TW201827375A - Device and method for producing glass substrate - Google Patents

Abstract

A glass substrate production device 10 according to the present invention is provided with a surface treatment unit 11 for supplying a treatment gas Ga onto one main surface of a plate-like glass, which serves as a glass substrate, to perform a specific surface treatment. The surface treatment unit 11 is provided with: a treatment gas generation unit 16; a gas supply passage 17 through which the treatment gas Ga is supplied onto one main surface of the plate-like glass; a detoxification unit 18 for subjecting the treatment gas Ga to a detoxification treatment; a gas exhaust passage 19 through which the treatment gas Ga supplied onto the one main surface is introduced into the detoxification unit 18; and a harmless gas inlet passage 20 through which a harmless gas Gb is introduced into the gas supply passage 17. Either one of the harmless gas Gb and the treatment gas Ga can be introduced into the downstream side of the gas supply passage 17 relative to a junction P1 of the harmless gas inlet passage 20 and the gas supply passage 17.

Description

Device and method for manufacturing glass substrate

[0001] The present invention relates to a manufacturing apparatus and a manufacturing method for a glass substrate, and more particularly, to a technology for performing a surface treatment with a processing gas on the surface of a plate-shaped glass that becomes a glass substrate.

[0002] As is known, with regard to image display devices in recent years, flat panel displays represented by liquid crystal displays (LCD), plasma displays (PDP), field emission displays (FED), organic EL displays (OLED), etc. (hereinafter only (Referred to as FPD) is the mainstream. With regard to these FPDs, since weight reduction is promoted, the glass substrates used for FPDs have also been required to be thinner. [0003] The aforementioned glass substrate is obtained by cutting, for example, a sheet-shaped glass (ribbon-shaped glass) formed into a band shape by a sheet glass forming method represented by various down-draw methods, for example. A predetermined size is further cut at both ends of the width direction of the cut sheet glass (a direction parallel to the main surface of the sheet glass sheet and orthogonal to the length direction. The same applies thereafter). The surface is obtained by polishing. [0004] Furthermore, when such a glass substrate is manufactured, there may be a problem that static electricity is charged during the manufacturing process. That is, the glass of the insulator is very easy to be charged. In the manufacturing process of the glass substrate, for example, when the glass substrate is placed on a mounting table and a predetermined process is performed, the glass may be caused by the contact and peeling of the glass substrate and the mounting table. The substrate is charged (this may be referred to as peeling charging). If a conductive object approaches a charged glass substrate, a discharge will occur, causing this discharge to cause damage to various elements formed on the main surface of the glass substrate, electrode wires constituting electronic circuits, and the glass substrate itself. (This may be called insulation damage or static electricity damage). In addition, the charged glass substrate is easily attached to the mounting table, and there is a risk that the glass substrate may be damaged if the glass substrate is strongly peeled off. These will be the cause of poor display and should be avoided as much as possible. [0005] As a means for avoiding the foregoing, for example, a predetermined processing gas may be supplied to the back surface of the glass substrate (the main surface on the side in contact with the mounting surface of the mounting table), and the back surface may be subjected to a surface treatment to thereby Method for roughening the back. As the contact area between the glass substrate and the mounting table becomes larger, the charge amount at the time of peeling tends to increase. Therefore, it is expected that the surface of the glass substrate that is in contact with the mounting surface of the mounting table may be roughened to make the glass more rough. The contact area between the substrate and the mounting table is reduced, and it is possible to suppress charging during peeling. In addition, since the rear surface of the glass substrate is smoother, it is easier to attach it to a smooth surface such as a mounting surface. As described above, the rear surface of the glass substrate is roughened, for example, to make the surface roughness of the rear surface relatively smooth. The surface has a large surface roughness, which makes it difficult to attach the glass substrate to the mounting surface. Accordingly, it is expected that the glass substrate can be prevented from being damaged during peeling. [0006] Here, as a structure capable of performing surface treatment as described above, for example, a surface treatment device described in the following Patent Document 1 includes a conveyance that conveys in a predetermined direction in a state where a glass substrate is placed. Means: The processing gas containing hydrogen fluoride gas is supplied to the back surface of the glass substrate on the conveyance path, and the supplied processing gas is discharged to an ejector of the exhaust system. Here, in the ejector, the first slit connected to the hydrogen fluoride gas source is provided at a predetermined position in the carrying direction of the glass substrate, and the second slit connected to the carrier gas source is provided on both sides of the first slit in the carrying direction. Predetermined location. In addition, the third slit connected to the exhaust system is provided at a predetermined position of the second slit closer to both sides of the carrying direction. [Prior Art Document] [Patent Document] [0007] [Patent Document 1] Japanese Patent Laid-Open No. 2014-80331

