TW201810445A - Apparatus for manufacturing semiconductor and method of manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor and method of manufacturing semiconductor device Download PDF

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TW201810445A
TW201810445A TW106104109A TW106104109A TW201810445A TW 201810445 A TW201810445 A TW 201810445A TW 106104109 A TW106104109 A TW 106104109A TW 106104109 A TW106104109 A TW 106104109A TW 201810445 A TW201810445 A TW 201810445A
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unit
preamble
semiconductor manufacturing
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manufacturing apparatus
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TW106104109A
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TWI649810B (en
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岡本直樹
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捷進科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling
    • H01L2221/6839Separation by peeling using peeling wedge or knife or bar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)

Abstract

An object of the present invention is to provide an apparatus for manufacturing a semiconductor which is able to easily change a push-up unit according to kinds. The apparatus for manufacturing a semiconductor comprises: a push-up unit for pushing a die up from the bottom of a dicing tape; and a collet for adsorbing the die. The push-up unit comprises: a first unit having a plurality of square shape blocks contacting with the dicing tape; and a second unit having a plurality of concentric blocks transferring vertical movement to each of the blocks, respectively, wherein the first unit is mounted on the top of the second unit.

Description

半導體製造裝置及半導體裝置的製造方法 Semiconductor manufacturing device and method for manufacturing semiconductor device

本揭露係有關於半導體製造裝置,可適用於例如具備頂出單元的黏晶機。 The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to, for example, a die attacher having an ejector unit.

一般而言,將被稱為晶粒的半導體晶片搭載於例如配線基板或引線框等(以下總稱為基板)之表面的黏晶機中,一般而言,會使用吸具等之吸附嘴而將晶粒搬運到基板上,一面賦予按壓力,同時藉由將接合材進行加熱以進行結著的動作(作業),會被反複進行。 Generally, a semiconductor wafer called a die is mounted on a die attacher such as a wiring board or a lead frame (hereinafter collectively referred to as a substrate). Generally, a suction nozzle such as a suction tool is used to mount the semiconductor wafer. The die is transferred to the substrate, and a pressing operation is performed while the bonding material is heated to perform the bonding operation (operation), which is repeated.

在黏晶機等之半導體製造裝置所致之晶粒結著工程之中,係有將從半導體晶圓(以下簡稱晶圓)所分割出來的晶粒予以剝離的剝離工程。在剝離工程中,係從切割帶背面藉由頂出單元而將晶粒予以頂出,從被保持在晶粒供給部的切割帶,1個1個地予以剝離,使用吸具等之吸附嘴而搬運至基板上。 In the die bonding process by a semiconductor manufacturing device such as a die attacher, there is a peeling process for peeling off the die separated from a semiconductor wafer (hereinafter referred to as a wafer). In the peeling process, the crystal grains are ejected by the ejection unit from the back of the dicing tape, and the dicing tape held by the crystal grain supply part is peeled off one by one, and the suction nozzles are used. It is carried on the substrate.

例如,根據日本特開2012-4393號公報(專利文獻1),從被黏貼在切割帶的複數晶粒之中將剝離對象的晶粒予以頂出而從切割帶予以剝離之際,將晶粒的周邊部 之中的所定部中的切割帶予以頂出以形成剝離起點,其後,將所定部以外部分的切割帶予以頂出而將晶粒從切割帶剝離下來。 For example, according to Japanese Patent Application Laid-Open No. 2012-4393 (Patent Document 1), when a grain to be peeled is ejected from a plurality of grains adhered to a dicing tape, and the crystalline grain is peeled from the dicing tape, Peripheral The dicing tape in the predetermined portion is ejected to form a peeling starting point, and thereafter, the dicing tape in a portion other than the predetermined portion is ejected to peel off the crystal grains from the dicing tape.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2012-4393號公報 [Patent Document 1] Japanese Patent Application Publication No. 2012-4393

從晶圓拾取晶粒時,必須要配合品種(例如晶粒尺寸)而設置夾具。可是,品種更換時的調整係很繁複且需要時間。拾取動作像是專利文獻1那樣為多段頂出等的情況下,是事前就做好在配合動作規格的結構裡,因此無法事後變更頂出單元。 When picking up a die from a wafer, a jig must be set in accordance with the variety (eg, die size). However, adjustments at the time of variety change are complicated and take time. In the case where the pick-up operation is a multi-stage ejection as in Patent Document 1, the ejection unit is prepared in a structure that matches the operation specifications in advance, so the ejection unit cannot be changed afterwards.

本揭露之課題在於,提供一種,可配合品種而容易變更頂出單元的半導體製造裝置。 The subject of the present disclosure is to provide a semiconductor manufacturing device that can easily change the ejection unit according to the type.

其他的課題與新穎的特徵,應可根據本說明書的描述及添附圖式而明瞭。 Other problems and novel features should be apparent from the description in this specification and the accompanying drawings.

若要簡單說明本揭露之中具有代表性者,則如以下所示。 To briefly explain the representative of this disclosure, it is as follows.

亦即,半導體製造裝置係具備:頂出單元,係將晶粒 從切割帶之下予以頂出;和吸具,係將前記晶粒予以吸附。前記頂出單元係具備:第1單元,係具有與前記切割帶接觸的四角狀之複數區塊;和第2單元,係具有對前記複數區塊之每一者獨立地傳達上下運動的同心圓狀之複數區塊。前記第1單元係被裝著於前記第2單元之上。 That is, the semiconductor manufacturing apparatus includes: an ejection unit, It is ejected from under the cutting belt; and the sucker is used to adsorb the previous grains. The prescriptive ejection unit includes: a first unit having a plurality of quadrangular blocks in contact with the precut cutting zone; and a second unit having concentric circles that independently convey the up-and-down motion to each of the preamble plural blocks Plural blocks of states. The preamble first unit is mounted on the preamble second unit.

若依據上記半導體製造裝置,可配合品種而容易變更頂出單元。 According to the semiconductor manufacturing apparatus described above, the ejection unit can be easily changed according to the product.

1‧‧‧晶粒供給部 1‧‧‧Crystal Supply Department

11‧‧‧晶圓 11‧‧‧ wafer

13‧‧‧頂出單元 13‧‧‧ ejection unit

13a‧‧‧第1單元 13a‧‧‧Unit 1

13a1‧‧‧區塊部 13a1‧‧‧ Block Department

13a2‧‧‧吸附部 13a2‧‧‧Adsorption Unit

13a3‧‧‧吸引部 13a3‧‧‧‧Attraction

13a4‧‧‧吸引部 13a4‧‧‧‧Attraction

A1~A6‧‧‧同心四角狀之區塊 A1 ~ A6‧‧‧‧Concentric quadrangular blocks

13b‧‧‧第2單元 13b‧‧‧Unit 2

B1~B6‧‧‧同心圓狀之區塊 B1 ~ B6‧‧‧‧Concentric circles

13c‧‧‧第3單元 13c‧‧‧Unit 3

13c0‧‧‧中央部 13c0‧‧‧ Central

13c1~13c6‧‧‧周邊部 13c1 ~ 13c6‧‧‧ Peripheral

C1~C6‧‧‧輸出部 C1 ~ C6‧‧‧‧Output section

16‧‧‧切割帶 16‧‧‧ cutting tape

2‧‧‧拾取部 2‧‧‧Pick up department

21‧‧‧拾取頭 21‧‧‧Pickup head

3‧‧‧中間平台部 3‧‧‧Middle Platform Department

31‧‧‧中間平台 31‧‧‧ intermediate platform

4‧‧‧結著部 4‧‧‧ Knotting Department

41‧‧‧結著頭 41‧‧‧ tied his head

7‧‧‧控制部 7‧‧‧Control Department

10‧‧‧黏晶機 10‧‧‧ Sticky Crystal Machine

D‧‧‧晶粒 D‧‧‧ Grain

P‧‧‧基板 P‧‧‧ substrate

[圖1]實施例所述之黏晶機從上觀看的概念圖 [Figure 1] Conceptual view of the crystal sticking machine described in the embodiment from above

[圖2]於圖1中從箭頭A方向觀看時,拾取頭及結著頭的動作的說明圖 [Fig. 2] Explanatory diagram of the movement of the pickup head and the head when viewed from the direction of arrow A in Fig. 1

[圖3]圖1的晶粒供給部的外觀斜視圖的圖示 [Fig. 3] An illustration of an external perspective view of the die supply section of Fig. 1. [Fig.

