TWI495079B - Light-emitting module - Google Patents
Light-emitting module Download PDFInfo
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- TWI495079B TWI495079B TW101107468A TW101107468A TWI495079B TW I495079 B TWI495079 B TW I495079B TW 101107468 A TW101107468 A TW 101107468A TW 101107468 A TW101107468 A TW 101107468A TW I495079 B TWI495079 B TW I495079B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
本發明係有關於一種發光二極體封裝技術，特別是一種利用晶片直接封裝(chip on board，COB)技術製成可應用於發光二極體燈具之發光模組。The invention relates to a light emitting diode packaging technology, in particular to a light emitting module which can be applied to a light emitting diode lamp by using a chip on board (COB) technology.
發光二極體(light-emitting diodes，LED)因具有壽命長、省電、耐用等特點，因此LED已廣泛應用於照明裝置且深具產業價值。其中，LED的散熱一直都是攸關LED照明裝置的使用壽命的一個問題。一原因是當LED的接面溫度(junction temperature，Tj)升高時，會影響到LED的發光亮度，接面溫度若過高，易造成LED使用壽命減短與光衰減的問題，因此接面溫度最好保持在適當溫度下。一般高亮度LED燈具多是將發光模組，通常包含數個LED晶片封裝體，直接焊接在一般電路基板或鋁基板上，為了增加散熱效果，再額外設置散熱構件。LED的封裝結構必須要能具有快速且有效的散熱功能用以保持適當接面溫度。因此，除了散熱問題外，如何適時監控LED發光模組的接面溫度也就成為一個重要課題。Light-emitting diodes (LEDs) have long life, power saving, and durability. Therefore, LEDs have been widely used in lighting devices and have great industrial value. Among them, the heat dissipation of LEDs has always been a problem in the service life of LED lighting devices. One reason is that when the junction temperature (Tj) of the LED rises, it will affect the brightness of the LED. If the junction temperature is too high, it will easily cause the LED life shortening and light attenuation, so the junction The temperature is preferably maintained at an appropriate temperature. Generally, high-brightness LED lamps usually use a light-emitting module, which usually includes several LED chip packages, and is directly soldered on a general circuit substrate or an aluminum substrate. In order to increase the heat dissipation effect, an additional heat-dissipating member is additionally provided. The LED package must have a fast and efficient heat dissipation function to maintain proper junction temperature. Therefore, in addition to the heat dissipation problem, how to properly monitor the junction temperature of the LED lighting module becomes an important issue.
為了解決上述問題，本發明目的之一係提供一種發光模組，發光二極體晶片係設置於高導熱材質之板狀基材上，且板狀基材設置有一接面溫度測試部用以監測發光模組之接面溫度。In order to solve the above problems, an object of the present invention is to provide a light emitting module, wherein the light emitting diode chip is disposed on a plate-shaped substrate of a high thermal conductivity material, and the plate substrate is provided with a junction temperature test portion for monitoring The junction temperature of the light-emitting module.
為了達到上述目的，本發明一實施例之一種發光模組，係包括：一板狀基材，係具有多個晶片承載座突出於板狀基材與至少一接面溫度測試部設置於板狀基材之上表面，其中板狀基材之材質係為高導熱 材料；一電路基板，係直接疊置於板狀基材之上表面，其中電路基板對應設置多個開口以供多個晶片承載座貫穿且暴露出多個晶片承載座與接面溫度測試部；至少一個發光二極體晶片，係設置於每一晶片承載座上；多條導線，係電性連接每一發光二極體晶片與電路基板；以及一封裝材料，係分別覆蓋每一發光二極體晶片、每一晶片承載座、多條導線、與部分該電路基板。In order to achieve the above object, an illumination module according to an embodiment of the present invention includes: a plate-shaped substrate having a plurality of wafer carriers protruding from the plate-shaped substrate and at least one junction temperature test portion disposed on the plate shape The upper surface of the substrate, wherein the material of the plate substrate is high thermal conductivity a circuit substrate directly stacked on the upper surface of the plate substrate, wherein the circuit substrate is correspondingly provided with a plurality of openings for the plurality of wafer carriers to penetrate and expose the plurality of wafer carrier and junction temperature test portions; At least one light emitting diode chip is disposed on each of the wafer carriers; a plurality of wires electrically connecting each of the light emitting diode chips and the circuit substrate; and a packaging material covering each of the light emitting diodes The body wafer, each wafer carrier, a plurality of wires, and a portion of the circuit substrate.
以下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.
