TW201717298A - 轉置微元件的方法 - Google Patents
轉置微元件的方法 Download PDFInfo
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- TW201717298A TW201717298A TW104136599A TW104136599A TW201717298A TW 201717298 A TW201717298 A TW 201717298A TW 104136599 A TW104136599 A TW 104136599A TW 104136599 A TW104136599 A TW 104136599A TW 201717298 A TW201717298 A TW 201717298A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000017105 transposition Effects 0.000 claims description 120
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 239000000284 extract Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910001338 liquidmetal Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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Abstract
一種轉置微元件的方法,包括下列步驟。提供承載單元,承載單元包括承載基板、多個電極與覆蓋電極的介電層。提供包括第一、二微元件的多個微元件。每一微元件與一個電極對應設置。施加電壓至與第一微元件對應的電極,以使承載單元對第一微元件的靜電吸引力F1大於承載單元對第二微元件的靜電吸引力F2。令彈性轉置頭的平坦轉置面與第一、二微元件接觸。在彈性轉置頭與第一、二微元件接觸且F1>F2的情況下,移動彈性轉置頭,以使彈性轉置頭提取第二微元件而將第一微元件留在承載單元上。利用彈性轉置頭將第二微元件置於接收單元上。
Description
本發明是有關於一種轉置方法,且特別是有關於一種轉置微元件的方法。
轉置微元件技術已使用在新興的電子裝置製程中。以光學觸控感測面板為例,在其製程中,先將多個微發光二極體從生長基板上轉置到觸控基板;然後,再於載有微發光二極體的觸控基板上製作多個感光結構,進而完成超薄的光學觸控感測面板。
一般而言,為提高生長基板的使用效率,微發光二極體會以較密的方式排列在生長基板上。微發光二極體在生長基板上的排列密度往往超過微發光二極體在光學觸控感測面板中的排列密度。因此,在習知技術中,需提供具有多個凸起部的彈性轉置頭,所述多個凸起部的排列方式與微發光二極體在觸控基板上的指定排列方式相同。然後,再利用彈性轉置頭的多個凸起部黏附生長基板上的部份微發光二極體,以從生長基板的發光二極體陣列中提取所需的微發光二極體,而留下不需的微發光二極體。然而,在多個凸起部黏附發光二極體陣列的部份微發光二極體時,彈性轉置頭的多個凸起部需與欲提取的多個微發光二極體對位,方可從微發光二極體陣列中提取正確的微發光二極體。此對位的動作費工費時,而使轉置微元件的速度不易提升。
本發明提供一種轉置微元件的方法,其轉置速度快。
本發明的轉置微元件的方法包括下列步驟:提供承載單元,承載單元包括承載基板、配置於承載基板上的多個電極以及覆蓋所述多個電極的介電層;提供多個微元件,所述多個微元件配置於承載單元的介電層上,其中每一個微元件與一個電極對應設置,且所述多個微元件包括第一微元件以及第二微元件;施加電壓至與第一微元件對應的一個電極,以使承載單元對第一微元件的靜電吸引力F1大於承載單元對第二微元件的靜電吸引力F2;提供具有平坦轉置面的彈性轉置頭;令彈性轉置頭的平坦轉置面與第一微元件以及第二微元件接觸,其中當平坦轉置面與第一微元件以及第二微元件接觸時,平坦轉置面的面積超過微元件的分佈範圍;在彈性轉置頭與第一微元件以及第二微元件接觸且F1>F2的情況下,移動彈性轉置頭,以使彈性轉置頭提取第二微元件而將第一微元件留在承載單元上;以及利用彈性轉置頭將第二微元件置於接收單元上。
