TW201802923A - Substrate processing apparatus comprising substrate holding plate, processing solution holding plate, heater and lifting mechanism - Google Patents
Substrate processing apparatus comprising substrate holding plate, processing solution holding plate, heater and lifting mechanism Download PDFInfo
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Abstract
Description
本發明的實施形態係有關於基板處理裝置。 An embodiment of the present invention relates to a substrate processing apparatus.
基板處理裝置為在半導體及液晶面板等的製造工程中，對晶圓及液晶基板等的基板表面供應處理液(例如，光阻剝離液及洗淨液等)來處理基板表面的裝置。作為該基板處理裝置，為了提升基板處理效率，提案有將旋轉的基板上的處理液加熱，利用該處理液的性質及熱量來處理基板表面的葉片式基板處理裝置。 The substrate processing device is a device that supplies a processing liquid (for example, a photoresist peeling liquid, a cleaning liquid, and the like) to a substrate surface of a wafer, a liquid crystal substrate, or the like in a manufacturing process of a semiconductor, a liquid crystal panel, or the like to process the substrate surface. As this substrate processing apparatus, in order to improve substrate processing efficiency, a blade type substrate processing apparatus that heats a processing liquid on a rotating substrate and uses the properties and heat of the processing liquid to process a substrate surface has been proposed.
在該葉片式的基板處理裝置中，為了將基板表面均勻處理，使基板表面上的液溫均勻是重要的。在這裡，在對向於基板表面而遠離的位置設置處理液保持平板，藉由加熱器來加熱該處理液保持平板。接著，此時，存在於基板表面與處理液保持平板之間(例如，數mm)的處理液，因處理液保持平板而均勻地加溫。 In this blade type substrate processing apparatus, in order to uniformly process the substrate surface, it is important to make the liquid temperature on the substrate surface uniform. Here, a processing liquid holding plate is provided at a position facing away from the substrate surface, and the processing liquid holding plate is heated by a heater. Next, at this time, the processing liquid existing between the substrate surface and the processing liquid holding plate (for example, several mm) is uniformly heated by the processing liquid holding the plate.
詳言之，處理液供給管以貫通處理液保持平板的方式設置，從處理液供給管的開口吐出處理液。處理液從該吐出口被供應至基板表面，在處理液保持平板與基板表面的 間隙擴散，並保持於該間隙中。該處理液，藉由加熱器所加熱的處理液保持平板來加溫。此外，處理液保持平板在升降方向以可移動方式設置。此外，在與處理液保持平板的基板側相反側的表面，設有溫度感測器(例如，熱電偶等)。 Specifically, the processing liquid supply pipe is provided so as to penetrate the processing liquid holding plate, and the processing liquid is discharged from the opening of the processing liquid supply pipe. The processing liquid is supplied to the substrate surface from the discharge port, and the processing liquid holds the flat plate and the substrate surface. The gap spreads and remains in the gap. This processing liquid is heated by holding the processing liquid heated by a heater to a flat plate. In addition, the processing liquid holding plate is movably disposed in a lifting direction. In addition, a temperature sensor (for example, a thermocouple or the like) is provided on a surface on the side opposite to the substrate side of the processing liquid holding plate.
在該基板處理裝置中，當基板處理結束後，在使處理液保持平板上升並遠離基板表面時也一樣，從吐出口持續吐出處理液。這是為了即便是處理液保持平板的基板側的表面附著的液滴落下，使基板表面存在處理液的層能防止產生水印。此外，在處理液保持平板從預定的處理位置上升的狀態下，大部分的附著於處理液保持平板的基板側表面的液滴，雖然會因處理液保持平板的加熱(加溫處理液程度的加熱)而漸漸地變小最後蒸發(雖然蒸發需要時間)，但該蒸發前液滴彼此會接觸並一體化，會有落下至基板表面的情形發生。 In this substrate processing apparatus, after the substrate processing is completed, the processing liquid is continuously discharged from the discharge port even when the processing liquid is kept flat and moved away from the substrate surface. This is to prevent a watermark from being generated in a layer in which a processing liquid is present on the substrate surface even if a droplet adhered to the surface of the substrate side of the processing liquid holding plate is dropped. In addition, in a state where the processing liquid holding plate is raised from a predetermined processing position, most of the liquid droplets adhering to the substrate side surface of the processing liquid holding plate are heated by the processing liquid holding plate (the temperature of the processing liquid is warmed). (Heating) and gradually become smaller and finally evaporate (although it takes time to evaporate), before the evaporation, the droplets will contact and integrate with each other, and they may fall onto the substrate surface.
例如，使前述處理液保持平板上升而離遠基板表面後，雖停止處理液的吐出，但此時，液滴會有附著於處理液保持平板的吐出口周圍的情形發生。在附著於吐出口周圍的液滴蒸發以前，會因處理液保持平板的傾斜或氣流等而移動，與附著於處理液保持平板的基板側表面的蒸發前的其他液滴接觸並一體化，會有落下至基板表面的情形發生。這是對於結束處理的基板表面來說，成為水印等品質不良的原因。 For example, after the processing liquid holding plate is lifted away from the surface of the substrate, the discharge of the processing liquid is stopped, but at this time, droplets may adhere to the surroundings of the discharge opening of the processing liquid holding plate. Before the liquid droplets adhering to the periphery of the discharge port evaporate, they will move due to the inclination or air flow of the processing liquid holding plate, and will contact and integrate with other liquid droplets before evaporation that adhere to the substrate side surface of the processing liquid holding plate. It may drop to the surface of the substrate. This is a cause of poor quality such as watermarking on the surface of the substrate after the processing is completed.
此外，處理液的供應停止後，附著於吐出口周圍或其 他處所的液滴，因為處理液保持平板的傾斜或氣流等而移動，在處理液保持平板的基板側的表面，會有附著於對向溫度感測器的檢出位置的情形發生。此時，因為液滴的影響，溫度感測器會難以正確地測定處理液保持平板的溫度。因此，難以使處理液保持平板的溫度，也就是難以穩定加熱溫度的控制。這是因為難以將處理液溫度維持在所期望溫度，成為處理不足等的品質不良的原因。 In addition, after the supply of the treatment liquid is stopped, The droplets in other places move due to the inclination or air flow of the processing liquid holding plate, and the surface of the substrate side of the processing liquid holding plate may adhere to the detection position of the opposed temperature sensor. At this time, it is difficult for the temperature sensor to accurately measure the temperature of the processing liquid holding plate due to the influence of the liquid droplet. Therefore, it is difficult to keep the processing liquid at a flat plate temperature, that is, it is difficult to stabilize the control of the heating temperature. This is because it is difficult to maintain the temperature of the processing liquid at a desired temperature, which is a cause of poor quality such as insufficient processing.
此外，即便基板處理結束，加熱器也會驅動，進行穩定的加熱溫度的控制。這是因為處理結束後加熱器停止的話，在處理新基板時，加熱器的加熱開始後到處理液保持平板被提升到預定溫度為止，需要時間。也就是說，即便新的未處理基板被搬入，為了能夠馬上開始處理，處理液保持平板上升時也需要進行加熱器的溫度控制。 In addition, even if the substrate processing is completed, the heater is driven to perform stable heating temperature control. This is because if the heater is stopped after the processing is completed, it takes time after the heating of the heater is started until the processing liquid holding plate is raised to a predetermined temperature when processing a new substrate. In other words, even if a new unprocessed substrate is carried in, in order to immediately start processing, the temperature of the heater needs to be controlled when the processing liquid is held up in the plate.
本發明所欲解決的課題為提供一種能抑制基板品質不良的發生的基板處理裝置。 The problem to be solved by the present invention is to provide a substrate processing apparatus capable of suppressing occurrence of substrate quality defects.