其詳細說明如下，所述較佳實施例僅做一說明非用以限定本發明。圖1A與圖1B為本發明一實施例之發光模組的示意圖。圖1B為圖1A中板狀基材10與電路基板20之俯視示意圖。The detailed description is as follows, and the preferred embodiment is not intended to limit the invention. 1A and 1B are schematic diagrams of a light emitting module according to an embodiment of the invention. 1B is a top plan view of the plate-like substrate 10 and the circuit substrate 20 of FIG. 1A.
於本實施例中，請參照圖1A與圖1B，本發明發光模組包括一板狀基材10。板狀基材10之上表面設置多個晶片承載座12與至少一接面溫度測試部14。一電路基板20直接疊置於板狀基材10之上表面。電路基板20具有多個開口22對應每一晶片承載座12與接面溫度測試部14設置並暴露出晶片承載座12與接面溫度測試部14。In this embodiment, referring to FIG. 1A and FIG. 1B, the light-emitting module of the present invention comprises a plate-shaped substrate 10. A plurality of wafer carriers 12 and at least one junction temperature test portion 14 are disposed on the upper surface of the plate substrate 10. A circuit substrate 20 is directly stacked on the upper surface of the plate-like substrate 10. The circuit substrate 20 has a plurality of openings 22 corresponding to each of the wafer carrier 12 and the junction temperature test portion 14 and exposes the wafer carrier 12 and the junction temperature test portion 14.
接續上述說明，每一晶片承載座12上均設置至少一LED晶片30於其上。LED晶片30與電路基板20係利用多個導線40來與電路基板20電性連接。封裝材料50係分別覆蓋每一LED晶片30、每一晶片承載座12、導線40與部分電路基板20以形成多個點封裝區域。熟知該項技藝者應能了解，於本實施例中，封裝材料50係構成多個點封裝區域。然而本發明並不限於此，封裝材料50亦可大面積覆蓋電路基板形成非點狀的封裝區塊。Following the above description, at least one LED chip 30 is disposed on each of the wafer carriers 12. The LED chip 30 and the circuit board 20 are electrically connected to the circuit board 20 by a plurality of wires 40. The encapsulation material 50 covers each of the LED wafers 30, each of the wafer carriers 12, the wires 40, and a portion of the circuit substrate 20 to form a plurality of dot package regions. It will be understood by those skilled in the art that in the present embodiment, the encapsulating material 50 constitutes a plurality of dot package regions. However, the present invention is not limited thereto, and the encapsulating material 50 may cover the circuit substrate over a large area to form a non-dot-shaped package block.
於本發明中，由於LED晶片30係直接設置於板狀基材10上，也因此LED晶片30所產生之熱量與接面溫度將直接反應於板狀基材10。因此，相同由板狀基材10所設置之接面溫度測試部14亦可同時反應出由LED晶片30所產生之熱量與接面溫度，藉由外部溫度量測裝置於接面溫度測試部14進行溫度量測進而監控發光模組內LED晶片30的接面溫度。此外，晶片承載座12與接面溫度測試部14可為相同結構。然而，本發明並不限於此，晶片承載座12與接面溫度測試部14亦可為相似或不同結構，但本體皆為板狀基材10。In the present invention, since the LED wafer 30 is directly disposed on the plate-like substrate 10, the heat generated by the LED chip 30 and the junction temperature are directly reflected in the plate-like substrate 10. Therefore, the junction temperature test portion 14 provided by the plate-like substrate 10 can simultaneously reflect the heat generated by the LED chip 30 and the junction temperature, and the junction temperature test portion 14 is provided by the external temperature measuring device. The temperature measurement is performed to monitor the junction temperature of the LED chip 30 in the light-emitting module. Further, the wafer carrier 12 and the junction temperature test portion 14 may have the same structure. However, the present invention is not limited thereto, and the wafer carrier 12 and the junction temperature test portion 14 may have similar or different structures, but the bodies are all plate-shaped substrates 10.
