TW201637532A - Developing device for substrate material - Google Patents

Abstract

To provide a developing device for a substrate material, which can practically operate while first inhibiting generation of a trailing undeveloped part, a base undeveloped part, scum residue, or the like, and secondary inhibiting generation of pattern defects such as pattern collapse and pattern scattering. A developing device 6 develops a photosensitive resist C on an outer surface of a substrate material A by spraying a developer B through a spray nozzle 7 to the substrate material A. The spray nozzle 7 comprises a two-fluid nozzle, and mixes the developer B and air K to spray. The developer B sprayed is set to have particle diameter that can suppress generation of a trailing undeveloped part D, a base undeveloped part F, and scum residue E in the photosensitive resist C. The developer B and the air K are set to liquid pressure or air pressure that can suppress generation of pattern defects such as pattern collapse and pattern scattering in the photosensitive resist C. The developing device 6 can be used in combination with a developing device in an example of the prior arts.

Description

Base plate developing device

The present invention relates to a developing device for a base sheet. That is, it relates to a developing device for ejecting a developing solution to a base sheet to perform development processing in a process of using an electronic circuit board.

"technical background"

The development of a printed circuit board for an electronic device and other electronic circuits is extremely small, lightweight, extremely thin, and flexible, and the formed electronic circuit is also extremely remarkable in terms of miniaturization and high density.

Moreover, in the process of such an electronic circuit substrate, the developing device is also used together with a series of devices. That is, the developing device of the base material is used together with the exposure device, the etching device, the peeling device, the plating device, and the like of the base plate.

"Knowledge Technology"

(1) of FIG. 5 is a side explanatory view of the developing device 1 of the base material A. In the developing device 1, the developer B is ejected from the liquid ejecting head 2 to the transferred base material A.

Further, the photosensitive resist on the outer surface of the base material A is subjected to development treatment, and the photosensitive resist of the non-hardened portion other than the exposed-cured portion on the base material A is dissolved and removed by the developer B.

Further, in the conventional developing device 1, a one-fluid nozzle (a nozzle of a single liquid) is used as the liquid ejecting nozzle 2 for ejecting the developing solution B. Reference numeral 3 in the figure is a conveying roller for conveying the conveying table 4 of the base material A. Reference numeral 5 is a liquid tank of the developer B.

Prior technical literature Patent literature

The developing device 1 of the conventional base material A has, for example, the technique disclosed in Patent Document 1 below.

Patent Document 1 Japanese Patent Laid-Open Publication No. 2010-212660

However, the developing device 1 of the above-described conventional base material A has been identified for the following problems.

"First Question Point"

The first fingering is that the lateral ankle undeveloped D shown in FIG. 1 (3) and the residue residue E shown in FIG. 1 (4) are easily attached to the photosensitive resist C, and FIG. The base shown in (5) has no problem such as development F.

In other words, as described above, since the circuit pattern is made finer and higher in density, the circuit width L (for example, the width of the exposure-hardened portion G of the photosensitive resist C in the Subtractive development process), Or, the distance S between the circuits (for example, the space of the non-hardened portion of the photosensitive resist C in the subtractive development process) is a portion which is 30 μm or less and even 20 μm or less.

Further, in terms of the film thickness H of the photosensitive resist C, a thick film specification of 50 μm or more and even 100 μm or more is also required due to the demand.

In the conventional developing device 1, the developer B which is ejected from the liquid ejecting nozzle 2 and sprayed onto the base material A has a particle diameter (particle diameter, droplet diameter) of about 200 μm to 300 μm.

Therefore, it is difficult for the sprayed developer B to enter the non-hardened portion of the photosensitive resist C or dissolve the removed portion. The particle size of the developer B is too large, and it is likely to become inaccurate and more difficult to enter the depth of such a fine portion.

As a result, problems such as insufficient exchange of the developer B adhered to the previous spray, the base portion (bottom portion) where the developer B does not reach the photosensitive resin C, and the residue generated by the photosensitive resist C are caused.

Therefore, in the conventional developing device 1, it is easy to occur in the case where the side edge of the non-hardened portion of the photosensitive resist C and the portion of the dissolution-removing portion are undeveloped D or the residue residue E, particularly the fine circuit. Many such bad situations. Further, in these regions, when the film thickness H of the photosensitive resist C is thick, many cases where the base portion is not developed F may occur.

Due to these unfavorable conditions, it is difficult to achieve the fresh visible image as shown in (2) of FIG. There are many cases in which the development shape is deteriorated, the etching and plating to be performed are not performed normally, and the cause of the circuit failure is formed.

With regard to the conventional developing device 1, there has been an indication of such problems.

"2nd problem point"

The second indication is that the exposure-cured portion G is adversely affected by the photosensitive resist C, and problems such as pattern collapse, pattern scattering, and pattern short-circuit are likely to occur.

That is, in the conventional developing device 1, in order to avoid occurrence of the above-described side ankle undeveloped D, the agent residue E, the base undeveloped F, and the like, in many cases, the developer B is sprayed at a high pressure. . In other words, the photosensitive resist C on the outer surface of the base material A is sprayed by setting the developing solution B at a high pressure of about 0.15 MPa (refer to (1) of Fig. 5). The impact of the spray is strong enough to exceed the maximum flush value of 60mN.

