SG11201705419RA - Composite abrasive particles for chemical mechanical planarization composition and method of use thereof - Google Patents

Composite abrasive particles for chemical mechanical planarization composition and method of use thereof

Info

Publication number
SG11201705419RA
SG11201705419RA SG11201705419RA SG11201705419RA SG11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA
Authority
SG
Singapore
Prior art keywords
chemical mechanical
abrasive particles
mechanical planarization
composite abrasive
planarization composition
Prior art date
Application number
SG11201705419RA
Other languages
English (en)
Inventor
Hongjun Zhou
Jo-Ann Theresa Schwartz
Malcolm Grief
Xiaobo Shi
Krishna P Murella
Steven Charles Winchester
John Edward Quincy Hughes
Mark Leonard O'neill
Andrew J Dodd
Dnyanesh Chandrakant Tamboli
Reinaldo Mario Machado
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of SG11201705419RA publication Critical patent/SG11201705419RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201705419RA 2015-01-12 2016-01-12 Composite abrasive particles for chemical mechanical planarization composition and method of use thereof SG11201705419RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562102319P 2015-01-12 2015-01-12
US201562221379P 2015-09-21 2015-09-21
PCT/US2016/012993 WO2016115096A1 (en) 2015-01-12 2016-01-12 Composite abrasive particles for chemical mechanical planarization composition and method of use thereof

Publications (1)

Publication Number Publication Date
SG11201705419RA true SG11201705419RA (en) 2017-07-28

Family

ID=56367079

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705419RA SG11201705419RA (en) 2015-01-12 2016-01-12 Composite abrasive particles for chemical mechanical planarization composition and method of use thereof

Country Status (9)