[圖4]圖1的晶粒供給部的主要部的概略剖面圖 [Fig. 4] A schematic cross-sectional view of a main part of the crystal grain supplying section of Fig. 1

[圖5]實施例所述之頂出單元的外觀斜視圖 [Fig. 5] An external oblique view of the ejection unit according to the embodiment

[圖6A]圖5的第1單元之一部分的上面圖 [Fig. 6A] A top view of a part of the first unit of Fig. 5

[圖6B]圖5的第2單元之一部分的上面圖 [Fig. 6B] A top view of a part of the second unit of Fig. 5

[圖6C]圖5的第3單元之一部分的上面圖 [Fig. 6C] A top view of a part of the third unit of Fig. 5

[圖7]圖5的頂出單元的縱剖面圖 [Fig. 7] A longitudinal sectional view of the ejection unit of Fig. 5

[圖8]圖5的頂出單元的縱剖面圖 [Fig. 8] A longitudinal sectional view of the ejection unit of Fig. 5

[圖9]實施例所述之頂出單元與拾取頭之中的吸具部 之構成的圖示 [Fig. 9] The suction unit in the ejection unit and the pickup head according to the embodiment Diagram of the composition

[圖10]實施例所述之黏晶機的拾取動作的說明用流程圖 [Fig. 10] A flowchart for explaining the picking operation of the die attacher according to the embodiment

[圖11]實施例所述之半導體裝置的製造方法的說明用流程圖 11 is a flowchart for explaining a method of manufacturing a semiconductor device according to an embodiment

[圖12A]變形例所述之頂出單元的外觀斜視圖 [Fig. 12A] Appearance perspective view of an ejection unit according to a modification

[圖12B]變形例所述之頂出單元的外觀斜視圖 [Fig. 12B] Appearance perspective view of the ejection unit according to the modification

[圖13]圖12A的第1單元的縱剖面圖 [Fig. 13] A longitudinal sectional view of the first unit of Fig. 12A

[圖14A]圖12A的頂出單元之一部分的縱剖面圖 [Fig. 14A] A longitudinal sectional view of a part of the ejection unit of Fig. 12A

[圖14B]從圖14A的頂出單元的一部拆下第1單元之狀態的縱剖面圖 [FIG. 14B] A longitudinal sectional view of a state where the first unit is removed from a part of the ejection unit of FIG. 14A

[圖15]變形例2所述之頂出單元的外觀斜視圖 [Fig. 15] An external perspective view of an ejection unit according to Modification 2

[圖16]圖15的第3單元的縱剖面圖 16 A longitudinal sectional view of a third unit of FIG. 15

[圖17]圖16的第3單元之一部分的上面圖 [Fig. 17] A top view of a part of the third unit of Fig. 16

[圖18]圖15的第3單元的變形例之一部分的上面圖 [Fig. 18] A top view of a part of a modification of the third unit of Fig. 15

以下,針對實施例及變形例,使用圖式來加以說明。但是,以下的說明中,同一構成元件係標示同一符號並且會省略重複說明。此外,圖式係為了使說明更為明確,因此和實際的態樣相比,各部的寬度、厚度、形狀等係會有模式性圖示的情況,但這僅只是一例而已,並非用來限定本發明的解釋。 Hereinafter, examples and modifications will be described using drawings. However, in the following description, the same constituent elements are denoted by the same reference numerals, and duplicate descriptions will be omitted. In addition, in order to make the description clearer, the width, thickness, and shape of each part may be schematically illustrated in comparison with the actual appearance. However, this is only an example and is not intended to limit it. Explanation of the invention.

[實施例] [Example]

圖1係實施例所述之黏晶機的概略的上面圖。圖2係於圖1中從箭頭A方向觀看時,拾取頭及結著頭的動作的說明圖。 FIG. 1 is a schematic top view of a die attacher according to the embodiment. FIG. 2 is an explanatory diagram of the movement of the pickup head and the head when viewed from the direction of arrow A in FIG. 1.

黏晶機10,大體來說,係具有:晶粒供給部1、拾取部2、中間平台部3、結著部4、搬運部5、基板供給部6、基板搬出部7、監視各部之動作並加以控制的控制部8。 The die attacher 10 generally includes a die supply section 1, a picking section 2, an intermediate stage section 3, a bonding section 4, a conveyance section 5, a substrate supply section 6, a substrate carry-out section 7, and monitoring operations of various sections. And control unit 8 for controlling.

首先,晶粒供給部1係供給要實裝於基板P的晶粒D。晶粒供給部1係具有:保持晶圓11的晶圓保持台12、從晶圓11將晶粒D予以頂出的以虛線所示的頂出單元13。晶粒供給部1係藉由未圖示的驅動手段而在XY方向上做移動,使要拾取的晶粒D往頂出單元13的位置移動。 First, the die supply unit 1 supplies the die D to be mounted on the substrate P. The die supply unit 1 includes a wafer holding table 12 that holds the wafer 11, and an ejection unit 13 indicated by a broken line to eject the die D from the wafer 11. The die supply unit 1 moves in the XY direction by a driving means (not shown) to move the die D to be picked up to the position of the ejection unit 13.

拾取部2係具有:用來拾取晶粒D的拾取頭21、使拾取頭21往Y方向移動的拾取頭的Y驅動部23、使吸具22升降、旋轉及往X方向移動的未圖示之各驅動部。拾取頭21係具有:將已被頂出之晶粒D予以吸附保持在尖端的吸具22(亦參照圖2),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21係具有,使吸具22升降、旋轉及往X方向移動的未圖示之各驅動部。 The picking section 2 includes a picking head 21 for picking up the die D, a Y driving section 23 of the picking head that moves the picking head 21 in the Y direction, and a not-shown illustration of lifting, rotating, and moving the suction tool 22 in the X direction. Of each driving section. The pick-up head 21 includes a suction tool 22 (see also FIG. 2) that sucks and holds the ejected crystal grains D at the tip, picks the crystal grains D from the crystal grain supply unit 1, and places them on the intermediate platform 31. The pick-up head 21 includes drive units (not shown) for lifting, rotating, and moving the suction tool 22 in the X direction.

中間平台部3係具有:將晶粒D予以暫時載置的中間平台31、用來辨識中間平台31上之晶粒D所需的平台辨識攝影機32。 The intermediate platform section 3 includes an intermediate platform 31 on which the die D is temporarily placed, and a platform identification camera 32 required to identify the die D on the intermediate platform 31.

結著部4,係從中間平台31拾取晶粒D,結著至被搬運過來的基板P上,或是以層積於已經被結著在基板P之上的晶粒之上的形式,進行結著。結著部4係具有:具備與拾取頭21同樣地將晶粒D吸附保持在尖端之吸具42(亦參照圖2)的結著頭41、使結著頭41往Y方向移動的Y驅動部43、拍攝基板P的位置辨識記號(未圖示),並辨識結著位置的基板辨識攝影機44。 The bonding part 4 picks up the die D from the intermediate platform 31 and is bonded to the transferred substrate P, or is laminated on the die already bonded to the substrate P. Knotted. The bonding section 4 includes a bonding head 41 having a suction tool 42 (see also FIG. 2) for holding and holding the crystal grain D on the tip in the same manner as the pickup head 21, and a Y drive for moving the bonding head 41 in the Y direction. The unit 43 captures a position identification mark (not shown) of the substrate P, and recognizes the substrate identification camera 44 where the position is attached.

藉由如此的構成,結著頭41,係基於平台辨識攝影機32的攝像資料來補正拾取位置、姿勢,從中間平台31拾取晶粒D,基於基板辨識攝影機44的攝像資料而將晶粒D結著於基板P。 With this structure, the head 41 is bound to correct the pickup position and posture based on the imaging data of the platform recognition camera 32, pick up the die D from the intermediate platform 31, and bind the die D based on the imaging data of the substrate recognition camera 44. A substrate P.

搬運部5係具備:載置一片或複數片基板P(圖1中係為4片)的基板搬運盤51、讓基板搬運盤51移動的盤軌52,具有被並行設置的相同結構的第1、第2搬運部。基板搬運盤51,係藉由將基板搬運盤51中所被設置的未圖示之螺帽,以沿著盤軌52而被設置的未圖示之滾珠螺桿加以驅動而移動。 The conveying section 5 includes a substrate conveying tray 51 on which one or a plurality of substrates P (four in FIG. 1 are shown), and a tray rail 52 for moving the substrate conveying tray 51. The conveying section 5 has a first structure having the same structure and provided in parallel. 2. The second transportation unit. The substrate transfer tray 51 is moved by driving a non-illustrated nut provided on the substrate transfer tray 51 by a ball screw (not shown) provided along the disk rail 52.

