the guide roller R30, and by repeating the above-described operations, the constituent elements of the display element are sequentially formed on the substrate S. In this case, when a plurality of processing apparatuses 10 are arranged, the exposure precision or resolution of the plurality of exposure apparatuses EX may be different.

在將此處理裝置10於Y方向配置複數個時,如上述,能使用如圖5所示之複數個加熱單元50、亦即將相鄰之加熱單元50連結之構成。 When a plurality of the processing apparatuses 10 are arranged in the Y direction, as described above, a plurality of heating units 50 as shown in FIG. 5 and a heating unit 50 adjacent thereto can be connected.

本發明之技術範圍並不限於上述實施形態,在不脫離本發明之趣旨之範圍內可施加適當變更。 The technical scope of the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the spirit and scope of the invention.

例如,上述實施形態中,雖使用如圖8所示之張力消除機構 92及93之構成作為振動除去裝置91之構成,但並不限於此。作為振動除去裝置91,亦可為例如分別示於圖9~圖11之構成。 For example, in the above embodiment, a tension eliminating mechanism as shown in FIG. 8 is used. The configuration of 92 and 93 is a configuration of the vibration removing device 91, but is not limited thereto. The vibration removing device 91 may be configured as shown in, for example, FIGS. 9 to 11 .

圖9係顯示作為振動除去裝置91之張力消除機構92及93之其他構成例之振動吸收機構192及193。 Fig. 9 shows vibration absorbing mechanisms 192 and 193 which are other configuration examples of the strain relief mechanisms 92 and 93 of the vibration removing device 91.

振動吸收機構192及193具有方向轉換滾筒194a及194b(方向轉換部194)與振動吸收部196。 The vibration absorbing mechanisms 192 and 193 have direction changing rollers 194a and 194b (direction changing portion 194) and a vibration absorbing portion 196.

振動吸收部196具有滾筒196a、滾筒支承部196b、彈簧構件196c、以及壁部196d。 The vibration absorbing portion 196 has a drum 196a, a drum support portion 196b, a spring member 196c, and a wall portion 196d.

滾筒196a配置於方向轉換滾筒194a與方向轉換滾筒194b之間。於此滾筒196a掛有基板S中被方向轉換之一部分Sc。滾筒196a透過滾筒支承部196b及彈簧構件196c安裝於壁部196d。因此,基板S之振動係在該一部分Sc被滾筒196a及彈簧構件196c吸收。 The drum 196a is disposed between the direction change roller 194a and the direction change roller 194b. The roller 196a is hung with a portion Sc which is direction-converted in the substrate S. The drum 196a is attached to the wall portion 196d through the drum support portion 196b and the spring member 196c. Therefore, the vibration of the substrate S is absorbed by the roller 196a and the spring member 196c in the portion Sc.

圖10係顯示作為振動除去裝置91之張力消除機構92及93之其他構成例之振動吸收機構292及293。 FIG. 10 shows vibration absorbing mechanisms 292 and 293 which are other configuration examples of the strain relief mechanisms 92 and 93 of the vibration removing device 91.

振動吸收機構292及293具有方向轉換滾筒294a及294b(方向轉換部294)與振動吸收部297。振動吸收部297具有滾筒297a、形成於該滾筒297a之圓筒面之振動吸收層297b。 The vibration absorbing mechanisms 292 and 293 have direction changing rollers 294a and 294b (direction changing portion 294) and a vibration absorbing portion 297. The vibration absorbing portion 297 has a drum 297a and a vibration absorbing layer 297b formed on a cylindrical surface of the drum 297a.

