JP4587330B2 - 低い色温度を有する光源 - Google Patents
低い色温度を有する光源 Download PDFInfo
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- JP4587330B2 JP4587330B2 JP2007524165A JP2007524165A JP4587330B2 JP 4587330 B2 JP4587330 B2 JP 4587330B2 JP 2007524165 A JP2007524165 A JP 2007524165A JP 2007524165 A JP2007524165 A JP 2007524165A JP 4587330 B2 JP4587330 B2 JP 4587330B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 52
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000011572 manganese Substances 0.000 claims description 9
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 7
- 238000004020 luminiscence type Methods 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- -1 nitride silicate Chemical class 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims 1
- 238000009877 rendering Methods 0.000 description 11
- 238000000295 emission spectrum Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000005266 casting Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000004767 nitrides Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 2
- 229910004709 CaSi Inorganic materials 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- VYZCLCPZAJLOBI-UHFFFAOYSA-N calcium magnesium chloro(trioxido)silane Chemical compound [Mg+2].[Ca+2].[O-][Si]([O-])([O-])Cl VYZCLCPZAJLOBI-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01—ELECTRIC ELEMENTS
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
Description
従来は、暖白色の色温度の領域、つまり3500Kを下回る領域を実現するのは、市販されているLEDでは困難であった。通常の蛍光体は5000Kを上回る色温度を生じる。それゆえ従来は、とりわけ暖白色である低い色温度を、複数のLEDの組合せにより調節する非常に煩雑な試行が行われてきた。たとえばWO 02/52901およびWO 02/52902を参照されたい。
本発明の課題は、請求項1の上位概念に記載された6000Kを下回る低い色温度に相応する暖白色または中性白色の光の色を有する、次のような光源とりわけLEDを提供することである。すなわち、Raができる限り高く、少なくともRa=87を達成し、とりわけRa=90を上回る光源とりわけを提供することである。別の課題は、可能な限り高い効率と高い安定性とを同時に達成することである。
次に、複数の実施例に基づいて本発明を詳しく説明する。
図1 本発明の基礎となるメカニズムを示す。
本発明の原理の具体例を図1に示した。蛍光体Ca8−xEuxMg(SiO4)4Cl2の放出が示されており、ここではx=0.2であり、Eu割合は、Caによって占有される格子位置のうち2.5mol%である。純粋な蛍光体の最大放出は、511nmに位置する。励起は460nmで行った。FWHMは76nmである。それと同時にこのLEDにおいて、(Ca1−bEub)2Si5N8のタイプのニトリドシリケートを使用し、ここではb=0.02である。このようなニトリドシリケートの放出は、600nmの領域に位置する。しかし、このことは図1では重要でない。むしろ、クロロシリケートのFWHMの領域で急峻な勾配を有するニトリドシリケートの吸収特性プロフィールが重要である。ここで重要なのは、FWHMの短波長側の曲線(λ1)と該FWHMの長波長側の曲線(λ2)との間の、それぞれクロロシリケートに基づく特性プロフィールである。ここでは吸収は、より長い波長に向かって急峻に増大する。この自己吸収によって、LED中のクロロシリケートの作用はより長い波長にシフトし、破線を参照すると、このクロロシリケートの作用の最大は約15nmシフトされている。図のように、短波長側の曲線でニトリドシリケートの吸収値が、長波長側の曲線における相応の値より係数2〜3だけ大きい場合、有利にはそれ以上に大きい場合、効率的なシフトが得られている。図1では、放出も吸収も任意単位で表されている。
Claims (17)
- 低い色温度を有する光源であって、
青色スペクトル領域で放出する1次放射源と、該1次放射源の前に接続された、2つの蛍光体の層とを有し、
該蛍光体は双方とも、1次放射を部分的に変換する形式のものにおいて、
第1の蛍光体は、緑色を放出するクロロシリケートの群に由来し、該第1の蛍光体には、ユーロピウムと場合によっては付加的にマンガンとがドープされており、ここでは実験式Ca8−x−yEuxMnyMg(SiO4)4Cl2が成り立ち、x≧0.005かつ0≦y≦1であり、
第2の蛍光体は、化学式(Ca1−aSra)2Si5N8:Euの橙赤色のニトリドシリケートであり、0≦a≦0.15であり、
前記成分は、最高6000Kの色温度が達成されるように混合されることを特徴とする、光源。 - 前記クロロシリケートでは、Euの割合は最大x=1.2(15mol%)である、請求項1記載の光源。
- 前記ニトリドシリケートではEuの割合は、(Ca1−a−bSraEub)2Si5N8の表現を使用して、b=0.005〜0.2の間であり、たとえば0.01≦b≦0.04である、請求項1記載の光源。
- 前記クロロシリケートに含まれるEuの一部、たとえば5〜30mol%がMnに置き換えられている、請求項2記載の光源。
- 少なくとも2000Kの色温度を有し、たとえば2700〜3500Kの色温度を有する、請求項1記載の光源。
- 前記クロロシリケートのピーク放出は、500〜520nmの領域にある、請求項1記載の光源。
- 該光源の放出のピーク波長は445〜475nmの領域にあり、たとえば450〜455nmの領域にある、請求項1記載の光源。
- 前記ニトリドシリケートの放出のピーク波長は590〜620nmの領域にあり、たとえば605〜615nmの領域にある、請求項1記載の光源。
- 少なくとも87のRaが達成され、たとえば90を上回るRaが達成される、請求項1記載の光源。
- 実験式Ca8−x−yEuxMnyMg(SiO4)4Cl2を有するクロロシリケートが使用され、ここでは、xはx=0.05〜x=1.9の間であり、yはy=0〜y=1.0の間であり、それぞれこれらの限界値も含める、請求項1記載の光源。
- 前記ニトリドシリケートは、前記クロロシリケートの放出のFWHMの領域で吸収を行い、該吸収によって該クロロシリケートの有効な放出のシフトが生じ、該シフトは、ピーク波長に関して5nmを上回る、請求項1記載の光源。
- 前記ニトリドシリケートの吸収特性は、前記クロロシリケートの放出のFWHMにおいて勾配を示し、