於上述實施例中，如圖1A與圖1B所示，晶片承載座12與接面溫度測試部14係突出於板狀基材10且開口22用以供晶片承載座12與接面溫度測試部14貫穿。於本實施例中，晶片承載座12與接面溫度測試部14之上表面係與電路基板20上表面同水平(如圖1A所示)。熟知該項技術者應能了解，本實施例中晶片承載座12與接面溫度測試部14之上表面係與電路基板20上表面同水平，然而實際於板狀基材10與電路基板20疊置製作的過程中晶片承載座12與接面溫度測試部14之上表面有可能是略為微凹的。可理解的，於不同實施例中，晶片承載座12與接面溫度測試部14之上表面係可以是凸出或高於對應電路基板20之表面，如3圖所示。更者，於不同實施例中，晶片承載座12與接面溫度測試部14之上表面係可以是低於出對應電路基板20之上表面，如4圖所示。又，於一實施例中，晶片承載座12與接面溫度測試部14之上表面可與電路基板20之下表面同水平，例如圖4揭示接面溫度測試部14之上表面與電路基板20之下表面同水平。In the above embodiment, as shown in FIG. 1A and FIG. 1B, the wafer carrier 12 and the junction temperature test portion 14 protrude from the plate substrate 10 and the opening 22 is used for the wafer carrier 12 and the junction temperature test portion. 14 runs through. In the present embodiment, the upper surface of the wafer carrier 12 and the junction temperature test portion 14 is at the same level as the upper surface of the circuit substrate 20 (as shown in FIG. 1A). It should be understood by those skilled in the art that in the present embodiment, the upper surface of the wafer carrier 12 and the junction temperature test portion 14 are at the same level as the upper surface of the circuit substrate 20, but the plate substrate 10 and the circuit substrate 20 are actually stacked. During the fabrication process, the upper surface of the wafer carrier 12 and the junction temperature test portion 14 may be slightly dimpled. It can be understood that in different embodiments, the upper surface of the wafer carrier 12 and the junction temperature test portion 14 may be convex or higher than the surface of the corresponding circuit substrate 20, as shown in FIG. Moreover, in different embodiments, the upper surface of the wafer carrier 12 and the junction temperature test portion 14 may be lower than the upper surface of the corresponding circuit substrate 20, as shown in FIG. Moreover, in an embodiment, the upper surface of the wafer carrier 12 and the junction temperature test portion 14 may be level with the lower surface of the circuit substrate 20. For example, FIG. 4 discloses the upper surface of the junction temperature test portion 14 and the circuit substrate 20. The surface below is the same level.
請參考圖2A與圖2B，其中圖2B為圖2A中板狀基材10、電路基板20與感溫膜60之俯視示意圖。於一實施例，本發明的接面溫度測試部14可設置於晶片承載座12的中間。如此，接面溫度測試部14可更快反應周圍溫度狀況。然而，本發明並不限於接面溫度測試部14的數量、位置與形狀。接面溫度測試部14可以是多個設置於不同區域，可讓設計者依發光模組之需求設計。更進一步，於一實施例中，可於接面溫度測試部14上設置一感溫膜60，如圖2A、圖2B與圖3所示，如此感溫膜60可依溫度變化進而改變顏色達到即時監控與警示溫度的功能。Please refer to FIG. 2A and FIG. 2B , wherein FIG. 2B is a top plan view of the plate substrate 10 , the circuit substrate 20 and the temperature sensing film 60 of FIG. 2A . In one embodiment, the junction temperature test portion 14 of the present invention can be disposed in the middle of the wafer carrier 12. Thus, the junction temperature test portion 14 can react to the ambient temperature condition more quickly. However, the present invention is not limited to the number, position and shape of the junction temperature test portion 14. The junction temperature test portion 14 can be disposed in a plurality of different regions, and can be designed by the designer according to the requirements of the light-emitting module. Further, in an embodiment, a temperature sensing film 60 can be disposed on the junction temperature testing portion 14, as shown in FIG. 2A, FIG. 2B and FIG. 3, so that the temperature sensing film 60 can change color according to temperature changes. Instant monitoring and warning of temperature.
本發明的板狀基材10係為高導熱材質，例如金屬板。因此，於本發明中，接面溫度測試部14可確實反應出發光模組中LED晶片30所產生的熱量與接面溫度。於一實施例中，電路基板20可為印刷電路板。於一實施例中，電路基板20可包含由底部絕緣層、線路層與防焊層所組成。The plate-like substrate 10 of the present invention is a highly thermally conductive material such as a metal plate. Therefore, in the present invention, the junction temperature test portion 14 can surely reflect the heat generated by the LED chip 30 in the light-emitting module and the junction temperature. In an embodiment, the circuit substrate 20 can be a printed circuit board. In an embodiment, the circuit substrate 20 may include a bottom insulating layer, a wiring layer, and a solder resist layer.
