TW201820435A - Wafer processing method can restrain impact taken by the corner of the chip and restrain occurrence of damages, such as cracks of chips - Google Patents
Wafer processing method can restrain impact taken by the corner of the chip and restrain occurrence of damages, such as cracks of chips Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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Abstract
Description
[0001] 本發明係關於晶圓的加工方法。[0001] The present invention relates to a method for processing a wafer.
[0002] 在對晶圓加工來製作晶片等的工程中，為了薄化於表面形成裝置的晶圓，例如，對該晶圓的背面側進行磨削。之後，利用分割該晶圓，以形成各個晶片。在分割晶圓時，首先，藉由雷射加工裝置沿著格子狀的切割道，於晶圓中形成作為分割起點的改質層，接著，使外力作用於該晶圓，使裂痕從該改質層伸長到晶圓的厚度方向。 [0003] 對於如上述之晶片等的製作工程，例如如專利文獻1所示，檢討同時實施晶圓之背面側的磨削與晶片的分割的工程。在該工程中，預先藉由雷射加工裝置沿著切割道，於晶圓中形成改質層，之後，對該晶圓的背面側進行磨削來薄化晶圓，並且使裂痕從該改質層伸長而分割晶圓。如此，同時實施分割與磨削的話，可簡略化工程。 [先前技術文獻] [專利文獻] [0004] [專利文獻1]國際公開第03/077295號[0002] In a process of processing a wafer to produce a wafer or the like, in order to thin a wafer on a surface forming apparatus, for example, the back side of the wafer is ground. Thereafter, the wafer is divided to form individual wafers. When dividing a wafer, first, a laser processing device is used to form a reforming layer in the wafer along the grid-like dicing path, and then an external force is applied to the wafer to make cracks from the modification. The mass layer extends to the thickness direction of the wafer. [0003] As for the manufacturing process of the wafer and the like as described above, for example, as shown in Patent Document 1, a process of simultaneously grinding the rear surface of the wafer and dividing the wafer is reviewed. In this process, a laser processing device is used to form a modified layer in a wafer along a dicing path in advance, and then the back side of the wafer is ground to thin the wafer, and cracks are changed from the modified layer. The substrate is elongated to divide the wafer. In this way, if division and grinding are performed at the same time, the process can be simplified. [Prior Art Document] [Patent Document] [0004] [Patent Document 1] International Publication No. 03/077295
[發明所欲解決之課題] [0005] 在此種工程中，實施磨削時裂痕從該改質層伸長，形成將晶圓分離成晶片的間隙，但是，該間隙分常狹窄。然後，形成該間隙後也持續磨削，故因為磨削時所施加的應力，所形成之各晶片會移動。 [0006] 沿著格子狀的切割道分割晶圓的話，複數晶片成為密接排列成棋盤格狀之狀態，所以，因為磨削而晶片移動的話，晶片的角部(角隅)會接觸到鄰接於其角部側之其他晶片的角部。因為晶片的角部不耐衝擊，角部與角部接觸而施加衝擊的話，該晶片容易產生缺角及裂痕等的損傷。發生損傷的晶片會成為不良品，故角部彼此的接觸特別是個問題。 [0007] 於晶圓的表面，在實施磨削之前黏合保護該表面的表面保護膠帶，於晶圓中形成該間隙之後，各晶片也被該表面保護膠帶支持。但是，一般來說，表面保護膠帶係剛性並沒有高到可完全防止磨削所致之各晶片的移動之程度，故表面保護膠帶無法防止晶片的角部彼此的接觸。 [0008] 表面保護膠帶的目的為保護晶圓的表面，不讓形成於該表面之裝置發生損傷所使用者，只要具有可發揮該功能之程度的剛性的話，則不需要其以上的剛性。因此，僅單單將表面保護膠帶黏合於晶圓，無法充分抑制晶片的移動，會產生此種問題。 [0009] 本發明係有鑑於相關問題所發明者，其目的係提供抑制晶片的角部所承受之衝擊，抑制晶片的缺角及裂痕等之損傷的發生，可分割晶圓之晶圓的加工方法。 [用以解決課題之手段] [0010] 依據本發明的一樣態，提供一種晶圓的加工方法，係具有在以交叉之複數切割道所區劃的各區域分別形成裝置的表面之晶圓的加工方法，其特徵為：具備：表面保護構件黏合步驟，係於晶圓的該表面黏合具有高剛性基材的表面保護構件；改質層形成步驟，係在實施該表面保護構件黏合步驟之後，沿著該切割道從晶圓背面側，照射對於晶圓具有透射性之波長的雷射光束，以於晶圓的內部形成改質層；及磨削步驟，係在實施該改質層形成步驟之後，從該背面側對晶圓進行磨削而使其薄化；在該改質層形成步驟或磨削步驟中，形成從該改質層至該晶圓的表面的裂痕；於該磨削步驟中，以該裂痕為邊界來分割晶圓而形成各個晶片。 [0011] 再者，於本發明的一樣態中，該複數切割道，係包含延伸於第1方向的第1切割道，與延伸於和該第1方向交叉之第2方向的第2切割道；在該改質層形成步驟中所形成之該改質層，係包含沿著該第1切割道的第1改質層，與沿著該第2切割道的第2改質層；該第1改質層，係以該第2切割道為邊界，具有一方側的第1部分，與另一方側的第2部分；在該改質層形成步驟中，該第1改質層的第1部分，與該第1改質層的第2部分，係相互錯開於第2方向所形成亦可。又，於本發明的一樣態中，高剛性基材，係硬質板亦可。 [發明的效果] [0012] 依據本發明的一樣態之晶圓的加工方法，具有高剛性基材的表面保護構件黏合於晶圓的表面。該表面保護構件，係藉由高剛性基材與糊層所構成。於是，晶圓被分割成各個晶片之後，該表面保護構件係藉由高剛性基材抵抗因磨削所產生的應力來支持各晶片，故可抑制各晶片的角部彼此的接觸。結果，可抑制晶片的缺角及裂痕等之損傷的發生。 [0013] 進而，於改質層形成步驟中形成從該改質層至晶圓表面的裂痕時，藉由具有高剛性基材的表面保護構件支持晶圓的話，可讓裂痕不蛇行而形成成為邊界的該裂痕。 [0014] 例如，將不使用高剛性基材的柔軟的膠帶使用於表面保護構件的話，在改質層形成步驟中形成改質層時，因為藉由雷射光束的照射所發生之衝擊及熱而該膠帶會移動，導致形成改質層之前發生裂痕。於是，所形成之裂痕會蛇行。形成蛇行的裂痕而該裂痕成為晶片的邊界的話，於磨削步驟中，成為晶片發生缺角等的損傷之一因。 [0015] 藉由具有高剛性基材的表面保護構件來支持晶圓的話，即使對晶圓照射雷射光束，該表面保護構件也難移動，裂痕不會在改質層的形成前形成，故以不會因改質層而蛇行之方式進行控制來形成裂痕。因此，於磨削步驟中抑制各晶片的角部彼此的接觸，抑制缺角等之損傷的發生。 [0016] 所以，藉由本發明的一樣態，可提供抑制晶片的角所承受之衝擊，抑制晶片的缺角及裂痕等之損傷的發生，可分割晶圓之晶圓的加工方法。[Problems to be Solved by the Invention] [0005] In such a process, cracks are extended from the modified layer when grinding is performed to form a gap separating the wafer into wafers. However, the gap is often narrow. Then, the grinding is continued after the gap is formed, so each wafer formed is moved due to the stress applied during the grinding. [0006] When the wafers are divided along a grid-like dicing path, the plurality of wafers are in a state of being closely arranged in a checkerboard pattern. Therefore, if the wafers are moved by grinding, the corners (corners) of the wafers will contact the adjacent ones. Corners of other wafers on its corner side. Since the corners of the wafer are not resistant to impact, if the corners are in contact with the corners and an impact is applied, the wafer is liable to cause damage such as chipping and cracks. Damaged wafers can be defective, so contact between corners is a particular problem. [0007] On the surface of the wafer, a surface protection tape is attached to protect the surface before grinding. After the gap is formed in the wafer, each wafer is also supported by the surface protection tape. However, in general, the surface protection tape is not rigid enough to completely prevent the movement of each wafer caused by grinding, so the surface protection tape cannot prevent the corners of the wafer from contacting each other. [0008] The purpose of the surface protection tape is to protect the surface of the wafer from being damaged by the user of the device formed on the surface. As long as it has a degree of rigidity capable of performing the function, the rigidity is not required. Therefore, simply adhering the surface protection tape to the wafer cannot sufficiently suppress the movement of the wafer, and this problem occurs. [0009] The present invention has been made by the inventors in view of the related problems, and an object thereof is to provide processing for suppressing the impact on the corners of a wafer, suppressing occurrence of damage such as chip corners and cracks, and processing wafers that can be divided. method. [Means for Solving the Problems] [0010] According to the same aspect of the present invention, a wafer processing method is provided. The wafer processing includes a wafer having a surface of the device formed in each region divided by a plurality of intersecting scribe lines. The method is characterized by having: a surface protection member bonding step, which is bonded to a surface of a wafer with a high-rigidity substrate, and a modified layer forming step, which is performed after the surface protection member bonding step is performed, A laser beam having a wavelength transmissive to the wafer is irradiated from the back side of the wafer along the dicing path to form a modified layer inside the wafer; and a grinding step is performed after the modified layer forming step is performed. Grinding the wafer