在本發明的一實施例中,在彈性轉置頭與第一微元件以及第二微元件接觸且F1>F2的情況下,移動彈性轉置頭,以使彈性轉置頭提取第二微元件而將第一微元件留在承載單元上的步驟為:在彈性轉置頭與第一微元件以及第二微元件接觸且F1>F2的情況下,令彈性轉置頭朝著遠離承載單元的方向移動,以使彈性轉置頭對第一微元件及第二微元件施加作用力F3,其中F2<F3<F1,且靜電吸引力F1的方向以及靜電吸引力F2的方向與作用力F3的方向相反。
在本發明的一實施例中,上述的接收單元包括接收基底以及配置於接收基板上的接收層,而利用彈性轉置頭將第二微元件置於接收單元上的步驟包括:令彈性轉置頭將第二微元件攜帶至接收層上,以接合第二微元件與接收層;以及在第二微元件與接收層接合後,令彈性轉置頭朝著遠離接收單元的方向移動,以使彈性轉置頭與第二微元件分離。
在本發明的一實施例中,上述的第二微元件與接收層之間的接合力為F4。彈性轉置頭朝著遠離接收單元的方向移動時,彈性轉置頭對第二微元件施加作用力F5。F4>F5,且接合力F4的方向與作用力F5的方向相反。
在本發明的一實施例中,上述的接收層為光阻層,而接合第二微元件與接收層的步驟包括:在光阻層未固化前,令第二微元件與光阻層接觸;以及在第二微元件與光阻層接觸的情況下,固化光阻層。
在本發明的一實施例中,上述的接收層為第一金屬層,第二微元件具有第二金屬層,而接合第二微元件與接收層的步驟包括:加熱接收單元,以使接收單元的第一金屬層呈液態;令第二微元件的第二金屬層與液態的第一金屬層接觸;以及在第二微元件的第二金屬層與液態之第一金屬層接觸的情況下,降低第一金屬層的溫度,以使第一金屬層與第二金屬層形成合金。
在本發明的一實施例中,上述的彈性轉置頭的材料為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)。
在本發明的一實施例中,上述的微元件為微發光二極體。
基於上述,在本發明一實施例的轉置微元件方法中,透過『施加電壓至與第一微元件對應的電極,以使承載單元對第一微元件的靜電吸引力F1大於承載單元對第二微元件的靜電吸引力F2』的技術手段,彈性轉置頭的平坦轉置面可同時接觸所有微元件,進而提取所需的第二微元件,且不誤取不需的第一微元件。換言之,不需像習知技術般,令彈性轉置頭之多個凸起部與欲取的多個微元件對位,方可提取正確的微元件。因此,本發明一實施例之轉置微元件的方法可減少至少一次的對位步驟,從而提高轉置微元件的速度。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1為本發明一實施例之轉置微元件方法的流程圖。請參照圖1,轉置微元件的方法,包括下列步驟:提供承載單元,承載單元包括承載基板、配置於承載基板上的多個電極以及覆蓋所述多個電極的介電層(步驟S100);提供多個微元件,所述多個微元件配置於承載單元的介電層上,其中每一個微元件與一個電極對應設置,且所述多個微元件包括第一微元件以及第二微元件(步驟S200);施加電壓至與第一微元件對應的一個電極,以使承載單元對第一微元件的靜電吸引力F1大於承載單元對第二微元件的靜電吸引力F2(步驟S300);提供彈性轉置頭,彈性轉置頭具有平坦轉置面(步驟S400);令彈性轉置頭的平坦轉置面與第一微元件以及第二微元件接觸,其中當平坦轉置面與第一微元件以及第二微元件接觸時,平坦轉置面的面積超過所述多個微元件的分佈範圍(步驟S500);在彈性轉置頭與第一微元件以及第二微元件接觸且F1>F2的情況下,移動彈性轉置頭,以使彈性轉置頭提取第二微元件而將第一微元件留在承載單元上(步驟S600);以及利用彈性轉置頭將第二微元件置於接收單元上(步驟S700)。
值得注意的是,上述步驟S100~S700的順序並不以依序進行S100、S200、S300、S400、S500、S600、S700為限。步驟S100~S700的順序也可以做適當的更動。舉例而言,可依序進行步驟S100、S200、S400、S300、S500、S600、S700;可依序進行步驟S100、S200、S400、S500、S300、S600、S700;可依序進行步驟S400、S100、S200、S300、S500、S600、S700;或者,可依序進行步驟S400、S100、S200、S500、S300、S600、S700。以下將搭配圖2A至圖2G,具體說明本發明一實施例之轉置微元件的方法。
