TW201817026A - 太陽能電池及其製造方法 - Google Patents

太陽能電池及其製造方法 Download PDF

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TW201817026A
TW201817026A TW106128557A TW106128557A TW201817026A TW 201817026 A TW201817026 A TW 201817026A TW 106128557 A TW106128557 A TW 106128557A TW 106128557 A TW106128557 A TW 106128557A TW 201817026 A TW201817026 A TW 201817026A
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semiconductor layer
semiconductor
transparent conductive
layer
conductive layer
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TW106128557A
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TWI629805B (zh
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徐正昊
權純範
金起德
金鐘寅
朴昶均
辛源錫
林慶辰
陳法鍾
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南韓商周星工程股份有限公司
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Abstract

本發明提供一種太陽能電池的製造方法，包含在一半導體晶圓的一上表面形成一第一半導體層的步驟，和在該半導體晶圓的一下表面形成具有一極性與該第一半導體層的一極性不同的一第二半導體層的步驟；在該第一半導體層的一上表面形成一第一透明導電層以向外暴露該第一半導體層的一部分，且在該第二半導體層的一下表面形成一第二透明導電層以向外暴露該第二半導體層的一部分；以及該第一透明導電層及該第二透明導電層中至少一者上進行一電漿處理程序；其中該電漿處理程序包含移除該第一半導體層的向外暴露的該部分和該第二半導體層的向外暴露的該部分的步驟。

Description

太陽能電池及其製造方法
本發明涉及一種太陽能電池，更具體地涉及一種基於晶圓型太陽能電池和薄膜型太陽能電池的組合的太陽能電池。
太陽能電池是基於半導體的特性將光能轉換為電能的裝置。
太陽能電池具有正（P）型半導體和負（N）型半導體彼此接合的PN接面結構。當陽光入射到具有PN接面結構的太陽能電池時，在半導體中通過入射陽光的能量產生電洞和電子。此時，由於在PN接面中產生的電場，電洞（+）移動到P型半導體，電子（-）移動到N型半導體，從而產生電勢以產生電。
太陽能電池可以分為晶圓型太陽能電池和薄膜型太陽能電池。
晶圓型太陽能電池是通過使用半導體材料本身（例如矽晶片）作為基板所製造的太陽能電池。薄膜型太陽能電池是通過在如玻璃的基板上以薄膜類型形成半導體而製造的太陽能電池。
晶圓型太陽能電池的效率比薄膜型太陽能電池更好，與晶圓型太陽能電池相比，薄膜型太陽能電池具有製造成本低的優點。
因此，已經提出了基於晶圓型太陽能電池和薄膜型太陽能電池組合的太陽能電池。以下，參照圖式對習知技術太陽能電池進行說明。
圖1A至圖1E是根據習知技術實施例的製造太陽能電池的製程的示意性製程剖面圖。
首先，如圖1A所示，製備半導體晶圓10。
隨後，如圖1B所示，在半導體晶圓10的上表面上形成第一半導體層20，並且在半導體晶圓10的下表面上形成第二半導體層30。在這種情況下，由於製程特性(process characteristic)，第一半導體層20形成在半導體晶圓10的側表面以及半導體晶圓10的上表面上，第二半導體層30形成在半導體晶圓10的側表面以及半導體晶圓10的下表面上。因此，如圖所示，第一半導體層20和第二半導體層30可以在半導體晶圓10的側表面彼此連接。
