TW201811714A - 半導體製造裝置用零件之製造方法、及半導體製造裝置用零件 - Google Patents
半導體製造裝置用零件之製造方法、及半導體製造裝置用零件 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000919 ceramic Substances 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000007767 bonding agent Substances 0.000 claims description 33
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 24
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 18
- 229910052693 Europium Inorganic materials 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000005304 joining Methods 0.000 abstract description 32
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 230000007423 decrease Effects 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 abstract 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 31
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 31
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 24
- 238000012360 testing method Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本發明之課題在於降低接合溫度並同時抑制第一陶瓷構件與第二陶瓷構件之接合強度的降低。
本發明之解決手段係提供一種半導體製造裝置用零件的製造方法,其包含以下步驟:準備第一陶瓷構件的步驟,該第一陶瓷構件係藉由以AlN為主成分之材料而形成;準備第二陶瓷構件的步驟,該第二陶瓷構件係藉由以AlN為主成分之材料而形成;以及在使包含Eu2O3與Gd2O3與Al2O3的接合劑夾在第一陶瓷構件與第二陶瓷構件之間的狀態下,進行加熱加壓,藉此接合第一陶瓷構件與第二陶瓷構件的步驟。
Description
本說明書所揭示之技術係關於半導體製造裝置用零件之製造方法。
作為半導體製造裝置用零件,現使用基座(susceptor,加熱裝置)。基座具備例如在內部具有加熱器的板狀之陶瓷製保持構件、配置於保持構件之一面側的圓筒狀之陶瓷製支持構件、以及配置於保持構件與支持構件之間且將保持構件的一面與支持構件的一面加以接合之接合層。與保持構件之一面為相反側之保持面上,配置有晶圓(wafer)。基座係利用對加熱器外加電壓所產生之熱,而將配置於保持面之晶圓進行加熱。
保持構件與支持構件係藉由以熱傳導係數較高之AlN(氮化鋁)為主成分的材料而形成。而且,作為具備此種以AlN為主成分之保持構件以及支持構件之基座的製造方法,已知有在使包含Ca(鈣)之接合劑夾在保持構件與支持構件之間的狀態下進行加熱加壓,藉此接合保持構件與支持構件之方法(例如,參照專利文獻1)。