於上述實施例中，熟知該項技術領域的人應可了解，晶片承載座12或LED晶片30設置之密度可依照不同光源需求進行設計。另外，於本發明中，發光模組中可將控制晶片整合於其內。如此，發光模組同時具有發光單元與控制單元，可有效減少燈具產品的組裝構件與組裝工序及成本。同時，控制晶片運作亦會產生熱量，熱量累積不散也容易降低產品使用壽命。本發明發光模組之晶片均設置於高導熱材料之板狀基材上故散熱效果優良，可同時克服發光二極體晶片或控制晶片散熱問題。In the above embodiments, those skilled in the art should understand that the density of the wafer carrier 12 or the LED chip 30 can be designed according to different light source requirements. In addition, in the present invention, the control chip can be integrated therein in the light emitting module. In this way, the light-emitting module has both the light-emitting unit and the control unit, which can effectively reduce the assembly components and assembly processes and costs of the lamp product. At the same time, controlling the operation of the wafer also generates heat, and the accumulation of heat does not easily reduce the service life of the product. The wafers of the light-emitting module of the invention are all disposed on the plate-shaped substrate of the high thermal conductive material, so that the heat dissipation effect is excellent, and the heat dissipation problem of the light-emitting diode wafer or the control wafer can be overcome at the same time.
請參照圖4，於本實施例中，控制晶片30’可設置於一控制晶片承載座12’上並與電路基板20透過導線40’與電路基板20電性連接。其中，如同前述之晶片承載座12，控制晶片承載座12’可水平或突出設置於板狀基材10之表面。當然，控制晶片承載座12’之上表面可如同晶片承載座12般，同水平或凸出於對應電路基板20的表面。其中，控制晶片30’之封裝結構與LED晶片30類似，於此不再贅述。Referring to FIG. 4, in the embodiment, the control wafer 30' can be disposed on a control wafer carrier 12' and electrically connected to the circuit substrate 20 through the wire 40'. Here, as with the wafer carrier 12 described above, the control wafer carrier 12' may be horizontally or protrudedly disposed on the surface of the plate substrate 10. Of course, the upper surface of the control wafer carrier 12' may be the same level or protruded from the surface of the corresponding circuit substrate 20 as the wafer carrier 12. The package structure of the control wafer 30' is similar to that of the LED chip 30, and details are not described herein.
於本發明中，無論是晶片或是電路基板內線路所產生熱量，板狀基材與散熱件都能提供直接散熱效果，更重要的是在無需改變整體封裝結構之架構下，本發明的發光模組可提供接面溫度測試部供確實反應出發光模組中LED晶片所產生的熱量與接面溫度。於本發明，並不限定晶片承載座或接面溫度測試部設置於板狀基材之位置，可依不同設計進行設置。接面溫度測試部可藉由外部量測得知溫度，或者亦可於接面溫度測試部上設置感溫膜來隨時掌握發光模組之溫度變化。另外，可理解的是，於本發明中，晶片的設置需要黏著固定於晶片承載座，且板狀基材與電路基板間係電性隔絕的，所使用的材料技術為一般技術者所熟知的，於此不再進一步說明。另外，本發明並不限電路基板是否完全覆蓋板狀基材，板狀基材之尺寸可大於電路基板。In the present invention, the plate substrate and the heat sink can provide direct heat dissipation effect regardless of the heat generated by the circuit in the wafer or the circuit substrate, and more importantly, the light of the present invention can be realized without changing the structure of the overall package structure. The module can provide a junction temperature test portion for reliably reflecting the heat generated by the LED chip in the light-emitting module and the junction temperature. In the present invention, the position where the wafer carrier or the junction temperature test portion is disposed on the plate substrate is not limited, and may be set according to different designs. The junction temperature test section can determine the temperature by external measurement, or can also set the temperature sensing film on the junction temperature test section to grasp the temperature change of the illumination module at any time. In addition, it can be understood that, in the present invention, the arrangement of the wafer needs to be adhesively fixed to the wafer carrier, and the plate substrate is electrically isolated from the circuit substrate, and the material technology used is well known to those skilled in the art. This will not be further explained here. In addition, the present invention does not limit whether the circuit substrate completely covers the plate-shaped substrate, and the size of the plate-shaped substrate may be larger than that of the circuit substrate.
綜合上述，本發明藉由將電路基板直接覆蓋板狀基材之一表面，電路基板與LED晶片可直接向板狀基材方向散熱，更藉由在板狀基材同時設置接面溫度測試部可作為溫度監控量測之用。故，本發明發光模組可於封裝過程中同時完成接面溫度測試部的製作，無須額外增加製程工序或材料成本。In summary, the present invention directly covers the surface of one of the plate-shaped substrates by the circuit substrate, and the circuit substrate and the LED chip can be directly radiated toward the plate-like substrate, and the junction temperature test portion is simultaneously provided on the plate-shaped substrate. Can be used as a temperature monitoring measurement. Therefore, the light-emitting module of the present invention can simultaneously complete the fabrication of the junction temperature test portion in the packaging process without additional process steps or material costs.