Since the developer B having a large particle diameter is sprayed with such a high pressure and high impact force, the photosensitive resist C is a portion other than the object to be dissolved and removed, and a portion other than the hardened portion, that is, adjacent. The portion in which the removal portion and the exposure-hardened portion G are not dissolved (see (2) to (5) of Fig. 1) are liable to collapse, collapse, or fall due to the squeezing of the spray pressure.

Therefore, in this respect, the development shape is deteriorated, the etching and plating to be performed next are not performed normally, the circuit pattern collapses, the circuit pattern is scattered, and the circuit pattern is short-circuited, and the like, and there are many cases in which a defective circuit is formed.

The conventional developing device 1 has been acclaimed for such problems.

The developing device of the base material of the present invention has been developed in order to solve the above problems of the prior art in view of such actual circumstances.

That is, an object of the present invention is to provide a developing device for a base material sheet, which is characterized in that first, the development of the side ankle is not developed, the base is not developed, the scale residue or the like is suppressed, and the second effect is achieved. It suppresses the occurrence of pattern defects such as pattern collapse and pattern scattering.

"Resolving means for each request item"

The means of the present invention for solving such problems is as described in the scope of the patent application.

Request item 1 is as follows.

The developing device of the base sheet of claim 1 is used in the process of an electronic circuit board. The developer is sprayed onto the transferred substrate from the nozzle, whereby the photosensitive resist on the outer surface of the substrate is subjected to development treatment.

The nozzle is composed of a 2-fluid nozzle, whereby the developer is mixed with air and sprayed. The developer that is sprayed and sprayed is composed of minute droplets that can prevent the side ankle from being developed, the base undeveloped, and the scale residue from accompanying the photosensitive resist.

At the same time, the developer and the air are composed of hydraulic pressure and air pressure which can suppress pattern defects such as pattern collapse or pattern scattering accompanying the photosensitive resist.

Request item 2 is as follows.

The developing device of the base material of claim 2 is used in the request 1 for developing a particularly fine base material having a circuit width and a distance between circuits of 30 μm or less, particularly 20 μm or less.

The request item 3 is as follows.

The developing device of the base material of claim 3 is in claim 1, wherein the film thickness for the photosensitive resist is 25 μm or less, particularly 15 μm or less, particularly thin or 50 μm or more, particularly 100 μm or more. Development processing of the board.

Request item 4 is as follows.

A developing device for a base sheet of claim 4, wherein in the request 2 or 3, the developer is formed into fine droplets having a particle diameter of 10 μm or more and 180 μm or less, particularly 65 μm or more and 100 μm or less, and sprayed on the substrate .

The request item 5 is as follows.

The developing device of the base material of claim 5 is the request item 4, wherein the distance between the liquid discharge nozzle and the base material plate is from 25 mm or more to 100 mm or less, particularly from 35 mm or more to 60 mm or less. The developer and the air are set to a pressure of 0.02 MPa or more to 0.10 MPa or less.

The request item 6 is as follows.

The developing device of the base material of claim 6 is in the claim 5, and the treatment liquid is sprayed on the base plate with an impact force of a maximum punching value of 15 mN or more and 55 mN or less.

The request item 7 is as follows.

The developing device of the base material of claim 7 is the request item 6, wherein a plurality of the liquid ejecting nozzles are provided on each of the spray pipes. Further, each of the spray pipes is spaced apart from each other in the transport direction of the front and rear, and a plurality of branches are disposed in the left-right direction, and are reciprocated in the left-right direction.

"About the role and other aspects"

Since the present invention is constituted by these means, it has the following features.

(1) The developing device of the base sheet is used in the process of an electronic circuit board.

(2) Therefore, the developer can be ejected from the nozzle to apply the substrate to the development process.

(3) The nozzle is a 2-fluid nozzle. Further, the pressure of the developer or air is set to 0.02 to 0.10 MPa, and the distance between the nozzle and the base plate is set to 25 to 100 mm, preferably 35 to 60 mm.

(4) The particle size of the developer is set to 10 to 180 μm, preferably 65 to 100 μm, and the maximum value is set to 15 to 55 mN.

(5) In this manner, first, the developer is set to have a very small particle diameter. Therefore, the developer can surely enter the fine space in the circuit pattern in which the circuit width or the distance between the circuits is made finer and the density is 30 μm or less and even 20 μm or less.

(6) Therefore, the exchange of the old and new developing solutions can be promoted, and the situation in which the side ankles are not developed and the scale residue occurs is suppressed. At the same time, in the case where the film thickness of the photosensitive resist is 25 μm or less, particularly in the case of particularly thin 15 μm or less, the development treatment is confirmed and smoothed. Further, even in the case where the thickness of the photosensitive resist film is 50 μm or more, particularly 100 μm or more, the occurrence of undeveloped base portion is suppressed.

