TW201804557A - 使用含金屬層以降低封裝形成時之載體衝擊 - Google Patents

使用含金屬層以降低封裝形成時之載體衝擊 Download PDF

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TW201804557A
TW201804557A TW106120924A TW106120924A TW201804557A TW 201804557 A TW201804557 A TW 201804557A TW 106120924 A TW106120924 A TW 106120924A TW 106120924 A TW106120924 A TW 106120924A TW 201804557 A TW201804557 A TW 201804557A
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Taiwan
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metal
layer
dielectric layer
forming
radiation
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TW106120924A
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TWI640055B (zh
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鄭心圃
劉獻文
林儀柔
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台灣積體電路製造股份有限公司
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Abstract

本發明實施例係關於一種方法，其包含在一可輻射脫結塗層上方形成一介電層。該可輻射脫結塗層在一載體上方，且該可輻射脫結塗層中包含金屬顆粒。金屬支柱形成於該介電層上方。一裝置晶粒附接至該介電層。該裝置晶粒及該等金屬支柱囊封於一囊封材料中。複數個重佈線形成於該囊封材料之一第一側上且電耦合至該裝置晶粒及該等金屬支柱。藉由將一輻射源投射於該可輻射脫結塗層上使該可輻射脫結塗層分解而使該載體脫結。電連接形成於該囊封材料之一第二側上。該等電連接電耦合至該等金屬支柱。

Description

使用含金屬層以降低封裝形成時之載體衝擊
本發明實施例係有關使用含金屬層以降低封裝形成時之載體衝擊。
隨著半導體技術之發展，半導體晶片/晶粒變得愈來愈小。同時，需要將更多功能整合至半導體晶粒中。因此，半導體晶粒需要將愈來愈多數目之I/O墊封裝至更小區域中，且I/O墊之密度隨時間升高。因此，半導體晶粒之封裝變得更加困難，此不利地影響封裝之良率。 習知封裝技術可劃分成兩種類別。在第一類別中，在鋸切一晶圓上之晶粒之前封裝該等晶粒。此封裝技術具有一些有利特徵，諸如一較大處理量及一較低成本。此外，需要較少底膠填充物或模塑料。然而，此封裝技術亦具有缺點。此係因為晶粒之大小變得愈來愈小，且各自封裝可僅為其中各晶粒之I/O墊限於直接在各自晶粒之表面上之一區之扇入型封裝。在晶粒之有限區域之情況下，I/O墊之數目歸因於I/O墊之節距之限制而受限。若墊之節距減小，則可出現焊橋。另外，在固定球大小需求下，焊球必須具有一特定大小，此繼而限制可包裝於一晶粒之表面上之焊球之數目。 在另一類別之封裝中，在封裝晶粒之前自晶圓鋸切晶粒。此封裝技術之一有利特徵係形成扇出封裝之可能性，此意謂一晶粒上之I/O墊可重佈至大於晶粒之一區域，且因此包裝於晶粒之表面上之I/O墊之數目可增加。此封裝技術之另一有利特徵在於封裝「已知良好晶粒」且丟棄缺陷晶粒，且因此未在缺陷晶粒上浪費成本及工作量。