隨後，如圖1C所示，在第一半導體層20的上表面上形成第一透明導電層40，在第二半導體層30的下表面上形成第二透明導電層50。在這種情況下，由於製程特性，第一透明導電層40形成在第一半導體層20的側表面以及第一半導體層20的上表面，第二透明導電層50形成在第二半導體層30的側表面以及第二半導體層30的下表面。因此，如圖所示，第一透明導電層40和第二透明導電層50可以在半導體晶圓10的側表面處彼此連接。
隨後，如圖1D所示，在第一透明導電層40的上表面上形成第一電極60，在第二透明導電層50的下表面上形成第二電極70。
隨後，如圖1E所示，藉由移除第一透明導電層40、第一半導體層20和半導體晶圓10中每一個的邊緣區域而形成一分離部80。
在半導體晶圓10的側表面處形成的第一透明導電層40和第二透明導電層50之間的電性連接被分離部80切斷，且在半導體晶圓10的側表面處形成的第一半導體層20和第二半導體層30的電性連接被分離部80切斷，從而防止其間發生短路。
然而，習知技術的方法有以下缺點。
首先，在習知技術中，為了防止圖1E的上述過程中的短路而形成分離部80，在這種情況下，如電洞或電子的載子被截留在分離部80的區域中，導致太陽能電池的效率降低的問題。
並且，參照圖1E的箭頭所示的放大圖，被視為污染的顆粒90位於第一透明導電層40的上表面和第二透明導電層50的下表面層。顆粒90在形成第一透明導電層40和第二透明導電層50的步驟中產生，也可以在形成分離部80的步驟中產生。如上所述，若顆粒90位於第一透明導電層40的上表面和第二透明導電層50的下表面，太陽光的穿透率(transmittance)則會因顆粒90而減少，此外，電流的流動也會受到顆粒90的阻礙導致太陽能電池的效率降低的問題。
本發明旨在解決習知技術的上述問題，其目的是提供一種太陽能電池及其製造方法，即使沒有形成分離部也能避免半導體晶圓的側表面發生短路，且可有效地去除在透明導電層上的顆粒，從而提高效率。
為了實現上述目的，本發明提供了一種製造太陽能電池的方法，該方法包含：在一半導體晶圓的一上表面形成一第一半導體層的步驟，和在該半導體晶圓的一下表面形成具有一極性與該第一半導體層的一極性不同的一第二半導體層的步驟；在該第一半導體層的一上表面形成一第一透明導電層以向外暴露該第一半導體層的一部分，且在該第二半導體層的一下表面形成一第二透明導電層以向外暴露該第二半導體層的一部分；在該第一透明導電層及該第二透明導電層至少一者上進行一電漿處理程序，其中該電漿處理程序包含移除該第一半導體層的向外暴露的該部分和該第二半導體層的向外暴露的該部分的步驟。
形成該第一半導體層的步驟可以包含在該半導體晶圓的一側表面形成該第一半導體層的步驟；和形成該第二半導體層的步驟可以包含在該半導體晶圓的一側表面形成該第二半導體層的步驟。
移除該第一半導體層的向外暴露的該部分的該電漿處理程序可以包含在該半導體晶圓的該側表面形成一部分；和移除該第二半導體層的向外暴露的該部分的該電漿處理程序可以包含在該半導體晶圓的該側表面形成一部分。
在該半導體晶圓的該側表面形成的該第一半導體層和在該半導體晶圓的該側表面形成的該第二半導體層可以相互連接；以及在該第一半導體層和該第二半導體層之間的一連接可以藉由該電漿處理程序切斷。
該電漿處理程序可以包含移除在該第一透明導電層和該第二透明導電層中至少一者的一表面上的顆粒的步驟。
該第一半導體層的一端和一另一端在該電漿處理程序之後可以分別與該第一透明導電層的一端和一另一端相匹配。
此外，本發明提供了一種製造太陽能電池的方法，該方法包含：在一半導體晶圓的一上表面形成一第一半導體層的步驟和在該半導體晶圓的一下表面上形成一第二半導體層的步驟，該第一半導體層和該第二半導體層在該半導體晶圓的一側表面相互連接；在該第一半導體層的一上表面和該第二半導體層的一下表面分別形成一第一透明導電層和一第二透明導電層以向外暴露該第一半導體層在該半導體晶圓的該側表面的一部分與該第二半導體層在該半導體晶圓的該側表面的一部分；藉由將該第一透明導電層與該第二透明導電層作為一光罩移除在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該外部分與該第二半導體層的向外暴露的該部分暴露部分的步驟，以切斷該第一半導體層和該第二半導體層之間的一電性連接；以及移除在該第一透明導電層和該第二透明導電層中至少一者的一表面的顆粒。