圖2A至圖2G為本發明一實施例之轉置微元件方法的剖面示意圖。請參照圖2A,在本實施例中,可先提供承載單元100。承載單元100包括承載基板110、配置於承載基板110上的多個電極120A、120B以及覆蓋多個電極120A、120B的介電層130。在本實施例中,承載基板110例如是藍寶石基板(Sapphire base)或矽基板(Silicon base),但本發明不以此為限,在其他實施例中,承載基板110也可以是其他種類的基板。多個電極120A、120B彼此隔開。電極120A、120B的材質可為金屬、合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、金屬材料與其它導電材料的堆疊層或其他適當種類的導體。介電層130的材質可為無機材料(例如:氧化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層)、有機材料或上述組合。
請參照圖2A,接著,提供多個微元件200A、200B,並使所述多個微元件200A、200B配置於承載單元110的介電層130上。每一個微元件200A(或200B)與一個電極120A(或120B)對應設置。在本實施例中,每一個微元件200A(或200B)可位於對應的一個電極120A(或120B)的正上方,但本發明不以此為限,在其他實施例中,微元件200A(或200B)也可略微偏離對應的電極120A(或120B)。所述多個微元件200A、200B包括第一微元件200A與第二微元件200B。第一微元件200A是指不欲提取的微元件,而第二微元件200B是指欲提取的微元件。
圖3為本發明一實施例的微元件的放大示意圖。請參照圖3,微元件200A、200B具有電極210。在本實施例中,微元件200A、200B例如為微發光二極體(micro-LED)。圖3之微元件200A、200B的二電極210位於同一表面上。換言之,本實施例的微元件200A、200B是水平式發光二極體。但本發明不限於此,在其他實施例中,微元件200A、200B也可以是其他適當型式的發光二極體。此外,本發明的微元件也不限於微發光二極體,在其他實施例中,微元件也可是其他類型的電子元件,例如:微晶片等。
請參照圖2A,接著,提供彈性轉置頭(transfer stamp)300。彈性轉置頭300具有平坦轉置面300a。整個平坦轉置面300a實質上位於同一平面上。在本實施例中,彈性轉置頭300可為聚二甲基矽氧烷轉置頭(poly dimethyl siloxane stamp;PDMS stamp)。然而,本發明不限於此,在其他實施例中,彈性轉置頭300的材料也可採用其他楊氏模量(Young's modulus)低的彈性體(Elastomer)。
請參照圖2B,接著,令彈性轉置頭300的平坦轉置面300a與第一微元件200A及第二微元件200B接觸。圖4為圖2B之承載單元100、配置於承載單元100上的所有微元件200A、200B以及彈性轉置頭300之平坦轉置面300a的上視示意圖。請參照圖2B及圖4,當平坦轉置面300a與第一微元件200A以及第二微元件200B接觸時,平坦轉置面300a的面積R1超過多個微元件200A、200B的分佈範圍R2。換言之,平坦轉置面300a為單一且連續的平面,當平坦轉置面300a與第一微元件200A以及第二微元件200B接觸時,平坦轉置面300a可同時與承載單元100上的所有的微元件200A、200B接觸。
請參照圖2C,接著,施加電壓V至與第一微元件200A對應的電極120A,以使承載單元100對第一微元件200A的靜電吸引力F1大於承載單元100對第二微元件200B的靜電吸引力F2。在本實施例中,在施加電壓V至與第一微元件200A對應的電極120A時,可以選擇性地不施加電壓至與第二微元件200B對應的電極120B。此時,電極120A正上方的部份介電層130會被極化,而電極120B正上方的另一部份的介電層130則不易被極化。當電極120A上方的部份介電層130被極化時,所述部份介電層130的表面會產生極化電荷,而極化電荷會對第一微元件200A的電極210(繪示於圖3)產生靜電吸引力F1。同時間,電極120B正上方的部份介電層130的表面則不易有極化電荷,而不易吸引第二微元件200B的電極210。更進一步地說,在本實施例中,電極120B正上方的部份介電層130對第二微元件200B的靜電吸引力F2可趨近於零。