(7) Further, the developer or the air having such a small particle diameter is used at a low pressure and a low impact force. Therefore, it is possible to suppress the occurrence of collapse, collapse, and chipping of the insoluble removal portion of the photosensitive resist and the exposure-hardened portion.

"First effect"

First, it is suppressed that the side ankle is not developed, the base is not developed, and the scale residue is generated.

In the developing device of the base material of the present invention, a two-fluid nozzle is used as the liquid ejecting nozzle, and at the same time, the developing liquid is set to minute droplets having a particle diameter of 10 to 180 μm, particularly 65 to 100 μm, whereby the base material is sprayed.

Therefore, even in the circuit pattern which is made finer and higher in density, since the droplets of the developer are extremely small, it is possible to surely enter the fine space (the hardened portion region of the photosensitive resist).

Since the developer can reach the depth of the fine space, the exchange of the developer can be promoted, and even in the case where the thickness of the photosensitive resist film is large, the development process can be smoothly performed to suppress the undeveloped side of the side and the base. Undeveloped, residue residue, etc. occurred.

Therefore, according to the developing device of the base material according to the present invention, a sharp and well-developed development process can be realized, and etching or plating performed thereafter can be normally performed, and the quality of the formed circuit can be greatly improved.

"The second effect"

Secondly, the first effect described above is achieved while suppressing the occurrence of pattern defects such as pattern collapse, pattern scattering, and pattern short-circuit.

In the developing device of the base material of the present invention, the developer is set to be fine droplets, the pressure of the developer or air is set to 0.02 to 0.10 MPa, and the spraying is performed with an impact force of a maximum punching value of 15 to 55 mN. The developer having a smaller particle size is sprayed at a lower pressure and a lower impact force.

Therefore, the case where the insoluble portion is removed and the exposure-hardened portion is collapsed, collapsed, or missing due to the photosensitive resist can be suppressed, and subsequent etching or plating can be normalized. Therefore, the circuit pattern collapses, The occurrence of pattern defects such as scattering of circuit patterns and short circuit patterns can be suppressed, and the quality of the formed circuit can be greatly improved.

In this way, the problems existing in the prior art are completely solved, and the effects exerted by the present invention are remarkable and enormous.

1‧‧‧Developing device (conventional example)

1 ₁ ‧‧‧Developing device (conventional example)

1 ₂ ‧‧‧Developing device (conventional example)

2‧‧‧Spray nozzle (conventional example)

3‧‧‧Transport roller

4‧‧‧Conveyor

5‧‧‧ liquid tank

6‧‧‧Developing device (invention)

6 ₁ ‧‧‧Developing device (present invention)

6 ₂ ‧‧‧Developing device (invention)

7‧‧‧liquid nozzle (invention)

Room 8‧‧‧

9‧‧‧ pump

10‧‧‧Filter

11‧‧‧Pipe

12‧‧‧Spray tube

12 ₁ ‧‧‧Spray tube

12 ₂ ‧‧‧Spray tube

13‧‧‧Internal injection path

14‧‧‧Pushing source

15‧‧‧Filter

16‧‧‧ Flowmeter

17‧‧‧Pipe

18‧‧‧ Pressure gauge

19‧‧‧Spray hole

20‧‧‧cleaning device

A‧‧‧ base plate

B‧‧‧ developer

C‧‧‧Photosensitive Resist

D‧‧‧The lateral ankles are not developed

E‧‧‧Fouling residue

F‧‧‧ base is not developed

G‧‧‧Exposure hardening section

H‧‧‧ film thickness

J‧‧‧ separation distance

K‧‧‧Air

M‧‧‧Electronic circuit board

N‧‧‧Electronic circuit

P‧‧‧Transport direction

Q‧‧‧Width direction

L‧‧‧ circuit width

S‧‧‧Inter-circuit distance between circuits

1 (1) is a front explanatory view for explaining a liquid discharge nozzle and the like according to an embodiment of the present invention. (2), (3), (4), and (5) of FIG. 1 are enlarged longitudinal cross-sectional views showing the essential portions of the photosensitive resist after development processing. Further, Fig. 1 (2) is an embodiment for explaining the present invention. (3), (4), and (5) of Fig. 1 are for explaining a conventional example of this kind, and (3) of Fig. 1 shows an example in which the side ankle is not developed, and (4) of Fig. 1 is shown. An example of the residue of the scale, (5) of Fig. 1 shows an example of the lower undeveloped.

Fig. 2 is an explanatory photograph of a plating step, wherein (1) of Fig. 2 is an embodiment for explaining the present invention, and (2) of Fig. 2 is a conventional example for explanation.

Fig. 3 is a cross-sectional explanatory view for explaining a front surface of a developing device according to an embodiment of the present invention.

Fig. 4 is a plan explanatory view for explaining a developing device according to an embodiment of the present invention.

Fig. 5 (1) is a side explanatory view of the developing device. (2) of FIG. 5 is an enlarged plan view of a main part of the electronic circuit board.

Figure 6 is a block diagram showing the development processing steps of the embodiment of the present invention. 6(1) shows the first example, FIG. 6(2) shows the second example, and FIG. 6(3) shows the third example.