滾筒297a配置於方向轉換滾筒294a與方向轉換滾筒294b之間。於此滾筒297a掛有基板S中被方向轉換之一部分Sc。振動吸收層297b係使用例如SORBOTHANE等振動吸收性材料。圖10所示之構成中,由於係藉由形成於滾筒297a之振動吸收層297b吸收基板S之振動,因此能以簡單之構成達成。 The drum 297a is disposed between the direction change roller 294a and the direction change roller 294b. The roller 297a is hung with a portion Sc which is direction-converted in the substrate S. As the vibration absorbing layer 297b, a vibration absorbing material such as SORBOTHANE is used. In the configuration shown in Fig. 10, since the vibration of the substrate S is absorbed by the vibration absorbing layer 297b formed on the drum 297a, it can be achieved with a simple configuration.

圖11係顯示作為振動除去裝置91之張力消除機構92及93之其他構成例之振動賦予機構392及393。 Fig. 11 shows vibration imparting mechanisms 392 and 393 as other structural examples of the strain canceling mechanisms 92 and 93 of the vibration removing device 91.

振動賦予機構392及393具有方向轉換滾筒394a及394b(方向轉換部394)與振動產生部398。振動產生部398具有滾筒398a、使該滾筒398a振動之振動調整部398b、以及檢測出基板S中在滾筒398a下游側之位置之振動之感測器398c。 The vibration imparting mechanisms 392 and 393 have direction changing rollers 394a and 394b (direction changing portion 394) and a vibration generating portion 398. The vibration generating unit 398 includes a drum 398a, a vibration adjusting unit 398b that vibrates the drum 398a, and a sensor 398c that detects vibration of the position of the substrate S on the downstream side of the drum 398a.

滾筒398a配置於方向轉換滾筒394a與方向轉換滾筒394b之間。於此滾筒398a掛有基板S中被方向轉換之一部分Sc。振動調整部398b係根據感測器398c之檢測結果使抵消基板S振動之振動產生。因此,圖11所示之構成中,藉由在滾筒398a抵消基板S之振動,而能抑制基板S之振動之傳達。 The drum 398a is disposed between the direction change roller 394a and the direction change roller 394b. The roller 398a is hung with a portion Sc which is directionally converted in the substrate S. The vibration adjusting unit 398b generates vibration that cancels the vibration of the substrate S based on the detection result of the sensor 398c. Therefore, in the configuration shown in Fig. 11, the vibration of the substrate S can be suppressed by the roller 398a, whereby the vibration of the substrate S can be suppressed.

此外,亦可如圖12所示,例如在上述張力消除機構92之構成中,方向轉換滾筒94a與夾持滾筒95a配置於處理室12,方向轉換滾筒94b與夾持滾筒95b配置於處理室13,在上述張力消除機構93之構成中,方向轉換滾筒94a與夾持滾筒95a配置於處理室13,方向轉換滾筒94b與夾持滾筒95b配置於處理室12。 Further, as shown in FIG. 12, for example, in the configuration of the tension canceling mechanism 92, the direction change roller 94a and the pinch roller 95a are disposed in the process chamber 12, and the direction change roller 94b and the pinch roller 95b are disposed in the process chamber 13. In the configuration of the tension canceling mechanism 93, the direction change roller 94a and the pinch roller 95a are disposed in the process chamber 13, and the direction change roller 94b and the pinch roller 95b are disposed in the process chamber 12.

同樣地,亦可係在圖9所示之振動吸收機構192之構成中,例如方向轉換滾筒194a與滾筒196a配置於處理室12,方向轉換滾筒194b配置於處理室13,在振動吸收機構193之構成中,方向轉換滾筒194a配置於處理室13,滾筒196a與方向轉換滾筒194b配置於處理室12。又,作為壁部196d亦可使用例如分隔構件14b等。 Similarly, in the configuration of the vibration absorbing mechanism 192 shown in FIG. 9, for example, the direction change roller 194a and the drum 196a are disposed in the process chamber 12, and the direction change roller 194b is disposed in the process chamber 13, and the vibration absorbing mechanism 193 is In the configuration, the direction change roller 194a is disposed in the processing chamber 13, and the drum 196a and the direction change roller 194b are disposed in the processing chamber 12. Further, as the wall portion 196d, for example, a partition member 14b or the like can be used.