藉由如此構成,基板搬運盤51,係以基板供給部6將基板P予以載置,沿著盤軌52而移動至結著位置,結著後,移動至基板搬出部7,將基板P交給基板搬出部7。第1、第2搬運部,係彼此獨立地被驅動,在對一方的基板搬運盤51上所被載置之基板P正在結著晶粒D時,他方的基板搬運盤51,係將基板P予以搬出,回到基板供給部6,進行載置新的基板P等之準備。 With this structure, the substrate transfer tray 51 carries the substrate P by the substrate supply unit 6 and moves to the bonding position along the disk rail 52. After the bonding, the substrate transfer tray 51 is moved to the substrate carrying portion 7 and the substrate P is delivered. Give the substrate carrying-out section 7. The first and second conveying sections are driven independently of each other. When the substrate P placed on one substrate conveying tray 51 is being bonded to the die D, the other substrate conveying tray 51 is used to convey the substrate P. It is carried out and returned to the substrate supply unit 6 to prepare for placing a new substrate P or the like.

控制部8係具備:將監視黏晶機10的各部之動作並加以控制的程式(軟體)予以儲存的記憶體、執行記憶體中所被儲存之程式的中央處理裝置(CPU)。 The control unit 8 is provided with a memory that stores programs (software) that monitor and control the operations of the various parts of the die attacher 10, and a central processing unit (CPU) that executes the programs stored in the memory.

接著,關於晶粒供給部1的構成,使用圖3及圖4來說明。圖3係為晶粒供給部的外觀斜視圖的圖示。圖4係為晶粒供給部的主要部的概略剖面圖。 Next, the structure of the crystal grain supply part 1 is demonstrated using FIG. 3 and FIG. 4. FIG. FIG. 3 is a diagram showing an external perspective view of a die supply unit. FIG. 4 is a schematic cross-sectional view of a main part of a crystal grain supply unit.

晶粒供給部1係具備:往水平方向(XY方向)移動的晶圓保持台12、和往上下方向移動的頂出單元13。晶圓保持台12係具有:將晶圓環14予以保持的擴張環15、將已被保持於晶圓環14的複數晶粒D所被接著的切割帶16予以水平定位的支持環17。頂出單元13係被配置在支持環17的內側。 The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and an ejection unit 13 that moves in the vertical direction. The wafer holding table 12 includes an expansion ring 15 that holds the wafer ring 14, and a support ring 17 that horizontally positions a dicing tape 16 to which a plurality of dies D held by the wafer ring 14 are attached. The ejection unit 13 is arranged inside the support ring 17.

晶粒供給部1,係在晶粒D的頂出時,使保持有晶圓環14的擴張環15下降。其結果為,被保持於晶圓環14的切割帶16係被拉伸而擴大晶粒D之間隔,藉由頂出單元13從晶粒D下方將晶粒D予以頂出,提升晶粒D的拾取性。此外,隨著薄型化而將晶粒接著於基板的接著劑,係從液狀變成薄膜狀,在晶圓11與切割帶16之間係黏貼有一種被稱為晶粒黏結膜(DAF)18的薄膜狀之接著材料。在具有晶粒黏結膜18的晶圓11中,切割係對晶圓11與晶粒黏結膜18進行之。因此,在剝離工程中,係將晶圓11與晶粒黏結膜18從切割帶16剝離下來。此外,以下係無視於晶粒黏結膜18的存在,來說明剝離工程。 The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is ejected. As a result, the dicing tape 16 held by the wafer ring 14 is stretched to expand the interval between the crystal grains D, and the ejection unit 13 ejects the crystal grains D from below the crystal grains D, thereby increasing the crystal grains D. Pickup. In addition, the adhesive that adheres the crystal grains to the substrate as the thickness decreases has changed from a liquid state to a thin film state, and a type of grain adhesion film (DAF) 18 is pasted between the wafer 11 and the dicing tape 16. Film-like adhesive material. In the wafer 11 having the die bonding film 18, dicing is performed on the wafer 11 and the die bonding film 18. Therefore, in the peeling process, the wafer 11 and the die bonding film 18 are peeled from the dicing tape 16. In addition, the following will explain the peeling process regardless of the existence of the crystal grain adhesive film 18.

接著,針對頂出單元13,使用圖5、6A~ 6D、7、8來說明。圖5係為實施例所述之頂出單元的外觀斜視圖。圖6A係為圖5的第1單元之一部分的上面圖。圖6B係為圖5的第2單元之一部分的上面圖。圖6C係為圖5的第3單元之一部分的上面圖。圖7係為圖5的頂出單元的縱剖面圖。圖8係為圖5的頂出單元的縱剖面圖。 Next, for the ejection unit 13, FIGS. 5 and 6A are used. 6D, 7, 8 to explain. FIG. 5 is an external perspective view of the ejection unit according to the embodiment. FIG. 6A is a top view of a part of the first unit of FIG. 5. FIG. FIG. 6B is a top view of a part of the second unit of FIG. 5. FIG. FIG. 6C is a top view of a part of the third unit of FIG. 5. FIG. FIG. 7 is a longitudinal sectional view of the ejection unit of FIG. 5. FIG. 8 is a longitudinal sectional view of the ejection unit of FIG. 5.

頂出單元13係具備:第1單元13a、第1單元13a所被裝著之第2單元13b、第2單元13b所被裝著之第3單元13c。第2單元13b及第3單元13c係為無關於品種而為共通的部分,第1單元13a係為隨著每一品種而可更換的部分。 The ejection unit 13 includes a first unit 13a, a second unit 13b on which the first unit 13a is mounted, and a third unit 13c on which the second unit 13b is mounted. The second unit 13b and the third unit 13c are common parts regardless of the variety, and the first unit 13a is a part that can be replaced with each variety.

第1單元13a係具有:具有區塊A1~A6的區塊部13a1、具有複數吸附孔的汽包頭13a2、吸引孔13a3、汽包吸附的吸引孔13a4;將第2單元13b的同心圓狀之區塊B1~B6的上下運動,轉換成同心四角狀之6個區塊A1~A6的上下運動。6個區塊A1~A6係可獨立地上下運動。同心四角狀之區塊A1~A6的平面形狀係被構成為符合於晶粒D的形狀。晶粒尺寸較小的情況下,同心四角狀之區塊之數量係少於6個而被構成。此情況下,例如,第3單元的輸出部及第2單元的同心圓狀之區塊係不被使用。這是藉由,第3單元的複數輸出部及第2單元的同心圓狀之區塊係可彼此獨立地上下運動(或不做上下運動),而成為可能。 The first unit 13a includes: a block portion 13a1 having blocks A1 to A6, a steam drum head 13a2 having a plurality of adsorption holes, a suction hole 13a3, and a suction hole 13a4 adsorbed by the steam drum; and a concentric circle of the second unit 13b The up and down movements of blocks B1 to B6 are transformed into the up and down movements of the six blocks A1 to A6 in concentric quadrangular shape. The six blocks A1 ~ A6 can move up and down independently. The planar shapes of the concentric quadrangular blocks A1 to A6 are configured to conform to the shape of the crystal grain D. When the grain size is small, the number of concentric quadrangular blocks is less than six. In this case, for example, the output unit of the third unit and the concentric block of the second unit are not used. This is made possible by the plural output units of the third unit and the concentric circle-shaped blocks of the second unit being able to move up and down (or without doing up and down movement) independently of each other.

第2單元13b,係具有圓管狀之區塊B1~ B6、外周部13b2;將第1單元13a的圓周上所被配置之輸出部C1~C6的上下運動,轉換成同心圓狀之6個區塊B1~B6的上下運動。6個區塊B1~B6係可獨立地上下運動。 The second unit 13b is a block B1 ~ B6, outer peripheral portion 13b2; converting up and down movements of the output portions C1 to C6 arranged on the circumference of the first unit 13a into up and down movements of the six blocks B1 to B6 in a concentric circle shape. The six blocks B1 ~ B6 can move up and down independently.

第3單元13c係具備中央部13c0和6個周邊部13c1~13c6。中央部13c0係具有:在上面的圓周上被等間隔地配置而獨立地上下運動的6個輸出部C1~C6。周邊部13c1~13c6係可將各個輸出部C1~C6予以彼此獨立地驅動。周邊部13c1~13c6係分別具備馬達M1~M6,在中央部13c0係具備,將馬達的旋轉藉由凸輪或連桿而轉換成上下運動的柱塞機構P1~P6。柱塞機構P1~P6係對輸出部C1~C6給予上下運動。此外,馬達M2、M5及柱塞機構P2、P5係未圖示。 The third unit 13c includes a central portion 13c0 and six peripheral portions 13c1 to 13c6. The central portion 13c0 has six output portions C1 to C6 that are arranged at equal intervals on the upper circumference and move independently up and down. The peripheral portions 13c1 to 13c6 can drive the output portions C1 to C6 independently of each other. The peripheral portions 13c1 to 13c6 are provided with motors M1 to M6, respectively, and the central portion 13c0 series is provided with plunger mechanisms P1 to P6 that convert the rotation of the motor into a vertical movement by a cam or a link. The plunger mechanisms P1 to P6 give up and down movements to the output portions C1 to C6. The motors M2 and M5 and the plunger mechanisms P2 and P5 are not shown.