移除位在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該部分與該第二半導體層的向外暴露的該部分的步驟和移除顆粒的步驟可以同時執行。
移除位在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該部分與該第二半導體層的向外暴露的該部分的步驟和移除顆粒的步驟藉由一電漿處理程序可以同時執行。
在移除位在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該部分與該第二半導體層的向外暴露的該部分的步驟之後，該第一半導體層的一端和另一端可以分別與該第一透明導電層的一端和另一端相匹配。
另外，本發明提供了一個太陽能電池，包含：一半導體晶圓； 在該半導體晶圓的一上表面上設置一第一半導體層；在該第一半導體層的一上表面上設置一第一透明導電層； 在該半導體晶圓的一下表面上設置一第二半導體層，該第二半導體層具有與該第一半導體層的一極性不同的一極性；以及在該第二半導體層的一下表面上設置一第二透明導電層；其中該第一半導體層的一端和一另一端分別與該第一透明導電層的一端和一另一端匹配。
該第二半導體層的一端和一另一端可以分別與該第二透明導電層的一端和一另一端匹配。
該第一半導體層的該端和該另一端可不與該半導體晶圓一端和一另一端匹配；該第二半導體層的該端和該另一端可不與該半導體晶圓該端和該另一端匹配。
根據本發明，可得到以下效果。
根據本發明的實施例，透過在第一透明導電層的上表面和第二透明導電層的下表面進行電漿處理程序，切斷在半導體晶圓的側表面處的第一半導體層與第二半導體層之間的連接，從而防止其間發生短路。另外，透過在第一透明導電層的上表面和第二透明導電層的下表面進行電漿處理程序，移除在第一透明導電層的上表面和第二透明導電層的下表面出現的顆粒，從而解決了太陽光的穿透率降低並且電流的流動受到顆粒的阻礙的問題。
本發明的優點和特點及其實現方法將通過下列實施例的描述參考圖式來闡明。但是，本發明可以以不同的形式實施，不應被解釋為限於本文所闡述的實施例。提供這些實施例，以便徹底和完整的揭示本發明，並將向本領域技術人員充分傳達本發明的範圍。此外，本發明僅由申請專利範圍限定。
用於描述本發明實施例的圖形中所示的形狀、尺寸、比例、角度和數量僅是一個實施例，因此，本發明不限於所示的細節。相同的圖式標記始終表示相同的元件。在下面的描述中，當確定相關已知功能或配置的詳細描述不必要地模糊本發明的要點時，將省略詳細描述。在使用本說明書中描述的「包含」、「具有」的情況下，可以添加另一部分，除非使用「僅」。 除非相反，單數形式的術語可以包括複數形式。
在解釋元件時，儘管沒有明確的描述，元件被解釋為包含誤差範圍。
在描述位置關係時，例如，當兩個部分之間的位置關係被描述為「上」、「之上」、「下」和「下面」時，除非使用「僅」或「直接」，一個或多個其他部分可能放置在兩個部分之間。
在描述時間關係時，例如，當時間順序被描述為「之後」、「隨後」、「下一個」和「之前」時，除非使用「僅」或「直接」，可以包括不連續的情況。
應當理解，儘管術語「第一」，「第二」等可以用於描述各種元件，但這些元件不應受這些術語的限制。這些術語僅用於將一個元件與另一個元件區分開。例如，第一元件可以被稱為第二元件，並且類似地，第二元件可以被稱為第一元件，而不脫離本發明的範圍。
本發明的各種實施例的特徵可以部分或全部地彼此耦合或組合，並且可以彼此不同地相互操作，並且在技術上如本領域技術人員可以充分理解地驅動。本發明的實施例可以彼此獨立進行，也可以共同依賴關係進行。
以下，將參照圖式對本發明的實施例進行詳細說明。
圖2A至圖2E是根據本發明一實施例的製造太陽能電池的製程的示意性製程剖面圖。
首先，如圖2A所示，製備半導體晶圓100。
半導體晶圓100具有一定的導電極性。半導體晶圓100可以為一矽晶片，且具體來說，可為一N型矽晶片或P型矽晶片。儘管未繪示，半導體晶圓100的上表面和下表面可具有凹凸結構，且在此情況下，在下述的製程中，形成在半導體晶圓100的上表面和下表面上的層分別形成在該凹凸結構中。
隨後，如圖2B所示，第一半導體層200可形成在半導體晶圓100的一表面上（例如，半導體晶圓100的上表面），而第二半導體層300可形成在半導體晶圓100的另一個表面上（例如，半導體晶圓100的下表面）。
