TW201720908A - 用於一般照明與顯示器背光源之磷光體轉換白光發光裝置及光致發光化合物 - Google Patents
用於一般照明與顯示器背光源之磷光體轉換白光發光裝置及光致發光化合物 Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 223
- 150000001875 compounds Chemical class 0.000 title claims description 10
- 238000005424 photoluminescence Methods 0.000 title 1
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910003564 SiAlON Inorganic materials 0.000 claims description 8
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 8
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
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- KIFMEJBJYYXGPI-UHFFFAOYSA-M [O-]C(C(CC(O)=O)(CC(O)=O)O)=O.P.[K+] Chemical compound [O-]C(C(CC(O)=O)(CC(O)=O)O)=O.P.[K+] KIFMEJBJYYXGPI-UHFFFAOYSA-M 0.000 description 1
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- DQUIAMCJEJUUJC-UHFFFAOYSA-N dibismuth;dioxido(oxo)silane Chemical compound [Bi+3].[Bi+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DQUIAMCJEJUUJC-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Abstract
本發明係關於磷光體轉換白光發光裝置,其包含可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體(LED);可操作以產生峰發射波長在500 nm至550 nm範圍內之光之黃光至綠光發光磷光體;及紅光發光錳活化之氟化物磷光體,例如錳活化之六氟矽酸鉀磷光體(K2SiF6:Mn4+)。該等黃光至綠光及紅光發光磷光體以混合物形式納入且分散遍及折射率為1.40至1.43之透光材料。在一些實施例中,該透光材料包含基於二甲基之聚矽氧。該裝置可進一步包含可操作以產生峰發射波長為580 nm至620 nm之光之橙光至紅光發光磷光體。
Description
本揭示內容係關於磷光體轉換白光發光裝置及光致發光化合物。具體而言,但並非排他性地,本發明之實施例涉及白光發光裝置及用於一般照明之產生具有90及更高之高演色性指數(CRI)之白光之光致發光化合物。此外,本發明之實施例係關於白光發光裝置及用於高色域顯示器之背光源中之化合物。
最近,白光發光LED (「白光LED」)已變得愈來愈流行且愈來愈常用於替代習用螢光光源、緊湊型螢光光源及白熱光源。白光LED通常包括一或多種光致發光材料(通常無機磷光體材料),其吸收由LED所發射輻射之一部分且再發射不同色彩(波長)之光。磷光體材料可作為層提供於定位遠離LED之波長轉換組件上或納入其中。通常,LED產生藍光且磷光體吸收一定百分比之藍光且再發射黃光、綠光或綠光及黃光之組合。由LED產生之藍光之未由磷光體材料吸收之部分與由磷光體發射之光組合而提供對於眼呈白色的光。亦已發現白光LED在液晶顯示器背光源(例如電視、電腦顯示器、膝上型電腦、平板電腦裝置及智慧型手機)中之廣泛用途。 已知為產生具有較高CRI、例如80或更高之白光,在波長轉換組件中另外包括紅光及/或橙光發光磷光體。 本發明涉及關於具有經改良發光效能、演色性及/或色域之白光發光裝置及顯示器背光源之改良。
本發明之實施例涉及包括用於一般照明及顯示器背光源之波長轉換磷光體之白光發光裝置。 根據本發明之實施例,白光發光裝置包含:可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體;可由藍光激發且可操作以產生峰發射波長在500 nm至575 nm範圍內之光之黃光至綠光發光磷光體;折射率為約1.4 (即n≈1.39至≈1.43)之紅光發光錳活化之氟化物磷光體;及折射率為1.40至1.43之透光材料,其包含黃光至綠光發光磷光體及紅光發光錳活化之氟化物磷光體之混合物。通常,黃光至綠光發光及紅光發光錳活化之氟化物磷光體之混合物納入(分散於)透光材料中且遍及透光材料均勻分佈。 發現相較於使用具有較高折射率之其他透光材料之裝置,將黃光至綠光發光及紅光發光錳活化之氟化物磷光體納入折射率與紅光發光錳活化之氟化物磷光體之折射率相當之透光材料中導致由裝置發射之光通量實質增加(約5%增加)。假設光通量之增加係由透光材料之折射率(n≈1.4)增加具有約1.4之相當折射率之紅光發光錳活化之氟化物磷光體之紅光提取(及/或激發)引起。在一實施例中,紅光發光錳活化之氟化物磷光體包含紅光發光錳活化之六氟矽酸鉀磷光體,其組成可由化學式K2
SiF6
:Mn4+
代表。K2
SiF6
:Mn4+
具有約1.399之折射率。預期本發明可發現折射率為約1.4之其他紅光發光錳活化之氟化物磷光體之實用性且據信具有該等性質之錳活化之氟化物磷光體可包括K2
TiF6
:Mn4+
、K2
SnF6
:Mn4+
、Na2
TiF6
:Mn4+
、Na2
ZrF6
:Mn4+
、Cs2
SiF6
:Mn4+
、Cs2
TiF6
:Mn4+
、Rb2
SiF6
:Mn4+
、Rb2
TiF6
:Mn4+
、K3
ZrF7
:Mn4+
、K3
