TW201816960A - 埋入式乾膜電池模組及其製造方法 - Google Patents
埋入式乾膜電池模組及其製造方法 Download PDFInfo
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- TW201816960A TW201816960A TW106121824A TW106121824A TW201816960A TW 201816960 A TW201816960 A TW 201816960A TW 106121824 A TW106121824 A TW 106121824A TW 106121824 A TW106121824 A TW 106121824A TW 201816960 A TW201816960 A TW 201816960A
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- Prior art keywords
- dielectric layer
- dry film
- film battery
- battery
- layer
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Abstract
一種用以提供於其中與乾膜電池(18)結合的封裝式電子模組(10)之系統與方法係被揭露。封裝式電子模組(10)包括第一介電層(20);附接至或埋入於第一介電層(20)之至少一電子組件(12、14、16);形成於第一介電層(20)上之乾膜電池(18);及機械地且電性地耦接至至少一電子組件(12、14、16)與乾膜電池(18)以形成於其中的電性互連之金屬互連(40)。於MEMS類型感測器(12)、半導體裝置(14)及通訊裝置(16)之形式的電子組件(12、14、16)可被包括於該模組中連同該電池(18)以提供能與其他類似的封裝式電子模組進行通訊之自供電的模組。
Description
本發明之實施例大致關於用於封裝電組件(例如半導體裝置、感測器及通訊裝置)之結構與方法,且更具體言之,關於具有乾膜電池整合於其中以致形成自供電的模組之埋入式封裝結構。
電子封裝是一種用以建構電子電路封裝或模組之方法,於其中一或多個半導體裝置與被動裝置被整合於封裝結構內,該封裝結構對裝置提供電連接及保護,使得例如「多晶片模組(multi-chip module;MCM)」可被提供。封裝結構接著賦能封裝/模組至例如印刷電路板(PCB)或其他類似外部電路之表面的連接。用以封裝半導體裝置與被動裝置的技術典型地開始於藉由黏著劑將一或多個半導體或被動裝置佈置於介電層上,而介電層覆蓋各裝置的主動側。金屬互連接著被電鍍於介電層上以形成直接金屬連接至裝置。互連可透過額外的層壓再分配層被 路由(若希望的話),且輸入/輸出系統被提供以賦能至PCB或外部電路上的封裝之表面安裝。嵌入式化合物可接著被施加在裝置周圍以將該裝置封入其中。
最近,已確認了如上所述之電子封裝/模組可被利用於建立系統(於其中多個封裝的感測器彼此通訊)。這些系統可被稱為「物聯網(Internet of Things)」或IoT系統,其中系統賦能器(enabler)是一種可提供至少三個功能(感測能力、數位與訊號處理能力、及通訊能力)的IC裝置。舉例來說,感測能力可包括在IC裝置內之(多個)區域、(多個)層,其可包括例如微機電系統(MEMS)加速計(單或多軸)、氣體感測器、電或磁場感測器、共振結構、懸臂結構、超音波傳感器(電容的&壓電的)、等等。數位與訊號處理能力可包括在IC裝置內之(多個)區域、(多個)層,其可包括例如微處理器、數位訊號處理器、微控制器、FPGA、及其他數位及/或類比邏輯電路、裝置、及子系統。通訊能力(例如從IoT系統之至少一IC至另一者、或至主控制器/連結節點的通訊)可包括在IC裝置內之(多個)區域、(多個)層,其可包括例如用於無線通訊之RF電路及(多個)天線,其可利用無限通訊協定(例如G4、WiFi或Bluetooth)、I/O緩衝器及機械連結墊/線路及/或用於光學通訊之光學裝置/電晶體、發送器、接收器、編解碼器、DAC、數位或類比過濾器、調變器。
已了解的是,IoT系統之電子封裝(更具體言 之,其中之感測器、處理器/晶粒、及通訊裝置)需要電源來運作。典型地,獨立電池或其他外部電源被利用以提供電源至IoT電子封裝或其他MCM,而電池被安裝至PCB或外部裝置且被接線至封裝/模組以提供其電源。此獨立電池至封裝/模組之連接因此使得達到小形狀因子為非常具挑戰性的且可限制封裝/模組可被利用於其中之環境/應用。
因此,期望可提供一種具有整合於其中之電池的電子封裝或模組,以致提供具有小形狀因子之自供電的模組。更期望在整體封裝增層(build-up)製程內及作為其一部分之此電子封裝或模組以板件格式及低成本來製造。
本發明之實施例針對具有整合於其中之乾膜電池的埋入式封裝結構及其製造方法。
根據本發明之一態樣,封裝式電子模組包括第一介電層;附接至或埋入於第一介電層中之至少一電子組件;形成於第一介電層上之乾膜電池;及機械地且電性地耦接至至少一電子組件與乾膜電池以形成於其中的電性互連之金屬互連。
根據本發明之另一態樣,製造封裝式電子模組之方法包括:提供第一介電層;直接形成乾膜電池於第一介電層上;附接一或多個電子組件至第一介電層;形成 複數個通孔透過第一介電層;及形成金屬互連於透過第一介電層而形成之複數個通孔中,金屬互連形成至一或多個電子組件與至乾膜電池之電性互連。
仍根據本發明之另一態樣,封裝式電子模組包括具有第一表面與第二表面之介電層且複數個電子組件附接於介電層之第一表面,該複數個電子組件包括MEMS類型感測器及通訊晶片組(其包括半導體裝置及通訊裝置)。封裝式電子模組亦包括附接至介電層之第一表面的乾膜電池及透過介電層形成於複數個通孔內及形成至外面在介電層之第二表面上之金屬互連,該等金屬互連被機械地及電性地耦接至MEMS類型感測器通訊晶片組。封裝式電子模組更包括施加至介電層之第一表面上及MEMS類型感測器通訊晶片組上的電性絕緣基板,以致埋入MEMS類型感測器通訊晶片組於其中。