雖然,上段以趨近於零的F2為例說明,但本發明並不限定承載單元100對第二微元件200B的靜電吸引力F2一定要是零。換言之,本發明並不限定不能施加電壓至與第二微元件200B對應的電極120B,在其他實施例中,也可選擇性地同時施加電壓至電極120A、120B,惟施加至電極120B的電壓需小於施加至電極120A的電壓,以使承載單元100對第二微元件200B的靜電吸引力F2小於承載單元100對第一微元件200A的靜電吸引力F1。
請參照圖2C及2D,接著,在彈性轉置頭300與第一微元件200A及第二微元件200B接觸且F1>F2的情況下,移動彈性轉置頭300,以使彈性轉置頭300提取(pick-up)第二微元件200B而將第一微元件200A留在承載單元100上。詳言之,如圖2C所示,在彈性轉置頭300的平坦轉置面300a與第一微元件200A及第二微元件200B接觸之後,彈性轉置頭300開始朝著遠離承載單元100的方向y移動。此時,彈性轉置頭300的平坦轉置面300a會對第一微元件200A及第二微元件200B施加相同的作用力F3。作用力F3的方向與靜電吸引力F1、F2的方向相反。當F2<F3時,彈性轉置頭300可提取第二微元件200B;另一方面,當F3<F1時,彈性轉置頭300則無法提取第一微元件200A,而使第一微元件200A留在承載單元100上。在本實施例中,可透過將彈性轉置頭300的移動速度設定在適當範圍,以使彈性轉置頭300對微元件200A、200B施加的作用力F3介於承載單元100對第二微元件200B的靜電吸引力F2與承載單元100對第一微元件200A的靜電吸引力F1之間,進而使彈性轉置頭300提取第二微元件200B而不提取第一微元件200A。
值得一提的是,如圖2C及圖2D所示,透過『施加電壓V至與第一微元件200A對應的電極120A,以使承載單元100對第一微元件200A的靜電吸引力F1大於承載單元100對第二微元件200B的靜電吸引力F2』的技術手段,彈性轉置頭300的平坦轉置面300a可同時接觸所有微元件200A、200B,進而提取所需的微元件200B。換言之,不需像習知技術般,令彈性轉置頭之多個凸起部與欲取的多個微元件對位,也就是一個凸起部需要對應一個微元件的方式,方可提取所需的微元件。因此,本實施例之轉置微元件的方法至少可減少一次對位步驟,從而提高轉置微元件的速度。
請參照圖2E至圖2G,在彈性轉置頭300提取所需的第二微元件200B後,接著,可利用彈性轉置頭300將第二微元件200B置於接收單元400上。接收單元400包括接收基底410以及配置於接收基板410上的接收層420。詳言之,如圖2E及圖2F所示,在本實施例中,可先令彈性轉置頭300將第二微元件200B攜帶至接收單元400的接收層420上,以接合第二微元件200B與接收單元400的接收層420。第二微元件200B與接收層420之間的接合力為F4。請參照圖2F及圖2G,接著,在第二微元件200B與接收單元400的接收層420接合後,令彈性轉置頭300朝著遠離接收單元400的方向y’移動,此時,彈性轉置頭300會對第二微元件200B施加作用力F5,其中F4>F5,且接合力F4的方向與作用力F5的方向相反。由於F4>F5,因此彈性轉置頭300會與第二微元件200B分離,而將第二微元件200B留在接收單元400上。
在本實施例中,接收單元400的接收基底410例如為玻璃基板,而接收單元400的接收層420例如為光阻層。如圖2F所示,在光阻層(即接收層420)未固化前,可先令第二微元件200B與光阻層(即接收層420)接觸。然後,在第二微元件200B與光阻層(即接收層420)接觸的情況下,固化光阻層(即接收層420),以接合第二微元件200B與接收單元400。如圖2F及圖2G所示,接著,在光阻層(即接收層420)固化後,令彈性轉置頭300朝著遠離接收單元400的方向y’移動,以將第二微元件200B留在接收單元400上。需說明的是,雖然,上述是以玻璃基板及光阻層分別做為接收基底410及接收層420所示例,但本發明並不限制接收基底410必須為玻璃基板及/或接收層420必須為光阻層,接收基底410及/或接收層420的材料選用可視實際產品及其製程需求選用其他適當材料。以下將搭配圖5A至圖5G舉例說明之。
