TW201539154A - Substrate-processing apparatus, device manufacturing method, and method for adjusting substrate-processing apparatus - Google Patents

Substrate-processing apparatus, device manufacturing method, and method for adjusting substrate-processing apparatus Download PDF

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TW201539154A
TW201539154A TW104110607A TW104110607A TW201539154A TW 201539154 A TW201539154 A TW 201539154A TW 104110607 A TW104110607 A TW 104110607A TW 104110607 A TW104110607 A TW 104110607A TW 201539154 A TW201539154 A TW 201539154A
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substrate
light
line
processing apparatus
light beam
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TW104110607A
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TWI640835B (en
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加藤正紀
奈良奎
鈴木智也
渡邊智行
鬼頭義昭
堀正和
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尼康股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70025Production of exposure light, i.e. light sources by lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70681Metrology strategies
    • G03F7/70683Mark designs
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706851Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825Mounting of individual elements, e.g. mounts, holders or supports
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

In this substrate-processing apparatus, a plurality of patterning units are arrayed in the widthwise direction of a substrate such that movement in the lengthwise direction of the substrate causes patterns formed on the substrate by pattern lines from the respective patterning units to join together. Each patterning unit is provided with a reflected-light detection unit for a measuring device, and when said reflected-light detection units detect reflected light reflected by the substrate or a support surface of a support member due to the projection of a light spot from a beam, the alignment relationships of the pattern lines are measured on the basis of signals outputted by each reflected-light detection unit when a fiducial mark on the support member is located above the pattern line from the corresponding patterning unit.

Description

基板處理裝置、元件製造方法及基板處理裝置之調整方法 Substrate processing apparatus, component manufacturing method, and adjustment method of substrate processing apparatus

本發明係關於基板處理裝置、元件製造方法、基板處理裝置之調整方法。 The present invention relates to a substrate processing apparatus, a device manufacturing method, and a method of adjusting a substrate processing apparatus.

作為習知基板處理裝置,有一種在片狀媒體(基板)上之既定位置進行描繪的製造裝置廣為人知(例如,參照專利文獻1)。專利文獻1中記載之製造裝置,係對於寬度方向易伸縮之可撓性長條片狀基板,藉檢測對準標記以測量片狀基板之伸縮,依據伸縮修正描繪位置(加工位置)。 As a conventional substrate processing apparatus, a manufacturing apparatus that draws at a predetermined position on a sheet medium (substrate) is widely known (for example, refer to Patent Document 1). In the manufacturing apparatus described in Patent Document 1, the flexible long strip-shaped substrate which is easy to expand and contract in the width direction is used to measure the expansion and contraction of the sheet-like substrate by detecting the alignment mark, and the drawing position (machining position) is corrected in accordance with the expansion and contraction.

先行技術文獻Advanced technical literature

[專利文獻1]日本特開2010-91990號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-91990

於專利文獻1之製造裝置,係藉由一邊將基板往搬送方向搬送、一邊切換空間調變元件(DMD:Digital Micro mirror Device)據以進行曝光,以複數個描繪單元將圖案描繪於基板。於專利文獻1之製造裝置,雖係將於基板之寬度方向相鄰之圖案彼此以複數個描繪單元加以接合曝光,但為抑制接合曝光之誤差,係反饋(feedback)進行測試(test)曝光 與顯影所生成之在接合部之圖案之位置誤差的測量結果。然而,包含此種測試曝光、顯影、測量等作業之反饋步驟,雖亦視其頻度,但卻得暫時停止製造線,不僅降低製品之生產性、亦有可能產生基板之浪費。 In the manufacturing apparatus of the patent document 1, the spatial modulation mirror (DMD: Digital Micro mirror Device) is switched by the substrate in the conveyance direction, and the pattern is drawn on the substrate by a plurality of drawing units. In the manufacturing apparatus of Patent Document 1, the patterns adjacent to each other in the width direction of the substrate are joined and exposed by a plurality of drawing units. However, in order to suppress the error of the bonding exposure, feedback is performed for test exposure. A measurement result of a positional error with the pattern of the joint formed by the development. However, the feedback step including such test exposure, development, measurement, and the like, although depending on the frequency, has to temporarily stop the manufacturing line, which not only reduces the productivity of the product, but also causes waste of the substrate.

本發明之態樣係有鑑於上述課題而生,其目的在提供一種即使是使用複數個描繪單元於基板之寬度方向接合圖案以進行曝光(描繪)之情形時,亦能降低圖案彼此之接合誤差,而能於基板高精度安定的描繪大面積圖案之基板處理裝置、元件製造方法及基板處理裝置之調整方法。 The present invention has been made in view of the above problems, and an object of the invention is to provide a method for reducing the bonding error of patterns even when a plurality of drawing units are used to bond patterns in the width direction of the substrate for exposure (drawing). Further, a substrate processing apparatus, a device manufacturing method, and a substrate processing apparatus for drawing a large-area pattern capable of high-precision stability of a substrate can be used.

本發明第1態樣,係一種基板處理裝置,具備:支承構件,具有支承長條片狀基板之支承面,在與該基板之長條方向交叉之寬度方向之該支承面上之複數位置設有基準標記;搬送裝置,使被該支承構件支承之該基板往該長條方向移動;描繪裝置,包含可對以該支承面支承之該基板或該支承面一邊投射光束之點光、一邊於較該基板寬度方向之尺寸窄之範圍掃描並沿著以該掃描所得之描繪線描繪既定圖案之複數個描繪單元,以該複數個描繪單元之各描繪線描繪於該基板上之圖案彼此隨著該基板往長條方向之移動而於該基板之寬度方向接合之方式,將該複數個描繪單元配置於該基板之寬度方向;反射光檢測部,設於該複數個描繪單元之各個,用以檢測因該光束之點光之投射而從該支承構件之支承面或該基板反射之反射光;以及測量裝置,係根據在該支承構件之基準標記位於該複數個描繪單元各個之該描繪線上時從該反射光檢測部輸出之訊號,測量該複數個描繪線之配置關係。 According to a first aspect of the present invention, a substrate processing apparatus includes: a support member having a support surface for supporting a long sheet-like substrate, and a plurality of positions on the support surface in a width direction intersecting a longitudinal direction of the substrate; a reference mark; a transfer device that moves the substrate supported by the support member in the strip direction; and the drawing device includes a spot light that can project a light beam to the substrate or the support surface supported by the support surface a plurality of drawing units that scan a predetermined pattern in a range narrower than a dimension in the width direction of the substrate, and the patterns drawn on the substrate by the respective drawing lines of the plurality of drawing units follow each other The plurality of drawing units are disposed in a width direction of the substrate so that the substrate is moved in a strip direction and joined in a width direction of the substrate; and the reflected light detecting unit is provided in each of the plurality of drawing units for Detecting reflected light reflected from a support surface of the support member or the substrate due to projection of the spot light of the light beam; and measuring means according to the support structure The reference mark is output from the reflected light detecting unit when the reference mark is located on the drawing line of each of the plurality of drawing units, and the arrangement relationship of the plurality of drawing lines is measured.

本發明第2態樣,提供一種使用本發明第1態樣之基板處理 裝置以將該圖案形成於該基板之元件製造方法。 According to a second aspect of the present invention, there is provided a substrate treatment using the first aspect of the present invention. The device is a device manufacturing method in which the pattern is formed on the substrate.

本發明第3態樣,係一種基板處理裝置之調整方法,此基板處理裝置具備:支承構件,其於支承面上預先決定之複數個位置具備離散或連續之特定的基準標記;搬送裝置,一邊於該支承構件之支承面支承既定寬之基板、一邊將該基板往與該寬度方向交叉之長條方向以既定速度加以搬送;描繪裝置,具備可沿著將投射於該基板之光束之點光在較該基板寬度寬度窄之範圍於該寬度方向掃描所得之描繪線、將既定圖案描繪於該基板上的複數個描繪單元,以藉由該複數個描繪單元之各個描繪於該基板上之圖案彼此隨著該基板往該長條方向之搬送而在該基板之寬度方向接合之方式,將彼此於該寬度方向相鄰之該描繪線於該長條方向以既定間隔分離配置;以及複數個反射光檢測部,用以檢測因來自該複數個描繪單元之各個之該光束之照射而從該支承構件之支承面產生之反射光;其特徵在於,包含:使該支承構件與該描繪裝置相對移動,以使該基準標記來到以該複數個描繪單元之各個形成之該描繪線上,並以該光束之點光掃描該基準標記的掃描步驟;以該反射光檢測部檢測因該光束之掃描而從該基準標記產生之反射光,以獲得與該基準標記對應之檢測訊號的檢測步驟;以及根據該檢測訊號求出對應該複數個描繪線之配置狀態或彼此之配置誤差之調整資訊的步驟;根據該調整資訊,調整以該複數個描繪單元之各個描繪之該圖案之描繪狀態。 According to a third aspect of the present invention, in a substrate processing apparatus, the substrate processing apparatus includes: a support member having a predetermined reference mark discrete or continuous at a plurality of predetermined positions on the support surface; and a conveying device Supporting a predetermined width of the substrate on the support surface of the support member, and transporting the substrate at a predetermined speed in a longitudinal direction intersecting the width direction; the drawing device having a spot light along a beam to be projected on the substrate a plurality of drawing units that scan the obtained drawing line in the width direction and the predetermined pattern on the substrate in a range narrower than the width width of the substrate, and the pattern drawn on the substrate by each of the plurality of drawing units Disposing the drawing lines adjacent to each other in the width direction at a predetermined interval in a manner of joining the substrates in the longitudinal direction so as to be transferred in the strip direction; and a plurality of reflections a light detecting unit configured to detect a bearing surface from the support member due to illumination of the light beam from each of the plurality of drawing units Generating reflected light; comprising: moving the support member relative to the drawing device such that the fiducial mark comes to the drawing line formed by each of the plurality of drawing units, and the spot light of the light beam a scanning step of scanning the reference mark; detecting, by the reflected light detecting unit, the reflected light generated from the reference mark by the scanning of the light beam to obtain a detection signal corresponding to the reference mark; and determining the detection signal according to the detection signal And a step of adjusting information of the configuration state of the plurality of drawing lines or the arrangement error of each other; and adjusting the drawing state of the pattern drawn by each of the plurality of drawing units according to the adjustment information.

本發明第4態樣,係一種基板處理裝置,係一邊將經強度調變之光束之點光於基板上沿既定描繪線進行主掃描、一邊在與該描繪線交叉之方向進行該光束與該基板之副掃描,據以在該基板上描繪既定圖案, 其具備:支承構件,具有支承該基板之支承面;搬送裝置,使被該支承構件支承之該基板往該副掃描之方向移動;脈衝雷射光源,作為該光束、以重複發光頻率Fz輸出紫外波長帶之脈衝光束;以及描繪單元,具備依據將來自該脈衝雷射光源之脈衝光束待描繪於該描繪線上之圖案進行強度調變的調變器、將以該調變器調變之光束偏向掃描於一維的掃描光學系、以及將該經偏向掃描之光束投射向該基板的光束投射光學系;在將該描繪線之長度設為LBL、該光束之點光掃描過該長度LBL之掃描時間設為Ts、該點光沿該描繪線之方向之尺寸設為Xs時,將該脈衝雷射光源之發光頻率Fz設定為滿足Fz≧LBL/(Ts‧Xs)之關係。 According to a fourth aspect of the present invention, in a substrate processing apparatus, the light beam is irradiated on a substrate along a predetermined drawing line while the intensity-modulated beam is focused on the substrate, and the light beam is emitted in a direction intersecting the drawing line. Sub-scanning of the substrate, according to which a predetermined pattern is drawn on the substrate, The utility model comprises: a supporting member having a supporting surface for supporting the substrate; and a conveying device for moving the substrate supported by the supporting member in a direction of the sub-scanning; and a pulsed laser light source as the light beam, outputting ultraviolet light at a repeated emission frequency Fz a pulsed beam of a wavelength band; and a rendering unit having a modulator for intensity-modulating the pattern of the pulsed beam from the pulsed laser source to be drawn on the line of the laser, and deflecting the beam modulated by the modulator Scanning a one-dimensional scanning optical system and a beam projection optical system that projects the deflected light beam onto the substrate; scanning the length of the drawing line to LBL, scanning the beam of the light beam through the length LBL When the time is Ts and the size of the spot light in the direction of the drawing line is Xs, the light emission frequency Fz of the pulsed laser light source is set to satisfy the relationship of Fz ≧ LBL / (Ts ‧ Xs).

根據本發明之上述各態樣,能提供一種降低使用複數個描繪單元於基板之寬度方向接合圖案進行曝光時之接合誤差,而能對基板進行合適的進行使用複數個描繪單元之描繪的基板處理裝置、元件製造方法及基板處理裝置之調整方法。 According to the above aspects of the present invention, it is possible to provide a substrate processing capable of appropriately performing the drawing using a plurality of drawing units by appropriately reducing the bonding error when a plurality of drawing units are used for exposure in the width direction bonding pattern of the substrate. Apparatus, component manufacturing method, and method of adjusting a substrate processing apparatus.

1‧‧‧元件製造系統 1‧‧‧Component Manufacturing System

11‧‧‧描繪裝置 11‧‧‧Drawing device

12‧‧‧基板搬送機構 12‧‧‧Substrate transport mechanism

13‧‧‧裝置框架 13‧‧‧ device framework

14‧‧‧旋轉位置檢測機構 14‧‧‧Rotary position detection mechanism

16‧‧‧控制部 16‧‧‧Control Department

23‧‧‧第1光學平台 23‧‧‧1st optical platform

24‧‧‧移動機構 24‧‧‧Mobile agencies

25‧‧‧第2光學平台 25‧‧‧2nd optical platform

31‧‧‧校準檢測系 31‧‧‧ Calibration Test System

31Cs‧‧‧光電感測器 31Cs‧‧‧Light Inductance Detector

31f‧‧‧遮光構件 31f‧‧‧ shading members

41‧‧‧第1光學系 41‧‧‧1st Optical Department

42‧‧‧第2光學系 42‧‧‧2nd Optical Department

43‧‧‧第3光學系 43‧‧‧3rd Optical Department

44‧‧‧光束位移機構 44‧‧‧ Beam Displacement Mechanism

45‧‧‧光束位移機構 45‧‧‧ Beam Displacement Mechanism

51‧‧‧1/2波長板 51‧‧‧1/2 wavelength plate

52‧‧‧偏光鏡(偏光分束器) 52‧‧‧Polarizing mirror (polarizing beam splitter)

53‧‧‧散光器 53‧‧‧ astigmatizer

54‧‧‧第1反射鏡 54‧‧‧1st mirror

55‧‧‧第1中繼透鏡 55‧‧‧1st relay lens

56‧‧‧第2中繼透鏡 56‧‧‧2nd relay lens

57‧‧‧第2反射鏡 57‧‧‧2nd mirror

58‧‧‧第3反射鏡 58‧‧‧3rd mirror

59‧‧‧第4反射鏡 59‧‧‧4th mirror

60‧‧‧第1分束器 60‧‧‧1st beam splitter

61‧‧‧第5反射鏡 61‧‧‧5th mirror

62‧‧‧第2分束器 62‧‧‧2nd beam splitter

63‧‧‧第3分束器 63‧‧‧3rd beam splitter

64‧‧‧第6反射鏡 64‧‧‧6th mirror

71‧‧‧第7反射鏡 71‧‧‧7th mirror

72‧‧‧第8反射鏡 72‧‧‧8th mirror

73‧‧‧第4分束器 73‧‧‧4th beam splitter

74‧‧‧第9反射鏡 74‧‧‧9th mirror

81‧‧‧光偏向器 81‧‧‧Light deflector

82‧‧‧1/4波長板 82‧‧‧1/4 wavelength plate

83‧‧‧掃描器 83‧‧‧Scanner

84‧‧‧彎折鏡 84‧‧‧Bend mirror

85‧‧‧f-θ透鏡系 85‧‧‧f-θ lens system

86‧‧‧柱面透鏡 86‧‧‧ cylindrical lens

86B‧‧‧Y倍率修正用光學構件(透鏡群) 86B‧‧‧Y-rate correction optical member (lens group)

91‧‧‧中繼透鏡 91‧‧‧Relay lens

92‧‧‧遮光板 92‧‧ ‧ visor

93‧‧‧中繼透鏡 93‧‧‧Relay lens

94‧‧‧中繼透鏡 94‧‧‧Relay lens

95‧‧‧柱面透鏡 95‧‧‧ cylindrical lens

96‧‧‧反射鏡 96‧‧‧Mirror

97‧‧‧旋轉多面鏡 97‧‧‧Rotating polygon mirror

97a‧‧‧旋轉軸 97a‧‧‧Rotary axis

97b‧‧‧反射面 97b‧‧‧reflecting surface

98‧‧‧原點檢測器 98‧‧‧ Origin detector

AM1、AM2‧‧‧對準顯微鏡 AM1, AM2‧‧‧ alignment microscope

AX2‧‧‧旋轉中心線 AX2‧‧‧Rotating Center Line

CNT‧‧‧光源裝置 CNT‧‧‧ light source device

DL‧‧‧鬆弛 DL‧‧‧relaxation

DR‧‧‧旋轉圓筒 DR‧‧‧ rotating cylinder

DR4、DR6、DR7‧‧‧驅動滾輪 DR4, DR6, DR7‧‧‧ drive roller

EN1、EN2、EN3、EN4‧‧‧編碼器讀頭 EN1, EN2, EN3, EN4‧‧‧ encoder read head

EPC‧‧‧邊緣位置控制器 EPC‧‧‧Edge Position Controller

EVC‧‧‧調溫室 EVC‧‧‧ adjust greenhouse

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

GPa、GPb‧‧‧標尺部 GPa, GPb‧‧‧ ruler department

I‧‧‧旋轉軸 I‧‧‧Rotary axis

LB‧‧‧光束 LB‧‧‧beam

Le1~Le4‧‧‧設置方位線 Le1~Le4‧‧‧Set the bearing line

LL1~LL5‧‧‧描繪線 LL1~LL5‧‧‧ depicting line

P‧‧‧基板 P‧‧‧Substrate

PBS‧‧‧偏向分束器 PBS‧‧‧ bias beam splitter

RT1、RT2‧‧‧張力調整滾輪 RT1, RT2‧‧‧ tension adjustment wheel

Sf2‧‧‧軸部 Sf2‧‧‧Axis

SL‧‧‧分歧光學系 SL‧‧‧Differential Optical System

SU1、SU2‧‧‧防振單元 SU1, SU2‧‧‧ anti-vibration unit

UW1~UW5‧‧‧描繪單元 UW1~UW5‧‧‧Drawing unit

圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。 Fig. 1 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

圖2係顯示圖1之曝光裝置主要部之配置的立體圖。 Fig. 2 is a perspective view showing the configuration of a main portion of the exposure apparatus of Fig. 1.

圖3係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。 Fig. 3 is a view showing the arrangement relationship between an alignment microscope and a drawing line on a substrate.

圖4係顯示圖1之曝光裝置之旋轉圓筒及描繪裝置之構成的圖。 Fig. 4 is a view showing the configuration of a rotating cylinder and a drawing device of the exposure apparatus of Fig. 1.

圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。 Fig. 5 is a plan view showing the configuration of a main portion of the exposure apparatus of Fig. 1.

圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。 Fig. 6 is a perspective view showing the configuration of a divergent optical system of the exposure apparatus of Fig. 1.

圖7係顯示圖1之曝光裝置之複數個掃描器之配置關係的圖。 Fig. 7 is a view showing a configuration relationship of a plurality of scanners of the exposure apparatus of Fig. 1.

圖8係說明用以消除因掃描器反射面之傾斜造成之描繪線偏移之光學構成的圖。 Fig. 8 is a view for explaining an optical configuration for eliminating the deviation of the drawing line due to the inclination of the reflecting surface of the scanner.

圖9係顯示在基板上之對準顯微鏡與描繪線與編碼器讀頭之配置關係的立體圖。 Figure 9 is a perspective view showing the arrangement relationship between the alignment microscope and the drawing line and the encoder read head on the substrate.

圖10係顯示圖1之曝光裝置之旋轉圓筒之表面構造的立體圖。 Figure 10 is a perspective view showing the surface structure of a rotating cylinder of the exposure apparatus of Figure 1.

圖11係顯示在基板上之描繪線與描繪圖案之位置關係的說明圖。 Fig. 11 is an explanatory view showing a positional relationship between a drawing line and a drawing pattern on a substrate.

圖12係顯示光束點與描繪線之關係的說明圖。 Fig. 12 is an explanatory view showing a relationship between a beam spot and a drawing line.

圖13係模擬在基板上所得之2脈衝份之光束點之重疊量造成之強度分布變化的圖表。 Fig. 13 is a graph simulating the change in intensity distribution caused by the overlap of the beam points of two pulses obtained on the substrate.

圖14係關於第1實施形態之曝光裝置之調整方法的流程圖。 Fig. 14 is a flow chart showing a method of adjusting the exposure apparatus of the first embodiment.

圖15係以示意方式顯示旋轉圓筒之基準圖案與描繪線之關係的說明圖。 Fig. 15 is an explanatory view showing the relationship between the reference pattern of the rotating cylinder and the drawing line in a schematic manner.

圖16係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於亮視野受光之光電感測器輸出之訊號的說明圖。 Fig. 16 is an explanatory view showing, in a schematic manner, a signal output from a photodetector that receives reflected light from a reference pattern of a rotating cylinder in a bright field.

圖17係以示意方式顯示將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器的說明圖。 Fig. 17 is an explanatory view showing, in a schematic manner, a photodetector that receives reflected light from a reference pattern of a rotating cylinder in a dark field.

圖18係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器輸出之訊號的說明圖。 Fig. 18 is an explanatory view showing, in a schematic manner, a signal output from a photodetector that receives reflected light from a reference pattern of a rotating cylinder in a dark field.

圖19係以示意方式顯示旋轉圓筒之基準圖案彼此之位置關係的說明圖。 Fig. 19 is an explanatory view showing the positional relationship between the reference patterns of the rotary cylinders in a schematic manner.

圖20係以示意方式顯示複數個描繪線之相對位置關係的說明圖。 Fig. 20 is an explanatory view showing a relative positional relationship of a plurality of drawing lines in a schematic manner.

圖21係以示意方式顯示基板之每單位時間之移動距離與移動距離內所含之描繪線條數之關係的說明圖。 Fig. 21 is an explanatory view showing, in a schematic manner, the relationship between the moving distance per unit time of the substrate and the number of drawn lines included in the moving distance.

圖22係以示意方式顯示與脈衝光源之系統時脈同步之脈衝光的說明圖。 Fig. 22 is an explanatory view showing, in a schematic manner, pulsed light synchronized with the system clock of the pulse light source.

圖23係顯示各實施形態之元件製造方法的流程圖。 Fig. 23 is a flow chart showing a method of manufacturing a component of each embodiment.

針對用以實施本發明之形態(實施形態),一邊參照圖面一邊詳細說明。本發明當然不受限於以下實施形態記載之內容。又,以下記載之構成要素中,包含業者容易想定者、以及實質相同之物。此外,以下記載之構成要素可適當組合。又,在不脫離本發明要旨範圍內,可進行構成要素之各種省略、置換或變更。 The embodiment (embodiment) for carrying out the invention will be described in detail with reference to the drawings. The present invention is of course not limited to the contents described in the following embodiments. Further, among the constituent elements described below, those which are easy for the operator to think about and which are substantially the same are included. Further, the constituent elements described below can be combined as appropriate. Further, various omissions, substitutions, and changes of the components may be made without departing from the scope of the invention.

〔第1實施形態〕 [First Embodiment]

圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。第1實施形態之基板處理裝置係對基板P施以曝光處理的曝光裝置EX,、曝光裝置EX組裝在對曝光後基板P施以各種處理以製造元件之元件製造系統1中。首先,說明元件製造系統1。 Fig. 1 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. The substrate processing apparatus according to the first embodiment is an exposure apparatus EX that performs exposure processing on the substrate P, and the exposure apparatus EX is incorporated in the component manufacturing system 1 that applies various processes to the exposed substrate P to manufacture an element. First, the component manufacturing system 1 will be described.

<元件製造系統> <Component Manufacturing System>

元件製造系統1,係製造作為元件之可撓性顯示器的生產線(可撓性顯示器製造線)。可撓性顯示器,例如有機EL顯示器等。此元件製造系統1,係將可撓性(flexible)長條基板P捲成筒狀之未圖示之供應用捲筒送出該基板P,在對送出之基板P連續的施以各種處理後,將處理後之基板P作為可 撓性元件捲繞於未圖示之回收用捲筒之所謂的捲對捲(Roll to Roll)方式。於第1實施形態之元件製造系統1,係將薄膜狀之片狀基板P從供應用捲筒送出,從供應用捲筒送出之基板P依序經處理裝置U1、曝光裝置EX、處理裝置U2後,捲繞於回收用捲筒之例。此處,說明元件製造系統1之處理對象的基板P。 The component manufacturing system 1 is a production line (flexible display manufacturing line) for manufacturing a flexible display as a component. A flexible display such as an organic EL display or the like. The component manufacturing system 1 is configured to feed the substrate P by a supply reel (not shown) in which a flexible long substrate P is wound into a cylindrical shape, and after performing various processes on the substrate P that has been fed out continuously, Treating the processed substrate P as The flexible element is wound around a so-called roll-to-roll method of a recycling roll (not shown). In the component manufacturing system 1 of the first embodiment, the film-shaped sheet substrate P is fed from the supply reel, and the substrate P sent from the supply reel is sequentially processed by the processing device U1, the exposure device EX, and the processing device U2. After that, it is wound around a recycling reel. Here, the substrate P to be processed by the component manufacturing system 1 will be described.

基板P,係由例如樹脂薄膜、不鏽鋼等之金屬或合金構成之箔(foil)等。樹脂薄膜之材質,可使用包含例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、聚乙烯醇樹脂等材料中之一種或二種以上者。 The substrate P is a foil made of a metal or an alloy such as a resin film or stainless steel. The material of the resin film may be, for example, a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene vinyl copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate. One or more of materials such as an ester resin, a polystyrene resin, and a polyvinyl alcohol resin.

基板P,以選擇例如熱膨脹係數顯著不大、可實質忽視在對基板P實施之各種處理中因受熱而產生之變形量者較佳。熱膨脹係數,可藉由例如將無機填充物混合於樹脂薄膜據以設定為較對應處理温度等之閾值小。無機填充物,可以是例如氧化鈦、氧化鋅、氧化鋁、氧化矽等。又,基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、或箔等的積層體。 The substrate P is preferably selected such that the coefficient of thermal expansion is remarkably small, and the amount of deformation due to heat in various processes performed on the substrate P can be substantially ignored. The coefficient of thermal expansion can be set to be smaller than a threshold value corresponding to the processing temperature or the like by, for example, mixing the inorganic filler with the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, cerium oxide or the like. In addition, the substrate P may be a single layer body of extremely thin glass having a thickness of about 100 μm manufactured by a floating method or the like, or a laminated body in which the above-mentioned resin film or foil is bonded to the ultra-thin glass.

以此方式構成之基板P,被捲繞成捲筒狀而成為供應用捲筒,此供應用捲筒被裝著於元件製造系統1。裝有供應用捲筒之元件製造系統1,對從供應用捲筒往長條方向送出之基板P反覆實行用以製造元件之各種處理。因此,於處理後之基板P上,於長條方向以一定間隔連接之狀態形成有複數個電子元件(顯示面板、印刷基板等)用之圖案。也就是說,從供應用捲筒送出之基板P,為多面用之基板。此外,基板P亦可以是預先 藉由既定前處理,將其表面予以改質而活性化者、或於表面形成用以精密圖案化之微細間隔壁構造(以壓印(imprint)法形成之凹凸構造)者。 The substrate P configured in this manner is wound into a roll shape to be a supply roll, and the supply roll is attached to the component manufacturing system 1. The component manufacturing system 1 equipped with a supply reel performs various processes for manufacturing components on the substrate P fed from the supply reel to the strip direction. Therefore, a pattern for a plurality of electronic components (display panel, printed circuit board, etc.) is formed on the substrate P after the processing in a state in which the strips are connected at regular intervals. That is, the substrate P fed from the supply reel is a substrate for multi-faceted use. In addition, the substrate P can also be in advance The surface is modified by a predetermined pretreatment to be activated, or a fine partition structure (a concave-convex structure formed by an imprint method) for precise patterning is formed on the surface.

