TW201817835A - 用於化學機械平坦化組合物之複合研磨粒及其使用方法 - Google Patents
用於化學機械平坦化組合物之複合研磨粒及其使用方法 Download PDFInfo
- Publication number
- TW201817835A TW201817835A TW107102774A TW107102774A TW201817835A TW 201817835 A TW201817835 A TW 201817835A TW 107102774 A TW107102774 A TW 107102774A TW 107102774 A TW107102774 A TW 107102774A TW 201817835 A TW201817835 A TW 201817835A
- Authority
- TW
- Taiwan
- Prior art keywords
- particles
- group
- acids
- salts
- oxide
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 124
- 239000000126 substance Substances 0.000 title claims abstract description 35
- 239000002245 particle Substances 0.000 title claims description 118
- 238000000034 method Methods 0.000 title claims description 36
- 239000002131 composite material Substances 0.000 title claims description 4
- 238000005498 polishing Methods 0.000 claims abstract description 104
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000011246 composite particle Substances 0.000 claims abstract description 40
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 89
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 89
- 150000003839 salts Chemical class 0.000 claims description 58
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 45
- -1 N-fluorenyl amino Chemical class 0.000 claims description 39
- 239000002105 nanoparticle Substances 0.000 claims description 37
- 239000000080 wetting agent Substances 0.000 claims description 30
- 239000007771 core particle Substances 0.000 claims description 27
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 25
- 239000000908 ammonium hydroxide Substances 0.000 claims description 25
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 19
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 150000003460 sulfonic acids Chemical class 0.000 claims description 16
- 239000004094 surface-active agent Substances 0.000 claims description 16
- 150000001735 carboxylic acids Chemical class 0.000 claims description 15
- 230000009471 action Effects 0.000 claims description 14
- 150000003009 phosphonic acids Chemical class 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052684 Cerium Inorganic materials 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 10
- 150000007513 acids Chemical class 0.000 claims description 10
- 125000000129 anionic group Chemical group 0.000 claims description 10
- 229910052791 calcium Inorganic materials 0.000 claims description 10
- 239000011575 calcium Substances 0.000 claims description 10
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 10
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 10
- 239000003002 pH adjusting agent Substances 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 9
- 150000001413 amino acids Chemical class 0.000 claims description 8
- 150000004982 aromatic amines Chemical class 0.000 claims description 8
- 125000002091 cationic group Chemical group 0.000 claims description 8
- 125000000524 functional group Chemical group 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 150000002989 phenols Chemical class 0.000 claims description 8
- 229920005862 polyol Chemical class 0.000 claims description 8
- 150000003077 polyols Chemical class 0.000 claims description 8
- 229940124530 sulfonamide Drugs 0.000 claims description 8
- 150000003456 sulfonamides Chemical class 0.000 claims description 8
- 150000003573 thiols Chemical class 0.000 claims description 8
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical class C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 claims description 7
- 229920002125 Sokalan® Polymers 0.000 claims description 7
- 150000001414 amino alcohols Chemical class 0.000 claims description 7
- 239000003966 growth inhibitor Substances 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 5
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 claims description 5
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 claims description 5
