KR102028418B1 - Control apparatus for substrate liquid processing and liquid processing apparatus for substrate using the same and liquid processing method for substrate using the same - Google Patents

Control apparatus for substrate liquid processing and liquid processing apparatus for substrate using the same and liquid processing method for substrate using the same Download PDF

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Publication number
KR102028418B1
KR102028418B1 KR1020140145742A KR20140145742A KR102028418B1 KR 102028418 B1 KR102028418 B1 KR 102028418B1 KR 1020140145742 A KR1020140145742 A KR 1020140145742A KR 20140145742 A KR20140145742 A KR 20140145742A KR 102028418 B1 KR102028418 B1 KR 102028418B1
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South Korea
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chamber
substrate
unit
atmosphere
liquid processing
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KR1020140145742A
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Korean (ko)
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KR20160049228A (en
Inventor
조윤선
김한옥
노성덕
김강원
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주식회사 제우스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate liquid processing apparatus, a substrate liquid processing apparatus using the same, and a substrate liquid processing method, wherein the substrate liquid processing controller is configured to control an atmosphere of the substrate liquid processing chamber for processing the substrate. A measuring unit that measures and senses an internal atmosphere change, an air supply unit for supplying an atmospheric gas to the chamber, an exhaust unit for discharging the atmospheric gas from the chamber, and a supply amount and an exhaust amount of the air supply unit based on the detection result of the measurement unit It characterized in that it comprises a control unit for controlling the atmosphere inside the chamber by adjusting the. Therefore, the present invention by controlling the atmosphere of the chamber by the air supply unit and the discharge unit by detecting the change in the atmosphere inside the chamber by the measuring unit, thereby maintaining a constant atmosphere inside the chamber to shorten the liquid treatment time of the substrate and the liquid treatment efficiency Provides the effect to improve.

Description

CONTROL APPARATUS FOR SUBSTRATE LIQUID PROCESSING AND LIQUID PROCESSING APPARATUS FOR SUBSTRATE USING THE SAME AND LIQUID PROCESSING METHOD FOR SUBSTRATE USING THE SAME}

The present invention relates to a substrate liquid processing apparatus, a substrate liquid processing apparatus and a substrate liquid processing method using the same. More specifically, the substrate liquid processing control for controlling the atmosphere of the substrate liquid processing chamber for the liquid processing of the substrate An apparatus, a substrate liquid processing apparatus, and a substrate liquid processing method using the same.

For semiconductor device manufacturing, etching and cleaning processes are essential in forming a multilayer thin film on a substrate.

A substrate liquid processing apparatus, such as a wet type wet etching and cleaning apparatus, rotates a table provided with a chuck supporting a substrate, and supplies the processing liquid to the substrate to perform etching, cleaning and drying processes, and a cup structure around the table. The processing liquid is recovered by using the processing liquid recovery unit having the same.

On the other hand, in order to improve processing efficiency in removing thin films or photoresists such as nitride films, oxide films, and metal films deposited on the substrate from the substrate, the substrate is mainly sprayed by spraying the processing liquid onto the processing surface of the substrate at room temperature. Will be processed.

In the case of liquid treatment of the substrate at a high temperature, a heater is provided at the upper portion of the substrate or the lower portion of the table, or heated by spraying the temperature of the treatment liquid to a high temperature, or heat generated by mixing the treatment liquid immediately before the spraying after heating The substrate is subjected to the liquid treatment.

However, in the conventional substrate liquid processing apparatus, when the shutter is opened and closed in order to mount the substrate in the chamber, the atmosphere inside the chamber is changed so that excessive time is required for stabilization of the interior of the chamber. There was a problem that the liquid treatment efficiency is lowered.

In addition, even when the atmospheric gas is supplied to the inside of the chamber and stabilized, since the supply amount of the atmospheric gas is always maintained before the start of the liquid treatment process after the shutter is closed, it is not only difficult to detect a change in the atmosphere inside the chamber, but also There was a problem that excessive time is required for stabilization.

In addition, there is a problem in that leakage occurs in the shutter due to a pressure difference between the inside and the outside of the chamber when the shutter is opened, thereby damaging the chamber or adversely affecting the atmosphere inside the chamber.