又,亦可係在圖10所示之振動吸收機構292之構成中,例 如方向轉換滾筒294a與滾筒297a配置於處理室12,方向轉換滾筒294b配置於處理室13,在振動吸收機構293之構成中,方向轉換滾筒294a配置於處理室13,滾筒297a與方向轉換滾筒294b配置於處理室12。 Further, it may be in the configuration of the vibration absorbing mechanism 292 shown in Fig. 10, for example. The direction change roller 294a and the roller 297a are disposed in the process chamber 12, and the direction change roller 294b is disposed in the process chamber 13. In the configuration of the vibration absorption mechanism 293, the direction change roller 294a is disposed in the process chamber 13, and the roller 297a and the direction change roller 294b It is disposed in the processing chamber 12.

進而,亦可係在圖11所示之振動賦予機構392之構成中,例如方向轉換滾筒394a與滾筒398a配置於處理室12,方向轉換滾筒394b配置於處理室13,在振動吸收機構393之構成中,方向轉換滾筒394a配置於處理室13,滾筒398a與方向轉換滾筒394b配置於處理室12。 Further, in the configuration of the vibration applying mechanism 392 shown in FIG. 11, for example, the direction changing roller 394a and the drum 398a are disposed in the processing chamber 12, the direction changing roller 394b is disposed in the processing chamber 13, and the vibration absorbing mechanism 393 is configured. The direction change roller 394a is disposed in the processing chamber 13, and the roller 398a and the direction change roller 394b are disposed in the processing chamber 12.

又,亦可係在圖8所示之張力消除機構92及93之構成中,方向轉換滾筒94a及夾持滾筒95a與方向轉換滾筒94b及夾持滾筒95b配置於處理室12及處理室13中至少一方之構成。於圖13顯示方向轉換滾筒94a及94b與夾持滾筒95a及95b配置於處理室13之構成。 Further, in the configuration of the strain relief mechanisms 92 and 93 shown in FIG. 8, the direction change roller 94a, the pinch roller 95a, the direction change roller 94b, and the pinch roller 95b may be disposed in the process chamber 12 and the process chamber 13. The composition of at least one party. The configuration in which the direction change rollers 94a and 94b and the nip rollers 95a and 95b are disposed in the processing chamber 13 is shown in FIG.

又,上述實施形態中,雖舉於處理室12與處理室13之間設有振動除去裝置91之構成為例進行了說明,但並不限於此。 Further, in the above-described embodiment, the configuration in which the vibration removing device 91 is provided between the processing chamber 12 and the processing chamber 13 has been described as an example, but the invention is not limited thereto.

例如,亦可係於處理室12與處理室13之間,除了振動除去裝置91以外,如圖14所示設有抑制異物之移動之異物移動抑制裝置84或限制氣體及液體之流體移動限制裝置85、調整基板S之調溫裝置(基板調溫部)86等之構成。 For example, it may be between the processing chamber 12 and the processing chamber 13, and a foreign matter movement suppressing device 84 for suppressing movement of foreign matter or a fluid moving restricting device for restricting gas and liquid may be provided as shown in FIG. 14 in addition to the vibration removing device 91. 85. The configuration of the temperature adjustment device (substrate temperature adjustment unit) 86 of the substrate S is adjusted.

圖14中,從基板S之搬送方向上游側往下游側依序配置有異物移動抑制裝置84、流體移動限制裝置85、調溫裝置86及振動除去裝置91。又,上述之振動除去裝置91、異物移動抑制裝置84、流體移動限制裝置85、調溫裝置86之至少一個亦可配置於處理室12與處理室13之間。 In FIG. 14, the foreign matter movement suppression device 84, the fluid movement restriction device 85, the temperature adjustment device 86, and the vibration removal device 91 are arranged in this order from the upstream side to the downstream side in the conveyance direction of the substrate S. Further, at least one of the vibration removing device 91, the foreign matter movement suppressing device 84, the fluid movement restricting device 85, and the temperature regulating device 86 may be disposed between the processing chamber 12 and the processing chamber 13.