[專利文獻1]日本特開2004-345952號公報
在上述基座的製造方法中,可利用約1600(℃)之低接合溫度,接合保持構件與支持構件。但是,因使用包含Ca之接合劑,故例如有包含Ca之生成物混入晶圓等中成為異物之虞。於是,已知有使用包含Gd(釓)以取代Ca之接合劑的基座之製造方法,但相較於使用包含Ca之接合劑的情形,其接合溫度較高,故期望有進一步的改良。
此外,此種課題不限於構成基座之保持構件與支持構件的接合,例如對於構成靜電吸盤等保持裝置之陶瓷構件彼此的接合而言亦為共同的課題。又,此種課題不限於保持裝置,例如對於噴灑頭等構成半導體製造裝置用零件之陶瓷構件彼此的接合而言亦為共同的課題。
在本說明書中,揭示可解決上述課題之技術。
本說明書所揭示之技術係例如得以下述的形態實現。
(1)本說明書所揭示之半導體製造裝置用零件的製造方法包含以下步驟:準備第一陶瓷構件的步驟,該第一陶瓷構件係藉由以AlN為主成分之材料而形成; 準備第二陶瓷構件的步驟,該第二陶瓷構件係藉由以AlN為主成分之材料而形成;以及在使包含Eu2O3與Gd2O3與Al2O3之接合劑夾在前述第一陶瓷構件與前述第二陶瓷構件之間的狀態下,進行加熱加壓,藉此接合前述第一陶瓷構件與前述第二陶瓷構件的步驟。本案之發明人,藉由實驗等而發現,當使用包含Eu2O3與Gd2O3與Al2O3之接合劑時,相較於使用包含Gd(釓)之接合劑的以往製造方法,即使在將藉由以AlN(氮化鋁)為主成分之材料所形成之陶瓷構件彼此進行接合時的接合溫度低,亦能以高接合強度進行接合。於是,若根據本半導體製造裝置用零件,可藉由使用包含Eu2O3與Gd2O3與Al2O3之接合劑,而降低接合溫度並同時抑制第一陶瓷構件與第二陶瓷構件之接合強度的降低。
(2)本說明書所揭示之半導體製造裝置用零件係具備藉由以AlN為主成分之材料所形成之第一陶瓷構件、藉由以AlN為主成分之材料所形成之第二陶瓷構件、以及配置於前述第一陶瓷構件與前述第二陶瓷構件之間且接合前述第一陶瓷構件與前述第二陶瓷構件之接合層的半導體製造裝置用零件,前述接合層包含含有Eu與Gd與Al之複合氧化物。若根據本半導體製造裝置用零件,含有Eu(銪)與Gd與Al(鋁)之複合氧化物在較低的接合溫度中具有流動性,藉此可降低接合溫度並同時抑制第一陶瓷構件與第二陶瓷構件之接合強度的降低。
(3)在上述半導體製造裝置用零件中,前述接合層中,前述複合氧化物的含有率可作成為以0.1mol% 以上作為特徵之構成。若根據本半導體製造裝置用零件,即使在低溫時流動性亦高之含有Eu與Gd與Al的複合氧化物之含有率為0.1mol%以上,藉此可更有效果地抑制第一陶瓷構件與第二陶瓷構件之接合強度的降低。
(4)本說明書所揭示之半導體製造裝置用零件係具備藉由以AlN為主成分之材料所形成之第一陶瓷構件、藉由以AlN為主成分之材料所形成之第二陶瓷構件、以及配置於前述第一陶瓷構件與前述第二陶瓷構件之間且接合前述第一陶瓷構件與前述第二陶瓷構件之複數個接合部的半導體製造裝置用零件,前述接合部包含含有Eu與Gd與Al之複合氧化物。若根據本半導體製造裝置用零件,含有Eu與Gd與Al之複合氧化物在較低的接合溫度中具有流動性,藉此可降低接合溫度並同時抑制第一陶瓷構件與第二陶瓷構件之接合強度的降低。
(5)在上記半導體製造裝置用零件中,前述接合部中,前述複合氧化物的含有率可作成為以0.1mol%以上作為特徵之構成。若根據本半導體製造裝置用零件,即使在低溫時流動性亦高之含有Eu與Gd與Al之複合氧化物的含有率為0.1mol%以上,藉此可更有效果地抑制第一陶瓷構件與第二陶瓷構件之接合強度的降低。
