TW201806088A - Airtight package manufacturing method and airtight package - Google Patents
Airtight package manufacturing method and airtight package Download PDFInfo
- Publication number
- TW201806088A TW201806088A TW106106710A TW106106710A TW201806088A TW 201806088 A TW201806088 A TW 201806088A TW 106106710 A TW106106710 A TW 106106710A TW 106106710 A TW106106710 A TW 106106710A TW 201806088 A TW201806088 A TW 201806088A
- Authority
- TW
- Taiwan
- Prior art keywords
- laser light
- container
- glass cover
- material layer
- sealing material
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 113
- 239000003566 sealing material Substances 0.000 claims abstract description 47
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 8
- 239000002241 glass-ceramic Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000008642 heat stress Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 9
- 230000008646 thermal stress Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052642 spodumene Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Joining Of Glass To Other Materials (AREA)
- Led Device Packages (AREA)
Abstract
Description
本發明係關於一種用以搭載元件並密封之氣密封裝之製造方法及氣密封裝。The invention relates to a method for manufacturing a hermetically sealed device for mounting components and sealing, and a hermetically sealed device.
先前，為了搭載並密封LED等元件而使用氣密封裝。此種氣密封裝係藉由將可搭載元件之容器與用以將容器內密封之罩蓋構件接合而構成。 於下述專利文獻1中揭示有玻璃陶瓷基板與玻璃蓋經由密封材料接合而成之氣密封裝。於專利文獻1中，作為上述密封材料使用包含低熔點玻璃之玻璃料。又，於專利文獻1中，藉由燒成上述玻璃料並使之熔融而將玻璃陶瓷基板與玻璃蓋接合。 然而，於搭載耐熱性較低之元件之情形時，若如專利文獻1般燒成玻璃料並使之熔融，則有因燒成時之加熱導致元件特性熱劣化之虞。作為消除該情況之方法，考慮藉由對玻璃料照射雷射局部地進行加熱而將玻璃料熔融之方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2014-236202號公報Conventionally, hermetic packaging has been used to mount and seal components such as LEDs. This hermetically sealed package is constituted by joining a container capable of mounting a component and a cover member for sealing the inside of the container. The following patent document 1 discloses a hermetically sealed package in which a glass ceramic substrate and a glass cover are joined via a sealing material. In Patent Document 1, a glass frit containing a low-melting glass is used as the sealing material. Further, in Patent Document 1, the glass ceramic substrate and the glass cover are bonded by firing and melting the glass frit. However, when a device having low heat resistance is mounted, if a glass frit is fired and melted like in Patent Document 1, there is a possibility that the device characteristics may be thermally deteriorated by heating during firing. As a method of eliminating this, a method of melting the glass frit by locally heating the glass frit with a laser is considered. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2014-236202
[發明所欲解決之問題] 藉由採用利用上述雷射照射之密封，可防止所搭載之元件之熱劣化。又，由於構成氣密封裝之所有材料包含無機材料，故而亦可有效地防止因氧及水等之透過導致之劣化。 另一方面，為了一面維持氣密性，一面提高封裝強度，有欲增大玻璃蓋之厚度之要求。然而，本發明者等人發現存在如下問題，即，若增大玻璃蓋之厚度，則因利用雷射照射之加熱，玻璃蓋內部之溫度差變大，因熱應力而導致玻璃蓋產生龜裂。 本發明之目的在於提供一種可減少藉由雷射光之照射而於玻璃蓋內部產生之熱應力從而可抑制於玻璃蓋產生龜裂等之氣密封裝之製造方法及氣密封裝。 [解決問題之技術手段] 本發明之製造方法之特徵在於：其係製造利用玻璃蓋將內部搭載有元件之容器密封之氣密封裝者，且包括：將元件搭載於容器之內部之步驟；於容器之密封部與玻璃蓋之間配置密封材料層，並將玻璃蓋放置於容器上之步驟；將用於加熱熔融密封材料層之第1雷射光通過玻璃蓋照射至密封材料層而加熱熔融密封材料層之步驟；及將用以加熱玻璃蓋之第2雷射光照射至玻璃蓋而加熱玻璃蓋之步驟；且第1雷射光與第2雷射光具有互不相同之波長，且以降低因第1雷射光之照射而產生之玻璃蓋內部之溫度差之方式照射第2雷射光。 於本發明中，較佳為以玻璃蓋中之第1雷射光之照射區域與第2雷射光之照射區域於至少一部分重疊之方式同時照射第1雷射光及第2雷射光。 較佳為第1雷射光具有600～1600 nm之範圍內之波長。 較佳為第2雷射光具有3000 nm以上之波長。 較佳為容器包含陶瓷或玻璃陶瓷。 較佳為密封材料層由玻璃料形成。 本發明之氣密封裝之特徵在於具備：元件，其使用上限溫度為350℃以下；容器，其將元件搭載於內部；玻璃蓋，其具有超過0.2 mm之厚度，且將容器密封；及密封材料層，其配置於容器之密封部與玻璃蓋之間。 作為搭載於本發明之氣密封裝之元件可列舉MEMS (microelectromechanical system，微機電系統)及深紫外線LED(Light Emitting Diode，發光二極體)。 容器例如可由氧化鋁、玻璃陶瓷、或氮化鋁形成。 [發明之效果] 根據本發明之製造方法，可減少藉由雷射光之照射而於玻璃蓋內部產生之熱應力，從而抑制於玻璃蓋產生龜裂等。 