TW201731042A - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TW201731042A TW201731042A TW105142599A TW105142599A TW201731042A TW 201731042 A TW201731042 A TW 201731042A TW 105142599 A TW105142599 A TW 105142599A TW 105142599 A TW105142599 A TW 105142599A TW 201731042 A TW201731042 A TW 201731042A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000007789 sealing Methods 0.000 claims abstract description 45
- 239000002105 nanoparticle Substances 0.000 claims abstract description 18
- 239000002114 nanocomposite Substances 0.000 claims abstract description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000010455 vermiculite Substances 0.000 claims description 6
- 229910052902 vermiculite Inorganic materials 0.000 claims description 6
- 235000019354 vermiculite Nutrition 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000019353 potassium silicate Nutrition 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
提供一種半導體裝置,其有利於即使在高運作溫度下運作也能確保耐久性而充分發揮半導體元件的性能。一種半導體裝置,係構成為包含將由基座14所支撐的半導體元件16密封的密封層20。密封層20係以奈米複合體構造構成,該奈米複合體構造包含絕緣性奈米微粒54、及無間隙地填埋在該等絕緣性奈米微粒54周圍的非晶質矽石56,該絕緣性奈米微粒54包含許多粒徑為nm尺寸(1μm以下)的SiO2。
Description
本發明涉及半導體裝置。
近年來,正在進行使用SiC(碳化矽)的SiC半導體元件的開發。
SiC半導體元件與Si半導體元件相比,絕緣破壞電場強度較高、能隙較寬,因此作為控制大電力的功率裝置而受到注目。SiC半導體元件即使是在超過Si半導體元件的極限之150℃以上的高溫下也可以運作,理論上,即使是500℃以上也可以運作(參照專利文獻1)。
然而,為了保護半導體元件,因此半導體元件係以收納在外殼內,並且利用包含填充在外殼內部的樹脂製密封材之密封層予以密封的形態來使用。
目前,包含樹脂製密封材的密封層的耐熱溫度停留在150℃以下,若達到超過SiC半導體元件的運作溫度的150℃的高溫,則密封層會劣化而在密封層中產生間隙,不利於確保半導體裝置的耐久性。
因此,現況係不得不在其運作溫度不超過密封層的耐熱溫度的範圍內使用SiC半導體元件,在充分發揮SiC半導體元件的性能方面上有所限制。
這樣的SiC半導體元件,例如,可以在將直流電壓升壓的升壓電路、將直流電壓轉換為交流電壓的逆變器、轉換為直流電壓的換流器等的處理大電流的電力轉換電路中,作為功率裝置使用。
例如,鐵路車輛有藉由供給直流電力來行進者、和藉由供給交流電力來行進者,但任一種鐵路車輛都為了控制供給行進用馬達的交流電力而具備有逆變器,可將功率裝置用於此逆變器。
然而,如上所述,目前,包含樹脂製密封材的密封層的耐熱溫度停留在150℃以下,因此隨著鐵路車輛的行進,逆變器的功率裝置係其運作溫度超過150℃,造成因密封層的劣化所引起之功率裝置的故障。
近年來,鐵路車輛的事故大多是因伴隨這種運作溫度的上升之密封層的劣化而引起功率裝置的故障所造成的事故,由於花費了許多精力和成本在修理上,因此期盼能有所改善。
伴隨這種運作溫度的上升之功率裝置的故障,與上述一樣也會發生在具備供驅動行進用馬達用的逆變器的電動汽車、具備將用太陽能電池發電的直流電力轉換為商用的交流電力的逆變器的發電設施等方面,期盼獲得改善。
另一方面,本案申請人提出並註冊有物理性、化學性強度優異的絕緣材料(參照專利文獻2)。