根據本發明一實施例，一種方法，其包括：在一可輻射脫結塗層上方形成一介電層，其中該可輻射脫結塗層在一載體上方，且該可輻射脫結塗層中包括金屬顆粒；在該介電層上方形成金屬支柱；將一裝置晶粒附接在該介電層上方；將該裝置晶粒及該等金屬支柱囊封於一囊封材料中；在該囊封材料之一第一側上形成複數個重佈線，其中該複數個重佈線電耦合至該裝置晶粒及該等金屬支柱；藉由將一輻射源投射於該可輻射脫結塗層上使該可輻射脫結塗層分解而使該載體脫結；及在該囊封材料之一第二側上形成電連接，其中該等電連接電耦合至該等金屬支柱。 根據本發明另一實施例，一種方法，其包括：在一載體上方形成一毯覆式金屬層；在該毯覆式金屬層上方形成一介電層；在該介電層上方形成金屬支柱；將一裝置晶粒附接至該介電層上；將該裝置晶粒及該等金屬支柱囊封於一囊封材料中；在該囊封材料之一第一側上形成第一複數個重佈線，其中該第一複數個重佈線在該裝置晶粒及該等金屬支柱上方且電耦合至該裝置晶粒及該等金屬支柱；使該載體與該毯覆式金屬層脫結；及移除該毯覆式金屬層。 根據本發明又一實施例，一種方法，其包括：在一可輻射脫結塗層上方施敷一犧牲層，其中該可輻射脫結塗層在一載體上方，且該可輻射脫結塗層中包括金屬顆粒；在該犧牲層上方形成一金屬層；在該金屬層上方形成一第一介電層，其中下伏於該第一介電層之該金屬層未圖案化；圖案化該第一介電層以形成開口，其中該金屬層之部分透過該等開口暴露；形成第一複數個重佈線，其等包括：具有接觸該第一介電層之一頂表面之底表面之跡線部分；及該等開口中之通孔部分；在該第一複數個重佈線上方形成一第二介電層；在該第二介電層上方形成金屬支柱，其中該等金屬支柱透過該第二介電層中之開口電耦合至該第一複數個重佈線；將一裝置晶粒附接在該第二介電層上；將該裝置晶粒及該等金屬支柱囊封於一囊封材料中；藉由使該可輻射脫結塗層分解而使該載體與該犧牲層脫結；及移除該犧牲層。
以下揭露提供許多不同實施例或實例以實施本發明實施例之不同特徵。下文描述組件及配置之特定實例以簡化本揭露。當然，此等實例僅為實例且並不意欲為限制性的。例如，在以下描述中，在一第二構件上方或上形成一第一構件可包含其中第一構件及第二構件經形成而直接接觸之實施例，且亦可包含其中額外構件可形成於第一構件與第二構件之間使得第一構件及第二構件可未直接接觸之實施例。另外，本揭露可在各項實例中重複元件符號及/或字母。此重複係用於簡單及清楚之目的，且其本身並不指示所論述之各種實施例及/或組態之間的一關係。 此外，為便於描述，本文中可使用諸如「下伏」、「下方」、「下」、「上覆」、「上」及類似者之空間相對術語來描述一個元件或構件與另一(些)元件或構件之關係，如圖中所繪示。除圖中描繪之定向外，空間相對術語亦意欲涵蓋裝置在使用或操作中之不同定向。設備可以其他方式定向(旋轉90度或成其他定向)且因此同樣可解釋本文中使用之空間相對描述符。 根據各種例示性實施例提供一種層疊封裝(PoP)結構及形成該封裝之方法。論述該等實施例之變動。在各個視圖及闡釋性實施例之各處，相似元件符號用來標示相似元件。 圖1至圖11繪示根據一些實施例形成一PoP封裝時之中間階段之剖面圖。圖1至圖11中展示之步驟亦示意性地繪示於如圖25中展示之製程流程200中。 圖1繪示載體10及層12。載體10可為一玻璃載體、一陶瓷載體或類似者。載體10可具有一圓形俯視形狀且可具有一矽晶圓之一俯視形狀及大小。例如，載體10可具有一8英吋直徑、一12英吋直徑或類似者。層12形成於載體10上方，且可為一可輻射脫結膜/塗層，其可在輻射熱下分解且因此脫結。根據一些實施例，層12係由一光熱轉換(LTHC)材料形成，該層12可自將於後續步驟中形成之上覆結構連同載體10一起移除。層12係載體10上之塗層。各自步驟繪示為圖25中展示之製程流程中之步驟202。因此，層12在下文中稱為一LTHC塗層。根據本揭露之一些實施例，LTHC塗層12包含碳黑(碳顆粒)、一溶劑、一矽填料及/或環氧樹脂。 圖1繪示包含LTHC塗層12之一部分之區11。區11之一示意性放大視圖展示於圖24中。