TW201714228A - 晶片封裝體及其形成方法 - Google Patents

晶片封裝體及其形成方法 Download PDF

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TW201714228A
TW201714228A TW104143521A TW104143521A TW201714228A TW 201714228 A TW201714228 A TW 201714228A TW 104143521 A TW104143521 A TW 104143521A TW 104143521 A TW104143521 A TW 104143521A TW 201714228 A TW201714228 A TW 201714228A
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layer
chip package
conductive features
semiconductor die
conductive feature
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TW104143521A
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TWI593029B (zh
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洪瑞斌
黃震麟
劉獻文
鄭心圃
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台灣積體電路製造股份有限公司
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Abstract

本揭露係關於一些晶片封裝體及其形成方法。在一實施例中，晶片封裝體包括一半導體晶粒，以及一封裝層部分或完全包覆半導體晶粒。晶片封裝體也包括貫穿該封裝層的一導電特徵。晶片封裝體更包括一介面層，其中介面層連續地包圍導電特徵。介面層位於導電特徵與封裝層之間，且介面層包括一金屬氧化物材料。

Description

晶片封裝體及其形成方法
本發明係有關於一種晶片封裝體及其形成方法，特別有關於一種具有導電特徵的晶片封裝體及其形成方法。
半導體裝置可應用於各種的電子產品，例如電腦、手機、數位相機、以及其他的電子設備。半導體裝置的製造一般通常係藉由於一半導體基底上連續沉積絕緣或介電層、導電層、以及半導體層之材料，以及藉由微影與蝕刻製程圖案化上述各種材料層以在半導體基底上形成電子元件以及單元。
半導體工業藉由持續微縮最小特徵尺寸(其可有更多元件整合於一給定面積中)，持續改善各種電子元件(例如，電晶體、二極體、電阻器、電容器等)的集積密度。在一些應用中，較小的電子元件也使用較小的封裝體，其利用較小的面積或高度。
新的封裝技術已開始發展，例如堆疊式封裝(package on package，PoP)，係將具有一裝置晶粒的一頂封裝體接合於具有另一裝置晶粒的一底封裝體。經由採取這些新的封裝技術，可將具有不同或相似功能的各種封裝體整合在一起。然而，這些半導體裝置的新形態之封裝技術在製造上仍面臨許多挑戰。
本揭露包括一種晶片封裝體，包括：一半導體晶粒；一封裝層，至少部分包覆半導體晶粒；一導電特徵，位於封裝層中；以及一介面層，位於導電特徵與封裝層之間，其中介面層包括一金屬氧化物材料。
本揭露亦包括另一種晶片封裝體，包括：一半導體晶粒；一封裝層，其至少部分包覆半導體晶粒；一導電特徵，貫穿封裝層；以及一介面層，連續地圍繞導電特徵，其中介面層位於導電特徵與封裝層之間，且介面層包括一金屬氧化物材料。
本揭露亦包括一種晶片封裝體之形成方法，包括：形成一導電特徵於一載體基底上；設置一半導體晶粒於載體基底上；形成一封裝層於載體基底上並至少部分包覆半導體晶粒以及導電特徵；以及於形成封裝層之前，加熱導電特徵。