NbF7
:Mn4+
、K3
TaF7
:Mn4+
、K3
GdF6
:Mn4+
、K3
LaF6
:Mn4+
及K3
YF6
:Mn4+
。 在一些實施例中,透光材料包含基於甲基之聚矽氧,例如二甲基矽氧烷或聚二甲基矽氧烷。 黃光至綠光發光磷光體包含可由藍光激發且可操作以發射峰波長為500 nm至575 nm之光之任何磷光體。在意欲用於一般照明之一實施例中,黃光至綠光發光磷光體包含鈰活化之石榴石磷光體,例如鈰活化之鋁酸釔(YAG)磷光體或鈰活化之鋁酸鎦(LuAG)磷光體。YAG磷光體之實例可由化學式Y3-x
(Al1-y
Gay
)5
O12
:Cex
代表,其中0.01<x<0.2且0<y<2.5。LuAG磷光體之實例可由化學式Lu3-x
(Al1-y
My
)5
O12
:Cex
代表,其中M係Mg、Ca、Sr、Ba、Ga及其組合中之至少一者,0.01<x<0.2且0<y<1.5。在一實施例中,M=Ga且LuAG磷光體可由化學式Lu3-x
(Al1-y
Gay
)5
O12
:Cex
代表。YAG或LuAG磷光體可進一步包含諸如F、Cl或Br等鹵素。 在意欲用於一般照明之另一實施例中,綠光發光磷光體包含銪活化之矽酸鹽磷光體,其由化學式A2
SiO4
:Eu代表,其中A係Mg、Ca、Sr、Ba及其組合中之至少一者。銪活化之矽酸鹽磷光體可進一步包含諸如F、Cl或Br等鹵素。黃光至綠光發光磷光體包含鈰活化之石榴石磷光體。 對於顯示器背光源,黃光至綠光發光磷光體較佳包含峰發射波長與顯示器之綠色濾波器匹配、通常為535 nm之窄頻帶綠光發光磷光體。在此說明書中,窄頻帶發光磷光體係指其發射峰具有約50 nm或更小之FWHM (半高全寬)之磷光體。在實施例中,黃光至綠光發光磷光體包含FWHM為50-52 nm之銪活化之β-SiAlON磷光體。銪活化之β-SiAlON磷光體之實例係由化學式Mx
Si12-(m+n)
Alm+n
On
N16-n
:Eu代表,其中M係Mg、Ca、Sr及其組合中之至少一者,0.01<x<0.1,0.01<m<0.12且0.1<n<0.5。在另一實施例中,黃光至綠光發光磷光體包含由通式SrGa2
S4
:Eu代表之FWHM為46-48 nm之銪活化之硫化物磷光體。 對於一般照明,白光發光裝置可進一步包含可由藍光激發且可操作以發射峰發射波長在580 nm至620 nm範圍內之光的橙光至紅光發光磷光體。已發現包括第三橙光至紅光發光磷光體提供裝置之亮度之顯著增加(約8%)、一般CRI (Ra)之增加、CRI (R9)之增加及發光效能(LE)之增加。 透光材料包含黃光至綠光發光磷光體、紅光發光錳活化之氟化物磷光體及橙光至紅光發光磷光體之混合物。 在一些實施例中,橙光發光磷光體包含諸如CASN(1-1-1-3)或2-5-8氮化矽磷光體等銪活化之氮化矽磷光體,其具有M´2
Si5
N8
:Eu之一般結晶結構,其中M係Mg、Ca、Sr、Ba及Zn中之至少一者。 在實施例中,CASN磷光體可由化學式(Ca1-x
Srx
)AlSiN3
:Eu代表,其中0.5<x£1。在實施例中,2-5-8氮化矽磷光體可由化學式Ba2-x
Srx
Si5
N8
:Eu代表,其中0£x£2。較佳地,橙光發光磷光體產生峰發射波長在590 nm至610 nm範圍內之光。 本發明發現特定應用於高CRI裝置且該裝置有利地可操作以產生一般CRI (Ra)為90或更高之白光。在此專利說明書中,除非另外規定,否則CRI係指為CRI (R1)至CRI (R8)之平均值之一般CRI (Ra)。在實施例中,白光發光裝置可操作以產生相關色溫(CCT)介於2700K與3000K之間且一般CRI (Ra)為90或更高之白光。在一些實施例中,白光發光裝置另外可操作以產生CRI (R9)為90或更高之白光。 在一些實施例中,紅光發光錳活化之氟化物磷光體(例如六氟矽酸鉀磷光體)對黃光至綠光發光磷光體之重量比例係大於50%且更通常介於約70%與約90%或約85%之間。 根據本發明之另一實施例,白光發光裝置包含:可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體;可由藍光激發且可操作以發射峰發射波長在500 nm至575 nm範圍內之光之黃光至綠光發光磷光體;及可由藍光激發且可操作以發射峰發射波長介於約631nm與約632nm之間之光之紅光發光錳活化之六氟矽酸鉀磷光體(K2
SiF6
:Mn4+
);及可由藍光激發且可操作以產生峰發射波長在575 nm至620 nm範圍內之光之橙光至紅光發光磷光體,其中該裝置可操作以產生相關色溫介於2700K與3000K之間、平均演色性指數(Ra)為90或更高且演色性指數(R9)為90或更高之白光。 該白光發光裝置可進一步包含折射率為1.40至1.43之透光材料,其包含黃光至綠光發光磷光體、紅光發光錳活化之六氟矽酸鉀磷光體及橙光至紅光發光磷光體之混合物。 黃光至綠光發光磷光體包含鈰活化之綠光發光鋁酸鹽磷光體,例如鈰活化之鋁酸釔(YAG)磷光體;鈰活化之鋁酸鎦(LuAG)磷光體或矽酸鹽磷光體。 橙光至紅光發光磷光體包含發射峰發射波長在580 nm至620 nm範圍內之磷光體光之任何藍光可激發磷光體。在一些實施例中,橙光發光磷光體包含諸如CASN(1-1-1-3)或2-5-8氮化矽磷光體等銪活化之氮化矽磷光體,其具有M´2
Si5
N8
:Eu之一般結晶結構,其中M係Mg、Ca、Sr、Ba及Zn中之至少一者。 在實施例中,CASN磷光體可由化學式(Ca1-x
Srx
)AlSiN3
:Eu代表,其中0.5<x£1。在實施例中,2-5-8氮化矽磷光體可由化學式Ba2-x
Srx
Si5
N8
:Eu代表,其中0£x£2。較佳地,橙光發光磷光體產生峰發射波長在590 nm至610 nm範圍內之光。 根據本發明之另一實施例,白光發光裝置包含:可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體;可由藍光激發且可操作以發射峰發射波長在500 nm至550 nm範圍內之光且選自由以下組成之群之黃光至綠光發光磷光體:鈰活化之釔石榴石磷光體及鈰活化之鎦石榴石磷光體;可由藍光激發且可操作以發射峰發射波長介於631 nm與632 nm之間之光之紅光發光錳活化之六氟矽酸鉀磷光體(K2