根據一些實施例，LTHC塗層12包含一金屬粉末，其分佈於基底材料6中且展示為金屬顆粒8。基底材料6可包含溶劑、矽填料及環氧樹脂。金屬顆粒8可由鋁、銅、鎢、鎳或類似者形成，其具有一高導熱率。金屬顆粒8可由實質上純金屬(例如，具有大於約95%或更高之一重量百分比)形成，且不呈(多種)氧化物、碳化物、氮化物或類似者之形成。金屬顆粒8可具有介於約10%與約60%之間的一體積百分比，然而更多或更少之金屬顆粒8可併入於LTHC塗層12中。根據一些實施例，金屬顆粒8具有一足夠大之體積百分比，使得其等本質上連續互連遍及LTHC塗層12以進行有效率熱傳遞，而非形成離散島。 根據一些實施例，將呈金屬粉末之形式之金屬顆粒8混合至一現有LTHC材料(其係如圖24中展示之基底材料6)中以產生塗覆在載體10上之一新穎LTHC材料。 在形成PoP封裝(例如，圖11中之封裝70)時，存在複數個熱製程。歸因於不同部分中之材料差異及溫度變動，載體10之不同區可具有不同溫度。此外，載體10 (其可由玻璃形成)具有一高熱膨脹係數(CTE)且回應於溫度變化而顯著膨脹或收縮。因此，載體10之不同部分之溫度差可引起載體10上之熱衝擊，而導致碎裂或破裂。有利地，藉由將金屬顆粒8併入於LTHC塗層12中，LTHC塗層12之導熱率得以改良，且可有助於散熱以達成載體10之一更均勻熱分佈。載體10遭受之熱衝擊減小。此外，當金屬顆粒8互連時，熱消散能力顯著改良。根據其他實施例，金屬顆粒8形成為離散顆粒及/或顆粒群組，其等形成藉由基底材料6彼此分離之離散島。 根據替代實施例，LTHC塗層12不包含金屬顆粒。根據此等實施例之LTHC塗層12可包含碳黑、矽顆粒、一溶劑、環氧樹脂，且可或可不包含金屬氧化物顆粒。 再參考圖1，層14形成於LTHC塗層12上。各自步驟亦繪示為圖25中展示之製程流程中之步驟202。根據一些實施例，層14係一犧牲層，且可稱為犧牲層14。根據本揭露之一些實施例，層14係由聚合物形成，其亦可為一光敏材料，諸如聚苯并㗁唑(PBO)、聚醯亞胺、苯環丁烯(BCB)或類似者。因此，層14可透過曝光及顯影而圖案化。犧牲層14係未圖案化之一毯覆式層，且具有一平坦頂表面。 接著，在一毯覆式沈積步驟中金屬層16 (其亦可為一犧牲層)形成於犧牲層14上方。各自步驟繪示為圖25中展示之製程流程中之步驟204。根據本揭露之一些實施例，金屬層16具有一複合結構，其可包含鈦層16A及鈦層16A上方之銅層16B。根據一些其他實施例，金屬層16係由一單一均質材料形成，其可包含鋁、銅、鋁銅、鈦或其等之合金。類似於含金屬LTHC塗層12，金屬層16亦具有在封裝製程中重佈熱之功能。為改良效率，金屬層16之厚度T1可足夠大以達成令人滿意的熱重佈能力。厚度T1可大於鍍敷時使用之典型晶種層之厚度。根據一些實施例，厚度T1大於約0.5 µm。可使用例如物理氣相沈積(PVD)來形成金屬層16。 圖2繪示介電層18及重佈線(RDL) 20之形成。首先在金屬層16上方形成介電層18。介電層18可由與介電層14之材料不同或相同之一材料形成。根據一些實施例，介電層18係由一有機材料(諸如聚合物，其可為PBO或聚醯亞胺)形成。根據替代實施例，介電層18係由一無機材料形成，例如，氮化物(諸如氮化矽)、氧化物(諸如氧化矽)、磷矽酸鹽玻璃(PSG)、硼矽酸玻璃(BSG)、硼摻雜磷矽酸鹽玻璃(BPSG)或類似者。介電層18經圖案化以形成開口(由RDL 20佔據)，下伏金屬層16透過該等開口暴露。 接著，形成RDL 20。各自步驟繪示為圖25中展示之製程流程中之步驟206。形成製程包含：形成一毯覆式晶種層(未展示)，在晶種層上方形成一圖案化遮罩(未展示)，且執行一金屬鍍敷以形成RDL 20。晶種層包含介電層18上方之部分及延伸至介電層18中之開口中以接觸金屬層16之部分。圖案化遮罩層可由一光阻劑形成。根據一些實施例，晶種層包含鈦層及鈦層上方之銅層。根據替代實施例，晶種層包含一單一銅層或一單一銅合金層。晶種層可使用例如PVD形成。在形成RDL 20時，金屬層16並未用作一晶種層。