此外,本說明書所揭示之技術,能以各種形態實現,例如,能以靜電吸盤、真空吸盤等保持裝置、基座等加熱裝置、噴灑頭(shower head)等半導體製造裝置用零件、其等之製造方法的形態實現。
10‧‧‧保持構件
20‧‧‧支持構件
22‧‧‧貫通孔
30‧‧‧接合層
50‧‧‧加熱器
52‧‧‧通路
54‧‧‧接收電極
56‧‧‧電極端子
60‧‧‧金屬線
62‧‧‧上端部分
100‧‧‧基座
B‧‧‧空洞
S1‧‧‧保持面
S2‧‧‧保持側接合面
S3‧‧‧支持側接合面
S4‧‧‧下側的面
W‧‧‧晶圓
圖1係概略地顯示本實施形態中之基座100的外觀構成之斜視圖。
圖2係概略地顯示本實施形態中之基座100的XZ剖面構成之說明圖。
圖3係顯示本實施形態中之基座100的製造方法之流程圖。
圖4係顯示基座100之性能評價的結果之說明圖。
圖5係示意地顯示實施例之基座100的SEM影像之說明圖。
圖6係示意地顯示比較例1之基座100的SEM影像之說明圖。
A.實施形態:
A-1.基座100之構成: 圖1係概略地顯示本實施形態中之基座100的外觀構成之斜視圖,圖2係概略地顯示本實施形態中之基座100的XZ剖面構成之說明圖。在各圖中,顯示用於特定方向之互相直交的XYZ軸。在本說明書中,為了便於說明而設定成將Z軸正方向稱為上方向且將Z軸負方向稱為下方向者,但實際上亦能以與此種朝向方向不同的朝向方向設置基座100。基座100相當於申請專利範圍中之半導體製造裝置用零件。
基座100係保持著對象物(例如晶圓W)並同時進行加熱至指定之處理溫度的裝置,例如,裝設於半導 體裝置的製造步驟所使用之薄膜形成裝置(例如CVD裝置或濺射裝置)或蝕刻裝置(例如電漿蝕刻裝置)。基座100具備在指定的排列方向(在本實施形態中為上下方向(Z軸方向))並排配置之保持構件10及支持構件20。以保持構件10之下側的面(以下稱為「保持側接合面S2」)及支持構件20之上側的面(以下稱為「支持側接合面S3」)與上述排列方向相對向之方式,配置保持構件10與支持構件20。基座100更具備配置於保持構件10的保持側接合面S2與支持構件20的支持側接合面S3之間的接合層30。保持構件10相當於申請專利範圍中之第一陶瓷構件,支持構件20相當於申請專利範圍中之第二陶瓷構件。
[保持構件10]
保持構件10係例如圓形平面的板狀構件,藉由以AlN(氮化鋁)為主成分之陶瓷而形成。此外,此處所謂之主成分係意指含有比例(重量比例)最多的成分。保持構件10的直徑,例如為100(mm)~500(mm)左右,保持構件10的厚度,例如為3(mm)~10(mm)左右。
在保持構件10的內部中,設置有由線狀的電阻發熱體所構成之加熱器50,該線狀的電阻發熱體係藉由導電性材料(例如,鎢或鉬等)而形成。加熱器50之一對的端部係配置於保持構件10的中央部附近。又,在保持構件10的內部,設置有一對的通路(via)52。各通路52係於上下方向延伸之線狀的導電體,且各通路52的上端連接於加熱器50的各端部,各通路52的下端配置於保持構件10的保持側接合面S2側。又,在保持構件10的保持 側接合面S2的中央部附近,配置有一對的接收電極(receiving electrode)54。各接收電極54連接於各通路52的下端。藉此,加熱器50與各接收電極54電性連接。
[支持構件20]