The present invention has been made in order to solve the above-mentioned conventional problems, the control apparatus for a substrate liquid processing which can shorten the liquid processing time of the substrate by improving the atmosphere inside the chamber and improve the liquid processing efficiency and the same It is an object of the present invention to provide a substrate liquid processing apparatus and a substrate liquid processing method.

In addition, another object of the present invention is to provide a substrate liquid processing control device that can quickly sense the change in the atmosphere of the chamber during opening and closing of the chamber to control the atmosphere, a substrate liquid processing apparatus and a substrate liquid processing method using the same.

In addition, the present invention provides a substrate liquid processing apparatus and a substrate liquid processing apparatus and a substrate liquid processing method using the same that can stabilize the atmosphere inside the chamber by maintaining a constant pressure difference between the inside and outside of the chamber to a predetermined value. For another purpose.

In addition, the present invention provides a substrate liquid processing apparatus and a substrate liquid processing apparatus using the same, which can easily control the atmosphere of the chamber at the initial stage of the liquid processing of the substrate and at the same time improve the liquid processing time and the liquid processing efficiency of the substrate in the chamber. And another object is to provide a substrate liquid treatment method.

In addition, another object of the present invention is to provide a substrate liquid processing control apparatus capable of controlling the change of the atmosphere according to the temperature inside the chamber, a substrate liquid processing apparatus and a substrate liquid processing method using the same.

The present invention for achieving the above object, the substrate liquid processing control device for controlling the atmosphere of the substrate liquid processing chamber for the liquid processing of the substrate, measuring unit for measuring and sensing the change in the atmosphere inside the chamber; An air supply unit supplying an atmosphere gas to the chamber; An exhaust unit for discharging the atmospheric gas from the chamber; And a controller configured to control the atmosphere inside the chamber by adjusting the supply amount of the air supply unit and the discharge amount of the exhaust unit based on the detection result of the measurement unit.

The measuring unit of the present invention is characterized in that for detecting the change in the pressure difference between the pressure inside the chamber and the pressure outside the chamber by measuring the pressure inside the chamber during opening and closing of the chamber.

When the pressure difference between the inside and the outside of the chamber detected by the measuring unit is smaller than a predetermined value, the control unit of the present invention increases the supply amount of the air supply unit and reduces the discharge of the exhaust unit, and the chamber detected by the measuring unit. When the pressure difference between the inside and the outside is greater than a predetermined value, the supply amount of the air supply portion is reduced and the exhaust portion of the exhaust portion is increased.

The control unit of the present invention is characterized in that to increase the pressure difference between the inside and outside of the chamber after the chamber is closed.

In addition, the present invention provides a substrate liquid processing apparatus for supplying a processing liquid to the substrate to process the liquid, comprising: a chamber unit installed to enter and exit the substrate to provide a liquid processing space of the substrate; A table unit installed at the chamber to support and rotate the substrate; An injection unit for injecting a processing liquid onto the substrate; A recovery unit for recovering the processing liquid sprayed on the substrate; A measuring unit which measures and senses an atmosphere change of the chamber unit; An air supply unit supplying an atmosphere gas to the chamber unit; An exhaust unit for discharging the atmosphere gas from the chamber unit; And a controller configured to control the atmosphere inside the chamber by adjusting the supply amount of the air supply unit and the discharge amount of the exhaust unit based on the detection result of the measurement unit.

The measuring unit of the present invention is characterized by sensing the change in temperature by measuring the temperature inside the chamber.

The control unit of the present invention is characterized in that for controlling the temperature of the atmosphere gas supplied by the air supply unit in accordance with the temperature change in the chamber sensed by the measuring unit.

In addition, the present invention is a substrate liquid processing method for supplying a processing liquid to the substrate liquid processing, comprising: an opening step of opening the shutter to enter and exit the substrate in the chamber; An open atmosphere detection step of detecting a change in the open atmosphere of the chamber part; An open atmosphere control step of controlling an atmosphere of a chamber part based on the detected change of open atmosphere; A closing step of attaching a substrate to the chamber and closing a shutter; A closed atmosphere detecting step of detecting a change in the closed atmosphere of the chamber part; And a closed atmosphere control step of controlling the atmosphere of the chamber part based on the sensed closed atmosphere change.