可使用例如無電式電鍍來執行鍍敷。鍍敷材料可包含銅或銅合金。在鍍敷之後，移除圖案化遮罩。接著，在一蝕刻步驟中移除先前由經移除圖案化遮罩覆蓋之晶種層之部分，而留下如圖2中之RDL 20。RDL 20包含介電層18中之通孔部分20A及介電層18上方之跡線部分20B。 參考圖3，形成介電層24且接著進行圖案化。各自步驟繪示為圖25中展示之製程流程中之步驟208。介電層24可(或可未)由選自用於形成介電層14及/或18之相同候選材料群組之一材料形成，且可由聚合物或一無機材料形成。接著，圖案化介電層24，且暴露RDL 20之一些部分。因圖案化而形成開口26。 圖4繪示金屬支柱28之形成。各自步驟繪示為圖25中展示之製程流程中之步驟210。參考圖4，形成金屬晶種層33，且其延伸至開口26 (圖3)中。圖案化遮罩32 (其可由一光阻劑形成)形成於金屬晶種層33上方，且經圖案化使得暴露晶種層33之一些部分。接著，執行一鍍敷步驟以形成金屬支柱28。在鍍敷之後，移除圖案化遮罩32，其後接著移除先前由圖案化遮罩32覆蓋之晶種層33之部分。在描述各處，將晶種層33之剩餘部分視為金屬支柱28之部分。 圖5繪示將裝置晶粒34附接在介電層24上方。各自步驟繪示為圖25中展示之製程流程中之步驟212。裝置晶粒34可透過晶粒附接膜36黏著至介電層24。晶粒附接膜36之邊緣與各自裝置晶粒34之對應邊緣共端(與其垂直對準)。晶粒附接膜36係黏著膜。儘管繪示一個裝置晶粒34，然存在與此步驟中放置之裝置晶粒34相同之複數個裝置晶粒。複數個經放置裝置晶粒可配置為包含複數個列及複數個行之一陣列。裝置晶粒34可包含一半導體基板，其具有與各自下伏晶粒附接膜36實體接觸之一背表面(該表面面向下)。裝置晶粒34進一步包含在半導體基板之前表面(該表面面向上)處之積體電路裝置(諸如主動裝置，其包含電晶體，未展示)。裝置晶粒34可為一邏輯晶粒，諸如一中央處理單元(CPU)晶粒、一圖形處理單元(GPU)晶粒、一行動應用晶粒或類似者。根據一些例示性實施例，裝置晶粒34包含連接至積體電路裝置之金屬柱38及覆蓋及/或環繞金屬柱38之介電層40。根據一些實施例，金屬柱38可為銅柱。介電層40可由聚合物(諸如聚醯亞胺或PBO)形成。 接著，執行一囊封，且將裝置晶粒34囊封於囊封材料42中，如圖6中展示。各自步驟繪示為圖25中展示之製程流程中之步驟214。囊封材料42可為一模塑料，一模製底膠填充物、環氧樹脂或一樹脂。囊封材料42填充相鄰金屬支柱28之間的間隙及金屬支柱28與裝置晶粒34之間的間隙。囊封材料42之頂表面高於金屬支柱28之頂端。 接著，執行一平坦化步驟(諸如一化學機械拋光(CMP)或一機械研磨)以薄化囊封材料42，直至暴露金屬支柱28及金屬柱38。圖6中展示所得結構。歸因於平坦化，金屬支柱28之頂端實質上與囊封材料42之頂表面及金屬柱38之頂表面齊平(共面)。 參考圖7，一或多個介電層46及各自RDL 48形成於囊封材料42、金屬支柱28及金屬柱38上方。各自步驟繪示為圖25中展示之製程流程中之步驟216。根據本揭露之一些實施例，介電層46係由(多種)聚合物(諸如PBO、聚醯亞胺或類似者)形成。根據本揭露之替代實施例，介電層46係由一(多種)無機介電材料(諸如氮化矽、氧化矽、氮氧化矽或類似者)形成。 RDL 48形成於介電層46中以電耦合至金屬柱38及金屬支柱28。RDL 48亦可將金屬柱38及金屬支柱28彼此互連。RDL 48可包含金屬跡線(金屬線)及下伏且連接至金屬跡線之通孔。根據本揭露之一些實施例，RDL 48係透過鍍敷製程形成，其中RDL 48之各者包含一晶種層(未展示)及晶種層上方之一鍍敷金屬材料。RDL 48之各層之形成可類似於RDL 20之形成。 圖8繪示根據本揭露之一些例示性實施例之凸塊下金屬(UBM) 50及電連接器52之形成。電連接器52電耦合至RDL 48、金屬柱38及/或金屬支柱28。形成製程可包含：在RDL 48上方形成頂部介電層47且接著圖案化頂部介電層47以暴露RDL 48之金屬墊。