[Problems to be Solved by the Invention] 0008 [0008] During the operation of such a surface treatment device, as described in Patent Document 1, a flow of hydrogen fluoride gas (supply system and exhaust system) is formed, that is, hydrogen fluoride is used. The hydrogen fluoride gas generated by the gas source is continuously supplied to the glass substrate through the first slit (that is, the gas supply port), and the supplied hydrogen fluoride gas is then passed through a third slit (a so-called Exhaust port) to the exhaust system. However, in the case where the surface treatment device is stopped due to a certain thing and maintenance is required, before the surface treatment device is decomposed, first, it is necessary to remove the hydrogen fluoride gas which is harmful to the human body from the aforementioned gas supply system and exhaust system. . [0009] However, as described in Patent Document 1, when a structure in which a hydrogen fluoride gas source and a first slit are connected through a predetermined gas supply system is adopted, even if the generation and the generation of the hydrogen fluoride gas source by the hydrogen fluoride gas source are stopped, Supply, hydrogen fluoride gas will remain in the aforementioned gas supply system. Therefore, until the hydrogen fluoride gas remaining in the gas supply system is completely discharged, a large amount of time is required, and the waiting time for maintenance is increased. Therefore, there is a possibility that the productivity may be significantly reduced. [0010] In view of the foregoing, in the present invention, a technical problem to be solved is to perform maintenance of a surface treatment device that can safely and shortly perform surface treatment on a sheet glass using a treatment gas. [Means to Solve the Problems] [0011] The aforementioned problems can be solved by the glass substrate manufacturing apparatus of the present invention. That is, this manufacturing apparatus is provided with a surface treatment device for supplying a processing gas to one of the main surfaces of the plate-shaped glass which is a glass substrate for performing a predetermined surface treatment, and is characterized in that the surface treatment The device is provided with: a processing gas generating device for generating a processing gas; a gas supply path for supplying the processing gas to one of the main surfaces; a harmful gas removing device for performing a harmful gas treatment process on the processing gas; The processing gas on the main surface is introduced into the exhaust path of the harm removal device. The harmless gas introduction path that can introduce harmless gas into the gas supply path is integrated with the gas supply path. In addition, the term "innocuous gas" as used herein refers to a gas that excludes generally recognized types of gases that are generally harmful to the human body (gases containing harmful substances specified in the Air Pollution Law, and harmful gases), even if directly or in combination with It is substantially harmless when contacted or inhaled with the human body in the state of mixed air. [0012] Thus, in the present invention, by integrating the harmless gas introduction path that introduces the harmless gas into the gas supply path into the gas supply path, it is closer to the gas supply path than the collection position of the harmless gas introduction path and the gas supply path. On the downstream side, one of harmless gas and process gas can be introduced. According to this configuration, since only the harmless gas can be introduced into the gas supply path, the processing gas remaining at least in the gas supply path can be replaced with the harmless gas. Therefore, the operator can safely disassemble and repair the surface treatment apparatus. In addition, by adopting a form in which the harmless gas introduction path is integrated in the gas supply path, the harmless gas can be introduced into the gas supply path without using a processing gas generating device. When passing it through a precision machine such as a process gas generating device, the flow rate of the harmless gas may be restricted. However, if the harmless gas can be introduced without passing through the process gas generating device, it can be more freely. Set the introduction conditions (flow rate, pressure, temperature, etc. of the harmless gas). Therefore, for example, by setting the flow rate to be large, the process gas can be replaced with a harmless gas in a short time. [0013] The glass substrate manufacturing apparatus of the present invention may further include: a first on-off valve capable of opening and closing a harmless gas introduction path; and an opening and closing gas supply closer to an upstream side of the air supply path than a collection position. The second on-off valve of the path. Alternatively, the valve may be provided with a three-way valve. The three-way valve is provided at the collection position, and can switch the flow of the processing gas from the upstream side to the downstream side of the collection position in the gas supply path, and from the harmless gas introduction path to the collection position. Flow of harmless gas on the downstream side. [0014] In this way, the first on-off valve and the second on-off valve are provided so that one of the harmless gas and the processing gas can be simply introduced on the downstream side closer to the gas supply path than the collection position. In addition, the three-way valve is provided at the collecting position, so that it is easier to introduce harmless gas or processing gas on the downstream side closer to the gas supply path than the collecting position. [0015] In addition, the glass substrate manufacturing apparatus of the present invention may further include a processing gas branch path that branches at an upstream side closer to the gas supply path than the collection position to introduce the processing gas into the exhaust path. In addition, for example, when a second on-off valve is provided in the gas supply path, a third on-off valve may be further provided for opening and closing the processing gas branch path. [0016] As described above, by providing a process gas branch path, a process gas can be introduced into the process gas branch path (if a second on-off valve is provided, and the third on-off valve is further provided), the process gas can be switched on. During the replacement with the harmless gas, the processing gas generated in the processing gas generating device is continuously transported to the exhaust path through the processing gas branch path. Therefore, during the replacement process, it is possible to avoid the occurrence of a defect caused by the sealing of the processing gas between the processing gas generation device and the collection location in the processing gas generation device or in the gas supply path, and the replacement operation can be performed safely. [0017] In the case where the third on-off valve is provided, the glass substrate manufacturing apparatus of the present invention may further include: it is disposed closer to the exhaust path than a position where the processing gas branch path is collected in the exhaust path. On the upstream side, a fourth on-off valve that opens and closes the exhaust path. [0018] In this way, by providing an on-off valve (a fourth on-off valve) closer to the upstream side of the exhaust path than the position where the processing gas divergence path is collected in the exhaust path, it is possible to make the air supply path more advanced than the second on-off valve. The area on the downstream side and the processing space (the space exposed to the processing gas) of the plate glass are completely connected to the flow path of the processing gas (the processing gas branch path and the exhaust path on the downstream side of the fourth on-off valve). Cut off state. Therefore, for example, when the fourth on-off valve is opened to replace the processing gas with a harmless gas, the gas supply path and the processing space of the sheet glass are completely filled with the harmless gas. By closing the fourth on-off valve, it is not necessary to stop the processing gas generation device, and the surface processing device can be safely disassembled and repaired except for a part of the downstream side of the processing gas branch path and the exhaust path. [0019] Moreover, the glass substrate manufacturing apparatus of the present invention can also clean dry air for a harmless gas system. [0020] As the harmless gas, any gas can be used as long as it is substantially harmless to the human body, but it is better to clean the dry gas in consideration of the influence on the sheet glass and