TW201724568A - 用於晶片接合之基準標記 - Google Patents

用於晶片接合之基準標記 Download PDF

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Publication number
TW201724568A
TW201724568A TW105128244A TW105128244A TW201724568A TW 201724568 A TW201724568 A TW 201724568A TW 105128244 A TW105128244 A TW 105128244A TW 105128244 A TW105128244 A TW 105128244A TW 201724568 A TW201724568 A TW 201724568A
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Taiwan
Prior art keywords
lesd
conductive
flexible
conductive pad
mounting area
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TW105128244A
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English (en)
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祥心 符
艾利珍卓 艾爾德瑞二世 阿卡歐力 那瑞葛
小杉浩充
萊維 潘菈尼西娃
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３Ｍ新設資產公司
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Publication of TW201724568A publication Critical patent/TW201724568A/zh

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Abstract

一種用於安裝一發光半導體裝置(LESD)之撓性多層構造，其包括一具有一LESD安裝區之撓性介電基材、設置於該LESD安裝區中之第一及第二導電墊(用於電氣連接至一受納在該LESD安裝區中之LESD的對應第一及第二導電端子)、及一用於一LESD在該LESD安裝區中之精確布局的第一對齊基準標記。該第一對齊基準標記設置於該LESD安裝區內。

Description

用於晶片接合之基準標記
撓性電路及總成常在各式電子設備應用中用作為連接器，該等應用係諸如印表機、電腦、螢幕、及類似者。相較於以前使用之剛性電路板，此等電路在可撓性及空間節省方面皆提供更多益處。
在LED附接至撓性電路及總成之處，可使用附接技術。已將各式晶粒附接技術用於例如倒裝晶片晶粒，該等晶粒附接技術包括使用銲點凸塊及共晶接合之附接，因為對於附接材料(因而對應地成本較低)及性能之需求較低以及較佳的可靠性而使該等晶粒附接技術具有吸引力。共晶接合一般透過金與錫之金屬間接合而發生。然而儘管接合製程有該等優點，但其仍需要晶座(die pad)與待附接LED之間有高度布局精確度。
本揭露關於一種用於安裝一發光半導體裝置(LESD)之撓性多層構造。一對齊基準標記係設置在該撓性多層構造之一LESD安裝區內。該對齊基準標記可設置在第一或第二導電墊之一內部周緣 內，該等導電墊可耦接至一LESD之端子。在一些實施例中，該基準標記在該導電墊中形成一溝槽並且係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD的一第一導電端子之一側延伸，使得當該第一導電端子使用自該第一導電端子朝向該第一溝槽流出之導電材料來電氣連接至該第一導電墊時，該第一溝槽係夠深且夠寬以使得流出之該第一導電端子的一顯著部分至少部分填充該第一溝槽。
在一個態樣中，本說明關於一種用於安裝一發光半導體裝置(LESD)之撓性多層構造。此構造包括一用於安裝一發光半導體裝置(LESD)之撓性多層構造，包括一具有一LESD安裝區之撓性介電基材、設置於該LESD安裝區中之第一和第二導電墊(用於電氣連接至一受納在該LESD安裝區中之LESD的對應第一和第二導電端子)、及一用於一LESD在該LESD安裝區中之精確布局的第一對齊基準標記。該第一對齊基準標記設置於該LESD安裝區內。