本發明之氣密封裝具有優異之氣密性及封裝強度。[Problems to be Solved by the Invention] By adopting a seal using the above-mentioned laser irradiation, it is possible to prevent thermal degradation of the mounted device. In addition, since all materials constituting the hermetic package include an inorganic material, it is also possible to effectively prevent deterioration due to the permeation of oxygen and water. On the other hand, in order to maintain the airtightness and increase the packaging strength, there is a demand for increasing the thickness of the glass cover. However, the present inventors have found that if the thickness of the glass cover is increased, the temperature difference inside the glass cover becomes large due to heating by laser irradiation, and the glass cover is cracked due to thermal stress. . An object of the present invention is to provide a hermetically sealed manufacturing method and hermetically sealed package that can reduce thermal stress generated inside a glass cover by irradiation of laser light, and can suppress cracks and the like in the glass cover. [Technical means to solve the problem] The manufacturing method of the present invention is characterized in that it manufactures a hermetically sealed container that uses a glass lid to seal a container in which components are mounted inside, and includes the step of mounting the component in the container; A step of disposing a sealing material layer between the sealing portion of the container and the glass cover, and placing the glass cover on the container; irradiating the first laser light for heating and melting the sealing material layer through the glass cover to the sealing material layer to heat-melt and seal A material layer step; and a step of heating the glass cover by irradiating the second laser light to heat the glass cover with the glass cover; and the first laser light and the second laser light have different wavelengths from each other, and 1 The second laser light is irradiated by the temperature difference inside the glass cover caused by the irradiation of the laser light. In the present invention, it is preferable to irradiate the first laser light and the second laser light at the same time such that the irradiation area of the first laser light and the irradiation area of the second laser light in the glass cover overlap at least partially. It is preferable that the first laser light has a wavelength in a range of 600 to 1600 nm. Preferably, the second laser light has a wavelength of 3000 nm or more. Preferably, the container contains ceramic or glass ceramic. The sealing material layer is preferably formed of a glass frit. The hermetically sealed package of the present invention is characterized by comprising: an element whose upper limit temperature is 350 ° C or lower; a container which mounts the element inside; a glass cover which has a thickness exceeding 0.2 mm and which seals the container; and a sealing material Layer, which is arranged between the sealing portion of the container and the glass lid. Examples of the device mounted in the hermetically sealed package of the present invention include a MEMS (microelectromechanical system) and a deep ultraviolet LED (Light Emitting Diode). The container may be formed of, for example, alumina, glass ceramic, or aluminum nitride. [Effects of the Invention] According to the manufacturing method of the present invention, the thermal stress generated in the glass cover by the irradiation of laser light can be reduced, and cracks in the glass cover can be suppressed. The hermetically sealed package of the present invention has excellent air tightness and packaging strength.
