JP3186478U - Dry film resist thinning equipment - Google Patents

Abstract

Disclosed is a dry film resist thinning apparatus capable of adjusting the thickness after thinning without greatly changing the processing speed.
An apparatus for thinning a dry film resist on a substrate having at least two continuous thinning units 1 and 2. By having a plurality of thin film processing units 1 and 2, the thin film processing amount can be freely set at a stable processing speed without largely changing the thin film processing speed. If there are three thin film processing units, use one thin film processing unit when performing the thin film processing to the minimum, and use all thin film processing units when you want to perform a large amount of thin film processing. To do.
[Selection] Figure 2

Description

  The present invention provides a dry film resist thinning apparatus capable of adjusting the thickness after thinning without greatly changing the processing speed.

  As a method for manufacturing a printed wiring board or a lead frame, there is a subtractive method in which an etching resist layer is formed on a substrate and a metal layer not covered with the etching resist layer is removed by etching. Compared to other methods, this method has advantages such as a short manufacturing process and low cost, and strong bonding strength between the conductive pattern and the insulating plate. It has become mainstream. As a method of providing an etching resist layer by a subtractive method, a method using a sheet-like photosensitive material called a dry film resist and a liquid photoresist can be cited. A dry film resist is generally preferred because it can protect the holes.

  Nowadays, along with the recent downsizing and multi-functionalization of electronic devices, printed wiring boards used inside the devices are also being densified and conductive patterns are being miniaturized. Printed wiring boards having a conductive pattern of 50 to 80 μm and a conductor gap of 50 to 80 μm are manufactured. In addition, with higher density and finer wiring, ultrafine conductive patterns of 50 μm or less are required. Along with this, the requirements for pattern accuracy and impedance are also increasing. In order to achieve such a fine conductive pattern, a semi-additive method has been conventionally studied. However, there are problems such as a significant increase in the number of steps and poor adhesion of plated copper.

  When such a fine conductive pattern is formed by the subtractive method, it is of course necessary to improve the technical level and the management level of the entire production line, but etching is a major point among them. This is because side etching that proceeds from the side of the conductor, which is a feature of the subtractive method, becomes a problem. In order to suppress the amount of side etching, liquid composition management, the angle and strength of spraying the liquid onto the substrate, etc. It is necessary to adjust the optimum etching conditions. Further, side etching is affected not only by adjusting the etching conditions but also by the thickness of the etching resist layer. That is, the thicker the film, the more difficult the liquid circulates between the fine resist patterns, and as a result, the side etching increases. The thickness of the dry film resist which is currently mainstream is about 25 μm, but in order to form a fine conductive pattern, it is necessary to make the resist film thickness as thin as possible. In recent years, dry film resists having a thickness of 10 μm or less have been developed and commercialized. However, in such a thin dry film resist, there is a problem that resist peeling or disconnection occurs due to the mixing of bubbles with dust as a nucleus and insufficient uneven followability.

  In order to solve such a problem, in a method of producing a conductive pattern by a subtractive method, after pasting a dry film resist on a substrate, an alkaline aqueous solution having an inorganic alkaline compound content of 5 to 20% by mass, There has been proposed a conductive pattern forming method characterized in that a dry film resist is thinned, and then a circuit pattern is exposed, developed, and etched (see, for example, Patent Document 1).

  The thinning process includes (1) a thinning process in which a photocrosslinkable resin component in a dry film resist is micellized using an aqueous alkaline solution, and (2) a micelle removal process in which micelles are removed with an alkaline aqueous solution at pH 5-9. , (3) Water washing treatment for washing the surface with water, and (4) Drying treatment for removing the washing water. Therefore, if the treatment time with the alkaline aqueous solution of (1) is increased, the thinning proceeds accordingly, and if the treatment time is shortened, the thinning is reduced. However, it has been found that there is a limit in controlling the processing time by the processing speed. That is, when a thin film processing apparatus having only one unit of a thin film processing unit of a certain length is used, if the processing speed is lowered in order to lengthen the thin film processing, the work efficiency is lowered and the cleaning process or The drying process became excessive. Further, when the processing speed is increased in order to shorten the thinning process, the uniformity of the thinning is impaired, and the cleaning process and the drying process are insufficient. As described above, there is a limit in controlling the film thickness of the dry film resist by the thinning process of one unit.