在另一態樣中，本說明係關於一種LESD封裝。該LESD封裝包括本文中所述之該撓性多層構造及一安裝在該撓性介電基材之LESD安裝區中的LESD。該LESD具有一電氣連接至該第一導電墊之第一導電端子和一電氣連接至該第二導電墊之第二導電端子。該第一對齊基準標記之至少一部分在該LESD封裝之一平面圖中係可見的。
在另一個態樣中，本說明關於一種用於安裝一發光半導體裝置(LESD)之撓性多層構造。該構造包括一撓性介電基材及第一和第二導電墊，該撓性介電基材包含相對之頂部和底部主表面及一在該 頂部主表面上以用於受納一LESD之LESD安裝區，該等第一和第二導電墊設置在該LESD安裝區中以用於電氣連接至一受納在該LESD安裝區中之LESD的對應第一和第二導電端子。一或多個溝槽係形成在該第一導電墊中且在該等第一及可選地第二導電墊之一周緣的一內部內。該一或多個溝槽之各者係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD的一第一導電端子之一側延伸，使得當該第一導電端子使用自該第一導電端子朝向該一或多個溝槽流出之導電材料來電氣連接至該第一導電墊時。該一或多個溝槽係夠深且夠寬以使得流出之該第一導電端子的一顯著部分至少部分填充該一或多個溝槽。
在進一步態樣中，本說明關於一種製造一用於安裝一發光半導體裝置(LESD)之撓性多層構造之方法。該方法包括提供一撓性介電基材，該撓性介電基材具有相對之頂部和底部主表面且在該撓性介電基材之該頂部主表面上界定一LESD安裝區以用於受納一LESD。然後該方法包括形成一對應於該LESD安裝區中之一第一對齊基準標記之圖案，並且在該撓性介電基材之頂部主表面上的LESD安裝區中形成第一及第二導電墊以用於電氣連接至一受納於該LESD安裝區中之LESD的對應第一和第二導電端子。該第一導電墊接界該第一基準標記之一周緣。然後該方法包括移除該圖案而生成一形成在該第一導電墊之一周緣的一內部內之第一對齊基準標記。
這些以及多種其他特徵與優點將因研讀下面的詳細說明而明顯可知。
100‧‧‧撓性LESD總成/發光半導體裝置(LESD)/撓性多層構造
110‧‧‧撓性介電基材
112‧‧‧頂部主表面
114‧‧‧底部主表面
120‧‧‧LESD安裝區
130‧‧‧第一導電墊/第一導電端子
135‧‧‧導電填充導通孔/第一導電填充導通孔
140‧‧‧第二導電墊/第二導電端子
145‧‧‧導電填充導通孔/第二導電填充導通孔
150‧‧‧對齊基準標記
151‧‧‧對齊基準標記/第一溝槽/溝槽
152‧‧‧對齊基準標記/第二溝槽/溝槽
153‧‧‧對齊基準標記/溝槽
154‧‧‧對齊基準標記/溝槽
155‧‧‧對齊基準標記/溝槽
156‧‧‧對齊基準標記/溝槽
160‧‧‧周緣
165‧‧‧內部
170‧‧‧周緣
175‧‧‧內部
2-2‧‧‧線
200‧‧‧LESD
210‧‧‧第一導電端子
215‧‧‧第一導電材料
220‧‧‧第二導電端子
225‧‧‧第二導電材料
由於結合隨附圖式與以下本揭露之各個實施例的實施方式可更完整理解本揭露，其中：圖1係根據本說明之撓性LESD總成的示意俯視平面圖；圖2係圖1之撓性LESD總成沿線2-2擷取的示意剖面圖；圖3係根據本說明之撓性LESD總成的示意透視圖；及圖4係圖3之已裝配撓性LESD總成之橫剖部分示意透視圖。
下文實施方式將參考構成本說明書之一部分的隨附圖式，而且在其中以圖解說明的方式呈現數個具體實施例。需瞭解的是，可設想出並實現其他實施例而不偏離本揭露的範疇或精神。因此，以下之詳細敘述並非作為限定之用。
除非另有指明，本文中所用所有科學以及技術詞彙具本發明所屬技術領域中所通用的意義。本文所提出的定義是要增進對於本文常用之某些詞彙的理解，並不是要限制本揭露的範疇。
除非另有所指，本說明書及申請專利範圍中用以表示特徵之尺寸、數量、以及物理特性的所有數字，皆應理解為在所有情況下以用語「約(about)」修飾之。因此，除非另有相反指示，否則在前面說明書以及隨附申請專利範圍中所提出的數值參數為近似值，其可依據所屬技術領域中具有通常知識者所欲之特性運用在本文中所揭示之教示而變化。
由端點表述的數值範圍包括在該範圍之內包含的所有數字(例如，1至5包括1、1.5、2、2.75、3、3.80、4、及5)以及該範圍內的任何範圍。