- 229960002218 sodium chlorite Drugs 0.000 claims description 5
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- FBEVECUEMUUFKM-UHFFFAOYSA-M tetrapropylazanium;chloride Chemical compound [Cl-].CCC[N+](CCC)(CCC)CCC FBEVECUEMUUFKM-UHFFFAOYSA-M 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 150000003003 phosphines Chemical class 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims 6
- FLNKWZNWHZDGRT-UHFFFAOYSA-N azane;dihydrochloride Chemical compound [NH4+].[NH4+].[Cl-].[Cl-] FLNKWZNWHZDGRT-UHFFFAOYSA-N 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims 2
- PXMAVJDQIRFRCT-UHFFFAOYSA-L [Cl-].[Cl-].CC[N+](CC)(CC)CC.CCC[N+](CCC)(CCC)CCC Chemical compound [Cl-].[Cl-].CC[N+](CC)(CC)CC.CCC[N+](CCC)(CCC)CCC PXMAVJDQIRFRCT-UHFFFAOYSA-L 0.000 claims 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 26
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 36
- 238000009472 formulation Methods 0.000 description 35
- 239000002002 slurry Substances 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 229920000058 polyacrylate Polymers 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 11
- 238000005119 centrifugation Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 229910019142 PO4 Inorganic materials 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 235000021317 phosphate Nutrition 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000004584 polyacrylic acid Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 125000003107 substituted aryl group Chemical group 0.000 description 3
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 150000004996 alkyl benzenes Chemical class 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000007542 hardness measurement Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 2
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical group OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101000625245 Homo sapiens rRNA methyltransferase 3, mitochondrial Proteins 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- JZTPOMIFAFKKSK-UHFFFAOYSA-N O-phosphonohydroxylamine Chemical class NOP(O)(O)=O JZTPOMIFAFKKSK-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Chemical group OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 125000005599 alkyl carboxylate group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 125000005227 alkyl sulfonate group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-M bisulphate group Chemical group S([O-])(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- YWTYJOPNNQFBPC-UHFFFAOYSA-N imidacloprid Chemical group [O-][N+](=O)\N=C1/NCCN1CC1=CC=C(Cl)N=C1 YWTYJOPNNQFBPC-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000012538 light obscuration Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 150000002681 magnesium compounds Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical group OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Chemical group 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 102100024982 rRNA methyltransferase 3, mitochondrial Human genes 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical class NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Chemical group OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Chemical group 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562102319P | 2015-01-12 | 2015-01-12 | |
| US62/102,319 | 2015-01-12 | ||
| US201562221379P | 2015-09-21 | 2015-09-21 | |
| US62/221,379 | 2015-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201817835A true TW201817835A (zh) | 2018-05-16 |
Family
ID=56367079
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107102774A TW201817835A (zh) | 2015-01-12 | 2016-01-12 | 用於化學機械平坦化組合物之複合研磨粒及其使用方法 |
| TW105100853A TWI654288B (zh) | 2015-01-12 | 2016-01-12 | 用於化學機械平坦化組合物之複合硏磨粒及其使用方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105100853A TWI654288B (zh) | 2015-01-12 | 2016-01-12 | 用於化學機械平坦化組合物之複合硏磨粒及其使用方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US10109493B2 (ja) |