以下，對較佳之實施形態進行說明。但是，以下實施形態僅為例示，本發明並不限定於以下之實施形態。又，於各圖式中，有時實質上具有相同功能之構件係利用相同之符號進行參照。 圖1係表示本發明之一實施形態之氣密封裝之模式性剖視圖。如圖1所示，本實施形態之氣密封裝1具備：容器2，其將元件5搭載於內部；玻璃蓋3，其將容器2密封；及密封材料層4，其配置於容器2之密封部2a與玻璃蓋3之間。藉由利用密封材料層4將容器2之密封部2a與玻璃蓋3接合，容器2由玻璃蓋3密封而形成氣密之構造。 容器2例如包含陶瓷、玻璃陶瓷等。作為陶瓷可列舉氧化鋁、氮化鋁、氧化鋯、富鋁紅柱石等。作為玻璃陶瓷可列舉LTCC(Low Temperature Co-fired Ceramics，低溫共燒陶瓷)等。作為LTCC之具體例可列舉氧化鈦或氧化鈮等無機粉末與玻璃粉末之燒結體等。 作為構成玻璃蓋3之玻璃，例如可使用SiO2 -B2 O3 -RO(R為Mg、Ca、Sr或Ba)系玻璃、SiO2 -B2 O3 -R'2 O(R'為Li、Na或Ka)系玻璃、SiO2 -B2 O3 -RO-R'2 O系玻璃、SnO-P2 O5 系玻璃、TeO2 系玻璃或Bi2 O3 系玻璃等。 玻璃蓋3之厚度於本發明中並不受特別限定，一般而言係使用0.01 mm～2.0 mm之範圍內者。若玻璃蓋3之厚度超過0.2 mm，則雷射照射時之熱應力變大，而容易產生龜裂。因此，若玻璃蓋3之厚度超過0.2 mm，則更容易發揮本發明之效果。玻璃蓋3之厚度進而較佳為0.3 mm以上，更佳為0.4 mm以上。 作為用以形成密封材料層4之密封材料，較佳為使用包含低熔點玻璃粉末之玻璃料。於包含低熔點玻璃粉末之情形時，能以更低溫度使密封材料熔融，從而可更進一步抑制元件之熱劣化。作為低熔點玻璃粉末，例如可使用Bi2 O3 系玻璃粉末、SnO-P2 O5 系玻璃粉末、V2 O5 -TeO2 系玻璃粉末等。再者，為了提高雷射光之吸收，亦可於玻璃中包含選自CuO、Cr2 O3 、Fe2 O3 、MnO2 等之至少1種顏料。又，密封材料中除了上述低熔點玻璃粉末以外，亦可包含低膨脹耐火性填料或雷射光吸收材料等。作為低膨脹耐火性填料例如可列舉堇青石、矽鋅礦、氧化鋁、磷酸鋯系化合物、鋯英石、氧化鋯、氧化錫、石英玻璃、β-石英固溶體、β-鋰霞石、鋰輝石。又，作為雷射光吸收材料例如可列舉選自Fe、Mn、Cu等之至少1種金屬或包含該金屬之氧化物等化合物。 元件5於本發明中並不受特別限定，根據本發明之製造方法即便為耐熱性較低之元件，亦可抑制封裝時之熱劣化，因此，於利用使用上限溫度較低之元件之情形時，更易於發揮本發明之效果。又，根據本發明，即便為了提高封裝1之強度而增大玻璃蓋3之厚度，亦可製成氣密性較高之封裝。因此，於使用要求較高之強度及氣密性之元件之情形時，更易於發揮本發明之效果。因此，於利用使用上限溫度較低且要求較高之氣密性之元件作為元件5之情形時，更易於發揮本發明之效果。作為此種元件可列舉MEMS(Micro Electro Mechanical Systems，微機電系統)、深紫外線LED(Light Emitting Diode，發光二極體)等。 因此，作為使用上限溫度為350℃以下之元件可列舉上述MEMS及深紫外線LED。再者，元件之使用上限溫度係針對每一元件作為規格而規定之溫度，且係亦稱為動作上限溫度、最高使用溫度等之溫度。 然而，元件5並不限定於上述者，亦可使用上述以外之LED、LD(Laser Diode，雷射二極體)等發光元件、CCD(Charge Coupled Device，電荷耦合器件)等受光元件或其他元件。 圖2係用以說明製造圖1所示之氣密封裝之步驟之模式性剖視圖。於本實施形態之製造方法中，首先，如圖2(a)所示，於容器2之內部搭載元件5。 其次，如圖2(b)所示，於容器2之密封部2a上塗佈密封材料而形成密封材料層4。其次，如圖2(c)所示，於形成有密封材料層4之密封部2a上放置玻璃蓋3。藉此，可於容器2之密封部2a與玻璃蓋3之間配置密封材料層4。再者，於本實施形態中，於容器2側塗佈有密封材料，但亦可於玻璃蓋3側塗佈密封材料。又，亦可於容器2側與玻璃蓋3側之兩者塗佈密封材料。其次，如參照圖3而於以下所說明般，自上方通過玻璃蓋3照射雷射光而加熱熔融密封材料層4。 圖3係表示於製造本實施形態之氣密封裝之步驟中照射第1雷射光及第2雷射光之狀態之模式性放大剖視圖。 如圖3所示，將用以加熱熔融密封材料層4之第1雷射光11通過玻璃蓋3照射至密封材料層4。如圖3所示，第1雷射光11係自正上方照射。藉由第1雷射光11之照射而將密封材料層4加熱熔融。又，同時將用以加熱玻璃蓋3之第2雷射光12照射至玻璃蓋3。如圖3所示，第2雷射光12自上方傾斜方向照射。藉由第2雷射光12之照射，而對玻璃蓋3進行加熱。 第1雷射光11係加熱密封材料層4之雷射光，第2雷射光12係加熱玻璃蓋3之雷射光，因此，第1雷射光11與第2雷射光12具有互不相同之波長。即，第1雷射光11之波長較佳為透過玻璃蓋3而密封材料層4具有較大之吸收之波長，第2雷射光11之波長較佳為玻璃蓋3具有較大之吸收之波長。 較佳為第1雷射光11之波長為600～1600 nm之範圍內。藉由設為此種波長之範圍內，可高效率地加熱密封材料層4。作為出射第1雷射光11之光源較佳地使用半導體雷射。 第2雷射光12之波長較佳為3000 nm以上，進而較佳為5000～11000 nm之範圍內。藉由設為此種波長之範圍內，可高效率地對玻璃蓋3整體均勻地進行加熱。作為出射第2雷射光12之光源較佳地使用二氧化碳氣體雷射。 藉由將第1雷射光11照射至密封材料層4，而加熱密封材料層4。因此，與密封材料層4接觸之玻璃蓋3之部分被局部地加熱為高溫。因此，密封材料層4附近之玻璃蓋3之部分溫度上升。另一方面，遠離密封材料層4之玻璃蓋3之部分不易被加熱。因此，藉由第1雷射光11之照射，於玻璃蓋3內部產生溫度差。玻璃蓋3之厚度越大則該溫度差越大。 另一方面，於本實施形態中，藉由將第2雷射光12照射至玻璃蓋3，而加熱玻璃蓋3。因此，藉由第2雷射光12之照射而減少因第1雷射光11之照射而產生之玻璃蓋3內部之溫度差。由於可減少玻璃蓋3內部之溫度差，故而可減少於玻璃蓋3內部產生之熱應力，從而可抑制於玻璃蓋3產生龜裂等。 因此，根據本實施形態，即便使用厚度較大之玻璃蓋3，亦可減少於玻璃蓋3內部產生之熱應力，從而可抑制於玻璃蓋3產生龜裂等。 於圖3所示之實施形態中，自正上方照射第1雷射光11，自上方傾斜方向照射第2雷射光12，但本發明並不限定於此。可自正上方照射第1雷射光11及第2雷射光12之兩者，亦可自上方傾斜方向照射兩者。又，亦可自上方傾斜方向照射第1雷射光11，且自正上方照射第2雷射光12。第1雷射光11及第2雷射光12之掃描及照射方向可使用檢流掃描儀等進行控制。 圖4係表示第1實施形態中之第1雷射光及第2雷射光之照射區域之模式性俯視圖。於本實施形態中，第1雷射光之照射區域21整體包含於第2雷射光之照射區域22內，第1雷射光之照射區域21與第2雷射光之照射區域22完全重疊。於該狀態下，使第1雷射光11及第2雷射光12於箭頭A方向掃描，並於密封材料層4及玻璃蓋3上環繞。藉此，加熱熔融密封材料層4而將容器2之密封部2a與玻璃蓋3接合。 圖5係表示第2實施形態中之第1雷射光及第2雷射光之照射區域之模式性俯視圖。於本實施形態中，第2雷射光之照射區域22較第1雷射光之照射區域21更於箭頭A方向先行。因此，第1雷射光之照射區域21與第2雷射光之照射區域22成為一部分重疊之狀態。於該狀態下，使第1雷射光11及第2雷射光12於箭頭A方向掃描並環繞，將密封材料層4加熱熔融而將容器2之密封部2a與玻璃蓋3接合。 圖6係表示第3實施形態中之第1雷射光及第2雷射光之照射區域之模式性俯視圖。於本實施形態中，第1雷射光之照射區域21與第2雷射光之照射區域22未重疊而第2雷射光之照射區域22較第1雷射光之照射區域21更於箭頭A方向先行掃描。於該狀態下，使第1雷射光11及第2雷射光12於箭頭A方向掃描並環繞，將密封材料層4加熱熔融而將容器2之密封部2a與玻璃蓋3接合。 於本發明中，較佳為如圖4及圖5所示般，以玻璃蓋3中之第1雷射光之照射區域21與第2雷射光之照射區域22於至少一部分重疊之方式，同時照射第1雷射光11及第2雷射光12。其原因在於，藉此，可更有效地減少玻璃蓋3內部之溫度差。 