這些與其他優點及特徵將從本發明之較佳實施例的以下詳細說明配合所附圖式而被更輕易了解。
10‧‧‧封裝模組
12‧‧‧電子組件
14‧‧‧電子組件
16‧‧‧電子組件
18‧‧‧乾膜電池
20‧‧‧介電層
22‧‧‧陽極電極
24‧‧‧乾膜電解質結構
26‧‧‧陰極電極
28‧‧‧鋰之基底層
30‧‧‧LiPON
32‧‧‧LiCoO2
34‧‧‧黏著劑材料
36‧‧‧電性絕緣基板
37‧‧‧外部黏著層
38‧‧‧通孔
40‧‧‧金屬互連
42‧‧‧介電層
43‧‧‧介電層之堆疊
44‧‧‧黏著劑
46‧‧‧板件
50‧‧‧封裝模組
52‧‧‧乾膜電池
54‧‧‧鋰
56‧‧‧LiPON
58‧‧‧LiCoO2
60‧‧‧陽極電極
62‧‧‧陰極電極
64‧‧‧介電基板層
66‧‧‧介電基板層
68‧‧‧組件
70‧‧‧組件
76‧‧‧I/O連接
78‧‧‧金屬互連
80‧‧‧通孔
86‧‧‧鈍化層
88‧‧‧金屬互連
90‧‧‧金屬互連
92‧‧‧通孔
該等圖式顯示目前考量用以實現本發明之實施例。
在該等圖式中:第1A與1B圖為根據本發明之實施例的封裝模組之概要剖面側視圖。
第2-10圖為根據本發明之實施例在製造/增層 製程之各種階段期間的封裝模組之概要剖面側視圖。
第11圖為根據本發明之另一實施例的封裝模組之概要剖面側視圖。
本發明之實施例提供具有電池形成於其中之埋入式乾膜電池模組,其係經由乾膜噴濺及蒸發技術直接形成於介電基板上。
參照第1A與1B圖,封裝式電子模組10係根據本發明之實施例顯示。封裝模組10包括數個電子組件12、14、16於其中以及乾膜電池18。於所說明之實施例中,組件12、14、16為以微機電系統(MEMS)類型感測器12及半導體裝置14及通訊裝置16(其共同形成用以進行無線資料通訊之裝置)的形式。MEMS感測器12可為任何類型的感測裝置(其適合用於封裝模組10之有意使用),此感測器的範例為MEMS加速計、氣體感測器、或電/磁場感測器。半導體裝置14可為以例如晶粒、晶片、特定應用積體電路(ASIC)、或處理器的形式,且通訊裝置16可為以RF電路及(多個)天線的形式,其可利用標準通訊定,例如G4、WiFi或Bluetooth。因此,於一實施例中,半導體裝置14及通訊裝置16可共同形成Bluetooth無線晶片組。雖然特定配置的電子組件12、14、16係顯示於第1圖,已了解的是,額外的半導體裝置或電子組件可被包括於封裝模組10中,且因此本發明之實施例不限制於第1A與1B圖中 所顯示的特定實施例。
如第1A與1B圖所示,乾膜電池18及電子組件12、14、16中之各者被形成/提供於封裝模組10之介電層20上。根據例示實施例,介電層20係以層(lamination)或膜的形式被提供且係以選自可在使用與框架處理期間對通孔提供機械與溫度穩定性的材料形成,以及對於通孔形成與電流過度(power overly;POL)處理提供適合的介電性質與電壓崩潰強度及處理能力。因此,根據本發明之實施例,介電層20可由複數個介電材料中之一者形成,例如Kapton®、Ultem®、聚四氟乙烯(polytetrafluoroethylene;PTFE)、Upilex®、聚碸材料(例如,Udel®、Radel®)、或另一聚合物膜,例如液晶聚合物(liquid crystal polymer;LCP)或聚醯亞胺材料。
於第1A與1B圖中可見,乾膜電池18被直接設置於介電層20上。於一例示實施例中,乾膜電池18係經由以下所述的製造過程被直接形成於介電層20上;然而,已了解的是,本發明之其他實施例可針對於其中已被製成的電池18被佈置於介電層20上之封裝。於乾膜電池18被直接形成於介電層20上之實施例中,電池18之陽極電極22首先經由噴濺與蒸發技術被沈積及界定於介電層20上,接著乾膜電解質結構24被沈積於陽極22上,且接著陰極電極26被沈積與界定於乾膜電解質結構24上方。於一例示實施例中,電池18係為薄膜鋰微電池的形成,且因此電池18的製造包括以下步驟:沈積/界定鋰陽極電極22於介電層20 上、施加鋰之基底層28於陽極22上、沈積LiPON 30與LiCoO2 32之乾膜電解質於鋰之基底層28上、及沈積/界定鋰陰極電極26於乾膜電解質24之堆疊層上方。然而,已了解的是,電池18可為鋰電池以外之另一適合的類型之乾膜電池,且因此本發明之實施例並不僅限於薄膜鋰電池。
20]為了固定電子組件12、14、16於介電層20上,黏著劑材料34(亦即,「附接黏著劑(attachmentadhesive)」)被包括於介電層20上,其係將電子組件12、14、16面朝下而附接至黏著劑34上。黏著劑材料34亦被施加於乾膜電池18上方以作為對於電池之保護性塗層或包封物。電性絕緣基板36亦被提供於封裝模組10內且被形成以致圍繞電子組件12、14、16及電池18,以致對其提供保護及對封裝模組10提供額外的結構完整性。於第1A圖中所顯示的實施例中,電性絕緣基板36係以介電「包覆成型(overmold)」包封物之形式提供,例如聚合包封物或環氧樹脂。然而,已了解的是,電性絕緣基板36可(作為替代)用其他形式來提供,例如被提供為被施加及形成於組件12、14、16及電池18周圍的多層介電構造(亦即,介電層之堆疊),如第1B圖所示,可確認的是,此多層介電構造亦將允許其他路由層以此等層來形成且提供電路徑至封裝模組10之其他/背側。於任一實施例中,電性絕緣基板36被形成以對於封裝模組10展現平面或平坦背表面,且外部黏著層37可被施加至電性絕緣基板36之背側上以對於封裝模組10賦能「即撕即貼(peel and stick)」應用於封裝 模組10將連同其被利用之期望的裝置上。