經處理後之基板P,被捲繞成捲筒狀作為回收用捲筒加以回收。回收用捲筒,被安裝於未圖示之切割裝置。裝有回收用捲筒之切割裝置,將處理後之基板P分割(切割)成各個元件,據以成為複數個元件。基板P之尺寸,例如,寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸則為10m以上。當然,基板P之尺寸不限於上述尺寸 The treated substrate P is wound into a roll shape and recovered as a recovery roll. The recycling reel is attached to a cutting device (not shown). A cutting device equipped with a reel for recycling is used to divide (cut) the processed substrate P into individual elements, thereby forming a plurality of elements. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side) and 10 m or more in the longitudinal direction (direction of the strip). Of course, the size of the substrate P is not limited to the above size

接著,參照圖1說明元件製造系統1。元件製造系統1具備處理裝置U1、曝光裝置EX、以及處理裝置U2。又,圖1,係X方向、Y方向及Z方向成正交之正交座標系。X方向,係於水平面內從處理裝置U1經曝光裝置EX朝向處理裝置U2之方向。Y方向,係於水平面內與X方向正交之方向,為基板P之寬度方向。Z方向,係X方向與Y方向正交之方向(鉛直方向),XY面,係與設置曝光裝置EX之製造線之設置面E平行。 Next, the component manufacturing system 1 will be described with reference to Fig. 1 . The component manufacturing system 1 includes a processing device U1, an exposure device EX, and a processing device U2. In addition, FIG. 1 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is in the horizontal direction from the processing device U1 through the exposure device EX toward the processing device U2. The Y direction is a direction orthogonal to the X direction in the horizontal plane and is the width direction of the substrate P. The Z direction is a direction orthogonal to the Y direction and the Y direction (vertical direction), and the XY plane is parallel to the installation surface E of the manufacturing line on which the exposure apparatus EX is provided.

處理裝置U1,係對於曝光裝置EX進行曝光處理之基板P進行前製程之處理(前處理)。處理裝置U1,將經前處理之基板P送向曝光裝置EX。此時,被送至曝光裝置EX之基板P,係其表面形成有感光性機能層(光感應層)之基板(感光基板)P。 The processing apparatus U1 performs pre-processing (pre-processing) on the substrate P on which the exposure apparatus EX performs exposure processing. The processing device U1 sends the pre-processed substrate P to the exposure device EX. At this time, the substrate P sent to the exposure apparatus EX is a substrate (photosensitive substrate) P on which a photosensitive functional layer (photosensitive layer) is formed.

此處,感光性機能層係作為溶液塗於基板P上,經乾燥而成為層(膜)。典型的感光性機能層,有光阻劑作為顯影處理後無需之材料,在受紫外線照射之部分之親撥液性經改質之感光性矽烷耦合劑(SAM)、或受紫外線照射之部分露出鍍敷還元基之感光性還元材等。作為感光性機能 層使用感光性矽烷耦合劑時,由於基板P上被紫外線曝光之圖案部分由撥液性改質為親液性,因此於成為親液性之部分上選擇性塗布導電性墨水(含有銀或銅等導電性奈米粒子之墨水),以形成圖案層。作為感光性機能層使用感光性還元材時,由於會在基板P上被紫外線曝光之圖案部分露出鍍敷還元基,因此,曝光後,立即將基板P浸漬於含鈀離子等之鍍敷液中一定時間,以形成(析出)鈀之圖案層。 Here, the photosensitive functional layer is applied as a solution onto the substrate P and dried to form a layer (film). A typical photosensitive functional layer, which has a photoresist as a material which is not required after development treatment, is exposed to a liquid-irradiated portion of a photosensitive decane coupling agent (SAM) or a portion exposed to ultraviolet light. The plating is also based on the photosensitive material and the like. As a photosensitive function When a photosensitive decane coupling agent is used for the layer, since the pattern portion exposed to the ultraviolet ray on the substrate P is changed from liquid repellency to lyophilic property, the conductive ink (containing silver or copper) is selectively applied to the lyophilic portion. The ink of the conductive nanoparticle is formed to form a patterned layer. When a photosensitive material is used as the photosensitive functional layer, since the plating substrate is exposed on the portion of the substrate P exposed to ultraviolet rays, the substrate P is immersed in a plating solution containing palladium ions or the like immediately after exposure. For a certain period of time, a pattern layer of palladium is formed (precipitated).

曝光裝置EX,對從處理裝置U1供應之基板P描繪例如顯示器面板用之各種電路或各種配線等之圖案。詳情留待後敘,此曝光裝置EX,係將從複數個描繪單元UW1~UW5之各個投射向基板P之光束LB(以下,亦稱描繪光束LB。)之各個掃描於既定掃描方向所得之複數個描繪線LL1~LL5,於基板P曝光出既定圖案。 The exposure apparatus EX draws, for example, a pattern of various circuits or various wirings for a display panel on the substrate P supplied from the processing apparatus U1. For further details, the exposure apparatus EX is a plurality of scanning beams LB (hereinafter, also referred to as drawing light beams LB) that are projected from the respective drawing units UW1 to UW5 to the substrate P in a predetermined scanning direction. Lines LL1 to LL5 are drawn, and a predetermined pattern is exposed on the substrate P.

處理裝置U2承接於曝光裝置EX曝光處理後之基板P,對基板P進行後製程之處理(後處理)。處理裝置U2,在基板P之感光性機能層為光阻劑之情形時,進行在基板P之玻璃轉移温度以下之後烘烤處理、顯影處理、洗淨處理、乾燥處理等。又,在基板P之感光性機能層為感光性鍍敷還元材之情形時,處理裝置U2則進行無電電鍍處理、洗淨處理、乾燥處理等。此外,在基板P之感光性機能層為感光性矽烷耦合劑之情形時,處理裝置U2係進行對基板P上成為親液性之部分之液狀墨水之選擇性塗布處理、乾燥處理等。經由此種處理裝置U2,於基板P上形成元件之圖案層。 The processing apparatus U2 is subjected to the substrate P after the exposure processing of the exposure apparatus EX, and performs post-processing (post-processing) on the substrate P. When the photosensitive functional layer of the substrate P is a photoresist, the processing apparatus U2 performs a baking process, a development process, a washing process, a drying process, and the like after the glass transition temperature of the substrate P is equal to or lower. Further, when the photosensitive functional layer of the substrate P is a photosensitive plating material, the processing apparatus U2 performs an electroless plating treatment, a cleaning treatment, a drying treatment, and the like. Further, when the photosensitive functional layer of the substrate P is a photosensitive decane coupling agent, the processing device U2 performs selective coating treatment, drying treatment, and the like on the liquid ink which is a part of the substrate P which is lyophilic. A pattern layer of the element is formed on the substrate P via such a processing device U2.

<曝光裝置(基板處理裝置)> <Exposure device (substrate processing device)>

接著,參照圖1至圖10,說明曝光裝置EX。圖2係顯示圖1之曝光裝置主要部之配置的立體圖。圖3係顯示在基板上之對準顯微鏡與描繪線之 配置關係的圖。圖4係顯示圖1之曝光裝置之旋轉圓筒及描繪裝置(描繪單元)之構成的圖。圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。圖7係顯示圖1之曝光裝置之複數個描繪單元內之掃描器之配置關係的圖。圖8係說明用以消除因掃描器反射面之傾斜造成之描繪線偏移之光學構成的圖。圖9係顯示在基板上之對準顯微鏡與描繪線之編碼器讀頭之配置關係的立體圖。圖10係顯示圖1之曝光裝置之旋轉圓筒表面構造之一例的立體圖。 Next, an exposure apparatus EX will be described with reference to Figs. 1 to 10 . Fig. 2 is a perspective view showing the configuration of a main portion of the exposure apparatus of Fig. 1. Figure 3 shows the alignment microscope and the drawing line on the substrate. A diagram of the configuration relationship. Fig. 4 is a view showing a configuration of a rotating cylinder and a drawing device (drawing unit) of the exposure apparatus of Fig. 1. Fig. 5 is a plan view showing the configuration of a main portion of the exposure apparatus of Fig. 1. Fig. 6 is a perspective view showing the configuration of a divergent optical system of the exposure apparatus of Fig. 1. Figure 7 is a diagram showing the arrangement relationship of scanners in a plurality of drawing units of the exposure apparatus of Figure 1. Fig. 8 is a view for explaining an optical configuration for eliminating the deviation of the drawing line due to the inclination of the reflecting surface of the scanner. Figure 9 is a perspective view showing the arrangement relationship between the alignment microscope on the substrate and the encoder read head of the drawing line. Fig. 10 is a perspective view showing an example of a surface structure of a rotating cylinder of the exposure apparatus of Fig. 1.

如圖1所示,曝光裝置EX,係不使用光罩之曝光裝置、所謂的無光罩方式的描繪曝光裝置,於本實施形態,係藉由將基板P一邊以一定速度連續往搬送方向(長條方向)搬送、一邊將描繪光束LB之點(spot)光於既定掃描方向(基板P之寬度方向)高速掃描,據以進行於基板P表面之描繪,於基板P上形成既定圖案之逐線(raster scan)方式的直接描繪曝光裝置。 As shown in Fig. 1, the exposure apparatus EX is an exposure apparatus that does not use a photomask, and a so-called maskless exposure apparatus. In the present embodiment, the substrate P is continuously conveyed at a constant speed ( In the strip direction), the spot light of the drawing light beam LB is scanned at a high speed in a predetermined scanning direction (the width direction of the substrate P), and the surface of the substrate P is drawn on the surface of the substrate P to form a predetermined pattern on the substrate P. A direct depiction exposure device for the raster scan mode.

如圖1所示,曝光裝置EX具備描繪裝置11、基板搬送機構12、對準顯微鏡AM1、AM2、以及控制部16。描繪裝置11具備複數個描繪單元UW1~UW5。描繪裝置11,在被作為基板搬送機構12一部分之圓筒狀旋轉圓筒DR之外周面上方緊貼支承之狀態下搬送之基板P之一部分,藉由複數個描繪單元UW1~UW5描繪既定圖案。基板搬送機構12,將從前製程之處理裝置U1搬送而來之基板P,以既定速度往後製程之處理裝置U2搬送。對準顯微鏡AM1、AM2,為進行待描繪於基板P上之圖案與基板P之相對的位置對準,檢測預先形成在基板P之對準標記等。包含電腦、微電腦、CPU、FPGA等之控制部16,控制曝光裝置EX之各部,使各部實施 處理。控制部16可以是控制元件製造系統1之上位控制裝置之一部分或全部。又,控制部16受上位控制裝置控制。上位控制裝置,可以是例如管理生產線之主電腦等之其他裝置。 As shown in FIG. 1 , the exposure apparatus EX includes a drawing device 11 , a substrate transfer mechanism 12 , alignment microscopes AM1 and AM2 , and a control unit 16 . The drawing device 11 includes a plurality of drawing units UW1 to UW5. The drawing device 11 draws a predetermined pattern by a plurality of drawing units UW1 to UW5 in a portion of the substrate P conveyed while being supported by the cylindrical rotating cylinder DR which is a part of the substrate conveying mechanism 12. The substrate transfer mechanism 12 transports the substrate P transferred from the processing device U1 of the previous process to the processing device U2 of the subsequent process at a predetermined speed. The alignment microscopes AM1 and AM2 are aligned so that the pattern to be drawn on the substrate P is aligned with the substrate P, and alignment marks or the like formed in advance on the substrate P are detected. The control unit 16 including a computer, a microcomputer, a CPU, an FPGA, and the like controls each part of the exposure apparatus EX so that each part is implemented deal with. The control unit 16 may be part or all of the upper control device of the control element manufacturing system 1. Further, the control unit 16 is controlled by the upper control device. The upper control device may be, for example, another device such as a host computer that manages the production line.

又,如圖2所示,曝光裝置EX具備支承描繪裝置11及基板搬送機構12之至少一部(旋轉圓筒DR等)之裝置框架13,於該裝置框架13安裝有檢測旋轉圓筒DR之旋轉角度位置及旋轉速度、旋轉軸方向之變位等的旋轉光束點光SP位置檢測機構(圖4及圖9所示之編碼器讀頭等)、與圖1(或圖3、圖9)所示之對準顯微鏡AM1、AM2等。再者,於曝光裝置EX內,如圖4、圖5所示的設有射出作為描繪光束LB之紫外雷射光(脈衝光)的光源裝置CNT。此曝光裝置EX,將從光源裝置CNT射出之描繪光束LB,以大致均等光量(照度)分配至構成描繪裝置11之複數個描繪單元UW1~UW5之各個。 Further, as shown in FIG. 2, the exposure apparatus EX includes a device frame 13 that supports at least one of the drawing device 11 and the substrate transfer mechanism 12 (such as a rotating cylinder DR), and the detection frame is mounted with a detecting rotating cylinder DR. Rotating beam spot SP position detecting mechanism (such as encoder head shown in Figs. 4 and 9) such as rotation angle position, rotation speed, and displacement in the rotation axis direction, and Fig. 1 (or Figs. 3 and 9) The alignment microscopes AM1, AM2, etc. are shown. Further, in the exposure apparatus EX, as shown in FIGS. 4 and 5, a light source device CNT that emits ultraviolet laser light (pulsed light) as the drawing light beam LB is provided. The exposure device EX distributes the drawing light beam LB emitted from the light source device CNT to each of the plurality of drawing units UW1 to UW5 constituting the drawing device 11 with a substantially uniform light amount (illuminance).

如圖1所示,曝光裝置EX係收納在調溫室EVC內。調溫室EVC,透過被動或主動的防振單元SU1、SU2設置在製造工場之設置面(地面)E。防振單元SU1、SU2設在設置面E上,用以降低來自設置面E之振動。調溫室EVC,藉由將內部保持於既定温度,據以抑制在內部搬送之基板P因温度造成之形狀變化。 As shown in Fig. 1, the exposure apparatus EX is housed in a greenhouse EVC. The greenhouse EVC is adjusted to the setting surface (ground) E of the manufacturing plant through the passive or active vibration-proof units SU1 and SU2. The anti-vibration units SU1, SU2 are provided on the setting surface E for reducing the vibration from the setting surface E. The greenhouse EVC is adjusted to maintain the internal temperature at a predetermined temperature, thereby suppressing the shape change of the substrate P transported inside due to temperature.

曝光裝置EX之基板搬送機構12,從基板P之搬送方向上游側起依序具有邊緣位置控制器EPC、驅動滾輪DR4、張力調整滾輪RT1、旋轉圓筒(圓筒圓筒)DR、張力調整滾輪RT2、驅動滾輪DR6、及驅動滾輪DR7。 The substrate transfer mechanism 12 of the exposure apparatus EX has an edge position controller EPC, a drive roller DR4, a tension adjustment roller RT1, a rotary cylinder (cylinder cylinder) DR, and a tension adjustment roller in this order from the upstream side in the conveyance direction of the substrate P. RT2, drive roller DR6, and drive roller DR7.

邊緣位置控制器EPC係調整從處理裝置U1搬送之基板P於 寬度方向(Y方向)之位置。邊緣位置控制器EPC,以從處理裝置U1送來之基板P之寬度方向端部(邊緣)位置,能相對目標位置在±十數μm~數十μm程度之範圍內,而使基板P於寬度方向微動,修正基板P於寬度方向之位置。 The edge position controller EPC adjusts the substrate P transferred from the processing device U1. The position in the width direction (Y direction). The edge position controller EPC, in the width direction end (edge) position of the substrate P sent from the processing device U1, can be within a range of ±10 μm to several tens μm with respect to the target position, and the substrate P is widened. The direction is slightly moved to correct the position of the substrate P in the width direction.

夾持方式之驅動滾輪DR4,一邊夾持從邊緣位置控制器EPC搬送而來之基板P之正反兩面一邊旋轉,將基板P送向搬送方向之下游側,以將基板P往旋轉圓筒DR搬送。旋轉圓筒DR,一邊使基板P上之圖案待曝光之部分緊貼於從延伸於Y方向之旋轉中心線(旋轉軸)AX2具一定半徑之圓筒狀外周面以加以支承、一邊繞旋轉中心線AX2旋轉,據以將基板P往長條方向搬送。 The driving roller DR4 of the clamping type rotates while rotating the front and back sides of the substrate P conveyed from the edge position controller EPC, and sends the substrate P to the downstream side in the conveying direction to move the substrate P toward the rotating cylinder DR Transfer. By rotating the cylinder DR, the portion of the substrate P to be exposed is adhered to a cylindrical outer peripheral surface having a certain radius from a rotation center line (rotation axis) AX2 extending in the Y direction, and is supported around the rotation center. The wire AX2 is rotated, and the substrate P is transported in the longitudinal direction.

為使此種旋轉圓筒DR繞旋轉中心線AX2旋轉,於旋轉圓筒DR之兩側設有與旋轉中心線AX2同軸之軸(shaft)部Sf2,軸部Sf2,如圖2所示,透過軸承被軸支於裝置框架13。於此軸部Sf2,賦予來自未圖示之驅動源(馬達及減速齒輪機構等)之旋轉力矩。又,將包含旋轉中心線AX2與YZ面平行之面,設為中心面p3。 In order to rotate the rotating cylinder DR about the rotation center line AX2, a shaft portion Sf2 coaxial with the rotation center line AX2 is provided on both sides of the rotation cylinder DR, and the shaft portion Sf2 is transmitted through the shaft portion Sf2 as shown in FIG. The bearing is pivoted to the device frame 13. The shaft portion Sf2 is provided with a rotational torque from a drive source (such as a motor and a reduction gear mechanism) (not shown). Further, a plane including the rotation center line AX2 and the YZ plane is defined as a center plane p3.

2組張力調整滾輪RT1、RT2,對被捲繞支承於旋轉圓筒DR之基板P賦予既定張力。2組夾持式驅動滾輪DR6、DR7於基板P之搬送方向相隔既定間隔配置,對曝光後之基板P賦予既定之鬆弛DL。藉由驅動滾輪DR6夾持搬送之基板P之上游側旋轉、驅動滾輪DR7夾持搬送之基板P之下游側旋轉,據以將基板P搬送向處理裝置U2。此時,基板P由於被賦予有鬆弛DL,因能吸收較驅動滾輪DR6在搬送方向下游側產生之基板P之搬送速度之變動,隔絕因搬送速度之變動對基板P造成之曝光處理之影 響。 The two sets of tension adjusting rollers RT1 and RT2 apply a predetermined tension to the substrate P that is wound and supported by the rotating cylinder DR. The two sets of the grip type drive rollers DR6 and DR7 are disposed at a predetermined interval in the transport direction of the substrate P, and a predetermined slack DL is applied to the exposed substrate P. The substrate P is conveyed to the processing device U2 by the rotation of the upstream side of the substrate P sandwiched and conveyed by the driving roller DR6 and the downstream side of the substrate P sandwiched and transported by the driving roller DR7. In this case, the substrate P is provided with the slack DL, and the movement speed of the substrate P generated on the downstream side of the transport roller DR6 in the transport direction can be absorbed, and the exposure processing caused by the variation of the transport speed on the substrate P is blocked. ring.

從而,基板搬送機構12,能對從處理裝置U1搬送而來之基板P,藉由邊緣位置控制器EPC調整於寬度方向之位置。基板搬送機構12,將寬度方向之位置經調整之基板P,藉由驅動滾輪DR4搬送至張力調整滾輪RT1,將通過張力調整滾輪RT1之基板P搬送至旋轉圓筒DR。基板搬送機構12,藉由使旋轉圓筒DR旋轉,據以將被支承於旋轉圓筒DR之基板P搬送向張力調整滾輪RT2。基板搬送機構12,將搬送至張力調整滾輪RT2之基板P搬送至驅動滾輪DR6,將搬送至驅動滾輪DR6之基板P搬送至驅動滾輪DR7。接著,基板搬送機構12藉由驅動滾輪DR6及驅動滾輪DR7,一邊對基板P賦予鬆弛DL、一邊將基板P搬送向處理裝置U2。 Therefore, the substrate transfer mechanism 12 can adjust the position of the substrate P transported from the processing apparatus U1 to the position in the width direction by the edge position controller EPC. The substrate transfer mechanism 12 transports the substrate P whose position in the width direction is adjusted to the tension adjustment roller RT1 by the drive roller DR4, and transports the substrate P that has passed through the tension adjustment roller RT1 to the rotary cylinder DR. The substrate transfer mechanism 12 rotates the rotary cylinder DR to transport the substrate P supported by the rotary cylinder DR to the tension adjustment roller RT2. The substrate transfer mechanism 12 transports the substrate P transported to the tension adjustment roller RT2 to the drive roller DR6, and transports the substrate P transported to the drive roller DR6 to the drive roller DR7. Next, the substrate transport mechanism 12 transports the substrate P to the processing device U2 while applying the slack DL to the substrate P by the drive roller DR6 and the drive roller DR7.

再次參照圖2,說明曝光裝置EX之裝置框架13。圖2中,X方向、Y方向及Z方向為一正交之正交座標系,係與圖1相同之正交座標系。 Referring again to Fig. 2, the apparatus frame 13 of the exposure apparatus EX will be described. In Fig. 2, the X direction, the Y direction, and the Z direction are orthogonal orthogonal coordinate systems, which are the same orthogonal coordinate systems as those of Fig. 1.

如圖2所示,裝置框架13,從Z方向之下方側依序具有本體框架21、支承機構三點座22、第1光學平台23、移動機構24、以及第2光學平台25。本體框架21係透過防振單元SU1、SU2設置在設置面E上之部分。本體框架21,將旋轉圓筒DR及張力調整滾輪RT1(未圖示)、RT2軸支(支承)成可旋轉。第1光學平台23,設在旋轉圓筒DR之鉛直方向上方側,透過三點座22設置於本體框架21。三點座22,將第1光學平台23以3個支承點加以支承,於各支承點之Z方向位置(高度位置)可調整。因此,三點座22可將第1光學平台23之平台面相對水平面之傾斜調整為既定傾斜。又,於裝置框架13之組裝時,本體框架21與三點座22之間,可 在XY面內,於X方向及Y方向進行位置調整。另一方面,於裝置框架13之組裝後,本體框架21與三點座22之間則成為在XY面內被固定之狀態(剛性狀態)。 As shown in FIG. 2, the apparatus frame 13 has a main body frame 21, a support mechanism three-point seat 22, a first optical table 23, a moving mechanism 24, and a second optical table 25 in this order from the lower side in the Z direction. The main body frame 21 is a portion that is provided on the installation surface E through the vibration isolating units SU1 and SU2. The main body frame 21 is rotatably supported by the rotating cylinder DR and the tension adjusting roller RT1 (not shown) and the RT2 shaft. The first optical stage 23 is provided on the upper side in the vertical direction of the rotary cylinder DR, and is provided in the main body frame 21 through the three-point seat 22. The three-point seat 22 supports the first optical table 23 at three support points, and is adjustable in the Z-direction position (height position) of each support point. Therefore, the three-point seat 22 can adjust the inclination of the land surface of the first optical table 23 with respect to the horizontal plane to a predetermined inclination. Moreover, between the body frame 21 and the three-point seat 22, when the device frame 13 is assembled, Position adjustment is performed in the X direction and the Y direction in the XY plane. On the other hand, after the assembly of the apparatus frame 13, the main body frame 21 and the three-point seat 22 are in a state of being fixed in the XY plane (rigid state).

第2光學平台25設在第1光學平台23之鉛直方向上方側,透過移動機構24設置於第1光學平台23。第2光學平台25,其平台面與第1光學平台23之平台面平行。於第2光學平台25,設有描繪裝置11之複數個描繪單元UW1~UW5。移動機構24,可在將第1光學平台23及第2光學平台25各個之平台面保持成平行之狀態下,以延伸於鉛直方向之既定旋轉軸I為中心,相對第1光學平台23使第2光學平台25精密的微幅旋轉。其旋轉範圍,例如係相對基準位置在±數百毫弧度程度,能以1~數毫弧度之分解能力進行角度設定之構造。又,移動機構24,亦具備可在將第1光學平台23及第2光學平台25各個之平台面保持於平行之狀態下,相對第1光學平台23使第2光學平台25於X方向及Y方向之至少一方精密的微幅移動的機構,可使旋轉軸I從基準位置往X方向或Y方向以μm級之分解能力微幅變位。此旋轉軸I,於基準位置,係於中心面p3內延伸於鉛直方向且通過捲繞在旋轉圓筒DR之基板P表面(順著圓周面彎曲之描繪面)內之既定點(基板P之寬度方向中點)(參照圖3)。藉由此種移動機構24,相對第1光學平台23使第2光學平台25旋轉或移動,即能一體的調整複數個描繪單元UW1~UW5相對旋轉圓筒DR、或被捲繞於旋轉圓筒DR之基板P之位置。 The second optical stage 25 is provided on the upper side of the first optical stage 23 in the vertical direction, and is provided on the first optical stage 23 through the moving mechanism 24 . The second optical stage 25 has a land surface parallel to the land surface of the first optical table 23. The second optical stage 25 is provided with a plurality of drawing units UW1 to UW5 of the drawing device 11. In the state in which the platform surfaces of the first optical table 23 and the second optical table 25 are held in parallel, the moving mechanism 24 can be made to be opposed to the first optical table 23 with respect to the predetermined rotation axis I extending in the vertical direction. 2 optical platform 25 precise micro-rotation. The rotation range is, for example, a structure in which the angle is set to a range of ± several hundred radians with respect to the reference position and can be set with a resolution of 1 to several milliradians. Further, the moving mechanism 24 is configured to hold the second optical table 25 in the X direction and Y with respect to the first optical table 23 while maintaining the land surfaces of the first optical table 23 and the second optical table 25 in parallel. The mechanism for precisely moving at least one of the directions can slightly shift the rotational axis I from the reference position to the X direction or the Y direction by a resolution of μm. The rotation axis I is a predetermined point in the center plane p3 extending in the vertical direction and passing through the surface of the substrate P of the rotating cylinder DR (the drawing surface curved along the circumferential surface) at the reference position (substrate P) Midpoint in the width direction) (Refer to Figure 3). By the moving mechanism 24, the second optical table 25 is rotated or moved with respect to the first optical table 23, that is, the plurality of drawing units UW1 to UW5 can be integrally adjusted with respect to the rotating cylinder DR or wound around the rotating cylinder. The position of the substrate P of the DR.

接著,參照圖5說明光源裝置CNT。光源裝置CNT設置在裝置框架13之本體框架21上。光源裝置CNT射出投射於基板P之作為描 繪光束LB之雷射光。光源裝置CNT,具有射出適於基板P上之感光性機能層之曝光之既定波長帶域、光活性作用強之紫外帶之光的光源。作為光源,可利用例如連續振盪、或以數KHz~數百MHz程度脈衝振盪出YAG之第三高次諧波雷射光(波長355nm)的雷射光源。 Next, the light source device CNT will be described with reference to Fig. 5 . The light source device CNT is disposed on the body frame 21 of the device frame 13. The light source device CNT is projected onto the substrate P as a depiction Paint the laser light of the beam LB. The light source device CNT has a light source that emits light of a predetermined wavelength band suitable for exposure of the photosensitive functional layer on the substrate P and a light-active ultraviolet band. As the light source, for example, a laser light source that continuously oscillates or oscillates the third harmonic laser light of YAG (wavelength: 355 nm) in a range of several KHz to several hundreds of MHz can be used.

光源裝置CNT具備雷射光產生部CU1及波長轉換部CU2。雷射光產生部CU1具備雷射光源OSC、以及光纖增幅器FB1、FB2。雷射光產生部CU1射出基本波雷射光Ls。光纖增幅器FB1、FB2將基本波雷射光Ls以光纖加以増幅。雷射光產生部CU1使増幅之基本波雷射光Lr射入波長轉換部CU2。於波長轉換部CU2設有波長轉換光學元件、分光鏡及偏光分束器、稜鏡等,藉由此等光(波長)選擇零件之使用取出第三高次諧波雷射波長355nm之雷射光(描繪光束LB)。此時,使發出種光之雷射光源OSC與系統時脈等同步進行脈衝點燈,光源裝置CNT即作為數KHz~數百MHz程度之脈衝光發出波長355nm之描繪光束LB。又,使用此種光纖增幅器之情形時,依據雷射光源OSC之脈衝驅動之態樣,可將最終輸出之雷射光(Lr及LB)之1脈衝發光時間控制成微微秒級。 The light source device CNT includes a laser light generating unit CU1 and a wavelength converting unit CU2. The laser light generating unit CU1 includes a laser light source OSC and optical fiber amplifiers FB1 and FB2. The laser light generating unit CU1 emits the fundamental wave laser light Ls. The fiber amplifiers FB1, FB2 oscillate the basic wave laser light Ls with the fiber. The laser light generating unit CU1 causes the fundamental wave laser light Lr of the amplitude to be incident on the wavelength conversion unit CU2. The wavelength conversion unit CU2 is provided with a wavelength conversion optical element, a beam splitter, a polarization beam splitter, a chirp, etc., and the third higher harmonic laser light having a laser wavelength of 355 nm is taken out by using the light (wavelength) selective component. (Drawing light beam LB). At this time, the laser light source OSC that emits the seed light is pulse-lighted in synchronization with the system clock or the like, and the light source device CNT emits the drawing light beam LB having a wavelength of 355 nm as pulse light of several KHz to several hundreds of MHz. Further, in the case of using such a fiber amplifier, the pulse-on time of the final output laser light (Lr and LB) can be controlled to a picosecond level depending on the pulse driving of the laser light source OSC.

又,作為光源,亦可利用例如具有紫外帶之輝線(g線、h線、i線等)之水銀燈等之燈光源、於波長450nm以下之紫外帶具有振盪峰值之雷射二極體、發光二極體(LED)等之固體光源、或發出遠紫外光(DUV光)之KrF準分子雷射光(波長248nm)、ArF準分子雷射光(波長193nm)、XeCl準分子雷射(波長308nm)等之氣體雷射光源。 Further, as the light source, for example, a light source such as a mercury lamp having a glow line (g line, h line, i line, or the like) having an ultraviolet band, a laser diode having an oscillation peak at an ultraviolet band having a wavelength of 450 nm or less, and a light emission can be used. Solid-state light source such as diode (LED), or KrF excimer laser light (wavelength 248 nm) emitting far ultraviolet light (DUV light), ArF excimer laser light (wavelength 193 nm), XeCl excimer laser (wavelength 308 nm) Wait for a gas laser source.