異物移動抑制裝置84具有氣簾形成部84a及載台84b。異物 移動抑制裝置84藉由氣簾形成部84a對被載台84b支承之基板S形成氣簾。藉由該氣簾除去基板S上之異物。 The foreign matter movement suppressing device 84 has an air curtain forming portion 84a and a stage 84b. foreign matter The movement suppressing device 84 forms an air curtain on the substrate S supported by the stage 84b by the air curtain forming portion 84a. The foreign matter on the substrate S is removed by the air curtain.

又,流體移動限制裝置85具有上游側滾筒85a、下游側滾筒85b及氣體噴射部85c。圖15係顯示流體移動限制裝置85之構成之俯視圖。如圖14及圖15所示,流體移動限制裝置85係對在被掛於上游側滾筒85a與下游側滾筒85b之狀態下搬送之基板S從氣體噴射部85c噴射氣體。 Further, the fluid movement restricting device 85 has an upstream side drum 85a, a downstream side drum 85b, and a gas injection portion 85c. Fig. 15 is a plan view showing the configuration of the fluid movement restricting device 85. As shown in FIG. 14 and FIG. 15, the fluid movement restricting device 85 injects gas from the gas injection portion 85c to the substrate S conveyed in the state of being hung on the upstream side drum 85a and the downstream side drum 85b.

氣體噴射部85c例如相對對被掛於上游側滾筒85a與下游側滾筒85b之狀態之基板S配置於-Y側之位置、+X側之位置及-Y方向與+X方向間之位置之至少1個位置。藉由對基板S噴射氣體,能藉由該氣體除去附著於基板S表面之液體或飄蕩於基板表面之氣體。 For example, the gas ejecting portion 85c is disposed at a position on the -Y side, a position on the +X side, and a position between the -Y direction and the +X direction with respect to the substrate S in a state of being hung on the upstream side drum 85a and the downstream side drum 85b. 1 location. By ejecting the gas to the substrate S, the gas adhering to the surface of the substrate S or the gas floating on the surface of the substrate can be removed by the gas.

又,如圖14所示,調溫裝置86進行已除去流體之基板S之溫度調整。調溫裝置86具有滾筒86a及調溫機構86b。上述實施形態中,雖舉於方向轉換滾筒94a設有溫度調整機構94c之構成為例進行了說明,但係能與其另外地調整基板S之溫度。 Further, as shown in FIG. 14, the temperature adjustment device 86 performs temperature adjustment of the substrate S from which the fluid has been removed. The temperature adjustment device 86 has a drum 86a and a temperature adjustment mechanism 86b. In the above embodiment, the configuration in which the temperature changing mechanism 94c is provided in the direction changing roller 94a has been described as an example, but the temperature of the substrate S can be adjusted separately.

此外,異物移動抑制裝置84、流體移動限制裝置85、調溫裝置86、振動除去裝置91之各個不限於配置於處理室12與處理室13之間之構成,亦可係配置於處理室11與處理室12之間之構成。 Further, each of the foreign matter movement suppressing device 84, the fluid movement restricting device 85, the temperature regulating device 86, and the vibration removing device 91 is not limited to being disposed between the processing chamber 12 and the processing chamber 13, and may be disposed in the processing chamber 11 and The configuration between the processing chambers 12.

又,上述實施形態中,雖舉將處理室11~13於Z方向階層配置之構成為例進行了說明,但並不限於此。例如,亦可係將處理室11~13於X方向或Y方向排列配置之構成。又,在處理室11~13分別形成為獨立之裝置或工廠時,亦能適用本發明。 Further, in the above-described embodiment, the configuration in which the processing chambers 11 to 13 are arranged in the Z direction is described as an example, but the present invention is not limited thereto. For example, the processing chambers 11 to 13 may be arranged in the X direction or the Y direction. Further, the present invention can also be applied to the case where the processing chambers 11 to 13 are each formed as an independent device or factory.