於第1雷射光11及第2雷射光12中之一者較另一者先行被掃描之情形時，較佳為如圖5及圖6所示般使第2雷射光12先行。其原因在於：若首先僅照射第1雷射光11，則有於玻璃蓋3內部產生與不照射第2雷射光12時同樣之溫度差之情形。因此，於本發明中，較佳為對玻璃蓋3之被照射區域照射第2雷射光12之同時照射第1雷射光11或於照射第2雷射光12之後照射第1雷射光11。 於上述實施形態中，示出了第1雷射光之照射區域21較第2雷射光之照射區域22小之示例，但本發明並不限定於此，可為第1雷射光之照射區域21與第2雷射光之照射區域22相互為相同程度之大小，亦可為第1雷射光之照射區域21較第2雷射光之照射區域22大。Hereinafter, a preferred embodiment will be described. However, the following embodiments are merely examples, and the present invention is not limited to the following embodiments. In each drawing, components having substantially the same function may be referred to by the same reference numerals. FIG. 1 is a schematic cross-sectional view showing a hermetically sealed package according to an embodiment of the present invention. As shown in FIG. 1, the hermetically sealed device 1 of the present embodiment includes a container 2 in which the element 5 is mounted, a glass cover 3 in which the container 2 is sealed, and a sealing material layer 4 which is disposed in the container 2 and sealed. Between the part 2a and the glass cover 3. The sealing portion 2a of the container 2 is joined to the glass cover 3 by the sealing material layer 4, and the container 2 is sealed by the glass cover 3 to form an airtight structure. The container 2 contains ceramics, glass ceramics, and the like, for example. Examples of the ceramic include alumina, aluminum nitride, zirconia, and mullite. Examples of glass ceramics include LTCC (Low Temperature Co-fired Ceramics). Specific examples of the LTCC include sintered bodies of inorganic powders such as titanium oxide and niobium oxide, and glass powders. As the glass constituting the glass cover 3, for example, SiO 2 -B 2 O 3 -RO (R is Mg, Ca, Sr, or Ba) -based glass, and SiO 2 -B 2 O 3 -R ' 2 O (R' is Li, Na or Ka) based glass, SiO 2 -B 2 O 3 -RO-R ' 2 O based glass, SnO-P 2 O 5 based glass, TeO 2 based glass, or Bi 2 O 3 based glass, and the like. The thickness of the glass cover 3 is not particularly limited in the present invention, and generally, a thickness in the range of 0.01 mm to 2.0 mm is used. If the thickness of the glass cover 3 exceeds 0.2 mm, the thermal stress at the time of laser irradiation becomes large, and cracks easily occur. Therefore, if the thickness of the glass cover 3 exceeds 0.2 mm, the effect of the present invention is more easily exhibited. The thickness of the glass cover 3 is more preferably 0.3 mm or more, and more preferably 0.4 mm or more. As the sealing material for forming the sealing material layer 4, a glass frit containing a low melting glass powder is preferably used. When a low-melting-point glass powder is contained, the sealing material can be melted at a lower temperature, so that thermal degradation of the device can be further suppressed. Examples of the low-melting-point glass powder include a Bi 2 O 3 -based glass powder, a SnO-P 2 O 5 -based glass powder, and a V 2 O 5 -TeO 2 -based glass powder. Furthermore, in order to improve the absorption of laser light, at least one pigment selected from CuO, Cr 2 O 3 , Fe 2 O 3 , MnO 2 and the like may be contained in the glass. The sealing material may contain a low-expansion refractory filler, a laser light absorbing material, and the like in addition to the low-melting glass powder. Examples of the low-expansion refractory filler include cordierite, wurtzite, alumina, zirconium phosphate-based compounds, zircon, zirconia, tin oxide, quartz glass, β-quartz solid solution, β-eucryptite, Spodumene. Examples of the laser light absorbing material include at