如本說明書以及隨附申請專利範圍中所使用，除非內文明確地另有所指，單數形「一(a/an)」以及「該(the)」涵蓋具有複數個指稱物(referents)的實施例。
如本說明書以及隨附申請專利範圍中所使用，「或(or)」一詞一般是用來包括「及/或(and/or)」的意思，除非內文明確另有所指。
如本文中所使用，「具有(have,having)」、「包括(include,including)」、「包含(comprise,comprising)」或諸如此類係以其開放式意義使用，且一般意指「包括但不限於(including,but not limited to)」。應理解，「基本上由...組成(consisting essentially of)」、「由...組成(consisting of)」、以及類似用語係歸於「包含(comprising)」以及類似用語中。
若在本文中使用空間相關用語，包括但不限於「下(lower)」、「上(upper)」、「之下(beneath)」、「下方(below)」、「上方(above)」、以及「上面(on top)」，是為了便於描述一元件與其他元件的空間關係。除了圖中所繪示及本文所述之特定定向之外，此類空間相關用語還涵蓋了裝置於使用或操作中的不同定向。例如，若圖中繪示之物體經倒轉或翻轉，先前描述為在其他元件下面或之下的部分，會變成在該等其他元件的上方。
如本文中所使用，當一元件、組件或層例如描述成與另一元件、組件或層形成一「重合介面」、在另一元件、組件或層「上」、或者是「連接至」、「耦合於」、「堆疊於」或「接觸」另一元件、組件或層，此可為直接在其上、直接連接至、直接耦合於、直接堆疊於、直接接觸，或例如中介元件、組件、或層可能在該特定元件、組件、或層上，或者是中介元件、組件、或層可能連接、耦合或接觸該特定元件、組件或層。例如，當一元件、組件或層被稱為「直接位於」另一元件「上」、「直接連接至」或「直接耦合至」另一元件、或「直接與」另一元件「接觸」時，則舉例來說，不存在任何中間元件、組件或層。
本揭露關於一種撓性發光半導體裝置(LESD)總成。特定而言，本揭露關於一種用於安裝一發光半導體裝置(LESD)之撓性多層構造。一對齊基準標記係設置在該撓性多層構造之一LESD安裝區內。該對齊基準標記可設置在第一或第二導電墊之一內部周緣內，該等導電墊可耦接至一LESD之端子。在一些實施例中，該基準標記在該導電墊中形成一溝槽並且係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD的一第一導電端子之一側延伸，使得當該第一導電端子使用自該第一導電端子朝向該第一溝槽流出之導電材料來電氣連接至該第一導電墊時，該第一溝槽係夠深且夠寬以使得流出之該第一導電端子的一顯著部分至少部分填充該第一溝槽。雖然未如此限制本揭露，但透過討論下文提供之實例，將獲得對本揭露之各種態樣之理解。
圖1係根據本說明之一撓性LESD總成100的示意俯視平面圖。圖2係圖1之撓性LESD總成100沿線2-2擷取的示意剖面圖。
用於安裝一發光半導體裝置(LESD)100之撓性多層構造包括一撓性介電基材110，該基材具有相對之頂部和底部主表面112、114及一在該頂部主表面112上以用於受納一LESD 200之LESD安裝區120。該LESD可包括發光二極體或雷射二極體。
在許多實施例中，撓性介電基材110係由聚合物材料所形成。在一些實施例中，撓性介電基材係由聚醯亞胺所形成。在其他實施例中，撓性介電基材係由任意其他諸多適當之撓性聚合物所形成，該等適當撓性聚合物包括但不限於聚苯二甲酸乙二酯(PET)、液晶聚合物、聚碳酸酯、聚醚醚酮、或熱塑性聚合物。
一第一導電墊130和一第二導電墊140係位在或設置在LESD安裝區120中以用於電氣連接至一受納在LESD安裝區120中之LESD 200的一對應第一導電端子210和一第二導電端子220。
一對齊基準標記150係設置在或位在LESD安裝區120內。對齊基準標記150提供一LESD 200在LESD安裝區120中之精確布局。撓性LESD總成100可如所欲地包括二或更多個對齊基準標記150。
雖然圖1中在第一導電墊130上繪示兩個對齊基準標記150，但請瞭解到亦可僅在第二導電墊140上設置一或多個對齊基準標 記。在一些實施例中，對齊基準標記可設置在第一導電墊130和第二導電墊140兩者上。