如第1A與1B圖所示,複數個通孔38與經圖案化的金屬互連40係被形成於介電層20內及上。通孔38係透過介電層20被形成下至電子組件12、14、16之前/主動表面與至乾膜電池18之陽極22與陰極26(亦即,終端)。金屬互連40係隨後形成於封裝模組10中以提供電連接於其中,而互連40被形成於通孔38內及形成至外面介電層20之表面上。根據本發明之實施例,金屬互連40包含「POL互連」,其被形成為強健的電鍍銅互連(其形成直接電連接於裝置12中)。於一些實施例中,依照裝置上之金屬化,經噴濺的黏著層(鈦、鉻等)係連同經噴濺的銅種層(銅可被電鍍於其上)被提供。於第1圖中所示,金屬互連40被圖案化及蝕刻至期望的形狀,例如提供電連接至封裝模組10。
根據一實施例,額外的介電層42被施加至介電層20(藉由黏著層44)。因此,一旦形成金屬互連40於介電層內/上,則額外的介電層42被加至介電層20。接著,通孔38隨後被鑽孔於增加的介電層42中,而金屬互連40被電鍍於通孔38中且被圖案化於層42之外部表面上。介電層20、42作用為再分配層,其作用為在封裝模組10內路由電連接。雖然沒有在第1A與1B圖中顯示,已了解的是,於一些實施例中,封裝I/O可被提供於最外面的再分配層(亦即,層42),例如以球狀柵格陣列(BGA)的形式,以提供第二位準連接至印刷電路板(PCB)或其他外 部裝置。
於第1B圖之實施例中,已了解的是,通孔38與金屬互連40可被形成於介電層之堆疊43內/上,其以如上所述對於通孔38與於介電層20、42中形成之互連40相同方式來形成電性絕緣基板36。如前所述,互連40可提供電路徑至封裝模組10之背側。
根據一實施例,天線結構(未圖示)可被形成及路由於再分配層20、42中(及/或於介電層43中)。天線結構可提供來自被包括於封裝模組10中的通訊裝置16之加強的訊號接收及傳送。
封裝模組10因此被提供具有電池18被整合於其中,其係連同其他電子組件12、14、16被形成於共同基板上(亦即,介電層20)。封裝模組10因此為具有極低耗損及薄剖面之自供電的模組之形式。封裝模組10可被設計以提供數個功能或感測應用,例如對於IoT應用,其中模組包括整合式無線/藍芽組件及用於發送即時資料/分析之天線。
現參照第2-10圖,根據本發明之實施例用於製造封裝模組10的技術之製程步驟的詳細視圖係被提供。第2-10圖中所說明的技術係對於製造封裝模組10(如第1圖所示)(亦即,包括感測器12、無線晶片組14、16、及乾膜電池18)被顯示及描述,然而,已了解的是,所描述的處理可應用以製造埋入各種組態的感測器、半導體裝置、及/或通訊裝置之封裝模組。
參照第2圖,封裝模組10之增層製程開始於將介電層20佈置及附接至框架結構46上,而框架結構46以捲至捲(roll-to-roll)(例如,帶有軌或禁碰區之「35mm」條格式)或框架格式,以該領域中所已知的方式而被連結至介電層的任一側。介電層20為層或膜之形式且被佈置於框架結構46上以在封裝模組10之增層製程期間提供穩定性。根據本發明之實施例,介電層20可由複數個介電材料中之一者形成,例如Kapton®、Ultem®、聚四氟乙烯(polytetrafluoroethylene;PTFE)、Upilex®、聚碸材料(例如,Udel®、Radel®)、或另一聚合物膜,例如液晶聚合物(liquid crystal polymer;LCP)或聚醯亞胺材料。
如第3圖所示,一旦將介電層20固定至框架結構46,乾膜電池18被佈置於介電層20上。於一例示實施例中,乾膜電池18係被直接形成/製造於介電層20上;然而,已了解的是,本發明之其他實施例可針對於其中已被製成的電池18被佈置於介電層20上之封裝。在製造電池18時,於電池18為薄膜鋰微電池之形式的實施例中,鋰陽極電極22最初被沈積至介電層20上,例如經由噴濺施加。一旦將陽極22沈積至介電層20上,各種電池層之增層施加接著被施加至陽極22上,增層施加包括鋰28之基底層的沈積(例如,噴濺)、LiPON 30之乾膜電解質的沈積、及LiCoO2 32之乾膜電解質的沈積。一旦沈積此描述的電池層28、30、32之堆疊,鋰陰極電極26接著被沈積及界定於乾膜電解質之堆疊層之上方,而陰極26亦延伸下至堆疊層 28、30、32之側及至介電層20上。已了解的是,以上所述電池18之製造可能沒有構成完整製造製程且可能需要額外的製程步驟,如所屬技術領域中具有通常知識者所了解者。
在將電池18形成於介電層20上後,且如第4圖所示,黏著劑材料34被施加至介電層20上,於乾膜電池18被形成於其上之相同側。於一實施例中,黏著劑材料34亦被施加於乾膜電池18上方以作為對於電池18之保護層或包封物,雖然已了解的是,黏著劑材料34不需要被施加於保護上方(亦即,對於電池保護可僅依賴電性絕緣基板36)。一旦施加黏著劑34,電子組件(例如MEMS類型感測器12、半導體裝置14及通訊裝置16)接著被面朝下(亦即,主動側向下)佈置及附接至黏著劑34上以將組件固定至介電層20上,如第5圖所示。接著執行固化步驟以將黏著劑34固化及將電子組件12、14、16固定至黏著劑34及至介電層20。
在增層製程的下個步驟中,如第6圖所示,電性絕緣基板36被施加以致圍繞電子組件12、14、16及電池18。於第6圖中所顯示的實施例中,電性絕緣基板36係被施加為介電「包覆成型(overmold)」包封物,例如聚合包封物或環氧樹脂。然而,如前所述,電性絕緣基板36可(作為替代)被提供/形成為介電層之堆疊。於任一實施例中,電性絕緣基板36被形成以對於封裝模組10展現平面或平坦背表面,其賦能模組至期望的裝置之安裝,其將於 下文更詳細說明。