短波長側の曲線における有効な吸収値は、長波長側の曲線における相応の値より少なくとも2倍高く、有利には少なくとも3倍高い、請求項11記載の光源。 - 前記短波長側の曲線における吸収は、前記クロロシリケートの有効な放出の次のようなシフト、すなわちピーク波長に関して5〜20nmのシフトが生じるように高い、請求項12記載の光源。
- 化学式Ca2Si5N8:Euの橙赤色のニトリドシリケートが使用される、請求項1記載の光源。
- 前記ニトリドシリケート中のEuの割合は、陽イオン(Ca,Sr)で0.5〜15mol%であり、限界値も含める、請求項1記載の光源。
- 白色発光ルミネセンス変換LEDとして構成されている、請求項1記載の光源。
- インジウムベースの放電ランプとして構成されている、請求項1記載の光源。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004038199A DE102004038199A1 (de) | 2004-08-05 | 2004-08-05 | LED mit niedriger Farbtemperatur |
PCT/DE2005/001252 WO2006012833A2 (de) | 2004-08-05 | 2005-07-15 | Lichtquelle mit niedriger farbtemperatur |
Publications (2)
Publication Number | Publication Date |
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JP2008508734A JP2008508734A (ja) | 2008-03-21 |
JP4587330B2 true JP4587330B2 (ja) | 2010-11-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007524165A Expired - Fee Related JP4587330B2 (ja) | 2004-08-05 | 2005-07-15 | 低い色温度を有する光源 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8979318B2 (ja) |
EP (1) | EP1774600A2 (ja) |
JP (1) | JP4587330B2 (ja) |
KR (1) | KR101247232B1 (ja) |
CN (1) | CN1993838B (ja) |
DE (1) | DE102004038199A1 (ja) |
TW (1) | TWI389333B (ja) |
WO (1) | WO2006012833A2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US8282986B2 (en) | 2006-05-18 | 2012-10-09 | Osram Sylvania, Inc. | Method of applying phosphor coatings |
US20070267960A1 (en) * | 2006-05-18 | 2007-11-22 | Osram Sylvania Inc. | Phosphor Blend and Lamp Containing Same |
DE202008017146U1 (de) | 2007-04-26 | 2009-06-10 | Hamer, Eilert, Prof. Dr. | Vorrichtung zur Emission von Licht |
JP5360857B2 (ja) * | 2007-05-17 | 2013-12-04 | Necライティング株式会社 | 緑色発光蛍光体、その製造方法及びそれを用いた発光素子 |
DE102007037875A1 (de) | 2007-08-10 | 2009-02-12 | Osram Gesellschaft mit beschränkter Haftung | Strahlungsemittierende Vorrichtung |
JP5544881B2 (ja) * | 2007-11-30 | 2014-07-09 | 日亜化学工業株式会社 | 蛍光体及びこれを用いた発光装置並びに蛍光体の製造方法 |
DE102008029191A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung zur Hinterleuchtung eines Displays sowie ein Display mit einer solchen Beleuchtungseinrichtung |
DE102008021666A1 (de) * | 2008-04-30 | 2009-11-05 | Ledon Lighting Jennersdorf Gmbh | Lichtemittierende Vorrichtung und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung |
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-
2004
- 2004-08-05 DE DE102004038199A patent/DE102004038199A1/de not_active Withdrawn
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2005
- 2005-07-15 US US11/659,604 patent/US8979318B2/en not_active Expired - Fee Related
- 2005-07-15 CN CN200580026365.0A patent/CN1993838B/zh not_active Expired - Fee Related
- 2005-07-15 EP EP05782756A patent/EP1774600A2/de not_active Withdrawn
- 2005-07-15 WO PCT/DE2005/001252 patent/WO2006012833A2/de active Application Filing
- 2005-07-15 JP JP2007524165A patent/JP4587330B2/ja not_active Expired - Fee Related
- 2005-07-15 KR KR1020067026276A patent/KR101247232B1/ko active IP Right Grant
- 2005-08-03 TW TW094126329A patent/TWI389333B/zh not_active IP Right Cessation
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US20070247829A1 (en) | 2007-10-25 |
CN1993838A (zh) | 2007-07-04 |
KR101247232B1 (ko) | 2013-03-25 |
US8979318B2 (en) | 2015-03-17 |
CN1993838B (zh) | 2014-04-23 |
EP1774600A2 (de) | 2007-04-18 |
DE102004038199A1 (de) | 2006-03-16 |
WO2006012833A2 (de) | 2006-02-09 |
KR20070042924A (ko) | 2007-04-24 |
TWI389333B (zh) | 2013-03-11 |
JP2008508734A (ja) | 2008-03-21 |
TW200612584A (en) | 2006-04-16 |
WO2006012833A3 (de) | 2006-06-01 |
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