TW201614364A - Binary photomask blank, preparation thereof, and preparation of binary photomask - Google Patents

Binary photomask blank, preparation thereof, and preparation of binary photomask

Info

Publication number
TW201614364A
TW201614364A TW104122539A TW104122539A TW201614364A TW 201614364 A TW201614364 A TW 201614364A TW 104122539 A TW104122539 A TW 104122539A TW 104122539 A TW104122539 A TW 104122539A TW 201614364 A TW201614364 A TW 201614364A
Authority
TW
Taiwan
Prior art keywords
preparation
binary photomask
light
shielding film
photomask blank
Prior art date
Application number
TW104122539A
Other languages
English (en)
Other versions
TWI609232B (zh
Inventor
Yukio Inazuki
Takuro Kosaka
Kazuhiro Nishikawa
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW201614364A publication Critical patent/TW201614364A/zh
Application granted granted Critical
Publication of TWI609232B publication Critical patent/TWI609232B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW104122539A 2014-07-15 2015-07-13 二元光罩坯料、其製造方法及二元光罩的製造方法 TWI609232B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014145039 2014-07-15
JP2015104399A JP6394496B2 (ja) 2014-07-15 2015-05-22 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW201614364A true TW201614364A (en) 2016-04-16
TWI609232B TWI609232B (zh) 2017-12-21

Family

ID=53525094

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104122539A TWI609232B (zh) 2014-07-15 2015-07-13 二元光罩坯料、其製造方法及二元光罩的製造方法

Country Status (6)

Country Link
US (1) US9651858B2 (zh)
EP (1) EP2975459B1 (zh)
JP (1) JP6394496B2 (zh)
KR (2) KR20160008970A (zh)
CN (1) CN105301890B (zh)
TW (1) TWI609232B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6400763B2 (ja) * 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP6932552B2 (ja) * 2017-05-31 2021-09-08 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
JP6866246B2 (ja) * 2017-06-30 2021-04-28 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JP2003195479A (ja) 2001-12-28 2003-07-09 Hoya Corp ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
KR20090105599A (ko) * 2008-04-03 2009-10-07 주식회사 하이닉스반도체 위상반전 마스크 및 그 제조 방법
TWI446103B (zh) * 2008-09-30 2014-07-21 Hoya Corp A mask substrate, a photomask and a method of manufacturing the same, and a method of manufacturing the semiconductor element
JP5317310B2 (ja) * 2009-03-31 2013-10-16 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
KR101812439B1 (ko) * 2009-07-16 2017-12-26 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 전사용 마스크의 제조 방법
US8435704B2 (en) * 2010-03-30 2013-05-07 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
JP5682493B2 (ja) * 2010-08-04 2015-03-11 信越化学工業株式会社 バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法
JP5154626B2 (ja) * 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5900773B2 (ja) * 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP5653888B2 (ja) * 2010-12-17 2015-01-14 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP5464186B2 (ja) * 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP6062195B2 (ja) * 2011-11-30 2017-01-18 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
KR101269062B1 (ko) * 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법

Also Published As

Publication number Publication date
US20160018729A1 (en) 2016-01-21
JP6394496B2 (ja) 2018-09-26
EP2975459B1 (en) 2020-10-21
KR20160008970A (ko) 2016-01-25
KR102181325B1 (ko) 2020-11-20
EP2975459A3 (en) 2016-06-29
TWI609232B (zh) 2017-12-21
JP2016029458A (ja) 2016-03-03
CN105301890B (zh) 2018-11-13
US9651858B2 (en) 2017-05-16
EP2975459A2 (en) 2016-01-20
KR20180037172A (ko) 2018-04-11
CN105301890A (zh) 2016-02-03

Similar Documents

Publication Publication Date Title
EP2871520A3 (en) Halftone phase shift photomask blank, halftone phase shift photomask and pattern exposure method
EP2983044A3 (en) Halftone phase shift photomask blank and making method
EP3079012A3 (en) Halftone phase shift mask blank and halftone phase shift mask
EP3139211A3 (en) Photomask blank
EP2881790A3 (en) Photomask blank
WO2019067928A3 (en) Structurally-colored articles and methods of making and using structurally-colored articles
SG10201801792VA (en) Halftone Phase Shift Photomask Blank
EP3139212A3 (en) Photomask blank
SG10201806936XA (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
TW201612352A (en) Method for hydrophobization of surface of silicon-containing film by ALD
TW201612012A (en) Display support substrate, color filter using the same and its manufacture method thereof, organic EL element and manufacture method thereof, and flexible organic EL display
EP3106920A4 (en) Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device
JP2015212826A5 (zh)
MX2016015556A (es) Pigmentos de efecto.
TW201614021A (en) Transparent adhesive sheet
TW200736819A (en) Four-gradation photomask manufacturing method and photomask blank for use therein
JP2008085312A5 (zh)
WO2016064860A3 (en) Composition for forming a patterned metal film on a substrate
SG10201804422VA (en) Photomask Blank and Making Method
TW201614364A (en) Binary photomask blank, preparation thereof, and preparation of binary photomask
MY181745A (en) Protective film, reflective member, and production method for protective film
SG11201907839RA (en) Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask
JP2017049312A5 (zh)
GB2555052A (en) Optical device having a hidden depiction
BR112017001320A2 (pt) artigos padronizados e método de revestimento de substratos com pelo menos um material de revestimento padronizado