專利文獻1 日本特開2011-80796號公報
專利文獻2 日本專利第5281188號公報
本發明人發現了上述絕緣材料,除了有優異的物理性、化學性強度外,還具有超過250℃的耐熱溫度。
本發明係著眼於上述絕緣材料的耐熱性所完成的發明,目的在於提供一種半導體裝置,其即使在高運作溫度下運作也能確保耐久性而有利於充分發揮半導體元件的性能。
為了解決上述課題,請求項1記載的發明係一種半導體裝置,具備:半導體元件;收納前述半導體元件的外殼;在前述外殼的內部支撐前述半導體元件且發揮作為將在前述半導體元件所發出的熱進行散熱的散熱構件的功能的基座;配設在前述外殼內部而與前述半導體元件電性連接的配線構件;和填充在前述外殼內部而將前述半導體元件、前述配線構件密封的密封層,該半導體裝置的特徵為,前述密封層係用奈米複合體構造構成,該奈米複合體構造係包含絕緣性奈米微粒、及無間隙地填埋在該等絕緣性奈米微粒周圍的非晶質矽石,該絕緣性奈米微粒包含粒徑為1μm以下的SiO2。
根據本發明,若製成將半導體元件用作例如功率裝置的半導體裝置,則即使是在流通大電流或者是進行高速動作而運作溫度超過150℃的情況下,也沒有密封層熱劣化的情形發生,有利於充分發揮半導體元件的功能且確保耐久性。
由此,有利於大幅削減因功率裝置的故障所引起的鐵路車輛、電動汽車、發電設施等的事故。
10‧‧‧半導體裝置
12‧‧‧外殼
16‧‧‧半導體元件
1602‧‧‧基板
1604‧‧‧接合電極
18‧‧‧配線構件
20‧‧‧密封層
22‧‧‧接合層
50‧‧‧絕緣性的構件
52‧‧‧凹部
54‧‧‧絕緣性奈米微粒
56‧‧‧非晶質矽石
第1圖係本實施形態的半導體裝置的剖面圖。
第2圖(A)係在絕緣性的構件50設置凹部52,在此凹部52形成密封層20的說明圖、第2圖(B)係第2圖(A)的矩形框部分的放大圖、第2圖(C)係第2圖(B)的矩形框部分的放大圖。
接著,參照圖式說明本實施形態的半導體裝置。
如第1圖所示,半導體裝置10係構成為包含外殼12、基座14、半導體元件16、配線構件18、密封層20、和接合層22。
本實施形態中,接合層22係構成為除了將半導體元件16的接合電極1604和配線構件18接合的第3接合層22C外,還包含第1接合層22A、第2接合層22B。
外殼12係用上下開口的框狀側壁1202構成,在側壁1202的內側形成有收納半導體元件16的收納空間24。
作為外殼12,可以採用非導電性的陶瓷材料等現有公知的各種材料。
外殼14支撐半導體元件16,可用導熱性優異的材料形成。
本實施形態中,基座14具備有基座本體1402、和中間板部1404。
基座本體1402係將框狀側壁1202的下部的開口堵塞。
可以使用導熱性優異的陶瓷材料、金屬材料作為基座本體1402。
中間板部1404係用比基座14的上面還要小一圈的輪廓形成。
中間板部1404具有:第1板部1404A,位於基座本體1402側且透過第1接合層22A接合於基座本體1402的上面;和第2板部1404B,在第1板部1404A上與第1板部1404A一體地形成。
第1板部1404A係用導熱性優異的陶瓷材料構成,第2板部1404B係用導熱性優異的金屬材料構成。
又,基座14的構造不限於上述構造,若為效率佳地傳導半導體元件16的熱,有效地發揮作為半導體元件16的散熱構件的功能的構造的話即可,可以是用單一的金屬材料、或者是單一的陶瓷材料所構成的構造。
半導體元件16,係構成將直流電壓升壓的升壓電路、將直流電壓轉換為交流電壓的逆變器、轉換為直流電壓的換流器等的電力轉換電路中所使用的功率裝置者,具備有進行大電流的切換(switching)的切換元件,也可以為了驅動切換元件而進一步具備需要的二極體、被動元件。
本實施形態中,半導體元件16係用與Si半導體元件16相比,絕緣破壞電場強度較高、能隙較寬,即使是在超過Si半導體元件16的極限的150℃以上的高溫下也可以運作且理論上,即使是500℃以上也可以運作的SiC半導體元件16構成。
半導體元件16係在用SiC所構成的基板1602上構成,在基板1602的上面形成有複數個接合電極1604。
複數個接合電極1604包含:與半導體裝置10的外部的電源及負載連接而流通大電流的電極、和與半導體裝置10的外部的控制電路連接而流通驅動切換元件的驅動訊號的電極。
該等接合電極1604,係用例如Al、Cu、Ni、Au、Ag、Ti或包含它們的合金構成。
半導體元件16係將與接合電極1604為相反側的面重疊在中間板部1404的第2板部1404B而透過第2接合層22B接合,從而由基座14所支撐。
配線構件18係按半導體元件16的各接合電極1604設置,配線構件18的一端係透過第3接合層22C對接合電極1604進行電性連接,配線構件18的另