the cost. [0021] The aforementioned problems can be solved by the method for manufacturing a glass substrate of the present invention. That is, this manufacturing method includes a surface treatment process in which a processing gas is supplied to the surface of the plate-like glass that becomes a glass substrate to perform a predetermined surface treatment, and a surface treatment is performed while the surface treatment process is stopped. The method for maintaining and repairing the device is characterized in that in the surface treatment process, the processing gas generated by the processing gas generating device is supplied to the surface through a gas supply path, and the processing gas that has been supplied to the surface is discharged through the surface After the gas path is introduced into the detoxification device, the detoxification treatment is performed on the processing gas. During the maintenance process, the gas supply path is closed by closing the gas supply path and closer to the downstream side of the gas supply path than the position where the gas supply path is closed. Harmless gas is introduced into the path, and the processing gas passing through the gas supply path is replaced with harmless gas. [0022] Thus, in the manufacturing method of the glass substrate of the present invention, in the maintenance process, the gas supply path is closed by closing the gas supply path and being closer to the downstream side of the gas supply path than the position where the gas supply path is closed. The gas replaces the processing gas passing through the gas supply path with a harmless gas. Therefore, as with the glass substrate manufacturing apparatus of the present invention, only the harmless gas can be introduced into the gas supply path. Thereby, at least the processing gas remaining in the gas supply path can be replaced with a harmless gas, and therefore, the operator can safely disassemble the surface processing apparatus. In addition, by introducing the harmless gas closer to the downstream side of the gas supply path than the position where the gas supply path is closed, the harmless gas can be introduced into the gas supply path without passing through the processing gas generating device. Therefore, the introduction conditions (innocent gas flow rate, pressure, temperature, etc.) for introducing the innocuous gas into the gas supply path can be set freely. For example, by setting the flow rate to be large, the treatment by the innocuous gas can be performed in a short time. Gas replacement. [0023] In addition, in the manufacturing method of the glass substrate of the present invention, during the maintenance process, the gas supply path may be closer to the upstream side of the air supply path than the position where the air supply path is closed, and the air supply path may be diverted from the air supply path to the exhaust side. The path introduces a process gas. [0024] In this way, by being closer to the upstream side of the air supply path than the position where the air supply path is closed, the process gas can be diverted from the air supply path to the exhaust path, even when the air supply path is closed, While the processing gas is being replaced with a harmless gas, the processing gas generated in the processing gas generating device may be continuously delivered to the exhaust path. Therefore, during the replacement process, it is possible to avoid the occurrence of a defect caused by the sealing of the processing gas between the inside of the processing gas generation device or the processing gas generation device and the position where the gas supply path is closed, and it is safe to do so. Perform replacement work. [0025] In this case, the manufacturing method of the glass substrate of the present invention may also be configured to stop introducing the harmless gas into the gas supply path after replacing the processing gas passing through the gas supply path with the harmless gas in the maintenance process, and The exhaust path is closed closer to the upstream side of the exhaust path than the position where the process gas is diverted from the air supply path to the exhaust path. [0026] In this way, by opening and closing each flow path, it is possible to create a region on the gas supply path further downstream than the position where the gas supply path is closed, and a processing space (space exposed to the processing gas) of the sheet glass. It is in a state of being completely cut off from the flow path of the processing gas (the branch path of the processing gas from the gas supply path and the exhaust path, a region further downstream than the exhaust path is closed). Therefore, for example, when the replacement of the processing gas with the harmless gas is performed in a state where the exhaust path is opened, the point at which the aforementioned gas supply path and the processing space of the sheet glass are completely filled with the harmless gas is borrowed. By closing the exhaust path, it is not necessary to temporarily stop the generation and supply of the process gas, and in addition to the aforementioned flow path of the process gas, the surface treatment apparatus can be safely disassembled and repaired. [0027] In this case, the manufacturing method of the glass substrate of the present invention may also include a restart preparation process that further includes a surface treatment, which opens the gas supply path and introduces a processing gas toward the gas supply path, and closes the The flow path of the gas supply path is divergent, and the exhaust path is opened, thereby replacing the harmless gas with the processing gas. [0028] If the process gas is continuously introduced into the exhaust path in a state where the gas supply path is closed, it is not necessary to temporarily stop the generation of the process gas during at least the replacement operation. Therefore, as described above, after the completion of work such as maintenance, the supply path is opened while the introduction of harmless gas is stopped, the branch path of the process gas is closed, and the exhaust path is opened, thereby harmless The replacement of the gas with the processing gas makes it possible to fill the gas supply path and the exhaust path with the processing gas again in a short time. Therefore, it is possible to omit the time until the generation of the processing gas is restarted until the generation state of the processing gas is stable, and the surface treatment can be restarted quickly after the maintenance is performed. [0029] In addition, the method for manufacturing a glass substrate of the present invention may be to stop the generation of the processing gas by the processing gas generating device during the maintenance process, and stop supplying the processing gas generating device with a gas that becomes the raw material of the processing gas. The carrier gas contained in the process gas is continuously supplied to the process gas generating device. [0030] When a gas containing hydrogen fluoride gas is used as a processing gas, as a device for generating this hydrogen fluoride gas, a processing gas generating device capable of generating a plasma reaction may be used. In this case, in the processing gas generating device, a gas (raw gas) such as carbon tetrafluoride gas, which is a raw material of hydrogen fluoride gas, and a carrier gas such as nitrogen contained in water and hydrogen fluoride gas are generally supplied. Therefore, in the maintenance process, by stopping the supply of the acid gas and then supplying the carrier gas to the processing gas generating device, not only the gas path, but also the harmless gas (carrier gas) can be used to replace the processing gas inside the processing gas generating device. . Therefore, when the operation of the surface treatment device for performing surface treatment is stopped, the inside of the processing gas generating device can be prevented from being degraded due to continuous exposure to the processing gas, and the processing gas generating device can be used for a long period of time. In addition, by replacing the processing gas inside the processing gas generating device with a carrier gas, the processing gas can be completely excluded from the inside of the processing gas generating device. Thereby, even when it is necessary to replace the processing gas generating device, the processing gas generating device can be safely removed from the gas supply path. [Inventive Effect] [0031] As described above, according to the present invention, it is possible to perform maintenance of a surface treatment apparatus that performs a surface treatment on a sheet glass using a treatment gas safely and in a short time.