[Embodiment of the Invention]

Hereinafter, embodiments of the present invention will be described in detail with reference to Figs. 1 to 5 .

"Summary of the Invention"

First, an outline of the present invention will be described with reference to Fig. 1 .

The developing device 6 of the base material A is used in the process of the electronic circuit board, whereby the developing solution B is ejected from the liquid ejecting nozzle 7 to the transferred base material A, and the photosensitive resist C to the outer surface of the base material A is used. Development processing is carried out.

Further, the liquid discharge nozzle 7 is constituted by a two-fluid nozzle for mixing and ejecting the developer liquid B and the air K. The developer B sprayed and sprayed is formed by suppressing the occurrence of minute droplets of the side ankle undeveloped D, the base undeveloped F, and the scale residue E accompanying the photosensitive resist C.

At the same time, the developer B and the air K are formed by a hydraulic pressure and an air pressure which can suppress pattern defects such as pattern collapse, pattern scattering, and pattern short-circuiting accompanying the photosensitive resist C.

Therefore, the developing device 6 is used for the development process of the substrate width A in which the circuit width L and the inter-circuit distance S are 30 μm or less, particularly 20 μm or less, or the film thickness of the photosensitive resist C is 35 μm or more. In particular, development processing of the base material A of 50 μm or more.

The summary of the invention is as described above.

The present invention will be further described in detail below.

"About Electronic Circuit Board M"

The developing device 6 of the base material sheet A according to the present invention is used in the process of the electronic circuit board M. Therefore, first, an electronic circuit board M as a technical premise and a method of manufacturing the same will be generally described with reference to (2) of FIG. 5 and (2) of FIG.

The electronic circuit board M such as a printed wiring board has been progressing in terms of reduction in size, weight, thickness, flexibility, and the like, and the electronic circuit N to be formed is also remarkable in terms of miniaturization and high density.

Next, the representative specification of the base material A used in the process is 500 mm × 400 mm or 600 mm × 500 mm, and the plate thickness is about 0.06 mm × 1.6 mm.

As for the electronic circuit N to be formed, generally, the circuit width L is about 5 μm to 40 μm, the distance S between the circuits is about 5 μm to 40 μm, and the circuit height is about 12 μm to 35 μm.

Further, a typical application of the present invention is directed to a product having a circuit width L and a distance S between circuits of 30 μm or less, particularly 20 μm or less, that is, a circuit pattern which is made finer and higher in density.

Further, in the case of the base material sheet A, a two-sided substrate type in which the electronic circuit N is formed on both sides of the front and back sides is representative. Of course, a single-sided substrate type in which only the electronic circuit N is formed on one side is also considered, and the present invention is also widely applicable. It is applied to more layers of substrates and other various types of substrates.

In the method of manufacturing the electronic circuit board M, a subtractive process (wet) process, a semiadditive process, and various other manufacturing methods are known.

In the subtractive process, the outer surface of the base material A formed by the copper-clad laminate having the copper foil adhered to the insulating substrate: → first, coating or pasting the photosensitive resist C into a film; → then, After the circuit film is pasted and exposed; → the photosensitive resist C which is not hardened except the circuit forming portion is dissolved and removed by the developing; → the copper foil portion thus exposed is dissolved and removed by etching; → then, the peeling is exposed The photosensitive resist C of the hardened portion G is dissolved and removed.

In the subtractive process, the electronic circuit board M is produced by forming the electronic circuit N by the copper foil remaining on the outer surface of the base material A by undergoing such a process.

In the semi-additive process, the outer surface of the base material A which is subjected to electroless copper plating on the insulating substrate is: → first, coating or sticking the photosensitive resist C into a film shape; → then, after attaching the circuit film and exposing ;→Developing the photosensitive portion C of the circuit forming portion and the non-hardened portion by developing; → applying electroless copper plating to the electroless copper plating portion thus exposed; → in addition, by stripping or rapid etching, the retained The photosensitive resist C of the exposure hardening portion G or electroless copper plating is dissolved and removed.

In the semi-additive manufacturing method, an electronic circuit board M is formed by electroplating an electrolytic circuit to form an electronic circuit N on the outer surface of the base material A by performing such a process.

The manufacturing method of the electronic circuit board M is as described above.

<<Composition of Developing Device 6>>

Next, the configuration of the developing device 6 of the base material sheet A according to the present invention will be described with reference to Fig. 1 (1), Fig. 3, Fig. 4 and the like.

This developing device 6 is used in the developing step in the above-described manufacturing method step of the electronic circuit board M.

Further, in the developing device 6, the base material sheet A is horizontally conveyed toward the front and rear conveying directions P on the conveying roller 3 of the conveying table 4 in the chamber 8 (Fig. 1 (1), Fig. 3, Fig. 4, The illustration of the transport table 4 is omitted, please refer to (1) of FIG. 5 described above.