100‧‧‧載體基底
102‧‧‧黏著層
104‧‧‧基層
106‧‧‧晶種層
106a‧‧‧晶種部件
108‧‧‧遮罩層
110、138‧‧‧開口
112、112’‧‧‧導電特徵
113‧‧‧介面層
114‧‧‧半導體晶粒
116‧‧‧半導體基底
118‧‧‧鈍化層
120‧‧‧保護層
122‧‧‧導電墊
124、134、142‧‧‧連接器
128‧‧‧封裝層
130‧‧‧重分佈層
132‧‧‧鈍化層
136‧‧‧載體
140‧‧‧元件
402、404‧‧‧介面
A‧‧‧區域
G‧‧‧間隙
R1、R2‧‧‧高度變異
W‧‧‧寬度
第1A-1N圖根據一些實施例，繪示形成一晶片封裝體的各個製程步驟的剖面示意圖。
第2圖根據一些實施例，繪示位於一晶片封裝體中的一導電特徵的上視示意圖。
第3A-3C圖根據一些實施例，繪示形成一半導體裝置結構的各個製程步驟的剖面示意圖。
第4圖根據一些實施例，繪示位於一晶片封裝體中的一部分的剖面示意圖。
第5圖根據一些實施例，繪示位於一晶片封裝體中的一部 分的剖面示意圖。
本說明書的揭露內容提供許多不同的實施例或範例，以實施本發明的不同特徵部件。而本說明書以下的揭露內容是敘述各個構件及其排列方式的特定範例，以求簡化發明的說明。當然，這些特定的範例並非用以限定本發明。例如，若是本說明書以下的揭露內容敘述了將一第一特徵部件形成於一第二特徵部件之上或上方，即表示其包含了所形成的上述第一特徵部件與上述第二特徵部件是直接接觸的實施例，亦包含了尚可將附加的特徵形成於上述第一特徵部件與上述第二特徵部件之間，而使上述第一特徵部件與上述第二特徵部件可能未直接接觸的實施例。再者，本發明的說明中不同範例可能使用重複的參考符號及/或用字。這些重複符號或用字係為了簡化與清晰的目的，並非用以限定各個實施例及/或所述外觀結構之間的關係。
另外，在空間上的相關用語，例如“之下”、“以下”、“下方”、“之上”、“上方”等等係用以容易表達出本說明書中的部件或特徵部件與其他部件或特徵部件的關係。這些空間上的相關用語除了涵蓋了圖式所繪示的方位外，還涵蓋裝置於使用或操作中的不同方位。裝置可具有不同方位(旋轉90度或其他方位)，則在此使用的空間相關詞也可依此相同解釋。
以下敘述本發明一些實施例。第1A-1N圖根據一些實施例，係形成一晶片封裝體的各個製程步驟的剖面示意圖。 在第1A-1N圖所述的階段之前、同時及/或之後，可提供額外的製程。在不同的實施例中，所述的一些階段可被取代或是移除。一些額外的特徵可被加入半導體裝置結構。在不同的實施例中，如下所述的一些特徵可被取代或移除。雖然以下討論的實施例實施的特定順序的動作，這些動作也可以其他符合邏輯的順序實施。
如第1A圖所示，根據一些實施例，依序沉積或層疊一黏著層102以及一基層104於一載體基底100上。在一些實施例中，載體基底100用來作為一暫時支撐基底。載體基底100可包含半導體材料、陶瓷材料、高分子材料、金屬材料、其他合適的材料，或上述之組合。在一些實施中，載體基底100係一半導體基底，例如一矽晶圓。
黏著層102可包含黏膠(glue)，或是一疊層材料(lamination material)，例如一箔片(foil)。在一些實施例中，黏著層102為光敏感(photosensitive)的且在光照下可容易從載體基底100脫附。舉例來說，照射紫外光(ultra-violet(UV)light)或雷射光於載體基底100上可將黏著層102脫附。在一些實施例中，黏著層102為光熱轉換(light-to-heat conversion(LTHC))塗層。在一些其他實施例中，黏著層102為熱敏感的(heat-sensitive)。
在一些實施例中，基層104係一高分子層或一含高分子層。基層104可為一聚-對-伸苯基苯并雙唑(poly-p-phenylenebenzobisthiazole，PBO)、一聚醯亞胺(polyimide，PI)層、一阻焊(solder resist，SR)層、一 ABF(Ajinomoto buildup film)膜、一晶粒黏膠薄膜(die attach film，DAF)、其他合適的層膜，或上述之組合。