SiF6
:Mn4+
);及可由藍光激發且可操作以產生峰發射波長在575 nm至620 nm範圍內之光之橙光至紅光發光銪活化之氮化矽磷光體。 在實施例中,白光發光裝置可操作以產生相關色溫介於2700K與3000K之間且CRI (Ra
)為90或更高之白光。在一些實施例中,白光發光裝置另外可操作以產生CRI (R9)為90或更高之白光。 根據又一實施例,白光發光裝置包含:可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體;可由藍光激發且可操作以發射峰發射波長在500 nm至550 nm範圍內之光之黃光至綠光發光鈰活化之鋁酸鎦磷光體;可由藍光激發且可操作以發射峰發射波長介於631 nm與632 nm之間之光之紅光發光錳活化之六氟矽酸鉀磷光體(K2
SiF6
:Mn4+
);及可由藍光激發且可操作以產生峰發射波長在590 nm至620nm範圍內之光之橙光至紅光發光銪活化之氮化矽磷光體,其由化學式Ba2-x
Srx
Si5
N8
:Eu代表,其中0£x£2,且其中該裝置可操作以產生相關色溫介於2700K與3000K之間且演色性指數(Ra)為90或更高之白光。 根據又一實施例,白光發光裝置包含:可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體;可由藍光激發且可操作以發射峰發射波長在500 nm至575 nm範圍內之光之黃光至綠光發光磷光體;可由藍光激發且可操作以發射峰發射波長介於631 nm與632 nm之間之光之紅光發光錳活化之六氟矽酸鉀磷光體(K2
SiF6
:Mn4+
);及可由藍光激發且可操作以產生峰發射波長在575 nm至600 nm範圍內之光之橙光至紅光發光磷光體,其中該裝置可操作以產生相關色溫介於約2700K與約3000K之間之白光,且其中在波長範圍460 nm至600 nm內,裝置所發射之光強度(正規化至CIE 1931 XYZ相對亮度Y=100)相較於相同相關色溫之黑體曲線之光強度(正規化至CIE 1931 XYZ相對亮度Y=100)之間之最大偏差小於0.3。 在波長範圍460 nm至500 nm內,裝置所發射之光強度(正規化至CIE 1931 XYZ相對亮度Y=100)相較於相同相關色溫之黑體曲線之光強度(正規化至CIE 1931 XYZ相對亮度Y=100)之間之最大偏差可係小於0.2。 此外,在波長範圍500 nm至570 nm內,裝置所發射之光強度(正規化至CIE 1931 XYZ相對亮度Y=100)相較於相同相關色溫之黑體曲線之光強度(正規化至CIE 1931 XYZ相對亮度Y=100)之間之最大偏差可係小於0.1。 較佳地,白光發光裝置可操作以產生一般CRI (Ra)為90或更高且CRI (R9)為90或更高之白光。 根據本發明之另一態樣,光致發光化合物包含:折射率為1.40至1.43之透光材料(封裝劑),其包含峰發射波長在500 nm至575 nm範圍內之黃光至綠光發光磷光體及折射率為約1.4之紅光發光錳活化之氟化物磷光體之混合物。通常,黃光至綠光發光及紅光發光錳活化之氟化物磷光體之混合物納入(分散於)透光材料中且遍及透光材料均勻分佈。 在一實施例中,紅光發光錳活化之氟化物磷光體包含紅光發光錳活化之六氟矽酸鉀磷光體,其組成可由化學式K2
SiF6
:Mn4+
代表。K2
SiF6
:Mn4+
具有約1.399之折射率。預期本發明可發現折射率為約1.4之其他紅光發光錳活化之氟化物磷光體之實用性且據信具有該等性質之錳活化之氟化物磷光體可包括K2
TiF6
:Mn4+
、K2
SnF6
:Mn4+
、Na2
TiF6
:Mn4+
、Na2
ZrF6
:Mn4+
、Cs2
SiF6
:Mn4+
、Cs2
TiF6
:Mn4+
、Rb2
SiF6
:Mn4+
、Rb2
TiF6
:Mn4+
、K3
ZrF7
:Mn4+
、K3
NbF7
:Mn4+
、K3
TaF7
:Mn4+
、K3
GdF6
:Mn4+
、K3
LaF6
:Mn4+
及K3
YF6
:Mn4+
。 在一些實施例中,透光材料包含基於甲基之聚矽氧,例如二甲基矽氧烷或聚二甲基矽氧烷。 黃光至綠光發光磷光體可包含可由藍光激發且可操作以發射峰波長為500 nm至575 nm之光之任何磷光體。對於一般照明應用,黃光至綠光發光磷光體包含鈰活化之石榴石磷光體。另一選擇為及/或另外,黃光至綠光發光磷光體可包含銪活化之矽酸鹽磷光體,其由化學式A2
SiO4
:Eu代表,其中A係Mg、Ca、Sr、Ba及其組合中之至少一者。對於顯示器背光源應用,黃光至綠光發光磷光體包含窄頻帶綠光發光磷光體、較佳銪活化之β-SiAlON磷光體或銪活化之硫化物磷光體,其由通式SrGa2
S4
:Eu代表。 對於一般照明應用,光致發光化合物可進一步包含峰發射波長在580 nm至620 nm範圍內之橙光至紅光發光磷光體,且其中透光材料包含黃光至綠光發光磷光體、紅光發光錳活化之氟化物磷光體及橙光至紅光發光磷光體之混合物。 橙光至紅光發光磷光體包含銪活化之基於氮化矽之磷光體。 當紅光發光錳活化之六氟矽酸鉀磷光體對黃光至綠光發光磷光體之重量比例大於50%且更通常介於70%與90%或約85%之間時,本發明發現特定實用性。 根據本發明之實施例,顯示器背光源包含:可操作以產生藍光之固態發光體;可由藍光激發且可操作以產生峰發射波長為約535 nm之光之窄頻帶綠光發光磷光體;紅光發光錳活化之六氟矽酸鉀磷光體;及折射率為1.40至1.43之透光材料,其包含窄頻帶綠光發光磷光體及紅光發光錳活化之六氟矽酸鉀磷光體之混合物。在實施例中,窄頻帶綠光發光磷光體可包含銪活化之β-SiAlON磷光體,其由化學式Mx
Si12-(m+n)
Alm+n
On
N16-n
:Eu代表,其中M係Mg、Ca、Sr及其組合中之至少一者,0.01 < x < 0.1,0.01 < m < 0.12且0.1 < n < 0.5。在另一實施例中,窄頻帶綠光發光磷光體可包含由通式SrGa2
S4