有關實施形態的基板處理裝置具備：保持基板的基板保持部；具有吐出處理液的吐出口，且設於與基板保持部所保持的基板的表面對向並遠離的位置，將從吐出口吐出的處理液保持在基板保持部所保持的基板的表面之間的處理液保持平板；設於處理液保持平板，並加熱處理液保持平板的加熱器；相對於基板保持部所保持的基板，使處理液保持平板及加熱器升降的升降機構；設於處理液保持平 板的基板側的表面並以環狀圍繞吐出口，將處理液排開的撥液層。 A substrate processing apparatus according to this embodiment includes a substrate holding portion that holds a substrate, and a discharge port that discharges a processing liquid, and is provided at a position facing away from the surface of the substrate held by the substrate holding portion, and is discharged from the discharge port. The processing liquid holding plate is held between the surfaces of the substrates held by the substrate holding portion. The heater is provided on the processing liquid holding plate and heats the processing liquid holding plate. The processing is performed on the substrate held by the substrate holding portion. Lifting mechanism for lifting and lowering liquid holding plate and heater; The surface on the substrate side of the plate surrounds the discharge port in a ring shape, and the liquid-repellent layer that discharges the processing liquid.
有關實施形態的基板處理裝置具備：保持基板的基板保持部；具有吐出處理液的吐出口，且設於與基板保持部所保持的基板的表面對向並遠離的位置，將從吐出口吐出的處理液保持在基板保持部所保持的基板的表面之間的處理液保持平板；設於處理液保持平板，並加熱處理液保持平板的加熱器；相對於基板保持部所保持的基板，使處理液保持平板及加熱器升降的升降機構；設於處理液保持平板，檢出處理液保持平板的溫度的溫度感測器；設於處理液保持平板的基板側的面並對向於溫度感測器，將處理液排開的撥液層。 A substrate processing apparatus according to this embodiment includes a substrate holding portion that holds a substrate, and a discharge port that discharges a processing liquid, and is provided at a position facing away from the surface of the substrate held by the substrate holding portion, and is discharged from the discharge port. The processing liquid holding plate is held between the surfaces of the substrates held by the substrate holding portion. The heater is provided on the processing liquid holding plate and heats the processing liquid holding plate. The processing is performed on the substrate held by the substrate holding portion. Lifting mechanism for lifting and lowering liquid holding plate and heater; temperature sensor provided on processing liquid holding plate and detecting temperature of processing liquid holding plate; provided on surface of substrate side of processing liquid holding plate and facing temperature sensing A liquid-repellent layer that drains the processing liquid.
根據前述實施形態的基板處理裝置，能抑制基板品質不良的發生。 According to the substrate processing apparatus of the aforementioned embodiment, it is possible to suppress occurrence of substrate quality defects.
10‧‧‧基板處理裝置 10‧‧‧ substrate processing equipment
20‧‧‧基板保持平板 20‧‧‧ substrate holding plate
40‧‧‧處理液保持平板 40‧‧‧ treatment liquid keep flat
40a‧‧‧吐出口 40a‧‧‧Eject
41‧‧‧加熱器 41‧‧‧heater
42‧‧‧溫度感測器 42‧‧‧Temperature sensor
43‧‧‧撥液層 43‧‧‧Liquid layer
43a‧‧‧撥液層 43a‧‧‧Liquid layer
44‧‧‧撥液層 44‧‧‧Liquid layer
45‧‧‧撥液層 45‧‧‧Liquid layer
46‧‧‧撥液層 46‧‧‧Liquid layer
47‧‧‧撥液層 47‧‧‧Liquid layer
60‧‧‧升降機構 60‧‧‧Lifting mechanism
S‧‧‧處理液 S‧‧‧treatment fluid
W‧‧‧基板 W‧‧‧ substrate
[圖1]表示有關第1實施形態的基板處理裝置的概略構成的圖。 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment.
[圖2]表示有關第1實施形態的處理液保持平板的基板側表面的平面圖。 FIG. 2 is a plan view showing a substrate-side surface of a processing liquid holding plate according to the first embodiment.
[圖3]表示有關第1實施形態的基板處理裝置的基板處理的流程之時序流程圖。 [Fig. 3] Fig. 3 is a timing chart showing a flow of substrate processing by the substrate processing apparatus according to the first embodiment.
[圖4]表示有關第1實施形態的基板處理裝置的一部分的剖面圖。 4 is a cross-sectional view showing a part of the substrate processing apparatus according to the first embodiment.
[圖5]表示有關第2實施形態的處理液保持平板的基板側表面的平面圖。 5 is a plan view showing a substrate-side surface of a processing liquid holding plate according to a second embodiment.
[圖6]表示有關第3實施形態的基板處理裝置的一部分的剖面圖。 6 is a cross-sectional view showing a part of a substrate processing apparatus according to a third embodiment.
[圖7]表示有關第3實施形態的處理液保持平板的基板側表面的平面圖。 7 is a plan view showing a substrate-side surface of a processing liquid holding plate according to a third embodiment.
[圖8]表示有關第4實施形態的基板處理裝置的一部分的剖面圖。 8 is a cross-sectional view showing a part of a substrate processing apparatus according to a fourth embodiment.
有關第1實施形態參照圖1到圖4作說明。 The first embodiment will be described with reference to FIGS. 1 to 4.
如圖1所示，有關第1實施形態的基板處理裝置10具備：基板保持平板20、旋轉機構30、處理液保持平板40、液供應部50、升降機構60、控制部70。 As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment includes a substrate holding plate 20, a rotating mechanism 30, a processing liquid holding plate 40, a liquid supply unit 50, a lifting mechanism 60, and a control unit 70.
基板保持平板20位於成為處理室的處理區塊(圖未示)的略中央附近，以水平面內旋轉可能的方式設置。該基板保持平板20具有複數個插銷等的基板保持構件21，藉由該等基板保持構件21將晶圓及液晶基板等的基板W以卸載可能的方式保持住。基板保持平板20具有作為保持基板W的基板保持部的功能。在該基板保持平板20的中央連結有柱狀的旋轉體22。此外，基板保持平板20的形狀與基板W一樣是圓形，基板保持平板20的平面大小比基板W的平面還大。 The substrate holding flat plate 20 is located near the center of a processing block (not shown) serving as a processing chamber, and is provided in a manner capable of rotating in a horizontal plane. The substrate holding flat plate 20 includes a plurality of substrate holding members 21 such as pins, and the substrate holding members 21 hold substrates W such as wafers and liquid crystal substrates in a manner capable of being unloaded. The substrate holding plate 20 has a function as a substrate holding portion that holds the substrate W. A columnar rotating body 22 is connected to the center of the substrate holding plate 20. In addition, the shape of the substrate holding flat plate 20 is circular like the substrate W, and the planar size of the substrate holding flat plate 20 is larger than that of the substrate W.
旋轉機構30具有將柱狀旋轉體22以可旋轉的方式保持的保持部及使旋轉體22旋轉的成為驅動源的馬達(圖都未示)等。該旋轉機構30在藉由馬達的驅動使旋轉體22與基板保持平板20一同旋轉。旋轉機構30電連接至控制部70，藉由控制部70來控制其驅動。 The rotating mechanism 30 includes a holding portion that rotatably holds the columnar rotating body 22, a motor (not shown) and the like that are drive sources for rotating the rotating body 22. The rotating mechanism 30 rotates the rotating body 22 together with the substrate holding plate 20 by driving the motor. The rotation mechanism 30 is electrically connected to the control section 70, and its driving is controlled by the control section 70.
處理液保持平板40設在對向於基板保持平板20上的基板W而遠離的位置，藉由升降機構60在升降機構以可移動的方式形成。處理液保持平板40具有吐出處理液S的吐出口40a。在該處理液保持平板40的周圍部，形成有在與基板保持平板20的相反側立起的壁40b。處理液保持平板40相對於基板保持平板20上的基板W以預定的間隔距離(例如，4mm以下)，在基板保持平板20上的基板W之間將處理液S保持住。處理液保持平板40藉有具有熱傳導性的材料所形成。此外，處理液保持平板40的形狀與基板W一樣是圓形，雖處理液保持平板40的平面大小可以在基板W的平面大小以上，但比基板W的平面大較佳。 The processing liquid holding plate 40 is provided at a position away from the substrate W on the substrate holding plate 20, and is formed in a movable manner by the lifting mechanism 60 in the lifting mechanism. The processing liquid holding plate 40 has a discharge port 40 a through which the processing liquid S is discharged. A wall 40 b is formed around the processing liquid holding plate 40 on the side opposite to the substrate holding plate 20. The processing liquid holding plate 40 holds the processing liquid S between the substrates W on the substrate holding plate 20 at a predetermined interval (for example, 4 mm or less) from the substrate W on the substrate holding plate 20. The treatment liquid holding plate 40 is formed of a material having thermal conductivity. In addition, the shape of the processing liquid holding flat plate 40 is circular like the substrate W. Although the planar size of the processing liquid holding flat plate 40 may be equal to or larger than that of the substrate W, it is preferably larger than that of the substrate W.