from the back side to make it thinner; forming a crack from the modified layer to the surface of the wafer in the modified layer forming step or grinding step; and in the grinding step In this case, the wafer is divided with the crack as a boundary to form each wafer. [0011] Furthermore, in the aspect of the present invention, the plurality of cutting paths include a first cutting path extending in a first direction and a second cutting path extending in a second direction crossing the first direction. ; The modified layer formed in the modified layer forming step includes a first modified layer along the first cutting track and a second modified layer along the second cutting track; the first The 1 reforming layer is based on the second cutting line, and has a first part on one side and a second part on the other side; in the reforming layer forming step, the first part of the first reforming layer The part and the second part of the first modified layer may be formed by being offset from each other in the second direction. Moreover, in the aspect of this invention, a high rigid base material may be a rigid board. [Effects of the Invention] [0012] According to the method for processing a wafer in the same state of the present invention, a surface protection member having a highly rigid substrate is adhered to the surface of the wafer. The surface protection member is composed of a highly rigid base material and a paste layer. Then, after the wafer is divided into individual wafers, the surface protection member supports each wafer with a highly rigid base material against the stress caused by grinding, so that the corners of each wafer can be prevented from contacting each other. As a result, it is possible to suppress the occurrence of damage such as chipping and cracks of the wafer. [0013] Furthermore, when a crack is formed from the modified layer to the wafer surface in the modified layer forming step, if the wafer is supported by a surface protection member having a highly rigid base material, the crack can be formed without meandering. The crack on the border. [0014] For example, if a soft tape that does not use a highly rigid substrate is used for the surface protective member, when the modified layer is formed in the modified layer forming step, the impact and heat generated by the irradiation of the laser beam are caused. The tape will move, causing cracks to occur before the modified layer is formed. As a result, the cracks formed will snake. If a serpentine crack is formed and the crack becomes a boundary of the wafer, it may be a cause of damage such as chipping of the wafer during the grinding step. [0015] When a wafer is supported by a surface protection member having a highly rigid base material, even if the wafer is irradiated with a laser beam, the surface protection member is difficult to move, and cracks are not formed before the formation of the modified layer, so The fissures are formed in such a way that they do not meander due to the modified layer. Therefore, in the grinding step, the corners of the wafers are prevented from contacting each other, and damage such as chipping is prevented from occurring. [0016] Therefore, according to the aspect of the present invention, it is possible to provide a processing method of a wafer capable of suppressing the impact of the corner of the wafer, suppressing the occurrence of damage such as chip corners and cracks, and the like.
[0018] 針對本發明的實施形態進行說明。針對本實施形態之加工方法的被加工物即晶圓進行說明。圖1係揭示該晶圓之一例的立體圖。本實施形態的加工方法之被加工物即晶圓1，係例如由矽、SiC(碳化矽)、或者其他半導體等的材料、又或者藍寶石、玻璃、石英等的材料所成之基板。 [0019] 晶圓1的表面1a係以排列成格子狀的切割道3，區劃成複數區域。切割道3係包含延伸於第1方向1c的第1切割道3a，與延伸於和該第1方向1c交叉之第2方向1d的切割道3b。然後，於藉由切割道3區劃之各區域，形成有IC等的裝置5。晶圓1係最後沿著切割道3被分割，形成各個晶片。 [0020] 接著，針對本實施形態之晶圓1的加工方法進行說明。在該加工方法中，實施將具有高剛性基材的表面保護構件黏合於晶圓1的表面1a的表面保護構件黏合步驟。在該表面保護構件黏合步驟之後，實施形成沿著晶圓1的切割道3而成為分割起點的改質層的改質層形成步驟。在實施該改質層形成步驟之後，實施對晶圓1的背面1b進行磨削，將晶圓1分割成各個裝置晶片的磨削步驟。 [0021] 再者，在改質層形成步驟或磨削步驟中，使裂痕從該改質層延伸至晶圓1的表面1a。然後，該裂痕直至於厚度方向貫穿晶圓，或者磨削晶圓1的背面1b側而該裂痕露出於背面1b側的話，晶圓1會被分割成各個裝置晶片。 [0022] 以下，針對本實施形態之晶圓的加工方法的各步驟進行詳細說明。 [0023] 使用圖1(B)，說明表面保護構件黏合步驟。在表面保護構件黏合步驟中，將表面保護構件7黏合於晶圓1的表面1a。表面保護構件7係具有在實施本實施形態之晶圓的加工方法之期間，從各步驟及搬送等時施加的衝擊來保護晶圓1的表面1a側，防止裝置5發生損傷的功能。 [0024] 首先，針對表面保護構件黏合步驟所用之吸盤台2進行說明。吸盤台2係具有具備凹部的框體2a，與以埋入該框體2a的該凹部之多孔質構件所成的保持部4。吸盤台2係於內部具有一端連接於吸引源6的吸引路徑8，該吸引路徑8的另一端連接於該保持部4。利用使藉由該吸引源6所產生之負壓透過保持部4內的孔，作用於被載置於該保持部4上的晶圓1，讓晶圓1被吸盤台2吸引保持。 [0025] 吸盤台2係在比保持部4更下方具有加熱單元10。該加熱單元10係具有對被吸盤台2吸引保持之晶圓1進行加熱的功能。該加熱單元10具有具備凹部的框體10a。於該凹部，配置有發熱體(加熱手段)12、該發熱體12上的平板14、該發熱體12下的斷熱材16。 [0026] 該發熱體12係例如被捲繞成旋渦狀的電熱線，流通於該電熱線的電流，係以該發熱體12成為所定溫度之方式藉由控制器(未圖示)進行控制。在該發熱體12所發生的熱，係藉由設置於下部的斷熱材16抑制對下方的傳達，另一方面，藉由設置於上部的平板14促進對上方的傳達。再者，於平板14，例如使用熱傳導性高的鋁。藉由此種構造，加熱單元10可有效率地加熱吸盤台2上的晶圓1。 [0027] 在表面保護構件黏合步驟中，首先，於吸盤台2的保持部4上，在表面1a朝向上方之狀態下載置晶圓1。然後，使該吸引源6動作而負壓透過吸引路徑8及保持部4的多孔質構件作用於晶圓1，使吸盤台2吸引保持晶圓1。 [0028] 接著，於加熱單元10的發熱體12流通電流以使發熱體12發熱。發熱體12所發出的熱傳導至被吸盤台2吸引保持的晶圓1，進而加熱晶圓1。在晶圓1的溫度成為所定溫度之狀態下，將表面保護構件7黏合於晶圓1的表面1a。在本實施形態中，為了更確實進行該貼合，於被黏合於晶圓1的表面1a的表面保護構件7上載放滾筒18，以不產生皺摺之方式利用該滾筒18一邊拉伸表面保護構件7一邊進行黏合。 [0029] 表面保護構件7係具有具備可撓性之薄膜狀的高剛性基材7a，與形成於該高剛性基材7a的一方之面的糊層(接著劑層)7b。在此，該高剛性基材7a係指例如使用剛性比PO(聚烯)還高之材料的基板。使用高剛性基材7a的話，可強力地支持晶圓1及晶片，抑制晶片的移動，抑制損傷的發生。高剛性基材7a例如可使用PET(聚對苯二甲酸乙二酯)、聚氯乙烯、聚苯乙烯等。 [0030] 高剛性基材7a係層積不同材料所成之2以上之層來形成亦可。該高剛性基材7a作為使用更高剛性的玻璃等之材料的硬質板亦可，此時，高剛性基材7a不具有可撓性亦可。該高剛性基材7a使用硬質板的話，可更強力地支持晶圓1及晶片。又，糊層(接著劑層)7b例如使用矽氧橡膠、丙烯酸系材料、環氧系材料等。 [0031] 表面保護構件7係該糊層朝向晶圓1的表面1a來進行黏合。該表面保護構件7係黏合於被加熱的晶圓1的話，熱從該晶圓1傳導而被加熱。表面保護構件7的該糊層7b係伴隨溫度的上升而軟化，故接觸被加熱的晶圓1時，該糊層7b會軟化。 [0032] 該糊層7b軟化的話，對於晶圓1的表面1a的密接性為提升，故晶圓1被分割成各個晶片之後，也可強力地保持各個晶片。所以，在分割成各個晶片之後即使磨削所致之應力作用，晶片也難以移動。於是，也可減低晶片的角部彼此之接觸的頻度，故晶片變得難以發生裂痕及缺角等的損傷。 [0033] 再者，表面保護構件7係不藉由從該晶圓1傳導的熱來進行加熱亦可，例如，於該滾筒18設置發熱體，藉由從該滾筒18傳導的熱來進行加熱亦可。又，表面保護構件7係在黏合於晶圓1的表面1a之後藉由燈管或暖風加熱亦可。溫度越高則表面保護構件7的糊層7b越容易軟化，例如，加熱至40℃以上，理想為50℃以上的溫度。 [0034] 但是，表面保護構件7的溫度過高的話，表面保護構件7所具有之基材及糊層7b會熔融，表面保護構件7已經無法發揮其功能，故加熱溫度必須比高剛性基材7a及糊層7b熔融的溫度還低。再者，基材及糊層熔融的溫度係根據其材質而不同，但是，例如基材使用PET(聚對苯二甲酸乙二酯)時，到約90℃為止不會熔融。 [0035] 再者，在表面保護構件黏合步驟中，不加熱表面保護構件亦可。於本實施形態之晶圓的加工方法中，可藉由具有高剛性基材7a的表面保護構件來充分保持晶片。 [0036] 接著，針對本實施形態的改質層形成步驟，使用圖2(A)來進行說明。改質層形成步驟，係在實施表面保護構件黏合步驟之前或之後實施。尤其，在表面保護構件黏合步驟之後實施的話，即使於改質層形成步驟中也可保護到晶圓1的表面1a，所以相當理想。 [0037] 在改質層形成步驟中，從晶圓1的背面1b側照射雷射光束，聚光於晶圓1的內部的所定深度，以形成改質層9。在改質層形成步驟中所使用之雷射加工裝置20，係具備吸引保持晶圓1的吸盤台22，與振盪雷射光束的加工頭24。 [0038] 吸盤台22係於內部具有與吸引源(未圖示)連接的吸引路徑(未圖示)，該吸引路徑的另一端連接於吸盤台22上的保持面22a。該保持面22a係藉由多孔質構件所構成，利用使藉由該吸引源所產生之負壓透過保持部4內的孔，作用於被載置於該保持面22a上的晶圓1，讓晶圓1被吸盤台22吸引保持。 [0039] 加工頭24係具有振盪對於晶圓具有透射性的雷射光束，聚光於晶圓1之內部的所定深度的功能，於該所定深度形成改質層9。再者，該雷射光束例如使用以Nd：YAG作為媒體而振盪的雷射光束。 [0040] 雷射加工裝置20可藉由以脈衝馬達等作為動力的加工進送手段(加工進送機構，未圖示)，將吸盤台22移動至雷射加工裝置20的加工進送方向(例如，圖2(A)的箭頭的方向)。在晶圓1的加工時等，將吸盤台22送至加工進送方向，對晶圓1進行加工進送。又，吸盤台22係可繞大略垂直於保持面22a之軸旋轉，可變化吸盤台22之加工進送的方向。 [0041] 進而，雷射加工裝置20可藉由以脈衝馬達等作為動力的轉位手段(轉位(indexing)機構，未圖示)，將吸盤台22移動至雷射加工裝置20的轉位方向(未圖示)。 [0042] 在改質層形成步驟中，首先，使晶圓1的表面1a朝向下側，於雷射加工裝置20的吸盤台22上載置晶圓1。然後，從該吸盤台22使負壓作用，使晶圓1吸引保持於吸盤台22上。