此處,從光源裝置CNT射出之描繪光束LB,如後述般,透過各描繪單元UW1~UW5內所設之偏光分束器PBS投射於基板P。一般而 言,偏光分束器PBS會反射為S偏光之直線偏光的光束,而使為P偏光之直線偏光的光束穿透。因此,於光源裝置CNT,以射入偏光分束器PBS之描繪光束LB為射出直線偏光(S偏光)之光束的雷射光較佳。此外,由於雷射光之能量密度高,因此能適當的確保投射於基板P之光束之照度。 Here, the drawing light beam LB emitted from the light source device CNT is projected onto the substrate P through the polarization beam splitter PBS provided in each of the drawing units UW1 to UW5 as will be described later. Generally In other words, the polarizing beam splitter PBS reflects the linearly polarized beam of S-polarized light, and penetrates the beam of the linearly polarized light that is P-polarized. Therefore, in the light source device CNT, it is preferable that the drawing light beam LB incident on the polarization beam splitter PBS is a laser light that emits a linearly polarized light (S-polarized light beam). Further, since the energy density of the laser light is high, the illuminance of the light beam projected on the substrate P can be appropriately ensured.

其次,針對曝光裝置EX之描繪裝置11,亦參照圖3加以說明。描繪裝置11係使用複數個描繪單元UW1~UW5之所謂的多光束型描繪裝置11。此描繪裝置11,將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數個描繪光束LB沿著如圖3之基板P上之複數條(第1實施形態中例如為5條)描繪線LL1~LL5分別聚光為微小之點光(數μm徑)加以掃描。描繪裝置11,將以複數個描繪線LL1~LL5之各個在基板P上描繪之圖案彼此於基板P之寬度方向加以接合。首先,參照圖3,說明以描繪裝置11掃描複數個描繪光束LB據以在基板P上形成之複數條描繪線LL1~LL5(點光之掃描軌跡)。 Next, the drawing device 11 for the exposure device EX will be described with reference to Fig. 3 . The drawing device 11 is a so-called multi-beam type drawing device 11 that uses a plurality of drawing units UW1 to UW5. In the drawing device 11, the drawing light beam LB emitted from the light source device CNT is divided into a plurality of stripes, and the plurality of divergent drawing light beams LB are arranged along a plurality of stripes on the substrate P in FIG. 3 (for example, in the first embodiment, 5) The drawing lines LL1 to LL5 are respectively condensed into minute light (several μm diameter) for scanning. The drawing device 11 joins the patterns drawn on the substrate P by the respective plurality of drawing lines LL1 to LL5 in the width direction of the substrate P. First, a plurality of drawing lines LL1 to LL5 (scanning tracks of spot light) formed by scanning the plurality of drawing light beams LB on the substrate P by the drawing device 11 will be described with reference to FIG.

如圖3所示,複數條描繪線LL1~LL5,夾著中心面p3於旋轉圓筒DR之周方向配置成2行。於旋轉方向上游側之基板P上,與Y軸平行的配置奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5於旋轉方向下游側之基板P上,與Y軸平行的配置偶數號之第2描繪線LL2及第4描繪線LL4。 As shown in FIG. 3, a plurality of drawing lines LL1 to LL5 are arranged in two rows in the circumferential direction of the rotating cylinder DR with the center plane p3 interposed therebetween. On the substrate P on the upstream side in the rotation direction, the odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 which are parallel to the Y-axis are parallel to the Y-axis on the substrate P on the downstream side in the rotational direction. The second drawing line LL2 and the fourth drawing line LL4 of the even number are arranged.

各描繪線LL1~LL5於基板P之寬度方向(Y方向)、也就是說沿旋轉圓筒DR之旋轉中心線AX2大致平行形成,較基板P於寬度方向之長度短。嚴謹來說,各描繪線LL1~LL5,為在藉由基板搬送機構12以基準速度搬送基板P時,以複數條描繪線LL1~LL5所得之圖案之接合誤 差為最小,可相對旋轉圓筒DR之旋轉中心線AX2延伸之方向(軸方向或寬度方向)傾斜既定角度分。 Each of the drawing lines LL1 to LL5 is formed substantially in parallel in the width direction (Y direction) of the substrate P, that is, along the rotation center line AX2 of the rotating cylinder DR, and is shorter than the length of the substrate P in the width direction. Strictly speaking, each of the drawing lines LL1 to LL5 is a bonding error of a pattern obtained by drawing a plurality of lines LL1 to LL5 when the substrate P is conveyed at the reference speed by the substrate transfer mechanism 12. The difference is the smallest, and the angle (the axial direction or the width direction) in which the rotation center line AX2 of the rotating cylinder DR extends is inclined by a predetermined angle.

奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5,於旋轉圓筒DR之中心線AX2方向相距既定間隔配置。又,偶數號之第2描繪線LL2及第4描繪線LL4,於旋轉圓筒DR之中心線AX2方向相距既定間隔配置。,此時,第2描繪線LL2係於中心線AX2方向配置在第1描繪線LL1與第3描繪線LL3之間。同樣的,第3描繪線LL3係於中心線AX2方向配置在第2描繪線LL2與第4描繪線LL4之間。第4描繪線LL4於中心線AX2方向配置在第3描繪線LL3與第5描繪線LL5之間。此外,第1~第5描繪線LL1~LL5係配置成涵蓋描繪於基板P上之曝光區域A7之寬度方向(軸方向)全寬。 The odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged at a predetermined interval in the direction of the center line AX2 of the rotating cylinder DR. Further, the even-numbered second drawing line LL2 and the fourth drawing line LL4 are arranged at a predetermined interval in the direction of the center line AX2 of the rotating cylinder DR. In this case, the second drawing line LL2 is disposed between the first drawing line LL1 and the third drawing line LL3 in the direction of the center line AX2. Similarly, the third drawing line LL3 is disposed between the second drawing line LL2 and the fourth drawing line LL4 in the direction of the center line AX2. The fourth drawing line LL4 is disposed between the third drawing line LL3 and the fifth drawing line LL5 in the center line AX2 direction. Further, the first to fifth drawing lines LL1 to LL5 are arranged to cover the full width (axial direction) of the exposure region A7 drawn on the substrate P.

沿著奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5掃描之描繪光束LB之點光之掃描方向,為一維方向、相同方向。又,沿偶數號之第2描繪線LL2及第4描繪線LL4掃描之描繪光束LB之點光之掃描方向,為一維方向、相同方向。,此時,沿奇數號描繪線LL1、LL3、LL5掃描之描繪光束LB之點光之掃描方向(+Y方向)與沿偶數號描繪線LL2、LL4掃描之描繪光束LB之點光之掃描方向(-Y方向),如圖3中之箭頭所示,為相反方向。此係因使描繪單元UW1~UW5之各個為相同構成,在使奇數號描繪單元與偶數號描繪單元於XY面內旋轉180°對向配置、且使設於各描繪單元UW1~UW5之作為光束掃描器之旋轉多邊形鏡(polygon mirror)旋轉於同一方向之故。因此,從基板P之搬送方向來看,奇數號描繪線LL3、LL5之描繪開始位置與偶數號描繪線LL2、LL4之描繪開始位置, 係於Y方向以點光之徑尺寸以下之誤差相鄰接(或一致),同樣的,奇數號描繪線LL1、LL3之描繪結束位置與偶數號描繪線LL2、LL4之描繪結束位置,係於Y方向以點光之徑尺寸以下之誤差相鄰接(或一致)。 The scanning direction of the spot light of the drawing light beam LB scanned along the odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 is one-dimensional direction and same direction. Further, the scanning direction of the spot light of the drawing light beam LB scanned along the even-numbered second drawing line LL2 and the fourth drawing line LL4 is in the one-dimensional direction and the same direction. At this time, the scanning direction (+Y direction) of the spot light of the drawing light beam LB scanned along the odd-numbered drawing lines LL1, LL3, LL5 and the scanning direction of the spot light of the drawing light beam LB scanned along the even-numbered drawing lines LL2, LL4 (-Y direction), as indicated by the arrow in Fig. 3, is the opposite direction. In this case, each of the drawing units UW1 to UW5 has the same configuration, and the odd-numbered drawing unit and the even-numbered drawing unit are arranged to rotate 180° in the XY plane, and the respective drawing units UW1 to UW5 are used as the light beams. The polygon mirror of the scanner rotates in the same direction. Therefore, the drawing start position of the odd-numbered drawing lines LL3 and LL5 and the drawing start position of the even-numbered drawing lines LL2 and LL4 are seen from the direction in which the substrate P is transported. In the Y direction, the error below the size of the spot light is adjacent (or coincident), and similarly, the drawing end position of the odd-numbered drawing lines LL1, LL3 and the drawing end position of the even-numbered drawing lines LL2, LL4 are tied to The Y direction is adjacent (or coincident) with an error below the diameter of the spot light.

如以上之說明,奇數號描繪線LL1、LL3、LL5之各個係在基板P上與旋轉圓筒DR之旋轉中心線AX2大致平行之方式,於基板P之寬度方向配置成一行。而偶數號描繪線LL2、LL4之各個係在基板P上與旋轉圓筒DR之旋轉中心線AX2大致平行之方式,於基板P之寬度方向配置成一行。 As described above, each of the odd-numbered drawing lines LL1, LL3, and LL5 is arranged in a row in the width direction of the substrate P so that the substrate P is substantially parallel to the rotation center line AX2 of the rotating cylinder DR. Each of the even-numbered drawing lines LL2 and LL4 is arranged in a row in the width direction of the substrate P so as to be substantially parallel to the rotation center line AX2 of the rotating cylinder DR on the substrate P.

其次,參照圖4至圖7說明描繪裝置11。描繪裝置11,具有上述複數個描繪單元UW1~UW5、將來自光源裝置CNT之描繪光束LB分歧後導向描繪單元UW1~UW5之分歧光學系SL、以及用以進行校準之校準檢測系31。 Next, the drawing device 11 will be described with reference to Figs. 4 to 7 . The drawing device 11 includes the plurality of drawing units UW1 to UW5, a divergent optical system SL that directs the drawing light beams LB from the light source device CNT to the drawing units UW1 to UW5, and a calibration detecting system 31 for performing calibration.

分歧光學系SL將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數條描繪光束LB分別導向複數個描繪單元UW1~UW5。分歧光學系SL,具有將從光源裝置CNT射出之描繪光束LB分歧為2條之第1光學系41、以第1光學系41分歧之一描繪光束LB射入之第2光學系42、及以第1光學系41分歧之另一描繪光束LB射入之第3光學系43。又,於分歧光學系SL之第1光學系41中設有在與描繪光束LB之進行軸正交之面內使描繪光束LB2維橫移之光束位移機構44,於分歧光學系SL之第3光學系43中設有使描繪光束LB2維橫移之光束位移機構45。分歧光學系SL,其光源裝置CNT側之一部分設置於本體框架21,另一方面,描繪單元UW1~UW5側之另一部分則設置於第2光學平台25。 The divergent optical system SL divides the drawing light beam LB emitted from the light source device CNT into a plurality of stripes, and guides the plurality of divergent drawing light beams LB to the plurality of drawing units UW1 to UW5, respectively. The divergent optical system SL has a first optical system 41 in which the drawing light beam LB emitted from the light source device CNT is divided into two, and a second optical system 42 in which the light beam LB is incident on one of the first optical systems 41, and The third optical system 43 into which the other drawing light beam LB is different from the first optical system 41 is incident. Further, the first optical system 41 of the divergent optical system SL is provided with a beam shifting mechanism 44 that traverses the drawing light beam LB2 in a plane orthogonal to the axis of the drawing light beam LB, and is the third in the divergent optical system SL. The optical system 43 is provided with a beam shifting mechanism 45 that traverses the drawing light beam LB2. The divergent optical system SL is provided on one side of the light source device CNT side on the main body frame 21, and the other on the drawing unit UW1 to UW5 side is provided on the second optical table 25.

第1光學系41,具有1/2波長板51、偏光鏡(偏光分束器)52、散光器(beam diffuser)53、第1反射鏡54、第1中繼透鏡55、第2中繼透鏡56、光束位移機構44、第2反射鏡57、第3反射鏡58、第4反射鏡59、以及第1分束器60。又,從圖4、圖5中不易理解各構件之配置關係,因此,亦參照圖6之立體圖加以說明。 The first optical system 41 includes a half-wavelength plate 51, a polarizer (polarizing beam splitter) 52, a beam diffuser 53, a first reflecting mirror 54, a first relay lens 55, and a second relay lens. 56. Beam displacement mechanism 44, second mirror 57, third mirror 58, fourth mirror 59, and first beam splitter 60. Moreover, since the arrangement relationship of each member is not easily understood from FIGS. 4 and 5, it will be described with reference to the perspective view of FIG. 6.

如圖6所示,從光源裝置CNT往+X方向射出之描繪光束LB射入1/2波長板51。1/2波長板51在描繪光束LB之入射面內可旋轉。射入1/2波長板51之描繪光束LB,其偏光方向為對應1/2波長板51之旋轉位置(角度)的既定偏光方向。通過1/2波長板51之描繪光束LB射入偏光鏡52。偏光鏡52使描繪光束LB中所含之既定偏光方向之光成分穿透,另一方面則將之外之偏光方向之光成分反射向+Y方向。因此,以偏光鏡52反射之描繪光束LB之強度,可藉由1/2波長板51及偏光鏡52之協力動作,視1/2波長板51之旋轉位置加以調整。 As shown in Fig. 6, the drawing light beam LB emitted from the light source device CNT in the +X direction is incident on the 1/2 wavelength plate 51. The 1/2 wavelength plate 51 is rotatable in the incident surface of the drawing light beam LB. The drawing light beam LB incident on the half-wavelength plate 51 has a polarization direction which is a predetermined polarization direction corresponding to the rotational position (angle) of the half-wavelength plate 51. The drawing light beam LB passing through the half-wavelength plate 51 is incident on the polarizing mirror 52. The polarizer 52 penetrates the light component of the predetermined polarization direction contained in the drawing light beam LB, and reflects the light component of the other polarization direction in the +Y direction. Therefore, the intensity of the drawing light beam LB reflected by the polarizing mirror 52 can be adjusted by the cooperative action of the half-wavelength plate 51 and the polarizing mirror 52, depending on the rotational position of the half-wavelength plate 51.

穿透過偏光鏡52之描繪光束LB之一部分(不要的光成分)照射於散光器(捕光)53。散光器53吸收射入之描繪光束LB之部分光成分,以抑制該光成分漏至外部。進一步的,亦用在進行描繪光束LB通過之各種光學系之調整作業時,由於雷射功率在最大狀態下功率過強而有危險,為使散光器53能吸收描繪光束LB之較多光成分,而改變1/2波長板51之旋轉位置(角度),以使朝向描繪單元UW1~UW5之描繪光束LB之功率大幅衰減。 A portion (the unnecessary light component) of the drawing light beam LB that has passed through the polarizer 52 is irradiated to the diffuser (light harvesting) 53. The diffuser 53 absorbs a part of the light component of the incident light beam LB that is incident to suppress the light component from leaking to the outside. Further, when the adjustment operation of various optical systems through which the drawing light beam LB passes is performed, it is dangerous because the power of the laser power is too strong in the maximum state, so that the diffuser 53 can absorb more light components of the drawing light beam LB. The rotation position (angle) of the half-wavelength plate 51 is changed so that the power of the drawing light beam LB toward the drawing units UW1 to UW5 is largely attenuated.

被偏光鏡52反射向+Y方向之描繪光束LB,因第1反射鏡54而反射向+X方向,透過第1中繼透鏡55及第2中繼透鏡56射入光束 位移機構44,到達第2反射鏡57。 The drawing beam LB reflected by the polarizer 52 in the +Y direction is reflected by the first mirror 54 in the +X direction, and is transmitted through the first relay lens 55 and the second relay lens 56. The displacement mechanism 44 reaches the second mirror 57.

第1中繼透鏡55使來自光源裝置CNT之描繪光束LB(大致平行之光束)收斂形成光束腰,第2中繼透鏡56使收斂後發散之描繪光束LB再次成為平行光束。 The first relay lens 55 converges the drawing light beam LB (substantially parallel light beam) from the light source device CNT to form a beam waist, and the second relay lens 56 causes the drawing light beam LB which is diverged after convergence to become a parallel light beam again.

光束位移機構44,如圖6所示,包含沿描繪光束LB之行進方向(+X方向)配置之2片平行平面板(石英),該平行平面板之一設置成能繞與Y軸平行之軸傾斜,另一平行平面板則設置成稜繞與Z軸平行之軸傾斜。依據各平行平面板之傾斜角度,描繪光束LB於ZY面內橫移而從光束位移機構44射出。 The beam displacement mechanism 44, as shown in FIG. 6, includes two parallel plane plates (quartz) arranged along the direction of travel (+X direction) of the drawing beam LB, one of which is disposed to be parallel to the Y axis. The axis is tilted and the other parallel plane plate is arranged such that the ribs are inclined about an axis parallel to the Z axis. The drawing light beam LB is traversed in the ZY plane and emitted from the beam displacement mechanism 44 in accordance with the inclination angle of each parallel plane plate.

之後,描繪光束LB被第2反射鏡57反射向-Y方向,到達第3反射鏡58,再被第3反射鏡58反射向-Z方向而到達第4反射鏡59。藉由第4反射鏡59,描繪光束LB被反射向+Y方向而射入第1分束器60。第1分束器60將描繪光束LB之部分光量成分反射向-X方向以導向第2光學系42,並將描繪光束LB之其餘光量成分導向第3光學系43。本實施形態中,被導向第2光學系42之描繪光束LB在之後被分配於3個描繪單元UW1、UW3、UW5,被導向第3光學系43之描繪光束LB在之後被分配於2個描繪單元UW2、UW4。因此,第1分束器60在光分割面之反射率與穿透率之比以3:2(反射率60%、穿透率40%)較佳,但不一定非如此不可,亦可以是1:1。 Thereafter, the drawing light beam LB is reflected by the second mirror 57 in the -Y direction, reaches the third mirror 58, and is reflected by the third mirror 58 in the -Z direction to reach the fourth mirror 59. By the fourth mirror 59, the drawing light beam LB is reflected in the +Y direction and enters the first beam splitter 60. The first beam splitter 60 reflects a part of the light amount component of the drawing light beam LB in the -X direction to be guided to the second optical system 42 and guides the remaining light amount component of the drawing light beam LB to the third optical system 43. In the present embodiment, the drawing light beam LB guided to the second optical system 42 is distributed to the three drawing units UW1, UW3, and UW5, and the drawing light beam LB guided to the third optical system 43 is distributed to the two drawing frames. Units UW2, UW4. Therefore, the ratio of the reflectance to the transmittance of the first beam splitter 60 on the light splitting surface is preferably 3:2 (reflectance 60%, transmittance 40%), but it is not necessarily so impossible, and may be 1:1.

此處,第3反射鏡58與第4反射鏡59係在移動機構24之旋轉軸I上相距既定間隔設置。亦即,於第3反射鏡58反射而朝向第4反射鏡59之描繪光束LB(平行光束)之中心線,係設定成與旋轉軸I一致(成 同軸)。 Here, the third mirror 58 and the fourth mirror 59 are provided at a predetermined interval from the rotation axis I of the moving mechanism 24. In other words, the center line of the drawing light beam LB (parallel beam) reflected by the third reflecting mirror 58 and directed toward the fourth reflecting mirror 59 is set to coincide with the rotating axis I. Coaxial).

又,包含第3反射鏡58至光源裝置CNT為止之構成(在圖4之Z方向上方側,以二點鍊線圍繞之部分)係設於本體框架21側,另一方面,包含第4反射鏡59至複數個描繪單元UW1~UW5之構成(在圖4之Z方向下方側,以二點鍊線圍繞之部分)係設於第2光學平台25側。由於第3反射鏡58與第4反射鏡59係設置成即使以移動機構24使第1光學平台23與第2光學平台25相對旋轉,描繪光束LB亦會與旋轉軸I同軸通過,因此從第4反射鏡59至第1分束器60之描繪光束LB之光路不會變更。從而,即使以移動機構24使第2光學平台25相對第1光學平台23旋轉,亦能將從設置在本體框架21側之光源裝置CNT射出之描繪光束LB,適當、安定的引導向設在第2光學平台25側之複數個描繪單元UW1~UW5。 In addition, the configuration including the third mirror 58 to the light source device CNT (the portion surrounded by the two-point chain line on the upper side in the Z direction in FIG. 4) is provided on the main body frame 21 side, and includes the fourth reflection. The configuration of the mirror 59 to the plurality of drawing units UW1 to UW5 (the portion surrounded by the two-dot chain line on the lower side in the Z direction of FIG. 4) is provided on the second optical table 25 side. Since the third mirror 58 and the fourth mirror 59 are provided such that the first optical stage 23 and the second optical stage 25 are relatively rotated by the moving mechanism 24, the drawing light beam LB passes through the coaxial axis I, so The optical path of the drawing beam LB of the mirror 59 to the first beam splitter 60 is not changed. Therefore, even if the second optical stage 25 is rotated by the moving mechanism 24 with respect to the first optical stage 23, the drawing light beam LB emitted from the light source device CNT provided on the main body frame 21 side can be appropriately and stably guided. 2 a plurality of drawing units UW1 to UW5 on the side of the optical table 25.

第2光學系42,將於第1光學系41之第1分束器60分歧之一方之描繪光束LB,分歧導向後述之奇數號描繪單元UW1、UW3、UW5。第2光學系42,具有第5反射鏡61、第2分束器62、第3分束器63、以及第6反射鏡64。 The second optical system 42 diverges the drawing light beam LB, which is one of the first beam splitters 60 of the first optical system 41, to the odd-numbered drawing units UW1, UW3, and UW5 to be described later. The second optical system 42 includes a fifth mirror 61, a second beam splitter 62, a third beam splitter 63, and a sixth mirror 64.

於第1光學系41之第1分束器60被反射向-X方向之描繪光束LB,被第5反射鏡61往-Y方向反射後,射入第2分束器62。射入第2分束器62之描繪光束LB,其一部分被反射向-Z方向,導向奇數號之1個描繪單元UW5(參照圖5)。穿透過第2分束器62之描繪光束LB射入第3分束器63。射入第3分束器63之描繪光束LB,其一部分被反射向-Z方向,導向奇數號之1個描繪單元UW3(參照圖5)。而穿透過第3分束器63之描繪光束LB之一部分被第6反射鏡64反射向-Z方向,導向奇數號 之1個描繪單元UW1(參照圖5)。又,於第2光學系42,照射於奇數號描繪單元UW1、UW3、UW5之描繪光束LB,相對-Z方向略微傾斜。 The first beam splitter 60 of the first optical system 41 is reflected by the drawing beam LB in the -X direction, is reflected by the fifth mirror 61 in the -Y direction, and is incident on the second beam splitter 62. A part of the drawing light beam LB incident on the second beam splitter 62 is reflected in the -Z direction, and is guided to one of the odd-numbered drawing units UW5 (see FIG. 5). The drawing light beam LB penetrating through the second beam splitter 62 is incident on the third beam splitter 63. The drawing light beam LB incident on the third beam splitter 63 is partially reflected in the -Z direction, and is guided to one of the odd-numbered drawing units UW3 (see FIG. 5). And a portion of the drawing light beam LB that has passed through the third beam splitter 63 is reflected by the sixth mirror 64 toward the -Z direction, leading to the odd number One drawing unit UW1 (see Fig. 5). Further, in the second optical system 42, the drawing light beam LB irradiated to the odd-numbered drawing units UW1, UW3, and UW5 is slightly inclined with respect to the -Z direction.

又,為有效利用描繪光束LB之功率,使第2分束器62之反射率與穿透率之比接近1:2、第3分束器63之反射率與穿透率之比接近1:1較佳。 Moreover, in order to effectively utilize the power of the drawing beam LB, the ratio of the reflectance to the transmittance of the second beam splitter 62 is close to 1:2, and the ratio of the reflectance to the transmittance of the third beam splitter 63 is close to 1: 1 is preferred.

另一方面,第3光學系43將於第1光學系41之第1分束器60分歧之另一方之描繪光束LB,分歧導向後述之偶數號描繪單元UW2、UW4。第3光學系43,具有第7反射鏡71、光束位移機構45、第8反射鏡72、第4分束器73、以及第9反射鏡74。 On the other hand, the third optical system 43 diverges the drawn light beam LB of the other of the first beam splitters 60 of the first optical system 41 to the even-numbered drawing units UW2 and UW4 to be described later. The third optical system 43 includes a seventh mirror 71, a beam shifting mechanism 45, an eighth mirror 72, a fourth beam splitter 73, and a ninth mirror 74.

於第1光學系41之第1分束器60往+Y方向穿透之描繪光束LB,被第7反射鏡71反射向+X方向,穿透光束位移機構45後射入第8反射鏡72。光束位移機構45,係以和光束位移機構44同樣之可傾斜的2片平行平面板(石英)構成,使朝向第8反射鏡72往+X方向前進之描繪光束LB於ZY面內橫移。 The drawing beam LB penetrating in the +Y direction by the first beam splitter 60 of the first optical system 41 is reflected by the seventh mirror 71 in the +X direction, passes through the beam shifting mechanism 45, and is incident on the eighth reflecting mirror 72. . The beam shifting mechanism 45 is constituted by two parallel plane plates (quartz) which are tiltable in the same manner as the beam shifting mechanism 44, and the drawing light beam LB which is advanced toward the eighth mirror 72 in the +X direction is traversed in the ZY plane.

被第8反射鏡72反射向-Y方向之描繪光束LB,射入第4分束器73。照射於第4分束器73之描繪光束LB,其一部分被反射向-Z方向,導向偶數號之1個描繪單元UW4(參照圖5)。穿透過第4分束器73之描繪光束LB,被第9反射鏡74反射向-Z方向,導向偶數號之1個描繪單元UW2。又,於第3光學系43,照射於偶數號描繪單元UW2、UW4之描繪光束LB,亦係相對-Z方向略微傾斜。 The drawing beam LB reflected by the eighth mirror 72 in the -Y direction is incident on the fourth beam splitter 73. The drawing light beam LB irradiated to the fourth beam splitter 73 is partially reflected in the -Z direction, and is guided to one of the even numbered drawing units UW4 (see FIG. 5). The drawing light beam LB that has passed through the fourth beam splitter 73 is reflected by the ninth mirror 74 in the -Z direction, and is guided to one of the even numbered drawing units UW2. Further, in the third optical system 43, the drawing light beam LB irradiated to the even-numbered drawing units UW2 and UW4 is slightly inclined with respect to the -Z direction.

如以上所述,於分歧光學系SL,朝向複數個描繪單元UW1~UW5,將來自光源裝置CNT之描繪光束LB分歧為複數條。此時,第1 分束器60、第2分束器62、第3分束器63及第4分束器73,其反射率(穿透率)係視描繪光束LB之分歧數調整為適當的反射率,以使照射於複數個描繪單元UW1~UW5之描繪光束LB之光束強度為相同強度。 As described above, in the divergent optical system SL, the drawing light beams LB from the light source device CNT are divided into a plurality of stripes toward the plurality of drawing units UW1 to UW5. At this time, the first The beam splitter 60, the second beam splitter 62, the third beam splitter 63, and the fourth beam splitter 73 have reflectance (transmission ratio) adjusted to an appropriate reflectance depending on the number of divergence of the drawing light beam LB. The beam intensity of the drawing light beam LB irradiated to the plurality of drawing units UW1 to UW5 is the same intensity.

光束位移機構44配置在第2中繼透鏡56與第2反射鏡57之間。光束位移機構44可將在基板P上形成之描繪線LL1~LL5之所有位置,在基板P之描繪面內以μm級進行微調。 The beam shifting mechanism 44 is disposed between the second relay lens 56 and the second mirror 57. The beam shifting mechanism 44 can finely adjust all the positions of the drawing lines LL1 to LL5 formed on the substrate P in the drawing plane of the substrate P in μm order.

又,光束位移機構45,可將基板P上形成之描繪線LL1~LL5中、偶數號之第2描繪線LL2及第4描繪線LL4於基板P之描繪面內以μm級進行微調。 Further, the beam shifting mechanism 45 can finely adjust the second drawing line LL2 and the fourth drawing line LL4 of the even number among the drawing lines LL1 to LL5 formed on the substrate P in the drawing plane of the substrate P in the order of μm.