:Eu代表之銪活化之硫化物磷光體。 在本發明之各個實施例中,可提供磷光體或光致發光化合物之混合物作為LED封裝之一部分,通常於LED晶片上或遠離固態發光體。在遠端磷光體配置中,磷光體之混合物提供於定位遠離LED、通常由空氣間隙與LED分開之光學組件中。
相關申請案之交叉參考 本申請案主張於2015年9月10日提出申請之美國臨時申請案第62/216,985號及於2016年6月2日提出申請之美國臨時申請案第62/344,930號之優先權之權益,每一案件皆係以引用方式全部併入本文中。 圖1
係本發明之實施例之白光發光裝置10
之示意圖。裝置10
經構形以產生CCT (相關色溫)為約2700K且一般CRI (演色性指數) CRI (Ra)為90及更高之暖白光。 裝置10
包含一或多個容納於封裝14
內之藍光發光之基於GaN (氮化鎵)之LED晶片12
。一或多個LED晶片可操作以產生主波長在440 nm至470 nm、通常450 nm至455 nm範圍內之藍光。可(例如)包含表面可安裝裝置(SMD)之封裝(例如SMD 5630 LED封裝)包含上部及下部主體部件16
、18
。上部主體部件16
界定經構形以接受一或多個LED晶片12
之凹槽20
。該封裝進一步包含基底上電連接至凹槽20
底板上之相應電極接觸墊26
及28
之電連接器22
及24
。可使用黏合劑或焊料將LED晶片12
安裝至位於凹槽20
底板上之導熱墊30 。
導熱墊30
熱連接至該封裝基底上之導熱墊32
。使用接合線34
及36
將LED晶片之電極墊電連接至封裝底板上之相應電極接觸墊26
及28
且凹槽20
完全填充有透明聚矽氧38
,其裝載有黃光至綠光發光磷光體、橙光至紅光發光磷光體及紅光發光錳活化之氟化物磷光體之混合物,使得LED晶片12
之經暴露表面經磷光體/聚矽氧材料混合物覆蓋。為增強裝置之發射亮度,使凹槽20 之
壁傾斜且具有光反射表面。 紅光發光錳活化之氟化物磷光體包含可由化學式K2
SiF6
:Mn4+
代表之六氟矽酸鉀磷光體,其可由藍色激發光激發且可操作以產生峰發射波長λp
為約631 nm至約632 nm之紅光。此一磷光體之實例係來自Intematix Corporation, Fremont California, USA之峰發射波長為632 nm之NR6931 KSF磷光體。為了簡潔,將錳活化之六氟矽酸鉀磷光體及K2
SiF6
:Mn4+
磷光體稱為「KSF」。 黃光至綠光發光磷光體包含可由藍光激發且可操作以產生峰發射波長λp
在500 nm至575 nm範圍內之光之任何磷光體且可包括(例如)基於矽酸鹽之磷光體、基於石榴石之磷光體,例如YAG或LuAG磷光體。此等磷光體之實例於表1
中給出。
在一實施例中,黃光至綠光發光磷光體包含綠光發光之基於LuAG之磷光體,如標題為「Green-Emitting, Garnet-Based Phosphors in General and Backlighting Applications
」之美國專利US 8,529,791中所教示,其以引用方式全部併入本文中。此一綠光發光磷光體包含由鎦、鈰、至少一種鹼土金屬、鋁、氧及至少一種鹵素組成之鈰活化之綠光發光鋁酸鎦磷光體,其中該磷光體經構形以吸收波長在約380 nm至約480 nm範圍內之激發輻射且發射峰發射波長λp
在約500 nm至約550 nm範圍內之光。此一磷光體之實例係來自Intematix Corporation, Fremont California, USA之峰發射波長為540 nm之GAL540磷光體。 橙光至紅光發光磷光體包含可由藍光激發且可操作以發射峰發射波長λp
在580 nm至620 nm範圍內之光之任何磷光體且可包括(例如)銪活化之基於氮化矽之矽酸鹽磷光體或α-SiAlON磷光體。此等橙光至紅光發光磷光體之實例係於表2
中給出。在一實施例中,橙光發光磷光體包含紅光發光磷光體,如標題為「Red-Emitting Nitride-Based Calcium-Stabilized Phosphors
」之美國專利US 8,597,545中所教示,其以引用方式全部併入本文中。此一紅光發光磷光體包含由化學式Ma
Srb
Sic
Ald
Ne
Euf
代表之基於氮化物之組合物,其中:M係Ca且0.1 £ a £ 0.4;1.5 < b < 2.5;4.0 £ c £ 5.0;0.1 £ d £ 0.15;7.5 < e < 8.5;且0 < f < 0.1;其中a+b+f >2+d/v且v係M之化合價。或者,紅光發光磷光體包含紅光發光之基於氮化物之磷光體,如標題為「Red-Emitting Nitride-Based Phosphors
」之美國專利US 8,663,502中所教示,其以引用方式全部併入本文中。此一紅光發光磷光體包含由化學式M(x/v)
M´2
Si5-x
Alx
N8
:RE代表之基於氮化物之組合物,其中:M係至少一種具有化合價v之單價、二價或三價金屬;M´係Mg、Ca、Sr、Ba及Zn中之至少一者;且RE係Eu、Ce、Tb、Pr及Mn中之至少一者;其中x滿足0.1£x<0.4,且其中該紅光發光磷光體具有M´2
Si5
N8
:RE之一般結晶結構,Al取代該一般結晶結構內之Si,且M實質上位於該一般結晶結構內之間隙位點處。一種此一磷光體之實例係來自Intematix Corporation, Fremont California, USA之峰發射波長為600 nm之XR600紅光氮化物磷光體。
根據本發明之實施例,磷光體材料混合物納入其中之材料包含折射率為n=1.40至1.43之透光材料。舉例而言,透光材料包含基於二甲基之聚矽氧,例如聚二甲基矽氧烷(PDMS)。此一適宜聚矽氧材料之實例係來自Dow Corning之OE-6370 HF光學封裝劑。 圖2
係本發明之基於LED之白光發光裝置之光通量對CIE x之圖(■指定二甲基聚矽氧OE-6370HF)。CIE x中之變化係由聚矽氧內磷光體混合物之不同載量造成。為比較,顯示其中相同磷光體混合物納入基於苯基之聚矽氧內之相同裝置之數據(◆指定苯基聚矽氧)。用於該等裝置中之基於苯基之聚矽氧係來自Dow Corning之OE-6650光學封裝劑。基於苯基之聚矽氧封裝劑通常用於將磷光體封裝於LED裝置內。 圖2