Country Link
US (3) US10109493B2 (ja)
EP (1) EP3245262B1 (ja)
JP (2) JP6581198B2 (ja)
KR (2) KR20190091579A (ja)
CN (2) CN107109136A (ja)
IL (1) IL253158B (ja)
SG (1) SG11201705419RA (ja)
TW (2) TW201817835A (ja)
WO (1) WO2016115096A1 (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201817835A (zh) * 2015-01-12 2018-05-16 美商慧盛材料美國責任有限公司 用於化學機械平坦化組合物之複合研磨粒及其使用方法
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
JP6560155B2 (ja) * 2016-04-20 2019-08-14 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法
TWI773717B (zh) * 2017-01-16 2022-08-11 日商日揮觸媒化成股份有限公司 研磨組合物及研磨基板之製造方法
JP6694653B2 (ja) * 2017-04-10 2020-05-20 信越化学工業株式会社 合成石英ガラス基板用研磨剤及びその製造方法並びに合成石英ガラス基板の研磨方法
US20190127607A1 (en) * 2017-10-27 2019-05-02 Versum Materials Us, Llc Composite Particles, Method of Refining and Use Thereof
JP6692006B2 (ja) * 2017-10-31 2020-05-13 Hoya株式会社 研磨液、ガラス基板の製造方法、及び、磁気ディスクの製造方法
JP6936183B2 (ja) * 2018-04-24 2021-09-15 信越化学工業株式会社 合成石英ガラス基板用の研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法
US11078417B2 (en) 2018-06-29 2021-08-03 Versum Materials Us, Llc Low oxide trench dishing chemical mechanical polishing
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
US11180678B2 (en) * 2018-10-31 2021-11-23 Versum Materials Us, Llc Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
EP4048746A4 (en) * 2019-10-24 2023-11-29 Versum Materials US, LLC CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR SHALLOW TRENCH INSULATION AT HIGH OXIDE REMOVAL RATES
US20240070590A1 (en) 2019-11-01 2024-02-29 Nec Corporation Analyzing apparatus, control method, and storage medium
US20230020073A1 (en) * 2019-12-04 2023-01-19 Versum Materials Us, Llc High Oxide Film Removal Rate Shallow Trench (STI) Chemical Mechanical Planarization (CMP) Polishing
JP2023506487A (ja) * 2019-12-12 2023-02-16 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 低酸化物トレンチディッシングシャロートレンチアイソレーション化学的機械平坦化研磨
US11254839B2 (en) 2019-12-12 2022-02-22 Versum Materials Us, Llc Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing
JP7296504B2 (ja) * 2021-04-02 2023-06-22 エスケー エンパルス カンパニー リミテッド 半導体工程用研磨組成物および研磨組成物を適用した半導体素子の製造方法
WO2023059999A1 (en) * 2021-10-05 2023-04-13 Versum Materials Us, Llc Chemical mechanical planarization polishing for shallow trench isolation
WO2023240260A1 (en) * 2022-06-10 2023-12-14 Saint-Gobain Ceramics & Plastics, Inc. Chemical mechanical planarization slurry and method of polishing a substrate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
JPH03202269A (ja) * 1989-10-12 1991-09-04 Nalco Chem Co 低ナトリウム低金属シリカ研磨スラリー
EP0520109B1 (en) * 1991-05-28 1995-03-29 Rodel, Inc. Low sodium, low metals silica polishing slurries
WO2000079577A1 (fr) * 1999-06-18 2000-12-28 Hitachi Chemical Co., Ltd. Compose abrasif pour polissage cmp, procede de polissage d'un substrat, procede de fabrication d'un dispositif a semiconducteur utilisant ledit compose, et additif pour compose abrasif cmp
JP2001007060A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
WO2001060940A1 (en) 2000-02-16 2001-08-23 Rodel Inc Biocides for polishing slurries
WO2003016424A1 (en) * 2001-08-20 2003-02-27 Samsung Corning Co., Ltd. Polishing slurry comprising silica-coated ceria
DE10204471C1 (de) * 2002-02-05 2003-07-03 Degussa Wässerige Dispersion enthaltend mit Ceroxid umhülltes Siliciumdioxidpulver, Verfahren zu deren Herstellung und Verwendung
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
JP4311247B2 (ja) * 2004-03-19 2009-08-12 日立電線株式会社 研磨用砥粒、研磨剤、研磨液の製造方法
US20120077419A1 (en) 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
US9536752B2 (en) * 2009-11-11 2017-01-03 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
TWI538970B (zh) * 2010-09-08 2016-06-21 巴斯夫歐洲公司 化學機械研磨含有氧化矽介電質薄膜及多晶矽及／或氮化矽薄膜之基材的方法
US9447306B2 (en) 2011-01-25 2016-09-20 Hitachi Chemical Company, Ltd. CMP polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
US8828874B2 (en) * 2011-03-28 2014-09-09 Sinmat, Inc. Chemical mechanical polishing of group III-nitride surfaces
JP5881394B2 (ja) * 2011-12-06 2016-03-09 日揮触媒化成株式会社 シリカ系複合粒子およびその製造方法
JP5787745B2 (ja) 2011-12-26 2015-09-30 日揮触媒化成株式会社 シリカ系複合粒子の製造方法
US9000557B2 (en) * 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
JP2015169967A (ja) 2014-03-04 2015-09-28 株式会社リコー 情報処理システム、情報処理方法およびプログラム
JP6283939B2 (ja) 2014-03-25 2018-02-28 株式会社富士通ゼネラル 天井埋込型空気調和機
JP6352060B2 (ja) * 2014-06-06 2018-07-04 花王株式会社 酸化珪素膜研磨用研磨液組成物
TW201817835A (zh) * 2015-01-12 2018-05-16 美商慧盛材料美國責任有限公司 用於化學機械平坦化組合物之複合研磨粒及其使用方法

Also Published As

Publication number Publication date
CN107109136A (zh) 2017-08-29
TWI654288B (zh) 2019-03-21
EP3245262B1 (en) 2021-07-21
CN114621686A (zh) 2022-06-14
IL253158B (en) 2021-04-29
JP2019199613A (ja) 2019-11-21
KR20170105556A (ko) 2017-09-19
US20170133236A1 (en) 2017-05-11
IL253158A0 (en) 2017-08-31
TW201625767A (zh) 2016-07-16
WO2016115096A1 (en) 2016-07-21
EP3245262A1 (en) 2017-11-22
TW201817835A (zh) 2018-05-16
US10109493B2 (en) 2018-10-23
US10669449B2 (en) 2020-06-02
JP2018506618A (ja) 2018-03-08
US20200115590A1 (en) 2020-04-16
KR20190091579A (ko) 2019-08-06
US20160200944A1 (en) 2016-07-14
JP6581198B2 (ja) 2019-09-25
EP3245262A4 (en) 2018-07-04
JP7130608B2 (ja) 2022-09-05
US10418247B2 (en) 2019-09-17
KR102240249B1 (ko) 2021-04-13

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