As described above, the present invention is to detect the change in the atmosphere inside the chamber by the measuring unit to adjust the atmosphere of the chamber by the air supply and discharge, thereby maintaining a constant atmosphere inside the chamber to improve the liquid treatment time of the substrate It provides the effect of shortening and improving the liquid treatment efficiency.

In addition, by measuring the pressure difference between the inside and outside of the chamber by the measuring unit during the opening and closing of the chamber to detect the change in the atmosphere of the chamber, it provides an effect that can quickly sense the change in the atmosphere of the chamber during the opening and closing of the chamber to adjust the atmosphere do.

In addition, by controlling the pressure difference between the inside and outside of the chamber by changing the supply amount and the discharge amount of the atmosphere gas based on the predetermined value by the control unit, the pressure difference between the inside and outside of the chamber is kept constant at a predetermined value, It provides the effect of stabilizing the atmosphere.

In addition, by providing a substrate liquid processing apparatus in the substrate liquid processing apparatus, it is possible to easily control the atmosphere of the chamber portion at the initial stage of the liquid processing of the substrate, and to improve the liquid processing time and the liquid processing efficiency of the substrate in the chamber portion. To provide.

In addition, by measuring the temperature change in the chamber inside the measurement unit by controlling the temperature of the atmosphere gas of the air supply unit in accordance with the temperature change during opening and closing of the chamber, it provides an effect that can adjust the atmosphere change according to the temperature inside the chamber. .

1 is a block diagram showing a substrate liquid processing apparatus and a substrate liquid processing apparatus using the same according to an embodiment of the present invention.
Figure 2 is a flow chart showing a substrate liquid processing method using a substrate liquid processing control apparatus according to an embodiment of the present invention.

Hereinafter, a controller for processing a substrate liquid according to an embodiment of the present invention will be described in more detail with reference to the accompanying drawings.

1 is a block diagram showing a substrate liquid processing apparatus and a substrate liquid processing apparatus using the same according to an embodiment of the present invention, Figure 2 is a substrate using a substrate liquid processing control apparatus according to an embodiment of the present invention It is a flowchart which shows a liquid processing method.

As shown in FIG. 1, the control apparatus for processing a substrate liquid according to the present embodiment includes a measuring unit 10, an air supply unit 20, an exhaust unit 30, and a control unit 40. It is a substrate liquid processing control apparatus which controls the atmosphere of a substrate liquid processing chamber for a process. As the substrate to be treated in this embodiment, it is preferable to use a circular thin plate such as a semiconductor wafer used for a semiconductor element.

Measuring unit 10 is a measuring means for measuring and detecting the change in the atmosphere inside the chamber, it consists of a pressure sensor for measuring the pressure in the chamber to measure and detect the change in the atmosphere of the chamber during opening and closing of the chamber.

Therefore, the measurement unit 10 measures the pressure inside the chamber during opening and closing of the chamber to detect a change in pressure difference between the pressure inside the chamber and the pressure outside the chamber. However, when the pressure outside the chamber is kept constant at atmospheric pressure, the change in the pressure difference may be detected only by measuring the pressure inside the chamber.

However, when the pressure outside the chamber is unstable, a first pressure sensor 11 installed inside the chamber and a second pressure sensor 12 installed outside the chamber are provided, so that the pressure inside and outside the chamber is controlled by the first pressure sensor. Measurement by the 11 and the second pressure sensor 12, respectively, it is possible to more accurately detect the change in the pressure difference.

The first pressure sensor 11 is a measuring means for measuring the pressure change in the chamber, and the substrate supported on the table to measure the pressure change on the basis of the processing surface of the substrate W mounted on the chamber 111 ( It is preferable to be provided near the processing surface of W).