接著,關於頂出單元與吸具之關係,使用圖9來說明。圖9係為實施例所述之頂出單元與拾取頭之中的吸具部之構成的圖示。 Next, the relationship between the ejection unit and the suction tool will be described using FIG. 9. FIG. 9 is a diagram showing the configurations of the suction unit in the ejection unit and the pickup head according to the embodiment.

如圖9所示,吸具部20係具有:吸具22、用來保持吸具22的吸具保持器24、分別被設置用來吸附晶粒D所需之吸引孔22v、23v。 As shown in FIG. 9, the sucker unit 20 includes a sucker 22, a sucker holder 24 for holding the sucker 22, and suction holes 22v and 23v required for sucking the crystal grain D, respectively.

第1單元13a係在上面周邊部具有汽包頭13a2。汽包頭13a2係具有複數吸附孔HL和空洞部CV,從吸引孔13a3進行吸引,將被吸具22所拾取的晶粒D的周邊的晶粒Dd,隔著切割帶16而加以吸引。在圖9中係在區塊部13a1的周圍只圖示出一列吸附孔HL,但為了穩 定保持非拾取對象之晶粒Dd而是被設置有複數列。透過同心四角狀之區塊A1~A6的各區塊之間的間隙A1v、A2v、A3v、A4v、A5v及第1單元13a的汽包內的空洞部而從汽包吸附的吸引孔13a4加以吸引,將被吸具22所拾取之晶粒D,隔著切割帶16而加以吸引。來自吸引孔13a3的吸引與來自吸引孔13a4的吸引係可獨立地進行。 The first unit 13a is provided with a drum head 13a2 at a peripheral portion of the upper surface. The drum head 13 a 2 has a plurality of suction holes HL and cavity portions CV, and sucks through the suction holes 13 a 3 to suck the crystal grains Dd around the crystal grains D picked up by the suction tool 22 through the cutting tape 16. In FIG. 9, only one row of suction holes HL is shown around the block portion 13 a 1. It is assumed that the crystal grains Dd which are not the objects to be picked up are provided with a plurality of columns. Through the gaps A1v, A2v, A3v, A4v, A5v and the cavity in the steam drum of the first unit 13a through the gaps A1v, A2v, A3v, A4v, A5v of the concentric quadrangular blocks A1 to A6, they are attracted from the suction holes 13a4 absorbed by the drum , The grain D picked up by the suction tool 22 is attracted through the cutting tape 16. The suction from the suction hole 13a3 and the suction system from the suction hole 13a4 can be performed independently.

本實施例的頂出單元13,係藉由改變第1單元的區塊之形狀、區塊之數量,就可適用於各種晶粒,例如區塊數為6個時,則可適用晶粒尺寸為20mm□以下的晶粒。藉由增加第3單元的輸出部之數量、第2單元的同心圓狀之區塊之數量及第1單元的同心四角狀之區塊之數量,也可適用晶粒尺寸大於20mm□的晶粒。 The ejection unit 13 of this embodiment can be applied to various grains by changing the shape and number of blocks of the first unit. For example, when the number of blocks is 6, the grain size is applicable. It is a grain below 20mm □. By increasing the number of output units of the third unit, the number of concentric circular blocks of the second unit, and the number of concentric quadrangular blocks of the first unit, it is also possible to apply crystal grains with a grain size larger than 20 mm. .

接著,關於上述構成所致之頂出單元13所致之拾取動作,使用圖10來說明。圖10係為拾取動作的處理流程的流程圖。 Next, the pick-up operation by the ejection unit 13 due to the above configuration will be described using FIG. 10. FIG. 10 is a flowchart of a processing flow of a pickup operation.

步驟S1:控制部8係以使得所要拾取之晶粒D會位於頂出單元13的正上方的方式而移動晶圓保持台12,以使得切割帶16的背面會接觸第3單元之上面的方式而移動頂出單元13。此時,如圖9所示,控制部8,係以使得區塊部13a1的各區塊A1~A6會與汽包頭13a2的表面形成同一平面的方式,藉由汽包頭13a2的吸附孔HL、與區塊間之間隙A1v、A2v、A3v、A4v、A5v,而將切割帶16予以吸附。 Step S1: The control unit 8 moves the wafer holding table 12 so that the die D to be picked up is located directly above the ejection unit 13, so that the back surface of the dicing tape 16 contacts the upper surface of the third unit And the ejector unit 13 is moved. At this time, as shown in FIG. 9, the control unit 8 makes the blocks A1 to A6 of the block portion 13a1 form the same plane as the surface of the drum head 13a2 through the suction holes HL of the drum head 13a2, And the gaps A1v, A2v, A3v, A4v, A5v between the blocks, and the cutting tape 16 is adsorbed.

步驟2:控制部8係使吸具部20下降,定位 在要拾取的晶粒D之上,藉由吸引孔22v、24v而將晶粒D予以吸附。 Step 2: The control unit 8 lowers and positions the suction unit 20 On the grain D to be picked up, the grain D is adsorbed by the suction holes 22v and 24v.

步驟3:控制部8係將區塊部13a1的區塊從外側逐漸上升而進行剝離動作。亦即,控制部8係以馬達M6來驅動柱塞機構P6,只令最外側的區塊A6,上升達數十μm至數百μm,然後停止。其結果為,在區塊A6的周邊會形成切割帶16是隆起的頂出部分,在切割帶16與晶粒黏結膜18之間可以造成微小的空間,亦即剝離起點。藉由該空間而可大幅降低投錨效應,亦即大幅降低對晶粒D所施加的應力,而可確實地進行之後的剝離動作。接著,控制部8係以馬達M5來驅動柱塞機構P5,只令第2外側的區塊A5上升成比區塊A6還高而停止。接著,控制部8係以馬達M4來驅動柱塞機構P4,只令第3外側的區塊A4上升成比區塊A5還高而停止。接著,控制部8係以馬達M3來驅動柱塞機構P3,只令第4外側的區塊A3上升成比區塊A4還高而停止。接著,控制部8係以馬達M2來驅動柱塞機構P2,只令第5外側的區塊A2上升成比區塊A3還高而停止。最後,控制部8係以馬達M1來驅動柱塞機構P1,只令最內側的區塊A1上升成比區塊A2還高而停止。 Step 3: The control section 8 gradually lifts the blocks of the block section 13a1 from the outside to perform a peeling operation. That is, the control unit 8 drives the plunger mechanism P6 with the motor M6, and only raises the outermost block A6 by several tens μm to several hundreds μm, and then stops. As a result, a cutting part 16 is formed as a bulge on the periphery of the block A6, and a minute space can be created between the cutting band 16 and the die bonding film 18, that is, the starting point of peeling. This space can greatly reduce the anchoring effect, that is, the stress applied to the crystal grain D can be greatly reduced, and the subsequent peeling operation can be performed reliably. Next, the control unit 8 drives the plunger mechanism P5 with the motor M5, and only the block A5 on the second outer side rises higher than the block A6 and stops. Next, the control unit 8 drives the plunger mechanism P4 with the motor M4, and only the block A4 on the third outer side rises higher than the block A5 and stops. Next, the control unit 8 drives the plunger mechanism P3 with the motor M3, and only the block A3 on the fourth outer side rises higher than the block A4 and stops. Next, the control unit 8 drives the plunger mechanism P2 with the motor M2, and only the block A2 on the fifth outer side rises higher than the block A3 and stops. Finally, the control unit 8 uses the motor M1 to drive the plunger mechanism P1, and only the innermost block A1 rises higher than the block A2 and stops.

步驟S4:控制部8係令吸具上升。步驟S3的最後的狀態中,切割帶16與晶粒D的接觸面積係變成可藉由吸具的上升而剝離的面積,可藉由吸具22的上升而將晶粒D予以剝離。 Step S4: The control unit 8 raises the suction tool. In the final state of step S3, the contact area between the dicing tape 16 and the crystal grain D becomes an area that can be peeled off by the lifting of the suction tool, and the crystal grain D can be peeled off by the lifting of the suction tool 22.