在許多實施例中，一或多個對齊基準標記150係設置在第一和/或第二導電墊130、140之一周緣160、170的一內部165、175內。在一些實施例中，對齊基準標記150係設置在第一和第二導電墊130、140之間。在這些實施例中，對齊基準標記150可係電絕緣的。一或多個對齊基準標記150可延伸進入第一和/或第二導電墊130、140中並在該等導電墊中成一或多個凹部，或者可自第一及/或第二導電墊130、140向外延伸並形成一或多個自該等導電墊突起之突起部。一或多個對齊基準標記150可獨立係導電的或電絕緣的。
在其中該對齊基準標記在該第一導電墊中形成一凹部之實施例中，該凹部可以任意諸多方式形成。在這些實施例之一些者中，該對齊基準標記藉由移除一些該第一導電墊而在該第一導電墊中形成一凹部。在其他實施例中，該對齊基準標記藉由在該第一對齊基準標記周圍電鍍金屬而在該第一導電墊中形成一凹部。
在對齊基準標記形成自該第一導電墊突起之突起部之實施例中，該突起部可以任意諸多方式形成。在這些實施例之一些者中，該對齊基準標記藉由在該第一導電墊上沉積一圖案而形成自該第一導電墊突起之突起部。在其他實施例中，該對齊基準標記藉由移除一些該第一導電墊而形成自該第一導電墊突起之突起部。
在許多實施例中，該用於安裝一發光半導體裝置(LESD)100之撓性多層構造包括二或更多個對齊基準標記150，該等對齊基準 標記150係彼此間隔開來並且設置在LESD安裝區120內或設置在第一及/或第二導電墊130、140之周緣160、170的內部165、175內。在一些實施例中，一第一對齊基準標記150係設置在或位在第一導電墊130之周緣160的內部165內並且一第二對齊基準標記150係設置在或位在第二導電墊140之周緣170的內部175內。
一LESD封裝包括本文中所述之撓性多層構造100及安裝在撓性介電基材110之LESD安裝區120中的LESD 200。LESD 200可包括一電氣連接至第一導電墊130之第一導電端子210和一電氣連接至第二導電墊140之第二導電端子220。在許多實施例中，對齊基準標記150之至少一部分在該LESD封裝之平面圖(請參見圖1)中係可見的。在一些實施例中，整個對齊基準標記150在該LESD封裝之平面圖中係可見的。
在LESD 200係一倒裝晶片型發光半導體裝置之實施例中，第一導電材料215係設置在第一導電端子210與第一導電墊130之間且將第一導電端子210連接至第一導電墊130，並且第二導電材料225係設置在第二導電端子220與第二導電墊140之間且將第二導電端子220連接至第二導電墊140。第一和第二導電材料215、225可獨立係由例如導電膏、導電黏著劑、或銲點凸塊之一或多者所形成。
在LESD 200係一線接合型發光半導體裝置之實施例中，第一導電線將該第一導電端子連接至第一導電墊130，並且一第二導電線將第二導電端子連接至第二導電墊140。
撓性多層構造100可進一步包括複數個形成在LESD安裝區120中之導通孔(via)。各導通孔在頂部和底部主表面112、114之間延伸並經導電材料填充以形成複數個導電填充導通孔135、145。一第一導電填充導通孔135係電氣連接至第一導電墊130。一第二導電填充導通孔145係電氣連接至第二導電墊140。
圖3係根據本說明之撓性LESD總成100的示意透視圖。圖4係圖3之已裝配撓性LESD總成100之橫剖部分的示意透視圖。圖3繪示自LESD安裝區120拆解出來之LESD 200。
該用於安裝一發光半導體裝置(LESD)100之撓性多層構造包括一撓性介電基材110，該基材具有相對之頂部及底部主表面112、114及一在該頂部主表面112上以用於受納一LESD 200之LESD安裝區。該LESD可包括發光二極體或雷射二極體。
一第一導電墊130和一第二導電墊140係位在或設置在該LESD安裝區中以用於電氣連接至一受納在該LESD安裝區中之LESD 200的一對應第一導電端子210和一第二導電端子220。
在這些實施例中，對齊基準標記151、153、155在該第一導電墊130中形成一第一溝槽並且係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的一第一導電端子210之一第一側延伸，使得當第一導電端子210使用自第一導電端子210朝向第一溝槽151流出之導電材料來電氣連接至第一導電墊130時，第一溝槽151係夠深且夠寬以使得流出之該第一導電端子的一顯著部分至少部分填充第一溝槽151。