吸引保持晶圓1之後，以可沿著切割道3形成改質層9之方式，調整吸盤台22與加工頭24的相對位置。 [0043] 接著，從雷射加工裝置20的加工頭24對晶圓1的背面1b照射雷射光束。使雷射光束聚光於晶圓1的所定深度，形成改質層(分割的起點)9。以沿著切割道3形成改質層9之方式，一邊照射雷射光束一邊使吸盤台22移動以對晶圓1進行加工進送。 [0044] 沿著一個切割道3形成改質層9之後，對晶圓1進行轉位，沿著鄰接的切割道3接續形成改質層(分割的起點)9。進而，使吸盤台22旋轉而切換對晶圓1進行加工進送的方向，之後，同樣地利用照射雷射光束，沿著所有的切割道3形成改質層9。 [0045] 再者，依據雷射光束的照射條件，除了形成改質層9之外，也可形成從該改質層9至晶圓1的表面1a的裂痕。如此，在改質層形成步驟中可形成裂痕的話，不需要另外實施用以形成作為晶片間之邊界的裂痕的步驟，可簡略化工程。 [0046] 在此，例如，將不使用高剛性基材7a之柔軟的膠帶使用於表面保護構件7的話，在改質層形成步驟中形成改質層9時，因為藉由雷射光束的照射所發生之衝擊及熱而該膠帶會移動，導致形成改質層9之前發生裂痕。於是，所形成之裂痕會蛇行。形成蛇行的裂痕而該裂痕成為晶片的邊界的話，於磨削步驟中，成為晶片發生缺角等的損傷之一因。 [0047] 藉由具有高剛性基材7a的表面保護構件7來支持晶圓1的話，即使對晶圓1照射雷射光束，該表面保護構件7也難移動，裂痕不會在改質層9的形成前形成，故以不會因改質層9而蛇行之方式進行控制來形成裂痕。因此，於後述的磨削步驟中抑制各晶片的角部彼此的接觸，抑制缺角等之損傷的發生。 [0048] 接著，使用圖2(B)針對磨削步驟進行說明。該磨削步驟在改質層形成步驟之後實施。在該磨削步驟中，磨削晶圓1的背面1b側，晶圓1被薄化成所定厚度。在改質層形成步驟中未形成分割時的邊界的裂痕時，於該磨削步驟中形成該裂痕。此時，使因磨削所產生的外力作用於該改質層9以形成該裂痕。對形成了裂痕之晶圓1的背面1b進行磨削的話，可將晶圓1分割成各個晶片。 [0049] 圖2(B)係模式地說明磨削步驟的部分剖面圖。在本步驟中，使用磨削裝置26。磨削裝置26係具備構成垂直於磨削輪30之旋轉軸的主軸28，與安裝於該主軸28的一端側，於下側具備磨削砥石32之圓盤狀的磨削輪30。於該主軸28的另一端側，連結馬達等之旋轉驅動源(未圖示)，該馬達使該主軸28旋轉時，安裝於該主軸28的磨削輪30也會旋轉。 [0050] 又，磨削裝置26具有與磨削輪30對向，保持被加工物的吸盤台34。吸盤台34上的保持面34a係以連接於吸引源(未圖示)的多孔質構件所構成。再者，吸盤台34可繞大略垂直於保持面34a之軸旋轉。 [0051] 首先，使晶圓1的表面1a朝向下側，於吸盤台34的保持面34a上載置晶圓1。然後，透過該多孔質構件而使該吸引源所致之負壓作用，使晶圓1吸引保持於吸盤台34上。進而，磨削裝置26係具有升降機構(未圖示)，磨削輪30藉由該升降機構進行加工進送(下降)。 [0052] 磨削時，使吸盤台34旋轉，並且使主軸28旋轉以使磨削輪30旋轉。在吸盤台34及磨削輪30旋轉之狀態下，磨削輪30進行加工進送(下降)，磨削砥石32抵接於晶圓1的背面1b的話，則開始該背面1b的磨削。然後，以晶圓1成為所定厚度之方式進而對磨削輪30進行加工進送。 [0053] 於上述的改質層形成步驟中，未形成裂痕時，或該裂痕的形成並不充分時，則在該磨削步驟中形成該裂痕。亦即，使藉由該磨削所產生的應力作用於晶圓1的內部，使裂痕從改質層9向晶圓1的厚度方向伸長。對形成了裂痕之晶圓1的背面1b進行磨削的話，沿著切割道3形成間隙，晶圓1可分割成各個晶片。 [0054] 在本實施形態的加工方法中，於該磨削步驟中薄化晶圓1時，晶圓1會被分割成各個裝置晶片。因此，不需要僅為了分割裝置晶片而實施其他步驟，可簡略化裝置晶片的製作工程。 [0055] 另一方面，因為形成各個晶片之後也持續磨削，於各個晶片，應力施加於與保持面34a平行之面內的方向。但是，於本實施形態的加工方法中，晶片的表面側係黏合具有高剛性基材7a的表面保護構件7，該高剛性基材7a抵抗該應力而強力地支持晶片。因此，各個晶片難移動，也可抑制各晶片的角部彼此的接觸。所以，可抑制缺角及不需要的裂痕等之損傷的發生。 [0056] 藉由以上的各步驟，在本實施形態的加工方法中形成晶片。 [0057] 接著，針對驗證本實施形態之加工方法的作用效果的試驗進行說明。在本試驗中，以分別使用不同的表面保護構件7之複數加工條件來作成晶片，在各條件中計算晶片所發生的損傷的數量。再者，在各條件中，使用相同晶圓，實施同樣的步驟。藉由本試驗，獲得表面保護構件7與損傷的數量的關係相關之發現。 [0058] 在該試驗中，作為樣本，使用3張直徑12英吋的矽晶圓，分別於該表面保護構件，使用於厚度50μm的基材上，形成厚度20μm的糊層之以下所示的表面保護構件。 [0059] 亦即，在樣本A中，使用具有使用PET之基材的表面保護構件。在樣本B中，使用具有層積PET材料與PO材料之基材的表面保護構件。在樣本C中，使用將使用玻璃之硬質板設為基材的表面保護構件。在樣本D中，使用具有僅使用剛性比PET低之PO的基材的表面保護構件。在該試驗中，使用各條件分別不同的表面保護構件，實施表面保護構件黏合步驟。 [0060] 接著，對於各樣本實施同樣的改質層形成步驟，沿著各樣本的切割道形成分割起點的改質層，並且形成從該改質層至晶圓的表面的裂痕。接著，對於各樣本實施同樣的磨削步驟，從背面磨削薄化各樣本，分割成各個晶片。 [0061] 然後，實施磨削步驟之後，計算晶片所發生之裂痕及缺角等的損傷。在該計算中，使用安裝倍率200倍的物透鏡的紅外線相機來觀察樣本，計算5μm以上的大小之損傷的數量。被計算之損傷的數量，在樣本A(PET基材)中為32個，在樣本B(PET與PO的層積基材)中為53個，在樣本C(硬質板基材)中為15個，在樣本D(PO基材)中為118個。 [0062] 比較各樣本的結果的話，可知依據表面保護構件之基材的材質所發生之損傷的數量有差別。PET材料的剛性比PO材料高，比較樣本A(PET基材)的結果與樣本D(PO基材)的結果的話，可知基材的剛性越高則損傷的數量越少。 [0063] 又，在樣本B(PET與PO的層積基材)中所觀測到之損傷的數量，係為在樣本A(PET基材)中所觀測到之損傷的數量，與在樣本D(PO基材)中所觀測到之損傷的數量之間的數量。此係可推測為因為層積PET與PO所形成之基材的剛性，比PET基材低，比PO基材高所致。亦即，暗示使用具有比PO基材高之剛性的基材的話，可減低晶片所發生之損傷。在使用更性高的硬質板的樣本C中，可更減低損傷。 [0064] 使用PET材料的高剛性基材係可抵抗因磨削所產生的應力而抑制晶片的移動，且抑制晶片的角部彼此的接觸。又，於改質層形成步驟中，成為晶圓的分割時之邊界的裂痕可不由改質層蛇行而形成。結果，可抑制晶片的缺角及不需要之裂痕的發生。根據以上的結果，可確認到藉由本實施形態的加工方法，抑制晶片之損傷的發生。 [0065] 再者，本發明並不限定於前述實施形態的記載，可進行各種變更來實施。例如在前述實施形態中，沿著各切割道3於晶圓1一直線狀地形成改質層9，但是，本發明並不限定於其。例如，也可於各切割道3形成自裝置5起的距離不同之複數改質層9。 [0066] 針對此種形態的改質層9，使用圖3來進行說明。如圖3所示，晶圓1的複數切割道3係包含延伸於第1方向1c的第1切割道3a，與延伸於和該第1方向1c交叉之第2方向1d的第2切割道3b。 [0067] 在改質層形成步驟中，例如形成沿著該第1切割道3a的第1改質層9a，與沿著該第2切割道3b的第2改質層9b。該第1改質層9a係以任意該第2切割道3b為邊界，具有一方側的第1部分11a，與另一方側的第2部分11b。該第1改質層9a的第1部分11a，與該第1改質層9a的第2部分11b並不是一直線狀，相互錯開於第2方向1d。 [0068] 在第1改質層9a形成為一直線狀時，藉由磨削所形成之晶片移動的話，晶片的角部會與鄰接於其角部側之晶片的角部接觸。因為晶片的角部不耐衝擊，所以，因角部與角部接觸而施加衝擊的話，該晶片容易產生缺角及不需要之裂痕等的損傷。 [0069] 因此，如圖3所示，將該第1改質層9a的第1部分11a，與該第1改質層9a的第2部分11b，相互錯開於第2方向1d來形成的話，晶片的角部彼此會隔開所錯開的距離。因此，除了表面保護構件使用高剛性基材之外，晶片的角部變得難以與鄰接於其角部側之晶片的角部接觸，可抑制晶片之角部的損傷的發生。 [0070] 又，第1改質層9a的第1部分11a與第2部分11b，係以離開鄰接之第2改質層9b之方式形成亦可。亦即，在第1改質層9a的第1部分11a的端部和第2部分11b的端部，與鄰接於該端部之第2改質層9b之間設置所定距離。 [0071] 在形成第1改質層9a時，發生加工進送的誤差的話，也會有第1部分11a的端部及第2部分11b的端部，不會再所定位置終止，在比所定位置更往第1方向1c前進的位置終止之狀況。因此，在第1改質層9a的第1部分11a的端部或第2部分11b的端部，與鄰接於該端部之第2改質層9b未隔開時，有第1改質層9a橫跨第2改質層9b形成之狀況。 [0072] 橫跨第2改質層9b形成之第1改質層9a的從第2改質層9b超出的部分，會殘留於所形成的晶片，可能變成發生缺角及不需要之裂痕的起點。因此，為了即使發生加工進送的誤差等，在所形成之晶片也不會殘留該起點，第1改質層9a的第1部分11a與第2部分11b，係以離開鄰接之第2改質層9b之方式形成為佳。 [0073] 如圖3所示，針對將該第1改質層9a的第1部分11a，與該第1改質層9a的第2部分11b相互錯開於第2方向1d來形成的方法進行說明。在改質層形成步驟中，首先，於第1切割道3a的全長中，形成該第1改質層9a的第1部分11a。 [0074] 亦即，每於沿著第1切割道3a對晶圓1進行晶片之一邊的長度之程度的加工進送，重複雷射的振盪與停止，涵蓋第1切割道3a的全長，形成第1改質層9a的第1部分11a。 [0075] 接著，對晶圓1往第2方向1d以第1切割道3a的寬度以內之所定距離進行轉位，沿著第1切割道3a，形成第1改質層9a的第2部分11b。 [0076] 亦即，每於沿著第1切割道3a對晶圓1進行晶片之一邊的長度之程度的加工進送，重複雷射的振盪與停止，以配設於兩個第1部分11a之間之方式，形成第1改質層9a的第2部分11b。於是，第1部分11a的端部與鄰接於該端部之第2部分11b的端部，會相隔開該所定距離以上。 [0077] 於一個第1切割道3a中，形成包含第1部分11a與第2部分11b的第1改質層9a之後，以晶片之一邊的長度之程度的距離，逐次對晶圓1進行轉位，接連形成改質層9。對於平行於第1方向1c的切割道3形成改質層9之後，以可往第2方向1d進行加工進送之方式使晶圓1旋轉，沿著平行於第2方向1d的切割道3，接連形成改質層9。藉由以上內容，可涵蓋晶圓1整面，形成圖3所示之改質層9。 [0078] 再者，已針對將第1改質層9a分成第1部分11a與第2部分11b來形成之狀況進行說明，但是，進而沿著第2切割道3b形成的第2改質層9b也同樣地，分成錯開於第1方向1c的兩個部分來形成亦可。 [0079] 此外，前述實施形態的構造、方法等只要不脫離本發明的目的的範圍，可適當變更來實施。[0018] An embodiment of the present invention will be described. A wafer to be processed in the processing method of the present embodiment will be described. FIG. 1 is a perspective view showing an example of the wafer. The wafer 1 that is the object to be processed in the processing method of this embodiment is a substrate made of, for example, silicon, SiC (silicon carbide), other semiconductor materials, or materials such as sapphire, glass, and quartz. [0019] The surface 1a of the wafer 1 is divided into a plurality of regions by dicing lines 3 arranged in a grid pattern. The cutting line 3 includes a first cutting line 3a extending in the first direction 1c and a cutting line 3b extending in the second direction 1d that intersects the first direction 1c. Then, a device 5 such as an IC is formed in each area divided by the dicing path 3. The wafer 1 is finally divided along the scribe line 3 to form individual wafers. [0020] Next, a processing method of the wafer 1 according to this embodiment will be described. In this processing method, a surface protection member bonding step of bonding a surface protection member having a highly rigid base material to the surface 1 a of the wafer 1 is performed. After the surface protective member bonding step, a modified layer forming step of forming a modified layer along the dicing path 3 of the wafer 1 to be a starting point for division is performed. After the modified layer forming step is performed, a grinding step of grinding the back surface 1b of the wafer 1 and dividing the wafer 1 into individual device wafers is performed. [0021] Furthermore, in the modified layer forming step or the grinding step, cracks are extended from the modified layer to the surface 1a of the wafer 1. Then, if the crack penetrates the wafer in the thickness direction, or if the back surface 1b side of the wafer 1 is ground and the crack is exposed on the back surface 1b side, the wafer 1 is divided into individual device