least one metal selected from the group consisting of Fe, Mn, Cu, and the like, and compounds including oxides of the metal. The element 5 is not particularly limited in the present invention. Even if the manufacturing method according to the present invention is a low-heat-resistant element, thermal degradation during packaging can be suppressed. Therefore, when using a component with a lower upper limit temperature, , It is easier to exert the effect of the present invention. In addition, according to the present invention, even if the thickness of the glass cover 3 is increased in order to increase the strength of the package 1, a package having high airtightness can be made. Therefore, in the case of using a component requiring higher strength and air tightness, it is easier to exert the effect of the present invention. Therefore, in the case where an element with a lower upper limit temperature and higher airtightness is used as the element 5, it is easier to exert the effect of the present invention. Examples of such devices include MEMS (Micro Electro Mechanical Systems), and deep ultraviolet LEDs (Light Emitting Diodes). Therefore, as the device whose upper limit temperature is 350 ° C. or lower, the above-mentioned MEMS and deep ultraviolet LED are mentioned. In addition, the upper limit temperature of use of a component is a temperature prescribed for each component as a specification, and is a temperature also referred to as an upper limit operation temperature, a maximum use temperature, and the like. However, the element 5 is not limited to the above, and light emitting elements such as LEDs, LDs (laser diodes), light receiving elements such as CCD (Charge Coupled Device), or other elements may be used. . FIG. 2 is a schematic cross-sectional view for explaining the steps of manufacturing the air-tight package shown in FIG. 1. FIG. In the manufacturing method of this embodiment, first, as shown in FIG. 2 (a), an element 5 is mounted inside the container 2. Next, as shown in FIG. 2 (b), a sealing material is applied to the sealing portion 2 a of the container 2 to form a sealing material layer 4. Next, as shown in FIG. 2 (c), a glass cover 3 is placed on the sealing portion 2a on which the sealing material layer 4 is formed. Thereby, a sealing material layer 4 can be arranged between the sealing portion 2 a of the container 2 and the glass cover 3. In the present embodiment, the sealing material is applied to the container 2 side, but the sealing material may be applied to the glass lid 3 side. Moreover, you may apply a sealing material to both the container 2 side and the glass lid 3 side. Next, as described below with reference to FIG. 3, the sealing material layer 4 is heated and melted by irradiating laser light through the glass cover 3 from above. FIG. 3 is a schematic enlarged cross-sectional view showing a state where the first laser light and the second laser light are irradiated in the step of manufacturing the hermetically sealed package of the embodiment. As shown in FIG. 3, the first laser light 11 for heating and melting the sealing material layer 4 is irradiated to the sealing material layer 4 through the glass cover 3. As shown in FIG. 3, the first laser light 11 is irradiated from directly above. The sealing material layer 4 is heated and fused by irradiation with the first laser light 11. At the same time, the second laser light 12 for heating the glass cover 3 is irradiated onto the glass cover 3 at the same time. As shown in FIG. 3, the second