液供應部50具備：處理液供給管51、液儲留部52。處理液供給管51的一端部以貫通處理液保持平板40及加熱器41的方式設置，並固定於處理液保持平板40。該處理液供給管51的開口，作為處理液保持平板40的吐出口40a作用。液儲留部52具備儲留各種處理液(例如，純水或硫酸、過氧化氫水、氨水、磷酸等)的處理液槽(圖未示)。該液儲留部52藉由複數電磁閥等的開關，能夠從各 處理液槽將所期望的處理液S流至處理液供給管51。液儲留部52電連接至控制部70，藉由控制部70來控制其驅動。 The liquid supply section 50 includes a processing liquid supply pipe 51 and a liquid storage section 52. One end portion of the processing liquid supply pipe 51 is provided so as to penetrate the processing liquid holding plate 40 and the heater 41, and is fixed to the processing liquid holding plate 40. The opening of the processing liquid supply pipe 51 functions as a discharge port 40 a of the processing liquid holding plate 40. The liquid storage unit 52 includes a processing liquid tank (not shown) that stores various processing liquids (for example, pure water or sulfuric acid, hydrogen peroxide water, ammonia water, or phosphoric acid). The liquid storage unit 52 can be switched from each The processing liquid tank flows a desired processing liquid S to the processing liquid supply pipe 51. The liquid storage section 52 is electrically connected to the control section 70, and its driving is controlled by the control section 70.
在這裡，在與前述處理液保持平板40的基板側相反側的面，設有加熱器41，再來，設有複數(圖1的例為二個)溫度感測器42。另一方面，設於處理液保持平板40的基板側的面，撥液層43以環狀圍繞吐出口40a的方式設置。 Here, a heater 41 is provided on the surface opposite to the substrate side of the processing liquid holding plate 40, and a plurality of (two in the example of FIG. 1) temperature sensors 42 are provided. On the other hand, the liquid-repellent layer 43 is provided on the substrate-side surface of the processing liquid holding plate 40 so as to surround the discharge port 40 a in a ring shape.
加熱器41將與處理液保持平板40的基板W側相反側的面均均地加熱，將處理液保持平板40的全體維持於預定溫度。作為加熱器41，例如，可以使用片狀的加熱器。該加熱器41電連接至控制部70，藉由控制部70來控制其驅動。 The heater 41 uniformly heats the surface opposite to the substrate W side of the processing liquid holding plate 40 to maintain the entire processing liquid holding plate 40 at a predetermined temperature. As the heater 41, for example, a sheet heater can be used. The heater 41 is electrically connected to the control section 70, and its driving is controlled by the control section 70.
各溫度感測器42設於以基板保持平板20的旋轉軸A1為中心的圓周上。該等溫度感測器42電連接至控制部70，各檢出信號(檢出溫度)被發送至控制部70。控制部70因應各檢出溫度，調整加熱器41的溫度以將處理液保持平板40全體維持在預定溫度。作為溫度感測器42，例如，使用熱電偶等。 Each temperature sensor 42 is provided on a circumference centered on the rotation axis A1 of the substrate holding flat plate 20. The temperature sensors 42 are electrically connected to the control unit 70, and each detection signal (detected temperature) is transmitted to the control unit 70. The control unit 70 adjusts the temperature of the heater 41 in response to each detected temperature to maintain the entire processing liquid holding plate 40 at a predetermined temperature. As the temperature sensor 42, for example, a thermocouple or the like is used.
撥液層43如圖2所示，對應於圓形的吐出口40a的形狀而形成圓環狀，具有預定的寬度。該預定的寬度至少為基板W的半徑以下。撥液層43藉由排開處理液S的材料(例如，PFA及PTFE等的氟樹脂)所形成。該區域對於處理液S的浸潤性與其他區域相比較差，為處理液S的液 滴難以附著的區域。作為撥液層44的材料為作為隔熱材作用者較多。因此，為了從處理液保持平板40將熱傳導至處理液，期望能縮小對於處理液保持平板40的撥液層43的設置區域。 As shown in FIG. 2, the liquid-repellent layer 43 has a circular shape corresponding to the shape of the circular discharge port 40 a and has a predetermined width. The predetermined width is at least the radius of the substrate W or less. The liquid-repellent layer 43 is formed of a material (for example, a fluororesin such as PFA and PTFE) that drains the treatment liquid S. The wettability of this region to the treatment liquid S is inferior to that of other regions, and is the liquid of the treatment liquid S. Drop hard to attach area. The material of the liquid-repellent layer 44 is often used as a heat insulating material. Therefore, in order to conduct heat from the processing liquid holding plate 40 to the processing liquid, it is desirable to reduce the installation area of the liquid-repellent layer 43 for the processing liquid holding plate 40.
此外，吐出口40a其中心設於從基板保持平板20的旋轉軸A1偏移的位置(偏心)。藉此，能避免持續向基板保持平板20上的基板W的旋轉中心供應處理液S，能夠抑制該旋轉中心的基板溫度比其他處所還低。因此，因為抑制了旋轉中心的基板溫度降低而使處理液溫度部分地降低，能實現處理液溫度的均勻化。但是，吐出口40a不偏心也可以，其中心形成於基板保持平板20的旋轉軸A1上的位置也可以。 The center of the discharge port 40 a is provided at a position (eccentricity) offset from the rotation axis A1 of the substrate holding plate 20. Thereby, the continuous supply of the processing liquid S to the center of rotation of the substrate W on the substrate holding plate 20 can be avoided, and the temperature of the substrate at the center of rotation can be suppressed from being lower than other places. Therefore, the temperature of the processing liquid is partially reduced by suppressing a decrease in the temperature of the substrate at the center of rotation, thereby achieving uniform temperature of the processing liquid. However, the discharge port 40 a may not be eccentric, and the center of the discharge port 40 a may be formed on the rotation axis A1 of the substrate holding flat plate 20.
回到圖1，升降機構60具有保持處理液保持平板40的保持部及使該保持部在升降方向上移動的成為驅動源的馬達(都未圖示)等。該升降機構60藉由馬達的驅動使處理液保持平板40在升降方向上移動。升降機構60電連接至控制部70，藉由控制部70來控制其驅動。 Returning to FIG. 1, the elevating mechanism 60 includes a holding portion that holds the processing liquid holding plate 40, a motor (neither of which is shown in the figure), or the like, which is a driving source that moves the holding portion in the elevating direction. The lifting mechanism 60 moves the processing liquid holding plate 40 in the lifting direction by driving the motor. The elevating mechanism 60 is electrically connected to the control section 70, and its driving is controlled by the control section 70.
控制部70具備：將各部集中控制的微電腦、記憶有關基板處理的基板處理資訊或各種程式等的記憶部(圖都未示)。該控制部70係根據基板處理資訊或各種程式，控制旋轉機構30或加熱器41、液供應部50、升降機構60等。例如，控制部70係控制：基板保持平板20的旋轉動作及加熱器41的加熱動作、液供應部50的液供應動作、處理液保持平板40的升降動作等的各動作。 The control unit 70 includes a microcomputer that collectively controls each unit, and a memory unit (not shown) that stores substrate processing information or various programs related to substrate processing. The control unit 70 controls the rotation mechanism 30 or the heater 41, the liquid supply unit 50, the lifting mechanism 60, and the like based on substrate processing information or various programs. For example, the control unit 70 controls operations such as a rotation operation of the substrate holding plate 20 and a heating operation of the heater 41, a liquid supply operation of the liquid supply unit 50, and a lifting operation of the processing liquid holding plate 40.
接著，說明有關前述基板處理裝置10所進行的基板處理的流程。 Next, a flow of the substrate processing performed by the substrate processing apparatus 10 will be described.