接著，根據一些實施例，沉積一晶種層106於基層104上，如第1B圖所示。在一些實施例中，晶種層106包含銅。在一些實施例中，晶種層106的沉積可使用物理氣相沉積(physical vapor deposition，PVD)製程、化學氣相沉積(chemical vapor deposition，CVD)製程、其他可應用的製程，或上述之組合。然而，本發明的實施例並不限於此。也可使用其他導電薄膜作為晶種層106。舉例來說，晶種層106可包含鈦(Ti)、鈦合金、銅(Cu)、銅合金，或上述之組合。鈦合金或銅合金可包含銀、鉻、鎳、錫、金、鎢、其他合適的元素，或上述之組合。
如第1C圖所示，根據一些實施例，形成一遮罩層108於晶種層106上。遮罩層108可具有一或多個開口110以暴露出一部份的晶種層106。遮罩層108的開口110定義設計要形成的導電特徵(例如，貫穿封裝通孔(through package vias))之位置。在一些實施例中，遮罩層108包含一光阻材料。遮罩層108的開口110係藉由一光微影(photolithography)製程形成。光微影製程可包括曝光(exposure)以及顯影(development)製程。
接著，根據一些實施例，形成導電特徵112、移除遮罩層108、圖案化晶種層106以形成晶種部件106a，如第1D圖所示。在一些實施例中，一導電材料沉積於晶種層106露出的部份上並且完全或部份地填滿開口110。導電材料包含銅。之後，移除遮罩層108，而沉積的導電材料形成數個導電特徵112(或導電柱體)，如第1D圖所示。在其後蝕刻晶種層時，可 將導電特徵112作為一遮罩部件。因此，晶種層被圖案化而形成晶種部件106a。
如第1E圖所示，根據一些實施例，將半導體晶粒114貼附於基層104上。在一些實施例中，半導體晶粒114的背側面對基層104，而半導體晶粒114的前側朝向上方。每個半導體晶粒可包含一半導體基底116、一鈍化層118、導電墊122、一保護層120以及連接器124於半導體晶粒114的前側上。可形成各種裝置部件於半導體基底116中或上。裝置部件可包含主動裝置及/或被動裝置。一黏著層，例如一晶粒黏膠薄膜(DAF)(未繪示)，可設置於半導體晶粒114與基層104之間。
如第1F圖所示，根據一些實施例，加熱導電特徵112以形成導電特徵112’。在一些實施例中，上述加熱製程誘發導電特徵112中晶粒的晶粒成長，造成導電特徵112’的形成。在一些實施例中，導電特徵112的平均晶粒尺寸介於約220μm與約240μm之間。在一些實施例中，導電特徵112’的平均晶粒尺寸增加至介於約270μm與約290μm之間。在一些實施例中，導電特徵112’的平均晶粒尺寸增加至介於約250μm與約320μm之間。
在一些實施例中，於介於約200℃至約250℃的溫度下實施加熱製程。在一些其他實施例中，於介於約200℃至約400℃的溫度下實施加熱製程。製程時間可介於約30分鐘至約2小時。在一些實施例中，將如第1F圖所示的結構放置於充滿氮氣或其他惰性氣體以及低濃度(例如約20至100ppm)氧氣的容器中。加熱製程可包含使用加熱爐、燈具、雷射、其他合適的 熱源，或上述之組合來加熱導電特徵。
在一些實施例中，導電特徵112’的電阻率低於導電特徵112。可能是因為加熱製程造成的晶粒成長降低了晶粒邊界的數目。在一些實施例中，導電特徵112’的表面形態不同於導電特徵112的表面形態。表面形態的不同可能是由晶粒成長所致。舉例來說，導電特徵112’的側壁可因為加熱製程後的晶粒成長而呈現起伏狀。導電特徵112’的表面形態在其後會更加詳細討論。
在一些實施例中，在加熱製程中，介面層113形成以圍繞導電特徵112’，如第1F圖所示。在一些實施例中，介面層113包含金屬氧化物材料。由於加熱製程中的氧化反應而形成介面層113。
在一些實施例中，導電特徵112’包含一金屬材料，且介面層113也包含與導電特徵112’相同之金屬材料。在一些實施例中，導電特徵112’包含銅，且介面層113包含氧化銅。