  In addition, there has been proposed a substrate processing apparatus in which an etching processing unit is composed of a plurality of unit processing units, an etching solution supply unit and an inert solution supply unit are provided, and these are selectively used. However, the purpose of this substrate processing apparatus is to effectively use processing units other than the etching processing unit without adversely affecting the substrate, and the etching processing amount can be adjusted without greatly changing the etching processing speed. It was not a simple etching apparatus, and even pre-processing was not performed for the purpose of uniformity after processing (see, for example, Patent Document 2).

International Publication No. 2009/096438 Pamphlet Japanese Patent No. 3592077

  The present invention provides a dry film resist thinning apparatus capable of adjusting the thickness after thinning without greatly changing the processing speed.

  As a result of studies by the present inventors, a thin film processing apparatus for dry film resist having at least two continuous thin film processing units and an unused thin film having at least two continuous thin film processing units The above-mentioned problems could be solved by a dry film resist thinning apparatus that uses a water washing treatment unit upstream of the thinning treatment unit.

  The present invention relates to an apparatus for thinning a dry film resist on a substrate. By providing a plurality of thin film processing units, it is possible to freely set the thin film processing amount at a stable processing speed without greatly changing the thin film processing speed. For example, in the case of having three thin film processing units, when performing the thin film processing to the minimum, one thin film processing unit is used. May be used.

  Further, the thin film processing apparatus of the present invention is characterized in that an unused thin film processing unit can be changed to a water washing processing unit, and the water washing processing unit is used on the upstream side of the thin film processing unit. This is a thin film processing apparatus for dry film resist. The unused thinning unit can be used as a water washing unit, and by performing the water washing treatment before the thinning treatment, the hydrophilic groups of the polymer existing on the dry film resist surface are reoriented and the hydrophilicity is made uniform. Furthermore, it is possible to remove contaminants and foreign matters adhering to the dry film resist surface, and it is possible to perform a more uniform thinning process without leaving a thickness. In this way, the water washing process must be performed before the thinning process in order to perform a more uniform thinning process. When washing treatment is performed after thinning treatment, the photocrosslinkable resin component in the dry film resist micellized by the thinning treatment unit is removed insufficiently by washing treatment, and the uniformity after thinning is significantly impaired. It is.

It is the schematic which showed an example of the thin film processing apparatus of this invention which has three thin film processing units. It is the schematic which showed the structure of the thin film processing unit which can be changed into a water-washing processing unit.

The thin film resist thinning apparatus of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view of a thin film processing apparatus of the present invention. It has three thin film processing units, and is a thin film processing unit including unit 1, unit 2, and unit 3 from the upstream side. The number of thin film processing units may be two or more, and is not particularly limited. After the thinning unit, (2) a micelle removal process for removing micelles with an alkaline aqueous solution of pH 5-9, (3) a water washing process for washing the surface with water, and (4) a drying process for removing the washing water. The thinning process is completed.

  Each unit can be used properly according to the desired amount of thinning treatment. For example, when one unit is used as the thinning process, any one of the units 1 to 3 may be used. Even when two units are used, any two units among units 1 to 3 may be used. Of course, all the units can be used as a thinning unit. When an unused thinning unit is used as a washing unit, it is necessary to install the washing process upstream of the thinning unit. For example, when one unit is used as a thinning process, the unit 1 can be a water washing process, the unit 2 or 3 can be a thinning process, the unit 2 can be a water washing process, and the unit 3 can be a thinning process. You can also. When two units are used as the thinning process, the unit 1 is the water washing process, and the units 2 and 3 are the thinning process. Thus, by appropriately selecting the water washing treatment and the thinning treatment as necessary, it is possible to freely adjust the degree of the thinning treatment without largely changing the treatment speed.

  FIG. 2 is a schematic view schematically showing the configuration of a thinning unit that can be changed to a water washing unit. In FIG. 2, the thin film processing units 1 and 2 are shown and omitted, but the thin film processing units can be continuously installed downstream. After the thin film processing unit, the thin film processing is completed through a micelle removing process, a cleaning process, and a drying process.

  The workpiece 4 is introduced into the thin film processing unit 1 from the introduction part 3 formed in the thin film processing unit 1, and the work 4 is converted into the thin film processing unit 2 by a transfer roll 5 designed to sandwich the work 4 vertically. And then further downstream.