支持構件20係例如於上下方向延伸之圓筒狀構件,且形成有自支持側接合面S3(上側的面)至下側的面S4為止貫通上下方向之貫通孔22。與保持構件10同樣地,支持構件20係藉由以AlN為主成分之陶瓷而形成。支持構件20的外徑例如為30(mm)~90(mm)左右,內徑例如為10(mm)~60(mm)左右,上下方向的長度例如為100(mm)~300(mm)左右。在支持構件20的貫通孔22內,容納有一對的電極端子56。各電極端子56係於上下方向延伸之棒狀的導電體。藉由焊接而將各電極端子56的上端與各接收電極54接合。若自電源(未圖示)外加電壓至一對的電極端子56,則加熱器50會發熱而藉此溫熱保持構件10,並溫熱保持構件10之上側的面(以下稱為「保持面S1」)所保持之晶圓W。此外,為了盡可能地徹底溫熱保持構件10的保持面S1,故將加熱器50配置成例如於Z方向視角呈略同心圓狀。又,在支持構件20的貫通孔22內,容納有熱電偶之二條金屬線60(圖2中僅圖示一條)。以於上下方向延伸之方式配置各金屬線60,且各金屬線60的上端部分62埋入保持構件10的中央部。藉此,可測定保持構件10內的溫度,並基於此測定結果而實現晶圓W的溫度控制。
[接合層30]
接合層30係圓環狀的薄片層,且接合保持構件10的保持側接合面S2與支持構件20的支持側接合面S3。接合層30係藉由包含含有Eu(銪)與Gd(釓)與Al(鋁)之複合氧化物的材料所形成。具體而言,接合層30係藉由包含(Eu,Gd)3Al5O12與GdAlO3與Al2O3(氧化鋁)之材料所形成。接合層30的外徑例如為30(mm)~90(mm)左右,內徑例如為10(mm)~60(mm)左右,厚度例如為2(μm)~60(μm)左右。
A-2.基座100的製造方法: 接著,說明本實施形態中之基座100的製造方法。圖3係顯示本實施形態中之基座100的製造方法之流程圖。首先,準備保持構件10與支持構件20(S110)。如上所述,保持構件10與支持構件20皆係藉由以AlN為主成分之陶瓷所形成。此外,保持構件10及支持構件20因可藉由周知的製造方法進行製造,故在此省略製造方法的說明。
接著,準備為接合層30的形成材料之糊狀的接合劑(S120)。具體而言,以指定的比例混合Eu2O3(氧化銪)粉末與Gd2O3(三氧化二釓)粉末與Al2O3粉末,再一併混合丙烯酸黏合劑及丁卡必醇,藉此形成糊狀的接合劑。此外,糊狀的接合劑之形成材料的組成比,較佳為例如Eu2O3為20mol%,Gd2O3為20mol%,Al2O3為60mol%。接著,在保持構件10與支持構件20之間,配置所準備之糊狀的接合劑(S130)。具體而言,將保持構件10的保持側接合面S2與支持構件20的支持側接合面S3進行拋光研磨(lap polishing),將各接合面S2、S3的表面粗糙度作成 為1μm以下,將平坦度作成為10μm以下。接下來,在保持構件10的保持側接合面S2與支持構件20的支持側接合面S3之至少一者塗布糊狀的接合劑。接下來,藉由遮罩印刷,將糊狀的接合劑塗布於保持構件10的保持側接合面S2與支持構件20的支持側接合面S3之至少一者並進行脫脂處理。其後,使支持構件20的支持側接合面S3與保持構件10的保持側接合面S2經由糊狀的接合劑而重疊,藉此形成保持構件10與支持構件20之積層體。
接著,將保持構件10與支持構件20之積層體配置於熱壓爐內,在N2(氮)中一邊加壓一邊加熱(S140)。藉此,糊狀的接合劑熔融而形成接合層30,藉由接合層30而接合保持構件10與支持構件20。在此加熱、加壓接合中之壓力,較佳為設定在0.1MPa以上且15MPa以下的範圍內。若加熱、加壓接合中之壓力被設定在0.1MPa以上,則即使在被接合構件(保持構件10或支持構件20)的表面有波紋等的情形中,亦可抑制被接合構件間產生未接合之間隙,且可抑制初期之保持構件10與支持構件20之接合強度(接合層30之接合強度)降低。又,若加熱、加壓接合中之壓力被設定在15MPa以下,則可抑制保持構件10的破裂且可抑制支持構件20產生變形。此外,對接合面S2、S3賦予0.2Kgf/cm2~3Kgf/cm2的壓力。