| EP (1) | EP3245262B1 (ja) |
| JP (2) | JP6581198B2 (ja) |
| KR (2) | KR20190091579A (ja) |
| CN (2) | CN107109136A (ja) |
| IL (1) | IL253158B (ja) |
| SG (1) | SG11201705419RA (ja) |
| TW (2) | TW201817835A (ja) |
| WO (1) | WO2016115096A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI823321B (zh) * | 2021-04-02 | 2023-11-21 | 南韓商Ｓｋｃ索密思有限公司 | 半導體製程用拋光組合物以及使用拋光組合物的半導體裝置的製造方法 |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190091579A (ko) * | 2015-01-12 | 2019-08-06 | 버슘머트리얼즈 유에스, 엘엘씨 | 화학적 기계적 평탄화 조성물용 복합 연마 입자 및 이를 사용하는 방법 |
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| JP6560155B2 (ja) * | 2016-04-20 | 2019-08-14 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法 |
| SG11201906571TA (en) * | 2017-01-16 | 2019-08-27 | Jgc Catalysts & Chemicals Ltd | Polishing composition |
| JP6694653B2 (ja) * | 2017-04-10 | 2020-05-20 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法並びに合成石英ガラス基板の研磨方法 |
| US20190127607A1 (en) * | 2017-10-27 | 2019-05-02 | Versum Materials Us, Llc | Composite Particles, Method of Refining and Use Thereof |
| CN111094502B (zh) | 2017-10-31 | 2021-11-16 | Hoya株式会社 | 研磨液、玻璃基板的制造方法以及磁盘的制造方法 |
| JP6936183B2 (ja) * | 2018-04-24 | 2021-09-15 | 信越化学工業株式会社 | 合成石英ガラス基板用の研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法 |
| US11078417B2 (en) | 2018-06-29 | 2021-08-03 | Versum Materials Us, Llc | Low oxide trench dishing chemical mechanical polishing |
| US11718767B2 (en) | 2018-08-09 | 2023-08-08 | Versum Materials Us, Llc | Chemical mechanical planarization composition for polishing oxide materials and method of use thereof |
| US11180678B2 (en) | 2018-10-31 | 2021-11-23 | Versum Materials Us, Llc | Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process |
| US11608451B2 (en) * | 2019-01-30 | 2023-03-21 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates |
| WO2020166677A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | オニウム塩を含む半導体ウェハの処理液 |
| IL292390A (en) | 2019-10-24 | 2022-06-01 | Versum Mat Us Llc | sti chemical mechanical planarization composites with high oxide removal rates |
| US20240070590A1 (en) | 2019-11-01 | 2024-02-29 | Nec Corporation | Analyzing apparatus, control method, and storage medium |
| WO2021113285A1 (en) | 2019-12-04 | 2021-06-10 | Versum Materials Us, Llc | High oxide film removal rate shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing |
| WO2021118694A1 (en) * | 2019-12-12 | 2021-06-17 | Versum Materials Us, Llc | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
| US11254839B2 (en) | 2019-12-12 | 2022-02-22 | Versum Materials Us, Llc | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
| JP2024536365A (ja) * | 2021-10-05 | 2024-10-04 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | シャロートレンチアイソレーションのための化学機械平坦化研磨 |
| WO2023240260A1 (en) * | 2022-06-10 | 2023-12-14 | Saint-Gobain Ceramics & Plastics, Inc. | Chemical mechanical planarization slurry and method of polishing a substrate |
| WO2024173029A1 (en) * | 2023-02-17 | 2024-08-22 | Versum Materials Us, Llc | Chemical mechanical planarization for shallow trench isolation |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| JPH03202269A (ja) * | 1989-10-12 | 1991-09-04 | Nalco Chem Co | 低ナトリウム低金属シリカ研磨スラリー |
| EP0520109B1 (en) * | 1991-05-28 | 1995-03-29 | Rodel, Inc. | Low sodium, low metals silica polishing slurries |
| JP2001007060A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Ｃｍｐ研磨剤及び基板の研磨方法 |
| EP1691401B1 (en) * | 1999-06-18 | 2012-06-13 | Hitachi Chemical Co., Ltd. | Method for polishing a substrate using CMP abrasive |
| US20020025762A1 (en) | 2000-02-16 | 2002-02-28 | Qiuliang Luo | Biocides for polishing slurries |
| CN1295291C (zh) * | 2001-08-20 | 2007-01-17 | 三星康宁株式会社 | 包括二氧化硅涂覆铈土的抛光淤浆 |