圖5A至圖5G為本發明另一實施例之轉置微元件方法的剖面示意圖。圖5A至圖5G的轉置微元件方法與圖2A至圖2G的轉置微元件方法相似,因此相同或相對應的元件以相同或相對應的標號表示。圖5A至圖5G之轉置微元件方法與圖2A至圖2G之轉置微元件方法的主要差異在於:二者轉置的微元件200A、200B、200A’、200B’不儘相同;此外,二者之微元件200A、200B、200A’、200B’與對應接收層420、420’的接合方式也不儘相同,以下主要就此差異處做說明,二者相同之處,還請依照圖5A至圖5G中的標號參照前述說明,於此便不再重述。
請參照圖5A,首先,提供承載單元100。承載單元100包括承載基板110、配置於承載基板110上的多個電極120A、120B以及覆蓋多個電極120A、120B的介電層130。接著,提供多個微元件200A’、200B’,並使所述多個微元件200A’、200B’配置於承載單元110的介電層130上。每一個微元件200A’(或200B’)與一個電極120A(或120B)對應設置。每一微元件200A’、200B’具有金屬層220。所述多個微元件200A’、200B’包括第一微元件200A’以及第二微元件200B’,其中第一微元件200A’是指不欲提取的微元件,而第二微元件200B’是指欲提取的微元件。
圖6為圖5B之承載單元100、配置於承載單元100上的所有微元件200A’、200B’以及彈性轉置頭300之平坦轉置面300a的上視示意圖。請參照圖5B及圖6,接著,提供具有平坦轉置面300a的彈性轉置頭300。然後,令彈性轉置頭300的平坦轉置面300a與第一微元件200A’以及第二微元件200B’接觸,其中當平坦轉置面300a與第一微元件200A’以及第二微元件200B’接觸時,平坦轉置面300a的面積R1超過多個微元件200A’、200B’的分佈範圍R2。請參照圖5C,接著,施加電壓V至與第一微元件200A’對應的電極120A,以使承載單元100對第一微元件200A’的靜電吸引力F1大於承載單元100對第二微元件200B’的靜電吸引力F2。請參照圖5D,接著,在彈性轉置頭300與第一微元件200A’以及第二微元件200B’接觸且F1>F2的情況下,移動彈性轉置頭300,以使彈性轉置頭300提取第二微元件200B’而將第一微元件200A’留在承載單元100上。
請參照圖5E至圖5G,接著,可利用彈性轉置頭300將第二微元件200B’置於接收單元400上。接收單元400包括接收基底410以及配置於接收基板410上的接收層420’。與圖2A至圖2G之實施例不同的是,在圖5A至圖5G的實施例中,接收層420’為金屬層。詳言之,如圖5E所示,在本實施例中,可先加熱接收單元400,以使接收單元400的接收層420’呈液態。請參照圖5F,然後,再令第二微元件200B’的金屬層220與液態的接收層420’接觸;之後,在於第二微元件200B’的金屬層220與液態之接收層420’接觸的情況下,降低接收層420’的溫度,以使接收層420’與第二微元件200B’的金屬層220形成合金,進而使第二微元件200B’固定在接收單元400上。如圖5G所示,接著,再令彈性轉置頭300朝著遠離接收單元400的方向y’移動,而將第二微元件200B’留在接收單元400上,於此便完成了轉置微元件的動作。
綜上所述,在本發明一實施例的轉置微元件方法中,施加電壓至與不欲取之微元件對應的電極上,可使承載單元對不欲取之微元件的靜電吸引力大於承載單元對欲取之微元件的靜電吸引力。此時,彈性轉置頭的平坦轉置面可在同時接觸欲取的微元件與不欲取的微元件之後朝遠離承載單元的方向移動,進而提取所需的微元件,而不會提取不需的微元件。換言之,不需像習知技術般,令彈性轉置頭之多個凸起部與欲取的多個微元件對位,方可提取正確的微元件。因此,本發明一實施例之轉置微元件的方法至少可減少一次對位步驟,從而提高轉置微元件的速度。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧承載單元
110‧‧‧承載基板
120A、120B‧‧‧電極
130‧‧‧介電層
200A、200B、200A’、200B’‧‧‧微元件
210‧‧‧電極
220‧‧‧金屬層
300‧‧‧彈性轉置頭
300a‧‧‧平坦轉置面
400‧‧‧接收單元
410‧‧‧接收基底
420、420’‧‧‧接收層
C‧‧‧曲線
F1、F2‧‧‧靜電吸引力
F3、Fr、F5‧‧‧作用力
R1‧‧‧面積
R2‧‧‧分佈範圍
S100~S700‧‧‧步驟
y、y’‧‧‧方向
110‧‧‧承載基板
120A、120B‧‧‧電極
130‧‧‧介電層