laser light 12 is irradiated from an upward oblique direction. The glass cover 3 is heated by the irradiation of the second laser light 12. The first laser light 11 is a laser light that heats the sealing material layer 4, and the second laser light 12 is a laser light that heats the glass cover 3. Therefore, the first laser light 11 and the second laser light 12 have different wavelengths. That is, the wavelength of the first laser light 11 is preferably a wavelength that passes through the glass cover 3 and the sealing material layer 4 has a large absorption, and the wavelength of the second laser light 11 is preferably a wavelength that the glass cover 3 has a large absorption. The wavelength of the first laser light 11 is preferably in a range of 600 to 1600 nm. By setting it as such a wavelength range, the sealing material layer 4 can be heated efficiently. A semiconductor laser is preferably used as a light source for emitting the first laser light 11. The wavelength of the second laser light 12 is preferably 3000 nm or more, and more preferably in a range of 5000 to 11000 nm. By setting it as such a wavelength range, the whole glass cover 3 can be heated uniformly with high efficiency. As a light source emitting the second laser light 12, a carbon dioxide gas laser is preferably used. The sealing material layer 4 is heated by irradiating the first laser light 11 to the sealing material layer 4. Therefore, the portion of the glass cover 3 that is in contact with the sealing material layer 4 is locally heated to a high temperature. Therefore, the temperature of a part of the glass cover 3 near the sealing material layer 4 rises. On the other hand, the portion of the glass cover 3 far from the sealing material layer 4 is not easily heated. Therefore, a temperature difference occurs inside the glass cover 3 by the irradiation of the first laser light 11. The larger the thickness of the glass cover 3, the larger the temperature difference. On the other hand, in this embodiment, the glass cover 3 is heated by irradiating the second laser light 12 to the glass cover 3. Therefore, the temperature difference inside the glass cover 3 caused by the irradiation of the first laser light 11 is reduced by the irradiation of the second laser light 12. Since the temperature difference inside the glass cover 3 can be reduced, the thermal stress generated inside the glass cover 3 can be reduced, and the occurrence of cracks and the like in the glass cover 3 can be suppressed. Therefore, according to this embodiment, even if the glass cover 3 having a large thickness is used, the thermal stress generated inside the glass cover 3 can be reduced, and cracks and the like in the glass cover 3 can be suppressed. In the embodiment shown in FIG. 3, the first laser light 11 is irradiated from directly above, and the second laser light 12 is irradiated from above. However, the present invention is not limited to this. Both the first laser light 11 and the second laser light 12 may be irradiated from directly above, and both may be irradiated from an oblique direction from above. In addition, the first laser light 11 may be radiated from an upward oblique direction, and the second laser light 12 may be radiated from directly above. The scanning and irradiation directions of the first laser light 11 and the second laser light 12 can be controlled using a galvanometer or the like. FIG. 4 is a schematic plan view showing the irradiation areas of the first laser light and the second laser light in