又,在此加熱、加壓接合中之溫度,較佳為上升至1675(℃)。若加熱、加壓接合中之溫度上升至1675(℃),則在維持1675(℃)的狀態約10(分鐘)後,將熱壓爐內的溫度降低至室溫。在加熱、加壓接合之後,視 需要而進行後處理(外周或上下側的面之研磨、端子之形成等)。藉由以上的製造方法,可製造上述之構成的基座100。
A-3.性能評價: 針對實施例的基座100與比較例1~3的基座,進行以下所說明之性能評價。
A-3-1.關於實施例及比較例1~3: 圖4係顯示基座100的性能評價之結果的說明圖。實施例的基座100係利用上述製造方法所製造者。比較例1~3的基座具備保持板、支持體及接合層。相對於實施例的基座100,比較例1~3的基座之接合劑係藉由形成材料與接合溫度之至少一者不同的製造方法所製造者。實施例的基座100與比較例的基座有以下共同點。
[保持板的構成]
‧材料:以AlN為主成分之陶瓷
‧直徑:100(mm)~500(mm)
‧厚度:3(mm)~15(mm)
[支持體的構成]
‧材料:以AlN為主成分之陶瓷
‧外徑:30(mm)~90(mm)
‧內徑:10(mm)~60(mm)
‧上下方向的長度:100(mm)~300(mm)
[接合層的外形]
‧外徑:30(mm)~90(mm)
‧內徑:10(mm)~60(mm)
‧厚度:50(μm)~70(μm)
亦如圖4所示,實施例的基座100與比較例1~3的基座之接合劑的形成材料(接合層的形成材料)與接合溫度之至少一者相異。具體而言,如下所述。接合層的形成材料,係藉由上述的加熱、加壓而接合劑的形成材料進行化學反應所生成之材料。
實施例的基座100:
‧接合劑的形成材料:包含Eu2O3與Gd2O3與Al2O3
‧接合層30的形成材料:包含(Eu,Gd)3Al5O12與GdAlO3與Al2O3
‧接合溫度:1675(℃)
比較例1的基座:
‧接合劑的形成材料:包含Eu2O3與Al2O3,不包含Gd2O3
‧接合層30的形成材料:包含Eu3Al5O12與Al2O3,不包含Gd3Al5O12與GdAlO3
‧接合溫度:與實施例相同
比較例2的基座:
‧接合劑的形成材料:包含Gd2O3與Al2O3,不包含Eu2O3
‧接合層30的形成材料:包含GdAlO3與Al2O3,不包含(Eu,Gd)3Al5O12與EuAlO3
‧接合溫度:1725(℃)(溫度高於實施例)
比較例3的基座:
‧接合劑的形成材料:與比較例2相同
‧接合層30的形成材料:與比較例2相同
‧接合溫度:與實施例相同(溫度低於比較例2)
A-3-2.評價手法: 作為接合層的接合強度之評價,針對實施例的基座100及比較例1~3的基座,進行He(氦)洩漏試驗與SEM(掃描式電子顯微鏡)觀察。
[He洩漏試驗]
在He洩漏試驗中,例如在實施例的基座100之支持構件20的下側開口端連接He洩漏偵檢器(未圖示),自接合層30的外周側噴上He氣體。接下來,基於He洩漏偵檢器的檢測結果,確認是否檢測到接合層30中之He的洩漏。檢測到He的洩漏,係表示在接合層30中存在空洞,因此接合強度低。
[SEM觀察]
在SEM觀察中,例如,將實施例的基座100之包含保持構件10、支持構件20及接合層30之指定尺寸的接合部分切出作為試驗片,利用SEM觀察此試驗片。
A-3-3.評價結果: [He洩漏試驗]
實施例的基座100與比較例2的基座,在He洩漏試驗中未檢測到He的洩漏。另一方面,比較例1、3的基座,在He洩漏試驗中檢測到He的洩漏。
[SEM觀察]