[First Embodiment of the Present Invention] Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 to 4. In addition, in this embodiment, as a plate glass, the case where the surface treatment of the back surface of the glass substrate cut | disconnected to the predetermined | prescribed shape formed into the strip | belt-shaped plate glass is demonstrated as an example is demonstrated. [0034] FIG. 1 shows a manufacturing apparatus 10 for a glass substrate according to a first embodiment of the present invention. This manufacturing apparatus 10 includes a surface treatment apparatus 11 that performs a predetermined surface treatment on one of the main surfaces Pa (the lower surface in FIG. 1) of the glass substrate P, and a processing tank 12 that houses the surface treatment apparatus 11. [0035] Among them, the surface processing device 11 is a device that supplies a processing gas Ga to one of the main surfaces Pa of the glass substrate P and performs a predetermined surface treatment, and includes a plug-in for the glass substrate P to be processed. Path 13; opening to the gas supply port 14 of the insertion path 13; opening to the exhaust port 15 of the insertion path 13 at a position different from the gas supply port 14; a processing gas generating device 16 for generating a processing gas Ga; A gas supply path 17 that connects the gas generating device 16 to the gas supply port 14; a harm removal device 18 that performs a detoxification process on the processing gas Ga; an exhaust gas path 19 that connects the exhaust port 15 to the harm removal device 18; and will be harmless The gas Gb is introduced into the harmless gas introduction path 20 of the gas supply path 17. In this embodiment, in addition to the above-mentioned requirements, the surface processing apparatus 11 includes a processing gas branching path 21 that branches from the gas supply path 17 and introduces the processing gas Ga to the exhaust path 19. In addition, on the upstream side of the harmless gas introduction path 20, a harmless gas introduction device 22 such as a compressor is arranged, and the supply and stop of the harmless gas Gb can be operated. [0036] The harmless gas introduction path 20 is provided with a first on-off valve 23 for opening and closing the harmless gas introduction path 20. This makes it possible to switch the introduction and stop of the harmless gas Gb to the gas supply path 17. [0037] A second on-off valve 24 for opening and closing the gas supply path 17 is provided on the gas supply path 17 on the upstream side from the collection position P1 of the harmless gas introduction path 20. Thereby, the introduction and stop of the processing gas Ga to the gas supply path 17 can be switched. [0038] The processing gas branching path 21 is further upstream than the position where the second on-off valve 24 is provided in the gas supply path 17, and branches from the gas supply path 17 to be connected to the exhaust path 19. Thereby, the processing gas Ga generated in the processing gas generation device 16 can be bypassed to the exhaust path 19 and the harm removal device 18 located on the downstream side without passing through the second on-off valve 24. [0039] In this embodiment, here, the processing gas branch path 21 is provided with a third on-off valve 25 for opening and closing the processing gas branch path 21. Thereby, the introduction and stop of the processing gas Ga to the exhaust path 19 can be switched. [0040] The type and composition of the processing gas Ga may be arbitrary as long as a predetermined surface treatment (for example, roughening by corrosion) can be performed on the glass substrate P, and for example, an acid gas containing hydrogen fluoride gas or the like can be used. In this case, the processing gas generating device 16 introduces a tetrafluorocarbon gas that is a gas (raw gas) Fa that is a raw material of the processing gas Ga, water that is also a raw material fluid Fc, and nitrogen that is a carrier gas Fb (see FIG. 1). Further, by generating a plasma reaction inside the processing gas generating device 16, a processing gas Ga containing a hydrogen fluoride gas and a carrier gas Fb can be generated. [0041] As described above, the kind and composition of the harmless gas Gb may be substantially harmless to the human body as described above. For example, clean dry air is preferably used from the viewpoints of cleanliness and cost. Of course, it is not limited to clean dry air, and air other than clean dry air, such as nitrogen and argon, may be used as the treated air (dry air), or untreated air (outside air) may be used directly. [0042] Next, the sequence of surface treatment and maintenance performed by using the surface treatment device 11 having the above-mentioned structure and the function and effect of the present invention will be described based on FIGS. 2 to 4. [0043] That is, as shown in FIG. 2, the method for manufacturing a glass substrate according to this embodiment includes a surface treatment process S1 and a maintenance process S2. Among them, in the surface treatment process S1, a processing gas Ga is supplied to a glass substrate P as a sheet glass, a predetermined surface treatment is performed on the glass substrate P, and the supplied processing gas Ga is degassed and exhausted. In the maintenance process S2, the gas flow path is closed, and the gas supply path 17 is closed (refer to FIG. 1), which is further downstream than the position where the gas supply path 17 is closed (the position where the second on-off valve 24 is provided in FIG. 1). The harmless gas Gb is introduced into the gas supply path 17, thereby forming a flow of a gas in which the processing gas Ga is replaced with the harmless gas Gb. Hereinafter, each process will be described in detail. [0044] (S1) Surface treatment process In this process S1, as shown in FIG. 3, the first on-off valve 23 is closed, the second on-off valve 24 is opened, and the third on-off valve 25 is closed. Thereby, the processing gas Ga generated by the processing gas generating device 16 is introduced into the gas supply path 17 and is released from the gas supply port 14 located at the downstream end of the gas supply path 17. If the glass substrate P (omitted in FIG. 3) shown in FIG. 1 is inserted into the insertion path 13 facing the gas supply port 14, the processing gas Ga released from the gas supply port 14 is supplied to the glass substrate P. One of the main surfaces Pa (surface facing the lower surface of the air supply port 14) is subjected to a predetermined surface treatment. The processing gas Ga supplied to the glass substrate is sucked into the exhaust path 19 through the exhaust port 15 (two in this embodiment) for the insertion path 13 at a position different from the air supply port 14 and is introduced into A detoxification device 18 located on the downstream side of the exhaust path 19. The introduced treatment gas Ga is detoxified by the detoxification device 18, and is discharged to the outside of the detoxification device 18 with the harmful substances removed. [0045] In addition, since the harmless gas introduction path 20 is closed by the first on-off valve 23, in the state shown in FIG. 3, there is no risk that the harmless gas Gb will enter the gas supply path 17 and affect the surface treatment. . In addition, there is no possibility that the processing gas Ga leaks to the outside through the harmless gas introduction path 20. [0046] The processing gas branch path 21 is closed by the third on-off valve 25. Therefore, in the state shown in FIG. 3, the flow rate of the processing gas Ga that should be introduced into the gas supply path 17 does not decrease, and it is correct. There is a risk