現參照第7圖,一旦包覆成型及包封電子組件12、14、16及電池18,複數個通孔38被形成穿過介電層20(及黏著層34)至電池18之終端22、26及至電子組件12、14、16之I/O墊。通孔38為被形成下至電池18及電子組件12、14、16之終端與I/O的盲通孔,用以形成至其之電連接,例如藉由使用校正鑽孔來查看組件/電池。根據本發明之實施例,通孔38可藉由雷射燒蝕或雷射鑽孔製程、電漿蝕刻、光定義(photo-definition)、或機械鑽孔製程而被形成。雖然通孔38穿過介電層20之形成係在附接電子組件12、14、16及形成乾膜電池18於介電層20上之後被執行如第7圖所顯示,已了解的是,通孔38的形成可在佈置組件12、14、16及形成電池18於介電層20上(亦即,至黏著層34上)之前被執行。亦即,依照通孔尺寸所造成的限制,通孔38可在附接電子組件12、14、16及形成乾膜電池18於介電層20上之前首先被形成在介電層20中,而通孔38被形成於對應至被形成於電子組件12、14、16及電池18上之複數個終端及/或連接墊的位置。再者,如有需要,預先及事後鑽孔的通孔之組合可被利用。
一旦通孔38已被形成下至電池18之終端22、26及至電子組件12、14、16之I/O墊,且一旦完成通孔38之清潔(例如透過反應性離子蝕刻(reactive ion etching;RIE)除灰製程),金屬互連40接著被形成於封裝模組10中,如第8圖所示。根據一實施例,金屬互連40 可透過噴濺與電鍍施加之組合來形成,雖然已了解的是,金屬沈積之其他方法(例如,無電或電解電鍍)亦可被使用。舉例來說,鈦、TiW或鈀黏著層及銅種層可首先藉由噴濺或無電電鍍製程而被施加於通孔38中,緊接著藉由電鍍製程填充通孔38及增加銅的厚度(亦即,「電鍍上(plating up)」)至期望的位準。於一實施例中,圖案化及蝕刻接著隨後被執行於所施加的銅上以形成具有期望形狀的互連40。雖然連續銅層的施加及隨後連續銅層的圖案化及蝕刻係對於互連40於此描述,已了解的是,取而代之地,經由半加成電鍍製程的互連40之圖案化及電鍍可被利用以形成互連40。
根據一實施例,且如第9圖所示,額外的路由層可在增層製程的下個步驟被施加至封裝模組10。亦即,一旦形成金屬互連40於封裝模組10中,一或多個額外的介電層(例如第9圖中之介電層42)可被加至封裝模組10,而黏著劑44被使用以將介電層42附接至介電層20。如第9圖所示,已了解的是,各額外的介電層42可在被加至先前的層之前被安裝於框架上。於一實施例中,介電層42可由與介電層20相同的材料製成,且因此層可為複數個介電材料中之一者,例如Kapton®、Ultem®、聚四氟乙烯(polytetrafluoroethylene;PTFE)、Upilex®、聚碸材料(例如,Udel®、Radel®)、或另一聚合物膜,例如液晶聚合物(liquid crystal polymer;LCP)或聚醯亞胺材料。通孔38與金屬互連40接著隨後藉由以上所述之孔洞形成與 金屬互連電鍍/圖案化製程被形成於被加入的介電層42內/上。此外,於電性絕緣基板36被提供/形成為介電層之堆疊(亦即,第1B圖中之介電層43)之實施例中,已了解的是,通孔38及金屬互連40可藉由以上所述之孔洞形成與金屬互連電鍍/圖案化製程而形成於被加入的介電層內/上。
一旦加入任何期望的額外的介電層42(及/或層43)及隨後形成通孔38與金屬互連40於介電層42內/上,封裝模組10被從處理框架或板件46移除,且模組製程的最終步驟可藉由施加外部黏著層37至電性絕緣基板36之背側上而被執行,如第10圖所示。黏著層37的加入賦能封裝模組10被使用於「即撕即貼」應用中,於其中,封裝模組10可被施加至封裝模組10將被利用之期望的裝置上。雖然第10圖顯示施加黏著層37至封裝模組10的背側上,但已了解的是,黏著層可額外地/替代地被施加至封裝模組10之側表面或封裝模組10之前表面上。
雖然第1A與1B圖及第2-10圖顯示及描述於其中乾膜電池18被形成/提供於所選擇的位置於介電基板20上及其所支撐之封裝模組10,已了解的是,封裝模組之替代實施例可被形成於於其中乾膜電池被形成為模組之整體基板的一部分。現參照第11圖,根據另一實施例之封裝模組50被顯示。於第11圖之實施例中可見,乾膜電池52被提供於封裝模組50中,其形成封裝基板的一部分。更具體言之,具有類似之前所述的堆疊構造(例如,鋰54、LiPON 56及LiCoO2 58之堆疊層,連同鋰陽極及陰極電極60、 62)之乾膜電池52係被形成於一對介電基板層64、66之間,其對於封裝模組50提供支撐、保護、及連接再分配,而乾膜電池52被形成以致填充該對介電基板層64、66之間的整個面積/體積及覆蓋各介電基板層64、66之表面。雖然鋰乾電池52係顯示於第11圖中,已了解的是,根據本發明額外的實施例,其他薄膜電池材料及層可被代替於第11圖中所示之特定電池材料/層。
關於介電基板層64、66,介電層中之各者係以選自可在使用與框架處理期間對通孔提供機械與溫度穩定性的材料形成,以及對於通孔形成與電流過度(power overly;POL)處理提供適合的介電性質與電壓崩潰強度及處理能力。因此,根據本發明之實施例,介電基板層64、66可由複數個介電材料中之一者形成,例如Kapton®、Ultem®、聚四氟乙烯(polytetrafluoroethylene;PTFE)、Upilex®、聚碸材料(例如,Udel®、Radel®)、聚酯樹脂、或另一聚合物膜,例如液晶聚合物(liquid crystal polymer;LCP)或聚醯亞胺材料。
介電基板層64、66可包括安裝於其上之一或多個電子組件,例如兩個組件68、70於層66上,如第11圖所示。電子組件68、70(根據一實施例可為MEMS類型感測器、半導體裝置及/或通訊裝置之形式)可連同乾膜電池52形成自供電的封裝式電子模組50,其提供數個功能或感測應用(例如,IoT應用)。