步驟S5:控制部8係以使得區塊部13a1的各區塊A1~A6會與汽包頭13a2的表面形成同一平面的方式,停止汽包頭13a2的吸附孔HL、與區塊間之間隙A1v、A2v、A3v、A4v、A5v所致之切割帶16的吸附。控制部8係以使得第1單元之上面會遠離從切割帶16的背面的方式,而移動頂出單元13。 Step S5: The control unit 8 stops the adsorption holes HL of the drum head 13a2, the gap A1v, Adsorption of cutting tape 16 by A2v, A3v, A4v, A5v. The control unit 8 moves the ejection unit 13 so that the upper surface of the first unit is away from the rear surface of the cutting tape 16.

控制部8係重複步驟S1~S5,將晶圓11的良品的晶粒予以拾取。 The control unit 8 repeats steps S1 to S5 to pick up the good crystal grains of the wafer 11.

接著,關於使用了實施例所述之黏晶機的半導體裝置的製造方法,使用圖11來說明。圖11係為半導體裝置的製造方法的流程圖。 Next, a method for manufacturing a semiconductor device using the die attacher described in the examples will be described with reference to FIG. 11. FIG. 11 is a flowchart of a method of manufacturing a semiconductor device.

步驟S11:將保持有被黏貼有從晶圓11所被分割之晶粒D的切割帶16的晶圓環14,放入晶圓匣(未圖示),搬入至黏晶機10。控制部8係從被充填有晶圓環14的晶圓匣,將晶圓環14供給至晶粒供給部1。又,準備基板P,並搬入至黏晶機10。控制部8係以基板供給部6將基板P載置於基板搬運盤51。 Step S11: The wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is adhered is put into a wafer cassette (not shown), and carried into the die attacher 10. The control unit 8 supplies the wafer ring 14 to the die supply unit 1 from a wafer cassette filled with the wafer ring 14. The substrate P is prepared and carried into the die attacher 10. The control unit 8 places the substrate P on the substrate transfer tray 51 with the substrate supply unit 6.

步驟S12:控制部8係將藉由步驟S1~S5而分割好的晶粒,從晶圓加以拾取。 Step S12: The control unit 8 picks up the dies that have been divided in steps S1 to S5 from the wafer.

步驟S13:控制部8係將已拾取之晶粒搭載於基板P上或層積於已經結著的晶粒之上。控制部8係將從晶圓11拾取之晶粒D載置於中間平台31,以結著頭41從中間平台31再度拾取晶粒D,結著於被搬運過來的基板P上。 Step S13: The control unit 8 mounts the picked-up crystal grains on the substrate P or laminates the crystal grains already deposited. The control unit 8 places the die D picked up from the wafer 11 on the intermediate stage 31, picks up the die D again from the intermediate stage 31 with a head 41, and binds the die D to the substrate P that has been transferred.

步驟S14:控制部8係以基板搬出部7從基板搬運盤51取出已被結著有晶粒D的基板P。從黏晶機10搬出基板P。 Step S14: The control unit 8 uses the substrate carrying-out unit 7 to take out the substrate P to which the crystal grains D are bound from the substrate carrying tray 51. The substrate P is carried out from the die attacher 10.

<變形例1> <Modification 1>

接著,關於頂出單元的變形例1,使用圖12A、12B、13、14A、14B來說明。圖12A係為變形例1所述之頂出單元的外觀斜視圖。圖12B係為變形例1所述之頂出單元的外觀斜視圖。圖13係為圖12A的第1單元的縱剖面圖。圖14A係為圖12A的頂出單元的第1單元及第2單元之一部分的縱剖面圖。圖14B係為將圖12A的第1單元予以拆下之狀態的縱剖面圖。 Next, a modification example 1 of the ejection unit will be described using FIGS. 12A, 12B, 13, 14A, and 14B. FIG. 12A is an external perspective view of an ejection unit according to Modification 1. FIG. FIG. 12B is an external perspective view of the ejection unit according to Modification 1. FIG. FIG. 13 is a longitudinal sectional view of a first unit of FIG. 12A. 14A is a longitudinal sectional view of a part of the first unit and the second unit of the ejection unit of FIG. 12A. FIG. 14B is a longitudinal sectional view showing a state where the first unit of FIG. 12A is removed. FIG.

頂出單元13A係具備:第1單元13Aa、和第1單元13Aa所被裝著之第2單元13Ab。第2單元13Ab係為無關於品種而為共通的部分,第1單元13Aa係為隨著每一品種而可更換的部分。 The ejection unit 13A includes a first unit 13Aa and a second unit 13Ab on which the first unit 13Aa is mounted. The second unit 13Ab is a common part regardless of the variety, and the first unit 13Aa is a part that can be replaced with each variety.

第1單元13Aa,係區塊數是與實施例的第1單元13a不同,其他係和第1單元13a相同。第1單元13Aa係具備:具有區塊AA1~AA4的區塊部13Aa1、具有複數吸附孔的汽包頭13Aa2、吸引孔13a3、汽包吸附的吸引孔13a4、將第2單元13Ab的同心圓狀之區塊BA1~BA4的上下運動傳達至同心四角狀之4個區塊A1~A4的構件aA1~aA4。 The first unit 13Aa is different from the first unit 13a in the embodiment, and the other units are the same as the first unit 13a. The first unit 13Aa is provided with a block portion 13Aa1 having blocks AA1 to AA4, a steam drum head 13Aa2 having a plurality of adsorption holes, a suction hole 13a3, a suction hole 13a4 adsorbed by a steam drum, and a concentric circle formed by the second unit 13Ab. The up and down movements of the blocks BA1 to BA4 are transmitted to the components aA1 to aA4 of the four blocks A1 to A4 in a concentric quadrilateral shape.

第2單元13Ab係具備:外周部13Ab1、藉由 覆蓋外周部13Ab1而裝著第1單元13Aa的構件13Ab2、將構件13Ab2鎖定(固定)在外周部13Ab1的構件12Ab3、同軸的圓管狀(管狀)之區塊BA1~BA4、將區塊BA1~BA4分別予以驅動的驅動部CA1~CA4。藉由鬆開構件12Ab3的鎖定,構件13Ab2係可往上移動,可使第1單元13Aa對第2單元13Ab進行脫著。驅動部CA1~CA4係在上下方向,從上起依序配置有驅動部CA1、CA2、CA3、CA4。4個驅動部CA1~CA4係可分別獨立地上下驅動4個區塊BA1~BA4,其結果為,4個區塊AA1~AA4係可獨立地上下運動。為了將驅動部CA1~CA4在上下方向做配置,可使橫方向的大小比實施例還小。 The second unit 13Ab includes: an outer peripheral portion 13Ab1, A member 13Ab2 covering the outer periphery 13Ab1 and containing the first unit 13Aa2, a member 13Ab2 locked (fixed) to the member 12Ab3 of the outer periphery 13Ab1, a coaxial circular tubular (tubular) block BA1 to BA4, a block BA1 to BA4 The driving sections CA1 to CA4 which are respectively driven. By releasing the lock of the member 12Ab3, the member 13Ab2 can move upward, and the first unit 13Aa can release the second unit 13Ab. The driving sections CA1 to CA4 are in the up-down direction, and the driving sections CA1, CA2, CA3, and CA4 are arranged in order from the top. The four driving sections CA1 to CA4 can drive the four blocks BA1 to BA4 independently. As a result, the four blocks AA1 to AA4 can move up and down independently. In order to arrange the driving portions CA1 to CA4 in the up-down direction, the size in the horizontal direction can be made smaller than in the embodiment.

頂出單元13A所致之拾取動作係和圖10所示的實施例的頂出單元13所致之動作相同。使用具備頂出單元13A之黏晶機的半導體裝置的製造方法係和圖11所示的實施例的半導體裝置的製造方法相同。 The pickup action by the ejection unit 13A is the same as the action by the ejection unit 13 of the embodiment shown in FIG. 10. The manufacturing method of the semiconductor device using the die attacher provided with the ejection unit 13A is the same as the manufacturing method of the semiconductor device of the embodiment shown in FIG. 11.

<變形例2> <Modification 2>

接著,關於頂出單元的變形例2,使用圖15~17來說明。圖15係為變形例2所述之頂出單元的外觀斜視圖。圖16係為圖15的第3單元的縱剖面圖。圖17係為圖16的第3單元之一部分的上面圖。 Next, a second modification of the ejection unit will be described using FIGS. 15 to 17. FIG. 15 is an external perspective view of an ejection unit according to Modification 2. FIG. FIG. 16 is a longitudinal sectional view of a third unit of FIG. 15. FIG. 17 is a top view of a part of the third unit of FIG. 16. FIG.