第一半導體層200可以薄膜的形式形成在半導體晶圓100的表面上，在這種情況下，第一半導體層200可與半導體晶圓100一起形成一PN接面。因此，若半導體晶圓100為N型矽晶片，第一半導體層200則可為P型半導體層。特別地，第一半導體層200可以由具有摻雜有硼（B）的III族元素的P型非晶矽所構成。通常，由於電洞的漂移遷移率低於電子的漂移遷移率，因此優選的是在靠近光接收表面的地方形成P型半導體層，以便最大限度地提高基於入射光的電洞的收集效率，因此，優選的是，靠近光接收表面的第一半導體層200為P型半導體層。
第二半導體層300以薄膜形式形成在半導體晶圓100的下表面上，在這種情況下，第一半導體層200的極性不同於第二半導體層300的極性。因此，若第一半導體層200為摻雜有III族元素(例如硼（B）)的P型半導體層，則第二半導體層300則是摻雜有五族元素(例如磷（P）)的N型半導體層。特別地，第二半導體層300可為N型非晶矽所構成。
第一半導體層200和第二半導體層300可以通過電漿輔助化學氣相沉積系統（plasma enhanced chemical vapor deposition，PECVD）製程而形成。在這種情況下，由於製程特性，第一半導體層200形成在半導體晶圓100的側表面以及半導體晶圓100的上表面上，且第二半導體層300形成在半導體晶圓100的側表面以及半導體晶圓100的下表面上。因此，如圖所示，第一半導體層200和第二半導體層300可以在半導體晶圓100的側表面處彼此連接。
形成第一半導體層200的步驟和形成第二半導體層300的步驟受不限於它們之間的順序。
隨後，如圖2C所示，第一透明導電層400形成在第一半導體層200的一表面（例如，第一半導體層200的上表面）上，第二透明導電層500形成在第二半導體層300的另一表面上（例如，第二半導體層300的下表面）。
第一透明導電層400保護第一半導體層200，收集在半導體晶圓100中產生的載子（例如電洞），並將收集的電洞移動到下述的第一電極（參見圖2E的參考符號600）。第二透明導電層500保護第二半導體層300，收集在半導體晶圓100中產生的載子（例如電子），並將收集的電子移動到下述的第二電極（參見圖2E的參考符號700）。
第一透明導電層400和第二透明導電層500可以由如氧化銦錫（ITO）、氫氧化鋅(ZnOH)、氧化鋅：硼(ZnO：B)、氧化鋅：鋁(ZnO：Al)、摻鋁氧化鋅(AZO)或含氧化鎢之銦氧化物(IWO) 等透明導電材料形成。
可藉由濺鍍製程(sputtering process)形成第一透明導電層400和第二透明導電層500。在這種情況下，藉由使用光罩，第一透明導電層400僅形成在第一半導體層200的上表面上，而不形成在第一半導體層200的側表面上，並且，第二透明導電層500僅形成在第二半導體層300的下表面上，而不形成在第二半導體層300的側表面上。因此，第一半導體層200和第二半導體層300在半導體晶圓100的側表面處暴露於外部。
在使用濺鍍製程形成第一透明導電層400和第二透明導電層500時，被視為污染成分的顆粒900會在第一透明導電層400的上表面和第二透明導電層500的下表面產生。顆粒900會降低陽光的穿透率(transmittance)並阻礙電流流動，從而降低太陽能電池的效率，因此顆粒900會在後續的步驟中被移除。
此外，形成第一透明導電層400的步驟和形成第二透明導電層500的步驟不受限於它們之間的順序。
隨後，如圖2D所示，在第一透明導電層400的上表面和第二透明導電層500的下表面上進行電漿處理程序(plasma treatment process)。
藉由這種手段，即當在第一透明導電層400的上表面和第二透明導電層500的下表面上進行電漿處理程序時，第一半導體層200和第二半導體層300在半導體晶圓100的側表面處暴露於外部的部分將被移除。因此，第一半導體層200和第二半導體層300之間在半導體晶圓100的側表面處的連接被切斷，從而防止其間發生短路。
在執行電漿處理程序時，第一透明導電層400和第二透明導電層500均可作為光罩，因此，已經第一半導體層200被移除的該部分的一端200a和另一端200b可分別匹配第一透明導電層400的一端400a和另一端400b，而第二半導體層300被移除的該部分的的一端300a和另一端300b可分別匹配第二透明導電層500的一端500a和另一端500b。