the first embodiment. In this embodiment, the entire irradiation area 21 of the first laser light is included in the irradiation area 22 of the second laser light, and the irradiation area 21 of the first laser light and the irradiation area 22 of the second laser light completely overlap. In this state, the first laser light 11 and the second laser light 12 are scanned in the direction of the arrow A, and surround the sealing material layer 4 and the glass cover 3. Thereby, the sealing material layer 4 is heated and fused, and the sealing part 2a of the container 2 and the glass lid 3 are joined. FIG. 5 is a schematic plan view showing the irradiation areas of the first laser light and the second laser light in the second embodiment. In this embodiment, the irradiation area 22 of the second laser light precedes the direction of the arrow A more than the irradiation area 21 of the first laser light. Therefore, the irradiation area 21 of the first laser light and the irradiation area 22 of the second laser light are partially overlapped. In this state, the first laser light 11 and the second laser light 12 are scanned and circled in the direction of the arrow A, the sealing material layer 4 is heated and fused, and the sealing portion 2a of the container 2 and the glass cover 3 are joined. FIG. 6 is a schematic plan view showing the irradiation areas of the first laser light and the second laser light in the third embodiment. In this embodiment, the first laser light irradiated area 21 and the second laser light irradiated area 22 do not overlap, and the second laser light irradiated area 22 is scanned ahead of the first laser light irradiated area 21 in the direction of arrow A . In this state, the first laser light 11 and the second laser light 12 are scanned and circled in the direction of the arrow A, the sealing material layer 4 is heated and fused, and the sealing portion 2a of the container 2 and the glass cover 3 are joined. In the present invention, as shown in FIG. 4 and FIG. 5, it is preferable that the first laser light irradiation area 21 and the second laser light irradiation area 22 in the glass cover 3 overlap at least partly and simultaneously irradiate as shown in FIG. 4 and FIG. The first laser light 11 and the second laser light 12. The reason is that by this, the temperature difference inside the glass cover 3 can be reduced more effectively. In a case where one of the first laser light 11 and the second laser light 12 is scanned before the other, it is preferable that the second laser light 12 is advanced as shown in FIGS. 5 and 6. The reason is that if only the first laser light 11 is irradiated first, the same temperature difference may occur in the glass cover 3 as when the second laser light 12 is not irradiated. Therefore, in the present invention, it is preferable to irradiate the first laser light 11 while the second laser light 12 is irradiated to the irradiated area of the glass cover 3 or irradiate the first laser light 11 after the second laser light 12 is irradiated. In the above embodiment, the example in which the irradiation area 21 of the first laser light is smaller than the irradiation area 22 of the second laser light is shown. However, the present invention is not limited to this. The irradiation area 21 of the first laser light may be The irradiated area 22 of the second laser light is the same size as each other, and the irradiated area 21 of the first laser light may be larger than the irradiated area 22 of the second laser light.
