SG11201705419RA - Composite abrasive particles for chemical mechanical planarization composition and method of use thereof - Google Patents
Composite abrasive particles for chemical mechanical planarization composition and method of use thereofInfo
- Publication number
- SG11201705419RA SG11201705419RA SG11201705419RA SG11201705419RA SG11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA
- Authority
- SG
- Singapore
- Prior art keywords
- chemical mechanical
- abrasive particles
- mechanical planarization
- composite abrasive
- planarization composition
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562102319P | 2015-01-12 | 2015-01-12 | |
| US201562221379P | 2015-09-21 | 2015-09-21 | |
| PCT/US2016/012993 WO2016115096A1 (en) | 2015-01-12 | 2016-01-12 | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201705419RA true SG11201705419RA (en) | 2017-07-28 |
Family
ID=56367079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201705419RA SG11201705419RA (en) | 2015-01-12 | 2016-01-12 | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US10109493B2 (ja) |
| EP (1) | EP3245262B1 (ja) |
| JP (2) | JP6581198B2 (ja) |
| KR (2) | KR102240249B1 (ja) |
| CN (2) | CN107109136A (ja) |
| IL (1) | IL253158B (ja) |
| SG (1) | SG11201705419RA (ja) |
| TW (2) | TWI654288B (ja) |
| WO (1) | WO2016115096A1 (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201705419RA (en) * | 2015-01-12 | 2017-07-28 | Versum Mat Us Llc | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| JP6560155B2 (ja) * | 2016-04-20 | 2019-08-14 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法 |
| WO2018131508A1 (ja) * | 2017-01-16 | 2018-07-19 | 日揮触媒化成株式会社 | 研磨組成物 |
| JP6694653B2 (ja) * | 2017-04-10 | 2020-05-20 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法並びに合成石英ガラス基板の研磨方法 |
| US20190127607A1 (en) * | 2017-10-27 | 2019-05-02 | Versum Materials Us, Llc | Composite Particles, Method of Refining and Use Thereof |
| CN113913156B (zh) * | 2017-10-31 | 2022-06-24 | Hoya株式会社 | 研磨液、玻璃基板的制造方法以及磁盘的制造方法 |
| JP6936183B2 (ja) * | 2018-04-24 | 2021-09-15 | 信越化学工業株式会社 | 合成石英ガラス基板用の研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法 |
| US11078417B2 (en) | 2018-06-29 | 2021-08-03 | Versum Materials Us, Llc | Low oxide trench dishing chemical mechanical polishing |
| US11718767B2 (en) * | 2018-08-09 | 2023-08-08 | Versum Materials Us, Llc | Chemical mechanical planarization composition for polishing oxide materials and method of use thereof |
| US11180678B2 (en) * | 2018-10-31 | 2021-11-23 | Versum Materials Us, Llc | Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process |
| US11608451B2 (en) | 2019-01-30 | 2023-03-21 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates |
| SG11202108772PA (en) * | 2019-02-13 | 2021-09-29 | Tokuyama Corp | Onium salt-containing treatment liquid for semiconductor wafers |
| US20240297049A1 (en) | 2019-10-24 | 2024-09-05 | Versum Materials Us, Llc | High Oxide Removal Rates Shallow Trench Isolation Chemical Mechanical Planarization Compositions |
| US20240070590A1 (en) | 2019-11-01 | 2024-02-29 | Nec Corporation | Analyzing apparatus, control method, and storage medium |
| TWI790509B (zh) | 2019-12-04 | 2023-01-21 | 美商慧盛材料美國責任有限公司 | 高氧化物膜移除速率的淺溝隔離(sti)化學機械平坦化(cmp)研磨 |
| US11254839B2 (en) | 2019-12-12 | 2022-02-22 | Versum Materials Us, Llc | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
| EP4073187A4 (en) * | 2019-12-12 | 2023-12-13 | Versum Materials US, LLC | PLANARIZATION BY CHEMICAL-MECHANICAL POLISHING OF INSULATION BY SHALLOW TRENCHES WITH LOW OXIDE TRENCH BENDING |
| CN115197645B (zh) * | 2021-04-02 | 2024-02-20 | Sk恩普士有限公司 | 半导体工艺用抛光组合物以及半导体器件的制造方法 |
| CN118251471A (zh) * | 2021-10-05 | 2024-06-25 | 弗萨姆材料美国有限责任公司 | 用于浅沟槽隔离的化学机械平面化抛光 |
| WO2023240260A1 (en) * | 2022-06-10 | 2023-12-14 | Saint-Gobain Ceramics & Plastics, Inc. | Chemical mechanical planarization slurry and method of polishing a substrate |
| WO2024173029A1 (en) * | 2023-02-17 | 2024-08-22 | Versum Materials Us, Llc | Chemical mechanical planarization for shallow trench isolation |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| JPH03202269A (ja) * | 1989-10-12 | 1991-09-04 | Nalco Chem Co | 低ナトリウム低金属シリカ研磨スラリー |
| DE69108546T2 (de) * | 1991-05-28 | 1995-11-30 | Rodel Inc | Polierbreie aus Silika mit geringem Gehalt an Natrium und an Metallen. |