一端係貫通外殼12的側壁1202而與設置在外殼12外部的連接端子26電性連接。
連接端子26係與半導體裝置10的外部的電源、負載、半導體裝置10的外部的控制電路連接。
又,連接端子26的形狀、配置位置是任意的。
而且,在收納空間24內用以密封半導體元件16、中間板部1404、配線構件18的密封空間24A形成有密封層20。
即,密封層20係將密封材填充於外殼12的內部而形成,密封層20係配置在收納空間24的內部而密封由外殼14所支撐的半導體元件16。
接著,參照第2圖,說明配置在密封空間24A,且密封由外殼14所支撐的半導體元件16之密封層20。
第2圖(A)係在絕緣性的構件50設置凹部52,在此凹部52形成密封層20的圖,第2圖(B)顯示第2圖(A)的矩形框部分的放大圖,第2圖(C)顯示第2圖(B)的矩形框部分的放大圖。
如第2圖(C)所示,密封層20係用奈米複合體構造構成,該奈米複合體構造係包含絕緣性奈米微粒54、和無間隙地填埋在該等絕緣性奈米微粒54周圍的非晶質矽石(silica)56,該絕緣性奈米微粒54包含許多粒徑為nm尺寸(1μm以下)的SiO2。
即,密封層20係用許多絕緣性奈米化微粒(SiO2)54、和SiO2微粒的反應化合物(非晶質矽石56)構成。
換言之,密封層20係用許多絕緣性奈米微粒(SiO2微粒)54、和以該等許多絕緣性奈米微粒為骨材而填埋在它們周圍的Si-O鍵(非晶質矽石56)的複合組織的奈米複合體構造構成。
由於密封層20包含非晶質矽石56,即包含SiO2的經玻璃化者,因此成為內部沒有間隙、空洞、龜裂等缺陷的密封層20,能形成對外殼12、基座14、半導體元件16、配線構件18、第1接合層22A、第2接合層22B、第3接合層22C的緊貼強度高的高可靠性的密封層20。
密封層20,係例如,藉由將混合有許多絕緣性奈米微粒54的液體玻璃(SiO2)填充於密封空間24A,使液體玻璃硬化來形成。
或者是,藉由將日本專利第5281188號的絕緣糊填充於密封空間24A,使絕緣糊硬化來形成。在日本專利第5281188號中所記載的絕緣糊中,可使用本發明之包含SiO2的絕緣性奈米微粒作為絕緣性奈米微粒,在絕緣糊中,除此之外還包含有Si微粒、和液狀的有機Si化合物。
液體玻璃、絕緣性糊的硬化,例如,較佳為能夠藉由在真空氣體環境中,在130℃~150℃的溫度範圍內進
行加熱來進行。之後,較佳為包含一邊加壓一邊冷卻的步驟。藉由此步驟,能夠將密封層20緻密化,能夠提高對外殼12、基座14、半導體元件16、配線構件18、第1接合層22A、第2接合層22B、第3接合層22C的緊貼力。
由此,密封層20係液體玻璃、絕緣性糊的燒成物。
密封層20係用絕緣性奈米微粒54、和構成玻璃的非晶質矽石56的複合組織的複合體構造形成,因此體積增加,成為外殼12的內部沒有間隙、空洞、龜裂等缺陷之高可靠性的密封層20。即,反應成形後體積能增加數%左右,能避免空洞、間隙或龜裂的產生等。
本實施形態的密封層20能得到如下的效果。
(a)物理性、化學性強度優異,而且具有超過250℃的耐熱溫度的耐熱性優異,具有達到600℃左右不產生剝離、斷線的耐熱性。
(b)能簡單地、確實地形成密封層20。
(c)在密封層20的內部沒有間隙、空洞、龜裂等缺陷,具有高可靠性。
由此,根據本實施形態,密封層20係物理性、化學性強度優異的絕緣性材料,並且具有超過250。℃的耐熱性。
因此,若製成將半導體元件16用作例如功率裝置的半導體裝置10,則即使是在流通大電流或者是進行高速動作而運作溫度超過150℃的情況下,也沒有密封層20
熱劣化的情形發生,有利於充分發揮半導體元件16的功能且確保耐久性。
由此,有利於提升鐵路車輛、電動汽車、發電設施等中所使用的逆變器的性能並確保耐久性,有利於大幅減少因功率裝置的故障所引起的鐵路車輛、電動汽車、發電設施等的事故。
20‧‧‧密封層
50‧‧‧絕緣性的構件
52‧‧‧凹部
54‧‧‧絕緣性奈米微粒
56‧‧‧非晶質矽石
Claims (2)
- 一種半導體裝置,具備:半導體元件;外殼,收納該半導體元件;基座(base),在該外殼的內部支撐該半導體元件且發揮作為將在該半導體元件所發出的熱進行散熱的散熱構件的功能;配線構件,配設在該外殼內部而與該半導體元件電性連接;及密封層,填充在該外殼內部而密封該半導體元件、該配線構件,該半導體裝置的特徵為,該密封層係以奈米複合體構造所構成,該奈米複合體構造係包含絕緣性奈米微粒、及無間隙地填埋在該等絕緣性奈米微粒周圍的非晶質矽石,該絕緣性奈米微粒包含粒徑為1μm以下的SiO2。
- 如請求項1的半導體裝置,其中該半導體元件係構成功率裝置。
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