接著，UBM 50經形成以延伸至頂部介電層47中。可將焊球放置於UBM 50上方，且接著回焊以形成焊料區52。根據本揭露之替代實施例，形成電連接器52包含：執行一鍍敷步驟以在RDL 48上方形成焊料區且接著對焊料區進行回焊。電連接器52亦可包含金屬柱(或金屬柱及焊料蓋)，其等亦可透過鍍敷形成。 亦如圖8中展示，亦將被動裝置54 (其可表示複數個被動裝置)接合至RDL 48。經接合被動裝置(諸如被動裝置54)可包含電容器、電阻器、電感器或類似者，且可為其中未形成諸如電晶體及二極體之主動裝置之離散裝置。在描述各處，包含介電層14、金屬層16、(若干)裝置晶粒34、金屬支柱28、囊封材料42、RDL 48、介電層46及上覆構件之組合結構稱為封裝56，其可為一複合晶圓。 接著，使封裝56與載體10脫結。各自步驟繪示為圖25中展示之製程流程中之步驟218。根據一些例示性脫結製程，例如藉由透過載體10將輻射53 (其可為雷射或一UV光)投射於LTHC塗層12上而執行脫結。由光或雷射產生之熱引起LTHC塗層12分解，且因此使載體10從封裝56脫離。圖9中展示所得結構。因此，暴露介電層14。 接著，例如在一蝕刻步驟或一機械研磨步驟中移除介電層14。各自步驟繪示為圖25中展示之製程流程中之步驟220。根據一些實施例，經暴露金屬層16經完全移除以暴露RDL 20之通孔。各自步驟亦繪示為圖25中展示之製程流程中之步驟220。金屬層16之移除可亦透過蝕刻或機械研磨執行。根據替代實施例，在一蝕刻步驟中圖案化金屬層16 (使用一圖案化遮罩層，諸如一光阻劑，未展示)，而非完全移除金屬層16。金屬層16之剩餘部分形成一額外RDL層，其包含金屬跡線及金屬墊。 圖10繪示在移除介電層14及金屬層16 (圖9)之後之結構。接著，將封裝60接合至封裝56，因此形成PoP封裝70，如圖11中展示。各自步驟繪示為圖25中展示之製程流程中之步驟222。儘管繪示一個封裝60，然可存在與接合至下伏封裝56之封裝60相同之複數個封裝。透過焊料區62執行接合，此將RDL 20連結至上覆封裝60中之金屬墊。根據本揭露之一些實施例，封裝60包含(若干)裝置晶粒64，其可為記憶體晶粒，諸如快閃記憶體晶粒、靜態隨機存取記憶體(SRAM)晶粒、動態隨機存取記憶體(DRAM)晶粒或類似者。根據一些例示性實施例，記憶體晶粒亦可接合至封裝基板66。 在將封裝60接合至封裝56之後，將底膠填充物68放置至封裝60與封裝56之間的間隙中。在後續步驟中，將圖11中展示之封裝鋸開成複數個封裝，且圖11中亦繪示所得PoP封裝70之一者。複合晶圓56被鋸切成複數個封裝56’。封裝60及56’亦分別稱為PoP封裝之一頂部封裝及一底部封裝。根據替代實施例，首先執行分離複合晶圓56之鋸切，且接著將自複合晶圓56鋸切之封裝56’接合至頂部封裝60以形成PoP封裝70。 圖12至圖18及圖19至圖23繪示根據本揭露之一些實施例形成PoP封裝時之中間階段之剖面圖。除非另有指定，否則此等實施例中之組件之材料及形成方法本質上與在圖1至圖11中展示之實施例中由相同元件符號表示之相似組件相同。因此，可在圖1至圖11中展示之實施例之論述中找到關於圖12至圖23中展示之組件之形成製程及材料之細節。 圖12至圖18中展示之實施例類似於圖1至圖11中展示之實施例，惟未形成金屬層16 (圖1)及RDL 20 (圖11)除外。參考圖12，LTHC塗層12形成於載體10上方。圖24中繪示LTHC塗層12之一部分，其中金屬顆粒8併入於LTHC塗層12中。因此，LTHC塗層12之導熱率得以改良以降低在封裝之後續熱處理中之載體10之熱衝擊。接著，介電層14’形成於LTHC塗層12上方。根據一些實施例，介電層14’係一毯覆式層。 圖13繪示金屬支柱28之形成，其中形成製程包含：沈積一金屬晶種層(未展示)；形成一圖案化遮罩(未展示)(諸如一圖案化光阻劑)；鍍敷金屬支柱28；移除圖案化遮罩；及蝕刻歸因於圖案化遮罩之移除而暴露之晶種層之部分。