1‧‧‧氣密封裝
2‧‧‧容器
2a‧‧‧密封部
3‧‧‧玻璃蓋
4‧‧‧密封材料層
5‧‧‧元件
11‧‧‧第1雷射光
12‧‧‧第2雷射光
21‧‧‧第1雷射光之照射區域
22‧‧‧第2雷射光之照射區域
A‧‧‧掃描方向1‧‧‧ hermetically sealed
2‧‧‧ container
2a‧‧‧Sealing Department
3‧‧‧ glass cover
4‧‧‧sealing material layer
5‧‧‧ components
11‧‧‧ 1st laser light
12‧‧‧ 2nd laser light
21‧‧‧The first laser light irradiation area
22‧‧‧ 2nd laser light irradiation area
A‧‧‧Scanning direction
圖1係表示本發明之一實施形態之氣密封裝之模式性剖視圖。 圖2(a)～(c)係用以說明製造圖1所示之氣密封裝之步驟之模式性剖視圖。 圖3係表示於製造圖1所示之氣密封裝之步驟中照射第1雷射光及第2雷射光之狀態之模式性放大剖視圖。 圖4係表示第1實施形態中之第1雷射光及第2雷射光之照射區域之模式性俯視圖。 圖5係表示第2實施形態中之第1雷射光及第2雷射光之照射區域之模式性俯視圖。 圖6係表示第3實施形態中之第1雷射光及第2雷射光之照射區域之模式性俯視圖。FIG. 1 is a schematic cross-sectional view showing a hermetically sealed package according to an embodiment of the present invention. 2 (a)-(c) are schematic cross-sectional views for explaining the steps of manufacturing the air-tight package shown in FIG. FIG. 3 is a schematic enlarged cross-sectional view showing a state where the first laser light and the second laser light are irradiated in the step of manufacturing the hermetically sealed package shown in FIG. 1. FIG. FIG. 4 is a schematic plan view showing the irradiation areas of the first laser light and the second laser light in the first embodiment. FIG. 5 is a schematic plan view showing the irradiation areas of the first laser light and the second laser light in the second embodiment. FIG. 6 is a schematic plan view showing the irradiation areas of the first laser light and the second laser light in the third embodiment.
2‧‧‧容器 2‧‧‧ container
3‧‧‧玻璃蓋 3‧‧‧ glass cover
4‧‧‧密封材料層 4‧‧‧sealing material layer
11‧‧‧第1雷射光 11‧‧‧ 1st laser light
12‧‧‧第2雷射光 12‧‧‧ 2nd laser light
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-096814 | 2016-05-13 | ||
| JP2016096814A JP2017204599A (en) | 2016-05-13 | 2016-05-13 | Method for manufacturing airtight package, and airtight package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201806088A true TW201806088A (en) | 2018-02-16 |
Family
ID=60266913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106106710A TW201806088A (en) | 2016-05-13 | 2017-03-01 | Airtight package manufacturing method and airtight package |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2017204599A (en) |
| TW (1) | TW201806088A (en) |
| WO (1) | WO2017195424A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114315174A (en) * | 2021-12-28 | 2022-04-12 | 上海菲利华石创科技有限公司 | Welding method for thickened opaque quartz glass plate |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484645A (en) * | 1987-09-26 | 1989-03-29 | Nec Corp | Method for encapsulating semiconductor element by seam weld |
| JPH08204060A (en) * | 1995-01-24 | 1996-08-09 | Toshiba Corp | Semiconductor device |
| JP2007059746A (en) * | 2005-08-26 | 2007-03-08 | Kyocera Corp | Electronic component storage package and electronic apparatus |
| EP2340554B1 (en) * | 2008-09-18 | 2017-05-10 | Imec | Methods and systems for material bonding |
| JP5183424B2 (en) * | 2008-10-30 | 2013-04-17 | 京セラ株式会社 | Package manufacturing method |
| KR101206608B1 (en) * | 2009-11-17 | 2012-11-29 | (주)엘지하우시스 | Laser sealing apparatus for glass substrate |
| JP2012252828A (en) * | 2011-06-01 | 2012-12-20 | Canon Inc | Method for manufacturing assembly |
-
2016
- 2016-05-13 JP JP2016096814A patent/JP2017204599A/en active Pending
-
2017
- 2017-02-14 WO PCT/JP2017/005229 patent/WO2017195424A1/en active Application Filing
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114315174A (en) * | 2021-12-28 | 2022-04-12 | 上海菲利华石创科技有限公司 | Welding method for thickened opaque quartz glass plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017204599A (en) | 2017-11-16 |
| WO2017195424A1 (en) | 2017-11-16 |
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