又,上述實施形態中,雖係以基板S之被處理面Sa朝向垂 直於重力方向之方向(與XY平面平行之方向)搬送基板S之構成,但並不限於此,亦可係在基板S之被處理面Sa朝向平行於重力方向之方向之狀態(使基板S立起之狀態)下搬送基板S之構成。此情形下,張力消除機構92及93中使基板S彎曲向重力方向時,能為使基板S之被處理面Sa局部地朝向垂直於重力方向之方向之構成。 Further, in the above embodiment, the processed surface Sa of the substrate S is oriented downward. The substrate S is transported in a direction perpendicular to the direction of gravity (a direction parallel to the XY plane). However, the present invention is not limited thereto, and the processed surface Sa of the substrate S may be oriented in a direction parallel to the direction of gravity (the substrate S is made). In the up state, the substrate S is transported. In this case, when the substrate S is bent in the direction of gravity in the tension eliminating mechanisms 92 and 93, the processed surface Sa of the substrate S may be partially oriented in a direction perpendicular to the direction of gravity.

又,圖2中,作為處理裝置10,雖以塗布裝置、加熱裝置、曝光裝置、顯影裝置、洗淨裝置、鍍敷裝置之組合為例進行了說明。但並不限定於此組合。又,亦可使此處理裝置10於X方向或Y方向配置複數個。亦即,經由導引滾筒R30使基板S搬送至其他處理裝置10之塗布裝置,藉由反覆進行上述之動作,於基板S依序形成顯示元件之構成要素。此情形下,在配置複數個處理裝置10時,亦可使複數個曝光裝置EX之曝光精度或解析度互異。在將此處理裝置10於Y方向配置複數個時,如上述,能使用如圖5所示之複數個加熱單元50、亦即將相鄰之加熱單元50連結之構成。 In addition, in FIG. 2, as a processing apparatus 10, the combination of a coating apparatus, a heating apparatus, an exposure apparatus, a developing apparatus, a washing apparatus, and a plating apparatus was demonstrated as an example. However, it is not limited to this combination. Further, the processing device 10 may be arranged in plural in the X direction or the Y direction. That is, the substrate S is transported to the coating device of the other processing apparatus 10 via the guide roller R30, and by repeating the above-described operations, the constituent elements of the display element are sequentially formed on the substrate S. In this case, when a plurality of processing apparatuses 10 are arranged, the exposure precision or resolution of the plurality of exposure apparatuses EX may be different. When a plurality of the processing apparatuses 10 are arranged in the Y direction, as described above, a plurality of heating units 50 as shown in FIG. 5 and a heating unit 50 adjacent thereto can be connected.

本實施形態中,亦可為將處理室11~13之室內壓力分別獨立調整之構成。 In the present embodiment, the indoor pressures in the processing chambers 11 to 13 may be independently adjusted.

例如,最好係將處理室13之室內壓力調整成較處理室12之室內壓力高,以防附著於光學系表面之異物(微粒)從其他處理室、例如處理室12侵入收容曝光裝置EX之處理室13。又,在處理室11由於使用複數個液體,因此最好係將處理室13之室內壓力調整成較處理室12之室內壓力高,以防此等液體侵入處理室12內。 For example, it is preferable to adjust the pressure in the chamber of the processing chamber 13 to be higher than the pressure in the chamber 12 so as to prevent foreign matter (fine particles) adhering to the surface of the optical system from intruding into the exposure apparatus EX from other processing chambers, for example, the processing chamber 12. Processing chamber 13. Further, since the processing chamber 11 uses a plurality of liquids, it is preferable to adjust the indoor pressure of the processing chamber 13 to be higher than the indoor pressure of the processing chamber 12 to prevent such liquid from entering the processing chamber 12.

