TW201545379A - Light emitting diodes package structure for high-voltage power supply - Google Patents

Abstract

A light emitting diodes package structure for high-voltage power supply includes a metal substrate; an insulating layer arranged on the metal substrate and having a plurality of openings thereon to expose the metal substrate; a circuit layer arranged on the insulating layer; a plurality of LED chips respectively arranged on each opening, wherein the size of the each opening is a little smaller than the size of the each LED chip; a wire-bonding structure for electrically connecting the LED chips with each other in series and the circuit layer; and a dam structure arranged on the insulating layer and surrounding the LED chips and the wire-bonding structure; and the package material arranged inside the dam structure to cover the LED chips, the circuit layer and the wire-bonding structure.

Description

High-voltage power supply LED package structure

The present invention relates to a light emitting diode packaging technology, and more particularly to a high voltage power LED package structure.

In the development process of the light-emitting diode product, the heat dissipation problem is an important consideration. The substrate with high thermal conductivity is required to smoothly derive the heat generated by the light-emitting diode to ensure the service life of the light-emitting diode. In addition, the low-voltage and high-current power supply of the LEDs leads to high power costs. Only the development of high voltage and low current can reduce the power supply cost, and the power efficiency can be improved to further save energy.

However, under high voltage power, the generated current may be directly jumped from the gold wire or wafer to the metal substrate to cause a short circuit. Although the ceramic substrate is currently sufficiently insulating, the thermal conductivity is insufficient and the heat generated by the light-emitting diode cannot be derived. The metal substrate has sufficient thermal conductivity. In the state of high voltage, although there is silicone between the LEDs, the insulation of the silicone is insufficient, and there is still a jump condition that causes the LED products to be unable to withstand high voltage.

One of the objectives of the present invention is to provide a high-voltage power supply LED package structure. The insulating layer is provided on the insulating layer, and the opening is slightly smaller than the opening of the LED chip for mounting the LED chip thereon. Therefore, the problem of the short circuit of the high voltage generated by the high voltage can be effectively avoided and the high thermal conductivity of the metal substrate can be maintained.

The invention provides a high-voltage power supply LED package structure, comprising: a metal substrate; an insulating layer disposed on the metal substrate, wherein the insulating layer has a plurality of openings exposing the surface of the metal substrate; and a circuit layer is provided On the insulating layer, a plurality of light emitting diode chips are respectively disposed on the plurality of openings and fixed on the surface of the metal substrate, wherein the size of each of the plurality of openings is slightly smaller than the size of each of the plurality of light emitting diode chips a one-wire structure in which a plurality of light-emitting diode chips are connected in series and electrically connected to a circuit layer; a retaining wall structure is disposed on the insulating layer to surround the plurality of light-emitting diode chips and the wire-bonding structure; A packaging material is disposed in the retaining wall structure to cover a plurality of light emitting diode chips, a circuit layer and a wire bonding structure.

The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.

The detailed description is as follows, and the preferred embodiment is not intended to limit the invention.

Referring to FIG. 1 and FIG. 2 , in an embodiment, the high-voltage power LED package structure 100 of the present invention mainly includes a metal substrate 110 and an insulating layer 120 disposed on the metal substrate 110 . Wherein, the insulating layer 120 has a plurality of openings 122 exposing the surface of the metal substrate 110. A circuit layer 130 is disposed on the insulating layer 120.

Following the above description, the plurality of light-emitting diode chips 140 are respectively disposed on the openings 122 of the insulating layer 120, and the light-emitting diode wafers 140 are adhered and fixed to the surface of the metal substrate. The one-wire structure 150 is connected to the LED array 140 in series and electrically connected to the circuit layer 130 on the insulating layer 120. A retaining wall structure 160 is disposed on the insulating layer 120 for surrounding the LED wafer 140 and the wire bonding structure 150. An encapsulating material 170 is disposed in the retaining wall structure 160 to cover the LED array 140, the circuit layer 130 and the wire bonding structure 150.