| WO2000079577A1 (fr) * | 1999-06-18 | 2000-12-28 | Hitachi Chemical Co., Ltd. | Compose abrasif pour polissage cmp, procede de polissage d'un substrat, procede de fabrication d'un dispositif a semiconducteur utilisant ledit compose, et additif pour compose abrasif cmp |
| JP2001007060A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Ｃｍｐ研磨剤及び基板の研磨方法 |
| WO2001060940A1 (en) | 2000-02-16 | 2001-08-23 | Rodel Inc | Biocides for polishing slurries |
| JP2005500173A (ja) * | 2001-08-20 | 2005-01-06 | サムソン コーニング カンパニー，リミテッド | シリカ−コーティングされたセリアを含む研磨スラリー |
| DE10204471C1 (de) * | 2002-02-05 | 2003-07-03 | Degussa | Wässerige Dispersion enthaltend mit Ceroxid umhülltes Siliciumdioxidpulver, Verfahren zu deren Herstellung und Verwendung |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6918820B2 (en) | 2003-04-11 | 2005-07-19 | Eastman Kodak Company | Polishing compositions comprising polymeric cores having inorganic surface particles and method of use |
| JP4311247B2 (ja) * | 2004-03-19 | 2009-08-12 | 日立電線株式会社 | 研磨用砥粒、研磨剤、研磨液の製造方法 |
| EP2438133B1 (en) * | 2009-06-05 | 2018-07-11 | Basf Se | Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2 |
| WO2011058952A1 (ja) * | 2009-11-11 | 2011-05-19 | 株式会社クラレ | 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法 |
| KR101894712B1 (ko) * | 2010-09-08 | 2018-09-04 | 바스프 에스이 | 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법 |
| TWI593791B (zh) | 2011-01-25 | 2017-08-01 | 日立化成股份有限公司 | Ｃｍｐ研磨液及其製造方法、複合粒子的製造方法以及基體的研磨方法 |
| US8828874B2 (en) * | 2011-03-28 | 2014-09-09 | Sinmat, Inc. | Chemical mechanical polishing of group III-nitride surfaces |
| JP5881394B2 (ja) * | 2011-12-06 | 2016-03-09 | 日揮触媒化成株式会社 | シリカ系複合粒子およびその製造方法 |
| JP5787745B2 (ja) | 2011-12-26 | 2015-09-30 | 日揮触媒化成株式会社 | シリカ系複合粒子の製造方法 |
| US9000557B2 (en) * | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
| JP2015169967A (ja) | 2014-03-04 | 2015-09-28 | 株式会社リコー | 情報処理システム、情報処理方法およびプログラム |
| JP6283939B2 (ja) | 2014-03-25 | 2018-02-28 | 株式会社富士通ゼネラル | 天井埋込型空気調和機 |
| JP6352060B2 (ja) * | 2014-06-06 | 2018-07-04 | 花王株式会社 | 酸化珪素膜研磨用研磨液組成物 |
| SG11201705419RA (en) * | 2015-01-12 | 2017-07-28 | Versum Mat Us Llc | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
-
2016
- 2016-01-12 SG SG11201705419RA patent/SG11201705419RA/en unknown
- 2016-01-12 CN CN201680005509.2A patent/CN107109136A/zh active Pending
- 2016-01-12 EP EP16737708.4A patent/EP3245262B1/en active Active
- 2016-01-12 TW TW105100853A patent/TWI654288B/zh active
- 2016-01-12 KR KR1020177022424A patent/KR102240249B1/ko active IP Right Grant
- 2016-01-12 JP JP2017536539A patent/JP6581198B2/ja active Active
- 2016-01-12 KR KR1020197022601A patent/KR20190091579A/ko not_active Application Discontinuation
- 2016-01-12 TW TW107102774A patent/TW201817835A/zh unknown
- 2016-01-12 CN CN202210363963.2A patent/CN114621686A/zh active Pending
- 2016-01-12 US US14/993,128 patent/US10109493B2/en active Active
- 2016-01-12 WO PCT/US2016/012993 patent/WO2016115096A1/en active Application Filing
- 2016-07-12 US US15/208,334 patent/US10418247B2/en active Active
-
2017
- 2017-06-25 IL IL253158A patent/IL253158B/en active IP Right Grant
-
2018
- 2018-09-09 US US16/125,724 patent/US10669449B2/en active Active
-
2019
- 2019-07-16 JP JP2019131417A patent/JP7130608B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018506618A (ja) | 2018-03-08 |
| EP3245262A1 (en) | 2017-11-22 |
| US10109493B2 (en) | 2018-10-23 |
| CN107109136A (zh) | 2017-08-29 |
| TW201817835A (zh) | 2018-05-16 |
| US20200115590A1 (en) | 2020-04-16 |
| US10418247B2 (en) | 2019-09-17 |
| TW201625767A (zh) | 2016-07-16 |
| US10669449B2 (en) | 2020-06-02 |
| CN114621686A (zh) | 2022-06-14 |
| WO2016115096A1 (en) | 2016-07-21 |
| KR102240249B1 (ko) | 2021-04-13 |
| US20170133236A1 (en) | 2017-05-11 |
| IL253158B (en) | 2021-04-29 |
| KR20170105556A (ko) | 2017-09-19 |
| KR20190091579A (ko) | 2019-08-06 |
| JP2019199613A (ja) | 2019-11-21 |
| EP3245262A4 (en) | 2018-07-04 |
| US20160200944A1 (en) | 2016-07-14 |
| EP3245262B1 (en) | 2021-07-21 |
| JP7130608B2 (ja) | 2022-09-05 |
| JP6581198B2 (ja) | 2019-09-25 |
| IL253158A0 (en) | 2017-08-31 |
| TWI654288B (zh) | 2019-03-21 |
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