that the surface treatment will have an impact. [0047] (S2) Maintenance Process As described above, the glass substrate P is subjected to a predetermined surface treatment while the surface treatment device 11 is being operated. In addition, for some reason, there is a case where it is necessary to stop the surface treatment and disassemble the surface treatment device 11, and the surface treatment device 11 is maintained by the following processing (operation). That is, when maintenance is started, as shown in FIG. 4, when the maintenance is started, first, the second on-off valve 24 is closed, and the third on-off valve 25 is opened. Then, the first on-off valve 23 is opened again. As a result, the supply of the processing gas Ga to at least the downstream side of the second on-off valve 24 among the gas supply paths 17 is stopped, and the harmless gas Gb is newly introduced into the gas supply path 17 further downstream than the collection position P1. Therefore, the processing gas Ga flowing through the gas supply path 17, the insertion path 13, and the exhaust path 19 is discharged to the detoxification device 18 in the form of being squeezed out by the harmless gas Gb, thereby excluding the processing gas branch path 21 The processing gas Ga in the surface processing apparatus 11 is replaced with a harmless gas Gb. Therefore, the operator can safely disassemble the surface treatment apparatus 11 and perform maintenance such as status confirmation and maintenance. Further, as described above, by providing the harmless gas introduction path 20, the harmless gas Gb can be introduced into the gas supply path 17 without passing through the processing gas generating device 16, so that the introduction conditions of the harmless gas Gb can be set more freely ( Flow, pressure, temperature, etc.). Therefore, for example, by setting the flow rate to be large, replacement of the processing gas Ga by the harmless gas Gb can be performed in a short time. [0048] The third on-off valve 25 is opened to form a state in which the processing gas Ga can be supplied to the processing gas branch path 21 branched on the upstream side of the gas supply path 17 than the second on-off valve 24. Therefore, for example, in the case where the generation and supply of the processing gas Ga by the processing gas generating device 16 is continuously performed, as shown in FIG. 4, the processing gas Ga passes through the processing gas branch path 21 and further exhausts toward the exhaust path 19. Device 18 is introduced. Therefore, during the replacement process described above, it is possible to avoid a defect caused by the sealing of the processing gas Ga inside the processing gas generating device 16 or in the gas supply path 17 between the processing gas generating device 16 and the second on-off valve 24. The result is a safe replacement operation. [0049] In the above, the glass substrate manufacturing apparatus 10 and manufacturing method according to the first embodiment of the present invention have been described. However, these manufacturing apparatuses 10 and manufacturing methods may of course take any form within the scope of the present invention. [Second Embodiment of the Present Invention] FIG. 5 is a flow path structure diagram of a manufacturing apparatus 30 of a second embodiment, and FIG. 6 is a flowchart showing a sequence of a manufacturing method (surface treatment and maintenance) using the manufacturing apparatus 30. flow chart. As shown in FIG. 5, this manufacturing device 30 is provided with a surface treatment device 31 having a flow path structure different from that of the first embodiment. Specifically, the exhaust path 19 is further upstream than the collection position P2 of the process gas branch path 21. A fourth on-off valve 26 for opening and closing the exhaust path 19 is provided on the side. The other configurations are the same as those of the manufacturing apparatus 10 (surface treatment apparatus 11) of the first embodiment, and therefore detailed descriptions are omitted here. [0051] In addition, as shown in FIG. 6, the method for manufacturing a glass substrate according to this embodiment includes a surface treatment process S1 and a maintenance process S2. The details of the maintenance process S2 are different from the manufacturing method of the first embodiment. That is, the maintenance process S2 of the present embodiment includes: in a state in which the air supply path 17 is closed and the exhaust path 19 is opened, harmless gas is introduced into the air supply path 17 further downstream than the second on-off valve 24. Gb, the harmless gas introduction step S21 in which the processing gas Ga is replaced with the harmless gas Gb; and after the supply of the harmless gas Gb is stopped, the exhaust path 19 is closed further upstream than the collection position P2 of the process gas branch path 21 Step S22 of dividing the flow path of the processing gas Ga and the flow path of the harmless gas Gb completely. The following description focuses on the details of each step. [0052] (S1) In this process, as shown in FIG. 7, the first on-off valve 23 is closed and the second on-off valve 24 is opened, the third on-off valve 25 is closed, and the fourth on-off valve 26 is opened. status. Thereby, the processing gas Ga generated by the processing gas generating device 16 is introduced into the gas supply path 17 and is released from the gas supply port 14 located at the downstream end of the gas supply path 17. If the glass substrate P (omitted in FIG. 7) shown in FIG. 1 is inserted into the insertion path 13 facing the gas supply port 14, the processing gas Ga released from the gas supply port 14 is supplied to the glass substrate P. One of the main surfaces Pa (surface facing the lower surface of the air supply port 14) is subjected to a predetermined surface treatment. In addition, since the fourth on-off valve 26 provided in the exhaust path 19 is opened, the processing gas Ga supplied to the glass substrate P is passed through the insertion path 13 through a surface different from the gas supply port 14. The exhaust ports 15 (two in this embodiment) are sucked into the exhaust path 19 and are introduced into the harm removal device 18 located on the downstream side of the exhaust path 19. The introduced treatment gas Ga is detoxified by the detoxification device 18, and is discharged to the outside of the detoxification device 18 with the harmful substances removed. [0053] In addition, since the harmless gas introduction path 20 is closed by the first on-off valve 23, in the state shown in FIG. 7, there is no risk that the harmless gas Gb will enter the gas supply path 17 and affect the surface treatment. . In addition, there is no possibility that the processing gas Ga leaks to the outside through the harmless gas introduction path 20. [0054] In addition, since the processing gas branch path 21 is closed by the third on-off valve 25, in the state shown in FIG. There is a risk that the surface treatment will have an impact. [0052] (S2) Maintenance process (S21) Non-hazardous gas introduction step. In this embodiment, for some reason, it is necessary to stop the surface treatment and perform the maintenance of the surface treatment device 31. The following is performed. Processing (action). That is, in the step of replacing the processing gas Ga with the harmless gas Gb, as shown in FIG. 8, first, the second on-off valve 24 is closed, and the third on-off valve 25 is opened. Then, the first on-off valve 23 is opened again. The fourth on-off valve 26 is opened. Thereby, the supply of the processing gas Ga to at least the downstream side from the second on-off valve 24 in the gas supply path 17 is