JP6903441B2 - Board processing equipment - Google Patents

Board processing equipment Download PDF

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JP6903441B2
JP6903441B2 JP2017011410A JP2017011410A JP6903441B2 JP 6903441 B2 JP6903441 B2 JP 6903441B2 JP 2017011410 A JP2017011410 A JP 2017011410A JP 2017011410 A JP2017011410 A JP 2017011410A JP 6903441 B2 JP6903441 B2 JP 6903441B2
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substrate
treatment liquid
holding plate
liquid holding
liquid
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JP2017188657A (en
JP2017188657A5 (en
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古矢　正明
正明 古矢
森　秀樹
秀樹 森
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to KR1020170027596A priority Critical patent/KR101921818B1/en
Priority to TW106108367A priority patent/TWI681451B/en
Priority to CN201710200850.XA priority patent/CN107275258B/en
Publication of JP2017188657A publication Critical patent/JP2017188657A/en
Priority to KR1020180119702A priority patent/KR102265170B1/en
Publication of JP2017188657A5 publication Critical patent/JP2017188657A5/ja
Priority to JP2021104140A priority patent/JP7106723B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

Description

本発明の実施形態は、基板処理装置に関する。 Embodiments of the present invention relate to a substrate processing apparatus.

基板処理装置は、半導体や液晶パネルなどの製造工程において、ウェーハや液晶基板などの基板表面に処理液（例えば、レジスト剥離液や洗浄液など）を供給し、基板表面を処理する装置である。この基板処理装置としては、基板処理効率向上のため、回転する基板上の処理液を加熱し、その処理液の性質や熱量を利用して基板表面を処理する枚葉式の基板処理装置が提案されている。 A substrate processing apparatus is an apparatus for processing a substrate surface by supplying a processing liquid (for example, a resist stripping liquid, a cleaning liquid, etc.) to a substrate surface such as a wafer or a liquid crystal substrate in a manufacturing process of a semiconductor or a liquid crystal panel. As this substrate processing device, in order to improve the substrate processing efficiency, a single-wafer type substrate processing device that heats a processing liquid on a rotating substrate and processes the substrate surface by utilizing the properties and heat amount of the processing liquid is proposed. Has been done.

この枚葉式の基板処理装置において、基板表面を均一に処理するためには、基板表面上の液温を均一にすることが重要となる。そこで、基板表面に対向して離れた位置に処理液保持プレートが設けられ、この処理液保持プレートがヒータにより加熱される。そして、このとき、基板表面と処理液保持プレートとの間（例えば、数ｍｍ）に存在する処理液は、処理液保持プレートにより均一に温められる。 In this single-wafer type substrate processing apparatus, in order to uniformly process the substrate surface, it is important to make the liquid temperature on the substrate surface uniform. Therefore, a treatment liquid holding plate is provided at a position facing the substrate surface and away from the substrate surface, and the treatment liquid holding plate is heated by the heater. At this time, the treatment liquid existing between the substrate surface and the treatment liquid holding plate (for example, several mm) is uniformly warmed by the treatment liquid holding plate.

詳しくは、処理液保持プレートには処理液供給管が貫通するように設けられており、処理液供給管の開口から処理液が吐出される。処理液はその吐出口から基板表面に供給され、処理液保持プレートと基板表面との隙間に広がり、その隙間に保持されることになる。この処理液が、ヒータにより加熱された処理液保持プレートによって温められる。なお、処理液保持プレートは、昇降方向に移動可能に設けられている。また、処理液保持プレートの基板側と反対側の表面には、温度センサ（例えば、熱電対など）が設けられている。 Specifically, the treatment liquid holding plate is provided so as to penetrate the treatment liquid supply pipe, and the treatment liquid is discharged from the opening of the treatment liquid supply pipe. The treatment liquid is supplied to the substrate surface from the discharge port, spreads in the gap between the treatment liquid holding plate and the substrate surface, and is held in the gap. This treatment liquid is warmed by the treatment liquid holding plate heated by the heater. The treatment liquid holding plate is provided so as to be movable in the elevating direction. Further, a temperature sensor (for example, a thermocouple or the like) is provided on the surface of the processing liquid holding plate opposite to the substrate side.

この基板処理装置では、基板処理完了後、処理液保持プレートを上昇させて基板表面から遠ざける際にも、吐出口から処理液を吐出し続ける。これは、処理液保持プレートの基板側の表面に付着した液滴が落下しても、基板表面に処理液の層を存在させてウォーターマークが発生することを抑えるためである。なお、処理液保持プレートが所定の処理位置から上昇した状態において、処理液保持プレートの基板側の表面に付着した液滴の多くは、処理液保持プレートによる加熱（処理液を温める程度の加熱）によって徐々に小さくなって最終的に蒸発するが（蒸発に時間を要するが）、その蒸発前に液滴同士が接触して一体化すると、基板表面に落下する場合がある。 In this substrate processing apparatus, even when the processing liquid holding plate is raised and moved away from the substrate surface after the substrate processing is completed, the processing liquid is continuously discharged from the discharge port. This is to prevent the occurrence of watermarks due to the presence of a layer of the treatment liquid on the surface of the substrate even if the droplets adhering to the surface of the treatment liquid holding plate on the substrate side fall. When the treatment liquid holding plate is raised from the predetermined treatment position, most of the droplets adhering to the surface of the treatment liquid holding plate on the substrate side are heated by the treatment liquid holding plate (heating to the extent that the treatment liquid is warmed). It gradually becomes smaller and eventually evaporates (although it takes time to evaporate), but if the droplets come into contact with each other and integrate before the evaporation, they may fall on the surface of the substrate.

例えば、前述の処理液保持プレートを上昇させて基板表面から遠ざけた後、処理液の吐出が停止されるが、このとき、液滴が処理液保持プレートの吐出口の周囲に付着することがある。吐出口の周囲に付着した液滴は蒸発する前に、処理液保持プレートの傾きあるいは気流などにより移動して、処理液保持プレートの基板側の表面に付着した蒸発前の他の液滴と接触して一体化し、基板表面に落下することがある。これは、処理を終了した基板表面にとって、ウォーターマークなどの品質不良の原因となる。 For example, after the above-mentioned treatment liquid holding plate is raised and moved away from the substrate surface, the treatment liquid discharge is stopped, but at this time, droplets may adhere to the periphery of the discharge port of the treatment liquid holding plate. .. Before evaporating, the droplets adhering to the periphery of the discharge port move due to the inclination of the treatment liquid holding plate or the air flow, and come into contact with other droplets before evaporation adhering to the surface of the treatment liquid holding plate on the substrate side. It may be integrated and fall on the surface of the substrate. This causes quality defects such as watermarks on the surface of the substrate after processing.

また、処理液の供給停止後、吐出口の周囲やその他の箇所に付着した液滴が、処理液保持プレートの傾きや気流などにより移動し、処理液保持プレートの基板側の表面において温度センサに対向する検出位置に付着することがある。この場合には、液適の影響により、温度センサが正確に処理液保持プレートの温度を測定することが難しくなる。このため、処理液保持プレートの温度、すなわちヒータ温度の制御を安定させることが困難となる。これは、処理液温度を所望温度に維持することを難しくするため、処理不足などの品質不良の原因となる。 In addition, after the supply of the treatment liquid is stopped, the droplets adhering to the periphery of the discharge port and other places move due to the inclination of the treatment liquid holding plate, the air flow, etc., and become a temperature sensor on the surface of the treatment liquid holding plate on the substrate side. It may adhere to the opposite detection position. In this case, it becomes difficult for the temperature sensor to accurately measure the temperature of the processing liquid holding plate due to the influence of the liquid suitability. Therefore, it becomes difficult to stabilize the control of the temperature of the processing liquid holding plate, that is, the heater temperature. This makes it difficult to maintain the treatment liquid temperature at a desired temperature, which causes quality defects such as insufficient treatment.

なお、基板処理が終わっても、ヒータは駆動し、安定したヒータ温度の制御が行われている。これは、処理完了後にヒータが停止すると、新たな基板を処理するとき、ヒータによる加熱を開始してから処理液保持プレートを所定の温度にするまでに時間を要するためである。すなわち、新たな未処理の基板が搬入されても、直ぐに処理を開始することができるように、処理液保持プレートが上昇する時でもヒータの温度制御を行う必要がある。 Even after the substrate processing is completed, the heater is driven and the heater temperature is stably controlled. This is because when the heater is stopped after the treatment is completed, it takes time to bring the treatment liquid holding plate to a predetermined temperature after the heating by the heater is started when processing a new substrate. That is, it is necessary to control the temperature of the heater even when the treatment liquid holding plate rises so that the treatment can be started immediately even if a new untreated substrate is carried in.

国際公開第２０１１／０９０１４１号International Publication No. 2011/090141

本発明が解決しようとする課題は、基板の品質不良の発生を抑えることができる基板処理装置を提供することである。 An object to be solved by the present invention is to provide a substrate processing apparatus capable of suppressing the occurrence of quality defects of the substrate.