200A、200B、200A’、200B’‧‧‧微元件
210‧‧‧電極
220‧‧‧金屬層
300‧‧‧彈性轉置頭
300a‧‧‧平坦轉置面
400‧‧‧接收單元
410‧‧‧接收基底
420、420’‧‧‧接收層
C‧‧‧曲線
F1、F2‧‧‧靜電吸引力
F3、Fr、F5‧‧‧作用力
R1‧‧‧面積
R2‧‧‧分佈範圍
S100~S700‧‧‧步驟
y、y’‧‧‧方向
圖1為本發明一實施例之轉置微元件方法的流程圖。 圖2A至圖2G為本發明一實施例之轉置微元件方法的剖面示意圖。 圖3為本發明一實施例的微元件的放大示意圖。 圖4為圖2B之承載單元100、配置於承載單元100上的所有微元件200A、200B以及彈性轉置頭300之平坦轉置面300a的上視示意圖。 圖5A至圖5G為本發明另一實施例之轉置微元件方法的剖面示意圖。 圖6為圖5B之承載單元100、配置於承載單元100上的所有微元件200A’、200B’以及彈性轉置頭300之平坦轉置面300a的上視示意圖。
S100~S700‧‧‧步驟
Claims (8)
- 一種轉置微元件的方法,包括: 提供一承載單元,該承載單元包括一承載基板、配置於該承載基板上的多個電極以及覆蓋該些電極的一介電層; 提供多個微元件,該些微元件配置於該承載單元的該介電層上,其中每一個微元件與一個電極對應設置,且該些微元件包括一第一微元件以及一第二微元件; 施加一電壓至與該第一微元件對應的一個電極,以使該承載單元對該第一微元件的靜電吸引力F1大於該承載單元對該第二微元件的靜電吸引力F2; 提供一彈性轉置頭,該彈性轉置頭具有一平坦轉置面; 令該彈性轉置頭的該平坦轉置面與該第一微元件以及該第二微元件接觸,其中當該平坦轉置面與該第一微元件以及該第二微元件接觸時,該平坦轉置面的面積超過該些微元件的分佈範圍; 在該彈性轉置頭與該第一微元件以及該第二微元件接觸且F1>F2的情況下,移動該彈性轉置頭,以使該彈性轉置頭提取該第二微元件而將該第一微元件留在該承載單元上;以及 利用該彈性轉置頭將該第二微元件置於一接收單元上。
- 如申請專利範圍第1項所述的轉置微元件的方法,其中在該彈性轉置頭與該第一微元件以及該第二微元件接觸且F1>F2的情況下,移動該彈性轉置頭,以使該彈性轉置頭提取該第二微元件而將該第一微元件留在該承載單元上的步驟為: 在該彈性轉置頭與該第一微元件以及該第二微元件接觸且F1>F2的情況下,令該彈性轉置頭朝著遠離該承載單元的方向移動,以使該彈性轉置頭對該第一微元件及該第二微元件施加一作用力F3,其中F2<F3<F1,且該靜電吸引力F1的方向以及該靜電吸引力F2的方向與該作用力F3的方向相反。
- 如申請專利範圍第1項所述的轉置微元件的方法,其中該接收單元包括一接收基底以及配置於該接收基板上的一接收層,而利用該彈性轉置頭將該第二微元件置於該接收單元上的步驟包括: 令該彈性轉置頭將該第二微元件攜帶至該接收層上,以接合該第二微元件與該接收層;以及 在該第二微元件與該接收層接合後,令該彈性轉置頭朝著遠離該接收單元的方向移動,以使該彈性轉置頭與該第二微元件分離。
- 如申請專利範圍第3項所述的轉置微元件的方法,其中該第二微元件與該接收層之間的接合力為F4,該彈性轉置頭朝著遠離該接收單元的方向移動時,該彈性轉置頭對該第二微元件施加一作用力F5,其中F4>F5,且該接合力F4的方向與該作用力F5的方向相反。
- 如申請專利範圍第3項所述的轉置微元件的方法,其中該接收層為一光阻層,而接合該第二微元件與該接收層的步驟包括: 在該光阻層未固化前,令該第二微元件與該光阻層接觸;以及 在該第二微元件與該光阻層接觸的情況下,固化該光阻層。
- 如申請專利範圍第3項所述的轉置微元件的方法,其中該接收層為一第一金屬層,該第二微元件具有一第二金屬層,而接合該第二微元件與該接收層的步驟包括: 加熱該接收單元,以使該接收單元的該第一金屬層呈液態; 令該第二微元件的該第二金屬層與液態的該第一金屬層接觸;以及 在該第二微元件的該第二金屬層與液態之該第一金屬層接觸的情況下,降低該第一金屬層的溫度,以使該第一金屬層與該第二金屬層形成一合金。
- 如申請專利範圍第1項所述的轉置微元件的方法,其中該彈性轉置頭的材料為聚二甲基矽氧烷。
- 如申請專利範圍第1項所述的轉置微元件的方法,其中該些微元件為多個微發光二極體。
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