如第11圖所示,電子組件68、70中之各者電 連接至形成於介電基板層64之外部表面上的I/O連接76。至於電子組件68、70,組件68、70及I/O 76之間的此類電連接係藉由被形成於通孔80(其延伸穿過乾膜電池52及穿過介電基板層64)內之金屬互連78而被提供。關於穿過乾膜電池52及介電基板層64而形成的通孔80及金屬互連78,已了解的是,此通孔80必須被形成以將其中之金屬互連78對電池52電隔離/絕緣。因此,通孔包括沿其表面形成的鈍化層86,而金屬互連78在鈍化層86內填充於通孔80中使得金屬互連78對電池52電隔離/絕緣。雖然未顯示於第11圖中,已了解的是,於一實施例中,通孔及對應的互連亦可被形成下至電池52以提供對電池充電,使得封裝模組50可為自支持供電的模組或感測器之形式。
如亦於第11圖中所示,額外的金屬互連88、90被形成以電耦接電子組件68、70至乾膜電池52之陽極與陰極電極60、62,使得電池52可提供電源至這些組件68、70(亦即,組件為耗電裝置,例如半導體裝置)。對於電耦接電子組件68、70至陽極60之金屬互連88,此互連88延伸穿過形成於乾膜電池52中/透過乾膜電池52之通孔92(亦即,穿過陰極62及層54、56、58)。可再次了解的是,通孔92必須被形成以將其中之金屬互連88對電池52電隔離/絕緣,且因此通孔92亦包括沿其表面的鈍化層86,而金屬互連88在鈍化層86內填充於通孔92中使得金屬互連88對陰極62及層54、56、58電隔離/絕緣。
封裝模組50因此被提供具有電池52整合於其 中,其被形成為封裝模組50之整體基板的一部分。封裝模組50因此為具有極低耗損及薄剖面之自供電的模組之形式。封裝模組50可被設計以提供數個功能或感測應用,例如對於IoT應用,模組包括整合式無線/藍芽組件及用於發送即時資料/分析之天線。整合式電池18提供基板的功能且可「填充(fill in)」封裝中之所有的非主動空間,其可整合電子組件於電池18之兩側。
有益地,本發明之實施例因此提供一種於其中與乾膜電池整合的封裝式電子模組。藉由整合電池至封裝模組中,自供電的模組被提供,其消除連接至外部地安裝的電池之需求。電池之整合因此降低與操作模組相關聯的電源損失且提供具有小形狀因子之薄型模組。自供電的封裝式電子模組可以板件格式被製造於整體封裝增層製程內及作為其一部份,以致降低電池及相關聯的模組之製造成本。自供電的封裝式電子模組可提供對於IoT應用之數個功能或應用,包括整合無線/Bluetooth組件及用於發送即時資料/分析之天線的模組。高溫應用、RF高頻操作、彈性/共形(conformal)結構、及「即撕即貼」應用更為由自供電的封裝式電子模組所提供之額外的益處。其他預想的益處包括整合能源收穫裝置至封裝式電子模組內的本發明之實施例以提供乾膜電池的再充電以致提供自支持供電的感測器,例如可能有用於沒有服務的或遠端的區域。
因此,根據本發明之一實施例,封裝式電子模組包括第一介電層;附接至或埋入於第一介電層中之至 少一電子組件;形成於第一介電層上之乾膜電池;及機械地且電性地耦接至至少一電子組件與乾膜電池以形成於其中的電性互連之金屬互連。
根據本發明之另一實施例,製造封裝式電子模組之方法包括:提供第一介電層;直接形成乾膜電池於第一介電層上;附接一或多個電子組件至第一介電層;形成複數個通孔透過第一介電層;及形成金屬互連於透過第一介電層而形成之複數個通孔中,金屬互連形成至一或多個電子組件與至乾膜電池之電性互連。
仍根據本發明之另一實施例,封裝式電子模組包括具有第一表面與第二表面之介電層且複數個電子組件附接於介電層之第一表面,該複數個電子組件包括MEMS類型感測器及通訊晶片組(其包括半導體裝置及通訊裝置)。封裝式電子模組亦包括附接至介電層之第一表面的乾膜電池及透過介電層形成於複數個通孔內及形成至外面在介電層之第二表面上之金屬互連,該等金屬互連被機械地及電性地耦接至MEMS類型感測器及通訊晶片組。封裝式電子模組更包括施加至介電層之第一表面上及MEMS類型感測器通訊晶片組上的電性絕緣基板,以致埋入MEMS類型感測器通訊晶片組於其中。
雖然本發明已配合僅有限數量的實施例來詳細描述,但應了解的是,本發明不限制於所揭露的實施例。反而,本發明可被修改以整合未於之前描述但同樣落於本發明之精神與範疇內的任何數量之變化、替代、取代 或等效配置。此外,雖然本發明之各種實施例已被描述,但應了解的是,本發明之態樣可僅包括所描述的實施例中之一些。因此,本發明並不被之前描述所限制,但僅由後附申請專利範圍的範疇所限制。
Claims (15)
- 一種封裝式電子模組(10),包含:第一介電層(20);附接至或埋入於該第一介電層(20)中之至少一電子組件(12、14、16);設置於該第一介電層(20)上之乾膜電池(18);及機械地且電性地耦接至該至少一電子組件(12、14、16)與該乾膜電池(18)以形成至其中的電性互連之金屬互連(40)。
- 如申請專利範圍第1項之封裝式電子模組(10),更包含被施加至該第一介電層(20)上之黏著層(34),使得該至少一電子組件(12、14、16)經由該黏著層(34)而被附接至該第一介電層(20)。
- 如申請專利範圍第2項之封裝式電子模組(10),其中該黏著層(34)被施加至該乾膜電池(18)上方以實質地圍繞該乾膜電池(18)及在其附近提供保護性塗層。
- 如申請專利範圍第1項之封裝式電子模組(10),更包含形成於該第一介電層(20)之第一表面上的該至少一電子組件(12、14、16)與該乾膜電池(18)上方之電性絕緣基板(36)。
- 如申請專利範圍第4項之封裝式電子模組(10),其中該電性絕緣基板(36)包含介電質包覆成型包封物與介電層之堆疊之其中一者。
- 如申請專利範圍第5項之封裝式電子模組(10),更包含施加至該電性絕緣基板(36)之於該第一介電層(20)對面的背表面上的外部黏著層(37),該電性絕緣基板(36)之背表面包含該外部黏著層(37)被施加至其上的平面或平坦表面。