実施形態に係る基板処理装置は、基板を保持する基板保持部と、前記基板保持部により保持された前記基板の上方にて、前記基板の表面に対向して離れた位置に設けられ、前記基板の表面に処理液を吐出する吐出口を有し、前記吐出口から吐出された前記処理液を前記基板保持部により保持された前記基板の表面との間に保持する処理液保持プレートと、前記処理液保持プレートに設けられ、前記処理液保持プレートを加熱するヒータと、前記基板保持部により保持された前記基板に対して前記処理液保持プレート及び前記ヒータを昇降させる昇降機構と、前記処理液保持プレートにおける前記基板側の表面の一部のみに、前記吐出口を囲むように環状に設けられ、前記処理液をはじく撥液層と、を備え、前記処理液保持プレートにおける前記基板側とは反対側の面、又は前記処理液保持プレートの内部に設けられ、前記処理液保持プレートの温度を検出する温度センサと、
前記処理液保持プレートにおける前記基板側の表面の一部のみに、前記温度センサに対向し、平面視において、前記温度センサの測温位置を囲むように設けられ、前記処理液をはじく撥液層と、をさらに備える。
The substrate processing apparatus according to the embodiment is provided at a position separated from the substrate holding portion that holds the substrate and the substrate held by the substrate holding portion so as to face the surface of the substrate. A treatment liquid holding plate that has a discharge port for discharging the treatment liquid on the surface of the substrate and holds the treatment liquid discharged from the discharge port between the surface of the substrate held by the substrate holding portion, and the treatment liquid holding plate. A heater provided on the treatment liquid holding plate to heat the treatment liquid holding plate, an elevating mechanism for raising and lowering the treatment liquid holding plate and the heater with respect to the substrate held by the substrate holding portion, and the treatment liquid. Only a part of the surface of the holding plate on the substrate side is provided with a liquid-repellent layer which is provided in an annular shape so as to surround the discharge port and repels the treatment liquid. A temperature sensor provided on the opposite surface or inside the treatment liquid holding plate to detect the temperature of the treatment liquid holding plate.
A liquid-repellent layer that faces the temperature sensor and surrounds the temperature measurement position of the temperature sensor in a plan view only on a part of the surface of the treatment liquid holding plate on the substrate side, and repels the treatment liquid. And further prepare.

実施形態に係る基板処理装置は、基板を保持する基板保持部と、前記基板保持部により保持された前記基板の上方にて、前記基板の表面に対向して離れた位置に設けられ、前記基板の表面に処理液を吐出する吐出口を有し、前記吐出口から吐出された前記処理液を前記基板保持部により保持された前記基板の表面との間に保持する処理液保持プレートと、前記処理液保持プレートに設けられ、前記処理液保持プレートを加熱するヒータと、前記基板保持部により保持された前記基板に対して前記処理液保持プレート及び前記ヒータを昇降させる昇降機構と、前記処理液保持プレートにおける前記基板側とは反対側の面、又は前記処理液保持プレートの内部に設けられ、前記処理液保持プレートの温度を検出する温度センサと、前記処理液保持プレートにおける前記基板側の表面の一部のみに、前記温度センサに対向し、平面視において、前記温度センサの測温位置を囲むように設けられ、前記処理液をはじく撥液層とを備える。
The substrate processing apparatus according to the embodiment includes a substrate holder for holding a substrate at above the substrate held by the previous SL substrate holder, provided in a position away in opposition to the surface of the substrate, wherein A treatment liquid holding plate having a discharge port for discharging the treatment liquid on the surface of the substrate and holding the treatment liquid discharged from the discharge port between the surface of the substrate held by the substrate holding portion. A heater provided on the treatment liquid holding plate to heat the treatment liquid holding plate, an elevating mechanism for raising and lowering the treatment liquid holding plate and the heater with respect to the substrate held by the substrate holding portion, and the treatment. A temperature sensor provided on the surface of the liquid holding plate opposite to the substrate side or inside the processing liquid holding plate to detect the temperature of the processing liquid holding plate, and a temperature sensor on the substrate side of the processing liquid holding plate. only a portion of the front surface, opposite to said temperature sensor, in plan view, is provided so as to surround the temperature measuring position of the temperature sensor, and a liquid-repellent layer repels the treatment liquid.

本発明の実施形態によれば、基板の品質不良の発生を抑えることができる。 According to the embodiment of the present invention, it is possible to suppress the occurrence of quality defects of the substrate.

第１の実施形態に係る基板処理装置の概略構成を示す図である。It is a figure which shows the schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. 第１の実施形態に係る処理液保持プレートの基板側の表面を示す平面図である。It is a top view which shows the surface of the processing liquid holding plate which concerns on 1st Embodiment on the substrate side. 第１の実施形態に係る基板処理装置の基板処理の流れを示すフローチャートである。It is a flowchart which shows the flow | flow of the substrate processing of the substrate processing apparatus which concerns on 1st Embodiment. 第１の実施形態に係る基板処理装置の一部を示す断面図である。It is sectional drawing which shows a part of the substrate processing apparatus which concerns on 1st Embodiment. 第２の実施形態に係る処理液保持プレートの基板側の表面を示す平面図である。It is a top view which shows the surface of the processing liquid holding plate which concerns on 2nd Embodiment on the substrate side. 第３の実施形態に係る基板処理装置の一部を示す断面図である。It is sectional drawing which shows a part of the substrate processing apparatus which concerns on 3rd Embodiment. 第３の実施形態に係る処理液保持プレートの基板側の表面を示す平面図である。It is a top view which shows the surface of the processing liquid holding plate which concerns on 3rd Embodiment on the substrate side. 第４の実施形態に係る基板処理装置の一部を示す断面図である。It is sectional drawing which shows a part of the substrate processing apparatus which concerns on 4th Embodiment.

＜第１の実施形態＞
第１の実施形態について図１から図４を参照して説明する。 <First Embodiment>
The first embodiment will be described with reference to FIGS. 1 to 4.

図１に示すように、第１の実施形態に係る基板処理装置１０は、基板保持プレート２０と、回転機構３０と、処理液保持プレート４０と、液供給部５０と、昇降機構６０と、制御部７０とを備えている。 As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment controls a substrate holding plate 20, a rotating mechanism 30, a processing liquid holding plate 40, a liquid supply unit 50, an elevating mechanism 60, and the like. It is provided with a unit 70.

基板保持プレート２０は、処理室となる処理ボックス（図示せず）の略中央付近に位置付けられ、水平面内で回転可能に設けられている。この基板保持プレート２０は、ピンなどの基板保持部材２１を複数有しており、これらの基板保持部材２１によってウェーハや液晶基板などの基板Ｗを着脱可能に保持する。基板保持プレート２０は、基板Ｗを保持する基板保持部として機能する。この基板保持プレート２０の中央には、柱状の回転体２２が連結されている。なお、基板保持プレート２０の形状は基板Ｗと同じ円形状であり、基板保持プレート２０の平面の大きさは基板Ｗの平面よりも大きい。 The substrate holding plate 20 is located near the center of a processing box (not shown) that serves as a processing chamber, and is rotatably provided in a horizontal plane. The substrate holding plate 20 has a plurality of substrate holding members 21 such as pins, and these substrate holding members 21 detachably hold the substrate W such as a wafer or a liquid crystal substrate. The substrate holding plate 20 functions as a substrate holding portion for holding the substrate W. A columnar rotating body 22 is connected to the center of the substrate holding plate 20. The shape of the substrate holding plate 20 is the same circular shape as that of the substrate W, and the size of the plane of the substrate holding plate 20 is larger than that of the substrate W.

回転機構３０は、柱状の回転体２２を回転可能に保持する保持部や回転体２２を回転させる駆動源となるモータ（いずれも図示せず）などを有している。この回転機構３０は、モータの駆動により回転体２２と共に基板保持プレート２０を回転させる。回転機構３０は制御部７０に電気的に接続されており、その駆動が制御部７０により制御される。 The rotating mechanism 30 includes a holding portion that rotatably holds the columnar rotating body 22, a motor that serves as a driving source for rotating the rotating body 22 (neither of them is shown), and the like. The rotation mechanism 30 rotates the substrate holding plate 20 together with the rotating body 22 by driving the motor. The rotation mechanism 30 is electrically connected to the control unit 70, and its drive is controlled by the control unit 70.

処理液保持プレート４０は、基板保持プレート２０上の基板Ｗに対向して離れた位置に設けられており、昇降機構６０により昇降方向に移動することが可能に形成されている。処理液保持プレート４０は、処理液Ｓを吐出する吐出口４０ａを有している。この処理液保持プレート４０の周縁部には、基板保持プレート２０と逆側に立ち上がる壁４０ｂが形成されている。処理液保持プレート４０は、基板保持プレート２０上の基板Ｗに対する所定の離間距離（例えば、４ｍｍ以下）で、基板保持プレート２０上の基板Ｗとの間に処理液Ｓを保持する。処理液保持プレート４０は、熱伝導性を有する材料により形成されている。なお、処理液保持プレート４０の形状は基板Ｗと同じ円形状であり、処理液保持プレート４０の平面の大きさは基板Ｗの平面以上であれば良いが、基板Ｗの平面よりも大きいことが好ましい。 The treatment liquid holding plate 40 is provided at a position distant from the substrate W on the substrate holding plate 20 so as to be movable in the elevating direction by the elevating mechanism 60. The treatment liquid holding plate 40 has a discharge port 40a for discharging the treatment liquid S. A wall 40b that rises on the opposite side of the substrate holding plate 20 is formed on the peripheral edge of the processing liquid holding plate 40. The treatment liquid holding plate 40 holds the treatment liquid S between the treatment liquid holding plate 20 and the substrate W on the substrate holding plate 20 at a predetermined separation distance (for example, 4 mm or less) from the substrate W. The treatment liquid holding plate 40 is made of a material having thermal conductivity. The shape of the treatment liquid holding plate 40 is the same circular shape as that of the substrate W, and the size of the plane of the treatment liquid holding plate 40 may be larger than the plane of the substrate W, but may be larger than the plane of the substrate W. preferable.