顯示相較於使用基於苯基之聚矽氧作為磷光體封裝劑之相同裝置,藉由使用基於二甲基之聚矽氧作為磷光體封裝劑導致裝置之光通量增加約10%。據信光通量之增加由相較於基於苯基之聚矽氧之折射率(n≈1.54)之基於二甲基之聚矽氧之較低折射率(n≈1.4)造成。據信此較低折射率藉由減少磷光體粒子及周圍光學介質(聚矽氧)之界面處之全內反射來增加來自通常具有一定折射率(K2
SiF6
:Mn4+
- n=1.3991)之紅光發光錳活化之六氟矽酸鉀(KSF)磷光體之紅光提取。為比較,其他磷光體(包括黃光至綠光發光LuAG及橙光發光氮化物)之折射率通常係約1.8,此可促使基於苯基之聚矽氧封裝劑在基於LED之發光裝置中之廣泛用途。可能預期基於二甲基之聚矽氧之使用將對自除紅光發光錳活化之六氟矽酸鉀磷光體(KSF)外之磷光體之光發射具有有害效應且使裝置之總體性能降低。然而,如圖2
所示,當紅光發光錳活化之氟化物磷光體與其他磷光體組合使用時,淨結果為光通量之增加。發現當總磷光體中之多數(即大於50重量%)係紅光發光錳活化之氟化物磷光體時,光通量之增加更大。在其他實施例中,黃光至綠光發光、橙光至紅光發光(當存在時)及KSF磷光體可以混合物形式納入折射率為約1.40至約1.43之其他透光材料(例如透光環氧樹脂)中。裝置 1 : CCT 2700 K 及 CRI (Ra) ³ 90 之白光發光裝置
表3A
及3B
將經構形以產生標稱CCT為2700K且一般CRI (Ra)為90及更高之白光之指定為裝置1之白光發光裝置之詳情製表。
裝置1包含含有單一451 nm GaN LED晶片與以下兩種磷光體之混合物之SMD 5630 LED封裝:(i)黃光至綠光發光磷光體(Intematix之NYAG4454鈰活化之綠光發光YAG磷光體)及(ii)紅光發光錳活化之氟化物磷光體(Intematix NR6931 KSF)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。KSF磷光體佔總磷光體之重量比例係86.5 wt%,且其餘13.5 wt%係NYAG4454 (表3B
)。
表3C
將白光發光裝置(裝置1)之光學特徵製表。如自該表可見,該裝置產生CCT ≈2700K、一般CRI (Ra)為90及更大且CRI (R9)為大於90之白光。此外,如自表3C
可見,裝置1之發光效能(LE)為335 lm/W。 裝置 2 至 10 : CCT 2700 K 及 CRI (Ra) ³ 95 白光發光裝置
表4A
將指定為裝置2至10之各種白光發光裝置之詳情製表。裝置2至10標稱上為相同裝置且每一者經構形以產生標稱CCT為2700 K且一般CRI (Ra)為95及更大之白光。
每一裝置均包含含有單一451 nm GaN LED晶片與以下三種磷光體之混合物之SMD 5630 LED封裝:(i)黃光至綠光發光磷光體(Intematix之GAL540鈰活化之綠光發光LuAG磷光體)、(ii)紅光發光錳活化之氟化物磷光體(Intematix NR6931 KSF)及(iii)橙光至紅光發光磷光體(Intematix XR600基於氮化物之磷光體)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。紅色磷光體(XR600 + KSF)佔總磷光體之重量比例係85 wt%,且其餘15 wt%係GAL540 (表4A
)。KSF之比例係82 wt%且XR600之比例係3 wt%。 表4B
將白光發光裝置(裝置2至10)之光學特徵製表。如自該表可見,每一裝置均產生CCT≈2700 K、一般CRI (Ra)為95及更大且CRI (R9)為大於92之白光。此外,如自表4B
可見,該等裝置之發光效能(LE)在介於334 lm/W與339 lm/W之間之範圍內且平均LE為335 lm/W。 圖3
係表4B
之裝置中之一者之發射光譜。 裝置 11 、 12 及 13 : CCT 3000 K 、 CRI (Ra) ³ 95 且 CRI (R9) ³ 90 之白光發光裝置
表5A
及5B
將指定為裝置11 (參照)、12及13之各種白光發光裝置之詳情製表。每一裝置經構形以產生CCT為約3000 K之暖白光且包含含有單一451 nm GaN LED晶片之SMD 2835 LED封裝。
裝置11 (參照)包含兩種磷光體之混合物:(i)黃光至綠光發光磷光體(Intematix之GAL535鈰活化之綠光發光LuAG磷光體)及(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。KSF佔總磷光體之重量之比例係82% wt%,且其餘18 wt%係GAL 535 (表5B
)。
裝置12包含三種磷光體之混合物:(i)黃光至綠光發光磷光體(Intematix之GAL540鈰活化之綠光發光LuAG磷光體)、(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)及(iii)橙光至紅光發光磷光體(Intematix之XR600基於氮化物之磷光體)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。紅色磷光體(XR600 + KSF)佔總磷光體之重量比例係76.5 wt%,且其餘23.5 wt%係GAL540 (表5B
)。KSF之比例係73.5 wt%且XR600之比例係3 wt%。 裝置13包含三種磷光體之混合物:(i)黃光至綠光發光磷光體(Intematix之GAL540鈰活化之綠光發光LuAG磷光體)、(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)及(iii)橙光至紅光發光磷光體(Intematix之XR600基於氮化物之磷光體)。將磷光體之混合物納入基於苯基之聚矽氧(Dow Corning OE-6636光學封裝劑)中且遍及其均勻分佈。紅色磷光體(XR600 + KSF)佔總磷光體之重量比例係78 wt%,且其餘22 wt%係GAL540 (表5B