- 如申請專利範圍第1項之封裝式電子模組(10),其中該乾膜電池(18)包含:直接形成至該第一介電層(20)上之陽極(22);形成至該陽極(22)上之電池材料層之堆疊(24);及形成於該電池材料層之堆疊(24)上方的陰極(26);其中金屬互連(40)形成至該陽極(22)與該陰極(26)之電性互連。
- 如申請專利範圍第1項之封裝式電子模組(10),更包含透過該第一介電層(20)而形成至該至少一電子組件(12、14、16)與該乾膜電池(18)之複數個通孔 (38),該等金屬互連(40)形成於該複數個通孔(38)中及形成至外面該第一介電層(20)之表面上。
- 如申請專利範圍第1項之封裝式電子模組(10),其中該至少一電子組件(12、14、16)包含複數個電子組件,該複數個電子組件包括:微機電系統(MEMS)類型感測器(12);半導體裝置(14);及通訊裝置(16);其中,該MEMS類型感測器(12)、半導體裝置(14)、及通訊裝置(16)共同形成用以進行參數感測及無線資料通訊之裝置。
- 如申請專利範圍第1項之封裝式電子模組(10),更包含形成於該第一介電層(20)中或上之天線結構。
- 如申請專利範圍第1項之封裝式電子模組(10),更包含第二介電層(64),其被設置而使得該乾膜電池(52)被夾置於該第一介電層(66)與該第二介電層(64)之間,該乾膜電池(52)填充該第一與該第二介電層(66、64)之間的整個體積;其中複數個通孔(38)被形成透過該乾膜電池(18)與該第二介電層(42);及其中一部分的該等金屬互連(78)被形成於延伸透過 該乾膜電池(18)與該第二介電層(64)之該複數個通孔(80)中,其具有被塗敷於該複數個通孔(80)中以使此部份的該等金屬互連(78)與該乾膜電池(52)電性絕緣之鈍化層(86)。
- 一種製造封裝式電子模組(10)之方法,包含:提供第一介電層(20);直接提供乾膜電池(18)於該第一介電層(20)上;附接一或多個電子組件(12、14、16)至該第一介電層(20);形成複數個通孔(38)透過該第一介電層(20);及形成金屬互連(40)於透過該第一介電層(20)而形成之該複數個通孔(38)中,該等金屬互連(40)形成至該一或多個電子組件(12、14、16)與至該乾膜電池(18)之電性互連。
- 如申請專利範圍第12項之方法,更包含:埋入該一或多個電子組件(12、14、16)與該乾膜電池(18)於電性絕緣基板(36)中,所述該一或多個電子組件(12、14、16)與該乾膜電池(18)之埋入包含以下之其中一者:以介電質包封物材料包覆成型該一或多個電子組件(12、14、16)與該乾膜電池(18);或在該一或多個電子組件(12、14、16)與該乾膜電池 (18)上方施加介電層之堆疊;及施加外部黏著層(37)至該電性絕緣基板(36)上,該外部黏著層(37)被施加至該電性絕緣基板(36)之平坦背表面以提供該封裝式電子模組(10)之即撕即貼應用至外部裝置。
- 如申請專利範圍第12項之方法,其中提供該乾膜電池(18)包含直接形成該乾膜電池(18)於該第一介電層(20)上,其中形成該乾膜電池(18)更包含:直接沈積陽極(22)電極至該第一介電層(20)上;施加形成至該陽極(22)上之電池材料層之堆疊(24);及沈積陰極(26)在該電池材料層之堆疊(24)上方及往下至該第一介電層(20)上。
- 如申請專利範圍第12項之方法,其中附接該一或多個電子組件(12、14、16)包含附接複數個電子組件(12、14、16),該複數個電子組件(12、14、16)包括:微機電系統(MEMS)類型感測器(12);半導體裝置(14);及通訊裝置(16);其中,該MEMS類型感測器(12)、半導體裝置(14)、及通訊裝置(16)共同形成經組構以提供參數感測及無線資料通訊之物聯網(IoT)相容裝置。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI701793B (zh) * | 2018-11-30 | 2020-08-11 | 南亞科技股份有限公司 | 電子元件及其製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10044009B2 (en) | 2016-09-08 | 2018-08-07 | Stmicroelectronics (Tours) Sas | Encapsulated microbattery having terminal connected to active layer through a via |
CN110710125B (zh) * | 2017-06-05 | 2022-03-18 | 瑞典爱立信有限公司 | 波束管理系统和方法 |
CN110060983B (zh) * | 2019-05-23 | 2024-06-25 | 盛合晶微半导体(江阴)有限公司 | 天线封装结构及封装方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01124248A (ja) * | 1987-11-09 | 1989-05-17 | Matsushita Electric Ind Co Ltd | 電子部品 |
JPH0364385A (ja) * | 1989-08-02 | 1991-03-19 | Kanzaki Paper Mfg Co Ltd | 再剥離性粘着シート |
US6077106A (en) | 1997-06-05 | 2000-06-20 | Micron Communications, Inc. | Thin profile battery mounting contact for printed circuit boards |