液供給部５０は、処理液供給管５１と、液貯留部５２とを備えている。処理液供給管５１の一端部は、処理液保持プレート４０及びヒータ４１を貫通するように設けられ、処理液保持プレート４０に固定されている。この処理液供給管５１の開口は、処理液保持プレート４０の吐出口４０ａとして機能する。液貯留部５２は、各種の処理液（例えば、純水や硫酸、過酸化水素水、アンモニア水、リン酸など）を貯留する処理液槽（図示せず）を備えている。この液貯留部５２は、複数の電磁弁などの開閉により各処理液槽から所望の処理液Ｓを処理液供給管５１に流すことが可能に構成されている。液貯留部５２は制御部７０に電気的に接続されており、その駆動が制御部７０により制御される。 The liquid supply unit 50 includes a treatment liquid supply pipe 51 and a liquid storage unit 52. One end of the treatment liquid supply pipe 51 is provided so as to penetrate the treatment liquid holding plate 40 and the heater 41, and is fixed to the treatment liquid holding plate 40. The opening of the processing liquid supply pipe 51 functions as a discharge port 40a of the processing liquid holding plate 40. The liquid storage unit 52 includes a treatment liquid tank (not shown) for storing various treatment liquids (for example, pure water, sulfuric acid, hydrogen peroxide solution, ammonia water, phosphoric acid, etc.). The liquid storage unit 52 is configured to allow a desired treatment liquid S to flow from each treatment liquid tank to the treatment liquid supply pipe 51 by opening and closing a plurality of solenoid valves and the like. The liquid storage unit 52 is electrically connected to the control unit 70, and its drive is controlled by the control unit 70.

ここで、前述の処理液保持プレート４０の基板側と反対側の面には、ヒータ４１が設けられており、さらに、複数（図１の例では、二つ）の温度センサ４２が設けられている。一方、処理液保持プレート４０の基板側の面には、撥液層４３が吐出口４０ａを囲むように環状に設けられている。 Here, a heater 41 is provided on the surface of the above-mentioned processing liquid holding plate 40 opposite to the substrate side, and a plurality of (two in the example of FIG. 1) temperature sensors 42 are further provided. There is. On the other hand, a liquid repellent layer 43 is provided in an annular shape on the surface of the treatment liquid holding plate 40 on the substrate side so as to surround the discharge port 40a.

ヒータ４１は、処理液保持プレート４０の基板Ｗ側と反対側の面を均等に加熱し、処理液保持プレート４０の全体を所定温度に保持する。ヒータ４１としては、例えば、シート状のヒータが用いられる。このヒータ４１は制御部７０に電気的に接続されており、その駆動が制御部７０により制御される。 The heater 41 evenly heats the surface of the processing liquid holding plate 40 on the side opposite to the substrate W side, and holds the entire processing liquid holding plate 40 at a predetermined temperature. As the heater 41, for example, a sheet-shaped heater is used. The heater 41 is electrically connected to the control unit 70, and its drive is controlled by the control unit 70.

各温度センサ４２は、処理液保持プレート４０の回転軸Ａ１を中心とする円周上に設けられている。これらの温度センサ４２は制御部７０に電気的に接続されており、各検出信号（検出温度）が制御部７０に送信される。制御部７０は、各検出温度に応じて、処理液保持プレート４０の全体を所定温度に維持するようにヒータ４１の温度を調整する。温度センサ４２としては、例えば、熱電対などが用いられる。 Each temperature sensor 42 is provided on the circumference of the processing liquid holding plate 40 about the rotation axis A1. These temperature sensors 42 are electrically connected to the control unit 70, and each detection signal (detection temperature) is transmitted to the control unit 70. The control unit 70 adjusts the temperature of the heater 41 according to each detection temperature so as to maintain the entire processing liquid holding plate 40 at a predetermined temperature. As the temperature sensor 42, for example, a thermocouple or the like is used.

撥液層４３は、図２に示すように、円形の吐出口４０ａの形状に合わせて円環状に形成されており、所定の幅を有している。この所定の幅は、少なくとも基板Ｗの半径以下である。撥液層４３は、処理液Ｓをはじく材料（例えば、ＰＦＡやＰＴＦＥなどのフッ素樹脂）により形成されている。この領域は、処理液Ｓに対する濡れ性が他の領域に比べ悪く、処理液Ｓの液滴が付着し難い領域である。撥液層４４の材料としては、断熱材として機能するものが多い。したがって、処理液保持プレート４０から処理液に熱を伝わるようにするためには、処理液保持プレート４０に対する撥液層４３の設置領域を狭くすることが望ましい。 As shown in FIG. 2, the liquid-repellent layer 43 is formed in an annular shape in accordance with the shape of the circular discharge port 40a, and has a predetermined width. This predetermined width is at least equal to or less than the radius of the substrate W. The liquid repellent layer 43 is formed of a material that repels the treatment liquid S (for example, a fluororesin such as PFA or PTFE). This region has poor wettability with respect to the treatment liquid S as compared with other regions, and is a region in which droplets of the treatment liquid S are unlikely to adhere. Many of the materials of the liquid repellent layer 44 function as a heat insulating material. Therefore, in order to transfer heat from the treatment liquid holding plate 40 to the treatment liquid, it is desirable to narrow the installation area of the liquid repellent layer 43 with respect to the treatment liquid holding plate 40.

なお、吐出口４０ａは、その中心が基板保持プレート２０の回転軸Ａ１からずれた位置（偏心）に設けられている。これにより、処理液Ｓが基板保持プレート２０上の基板Ｗの回転中心に供給され続けることが避けられ、その回転中心の基板温度が他の箇所に比べて低くなることを抑えることが可能となる。したがって、回転中心の基板温度の低下によって処理液温度が部分的に低下することが抑制されるので、処理液温度の均一化を実現することができる。ただし、吐出口４０ａは偏心してなくても良く、その中心が基板保持プレート２０の回転軸Ａ１上に位置付けられて形成されても良い。 The discharge port 40a is provided at a position (eccentricity) whose center is deviated from the rotation axis A1 of the substrate holding plate 20. As a result, it is possible to prevent the processing liquid S from being continuously supplied to the rotation center of the substrate W on the substrate holding plate 20, and it is possible to prevent the substrate temperature at the rotation center from becoming lower than that at other locations. .. Therefore, since it is suppressed that the temperature of the processing liquid is partially lowered due to the decrease of the substrate temperature at the center of rotation, it is possible to realize uniform treatment liquid temperature. However, the discharge port 40a does not have to be eccentric, and the center thereof may be positioned on the rotation axis A1 of the substrate holding plate 20.

図１に戻り、昇降機構６０は、処理液保持プレート４０を保持する保持部やその保持部を昇降方向に移動させる駆動源となるモータ（いずれも図示せず）などを有している。この昇降機構６０は、モータの駆動により処理液保持プレート４０を昇降方向に移動させる。昇降機構６０は制御部７０に電気的に接続されており、その駆動が制御部７０により制御される。 Returning to FIG. 1, the elevating mechanism 60 includes a holding portion that holds the processing liquid holding plate 40, a motor that serves as a drive source for moving the holding portion in the elevating direction, and the like (neither is shown). The elevating mechanism 60 moves the processing liquid holding plate 40 in the elevating direction by driving the motor. The elevating mechanism 60 is electrically connected to the control unit 70, and its drive is controlled by the control unit 70.

制御部７０は、各部を集中的に制御するマイクロコンピュータと、基板処理に関する基板処理情報や各種プログラムなどを記憶する記憶部（いずれも図示せず）とを備えている。この制御部７０は、基板処理情報や各種プログラムに基づいて回転機構３０やヒータ４１、液供給部５０、昇降機構６０などを制御する。例えば、制御部７０は、基板保持プレート２０の回転動作やヒータ４１の加熱動作、液供給部５０の液供給動作、処理液保持プレート４０の昇降動作など各動作を制御する。 The control unit 70 includes a microcomputer that centrally controls each unit, and a storage unit (none of which is shown) that stores substrate processing information and various programs related to substrate processing. The control unit 70 controls the rotation mechanism 30, the heater 41, the liquid supply unit 50, the elevating mechanism 60, and the like based on the substrate processing information and various programs. For example, the control unit 70 controls each operation such as the rotation operation of the substrate holding plate 20, the heating operation of the heater 41, the liquid supply operation of the liquid supply unit 50, and the raising / lowering operation of the processing liquid holding plate 40.

（基板処理工程）
次に、前述の基板処理装置１０が行う基板処理の流れについて説明する。 (Substrate processing process)
Next, the flow of the substrate processing performed by the above-mentioned substrate processing apparatus 10 will be described.

まず、基板処理前の準備として、処理開始前にヒータ４１は通電され、この通電されたヒータ４１によって処理液保持プレート４０の基板Ｗ側と反対側の面（上面）が均等に加熱され、処理液保持プレート４０の全体が所定温度（例えば、温度範囲１００℃〜４００℃内の温度）に維持される。この所定温度は、処理液Ｓの処理能力（例えば、レジスト除去能力）を高めることが可能な温度である。 First, as a preparation before substrate processing, the heater 41 is energized before the start of processing, and the surface (upper surface) of the processing liquid holding plate 40 opposite to the substrate W side is uniformly heated by the energized heater 41 for processing. The entire liquid holding plate 40 is maintained at a predetermined temperature (for example, a temperature within the temperature range of 100 ° C. to 400 ° C.). This predetermined temperature is a temperature at which the processing capacity (for example, resist removing capacity) of the processing liquid S can be increased.

