CN102856470A - LED (Light Emitting Diode) chip encapsulating substrate structure - Google Patents
LED (Light Emitting Diode) chip encapsulating substrate structure Download PDFInfo
- Publication number
- CN102856470A CN102856470A CN2012101164809A CN201210116480A CN102856470A CN 102856470 A CN102856470 A CN 102856470A CN 2012101164809 A CN2012101164809 A CN 2012101164809A CN 201210116480 A CN201210116480 A CN 201210116480A CN 102856470 A CN102856470 A CN 102856470A
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- led
- copper alloy
- alloy panel
- chip
- tungsten
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention relates to an LED (Light Emitting Diode) chip encapsulating substrate structure. The existing LED chip encapsulation technology mainly adopts a concave copper substrate which is covered by a colloid so that the surface is flush with the peripheral copper substrate, a part of light is blocked by the colloid and the substrate material, heat cannot be quickly transferred to the outside, the color temperature quality decreases, and chip aging is quickened. According to the invention, a tungsten copper alloy panel is inserted in the surface of the oxygen-free copper substrate, an array boss is arranged on the surface of the tungsten copper alloy panel, and an LED bare-chip is arranged on the top surface of the array boss; a circuit layer is arranged at the lower part of the boss on the surface of the tungsten copper alloy panel; a micron-sized ultrathin ceramic insulation layer is sandwiched between the tungsten copper alloy panel and the circuit layer; and an encapsulating colloid lens is sleeved outside the LED bare-chip. According to the scheme provided by the invention, the LED chip is higher than the circuit layer and is provided with the colloid lens which covers the LED chip, thereby effectively dispersing light at the maximal angle; and through combination of the oxygen-free copper substrate and the tungsten copper alloy panel, the heat dissipation efficiency is effectively improved, and the service life is prolonged.
Description
Technical field
The invention belongs to the LED technical field of lamps, be specifically related to a kind of led chip package substrate construction.
Background technology
Light-emitting diodes degree pipe LED has few, photochromic pure, all solid state, a series of advantages such as quality is light, volume is little, environmental protection of power consumption as new generation of green environment protection solid lighting source.LED bare chip technology has two kinds of principal modes: a kind of COB of being technology, another kind is flip chip technology.At present the substrate of LED mainly is divided into two kinds of aluminium base and copper bases, and in the COB technology, often adopt copper base as the mainboard material of led chip, copper base is the most expensive a kind of in the metal substrate, and radiating effect is all got well doubly a lot than aluminium base and iron substrate, be applicable to special product and industry.Turmeric copper base, silver-plated copper substrate, spray tin copper base, anti-oxidant copper base etc. are generally arranged.When using copper base to carry out packaging LED chips, present technology is to adopt the matrix copper base, and namely the LED die package and covers with colloid and makes the surface equal with the copper base of periphery in the Baltimore groove of copper base.Like this meeting of doing so that the part light of LED stopped by colloid and substrate sheet material, can't bring into play the maximum light efficiency of LED, also can't be fast the heat of led chip be passed, cause the photon of chip outgoing to reduce, the colour temperature Quality Down is accelerated chip aging, shortens the serious consequences such as device lifetime.
Summary of the invention
The purpose of this invention is to provide and a kind ofly can be fast the temperature of led chip be passed, prolongs the device led chip package substrate construction in useful life.
The technical solution adopted in the present invention is:
A kind of led chip package substrate construction is provided with oxygen-free copper substrate, it is characterized in that:
Described oxygen-free copper substrate surface is embedded with the tungsten-copper alloy panel, and tungsten-copper alloy panel surface arranges the array boss, and array boss end face is provided with the LED nude film;
The boss platform bottom on tungsten-copper alloy panel surface is divided and is provided with circuit layer, adopts gold thread that the PN junction of LED nude film is communicated on the circuit layer.
Be folded with micron-sized ultra-thin ceramic insulating barrier between described tungsten-copper alloy panel and the circuit layer.
Described LED nude film is covered with the packing colloid lens outward.
The present invention has the following advantages:
The present invention adopts the mode of boss packaging heat sink material to carry led chip at substrate, makes led chip exceed circuit layer, is equipped with the colloid lens again and covers led chip, effectively light is exhaled to maximum angle.Substrate master material of the present invention adopts has good thermal conductivity and corrosion proof oxygen-free copper; Be equipped with the packaging heat sink material of tungsten-copper alloy, this material has the thermal coefficient of expansion that is complementary with semi-conducting material and good electrical and thermal conductivity, when can guarantee to dispel the heat, can prevent that again chip from causing fatigue failure because expanding with heat and contract with cold, guarantee the extra long life of LED.
Description of drawings
Fig. 1 is structure chart of the present invention.
Among the figure, 1-oxygen-free copper substrate, 2-tungsten-copper alloy panel, 3-ultra-thin ceramic insulating barrier, 4-circuit layer, 5-LED nude film, 6-packing colloid lens.
Embodiment
The present invention will be described in detail below in conjunction with embodiment.