Further, the base material A transferred in this manner is ejected from the upper and lower sides as shown in the example, and the photosensitive resist C on the front and back outer surfaces of the base material A is subjected to development processing. In the developer B (DFR), sodium carbonate, potassium hydroxide, and other inorganic alkaline solutions have a concentration of about 0.1% to 0.9%, and the use temperature is about 25 ° C to 35 ° C.

Further, the developing solution B after the development process is discharged to the liquid tank 5 as shown in FIG. 3, and is collected and stored, and then transferred from the spray pipe 12 to the liquid discharge nozzle 7 via the pump 9, the filter 10, the pipe 11, and the like. Recycle the supply for reuse.

Further, the liquid discharge nozzle 7 of the developing device 6 is constituted by a two-fluid nozzle, whereby the developer liquid B is mixed with the air K and ejected.

In other words, in the two-fluid nozzle type liquid jet nozzle 7, as shown in Fig. 1 (1), the air K supplied by the pressure feed is linearly advanced in the internal injection passage 13, and the treatment liquid B which is also supplied by the pressure feed is supplied. Then, it is supplied and mixed from the orthogonal lateral direction in the middle of the internal injection passage 13 into the air K which is traveling straight.

By using the air K to advance straight in this way, there is an advantage that the internal resistance is small. The air K supplied from the lateral direction to the straight forward air K through the treatment liquid B has the advantage of being smoothly sucked in and mixed with the air K.

Further, as shown in FIG. 3, the air K is pumped by the pressure source 14 composed of a blower or a compressor, and is then sprayed through the filter 15, the flow meter 16, the pipe 17, and the like. The tube 12 _{2 is} supplied to the liquid discharge nozzle 7. In Fig. 3, reference numeral 18 is a pressure gauge; in (1) of Fig. 1, reference numeral 19 denotes an injection hole of the liquid discharge nozzle 7.

On the other hand, the treatment liquid B is supplied from the spray pipe 12 ₁ to the liquid discharge nozzle 7 in the above-described manner.

The liquid spray nozzle 7 is represented by using a flat cone nozzle (the spray pattern is an elliptical shape) or a full cone nozzle (a spray pattern is a circular shape), of course, various other than these. Nozzles can also be used.

Further, as shown in Fig. 4, the liquid ejecting nozzles 7 are provided in plural (5 or the like) on each of the spray pipes 12. At the same time, each of the spray tubes 12 is arranged in parallel in the left-right width direction Q orthogonal to the front-rear transport direction P. That is, for example, in the front and rear conveying directions P, the distance between the front and the rear is kept at intervals, and for example, four in the upper and lower portions are provided in the chamber 8.

Further, in the illustrated example, each of the spray tubes 12 and the liquid ejecting nozzles 7 can be horizontally slid between the predetermined distances in the left-right width direction Q in a synchronized motion while moving back and forth.

However, the air K is supplied from the spray pipe 12 ₂ and the treatment liquid B is supplied from the spray pipe 12 ₁ to the liquid discharge nozzle 7 respectively. Meanwhile, in the example of Fig. 3, the spray pipe 12 ₂ and the spray pipe 12 ₁ are separately disposed while moving synchronously and horizontally moving back and forth.

In contrast, as in the example shown in FIG. 4, the spray pipe 12 ₂ paired with the common spray nozzle 7 and the spray pipe 12 ₁ together constitute the spray pipe 12, and are integrally connected (for example, the inner portion of the spray pipe 12) When the structure is divided into two fluids, the above-described reciprocating movement operation becomes easy.

The configuration of the developing device 6 is as described above.

<<Regarding Various Settings of Developing Device 6>>

Next, various settings of the developing device 6 will be described with reference to FIG. 1 and the like.

First, the treatment liquid B and the air K are supplied to the liquid discharge nozzle 7 at a hydraulic pressure and an air pressure set to 0.02 MPa or more and 0.10 MPa or less. Further, the setting of about 0.02 MPa or more to 0.05 MPa or less is optimal for its function. It is supplied to the air nozzle 7 at such a lower supply pressure, and is ejected from the air nozzle 7 to the base material A at a slightly lower but substantially the same level of pressure.

The distance J from the liquid nozzle 7 to the base material A is set to be 25 mm or more and 100 mm or less. When the distance J between the injection holes 19 of the liquid ejecting nozzle 7 and the photosensitive resist C on the outer surface of the base material A is particularly set to 35 mm or more and 60 mm or less, the function is optimal.

Under the pressure setting and the separation distance J, the developer B sets the photosensitive resist C sprayed on the base material A with fine droplets having a particle diameter of 10 μm or more (average particle diameter of 30 μm or more) to 180 μm or less. In particular, the particle size setting of 65 μm or more to 100 μm or less is optimal for its function.

Next, the developer B is sprayed onto the photosensitive resist C of the base material A with an impact force of a maximum punching value of 15 mN or more and 55 mN or less. Incidentally, the flow rate of the developer B at the time of spraying is 10 m/sec or more to 25 m/sec or less. The transfer speed of the base material A on the transfer table 4 is 0.3 m/min or more.

The various settings of the developing device 6 are as described above.

"Bases on various settings"

Next, the basis of the above various settings will be described with reference to FIG. 1 and the like.