首先，作為基板處理前的準備，在處理開始前將加熱器41通電，藉由該經通電後的加熱器41將與處理液保持平板40的基板W側相反側的面(上面)均勻地加熱，將處理液保持平板40全體維持於預定溫度(例如，溫度範圍100℃~400℃內的溫度)。該預定溫度為可提升處理液S的處理能力(例如，光阻除去能力)的溫度。 First, as preparation for substrate processing, the heater 41 is energized before the processing is started, and the surface 41 (upper surface) on the opposite side of the substrate W side of the processing liquid holding plate 40 is uniformly heated by the energized heater 41 The whole of the processing liquid holding plate 40 is maintained at a predetermined temperature (for example, a temperature in a temperature range of 100 ° C to 400 ° C). The predetermined temperature is a temperature that can improve the processing capability (for example, the photoresist removal capability) of the processing solution S.
接著，如圖3所示，在步驟S1中，處理液保持平板40以上升至最上位點的狀態，將處理對象基板W藉由機械手環裝置(圖未示)等搬入該處理液保持平板40與基板保持平板20之間，基板W的周圍部分藉由各基板保持構件21來保持，基板W被搬入至基板保持平板20上。此時，將基板W中心與基板保持平板20旋轉軸A1一致的方式定位。 Next, as shown in FIG. 3, in step S1, the processing liquid holding plate 40 is raised to the highest position, and the processing target substrate W is carried into the processing liquid holding plate by a robotic ring device (not shown) or the like. Between the substrate 40 and the substrate holding plate 20, a peripheral portion of the substrate W is held by each substrate holding member 21, and the substrate W is carried onto the substrate holding plate 20. At this time, the center of the substrate W is positioned so as to coincide with the rotation axis A1 of the substrate holding plate 20.
在步驟S2中，處理液保持平板40藉由升降機構60下降至與基板保持平板20上的基板W的表面之間形成預定間隙(例如，4mm以下)的位置(參照圖1)。接著，基板保持平板20藉由旋轉機構30以低速的預定速度(例如，50rpm左右)旋轉。藉此，基板W與基板保持平板20一同以前述的低速的預定速度旋轉。 In step S2, the processing liquid holding plate 40 is lowered by the lifting mechanism 60 to a position where a predetermined gap (for example, 4 mm or less) is formed between the processing liquid holding plate 40 and the surface of the substrate W on the substrate holding plate 20 (see FIG. 1). Next, the substrate holding plate 20 is rotated at a predetermined speed (for example, about 50 rpm) at a low speed by the rotation mechanism 30. Thereby, the substrate W is rotated together with the substrate holding plate 20 at the aforementioned low-speed predetermined speed.
在步驟S3中，處理液保持平板40與基板保持平板20上的基板W的間隔距離成為預定距離，基板W在以低 速的預定速度旋轉的狀態下，從處理液保持平板40的吐出口40a將處理液S供應至基板W表面。具體來說，從液儲留部52使硫酸及過氧化氫水流入處理液供給管51。此時，硫酸與過氧化氫水混合，該混合而成的處理液S通過處理液供給管51從吐出口40a被供應至旋轉的基板W表面。 In step S3, the distance between the processing liquid holding plate 40 and the substrate W on the substrate holding plate 20 becomes a predetermined distance, and the substrate W is at a low level. In a state of rotating at a predetermined speed, the processing liquid S is supplied to the surface of the substrate W from the discharge port 40 a of the processing liquid holding plate 40. Specifically, sulfuric acid and hydrogen peroxide water are caused to flow into the processing liquid supply pipe 51 from the liquid storage portion 52. At this time, sulfuric acid and hydrogen peroxide water are mixed, and the mixed processing liquid S is supplied from the discharge port 40 a to the surface of the rotating substrate W through the processing liquid supply pipe 51.
被供應至旋轉的基板W表面的處理液S，藉由基板W旋轉所產生的離心力擴散至基板W的表面全體。接著，藉由處理液S填滿處理液保持平板40與基板W表面之間的間隙，藉由處理液S的表面張力，處理液S以層狀被保持於基板W的表面(參照圖1)。該層狀的處理液S，藉由加熱器41所加熱的處理液保持平板40全體被加溫而維持於高溫(例如，溫度範圍100℃~400℃內的溫度)。接著，藉由維持於該高溫而處理能力(例如，光阻除去能力)被提高的處理液S，來處理基板W的表面。在該狀態下，若處理液S被從處理液供給管51連續地供應，基板W表面的處理液S在被置換成新的處理液S的同時也可以維持層狀的形態。到達旋轉的基板W外周部分的處理液S，從該外周部分依序作為廢液而落下。 The processing liquid S supplied to the surface of the rotating substrate W is diffused to the entire surface of the substrate W by the centrifugal force generated by the rotation of the substrate W. Next, the gap between the processing liquid holding plate 40 and the surface of the substrate W is filled with the processing liquid S, and the processing liquid S is held in a layered manner on the surface of the substrate W by the surface tension of the processing liquid S (see FIG. 1). . The layered processing liquid S is maintained at a high temperature (for example, a temperature in a temperature range of 100 ° C. to 400 ° C.) by the entire processing liquid holding plate 40 heated by the heater 41. Next, the surface of the substrate W is processed by the processing liquid S maintained at the high temperature and the processing ability (for example, the photoresist removal ability) is improved. In this state, if the processing liquid S is continuously supplied from the processing liquid supply pipe 51, the processing liquid S on the surface of the substrate W can be replaced with a new processing liquid S while maintaining a layered form. The processing liquid S reaching the outer peripheral portion of the rotating substrate W is sequentially dropped as waste liquid from the outer peripheral portion.
在這裡，隨著前述基板處理，處理液S雖被基板W奪走熱(基板W升溫)，但藉由處理液保持平板40上的加熱器41的作用，係被供應溫度降低的處理液S所降低的份的熱。該供應熱量被控制成將處理液保持平板40的溫度維持於一定。處理液S在旋轉的基板W表面上流動， 但供應至基板W上後從外周部分到流動落下期間，藉由加熱器41的溫度控制能使基板W表面不降低溫度而以同一溫度條件作處理。 Here, with the aforementioned substrate processing, although the processing liquid S is deprived of heat by the substrate W (the temperature of the substrate W is raised), the processing liquid S is supplied with the temperature-reduced processing liquid S by the effect of the heater 41 on the processing plate holding plate 40. Reduced portion heat. This supplied heat is controlled so that the temperature of the processing liquid holding plate 40 is maintained constant. The processing liquid S flows on the surface of the rotating substrate W, However, after being supplied onto the substrate W from the outer peripheral portion to the flow-down period, the temperature of the substrate 41 can be used to treat the surface of the substrate W under the same temperature condition without lowering the temperature by controlling the temperature of the heater 41.
之後，從前述處理液S的供應開始經過預定的處理時間後，處理液S的供應停止，作為下個處理液S的純水被如同前述一樣供應至基板W表面，進而洗淨基板W表面。此外，從純水的供應開始經過預定的處理時間後，純水的供應停止，作為下個處理液S，過氧化氫水、純水及氨水被混合，該混合而成的APM被供應至基板W表面。再來，從APM的供應開始經過預定的處理時間後，APM的供應停止，作為下個處理液S的純水被如同前述一樣供應至基板W表面，進而洗淨基板W表面。此時，處理液保持平板40的基板W側表面也同時藉由純水來洗淨。 Thereafter, after a predetermined processing time has elapsed from the supply of the processing liquid S, the supply of the processing liquid S is stopped, and pure water as the next processing liquid S is supplied to the surface of the substrate W as described above, and the surface of the substrate W is washed. In addition, after a predetermined processing time has elapsed from the supply of pure water, the supply of pure water is stopped. As the next processing liquid S, hydrogen peroxide water, pure water, and ammonia water are mixed, and the mixed APM is supplied to the substrate. W surface. Further, after a predetermined processing time has passed from the supply of APM, the supply of APM is stopped, and pure water as the next processing liquid S is supplied to the surface of the substrate W as described above, and the surface of the substrate W is washed. At this time, the substrate W-side surface of the processing liquid holding plate 40 is also washed with pure water at the same time.