同樣地，對齊基準標記152、154、156在第二導電墊140中形成一第二溝槽並且係經調適以緊鄰並沿著一安裝在LESD安裝區中之LESD 200的一第二導電端子220之一第一側延伸，使得當第二導電端子220使用自第二導電端子220朝向第二溝槽152流出之導電材料來電氣連接至第二導電墊140時，第二溝槽152係夠深且夠寬以使得流出之該第二導電端子的一顯著部分至少部分填充第二溝槽152。
一或多個對齊基準標記151、152、153、154、155、156係形成一或多個溝槽之凹部，使得在將該LESD電氣連接至該撓性電路的過程中，導電材料(例如：銲料)可自導電端子流出。在此時，LESD可自其原始位置移動並隨著導電材料漂移。沿該LESD之導電端子定位的溝槽之一個有用關鍵效果係限制該LESD之移動。
在許多實施例中，該對齊基準標記包括在第一導電墊130中之二或三個溝槽151、153、155，該等溝槽係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的第一導電端子210之二或三個側延伸。在一些實施例中，各溝槽151、153、155係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的一第一導電端子210之一不同側延伸。如圖3中所繪示。
在許多實施例中，該對齊基準標記包括在第二導電墊140中之二或三個溝槽152、154、156，該等溝槽係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的第二導電端子220之二或三個側延伸。在一些實施例中，各溝槽152、154、156係經調適 以緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的一第二導電端子220之一不同側延伸。如圖3中所繪示。
一或多個溝槽151、153、155可形成在第一導電墊130中且在第一導電墊130之一周緣的一內部內。一或多個溝槽151、153、155之各者可緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的一第一導電端子210之一側延伸，使得當第一導電端子210使用自第一導電端子130朝向一或多個溝槽151、153、155流出之導電材料來電氣連接至第一導電墊130時，一或多個溝槽151、153、155係夠深且夠寬以使得流出之該第一導電端子210的一顯著部分至少部分填充該一或多個溝槽。
同樣地，一或多個溝槽152、154、156可形成在第二導電墊140中且在第二導電墊140之一周緣的一內部內。一或多個溝槽152、154、156之各者可緊鄰並沿著一安裝在該LESD安裝區中之LESD 200的一第二導電端子220之一側延伸，使得當第二導電端子220使用自第二導電端子140朝向一或多個溝槽152、154、156流出之導電材料來電氣連接至第二導電墊140時，一或多個溝槽152、154、156係夠深且夠寬以使得流出之該第二導電端子220的一顯著部分至少部分填充該一或多個溝槽。
在許多實施例中，當第一導電端子210係電氣連接至第一導電墊130時，在平面圖中，各溝槽151、153、155之至少一部分係在該LESD之一外邊界外。在這些實施例之一些者中，各溝槽 151、153、155在平面圖中係可見的。在精選實施例中，整個溝槽151、153、155在平面圖中係可見的。
本文中所述之對齊基準標記可藉由任何有用方式形成。如上所述，在形成導電墊時可將材料移除或可不設置該材料以形成對齊基準標記，或者可將材料添加至導電墊以形成對齊基準標記。
形成一用於安裝一發光半導體裝置(LESD)之撓性多層構造之一說明性方法包括，提供一具有相對之頂部和底部主表面112、114的撓性介電基材110，並且在撓性介電基材110之頂部主表面112上界定一用於受納一LESD 200之LESD安裝區120。
然後在該LESD安裝區中形成對應於一第一對齊基準標記之一圖案，並且在該LESD安裝區中形成第一及第二導電墊130、140以用於電氣連接一LESD 200之對應第一及第二導電端子210、220。第一導電墊130接界該第一基準標記之一周緣。在許多實施例中，該形成第一及第二導電墊130、140之步驟包括將金屬電鍍至撓性介電基材110上。
然後該方法包括移除該圖案而生成一形成在該第一導電墊130之一周緣的一內部內之第一對齊基準標記150。
因此，所揭示者係「用於晶片接合之基準標記」之實施例。