  The thin film processing unit 1 is provided with a thin film processing nozzle 6 and a water washing nozzle 7. When used as a thin film processing unit, the processing liquid 4 is ejected after various processing liquids are supplied to the thin film processing nozzle 6, and when used as a water washing processing unit 7, the water washing processing nozzle 7 is processed. it can. The processing liquid for thin film processing is supplied from the storage tank 8 through the chemical liquid pump 9 for thin film processing. A treatment liquid for the water washing treatment is supplied from the water supply pipe 10. Thus, by changing the liquid to be supplied, each unit can be freely switched to a thin film processing unit and a water washing processing unit. When neither liquid is supplied, it becomes an unused unit.

  A thinning treatment chemical solution recovery pipe 11 is installed in the lower part of the thinning processing unit 1, and the processed chemical solution is discarded through the waste liquid pipe 12. A valve 13 is attached to the thinning treatment chemical recovery pipe 11 and the waste liquid pipe 12, and it is possible to select recovery and disposal by operating these valves. Although omitted in FIG. 2, the thin film processing unit 2 and the thin film processing unit downstream thereof also have the same structure as that of the unit 1.

  The dry film resist thinning process according to the present invention will be described in detail. First, a dry film resist is affixed on at least one side of the substrate to produce a workpiece. For the pasting, for example, a laminator device that presses and presses a rubber roll heated to 100 ° C. or higher is used. The substrate may be subjected to a pretreatment such as pickling. After pasting, the carrier film of the dry film resist is peeled off, and the thin film resist is subjected to a thinning treatment with an alkaline aqueous solution of 5 to 20% by mass.

  After the dry film resist thinning treatment, the circuit pattern is exposed, further developed to form an etching resist layer, and then a metal layer other than the etching resist layer is etched to form a conductive pattern.

  Examples of the substrate include a printed wiring board and a lead frame substrate. Examples of the printed wiring board include a flexible substrate and a rigid substrate. As the flexible substrate, polyester, polyimide, aramid, or polyester-epoxy base is usually used as a material for the insulating layer. The thickness of the insulating layer of the flexible substrate is 5 to 125 μm, and a metal layer of 1 to 35 μm is provided on both sides or one side thereof, which is very flexible. The thickness of the insulating layer or metal layer may be outside this range. The flexible substrate may be in a sheet form or a roll form. If it is a roll form, processes such as thinning, exposure, development, and etching can be processed by a roll-to-roll system.

  As a rigid substrate, a necessary number of insulating substrates in which epoxy resin or phenol resin is dipped in a paper base material or glass base material are stacked to form an insulating layer, and a metal foil is placed on one or both sides, and heated and pressed. A laminated layer provided with a metal layer can be used. In addition, a multilayer shield plate produced by laminating prepreg, metal foil, etc. after processing the inner layer wiring pattern, and a multilayer plate having through holes and non-through holes are also included. The thickness is 60 μm to 3.2 mm, and the material and thickness thereof are selected according to the final use form as a printed circuit board. Examples of the material for the metal layer include copper, gold, silver, and aluminum, with copper being the most common. These printed circuit boards include, for example, “Printed Circuit Technology Handbook-Second Edition” (edited by the Printed Circuit Society of Japan, published by Nikkan Kogyo Shimbun) and “Multilayer Printed Circuit Handbook” (JA Scarlet, edited by Co., Ltd.). What is described in Modern Chemical Co., Ltd.) can be used. Examples of the lead frame substrate include iron nickel alloy and copper alloy substrates.

  The dry film resist according to the present invention is a commonly used photosensitive material for circuit formation, and includes a negative resist in which a light irradiation part is cured and insolubilized in a developer. The dry film resist is composed of at least a photocrosslinkable resin layer, and a photocrosslinkable resin layer is provided on a carrier film (transparent support) such as polyester. In some cases, a protective film such as polyethylene is used on the photocrosslinkable resin layer. It is the structure which coat | covered. The negative photocrosslinkable resin layer is composed of, for example, a binder polymer containing a carboxyl group, a photopolymerizable unsaturated compound, a photopolymerization initiator, a solvent, and other additives. Their blending ratio is determined by a balance of required properties such as sensitivity, resolution, hardness and tenting property. Examples of photocrosslinkable resin compositions are “Photopolymer Handbook” (edited by Photopolymer Social Society, published in 1989, published by Kogyo Kenkyukai) and “Photopolymer Technology” (edited by Akio Yamamoto and Mototaro Nagamatsu, 1988). Published by Nikkan Kogyo Shimbun, etc.), and a desired photocrosslinkable resin composition can be used. The thickness of the photocrosslinkable resin layer is preferably 15 to 100 μm, and more preferably 20 to 50 μm. If the thickness is less than 15 μm, resist peeling or disconnection may occur due to mixing of bubbles with dust as a nucleus or uneven followability, and if it exceeds 100 μm, the amount dissolved and removed by thinning increases. The thinning time may be long.