次いで、図３に示すように、ステップＳ１において、処理液保持プレート４０が最上位点に上昇した状態で、この処理液保持プレート４０と基板保持プレート２０との間に処理対象の基板Ｗがロボットハンドリング装置（図示せず）などにより搬入され、基板Ｗの周囲部分が各基板保持部材２１により保持され、基板Ｗが基板保持プレート２０上に搬入される。このとき、基板Ｗの中心と基板保持プレート２０の回転軸Ａ１とが一致するように位置決めされる。 Next, as shown in FIG. 3, in step S1, with the processing liquid holding plate 40 raised to the highest point, the substrate W to be processed is placed between the processing liquid holding plate 40 and the substrate holding plate 20 by the robot. It is carried in by a handling device (not shown) or the like, the peripheral portion of the substrate W is held by each substrate holding member 21, and the substrate W is carried on the substrate holding plate 20. At this time, the center of the substrate W and the rotation axis A1 of the substrate holding plate 20 are positioned so as to coincide with each other.

ステップＳ２において、処理液保持プレート４０は、基板保持プレート２０上の基板Ｗの表面との間に所定の隙間（例えば、４ｍｍ以下）が形成される位置まで昇降機構６０により下降する（図１参照）。そして、基板保持プレート２０は、低速な所定速度（例えば、５０ｒｐｍ程度）で回転機構３０により回転する。これにより、基板Ｗが基板保持プレート２０と共に前述の低速な所定速度で回転する。 In step S2, the treatment liquid holding plate 40 is lowered by the elevating mechanism 60 to a position where a predetermined gap (for example, 4 mm or less) is formed between the treatment liquid holding plate 40 and the surface of the substrate W on the substrate holding plate 20 (see FIG. 1). ). Then, the substrate holding plate 20 is rotated by the rotation mechanism 30 at a low speed (for example, about 50 rpm). As a result, the substrate W rotates together with the substrate holding plate 20 at the above-mentioned low-speed predetermined speed.

ステップＳ３において、処理液保持プレート４０と基板保持プレート２０上の基板Ｗとの離間距離が所定距離となり、基板Ｗが低速の所定速度で回転している状態において、処理液Ｓが処理液保持プレート４０の吐出口４０ａから基板Ｗの表面に供給される。具体的には、液貯留部５２から硫酸及び過酸化水素水が処理液供給管５１に流入する。このとき、硫酸と過酸化水素水とが混ざり合い、その混ざり合ってできた処理液Ｓが処理液供給管５１を通って吐出口４０ａから、回転する基板Ｗの表面に供給される。 In step S3, the treatment liquid S is the treatment liquid holding plate in a state where the separation distance between the treatment liquid holding plate 40 and the substrate W on the substrate holding plate 20 is a predetermined distance and the substrate W is rotating at a low speed and a predetermined speed. It is supplied to the surface of the substrate W from the discharge port 40a of 40. Specifically, sulfuric acid and hydrogen peroxide solution flow into the treatment liquid supply pipe 51 from the liquid storage unit 52. At this time, sulfuric acid and hydrogen peroxide solution are mixed, and the mixed treatment liquid S is supplied to the surface of the rotating substrate W from the discharge port 40a through the treatment liquid supply pipe 51.

回転する基板Ｗの表面に供給された処理液Ｓは、基板Ｗの回転による遠心力によって基板Ｗの表面全体に広がっていく。そして、処理液保持プレート４０と基板Ｗの表面との間の隙間は処理液Ｓにより満たされ、処理液Ｓの表面張力によって基板Ｗの表面に層状に処理液Ｓが保持される（図１参照）。この層状の処理液Ｓは、ヒータ４１により加熱された処理液保持プレート４０によって全体的に温められて高温（例えば、温度範囲１００℃〜４００℃内の温度）に維持される。そして、この高温に維持されて処理能力（例えば、レジスト除去能力）の高められた処理液Ｓによって基板Ｗの表面が処理されていく。この状態で、処理液Ｓが処理液供給管５１から連続的に供給されると、基板Ｗの表面の処理液Ｓは新たな処理液Ｓにて置換されつつも層状の形態を維持する。回転する基板Ｗの外周部分に到達した処理液Ｓは、その外周部分から順次廃液として落下していく。 The processing liquid S supplied to the surface of the rotating substrate W spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Then, the gap between the treatment liquid holding plate 40 and the surface of the substrate W is filled with the treatment liquid S, and the treatment liquid S is held in layers on the surface of the substrate W by the surface tension of the treatment liquid S (see FIG. 1). ). The layered treatment liquid S is entirely warmed by the treatment liquid holding plate 40 heated by the heater 41 and maintained at a high temperature (for example, a temperature within a temperature range of 100 ° C. to 400 ° C.). Then, the surface of the substrate W is treated by the treatment liquid S which is maintained at this high temperature and has an increased processing capacity (for example, resist removing capacity). In this state, when the treatment liquid S is continuously supplied from the treatment liquid supply pipe 51, the treatment liquid S on the surface of the substrate W is replaced with the new treatment liquid S while maintaining the layered form. The processing liquid S that has reached the outer peripheral portion of the rotating substrate W gradually falls as waste liquid from the outer peripheral portion.

ここで、前述の基板処理に伴い、処理液Ｓは、基板Ｗに熱を奪われる（基板Ｗが温まる）ことになるが、処理液保持プレート４０上のヒータ４１の作用により、温度低下する処理液Ｓに低下分の熱が供給されることになる。この供給熱量は、処理液保持プレート４０の温度を一定に保つことで制御される。処理液Ｓは、回転する基板Ｗの表面上を流れるが、基板Ｗ上に供給されてから外周部分から流れ落ちるまでの間、ヒータ４１の温度制御により基板Ｗの表面を温度低下させずに同一の温度条件で処理することができる。 Here, with the above-mentioned substrate processing, the processing liquid S loses heat to the substrate W (the substrate W warms up), but the temperature is lowered by the action of the heater 41 on the processing liquid holding plate 40. The reduced amount of heat will be supplied to the liquid S. This amount of heat supply is controlled by keeping the temperature of the treatment liquid holding plate 40 constant. The treatment liquid S flows on the surface of the rotating substrate W, but is the same without lowering the temperature of the surface of the substrate W by controlling the temperature of the heater 41 from the time it is supplied onto the substrate W until it flows down from the outer peripheral portion. It can be processed under temperature conditions.

その後、前述の処理液Ｓの供給開始から所定の処理時間が経過すると、処理液Ｓの供給が停止され、次の処理液Ｓとして純水が前述と同じように基板Ｗの表面に供給され、基板Ｗの表面が洗浄される。また、純水の供給開始から所定の処理時間が経過すると、純水の供給が停止され、次の処理液Ｓとして、過酸化水素水、純水及びアンモニア水が混ざり合い、その混ざり合ってできたＡＰＭが基板Ｗの表面に供給される。さらに、ＡＰＭの供給開始から所定の処理時間が経過すると、ＡＰＭの供給が停止され、次の処理液Ｓとして純水が前述と同じように基板Ｗの表面に供給され、基板Ｗの表面が洗浄される。このとき、処理液保持プレート４０の基板Ｗ側の表面も同時に純水により洗浄されることになる。 After that, when a predetermined treatment time elapses from the start of supply of the above-mentioned treatment liquid S, the supply of the treatment liquid S is stopped, and pure water is supplied to the surface of the substrate W as the next treatment liquid S in the same manner as described above. The surface of the substrate W is cleaned. Further, when a predetermined treatment time elapses from the start of the supply of pure water, the supply of pure water is stopped, and hydrogen peroxide solution, pure water, and ammonia water are mixed as the next processing liquid S, and the mixture is formed. APM is supplied to the surface of the substrate W. Further, when a predetermined processing time elapses from the start of the supply of APM, the supply of APM is stopped, pure water is supplied to the surface of the substrate W as the next processing liquid S in the same manner as described above, and the surface of the substrate W is cleaned. Will be done. At this time, the surface of the treatment liquid holding plate 40 on the substrate W side is also cleaned with pure water at the same time.

ステップＳ４において、前述の純水による２回目の洗浄処理が終了すると、図４に示すように、処理液Ｓが処理液供給管５１から吐出されたまま、処理液保持プレート４０が最上位点まで昇降機構６０により上昇し、その後、処理液Ｓの供給が停止される。このとき、処理液供給管５１内は負圧にされ、吐出口４０ａから液滴が基板保持プレート２０上の基板Ｗの表面に落下することが抑えられる。 In step S4, when the second cleaning treatment with pure water described above is completed, as shown in FIG. 4, the treatment liquid holding plate 40 reaches the highest point while the treatment liquid S is discharged from the treatment liquid supply pipe 51. It is raised by the elevating mechanism 60, and then the supply of the processing liquid S is stopped. At this time, the pressure inside the processing liquid supply pipe 51 is set to negative pressure, and it is possible to prevent the droplets from falling from the discharge port 40a onto the surface of the substrate W on the substrate holding plate 20.