wafers. [0022] Hereinafter, each step of the wafer processing method according to this embodiment will be described in detail. [0023] Using FIG. 1 (B), the surface protection member bonding step will be described. In the surface protection member bonding step, the surface protection member 7 is bonded to the surface 1 a of the wafer 1. The surface protection member 7 has a function of protecting the surface 1a side of the wafer 1 from the impact applied during each step and the transportation during the wafer processing method of this embodiment, and preventing the device 5 from being damaged. [0024] First, the chuck table 2 used in the surface protection member bonding step will be described. The chuck table 2 includes a frame 2a having a recessed portion, and a holding portion 4 formed of a porous member embedded in the recessed portion of the frame 2a. The chuck table 2 has a suction path 8 connected to the suction source 6 at one end, and the other end of the suction path 8 is connected to the holding portion 4. The negative pressure generated by the suction source 6 is transmitted through the hole in the holding portion 4 to act on the wafer 1 placed on the holding portion 4, so that the wafer 1 is sucked and held by the chuck table 2. [0025] The chuck table 2 has a heating unit 10 below the holding section 4. The heating unit 10 has a function of heating the wafer 1 sucked and held by the chuck table 2. This heating unit 10 includes a frame body 10a having a recessed portion. In the recessed portion, a heating element (heating means) 12, a flat plate 14 on the heating element 12, and a heat-insulating material 16 under the heating element 12 are arranged. [0026] The heating element 12 is, for example, a vortex-shaped electric heating wire, and a current flowing through the heating wire is controlled by a controller (not shown) so that the heating element 12 becomes a predetermined temperature. The heat generated in the heating element 12 is suppressed from being transmitted to the lower side by the heat-insulating material 16 provided on the lower side, and the upper side is promoted by the flat plate 14 provided on the upper side. The flat plate 14 is made of, for example, aluminum having high thermal conductivity. With this configuration, the heating unit 10 can efficiently heat the wafer 1 on the chuck table 2. [0027] In the surface protection member bonding step, first, the wafer 1 is loaded on the holding portion 4 of the chuck table 2 with the surface 1a facing upward. Then, the suction source 6 is operated, and a porous member having a negative pressure penetrating through the suction path 8 and the holding portion 4 is applied to the wafer 1, and the chuck table 2 sucks and holds the wafer 1. [0028] Next, a current is passed through the heating element 12 of the heating unit 10 to cause the heating element 12 to generate heat. The heat emitted from the heating element 12 is conducted to the wafer 1 which is sucked and held by the chuck table 2, and further heats the wafer 1. In a state where the temperature of the wafer 1 is a predetermined temperature, the surface protection member 7 is adhered to the surface 1 a of the wafer 1. In this embodiment, in order to perform this bonding more reliably, a roller 18 is placed on the surface protection member 7 adhered to the surface 1a of the wafer 1, and the roller 18 is used to stretch the surface protection while not causing wrinkles. The members 7 are adhered on one side. [0029] The surface protection member 7 includes a flexible film-like highly rigid base material 7a and a paste layer (adhesive layer) 7b formed on one surface of the highly rigid base material 7a. Here, the high-rigidity substrate 7a refers to, for example, a substrate using a material having higher rigidity than PO (polyene). When the highly rigid base material 7a is used, the wafer 1 and the wafer can be strongly supported, the movement of the wafer can be suppressed, and the occurrence of damage can be suppressed. As the high-rigidity substrate 7a, for example, PET (polyethylene terephthalate), polyvinyl chloride, polystyrene, or the like can be used. [0030] The high-rigidity substrate 7a may be formed by laminating two or more layers made of different materials. The high-rigidity base material 7a may be a rigid plate using a material such as glass with higher rigidity. In this case, the high-rigidity base material 7a may not have flexibility. When a rigid board is used for the high-rigidity base material 7a, the wafer 1 and the wafer can be more strongly supported. As the paste layer (adhesive layer) 7b, for example, a silicone rubber, an acrylic material, an epoxy material, or the like is used. [0031] The surface protection member 7 adheres the paste layer toward the surface 1a of the wafer 1. When the surface protection member 7 is adhered to the heated wafer 1, heat is conducted from the wafer 1 and heated. The paste layer 7b of the surface protection member 7 is softened as the temperature rises. Therefore, the paste layer 7b is softened when it contacts the heated wafer 1. [0032] When the paste layer 7b is softened, the adhesion to the surface 1a of the wafer 1 is improved. Therefore, after the wafer 1 is divided into individual wafers, each wafer can be strongly held. Therefore, it is difficult for the wafer to move even after the stress caused by grinding after the division into individual wafers. As a result, the frequency of contact between the corners of the wafer can also be reduced, so that the wafer becomes less likely to be damaged by cracks, chippings, or the like. [0033] In addition, the surface protection member 7 may be heated without using heat transmitted from the wafer 1. For example, a heating element is provided in the drum 18, and heating is performed by the heat transmitted from the drum 18. Yes. The surface protection member 7 may be heated by a lamp or warm air after being adhered to the surface 1 a of the wafer 1. The higher the temperature, the more easily the paste layer 7b of the surface protective member 7 is softened. For example, it is heated to a temperature of 40 ° C or higher, and preferably 50 ° C or higher. [0034] However, if the temperature of the surface protection member 7 is too high, the base material and the paste layer 7b of the surface protection member 7 will be melted, and the surface protection member 7 can no longer perform its function. Therefore, the heating temperature must be higher than that of the highly rigid substrate The melting temperatures of 7a and 7b are still low. The melting temperature of the base material and the paste layer differs depending on the material. However, for example, when PET (polyethylene terephthalate) is used as the base material, it does not melt