)。KSF之比例係75 wt%且XR600之比例係3 wt%。 表5C
將裝置11 (參照)、12、13之光學特徵製表,且圖4
、5
及6
分別顯示裝置11(參照)、12及13之發射光譜。 除黃光至綠光發光及KSF磷光體之外包括第三磷光體(即橙光至紅光發光磷光體)之益處藉由比較裝置11 (參照)及12之光學特徵(表5C
)而證明。可見包括第三橙光至紅光發光磷光體使得亮度增加≈9%、一般CRI (Ra)自≈69增加至≈95且CRI (R9)自≈7增加至≈93。總之,包括第三磷光體(即橙光至紅光發光磷光體)之益處可係亮度之增加、一般CRI (Ra)之增加及CRI (R9)之增加。
相較於將三種磷光體混合物封裝於苯基聚矽氧中,將三種磷光體混合物封裝於二甲基聚矽氧(更具體而言折射率n ≈ 1.40至1.43之透光材料)中之益處可藉由比較裝置12與裝置13之光學特徵(表5C
)來確定。可見二甲基聚矽氧之使用增加亮度≈ 2.5% (即自105.2%至108.7%)。如上文所述,據信二甲基聚矽氧之使用增加由KSF磷光體產生之光之光提取,此可導致發光效能(LE)之增加。同時,當使用二甲基聚矽氧時,總體磷光體使用可增加(裝置12,每100 g聚矽氧110 g,對裝置13,每100 g之聚矽氧83 g),亮度、一般CRI (Ra)及CRI (R9)之實質增加可能遠超過任何其他成本增加。裝置 14 ( 參照 ) 及 15 : CCT 2700 K 白光發光裝置
為進一步說明並解釋使用三種磷光體溶液及折射率為n=1.40至1.43之磷光體封裝劑之益處,現在討論兩個其他裝置裝置14 (參照)及裝置15。表6A
及6B
將白光發光裝置裝置14 (參照)及裝置15之詳情製表。每一裝置經構形以產生CCT為2700 K之暖白光且包含含有單一451 nm GaN LED晶片之SMD 5630 LED封裝。
裝置14 (參照)包含兩種磷光體之混合物:(i)黃光至綠光發光磷光體(Intematix之GAL535鈰活化之綠光發光LuAG磷光體)及(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)。將磷光體之混合物納入基於苯基之聚矽氧(Dow Corning OE-6336光學封裝劑)中且遍及其均勻分佈。KSF佔總磷光體之重量比例係82 wt%,且其餘18 wt%係GAL 535 (表6B
)。
裝置15包含三種磷光體之混合物:(i)黃光至綠光發光磷光體(Intematix之GAL540鈰活化之綠光發光LuAG磷光體)、(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)及(iii)橙光至紅光發光磷光體(Intematix之XR600基於氮化物之磷光體)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。紅色磷光體(XR600 + KSF)佔總磷光體之重量比例係76.5 wt%,且其餘23.5 wt%係GAL540 (表6B
)。KSF之比例係73.5 wt%且XR600之比例係3 wt%。 表6C
將裝置14 (參照)及15之光學特徵製表。可見包括第三橙光至紅光發光磷光體及使用二甲基聚矽氧封裝劑之組合效應使得亮度增加≈12%、一般CRI (Ra)自≈70增加至≈95、CRI (R9)自≈17增加至≈90且發光效能(LE)自≈311增加至≈333。
圖7
顯示(i)裝置14 (參照) (點線)、(ii)裝置15 (實線)及(iii) CCT為2700 K之黑體曲線(虛線)之正規化之強度對波長。為進行光譜之有意義的比較,每一光譜經正規化,使得每一者均具有CIE 1931 XYZ相對亮度Y=100。使用考慮觀察者之光適應反應之標準觀察者之CIE 1931發光度函數y
(λ)正規化數據。 普朗克曲線或黑體曲線(虛線,圖7
)代表一般CRI (Ra)等於100之光譜。因此,對於使得最高演色可能之白光發光裝置,其發射光譜應儘可能緊密地匹配黑體光譜。 參考圖7 ,
可見橙光至紅光發光磷光體之添加及折射率緊密匹配KSF磷光體之折射率之封裝劑之使用導致在三個方面更緊密匹配黑體光譜(虛線)之發射光譜(實線)。 首先,如藉由交叉陰影區域50
所指示,介於約500 nm與約540 nm之間之綠色峰減小,使得此區域中發射光譜(實線)更緊密遵循黑體曲線(虛線)。假設綠色峰之減小係由增加光散射且減小自黃光至綠光發光磷光體之光提取之二甲基聚矽氧造成。 第二,如藉由交叉陰影區域52
所指示,介於約550 nm與約610 nm之間之谷已藉由包括橙光至紅光發光磷光體而填充,使得此區域中之發射光譜(實線)更緊密遵循黑體曲線(虛線)。 第三,假設包括橙光至紅光發光磷光體及使用二甲基聚矽氧之組合效應減少KSF磷光體之總量,此減少KSF發射尖峰54
、56
、58
、60
(裝置14 (參照),每100 g之聚矽氧115 g KSF;裝置15,每100 g聚矽氧81 g KSF),使得此區域中之發射光譜(實線)更緊密遵循黑體曲線(虛線)。 圖8
係裝置14 (參照)及15之自黑體曲線(2700 K)正規化之強度偏差(針對CIE 1931 XYZ相對亮度Y=100正規化)對波長之圖。如自圖8
可見,在波長範圍460 nm至500 nm內,正規化至CIE 1931 XYZ相對亮度Y=100之裝置所發射光之強度相較於黑體曲線之光強度之間之最大偏差小於0.2。此外,可見在波長範圍500 nm至570 nm內,正規化至CIE 1931 XYZ相對亮度Y=100之裝置所發射光之強度相較於黑體曲線之光強度之間之最大偏差小於0.1。因此,可見在500 nm至570 nm之波長範圍內達成最佳效應,其中裝置15之發射光譜極緊密地遵循黑體曲線至幾乎理想情況。跨越460 nm至600 nm之總波長範圍,可見正規化至CIE 1931 XYZ相對亮度Y=100之由裝置所發射光之強度相較於黑體曲線之光強度之最大偏差小於0.3。顯示器背光源