在此特以引用之方式將本文所引述之所有參考文件以及出版品之全文明示納入本揭露中，除非其內容可能與本揭露直接抵觸。雖然具體實施例已經在本文中進行說明及描述，但所屬技術領域 中具有通常知識者將瞭解可以各種替代及/或均等實施來替換所示及所描述的具體實施例，而不偏離本揭露的範疇。本申請案意欲涵括本文所討論之特定具體實施例的任何調適形式或變化形式。因此，本揭露意圖僅受限於申請專利範圍及其均等者。本文所揭示之實施例僅為說明性目的而非限制性。
100‧‧‧撓性LESD總成/發光半導體裝置(LESD)/撓性多層構造
110‧‧‧撓性介電基材
120‧‧‧LESD安裝區
130‧‧‧第一導電墊/第一導電端子
140‧‧‧第二導電墊/第二導電端子
150‧‧‧對齊基準標記
160‧‧‧周緣
165‧‧‧內部
170‧‧‧周緣
175‧‧‧內部
200‧‧‧LESD

Claims (10)

  1. 一種用於安裝一發光半導體裝置(LESD)之撓性多層構造，其包含：一撓性介電基材，其包含相對之頂部和底部主表面及一在該頂部主表面上以用於受納一LESD之LESD安裝區；第一和第二導電墊，其等設置在該LESD安裝區中以用於電氣連接至一受納在該LESD安裝區中之LESD的對應第一和第二導電端子；及一第一對齊基準標記，其用於一LESD在該LESD安裝區中之精確布局，該第一對齊基準標記設置在該LESD安裝區內。
  2. 如請求項1之撓性多層構造，其中該第一對齊基準標記係設置在該等第一和第二導電墊之一者的一周緣之一內部內。
  3. 如請求項1之撓性多層構造，其中該第一對齊基準標記在該第一導電墊中形成一凹部。
  4. 一種LESD封裝，其包含：如請求項1之撓性多層構造；一LESD，其安裝在該撓性介電基材之該LESD安裝區中，該LESD具有一電氣連接至該第一導電墊之第一導電端子和一電氣連接至該第二導電墊之第二導電端子，其中該第一對齊基準標記之至少一部分在該LESD封裝之平面圖中係可見的。
  5. 如請求項4之LESD封裝，其中整個該第一對齊基準標記在該LESD封裝之平面圖中係可見的。
  6. 如請求項1之撓性多層構造，其中該第一對齊基準標記在該第一導電墊中形成一第一溝槽，並且係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD的一第一導電端子之一第一側延伸，使得當該第一 導電端子使用自該第一導電端子朝向該第一溝槽流出之導電材料來電氣連接至該第一導電墊時，該第一溝槽係夠深且夠寬以使得流出之該第一導電端子的一顯著部分至少部分填充該第一溝槽。
  7. 一種用於安裝一發光半導體裝置(LESD)之撓性多層構造，其包含：一撓性介電基材，其包含相對之頂部和底部主表面及一在該頂部主表面上以用於受納一LESD之LESD安裝區；第一和第二導電墊，其等設置在該LESD安裝區中以用於電氣連接至一受納在該LESD安裝區中之LESD的對應第一和第二導電端子；及一或多個溝槽，其形成在該第一導電墊中且在該第一導電墊之一周緣的一內部內，該一或多個溝槽之各者係經調適以緊鄰並沿著一安裝在該LESD安裝區中之LESD的一第一導電端子之一側延伸，使得當該第一導電端子使用自該第一導電端子朝向該一或多個溝槽流出之導電材料來電氣連接至該第一導電墊時，該一或多個溝槽係夠深且夠寬以使得流出之該第一導電端子的一顯著部分至少部分填充該一或多個溝槽。
  8. 如請求項7之撓性多層構造，其使得當該第一導電端子係電氣連接至該第一導電墊時，在平面圖中，該複數個溝槽中之各溝槽的至少一部分係在該LESD之一外邊界外。
  9. 如請求項7之撓性多層構造，其中該一或多個溝槽中之各溝槽在一平面圖中係可見的。
  10. 一種形成一用於安裝一發光半導體裝置(LESD)之撓性多層構造之方法，該方法包含：提供一撓性介電基材，其具有相對之頂部和底部主表面； 在該撓性介電基材之該頂部主表面上界定一LESD安裝區以用於受納一LESD；在該LESD安裝區中形成對應於一第一對齊基準標記之一圖案；在該撓性介電基材之該頂部主表面上的該LESD安裝區中形成第一和第二導電墊以用於電氣連接至一受納在該LESD安裝區中之LESD的對應第一和第二導電端子，該第一導電墊接界該第一基準標記之一周緣；及移除該圖案而生成一形成在該第一導電墊之一周緣的一內部內之第一對齊基準標記。
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