進一步參照圖4、圖5及圖7,說明複數個描繪單元UW1~UW5。如圖4(及圖1)所示,複數個描繪單元UW1~UW5係夾著中心面p3於旋轉圓筒DR之周方向配置成2行。複數個描繪單元UW1~UW5,於夾著中心面p3配置第1、第3、第5描繪線LL1、LL3、LL5之側(圖5之-X方向側),配置第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5。第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5,於Y方向相距既定間隔配置。又,複數個描繪單元UW1~UW5,於夾著中心面p3配置第2、第4描繪線LL2、LL4之側(圖5之+X方向側),配置第2描繪單元UW2及第4描繪單元UW4。第2描繪單元UW2及第4描繪單元UW4,於Y方向相距既定間隔配置。此時,如之前之圖2、或圖5所示,第2描繪單元UW2,於Y方向係配置在第1描繪單元UW1與第3描繪單元UW3之間。同樣的,第3描繪單元UW3,於Y方向係配置在第2描繪單元UW2與第4描繪單元UW4之間。第4描繪單元UW4,於Y方向 配置在第3描繪單元UW3與第5描繪單元UW5之間。又,如圖4所示,第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5與第2描繪單元UW2及第4描繪單元UW4,從Y方向看,係以中心面p3為中心對稱配置。 Further, referring to Fig. 4, Fig. 5, and Fig. 7, a plurality of drawing units UW1 to UW5 will be described. As shown in FIG. 4 (and FIG. 1), a plurality of drawing units UW1 to UW5 are arranged in two rows in the circumferential direction of the rotating cylinder DR with the center plane p3 interposed therebetween. The plurality of drawing units UW1 to UW5 are disposed on the side (the -X direction side in FIG. 5) of the first, third, and fifth drawing lines LL1, LL3, and LL5 across the center plane p3, and the first drawing unit UW1 is disposed. 3 drawing unit UW3 and fifth drawing unit UW5. The first drawing unit UW1, the third drawing unit UW3, and the fifth drawing unit UW5 are arranged at a predetermined interval in the Y direction. Further, the plurality of drawing units UW1 to UW5 are disposed on the side (the +X direction side in FIG. 5) of the second and fourth drawing lines LL2 and LL4 with the center plane p3 interposed therebetween, and the second drawing unit UW2 and the fourth drawing unit are disposed. UW4. The second drawing unit UW2 and the fourth drawing unit UW4 are arranged at a predetermined interval in the Y direction. At this time, as shown in the previous FIG. 2 or FIG. 5, the second drawing unit UW2 is disposed between the first drawing unit UW1 and the third drawing unit UW3 in the Y direction. Similarly, the third drawing unit UW3 is disposed between the second drawing unit UW2 and the fourth drawing unit UW4 in the Y direction. Fourth drawing unit UW4, in the Y direction It is disposed between the third drawing unit UW3 and the fifth drawing unit UW5. Further, as shown in FIG. 4, the first drawing unit UW1, the third drawing unit UW3, the fifth drawing unit UW5, the second drawing unit UW2, and the fourth drawing unit UW4 are centered on the center plane p3 as viewed in the Y direction. Symmetrical configuration.

其次,參照圖4說明各描繪單元UW1~UW5內之光學系之構成。又,由於各描繪單元UW1~UW5為相同構成,因此以第1描繪單元UW1(以下,僅稱描繪單元UW1)為例加以說明。 Next, the configuration of the optical system in each of the drawing units UW1 to UW5 will be described with reference to Fig. 4 . In addition, since each of the drawing units UW1 to UW5 has the same configuration, the first drawing unit UW1 (hereinafter simply referred to as the drawing unit UW1) will be described as an example.

圖4所示之描繪單元UW1,為沿描繪線LL1(第1描繪線LL1)掃描描繪光束LB之點光,具備光偏向器81、偏光分束器PBS、1/4波長板82、掃描器83、彎折鏡84、f-θ透鏡系85、以及包含柱面透鏡86之Y倍率修正用光學構件(透鏡群)86B。又,與偏向分束器PBS相鄰設有校準檢測系31。 The drawing unit UW1 shown in FIG. 4 scans the spot light of the drawing light beam LB along the drawing line LL1 (first drawing line LL1), and includes a light deflector 81, a polarization beam splitter PBS, a quarter-wave plate 82, and a scanner. 83. A bending mirror 84, an f-θ lens system 85, and an Y-magnification correction optical member (lens group) 86B including a cylindrical lens 86. Further, a calibration detecting system 31 is provided adjacent to the deflecting beam splitter PBS.

光偏向器81係使用例如聲光調變器(AOM:AcoustIic Optic Modulator)。AOM係藉由是否在內部以超音波(高頻訊號)生成繞射光柵,據以在使入射之描繪光束之1次繞射光產生於既定繞射角方向之ON狀態、與不產生一次繞射光之OFF狀態進行切換的光切換元件。 The optical deflector 81 is, for example, an AOM: Acoust Iic Optic Modulator. The AOM generates a diffraction grating by ultrasonic waves (high-frequency signals) internally, so that one-time diffracted light of the incident drawing beam is generated in an ON state in a predetermined diffraction angle direction, and no diffracted light is generated. The optical switching element that switches in the OFF state.

圖1所示之控制部16,藉由進行光偏向器81之ON/OFF切換,據以高速進行描繪光束LB對基板P之投射/非投射的切換。具體而言,以分歧光學系SL分配之描繪光束LB之1個透過中繼透鏡91相對-Z方向略微傾斜的照射於光偏向器81。當將光偏向器81切換為OFF時,描繪光束LB即以傾斜狀態直進,而被設在通過光偏向器81之後之遮光板92遮光。另一方面,當將光偏向器81切換為ON時,描繪光束LB(1次繞射光) 即往-Z方向偏向,通過光偏向器81而照射於設在光偏向器81之Z方向上的偏光分束器PBS。因此,當將光偏向器81切換為ON時,描繪光束LB之點光即投射於基板P,當將光偏向器81切換為OFF時,描繪光束LB之點光不會投射於基板P。 The control unit 16 shown in FIG. 1 performs switching of the projection/non-projection of the drawing light beam LB on the substrate P at a high speed by performing ON/OFF switching of the optical deflector 81. Specifically, one of the drawing light beams LB distributed by the divergent optical system SL is irradiated to the optical deflector 81 through the relay lens 91 with a slight inclination in the -Z direction. When the optical deflector 81 is switched OFF, the drawing light beam LB is straightly moved in an inclined state, and is set to be blocked by the light shielding plate 92 passing through the optical deflector 81. On the other hand, when the optical deflector 81 is switched ON, the light beam LB is drawn (1st-order diffracted light) That is, it is deflected in the -Z direction, and is irradiated to the polarization beam splitter PBS provided in the Z direction of the optical deflector 81 by the optical deflector 81. Therefore, when the optical deflector 81 is switched ON, the spot light of the drawing light beam LB is projected on the substrate P, and when the optical deflector 81 is switched OFF, the spot light of the drawing light beam LB is not projected on the substrate P.

又,由於AOM係配置在藉由中繼透鏡91收斂之描繪光束LB之光腰的位置,因此從光偏向器81射出之描繪光束LB(1次繞射光)會發散。,為此,於光偏向器81之後設有使發散之描繪光束LB變回平行光束的中繼透鏡93。 Further, since the AOM system is disposed at the position of the optical waist of the drawing light beam LB that is converged by the relay lens 91, the drawing light beam LB (primary diffracted light) emitted from the optical deflector 81 is diverged. For this purpose, after the optical deflector 81, a relay lens 93 for changing the divergent drawing light beam LB back to the parallel light beam is provided.

偏光分束器PBS反射從光偏向器81透過中繼透鏡93照射之描繪光束LB。從偏光分束器PBS射出之描繪光束LB依1/4波長板82、掃描器83(旋轉多面鏡)、彎折鏡84、f-θ透鏡系85、Y倍率修正用光學構件86B及柱面透鏡86之順序前進,於基板P上聚光成掃描點光。 The polarization beam splitter PBS reflects the drawing light beam LB that is irradiated from the optical deflector 81 through the relay lens 93. The drawing light beam LB emitted from the polarization beam splitter PBS is based on the 1/4 wavelength plate 82, the scanner 83 (rotating polygon mirror), the bending mirror 84, the f-θ lens system 85, the Y magnification correction optical member 86B, and the cylinder surface. The order of the lenses 86 proceeds, and is concentrated on the substrate P to form spot light.

另一方面,偏光分束器PBS與設在偏光分束器PBS與掃描器83之間之1/4波長板82協力動作,投射在基板P或其下之旋轉圓筒DR外周面之描繪光束LB之反射光,依Y倍率修正用光學構件86B、柱面透鏡86、f-θ透鏡系85、彎折鏡84、掃描器83之順序反向前進,因此可使該反射光穿透。也就是說,從光偏向器81照射於偏光分束器PBS之描繪光束LB係S偏光之直線偏光的雷射光,被偏光分束器PBS反射。又,被偏光分束器PBS反射之描繪光束LB,通過1/4波長板82、掃描器83、彎折鏡84、f-θ透鏡系85、Y倍率修正用光學構件86B、柱面透鏡86照射於基板P,聚光於基板P上之描繪光束LB之點光成為圓偏光。來自基板P(或旋轉圓筒DR外周面)之反射光,藉反向前進於描繪光束LB之送光路,並再次通 過1/4波長板82,而成為P偏光之直線偏光的雷射光。因此,從基板P(或旋轉圓筒DR)到達偏光分束器PBS之反射光穿透偏光分束器PBS,透過中繼透鏡94照射於校準檢測系31之光電感測器31Cs。 On the other hand, the polarization beam splitter PBS and the quarter-wave plate 82 provided between the polarization beam splitter PBS and the scanner 83 cooperate to project a projection beam projected on the substrate P or the outer peripheral surface of the rotating cylinder DR below it. The reflected light of the LB is reversely advanced in the order of the Y-magnification correction optical member 86B, the cylindrical lens 86, the f-θ lens system 85, the bending mirror 84, and the scanner 83, so that the reflected light can be transmitted. In other words, the laser light that is irradiated to the linearly polarized light of the drawing beam LB of the polarization beam splitter PBS by the optical deflector 81 is reflected by the polarization beam splitter PBS. Further, the drawing light beam LB reflected by the polarization beam splitter PBS passes through the quarter wave plate 82, the scanner 83, the bending mirror 84, the f-θ lens system 85, the Y magnification correction optical member 86B, and the cylindrical lens 86. When the substrate P is irradiated, the spot light of the drawing light beam LB condensed on the substrate P becomes circularly polarized light. The reflected light from the substrate P (or the outer peripheral surface of the rotating cylinder DR) is forwardly advanced to the optical path of the drawing light beam LB, and is again passed. The 1/4 wavelength plate 82 is passed through, and the P-polarized linearly polarized laser light is obtained. Therefore, the reflected light from the substrate P (or the rotating cylinder DR) reaching the polarization beam splitter PBS passes through the polarization beam splitter PBS, and is irradiated to the photodetector 31Cs of the calibration detecting system 31 through the relay lens 94.

如前所述,偏光向分束器PBS係配置在包含掃描器83之掃描光學系與校準檢測系31之間的光分割器。由於校準檢測系31共用多數將描繪光束LB送往基板P之送光光學系的一部分,因此係一簡易且精巧的光學系。 As described above, the polarized light is disposed in the beam splitter PBS system in the optical splitter including the scanning optical system of the scanner 83 and the calibration detecting system 31. Since the calibration detecting system 31 shares a part of the majority of the light transmitting optical system that sends the drawing light beam LB to the substrate P, it is a simple and compact optical system.

如圖4及圖7所示,掃描器83具有反射鏡96、旋轉多面鏡(旋轉多面鏡)97、與原點檢測器98。通過1/4波長板82之描繪光束LB(平行光束),透過柱面透鏡95被反射鏡96在XY面內反射,照射於旋轉多面鏡97。旋轉多面鏡97包含延伸於Z方向之旋轉軸97a、與形成在旋轉軸97a周圍之複數個反射面97b而構成。旋轉多面鏡97,藉由以旋轉軸97a為中心往既定旋轉方向旋轉,據以使照射於反射面97b之描繪光束LB(經光偏向器81強度調變之光束)之反射角在XY面內連續變化,據此,反射之描繪光束LB即因彎折鏡84、f-θ透鏡系85、第2柱面透鏡86(及Y倍率修正用光學構件86B)而聚光成點光,沿基板P上之描繪線LL1(同樣的,沿LL2~LL5)掃描。原點檢測器98係檢測沿基板P之描繪線LL1(同樣的,沿LL2~LL5)掃描之描繪光束LB之原點。原點檢測器98,夾著於各反射面97b反射之描繪光束LB,配置在反射鏡96之相反側。 As shown in FIGS. 4 and 7, the scanner 83 has a mirror 96, a rotating polygon mirror (rotating polygon mirror) 97, and an origin detector 98. The drawing light beam LB (parallel light beam) passing through the quarter-wavelength plate 82 is reflected by the mirror 96 through the cylindrical lens 95 in the XY plane, and is irradiated onto the rotating polygon mirror 97. The rotating polygon mirror 97 includes a rotating shaft 97a extending in the Z direction and a plurality of reflecting surfaces 97b formed around the rotating shaft 97a. The rotating polygon mirror 97 is rotated in a predetermined rotation direction about the rotation axis 97a, so that the reflection angle of the drawing light beam LB (the light beam modulated by the intensity of the light deflector 81) irradiated on the reflection surface 97b is in the XY plane. According to this, the reflected drawing light beam LB is condensed into spot light by the bending mirror 84, the f-θ lens system 85, and the second cylindrical lens 86 (and the Y magnification correction optical member 86B) along the substrate. The drawing line LL1 on P (samely, along LL2~LL5) is scanned. The origin detector 98 detects the origin of the drawing light beam LB scanned along the drawing line LL1 of the substrate P (samely, along LL2 to LL5). The origin detector 98 is disposed on the opposite side of the mirror 96 with the drawing light beam LB reflected by the respective reflecting surfaces 97b.

圖7中,為簡化說明,原點檢測器98雖僅圖示光電檢測器,但實際上,設有朝向描繪光束LB投射之旋轉多面鏡97之反射面97b投射檢測用光束之LED及半導體雷射等的檢測用光源,原點檢測器98對該檢測 用光束於反射面97b之反射光透過細狹縫進行光電檢測。 In FIG. 7, for the sake of simplification of description, the origin detector 98 is merely a photodetector, but actually, an LED and a semiconductor beam that project a light beam for detection are provided on the reflecting surface 97b of the rotating polygon mirror 97 projected toward the drawing light beam LB. a light source for detection such as shooting, the origin detector 98 detects the light The reflected light of the light beam on the reflecting surface 97b is transmitted through the thin slit for photoelectric detection.

據此,原點檢測器98被設定為相對點光照射於基板P上之描繪線LL1(LL2~LL5)之描繪開始位置的時間點,恆早一定時間,輸出表示原點之脈衝訊號。 As a result, the origin detector 98 is set to output a pulse signal indicating the origin at a time when the spot light is irradiated onto the drawing start position of the drawing line LL1 (LL2 to LL5) on the substrate P.

從掃描器83照射於彎折鏡84之描繪光束LB被彎折鏡84反射向-Z方向,射入f-θ透鏡系85、柱面透鏡86(及Y倍率修正用光學構件86B)。 The drawing light beam LB irradiated from the scanner 83 to the bending mirror 84 is reflected by the bending mirror 84 in the -Z direction, and is incident on the f-θ lens system 85 and the cylindrical lens 86 (and the Y magnification correction optical member 86B).

當旋轉多面鏡97之各反射面97b相對旋轉軸97a之中心線非嚴謹的平行、而是略微傾斜(面傾斜)時,投射在基板P上之點光形成之描繪線(LL1~LL5),會就每一反射面97b在基板P上於X方向偏移。因此,使用圖8,說明藉由2個柱面透鏡95、86之設置,針對旋轉多面鏡97之各反射面97b之面傾斜,降低或消除描繪線LL1~LL5往X方向之偏移情形。 When the respective reflecting surfaces 97b of the rotating polygon mirror 97 are not strictly parallel with respect to the center line of the rotating shaft 97a, but are slightly inclined (face inclined), the drawing lines (LL1 to LL5) formed by the spot light projected on the substrate P, Each of the reflecting surfaces 97b is offset on the substrate P in the X direction. Therefore, with reference to Fig. 8, it is explained that the surface of each of the reflecting surfaces 97b of the rotating polygon mirror 97 is inclined by the arrangement of the two cylindrical lenses 95 and 86, and the deviation of the drawing lines LL1 to LL5 in the X direction is reduced or eliminated.

圖8之左側顯示將柱面透鏡95、掃描器83、f-θ透鏡系85、柱面透鏡86之光路展開於XY平面之狀態,圖8之右側則顯示將該光路於XZ平面內展開的狀態。作為基本的光學配置,旋轉多面鏡97之被描繪光束LB照射之反射面97b係配置成位於f-θ透鏡系85之入射光瞳位置(前側焦點位置)。據此,相對旋轉多面鏡97之旋轉角θ p/2,射入f-θ透鏡系85之描繪光束LB之入射角成為θ p,與該入射角θ p成正比決定投射於基板P(被照射面)上之點光之像高位置。又,藉由將反射面97b配置在f-θ透鏡系85之前側焦點位置,投射於基板P之描繪光束LB在描繪線上之任何位置下皆成為遠心狀態(為點光之描繪光束之主光線恆與f-θ透鏡 系85之光軸AXf成平行的狀態)。 The left side of Fig. 8 shows the state in which the optical paths of the cylindrical lens 95, the scanner 83, the f-θ lens system 85, and the cylindrical lens 86 are developed on the XY plane, and the right side of Fig. 8 shows the optical path developed in the XZ plane. status. As a basic optical arrangement, the reflecting surface 97b of the rotating polygon mirror 97 illuminated by the drawn light beam LB is disposed at the entrance pupil position (front focus position) of the f-θ lens system 85. Accordingly, the angle of incidence of the drawing beam LB incident on the f-θ lens system 85 becomes θ p with respect to the rotation angle θ p/2 of the rotating polygon mirror 97, and is proportional to the incident angle θ p to be projected on the substrate P ( The image height position on the illuminated surface). Further, by arranging the reflection surface 97b at the front focus position of the f-θ lens system 85, the drawing light beam LB projected on the substrate P becomes a telecentric state at any position on the drawing line (the chief ray of the drawing light beam for the point light) Constant and f-theta lens The optical axis AXf of the system 85 is in a parallel state).

如圖8所示,2個柱面透鏡95、86在與旋轉多面鏡97之旋轉軸97a垂直之面(XY面)內,皆做為折射力(power)為零之平行平板玻璃發揮其功能,於旋轉軸97a延伸之Z方向(XZ面內)則作為具有一定之正折射力的凸透鏡發揮其功能。射入第1柱面透鏡95之描繪光束LB(大致平行光束)之剖面形狀雖為數mm程度之圓形,但當將柱面透鏡95在XZ面內之焦點位置透過反射鏡96設定在旋轉多面鏡97之反射面97b上時,於XY面內即具有數mm之光束寬度,於Z方向則由收斂之狹縫狀點光在反射面97b上延伸於旋轉方向聚光。 As shown in Fig. 8, the two cylindrical lenses 95, 86 are in the plane perpendicular to the rotation axis 97a of the rotating polygon mirror 97 (XY plane), and function as a parallel plate glass having a refractive power of zero. The Z direction (in the XZ plane) in which the rotation shaft 97a extends is a function as a convex lens having a certain positive refractive power. The cross-sectional shape of the drawing light beam LB (substantially parallel light beam) incident on the first cylindrical lens 95 is circular to the extent of several mm, but the focal position of the cylindrical lens 95 in the XZ plane is set to the rotating multi-face by the mirror 96. When the reflection surface 97b of the mirror 97 is placed, it has a beam width of several mm in the XY plane, and in the Z direction, the converged slit-like spot light is concentrated on the reflection surface 97b in the rotation direction.

於旋轉多面鏡97之反射面97b反射之描繪光束LB,在XY面內雖為平行光束,但在XZ面內(旋轉軸97a延伸之方向)則係成為發散光束射入f-θ透鏡系85。因此,從f-θ透鏡系85射出後之描繪光束LB,在XZ面內(旋轉軸97a延伸之方向)雖大致為平行光束,但因第2柱面透鏡86之作用,在XZ面內、亦即在基板P上在與描繪線LL1~LL5延伸之方向正交之基板P之搬送方向,亦係聚光為點光。其結果,於基板P上之各描繪線上,投射圓形之小點光。 The drawing light beam LB reflected by the reflecting surface 97b of the rotating polygon mirror 97 is a parallel beam in the XY plane, but in the XZ plane (the direction in which the rotating shaft 97a extends), the divergent beam is incident on the f-θ lens system 85. . Therefore, the drawing light beam LB emitted from the f-θ lens system 85 is substantially parallel to the light beam in the XZ plane (the direction in which the rotating shaft 97a extends), but in the XZ plane by the action of the second cylindrical lens 86, That is, the direction in which the substrate P is orthogonal to the direction in which the drawing lines LL1 to LL5 extend in the substrate P is also collected as spot light. As a result, a circular small spot light is projected on each of the drawing lines on the substrate P.

藉由柱面透鏡86之設置,如圖8之右側所示,於XZ面內,可將旋轉多面鏡97之反射面97b與基板P(被照射面)設定成光學上像共軛關係。因此,即使旋轉多面鏡97之各反射面97b相對與描繪光束LB之掃描方向正交之非掃描方向(旋轉軸97a延伸之方向)具有傾斜誤差,基板P上之描繪線(LL1~LL5)之位置,亦不會偏移於點光之非掃描方向(基板P之搬送方向)。如上所述,藉由在旋轉多面鏡97之前與後設置柱面透 鏡95、86,即能構成對非掃描方向之多面反射面之面傾斜修正光學系。 By the arrangement of the cylindrical lens 86, as shown on the right side of Fig. 8, in the XZ plane, the reflecting surface 97b of the rotating polygon mirror 97 and the substrate P (irradiated surface) can be set in an optically conjugated relationship. Therefore, even if the respective reflecting surfaces 97b of the rotating polygon mirror 97 have a tilt error with respect to the non-scanning direction (the direction in which the rotating shaft 97a extends) orthogonal to the scanning direction of the drawing light beam LB, the drawing lines (LL1 to LL5) on the substrate P are The position is also not shifted to the non-scanning direction of the spot light (the transport direction of the substrate P). As described above, by setting the cylinder surface before and after rotating the polygon mirror 97 The mirrors 95 and 86 are configured to form a face tilt correction optical system for a multi-faceted reflecting surface in a non-scanning direction.

次處,如圖7所示,複數個描繪單元UW1~UW5之各掃描器83係相對中心面p3成對稱構成。複數個掃描器83,其與描繪單元UW1、UW3、UW5對應之3個掃描器83係配置在旋轉圓筒DR之旋轉方向上游側(圖7之-X方向側),與描繪單元UW2、UW4對應之2個掃描器83則配置在旋轉圓筒DR之旋轉方向下游側(圖7之+X方向側)。而上游側之3個掃描器83與下游側之2個掃描器83係夾著中心面p3對向配置。如此,上游側之3個掃描器83與下游側之2個掃描器83係以旋轉軸I(Z軸)為中心旋轉180°之配置關係。因此,當上游側之3個旋轉多面鏡97例如一邊向左旋轉、一邊於旋轉多面鏡97照射描繪光束LB時,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置往既定掃描方向(例如圖7之+Y方向)掃描。另一方面,當下游側之2個旋轉多面鏡97一邊往左旋轉、一邊於旋轉多面鏡97照射描繪光束LB時,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置,往與上游側之3個旋轉多面鏡97’相反之掃描方向(例如圖7之-Y方向)掃描。 In the second place, as shown in Fig. 7, each of the scanners 83 of the plurality of drawing units UW1 to UW5 is symmetrically formed with respect to the center plane p3. The plurality of scanners 83 are disposed on the upstream side in the rotation direction of the rotating cylinder DR (the -X direction side in FIG. 7), and the drawing units UW2, UW4, and the three scanners 83 corresponding to the drawing units UW1, UW3, and UW5. The corresponding two scanners 83 are disposed on the downstream side in the rotation direction of the rotary cylinder DR (the +X direction side in Fig. 7). On the other hand, the three scanners 83 on the upstream side and the two scanners 83 on the downstream side are arranged to face each other with the center plane p3 interposed therebetween. In this manner, the three scanners 83 on the upstream side and the two scanners 83 on the downstream side are arranged to rotate by 180° around the rotation axis I (Z axis). Therefore, when the three rotating polygon mirrors 97 on the upstream side are rotated to the left, for example, when the drawing polygon beam 97 is irradiated to the rotating polygon mirror 97, the drawing light beam LB reflected by the rotating polygon mirror 97 is moved from the drawing start position to the drawing end position. Scan in the given scanning direction (for example, the +Y direction of Figure 7). On the other hand, when the two rotating polygon mirrors 97 on the downstream side rotate to the left and the drawing beam LB is irradiated to the rotating polygon mirror 97, the drawing beam LB reflected by the rotating polygon mirror 97 ends from the drawing start position toward the drawing. The position is scanned in the scanning direction (for example, the -Y direction of FIG. 7) opposite to the three rotating polygon mirrors 97' on the upstream side.

此處,於圖4之XZ面內觀察時,從奇數號描繪單元UW1、UW3、UW5到達基板P之描繪光束LB之軸線,係與設置方位線Le1一致之方向。也就是說,設置方位線Le1,於XZ面內,係連結奇數號描繪線LL1、LL3、LL5與旋轉中心線AX2之線。同樣的,於圖4之XZ面內觀察時,從偶數號描繪單元UW2、UW4到達基板P之描繪光束LB之軸線,係與設置方位線Le2一致之方向。也就是說,設置方位線Le2,於XZ面內,係連結偶數號描繪線LL2、LL4與旋轉中心線AX2之線。因此,於基板P成點光 投射之描繪光束LB之各行進方向(主光線),皆係設定成朝向旋轉圓筒DR之旋轉中心線AX2。 Here, when viewed in the XZ plane of FIG. 4, the axis of the drawing light beam LB that reaches the substrate P from the odd-numbered drawing units UW1, UW3, and UW5 is in the direction in which the orientation line Le1 is set. That is, the orientation line Le1 is set, and the line connecting the odd-numbered drawing lines LL1, LL3, LL5 and the rotation center line AX2 is connected in the XZ plane. Similarly, when viewed in the XZ plane of FIG. 4, the axis of the drawing light beam LB that reaches the substrate P from the even-numbered drawing units UW2 and UW4 is in the direction in which the orientation line Le2 is set. That is to say, the orientation line Le2 is set, and the line connecting the even-numbered drawing lines LL2, LL4 and the rotation center line AX2 is connected in the XZ plane. Therefore, the substrate P is spotlighted The respective traveling directions (principal rays) of the projected drawing light beam LB are set to be toward the rotation center line AX2 of the rotating cylinder DR.

Y倍率修正用光學構件86B配置在f-θ透鏡系85與基板P之間。Y倍率修正用光學構件86B,可使以各描繪單元UW1~UW5形成之描繪線LL1~LL5,於Y方向,等方的微幅放大或縮小。 The Y magnification correction optical member 86B is disposed between the f-θ lens system 85 and the substrate P. In the Y magnification correction optical member 86B, the drawing lines LL1 to LL5 formed by the respective drawing units UW1 to UW5 can be slightly enlarged or reduced in the Y direction.

具體而言,可使用將涵蓋描繪線LL1~LL5之各個之一定厚度之穿透性平行平面板(石英)於描繪線延伸之方向機械性的加以彎曲(bending)以使描繪線之Y方向倍率(掃描長)可變的機構,或使凸透鏡、凹透鏡、凸透鏡之3群透鏡系之一部分於光軸方向移動以使描繪線之Y方向倍率(掃描長)可變的機構等。 Specifically, a penetrating parallel plane plate (quartz) having a certain thickness covering each of the drawing lines LL1 to LL5 can be mechanically bent in the direction in which the drawing line extends to make the Y-direction magnification of the drawing line. (Scanning length) a variable mechanism, or a mechanism in which one of the three lens systems of the convex lens, the concave lens, and the convex lens is moved in the optical axis direction to make the Y-direction magnification (scan length) of the drawing line variable.

以此方式構成之描繪裝置11,由控制部16控制各部於基板P上描繪既定圖案。也就是說,控制部16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊,藉由對光偏向器81進行ON/OFF調變據以使描繪光束LB偏向,以於基板P之光感應層上描繪出圖案。又,控制部16使沿描繪線LL1掃描之描繪光束LB之掃描方向、與基板P藉由旋轉圓筒DR之旋轉往搬送方向之移動同步,據以在曝光區域A7中對應描繪線LL1之部分描繪既定圖案。 In the drawing device 11 configured in this manner, the control unit 16 controls each unit to draw a predetermined pattern on the substrate P. In other words, the control unit 16 performs ON/OFF modulation of the optical deflector 81 in accordance with the CAD information of the pattern to be drawn on the substrate P during the scanning of the drawing light beam LB projected on the substrate P in the scanning direction. The drawing light beam LB is biased to draw a pattern on the light sensing layer of the substrate P. Further, the control unit 16 synchronizes the scanning direction of the drawing light beam LB scanned along the drawing line LL1 with the movement of the substrate P by the rotation of the rotating cylinder DR in the conveying direction, and accordingly corresponds to the portion of the drawing line LL1 in the exposure area A7. Depicts a given pattern.

其次,一併參照圖3與圖9,說明對準顯微鏡AM1、AM2。對準顯微鏡AM1、AM2檢測預先形成在基板P上之對準標記、或形成在旋轉圓筒DR上之基準標記及基準圖案等。以下,將基板P之對準標記及旋轉圓筒DR之基準標記及基準圖案,僅簡稱為標記。對準顯微鏡AM1、AM2係用於進行基板P與描繪在基板P上之既定圖案之位置對準、或旋轉圓筒 DR與描繪裝置11之校準。 Next, the alignment microscopes AM1 and AM2 will be described with reference to FIGS. 3 and 9. The alignment marks previously formed on the substrate P or the reference marks and reference patterns formed on the rotating cylinder DR are detected by the alignment microscopes AM1 and AM2. Hereinafter, the alignment mark of the substrate P and the reference mark and the reference pattern of the rotating cylinder DR are simply referred to as marks. The alignment microscopes AM1, AM2 are used to align the substrate P with the predetermined pattern drawn on the substrate P, or to rotate the cylinder Calibration of the DR and the rendering device 11.