在步驟S4中，前述純水所進行的第2次洗淨處理結束後，如圖4所示，處理液S維持從處理液供給管51吐出的狀態，處理液保持平板40藉由升降機構60上升至最上位點，之後，處理液S的供應停止。此時，處理液供給管51內成為負壓，能抑制液滴從吐出口40a落下至基板保持平板20上的基板W表面。 In step S4, after the second washing process by the pure water is completed, as shown in FIG. 4, the processing liquid S maintains a state of being discharged from the processing liquid supply pipe 51, and the processing liquid holding plate 40 is lifted by the lifting mechanism 60. After rising to the highest position, the supply of the processing liquid S is stopped. At this time, the inside of the processing liquid supply pipe 51 becomes a negative pressure, and it is possible to suppress the drop of liquid droplets from the discharge port 40 a to the surface of the substrate W on the substrate holding plate 20.
此外，當處理液保持平板40上升時，處理液S持續流動。這是因為在處理液保持平板40上升時，附著於處理液保持平板40的基板W側表面的液滴即使落下，也使基板表面存在處理液S的層而抑制水印的產生，再來，也為了抑制對於處理液保持平板40的基板W的貼附。 In addition, when the processing liquid holding plate 40 is raised, the processing liquid S continues to flow. This is because when the processing liquid holding plate 40 rises, even if the droplets attached to the substrate W side surface of the processing liquid holding plate 40 fall, a layer of the processing liquid S is present on the substrate surface to suppress the generation of watermarks. In order to suppress adhesion of the substrate W to the processing liquid holding plate 40.
在此，前述處理液保持平板40的實際溫度變化依存於處理液S的溫度。將過氧化氫水與硫酸的混合液作為處理液S時，在高溫處理(100℃~400℃內的溫度)中，處理液保持平板40的熱被供應至混合液。處理液保持平板40的熱雖被混合液奪走，但因為混合液因混合時所生的反應熱而為高溫，從處理液保持平板40被奪走的熱小，處理液保持平板40的溫度並不會降低太多。此外，混合液也會藉由加熱器等的加熱裝置預先加熱而供應。另一方面，將純水(例如，25℃)作為處理液S時，處理液保持平板40與純水的溫度差大，處理液保持平板40的熱被純水奪走。也就是說，在預定時間，處理液保持平板40的基板W側的表面與純水接觸的話，處理液保持平板40的溫度大大地降低，處理液保持平板40的溫度成為90℃~100℃左右。之後，處理液保持平板40上升後，處理液保持平板40的基板W側表面雖下降至純水的液滴存在所造成的溫度，但因應加熱器41所加溫的熱傳導至處理液保持平板40的基板W側表面，附著於該表面的液滴漸漸地蒸發。 Here, the actual temperature change of the processing liquid holding plate 40 depends on the temperature of the processing liquid S. When a mixed liquid of hydrogen peroxide water and sulfuric acid is used as the processing liquid S, the heat of the processing liquid holding flat plate 40 is supplied to the mixed liquid during high-temperature processing (temperature within 100 ° C. to 400 ° C.). Although the heat of the processing liquid holding plate 40 is taken away by the mixed liquid, the mixed liquid is high in temperature due to the reaction heat generated during mixing. The heat taken away from the processing liquid holding plate 40 is small, and the processing liquid holds the temperature of the plate 40. It doesn't decrease too much. In addition, the mixed liquid is also supplied in advance by a heating device such as a heater. On the other hand, when pure water (for example, 25 ° C.) is used as the processing liquid S, the temperature difference between the processing liquid holding plate 40 and the pure water is large, and the heat of the processing liquid holding plate 40 is taken away by the pure water. That is, if the surface of the substrate W side of the processing liquid holding plate 40 comes in contact with pure water at a predetermined time, the temperature of the processing liquid holding plate 40 is greatly reduced, and the temperature of the processing liquid holding plate 40 becomes about 90 ° C to 100 ° C. . Thereafter, after the processing liquid holding plate 40 rises, the substrate W side surface of the processing liquid holding plate 40 drops to a temperature caused by the presence of droplets of pure water, but the heat transmitted by the heater 41 is transmitted to the processing liquid holding plate 40 On the surface of the substrate W side, the droplets adhering to this surface gradually evaporate.
在步驟S5中，基板保持平板20藉由旋轉機構30以高速(例如，1500rpm左右)旋轉。藉此，基板W與基板保持平板20一同以高速旋轉。若基板W以高速旋轉的話，基板W上所殘留的水分會因離心力而飛散，基板W上的水分被除去。 In step S5, the substrate holding plate 20 is rotated at a high speed (for example, about 1500 rpm) by the rotation mechanism 30. Thereby, the substrate W and the substrate holding plate 20 rotate at high speed. When the substrate W is rotated at a high speed, the moisture remaining on the substrate W is scattered by the centrifugal force, and the moisture on the substrate W is removed.
在步驟S6中，前述基板W的乾燥處理結束後，基板 保持平板20的旋轉停止，保持在基板保持平板20上的處理完的基板W藉由機械手環裝置(圖未示)等來搬出。以後，依序對基板W依與前述同樣的順序(步驟S1~S6)，來執行處理。 In step S6, after the drying process of the substrate W is completed, the substrate The rotation of the holding plate 20 is stopped, and the processed substrate W held on the substrate holding plate 20 is carried out by a robotic ring device (not shown) or the like. Thereafter, the substrate W is sequentially processed in the same order as described above (steps S1 to S6).
根據前述的基板處理工程，處理液保持平板40藉由加熱器41均勻地加熱，處理液S被層狀保持在於基板保持平板20被保持的基板W表面，該層狀處理液S全體藉由處理液保持平板40來加熱。藉此，處理液S能更有效率地加熱。再來，因為層狀處理液S以常時保持於基板W表面的狀態來處理基板W表面，能不浪費而有效率地使用該處理液S來處理基板W的表面。 According to the aforementioned substrate processing process, the processing liquid holding plate 40 is uniformly heated by the heater 41, and the processing liquid S is held in a layer on the surface of the substrate W held by the substrate holding plate 20, and the entire layered processing liquid S is processed by The liquid holding plate 40 is heated. Thereby, the processing liquid S can be heated more efficiently. Furthermore, since the layered processing liquid S is used to process the surface of the substrate W while being kept on the surface of the substrate W, the surface of the substrate W can be efficiently processed using the processing liquid S without waste.
此外，如圖4所示，處理液保持平板40從基板W表面遠離，在供應處理液S(純水)期間或供應停止時等，從吐出口40a吐出的處理液S，藉由吐出口40a周邊的撥液層43而被抑制附著於吐出口40a周圍。也就是說，因為自體抑制了在吐出口40a周圍液滴(處理液S)的附著，附著於吐出口40a周圍的液滴，會因為處理液保持平板40的傾斜或氣流等而移動，與處理液保持平板40的基板W側表面附著的蒸發前的其他液滴接觸而一體化，能夠抑制其落下於基板W表面。再來，處理液S的供應停止後，附著於處理液供給管51壁面的液從吐出口40a流出至處理液保持平板40的基板W側表面，與處理液保持平板40的基板W側表面附著的蒸發前的其他液滴接觸而一體化，能夠抑制其落下於基板W表面。 In addition, as shown in FIG. 4, the processing liquid S keeps the flat plate 40 away from the surface of the substrate W, and the processing liquid S is discharged from the discharge port 40 a during the supply of the processing liquid S (pure water) or when the supply is stopped, etc. The peripheral liquid-repellent layer 43 is suppressed from adhering to the periphery of the discharge port 40a. In other words, since the adhesion of the droplets (treatment liquid S) around the discharge port 40a is suppressed by itself, the droplets attached to the periphery of the discharge port 40a move due to the treatment solution maintaining the inclination or air flow of the flat plate 40, and The other droplets before evaporation adhered to the substrate W side surface of the processing liquid holding plate 40 are brought into contact with and integrated with each other, and can be prevented from falling on the substrate W surface. After the supply of the processing liquid S is stopped, the liquid adhered to the wall surface of the processing liquid supply pipe 51 flows out from the discharge port 40 a to the substrate W side surface of the processing liquid holding plate 40 and adheres to the substrate W side surface of the processing liquid holding plate 40. Other droplets before evaporation are brought into contact with each other and integrated, so that they can be prevented from falling on the surface of the substrate W.