The air supply unit 20 is an air supply means for supplying the atmosphere gas to the chamber, and is provided on the upper portion of the chamber to inject the atmosphere gas from the upper portion of the chamber, and is composed of a fan filter unit (FFU). Therefore, it is possible to prevent contamination of the inside of the chamber by the outside air and at the same time reduce the contamination by the contaminants or foreign substances in the chamber.

The exhaust part 30 is an exhaust means for discharging the atmospheric gas from the chamber, and is provided in the lower part of the chamber so that the atmospheric gas is discharged below the chamber, and is composed of a discharge fan. Therefore, it is possible to improve the control speed of the atmosphere by flowing the atmosphere gas in the chamber by the downflow.

The control unit 40 is a control means for controlling the atmosphere inside the chamber by adjusting the supply amount of the air supply unit 20 and the discharge amount of the exhaust unit 30 based on the detection result of the measuring unit 10, the inside and outside of the chamber. Based on the change in the pressure difference, the amount of atmospheric gas is controlled and the amount of discharge is controlled to control the atmosphere inside the chamber to stabilize the inside of the chamber.

Specifically, when the pressure difference between the inside and the outside of the chamber detected by the measuring unit 10 is smaller than a predetermined value, that is, when the shutter of the chamber is opened to replace the substrate, the control unit 40 supplies the air supply unit 20. Increasing the supply amount of and reduces the emission of the exhaust (30).

In addition, when the pressure difference between the inside and the outside of the chamber sensed by the measuring unit 10 is greater than a predetermined value, the control unit 40 reduces the supply amount of the air supply unit 20 and increases the discharge amount of the exhaust unit 30.

Therefore, the controller 40 increases the pressure difference between the inside and the outside of the chamber after opening and closing the chamber, thereby maintaining a constant pressure inside the chamber at all times.

That is, since the supply amount of the air supply unit 20 and the discharge amount of the exhaust unit 30 are controlled to maintain a constant pressure inside the chamber, impurities such as foreign substances or fumes generated during processing of the substrate in the chamber are reduced. It is possible to shorten the stabilization time for the atmosphere inside the chamber by improving the processing efficiency of the substrate and at the same time reducing the pressure drop when replacing the substrate inside the chamber.

In addition, when the control unit 40 detects the pressure difference of the chamber by the measuring unit 10 in real time and controls the pressure, since the overload may be generated in the control unit 40, whether or not the shutter pressure is opened or closed. Of course, it is also possible to control the atmosphere inside the chamber by adjusting the supply amount and the discharge amount of the atmosphere gas by detecting.

That is, the control unit 40 sets the supply amount and the discharge amount of the atmospheric gas when the chamber is closed to a predetermined value, and sets the supply amount and the discharge amount of the atmospheric gas when the chamber is opened to a predetermined value, It is possible to eliminate the overload of the control unit 40 by changing the supply amount and the discharge amount.

Hereinafter, the substrate liquid processing apparatus using the substrate liquid processing control apparatus according to an embodiment of the present invention with reference to the accompanying drawings will be described in more detail.

As shown in FIG. 1, the substrate liquid processing apparatus according to the present embodiment includes a chamber unit 110, a table unit 120, an injection unit 130, a recovery unit 140, a measurement unit 10, and an air supply unit. It is a board | substrate liquid processing apparatus which consists of 20, the exhaust part 30, and the control part 40, and supplies a process liquid to a board | substrate, and performs liquid processing.

The measuring unit 10, the air supply unit 20, the exhaust unit 30, and the control unit 40 of the substrate liquid processing apparatus of this embodiment are the measuring unit 10 and the air supply unit of the control apparatus for substrate liquid processing of the embodiment. 20 and the same configuration as the exhaust unit 30 and the control unit 40, the same reference numerals are used in the present embodiment, and detailed description thereof will be omitted.

The chamber unit 110 is a processing space member which is installed to allow the substrate to enter and exit, and provides a liquid processing space of the substrate. The chamber unit 110 is formed in a substantially square box shape and liquids the substrate by spraying the processing liquid of the injection unit 130 therein. The processing space is partitioned for processing.

The chamber part 110 is provided in such a chamber part 110, and the shutter 112 can be opened and closed in one side of the chamber 111 so that the board | substrate W may enter and exit inside this chamber 111. FIG.