In the present invention, as shown in FIG. 2, each opening 122 may be slightly smaller in size than each of the LED wafers 140 (FIG. 1). That is, the LED wafer 140 is disposed on the opening 122 of the insulating layer 120, and the LED wafer 140 is inseparable from the insulating layer 120. Therefore, even if the light-emitting diode package is subjected to a high-voltage power supply and a jumper is generated through the package material, the current does not penetrate the metal substrate and affect the product.

In one embodiment, circuit layer 130 is a patterned circuit. In one embodiment, a portion of the circuit layer 120 may be located within the retaining wall structure 160 on the insulating layer 120, and a portion of the circuit layer 120 may be located outside the retaining wall structure 160 on the insulating layer 120. In one embodiment, the circuit layer 130 of the present invention can be a circuit substrate having a patterned circuit thereon. The circuit board 122 can be a copper foil substrate, an insulating material substrate, a glass fiber substrate, a ceramic substrate, a glass fiber prepreg, a polymer material substrate or a flexible substrate.

With continued reference to FIG. 1, in one embodiment, the encapsulating material 170 is a phosphor powder.

Referring to FIG. 3 , in one embodiment, the high-voltage power LED package structure 100 of the present invention further includes a heat sink 180 disposed under the metal substrate 110 . In this manner, the metal substrate 110 can be thermally discharged and then dissipated by the heat sink 180. In an embodiment, the heat sink 180 can be a heat sink fin.

In summary, the high-voltage power supply LED package structure of the present invention is provided with an insulating layer on the metal substrate, and the insulating layer is disposed on the insulating layer to be slightly smaller than the opening of the LED substrate for mounting the LED chip thereon. Avoid the short circuit problem of high voltage generated by the high voltage and maintain the high thermal conductivity of the metal substrate. The invention can simultaneously solve the heat dissipation problem of the light emitting diode and avoid the short circuit short circuit problem of the high voltage power source product, and the invention can meet the requirements of the high voltage power source light emitting diode product.

The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the

100‧‧‧High-voltage power LED package structure
110‧‧‧Metal substrate
120‧‧‧Insulation
122‧‧‧ openings
130‧‧‧ circuit layer
140‧‧‧Light Emitting Diode Wafer
150‧‧‧Wire structure
160‧‧‧Retaining wall structure
170‧‧‧Packaging materials
180‧‧‧ Heat sink

Figure 1 is a schematic illustration of an embodiment of the invention.

2 is a schematic view of an embodiment of the present invention.

Figure 3 is a schematic illustration of an embodiment of the invention.

100‧‧‧High-voltage power LED package structure

110‧‧‧Metal substrate

120‧‧‧Insulation

122‧‧‧ openings

130‧‧‧ circuit layer

140‧‧‧Light Emitting Diode Wafer

150‧‧‧Wire structure

160‧‧‧Retaining wall structure

170‧‧‧Packaging materials

Claims (5)

A high-voltage power LED package structure includes: a metal substrate; an insulating layer disposed on the metal substrate, wherein the insulating layer has a plurality of openings to expose the surface of the metal substrate; On the insulating layer, a plurality of light-emitting diode chips are respectively disposed on the plurality of openings and fixed on the surface of the metal substrate, wherein each of the plurality of openings has a size slightly smaller than each of the plurality of light-emitting diodes The size of the polar body wafer is a wire-bonding structure in which the plurality of light-emitting diode chips are connected in series and electrically connected to the circuit layer; a retaining wall structure is disposed on the insulating layer to surround the plurality of light-emitting layers a diode chip and the wire bonding structure; and a packaging material covering the plurality of light emitting diode chips, the circuit layer and the wire bonding structure in the retaining wall structure. The high voltage power LED package structure according to claim 1, wherein the package material is a fluorescent powder. The high voltage power LED package structure of claim 1, wherein the circuit layer is a patterned circuit. The high-voltage power LED package structure according to claim 1, further comprising a heat dissipating member disposed under the metal substrate. The high voltage power LED package structure of claim 4, wherein the heat sink is a heat sink fin.