  The water washing treatment according to the present invention is a step of making the hydrophilic property of the dry film resist surface uniform and removing contaminants and foreign substances present on the dry film as a pretreatment for the thinning treatment. Examples of water used for the water washing treatment include tap water, industrial water, and pure water. Among these, pure water is preferably used. Pure water that is generally used for industrial purposes can be used. For example, it can be obtained by treating tap water with a filter treatment, activated carbon treatment, or an ion exchange resin. The amount of organic matter in pure water is not particularly limited, but is preferably 1000 ppb or less. The specific resistance value indicating the amount of ions is not particularly limited, but is preferably in the range of 0.1 to 15 MΩ · cm. The washing method includes a dipping method, a battle method, a spray method, brushing, scraping and the like, and the spray method is most suitable for removing contaminants and foreign matters on the dry film resist. Although the conditions (temperature, spray pressure, time) of the spray treatment can be adjusted as appropriate, specifically, the treatment temperature is preferably 10 to 30 ° C, more preferably 20 to 25 ° C. The spray pressure is preferably 0.01 to 0.5 MPa, more preferably 0.05 to 0.3 MPa.

  As the treatment liquid used for the thinning treatment, an aqueous solution containing an inorganic alkaline compound in an amount of 5 to 20% by mass with respect to the treatment liquid can be used. When the content of the inorganic alkaline compound is less than 5% by mass, micelles in the middle of dissolution and removal are likely to be dissolved and diffused, and the thinning process may become uneven due to the flow of the treatment liquid. Moreover, when content of an inorganic alkaline compound exceeds 20 mass%, precipitation will occur easily and it may be inferior to the temporal stability of a liquid, and workability | operativity. The pH of the solution is preferably in the range of 9-12. In addition, a small amount of a surfactant, an antifoaming agent, a solvent and the like can be added as appropriate.

  Inorganic alkaline compounds include alkali metal carbonates such as lithium, sodium or potassium carbonates or bicarbonates, alkali metal phosphates such as potassium and sodium phosphates, lithium, sodium or potassium hydroxides, etc. Inorganic alkaline compounds selected from alkali metal silicates such as alkali metal hydroxides, potassium and sodium silicates. Among these, particularly preferable compounds include alkali metal carbonates.

  The thinning treatment according to the present invention is a treatment for reducing the thickness of the dry film resist substantially uniformly, and is 0.05 to 0.9 times the thickness before the thinning treatment. Thinning methods include a dip method, a battle method, a spray method, brushing, scraping, and the like, and the spray method is most suitable for the removal rate of the dry film resist. The conditions (temperature, spray pressure, time) of the spray treatment are appropriately adjusted according to the dissolution / removability of the dry film resist to be used. Specifically, the treatment temperature is preferably 10 to 50 ° C, more preferably 15 to 40 ° C, and further preferably 15 to 35 ° C. The spray pressure is preferably 0.01 to 0.5 MPa, and more preferably 0.02 to 0.3 MPa.

  The micelle removal treatment according to the present invention means that in the thinning treatment, by supplying an excessively high concentration alkaline aqueous solution, the photocrosslinkable resin component that has been micellized in the middle of dissolution is once insolubilized, This is a step of dissolving the material whose dissolution and diffusion has been suppressed. In the micelle removal treatment, an aqueous solution having a pH of 5 to 10 containing at least one of inorganic alkaline compounds selected from alkali metal carbonates, alkali metal phosphates, and alkali metal silicates is supplied and insolubilized by thinning treatment. The resulting photocrosslinkable resin layer component can be redispersed and dissolved and removed. In the micelle removal treatment, if the pH of the aqueous solution is less than 5, the photocrosslinkable resin component dissolved by redispersion may aggregate and become insoluble sludge and adhere to the thinned photocrosslinkable resin layer surface. On the other hand, when the pH of the aqueous solution exceeds 10, dissolution and diffusion of the photocrosslinkable resin layer is promoted, and uneven film thickness may easily occur in the surface. Moreover, you may use the processing liquid of a micelle removal process, after adjusting the pH of a liquid using sulfuric acid, phosphoric acid, hydrochloric acid, etc.