接著，如圖14中展示，透過晶粒附接膜36將裝置晶粒34附接至介電層14’。 圖15繪示將金屬支柱28及裝置晶粒34囊封於囊封材料42中，其後接著一平坦化步驟以顯露金屬柱38及金屬支柱28。在後續製程中，如圖16中展示，形成介電層46、RDL 48、UBM 50及電連接器52。亦將被動裝置54接合至RDL 48。因此形成封裝56，其可為一複合晶圓。 接著，例如藉由使用雷射或一UV光53使LTHC塗層12分解而使封裝56與載體10脫結。圖17中展示所得結構，其相對於圖16之定向上下倒置。 在形成如圖17中展示之結構之後，在介電層14’中形成開口(由圖18中之焊料區62佔據)。例如，介電層14’可使用雷射鑽孔圖案化以移除與金屬支柱28重疊之介電層14’之部分，使得金屬支柱28透過開口暴露。 接著，如圖18中展示，透過焊料區62將封裝60接合至金屬支柱28，其中焊料區62延伸至介電層14’中之開口中。亦施配底膠填充物68。類似地，可在接合(若干)封裝60之前或之後鋸切複合晶圓56。 圖19至圖23繪示根據替代實施例形成一PoP封裝時之中間階段之剖面圖。圖19至圖23中展示之實施例類似於圖1至圖11中展示之實施例，惟未形成圖11中展示之RDL 20而形成圖1中展示之金屬層16除外。 參考圖19，形成LTHC塗層12，其後接著循序形成層14、金屬層16及介電層18’。根據一些實施例，LTHC塗層12包含如圖24中展示之金屬顆粒8，或可無金屬顆粒。LTHC塗層12及金屬層16兩者皆具有重佈/散熱之功能，以降低載體10遭受之熱衝擊。 如圖20中展示，形成金屬支柱28，其後接著附接裝置晶粒34且將裝置晶粒34及金屬支柱28囊封於囊封材料42中。在已形成金屬支柱28時，介電層18’保持未圖案化，且保留為一毯覆式層。圖21繪示介電層46、RDL 48、UBM 50及電連接器52之形成。此外，接合被動裝置54。接著，透過LTHC塗層12之分解使所得複合晶圓56與載體10脫結，該分解係透過雷射或UV光53執行。圖22中展示所得複合晶圓56。 接著，例如透過蝕刻及/或機械研磨移除如圖22中展示之介電層14及金屬層16。圖23中展示所得結構。後續製程步驟類似於關於圖18論述之步驟，且本文中不再重複。所得結構本質上與圖18中展示之結構相同。 本揭露之實施例具有一些有利特徵。在根據本揭露之實施例之封裝製程中，存在複數個熱處理，諸如聚合物層之固化及(若干)囊封材料之固化。熱處理導致玻璃載體之加熱及冷卻，玻璃載體歸因於不均勻之溫度分佈而遭受碎裂或破裂。藉由將金屬顆粒併入於LTHC塗層中及/或在LTHC塗層上方形成一金屬層，整個載體10上之溫度差可歸因於LTHC塗層之增加的導熱率及/或金屬層之增添的導熱率而減小。 根據本揭露之一些實施例，一種方法包含在一可輻射脫結塗層上方形成一介電層。可輻射脫結塗層在一載體上方，且可輻射脫結塗層中包含金屬顆粒。金屬支柱形成於介電層上方。一裝置晶粒經附接至介電層。裝置晶粒及金屬支柱經囊封於一囊封材料中。複數個重佈線形成於囊封材料之一第一側上且電耦合至裝置晶粒及金屬支柱。藉由將一輻射源投射於可輻射脫結塗層上使可輻射脫結塗層分解而使載體脫結。電連接形成於囊封材料之一第二側上。電連接電耦合至金屬支柱。 根據本揭露之一些實施例，一種方法包含：在一載體上方形成一毯覆式金屬層；在毯覆式金屬層上方形成一介電層；在介電層上方形成金屬支柱；將一裝置晶粒附接至介電層；將裝置晶粒及金屬支柱囊封於一囊封材料中；及在囊封材料之一第一側上形成第一複數個重佈線。第一複數個重佈線在裝置晶粒及金屬支柱上方且電耦合至裝置晶粒及金屬支柱。方法進一步包含使載體與毯覆式金屬層脫結及移除毯覆式金屬層。 根據本揭露之一些實施例，一種方法包含在一可輻射脫結塗層上方施敷一犧牲層。可輻射脫結塗層在一載體上方，且可輻射脫結塗層中具有金屬顆粒。方法進一步包含：在犧牲層上方形成一金屬層，在金屬層上方形成一第一介電層，其中下伏於第一介電層之金屬層未圖案化；圖案化第一介電層以形成開口，其中金屬層之部分透過開口暴露；及形成第一複數個重佈線，其包含具有接觸第一介電層之一頂表面之底表面之跡線部分及開口中之通孔部分。