JPH11354690A (ja) * | 1998-06-05 | 1999-12-24 | Mitsubishi Electric Corp | 半導体装置 |
CN1107356C (zh) | 1998-07-08 | 2003-04-30 | 武汉大学 | 塑料薄膜锂离子电池的制造方法 |
JP4129667B2 (ja) | 2000-04-21 | 2008-08-06 | 富士フイルム株式会社 | 電池内蔵型基板 |
CN1284082C (zh) | 2001-01-19 | 2006-11-08 | 株式会社日立制作所 | 电子电路装置 |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
WO2004107263A1 (ja) * | 2003-05-30 | 2004-12-09 | Renesas Technology Corp. | 半導体装置およびその製造方法 |
US6986199B2 (en) * | 2003-06-11 | 2006-01-17 | The United States Of America As Represented By The Secretary Of The Navy | Laser-based technique for producing and embedding electrochemical cells and electronic components directly into circuit board materials |
TWI266445B (en) * | 2004-05-19 | 2006-11-11 | Antig Tech Co Ltd | Battery with embedded electronic circuit |
US8766435B2 (en) | 2004-06-30 | 2014-07-01 | Stmicroelectronics, Inc. | Integrated circuit package including embedded thin-film battery |
WO2007131227A2 (en) * | 2006-05-05 | 2007-11-15 | Advanced Cerametrics, Inc. | Self-powered portable electronic device |
JP2012503301A (ja) | 2008-03-21 | 2012-02-02 | シー.フジェルスタッド ジョセフ | 回路アセンブリ及びその製造方法 |
US8338936B2 (en) * | 2008-07-24 | 2012-12-25 | Infineon Technologies Ag | Semiconductor device and manufacturing method |
EP2329702A1 (en) * | 2008-09-26 | 2011-06-08 | Parker-Hannifin Corporation | Thermally conductive gel packs |
IT1392321B1 (it) | 2008-12-15 | 2012-02-24 | St Microelectronics Srl | Sistema sensore/attuatore interamente in materiale organico |
US7843056B2 (en) * | 2009-02-20 | 2010-11-30 | National Semiconductor Corporation | Integrated circuit micro-module |
US8187920B2 (en) * | 2009-02-20 | 2012-05-29 | Texas Instruments Incorporated | Integrated circuit micro-module |
TWI423414B (zh) * | 2009-02-20 | 2014-01-11 | Nat Semiconductor Corp | 積體電路微模組 |
JP5492998B2 (ja) | 2009-09-01 | 2014-05-14 | インフィニット パワー ソリューションズ, インコーポレイテッド | 薄膜バッテリを組み込んだプリント回路基板 |
EP2362421A1 (en) | 2010-02-26 | 2011-08-31 | STMicroelectronics S.r.l. | Tailorable flexible sheet of monolithically fabricated array of separable cells each comprising a wholly organic, integrated circuit adapted to perform a specific function |
US9224664B2 (en) * | 2012-06-06 | 2015-12-29 | The Charles Stark Draper Laboratory, Inc. | Bio-implantable hermetic integrated ultra high density device |
JP2014086330A (ja) | 2012-10-25 | 2014-05-12 | Fujitsu Ltd | 小型電源モジュール及び半導体モジュール |