第一透明導電層400的端400a和端400b可不匹配半導體晶圓100的端100a和端100b，在此情況下，第一半導體層200的端200a和端200b不匹配半導體晶圓100的端100a和端100b。此外，第二透明導電層500的端500a和端500b可不匹配半導體晶圓100的端100a和端100b，在此情況下，第二半導體層300的端300a和端300b不匹配半導體晶圓100的端100a和端100b。
此外，當在第一透明導電層400的上表面和第二透明導電層500的下表面進行電漿處理程序時，在第一透明導電層的上表面和第二透明導電層500的下表面出現的顆粒900可被移除。
如上所述，根據本發明的實施例，藉由在第一透明導電層400的上表面和第二透明導電層500的下表面上進行電漿處理程序，在半導體晶圓100的側表面處切斷第一半導體層200和第二半導體層300之間的連接，以防止它們之間發生短路，並且，還除去了顆粒900，從而解決了顆粒900阻礙太陽光的穿透率和電流的流動的問題。即，切斷第一半導體層200和第二半導體層300之間的連接的步驟以及移除顆粒900的步驟可以藉由電漿處理程序同時進行。
可藉由執行電漿處理程序以蝕刻第一半導體層200、第二半導體層300和顆粒900，但不會蝕刻第一透明導電層400和第二透明導電層500。例如，可以使用鹵素電漿(如氯氣電漿(Cl2 電漿))。藉由照射氯氣電漿，氯氣可以經由射頻（RF）功率離子化以產生離子，且離子與構成第一半導體層200和第二半導體層300的矽元素，以及顆粒900結合，進而施行乾蝕刻。
第一透明導電層400的上表面和第二透明導電層500的下表面上的電漿處理程序不受限於它們之間的順序。
隨後，如圖2E所示，第一電極600形成在第一透明導電層400的一個表面上（如第一透明導電層400的上表面），而第二電極700形成在第二透明導電層500的另一個表面上（如第二透明導電層500的下表面）。
第一電極600作為太陽能電池的前表面，因此，第一電極600被圖案化成某種形式以將陽光透射到太陽能電池的內部。
第二電極700則作為太陽能電池的後表面，因此，可以完全形成在第二透明導電層500的下表面上而不用形成特定的圖案。然而，如圖所示，第二電極700也可以被圖案化成某種形式，在這種情況下，反射的太陽光也可以通過太陽能電池的後表面。
第一電極600和第二電極700可以由導電性良好的金屬材料形成，例如銀(Ag)、鋁(Al)、銀+鋁 (Ag + Al)、銀+鎂(Ag + Mg)、銀+錳(Ag + Mn)、銀+銻(Ag + Sb)、銀+鋅(Ag + Zn)、銀+鉬(Ag + Mo)、銀+鎳(Ag + Ni)、銀+銅(Ag + Cu)或Ag + Al + Zn。
第一電極600和第二電極700可以經由絲網印刷(screen printing)、噴墨印刷(inkjet printing)、凹版印刷(gravure printing)、凹板平板印刷(gravure offset printing)、反轉印刷(reverse printing)、柔版印刷(flexo printing)或微接觸印刷(micro contact printing)等印刷製程而形成。
形成第一電極600的步驟和形成第二電極700的步驟不受限於它們之間的順序。
圖2D所示的上述電漿處理程序可以在形成圖2E所示的第一電極600和第二電極700的步驟之後進行。
圖3A至圖3E是根據本發明另一實施例的製造太陽能電池的製程的示意性製程剖面圖。以下，不重複說明與圖2A至2E的實施例相同的元件。
首先，如圖3A所示，製備半導體晶圓100。
隨後，如圖3B所示，第一本質半導體層150形成在半導體晶圓100的一表面上（例如，半導體晶圓100的上表面），而第一半導體層200形成在第一本質半導體層150的上表面上。另外，第二本質半導體層250形成在半導體晶圓100的另一表面（例如，半導體晶圓100的下表面），而第二半導體層300形成在第二本質半導體層250的下表面上。
藉由使用電漿輔助化學氣相沉積系統（PECVD）製程，第一本質半導體層150可以經由形成本質（I）非晶矽層的過程，形成在半導體晶圓100的上表面上，而第二本質半導體層250可以經由形成本質（I）非晶矽層的過程，形成在半導體晶圓100的下表面上。