在一些實施例中，每個介面層113與其對應的導電特徵112’直接接觸。在一些實施例中，每個介面層113具有介於約50Å與約300Å之間的厚度。在一些實施例中，介面層113具有介於約100Å與約200Å之間的厚度。
在一些實施例中，每個介面層113連續地圍繞其對應的導電特徵112’。第2圖根據一些實施例，繪示一晶片封裝體中的一導電特徵的上視圖。導電特徵112’被介面層113連續地圍繞。雖然如第2圖所示的導電特徵112’具有一圓形上視圖，然而本發明的實施例並不限於此。導電特徵112’的上視的形狀 可包含類圓形狀、橢圓形、正方形、矩形，或其他合適的形狀。
如第1G圖所示，一封裝層128形成於基層104、導電特徵112’以及半導體晶粒114上，根據一些實施例。在一些實施例中，封裝層128包含一高分子材料。在一些實施例，封裝層128包含一成型化合物(molding compound)。在一些實施例中，封裝層128包覆半導體晶粒114，包含覆蓋半導體晶粒114的上表面以及側壁。在一些其他的實施例中，封裝層128部份包覆半導體晶粒114。舉例來說，半導體晶粒114的上部自封裝層128的上表面突出。在一些實施例中，封裝層128與介面層113直接接觸。在一些實施例中，介面層113將導電特徵112’與封裝層128分開，如第1G圖所示。
在一些實施例中，一液體成型化合物材料塗敷於基層104、導電特徵112’以及半導體晶粒114上，並包覆導電特徵112’以及半導體晶粒114。在一些實施例中，接著實施一熱製程(thermal process)硬化成型化合物材料並將其轉化成封裝層128。在一些實施例中，於介於約200℃至約230℃的溫度下實施熱製程。熱製程的實施時間可介於約1小時至約3小時。
在形成封裝層128前加熱導電特徵112’以誘發晶粒成長。由於導電特徵112’的晶粒尺寸在經過之前的加熱製程後已經增加，在後續形成封裝層128的熱製程可不誘發導電特徵112’更進一步的晶粒成長。即使導電特徵112’的晶粒成長發生，導電特徵112’的更進一步晶粒成長也受到限制。因此導電特徵112’的表面形態可大體上維持與熱製程之前的導電特徵112’的表面形態。在導電特徵112’與封裝層128之間並沒有高應力被 誘發。因此，可確保導電特徵112’與封裝層128之間的貼附。
在一些其他情形，導電特徵並未被加熱以避免在形成封裝層之前誘發晶粒成長。形成封裝層的熱製程可誘發導電特徵的晶粒成長，其結果可能會改變導電特徵的表面形態，其會對導電特徵與封裝層的貼附上造成負面影響。因此降低了晶片封裝體的可靠度以及性能。
根據本發明一些實施例，在形成封裝層128前加熱導電特徵112’。如此一來，由於減少或避免了導電特徵112’的表面形態改變，大體上不會有應力或應變形成於封裝層128以及圍繞導電特徵112’的介面層113中。因此，改善了封裝層128以及圍繞導電特徵112’的介面層113之間的介面品質。也因此改善了晶片封裝體的可靠度以及性能。
如第1H圖所示，根據一些實施例，薄化封裝層128以暴露出半導體晶粒114的連接器124以及導電特徵112’。可使用一平坦化製程以薄化封裝層128。平坦化製程可包含研磨(grinding)製程、化學研磨製程(chemical rmechanical polishing，CMP)、蝕刻製程、其他合適的製程，或上述之組合。在一些實施例，在平坦化製程中，移除位於導電特徵112’頂端上的部份的介面層113，如第1H圖所示。在一些實施例中，在平坦化製程中，移除導電特徵112’上部份。在一些實施例中，導電特徵112’的頂端與半導體晶粒114的連接器124的頂端大體上共平面。