In the micelle removal treatment, the supply flow rate of the aqueous solution having a pH of 5 to 10 is preferably 0.030 to 1.0 L / min per 1 cm ^{2 of the} photocrosslinkable resin layer. 0.050 to 1.0 L / min is more preferable, and 0.10 to 1.0 L / min is more preferable. When the supply flow rate is within this range, the thinning treatment can be performed almost uniformly in the surface without leaving insoluble components on the surface of the photocrosslinkable resin layer after thinning. If the supply flow rate per 1 cm ^{2 of the} photocrosslinkable resin layer is less than 0.030 L / min, insoluble photocrosslinkable resin layer components may be poorly dissolved. On the other hand, when the supply flow rate exceeds 1.0 L / min, parts such as a pump necessary for supply become enormous, and a large-scale device may be required. Furthermore, when the supply flow rate exceeds 1.0 L / min, the effect of dissolving and diffusing the photocrosslinkable resin layer component may not change. As the liquid supply method in the micelle removal treatment, the spray method is most preferable from the viewpoint of the dissolution rate of the photocrosslinkable resin layer and the uniformity of liquid supply. Further, in order to efficiently produce a liquid flow on the surface of the photocrosslinkable resin layer, it is preferable to spray from the direction inclined with respect to the direction perpendicular to the surface of the photocrosslinkable resin layer.

  The washing process and the micelle removal process are basically similar in that the aqueous solution is sprayed by the spray method, but the washing process does not require the supply flow rate and spray pressure as the micelle removal process, and the micelle removal process. Then, it differs in the point which supplies the aqueous solution of pH 5-10 containing an inorganic alkaline compound. When considering the case where the water washing process is installed after the thinning process by unitization, that is, the case where the micelle removal treatment process is replaced with the water washing treatment process in terms of structure, the water washing treatment is more efficient than the micelle removal treatment. In addition, since the spray pressure is low, the photocrosslinkable resin component in the dry film resist that has been micellized by the thinning process is not completely removed by the water washing unit, but is removed insufficiently. As a result, the uniformity after thinning is significantly impaired. As described above, the water washing process is a process of making the hydrophilicity of the resist surface uniform and removing contaminants and foreign substances present on the dry film. It also differs from the micelle removal process in that high water is used.

  It is necessary to perform a thinning treatment with an aqueous solution of 5 to 20% by mass of an inorganic alkaline compound and a micelle removal treatment with an aqueous solution with a pH of 5 to 10, followed by a water washing treatment with sufficient washing with water. There are a dip method, a battle method, a spray method, and the like as water washing treatment methods, and the spray method is most suitable because of a high processing speed.

  After the thinning process, the conductive pattern can be formed by exposing, developing and etching the circuit pattern. Circuit pattern exposure methods include xenon lamps, high-pressure mercury lamps, low-pressure mercury lamps, ultra-high-pressure mercury lamps, reflection image exposure using UV fluorescent lamps as light sources, single-sided, double-sided contact exposure using photo tools, proximity method, projection method And laser scanning exposure. When performing scanning exposure, a laser light source such as a He—Ne laser, He—Cd laser, argon laser, krypton ion laser, ruby laser, YAG laser, nitrogen laser, dye laser, or excimer laser is used according to the emission wavelength. The exposure can be performed by wavelength conversion and scanning exposure, or by scanning exposure using a liquid crystal shutter and a micromirror array shutter.

  As a development method, a developer suitable for the dry film resist to be used is used and sprayed from the vertical direction of the substrate toward the substrate surface to remove unnecessary portions as a resist pattern, and an etching resist corresponding to a circuit pattern Form a layer. In general, a 1 to 3% by mass aqueous sodium carbonate solution is used.

  Etching is a method of removing an exposed metal layer other than an etching resist layer formed by development. In the etching process, a method described in “Handbook of Printed Circuit Technology” (edited by Japan Printed Circuit Industry Association, published in 1987, published by Nikkan Kogyo Shimbun) can be used. The etching solution may be one that can dissolve and remove the metal layer, and at least the etching resist layer has resistance. In general, when copper is used for the metal layer, a ferric chloride aqueous solution, a cupric chloride aqueous solution, or the like can be used.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to this Example.