儘管已關於一般用高CRI白光發光裝置闡述前述實施例,但本發明之實施例亦發現白光發光裝置用作顯示器背光源中之實用性。更具體而言,但並非排他性地,本發明實施例涉及用於高色域液晶顯示器(例如電視、電腦顯示器、膝上型電腦、平板電腦裝置及智慧型手機)中之顯示器背光源。在顯示器背光源中,黃光至綠光發光磷光體包含峰發射波長對應於顯示器之綠色濾波器元件之窄頻帶綠色磷光體。通常,在大多液晶顯示器中,峰發射波長係約535 nm (±2 nm)。在此說明書中,窄頻帶綠光發光磷光體係指發射峰之FWHM (半高全寬)為約50 nm或更小之磷光體。適宜窄頻帶磷光體之實例係於表7中給出。在背光源中,發射光譜與顯示器之彩色濾板匹配,且紅色、綠色及藍色組件與紅色、綠色及藍色濾波器匹配。因此,包括橙光至紅光發光磷光體並無益處。 裝置 16 及 17 :顯示器背光源
表8A
及8B
將指定為裝置16及17之各種白光發光裝置之詳情製表。每一裝置係經構形以用作顯示器背光源且包含含有單一452 nm GaN LED晶片之SMD 5630 LED封裝。
裝置16包含兩種磷光體之混合物:(i)黃光至綠光發光磷光體(峰發射波長λp
= 535 nm之窄頻帶綠光發光β-SiAlON:Eu磷光體)及(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。KSF佔總磷光體之重量比例係82 wt%,且其餘18 wt%係β-SiAlON:Eu (表8B
)。
裝置17包含兩種磷光體之混合物:(i)黃光至綠光發光磷光體(峰發射波長λp
= 536 nm之窄頻帶綠光發光硫化物磷光體:SrGa2
S4
:Eu)及(ii)紅光發光錳活化之氟化物磷光體(Intematix之NR6931 KSF)。將磷光體之混合物納入基於二甲基之聚矽氧(Dow Corning OE-6370 HF光學封裝劑)中且遍及其均勻分佈。KSF佔總磷光體之重量比例係82 wt%,且其餘18 wt%係SrGa2
S4
:Eu (表8B
)。 表8C
將裝置16及17之光學特徵製表且圖9
及10
分別顯示裝置16及17之發射光譜。如自表8C可見,裝置16及17分別產生具有NTSC (國家電視系統委員會(National Television System Committee))比色法1953 (CIE 1931)之色域%之光。
儘管已具體參照本發明之某些實施例來闡述本發明,但熟習此項技術者將易於明瞭,可在不背離本發明之精神及範圍之情形下對形式及細節進行改變及修改。舉例而言,儘管已關於錳活化之六氟矽酸鉀磷光體(KSF)闡述本發明之實施例,但預期本發明發現折射率為約1.4 (通常n≈1.39至≈1.43)之其他錳活化之氟化物磷光體之實用性。據信具有該等性質之此等錳活化之氟化物磷光體可包括K2
TiF6
:Mn4+
、K2
SnF6
:Mn4+
、Na2
TiF6
:Mn4+
、Na2
ZrF6
:Mn4+
、Cs2
SiF6
:Mn4+
、Cs2
TiF6
:Mn4+
、Rb2
SiF6
:Mn4+
、Rb2
TiF6
:Mn4+
、K3
ZrF7
:Mn4+
、K3
NbF7
:Mn4+
、K3
TaF7
:Mn4+
、K3
GdF6
:Mn4+
、K3
LaF6
:Mn4+
及K3
YF6
:Mn4+
。
為了更好地理解本發明,現在將參考附圖僅以實例的方式闡述本發明之基於LED之白光發光裝置及光致發光化合物,在附圖中相似參考編號用於表示相似部件,且其中: 圖1
係本發明實施例之基於LED之白光發光裝置之示意圖; 圖2
係基於LED之白光發光裝置之光通量對CIE x之圖,該等裝置中a)磷光體以混合物形式納入基於苯基之聚矽氧中且b)磷光體以混合物形式納入基於二甲基之聚矽氧中; 圖3
係本發明之實施例之基於LED之白光發光裝置之發射光譜; 圖4
係本發明之實施例之基於LED之白光發光裝置(裝置11)之發射光譜; 圖5
係本發明之實施例之基於LED之白光發光裝置(裝置12)之發射光譜; 圖6
係本發明之實施例之基於LED之白光發光裝置(裝置13)之發射光譜; 圖7
,對於(i)裝置14 (點線)、(ii)裝置15 (實線)及(iii) CCT為2700 K之普朗克軌跡(Plankian locus) (虛線),正規化之強度(正規化至CIE 1931 XYZ相對亮度Y=100)對波長; 圖8
,對於裝置14及15,來自黑體曲線(2700K)之正規化之強度偏差(針對CIE 1931 XYZ相對亮度Y=100正規化)對波長; 圖9
係本發明之實施例之基於LED之白光發光裝置顯示器背光源(裝置16)之發射光譜;且 圖10
係本發明之實施例之基於LED之白光發光裝置顯示器背光源(裝置17)之發射光譜。
10‧‧‧白光發光裝置;裝置
12‧‧‧LED晶片
14‧‧‧封裝
16‧‧‧上部主體部件
18‧‧‧下部主體部件
20‧‧‧凹槽
22‧‧‧電連接器
24‧‧‧電連接器
26‧‧‧電極接觸墊
28‧‧‧電極接觸墊
30‧‧‧導熱墊
32‧‧‧導熱墊
34‧‧‧接合線
36‧‧‧接合線
38‧‧‧透明聚矽氧
Claims (32)
- 一種白光發光裝置,其包含: 可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體; 可由藍光激發且可操作以產生峰發射波長在500 nm至575 nm範圍內之光之黃光至綠光發光磷光體; 紅光發光錳活化之複合氟化物磷光體;及 折射率為1.40至1.43之透光材料,其包含該黃光至綠光發光磷光體及紅光發光錳活化之氟化物磷光體之混合物。
- 如請求項1之白光發光裝置,其中該紅光發光錳活化之氟化物磷光體包含錳活化之六氟矽酸鉀磷光體。
- 如請求項1或請求項2之白光發光裝置,其中該透光材料包含基於甲基之聚矽氧。
- 如請求項1之白光發光裝置,其中該黃光至綠光發光磷光體包含鈰活化之石榴石磷光體。
- 如請求項4之白光發光裝置,其中該鈰活化之石榴石磷光體係由化學式Y3-x (Al1-y Gay )5 O12 :Cex 代表,其中0.01 < x < 0.2且0 < y < 2.5。
- 如請求項5之白光發光裝置,其中該鈰活化之石榴石磷光體進一步包含F、Cl及Br中之至少一者。