在這裡，處理液S的供應停止後，附著於處理液供給管51壁面的液，也會受到重力而沿著處理液供給管51的壁面向吐出口40a流動，從吐出口40a流出至處理液保持平板40的基板W側表面。該流出的液與處理液保持平板40的基板W側表面附著的蒸發前的其他液滴接觸而一體化，會落下至基板W表面。這是對於結束處理的基板W表面來說，成為水印等品質不良的原因。此外，處理液S的供應停止後，即便使處理液供給管51內為負壓，也會附著於處理液供給管51的壁面的液沿著該壁面向吐出口40a流動，從吐出口40a流出至處理液保持平板40的基板W側表面。 Here, after the supply of the processing liquid S is stopped, the liquid adhering to the wall surface of the processing liquid supply pipe 51 also receives gravity and flows along the wall surface of the processing liquid supply pipe 51 to the discharge port 40a, and flows out from the discharge port 40a to the processing liquid. The substrate W side surface of the flat plate 40 is held. This flowing-out liquid is integrated with other droplets before evaporation that adhere to the substrate W-side surface of the processing liquid holding plate 40 and falls on the substrate W surface. This is a cause of poor quality such as watermarking on the surface of the substrate W after the processing is completed. In addition, after the supply of the processing liquid S is stopped, even if the inside of the processing liquid supply pipe 51 is brought to a negative pressure, the liquid adhering to the wall surface of the processing liquid supply pipe 51 flows along the wall surface toward the discharge port 40a and flows out from the discharge port 40a. To the substrate W side surface of the processing liquid holding plate 40.
如以上所說明的，根據第1實施形態，藉由在處理液保持平板40的基板W側表面設置環狀圍繞處理液保持平板40的吐出口40a的撥液層43，能抑制處理液S在吐出口40a的周圍作為液滴而附著、或從吐出口40a向處理液保持平板40的基板W側的表面流出。藉此，因為能夠抑制從處理液保持平板40向基板W表面的液滴落下，能夠抑制水印等的品質不良的產生。 As described above, according to the first embodiment, by providing the liquid-repellent layer 43 annularly surrounding the discharge port 40a of the processing liquid holding plate 40 on the substrate W side surface of the processing liquid holding plate 40, it is possible to suppress the The periphery of the discharge port 40a adheres as a droplet, or flows out from the discharge port 40a to the surface of the substrate W side of the processing liquid holding plate 40. Thereby, it is possible to suppress the drop of liquid droplets from the processing liquid holding plate 40 to the surface of the substrate W, and it is possible to suppress the occurrence of quality defects such as watermarks.
有關第2實施形態參照圖5作說明。此外，在第2實施形態中僅說明與第1實施形態的相異點(撥液層的大小)，省略其他說明。 The second embodiment will be described with reference to FIG. 5. In the second embodiment, only the differences from the first embodiment (the size of the liquid-repellent layer) will be described, and other descriptions will be omitted.
如圖5所示，有關第2實施形態的撥液層43a係形成 圓環狀。該圖環狀的撥液層43a包含：吐出口40a、及旋轉軸A1通過的位置，且形成比各溫度感測器42還位於基板W的內側的大小。圓環狀的撥液層43a的半徑比第1實施形態還大，作為一例，為處理液保持平板40的半徑以下。這種圓環狀的撥液層43a與第1實施形態相比，因為遠離處理液保持平板40的吐出口40a，藉由從吐出口40a吐出的處理液S，能夠抑制撥液層43a的邊緣部剝離、損傷。 As shown in FIG. 5, the liquid-repellent layer 43a according to the second embodiment is formed. Toroidal. In the figure, the annular liquid-repellent layer 43 a includes a discharge port 40 a and a position through which the rotation axis A1 passes, and is formed to be larger than each temperature sensor 42 on the inside of the substrate W. The radius of the annular liquid-repellent layer 43a is larger than that of the first embodiment, and as an example, the radius of the flat plate 40 is held by the treatment liquid. Compared with the first embodiment, the annular liquid-repellent layer 43a is far from the discharge port 40a of the processing liquid holding plate 40, and the edge of the liquid-repellent layer 43a can be suppressed by the processing liquid S discharged from the discharge port 40a. Part peeling and damage.
如以上的說明，根據第2實施形態，可以得到與第1實施形態一樣的效果。再來，與第1實施形態相比，因為將環狀的撥液層43a的至少一部分遠離吐出口40a，能夠抑制因處理液S而造成的撥液層43a的剝離或損傷發生。 As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. Furthermore, compared with the first embodiment, at least a part of the ring-shaped liquid-repellent layer 43a is spaced away from the discharge port 40a, so that peeling or damage of the liquid-repellent layer 43a caused by the treatment liquid S can be suppressed.
有關第3實施形態參照圖6及圖7作說明。此外，在第3實施形態中僅說明與第1實施形態的相異點(撥液層的設置位置)，省略其他說明。 The third embodiment will be described with reference to FIGS. 6 and 7. In addition, in the third embodiment, only the differences from the first embodiment (the position where the liquid-repellent layer is provided) will be described, and other descriptions will be omitted.
如圖6及圖7所示，有關第3實施形態的撥液層44係在處理液保持平板40的基板W側之面對向溫度感測器42而設置，並形成圓環狀。此外，撥液層45也在處理液保持平板40的基板W側之面對向溫度感測器42而設置，並形成圓環狀。此外，在第3實施形態中，雖不設置有關第1實施形態的撥液層43，但不以此為限，一同設置也可以。 As shown in FIGS. 6 and 7, the liquid-repellent layer 44 according to the third embodiment is provided on the substrate W side of the processing liquid holding plate 40 and faces the temperature sensor 42, and is formed in a ring shape. In addition, the liquid-repellent layer 45 is also provided on the substrate W side of the processing-liquid holding plate 40 to face the temperature sensor 42, and is formed in a ring shape. In addition, in the third embodiment, although the liquid-repellent layer 43 according to the first embodiment is not provided, it is not limited thereto, and they may be provided together.
環狀的撥液層44、45在圖7的平面視時，以包圍分別對應的溫度感測器42的測溫位置的方式形成。根據該等環狀撥液層44、45，當處理液保持平板40為石英等透明或半透明構件時，能從處理液保持平板40的基板W側表面視認溫度感測器42的測溫位置。此外，因為溫度感測器42的正下方沒有形成撥液層44、45，處理液的溫度能簡單地被溫度感測器42檢出。 The ring-shaped liquid-repellent layers 44 and 45 are formed so as to surround the temperature measurement positions of the corresponding temperature sensors 42 when viewed in plan view in FIG. 7. According to the annular liquid-repellent layers 44 and 45, when the processing liquid holding plate 40 is a transparent or translucent member such as quartz, the temperature measurement position of the temperature sensor 42 can be viewed from the substrate W side surface of the processing liquid holding plate 40. . In addition, because the liquid-repellent layers 44 and 45 are not formed directly below the temperature sensor 42, the temperature of the processing liquid can be easily detected by the temperature sensor 42.
此外，撥液層44、45的環狀並不限於圓形，楕圓或長方形等的形狀也可以。此外，撥液層44、45並不一定要是環狀，在圖7的平面視時，以覆蓋溫度感測器42的測溫位置的圓或楕圓、長方形等的形狀形成也可以。 The ring shape of the liquid-repellent layers 44 and 45 is not limited to a circular shape, and a shape such as a round shape or a rectangular shape may be used. In addition, the liquid-repellent layers 44 and 45 do not necessarily need to be ring-shaped, and they may be formed in a shape such as a circle, a circle, or a rectangle covering the temperature-measuring position of the temperature sensor 42 when viewed in plan view in FIG. 7.
撥液層44、45與第1實施形態一樣，藉由排開處理液S的材料(例如，PFA及PTFE等的氟樹脂)所形成。該等區域對於處理液S的浸潤性與其他區域相比較差，為處理液S的液滴難以附著的區域。作為撥液層44、45的材料為作為隔熱材作用者較多。因此，為了從處理液保持平板40將熱傳導至處理液，期望能縮小對於處理液保持平板40的撥液層44、45的設置區域。 As in the first embodiment, the liquid-repellent layers 44 and 45 are formed of a material (for example, a fluororesin such as PFA and PTFE) that drains the treatment liquid S. These regions are inferior to other regions in terms of wettability with respect to the treatment liquid S, and are regions in which droplets of the treatment liquid S are difficult to adhere. The materials used as the liquid-repellent layers 44 and 45 are often used as heat-insulating materials. Therefore, in order to conduct heat from the processing liquid holding plate 40 to the processing liquid, it is desirable to reduce the installation area of the liquid-repellent layers 44 and 45 for the processing liquid holding plate 40.