until about 90 ° C. [0035] Further, in the surface protection member bonding step, the surface protection member may not be heated. In the wafer processing method of this embodiment, the wafer can be sufficiently held by a surface protection member having a highly rigid base material 7a. [0036] Next, the modified layer forming step of this embodiment will be described using FIG. 2 (A). The modified layer forming step is performed before or after the surface protective member bonding step is performed. In particular, if implemented after the surface protective member bonding step, the surface 1a of the wafer 1 can be protected even in the modified layer forming step, which is quite desirable. [0037] In the modified layer forming step, a laser beam is irradiated from the back surface 1b side of the wafer 1 and condensed at a predetermined depth inside the wafer 1 to form the modified layer 9. The laser processing apparatus 20 used in the reforming layer forming step includes a chuck table 22 that sucks and holds the wafer 1 and a processing head 24 that oscillates a laser beam. [0038] The suction cup table 22 has a suction path (not shown) connected to a suction source (not shown) inside, and the other end of the suction path is connected to the holding surface 22a on the suction cup table 22. The holding surface 22a is constituted by a porous member, and the negative pressure generated by the suction source is transmitted through the hole in the holding portion 4 to act on the wafer 1 placed on the holding surface 22a, so that The wafer 1 is sucked and held by the chuck table 22. [0039] The processing head 24 has a function of oscillating a laser beam that is transmissive to the wafer and condenses it at a predetermined depth inside the wafer 1, and forms a modified layer 9 at the predetermined depth. As the laser beam, for example, a laser beam oscillating using Nd: YAG as a medium is used. [0040] The laser processing apparatus 20 can move the chuck table 22 to the processing feed direction of the laser processing apparatus 20 by using a processing feed means (processing feed mechanism, not shown) powered by a pulse motor or the like ( For example, the direction of the arrow in FIG. 2 (A)). During processing of the wafer 1 or the like, the chuck table 22 is sent to the processing feed direction, and the wafer 1 is processed and fed. In addition, the chuck table 22 is rotatable about an axis substantially perpendicular to the holding surface 22a, and the processing feed direction of the chuck table 22 can be changed. [0041] Furthermore, the laser processing apparatus 20 can move the chuck table 22 to the indexing of the laser processing apparatus 20 by an indexing means (indexing mechanism (not shown)) using a pulse motor or the like as power. Direction (not shown). [0042] In the modified layer forming step, first, the surface 1a of the wafer 1 faces downward, and the wafer 1 is placed on the chuck table 22 of the laser processing apparatus 20. Then, a negative pressure is applied from the chuck table 22 to suck and hold the wafer 1 on the chuck table 22. After the wafer 1 is sucked and held, the relative position of the chuck table 22 and the processing head 24 is adjusted so that the modified layer 9 can be formed along the dicing path 3. [0043] Next, a laser beam is irradiated onto the back surface 1b of the wafer 1 from the processing head 24 of the laser processing apparatus 20. The laser beam is condensed at a predetermined depth of the wafer 1 to form a modified layer (start of division) 9. In a manner that the modified layer 9 is formed along the dicing path 3, the chuck table 22 is moved while the laser beam is irradiated to process and feed the wafer 1. [0044] After the modified layer 9 is formed along one dicing path 3, the wafer 1 is indexed, and the modified layer (start of division) 9 is successively formed along the adjacent diced path 3. Further, the chuck table 22 is rotated to switch the processing feed direction of the wafer 1, and thereafter, the modified layer 9 is formed along all the dicing lanes 3 by irradiating the laser beam in the same manner. [0045] Furthermore, depending on the irradiation conditions of the laser beam, in addition to forming the modified layer 9, a crack may be formed from the modified layer 9 to the surface 1a of the wafer 1. In this way, if a crack can be formed in the modified layer forming step, it is not necessary to separately implement a step for forming a crack as a boundary between the wafers, and the process can be simplified. [0046] Here, for example, if a soft tape that does not use the high-rigidity base material 7a is used for the surface protective member 7, when the modified layer 9 is formed in the modified layer forming step, the laser beam is irradiated. The impact and heat caused the tape to move, leading to cracks before the modified layer 9 is formed. As a result, the cracks formed will snake. If a serpentine crack is formed and the crack becomes a boundary of the wafer, it may be a cause of damage such as chipping of the wafer during the grinding step. [0047] When the wafer 1 is supported by a surface protection member 7 having a highly rigid base material 7a, even if the wafer 1 is irradiated with a laser beam, the surface protection member 7 is difficult to move, and cracks are not formed in the modified layer 9. It is formed before the formation of the silicon oxide, so that cracks are formed in a manner that it does not meander because of the modified layer 9. Therefore, in the grinding step described later, the contact of the corners of the wafers with each other is suppressed, and the occurrence of damage such as chipping is suppressed. [0048] Next, the grinding step will be described using FIG. 2 (B). This grinding step is performed after the modification layer forming step. In this grinding step, the back surface 1b side of the wafer 1 is ground, and the wafer 1 is thinned to a predetermined thickness. When a crack at the boundary at the time of division is not formed in the modified layer forming step, the crack is formed in the grinding step. At this time, an external force generated by grinding is caused to act on the modified layer 9 to form the crack. When the back surface 1b of the cracked wafer 1 is ground, the wafer 1 can be divided into individual wafers. [0049] FIG. 2 (B) is a partial cross-sectional view schematically illustrating a grinding step. In this step, a grinding device 26 is used. The grinding device 26 includes a main shaft 28 constituting a rotation axis perpendicular to the grinding wheel 30, and a disc-shaped grinding wheel 30 attached to one end side of the main shaft 28 and a grinding vermiculite 32 at a lower side. A rotation drive source (not shown) such as