stopped, and the harmless gas Gb is newly introduced to the downstream side from the collection position P1. Therefore, the processing gas Ga flowing through the gas supply path 17, the insertion path 13, and the exhaust path 19 is discharged to the detoxification device 18 in the form of being squeezed out by the harmless gas Gb, thereby excluding the processing gas branch path 21 The processing gas Ga in the surface processing apparatus 11 is replaced with a harmless gas Gb. Therefore, the operator can safely disassemble the surface treatment device 11 and perform maintenance. [0056] Furthermore, by opening the third on-off valve 25, a state in which the processing gas Ga can be supplied to the processing gas branch path 21 branched on the upstream side of the gas supply path 17 than the second on-off valve 24 is formed. Therefore, for example, in the case where the generation and supply of the processing gas Ga by the processing gas generation device 16 are continuously performed, as shown in FIG. 8, the processing gas Ga passes through the processing gas branch path 21 and further exhausts toward the exhaust path 19. Device 18 is introduced. Therefore, the replacement operation can be performed without stopping the generation and supply of the processing gas Ga by the processing gas generating device 16. [0057] (S22) Flow path division step In step S21, the harmless gas Gb is introduced into the gas supply path 17, and the gas supply path 17 and the insertion path 13 and the exhaust path 19 are replaced with the harmless gas Gb, and then implemented. This step. That is, as shown in FIG. 9, the first on-off valve 23 is closed and the supply of the innocuous gas Gb to the gas supply path 17 is stopped, and the fourth on-off valve 26 is closed to collect the branched path 21 in the exhaust path 19 more than the processing gas branch path 21. The position P2 seals the flow of the exhaust path 19 further upstream. The second on-off valve 24 is in a closed state, and the third on-off valve 25 is in an opened state. As a result, the region of the air supply path 17 further downstream than the second on-off valve 24, and the region of the insertion path 13 and the exhaust path 19 serving as the processing space for the glass substrate are more upstream than the fourth on-off valve 26. It is in a state of being completely cut off from the process gas branching path 21 and the exhaust path 19 in a region further downstream than the fourth on-off valve 26. In other words, the flow path of the surface processing apparatus 31 is formed in a state divided into a space where only the harmless gas Gb exists and a space where only the processing gas Ga exists. For example, when a flow path structure as shown in FIG. 4 is adopted, if the flow rate or fluid pressure of the harmless gas Gb is set to be larger than the flow rate or fluid pressure of the processing gas Ga, the processing gas Ga can be prevented from diverging from the processing gas. The gathering position P2 of 21 is flowing backward toward the upstream side of the exhaust path 19, but in a state where it cannot be completely shut off, even a slight amount cannot completely rule out the possibility that the processing gas Ga flows into the supply path 17 side . On the other hand, if the manufacturing apparatus 30 according to this embodiment is used, at the time point when the processing space (the insertion path 13) of the gas supply path 17 and the glass substrate is completely filled with the harmless gas Gb, The fourth on-off valve 26 is closed, and even if the harmless gas Gb is replaced while the generation and supply of the processing gas Ga is continuously performed, the possibility of the operator contacting the processing gas Ga can be completely eliminated, and the gas can be safely decomposed. The surface treatment device 31 performs confirmation work, maintenance, and the like. [0058] [Third embodiment of the present invention] Next, a third embodiment of the present invention will be described mainly with reference to FIG. 10. In addition, in this embodiment, the manufacturing apparatus used is the manufacturing apparatus 30 shown in FIG. [0059] That is, as shown in FIG. 10, the method for manufacturing a glass substrate according to this embodiment includes a surface treatment process S1, a maintenance process S2, and a restart preparation process S3 for surface treatment. The surface treatment process S1 and the maintenance process S2 are the same as those in the second embodiment. Therefore, in the following description, only the restart preparation process S3 for the surface treatment will be described in detail. (S3) Restart preparation process for surface treatment In this process S3, from the state at the time of the previous maintenance process S2 (the state shown in FIG. 9), first, the second on-off valve 24 is opened, and the fourth on-off valve is opened. The valve 26 closes the third on-off valve 25. The first on-off valve 23 is closed. During this period, it is not necessary to stop the generation and supply of the processing gas Ga by the processing gas generation device 16, and it can be continued (see FIG. 7 for all). Thereby, as shown in FIG. 7, the processing gas Ga is introduced into the gas supply path 17, and the harmless gas Gb flowing through the gas supply path 17 is replaced by the processing gas Ga. Therefore, the processing gas Ga can be filled again in a short time. Air supply path 17 and exhaust path 19. Therefore, it is possible to omit the waiting time [from restarting the generation of the processing gas Ga to a stable state of the generation of the processing gas Ga] when the process is restarted from a state where the processing gas generating device 16 is temporarily stopped, and after maintenance, , You can restart the surface treatment immediately. [0061] [Fourth embodiment of the present invention] Next, a fourth embodiment of the present invention will be described mainly with reference to FIGS. 11 and 12. In addition, in this embodiment, the manufacturing apparatus used is the manufacturing apparatus 30 shown in FIG. [0062] As shown in FIG. 11, the method for manufacturing a glass substrate according to this embodiment includes a surface treatment process S1 and a maintenance process S2. The details of the maintenance process S2 are different from the manufacturing methods of the first to third embodiments. That is, the maintenance process S2 of this embodiment includes a carrier gas introduction step S23, which stops the generation of the processing gas Ga by the processing gas generation device 16 and stops supplying the processing gas to the processing gas generation device 16 as The source gas (the source gas Fa shown in FIG. 1 and the like) of the processing gas Ga is continuously supplied to the processing gas generating device 16 with the carrier gas Fb contained in the processing gas Ga. Since the surface treatment process S1 is the same as the second embodiment and the third embodiment, the maintenance process S2 including the carrier gas introduction step S23 will be described in detail in the following description with reference to FIG. 12. [0063] (S2) Maintenance process (S23) Carrier gas introduction step In this maintenance process S2, as in the second embodiment, first, the second on-off valve 24 is closed, and the third on-off valve 25 is opened. Then, the first on-off valve 23 is opened again. The fourth on-off valve 26 is opened. As a result, the supply of the processing gas Ga to at least the downstream side of the second on-off valve 24 among the gas supply paths 17 is stopped, and the harmless gas Gb is newly introduced into the gas supply path 17 further downstream than the collection position