First, the minute droplets regarding the developer B are set as follows. When the particle diameter of the developer B exceeds 180 μm, the particle size is too large, and it is difficult to suppress the side leg sputum undeveloped D, the base undeveloped F, the residue residue E, and the like which are caused by the photosensitive resist C.

In other words, it is difficult for the developer B to enter the deep portion of the non-hardened portion of the photosensitive resist C or the portion to be dissolved and removed, which is used for the fine circuit or the film pressure, because the particle diameter is too large.

On the other hand, when the particle diameter of the developer B is less than 10 μm, the development processing ability is insufficient because the particle diameter is too small.

Next, the pressure setting of the developer B and the air K is as follows. In other words, when the hydraulic pressure or the air pressure exceeds 0.10 MPa, it is difficult to suppress the occurrence of pattern collapse such as pattern collapse, pattern scattering, and pattern short-circuit due to excessive pressure.

That is, the developing solution B causes excessive development, collapse, collapse, and missing of the exposed hardened portion G and the insoluble portion of the photosensitive resist C required for the fine circuit due to the high-pressure spray.

On the other hand, when the hydraulic pressure or the air pressure is less than 0.02 MPa, the development processing ability is insufficient due to the low pressure.

In addition, the setting of the distance J from the liquid discharge nozzle 7 to the base material A or the setting of the maximum flushing value of the developer B is based on the above-described pressure setting.

That is, when the separation distance J is less than 25 mm, or when the maximum ramming value exceeds 55 mN, the pressure is too high. On the other hand, when the distance J is more than 100 mm or the maximum value is less than 15 mN, the pressure is too low.

The basis for various settings is as described above.

Related Role

The developing device 6 of the base material sheet A according to the present invention is configured as described above. Therefore, its effect is as follows.

(1) The developing device 6 is used in a process of printing a wiring board or another electronic circuit board M. That is, a development step after the exposure step is used, and thereafter, for example, an etching step or a plating step is performed.

(2) Therefore, the developing device 6 ejects the developer B from the liquid discharge nozzle 7 to the transferred base material A, and develops the photosensitive resist C on the outer surface of the base material A (refer to (1) of Fig. 1). Figure 3, Figure 4, Figure 5 (1), etc.).

(3) Further, the developing device 6 uses a two-fluid nozzle as the liquid jet nozzle 7, and the liquid jet nozzle 7 or the like is set as follows (see (1) and the like in Fig. 1).

○ Supply of developing solution B and air K, injection pressure: 0.02 MPa to 0.10 MPa

○ The distance between the nozzle 7 and the base plate A is 25 mm to 100 mm, preferably 35 mm to 60 mm.

(4) The following conditions are set for the spraying conditions of the developer B to be sprayed on the base material A (see (1) and the like in Fig. 1).

○ The particle size of the developer B: 10 μm to 180 μm, preferably 65 μm to 100 μm.

○ Maximum washout value of developer B: 15 mN to 55 mN.

(5) By combining and adopting the above settings, the developing device 6 functions in the following manner.

First, according to the developing device 6, the developer B is atomized in the two-fluid nozzle type liquid jet nozzle 7, and becomes the above-described set minute droplets of extremely small particle diameter, and is sprayed at a high speed with air K. Plate A.

Therefore, even if the circuit width L or the distance S between the circuits is made fine, and the circuit pattern having a high density of 30 μm or less and even 20 μm or less is formed, the development processing can be smoothly performed.

In other words, since the developer B is formed of an extremely small set particle diameter, it is possible to surely enter the non-hardened portion and the dissolved and removed portion of the fine photosensitive resist C.

(6) That is, when the development processing is carried out, as in the above-described conventional technique, the case where the particle size of the developer B is too large to enter the depth of the portion is avoided.

It is also possible to promote the developer B which is sprayed later to push and replace the developer B previously sprayed and attached. Therefore, it is possible to suppress the occurrence of the lateral ankle undeveloped D (see (3) of Fig. 1) accompanying the photosensitive resist C. The occurrence of the scale residue E (see (4) of Fig. 1) due to the fragments of the photosensitive resist C or the like is also suppressed.

In addition, even if the film thickness H of the photosensitive resist C is 50 μm or more and even 100 μm or more, the developer B reaches the unhardened portion of the developing object and the deep portion (base portion, bottom portion) of the dissolved and removed portion, and is attached to the photosensitive layer. The base undeveloped F (see (5) of Fig. 1) which is caused by the resist C is also suppressed. Further, when the film thickness H of the photosensitive resist C is as thin as 25 μm or less and even 15 μm or less, the development treatment can be carried out reliably and smoothly.

(7) Next, in the developing device 6, the developing solution B and the air K having the fine particle diameter are sprayed onto the photosensitive resist C on the outer surface of the base material A at a relatively low pressure and a low impact force as described above.

In the present invention, unlike the above-described conventional technique, the developer B having a large particle diameter is sprayed with a high pressure and a high impact force, and the spray is applied at a lower pressure and a lower impact force.