なお、処理液保持プレート４０が上昇するときには、処理液Ｓを流し続ける。これは、処理液保持プレート４０が上昇する際に、処理液保持プレート４０の基板Ｗ側の表面に付着した液滴が落下しても、基板表面に処理液Ｓの層を存在させてウォーターマークが発生することを抑えるためであり、さらに、処理液保持プレート４０に対する基板Ｗの貼り付きを抑制するためでもある。 When the treatment liquid holding plate 40 rises, the treatment liquid S continues to flow. This is because when the treatment liquid holding plate 40 rises, even if droplets adhering to the surface of the treatment liquid holding plate 40 on the substrate W side fall, a layer of the treatment liquid S is present on the substrate surface to create a watermark. This is also for suppressing the occurrence of the substrate W, and further for suppressing the adhesion of the substrate W to the processing liquid holding plate 40.

ここで、前述の処理液保持プレート４０の実際の温度変化は処理液Ｓの温度に依存する。過酸化水素水と硫酸との混合液を処理液Ｓとした場合、高温処理（１００℃〜４００℃内の温度）において、処理液保持プレート４０の熱が混合液に供給される。処理液プレート４０の熱は混合液によって奪われるが、混合液は混合時に生じる反応熱によって高温であるため、処理液保持プレート４０から奪われる熱は小さく、処理液保持プレート４０の温度は大きく低下しない。なお、混合液はヒータなどの加熱装置により予め加熱されて供給されることもある。一方、純水（例えば、２５℃）を処理液Ｓとした場合、処理液保持プレート４０と純水との温度差が大きく、処理液保持プレート４０の熱が純水によって奪われる。つまり、所定時間、処理液保持プレート４０の基板Ｗ側の表面と純水が接触していると、処理液保持プレート４０の温度が大きく低下し、処理液保持プレート４０の温度が９０℃〜１００℃程度になる。その後、処理液保持プレート４０が上昇すると、処理液保持プレート４０の基板Ｗ側の表面は、純水の液滴が存在することができる温度まで下がるが、ヒータ４１による加温によって熱が処理液保持プレート４０の基板Ｗ側の表面に伝わるため、その表面に付着した液滴は徐々に蒸発することになる。 Here, the actual temperature change of the above-mentioned treatment liquid holding plate 40 depends on the temperature of the treatment liquid S. When the mixed solution of hydrogen peroxide solution and sulfuric acid is used as the processing solution S, the heat of the processing solution holding plate 40 is supplied to the mixed solution in the high temperature treatment (temperature within 100 ° C. to 400 ° C.). The heat of the treatment liquid plate 40 is taken away by the mixed liquid, but since the mixed liquid is high in temperature due to the reaction heat generated during mixing, the heat taken from the treatment liquid holding plate 40 is small, and the temperature of the treatment liquid holding plate 40 drops significantly. do not. The mixed liquid may be supplied by being preheated by a heating device such as a heater. On the other hand, when pure water (for example, 25 ° C.) is used as the treatment liquid S, the temperature difference between the treatment liquid holding plate 40 and the pure water is large, and the heat of the treatment liquid holding plate 40 is taken away by the pure water. That is, when pure water is in contact with the surface of the treatment liquid holding plate 40 on the substrate W side for a predetermined time, the temperature of the treatment liquid holding plate 40 drops significantly, and the temperature of the treatment liquid holding plate 40 rises from 90 ° C. to 100. It becomes about ℃. After that, when the treatment liquid holding plate 40 rises, the surface of the treatment liquid holding plate 40 on the substrate W side drops to a temperature at which droplets of pure water can exist, but the heat is generated by the heating by the heater 41. Since it is transmitted to the surface of the holding plate 40 on the substrate W side, the droplets adhering to the surface gradually evaporate.

ステップＳ５において、基板保持プレート２０は高速（例えば、１５００ｒｐｍ程度）で回転機構３０により回転する。これにより、基板Ｗが基板保持プレート２０とともに高速で回転する。基板Ｗが高速で回転すると、基板Ｗ上に残留した水分が遠心力によって飛散され、基板Ｗ上の水分が除去される。 In step S5, the substrate holding plate 20 is rotated by the rotation mechanism 30 at a high speed (for example, about 1500 rpm). As a result, the substrate W rotates at high speed together with the substrate holding plate 20. When the substrate W rotates at high speed, the water remaining on the substrate W is scattered by centrifugal force, and the water on the substrate W is removed.

ステップＳ６において、前述の基板Ｗの乾燥処理が終了すると、基板保持プレート２０の回転が停止され、基板保持プレート２０上に保持された処理済みの基板Ｗがロボットハンドリング装置（図示せず）などにより搬出される。以後、順次基板Ｗに対して前述と同様の手順（ステップＳ１〜Ｓ６）に従って、処理が実行される。 In step S6, when the drying process of the substrate W is completed, the rotation of the substrate holding plate 20 is stopped, and the processed substrate W held on the substrate holding plate 20 is moved by a robot handling device (not shown) or the like. It is carried out. After that, the processing is sequentially executed on the substrate W according to the same procedure as described above (steps S1 to S6).

前述の基板処理工程によれば、処理液保持プレート４０はヒータ４１によって均等に加熱されており、基板保持プレート２０上に保持された基板Ｗの表面に処理液Ｓが層状に保持され、その層状の処理液Ｓが処理液保持プレート４０によって全体的に加熱される。これにより、処理液Ｓをより効率的に加熱することができる。さらに、層状の処理液Ｓが基板Ｗの表面に常に保持された状態で基板Ｗの表面が処理されるので、その処理液Ｓを無駄なく効率的に使用して基板Ｗの表面を処理することができる。 According to the substrate processing step described above, the processing liquid holding plate 40 is uniformly heated by the heater 41, and the processing liquid S is held in layers on the surface of the substrate W held on the substrate holding plate 20, and the treatment liquid S is layered. The treatment liquid S of the above is heated as a whole by the treatment liquid holding plate 40. Thereby, the treatment liquid S can be heated more efficiently. Further, since the surface of the substrate W is treated while the layered treatment liquid S is always held on the surface of the substrate W, the surface of the substrate W is treated by efficiently using the treatment liquid S without waste. Can be done.

また、図４に示すように、処理液保持プレート４０が基板Ｗの表面から離れ、処理液Ｓ（純水）が供給されている間やその供給が停止された際など、吐出口４０ａから吐出されている処理液Ｓが、吐出口４０ａの周辺の撥液層４３によって吐出口４０ａの周囲に付着することが抑えられている。つまり、吐出口４０ａの周囲に液滴（処理液Ｓ）が付着すること自体が抑制されるので、吐出口４０ａの周囲に付着した液滴が、処理液保持プレート４０の傾きあるいは気流などにより移動し、処理液保持プレート４０の基板Ｗ側の表面に付着した蒸発前の他の液滴と接触して一体化し、基板Ｗの表面に落下することを抑えることができる。さらに、処理液Ｓの供給停止後、処理液供給管５１の壁面に付着した液が吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出し、処理液保持プレート４０の基板Ｗ側の表面に付着した蒸発前の他の液滴と接触して一体化し、基板Ｗの表面に落下することも抑えることができる。 Further, as shown in FIG. 4, when the treatment liquid holding plate 40 is separated from the surface of the substrate W and the treatment liquid S (pure water) is being supplied or when the supply is stopped, the treatment liquid S (pure water) is discharged from the discharge port 40a. The treated liquid S is prevented from adhering to the periphery of the discharge port 40a by the liquid repellent layer 43 around the discharge port 40a. That is, since the droplet (treatment liquid S) itself is suppressed from adhering to the periphery of the discharge port 40a, the droplet adhering to the periphery of the discharge port 40a moves due to the inclination of the treatment liquid holding plate 40, the air flow, or the like. However, it is possible to prevent the treatment liquid holding plate 40 from falling on the surface of the substrate W by contacting and integrating with other droplets before evaporation adhering to the surface of the substrate W on the substrate W side. Further, after the supply of the treatment liquid S is stopped, the liquid adhering to the wall surface of the treatment liquid supply pipe 51 flows out from the discharge port 40a to the surface of the treatment liquid holding plate 40 on the substrate W side, and is on the substrate W side of the treatment liquid holding plate 40. It is also possible to prevent the substrate W from falling onto the surface of the substrate W by contacting and integrating with other droplets adhering to the surface before evaporation.

ここで、処理液Ｓの供給停止後、処理液供給管５１の壁面に付着した液が、重力に負けて処理液供給管５１の壁面を伝って吐出口４０ａに向かって流れ、吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出すことがある。この流れ出た液が、処理液保持プレート４０の基板Ｗ側の表面に付着した蒸発前の他の液滴と接触して一体化し、基板Ｗの表面に落下することがある。これは、処理を終了した基板Ｗの表面にとって、ウォーターマークなどの品質不良の原因となる。なお、処理液Ｓの供給停止後、処理液供給管５１内を負圧にしても、処理液供給管５１の壁面に付着した液がその壁面を伝って吐出口４０ａに向かって流れ、吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出すこともある。 Here, after the supply of the treatment liquid S is stopped, the liquid adhering to the wall surface of the treatment liquid supply pipe 51 loses gravity and flows toward the discharge port 40a along the wall surface of the treatment liquid supply pipe 51, and flows from the discharge port 40a. It may flow out to the surface of the processing liquid holding plate 40 on the substrate W side. The flowing liquid may come into contact with other droplets before evaporation adhering to the surface of the processing liquid holding plate 40 on the substrate W side to be integrated and fall on the surface of the substrate W. This causes quality defects such as watermarks on the surface of the substrate W after processing. Even if the pressure inside the processing liquid supply pipe 51 is negative after the supply of the processing liquid S is stopped, the liquid adhering to the wall surface of the processing liquid supply pipe 51 flows along the wall surface toward the discharge port 40a and is discharged. It may flow out from 40a to the surface of the processing liquid holding plate 40 on the substrate W side.