a motor is connected to the other end side of the main shaft 28. When the motor rotates the main shaft 28, the grinding wheel 30 mounted on the main shaft 28 also rotates. [0050] The grinding device 26 includes a chuck table 34 that faces the grinding wheel 30 and holds a workpiece. The holding surface 34a on the chuck table 34 is constituted by a porous member connected to a suction source (not shown). Furthermore, the chuck table 34 can rotate about an axis substantially perpendicular to the holding surface 34a. [0051] First, the surface 1a of the wafer 1 faces downward, and the wafer 1 is placed on the holding surface 34a of the chuck table 34. Then, the negative pressure caused by the suction source acts through the porous member, and the wafer 1 is sucked and held on the chuck table 34. The grinding device 26 further includes a lifting mechanism (not shown), and the grinding wheel 30 performs processing feed (downward) by the lifting mechanism. [0052] During grinding, the chuck table 34 is rotated, and the main shaft 28 is rotated to rotate the grinding wheel 30. When the chuck table 34 and the grinding wheel 30 are rotating, the grinding wheel 30 performs processing feed (downward), and when the grinding vermiculite 32 abuts against the back surface 1b of the wafer 1, grinding of the back surface 1b is started. Then, the grinding wheel 30 is further processed so that the wafer 1 has a predetermined thickness. [0053] In the above-mentioned modified layer forming step, when a crack is not formed, or when the formation of the crack is insufficient, the crack is formed in the grinding step. That is, the stress generated by the grinding is applied to the inside of the wafer 1, and the crack is extended from the modified layer 9 in the thickness direction of the wafer 1. When the back surface 1b of the cracked wafer 1 is ground, a gap is formed along the scribe line 3, and the wafer 1 can be divided into individual wafers. [0054] In the processing method of this embodiment, when the wafer 1 is thinned in this grinding step, the wafer 1 is divided into individual device wafers. Therefore, it is not necessary to perform other steps just to divide the device wafer, and the manufacturing process of the device wafer can be simplified. [0055] On the other hand, since the grinding is continued after forming each wafer, the stress is applied to each wafer in a direction parallel to the holding surface 34a. However, in the processing method of this embodiment, the surface side of the wafer is adhered to the surface protection member 7 having a highly rigid substrate 7a, and the highly rigid substrate 7a strongly supports the wafer against the stress. Therefore, it is difficult to move the respective wafers, and contact between the corners of the wafers can be suppressed. Therefore, it is possible to suppress the occurrence of damage such as chipping and unnecessary cracks. [0056] Through the above steps, a wafer is formed in the processing method of this embodiment. [0057] Next, a test for verifying the effect of the processing method of this embodiment will be described. In this test, wafers were prepared using a plurality of processing conditions for different surface protection members 7, and the number of damages to the wafer was calculated under each condition. In addition, the same steps were performed under the same conditions using the same wafer. Based on this test, it was found that the relationship between the surface protection member 7 and the number of damages was found. [0058] In this test, three silicon wafers with a diameter of 12 inches were used as samples, and the surface protection member was used on a substrate having a thickness of 50 μm to form a paste layer having a thickness of 20 μm as shown below. Surface protection member. [0059] That is, in Sample A, a surface protection member having a substrate using PET was used. In sample B, a surface protection member having a substrate having a laminated PET material and a PO material was used. In the sample C, a surface protection member using a glass-based hard plate as a base material was used. In the sample D, a surface protection member having a substrate using only PO having lower rigidity than PET was used. In this test, a surface protection member bonding step was performed using surface protection members having different conditions. [0060] Next, the same modified layer forming step is performed for each sample, a modified layer at the starting point of division is formed along the cutting path of each sample, and a crack is formed from the modified layer to the surface of the wafer. Next, the same grinding process was performed on each sample, and each sample was ground-thinned from the back surface and divided into individual wafers. [0061] Then, after the grinding step is performed, damage such as cracks, chippings, etc. occurring on the wafer is calculated. In this calculation, the sample was observed using an infrared camera equipped with an objective lens with a magnification of 200 times, and the number of damages having a size of 5 μm or more was calculated. The number of calculated damages was 32 in sample A (PET substrate), 53 in sample B (layered substrate of PET and PO), and 15 in sample C (rigid board substrate). There are 118 samples in the sample D (PO substrate). [0062] When the results of each sample are compared, it can be seen that the number of damages that occur depending on the material of the base material of the surface protection member is different. The rigidity of the PET material is higher than that of the PO material. Comparing the results of Sample A (PET substrate) with the results of Sample D (PO substrate), it can be seen that the higher the rigidity of the substrate, the smaller the number of damages. [0063] In addition, the number of damages observed in sample B (a laminated substrate of PET and PO) is the number of damages observed in sample A (a PET substrate), and that in sample D (Po substrate) The amount between the number of damages observed in the (PO substrate). This is presumably because the rigidity of the substrate formed by laminating PET and PO is lower than that of PET and higher than that of PO. That is, it is suggested that the use of a substrate having a higher rigidity than the PO substrate can reduce damage to the wafer. In the sample C using a more rigid hard plate, damage can be further reduced. [0064] A highly rigid base material using a PET material can suppress the movement of the wafer due to the stress caused by grinding, and can prevent the corners of the wafer from contacting each other. Further, in the reforming layer forming step, a crack that becomes a boundary during the division of the wafer may not be formed by meandering