| DE10204471C1 (de) * | 2002-02-05 | 2003-07-03 | Degussa | Wässerige Dispersion enthaltend mit Ceroxid umhülltes Siliciumdioxidpulver, Verfahren zu deren Herstellung und Verwendung |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6918820B2 (en) * | 2003-04-11 | 2005-07-19 | Eastman Kodak Company | Polishing compositions comprising polymeric cores having inorganic surface particles and method of use |
| JP4311247B2 (ja) * | 2004-03-19 | 2009-08-12 | 日立電線株式会社 | 研磨用砥粒、研磨剤、研磨液の製造方法 |
| KR101760529B1 (ko) * | 2009-06-05 | 2017-07-21 | 바스프 에스이 | 화학 기계적 평탄화(ＣＭＰ)를 위한 ＣｅＯ２ 나노입자 코팅된 라스베리형 금속 산화물 나노구조체 |
| WO2011058952A1 (ja) * | 2009-11-11 | 2011-05-19 | 株式会社クラレ | 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法 |
| KR101894712B1 (ko) | 2010-09-08 | 2018-09-04 | 바스프 에스이 | 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법 |
| SG191877A1 (en) * | 2011-01-25 | 2013-08-30 | Hitachi Chemical Co Ltd | Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material |
| US8828874B2 (en) * | 2011-03-28 | 2014-09-09 | Sinmat, Inc. | Chemical mechanical polishing of group III-nitride surfaces |
| JP5881394B2 (ja) * | 2011-12-06 | 2016-03-09 | 日揮触媒化成株式会社 | シリカ系複合粒子およびその製造方法 |
| JP5787745B2 (ja) | 2011-12-26 | 2015-09-30 | 日揮触媒化成株式会社 | シリカ系複合粒子の製造方法 |
| US9000557B2 (en) * | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
| JP2015169967A (ja) | 2014-03-04 | 2015-09-28 | 株式会社リコー | 情報処理システム、情報処理方法およびプログラム |
| JP6283939B2 (ja) | 2014-03-25 | 2018-02-28 | 株式会社富士通ゼネラル | 天井埋込型空気調和機 |
| JP6352060B2 (ja) * | 2014-06-06 | 2018-07-04 | 花王株式会社 | 酸化珪素膜研磨用研磨液組成物 |
| KR20190091579A (ko) * | 2015-01-12 | 2019-08-06 | 버슘머트리얼즈 유에스, 엘엘씨 | 화학적 기계적 평탄화 조성물용 복합 연마 입자 및 이를 사용하는 방법 |
-
2016
- 2016-01-12 KR KR1020197022601A patent/KR20190091579A/ko not_active Application Discontinuation
- 2016-01-12 CN CN201680005509.2A patent/CN107109136A/zh active Pending
- 2016-01-12 SG SG11201705419RA patent/SG11201705419RA/en unknown
- 2016-01-12 US US14/993,128 patent/US10109493B2/en active Active
- 2016-01-12 TW TW107102774A patent/TW201817835A/zh unknown
- 2016-01-12 TW TW105100853A patent/TWI654288B/zh active
- 2016-01-12 KR KR1020177022424A patent/KR102240249B1/ko active IP Right Grant
- 2016-01-12 CN CN202210363963.2A patent/CN114621686A/zh active Pending
- 2016-01-12 EP EP16737708.4A patent/EP3245262B1/en active Active
- 2016-01-12 JP JP2017536539A patent/JP6581198B2/ja active Active
- 2016-01-12 WO PCT/US2016/012993 patent/WO2016115096A1/en active Application Filing
- 2016-07-12 US US15/208,334 patent/US10418247B2/en active Active
-
2017
- 2017-06-25 IL IL253158A patent/IL253158B/en active IP Right Grant
-
2018
- 2018-09-09 US US16/125,724 patent/US10669449B2/en active Active
-
2019
- 2019-07-16 JP JP2019131417A patent/JP7130608B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI823321B (zh) * | 2021-04-02 | 2023-11-21 | 南韓商Ｓｋｃ索密思有限公司 | 半導體製程用拋光組合物以及使用拋光組合物的半導體裝置的製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102240249B1 (ko) | 2021-04-13 |
| CN114621686A (zh) | 2022-06-14 |
| TW201625767A (zh) | 2016-07-16 |
| JP6581198B2 (ja) | 2019-09-25 |
| EP3245262A1 (en) | 2017-11-22 |
| WO2016115096A1 (en) | 2016-07-21 |
| US10418247B2 (en) | 2019-09-17 |
| US20170133236A1 (en) | 2017-05-11 |
| US10109493B2 (en) | 2018-10-23 |
| US10669449B2 (en) | 2020-06-02 |
| JP7130608B2 (ja) | 2022-09-05 |
| US20160200944A1 (en) | 2016-07-14 |
| TWI654288B (zh) | 2019-03-21 |
| KR20190091579A (ko) | 2019-08-06 |
| SG11201705419RA (en) | 2017-07-28 |
| EP3245262B1 (en) | 2021-07-21 |
| JP2018506618A (ja) | 2018-03-08 |
| JP2019199613A (ja) | 2019-11-21 |
| EP3245262A4 (en) | 2018-07-04 |
| CN107109136A (zh) | 2017-08-29 |
| KR20170105556A (ko) | 2017-09-19 |
| IL253158A0 (en) | 2017-08-31 |
| IL253158B (en) | 2021-04-29 |
| US20200115590A1 (en) | 2020-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI654288B (zh) | 用於化學機械平坦化組合物之複合硏磨粒及其使用方法 | |
| CN107267118B (zh) | 复合颗粒、其精制方法及用途 | |
| KR102493753B1 (ko) | 복합 입자, 정제 방법 및 이의 용도 |