以上説明したように、第１の実施形態によれば、処理液保持プレート４０の基板Ｗ側の表面に、処理液保持プレート４０の吐出口４０ａを囲む環状に撥液層４３を設けることによって、処理液Ｓが吐出口４０ａの周囲に液滴として付着したり、吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出したりすることを抑制することが可能となる。これにより、処理液保持プレート４０から基板Ｗの表面への液適落下を抑えることが可能になるので、ウォーターマークなどの品質不良の発生を抑制することができる。 As described above, according to the first embodiment, the liquid repellent layer 43 is provided on the surface of the treatment liquid holding plate 40 on the substrate W side in an annular shape surrounding the discharge port 40a of the treatment liquid holding plate 40. It is possible to prevent the treatment liquid S from adhering as droplets around the discharge port 40a or flowing out from the discharge port 40a to the surface of the treatment liquid holding plate 40 on the substrate W side. As a result, it is possible to suppress an appropriate drop of the liquid from the treatment liquid holding plate 40 onto the surface of the substrate W, so that it is possible to suppress the occurrence of quality defects such as watermarks.

＜第２の実施形態＞
第２の実施形態について図５を参照して説明する。なお、第２の実施形態では、第１の実施形態との相違点（撥液層のサイズ）について説明し、その他の説明を省略する。 <Second embodiment>
The second embodiment will be described with reference to FIG. In the second embodiment, the difference from the first embodiment (size of the liquid repellent layer) will be described, and other description will be omitted.

図５に示すように、第２の実施形態に係る撥液層４３ａは、円環状に形成されている。この円環状の撥液層４３ａは、吐出口４０ａと回転軸Ａ１が通る位置とを含み、各温度センサ４２より基板Ｗの内側に位置するサイズに形成されている。円環状の撥液層４３ａの半径は、第１の実施形態に比べて大きく、一例として、処理液保持プレート４０の半径以下である。このような円環状の撥液層４３ａは、第１の実施形態に比べ、処理液保持プレート４０の吐出口４０ａから離れるため、吐出口４０ａから吐出された処理液Ｓにより、撥液層４３ａのエッジ部が剥離したり、損傷したりすることを抑制することができる。 As shown in FIG. 5, the liquid repellent layer 43a according to the second embodiment is formed in an annular shape. The annular liquid-repellent layer 43a includes a discharge port 40a and a position through which the rotation shaft A1 passes, and is formed in a size located inside the substrate W from each temperature sensor 42. The radius of the annular liquid repellent layer 43a is larger than that of the first embodiment, and is, for example, equal to or less than the radius of the treatment liquid holding plate 40. Since the annular liquid repellent layer 43a is separated from the discharge port 40a of the treatment liquid holding plate 40 as compared with the first embodiment, the treatment liquid S discharged from the discharge port 40a causes the liquid repellent layer 43a to be separated from the discharge port 40a. It is possible to prevent the edge portion from peeling off or being damaged.

以上説明したように、第２の実施形態によれば、第１の実施形態と同様の効果を得ることができる。さらに、第１の実施形態に比べ、環状の撥液層４３ａの少なくとも一部を吐出口４０ａから離すことによって、処理液Ｓによる撥液層４３ａの剥離や損傷の発生を抑えることができる。 As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Further, as compared with the first embodiment, by separating at least a part of the annular liquid repellent layer 43a from the discharge port 40a, it is possible to suppress the peeling and damage of the liquid repellent layer 43a due to the treatment liquid S.

＜第３の実施形態＞
第３の実施形態について図６及び図７を参照して説明する。なお、第３の実施形態では、第１の実施形態との相違点（撥液層の設置個所）について説明し、その他の説明を省略する。 <Third embodiment>
A third embodiment will be described with reference to FIGS. 6 and 7. In the third embodiment, the difference from the first embodiment (location where the liquid repellent layer is installed) will be described, and other description will be omitted.

図６及び図７に示すように、第３の実施形態に係る撥液層４４は、処理液保持プレート４０の基板Ｗ側の面に温度センサ４２に対向するように設けられており、円環状に形成されている。また、撥液層４５も、処理液保持プレート４０の基板Ｗ側の面に温度センサ４２に対向するように設けられており、円環状に形成されている。なお、第３の実施形態では、第１の実施形態に係る撥液層４３は設けられていないが、これに限るものではなく、一緒に設けられても良い。 As shown in FIGS. 6 and 7, the liquid repellent layer 44 according to the third embodiment is provided on the surface of the treatment liquid holding plate 40 on the substrate W side so as to face the temperature sensor 42, and is annular. Is formed in. Further, the liquid repellent layer 45 is also provided on the surface of the treatment liquid holding plate 40 on the substrate W side so as to face the temperature sensor 42, and is formed in an annular shape. In the third embodiment, the liquid repellent layer 43 according to the first embodiment is not provided, but the present invention is not limited to this, and the liquid repellent layer 43 may be provided together.

環状の撥液層４４、４５は、図７の平面視において、それぞれ対応する温度センサ４２の測温位置を囲むように形成されている。これらの環状の撥液層４４、４５によれば、処理液保持プレート４０が石英などの透明あるいは半透明部材である場合、処理液保持プレート４０の基板Ｗ側の表面から温度センサ４２の測温位置を視認することができる。また、温度センサ４２の直下には撥液層４４、４５が形成されていないため、処理液の温度が温度センサ４２によって検出されやすくなる。 The annular liquid repellent layers 44 and 45 are formed so as to surround the temperature measurement positions of the corresponding temperature sensors 42 in the plan view of FIG. According to these annular liquid repellent layers 44 and 45, when the treatment liquid holding plate 40 is a transparent or translucent member such as quartz, the temperature of the temperature sensor 42 is measured from the surface of the treatment liquid holding plate 40 on the substrate W side. The position can be visually recognized. Further, since the liquid repellent layers 44 and 45 are not formed directly under the temperature sensor 42, the temperature of the processing liquid can be easily detected by the temperature sensor 42.

なお、撥液層４４、４５の環形状は、円形に限られるものではなく、楕円や長方形などの形状でも良い。また、撥液層４４、４５は、環形状ではなく、図７の平面視において温度センサ４２の測温位置を覆う円や楕円、長方形などの形状に形成されても良い。 The ring shape of the liquid repellent layers 44 and 45 is not limited to a circular shape, and may be an elliptical shape or a rectangular shape. Further, the liquid repellent layers 44 and 45 may be formed in a shape such as a circle, an ellipse, or a rectangle covering the temperature measurement position of the temperature sensor 42 in the plan view of FIG. 7 instead of the ring shape.

撥液層４４、４５は、第１の実施形態と同様、処理液Ｓをはじく材料（例えば、ＰＦＡやＰＴＦＥなどのフッ素樹脂）により形成されている。これらの領域は、処理液Ｓに対する濡れ性が他の領域に比べ悪く、処理液Ｓの液滴が付着し難い領域である。撥液層４４、４５の材料としては、断熱材として機能するものが多い。したがって、処理液保持プレート４０から処理液に熱を伝わるようにするためには、処理液保持プレート４０に対する撥液層４４、４５の設置領域を狭くすることが望ましい。 The liquid repellent layers 44 and 45 are formed of a material that repels the treatment liquid S (for example, a fluororesin such as PFA or PTFE) as in the first embodiment. These regions have poor wettability with respect to the treatment liquid S as compared with other regions, and are regions in which droplets of the treatment liquid S are unlikely to adhere. Many of the materials of the liquid repellent layers 44 and 45 function as a heat insulating material. Therefore, in order to transfer heat from the treatment liquid holding plate 40 to the treatment liquid, it is desirable to narrow the installation areas of the liquid repellent layers 44 and 45 with respect to the treatment liquid holding plate 40.

前述のように環状の撥液層４４、４５は、処理液保持プレート４０の基板Ｗ側の面において各温度センサ４２に対向する検出位置を囲むように設けられている。これにより、吐出口４０ａの周囲や環状の撥液層４４、４５の外部領域（環外の領域）に付着した液滴、また、吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出した液が、環状の撥液層４４、４５の内部領域（環内の領域）に侵入することが抑制されるので、各温度センサ４２に対向する検出位置に液滴が付着することを抑えることが可能となり、液適による誤検知を防止することができる。つまり、温度センサ４２は正確に処理液保持プレート４０の温度を測定することが可能となる。また、誤検知によるヒータ温度の不安定な制御を抑止することもできる。したがって、ヒータ４１の温度制御を安定させることが可能となり、処理液温度を所望温度に維持することができる。 As described above, the annular liquid repellent layers 44 and 45 are provided so as to surround the detection positions facing each temperature sensor 42 on the surface of the treatment liquid holding plate 40 on the substrate W side. As a result, the droplets adhering to the periphery of the discharge port 40a and the outer regions (outside regions) of the annular liquid repellent layers 44 and 45, and from the discharge port 40a to the surface of the treatment liquid holding plate 40 on the substrate W side. Since the outflowing liquid is suppressed from entering the internal regions (regions inside the rings) of the annular liquid repellent layers 44 and 45, it is possible to prevent droplets from adhering to the detection positions facing each temperature sensor 42. This makes it possible to prevent erroneous detection due to liquid suitability. That is, the temperature sensor 42 can accurately measure the temperature of the processing liquid holding plate 40. It is also possible to suppress unstable control of the heater temperature due to false detection. Therefore, the temperature control of the heater 41 can be stabilized, and the processing liquid temperature can be maintained at a desired temperature.