對準顯微鏡AM1、AM2,較以描繪裝置11形成之描繪線LL1~LL5,設置在旋轉圓筒DR之旋轉方向(基板P之搬送方向)上游側。又,對準顯微鏡AM1較對準顯微鏡AM2配置在旋轉圓筒DR之旋轉方向上游側。 The alignment microscopes AM1 and AM2 are disposed on the upstream side of the rotation direction of the rotary cylinder DR (the conveyance direction of the substrate P) from the drawing lines LL1 to LL5 formed by the drawing device 11. Further, the alignment microscope AM1 is disposed on the upstream side in the rotation direction of the rotary cylinder DR than the alignment microscope AM2.

對準顯微鏡AM1、AM2,係由將照明光投射於基板P或旋轉圓筒DR並射入於標記產生之光之作為檢測探針的對物透鏡系GA(圖9中僅代表性的顯示對準顯微鏡AM2之對物透鏡系GA4)、以及將透過對物透鏡系GA受光之標記之像(亮視野像、暗視野像、螢光像等)以2維CCD、CMOS等加以拍攝的攝影系GD(圖9中僅代表性的顯示對準顯微鏡AM2之拍攝GD4)等構。又,對準用之照明光係對基板P上之光感應層幾乎不具有感度之波長帶之光、例如波長500~800nm程度光。 The alignment microscopes AM1 and AM2 are a pair of objective lens systems GA as detection probes for projecting illumination light onto the substrate P or the rotating cylinder DR and incident on the light generated by the mark (only representative display pairs in FIG. 9) The objective lens system GA4) of the quasi-microscope AM2 and the image system (such as a bright field image, a dark field image, a fluorescent image, etc.) that is transmitted through the object lens system GA are imaged by a two-dimensional CCD or CMOS. GD (only a representative GD4 of the alignment microscope AM2 is shown in Fig. 9) is equivalent. Further, the illumination light for alignment is light having a wavelength band of almost no sensitivity to the photo-sensing layer on the substrate P, for example, light having a wavelength of 500 to 800 nm.

對準顯微鏡AM1於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。同樣的,對準顯微鏡AM2於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。也就是說,對準顯微鏡AM1、AM2合計設有6個。 The alignment microscope AM1 is arranged in a plurality of rows (for example, three) in the Y direction (the width direction of the substrate P). Similarly, the alignment microscope AM2 is arranged in a plurality of rows (for example, three) in the Y direction (the width direction of the substrate P). That is to say, six alignment microscopes AM1 and AM2 are provided in total.

圖3中,為亦於理解,於6個對準顯微鏡AM1、AM2之各對物透鏡系GA中,顯示3個對準顯微鏡AM1之各對物透鏡系GA1~GA3之配置。3個對準顯微鏡AM1之各對物透鏡系GA1~GA3對基板P(或旋轉圓筒DR之外周面)上之觀察區域(檢測位置)Vw1~Vw3,如圖3所示,係在與旋轉中心線AX2平行之Y方向,以既定間隔配置。如圖9所示,通過各觀察區域Vw1~Vw3中心之各對物透鏡系GA1~GA3之光軸La1~ La3,皆與XZ面平行。同樣的,3個對準顯微鏡AM2之各對物透鏡系GA對基板P(或旋轉圓筒DR之外周面)上之觀察區域Vw4~Vw6,如圖3所示,在與旋轉中心線AX2平行之Y方向,以既定間隔配置。如圖9所示,通過各觀察區域Vw4~Vw6中心之各對物透鏡系GA之光軸La4~La6,亦皆與XZ面平行。而觀察區域Vw1~Vw3與觀察區域Vw4~Vw6,係於旋轉圓筒DR之旋轉方向以既定間隔配置。 In FIG. 3, it is also understood that the arrangement of the respective pair of lens lenses GA1 to GA3 of the three alignment microscopes AM1 is displayed in each of the pair of alignment lens systems GA of the six alignment microscopes AM1 and AM2. The observation areas (detection positions) Vw1 to Vw3 on the substrate P (or the outer peripheral surface of the rotating cylinder DR) of the alignment lens units GA1 to GA3 of the three alignment microscopes AM1 are as shown in FIG. The center line AX2 is parallel to the Y direction and is arranged at a predetermined interval. As shown in FIG. 9, the optical axis La1~ of each of the pair of objective lens systems GA1 to GA3 passing through the center of each observation region Vw1 to Vw3 La3, both parallel to the XZ plane. Similarly, the observation areas Vw4 to Vw6 on the substrate P (or the outer peripheral surface of the rotating cylinder DR) of the three alignment microscopes AM2 are parallel to the rotation center line AX2 as shown in FIG. The Y direction is configured at regular intervals. As shown in Fig. 9, the optical axes La4 to La6 passing through the respective objective lens systems GA at the centers of the respective observation regions Vw4 to Vw6 are also parallel to the XZ plane. The observation areas Vw1 to Vw3 and the observation areas Vw4 to Vw6 are arranged at predetermined intervals in the rotation direction of the rotary cylinder DR.

此對準顯微鏡AM1、AM2對標記之觀察區域Vw1~Vw6,係於基板P及旋轉圓筒DR上,例如設定在500~200μm對角程度之範圍。此處,對準顯微鏡AM1之光軸La1~La3、亦即對物透鏡系GA之光軸La1~La3,係設定成與從旋轉中心線AX2延伸於旋轉圓筒DR之徑方向之設置方位線Le3相同方向。如此,設置方位線Le3,於圖9之XZ面內觀察時,係連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線。同樣的,對準顯微鏡AM2之光軸La4~La6、亦即對物透鏡系GA之光軸La4~La6,係設定成與從旋轉中心線AX2延伸於旋轉圓筒DR之徑方向之設置方位線Le4相同方向。如此,設置方位線Le4,於圖9之XZ面內觀察時,係連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線。此時,對準顯微鏡AM1由於與對準顯微鏡AM2相較係配置在旋轉圓筒DR之旋轉方向上游側,因此中心面p3與設置方位線Le3所成之角度,較中心面p3與設置方位線Le4所成之角度大。 The alignment areas Vw1 to Vw6 of the alignment microscopes AM1 and AM2 are attached to the substrate P and the rotating cylinder DR, and are set, for example, in the range of 500 to 200 μm diagonal. Here, the optical axes La1 to La3 of the alignment microscope AM1, that is, the optical axes La1 to La3 of the objective lens system GA are set to be arranged in a radial direction extending from the rotation center line AX2 to the radial direction of the rotating cylinder DR. Le3 is in the same direction. In this manner, the azimuth line Le3 is set to be aligned with the line of the observation area Vw1 to Vw3 of the microscope AM1 and the rotation center line AX2 when viewed in the XZ plane of FIG. Similarly, the optical axes La4 to La6 of the alignment microscope AM2, that is, the optical axes La4 to La6 of the objective lens system GA are set to be in a direction of the radial direction extending from the rotation center line AX2 to the rotation cylinder DR. Le4 is in the same direction. In this manner, the azimuth line Le4 is set to be aligned with the line of the observation area Vw4 to Vw6 of the microscope AM2 and the rotation center line AX2 when viewed in the XZ plane of FIG. At this time, the alignment microscope AM1 is disposed on the upstream side in the rotation direction of the rotary cylinder DR as compared with the alignment microscope AM2, so that the angle formed by the center plane p3 and the set orientation line Le3 is higher than the center plane p3 and the set orientation line. Le4 has a large angle.

於基板P上,如圖3所示,以5個描繪線LL1~LL5之各個描繪之曝光區域A7,於X方向相距既定間隔配置。於基板P上之曝光區域A7周圍,有用以進行位置對準之複數個對準標記Ks1~Ks3(以下,簡稱標 記),例如形成為十字狀。 On the substrate P, as shown in FIG. 3, the exposure regions A7 drawn by the respective five drawing lines LL1 to LL5 are arranged at a predetermined interval in the X direction. Around the exposure area A7 on the substrate P, a plurality of alignment marks Ks1 to Ks3 for positioning are used (hereinafter, referred to as the standard) Note), for example, formed in a cross shape.

圖3中,標記Ks1係在曝光區域A7之-Y側周邊區域於X方向以一定間隔設置,標記Ks3在曝光區域A7之+Y側周邊區域於X方向以一定間隔設置。進一步的,標記Ks2,在X方向相鄰之2個曝光區域A7間之空白區域中,設在Y方向之中央。 In Fig. 3, the mark Ks1 is provided at a constant interval in the X direction in the peripheral region on the -Y side of the exposure region A7, and the mark Ks3 is provided at a constant interval in the X direction in the peripheral region on the +Y side of the exposure region A7. Further, the mark Ks2 is provided in the center of the Y direction in the blank area between the two exposure areas A7 adjacent in the X direction.

標記Ks1,係以在對準顯微鏡AM1之對物透鏡系GA1之觀察區域Vw1內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw4內,於基板P之搬送期間能被依序捕捉之方式形成。又,標記Ks3,係以在對準顯微鏡AM1之對物透鏡系GA3之觀察區域Vw3內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw6內,於基板P之搬送期間能被依序捕捉之方式形成。進一步的,標記Ks2,係以分別在對準顯微鏡AM1之對物透鏡系GA2之觀察區域Vw2內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw5內,於基板P之搬送期間被依序捕捉之方式形成。 The mark Ks1 can be sequentially captured during the transfer of the substrate P in the observation region Vw1 of the alignment lens system GA1 of the alignment microscope AM1 and in the observation region Vw4 of the alignment lens system GA of the alignment microscope AM2. The way it is formed. Further, the mark Ks3 can be used in the observation region Vw3 of the alignment lens system GA3 of the alignment microscope AM1 and in the observation region Vw6 of the alignment lens system GA of the alignment microscope AM2 during the transfer period of the substrate P. The way of sequence capture is formed. Further, the mark Ks2 is respectively in the observation region Vw2 of the alignment lens system GA2 of the alignment microscope AM1 and in the observation region Vw5 of the alignment lens system GA of the alignment microscope AM2, during the transfer period of the substrate P. Formed in the same way.

因此,3個對準顯微鏡AM1、AM2中之旋轉圓筒DR之Y方向兩側之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在基板P之寬度方向兩側之標記Ks1、Ks3。此外,3個對準顯微鏡AM1、AM2中之旋轉圓筒DR之Y方向中央之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在形成在描繪於基板P上之曝光區域A7彼此間之空白部等之標記Ks2。 Therefore, the alignment microscopes AM1 and AM2 on both sides of the Y-direction of the rotating cylinder DR of the three alignment microscopes AM1 and AM2 can observe or detect the marks Ks1 and Ks3 formed on both sides in the width direction of the substrate P at any time. Further, the alignment microscopes AM1 and AM2 in the center of the Y direction of the rotating cylinder DR in the alignment microscopes AM1 and AM2 can observe or detect the gaps formed between the exposure regions A7 formed on the substrate P at any time. Mark Ks2.

此處,曝光裝置EX係所謂的多光束型描繪裝置,因此為了將以複數個描繪單元UW1~UW5之各描繪線LL1~LL5於基板P上描繪之複數個圖案彼此於Y方向適當的加以接合,用以將複數個描繪單元UW1~UW5之接合精度抑制在容許範圍內之校準是必須的。此外,對準顯微鏡 AM1、AM2對複數個描繪單元UW1~UW5之各描繪線LL1~LL5之觀察區域Vw1~Vw6之相對位置關係,須以基準線管理加以精密的求出。為進行此基準線管理,亦須校準。 Here, since the exposure apparatus EX is a so-called multi-beam type drawing apparatus, a plurality of patterns drawn on the substrate P by the respective drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5 are appropriately joined to each other in the Y direction. It is necessary to calibrate the joint precision of the plurality of drawing units UW1 to UW5 within an allowable range. In addition, the alignment microscope The relative positional relationship between the observation areas Vw1 to Vw6 of the respective drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5 by AM1 and AM2 must be accurately determined by the reference line management. Calibration is also required for this baseline management.

於用以確認複數個描繪單元UW1~UW5之接合精度的校準、用以進行對準顯微鏡AM1、AM2之基準線管理之校準中,須於支承基板P之旋轉圓筒DR外周面之至少一部設置基準標記或基準圖案。因此,如圖10所示,於曝光裝置EX,係使用在外周面設有基準標記或基準圖案之旋轉圓筒DR。 In the calibration for confirming the joint precision of the plurality of drawing units UW1 to UW5 and the alignment for managing the alignment lines of the alignment microscopes AM1 and AM2, at least one of the outer peripheral surfaces of the rotating cylinder DR of the support substrate P is required. Set the fiducial mark or datum pattern. Therefore, as shown in FIG. 10, in the exposure apparatus EX, the rotating cylinder DR in which the reference mark or the reference pattern is provided in the outer peripheral surface is used.

旋轉圓筒DR於其外周面之兩端側,如圖3、圖9所示同樣形成有構成後述旋轉位置檢測機構14之一部分之標尺部GPa、GPb。又,旋轉圓筒DR,於標尺部GPa、GPb之內側,於全周刻設有由凹狀槽、或凸狀邊緣構成之寬度窄的限制帶CLa、CLb。基板P之Y方向寬度被設定為校該2條限制帶CLa、CLb之Y方向間隔小,基板P係在旋轉圓筒DR之外周面中、緊貼以限制帶CLa、CLb所夾之內側區域而被支承。 As shown in Figs. 3 and 9, the rotating cylinder DR has the scale portions GPa and GPb constituting one of the rotational position detecting mechanisms 14 to be described later, as shown in Figs. 3 and 9 . Further, the rotating cylinder DR is provided with restriction bands CLa and CLb having narrow widths formed by concave grooves or convex edges on the inner side of the scale portions GPa and GPb. The width of the substrate P in the Y direction is set such that the interval between the two restriction bands CLa and CLb in the Y direction is small, and the substrate P is placed on the outer peripheral surface of the rotating cylinder DR so as to be in close contact with the inner region sandwiched by the band CLa and CLb. It is supported.

旋轉圓筒DR,在以限制帶CLa、CLb所夾之外周面,設有將相對旋轉中心線AX2以+45度傾斜之複數個線圖案RL1(線圖案)、與相對旋轉中心線AX2以-45度傾斜之複數個線圖案RL2(線圖案)以一定間距(週期)Pf1、Pf2重複刻設之網格狀的基準圖案(亦可利用為基準標記)RMP。又,線圖案RL1及線圖案RL2之寬度為LW。 The rotating cylinder DR is provided with a plurality of line patterns RL1 (line patterns) inclined at +45 degrees with respect to the rotation center line AX2 and a relative rotation center line AX2 at the outer circumferential surface of the restriction belts CLa and CLb. A plurality of line patterns RL2 (line patterns) inclined at 45 degrees are repeatedly arranged in a grid-like reference pattern (may also be used as a reference mark) RMP at regular intervals (periods) Pf1 and Pf2. Moreover, the width of the line pattern RL1 and the line pattern RL2 is LW.

基準圖案RMP,為避免在基板P與旋轉圓筒DR外周面之接觸部分產生摩擦力或基板P之張力等之變化,係全面均一之斜圖案(斜格子狀圖案)。又,線圖案RL1、RL2並不一定必須是傾斜45度,亦可以是 將線圖案RL1作成與Y軸平行、線圖案RL2作成與X軸平行之縱橫的網格狀圖案。此外,不一定須使線圖案RL1、RL2以90度交叉,亦可使相鄰之2條線圖案RL1與相鄰之2條線圖案RL2所圍成之矩形區域,以成為正方形(或長方形)以外之菱形的角度使線圖案RL1、RL2交叉。 The reference pattern RMP is a substantially uniform oblique pattern (oblique lattice pattern) in order to avoid a change in the frictional force between the substrate P and the outer peripheral surface of the rotating cylinder DR or the tension of the substrate P. Moreover, the line patterns RL1, RL2 do not necessarily have to be inclined by 45 degrees, and may be The line pattern RL1 is formed in parallel with the Y-axis, and the line pattern RL2 is formed in a grid pattern of vertical and horizontal directions parallel to the X-axis. In addition, it is not necessary to make the line patterns RL1, RL2 intersect at 90 degrees, or the rectangular area surrounded by the adjacent two line patterns RL1 and the adjacent two line patterns RL2 may be square (or rectangular). The angle of the other diamonds intersects the line patterns RL1, RL2.

其次,參照圖3、圖4及圖9說明旋轉位置檢測機構14。如圖9所示,旋轉位置檢測機構14係以光學方式檢測旋轉圓筒DR之旋轉位置之物,可適用例如使用旋轉編碼器等之編碼器系統。旋轉位置檢測機構14係具有設在旋轉圓筒DR之兩端部之標尺部GPa、GPb、以及與標尺部GPa、GPb之各個對向之複數個編碼器讀頭EN1、EN2、EN3、EN4的移動測量裝置。圖4及圖9中,雖僅顯示與標尺部GPa對向之4個編碼器讀頭EN1、EN2、EN3、EN4,但在標尺部GPb亦同樣的有對向配置之編碼器讀頭EN1、EN2、EN3、EN4。旋轉位置檢測機構14,可檢測旋轉圓筒DR兩端部之偏移(於旋轉中心線AX2延伸之Y方向的微幅變位)的變位計YN1、YN2、YN3、YN4。 Next, the rotational position detecting mechanism 14 will be described with reference to Figs. 3, 4 and 9. As shown in FIG. 9, the rotational position detecting means 14 optically detects the rotational position of the rotating cylinder DR, and an encoder system using, for example, a rotary encoder can be applied. The rotational position detecting mechanism 14 has scale portions GPa and GPb provided at both end portions of the rotary cylinder DR, and a plurality of encoder read heads EN1, EN2, EN3, and EN4 opposed to each of the scale portions GPa and GPb. Mobile measuring device. In FIGS. 4 and 9, only the four encoder heads EN1, EN2, EN3, and EN4 that face the scale portion GPa are displayed. However, the encoder head EN1 having the opposite arrangement in the scale portion GPb is also provided. EN2, EN3, EN4. The rotational position detecting mechanism 14 can detect the displacement gauges YN1, YN2, YN3, and YN4 of the offset of the both ends of the rotating cylinder DR (the slight displacement in the Y direction in which the rotation center line AX2 extends).

標尺部GPa、GPb之刻度,於旋轉圓筒DR之外周面周方向全體分別形成為環狀。標尺部GPa、GPb係於旋轉圓筒DR之外周面周方向以一定間距(例如20μm)刻設凹狀或凸狀之格子線的繞射光柵,構成為遞增(incremental)型標尺。因此,標尺部GPa、GPb繞著旋轉中心線AX2與旋轉圓筒DR一體旋轉。 The scales of the scale portions GPa and GPb are formed in a ring shape in the entire circumferential direction of the rotating cylinder DR. The scale portions GPa and GPb are diffraction gratings in which concave or convex lattice lines are formed at a predetermined pitch (for example, 20 μm) in the circumferential direction of the outer circumference of the rotating cylinder DR, and are configured as an incremental type scale. Therefore, the scale portions GPa and GPb rotate integrally with the rotating cylinder DR around the rotation center line AX2.

基板P,係在避開旋轉圓筒DR兩端之標尺部GPa、GPb之內側、也就是說,捲繞在限制帶CLa、CLb之內側。若須有嚴格之配置關係時,係設定標尺部GPa、GPb之外周面、與捲繞在旋轉圓筒DR之基板P之 部分之外周面成同一面(距中心線AX2同一半徑)。為達成此,將標尺部GPa、GPb之外周面,相對旋轉圓筒DR之基板捲繞用外周面,作成於徑方向高基板P之厚度分即可。因此,可將形成於旋轉圓筒DR之標尺部GPa、GPb之外周面,設定為與基板P之外周面大致同一半徑。從而,編碼器讀頭EN1、EN2、EN3、EN4,可在與捲繞於旋轉圓筒DR之基板P上之描繪面相同徑方向位置檢測標尺部GPa、GPb,縮小測量位置與處理位置因旋轉系之徑方向相異而產生之阿貝誤差。 The substrate P is wound inside the restriction bands CLa and CLb while avoiding the inside of the scale portions GPa and GPb at both ends of the rotary cylinder DR. If a strict arrangement relationship is required, the outer peripheral surfaces of the scale portions GPa and GPb and the substrate P wound around the rotating cylinder DR are set. The outer peripheral surface is in the same plane (the same radius from the center line AX2). In order to achieve this, the outer circumferential surfaces of the substrate windings GPa and GPb may be formed so as to be thicker than the thickness of the substrate P in the radial direction. Therefore, the outer circumferential surfaces of the scale portions GPa and GPb formed on the rotary cylinder DR can be set to have substantially the same radius as the outer circumferential surface of the substrate P. Therefore, the encoder heads EN1, EN2, EN3, and EN4 can detect the scale portions GPa and GPb in the same radial direction position as the drawing surface wound on the substrate P of the rotating cylinder DR, and reduce the measurement position and the processing position due to the rotation. The Abbe error caused by the difference in the radial direction of the system.

編碼器讀頭EN1、EN2、EN3、EN4,從旋轉中心線AX2觀察係分別配置在標尺部GPa、GPb之周圍,於旋轉圓筒DR之周方向之不同位置。此編碼器讀頭EN1、EN2、EN3、EN4連接於控制部16。編碼器讀頭EN1、EN2、EN3、EN4朝標尺部GPa、GPb投射測量用光束,對其反射光束(繞射光)進行光電檢測,據以將對應標尺部GPa、GPb之周方向位置變化之檢測訊號(例如,具有90度相位差之2相訊號)輸出至控制部16。控制部16,藉由對該檢測訊號以未圖示之計數回路加以內挿進行數位處理,即能以次微米之分解能力測量旋轉圓筒DR之角度變化、亦即,測量其外周面之周方向位置變化。控制部16,亦可從旋轉圓筒DR之角度變化測量基板P之搬送速度。 The encoder heads EN1, EN2, EN3, and EN4 are disposed at different positions in the circumferential direction of the rotating cylinder DR from the rotation center line AX2, respectively, around the scale portions GPa and GPb. The encoder read heads EN1, EN2, EN3, and EN4 are connected to the control unit 16. The encoder read heads EN1, EN2, EN3, and EN4 project a measuring beam toward the scale portions GPa and GPb, and photoelectrically detect the reflected beam (diffracted light), thereby detecting the positional change of the corresponding scale portions GPa and GPb. The signal (for example, a 2-phase signal having a phase difference of 90 degrees) is output to the control unit 16. The control unit 16 performs digital processing by interpolating the detection signal by a counting circuit (not shown), that is, measuring the angular change of the rotating cylinder DR by the submicron resolution, that is, measuring the circumference of the outer peripheral surface thereof. The position of the direction changes. The control unit 16 can also change the transport speed of the substrate P from the angle of the rotating cylinder DR.

又,如圖4及圖9所示,編碼器讀頭EN1係配置在設置方位線Le1上。設置方位線Le1,係於XZ面內,連結編碼器讀頭EN1之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2的線。又,如上所述,設置方位線Le1,係於XZ面內,連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN1之 讀取位置與旋轉中心線AX2之線、與連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線係相同方位線。 Further, as shown in FIGS. 4 and 9, the encoder read head EN1 is disposed on the set azimuth line Le1. The azimuth line Le1 is set in the XZ plane, and the line connecting the measurement beam pair of the encoder head EN1 to the projection area (reading position) on the scale portion GPa (GPb) and the rotation center line AX2 is connected. Further, as described above, the azimuth line Le1 is provided in the XZ plane, and the lines connecting the drawing lines LL1, LL3, and LL5 and the rotation center line AX2 are connected. As can be seen from the above, the encoder read head EN1 is connected. The line of the reading position and the rotation center line AX2 and the line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2 are the same line of sight.

同樣的,如圖4及圖9所示,編碼器讀頭EN2係配置在設置方位線Le2上。設置方位線Le2,係於XZ面內,連結編碼器讀頭EN2之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le2,係於XZ面內,連結描繪線LL2、LL4與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN2之讀取位置與旋轉中心線AX2之線、與連結描繪線LL2、LL4與旋轉中心線AX2之線係相同方位線。 Similarly, as shown in FIGS. 4 and 9, the encoder read head EN2 is disposed on the set orientation line Le2. The azimuth line Le2 is set in the XZ plane, and the line connecting the measurement beam pair of the encoder head EN2 to the projection area (reading position) on the scale portion GPa (GPb) and the rotation center line AX2 is connected. Further, as described above, the azimuth line Le2 is provided in the XZ plane, and the lines connecting the drawing lines LL2, LL4 and the rotation center line AX2 are connected. As described above, the line connecting the reading position of the encoder head EN2 to the rotation center line AX2 and the line connecting the drawing lines LL2 and LL4 and the rotation center line AX2 are the same line of sight.

又,如圖4及圖9所示,編碼器讀頭EN3係配置在設置方位線Le3上。設置方位線Le3,係於XZ面內,連結編碼器讀頭EN3之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le3,係於XZ面內,連結對準顯微鏡AM1對基板P之觀察區域Vw1~Vw3與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN3之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線,在XZ面內觀察時係相同方位線。 Further, as shown in FIGS. 4 and 9, the encoder read head EN3 is disposed on the set azimuth line Le3. The azimuth line Le3 is set in the XZ plane, and the line connecting the measurement beam to the encoder portion GPa (GPb) on the scale portion (reading position) and the rotation center line AX2 is connected. Further, as described above, the azimuth line Le3 is provided in the XZ plane, and the line connecting the alignment microscopes AM1 to the observation areas Vw1 to Vw3 of the substrate P and the rotation center line AX2 is connected. As can be seen from the above, the line connecting the reading position of the encoder head EN3 to the rotation center line AX2 and the line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 are the same when viewed in the XZ plane. Direction line.

同樣的,如圖4及圖9所示,編碼器讀頭EN4係配置在設置方位線Le4上。設置方位線Le4,係於XZ面內,連結編碼器讀頭EN4之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le4,係於XZ面內,連結對準顯微鏡AM2對基板P之觀察區域Vw4~Vw6與旋轉中心線AX2之線。由以上 可知,連結編碼器讀頭EN4之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線,於XZ面內觀察時係相同方位線。 Similarly, as shown in FIGS. 4 and 9, the encoder read head EN4 is disposed on the set orientation line Le4. The azimuth line Le4 is set in the XZ plane, and is connected to the line between the measurement beam pair on the scale portion GPa (GPb) of the encoder read head EN4 and the rotation center line AX2. Further, as described above, the azimuth line Le4 is provided in the XZ plane, and the line connecting the observation microscopes V2 to Vw6 of the substrate P to the rotation center line AX2 is aligned with the alignment microscope AM2. From above It can be seen that the line connecting the reading position of the encoder read head EN4 and the rotation center line AX2 and the line connecting the observation areas Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2 are the same orientation lines when viewed in the XZ plane. .

將編碼器讀頭EN1、EN2、EN3、EN4之設置方位(以旋轉中心線AX2為之中心之在XZ面內的角度方向)以設置方位線Le1、Le2、Le3、Le4表示之情形時,如圖4所示,係將複數個描繪單元UW1~UW5及編碼器讀頭EN1、EN2配置成設置方位線Le1、Le2相對中心面p3成角度±θ°。設置方位線Le1與設置方位線Le2,係設置成編碼器讀頭EN1與編碼器讀頭EN2在標尺部GPa(GPb)之刻度周圍,空間上非干涉的狀態。 When the orientation of the encoder read heads EN1, EN2, EN3, and EN4 (the angular direction in the XZ plane centered on the rotation center line AX2) is expressed by the orientation lines Le1, Le2, Le3, and Le4, As shown in FIG. 4, a plurality of drawing units UW1 to UW5 and encoder heads EN1 and EN2 are arranged such that the orientation lines Le1 and Le2 are set at an angle of ±θ° with respect to the center plane p3. The orientation line Le1 and the set orientation line Le2 are set such that the encoder read head EN1 and the encoder read head EN2 are in a state of non-interference in space around the scale of the scale portion GPa (GPb).

變位計YN1、YN2、YN3、YN4,從旋轉中心線AX2觀察時分別配置在標尺部GPa或GPb之周圍,於旋轉圓筒DR周方向之不同位置。此變位計YN1、YN2、YN3、YN4連接於控制部16。 The displacement gauges YN1, YN2, YN3, and YN4 are disposed around the scale portion GPa or GPb at different positions in the circumferential direction of the rotating cylinder DR when viewed from the rotation center line AX2. The displacement meters YN1, YN2, YN3, and YN4 are connected to the control unit 16.