A kind of led chip package substrate construction that the present invention relates to, be provided with oxygen-free copper substrate 1, oxygen-free copper substrate 1 surface is provided with recessed mounting groove, is embedded with tungsten-copper alloy panel 2 in the groove, the conductive coefficient that requires tungsten-copper alloy panel 2 greater than 200W/mk, thermal coefficient of expansion less than 6 * 10
-6M/k.Tungsten-copper alloy panel 2 surfaces arrange the array boss, array boss end face is provided with LED nude film 5, the boss platform bottom on tungsten-copper alloy panel 2 surfaces is divided and is provided with circuit layer 4, use gold thread that the PN junction of LED nude film 5 is communicated on the circuit layer 4, form the structure that LED nude film 5 is higher than substrate, can make LED light more effectively exhale, improve illumination brightness.The LED nude film 5 outer packing colloid lens 6 that are covered with hemisphere cover shape make illumination softer.Be folded with micron-sized ultra-thin ceramic insulating barrier 3 between tungsten-copper alloy panel 2 and the circuit layer 4, the scope that requires the conductive coefficient of ultra-thin ceramic insulating barrier 3 is 25-170W/mk, and puncture voltage can realize insulation function greater than 14KV, can improve radiating efficiency again.
Claims (3)
1. a led chip package substrate construction is provided with oxygen-free copper substrate (1), it is characterized in that:
Described oxygen-free copper substrate (1) surface is embedded with tungsten-copper alloy panel (2), and tungsten-copper alloy panel (2) surface arranges the array boss, and array boss end face is provided with LED nude film (5);
The boss platform bottom on tungsten-copper alloy panel (2) surface is divided and is provided with circuit layer (4), adopts gold thread that the PN junction of LED nude film (5) is communicated on the circuit layer (4).
2. led chip package substrate construction according to claim 1 is characterized in that:
Be folded with micron-sized ultra-thin ceramic insulating barrier (3) between described tungsten-copper alloy panel (2) and the circuit layer (4).
3. led chip package substrate construction according to claim 1 and 2 is characterized in that:
The outer packing colloid lens (6) that are covered with of described LED nude film (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101164809A CN102856470A (en) | 2012-04-20 | 2012-04-20 | LED (Light Emitting Diode) chip encapsulating substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101164809A CN102856470A (en) | 2012-04-20 | 2012-04-20 | LED (Light Emitting Diode) chip encapsulating substrate structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102856470A true CN102856470A (en) | 2013-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101164809A Pending CN102856470A (en) | 2012-04-20 | 2012-04-20 | LED (Light Emitting Diode) chip encapsulating substrate structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN102856470A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298321A (en) * | 2013-06-24 | 2013-09-11 | 江西量一光电科技有限公司 | Tungsten-copper alloy and graphite composite cooling fin and production method thereof |
| CN103702515A (en) * | 2013-12-26 | 2014-04-02 | 广州市德晟照明实业有限公司 | High-power LED (light emitting diode) lamp bead metal substrate structure and manufacturing method thereof |
| CN110504245A (en) * | 2018-05-18 | 2019-11-26 | 深圳市聚飞光电股份有限公司 | Convex substrate LED and light emitting device |
| CN114706172A (en) * | 2022-02-25 | 2022-07-05 | 武汉光迅科技股份有限公司 | Eight-channel optical transceiver module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050214979A1 (en) * | 2004-03-25 | 2005-09-29 | Yamaha Corporation | Semiconductor package and method for manufacturing the same |
| US20080019133A1 (en) * | 2005-07-15 | 2008-01-24 | Korea Photonics Technology Institute | High power light-emitting diode package comprising substrate having beacon |
| CN101752354A (en) * | 2009-12-18 | 2010-06-23 | 中山大学 | Packaging substrate structure for LED and production method thereof |
| CN202009035U (en) * | 2011-03-30 | 2011-10-12 | 铜陵科海光电技术有限公司 | Wide-angle LED packaging device |
| CN202513203U (en) * | 2012-04-20 | 2012-10-31 | 陕西唐华能源有限公司 | Packaging substrate structure for light-emitting diode (LED) chip |
-
2012
- 2012-04-20 CN CN2012101164809A patent/CN102856470A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050214979A1 (en) * | 2004-03-25 | 2005-09-29 | Yamaha Corporation | Semiconductor package and method for manufacturing the same |
| US20080019133A1 (en) * | 2005-07-15 | 2008-01-24 | Korea Photonics Technology Institute | High power light-emitting diode package comprising substrate having beacon |
| CN101752354A (en) * | 2009-12-18 | 2010-06-23 | 中山大学 | Packaging substrate structure for LED and production method thereof |
| CN202009035U (en) * | 2011-03-30 | 2011-10-12 | 铜陵科海光电技术有限公司 | Wide-angle LED packaging device |
| CN202513203U (en) * | 2012-04-20 | 2012-10-31 | 陕西唐华能源有限公司 | Packaging substrate structure for light-emitting diode (LED) chip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298321A (en) * | 2013-06-24 | 2013-09-11 | 江西量一光电科技有限公司 | Tungsten-copper alloy and graphite composite cooling fin and production method thereof |
| CN103702515A (en) * | 2013-12-26 | 2014-04-02 | 广州市德晟照明实业有限公司 | High-power LED (light emitting diode) lamp bead metal substrate structure and manufacturing method thereof |
| CN110504245A (en) * | 2018-05-18 | 2019-11-26 | 深圳市聚飞光电股份有限公司 | Convex substrate LED and light emitting device |
| CN114706172A (en) * | 2022-02-25 | 2022-07-05 | 武汉光迅科技股份有限公司 | Eight-channel optical transceiver module |
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Application publication date: 20130102 |