なお、処理液保持プレート４０が上昇する際に、処理液保持プレート４０の環状の撥液層４４、４５内に液滴が付着しても、処理液保持プレート４０の加熱により徐々に小さくなって蒸発する。この乾燥後も、吐出口４０ａの周囲や環状の撥液層４４、４５の外部領域に付着した液滴、また、吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出した液が、環状の撥液層４４、４５の内部領域に侵入することは環状の撥液層４４、４５により抑制されるので、検出位置に液滴が付着することを抑えることが可能となり、液適による誤検知を防止することができる。 Even if droplets adhere to the annular liquid repellent layers 44 and 45 of the treatment liquid holding plate 40 when the treatment liquid holding plate 40 rises, the droplets gradually become smaller due to the heating of the treatment liquid holding plate 40. Evaporate. Even after this drying, the droplets adhering to the periphery of the discharge port 40a and the outer regions of the annular liquid repellent layers 44 and 45, and the liquid flowing out from the discharge port 40a to the surface of the treatment liquid holding plate 40 on the substrate W side. Since the invasion into the internal region of the annular liquid repellent layers 44 and 45 is suppressed by the annular liquid repellent layers 44 and 45, it is possible to suppress the adhesion of droplets to the detection position, depending on the liquid suitability. False positives can be prevented.

以上説明したように、第３の実施形態によれば、処理液保持プレート４０の基板Ｗ側の面に、各温度センサ４２に対向するように環状の撥液層４４、４５を設けることによって、吐出口４０ａの周囲や環状の撥液層４４、４５の外部領域に付着した液滴、また、吐出口４０ａから処理液保持プレート４０の基板Ｗ側の表面に流れ出した液が環状の撥液層４４、４５の内部領域に侵入することが抑えられ、各温度センサ４２に対向する検出位置に液滴が付着することが抑制されるので、温度センサ４２は正確に処理液保持プレート４０の温度を測定することが可能となる。これにより、処理液保持プレート４０の温度、すなわちヒータ温度の制御を安定させることができる。結果として、処理液温度を所望温度に維持することが可能となり、処理不足などの品質不良の発生を抑えることができる。 As described above, according to the third embodiment, the annular liquid repellent layers 44 and 45 are provided on the surface of the treatment liquid holding plate 40 on the substrate W side so as to face each temperature sensor 42. The annular liquid-repellent layer is formed by droplets adhering to the periphery of the discharge port 40a and the outer regions of the annular liquid-repellent layers 44 and 45, and the liquid flowing out from the discharge port 40a to the surface of the treatment liquid holding plate 40 on the substrate W side. Since the invasion into the internal regions of 44 and 45 is suppressed and the droplets are suppressed from adhering to the detection positions facing each temperature sensor 42, the temperature sensor 42 accurately determines the temperature of the processing liquid holding plate 40. It becomes possible to measure. Thereby, the control of the temperature of the processing liquid holding plate 40, that is, the heater temperature can be stabilized. As a result, the temperature of the treatment liquid can be maintained at a desired temperature, and the occurrence of quality defects such as insufficient treatment can be suppressed.

なお、第３の実施形態を第１の実施形態又は第２の実施形態と組み合わせることも可能である。すなわち、吐出口４０ａの周囲に撥液層４３、４３ａを設け、温度センサ４２の周囲に撥液層４４、４５を設けることによって、処理液が吐出口４０ａの周囲に付着することや温度センサ４２の検出位置に付着することを防ぐことができる。 It is also possible to combine the third embodiment with the first embodiment or the second embodiment. That is, by providing the liquid repellent layers 43 and 43a around the discharge port 40a and providing the liquid repellent layers 44 and 45 around the temperature sensor 42, the treatment liquid adheres to the periphery of the discharge port 40a and the temperature sensor 42. It can be prevented from adhering to the detection position of.

＜第４の実施形態＞
第４の実施形態について図８を参照して説明する。なお、第４の実施形態では、第１の実施形態との相違点（撥液層の設置個所）について説明し、その他の説明を省略する。 <Fourth Embodiment>
A fourth embodiment will be described with reference to FIG. In addition, in the 4th embodiment, the difference from the 1st embodiment (the place where the liquid repellent layer is installed) will be described, and other description will be omitted.

図８に示すように、第４の実施形態に係る撥液層４６は、処理液保持プレート４０の基板Ｗ側の表面における基板Ｗと対向しない領域に設けられており、円環状に形成されている。また、撥液層４７は、処理液保持プレート４０の外周面（側面）に設けられており、円環状に形成されている。 As shown in FIG. 8, the liquid-repellent layer 46 according to the fourth embodiment is provided in a region of the surface of the treatment liquid holding plate 40 on the substrate W side that does not face the substrate W, and is formed in an annular shape. There is. Further, the liquid repellent layer 47 is provided on the outer peripheral surface (side surface) of the treatment liquid holding plate 40, and is formed in an annular shape.

撥液層４６、４７は、第１の実施形態と同様、処理液Ｓをはじく材料（例えば、ＰＦＡやＰＴＦＥなどのフッ素樹脂）により形成されている。これらの領域は、処理液Ｓに対する濡れ性が他の領域に比べ悪く、処理液Ｓの液滴が付着し難い領域である。撥液層４６、４７の材料としては、断熱材として機能するものが多い。このため、処理液保持プレート４０において基板Ｗと対向しない領域に撥液層４６、４７が設けられている。 The liquid repellent layers 46 and 47 are formed of a material that repels the treatment liquid S (for example, a fluororesin such as PFA or PTFE) as in the first embodiment. These regions have poor wettability with respect to the treatment liquid S as compared with other regions, and are regions in which droplets of the treatment liquid S are unlikely to adhere. Many of the materials of the liquid repellent layers 46 and 47 function as a heat insulating material. Therefore, the liquid repellent layers 46 and 47 are provided in the region of the treatment liquid holding plate 40 that does not face the substrate W.

ここで、撥液層４６、４７が無い場合には、処理液Ｓの液滴が処理液保持プレート４０の基板Ｗ側の表面における基板Ｗと対向しない外周領域や処理液保持プレート４０の外周面に付着することがある。処理液保持プレート４０の外周部分（前述の外周領域や外周面）は、直接ヒータ４１に接しないこと（ヒータ４１からの熱が処理液保持プレート４０の外周部分に行き渡り難いこと）、また、空気に触れることから、冷えやすいため、その外周部分に付着した液滴が蒸発し難い場合がある。この液滴が、ロボットハンドリング装置（図示せず）により基板Ｗが搬入されるとき、あるいは、搬出されるときの動作や振動などに起因して基板Ｗの表面に落下すると、ウォーターマークなどの品質不良が発生する。 Here, when the liquid repellent layers 46 and 47 are absent, the outer peripheral region on the surface of the treatment liquid holding plate 40 on the substrate W side where the droplets of the treatment liquid S do not face the substrate W or the outer peripheral surface of the treatment liquid holding plate 40. May adhere to. The outer peripheral portion of the treatment liquid holding plate 40 (the above-mentioned outer peripheral region and outer peripheral surface) does not come into direct contact with the heater 41 (heat from the heater 41 is difficult to spread to the outer peripheral portion of the treatment liquid holding plate 40), and air. Since it touches the surface, it is easy to cool, so that the droplets attached to the outer peripheral portion may be difficult to evaporate. When the droplets fall on the surface of the substrate W due to the movement or vibration when the substrate W is carried in by the robot handling device (not shown), or when the droplets are carried out, the quality such as watermarks is obtained. Defects occur.

ところが、前述のように外周領域や外周面に撥液層４６、４７を設けることで、その外周領域や外周面に液滴が付着することを抑制することが可能となるので、液適落下による品質不良の発生を抑えることができる。 However, by providing the liquid repellent layers 46 and 47 on the outer peripheral region and the outer peripheral surface as described above, it is possible to suppress the adhesion of droplets to the outer peripheral region and the outer peripheral surface. It is possible to suppress the occurrence of quality defects.

以上説明したように、第４の実施形態によれば、第１の実施形態と同様の効果を得ることができる。さらに、処理液Ｓの液滴が処理液保持プレート４０の基板Ｗ側の表面における基板Ｗと対向しない外周領域及び処理液保持プレート４０の外周面に撥液層４６、４７を設けることで、その外周領域や外周面に液滴が付着することを抑制することが可能となり、ウォーターマークなどの品質不良の発生を抑えることができる。 As described above, according to the fourth embodiment, the same effect as that of the first embodiment can be obtained. Further, by providing the liquid repellent layers 46 and 47 on the outer peripheral region where the droplets of the treatment liquid S do not face the substrate W on the surface of the treatment liquid holding plate 40 on the substrate W side and the outer peripheral surface of the treatment liquid holding plate 40, the liquid repellent layers 46 and 47 are provided. It is possible to suppress the adhesion of droplets to the outer peripheral region and the outer peripheral surface, and it is possible to suppress the occurrence of quality defects such as watermarks.