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
10．．．板狀基材10. . . Plate substrate
12．．．晶片承載座12. . . Wafer carrier
14．．．接面溫度測試部14. . . Joint temperature test department
12’．．．控制晶片承載座12’. . . Control wafer carrier
20．．．電路基板20. . . Circuit substrate
22．．．開口twenty two. . . Opening
30．．．LED晶片30. . . LED chip
30’．．．控制晶片30’. . . Control chip
40．．．導線40. . . wire
40’．．．導線40’. . . wire
50．．．封裝材料50. . . Packaging material
60．．．感溫膜60. . . Temperature film
圖1A與圖1B為本發明一實施例之示意圖。1A and 1B are schematic views of an embodiment of the present invention.
圖2A與圖2B為本發明一實施例之示意圖。2A and 2B are schematic views of an embodiment of the present invention.
圖3為本發明一實施例之示意圖。Figure 3 is a schematic illustration of an embodiment of the invention.
圖4為本發明一實施例之示意圖。Figure 4 is a schematic illustration of an embodiment of the invention.
10．．．板狀基材10. . . Plate substrate
12．．．晶片承載座12. . . Wafer carrier
14．．．接面溫度測試部14. . . Joint temperature test department
20．．．電路基板20. . . Circuit substrate
22．．．開口twenty two. . . Opening
30．．．LED晶片30. . . LED chip
40．．．導線40. . . wire
50．．．封裝材料50. . . Packaging material
Claims (8)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101107468A TWI495079B (en) | 2012-03-06 | 2012-03-06 | Light-emitting module |
| CN2013100014531A CN103311403A (en) | 2012-03-06 | 2013-01-04 | Light emitting module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101107468A TWI495079B (en) | 2012-03-06 | 2012-03-06 | Light-emitting module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201338127A TW201338127A (en) | 2013-09-16 |
| TWI495079B true TWI495079B (en) | 2015-08-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101107468A TWI495079B (en) | 2012-03-06 | 2012-03-06 | Light-emitting module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103311403A (en) |
| TW (1) | TWI495079B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110731008B (en) * | 2019-09-12 | 2021-06-08 | 长江存储科技有限责任公司 | Electronic component comprising a substrate with a thermal indicator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04102365A (en) * | 1990-08-22 | 1992-04-03 | Nec Corp | Diode |
| CN101630678B (en) * | 2008-07-16 | 2011-10-05 | 恩纳特隆公司 | Luminous device and method for manufacturing same |
| EP2392903A2 (en) * | 2010-06-04 | 2011-12-07 | Tyco Electronics Corporation | Temperature Measurement System For A Light Emitting Diode (LED) Assembly |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4045781B2 (en) * | 2001-08-28 | 2008-02-13 | 松下電工株式会社 | Light emitting device |
| EP1662583B1 (en) * | 2003-07-28 | 2018-11-07 | Nichia Corporation | Light-emitting apparatus, led illumination, led light-emitting apparatus, and method of controlling light-emitting apparatus |
| CN101749567B (en) * | 2008-12-16 | 2012-03-28 | 比亚迪股份有限公司 | LED system |
| CN102042568A (en) * | 2009-10-16 | 2011-05-04 | 新日兴股份有限公司 | Light-emitting diode (LED) packaging structure with composite structure substrate |
| CN101749626B (en) * | 2010-01-22 | 2014-10-01 | 深圳市中庆微科技开发有限公司 | Light emitting diode (LED) automobile lighting lamp |
| CN201766098U (en) * | 2010-08-19 | 2011-03-16 | 浙江大学 | Zero thermal resistance structure of high-power LED (light-emitting diode) and radiator and LED lamp |
-
2012
- 2012-03-06 TW TW101107468A patent/TWI495079B/en active
-
2013
- 2013-01-04 CN CN2013100014531A patent/CN103311403A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04102365A (en) * | 1990-08-22 | 1992-04-03 | Nec Corp | Diode |
| CN101630678B (en) * | 2008-07-16 | 2011-10-05 | 恩纳特隆公司 | Luminous device and method for manufacturing same |
| EP2392903A2 (en) * | 2010-06-04 | 2011-12-07 | Tyco Electronics Corporation | Temperature Measurement System For A Light Emitting Diode (LED) Assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103311403A (en) | 2013-09-18 |
| TW201338127A (en) | 2013-09-16 |
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