P1. Therefore, the processing gas Ga flowing through the gas supply path 17, the insertion path 13, and the exhaust path 19 is discharged to the detoxification device 18 in the form of being squeezed out by the harmless gas Gb, thereby excluding the processing gas branch path 21 The processing gas Ga in the surface processing apparatus 11 is replaced with a harmless gas Gb. Therefore, the operator can safely disassemble the surface treatment device 11 and perform maintenance. [0064] At this time, as shown in FIG. 12, the generation of the processing gas Ga by the processing gas generating device 16 is stopped, and the supply of the carbon tetrafluoride gas serving as the raw material of the processing gas Ga to the processing gas generating device 16 is stopped. The source gas Fa (see FIG. 1) is continuously supplied with the carrier gas Fb contained in the processing gas Ga to the processing gas generating device 16. As a result, the carrier gas Fb is introduced into the exhaust path 19 through the interior of the process gas generating device 16, a region upstream of the second on-off valve 24 in the gas supply path 17, and the process gas branch path 21. Therefore, the processing gas Ga that was still present inside the processing gas generation device 16 until now is replaced with the carrier gas Fb. The carrier gas Fb is generally an inert gas such as nitrogen, and at least in a state of being mixed with air, the carrier gas Fb is substantially harmless to the human body. Therefore, when the operation of the surface processing apparatus 31 is stopped (in the maintenance process S2), the inside of the processing gas generating apparatus 16 can be prevented from being deteriorated due to continuous exposure to the processing gas Ga, and the processing gas generating apparatus 16 can be used for a long period of time. In addition, by replacing the processing gas Ga inside the processing gas generating device 16 with the carrier gas Fb, the processing gas Ga can be completely excluded from the inside of the processing gas generating device 16. As described above, the carrier gas Fb is a very safe gas compared to the process gas Ga. Therefore, even when the process gas generating device 16 needs to be replaced, the process gas can be safely removed from the gas supply path 17 to generate the process gas.装置 16。 Device 16. [0065] Furthermore, in the above description, the first on-off valve 23 is disposed on the harmless gas introduction path 20, and the second on-off valve 24 different from the first on-off valve 23 is disposed on the gas supply path 17. The case has been described as an example, but it is not limited to this form. As long as one of the harmless gas Gb and the processing gas Ga can be introduced closer to the downstream side of the gas supply path 17 than the integration position P1 of the harmless gas introduction path 20 and the gas supply path 17, other forms may be adopted. [0066] [Fifth embodiment of the present invention] FIG. 13 shows a glass substrate manufacturing apparatus 40 as an example (a fifth embodiment of the present invention). This manufacturing device 40 is located at the collection position P1 of the harmless gas introduction path 20 and the gas supply path 17, and is provided with a three-way valve 41 for switching the flow path, instead of the first on-off valve 23 and the second on-off valve shown in FIG. Valve 24. The three-way valve 41 can be selectively switched to: the gas flow from the upstream side of the collection position P1 in the gas supply path 17 to the gas flow toward the downstream side of the gas supply path 17 after passing through the collection position P1, and the introduction of harmless gas The harmless gas Gb introduced in the path 20 passes through the collection position P1 and flows toward the downstream side of the gas supply path 17. Therefore, even when the processing gas Ga and the innocuous gas Gb are supplied together, only one of the processing gas Ga and the innocuous gas Gb is always introduced into the gas supply path 17 further downstream than the collection position P1 and the other is prevented. Import. [0067] According to this structure, as described above, only one of the processing gas Ga and the innocuous gas Gb must be introduced on the gas supply path 17 further downstream than the collection position P1. Therefore, the two can be reliably prevented. The occurrence of unwanted gas mixed in the gases Ga and Gb can further improve the reliability of the manufacturing device 40. [0068] In the above description, the second on-off valve 24 is disposed on the gas supply path 17 and the third on-off valve 25 different from the second on-off valve 24 is disposed on the process gas branch path 21. The case is described as an example, but it is not limited to this form. As long as the processing gas Ga can be introduced into one of the processing gas branching path 21 and the gas supply path 17 at a position further downstream than the processing gas branching path 21, another form may be adopted. [0069] [Sixth embodiment of the present invention] FIG. 14 shows a glass substrate manufacturing apparatus 50 as an example (sixth embodiment of the present invention). This manufacturing apparatus 50 is provided at a branch position P3 at which the process gas branch path 21 branches from the gas supply path 17 and is provided with a three-way valve 51 for switching the flow path, instead of the second on-off valve 24 and the third shown in FIG. 1. Opening and closing valve 25. This three-way valve 51 is optionally switched to a gas flow directly from the upstream side of the branch position P3 in the gas supply path 17 toward the downstream side of the gas supply path 17 through the branch position P3, and the aforementioned processing. The gas Ga flows toward the processing gas branch path 21 through the branch position P3. Therefore, even when the processing gas Ga is supplied from the processing gas generation device 16, the processing gas Ga can always be introduced to only one of the downstream side of the branch position P3 of the gas supply path 17 and the processing gas branch path 21, and Prevent importing to the other party. This is because when the process gas Ga is continuously generated (in the case of the first to third embodiments), the process gas Ga may always be introduced into only one of the gas supply path 17 and the process gas branch path 21. Therefore, by setting the three-way valve 51 at the branch position P3 and operating the three-way valve 51, when the surface treatment process S1 is performed, the gas supply path 17 side is opened, and when the maintenance process S2 is performed, the processing gas branch path 21 side is opened. Opening makes it possible to both suppress equipment costs and perform maintenance safely. [0070] In the above description, the case where a predetermined surface treatment is performed on one main surface Pa of the glass substrate P cut out from the strip-shaped plate glass has been described as an example. However, the present invention may of course be applied to the present invention. It is suitable for one of the main surfaces of the strip plate glass. That is, although not shown, when only one of the front and back surfaces of the glass film rolled up at one or both ends in the length direction after being formed into a strip shape and cut in the width direction is subjected to surface treatment, The surface treatment by the aforementioned structure can be desirably performed. In addition, the present invention can also be applied to surface treatment of the various types of plate glass, not limited to one main surface Pa, and the other main surface (the main surface Pb on the upper side in FIG. 1).