又,3個處理室之壓力,亦可為3個處理室中使處理室13 之壓力為最高,使處理室11之壓力為最低,將處理室12設定為處理室13與處理室11間之壓力。 Moreover, the pressure of the three processing chambers may also be the processing chambers 13 in the three processing chambers. The pressure is the highest, the pressure in the processing chamber 11 is the lowest, and the processing chamber 12 is set as the pressure between the processing chamber 13 and the processing chamber 11.

10‧‧‧處理裝置 10‧‧‧Processing device

11~13‧‧‧處理室 11~13‧‧‧Processing room

14‧‧‧分隔部 14‧‧‧Departure

14a~14d‧‧‧分隔構件 14a~14d‧‧‧ partition members

15~19‧‧‧連接部 15~19‧‧‧Connecting Department

20‧‧‧搬送裝置 20‧‧‧Transporting device

41‧‧‧塗布裝置 41‧‧‧ Coating device

42‧‧‧顯影裝置 42‧‧‧Developing device

43‧‧‧洗淨裝置 43‧‧‧cleaning device

44‧‧‧鍍敷裝置 44‧‧‧ plating device

45‧‧‧回收管 45‧‧‧Recycling tube

50‧‧‧加熱單元 50‧‧‧heating unit

51~53‧‧‧加熱裝置 51~53‧‧‧ heating device

90‧‧‧開口部 90‧‧‧ openings

91‧‧‧振動除去裝置 91‧‧‧Vibration removal device

92,93‧‧‧張力消除機構 92,93‧‧‧Tensile Elimination Mechanism

R1~R30‧‧‧導引滾筒 R1~R30‧‧‧ Guide roller

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

Claims (14)