- 如請求項4之白光發光裝置,其中該鈰活化之石榴石磷光體係由化學式Lu3-x (Al1-y My )5 O12 :Cex 代表,其中M係Mg、Ca、Sr、Ba、Ga及其組合中之至少一者,0.01<x<0.2且0<y<1.5。
- 如請求項7之白光發光裝置,其中該鈰活化之石榴石磷光體進一步包含F、Cl及Br中之至少一者。
- 如請求項1之白光發光裝置,其中該黃光至綠光發光磷光體包含銪活化之β-SiAlON磷光體。
- 如請求項1之白光發光裝置,其中該黃光至綠光發光磷光體包含由通式SrGa2 S4 :Eu代表之銪活化之硫化物磷光體。
- 如請求項1之白光發光裝置,其進一步包含可由藍光激發且可操作以發射峰發射波長在580 nm至620 nm範圍內之光之橙光至紅光發光磷光體,且其中該透光材料包含該黃光至綠光發光磷光體、該紅光發光錳活化之氟化物磷光體及該橙光至紅光發光磷光體之混合物。
- 如請求項11之白光發光裝置,其中該橙光至紅光發光磷光體包含銪活化之基於氮化矽之磷光體。
- 如請求項12之白光發光裝置,其中該銪活化之氮化矽磷光體係由化學式(Ca1-x Srx )AlSiN3 :Eu代表,其中0.5<x£1。
- 如請求項12之白光發光裝置,其中該銪活化之氮化矽磷光體係由化學式Ba2-x Srx Si5 N8 :Eu代表,其中0£x£2。
- 如請求項1之白光發光裝置,其中該裝置可操作以產生相關色溫介於2700K與3000K之間、平均演色性指數(Ra)為90或更高且演色性指數(R9)為90或更高之白光。
- 如請求項1之白光發光裝置,其中紅光發光錳活化之氟化物磷光體對綠光發光磷光體之重量比例係大於50%。
- 如請求項1之白光發光裝置,其中該紅光發光錳活化之氟化物磷光體對黃光至綠光發光磷光體之重量%比例係介於約70 wt%與約90 wt%之間。
- 一種白光發光裝置,其包含: 可操作以產生主波長在440 nm至470 nm範圍內之藍光之固態發光體; 可由藍光激發且可操作以發射峰發射波長在500 nm至575 nm範圍內之光之黃光至綠光發光磷光體; 可由藍光激發且可操作以發射峰發射波長介於631nm與632nm之間之光之紅光發光錳活化之六氟矽酸鉀磷光體;及 可由藍光激發且可操作以產生峰發射波長在575 nm至600 nm範圍內之光之橙光至紅光發光磷光體, 其中該裝置可操作以產生相關色溫介於約2700K與約3000K之間之白光且其中在波長範圍460 nm至600 nm內,正規化至CIE 1931 XYZ相對亮度Y=100之該裝置所發射光之強度相較於正規化至CIE 1931 XYZ相對亮度Y=100之相同相關色溫之黑體曲線之光強度之間之最大偏差小於0.3。
- 如請求項18之白光發光裝置,其中在波長範圍460 nm至500 nm內,正規化至CIE 1931 XYZ相對亮度Y=100之該裝置所發射光之強度相較於正規化至CIE 1931 XYZ相對亮度Y=100之相同相關色溫之黑體曲線之光強度之間之最大偏差係小於0.2。
- 如請求項18或請求項19之白光發光裝置,其中在波長範圍500 nm至570 nm內,正規化至CIE 1931 XYZ相對亮度Y=100之該裝置所發射光之強度相較於正規化至CIE 1931 XYZ相對亮度Y=100之相同相關色溫之黑體曲線之光強度之間之最大偏差小於0.1。
- 如請求項18之白光發光裝置,其中該裝置可操作以產生平均演色性指數(Ra)為90或更高且演色性指數(R9)為90或更高之白光。
- 如請求項18之白光發光裝置,其進一步包含折射率為1.40至1.43之透光材料,該透光材料包含該黃光至綠光發光磷光體、該紅光發光錳活化之六氟矽酸鉀磷光體及該橙光至紅光發光磷光體之混合物。
- 如請求項18之白光發光裝置,其中該黃光至綠光發光磷光體包含鈰活化之釔石榴石磷光體。
- 如請求項18之白光發光裝置,其中該黃光至綠光發光磷光體包含鈰活化之鎦石榴石磷光體。
- 如請求項18之白光發光裝置,其中該橙光至紅光發光磷光體包含銪活化之基於氮化矽之磷光體。
- 一種光致發光化合物,其包含:折射率為1.40至1.43之透光材料,該透光材料包含峰發射波長在500 nm至575 nm範圍內之黃光至綠光發光磷光體及紅光發光錳活化之氟化物磷光體之混合物。
- 如請求項26之光致發光化合物,其中該紅光發光錳活化之氟化物磷光體包含六氟矽酸鉀磷光體。
- 如請求項26或請求項27之光致發光材料,其中該透光材料包含基於甲基之聚矽氧。
- 如請求項26之光致發光材料,其中該黃光至綠光發光磷光體包含鈰活化之石榴石磷光體。
- 如請求項26之光致發光材料,其進一步包含峰發射波長在580 nm至620 nm範圍內之橙光至紅光發光磷光體,且其中該透光材料包含該黃光至綠光發光磷光體、該紅光發光錳活化之六氟矽酸鉀磷光體及該橙光至紅光發光磷光體之混合物。
- 如請求項30之光致發光材料,其中該橙光至紅光發光磷光體包含銪活化之基於氮化矽之磷光體。
- 一種顯示器背光源,其包含: 可操作以產生藍光之固態發光體; 可由藍光激發且可操作以產生峰發射波長為約535 nm之光之窄頻帶綠光發光磷光體; 紅光發光錳活化之六氟矽酸鉀磷光體;及 折射率為1.40至1.43之透光材料,其包含該窄頻帶綠光發光磷光體及該紅光發光錳活化之六氟矽酸鉀磷光體之混合物。
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EP3489327A1 (en) | 2019-05-29 |
CN108352432A (zh) | 2018-07-31 |
KR20180067532A (ko) | 2018-06-20 |
EP3347924A4 (en) | 2019-04-10 |
WO2017044380A1 (en) | 2017-03-16 |
TWI616515B (zh) | 2018-03-01 |
CN108352432B (zh) | 2021-09-14 |
CN113725342A (zh) | 2021-11-30 |
EP3347924A1 (en) | 2018-07-18 |
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