頂出單元13B係具備:第1單元13Ba、第1單元13Ba所被裝著之第2單元13Bb、第2單元13Bb所被裝著之第3單元13Bc。第2單元13Bb及第3單元 13Bc係為無關於品種而為共通的部分,第1單元13Ba係為隨著每一品種而可更換的部分。 The ejection unit 13B includes a first unit 13Ba, a second unit 13Bb on which the first unit 13Ba is mounted, and a third unit 13Bc on which the second unit 13Bb is mounted. Unit 2 13Bb and Unit 3 13Bc is a common part regardless of the variety, and the first unit 13Ba is a part that can be replaced with each variety.

第1單元13Ba係與第1單元13a的區塊數不同但為相同的結構,最多具備12個區塊。第2單元13Bb係與第2單元13b的區塊數不同但為相同的結構,最多具備12個區塊。 The first unit 13Ba is different from the first unit 13a in the number of blocks but has the same structure, and has a maximum of 12 blocks. The second unit 13Bb has the same number of blocks as the second unit 13b but has the same structure, and has a maximum of 12 blocks.

第3單元13Bc係具備中央部13Bc0和12個周邊部13c1~13c6、13d1~13d6。中央部13Bc0係具有:在上面之外側的圓周上被等間隔地配置而獨立地上下運動的6個輸出部C1~C6、和在內側的圓周上被等間隔配置而獨立地上下運動的6個輸出部D1~D6。周邊部13c1~13c6係被配置在周邊部13d1~13d6之上。周邊部13c1~13c6、13d1~13d6係可將各個輸出部C1~C6、D1~D6予以彼此獨立地驅動。周邊部13c1~13c6、13d1~13d6係分別具備馬達M1~M6、Md1~Md6,在中央部13Bc0係具備,將馬達的旋轉藉由凸輪或連桿而轉換成上下運動的柱塞機構P1~P6、Pd1~Pd6。柱塞機構P1~P6、Pd1~Pd6係對輸出部C1~C6、D1~D6給予上下運動。此外,馬達M1、M2、M4、M5、Md1、Md2、Md4、Md5及柱塞機構P1、P2、P4、P5、Pd1、Pd2、Pd4、Pd5係未圖示。 The third unit 13Bc includes a central portion 13Bc0 and 12 peripheral portions 13c1 to 13c6 and 13d1 to 13d6. The central portion 13Bc0 has six output portions C1 to C6 that are arranged at equal intervals on the outer periphery on the upper side and move independently up and down, and six output portions that are arranged on the inner circumference on the inner periphery to move up and down independently. Output sections D1 ~ D6. The peripheral portions 13c1 to 13c6 are arranged above the peripheral portions 13d1 to 13d6. The peripheral portions 13c1 to 13c6 and 13d1 to 13d6 can drive the output portions C1 to C6 and D1 to D6 independently of each other. The peripheral parts 13c1 to 13c6 and 13d1 to 13d6 are equipped with motors M1 to M6 and Md1 to Md6, respectively. The central part 13Bc0 is equipped with a plunger mechanism P1 to P6 that converts the rotation of the motor into a vertical movement by a cam or a link. , Pd1 ~ Pd6. The plunger mechanisms P1 to P6 and Pd1 to Pd6 give up and down movements to the output portions C1 to C6 and D1 to D6. The motors M1, M2, M4, M5, Md1, Md2, Md4, Md5, and the plunger mechanism P1, P2, P4, P5, Pd1, Pd2, Pd4, and Pd5 are not shown.

藉由將第3單元縱向層積而增加輸出部,可使更多的區塊作動。配置在上段的第3單元係必須要有,除了讓輸出部,還要讓下段單元用的柱塞的軸做貫通的空 間。在變形例2中係將上段與下段的第3單元的馬達的旋轉轉換成上下運動的柱塞機構的凸輪或連桿位置,錯開成同心圓上的內周部與外周部而配置,但如圖18所示,亦可藉由將上下的第3單元的角度(180°/設置點數,例如若為6輸出的第3單元則為30°)予以錯開配置來確保讓柱塞輸出部的軸做貫通的空間。藉由如此2段層積,就可連同輸出部而對應12點左右。又,亦可將上段的單元的輸出部減少1~3個來確保空間。 By increasing the output unit by vertically stacking the third unit, more blocks can be operated. The third unit must be installed in the upper section. In addition to the output section, the shaft of the plunger used in the lower section must be through. between. In the second modification, the rotation of the motors of the third unit of the upper and lower stages is converted into the cam or link position of the plunger mechanism that moves up and down, and the inner and outer peripheral parts on the concentric circles are staggered and arranged, but As shown in FIG. 18, the angle of the third unit above and below (180 ° / number of set points, for example, 30 ° for the third unit with 6 outputs) can be staggered to ensure that the The shaft makes through space. With this two-layer stacking, it is possible to cope with around 12 o'clock together with the output section. In addition, the output unit of the upper stage unit can be reduced by 1 to 3 to secure space.

在實施例中,在第3單元中將馬達的旋轉以凸輪或連桿做上下運動的動作點,在圓周上是存在有6點。在第2單元內從6點的圓周上的動作點,展開成6重的同心圓上的動作圓。在第1單元中是從同心圓上的動作圓連接至晶粒尺寸的角區塊的各零件。在變形例1中,在第2單元內是從被配置在上下方向的4點的動作點展開成4重的同心圓上的動作圓。在第1單元中是從同心圓上的動作圓連接至晶粒尺寸的角區塊的各零件。在變形例2中,第3單元的動作點最多可配置12點。藉由分解成最多12階段、6階段或4階段而頂出,對於複數種尺寸的晶粒,就可進行零件與製程的共用化。 In the embodiment, in the third unit, the operating point where the rotation of the motor is moved up and down by a cam or a connecting rod has 6 points on the circumference. In the second unit, the operation points on the 6-point circle are expanded into 6-point concentric circles. In the first unit, each part is connected from an operation circle on a concentric circle to a corner block of a grain size. In the modification 1, in the second unit, an operation circle expanded from four operation points arranged in the up-down direction into four concentric circles is developed. In the first unit, each part is connected from an operation circle on a concentric circle to a corner block of a grain size. In the second modification, the operating point of the third unit can be arranged up to 12 points. By disassembling it into a maximum of 12, 6, or 4 stages, it is possible to share parts and processes for grains of multiple sizes.

又,在實施例及變形例中,藉由實現各段是彼此不會互相影響(不發生干擾)的頂出行程,頂出方向/拉入方向均可依靠編程而自由設定,可提供此種頂出機構。亦即,由於各段是各自獨立而不會彼此干擾,因此設計容易。又,頂出高度/上下時序等可自由地選定。 Moreover, in the embodiment and the modification, by realizing the ejection strokes in which the segments do not affect each other (no interference occurs), the ejection direction / pull-in direction can be set freely by programming, and such a type can be provided. Eject the mechanism. That is, since the segments are independent and do not interfere with each other, the design is easy. In addition, the ejection height, the up-down timing, and the like can be freely selected.

由於至頂出夾具上面的同心圓結構為止係可共通,因此晶粒尺寸所致之品種更換,係藉由更換品種切換零件(第1單元)就可完成。品種切換零件的設計係變得容易。品種切換零件的設計係可迅速為之,而可減少交期/價格。也朝零件的共用化邁進。又,可縮短品種切換所涉及的時間。 Since it is common to the concentric circle structure above the ejection jig, the variety change due to the grain size can be completed by changing the variety switching part (the first unit). It is easy to design the system of the variety switching parts. Variety switching parts can be designed quickly, reducing lead time / price. We are moving towards the sharing of parts. In addition, it is possible to shorten the time involved in the variety change.

以上,雖然根據實施例及變形例而具體地說明本發明人所做的發明,但本發明係不限定於上記實施例及變形例,當然可以有各種變更。 Although the invention made by the present inventors has been specifically described based on the embodiments and the modifications, the present invention is not limited to the embodiments and the modifications described above, and of course, various modifications can be made.

例如,在實施例中柱塞機構的上下運動是使用馬達來進行,但亦可不用馬達而改為,將氣缸等之軸的前後動作使用平面凸輪來轉換成上下運動。 For example, in the embodiment, the up-and-down movement of the plunger mechanism is performed using a motor, but it is also possible to use a flat cam to convert the back-and-forth movement of a shaft such as a cylinder into an up-and-down movement without using a motor.