如圖2B的上述實施例的步驟，當藉由使用高濃度摻雜氣體在半導體晶圓100的表面上形成第一半導體層200或第二半導體層300時，由於高濃度摻雜氣體，在半導體晶圓100的表面存在缺陷發生的可能性。在本發明的另一實施例中，第一本質半導體層150形成在半導體晶圓100的上表面上，然後，第一半導體層200形成在第一本質半導體層150上，從而防止在半導體晶圓100的上表面發生缺陷。並且，第二本質半導體層250形成在半導體晶圓100的下表面上，然後，第二半導體層300形成在第二本質半導體層250的下表面上，從而防止在半導體晶圓100的下表面發生缺陷。
隨後，如圖3C所示，第一透明導電層400形成在第一半導體層200的一個表面上（例如，第一半導體層200的上表面），而第二透明導電層500形成在第二半導體層300的另一個表面上（例如，第二半導體層300的下表面）。
第一透明導電層400僅形成在第一半導體層200的上表面上，而不形成在第一半導體層200的側表面上，而第二透明導電層500僅形成在第二半導體層300的下表面上，而不形成在第二半導體層300的側表面上。因此，在半導體晶圓100的側表面的第一半導體層200和第二半導體層300暴露於外部。
此時，被視為污染成分的顆粒900在第一透明導電層400的上表面和第二透明導電層500的下表面產生。
隨後，如圖3D所示，在第一透明導電層400的上表面和第二透明導電層500的下表面施行電漿處理程序。
藉由這種手段，即在第一透明導電層400的上表面和第二透明導電層500的下表面上施行電漿處理程序，第一半導體層200和第二半導體層300於半導體晶圓100的側表面處暴露於外部的部分被移除，同時，一併除去顆粒900。
隨後，如圖3E所示，第一電極600形成在第一透明導電層400的一表面上（詳細地，第一透明導電層400的上表面），而第二電極700形成在第二透明導電層500的另一表面上（詳細地，第二透明導電層500的下表面）。
雖然沒有詳細繪示，在上述圖2A至圖2E的實施例和圖3A至圖3E的實施例中，第一半導體層200可以配置為依次形成在半導體晶圓100的上表面上的低濃度摻雜層和高濃度摻雜層；而第二半導體層300可以配置為依次形成在半導體晶圓100的下表面上的低濃度摻雜層和高濃度摻雜層。於此，低濃度和高濃度是相對的概念，低濃度摻雜層表示摻雜劑的濃度相對低於高濃度摻雜層。
圖4是表示通過測量根據實施例的太陽能電池的效率以及根據比較例的太陽能電池的效率所獲得的結果的示意圖。比較例涉及上述圖1A至圖1E中製造的太陽能電池，而實施例涉及如上述圖2A至圖2E製造的太陽能電池。
如圖4所示，可以看出，在實施例中太陽能電池的效率、開路電壓(open-circuit voltage，Voc)和填充因子(fill factor，FF)均優於比較例。
在上文中，本發明的實施例已經參照圖式更詳細地描述，但本發明不限於實施例，可以在不離開本發明的技術精神的範圍內進行各種修改。因此，應當理解，上述實施例從各方面都是示例性的，而不是限制性的。應當理解，本發明的範圍不是由詳細描述定義，而是由下述申請專利範圍定義，並且申請專利範圍的含義和範圍以及從其等效概念推斷的所有變化或修改形式都包括在本發明的範圍內。
10‧‧‧半導體晶圓
20‧‧‧第一半導體層
30‧‧‧第二半導體層
40‧‧‧第一透明導電層
50‧‧‧第二透明導電層
60‧‧‧第一電極
70‧‧‧第二電極
80‧‧‧分離部
90‧‧‧顆粒
100‧‧‧半導體晶圓
100a、100b‧‧‧端
150‧‧‧第一本質半導體層
200‧‧‧第一半導體層
200a、200b‧‧‧端
250‧‧‧第二本質半導體層
300‧‧‧第二半導體層
300a、300b‧‧‧端
400‧‧‧第一透明導電層
400a、400b‧‧‧端
500‧‧‧第二透明導電層
500a、500b‧‧‧端
600‧‧‧第一電極
700‧‧‧第二電極
圖1A至圖1E是根據習知技術的實施例的製造太陽能電池的製程的示意性製程剖面圖。 圖2A至圖2E是根據本發明一實施例的製造太陽能電池的製程的示意性製程剖面圖。 圖3A至圖3E是根據本發明另一實施例的製造太陽能電池的製程的示意性製程剖面圖。 圖4是通過測量根據實施例的太陽能電池的效率以及根據比較例的太陽能電池的效率所獲得的結果的示意圖。