圖5係示意地顯示實施例之基座100的SEM影像之說明圖,圖6係示意地顯示比較例1之基座的SEM影像之說明圖。如圖5所示,可知在實施例的基座100中,為接合層30的形成材料之(Eu,Gd)3Al5O12、GdAlO3及Al2O3,尤 其是(Eu,Gd)3Al5O12,係以填補為保持構件10及支持構件20的形成材料之AlN間的間隙、保持構件10與接合層30之邊界的間隙、支持構件20與接合層30之邊界的間隙(以下統稱為「各間隙」)之方式擴散。製造實施例的基座100所使用之包含Eu2O3與Gd2O3與Al2O3之接合劑,被認為係因即使在1675(℃)等較低的溫度時流動性亦高,故接合劑會流入AlN之間的間隙等,藉此在形成接合層30之際,藉由(Eu,Gd)3Al5O12與GdAlO3與Al2O3之任一者而填補各間隙。實施例的基座100被認為係因各間隙被填補,故在He洩漏試驗中,未檢測到He的洩漏。此外,實施例的基座100在三點彎曲試驗中,相對於標準荷重,接合層30的接合強度係約90%左右的強度。此外,標準荷重係整體為以AlN為主成分之陶瓷所形成之母材的破壞荷重。
如圖6所示,可知在比較例1的基座中,各間隙中不存在Eu3Al5O12與Al2O3之任一者,各間隙成為空洞B。製造比較例1的基座所使用之包含Eu2O3與Al2O3的接合劑,被認為係因在1675(℃)等較低的溫度時流動性低,故不會流入各間隙,其結果,在形成接合層之際,各間隙成為空洞B。比較例1的基座被認為係因各間隙未被填補,故在He洩漏試驗中檢測到He的洩漏。又,比較例1的基座之接合層中因存在多個空洞B,故該接合層的接合強度被認為低於實施例的基座100之接合層30的接合強度。
又,在比較例2的基座中,雖未圖示,但為接 合層的形成材料之GdAlO3及Al2O3以填補各間隙之方式擴散。另一方面,在比較例3的基座中,雖未圖示,但各間隙中不存在為接合層的形成材料之GdAlO3與Al2O3之任一者,各間隙成為空洞。如此一來,比較例2的基座與比較例3的基座,即使接合層(接合劑)的形成材料相同,SEM觀察的結果亦不同。此被認為係因比較例2、3的基座所使用之包含Gd2O3與Al2O3的接合劑,在1725(℃)等較高的溫度時流動性高,但在1675(℃)等較低的溫度時流動性低。比較例2的基座被認為係因各間隙被填補,故在He洩漏試驗中未檢測到He的洩漏,比較例3的基座被認為係因各間隙未被填補,故在He洩漏試驗中檢測到He的洩漏。此外,比較例2的基座之接合層中因間隙少,故該接合層的接合強度被認為與實施例的基座100之接合層30的接合強度為相同程度。在比較例3的基座之接合層中因存在多個空洞,故該接合層的接合強度被認為低於實施例的基座100之接合層30的接合強度。
A-4.本實施形態的效果: 本案之發明人藉由實驗等發現,相較於使用包含Gd的接合劑之以往的製造方法,使用包含Eu2O3與Gd2O3與Al2O3的接合劑時,即使在將藉由以AlN為主成分之材料所形成之陶瓷構件彼此進行接合時的接合溫度低,亦能以高接合強度進行接合。於是,若根據本實施形態,可藉由使用包含Eu2O3與Gd2O3與Al2O3的接合劑,而降低接合溫度並同時抑制接合層30之接合強度的降低。具體而言,如上所述,若根據實施例的基座100,則相較於使用 包含Gd2O3之接合劑的比較例2的基座,可降低接合溫度並同時確保相同程度的接合強度。又,藉由降低接合溫度,可抑制保持構件10或支持構件20之熱所導致的變形。而且,若根據本實施形態,則可降低接合溫度並同時以約10分鐘的短接合時間確保高接合強度。藉由接合時間短,可使基座100的製造效率提升。