如同前述環狀的撥液層44、45也在處理液保持平板40的基板W側之面，以圍繞對向於溫度感測器42的檢出位置的方式設置。藉此，因為抑制了在吐出口40a周圍或環狀的撥液層44、45外部區域附著的液滴、或從吐出口40a流出至處理液保持平板40的基板W側的液侵入環狀的撥液層44、45的內部區域(環內的區域)，能夠抑制液 滴附著在對向於各溫度感測器42的檢出位置，而能夠防止液滴所造成誤檢測。也就是說，溫度感測器42能正確地測定處理液保持平板40的溫度。此外，也能夠抑制因誤檢測所造成的加熱溫度的不穩定的控制。因此，能夠使加熱器41的溫度控制穩定，能將處理液溫度維持在所期望溫度。 The ring-shaped liquid-repellent layers 44 and 45 are also provided on the surface of the substrate W side of the processing liquid holding plate 40 as described above so as to surround the detection position facing the temperature sensor 42. This prevents the liquid droplets adhering around the discharge port 40a or the outer area of the ring-shaped liquid-repellent layers 44 and 45, or the liquid flowing from the discharge port 40a to the substrate W side of the processing liquid holding plate 40 from entering the ring-shaped The inner regions (regions inside the ring) of the liquid-repellent layers 44 and 45 can suppress the liquid The droplets are attached to the detection positions facing the respective temperature sensors 42 to prevent false detection caused by the droplets. That is, the temperature sensor 42 can accurately measure the temperature of the processing liquid holding plate 40. In addition, it is possible to suppress unstable control of the heating temperature due to erroneous detection. Therefore, the temperature control of the heater 41 can be stabilized, and the temperature of the processing liquid can be maintained at a desired temperature.
此外，當處理液保持平板40上升時，即便處理液保持平板40的環狀撥液層44、45內附著有液滴，也會因處理液保持平板40的加熱而漸漸地變小而蒸發。在該乾燥後，也因為藉由環狀的撥液層44、45抑制了在吐出口40a周圍或環狀的撥液層44、45外部區域附著的液滴、或從吐出口40a流出至處理液保持平板40的基板W側的液侵入環狀的撥液層44、45的內部區域，能夠抑制液滴附著在檢出位置，而能夠防止液滴所造成誤檢測。 In addition, when the treatment liquid holding plate 40 is raised, even if droplets adhere to the ring-shaped liquid-repellent layers 44 and 45 of the treatment liquid holding plate 40, the treatment liquid holding plate 40 gradually becomes smaller and evaporates due to the heating of the treatment liquid holding plate 40. After the drying, the liquid-repellent layers 44 and 45 are also used to suppress the droplets adhering to the periphery of the discharge port 40a or the outer area of the annular liquid-repellent layers 44 and 45, or to flow out from the discharge port 40a to the treatment. The liquid on the substrate W side of the liquid holding plate 40 intrudes into the inner regions of the annular liquid-repellent layers 44 and 45 to prevent the liquid droplets from attaching to the detection position, and to prevent false detection caused by the liquid droplets.
如以上所說明的，根據第3實施形態，藉由在處理液保持平板40的基板W側之面設置對向於各溫度感測器42的環狀的撥液層44、45，因為抑制了在吐出口40a周圍或環狀的撥液層44、45外部區域附著的液滴、或從吐出口40a流出至處理液保持平板40的基板W側的液侵入環狀的撥液層44、45的內部區域，而抑制了於對向於各溫度感測器42的檢出位置的液滴附著，溫度感測器42能正確地測定處理液保持平板40的溫度。因此，能夠使處理液保持平板40的溫度，也就是加熱溫度的控制穩定。作為結果，能夠將處理液溫度維持在所期望溫度，能抑制處 理不足等的品質不良的發生。 As described above, according to the third embodiment, the ring-shaped liquid-repellent layers 44 and 45 facing the temperature sensors 42 are provided on the surface of the substrate W side of the processing liquid holding plate 40 because the liquid-repellent layers 44 and 45 are suppressed. Liquid droplets adhered to the periphery of the discharge port 40a or outside the ring-shaped liquid-repellent layers 44, 45, or liquid flowing out of the discharge port 40a to the substrate W side of the processing liquid holding plate 40 penetrates the ring-shaped liquid-repellent layers 44, 45 In the internal region of the sensor, the adhesion of the liquid droplets to the detection position of each temperature sensor 42 is suppressed, and the temperature sensor 42 can accurately measure the temperature of the processing liquid holding plate 40. Therefore, the temperature of the flat plate 40 can be maintained by the processing liquid, that is, the control of the heating temperature can be stabilized. As a result, the temperature of the processing liquid can be maintained at a desired temperature, and the temperature can be suppressed. Poor quality such as inadequate management.
此外，也可將第3實施形態與第1實施形態或第2實施形態作組合。也就是說，藉由在吐出口40a的周圍設置撥液層43、43a，在溫度感測器42的周圍設置撥液層44、45，能夠防止處理液附著於吐出口40a的周圍或溫度感測器42的檢出位置。 The third embodiment may be combined with the first embodiment or the second embodiment. That is, by providing the liquid-repellent layers 43 and 43a around the discharge port 40a and the liquid-repellent layers 44 and 45 around the temperature sensor 42, it is possible to prevent the treatment liquid from adhering to the surroundings of the discharge port 40a or the sense of temperature. The detection position of the detector 42.
有關第4實施形態參照圖8作說明。此外，在第4實施形態中僅說明與第1實施形態的相異點(撥液層的設置位置)，省略其他說明。 The fourth embodiment will be described with reference to FIG. 8. In addition, in the fourth embodiment, only the differences from the first embodiment (positions of the liquid-repellent layers) will be described, and other descriptions will be omitted.
如圖8所示，有關第4實施形態的撥液層46設置在處理液保持平板40的基板W側的表面上不與基板W對向的區域，形成圓環狀。此外，撥液層47也在處理液保持平板40的外周面(側面)設置，並形成圓環狀。 As shown in FIG. 8, the liquid-repellent layer 46 according to the fourth embodiment is provided in a region on the surface of the substrate W side of the processing liquid holding plate 40 that does not face the substrate W, and has a circular shape. In addition, the liquid-repellent layer 47 is also provided on the outer peripheral surface (side surface) of the treatment liquid holding plate 40 and is formed in a circular shape.
撥液層46、47與第1實施形態一樣，藉由排開處理液S的材料(例如，PFA及PTFE等的氟樹脂)所形成。該等區域對於處理液S的浸潤性與其他區域相比較差，為處理液S的液滴難以附著的區域。作為撥液層46、47的材料為作為隔熱材作用者較多。因此，在處理液保持平板40不與基板W對向的區域設置撥液層46、47。 As in the first embodiment, the liquid-repellent layers 46 and 47 are formed of a material (for example, a fluororesin such as PFA and PTFE) that drains the treatment liquid S. These regions are inferior to other regions in terms of wettability with respect to the treatment liquid S, and are regions in which droplets of the treatment liquid S are difficult to adhere. The materials used as the liquid-repellent layers 46 and 47 are often used as heat-insulating materials. Therefore, the liquid-repellent layers 46 and 47 are provided in a region where the processing liquid holding plate 40 does not face the substrate W.