the reforming layer. As a result, chipping of the wafer and occurrence of unnecessary cracks can be suppressed. From the above results, it was confirmed that the damage of the wafer was suppressed by the processing method of this embodiment. [0065] In addition, the present invention is not limited to the description of the embodiment described above, and can be implemented with various changes. For example, in the aforementioned embodiment, the modified layer 9 is formed linearly on the wafer 1 along each scribe line 3, but the present invention is not limited to this. For example, a plurality of modified layers 9 having different distances from the device 5 may be formed on each cutting line 3. [0066] The modified layer 9 in this form will be described with reference to FIG. 3. As shown in FIG. 3, the plurality of scribe lines 3 of wafer 1 include a first scribe line 3a extending in a first direction 1c, and a second scribe line 3b extending in a second direction 1d crossing the first direction 1c. . [0067] In the modified layer forming step, for example, a first modified layer 9a along the first dicing path 3a and a second modified layer 9b along the second diced path 3b are formed. The first modified layer 9a has a boundary between any of the second cutting lines 3b, and has a first portion 11a on one side and a second portion 11b on the other side. The first portion 11a of the first modified layer 9a and the second portion 11b of the first modified layer 9a are not linear, and are offset from each other in the second direction 1d. [0068] When the first modified layer 9a is formed in a straight line shape, if the wafer formed by grinding moves, the corner portion of the wafer contacts the corner portion of the wafer adjacent to the corner side. Because the corners of the wafer are not resistant to impact, if the corners are in contact with the corners and an impact is applied, the wafer is prone to damage such as chipping and unnecessary cracks. [0069] Therefore, as shown in FIG. 3, if the first portion 11a of the first modified layer 9a and the second portion 11b of the first modified layer 9a are staggered from each other in the second direction 1d, The corners of the wafer are separated from each other by a staggered distance. Therefore, in addition to using a highly rigid base material for the surface protection member, it is difficult for the corners of the wafer to come into contact with the corners of the wafer adjacent to the corner side, and the occurrence of damage to the corners of the wafer can be suppressed. [0070] The first portion 11a and the second portion 11b of the first modified layer 9a may be formed so as to be separated from the adjacent second modified layer 9b. That is, a predetermined distance is provided between the end portion of the first portion 11a and the end portion of the second portion 11b of the first modified layer 9a and the second modified layer 9b adjacent to the end portion. [0071] When forming the first modified layer 9a, if there is an error in the processing feed, there will also be the end of the first portion 11a and the end of the second portion 11b, and it will not terminate at a predetermined position. The situation where the position is further advanced toward the first direction 1c. Therefore, when the end portion of the first portion 11a or the end portion of the second portion 11b of the first reformed layer 9a is not separated from the second reformed layer 9b adjacent to the end, there is a first reformed layer. 9a is formed across the second modified layer 9b. [0072] The portion of the first modified layer 9a formed across the second modified layer 9b beyond the second modified layer 9b will remain on the formed wafer, and may cause chipping and unnecessary cracks. starting point. Therefore, in order to prevent the starting point from remaining on the formed wafer even if an error in processing advance occurs, the first portion 11a and the second portion 11b of the first modified layer 9a are separated from the adjacent second modified layer. The form of the layer 9b is preferably formed. [0073] As shown in FIG. 3, a method of forming the first portion 11a of the first modified layer 9a and the second portion 11b of the first modified layer 9a staggered from each other in the second direction 1d will be described. . In the modified layer forming step, first, a first portion 11a of the first modified layer 9a is formed over the entire length of the first scribe line 3a. [0074] That is, each time the processing advance of the wafer 1 along the first scribe line 3a is performed, the laser oscillation is repeated and stopped to cover the entire length of the first scribe line 3a to form The first part 11a of the first modified layer 9a. [0075] Next, the wafer 1 is indexed in the second direction 1d by a predetermined distance within the width of the first scribe line 3a, and the second portion 11b of the first modified layer 9a is formed along the first scribe line 3a. . [0076] That is, each time the processing advance of the wafer 1 along the first dicing path 3a is performed to the length of one side of the wafer, the oscillation and stop of the laser are repeated to be disposed on the two first portions 11a. In this manner, the second portion 11b of the first modified layer 9a is formed. Then, the end portion of the first portion 11a and the end portion of the second portion 11b adjacent to the end portion are separated from each other by the predetermined distance or more. [0077] After forming the first modified layer 9a including the first portion 11a and the second portion 11b in a first dicing path 3a, the wafer 1 is successively rotated by a distance of the length of one side of the wafer. Bit, successively forming a modified layer 9. After the modified layer 9 is formed on the dicing path 3 parallel to the first direction 1c, the wafer 1 is rotated so as to be processed and fed to the second direction 1d, and the dicing path 3 parallel to the second direction 1d is A modified layer 9 is formed successively. With the above content, the entire surface of the wafer 1 can be covered to form the modified layer 9 shown in FIG. 3. [0078] Furthermore, a description has been given of a state in which the first modified layer 9a is formed by being divided into a first portion 11a and a second portion 11b. However, a second modified layer 9b formed along the second cutting line 3b is further described. Similarly, it may be formed by being divided into two parts shifted from the first direction 1c. [0079] In addition, the structures, methods, and the like of the foregoing embodiments can be appropriately modified and implemented as long as they do not depart from the scope of the object of the present invention.