方法包含在第一複數個重佈線上方形成一第二介電層，且在第二介電層上方形成金屬支柱。金屬支柱透過第二介電層中之開口電耦合至第一複數個重佈線。方法進一步包含：將一裝置晶粒附接在第二介電層上；將裝置晶粒及金屬支柱囊封於一囊封材料中；藉由使可輻射脫結塗層分解而使載體與犧牲層脫結；及移除犧牲層。 前文概述數種實施例之特徵，使得熟習此項技術者可更佳理解本揭露之態樣。熟習此項技術者應明白，其等可容易將本揭露用作設計或修改其他製程及結構之一基礎以實行本文中介紹之實施例之相同目的及/或達成相同優點。熟習此項技術者亦應認識到，此等等效構造並未脫結本揭露之精神及範疇，且其等可在不脫結本揭露之精神及範疇之情況下在本文中進行各種改變、置換及更改。
6‧‧‧基底材料
8‧‧‧金屬顆粒
10‧‧‧載體
11‧‧‧區
12‧‧‧層/光熱轉換(LTHC)塗層
14‧‧‧犧牲層/介電層
14’‧‧‧介電層
16‧‧‧金屬層
16A‧‧‧鈦層
16B‧‧‧銅層
18‧‧‧介電層
18’‧‧‧介電層
20‧‧‧重佈線(RDL)
20A‧‧‧通孔部分
20B‧‧‧跡線部分
24‧‧‧介電層
26‧‧‧開口
28‧‧‧金屬支柱
32‧‧‧圖案化遮罩
33‧‧‧金屬晶種層
34‧‧‧裝置晶粒
36‧‧‧晶粒附接膜
38‧‧‧金屬柱
40‧‧‧介電層
42‧‧‧囊封材料
46‧‧‧介電層
47‧‧‧頂部介電層
48‧‧‧重佈線(RDL)
50‧‧‧凸塊下金屬(UBM)
52‧‧‧電連接器/焊料區
53‧‧‧輻射/雷射/UV光
54‧‧‧被動裝置
56‧‧‧封裝/複合晶圓
56’‧‧‧封裝
60‧‧‧封裝
62‧‧‧焊料區
64‧‧‧裝置晶粒
66‧‧‧封裝基板
68‧‧‧底膠填充物
70‧‧‧封裝
200‧‧‧製程流程
202‧‧‧步驟
204‧‧‧步驟
206‧‧‧步驟
208‧‧‧步驟
210‧‧‧步驟
212‧‧‧步驟
214‧‧‧步驟
216‧‧‧步驟
218‧‧‧步驟
220‧‧‧步驟
222‧‧‧步驟
T1‧‧‧金屬層之厚度
當結合附圖閱讀時，自以下[實施方式]最佳理解本揭露之態樣。應注意，根據工業中之標準實踐，各種構件未按比例繪製。事實上，為清楚論述，各種構件之尺寸可經任意增大或減小。 圖1至圖11繪示根據一些實施例形成一封裝時之中間階段之剖面圖。 圖12至圖18繪示根據一些實施例形成一封裝時之中間階段之剖面圖。 圖19至圖23繪示根據一些實施例形成一封裝時之中間階段之剖面圖。 圖24繪示根據一些實施例之一光熱轉換(LTHC)塗層之一部分之一放大視圖。 圖25繪示根據一些實施例之形成一封裝之一製程流程。
18‧‧‧介電層
20‧‧‧重佈線(RDL)
24‧‧‧介電層
28‧‧‧金屬支柱
34‧‧‧裝置晶粒
36‧‧‧晶粒附接膜
38‧‧‧金屬柱
40‧‧‧介電層
42‧‧‧囊封材料
46‧‧‧介電層
47‧‧‧頂部介電層
48‧‧‧重佈線(RDL)
50‧‧‧凸塊下金屬(UBM)
52‧‧‧電連接器/焊料區
54‧‧‧被動裝置
56‧‧‧封裝/複合晶圓
56’‧‧‧封裝
60‧‧‧封裝
62‧‧‧焊料區
64‧‧‧裝置晶粒
66‧‧‧封裝基板
68‧‧‧底膠填充物
70‧‧‧封裝

Claims (20)

  1. 一種方法，其包括： 在一可輻射脫結塗層上方形成一介電層，其中該可輻射脫結塗層在一載體上方，且該可輻射脫結塗層中包括金屬顆粒； 在該介電層上方形成金屬支柱； 將一裝置晶粒附接在該介電層上方； 將該裝置晶粒及該等金屬支柱囊封於一囊封材料中； 在該囊封材料之一第一側上形成複數個重佈線，其中該複數個重佈線電耦合至該裝置晶粒及該等金屬支柱； 藉由將一輻射源投射於該可輻射脫結塗層上使該可輻射脫結塗層分解而使該載體脫結；及 在該囊封材料之一第二側上形成電連接，其中該等電連接電耦合至該等金屬支柱。
  2. 如請求項1之方法，其中該等金屬顆粒包括鋁、銅、鎢、鎳或其等之組合。