The table part 120 is a rotational support means installed in the chamber part 110 to support and rotate the substrate. The table part 120 is rotated by chucking and supporting the processing surface of the substrate W upward. Of course, it is also possible to rotate by supporting the chucking direction to face downward.

In particular, it is preferable that the table portion 120 of the present embodiment is chucked and supported so that the processing surface of the substrate W faces downward so as to spray the processing liquid from the lower portion of the substrate W by the injection portion 130. .

The injection part 130 is a supply means which injects a process liquid to the board | substrate W, and when chucking and supporting the process surface of the board | substrate W to the table part 120 upwards, It is of course installed in the upper part, and in the case of chucking and supporting the process surface of the board | substrate W to the table part 120 so that it may be provided in the lower part of the board | substrate W, of course.

It is preferable that the injection unit 130 of the present embodiment injects and supplies the processing liquid from the lower portion of the substrate W to support the table 120 by chucking and supporting the processing surface of the substrate W downward. .

The recovery unit 140 is a recovery unit provided around the outer periphery of the table unit 120 to recover the processing liquid injected onto the substrate W. The processing liquid injected onto the processing surface of the substrate W is the substrate W; Since it is discharged along the outer circumference by the centrifugal force during the rotation of the), it is formed in a cylindrical cup shape to recover it.

In addition, of course, such a collection part 140 can also be comprised by the several cup shape formed concentrically so that the process liquid supplied to the process surface of the board | substrate W may collect these, respectively.

In particular, the recovery unit 140 is installed to move relative to each other with the table unit 120, and when the processing liquids injected onto the substrate W are moved relative to each other, it is more preferably installed to recover for each processing liquid. Do.

In addition, the substrate liquid processing apparatus of the present embodiment may further include a heater W for heating the substrate W and the processing liquid when the substrate is subjected to liquid processing at a high temperature.

The heater unit 150 is a heating means for heating the substrate W. The heater unit 150 includes a plurality of heating lamps or heating coils, and is installed on the substrate W to heat the substrate W and the processing liquid.

The heater unit 150 is pivotally rotated on the upper edge of the substrate W and is installed to enter and exit the upper portion of the substrate W. Alternatively, the heater 150 may be fixedly supported on the upper portion of the substrate W. Of course it is possible.

In addition, in the case of employing the heater unit 150 or using a high temperature treatment liquid as described above, the temperature measurement unit 10 senses the temperature change of the internal atmosphere of the chamber unit 110 and controls the atmosphere temperature to the controller 40. By controlling it, it is also possible to control the atmosphere temperature at the same time as the atmosphere pressure control of the chamber 110.

Specifically, when the shutter 112 of the chamber unit 110 is opened, the temperature inside the chamber 111 decreases rapidly, and when the high temperature liquid treatment process is performed after the shutter 112 is closed, the chamber 111 of the chamber 111 is closed. Excessive time is required for the internal temperature to reach an optimal temperature state, and the atmosphere of the substrate W processed as an interval occurs during the input time of the substrate W in the chamber 110. Since the temperature can be changed, it is necessary to control the atmosphere temperature by the controller 40.

Since the control of the atmosphere temperature by the control unit 40 is not possible because the control of the air supply amount by the ffu (fan filter unit), which is simply the air supply unit 20, is insufficient and cannot be controlled, the atmospheric gas supplied through the air supply unit 20. It is desirable to add temperature control of the feed gas by further raising the temperature of.

Hereinafter, with reference to the accompanying drawings will be described in more detail a substrate liquid processing method using a substrate liquid processing control apparatus according to an embodiment of the present invention.

1 and 2, the substrate liquid processing method of the present embodiment, the opening step (S10), the open atmosphere detection step (S20), the open atmosphere control step (S30), the closing step (S40), the closed atmosphere detection It comprises a step (S50) and the closed atmosphere control step (S60), it is to control the atmosphere of the chamber portion 110 of the substrate liquid processing apparatus for supplying the processing liquid to the substrate to process the liquid.