一種基板處理裝置,係一邊將具有可撓性之帶狀基板搬送於長邊方向、一邊於前述基板上形成電子元件,其具備:第一處理室,用以使用液體對前述基板進行濕式處理;第二處理室,藉由分隔構件而與前述第一處理室分隔,用以使前述基板乾燥;第三處理室,藉由分隔構件而與前述第二處理室分隔,用以將前述電子元件之圖案曝光於前述基板;以及搬送裝置,沿著通過形成於前述分隔構件之各個之連接部或開口部將前述基板依前述第一處理室、前述第二處理室、前述第三處理室之順序搬送於長邊方向的第一搬送路徑、以及使在前述第三處理室被曝光處理後之前述基板通過前述連接部或前述開口部而再度被搬送至前述第一處理室的第二搬送路徑,導引前述基板。 A substrate processing apparatus that forms an electronic component on a substrate while transporting a flexible strip substrate in a longitudinal direction, and includes a first processing chamber for wet processing the substrate using a liquid a second processing chamber separated from the first processing chamber by a partition member for drying the substrate; and a third processing chamber separated from the second processing chamber by a partition member for using the electronic component The pattern is exposed to the substrate; and the transfer device sequentially follows the first processing chamber, the second processing chamber, and the third processing chamber along a connecting portion or an opening formed in each of the partition members a first transport path that is transported in the longitudinal direction, and a second transport path that is transported to the first processing chamber by the substrate after the exposure processing in the third processing chamber through the connection portion or the opening portion. The aforementioned substrate is guided. 如申請專利範圍第1項之基板處理裝置,其中,於前述第一處理室,收容在前述曝光處理前之前述基板形成前述液體之塗布膜之塗布裝置、以及以前述液體處理前述曝光處理後之前述基板之濕式處理裝置。 The substrate processing apparatus according to claim 1, wherein the first processing chamber houses a coating device that forms the coating film of the liquid before the exposure processing, and the exposure processing after the liquid treatment A wet processing apparatus for the aforementioned substrate. 如申請專利範圍第2項之基板處理裝置,其中,前述第一搬送路徑設定為前述基板依收容於前述第一處理室之前述塗布裝置、前述第二處理室、以及前述第三處理室之順序被搬送,前述第二搬送路徑設定為在前述第三處理室被曝光處理後之前述基板被搬送至收容於前述第一處理室之前述濕式處理裝置。 The substrate processing apparatus according to claim 2, wherein the first transport path is set in order of the substrate in the coating device, the second processing chamber, and the third processing chamber that are housed in the first processing chamber The second transport path is set such that the substrate after the exposure processing in the third processing chamber is transported to the wet processing apparatus housed in the first processing chamber. 如申請專利範圍第3項之基板處理裝置,其中,前述濕式處理裝置,係使用顯影液使前述基板顯影之顯影裝置、使用洗淨液洗淨前述基板之洗淨裝置、以及使用鍍敷液於前述基板上形成圖案之鍍敷裝置之任一者。 The substrate processing apparatus according to claim 3, wherein the wet processing apparatus is a developing apparatus that develops the substrate using a developing solution, a cleaning apparatus that washes the substrate using a cleaning liquid, and a plating liquid. Any of the plating devices that form a pattern on the substrate. 如申請專利範圍第4項之基板處理裝置,其中,前述搬送裝置,具備 用以形成第三搬送路徑之複數個滾筒,該第三搬送路徑,係使經由前述第二搬送路徑而以前述濕式處理裝置處理後之前述基板通過前述連接部或前述開口部而再度搬送至前述第二處理室的路徑。 The substrate processing apparatus of claim 4, wherein the transfer device is provided a plurality of rollers for forming a third transport path, wherein the substrate that has been processed by the wet processing device via the second transport path is again transported to the substrate through the connection portion or the opening portion The path of the aforementioned second processing chamber. 如申請專利範圍第5項之基板處理裝置,其中,於前述第二處理室,收容加熱經由前述第一搬送路徑搬送之前述基板以使以前述塗布裝置形成之前述塗布膜乾燥的第一加熱裝置、以及加熱經由前述第三搬送路徑搬送之前述基板以使以前述濕式處理裝置處理後之前述基板乾燥的第二加熱裝置。 The substrate processing apparatus according to claim 5, wherein the second processing chamber houses a first heating device that heats the substrate conveyed through the first transfer path to dry the coating film formed by the coating device And a second heating device that heats the substrate conveyed through the third transfer path to dry the substrate processed by the wet processing device. 如申請專利範圍第1至6項中任一項之基板處理裝置,其中,前述搬送裝置具備調整機構,該調整機構係減低經由前述第一搬送路徑搬入前述第三處理室之前述基板或從前述第三處理室在前述第二搬送路徑被搬出之前述基板的張力。 The substrate processing apparatus according to any one of claims 1 to 6, wherein the transfer device includes an adjustment mechanism that reduces the substrate carried into the third processing chamber via the first transfer path or from the aforementioned The tension of the substrate in which the third processing chamber is carried out in the second transport path. 