US9496211B2 (en) | 2012-11-21 | 2016-11-15 | Intel Corporation | Logic die and other components embedded in build-up layers |
JP2014116368A (ja) | 2012-12-06 | 2014-06-26 | Panasonic Corp | 電子部品モジュールおよびその製造方法 |
JP6144058B2 (ja) * | 2013-01-31 | 2017-06-07 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
WO2014169292A2 (en) * | 2013-04-13 | 2014-10-16 | Solexel, Inc. | Solar photovoltaic module power control and status monitoring system utilizing laminate-embedded remote access module switch |
US9209151B2 (en) * | 2013-09-26 | 2015-12-08 | General Electric Company | Embedded semiconductor device package and method of manufacturing thereof |
US9847326B2 (en) * | 2013-09-26 | 2017-12-19 | Infineon Technologies Ag | Electronic structure, a battery structure, and a method for manufacturing an electronic structure |
JP6386746B2 (ja) | 2014-02-26 | 2018-09-05 | 株式会社ジェイデバイス | 半導体装置 |
US9806051B2 (en) | 2014-03-04 | 2017-10-31 | General Electric Company | Ultra-thin embedded semiconductor device package and method of manufacturing thereof |
KR101785306B1 (ko) | 2014-12-09 | 2017-10-17 | 인텔 코포레이션 | 몰드 화합물 내의 3차원 구조체 |
FR3039005A1 (fr) * | 2015-07-13 | 2017-01-20 | St Microelectronics Tours Sas | Batterie en couches minces autosupportee et procede de fabrication d'une telle batterie |
US10014710B2 (en) * | 2015-12-09 | 2018-07-03 | Intel Corporation | Foldable fabric-based packaging solution |
US10044009B2 (en) * | 2016-09-08 | 2018-08-07 | Stmicroelectronics (Tours) Sas | Encapsulated microbattery having terminal connected to active layer through a via |
-
2016
- 2016-07-13 US US15/209,244 patent/US10660208B2/en active Active
-
2017
- 2017-06-07 EP EP17174808.0A patent/EP3270443A1/en not_active Withdrawn
- 2017-06-27 JP JP2017124715A patent/JP7109139B2/ja active Active
- 2017-06-29 TW TW106121824A patent/TWI720218B/zh active
- 2017-07-13 CN CN201710570572.7A patent/CN107622988A/zh active Pending
- 2017-07-13 KR KR1020170089208A patent/KR102353065B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI701793B (zh) * | 2018-11-30 | 2020-08-11 | 南亞科技股份有限公司 | 電子元件及其製造方法 |
Also Published As
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CN107622988A (zh) | 2018-01-23 |
JP7109139B2 (ja) | 2022-07-29 |
EP3270443A1 (en) | 2018-01-17 |
JP2018011052A (ja) | 2018-01-18 |
US20180020548A1 (en) | 2018-01-18 |
US10660208B2 (en) | 2020-05-19 |
TWI720218B (zh) | 2021-03-01 |
KR20180007701A (ko) | 2018-01-23 |
KR102353065B1 (ko) | 2022-01-19 |
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