之後，根據一些實施例，如第1I圖所示，一重分佈結構形成於如第1H圖所示的結構上，重分佈結構包含一重分佈 層130以及一鈍化層132。重分佈層130可包含彼此不電性連接的多個部份。重分佈層形成多個電性連接，連接至導電特徵112’以及連接器124。舉例來說，重分佈層130的一部份經由連接器124的其中之一電性連接至導電墊122。重分佈層130的一部份將連接器124電性連接至導電特徵112’的其中之一。重分佈層130的一部份電性連接至導電特徵112’的其中之一。可根據需求調整重分佈層130的圖案。舉例來說，如果使用一不同的電路佈局建立導電特徵112’與導電墊122之間的連接，重分佈層130的圖案可相應地改變。導電特徵112可用來作為貫穿封裝通孔(through package vias，TPVs)。在一些實施例中，貫穿封裝通孔圍繞半導體晶粒114。
在一些實施例中，重分佈層130包含金屬材料。金屬材料可包含銅、鋁、鎢、鎳、鈦、金、鉑、其他合適的材料，或上述之組合。在一些實施例中，鈍化層132包含一或多個層膜。鈍化層132可具有數個開口(未繪示)，暴露出部分地重分佈層130。接合墊(未繪示)可形成於露出的重分佈層上。鈍化層132包含介電材料且在可對後續的接合製程時造成的接合應力提供應力釋放。在一些實施例中，鈍化層132包含一高分子材料，例如聚醯亞胺(polyimide)、聚苯噁唑(polybenzoxazole，PBO)、與其相似之材料，或上述之組合。或者或更甚者，鈍化層132可包含苯並環丁烯(benzocyclobutene，BCB)。在一些實施例中，鈍化層132包含氧化矽、氮氧化矽、氮化矽、氮化矽、其他合適之材料，或上述之組合。
可使用多重沉積、塗佈及/或蝕刻製程形成重分佈 結構，其包含重分佈層130與鈍化層132。在一些實施例中，於形成重分佈結構時可實施一或多個熱製程。舉例來說，部分的鈍化層132可包含高分子材料，其使用包含熱製程的一製程而形成。如上所述，由於導電特徵112’已被加熱以誘發晶粒成長，因此導電特徵112’可在形成重分佈層後大體上維持其表面形態。由於降低或避免了導電特徵112’的表面形態改變，封裝層128與圍繞導電特徵112’的介面層113之間大體上沒有形成應力或應變，封裝層128與圍繞導電特徵112’的介面層113之間的介面品質可被維持。因此，可提升晶片封裝體的可靠度以及性能。
如第1J圖所示，連接器134可形成於鈍化層132上，根據一些實施例。連接器134可經由鈍化層132的開口(未繪示)被安裝至(或接合至)重分佈結構的接合墊上(未繪示)。一些連接器134可經由重分佈層130電性連接至半導體晶粒114。一些連接器134可藉由重分佈層134以及導電特徵112’的其中之一電性連接至其他元件。連接器134可包含焊料凸塊(solder bumps)。一凸塊底層金屬(under bump metallurgy，UBM)層(未繪示)可形成於連接器134下。
根據一些實施例，連接器134形成後，如第1J圖所示的結構翻轉並貼附至一載體136，且移除載體基底100，如第1K圖所示。載體136包含光敏感或熱敏感的一膠帶且可容易自連接器134脫附。在一些實施例中，載體基底100與黏著層102皆被移除。可提供合適的光源以移除黏著層102，也移除載體基底100。
如第1L圖所示，移除一部分的基層104以形成開口138，其暴露出導電特徵112，根據一些實施例。在這些情況，也移除晶種部件106a。在一些其他的實施例中，並未移除或並未完全移除晶種部件106a。在這些情況，開口138暴露出晶種部件106a。在一些實施例中，實施一雷射鑽孔(laser drilling)製程以形成開口138。也可使用其他可應用的製程，例如一蝕刻製程形成開口138。
在一些實施例中，實施一切割(dicing)製程將如第1L圖所示之結構分離成多個晶片封裝體。在一些其他實施例中，在切割製程前，可將多個元件疊置或接合至如第1L圖所示之結構上。
根據一些實施例，如第1M圖所示，疊置一或多個元件140於如第1L圖所示之結構上。在一些實施例中，每一個元件140包含另一個封裝體結構，其包含一或多個半導體晶粒。在一些實施例中，每一個元件140包含一半導體晶粒。
在一些實施例中，如第1M圖所示，可使用一或多個連接器142以實現元件140與導電特徵112’之間的接合。每一個連接器142可包含一焊料凸塊、一金屬柱體、其他合適的連接器，或上述之組合。在一些實施例中，每一個連接器142與對應的導電特徵112’以及對應的介面層113直接接觸。