變位計YN1、YN2、YN3、YN4,可藉由在與捲繞在旋轉圓筒DR之基板P上之描繪面盡可能於徑方向接近之位置進行變位檢測,縮小阿貝誤差。變位計YN1、YN2、YN3、YN4,藉由朝旋轉圓筒DR兩端部之一方投射測量用光束,並對其反射光束(或繞射光)進行光電檢測,據以將對應旋轉圓筒DR兩端部之Y方向(基板P之寬度方向)之位置變化的檢測訊號輸出至控制部16。控制部16,藉由對該檢測訊號以未圖示之測量電路(計數電路或內挿電路等)進行數位處理,能以次微米之分解能力測量旋轉圓筒DR(及基板P)之Y方向之變位變化。控制部16,亦可從旋轉圓筒DR兩端部之一方之變化,測量旋轉圓筒DR之偏移旋轉。 The displacement gauges YN1, YN2, YN3, and YN4 can be subjected to displacement detection at a position close to the radial direction as much as possible on the drawing surface wound on the substrate P of the rotating cylinder DR, thereby reducing the Abbe error. The displacement gauges YN1, YN2, YN3, and YN4 project a measuring beam toward one of both ends of the rotating cylinder DR, and photoelectrically detect the reflected beam (or diffracted light), thereby correspondingly rotating the cylinder DR A detection signal for changing the position of the both ends in the Y direction (the width direction of the substrate P) is output to the control unit 16. The control unit 16 performs digital processing on a measurement signal (counter circuit or interpolation circuit, etc.) (not shown), and can measure the Y direction of the rotating cylinder DR (and the substrate P) with a submicron resolution. The displacement changes. The control unit 16 may measure the offset rotation of the rotating cylinder DR from one of the both ends of the rotating cylinder DR.

變位計YN1、YN2、YN3、YN4,雖然4個中只要有1個即 夠,但為了測量旋轉圓筒DR之偏移旋轉等,只要4個中有3個以上的話,即能掌握旋轉圓筒DR兩端部之一方之面移動(動態傾斜變化等)。又,若可由控制部16以對準顯微鏡AM1、AM2固定的測量基板P上之標記或圖案(或旋轉圓筒DR上之標記等)的話,亦可省略變位計YN1、YN2、YN3、YN4。 The displacement gauges YN1, YN2, YN3, YN4, although only one of the four In addition, in order to measure the offset rotation of the rotating cylinder DR, etc., if there are three or more of the four, it is possible to grasp the surface movement (dynamic tilt change, etc.) of one of the both ends of the rotating cylinder DR. Further, the indexing unit YN1, YN2, YN3, and YN4 may be omitted by the control unit 16 by marking or patterning on the measuring substrate P (or the marking on the rotating cylinder DR) fixed to the microscopes AM1 and AM2. .

此處,控制部16,係以編碼器讀頭EN1、EN2檢測標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,根據所檢測之旋轉角度位置,進行使用奇數號及偶數號描繪單元UW1~UW5之描繪。也就是說,控制部16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊進行光偏向器81之ON/OFF調變,但亦可將使用光偏向器81之ON/OFF調變之時序,根據所檢測之旋轉角度位置來進行,即能於基板P之光感應層上以良好精度描繪圖案。 Here, the control unit 16 detects the rotational angle positions of the scale portions (rotating cylinders DR) GPa and GPb by the encoder heads EN1 and EN2, and performs the odd-numbered and even-numbered drawing units based on the detected rotational angular position. The depiction of UW1~UW5. In other words, the control unit 16 performs ON/OFF modulation of the optical deflector 81 based on the CAD information of the pattern to be drawn on the substrate P during the scanning of the drawing light beam LB projected on the substrate P in the scanning direction. The timing of ON/OFF modulation using the optical deflector 81 can be performed based on the detected rotational angular position, that is, the pattern can be drawn with good precision on the photosensitive layer of the substrate P.

又,控制部16,可藉由儲存以對準顯微鏡AM1、AM2檢測基板P上之對準標記Ks1~Ks3時,以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉圓筒DR)之旋轉角度位置,能求出基板P上之對準標記Ks1~Ks3之位置與旋轉圓筒DR之旋轉角度位置的對應關係。同樣的,控制部16,藉由儲存以對準顯微鏡AM1、AM2檢測旋轉圓筒DR上之基準圖案RMP時,以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉圓筒DR)之旋轉角度位置,能求出旋轉圓筒DR上之基準圖案RMP之位置與旋轉圓筒DR之旋轉角度位置的對應關係。如以上所述,對準顯微鏡AM1、AM2,可精密的測量於觀察區域Vw1~Vw6內,對標記進行取樣(sampling)之瞬間之旋轉圓筒DR之旋轉角度位置(或周方向位置)。於曝光裝置EX, 即根據此測量結果,進行基板P與描繪於基板P上之既定圖案的對位(對準)、或旋轉圓筒DR與描繪裝置11之校準。 Further, the control unit 16 can detect the scale marks GPa1, GPb (rotating cylinder DR) detected by the encoder heads EN3 and EN4 when the alignment marks Ks1 to Ks3 on the substrate P are detected by the alignment microscopes AM1 and AM2. The position of the rotation angle can determine the correspondence relationship between the position of the alignment marks Ks1 to Ks3 on the substrate P and the rotational angle position of the rotating cylinder DR. Similarly, when the control unit 16 detects the reference pattern RMP on the rotating cylinder DR by the alignment microscopes AM1 and AM2, the scale portions GPa and GPb (rotating cylinder DR) detected by the encoder heads EN3 and EN4 are stored. The position of the rotation angle can determine the correspondence relationship between the position of the reference pattern RMP on the rotating cylinder DR and the rotational angle position of the rotating cylinder DR. As described above, the alignment microscopes AM1 and AM2 can accurately measure the rotation angle position (or the circumferential direction position) of the rotating cylinder DR at the moment of sampling (Sampling) in the observation areas Vw1 to Vw6. In the exposure device EX, That is, based on the measurement result, alignment (alignment) of the substrate P with a predetermined pattern drawn on the substrate P, or calibration of the rotating cylinder DR and the drawing device 11 is performed.

又,實際之取樣,係在以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置,成為與預先大略獲知之基板P上之標記或旋轉圓筒DR上之基準圖案RMP之位置對應的角度位置時,即將從對準顯微鏡AM1、AM2之各攝影系GD輸出之影像資訊高速的寫入影像記憶體等據以進行。亦即,係以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置為觸發(trigger),對從各攝影系GD輸出之影像資訊進行取樣。又,與此不同的,亦有回應一定頻率之時脈訊號之各脈衝,對以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置(計數測量值)與從各攝影系GD輸出之影像資訊同時進行取樣的方法。 Further, the actual sampling is at the position of the rotation angle of the rotating cylinder DR measured by the encoder heads EN3 and EN4, and becomes the position on the substrate P which is roughly known in advance or the position of the reference pattern RMP on the rotating cylinder DR. In the case of the corresponding angular position, the image information output from the respective imaging systems GD of the alignment microscopes AM1 and AM2 is recorded at a high speed in the image memory. That is, the image information output from each of the photographic systems GD is sampled by using the rotation angle position of the rotating cylinder DR measured by the encoder heads EN3 and EN4 as a trigger. In addition, unlike the pulse of the clock signal of a certain frequency, the rotation angle position (counting measurement value) of the rotating cylinder DR measured by the encoder heads EN3 and EN4 and the GD from each photography system are also used. The method of sampling the output image information at the same time.

又,基板P上之標記及旋轉圓筒DR上之基準圖案RMP,由於係相對觀察區域Vw1~Vw6移動於一方向,於從各攝影系GD輸出之影像資訊之取樣時,作為CCD或CMOS之攝影元件以使用快門速度快者較佳。隨此,亦須提升照明觀察區域Vw1~Vw6之照明光之輝度,作為對準顯微鏡AM1、AM2之照明光源,亦可考慮使用閃光燈或高輝度LED等。 Further, the mark on the substrate P and the reference pattern RMP on the rotating cylinder DR are moved in one direction with respect to the observation areas Vw1 to Vw6, and are taken as CCD or CMOS when sampling image information output from each photography system GD. It is preferable that the photographing element is fast in use of the shutter speed. Accordingly, the luminance of the illumination light in the illumination observation areas Vw1 to Vw6 must be increased. As the illumination source of the alignment microscopes AM1 and AM2, it is also possible to use a flash lamp or a high-luminance LED.

圖11係顯示在基板上之描繪線與描繪圖案之位置關係的說明圖。描繪單元UW1~UW5,藉由沿著描繪線LL1~LL5掃描描繪光束LB之點光,據以描繪圖案PT1~PT5。描繪線LL1~LL5之描繪開始位置OC1~OC5為圖案PT1~PT5之描繪始端PTa。描繪線LL1~LL5之描繪結束位置EC1~EC5為圖案PT1~PT5之描繪終端PTb。 Fig. 11 is an explanatory view showing a positional relationship between a drawing line and a drawing pattern on a substrate. The drawing units UW1 to UW5 scan the spot light of the drawing light beam LB along the drawing lines LL1 to LL5 to draw the patterns PT1 to PT5. The drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 are the drawing start ends PTa of the patterns PT1 to PT5. The drawing end positions EC1 to EC5 of the drawing lines LL1 to LL5 are drawing terminals PTb of the patterns PT1 to PT5.

圖案PT1之描繪始端PTa、描繪終端PTb中之描繪終端PTb 與圖案PT2之描繪終端PTb接合。同樣的,圖案PT2之描繪始端PTa與圖案PT3之描繪始端PTa接合、圖案PT3之描繪終端PTb與圖案PT4之描繪終端PTb接合、圖案PT4之描繪始端PTa與圖案PT5之描繪始端PTa接合。如此,描繪於基板P上之圖案PT1~PT5彼此即隨著基板P往長條方向之移動而於基板P之寬度方向接合,於大的曝光區域A7全體描繪出元件圖案。 The drawing start terminal PTa of the pattern PT1 and the drawing terminal PTb in the drawing terminal PTb Engaged with the drawing terminal PTb of the pattern PT2. Similarly, the drawing start end PTa of the pattern PT2 is joined to the drawing start end PTa of the pattern PT3, the drawing terminal PTb of the pattern PT3 is joined to the drawing terminal PTb of the pattern PT4, and the drawing start end PTa of the pattern PT4 is joined to the drawing start end PTa of the pattern PT5. In this manner, the patterns PT1 to PT5 drawn on the substrate P are bonded to each other in the width direction of the substrate P as the substrate P moves in the strip direction, and the element pattern is drawn in the entire large exposure region A7.

圖12係顯示描繪光束之點光與描繪線之關係的說明圖。描繪單元UW1~UW5中,代表性的說明描繪單元UW1及UW2之描繪線LL1及LL2。由於描繪單元UW3~UW5之描繪線LL3~LL5亦相同,因此省略其說明。旋藉由轉多面鏡97之等速旋轉,描繪光束LB之光束點光SP即沿著基板P上之描繪線LL1及LL2,掃描從描繪開始位置OC1、OC2至描繪結束位置EC1、EC2之描繪線之長度LBL。 Fig. 12 is an explanatory view showing the relationship between the spot light of the light beam and the drawing line. In the drawing units UW1 to UW5, the drawing lines LL1 and LL2 of the drawing units UW1 and UW2 are typically described. Since the drawing lines LL3 to LL5 of the drawing units UW3 to UW5 are also the same, the description thereof will be omitted. By the constant-speed rotation of the polygon mirror 97, the beam spot light SP of the light beam LB is drawn along the drawing lines LL1 and LL2 on the substrate P, and the scanning is drawn from the drawing start positions OC1 and OC2 to the drawing end positions EC1 and EC2. The length of the line is LBL.

一般來說,於直接描曝光方式,即使是裝置在描繪可曝光之最小尺寸之圖案時,亦係以複數個點光SP之多重曝光(多重寫入)來實現高精度且安定之圖案描繪。如圖12所示,設於描繪線LL1及LL2上,點光SP之實效直徑為Xs時,由於描繪光束LB為脈衝光,因此以1個脈衝光(微微秒級之發光時間)生成之點光SP與下1個脈衝光生成之點光SP,係以直徑Xs之約1/2距離CXs於Y方向(主掃描方向)重疊之方式進行掃描。 In general, in the direct exposure mode, even when the device draws a pattern of the smallest size that can be exposed, multiple exposures (multiple writing) of a plurality of spot lights SP are used to achieve high-precision and stable pattern drawing. As shown in FIG. 12, when the effective diameter of the spot light SP is Xs, it is provided on the drawing lines LL1 and LL2, and since the drawing light beam LB is pulsed light, it is generated by one pulse light (lighting time in picosecond order). The spot SP generated by the light SP and the next pulse light is scanned so as to overlap the CXs in the Y direction (main scanning direction) by about 1/2 of the diameter Xs.

又,與沿各描繪線LL1、LL2之點光SP之主掃描同時,基板P以一定速度被搬送向+X方向,因此各描繪線LL1、LL2於基板P上往X方向以一定間距移動(副掃描)。該間距,此處亦係設定為點光SP之直徑Xs之約1/2距離CXs,但不限於此。據此,於副掃描方向(X方向)亦係以直徑Xs之1/2(或除此以外之重疊距離亦可)距離CXs於X方向相 鄰之點光SP彼此重疊曝光。進一步的,以在描繪線LL1之描繪結束位置EC1撃發之光束點光SP與在描繪線LL2之描繪結束位置EC2撃發之光束點光SP,隨著基板P往長條方向之移動(即副掃描)於基板P之寬度方向(Y方向)以重疊距離CXs接合之方式,設定描繪線LL1之描繪開始位置OC1與描繪結束位置EC1、及描繪線LL2之描繪開始位置OC2與描繪結束位置EC2。 Further, since the substrate P is transported to the +X direction at a constant speed at the same time as the main scanning of the spot light SP along the drawing lines LL1 and LL2, the drawing lines LL1 and LL2 are moved at a constant pitch in the X direction on the substrate P ( Sub-scan). The pitch is also set to about 1/2 of the distance CXs of the diameter Xs of the spot light SP, but is not limited thereto. Accordingly, in the sub-scanning direction (X direction), the diameter Xs is also 1/2 (or the overlapping distance may be), and the distance CXs is in the X direction. The adjacent spot lights SP are overlapped and exposed to each other. Further, the beam spot light SP emitted at the drawing end position EC1 of the drawing line LL1 and the beam spot light SP emitted at the drawing end position EC2 of the drawing line LL2 move in the strip direction with the substrate P (ie, The sub-scanning is performed such that the drawing start position OC1 and the drawing end position EC1 of the drawing line LL1 and the drawing start position OC2 and the drawing end position EC2 of the drawing line LL2 are set so as to be joined by the overlapping distance CXs in the width direction (Y direction) of the substrate P. .

例如,當設光束點光SP之實效直徑Xs為4μm時,能良好的曝光出以點光SP之2列×2行(於主掃描與副掃描之兩方向重疊排排列之合計4個點光)占有之面積、或以3列×3行(於主掃描與副掃描之兩方向重疊排列之合計9個點光)占有之面積為最小尺寸的圖案,亦即最小尺寸為6μm~8μm程度之線寬度的圖案。又,當使旋轉多面鏡97之反射面97b為10面、繞旋轉軸97a之旋轉多面鏡97之旋轉速度為1萬rpm以上時,可使藉由旋轉多面鏡97在描繪線(LL1~LL5)上之點光SP(描繪光束LB)之掃描次數(設係掃描頻率Fms)為1666.66…Hz以上。此係代表可在基板P上於每1秒之搬送方向(X方向)描繪1666條以上之描繪線分之圖案。 For example, when the effective diameter Xs of the beam spot light SP is 4 μm, two rows of the spot light SP can be favorably exposed, and two rows of light are arranged in the two rows of the main scanning and the sub-scanning. The area occupied, or the pattern of the smallest size occupied by 3 columns × 3 rows (the total of 9 spot lights arranged in the two directions of the main scanning and the sub-scanning), that is, the minimum size is 6 μm to 8 μm. Line width pattern. Further, when the rotating surface of the rotating polygon mirror 97 is 10 faces and the rotational speed of the rotating polygon mirror 97 around the rotating shaft 97a is 10,000 rpm or more, the rotating polygon mirror 97 can be drawn on the drawing line (LL1 to LL5). The number of scans (the scanning frequency Fms) of the spot light SP (drawing light beam LB) is 1166.66...Hz or more. This represents a pattern in which 1,666 lines of drawing lines can be drawn on the substrate P in the transport direction (X direction) every one second.

又,藉由旋轉圓筒DR之旋轉驅動之基板P之搬送速度為5mm/s程度時,可將圖12所示之描繪線LL1(LL2~LL5亦相同)之X方向(基板P之搬送方向)之間距(距離CXs)作成約3μm程度。 When the transport speed of the substrate P driven by the rotation of the rotating cylinder DR is about 5 mm/s, the X direction of the drawing line LL1 (the same applies to LL2 to LL5) shown in FIG. 12 (the transport direction of the substrate P) can be used. The distance (distance CXs) is about 3 μm.

本實施形態之場合,於主掃描方向(Y方向)之圖案描繪之分解能力R,係由點光SP之實效直徑Xs與掃描頻率Fms,與構成光偏向器81之聲光元件(AOM)之ON/OFF最小切換時間來決定。作為聲光元件(AOM),使用最高回應頻率Fss=50MHz者時,可使ON狀態與OFF狀態 之各時間為20nS程度。再者,由於藉由旋轉多面鏡97之1個反射面97b之描繪光束LB之實效掃描期間(描繪線之長度LBL分之點光掃描),係1個反射面97b之旋轉角度分之1/3程度,因此當將描繪線之長度LBL設為30mm時,依存於光偏向器81之切換時間之決定之分解能力R,即為R=LBL/(1/3)/(1/Fms)×(1/Fss)≒3μm。 In the case of the present embodiment, the resolution R of the pattern drawing in the main scanning direction (Y direction) is the effective diameter Xs of the spot light SP and the scanning frequency Fms, and the acousto-optic element (AOM) constituting the optical deflector 81. ON/OFF minimum switching time is determined. As the acousto-optic element (AOM), when the highest response frequency Fss=50MHz is used, the ON state and the OFF state can be made. Each time is 20nS. Furthermore, since the effective scanning period of the drawing light beam LB of one of the reflecting surfaces 97b of the polygon mirror 97 is rotated (the length of the drawing line is LBL), the rotation angle of the one reflecting surface 97b is 1/1 3 degrees, so when the length LBL of the drawing line is set to 30 mm, the decomposition ability R depending on the switching time of the optical deflector 81 is R = LBL / (1/3) / (1/Fms) × (1/Fss) ≒ 3 μm.

從此關係式,為提升圖案描繪之分解能力R,例如作為光偏向器81之聲光元件(AOM)使用最高回應頻率Fss為100MHz者,並將ON/OFF之切換時間設定為10nsec。據此,分解能力R即成為一半之1.5μm。此場合,係使基板P藉由旋轉圓筒DR之旋轉之搬送速度為一半。作為提升分解能力R之其他方法,例如亦可提高旋轉多面鏡97之旋轉速度。 From this relationship, in order to enhance the resolution R of the pattern drawing, for example, the acousto-optic element (AOM) of the optical deflector 81 uses the highest response frequency Fss of 100 MHz, and sets the ON/OFF switching time to 10 nsec. According to this, the decomposition ability R becomes 1.5 μm which is half. In this case, the transport speed of the substrate P by the rotation of the rotating cylinder DR is half. As another method of increasing the decomposition ability R, for example, the rotation speed of the rotating polygon mirror 97 can also be increased.

一般來說,於微影製程中使用之光阻劑,係使用光阻感度Sr約為30mj/cm2程度之物。設光學系之穿透率△Ts為0.5(50%)、在旋轉多面鏡97之1個反射面97b中之實效掃描期間為1/3程度、描繪線之長度LBL為30mm、描繪單元UW1~UW5之數Nuw為5、旋轉圓筒DR之基板P之搬送速度Vp為5mm/s(300mm/min)的話,光源裝置CNT所需之雷射功率Pw,可由次式加以預估。 Generally, the photoresist used in the lithography process is a material having a photoresist sensitivity Sr of about 30 mj/cm 2 . The transmittance ΔTs of the optical system is 0.5 (50%), the effective scanning period in one of the reflection surfaces 97b of the rotating polygon mirror 97 is 1/3, the length LBL of the drawing line is 30 mm, and the drawing unit UW1 is used. When the Nuw of the UW5 is 5 and the transport speed Vp of the substrate P of the rotating cylinder DR is 5 mm/s (300 mm/min), the laser power Pw required for the light source device CNT can be estimated by the following equation.

Pw=30/60×3×30×5/0.5/(1/3)=1350mW Pw=30/60×3×30×5/0.5/(1/3)=1350mW

假設,描繪單元為7個時,光源裝置CNT所需之雷射功率Pw,如次式。 It is assumed that when the drawing unit is seven, the laser power Pw required by the light source device CNT is as follows.

Pw=30/60×3×30×7/0.5/(1/3)=1890mW Pw=30/60×3×30×7/0.5/(1/3)=1890mW

例如,若光阻感度為80mj/cm2程度的話,為以相同速度進行曝光,作為光束輸出需有3~5W程度之光源裝置CNT。取代此種高功率 光源之使用,若使基板P藉由旋轉圓筒DR之旋轉之搬送速度Vp相對初期值之5mm/s降低至30/80的話,作為光束輸出亦可使用1.4~1.9W程度之光源裝置進行曝光。 For example, when the photoresist sensitivity is about 80 mj/cm 2 , exposure is performed at the same speed, and a light source device CNT having a wavelength of about 3 to 5 W is required as a beam output. In place of the use of such a high-power light source, if the transport speed Vp of the substrate P by the rotation of the rotating cylinder DR is lowered to 30/80 from the initial value of 5 mm/s, the beam output can also be used in the range of 1.4 to 1.9 W. The light source device performs exposure.

又,若設描繪線之長度LBL為30mm,並假設光束點光SP之點直徑Xs、與光偏向器81之聲光元件(AOM)之光切換所決定之分解能力(指定光束位置之最小格(grid),相當於1像素)Xg相等,皆為3μm時,設10面旋轉多面鏡97之旋轉速度為1萬rpm時之旋轉多面鏡97之1旋轉之時間為3/500秒、旋轉多面鏡97之1個反射面97b之實效掃描期間為1個反射面97b之旋轉角度分之1/3時,1個反射面97b之實效掃描時間Ts(秒)即可以(3/500)×(1/10)×(1/3)求出,約為Ts=1/5000(秒)。據此,光源裝置CNT為脈衝雷射時之脈衝發光頻率Fz,即可以Fz=LBL/(Ts‧Xs)求出,Fz=50MHz為最低頻率。從而,於實施形態,即需要輸出頻率50MHz以上之脈衝雷射的光源裝置CNT。有鑑於此,光源裝置CNT之衝發光頻率Fz,最好是光偏向器81之聲光元件(AOM)之最高回應頻率Fss(例如50MHz)的2倍以上(例如100MHz)。 Further, if the length LBL of the drawing line is 30 mm, the decomposition power determined by the point diameter Xs of the beam spot light SP and the light of the acousto-optic element (AOM) of the optical deflector 81 (the minimum lattice of the specified beam position) is assumed. (grid), equivalent to 1 pixel) Xg is equal, when both are 3 μm, when the rotation speed of the 10-sided rotating polygon mirror 97 is 10,000 rpm, the rotation time of the rotating polygon mirror 97 is 3/500 second, and the rotation is multi-faceted. When the effective scanning period of one reflecting surface 97b of the mirror 97 is one-third of the rotation angle of one reflecting surface 97b, the effective scanning time Ts (seconds) of one reflecting surface 97b can be (3/500)×( 1/10) × (1/3) is found to be approximately Ts = 1/5000 (seconds). Accordingly, the light source device CNT is a pulse light emission frequency Fz at the time of pulse laser, that is, Fz=LBL/(Ts‧Xs), and Fz=50 MHz is the lowest frequency. Therefore, in the embodiment, it is necessary to output a light source device CNT of a pulse laser having a frequency of 50 MHz or more. In view of this, the light-emitting frequency Fz of the light source device CNT is preferably twice or more (for example, 100 MHz) of the highest response frequency Fss (for example, 50 MHz) of the acousto-optic element (AOM) of the optical deflector 81.

進一步的,將光偏向器81之聲光元件(AOM)切換為ON狀態/OFF狀態之驅動訊號,為避免聲光元件(AOM)從ON狀態遷移至OFF狀態之期間、或從OFF狀態遷移至ON狀態之期間產生脈衝發光,最好是進行使光源裝置CNT與以脈衝發光頻率Fz振盪之時脈訊號同步的控制。 Further, the driving signal for switching the acousto-optic element (AOM) of the optical deflector 81 to the ON state/OFF state is to prevent the acousto-optic element (AOM) from transitioning from the ON state to the OFF state or from the OFF state to the OFF state. The pulse light is generated during the ON state, and it is preferable to perform control for synchronizing the light source device CNT with the clock signal oscillating at the pulse light-emitting frequency Fz.

其次,將光束點光SP之點直徑Xs與光源裝置CNT之脈衝發光頻率Fz之關係,從光束形狀(重疊的2個點光SP之強度分布)之觀 點,使用圖13之圖表加以說明。圖13之橫軸係代表點光SP在沿描繪線之Y方向、或沿基板P之搬送方向之X方向的描繪位置、或點光SP之尺寸,縱軸係代表將單獨點光SP之峰值強度規格化為1.0之相對強度值。又,此處,係設單獨點光SP之強度分布為J1,假定為高斯分布來加以說明。 Next, the relationship between the spot diameter Xs of the beam spot light SP and the pulse light-emitting frequency Fz of the light source device CNT is obtained from the beam shape (the intensity distribution of the overlapping two spot lights SP) Point, use the chart of Figure 13 to illustrate. The horizontal axis of Fig. 13 represents the drawing position of the spot light SP in the Y direction along the drawing line or the X direction along the transport direction of the substrate P, or the size of the spot light SP, and the vertical axis represents the peak of the individual spot light SP. The strength is normalized to a relative intensity value of 1.0. Here, the intensity distribution of the individual spot light SP is J1, which is assumed to be a Gaussian distribution.

圖13中,單獨點光SP之強度分布J1,係設相對峰值強度以1/e2之強度具有3μm之直徑。強度分布J2~J6,係顯示將此種點光SP之2脈衝分,於主掃描方向或副掃描方向錯開位置照射時於基板P上所得之積算的強度分布(輪廓)之模擬結果,分別係使位置之錯開量(間隔距離)不同者。 In Fig. 13, the intensity distribution J1 of the spot light SP alone is set to have a diameter of 3 μm with respect to the intensity of 1/e 2 relative to the peak intensity. The intensity distributions J2 to J6 are the simulation results of the integrated intensity distribution (contour) obtained on the substrate P when the two pulses of the spot light SP are divided into the main scanning direction or the sub-scanning direction. Make the position offset (distance distance) different.

圖13之圖表中,強度分布J5係顯示2脈衝分之點光SP錯開與直徑3μm相同之間隔距離之情形,強度分布J4為2脈衝分之點光SP之間隔距離為2.25μm之情形、強度分布J3為2脈衝分之點光SP之間隔距離為1.5μm之情形。由此強度分布J3~J5之變化明顯可知,於強度分布J5,直徑3μm之點光SP以3μm間隔照射之條件之情形時,積算之輪廓,為2個點光各個之中心位置最高的瘤狀,於2個點光之中點位置,規格化強度僅能獲得0.3程度。相對於此,直徑3μm之點光SP以1.5μm間隔照射之條件時積算之輪廓,於輪廓中明顯之瘤狀分布,夾著2個點光之中點位置大致平坦。 In the graph of Fig. 13, the intensity distribution J5 shows the case where the spot light SP of the two-pulse point is shifted by the same distance as the diameter of 3 μm, and the intensity distribution J4 is the case where the distance of the spot light SP of the two pulse points is 2.25 μm, and the intensity The distribution J3 is a case where the distance between the spot lights SP of 2 pulses is 1.5 μm. As a result of the change in the intensity distribution J3 to J5, it is apparent that in the case where the intensity distribution J5 and the spot light SP having a diameter of 3 μm are irradiated at intervals of 3 μm, the contour of the integrated projection is the highest in the center position of each of the two spot lights. At the midpoint of the two spotlights, the normalized intensity can only be obtained to a degree of 0.3. On the other hand, the outline of the spot light SP having a diameter of 3 μm at a time of irradiation at intervals of 1.5 μm is substantially in a knob-like distribution in the outline, and the position of the point between the two spot lights is substantially flat.

又,圖13中,強度分布J2係顯示將2脈衝分之點光SP之間隔距離設為0.75μm時之積算輪廓,強度分布J6係將間隔距離設定為單獨點光SP之強度分布J1之半值全寬度(FWHM)1.78μm時之積算輪廓。 Further, in Fig. 13, the intensity distribution J2 shows the integrated contour when the distance between the two pulse points SP is set to 0.75 μm, and the intensity distribution J6 sets the separation distance to the half of the intensity distribution J1 of the individual spot light SP. The integrated contour at full width (FWHM) of 1.78 μm.