In particular, the substrate liquid treatment method of the present embodiment, by spraying and supplying the processing liquid to the substrate while rotating the substrate by a table to perform the etching, cleaning and drying process, and to arrange the cup structure around the table to recover the processing liquid It relates to a control method of a substrate liquid processing apparatus for controlling to stabilize the internal atmosphere of the chamber portion 110 after opening and closing the shutter before the liquid processing process of the substrate.

The opening step S10 is a step of mounting the substrate 112 in the chamber part 110 by opening the shutter 112 of the chamber part 110 to open the shutter 112 of the chamber part 110. Thus, the processed substrate W is taken out and the substrate W to be processed is charged.

Open atmosphere detection step (S20), the step of detecting the change in the atmosphere inside the opening of the chamber 110, the pressure inside the chamber 110 and the outside of the chamber 110 when the chamber 110 is opened. It will detect the change in pressure difference between the pressures.

The open atmosphere control step (S30) is a step of controlling the open atmosphere of the chamber unit 110 based on the change in the atmosphere of the chamber unit 110 sensed in the open atmosphere detection step (S20). The opening atmosphere of the chamber 110 is controlled by adjusting the supply amount and the amount of the atmosphere gas to the chamber 110 according to the change in the pressure difference between the inside and the outside of the chamber 110 during opening.

In the closing step S40, the shutter 112 of the chamber part 110 is closed to accommodate the substrate W loaded in the chamber part 110, and the shutter 112 of the chamber part 110 is closed. Thus, the substrate W is charged.

The closed atmosphere detection step S50 is a step of detecting a change in the atmosphere inside when the chamber 110 is closed, and the pressure inside the chamber 110 and the outside of the chamber 110 when the chamber 110 is closed. It will detect the change in pressure difference between the pressures.

The closed atmosphere control step (S60) is a step of controlling the closed atmosphere of the chamber unit 110 based on the change in the atmosphere of the chamber unit 110 sensed in the closed atmosphere detection step (S60). The closing atmosphere of the chamber 110 is controlled by adjusting the supply amount and the amount of the atmosphere gas to the chamber 110 according to the change in the pressure difference between the inside and the outside of the chamber 110 during closing.

Therefore, the open atmosphere control step (S30) and the closed atmosphere control step (S60), the chamber portion 110 to quickly maintain the internal stabilization of the chamber portion 110 during opening and closing of the shutter 112 of the chamber portion 110. Increasing the supply amount of the atmosphere gas and decreases the discharge to increase the internal pressure of the chamber 110.

In addition, when the liquid treatment of the substrate is advanced to a high temperature state by the heater unit 150, the temperature difference by measuring the ambient temperature of the chamber unit 110 in the open atmosphere detection step (S50) and the closed atmosphere detection step (S50). By detecting the temperature in the open atmosphere control step (S30) and the closed atmosphere control step (S60) on the basis of the difference in the ambient temperature control the temperature of the heater unit 150 or the supply gas to control the atmosphere temperature of the chamber unit 110 atmosphere pressure Of course, it is also possible to proceed in parallel with the control.

As described above, according to the present invention, by measuring the atmosphere change inside the chamber by the measuring unit and controlling the atmosphere of the chamber by the air supply unit and the discharge unit, the atmosphere inside the chamber is kept constant, thereby improving the liquid treatment time of the substrate. It provides the effect of shortening and improving the liquid treatment efficiency.

In addition, by measuring the pressure difference between the inside and outside of the chamber by the measuring unit during the opening and closing of the chamber to detect the change in the atmosphere of the chamber, it provides an effect that can quickly sense the change in the atmosphere of the chamber during the opening and closing of the chamber to adjust the atmosphere do.

In addition, by controlling the pressure difference between the inside and outside of the chamber by changing the supply amount and the discharge amount of the atmosphere gas based on the predetermined value by the control unit, the pressure difference between the inside and outside of the chamber is kept constant at a predetermined value, It provides the effect of stabilizing the atmosphere.

In addition, by providing a substrate liquid processing apparatus in the substrate liquid processing apparatus, it is possible to easily control the atmosphere of the chamber portion at the initial stage of the liquid processing of the substrate, and to improve the liquid processing time and the liquid processing efficiency of the substrate in the chamber portion. To provide.