又,若根據本實施形態,即使在低溫時流動性亦高之(Eu,Gd)3Al5O12的含有率為0.1mol%以上,藉此可更有效果地抑制接合層30之接合強度的降低。
B.變形例: 本說明書所揭示之技術並未被限定於上述的實施形態,在不脫離其旨趣的範圍內可變形成各種形態,例如亦可為以下之變形。
在上述實施形態中,亦可不藉由接合層30而是藉由複數個接合部而接合保持構件10與支持構件20。具體而言,可在保持構件10與支持構件20之間,分散地形成複數個接合部,此複數個接合部被配置在與保持構件10與支持構件20之對向方向呈直交之一假想平面上,並且,經由為保持構件10及支持構件20的形成材料之AlN粒子而部分地連接保持構件10與支持構件20。
在上述實施形態及變形例中,在保持構件10與支持構件20之間,例如可夾有接合層30(接合部)以及與該接合層30(接合部)為不同組成之第二接合層(第二接合部)。亦即,可經由組成互不相同之複數個接合層或接合部而接合保持構件10與支持構件20。
形成上述實施形態及變形例中之保持構件10及支持構件20的陶瓷,若包含AlN作為主成分,則亦可包含其它元素。
在上述實施形態及變形例中,形成接合層30(接合部)之材料亦可包含(Eu,Gd)3Al5O12以外之含有Eu與Gd與Al之複合氧化物。又,形成接合層30(接合部)之材料亦可包含Al2O3、GdAlO3以外之物質(例如AlN)。又,如上述實施形態,形成接合層30(接合部)之材料,較佳為包含含有為鈣鈦礦結構或石榴石結構之稀土類元素及Al之1或複數個複合氧化物、與Al2O3之中的二種以上的物質。此外,接合層30中之(Eu,Gd)3Al5O12的含有率雖可小於0.1mol%,但較佳為0.1mol%以上。
在上述實施形態及變形例中,形成接合劑之材料,若包含Eu2O3與Gd2O3與Al2O3,則亦可包含其它元素。
又,上述實施形態中之基座100的製造方法僅為一例,可有各種變形。
本發明不僅適用於基座100,亦可適用於聚醯亞胺加熱器等其它加熱裝置、具備陶瓷板與底板且在陶瓷板的表面上保持對象物之保持裝置(例如,靜電吸盤或真空吸盤)、噴灑頭等其他半導體製造裝置用零件。
Claims (5)
- 一種半導體製造裝置用零件之製造方法,其特徵在於包含以下步驟:準備第一陶瓷構件的步驟,該第一陶瓷構件係藉由以AlN為主成分之材料而形成;準備第二陶瓷構件的步驟,該第二陶瓷構件係藉由以AlN為主成分之材料而形成;以及在使包含Eu 2O 3與Gd 2O 3與Al 2O 3之接合劑夾在該第一陶瓷構件與該第二陶瓷構件之間的狀態下,進行加熱加壓,藉此接合該第一陶瓷構件與該第二陶瓷構件之步驟。
- 一種半導體製造裝置用零件,其係具備藉由以AlN為主成分之材料所形成之第一陶瓷構件、藉由以AlN為主成分之材料所形成之第二陶瓷構件、以及配置於該第一陶瓷構件與該第二陶瓷構件之間且接合該第一陶瓷構件與該第二陶瓷構件之接合層的半導體製造裝置用零件,其特徵在於,該接合層包含含有Eu與Gd與Al之複合氧化物。
- 如請求項2之半導體製造裝置用零件,其中在該接合層中,該複合氧化物的含有率為0.1mol%以上。
- 一種半導體製造裝置用零件,其係具備藉由以AlN為主成分之材料所形成之第一陶瓷構件、 藉由以AlN為主成分之材料所形成之第二陶瓷構件、以及配置於該第一陶瓷構件與該第二陶瓷構件之間且接合該第一陶瓷構件與該第二陶瓷構件之複數個接合部的半導體製造裝置用零件,其特徵在於,該接合部包含含有Eu與Gd與Al之複合氧化物。
- 如請求項4之半導體製造裝置用零件,其中在該接合部中,該複合氧化物的含有率為0.1mol%以上。
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