如以上所述,在以較點光SP之直徑Xs相同間隔短之間隔 距離CXs照射2個點光之脈衝振盪之條件時,由於易顯著出現2個瘤狀分布,因此,最好是設定為曝光時不會產生強度不均(描繪精度之劣化)的最佳間隔距離。如圖13之強度分布J3或J6般,以單一點光SP之直徑Xs之一半程度(例如40~60%)之間隔距離CXs重疊較佳。此種最佳間隔距離CXs,於主掃描方向,可藉由調整光源裝置CNT之脈衝發光頻率Fz、與沿描繪線之點光SP之掃描速度或掃描時間Ts(旋轉多面鏡97之旋轉速度)至少一方來加以設定,於副掃描方向,可藉由調整描繪線之掃描頻率Fms(旋轉多面鏡97之旋轉速度)與基板P之X方向移動速度中之至少一方來加以設定。 As described above, at intervals of the same interval of the diameter Xs of the spot light SP When the CXs are irradiated with the pulse oscillation of two spotlights, it is easy to cause two knob-like distributions. Therefore, it is preferable to set the optimum separation distance without unevenness in intensity (deterioration of drawing accuracy) during exposure. . As in the intensity distribution J3 or J6 of Fig. 13, it is preferable to overlap the distance CXs by a half (for example, 40 to 60%) of the diameter Xs of the single spot light SP. The optimum separation distance CXs is in the main scanning direction by adjusting the pulse illumination frequency Fz of the light source device CNT, the scanning speed of the spot light SP along the drawing line, or the scanning time Ts (rotation speed of the rotating polygon mirror 97). At least one of them is set in the sub-scanning direction by setting at least one of the scanning frequency Fms (rotation speed of the rotating polygon mirror 97) of the drawing line and the X-direction moving speed of the substrate P.

例如,在無法高精度調整旋轉多面鏡97之旋轉速度絶對值(點光之掃描時間Ts)之情形時,藉由微調整光源裝置CNT之脈衝發光頻率Fz,可將於主掃描方向之點光SP之間隔距離CXs與點光之直徑Xs(尺寸)之比率,調整至最佳範圍。 For example, when the absolute value of the rotational speed of the rotating polygon mirror 97 (the scanning time Ts of the spot light) cannot be adjusted with high precision, the spot light of the main scanning direction can be adjusted by finely adjusting the pulse light-emitting frequency Fz of the light source device CNT. The ratio of the distance G between the SP and the diameter Xs (size) of the spot light is adjusted to the optimum range.

如以上所述,在使2個點光SP於掃描方向重疊時,亦即,Xs>CXs時,光源裝置CNT係將脈衝發光頻率Fz設定為Fz>LBL/(Ts‧Xs)之關係,滿足Fz=LBL/(Ts‧CXs)之關係。例如,光源裝置CNT之脈衝發光頻率Fz為100MHz時,設旋轉多面鏡97為10面而以1萬rpm旋轉時,以1/e2、或半值全寬度(FWHM)規定之點光之實效直徑Xs為3μm,可將來自各描繪單元UW1~UW5之脈衝雷射光束(點光),於各描繪線LL1~LL5上以直徑Xs之約一半之1.5μm間隔(CXs)照射。據此,圖案描繪時之曝光量均勻性獲得提升,即便是微細圖案亦能獲得基於描繪資料之忠實的曝光像(光阻像),達成高精度的描繪。 As described above, when the two spot lights SP are superimposed in the scanning direction, that is, when Xs>CXs, the light source device CNT sets the pulse light-emitting frequency Fz to the relationship of Fz>LBL/(Ts‧Xs), and satisfies The relationship between Fz=LBL/(Ts‧CXs). For example, when the pulse light-emitting frequency Fz of the light source device CNT is 100 MHz, when the rotating polygon mirror 97 is 10 faces and rotated at 10,000 rpm, the effect of the spot light specified by 1/e 2 or half-value full width (FWHM) is set. The diameter Xs is 3 μm, and the pulsed laser beam (dot light) from each of the drawing units UW1 to UW5 can be irradiated on the respective drawing lines LL1 to LL5 at intervals of 1.5 μm (CXs) of about half of the diameter Xs. According to this, the uniformity of the exposure amount at the time of pattern drawing is improved, and even a fine pattern can obtain a faithful exposure image (photoresist image) based on the drawing data, and high-precision drawing can be achieved.

進一步的,以聲光元件(AOM)之光切換速度決定之分解能力(最高回應頻率Fss)與光源裝置CNT之脈衝振盪頻率Fz,若設h為任意整數時,必須是換算為位置或時間後整數倍之關係,亦即必須是Fz=h‧Fss之關係。此係由於為避免聲光元件(AOM)之光切換時序,在從光源裝置CNT發出脈衝光束之中進行ON/OFF。 Further, the decomposition ability (the highest response frequency Fss) determined by the optical switching speed of the acousto-optic element (AOM) and the pulse oscillation frequency Fz of the light source device CNT, if h is an arbitrary integer, must be converted to position or time. The relationship of integer multiples, that is, the relationship of Fz=h‧Fss. This is because ON/OFF is performed among the pulse beams emitted from the light source device CNT in order to avoid the light switching timing of the acousto-optic element (AOM).

第1實施形態之曝光裝置EX,由於係使用將光纖增幅器EB1、FB2與波長轉換部CU2之波長轉換元件加以組合之脈衝雷射光源之光源裝置CNT,因此於紫外波長帶(400~300nm),容易地得到此種具有高振盪頻率之脈衝光。 In the exposure apparatus EX of the first embodiment, since the light source device CNT of the pulsed laser light source combining the optical fiber amplifiers EB1 and FB2 and the wavelength conversion element of the wavelength conversion unit CU2 is used, the ultraviolet wavelength band (400 to 300 nm) is used. Such pulsed light having a high oscillation frequency is easily obtained.

其次,說明曝光裝置EX之描繪裝置11之調整方法。圖14係關於第1實施形態之曝光裝置之調整方法的流程圖。圖15係以示意方式顯示旋轉圓筒之基準圖案與描繪線之關係的說明圖。圖16係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於亮視野受光之光電感測器輸出之訊號的說明圖。控制部16,為進行掌握複數個描繪單元UW1~UW5之位置關係的校準,如圖15所示,使旋轉圓筒DR旋轉。旋轉圓筒DR,可搬送描繪光束LB可穿透程度之具透光性的基板P。 Next, a method of adjusting the drawing device 11 of the exposure device EX will be described. Fig. 14 is a flow chart showing a method of adjusting the exposure apparatus of the first embodiment. Fig. 15 is an explanatory view showing the relationship between the reference pattern of the rotating cylinder and the drawing line in a schematic manner. Fig. 16 is an explanatory view showing, in a schematic manner, a signal output from a photodetector that receives reflected light from a reference pattern of a rotating cylinder in a bright field. The control unit 16 performs calibration for grasping the positional relationship of the plurality of drawing units UW1 to UW5, and rotates the rotating cylinder DR as shown in Fig. 15 . The rotating cylinder DR can transport the substrate P having a light transmissive degree to which the light beam LB can penetrate.

如上所述,基準圖案RMP與旋轉圓筒DR之外周面成一體。如圖15所示,基準圖案RMP中、任意之基準圖案RMP1隨著旋轉圓筒DR外周面之移動而移動。因此,基準圖案RMP1在通過描繪線LL1、LL3、LL5後,通過描繪線LL2、LL4。例如,控制部16在相同基準圖案RMP1通過描繪線LL1、LL3、LL5後時,使描繪單元UW1、UW3、UW5之描繪光束LB掃描。控制部16,在相同基準圖案RMP1通過描繪線LL2、LL4後時,使描 繪單元UW2、UW4之描繪光束LB掃描(步驟S1)。因此、基準圖案RMP1即成為用以掌握描繪單元UW1~UW5之位置關係的基準。 As described above, the reference pattern RMP is integrated with the outer peripheral surface of the rotating cylinder DR. As shown in FIG. 15, among the reference patterns RMP, any of the reference patterns RMP1 moves in accordance with the movement of the outer peripheral surface of the rotating cylinder DR. Therefore, the reference pattern RMP1 passes through the drawing lines LL1, LL3, and LL5, and then passes through the lines LL2 and LL4. For example, when the same reference pattern RMP1 passes through the drawing lines LL1, LL3, and LL5, the control unit 16 scans the drawing light beams LB of the drawing units UW1, UW3, and UW5. The control unit 16 causes the drawing after the same reference pattern RMP1 passes through the drawing lines LL2 and LL4. The drawing beam LB of the drawing units UW2, UW4 is scanned (step S1). Therefore, the reference pattern RMP1 serves as a reference for grasping the positional relationship between the drawing units UW1 to UW5.

上述校準檢測系31之光電感測器31Cs(圖4),透過包含f-θ透鏡系85與掃描器83之掃描光學系,檢測來自基準圖案RMP1之反射光。光電感測器31Cs連接於控制部16,控制部16檢測光電感測器31Cs之檢測訊號(步驟S2)。例如,描繪單元UW1~UW5就描繪線LL1~LL5毎一個,將複數個描繪光束LB之各個於既定掃描方向掃描複數行。 The photodetector 31Cs (Fig. 4) of the calibration detecting system 31 transmits the reflected light from the reference pattern RMP1 through the scanning optical system including the f-θ lens system 85 and the scanner 83. The photodetector 31Cs is connected to the control unit 16, and the control unit 16 detects the detection signal of the photodetector 31Cs (step S2). For example, the drawing units UW1 to UW5 draw one line LL1 to LL5, and scan each of the plurality of drawing light beams LB in a predetermined scanning direction.

例如,如圖16所示,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第1行掃描SC1。其次,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第2行掃描SC2。其次,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第3行掃描SC3。 For example, as shown in FIG. 16 , the drawing units UW1 to UW5 draw the length LBL of the drawing line from the drawing start position OC1 in the direction (Y direction) of the rotation center line AX2 of the rotation cylinder DR (see The first line of Fig. 12) scans SC1. Next, the drawing units UW1 to UW5 perform the second length LBL (see FIG. 12) of the drawing line in the direction (Y direction) along the rotation center line AX2 of the rotation cylinder DR from the drawing start position OC1 from the drawing start position OC1. Line scan SC2. Next, the drawing units UW1 to UW5 draw the drawing light beam LB from the drawing start position OC1 in the direction (Y direction) of the rotation center line AX2 of the rotation cylinder DR to the third line length LBL (see FIG. 12). Line scan SC3.

旋轉圓筒DR,由於係繞旋轉中心線AX2旋轉,因此第1行掃描SC1,第2行掃描SC2及第3行掃描SC3在基準圖案RMP1上之X方向位置,有△P1、△P2之差異。又,控制部16,亦可以是進行在使旋轉圓筒DR靜止之狀態下進行沿第1行掃描SC1之描繪光束LB之掃描,之後,在使旋轉圓筒DR旋轉△P1分後靜止,進行沿第2行掃描SC2之描繪光束LB之掃描,後再次使旋轉圓筒DR旋轉△P2後靜止,進行沿第3行掃描SC3之描繪光束LB之掃描、以此順序使各部動作的程序。 Since the rotating cylinder DR is rotated about the rotation center line AX2, the first row scanning SC1, the second row scanning SC2, and the third row scanning SC3 are in the X direction position on the reference pattern RMP1, and there is a difference between ΔP1 and ΔP2. . Further, the control unit 16 may perform scanning of the drawing light beam LB along the first line scanning SC1 while the rotating cylinder DR is stationary, and then may perform stationary after the rotating cylinder DR is rotated by ΔP1. The scanning of the drawing light beam LB of the SC2 is scanned along the second line, and then the rotating cylinder DR is rotated by ΔP2 and then stopped, and the scanning of the drawing light beam LB along the third line scanning SC3 is performed, and the respective units are operated in this order.

如上所述,基準圖案RMP,係設定成形成在旋轉圓筒DR外周面之彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2,較上述描繪線之長度LBL小。因此、當投射第1行掃描SC1,第2行掃描SC2及第3行掃描SC3之描繪光束LB時,描繪光束LB至少照射於交點部Cr1、Cr2。線圖案RL1、RL2係於旋轉圓筒DR之表面以凹凸形成。當將旋轉圓筒DR表面之凹凸之段差量作成特定條件時,描繪光束LB投射於線圖案RL1、RL2而產生之反射光,會部分的產生反射強度之差。例如,如圖16所示,線圖案RL1、RL2係旋轉圓筒DR表面之凹部時,當描繪光束LB投射於線圖案RL1、RL2時,於線圖案RL1、RL2反射之反射光即被光電感測器31Cs於亮視野受光。 As described above, the reference pattern RMP is set so that the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 intersecting each other on the outer circumferential surface of the rotating cylinder DR are smaller than the length LBL of the drawing line. Therefore, when the drawing light beam LB of the first line scanning SC1, the second line scanning SC2, and the third line scanning SC3 is projected, the drawing light beam LB is irradiated at least to the intersection portions Cr1 and Cr2. The line patterns RL1, RL2 are formed on the surface of the rotating cylinder DR by irregularities. When the step difference of the unevenness on the surface of the rotating cylinder DR is made to a specific condition, the reflected light generated by the drawing light beam LB projected on the line patterns RL1 and RL2 partially produces a difference in reflection intensity. For example, as shown in FIG. 16, when the line patterns RL1, RL2 are the concave portions of the surface of the cylinder DR, when the drawing light beam LB is projected on the line patterns RL1, RL2, the reflected light reflected by the line patterns RL1, RL2 is the photo-inductor. The detector 31Cs receives light in a bright field.

控制部16根據來自光電感測器31Cs之輸出訊號,檢測基準圖案RMP之邊緣位置psc1。例如,控制部16根據第1行掃描SC1時從光電感測器31Cs所得之輸出訊號,儲存第1行掃描位置資料Dsc1、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。 The control unit 16 detects the edge position psc1 of the reference pattern RMP based on the output signal from the photodetector 31Cs. For example, the control unit 16 stores the intermediate value mpsc1 of the first line scanning position data Dsc1 and the edge position psc1 of the reference pattern RMP based on the output signal obtained from the photodetector 31Cs when the SC1 is scanned in the first row.

其次,控制部16根據第2行掃描SC2時從光電感測器31Cs所得之輸出訊號,儲存第2行掃描位置資料Dsc2、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。此外,控制部16根據第3行掃描SC3時從光電感測器31Cs所得之輸出訊號,儲存第3行掃描位置資料Dsc3、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。 Next, the control unit 16 stores the intermediate value mpsc1 of the second line scanning position data Dsc2 and the edge position psc1 of the reference pattern RMP based on the output signal obtained from the photodetector 31Cs when the SC2 is scanned in the second line. Further, the control unit 16 stores the intermediate value mpsc1 of the third-line scanning position data Dsc3 and the edge position psc1 of the reference pattern RMP based on the output signal obtained from the photo-detector 31Cs when the SC3 is scanned in the third row.

控制部16從第1行掃描位置資料Dsc1,第2行掃描位置資料Dsc2及第3行掃描位置資料Dsc3、與複數個基準圖案RMP之邊緣位置psc1之中間值mpsc1,透過運算求出彼此交叉之2條線圖案RL1、RL2之交 點部Cr1、Cr2之座標位置。其結果,控制部16亦可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC1之關係。針對其他描繪單元UW2~5亦同樣的,控制部16可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC2~OC5(參照圖11)之關係。又,上述中間值mpsc1亦可從從光電感測器31Cs輸出之訊號之峰值求出。 The control unit 16 crosses the intermediate value mpsc1 between the first line scanning position data Dsc1, the second line scanning position data Dsc2 and the third line scanning position data Dsc3, and the edge position psc1 of the plurality of reference patterns RMP by calculation. The intersection of 2 line patterns RL1 and RL2 The coordinate position of the points Cr1 and Cr2. As a result, the control unit 16 can calculate the relationship between the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start position OC1. Similarly to the other drawing units UW2 to 5, the control unit 16 can calculate the relationship between the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start positions OC2 to OC5 (see FIG. 11). Further, the intermediate value mpsc1 can also be obtained from the peak value of the signal output from the photodetector 31Cs.

以上,針對於線圖案RL1、RL2反射之反射光由光電感測器31Cs在亮視野受光之情形作了說明,但光電感測器31Cs亦可將於線圖案RL1、RL2反射之反射光在暗視野受光。圖17係以示意方式顯示將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器的說明圖。圖18係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器輸出之訊號的說明圖。如圖17所示,校準檢測系31,在中繼透鏡94與光電感測器31Cs之間配置具有環帶狀光穿透部之遮光構件31f。因此、光電感測器31Cs,係受光於線圖案RL1、RL2反射之反射光中之邊緣散射光或繞射光。例如,如圖18所示,線圖案RL1、RL2係旋轉圓筒DR表面之凹部時,當描繪光束LB投射於線圖案RL1、RL2時,光電感測器31Cs即將於線圖案RL1、RL2反射之反射光於暗視野加以受光。 The above description is directed to the case where the reflected light reflected by the line patterns RL1, RL2 is received by the photo-inductor 31Cs in the bright field, but the photo-inductor 31Cs may also reflect the reflected light in the line patterns RL1, RL2 in the dark. The field of view is exposed to light. Fig. 17 is an explanatory view showing, in a schematic manner, a photodetector that receives reflected light from a reference pattern of a rotating cylinder in a dark field. Fig. 18 is an explanatory view showing, in a schematic manner, a signal output from a photodetector that receives reflected light from a reference pattern of a rotating cylinder in a dark field. As shown in FIG. 17, the calibration detecting system 31 is provided with a light blocking member 31f having an endless belt-shaped light transmitting portion between the relay lens 94 and the photodetector 31Cs. Therefore, the photodetector 31Cs is received by the edge scattered light or diffracted light reflected by the line patterns RL1, RL2. For example, as shown in FIG. 18, when the line patterns RL1, RL2 are the concave portions of the surface of the cylinder DR, when the drawing light beam LB is projected on the line patterns RL1, RL2, the photodetector 31Cs is reflected by the line patterns RL1, RL2. The reflected light is received by the dark field.

控制部16根據從光電感測器31Cs輸出之訊號,檢測基準圖案RMP之邊緣位置pscd1。例如,控制部16根據第1行掃描SC1時從光電感測器31Cs所得之輸出訊號,儲存第1行掃描位置資料Dsc1、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。其次,控制部16根據第2行掃描SC2時從光電感測器31Cs所得之輸出訊號,儲存第2行掃描位置資料Dsc2、 與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。控制部16根據第3行掃描SC3時從光電感測器31Cs所得之輸出訊號,儲存第3行掃描位置資料Dsc3、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。 The control unit 16 detects the edge position pscd1 of the reference pattern RMP based on the signal output from the photodetector 31Cs. For example, the control unit 16 stores the intermediate value mpscd1 of the first line scanning position data Dsc1 and the edge position pscd1 of the reference pattern RMP based on the output signal obtained from the photodetector 31Cs when the SC1 is scanned in the first row. Next, the control unit 16 stores the second line scanning position data Dsc2 based on the output signal obtained from the photodetector 31Cs when the SC2 is scanned in the second row. The intermediate value mpscd1 with the edge position pscd1 of the reference pattern RMP. The control unit 16 stores the intermediate value mpscd1 of the third line scanning position data Dsc3 and the edge position pscd1 of the reference pattern RMP based on the output signal obtained from the photodetector 31Cs when the SC3 is scanned in the third row.

控制部16,從第1行掃描位置資料Dsc1,第2行掃描位置資料Dsc2及第3行掃描位置資料Dsc3、與複數個基準圖案RMP之邊緣位置pscd1之中間值mpscd1,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2。其結果,控制部16,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2之座標位置與描繪開始位置OC1之關係。 The control unit 16 crosses the scan position data Dsc1, the second line scan position data Dsc2 and the third line scan position data Dsc3, and the intermediate value mpscd1 of the edge positions pscd1 of the plurality of reference patterns RMP through the calculation to find each other. The intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2. As a result, the control unit 16 calculates the relationship between the coordinate position of the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start position OC1 by calculation.

針對其他描繪單元UW2~5亦同樣的,控制部16可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC2~OC5之關係。如以上所述,於線圖案RL1、RL2反射之反射光由光電感測器31Cs於暗視野受光之情形時,可提高複數個基準圖案RMP之邊緣位置pscd1之精度。 Similarly to the other drawing units UW2 to 5, the control unit 16 can calculate the relationship between the intersection portions Cr1 and Cr2 of the two line patterns RL1 and RL2 that intersect each other and the drawing start positions OC2 to OC5. As described above, when the reflected light reflected by the line patterns RL1, RL2 is received by the photodetector 31Cs in the dark field, the accuracy of the edge position pscd1 of the plurality of reference patterns RMP can be improved.

如圖14所示,控制部16,從於步驟S2檢測之檢測訊號求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)(步驟S3)。圖19係以示意方式顯示旋轉圓筒之基準圖案彼此之位置關係的說明圖。圖20係以示意方式顯示複數個描繪線之相對位置關係的說明圖。如上所述,配置奇數號第1描繪線LL1,第3描繪線LL3及第5描繪線LL5,如圖19所示,就第1描繪線LL1,第3描繪線LL3及第5描繪線LL5之各個,所檢測之交點部Cr1間之基準距離PL預先儲存於控制部16。同樣的,就第2描繪線LL2及第4描繪線LL4之各個,所檢測之交點部Cr1間之基準距離PL亦預先儲存於控制部16。又,就第2描繪線 LL2及第3描繪線LL3之各個,所檢測之交點部Cr1間之基準距離△PL亦預先儲存於控制部16。進一步的,就第4描繪線LL4及第5描繪線LL5之各個,所檢測之交點部Cr1間之基準距離△PL亦預先儲存於控制部16。 As shown in FIG. 14, the control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other from the detection signal detected in step S2 (step S3). Fig. 19 is an explanatory view showing the positional relationship between the reference patterns of the rotary cylinders in a schematic manner. Fig. 20 is an explanatory view showing a relative positional relationship of a plurality of drawing lines in a schematic manner. As described above, the odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged, as shown in FIG. 19, the first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5. Each of the detected reference distances PL between the intersection portions Cr1 is stored in advance in the control unit 16. Similarly, the reference distance PL between the detected intersection portions Cr1 is also stored in advance in the control unit 16 for each of the second drawing line LL2 and the fourth drawing line LL4. Again, the second drawing line Each of the LL2 and the third drawing line LL3, the reference distance ΔPL between the detected intersections Cr1 is also stored in advance in the control unit 16. Further, the reference distance ΔPL between the detected intersection portions Cr1 is also stored in advance in the control unit 16 for each of the fourth drawing line LL4 and the fifth drawing line LL5.

例如,如圖20所示,控制部16,就第1描繪線LL1之描繪開始位置OC1已根據來自原點檢測器98(參照圖7)之訊號掌握了位置關係,因此能求出交點部Cr1與描繪開始位置OC1之距離BL1。又,控制部16,就第3描繪線LL3之描繪開始位置OC3已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC3之距離BL3。從而、控制部16可根據距離BL1,距離BL3及基準距離PL求出描繪開始位置OC1與描繪開始位置OC3之位置關係,儲存沿描繪線LL1、LL3掃描之描繪光束LB之原點間之原點間距離△OC13。同樣的,控制部16,就第5描繪線LL5之描繪開始位置OC5已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC5之距離BL5。從而、控制部16可根據距離BL3、距離BL5及基準距離PL求出描繪開始位置OC3與描繪開始位置OC5之位置關係,儲存沿描繪線LL3、LL5掃描之描繪光束LB之原點間之原點間距離△OC35。 For example, as shown in FIG. 20, the control unit 16 grasps the positional relationship based on the signal from the origin detector 98 (see FIG. 7) in the drawing start position OC1 of the first drawing line LL1, so that the intersection portion Cr1 can be obtained. The distance BL1 from the drawing start position OC1. Further, since the control unit 16 has detected the position by the origin detector 98 in the drawing start position OC3 of the third drawing line LL3, the distance BL3 between the intersection portion Cr1 and the drawing start position OC3 can be obtained. Therefore, the control unit 16 can obtain the positional relationship between the drawing start position OC1 and the drawing start position OC3 based on the distance BL1, the distance BL3, and the reference distance PL, and store the origin between the origins of the drawing light beams LB scanned along the drawing lines LL1, LL3. The distance ΔOC13. Similarly, since the control unit 16 has detected the position by the origin detector 98 with respect to the drawing start position OC5 of the fifth drawing line LL5, the distance BL5 between the intersection portion Cr1 and the drawing start position OC5 can be obtained. Therefore, the control unit 16 can obtain the positional relationship between the drawing start position OC3 and the drawing start position OC5 based on the distance BL3, the distance BL5, and the reference distance PL, and store the origin between the origins of the drawing light beams LB scanned along the drawing lines LL3 and LL5. The distance between the △ OC35.

控制部16,就第2描繪線LL2之描繪開始位置OC2已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC2之距離BL2。又,控制部16,就第4描繪線LL4之描繪開始位置OC4已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC4之距離BL4。從而、控制部16可根據距離BL2,距離BL4及基準距離PL求出描繪開始位置OC2與描繪開始位置OC4之位置關係,儲存沿描繪線LL2、LL4 掃描之描繪光束LB之原點間之原點間距離△OC24。 Since the control unit 16 has detected the position by the origin detector 98 in the drawing start position OC2 of the second drawing line LL2, the distance BL2 between the intersection portion Cr1 and the drawing start position OC2 can be obtained. Further, since the control unit 16 has detected the position by the origin detector 98 in the drawing start position OC4 of the fourth drawing line LL4, the distance BL4 between the intersection portion Cr1 and the drawing start position OC4 can be obtained. Therefore, the control unit 16 can obtain the positional relationship between the drawing start position OC2 and the drawing start position OC4 based on the distance BL2, the distance BL4, and the reference distance PL, and store the along the drawing lines LL2, LL4. The origin distance ΔOC24 between the origins of the scanned drawing light beam LB.

又,控制部16,由於描繪開始位置OC1與描繪開始位置OC2係透過上述相同基準圖案RMP1求出之位置,因此能容易的儲存沿描繪線LL1、LL2掃描之描繪光束LB之原點間之原點間距離△OC12。如以上之說明,曝光裝置EX能求出複數個描繪單元UW1~UW5各個之原點(描繪開始點)之彼此的位置關係。 Further, since the drawing start position OC1 and the drawing start position OC2 are transmitted through the same reference pattern RMP1, the control unit 16 can easily store the original between the origins of the drawing light beams LB scanned along the drawing lines LL1 and LL2. The distance between points is ΔOC12. As described above, the exposure apparatus EX can determine the positional relationship between the origins (drawing start points) of the plurality of drawing units UW1 to UW5.

又,控制部16,可從在第2描繪線LL2及第3描繪線LL3檢測之交點部Cr1間之基準距離△PL,檢測描繪開始位置OC2與描繪開始位置OC3之接合誤差。進一步的,可從在第4描繪線LL4及第5描繪線LL5檢測之交點部Cr1間之基準距離△PL,檢測描繪開始位置OC4與描繪開始位置OC5之接合誤差。 Further, the control unit 16 can detect the engagement error between the drawing start position OC2 and the drawing start position OC3 from the reference distance ΔPL between the intersections Cr1 detected by the second drawing line LL2 and the third drawing line LL3. Further, the joint error between the drawing start position OC4 and the drawing start position OC5 can be detected from the reference distance ΔPL between the intersection portion Cr1 detected by the fourth drawing line LL4 and the fifth drawing line LL5.

在從各描繪線LL1~LL5之描繪開始位置OC1~OC5到描繪結束位置EC1~EC5為止之期間檢測2個交點部Cr1、Cr2。據此,即能檢測從描繪開始位置OC1~OC5到描繪結束位置EC1~EC5為止之掃描方向。其結果,控制部16可檢測各描繪線LL1~LL5相對沿中心線AX2之方向(Y方向)之角度誤差。 The two intersection portions Cr1 and Cr2 are detected during the period from the drawing start positions OC1 to OC5 of the respective drawing lines LL1 to LL5 to the drawing end positions EC1 to EC5. Accordingly, the scanning direction from the drawing start positions OC1 to OC5 to the drawing end positions EC1 to EC5 can be detected. As a result, the control unit 16 can detect the angular error of each of the drawing lines LL1 to LL5 with respect to the direction (Y direction) along the center line AX2.

控制部16,針對上述基準圖案RMP1,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。包含基準圖案RMP1之基準圖案RMP,係以一定間距(週期)Pf1、Pf2重複刻設之網格狀基準圖案。因此、控制部16針對以各間距Pf1、Pf2重複之基準圖案RMP,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),運算與複數個描繪線LL1~LL5之相對位置關 係之偏差相關之資訊。其結果,控制部16能更進一步提高對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)之精度。 The control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other with respect to the reference pattern RMP1. The reference pattern RMP including the reference pattern RMP1 is a grid-like reference pattern which is repeatedly engraved at regular intervals (periods) Pf1 and Pf2. Therefore, the control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state or the arrangement error of the plurality of drawing lines LL1 to LL5 with respect to the reference pattern RMP repeated at the respective pitches Pf1 and Pf2, and calculates and complexes the drawing lines. Relative position of LL1~LL5 Information related to deviations. As a result, the control unit 16 can further improve the accuracy of the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other.

其次,如圖14所示,控制部16進行調整描繪狀態之處理(步驟S4)。控制部16,根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以編碼器讀頭EN1、EN2檢測之標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,調整奇數號及偶數號之描繪單元UW1~UW5之描繪位置。編碼器讀頭EN1、EN2可根據上述標尺部(旋轉圓筒DR)GPa、GPb檢測基板P之搬送量。 Next, as shown in FIG. 14, the control unit 16 performs a process of adjusting the drawing state (step S4). The control unit 16 adjusts information (calibration information) corresponding to the arrangement state or the arrangement error of the plurality of drawing lines LL1 to LL5 and the scale portion (rotary cylinder DR) GPa, GPb detected by the encoder heads EN1 and EN2. At the position of the rotation angle, the drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5 are adjusted. The encoder read heads EN1 and EN2 can detect the conveyance amount of the substrate P based on the scale portions (rotary cylinders DR) GPa and GPb.