[0071]

10‧‧‧ Glass substrate manufacturing equipment

11‧‧‧Surface treatment device

12‧‧‧ treatment tank

13‧‧‧plug-in path

14‧‧‧air supply port

15‧‧‧ exhaust port

16‧‧‧Processing gas generating device

17‧‧‧Gas supply path

18‧‧‧ Harm Removal Device

19‧‧‧Exhaust path

20‧‧‧ Harmless gas introduction path

21‧‧‧ Handling gas divergence paths

22‧‧‧ Harmless gas introduction device

23‧‧‧The first on-off valve

24‧‧‧Second on-off valve

25‧‧‧The third opening and closing valve

26‧‧‧Fourth on-off valve

Ga‧‧‧Processing gas

Gb‧‧‧ Harmless gas

P‧‧‧ glass substrate

The main surface of Pa‧‧‧ side

[0032] FIG. 1 is a flow path configuration diagram showing a surface treatment apparatus according to a first embodiment of the present invention. FIG. 2 is a flowchart showing a procedure of surface treatment and maintenance using the surface treatment apparatus shown in FIG. 1. FIG. 3 is a flow path configuration diagram for explaining a sequence of surface treatment and maintenance using the surface treatment apparatus shown in FIG. 1. FIG. 4 is a flow path configuration diagram for explaining a sequence of surface treatment and maintenance using the surface treatment apparatus shown in FIG. 1. FIG. 5 is a flow path configuration diagram of a surface treatment apparatus according to a second embodiment of the present invention. FIG. 6 is a flowchart showing a procedure of surface treatment and maintenance using the surface treatment apparatus shown in FIG. 5. FIG. 7 is a flow path configuration diagram for explaining a surface treatment and maintenance procedure using the surface treatment apparatus shown in FIG. 5. FIG. 8 is a flow path configuration diagram for explaining a surface treatment and maintenance procedure using the surface treatment apparatus shown in FIG. 5. FIG. 9 is a flow path configuration diagram for explaining a surface treatment and maintenance procedure using the surface treatment apparatus shown in FIG. 5. FIG. 10 is a flowchart showing the procedure of surface treatment and maintenance of the third embodiment of the present invention. FIG. 11 is a flowchart showing the procedure of surface treatment and maintenance of the fourth embodiment of the present invention. FIG. 12 is a flow path configuration diagram for explaining a surface treatment and maintenance procedure using the surface treatment apparatus shown in FIG. 11. FIG. 13 is a flow path configuration diagram of a surface treatment apparatus according to a fifth embodiment of the present invention. FIG. 14 is a flow path configuration diagram of a surface treatment apparatus according to a sixth embodiment of the present invention.

Claims (12)

A glass substrate manufacturing apparatus is a glass substrate manufacturing apparatus provided with a surface processing apparatus that supplies a processing gas to the surface of a plate-shaped glass that becomes a glass substrate and performs a predetermined surface treatment, characterized in that: the aforementioned surface processing apparatus is provided with There are: a processing gas generating device for generating the aforementioned processing gas; a gas supply path for supplying the aforementioned processing gas to the aforementioned surface; an anti-hazard device for performing the aforementioned harm-removing treatment on the aforementioned processing gas; and the aforementioned The process gas is introduced into the exhaust path of the aforesaid detoxification device, and the harmless gas introduction path capable of introducing a harmless gas into the aforesaid gas supply path is collected in the aforesaid gas supply path. For example, the device for manufacturing a glass substrate according to item 1 of the patent application scope further includes: a first on-off valve capable of opening and closing the harmless gas introduction path; and an upstream side of the gas supply path closer to the collection position than A second on-off valve for opening and closing the aforementioned air supply path. For example, the device for manufacturing a glass substrate according to item 1 of the scope of the patent application further includes a three-way valve which is provided at the aforementioned collecting position and can switch the supply path from the upstream side to the downstream side of the aforementioned collecting position. The flow of the processing gas and the flow of the harmless gas from the harmless gas introduction path toward the downstream side of the collecting position. For example, the manufacturing apparatus for a glass substrate according to any one of claims 1 to 3 may further include a processing gas branching path which is branched closer to the upstream side of the gas supply path than the collecting position. Alternatively, the processing gas may be introduced into the exhaust path. For example, the device for manufacturing a glass substrate according to item 4 of the patent application scope further includes a third on-off valve for opening and closing the branch path of the processing gas. For example, the device for manufacturing a glass substrate according to item 4 of the scope of patent application, further comprising: a device disposed at a position closer to an upstream side of the exhaust path than a position where the processing gas branch path is collected in the exhaust path, and performing the exhaust The fourth on-off valve for opening and closing the air path. For example, the device for manufacturing a glass substrate according to any one of claims 1 to 3, wherein the harmless gas system is a clean and dry gas. A method for manufacturing a glass substrate is provided with a surface treatment process for supplying a treatment gas to a surface of a plate-shaped glass that becomes a glass substrate to perform a predetermined surface treatment; and performing the aforementioned surface while the surface treatment process is stopped. The manufacturing method of the glass substrate for the maintenance process of the processing device is characterized in that: In the surface processing process, the processing gas generated by the processing gas generating device is supplied to the surface through a gas supply path, and The processing gas supplied to the surface is introduced into the detoxification device through an exhaust path, and the decontamination treatment is performed on the processing gas. In the maintenance process, the gas supply path is closed and the gas supply path is closed relatively. The harmless gas is introduced closer to the downstream side of the gas supply path, and the processing gas passing through the gas supply path is replaced with the harmless gas. For example, in the method for manufacturing a glass substrate according to item 8 of the scope of patent application, in the maintenance process, the gas supply path is closer to the upstream side of the gas supply path than the position where the gas supply path is closed. The processing gas is introduced into the exhaust path. For example, in the method for manufacturing a glass substrate according to item 9 of the scope of patent application, in the maintenance process, after replacing the processing gas passing through the gas supply path with the harmless gas, stopping introducing the harmless gas into the gas supply path Further, the exhaust path is closed closer to the upstream side of the exhaust path than the position where the processing gas is introduced into the exhaust path from the branch from the air supply path. For example, the method for manufacturing a glass substrate according to item 10 of the application, further comprising a restart preparation process for surface treatment, which opens the aforementioned gas supply path and introduces the aforementioned processing gas toward the aforementioned gas supply path, and closes the supply from the aforementioned gas supply path. The gas path has a branched flow path, and the exhaust path is opened, thereby replacing the harmless gas with the processing gas. For example, in the method for manufacturing a glass substrate according to item 9 of the scope of patent application, in the maintenance process, the generation of the processing gas by the processing gas generating device is stopped, and the supply of the processing gas to the processing gas generating device is stopped. The raw material gas of the processing gas is continuously supplied with the carrier gas contained in the processing gas to the processing gas generating device.