又,在需要較大的輸出或行程的情況下,馬達的旋轉的凸輪或連桿的尺寸會變大,無法收容在所定的空間的情況下,仍可藉由減少第3單元的每1段的輸出部來應對,而這減少的部分可藉由層積來彌補。 In addition, when a large output or stroke is required, the size of the rotating cam or the connecting rod of the motor will increase, and if it cannot be accommodated in a predetermined space, it is still possible to reduce each segment of the third unit. To reduce the output, and the reduction can be compensated by lamination.

又,從第3單元的輸出部令第2單元的區塊上升的柱塞機構,係亦可設計成像是相機的快門的釋放般地,使金屬線狀的芯在彈性的導軌內前後移動的結構。此情況下,可使馬達或氣缸等之柱塞凸輪的驅動部的配置,設置在較為遠離的位置,可提升配置的自由度。 In addition, the plunger mechanism that raises the block of the second unit from the output unit of the third unit can also be designed to move the metal wire-shaped core back and forth in the elastic guide rail like the release of the camera's shutter. structure. In this case, the arrangement of the driving portion of the plunger cam such as a motor or an air cylinder can be arranged at a relatively remote position, and the degree of freedom of arrangement can be improved.

又,雖然說明了第1單元的複數區塊之數量係為12個、6個或4個的例子,但只要為3個以上即可。雖然說明了第2單元的複數區塊之數量係為12個、6 個或4個的例子,但只要與第1單元的複數區塊之數量相同即可。雖然說明了第3單元的複數驅動輸出部之數量為12個或6個的例子,但只要與第2單元的複數區塊之數量相同即可。 In addition, although the example in which the number of the plural blocks of the first unit is 12, 6, or 4 has been described, it is only necessary that the number is 3 or more. Although it is explained that the number of the plural blocks of the second unit is 12, 6 Examples of four or four, but as long as the number of plural blocks of the first unit is the same. Although an example in which the number of the plural driving output units of the third unit is 12 or 6 has been described, it is sufficient if it is the same as the number of the plural blocks of the second unit.

又,雖然說明了第1單元的複數區塊係為同心四角狀,但亦可將四角狀區塊平行排列而構成。 In addition, although the plural blocks of the first unit have been described as being concentric quadrangular, the quadrangular blocks may be arranged in parallel.

又,在實施例中雖然是將拾取對象晶粒與周邊晶粒以相同時序予以吸附/釋放,但拾取對象晶粒與周邊晶粒亦可以各自不同的時序來進行吸附/釋放。藉此,可進行更確實的剝離。 Furthermore, in the embodiment, although the pick-up target grains and the surrounding grains are adsorbed / released at the same timing, the pick-up target grains and the peripheral grains may be adsorbed / released at different timings. Thereby, more reliable peeling can be performed.

又,在實施例中雖然各段的區塊是依序頂出,但由於各段係可獨立而各自不同地動作,因此頂出/拉向兩方向的動作亦可混合。 In addition, although the blocks of each segment are ejected sequentially in the embodiment, since the segments can operate independently and differently, the ejection / pulling motions in both directions can also be mixed.

又,在實施例中雖然說明在第1單元中使用區塊而將晶粒予以頂出的例子,但亦可取代區塊改為使用插銷(針)。 Moreover, in the embodiment, although an example in which the die is ejected by using a block in the first unit is described, a pin (pin) may be used instead of the block.

又,在實施例中雖然說明了使用晶粒黏結膜的例子,但亦可在基板設置用來塗布接著劑的預型部而不使用晶粒黏結膜。 Moreover, although the example which used the die-bonding film was demonstrated in the Example, the preform part for apply | coating an adhesive agent may be provided in a board | substrate without using a die-bonding film.

又,在實施例中雖然說明了,從晶粒供給部將晶粒以拾取頭加以拾取而載置於中間平台,將中間平台上所被載置之晶粒以結著頭結著於基板的黏晶機,但並非限定於此,亦可適用於從晶粒供給部拾取晶粒的半導體製造裝置。 In addition, in the examples, it was explained that the die is picked up by the pick-up head from the die supply unit and placed on the intermediate stage, and the die placed on the intermediate stage is bound to the substrate by a head. The die attacher is not limited to this, and can be applied to a semiconductor manufacturing apparatus that picks up a die from a die supply unit.

例如,亦可適用於,沒有中間平台和拾取頭,而將晶粒供給部的晶粒以結著頭結著於基板的黏晶機。 For example, the present invention is also applicable to a die attacher that does not have an intermediate stage and a pick-up head, and binds the crystal grains of the crystal grain supply unit to the substrate with a head.

又,亦可適用於,沒有中間平台,從晶粒供給部拾取晶粒並將晶粒拾取頭往上旋轉而將晶粒交給結著頭並以結著頭結著於基板的翻轉式黏晶機。 In addition, it can also be applied to a flip-type adhesive that does not have an intermediate platform, picks up the die from the die supply unit, and rotates the die picking head upward to hand over the die to the head and attach the head to the substrate. Crystal machine.

又,亦可適用於,沒有中間平台和結著頭,將從晶粒供給部以拾取頭拾取的晶粒載置於托盤等的晶粒排列機。 The present invention is also applicable to a grain aligning machine that does not have an intermediate stage and a head, and places the grains picked up by the pick-up head from the grain supply section on a tray.

13‧‧‧頂出單元 13‧‧‧ ejection unit

13a‧‧‧第1單元 13a‧‧‧Unit 1

13b‧‧‧第2單元 13b‧‧‧Unit 2

13c‧‧‧第3單元 13c‧‧‧Unit 3

13c0‧‧‧中央部 13c0‧‧‧ Central

13c1~13c6‧‧‧周邊部 13c1 ~ 13c6‧‧‧ Peripheral

Claims (18)