在這裡，當沒有撥液層46、47時，也有處理液S的液滴附著於處理液保持平板40的基板W側表面上不與基板W對向的外周區域或處理液保持平板40的外周面的情 形。處理液保持平板40的外周部分(前述外周區域或外周面)因為不直接與加熱器41連接(來自加熱器41的熱難以到達處理液保持平板40的外周部分)，此外，因為接觸空氣而容易變冷，會有附著於該外周部分的液滴難以蒸發的情形。該液滴在藉由機械手環裝置(圖未示)將基板W搬入時，或搬出時的動作及振動等所致而落下至基板W表面的話，會產生水印等的品質不良。 Here, when the liquid-repellent layers 46 and 47 are not present, droplets of the processing liquid S also adhere to the outer peripheral area of the substrate W side surface of the processing liquid holding plate 40 that does not face the substrate W or the outer periphery of the processing liquid holding plate 40. Love shape. The outer peripheral portion (the outer peripheral area or the outer peripheral surface) of the treatment liquid holding plate 40 is not directly connected to the heater 41 (heat from the heater 41 is difficult to reach the outer peripheral portion of the treatment liquid holding plate 40), and is easy to contact with air. If it becomes cold, the liquid droplets adhering to the outer peripheral portion may be difficult to evaporate. When the droplets fall onto the surface of the substrate W due to movement, vibration, and the like when the substrate W is carried in by a robotic ring device (not shown), a watermark or the like may be defective.
不過，像前述那樣在外周區域或外周面設置撥液層46、47，因為可以抑制液滴附著於外周區域或外周面，能抑制液適落下所產生的品質不良。 However, as described above, the liquid-repellent layers 46 and 47 are provided on the outer peripheral area or the outer peripheral surface, because it is possible to suppress the liquid droplets from adhering to the outer peripheral area or the outer peripheral surface, and it is possible to suppress the poor quality caused by the liquid falling appropriately.
如以上的說明，根據第4實施形態，可以得到與第1實施形態一樣的效果。再來，處理液S的液滴因為撥液層46、47設置於處理液保持平板40的基板W側表面上不與基板W對向的外周區域或處理液保持平板40的外周面，可以抑制液滴附著於該外周區域或外周面，能抑制水印等的品質不良的發生。 As described above, according to the fourth embodiment, the same effects as those of the first embodiment can be obtained. Furthermore, since the liquid-repellent layers 46 and 47 are disposed on the outer surface of the substrate W side surface of the treatment liquid holding plate 40 that does not face the substrate W or the outer peripheral surface of the treatment liquid holding plate 40, the liquid droplets 46 and 47 can be suppressed The droplets adhere to the outer peripheral area or the outer peripheral surface, and can suppress the occurrence of poor quality such as a watermark.
此外，僅將撥液層設置於處理液保持平板40的基板W側表面上不與基板W對向的外周區域及處理液保持平板40的外周面的任一方也可以。此外，也可將第4實施形態與第1實施形態、第2實施形態或第3實施形態等作組合。 The liquid-repellent layer may be provided on only one of the outer peripheral area of the processing liquid holding plate 40 on the substrate W side surface that does not face the substrate W and the outer peripheral surface of the processing liquid holding plate 40. The fourth embodiment may be combined with the first embodiment, the second embodiment, the third embodiment, and the like.
在前述各實施形態中，在進行最初的處理(例如，光 阻除去處理)後，雖例示了用純水的洗淨處理、用APM的洗淨處理、再用純水進行3次的洗淨處理，但並不以此為限，例如，也可以省略APM的洗淨處理或1次的純水洗淨處理等，該處理的內容或次數並沒有特別的限定。 In each of the foregoing embodiments, the first processing (for example, light Resistance removal treatment), although the washing treatment with pure water, the washing treatment with APM, and the washing treatment with pure water three times are exemplified, it is not limited to this, for example, APM may be omitted There is no particular limitation on the content or the number of times of the washing process or the pure water washing process.
此外，在前述各實施形態中，雖例示了將處理液S連續供應至處理液保持平板40與基板W表面之間，但並不以此為限，例如，將處理液S保持於處理液保持平板40與基板W表面之間的狀態下，停止處理液S的供應也可以。例如，在使用當超過預定溫度而急速地提高處理能力的特性的處理液S的情形等時，將處理液S保持於處理液保持平板40與基板W表面之間的狀態下，停止處理液S的供應較佳。此時，停止處理液S的新供應，在基板W表面上不置換處理液S而留下之，此期間加熱的處理液S會超過前述預定溫度。 In addition, in each of the foregoing embodiments, the supply of the processing liquid S between the processing liquid holding plate 40 and the surface of the substrate W is exemplified, but the invention is not limited to this. For example, the processing liquid S is held by the processing liquid holding. In a state between the flat plate 40 and the surface of the substrate W, the supply of the processing liquid S may be stopped. For example, when using a processing liquid S that rapidly increases the characteristics of the processing capacity when the temperature exceeds a predetermined temperature, the processing liquid S is stopped while the processing liquid S is held between the processing liquid holding plate 40 and the surface of the substrate W. The supply is better. At this time, the new supply of the processing liquid S is stopped, and the processing liquid S is left on the surface of the substrate W without being replaced. During this period, the processing liquid S heated will exceed the aforementioned predetermined temperature.
此外，在前述各實施形態中，雖例示了將各溫度感測器42設於與處理液保持平板40的基板側相反側之面，但並不以此為限，例如，將各溫度感測器42設於處理液保持平板40的內部，將處理液保持平板40內藏於各溫度感測器42也可以。 In addition, in the foregoing embodiments, the temperature sensors 42 are exemplified as being provided on the surface opposite to the substrate side of the processing liquid holding plate 40, but the invention is not limited thereto. For example, each temperature sensor The device 42 is provided inside the processing liquid holding plate 40, and the processing liquid holding plate 40 may be embedded in each temperature sensor 42.
以上，雖已說明了本發明的幾個實施形態，但該等實施形態僅作為例示，並沒有要限定本發明的範圍。該等新穎的實施形態，也可以利用於其他各種形態來實施，在不脫離發明要旨的範圍內，可以進行各種省略、置換、變更。該等實施形態及其變形，在包含於發明的範圍及要旨 中的同時，也包含申請專利範圍中所記載之發明的均等範圍。 Although several embodiments of the present invention have been described above, these embodiments are merely examples and are not intended to limit the scope of the present invention. These novel embodiments can also be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and their modifications are included in the scope and gist of the invention. At the same time, it also includes the equivalent scope of the inventions described in the scope of patent applications.
10‧‧‧基板處理裝置 10‧‧‧ substrate processing equipment
20‧‧‧基板保持平板 20‧‧‧ substrate holding plate
21‧‧‧基板保持構件 21‧‧‧ substrate holding member
22‧‧‧旋轉體 22‧‧‧rotating body
30‧‧‧旋轉機構 30‧‧‧ rotating mechanism
40‧‧‧處理液保持平板 40‧‧‧ treatment liquid keep flat
40a‧‧‧吐出口 40a‧‧‧Eject
40b‧‧‧壁 40b‧‧‧wall
41‧‧‧加熱器 41‧‧‧heater
42‧‧‧溫度感測器 42‧‧‧Temperature sensor
43‧‧‧撥液層 43‧‧‧Liquid layer
50‧‧‧液供應部 50‧‧‧Liquid Supply Department
51‧‧‧處理液供給管 51‧‧‧ treatment liquid supply pipe
52‧‧‧液儲留部 52‧‧‧Liquid storage department
60‧‧‧升降機構 60‧‧‧Lifting mechanism
70‧‧‧控制部 70‧‧‧Control Department
A1‧‧‧旋轉軸 A1‧‧‧rotation shaft
S‧‧‧處理液 S‧‧‧treatment fluid
W‧‧‧基板 W‧‧‧ substrate
Claims (12)
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| JP2017011410A JP6903441B2 (en) | 2016-03-31 | 2017-01-25 | Board processing equipment |
| JP2017-011410 | 2017-01-25 |
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| JP2002075947A (en) * | 2000-08-30 | 2002-03-15 | Alps Electric Co Ltd | Wet processor |
| JP2002343759A (en) * | 2001-05-21 | 2002-11-29 | Tokyo Electron Ltd | Liquid treatment apparatus and method therefor |
| JP2003051477A (en) * | 2001-08-08 | 2003-02-21 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP4410119B2 (en) * | 2005-02-03 | 2010-02-03 | 東京エレクトロン株式会社 | Cleaning device, coating, developing device and cleaning method |
| WO2006129505A1 (en) * | 2005-06-03 | 2006-12-07 | Konica Minolta Holdings, Inc. | Liquid jetting device and liquid jetting method |
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