Claims (12)

  1. 一種製造太陽能電池的方法，該方法包含：在一半導體晶圓的一上表面形成一第一半導體層，和在該半導體晶圓的一下表面形成具有與該第一半導體層的極性不同的極性的一第二半導體層；在該第一半導體層的一上表面形成一第一透明導電層以向外暴露該第一半導體層的一部分，且在該第二半導體層的一下表面形成一第二透明導電層以向外暴露該第二半導體層的一部分；以及在該第一透明導電層及該第二透明導電層至少一者上進行一電漿處理程序，其中該電漿處理程序包含移除該第一半導體層的向外暴露的該部分和該第二半導體層的向外暴露的該部分的步驟。
  2. 如請求項1所述的方法，其中形成該第一半導體層的步驟包含在該半導體晶圓的一側表面形成該第一半導體層，以及形成該第二半導體層的步驟包含在該半導體晶圓的該側表面形成該第二半導體層；以及移除該第一半導體層的向外暴露的該部分的該電漿處理程序的步驟包含該第一半導體層的一部分在該半導體晶圓的該側表面形成；以及移除該第二半導體層的向外暴露的該部分的該電漿處理程序的步驟包含該第二半導體層的一部分在該半導體晶圓的該側表面形成。
  3. 如請求項2所述的方法，其中在該半導體晶圓的該側表面形成的該第一半導體層和在該半導體晶圓的該側表面形成的該第二半導體層相互連接；以及在該第一半導體層和該第二半導體層之間的一連接經由該電漿處理程序被切斷。
  4. 如請求項1所述的方法，其中該電漿處理程序包含移除在該第一透明導電層和該第二透明導電層中至少一者的一表面的顆粒的步驟。
  5. 如請求項1所述的方法，其中該第一半導體層的一端和另一端在該電漿處理程序之後分別與該第一透明導電層的一端和另一端相匹配。
  6. 一種製造太陽能電池的方法，該方法包含：在一半導體晶圓的一上表面與一下表面分別形成一第一半導體層和一第二半導體層，該第一半導體層和該第二半導體層在該半導體晶圓的一側表面相互連接；在該第一半導體層的一上表面和該第二半導體層的一下表面分別形成一第一透明導電層和一第二透明導電層以向外暴露該第一半導體層在該半導體晶圓的該側表面的一部分與該第二半導體層在該半導體晶圓的該側表面的一部分；藉由將該第一透明導電層與該第二透明導電層作為一光罩移除在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該外部分與該第二半導體層的向外暴露的該部分暴露部分的步驟，以切斷該第一半導體層和該第二半導體層之間的一電性連接；以及移除在該第一透明導電層和該第二透明導電層中至少一者的一表面的顆粒。
  7. 如請求項6所述的方法，其中移除位在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該部分與該第二半導體層的向外暴露的該部分的步驟和移除顆粒的步驟為同時執行。
  8. 如請求項7所述的方法，其中移除位在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該部分與該第二半導體層的向外暴露的該部分的步驟和移除顆粒的步驟藉由一電漿處理程序同時執行。
  9. 如請求項6所述的方法，其中在移除位在該半導體晶圓的該側表面的該第一半導體層的向外暴露的該部分與該第二半導體層的向外暴露的該部分的步驟之後，該第一半導體層的一端和另一端分別與該第一透明導電層的一端和另一端相匹配。
  10. 一種太陽能電池，包含：一半導體晶圓；一第一半導體層，提供於該半導體晶圓的一上表面上；一第一透明導電層，提供於該第一半導體層的一上表面上；一第二半導體層，提供於該半導體晶圓的一下表面上，該第二半導體層具有與該第一半導體層的極性不同的極性；以及一第二透明導電層，提供於該第二半導體層的一下表面上；其中該第一半導體層的一端和另一端分別與該第一透明導電層的一端和另一端相匹配。
  11. 如請求項10所述的太陽能電池，其中該第二半導體層的一端和另一端分別與該第二透明導電層的一端和另一端相匹配。
  12. 如請求項10所述的太陽能電池，其中該第一半導體層的該端和該另一端不與該半導體晶圓一端和另一端相匹配；該第二半導體層的一端和另一端不與該半導體晶圓該端和該另一端相匹配。
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