一種半導體製造裝置,係具備:頂出單元,係將晶粒從切割帶之下予以頂出;和吸具,係將前記晶粒予以吸附;前記頂出單元係具備:第1單元,係具有與前記切割帶接觸的四角狀之複數區塊;和第2單元,係具有對前記複數區塊之每一者獨立地傳達上下運動的同心圓狀之複數區塊;前記第1單元係被裝著於前記第2單元之上。 A semiconductor manufacturing device includes: an ejection unit for ejecting crystal grains from under a dicing tape; and a suction tool for adsorbing the former crystal grains; the pre-ejection unit includes: a first unit, which has The quadrangular plural block in contact with the precut cutting band; and the second unit is a concentric circular plural block that independently conveys the up-and-down movement to each of the plural preblocks; the first unit of the prescript is installed Focus on the second unit of the preface. 如請求項1的半導體製造裝置,其中,前記第1單元係將前記同心圓狀之複數區塊的上下運動,轉換成前記四角狀之複數區塊的上下運動。 The semiconductor manufacturing apparatus according to claim 1, wherein the first unit of the preamble converts the up-and-down movement of the concentric plural block of the preamble into the up-and-down movement of the plural block of the preamble quadrilateral. 如請求項1的半導體製造裝置,其中,前記第1單元係還具備:第1吸附部,係在前記複數區塊之外側,吸附前記晶粒之外側的周邊晶粒;和第2吸附部,係由吸附前記晶粒的前記複數區塊之間之間隙所構成。 The semiconductor manufacturing apparatus according to claim 1, wherein the first unit system of the preamble further includes: a first adsorption unit, which is located outside the plural blocks of the preamble, and adsorbs peripheral crystal grains on the outer side of the preceeding grains; and a second adsorption unit, It consists of the gaps between the preceding plural blocks that adsorb the preceding crystal grains. 如請求項3的半導體製造裝置,其中,前記第1吸附部與前記第2吸附部係可獨立地設定吸附時序。 The semiconductor manufacturing apparatus according to claim 3, wherein the first adsorption unit and the second adsorption unit can independently set the adsorption timing. 如請求項4的半導體製造裝置,其中,前記第1單元的複數區塊之數量係為3以上。 The semiconductor manufacturing apparatus according to claim 4, wherein the number of the plurality of blocks in the first unit of the preamble is three or more. 如請求項1的半導體製造裝置,其中,前記四角狀之複數區塊係被構成為同心狀。 The semiconductor manufacturing apparatus according to claim 1, wherein the preamble quadrangular plural blocks are configured to be concentric. 如請求項1的半導體製造裝置,其中,前記第1單元,係取代前記四角狀之複數區塊而改為具備被配置成四角狀的複數針。 For example, the semiconductor manufacturing apparatus according to claim 1, wherein the preamble first unit is provided with a plurality of pins arranged in a quadrangular shape instead of the quadrangular plural blocks in the preamble. 如請求項1的半導體製造裝置,其中,還具備:第3單元,係具有被配置在圓周上的複數驅動輸出部,其係對前記第2單元的複數區塊之每一者獨立地賦予上下運動。 The semiconductor manufacturing apparatus according to claim 1, further comprising: a third unit having a plurality of driving output units arranged on a circumference, and each of the plurality of blocks of the preceding second unit is independently provided with an upper and a lower unit. motion. 如請求項8的半導體製造裝置,其中,前記第2單元係將被配置在前記圓周上的複數輸出部的上下運動,轉換成前記同心圓狀之複數區塊的上下運動。 The semiconductor manufacturing device according to claim 8, wherein the preamble second unit converts the up-and-down movement of the complex output portion arranged on the circumference of the preamble into the up-and-down movement of the concentric circle-shaped complex block. 如請求項8的半導體製造裝置,其中,前記第3單元係還在側部具備複數驅動部,前記複數驅動部係分別對前記複數輸出部賦予上下運動。 The semiconductor manufacturing apparatus according to claim 8, wherein the preamble third unit is further provided with a plurality of drive units on the side, and the preamble plural drive units respectively provide vertical movement to the preamble plural output unit. 如請求項8的半導體製造裝置,其中,前記第2單元的複數區塊之數量、前記第3單元的複數驅動輸出部之數量,係皆為3以上。 For example, the semiconductor manufacturing apparatus according to claim 8, wherein the number of the plural blocks of the preamble second unit and the number of the plural drive output sections of the preamble third unit are all 3 or more. 如請求項8的半導體製造裝置,其中,將前記第3單元予以層積,且還具有複數驅動部地構成。 The semiconductor manufacturing apparatus according to claim 8, wherein the third unit described above is laminated and further includes a plurality of driving units. 如請求項1的半導體製造裝置,其中,前記晶粒係還在前記晶粒與前記切割帶之間,具備晶 粒黏結膜。 The semiconductor manufacturing device according to claim 1, wherein the preceding grain system is further provided between the preceding grain and the preceding cutting band, Granular conjunctiva. 如請求項1的半導體製造裝置,其中,還具備:拾取頭,係用來裝著前記吸具。 The semiconductor manufacturing apparatus according to claim 1, further comprising: a pick-up head, which is used to mount a pre-charging tool. 如請求項14的半導體製造裝置,其中,還具備:中間平台,係用來載置被前記拾取頭所拾取之晶粒;和結著頭,係將被載置於前記中間平台的晶粒,結著於基板或已經被結著的晶粒之上。 The semiconductor manufacturing apparatus according to claim 14, further comprising: an intermediate stage for holding the crystal grains picked up by the preamble pick-up head; and a head bonded to the die chips to be placed on the pre-processed intermediate stage, Bonded to a substrate or a die that is already bonded. 一種半導體裝置的製造方法,係具備:(a)準備如請求項1至15之任1項的半導體製造裝置的工程;和(b)準備用來保持具有晶粒之切割帶的晶圓環的工程;和(c)準備前記基板的工程;和(d)以前記頂出單元將前記晶粒予以頂出然後以前記吸具拾取前記晶粒的工程。 A method for manufacturing a semiconductor device, comprising: (a) preparing a semiconductor manufacturing device as claimed in any one of claims 1 to 15; and (b) preparing a wafer ring for holding a wafer ring having a dicing tape with a die Engineering; and (c) the preparation of the substrate mentioned above; and (d) the engineering of the previous ejection unit to eject the previous grain and then the previous suction tool to pick up the previous grain. 如請求項16的半導體裝置的製造方法,其中,還具備:(e)將前記晶粒結著於基板或已經被結著的晶粒之上的工程。 The method for manufacturing a semiconductor device according to claim 16, further comprising: (e) a process of bonding the aforementioned crystal grains to the substrate or the crystal grains already bonded. 如請求項17的半導體裝置的製造方法,其中,前記(d)工程係還具有:將前記已拾取之晶粒載置於中間平台的工程;前記(e)工程係還具有:從前記中間平台拾取前記晶粒的工程。 The method for manufacturing a semiconductor device according to claim 17, wherein the preamble (d) engineering system further includes: a process of placing the crystal grains picked up in the preamble on an intermediate platform; the preamble (e) engineering system further includes: the preliminary intermediate platform The process of picking the previous grain.
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7102305B2 (en) * 2018-09-19 2022-07-19 ファスフォードテクノロジ株式会社 Manufacturing method of die bonding equipment and semiconductor equipment
JP7217605B2 (en) * 2018-09-21 2023-02-03 ファスフォードテクノロジ株式会社 Semiconductor manufacturing equipment, push-up jig, and semiconductor device manufacturing method
KR102656718B1 (en) * 2018-11-05 2024-04-12 세메스 주식회사 Die ejecting apparatus
JP7237655B2 (en) * 2019-03-01 2023-03-13 ファスフォードテクノロジ株式会社 Semiconductor manufacturing equipment and semiconductor device manufacturing method
JP7274902B2 (en) 2019-03-25 2023-05-17 ファスフォードテクノロジ株式会社 Semiconductor manufacturing equipment and semiconductor device manufacturing method
JP7408434B2 (en) 2020-02-25 2024-01-05 ファスフォードテクノロジ株式会社 Motor control device, die bonding device, and semiconductor device manufacturing method
JP7408455B2 (en) 2020-03-25 2024-01-05 ファスフォードテクノロジ株式会社 Die bonding equipment and semiconductor device manufacturing method
JP7039675B2 (en) * 2020-11-18 2022-03-22 ファスフォードテクノロジ株式会社 Semiconductor manufacturing equipment and methods for manufacturing semiconductor equipment
JP2023064405A (en) 2021-10-26 2023-05-11 三菱電機株式会社 Semiconductor manufacturing device and method for manufacturing semiconductor device
KR102612348B1 (en) * 2021-11-17 2023-12-11 세메스 주식회사 Die bonding equipment

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3245961B2 (en) * 1992-05-21 2002-01-15 ソニー株式会社 Chip pushing device
JP2003289084A (en) * 2002-03-28 2003-10-10 Sanken Electric Co Ltd Semiconductor device pick-up apparatus
JP4574251B2 (en) * 2003-09-17 2010-11-04 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
KR20070120319A (en) 2006-06-19 2007-12-24 삼성전자주식회사 Apparatus having a pair of ejectors for detaching semiconductor chips and method of detaching semiconductor chips using the apparatus
JP5123357B2 (en) 2010-06-17 2013-01-23 株式会社日立ハイテクインスツルメンツ Die bonder and pickup device
JP2012059829A (en) 2010-09-07 2012-03-22 Elpida Memory Inc Peeling device for semiconductor chip, die-bonding apparatus, peeling method for semiconductor chip, and method of manufacturing semiconductor device
JP5805411B2 (en) 2011-03-23 2015-11-04 ファスフォードテクノロジ株式会社 Die bonder pickup method and die bonder
JP2013033850A (en) * 2011-08-02 2013-02-14 Shibaura Mechatronics Corp Pickup device and pickup method for semiconductor chip
JP5989313B2 (en) * 2011-09-15 2016-09-07 ファスフォードテクノロジ株式会社 Die bonder and bonding method
JP2013065757A (en) * 2011-09-20 2013-04-11 Toshiba Corp Pickup method of semiconductor chip and pickup device of semiconductor chip
JP2013171996A (en) * 2012-02-21 2013-09-02 Shibaura Mechatronics Corp Pickup device and pickup method for semiconductor chip
CH706280B1 (en) * 2012-03-30 2016-03-15 Esec Ag A method for detaching a semiconductor chip from a foil.
KR101471715B1 (en) * 2012-10-30 2014-12-10 세메스 주식회사 Die ejecting apparatus
JP5717910B1 (en) * 2014-02-26 2015-05-13 株式会社新川 Semiconductor die pickup apparatus and pickup method
JP6400938B2 (en) * 2014-04-30 2018-10-03 ファスフォードテクノロジ株式会社 Die bonder and bonding method
SG10201403372SA (en) * 2014-06-18 2016-01-28 Mfg Integration Technology Ltd System and method for peeling a semiconductor chip from a tape using a multistage ejector
JP6391378B2 (en) * 2014-09-10 2018-09-19 ファスフォードテクノロジ株式会社 Die bonder and bonding method
JP6324857B2 (en) * 2014-09-18 2018-05-16 ファスフォードテクノロジ株式会社 Die bonder, bonding method and pickup device
JP6367671B2 (en) 2014-09-29 2018-08-01 ファスフォードテクノロジ株式会社 Semiconductor or electronic component mounting apparatus and semiconductor or electronic component mounting method

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