In addition, by measuring the temperature change in the chamber inside the measurement unit by controlling the temperature of the atmosphere gas of the air supply unit in accordance with the temperature change during opening and closing of the chamber, it provides an effect that can adjust the atmosphere change according to the temperature inside the chamber. .

The present invention described above can be embodied in many other forms without departing from the spirit or main features thereof. Therefore, the above embodiments are merely examples in all respects and should not be interpreted limitedly.

10: measuring unit 20: air supply unit
30: exhaust 40: control unit
110: chamber portion 120: table portion
130: injection unit 140: recovery unit
150: heater unit

Claims (8)

A control apparatus for a substrate liquid treatment for controlling the atmosphere of the substrate liquid processing chamber for the liquid treatment of the substrate,
A measuring unit measuring and detecting a change in the atmosphere inside the chamber;
An air supply unit supplying an atmosphere gas to the chamber;
An exhaust unit for discharging the atmospheric gas from the chamber; And
And a controller configured to control an atmosphere inside the chamber by adjusting a supply amount of the air supply unit and a discharge amount of the exhaust unit based on a detection result of the measurement unit.
The measuring unit measures the pressure inside the chamber during opening and closing of the chamber to detect a change in pressure difference between the pressure inside the chamber and the pressure outside the chamber, and detects whether the shutter is opened or closed,
The control unit,
When the pressure difference between the inside and the outside of the chamber sensed by the measuring unit is smaller than a predetermined value and the opening of the shutter is detected, the supply amount of the air supply unit is increased and the discharge of the exhaust unit is reduced,
When the pressure difference between the inside and the outside of the chamber detected by the measuring unit is greater than a predetermined value and the closing of the shutter is detected, the control apparatus for the substrate liquid processing, characterized in that to reduce the supply amount of the air supply portion and increase the discharge of the exhaust portion . delete delete The method of claim 1,
And the control unit increases the pressure difference between the inside and the outside of the chamber after the chamber is closed. A substrate liquid processing apparatus for supplying a processing liquid to a substrate and processing the liquid by using the substrate liquid processing control device according to claim 1,
A chamber unit installed to access the substrate and providing a liquid processing space of the substrate;
A table unit installed at the chamber to support and rotate the substrate;
An injection unit for injecting a processing liquid onto the substrate;
A recovery unit for recovering the processing liquid sprayed on the substrate;
A measuring unit which measures and senses an atmosphere change of the chamber unit;
An air supply unit supplying an atmosphere gas to the chamber unit;
An exhaust unit for discharging the atmosphere gas from the chamber unit; And
And a controller configured to control an atmosphere inside the chamber by adjusting a supply amount of the air supply unit and a discharge amount of the exhaust unit based on a detection result of the measurement unit. The method of claim 5,
The measurement unit, the substrate liquid processing apparatus, characterized in that for sensing the change in temperature by measuring the temperature inside the chamber. The method of claim 6,
The controller is a substrate liquid processing apparatus, characterized in that for controlling the temperature of the atmosphere gas supplied by the air supply unit in accordance with the temperature change in the chamber sensed by the measuring unit. A substrate liquid processing method of supplying a processing liquid to a substrate by using the substrate liquid processing apparatus according to claim 5 to perform liquid processing.
An opening step of opening the shutter to enter and leave the substrate in the chamber;
An open atmosphere detection step of detecting a change in the open atmosphere of the chamber part;
An open atmosphere control step of controlling an atmosphere of a chamber part based on the detected change of open atmosphere;
A closing step of attaching a substrate to the chamber and closing a shutter;
A closed atmosphere detecting step of detecting a change in the closed atmosphere of the chamber part; And
And a closed atmosphere control step of controlling the atmosphere of the chamber part based on the sensed change of the closed atmosphere.
KR1020140145742A 2014-10-27 2014-10-27 Control apparatus for substrate liquid processing and liquid processing apparatus for substrate using the same and liquid processing method for substrate using the same KR102028418B1 (en)

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