在一些實施例中，連接器142為焊料凸塊，且連接器的形成包含用於迴焊(reflowing)焊料材料之熱製程。如上所述，由於導電特徵112’已被加熱以誘發晶粒成長，在形成連接器142後可大體上維持其表面形態。由於降低或避免了導電特 徵112’的表面形態改變，封裝層128與圍繞導電特徵112’的介面層113之間大體上沒有形成應力或應變，封裝層128與圍繞導電特徵112’的介面層113之間的介面品質可被維持。因此，可提升晶片封裝體的可靠度以及性能。
如第1N圖所示，根據一些實施例，實施一切割(dicing)製程將如第1M圖所示之結構分離成各自分離的數個晶片封裝體。如第1N圖所示，其繪示其中一個晶片封裝體。在一些實施例中，移除載體136。
在本發明的一些實施例中可有許多變化及/或修改。舉例來說，雖然如第1A-1N圖所示的實施例提供具有“扇出(fan-out)”特徵之一晶片封裝體，然而本發明的實施例並不限於此。本發明一些其他實施例中，包含具有“扇入(fan-out)”特徵之一晶片封裝體。
在本發明的一些實施例中可有許多變化及/或修改。舉例來說，雖然在半導體晶粒設置於載體基底上後加熱導電特徵，然而本發明的實施例並不限於此。本發明一些其他實施例中，在半導體晶粒設置於載體基底上前加熱導電特徵。
第3A-3C圖根據一些實施例，繪示形成一晶片封裝體的一製程的不同階段的剖面示意圖。如第3A圖所示，提供如相似於第1D圖所示的結構。其後，根據一些實施例，如第3B圖所示，加熱導電特徵112以形成導電特徵112’。如上所述，加熱製程可導致導電特徵112’的晶粒成長的更大。接著，相似於第1E圖所示，半導體晶粒114設置於載體基底100上。接著，實施相似於第1G-1N圖所示的多個製程。如此，形成一晶片封 裝體，如第3C圖所示。
如上所述，導電特徵112’的側壁可因為加熱製程後的晶粒成長而呈現起伏狀。第4圖根據一些實施例，繪示一晶片封裝體的一部份的一剖面示意圖。在一些實施例中，第4圖係如第1N圖所示的區域A的放大之剖面示意圖。
根據一些實施例，如第4圖所示，導電特徵112’之其中之一者的側壁具有起伏狀之表面形態。起伏狀之表面形態可歸因於導電特徵112’內部的晶粒成長。在一些實施例中，導電特徵112’之其中之一者的側壁的一最高部與一最低部之間的一高度變異R1介於約10nm至約130nm之間。在一些實施例中，導電特徵112’包含電鍍亮銅(electroplated bright copper)。在這些情況中，導電特徵112’之其中之一者的側壁的高度變異R1介於10nm至約20nm。
在一些實施例中，介面層113與導電特徵112’直接接觸。位於導電特徵112’其中之一者與介面層113其中之一者之間的介面402也具有起伏狀之表面形態。在一些實施例中，介面層113係保形層。因此，位於介面層113其中之一者與封裝層128之間的介面404也具有起伏狀之表面形態。在一實施例中，介面404的一最高部與一最低部之間的一高度變異R2與高度變異R1相同。在一些實施例中，介面404與介面402大體上平行。
在一些實施例中，並沒有間隙形成於介面層113與封裝層128之間。然而，本發明的實施例並不限於此。在一些情況中，可有微小間隙形成於介面層113與封裝層128之間。第5圖根據一些實施例，繪示一晶片封裝體的一部份之剖面示意 圖。在一些實施例中，第5圖係第1N圖所示的區域A的一放大之剖面示意圖。
在一些實施例中，一間隙G形成於介面層113與封裝層128之間。因為導電特徵112’被預加熱以誘發晶粒成長，間隙G可降低形成於導電特徵112’與封裝層128之間的應力或應變。因此，可控制間隙G在較小的程度。在一些實施例中，間隙G的寬度W可小於高度變異R1或R2。