[0080][0080]
1‧‧‧晶圓1‧‧‧ wafer
1a‧‧‧表面1a‧‧‧ surface
1b‧‧‧背面1b‧‧‧ back
1c‧‧‧第1方向1c‧‧‧1st direction
1d‧‧‧第2方向1d‧‧‧ 2nd direction
3‧‧‧切割道3‧‧‧ Cutting Road
3a‧‧‧第1切割道3a‧‧‧Section 1
3b‧‧‧第2切割道3b‧‧‧Second Cutting Road
5‧‧‧裝置5‧‧‧ device
7‧‧‧表面保護構件7‧‧‧Surface protection member
7a‧‧‧高剛性基材7a‧‧‧High rigidity substrate
7b‧‧‧糊層7b‧‧‧paste
9‧‧‧改質層9‧‧‧ reformed layer
9a‧‧‧第1改質層9a‧‧‧The first reforming layer
9b‧‧‧第2改質層9b‧‧‧The second reforming layer
2‧‧‧吸盤台2‧‧‧ Suction table
2a‧‧‧框體2a‧‧‧Frame
4‧‧‧保持部4‧‧‧ holding department
6‧‧‧吸引源6‧‧‧ Attraction source
8‧‧‧吸引路徑8‧‧‧ Attraction Path
10‧‧‧加熱單元10‧‧‧ heating unit
10a‧‧‧框體10a‧‧‧Frame
12‧‧‧發熱體12‧‧‧heating body
14‧‧‧平板14‧‧‧ Tablet
16‧‧‧斷熱材16‧‧‧Insulation material
18‧‧‧滾筒18‧‧‧ roller
20‧‧‧雷射加工裝置20‧‧‧laser processing equipment
22‧‧‧吸盤台22‧‧‧ Suction Table
22a‧‧‧保持面22a‧‧‧ holding surface
24‧‧‧加工頭24‧‧‧Processing head
26‧‧‧磨削裝置26‧‧‧Grinding device
28‧‧‧主軸28‧‧‧ Spindle
30‧‧‧磨削輪30‧‧‧Grinding wheel
32‧‧‧磨削砥石32‧‧‧ ground vermiculite
34‧‧‧吸盤台34‧‧‧ Suction table
34a‧‧‧保持面34a‧‧‧ holding surface
[0017] [圖1]圖1(A)係揭示晶圓之一例的立體圖，圖1(B)係模式地說明表面保護構件黏合步驟的剖面圖。 [圖2]圖2(A)係模式地說明改質層形成步驟的部分剖面圖，圖2(B)係模式地說明磨削步驟的部分剖面圖。 [圖3]說明切割道、裝置、改質層的位置關係的俯視圖。[0017] FIG. 1 (A) is a perspective view showing an example of a wafer, and FIG. 1 (B) is a cross-sectional view schematically illustrating a surface protection member bonding step. [FIG. 2] FIG. 2 (A) is a partial cross-sectional view schematically illustrating a modified layer forming step, and FIG. 2 (B) is a partial cross-sectional view schematically illustrating a grinding step. [Fig. 3] A plan view explaining the positional relationship of the cutting path, the device, and the reforming layer.
Claims (3)
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| JP2016183871A JP6746211B2 (en) | 2016-09-21 | 2016-09-21 | Wafer processing method |
| JP2016-183871 | 2016-09-21 |
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| JPH06275714A (en) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | Semiconductor laser element board and manufacture of semiconductor laser |
| JP2003001443A (en) * | 2000-09-13 | 2003-01-08 | Hamamatsu Photonics Kk | Laser beam machining device |
| JP4074758B2 (en) * | 2001-06-18 | 2008-04-09 | 株式会社ディスコ | Processing method of semiconductor wafer |
| EP3252806B1 (en) | 2002-03-12 | 2019-10-09 | Hamamatsu Photonics K.K. | Substrate dividing method |
| JP4240362B2 (en) | 2002-12-02 | 2009-03-18 | 住友電気工業株式会社 | Cleaving method of compound semiconductor wafer |
| JP4494728B2 (en) | 2003-05-26 | 2010-06-30 | 株式会社ディスコ | Non-metallic substrate division method |
| JP4634089B2 (en) | 2004-07-30 | 2011-02-16 | 浜松ホトニクス株式会社 | Laser processing method |
| JP5090897B2 (en) | 2007-12-28 | 2012-12-05 | 株式会社ディスコ | Wafer dividing method |
| JP2010123723A (en) * | 2008-11-19 | 2010-06-03 | Disco Abrasive Syst Ltd | Laser processing method of wafer |
| JP5395411B2 (en) * | 2008-11-20 | 2014-01-22 | 株式会社ディスコ | Wafer laser processing method |
| JP5501060B2 (en) * | 2009-04-02 | 2014-05-21 | 日東電工株式会社 | Method for laminating adhesive sheet for protecting semiconductor wafer, and adhesive sheet for protecting semiconductor wafer used in this laminating method |
| JP2011108708A (en) | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | Method of processing wafer |
| JP5625521B2 (en) | 2010-06-16 | 2014-11-19 | 豊田合成株式会社 | Laser processing method |
| JP5733954B2 (en) * | 2010-11-15 | 2015-06-10 | 株式会社ディスコ | Method for dividing optical device wafer |
| JP2014017434A (en) * | 2012-07-11 | 2014-01-30 | Disco Abrasive Syst Ltd | Method for processing wafer |
| JP6053381B2 (en) | 2012-08-06 | 2016-12-27 | 株式会社ディスコ | Wafer dividing method |
| JP6059499B2 (en) * | 2012-10-05 | 2017-01-11 | リンテック株式会社 | Surface protection sheet |
| JP6101468B2 (en) | 2012-10-09 | 2017-03-22 | 株式会社ディスコ | Wafer processing method |
| JP5598801B2 (en) | 2012-12-18 | 2014-10-01 | 株式会社レーザーシステム | Laser dicing method, chip manufacturing method, and laser processing apparatus |
| JP6045361B2 (en) | 2013-01-17 | 2016-12-14 | 株式会社ディスコ | Wafer processing method |
| JP6033116B2 (en) * | 2013-02-22 | 2016-11-30 | 株式会社ディスコ | Laminated wafer processing method and adhesive sheet |
| JP2015138815A (en) * | 2014-01-21 | 2015-07-30 | 株式会社ディスコ | Optical device and method of processing optical device |
| JP6277017B2 (en) * | 2014-03-03 | 2018-02-07 | 株式会社ディスコ | Optical device |
| JP2015201585A (en) | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | Processing method of wafer |
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