TW201613153A - Resistive random access memory device and method for fabricating the same - Google Patents

Resistive random access memory device and method for fabricating the same

Info

Publication number
TW201613153A
TW201613153A TW103132925A TW103132925A TW201613153A TW 201613153 A TW201613153 A TW 201613153A TW 103132925 A TW103132925 A TW 103132925A TW 103132925 A TW103132925 A TW 103132925A TW 201613153 A TW201613153 A TW 201613153A
Authority
TW
Taiwan
Prior art keywords
memory device
random access
access memory
fabricating
resistive random
Prior art date
Application number
TW103132925A
Other languages
English (en)
Other versions
TWI543419B (zh
Inventor
Wen-Yueh Jang
Chia-Hua Ho
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW103132925A priority Critical patent/TWI543419B/zh
Priority to US14/861,242 priority patent/US9728720B2/en
Publication of TW201613153A publication Critical patent/TW201613153A/zh
Application granted granted Critical
Publication of TWI543419B publication Critical patent/TWI543419B/zh
Priority to US15/634,349 priority patent/US9966530B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
TW103132925A 2014-09-24 2014-09-24 電阻式非揮發性記憶體裝置及其製造方法 TWI543419B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW103132925A TWI543419B (zh) 2014-09-24 2014-09-24 電阻式非揮發性記憶體裝置及其製造方法
US14/861,242 US9728720B2 (en) 2014-09-24 2015-09-22 Resistive random access memory device and method for fabricating the same
US15/634,349 US9966530B2 (en) 2014-09-24 2017-06-27 Resistive random access memory device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103132925A TWI543419B (zh) 2014-09-24 2014-09-24 電阻式非揮發性記憶體裝置及其製造方法

Publications (2)

Publication Number Publication Date
TW201613153A true TW201613153A (en) 2016-04-01
TWI543419B TWI543419B (zh) 2016-07-21

Family

ID=55526558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103132925A TWI543419B (zh) 2014-09-24 2014-09-24 電阻式非揮發性記憶體裝置及其製造方法

Country Status (2)

Country Link
US (2) US9728720B2 (zh)
TW (1) TWI543419B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI602309B (zh) * 2016-07-26 2017-10-11 華邦電子股份有限公司 電容器結構及其製造方法
TWI610476B (zh) * 2017-03-16 2018-01-01 華邦電子股份有限公司 電阻式隨機存取記憶體結構及其形成方法
CN107808875A (zh) * 2016-09-08 2018-03-16 华邦电子股份有限公司 电容器结构及其制造方法
TWI624090B (zh) * 2017-06-15 2018-05-11 旺宏電子股份有限公司 電阻式隨機存取記憶體裝置及其製造方法
TWI653671B (zh) 2017-10-27 2019-03-11 華邦電子股份有限公司 電阻式記憶體及其製造方法與化學機械研磨製程
US10680173B2 (en) 2017-10-27 2020-06-09 Winbond Electronics Corp. Resistive memory, manufacturing method thereof and chemical mechanical polishing process

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107665945A (zh) * 2016-07-28 2018-02-06 中芯国际集成电路制造(上海)有限公司 一种阻变随机存储器及其制造方法
US10686014B2 (en) * 2018-06-26 2020-06-16 International Business Machines Corporation Semiconductor memory device having a vertical active region
US10903425B2 (en) * 2018-09-05 2021-01-26 International Business Machines Corporation Oxygen vacancy and filament-loss protection for resistive switching devices
CN111952445A (zh) * 2019-05-15 2020-11-17 中芯国际集成电路制造(上海)有限公司 阻变随机存取存储器的结构及其形成方法
TWI724441B (zh) * 2019-07-01 2021-04-11 華邦電子股份有限公司 電阻式隨機存取記憶體結構及其製造方法
CN110739395A (zh) * 2019-10-30 2020-01-31 上海华力微电子有限公司 阻变存储器及其制备方法
JP2021144968A (ja) * 2020-03-10 2021-09-24 キオクシア株式会社 記憶装置及び記憶装置の製造方法
CN115458679A (zh) * 2021-06-09 2022-12-09 联华电子股份有限公司 可变电阻式存储器装置及其形成方法
US11956975B2 (en) 2021-09-16 2024-04-09 International Business Machines Corporation BEOL fat wire level ground rule compatible embedded artificial intelligence integration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101524819B1 (ko) 2009-07-06 2015-06-02 삼성전자주식회사 비휘발성 메모리 장치
TWI412122B (zh) 2009-10-29 2013-10-11 Univ Nat Chiao Tung Resistive random access memory and its manufacturing method
KR101658492B1 (ko) * 2010-08-13 2016-09-21 삼성전자주식회사 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US8574983B2 (en) * 2011-05-13 2013-11-05 Intermolecular, Inc. Method for fabricating a DRAM capacitor having increased thermal and chemical stability
US8647943B2 (en) * 2012-06-12 2014-02-11 Intermolecular, Inc. Enhanced non-noble electrode layers for DRAM capacitor cell
EP2898551B1 (en) * 2012-09-21 2020-04-22 Merck Patent GmbH Organic semiconductor formulations
US9543375B2 (en) * 2014-06-27 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. MIM/RRAM structure with improved capacitance and reduced leakage current

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI602309B (zh) * 2016-07-26 2017-10-11 華邦電子股份有限公司 電容器結構及其製造方法
CN107808875A (zh) * 2016-09-08 2018-03-16 华邦电子股份有限公司 电容器结构及其制造方法
CN107808875B (zh) * 2016-09-08 2020-01-31 华邦电子股份有限公司 电容器结构及其制造方法
TWI610476B (zh) * 2017-03-16 2018-01-01 華邦電子股份有限公司 電阻式隨機存取記憶體結構及其形成方法
TWI624090B (zh) * 2017-06-15 2018-05-11 旺宏電子股份有限公司 電阻式隨機存取記憶體裝置及其製造方法
TWI653671B (zh) 2017-10-27 2019-03-11 華邦電子股份有限公司 電阻式記憶體及其製造方法與化學機械研磨製程
US10680173B2 (en) 2017-10-27 2020-06-09 Winbond Electronics Corp. Resistive memory, manufacturing method thereof and chemical mechanical polishing process

Also Published As

Publication number Publication date
TWI543419B (zh) 2016-07-21
US9728720B2 (en) 2017-08-08
US20160087199A1 (en) 2016-03-24
US9966530B2 (en) 2018-05-08
US20170294579A1 (en) 2017-10-12

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