本發明的實施例提供晶片封裝體的結構以及其形成方法。晶片封裝體包含貫穿封裝層的導電特徵，而封裝層(例如，成型化合物)包覆一或多個半導體晶粒。在形成封裝層之前，導電特徵被加熱以誘發晶粒成長。因此，在後續形成晶片封裝體的封裝層或其他元件時實施的熱製程可大體上不會誘發導電特徵更進一步的晶粒成長或導致高應力的產生。於後續的熱製程後，導電特徵可大體上維持表面形態。由於降低或避免了導電特徵的表面形態改變，封裝層與導電特徵中大體上沒有形成應力或應變。封裝層與導電特徵之間的介面之品質可因此被維持。因此，可有效地提升晶片封裝體的可靠度以及性能。
以上概略說明了本揭露數個實施例的特徵部件，使所屬技術領域中具有通常知識者對於後續本揭露的詳細說明可更為容易理解。任何所屬技術領域中具有通常知識者應瞭解到本說明書可輕易作為其它結構或製程的變更或設計基礎，以進行相同於本揭露實施例的目的及/或獲得相同的優點。任何所屬技術領域中具有通常知識者也可理解與上述等同的結 構或製程並未脫離本揭露之精神和保護範圍內，且可在不脫離本揭露之精神和範圍內，當可作更動、替代與潤飾。
104‧‧‧基層
112’‧‧‧導電特徵
113‧‧‧介面層
114‧‧‧半導體晶粒
116‧‧‧半導體基底
118‧‧‧鈍化層
122‧‧‧導電墊
124、134、142‧‧‧連接器
128‧‧‧封裝層
130‧‧‧重分佈層
132‧‧‧鈍化層
140‧‧‧元件
A‧‧‧區域

Claims (10)

  1. 一種晶片封裝體，包括：一半導體晶粒；一封裝層，至少部分包覆該半導體晶粒；一導電特徵，位於該封裝層中；以及一介面層，位於該導電特徵與該封裝層之間，其中該介面層包括一金屬氧化物材料。
  2. 如申請專利範圍第1項所述之晶片封裝體，其中該導電特徵包括一金屬材料，且該金屬氧化物材料包括與該金屬材料相同的一金屬元素。
  3. 如申請專利範圍第1項所述之晶片封裝體，其中該封裝層包括一成型(molding)化合物。
  4. 如申請專利範圍第1項所述之晶片封裝體，其中該介面層將該導電特徵與該封裝層分開。
  5. 如申請專利範圍第1項所述之晶片封裝體，更包括位於該封裝層以及該半導體晶粒上的一重分佈層，其中該重分佈層電性連接至該半導體晶粒，且該導電特徵藉由該重分佈層電性連接至該半導體晶粒。
  6. 一種晶片封裝體，包括：一半導體晶粒；一封裝層，其至少部分包覆該半導體晶粒；一導電特徵，貫穿該封裝層；以及一介面層，連續地圍繞該導電特徵，其中該介面層位於該導電特徵與該封裝層之間，且該介面層包括一金屬氧化物 材料。
  7. 一種晶片封裝體之形成方法，包括：形成一導電特徵於一載體基底上；設置一半導體晶粒於該載體基底上；形成一封裝層於該載體基底上並至少部分包覆該半導體晶粒以及該導電特徵；以及於形成該封裝層之前，加熱該導電特徵。
  8. 如申請專利範圍第7項所述之晶片封裝體之形成方法，其中於加熱該導電特徵時形成一氧化層，其包圍該導電特徵。
  9. 如申請專利範圍第7項所述之晶片封裝體之形成方法，更包括：形成一晶種層於一載體基底上；形成一遮罩層於於該晶種層上，其中該遮罩層具有一開口，其露出該晶種層的一部份；以及電鍍一導電材料於由該開口露出的該晶種層的該部分，以形成一導電特徵。
  10. 如申請專利範圍第7項所述之晶片封裝體之形成方法，其中在該半導體晶粒設置於該載體基底上之後加熱該導電特徵。
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TWI593029B (zh) 2017-07-21
CN106571346A (zh) 2017-04-19
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US20190006332A1 (en) 2019-01-03
US11329031B2 (en) 2022-05-10
US10074637B2 (en) 2018-09-11
DE102016100001B4 (de) 2021-05-27
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US10748882B2 (en) 2020-08-18
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