<Examples 1-7>
A heat-resistant silicone rubber lining is surface-treated on a glass substrate epoxy resin copper clad laminate (area 170 mm × 255 mm, copper foil thickness 12 μm, substrate thickness 0.1 mm, product name: CCL-E170, manufactured by Mitsubishi Gas Chemical Company). Using a laminator for dry film resist provided with a laminating roll, a dry film resist (trade name: trade name: roll temperature 100 ° C., air supply pressure 0.30 MPa, laminating speed 0.50 m / min, while removing the protective film. Sunfort, manufactured by Asahi Kasei E-Materials Co., Ltd.) was laminated to produce a workpiece. Next, the carrier film is peeled off, a thin film processing apparatus having three thin film processing units having a length of 1 m is used, a 10% sodium carbonate aqueous solution is used as the thin film processing liquid, and the dry film is processed at a processing speed of 5 to 8 m / min. The resist was thinned. The processing speed is set to 5 m / min or more in consideration of work efficiency, and the upper limit of the processing speed is that the photocrosslinkable resin component in the dry film resist is uniformly micelle, and the water washing process and the drying process are insufficient. 8 m / min was set as the upper limit speed for not becoming. The target for the thinning treatment was that the film thickness after the treatment was 10 μm. Table 1 shows which unit was used as the thinning treatment, the range of film thickness that can be thinned within a processing speed of 5 to 8 m / min, and the types of dry film resists that could be thinned to 10 μm. It was.

  As is clear from Table 1, in the thin film processing apparatus having three thin film processing units, Examples 1 to 3 in which thin film processing was performed by any one unit, thin film processing was performed by any two units. When Examples 4 to 6 and Example 7 in which thinning processing was performed in all units were combined, the range of film thickness that can be thinned was 10.1 to 48.6 μm. Therefore, it turns out that the kind of dry film resist which can be processed increases.

  On the other hand, when a thin film processing apparatus having one thin film processing unit having a length of 3 m is used as the thin film processing unit, the film thickness range that can be thinned is 30.4 to 48.6 μm. The initial film thickness of the dry film resist that can be processed is also limited to only 50 μm.

<Examples 8 to 19 and Comparative Examples 1 to 4>
Conditions that do not use a unit that is not used as a thin film processing unit (Examples 8 to 14), an unused thin film processing unit is used as a water washing processing unit, and the water washing processing unit is located upstream of the thin film processing unit. Conditions for use (Examples 15 to 19), using an unused thin film treatment unit as a water washing treatment unit, and conditions for using the water washing treatment unit downstream of the thin film treatment unit (Comparative Examples 1 to 4), The thinning process was performed so that the film thickness after the treatment was 10 μm at the dry film resist and the treatment speed shown in Table 2. Moreover, in order to confirm the effect of a water-washing process, the dispersion | variation in film thickness was measured by the method of the following description.

<Measurement method of film thickness variation>
After the thinning treatment, the film thickness of the dry film resist was measured at 40 points, and the variation in film thickness was evaluated by the value of standard deviation σ. The film thickness was measured by non-contact and non-destructive using a small high-resolution spectroscopic device (device name: SolidLambdaUV-NIR) manufactured by Spectra Corp. and calculated from reflectance spectroscopy.

  As is apparent from Table 2, when Examples 8 to 14 and Examples 15 to 19 are compared, an unused thinning unit is used as a water washing unit, and the water washing unit is upstream of the thinning unit. In Examples 15 to 19 used in Table 1, it can be seen that the film thickness variation after treatment is small, and that the film thickness reduction apparatus is excellent. This is because the hydrophilic group of the polymer present on the dry film resist surface is reoriented, the hydrophilicity is made uniform, and further, contaminants and foreign substances adhering to the dry film resist surface can be removed, leaving it thick. This is probably because a more uniform thinning process could be performed. In Comparative Examples 1 to 4 in which the water washing unit was used on the downstream side of the thinning unit, the film thickness after the treatment was not stable at all and could not be used as a dry film resist. This is presumably because the photocrosslinkable resin component in the dry film resist micelleized by the thinning unit was insufficiently removed by the water washing unit, and the uniformity after the thinning was significantly impaired.

  The present invention is widely used for forming a conductive pattern in a subtractive method, and can be used, for example, for producing a printed wiring board, a lead frame, and the like.

1 Thinning unit 1
2 Thin film processing unit 2
DESCRIPTION OF SYMBOLS 3 Introduction part 4 Work 5 Transport roll 6 Thinning processing nozzle 7 Washing processing nozzle 8 Storage tank 9 Thinning processing chemical pump 10 Water supply pipe 11 Thinning processing chemical recovery pipe 12 Waste liquid pipe 13 Valve

Claims (2)

  A dry film resist thinning apparatus having at least two continuous thinning units.   A dry thin film processing unit having at least two continuous thin film processing units, an unused thin film processing unit being changeable to a water washing processing unit, and using the water washing processing unit upstream of the thin film processing unit. Film resist thinning equipment.

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