Therefore, at the time of development processing, it is possible to suppress the dissolution-removed portion and the non-hardened portion (that is, the insoluble removal portion and the exposure-hardened portion G) accompanying the photosensitive resist C (refer to (2) of FIG. 1). To (5)) Inadvertent overexploitation, collapse, collapse, and loss.

Even when the film thickness H of the photosensitive resist C is thick and the height of the exposure-hardened portion G is high (refer to (5) of FIG. 1), the occurrence of these defects can be suppressed.

Although the developing device 6 is a fixed type of spray, it is also possible to use a swing type spray. In either case, it is important that the developer B performs a thorough and uniform spray on the base sheet A.

The function and the like of the developing device 6 of the present invention are as described above.

"Application of Developing Device 6"

The application of the developing device 6 according to the present invention will be described with reference to Fig. 6 and the like.

First, explain and confirm the premise. The developing device 6 of the present invention (2 fluid type, see FIGS. 1 to 4) and the developing device 1 of the conventional example (1 fluid type, refer to (1) of FIG. 5) are both from the liquid discharge nozzle 7 or the liquid discharge. The nozzle 2 sprays the developer B on the copper-clad laminate base sheet A, and develops the photosensitive resist C attached to the outer surface of the base sheet A for development. In other words, the photosensitive resist C of the non-hardened portion (optional portion) other than the exposure-hardened portion G (required portion) is dissolved and removed by the developer B (see (2) and the like in Fig. 1).

Next, the development processing steps are as shown in the respective drawings of Fig. 6, and are often composed of three stages. That is, the base sheet A is first in the order of developing the developing device 6 ₁ or the developing device 1 _{1 of the} first stage, then developing the developing device 6 _{2 of} the second stage or the developing device 1 ₂ , and then the cleaning device 20 of the final stage, The process is performed while transporting from the upstream side to the downstream side in the transport direction P.

First, in the first stage of development, rough development processing is performed on the base material A. The photosensitive resist C which is not hardened is roughly dissolved and removed.

Then, in the second stage of development, a finer and finer development treatment is performed on the base material A. The objective is to completely dissolve and remove the photosensitive resist C which is not hardened (not partially) which is left undissolved and removed in the first stage of development. Further, the residue of the photosensitive resist C is not carried into the next cleaning device 20.

In the final stage, the developer B or the like adhering to the base material A is washed with water by the cleaning device 20.

Further, in the example shown in (1) of Fig. 6, the developing device 6 _{1 of the} present invention is used in the first stage of development, and the developing device 1 _{2 of the} conventional example is used in the second stage of development.

In the example shown in Fig. 6 (2), the developing device 1 _{1 of the} conventional example is used in the first stage of development, and the developing device 6 _{2 of the} present invention is used in the second stage of development.

In the example shown in (3) of Fig. 6, the developing devices 6 ₁ and 6 _{2 of the} present invention are used in both the first stage and the second stage of development.

In this manner, the developing device 6 (2 fluid) of the present invention can be used alone or in combination with the developing device 1 (1 fluid) of the conventional example.

Of course, the developing device 6 ₁ of the present invention used in the first stage of development and the developing device 6 ₂ used in the second stage of development are both interlinked and have the same operational effects. However, the side corner feet undeveloped, undeveloped base, the degree of inhibition occurring residues and other dirt on the agent, the developing device ₆₁ schematically genus, the developing device 6 then it is detailed properties _2.

Further, the developing device developing the second stage is used ₆₂ or the developing device ₁₂ is also referred to as a second developing device (second developing unit, the second developing tank), after (POST) the developing device (the developing machine, the groove ), or flushing the developing device (flushing the developing machine, flushing the tank) and the like.

Further, although the development processing step of the example shown in Fig. 6 is constituted by three stages (three-link type), other configuration examples may be employed.

For example, it may be a two-stage (two-connected) configuration example of the developing device 6 and the cleaning device 20, or a four-stage combination of the developing device 6 (2 fluid) and the developing device 1 (1 fluid) and the cleaning device 20 ( 4 connected) configuration examples and other various combinations of configuration examples.

The application of the developing device 6 of the present invention is as described above.

[Examples] "Embodiment 1"

Hereinafter, embodiments of the invention will be described. First, regarding Example 1, it is as follows.

Fig. 2 is an explanatory photograph of a plating step, wherein (1) is related to Embodiment 1 of the present invention; (2) is related to the aforementioned conventional example.

Next, the first embodiment of (1) of FIG. 2 shows a state in which electrolytic plating treatment is performed in the next step after performing development processing using the developing device 6 of the present invention (semi-addition), that is, the obtained electronic circuit substrate M. Electronic circuit N.

In contrast, the comparative example of (2) of FIG. 2 shows a state in which electrolytic plating treatment is performed in the next step after the development processing is performed using the developing device 1 of the conventional example shown in (1) of FIG. 5 (half addition), It is the electronic circuit N of the electronic circuit board M produced.

Further, the developing device 6 of the first embodiment to be tested and the developing device 1 of the conventional example have various other tests except that the former nozzle 7 is a two-fluid nozzle and the latter nozzle 2 is a one-fluid nozzle. The conditions are exactly the same.