なお、処理液保持プレート４０の基板Ｗ側の表面における基板Ｗと対向しない外周領域及び処理液保持プレート４０の外周面のどちらか一方だけに撥液層を設けるようにしても良い。また、第４の実施形態を第１の実施形態や第２の実施形態、第３の実施形態などと組み合わせることも可能である。 The liquid repellent layer may be provided only on either one of the outer peripheral region of the treatment liquid holding plate 40 on the substrate W side that does not face the substrate W and the outer peripheral surface of the treatment liquid holding plate 40. It is also possible to combine the fourth embodiment with the first embodiment, the second embodiment, the third embodiment, and the like.

＜他の実施形態＞
前述の各実施形態においては、最初の処理（例えば、レジスト除去処理）を行った後に、純水での洗浄処理、ＡＰＭでの洗浄処理、更に、純水での洗浄処理の３回の洗浄処理を行うことを例示したが、これに限るものではなく、例えば、ＡＰＭの洗浄処理や１回目の純水の洗浄処理などを省略することも可能であり、その処理の内容や回数は特に限定されるものではない。 <Other Embodiments>
In each of the above-described embodiments, after the initial treatment (for example, resist removal treatment), a cleaning treatment with pure water, a cleaning treatment with APM, and a cleaning treatment with pure water are performed three times. However, the above is not limited to this, and for example, it is possible to omit the APM cleaning treatment and the first pure water cleaning treatment, and the content and number of such treatments are particularly limited. It's not something.

また、前述の各実施形態においては、処理液保持プレート４０と基板Ｗの表面との間に処理液Ｓを連続的に供給することを例示したが、これに限るものではなく、例えば、処理液保持プレート４０と基板Ｗの表面との間に処理液Ｓを保持した状態で、処理液Ｓの供給を止めることも可能である。例えば、所定温度を超えると急激に処理能力を高める特性の処理液Ｓを用いる場合などには、処理液保持プレート４０と基板Ｗの表面との間に処理液Ｓを保持した状態で、処理液Ｓの供給を止めることが望ましい。この場合、処理液Ｓの新たな供給が止められて、基板Ｗの表面上に処理液Ｓが置換されずに留めおかれ、その間加熱される処理液Ｓが前述の所定温度を超えることになる。 Further, in each of the above-described embodiments, it has been illustrated that the treatment liquid S is continuously supplied between the treatment liquid holding plate 40 and the surface of the substrate W, but the present invention is not limited to this, and for example, the treatment liquid is not limited to this. It is also possible to stop the supply of the treatment liquid S while holding the treatment liquid S between the holding plate 40 and the surface of the substrate W. For example, when a treatment liquid S having a characteristic of rapidly increasing the processing capacity when the temperature exceeds a predetermined temperature is used, the treatment liquid S is held between the treatment liquid holding plate 40 and the surface of the substrate W, and the treatment liquid S is held. It is desirable to stop the supply of S. In this case, the new supply of the treatment liquid S is stopped, the treatment liquid S is retained on the surface of the substrate W without being replaced, and the treatment liquid S heated during that time exceeds the above-mentioned predetermined temperature. ..

また、前述の各実施形態においては、処理液保持プレート４０の基板側と反対側の面に各温度センサ４２を設けることを例示したが、これに限るものではなく、例えば、処理液保持プレート４０の内部に各温度センサ４２を設けることも可能であり、処理液保持プレート４０が各温度センサ４２を内蔵するようにしても良い。 Further, in each of the above-described embodiments, it has been illustrated that each temperature sensor 42 is provided on the surface of the treatment liquid holding plate 40 on the side opposite to the substrate side, but the present invention is not limited to this, and for example, the treatment liquid holding plate 40 is provided. It is also possible to provide each temperature sensor 42 inside the processing liquid holding plate 40, and each temperature sensor 42 may be built in the processing liquid holding plate 40.

以上、本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。 Although some embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

１０ 基板処理装置
２０ 基板保持プレート
４０ 処理液保持プレート
４０ａ 吐出口
４１ ヒータ
４２ 温度センサ
４３ 撥液層
４３ａ 撥液層
４４ 撥液層
４５ 撥液層
４６ 撥液層
４７ 撥液層
６０ 昇降機構
Ｓ 処理液
Ｗ 基板 10 Substrate processing device 20 Substrate holding plate 40 Treatment liquid holding plate 40a Discharge port 41 Heater 42 Temperature sensor 43 Liquid repellent layer 43a Liquid repellent layer 44 Liquid repellent layer 45 Liquid repellent layer 46 Liquid repellent layer 47 Liquid repellent layer 60 Elevating mechanism S treatment Liquid W substrate

Claims (4)

基板を保持する基板保持部と、
前記基板保持部により保持された前記基板の上方にて、前記基板の表面に対向して離れた位置に設けられ、前記基板の表面に処理液を吐出する吐出口を有し、前記吐出口から吐出された前記処理液を前記基板保持部により保持された前記基板の表面との間に保持する処理液保持プレートと、
前記処理液保持プレートに設けられ、前記処理液保持プレートを加熱するヒータと、
前記基板保持部により保持された前記基板に対して前記処理液保持プレート及び前記ヒータを昇降させる昇降機構と、
前記処理液保持プレートにおける前記基板側の表面の一部のみに、前記吐出口を囲むように環状に設けられ、前記処理液をはじく撥液層と、を備え、
前記処理液保持プレートにおける前記基板側とは反対側の面、又は前記処理液保持プレートの内部に設けられ、前記処理液保持プレートの温度を検出する温度センサと、
前記処理液保持プレートにおける前記基板側の表面の一部のみに、前記温度センサに対向し、平面視において、前記温度センサの測温位置を囲むように設けられ、前記処理液をはじく撥液層と、をさらに備えることを特徴とする基板処理装置。 The board holding part that holds the board and
Above the substrate held by the substrate holding portion, a discharge port is provided at a position facing the surface of the substrate and discharged from the surface of the substrate, and the treatment liquid is discharged from the discharge port. A treatment liquid holding plate that holds the discharged treatment liquid between the surface of the substrate held by the substrate holding portion, and a treatment liquid holding plate.
A heater provided on the treatment liquid holding plate to heat the treatment liquid holding plate, and
An elevating mechanism for raising and lowering the processing liquid holding plate and the heater with respect to the substrate held by the substrate holding portion.
Only a part of the surface of the treatment liquid holding plate on the substrate side is provided with a liquid repellent layer which is provided in an annular shape so as to surround the discharge port and repels the treatment liquid .
A temperature sensor provided on the surface of the treatment liquid holding plate opposite to the substrate side or inside the treatment liquid holding plate to detect the temperature of the treatment liquid holding plate.
A liquid-repellent layer that faces the temperature sensor and surrounds the temperature measurement position of the temperature sensor in a plan view only on a part of the surface of the treatment liquid holding plate on the substrate side, and repels the treatment liquid. the substrate processing device characterized by further comprising the, the. 基板を保持する基板保持部と、
前記基板保持部により保持された前記基板の上方にて、前記基板の表面に対向して離れた位置に設けられ、前記基板の表面に処理液を吐出する吐出口を有し、前記吐出口から吐出された前記処理液を前記基板保持部により保持された前記基板の表面との間に保持する処理液保持プレートと、
前記処理液保持プレートに設けられ、前記処理液保持プレートを加熱するヒータと、
前記基板保持部により保持された前記基板に対して前記処理液保持プレート及び前記ヒータを昇降させる昇降機構と、
前記処理液保持プレートにおける前記基板側とは反対側の面、又は前記処理液保持プレートの内部に設けられ、前記処理液保持プレートの温度を検出する温度センサと、
前記処理液保持プレートにおける前記基板側の表面の一部のみに、前記温度センサに対向し、平面視において、前記温度センサの測温位置を囲むように設けられ、前記処理液をはじく撥液層と、
を備えることを特徴とする基板処理装置。 The board holding part that holds the board and
Above the substrate held by the substrate holding portion, a discharge port is provided at a position facing the surface of the substrate and discharged from the surface of the substrate, and the treatment liquid is discharged from the discharge port. A treatment liquid holding plate that holds the discharged treatment liquid between the surface of the substrate held by the substrate holding portion, and a treatment liquid holding plate.
A heater provided on the treatment liquid holding plate to heat the treatment liquid holding plate, and
An elevating mechanism for raising and lowering the processing liquid holding plate and the heater with respect to the substrate held by the substrate holding portion.
A temperature sensor provided on the surface of the treatment liquid holding plate opposite to the substrate side or inside the treatment liquid holding plate to detect the temperature of the treatment liquid holding plate.
A liquid-repellent layer that faces the temperature sensor and surrounds the temperature measurement position of the temperature sensor in a plan view only on a part of the surface of the treatment liquid holding plate on the substrate side, and repels the treatment liquid. When,
A substrate processing apparatus comprising. 前記処理液保持プレートの前記基板側の表面における前記基板と対向しない領域に設けられ、前記処理液をはじく撥液層をさらに備えることを特徴とする請求項１又は請求項２に記載の基板処理装置。 The substrate treatment according to claim 1 or 2 , further comprising a liquid-repellent layer that is provided on the surface of the treatment liquid holding plate on the substrate side and does not face the substrate and repels the treatment liquid. apparatus. 前記処理液保持プレートの側面に設けられ、前記処理液をはじく撥液層をさらに備えることを特徴とする請求項１から請求項３のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 3 , further comprising a liquid repellent layer provided on the side surface of the processing liquid holding plate and repelling the treatment liquid.
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