  3. 如請求項1之方法，其進一步包括將該等金屬顆粒混合至該可輻射脫結塗層中。
  4. 如請求項1之方法，其進一步包括： 在該載體上方形成一毯覆式金屬層，其中該介電層形成於該毯覆式金屬層上方；及 在執行該囊封之後，移除該毯覆式金屬層。
  5. 如請求項4之方法，其中完全移除該毯覆式金屬層。
  6. 如請求項4之方法，其進一步包括： 圖案化該介電層以形成開口，其中該毯覆式金屬層透過該等開口暴露； 形成延伸至該等開口中以接觸該毯覆式金屬層之一晶種層；及 執行一鍍敷以形成重佈線。
  7. 如請求項4之方法，其進一步包括其中在形成該等金屬支柱之後，該介電層保持未圖案化。
  8. 如請求項1之方法，其中在形成該等金屬支柱之後，該介電層保持未圖案化。
  9. 一種方法，其包括： 在一載體上方形成一毯覆式金屬層； 在該毯覆式金屬層上方形成一介電層； 在該介電層上方形成金屬支柱； 將一裝置晶粒附接至該介電層上； 將該裝置晶粒及該等金屬支柱囊封於一囊封材料中； 在該囊封材料之一第一側上形成第一複數個重佈線，其中該第一複數個重佈線在該裝置晶粒及該等金屬支柱上方且電耦合至該裝置晶粒及該等金屬支柱； 使該載體與該毯覆式金屬層脫結；及 移除該毯覆式金屬層。
  10. 如請求項9之方法，其中完全移除該毯覆式金屬層。
  11. 如請求項9之方法，其進一步包括形成第二複數個重佈線，其中該等金屬支柱在該第二複數個重佈線上方且電耦合至該第二複數個重佈線，其中該第二複數個重佈線包括： 跡線部分，其等具有接觸該介電層之一頂表面之底表面；及 通孔部分，其等延伸至該介電層中以實體接觸該毯覆式金屬層，其中該等金屬支柱在該第二複數個重佈線上方且電耦合至該第二複數個重佈線，其中在移除該毯覆式金屬層之後，該第二複數個重佈線之該等通孔部分暴露。
  12. 如請求項11之方法，其中在未使用該毯覆式金屬層作為一晶種層之情況下形成該第二複數個重佈線。
  13. 如請求項9之方法，其中在形成該等金屬支柱之後，該介電層保持未圖案化，且該方法進一步包括： 在移除該毯覆式金屬層之後，圖案化該介電層以形成開口，其中該等金屬支柱透過該等開口暴露。
  14. 如請求項13之方法，其進一步包括透過焊料區將一封裝接合至該等金屬支柱，其中該等焊料區延伸至該等開口中以連結該等金屬支柱。
  15. 如請求項9之方法，其進一步包括在一可輻射脫結塗層上方施覆一犧牲層，其中該可輻射脫結塗層在該載體上方，且該可輻射脫結塗層中包括金屬顆粒，且該使該載體脫結包括使該可輻射脫結塗層分解。
  16. 一種方法，其包括： 在一可輻射脫結塗層上方施敷一犧牲層，其中該可輻射脫結塗層在一載體上方，且該可輻射脫結塗層中包括金屬顆粒； 在該犧牲層上方形成一金屬層； 在該金屬層上方形成一第一介電層，其中下伏於該第一介電層之該金屬層未圖案化； 圖案化該第一介電層以形成開口，其中該金屬層之部分透過該等開口暴露； 形成第一複數個重佈線，其等包括： 具有接觸該第一介電層之一頂表面之底表面之跡線部分；及 該等開口中之通孔部分； 在該第一複數個重佈線上方形成一第二介電層； 在該第二介電層上方形成金屬支柱，其中該等金屬支柱透過該第二介電層中之開口電耦合至該第一複數個重佈線； 將一裝置晶粒附接在該第二介電層上； 將該裝置晶粒及該等金屬支柱囊封於一囊封材料中； 藉由使該可輻射脫結塗層分解而使該載體與該犧牲層脫結；及 移除該犧牲層。
  17. 如請求項16之方法，其進一步包括移除該金屬層。
  18. 如請求項17之方法，其中移除整個該金屬層。
  19. 如請求項16之方法，其進一步包括移除該犧牲層。
  20. 如請求項16之方法，其進一步包括形成電耦合至該裝置晶粒及該等金屬支柱之第二複數個重佈線，其中該第一及該第二複數個重佈線在該囊封材料之相對側上。
TW106120924A 2016-07-29 2017-06-22 封裝結構的製造方法 TWI640055B (zh)

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