As a result, when the development treatment is carried out by the embodiment 1 of the present invention, it is presumed that the side ankle undeveloped D or the scale residue E does not occur, so that the plating treatment in the next step can be illustrated in the photograph of FIG. 2 (1). A clear and well plated shape is achieved as shown.

On the other hand, when the development treatment is carried out by a conventional example, it is presumed that the side ankle undeveloped D or the scale residue E has occurred.

That is, as shown in the explanatory photograph of (2) of Fig. 2, the electronic circuit N formed by the plating process in the next step has a pit having a poor plating shape at the base portion. It is judged that the reason is that the side pedals are not developed D or the like in the development processing of the previous step.

In this manner, the comparison of the photographs of the plating state of Fig. 2 can also demonstrate the effects of the first embodiment and the present invention.

The related embodiment 1 is as described above.

<<Example 2》

Next, the test results of Embodiment 2 of the present invention will be described.

Tables 1 and 2 below show test result data obtained for the developing device 6 of the present invention.

First, as shown in Table 1 or Table 2, the test conditions are as follows.

○ The distance between the nozzle 7 and the base plate A is J: 50 mm (communication)

○ Hydraulic pressure of developing solution B: 0.03 MPa to 0.1 MPa

○ Air K pressure: 0.03MPa to 0.1MPa

○ Flow rate of developer B: 0.53 L/min to 0.81 L/min

○Air K flow rate: 8L/min to 17L/min

According to each combination of the respective test conditions, the particle diameter of the developer B sprayed by the nozzle 7 and the maximum impact value of the impact force of the developer B on the substrate A are respectively located directly below the nozzle 7. The measurement was performed on the base plate A.

The measurement system uses a phase Doppler interferometer and a weighing sensor micro impulse force measuring device. As a result, the test data of Table 1 was obtained in terms of the particle size, and the test data of Table 2 was obtained in terms of the maximum punch value.

First, as shown in Table 1, with respect to the particle diameter of the developer B, the measured value is 65.9 μm to 100.6 μm, and the particle diameter of the set value of 10 μm to 180 μm, particularly 65 μm to 100 μm, which is required for the present invention, can be stably obtained. (In addition, regarding the flow rate of the developer B, the measured value is 10.5 m/s to 22.4 m/s.)

Next, as shown in Table 2, with respect to the maximum punching value of the developer B, the measured value was 18 mN to 52 mN, and the impact force of the set value of the present invention of 15 mN to 55 mN was stably obtained.

The related embodiment 2 is as described above.

6‧‧‧Developing device

7‧‧‧liquid nozzle

13‧‧‧Internal injection path

19‧‧‧Spray hole

A‧‧‧ base plate

B‧‧‧ developer

C‧‧‧Photosensitive Resist

G‧‧‧Exposure hardening section

H‧‧‧ film thickness

J‧‧‧ separation distance

K‧‧‧Air

L‧‧‧ circuit width

S‧‧‧Inter-circuit distance between circuits

Claims (7)

A developing device for a base plate is a developing device used for a process of an electronic circuit board, and the developing device ejects a developing solution from a liquid nozzle to a substrate to be conveyed, and performs a photosensitive resist on an outer surface of the substrate. a developing process, the liquid nozzle is composed of a 2-fluid nozzle, whereby the developer and the air are mixed and sprayed, and the developer sprayed and sprayed is capable of suppressing the occurrence of the lateral ankles accompanying the photosensitive resist The developing solution, the base is not developed, and the fine droplets of the scale residue are formed. At the same time, the developer and the air are hydraulically and emptyly capable of suppressing pattern failure such as pattern collapse or pattern scattering accompanying the photosensitive resist. Composed of air pressure. The developing device for a base material according to claim 1, wherein the developing device uses a development process of a particularly fine base material having a circuit width and a distance between the circuits of 30 μm or less, particularly 20 μm or less. The developing device for a base material according to claim 1, wherein the developing device uses a film thickness of 25 μm or less, particularly 15 μm or less, or particularly 50 μm or more, particularly 100 μm or more. Development processing of thick base sheets. The developing device of the base material according to the item 2 or 3, wherein the developer is sprayed on the base material by forming minute droplets having a particle diameter of 10 μm or more and 180 μm or less, particularly 65 μm or more and 100 μm or less. The developing device of the base material according to claim 4, wherein a distance between the liquid discharge nozzle and the base material is 25 mm or more and 100 mm or less, particularly 35 mm or more and 60 mm or less, and the developing solution and the air are provided. The pressure system is set to be 0.02 MPa or more to 0.10 MPa or less. A developing device for a base sheet according to claim 5, wherein the developing solution sprays the base sheet with an impact force of a maximum punching value of 15 mN or more to 55 mN or less. The developing device of the base material according to claim 6, wherein the liquid nozzles are respectively provided on each of the spray pipes, and each of the spray pipes is spaced apart from each other in the front-rear transport direction, and a plurality of branches are arranged in the left-right direction. While moving back and forth in the left and right direction.