如申請專利範圍第1至6項中任一項之基板處理裝置,其中,於前述第二處理室與前述第三處理室之間、或前述第一處理室與前述第二處理室之間,設有除去前述基板上之異物之異物移動抑制裝置與除去附著於前述基板表面之液體之流體移動限制裝置的至少一個。 The substrate processing apparatus according to any one of claims 1 to 6, wherein between the second processing chamber and the third processing chamber, or between the first processing chamber and the second processing chamber, At least one of a foreign matter movement suppressing means for removing foreign matter on the substrate and a fluid movement restricting means for removing a liquid adhering to the surface of the substrate is provided. 如申請專利範圍第1至6項中任一項之基板處理裝置,其中,將前述第一處理室、前述第二處理室、以及前述第三處理室於重力方向階層配置。 The substrate processing apparatus according to any one of claims 1 to 6, wherein the first processing chamber, the second processing chamber, and the third processing chamber are arranged in a layer in a gravity direction. 一種元件製造方法,係一邊將具有可撓性之帶狀片基板搬送於長邊方向、一邊於前述片基板上形成電子元件,其包含:在依序施加用以使形成有液體之感光性膜之前述片基板乾燥之第一加熱處理、將既定圖案形成於該第一加熱處理後之前述膜之曝光處理、在該曝光處理後使用既定液體材料處理前述片基板之濕式處理、以及在該濕式處理後使前述片基板乾燥之第二加熱處理時,進行前述濕式處理之濕式處理部收容於第一處理室,進行前述第一加 熱處理之加熱處理部與進行前述第二加熱處理之加熱處理部收容於藉由分隔部而與前述第一處理室分隔之第二處理室,進行前述曝光處理之曝光處理部收容於藉由分隔部而與前述第二處理室分隔之第三處理室;通過形成於前述分隔部之各個之連接部或開口部,從前述第二處理室依前述第三處理室、前述第一處理室、以及前述第二處理室之順序將前述片基板搬送於長邊方向。 A device manufacturing method for forming an electronic component on a sheet substrate while transporting a flexible strip substrate in a longitudinal direction, comprising: sequentially applying a photosensitive film on which a liquid is formed a first heat treatment for drying the sheet substrate, an exposure treatment for forming the predetermined pattern on the film after the first heat treatment, a wet treatment for treating the sheet substrate with a predetermined liquid material after the exposure treatment, and In the second heat treatment for drying the sheet substrate after the wet treatment, the wet processing unit that performs the wet treatment is housed in the first processing chamber, and the first addition is performed. The heat treatment portion for heat treatment and the heat treatment portion for performing the second heat treatment are housed in a second processing chamber partitioned from the first processing chamber by a partition portion, and the exposure processing portion that performs the exposure processing is accommodated in the partition portion. And a third processing chamber partitioned from the second processing chamber; and a second connecting chamber, the first processing chamber, and the foregoing from the second processing chamber through a connecting portion or an opening formed in each of the partition portions The order of the second processing chamber transports the sheet substrate in the longitudinal direction. 如申請專利範圍第10項之元件製造方法,其中,收容於前述第一處理室之前述濕式處理部,係使用顯影液使前述片基板顯影之顯影裝置、使用洗淨液洗淨前述片基板之洗淨裝置、以及使用鍍敷液於前述片基板上形成圖案之鍍敷裝置之任一者。 The method of manufacturing a component according to claim 10, wherein the wet processing unit accommodated in the first processing chamber is a developing device that develops the sheet substrate with a developing solution, and washes the sheet substrate with a cleaning solution. Any of the cleaning device and the plating device that forms a pattern on the sheet substrate using a plating solution. 如申請專利範圍第11項之元件製造方法,其中,將在前述第一加熱處理前將前述液體之感光性膜形成於前述片基板上之成膜處理部收容於前述第一處理室。 The method of manufacturing a device according to claim 11, wherein the film forming processing unit that forms the liquid photosensitive film on the sheet substrate before the first heat treatment is housed in the first processing chamber. 如申請專利範圍第10至12項中任一項之元件製造方法,其中,將前述第二處理室及前述第三處理室於重力方向排列配置。 The method of manufacturing a device according to any one of claims 10 to 12, wherein the second processing chamber and the third processing chamber are arranged side by side in the direction of gravity. 如申請專利範圍第13項之元件製造方法,其中,前述第一處理室,具備在前述重力方向配置於前述第二處理室及前述第三處理室下方且回收在前述濕式處理部產生之廢棄物之回收部。 The method of manufacturing a device according to claim 13, wherein the first processing chamber is disposed below the second processing chamber and the third processing chamber in the gravity direction, and is disposed in the wet processing unit. The recycling department of the object.
TW105113423A 2011-04-25 2012-04-23 Substrate processing apparatus and device manufacturing method TWI587428B (en)

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