圖21,與先前之圖12同樣的,係以示意方式顯示基板之每單位時間之移動距離與移動距離內所含之描繪線數之關係的說明圖。如圖21所示,編碼器讀頭EN1、EN2可檢測並儲存基板P之每單位時間之移動距離△X。又,亦可藉由上述對準顯微鏡AM1、AM2逐次檢測複數個對準標記Ks1~Ks3,以求出並儲存移動距離△X。 Fig. 21 is an explanatory view showing, in a schematic manner, the relationship between the moving distance per unit time of the substrate and the number of drawing lines included in the moving distance, similarly to the previous Fig. 12. As shown in FIG. 21, the encoder read heads EN1, EN2 can detect and store the moving distance ΔX per unit time of the substrate P. Further, the plurality of alignment marks Ks1 to Ks3 may be sequentially detected by the alignment microscopes AM1 and AM2 to obtain and store the movement distance ΔX.

於基板P之每單位時間之移動距離△X,以描繪單元UW1描繪之複數個描繪線LL1係以光束點光SP之光束線SPL1、SPL2及SPL3描繪,以各個光束點光SP之點直徑Xs之約1/2於X方向(及Y方向)重疊之方式掃描。同樣的,描繪線LL1之描繪終端PTb側之光束點光SP與描繪線LL2之描繪終端PTb側之光束點光SP,係隨著基板P往長條方向之移動於基板P之寬度方向以重疊距離CXs接合。 The moving distance ΔX per unit time of the substrate P, the plurality of drawing lines LL1 drawn by the drawing unit UW1 are drawn by the beam lines SPL1, SPL2 and SPL3 of the beam spot light SP, with the spot diameter Xs of the respective beam spot lights SP About 1/2 is scanned in such a manner that the X direction (and the Y direction) overlap. Similarly, the beam spot light SP on the drawing terminal PTb side of the drawing line LL1 and the beam spot light SP on the drawing terminal PTb side of the drawing line LL2 are overlapped in the width direction of the substrate P as the substrate P moves in the strip direction. Engaged by the CXs.

例如,當旋轉圓筒DR上下動時,奇數號及偶數號描繪單元UW1~UW5之X方向描繪位置即產生偏移,有可能產生例如X方向之倍率差。控制部16,使旋轉圓筒DR搬送之基板P之搬送速度(移動速度)慢 時,光束線SPL1、SPL2及SPL3之X方向間隔距離CXs變小,可調整X方向之描繪倍率變小。相反的,當加快旋轉圓筒DR搬送之基板P之搬送速度(移動速度)時,光束線SPL1、SPL2及SPL3之X方向間隔距離CXs即變大,可調整X方向之描繪倍率變大。以上,針對描繪線LL1參照圖21作了說明,針對其他之描繪線LL2~LL5亦同。控制部16,根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以編碼器讀頭EN1、EN2檢測之標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,變更在基板P之長條方向之基板P每單位時間之移動距離△X、與該移動距離內所含之光束線SPL1、SPL2及SPL3之數量的關係。因此,控制部16可調整奇數號及偶數號描繪單元UW1~UW5於X方向之描繪位置。 For example, when the rotating cylinder DR moves up and down, the X-direction drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5 are shifted, and there is a possibility that, for example, a magnification difference in the X direction is generated. The control unit 16 causes the transport speed (moving speed) of the substrate P transported by the rotating cylinder DR to be slow. When the X-direction separation distance CXs of the beam lines SPL1, SPL2, and SPL3 is small, the drawing magnification in the X direction can be adjusted to be small. On the other hand, when the transport speed (moving speed) of the substrate P transported by the rotating cylinder DR is increased, the X-direction distance CXs of the beam lines SPL1, SPL2, and SPL3 becomes larger, and the drawing magnification in the X direction can be adjusted to be larger. The above description has been made with reference to FIG. 21 for the drawing line LL1, and the same applies to the other drawing lines LL2 to LL5. The control unit 16 adjusts information (calibration information) corresponding to the arrangement state or the arrangement error of the plurality of drawing lines LL1 to LL5 and the scale portion (rotary cylinder DR) GPa, GPb detected by the encoder heads EN1 and EN2. The rotation angle position changes the relationship between the movement distance ΔX per unit time of the substrate P in the longitudinal direction of the substrate P and the number of the beam lines SPL1, SPL2, and SPL3 included in the movement distance. Therefore, the control unit 16 can adjust the drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5 in the X direction.

圖22係以示意方式說明與脈衝光源之系統時脈同步發光之脈衝光的說明圖。以下,針對描繪線LL2亦參照圖21加以說明,針對描繪線LL1、LL3~LL5亦同。光源裝置CNT可與作為系統時脈SQ之脈衝訊號wp同步擊出光束點光SP。藉由改變系統時脈SQ之頻率Fz,脈衝訊號wp之脈衝間隔△wp(=1/Fz)亦改變。該時間性的脈衝間隔△wp,於描繪線LL2上,係對應每一脈衝之點光SP之主掃描方向之間隔距離CXs。控制部16,係使描繪光束LB之光束點光SP沿基板P上之描繪線LL2掃描描繪線之長度LBL。 Fig. 22 is an explanatory view showing, in a schematic manner, pulse light of a system clock synchronized with a pulse light source. Hereinafter, the drawing line LL2 will be described with reference to FIG. 21, and the drawing lines LL1, LL3 to LL5 are also the same. The light source device CNT can strike the beam spot light SP in synchronization with the pulse signal wp as the system clock SQ. By changing the frequency Fz of the system clock SQ, the pulse interval Δwp (=1/Fz) of the pulse signal wp also changes. The temporal pulse interval Δwp is plotted on the drawing line LL2 by the distance CXs of the main scanning direction of the spot light SP for each pulse. The control unit 16 causes the beam spot light SP of the drawing light beam LB to scan the length LBL of the drawing line along the drawing line LL2 on the substrate P.

控制部16,具備在描繪光束LB沿描繪線LL2進行掃描之期間,部分的變更系統時脈SQ之週期,以使脈衝間隔△wp在描繪線LL2中之任意位置増減的功能。例如,原本之系統時脈SQ為100MHz之場合,控制部16,在掃描描繪線之長度LBL之期間以一定時間間隔(週期)部分的 將系統時脈SQ變更為例如101MHz(或99MHz)。其結果,光束點光SP在描繪線之長度LBL之數量即増減。換言之,控制部16,在掃描描繪線之長度LBL之期間,以既定次(1以上)之週期間隔部分的増減系統時脈SQ之工作比。據此,光源CNT產生之光束點光SP之間隔即變化脈衝間隔△wp之變化分,光束點光SP彼此之重疊距離CXs變化。而Y方向之描繪始端PTa與描繪終端PTb之距離,看起來即伸縮。 The control unit 16 has a function of changing the period of the system clock SQ in the period in which the drawing light beam LB is scanned along the drawing line LL2, so that the pulse interval Δwp is reduced at any position in the drawing line LL2. For example, when the original system clock SQ is 100 MHz, the control unit 16 has a certain time interval (period) during the scanning of the length LBL of the drawing line. The system clock SQ is changed to, for example, 101 MHz (or 99 MHz). As a result, the number of beam spot lights SP at the length LBL of the drawing line is reduced. In other words, the control unit 16 reduces the operating ratio of the system clock SQ at a predetermined interval (1 or more) during the scanning of the length LBL of the drawing line. Accordingly, the interval between the beam spot lights SP generated by the light source CNT, that is, the variation of the variation pulse interval Δwp, and the overlapping distance CXs of the beam spot lights SP change. The distance between the beginning end PTa of the Y direction and the drawing terminal PTb seems to be stretched.

舉一例而言,描繪線之長度LBL為30mm時,將其11等分而就每一約3mm之描繪長(週期間隔)僅使1處之系統時脈SQ之脈衝間隔△wp増減。脈衝間隔△wp之増減量,如圖13之說明,若將不會招致隨著相鄰2個點光SP之間隔距離CXs之變化的積算輪廓(強度分布)之大幅悪化之範圍、例如將基準之間隔距離CSx設為點光之直徑Xs(3μm)之50%的話,相對其設為約±15%左右。若設脈衝間隔△wp之増減為+10%(間隔距離CSx為點光之直徑Xs之60%)的話,在長度LBL之描繪線中之離散的10處之各處,1脈衝分之點光會產生往主掃描方向延伸直徑Xs之10%分的位置偏移。其結果,描繪後之描繪線之長度LBL,會相對30mm延長3μm。此係代表描繪於基板P上之圖案往Y方向擴大0.01%(100ppm)之意。據此,即使是在基板P於Y方向伸縮之情形時,亦能因應使描繪圖案於Y方向伸縮進行曝光。 For example, when the length LBL of the drawing line is 30 mm, 11 is equally divided, and the drawing interval (cycle interval) of about 3 mm is reduced by only the pulse interval Δwp of the system clock SQ at one position. The amount of decrease in the pulse interval Δwp, as illustrated in Fig. 13, will not cause a large range of the integrated contour (intensity distribution) which varies with the distance CXs between adjacent two spot lights SP, for example, the reference When the interval distance CSx is 50% of the diameter Xs (3 μm) of the spot light, it is set to be about ±15%. If the pulse interval Δwp is reduced to +10% (the spacing distance CSx is 60% of the diameter Xs of the spot light), a pulse of 1 pulse is scattered everywhere in the drawing line of the length LBL. A positional shift of 10% of the diameter Xs extending in the main scanning direction is generated. As a result, the length LBL of the drawing line after drawing is extended by 3 μm with respect to 30 mm. This represents that the pattern drawn on the substrate P is enlarged by 0.01% (100 ppm) in the Y direction. According to this, even when the substrate P is expanded and contracted in the Y direction, the drawing pattern can be stretched and contracted in the Y direction.

將增減脈衝間隔△wp之位置,例如,設成能於描繪線LL1~LL5之1次掃描,例如預設於系統時脈SQ之每100脈衝、每200脈衝、‧‧‧之任意值的構成。如此一來,即能將描繪圖案之主掃描方向(Y方向)之伸縮量在比較大範圍內進行變更,因應基板P之伸縮及變形,動態的進行 倍率修正。因此,於本實施形態之曝光裝置EX之控制部16中包含系統時脈SQ之產生電路,該產生電路具有脈衝間隔△wp以一定之原時脈訊號為系統時脈SQ產生之時脈振盪部、與輸入該原時脈訊號計數(count)預先設定之脈衝數分後將系統時脈SQ之次一時脈脈衝產生為止之時間相對脈衝間隔△wp使之増減之時間遷移部。又,描繪線(長度LBL)中,使系統時脈SQ之脈衝間隔△wp増減之部分之數量,雖係視待描繪之圖案之Y方向之倍率修正比(ppm)大致決定,最少時,可以是對應長度LBL之點光SP之掃描時間Ts中之至少1處。 The position of the pulse interval Δwp is increased or decreased, for example, to be able to scan one line of the lines LL1 to LL5, for example, every 100 pulses, every 200 pulses, ‧ ‧ of the system clock SQ Composition. In this way, the amount of expansion and contraction in the main scanning direction (Y direction) of the drawing pattern can be changed over a relatively large range, and the substrate P can be dynamically moved in accordance with expansion and contraction and deformation. Magnification correction. Therefore, the control unit 16 of the exposure apparatus EX of the present embodiment includes a system clock generation circuit SQ having a pulse interval Δwp with a predetermined original clock signal as a clock oscillating portion generated by the system clock SQ. And a time shifting unit that reduces the time of the next clock pulse of the system clock SQ by inputting the pulse number of the original clock signal count (count) to the pulse interval Δwp. Further, in the drawing line (length LBL), the number of portions in which the pulse interval Δwp of the system clock SQ is reduced is roughly determined depending on the magnification correction ratio (ppm) in the Y direction of the pattern to be drawn, and at the minimum, It is at least one of the scanning time Ts of the spot light SP corresponding to the length LBL.

又,回應此種脈衝間隔△wp部分増減之系統時脈SQ而從脈衝雷射之光源裝置CNT輸出之脈衝光束,係對描繪單元UW1~UW5之各個共通的供應,因此,以描繪線LL1~LL5之各個描繪之圖案會於Y方向以相同比率伸縮。因此,如圖12(或圖11)所說明般,為維持於Y方向相鄰之描繪線間之接合精度,係修正描繪時序,以使描繪線LL1~LL5各個之描繪開始位置OC1~OC5(或描繪結束位置EC1~EC5)往Y方向移動。再者,圖4中所示之光偏向器(AQM)81之ON/OFF切換,雖係回應作為描繪資料送出之串列位元列(位元值「0」或「1」之排列)進行,該位元值之送出,可與脈衝間隔△wp部分増減之系統時脈SQ之脈衝訊號wp(圖22)同步。具體而言,在產生1個脈衝訊號wp致產生下1個脈衝訊號wp為止之期間,將1個位元值送出至光偏向器(AOM)81之驅動電路,甘味元值為「1」、而前1個位元值為「0」時,將光偏向器(AOM)81從OFF狀態切換為ON狀態即可。 Further, the pulse beam outputted from the pulse laser light source device CNT in response to the system clock SQ whose pulse interval Δwp is partially reduced is supplied to each of the drawing units UW1 to UW5 in common, and therefore, the line LL1 is drawn. Each of the patterns depicted by LL5 will expand and contract at the same ratio in the Y direction. Therefore, as shown in FIG. 12 (or FIG. 11), in order to maintain the bonding precision between the drawing lines adjacent in the Y direction, the drawing timing is corrected so that the drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 are ( Or the drawing end position EC1~EC5) moves in the Y direction. Furthermore, the ON/OFF switching of the optical deflector (AQM) 81 shown in FIG. 4 is performed in response to the serialized bit string (arrangement of the bit value “0” or “1”) which is sent as the drawing data. The bit value is sent out in synchronization with the pulse signal wp (Fig. 22) of the system clock SQ whose pulse interval Δwp is partially reduced. Specifically, during the period in which one pulse signal wp is generated to generate the next pulse signal wp, one bit value is sent to the driving circuit of the optical deflector (AOM) 81, and the sweetness value is "1". When the first bit value is "0", the optical deflector (AOM) 81 may be switched from the OFF state to the ON state.

控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態 或彼此之配置誤差之調整資訊(校準資訊)及可檢測旋轉圓筒DR兩端部之偏移之變位計YN1、YN2、YN3、YN4所檢測之資訊,調整以奇數號及偶數號描繪單元UW1~UW5進行之Y方向之描繪位置,以抵銷因旋轉圓筒DR之旋轉偏移所產生之Y方向誤差。又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及可檢測旋轉圓筒DR兩端部之偏移之變位計YN1、YN2、YN3、YN4所檢測之資訊,變更以奇數號及偶數號描繪單元UW1~UW5進行之Y方向之長度(描繪線之長度LBL),以抵銷因旋轉圓筒DR之旋轉偏移所產生之Y方向之誤差。 The control unit 16 can be configured according to the configuration state of the plurality of drawing lines LL1 to LL5 Or the adjustment information of each other's configuration error (calibration information) and the information detected by the displacement gauges YN1, YN2, YN3, YN4 which can detect the offset between the two ends of the rotating cylinder DR, and adjust the unit with odd and even numbers The UW1 to UW5 are drawn in the Y direction to offset the Y-direction error caused by the rotational offset of the rotating cylinder DR. Further, the control unit 16 can adjust the information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other, and the displacement meter YN1 which can detect the offset between the both ends of the rotating cylinder DR. The information detected by YN2, YN3, and YN4 is changed by the length of the Y direction (the length of the drawing line LBL) by the odd-numbered and even-numbered drawing units UW1 to UW5 to offset the rotation offset caused by the rotating cylinder DR. The error in the Y direction.

又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以對準顯微鏡AM1、AM2檢測之資訊,調整以奇數號及偶數號描繪單元UW1~UW5進行之X方向或Y方向之描繪位置,以抵銷基板P之X方向或Y方向之誤差。 Further, the control unit 16 can adjust the odd-numbered and even-numbered numbers according to the arrangement state of the plurality of drawing lines LL1 to LL5 or the adjustment information of the arrangement errors (calibration information) and the information detected by the alignment microscopes AM1 and AM2. The drawing positions in the X direction or the Y direction by the drawing units UW1 to UW5 are used to offset the error in the X direction or the Y direction of the substrate P.

第1實施形態之曝光裝置EX,如上述般包含以來自複數個描繪單元UW1~UW5各個之描繪光束LB,以包含形成在基板P上之複數個描繪線LL1~LL5之描繪面內之既定點旋轉軸I為中心,於前述描繪面內相對第1光學平台23使第2光學平台25位移之作為位移修正機構之移動機構24。藉由對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),複數個描繪線LL1~LL5之全體對X方向及Y方向中之至少1者有誤差時,控制部16,可對移動機構24之驅動部進行驅動控制,使第2光學平台25往X方向及Y方向之至少一方位移抵消誤差之位移量。 The exposure apparatus EX according to the first embodiment includes the drawing light beams LB from the plurality of drawing units UW1 to UW5 as described above, and includes predetermined points in the drawing plane of the plurality of drawing lines LL1 to LL5 formed on the substrate P. The rotation axis I is a center, and the movement mechanism 24 as a displacement correction mechanism that displaces the second optical table 25 with respect to the first optical stage 23 in the drawing plane. When the entire plurality of drawing lines LL1 to LL5 have errors in at least one of the X direction and the Y direction, corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the adjustment information (calibration information) of the arrangement errors of the plurality of drawing lines LL1 to LL5, The control unit 16 can drive and control the driving unit of the moving mechanism 24 to shift the second optical table 25 to at least one of the X direction and the Y direction to cancel the offset amount of the error.

當使第2光學平台25往X方向及Y方向之至少一方位移時,圖6所示之第4反射鏡59即往X方向或Y方向變位該位移量。特別是第4反射鏡59之Y方向變位,在使來自第3反射鏡58之描繪光束LB反射向+Y方向時,使之往Z方向位移。因此,藉由第1光學系41中之光束位移機構44,修正該往Z方向之位移。據此,對第4反射鏡59之後之第2光學系42及第3光學系43,即能維持光束LB通過正確的光路。 When the second optical table 25 is displaced in at least one of the X direction and the Y direction, the fourth mirror 59 shown in FIG. 6 is displaced in the X direction or the Y direction. In particular, the fourth mirror 59 is displaced in the Y direction, and when the drawing light beam LB from the third mirror 58 is reflected in the +Y direction, it is displaced in the Z direction. Therefore, the displacement in the Z direction is corrected by the beam displacement mechanism 44 in the first optical system 41. As a result, the second optical system 42 and the third optical system 43 after the fourth reflecting mirror 59 can maintain the light beam LB through the correct optical path.

又,於第1實施形態之曝光裝置EX中,因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),而使複數個描繪線LL1~LL5對X方向及Y方向之至少1個有誤差時,控制部16,可對移動機構24之驅動部進行驅動控制,使形成在基板P上之描繪線LL1~LL5往X方向或Y方向微幅移動抵消誤差之位移量。 Further, in the exposure apparatus EX of the first embodiment, the plurality of drawing lines LL1 to LL5 are aligned in the X direction by the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other. When there is an error in at least one of the Y directions, the control unit 16 can drive and control the driving unit of the moving mechanism 24 to slightly shift the drawing lines LL1 to LL5 formed on the substrate P in the X direction or the Y direction. The amount of displacement.

再者,第1實施形態之曝光裝置EX中,因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),使複數個描繪線LL1~LL5中之奇數號或偶數號描繪線對X方向及Y方向之至少1個有誤差時,控制部16,可以抵消誤差之位移量之方式,對光束位移機構45進行驅動控制,以使形成在基板P上之偶數號描繪線LL2、LL4往X方向或Y方向微幅移動,以微調與形成在基板P上之奇數號描繪線LL1、LL3、LL5之相對位置關係。 Further, in the exposure apparatus EX of the first embodiment, the odd number of the plurality of drawing lines LL1 to LL5 is determined by the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other. When the even-numbered drawing line has an error in at least one of the X direction and the Y direction, the control unit 16 can drive-control the beam displacement mechanism 45 so as to cancel the displacement amount of the error so as to form an even number on the substrate P. The number drawing lines LL2, LL4 are slightly moved in the X direction or the Y direction to finely adjust the relative positional relationship with the odd-numbered drawing lines LL1, LL3, LL5 formed on the substrate P.

又,控制部16,亦可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以變位計YN1、YN2、YN3、YN4或對準顯微鏡AM1、AM2檢測之資訊,調整描繪單元UW1~UW5之Y倍率。例如,f-θ透鏡系85所含之遠心f-θ透鏡之像高與入射角成 正比。因此,僅調整描繪單元UW1之Y倍率時,控制部16,可根據調整資訊(校準資訊)及以變位計YN1、YN2、YN3、YN4或對準顯微鏡AM1、AM2檢測之資訊,個別調整f-θ透鏡系85之焦點距離f,據以調整Y倍率。此整調整機構中,可組合例如用以進行倍率修正之彎板(bending plate)、遠心f-θ透鏡之倍率修正機構、用以進行位移調整之halving(可傾斜之平行平板)中之任一以上。此外,將以一定旋轉速度旋轉之旋轉多面鏡97之旋轉速度作成可略為改變,即可使與系統時脈SQ同步描繪之各點光SP(脈衝光)之間隔距離CXs略為改變(將相鄰點光彼此之重疊量略微錯開),結果亦能調整Y倍率。 Moreover, the control unit 16 may also adjust information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other, and the displacement meter YN1, YN2, YN3, YN4 or the alignment microscope AM1. The information of the AM2 detection adjusts the Y magnification of the drawing units UW1 to UW5. For example, the image height of the telecentric f-theta lens contained in the f-theta lens system 85 is proportional to the angle of incidence. Therefore, only the Y magnification of the drawing unit UW1 is adjusted. The control unit 16 can individually adjust the focus distance f of the f-θ lens system 85 according to the adjustment information (calibration information) and the information detected by the displacement meters YN1, YN2, YN3, YN4 or the alignment microscopes AM1, AM2. According to the adjustment of Y rate. In the adjustment mechanism, for example, a bending plate for magnification correction, a magnification correction mechanism for a telecentric f-θ lens, and a halving for tilt adjustment may be combined. Any one of them. Further, the rotational speed of the rotating polygon mirror 97 rotated at a certain rotational speed can be slightly changed, so that the distance CXs of the spot lights SP (pulse light) drawn in synchronization with the system clock SQ can be slightly changed (to be adjacent) The amount of overlap of the spot lights is slightly staggered), and the Y-rate can also be adjusted as a result.

第1實施形態之曝光裝置EX,如上述般包含以來自複數個描繪單元UW1~UW5各個之描繪光束LB,以包含形成在基板P上之複數個描繪線LL1~LL5之描繪面內之既定點旋轉軸I為中心,於前述描繪面內相對第1光學平台23使第2光學平台25位移之作為位移修正機構之移動機構24。因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),使複數個描繪線LL1~LL5相對Y方向有角度誤差,控制部16,可以對移動機構24之驅動部進行驅動控制,以使第2光學平台25旋轉抵銷角度誤差之旋轉量。 The exposure apparatus EX according to the first embodiment includes the drawing light beams LB from the plurality of drawing units UW1 to UW5 as described above, and includes predetermined points in the drawing plane of the plurality of drawing lines LL1 to LL5 formed on the substrate P. The rotation axis I is a center, and the movement mechanism 24 as a displacement correction mechanism that displaces the second optical table 25 with respect to the first optical stage 23 in the drawing plane. The plurality of drawing lines LL1 to LL5 have an angular error with respect to the Y direction due to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other, and the control unit 16 can be used for the moving mechanism 24 The drive unit performs drive control to rotate the second optical table 25 to offset the amount of rotation of the angular error.

又,當產生需對各描繪單元UW1~UW5個別的進行旋轉修正時,可藉由使圖8所示之f-θ透鏡系85與第2柱面透鏡86繞光軸AXf微幅旋轉,據以使各描繪線LL1~LL5於基板P上個別的微幅旋轉(傾斜)。以旋轉多面鏡97掃描之光束LB,於非掃描方向係沿柱面透鏡86之母線成像(聚光),因此藉由柱面透鏡86繞光軸AXf之旋轉,可使各描繪線LL1 ~LL5旋轉(傾斜)。 Further, when it is necessary to perform rotation correction for each of the drawing units UW1 to UW5, the f-θ lens system 85 and the second cylindrical lens 86 shown in FIG. 8 can be slightly rotated about the optical axis AXf. The respective drawing lines LL1 to LL5 are individually rotated (tilted) on the substrate P by a slight amount. The light beam LB scanned by the rotating polygon mirror 97 is imaged (concentrated) along the bus bar of the cylindrical lens 86 in the non-scanning direction, so that the drawing line LL1 can be rotated by the cylindrical lens 86 about the optical axis AXf. ~LL5 rotates (tilt).

第1實施形態之曝光裝置EX,只要處理上述步驟S4之控制裝置進行之描繪位置調整之處理之至少1種即可。又,第1實施形態之曝光裝置EX,亦可組合上述步驟S4之控制裝置進行之描繪位置調整之處理以進行處理。 The exposure apparatus EX of the first embodiment may be processed by at least one of the processing of the drawing position adjustment by the control device of the above-described step S4. Further, in the exposure apparatus EX of the first embodiment, the processing of the drawing position adjustment performed by the control device of the above-described step S4 may be combined to perform processing.

藉由以上說明之基板處理裝置之調整方法,於第1實施形態之曝光裝置EX,可省去(無需)用以抑制於基板P之寬度方向(Y方向)相鄰之圖案PT1~PT5彼此之接合誤差的測試曝光,或大幅減少其次數。因此,第1實施形態之曝光裝置EX,可縮短測試曝光、乾燥及顯影製程、曝光結果之確認作業等需耗費時間之校準作業。此外,第1實施形態之曝光裝置EX,可抑制因測試曝光而反饋之次數分之基板P的浪費。第1實施形態之曝光裝置EX,可更早的取得對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。第1實施形態之曝光裝置EX,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),預先進行修正,據以容易的修正在X方向或Y方向之位移、旋轉、倍率等之各成分。又,第1實施形態之曝光裝置EX,可提高在基板P上重疊曝光之精度。 According to the method of adjusting the substrate processing apparatus described above, in the exposure apparatus EX of the first embodiment, it is possible to omit (not need to) prevent the patterns PT1 to PT5 adjacent to each other in the width direction (Y direction) of the substrate P from each other. Test exposure for joint errors, or significantly reduce the number of times. Therefore, in the exposure apparatus EX of the first embodiment, it is possible to shorten the time required for the calibration operation such as the test exposure, the drying and development process, and the confirmation of the exposure result. Further, in the exposure apparatus EX of the first embodiment, it is possible to suppress the waste of the substrate P by the number of times of feedback due to the test exposure. In the exposure apparatus EX of the first embodiment, adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other can be obtained earlier. The exposure apparatus EX according to the first embodiment can be corrected in advance based on the arrangement state (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other, and can be easily corrected in the X direction or the Y direction. The components of displacement, rotation, and magnification. Further, in the exposure apparatus EX of the first embodiment, the precision of overlapping exposure on the substrate P can be improved.

又,第1實施形態之曝光裝置EX,雖係以光偏向器81包含聲光元件,以旋轉多面鏡97進行描繪光束LB之點掃描為例作了說明,但除點掃描之外,亦可以是使用DMD(Digital Micro mirror Device)或SLM(Spatial light modulator:空間光調變器)描繪圖案之方式。 In the exposure apparatus EX of the first embodiment, the optical deflector 81 includes an acousto-optic element, and the scanning of the drawing beam LB by the rotating polygon mirror 97 is described as an example. However, in addition to the dot scanning, It is a method of drawing a pattern using a DMD (Digital Micro Mirror Device) or an SLM (Spatial Light Modulator).

〔第2實施形態〕 [Second Embodiment]

其次,說明第2實施形態之曝光裝置EX。又,於第2實施形態,為扁免與第1實施形態重複之記載,僅針對與第1實施形態相異之部分進行說明,針對與第1實施形態相同之構成要素係賦予與第1實施形態相同符號加以說明。 Next, an exposure apparatus EX according to the second embodiment will be described. In the second embodiment, the description of the first embodiment is repeated, and only the differences from the first embodiment will be described, and the same components as those of the first embodiment will be assigned to the first embodiment. The same symbols are used to illustrate.

第2實施形態之曝光裝置EX中,校準檢測系31之光電感測器31Cs並非檢測基準圖案(亦可作為基準標記加以利用)RMP而是檢測基板P上之對準標記Ks1~Ks3之反射光(散射光)。對準標記Ks1~Ks3係配置在通過複數個描繪單元UW1~UW5之各描繪線LL1~LL5之任一者之Y方向之基板P上之位置。當描繪光束LB之點光SP掃描到對準標記Ks1~Ks3時,於對準標記Ks1~Ks3反射之散射光即被光電感測器31Cs於亮視野或暗視野受光。 In the exposure apparatus EX of the second embodiment, the photodetector 31Cs of the calibration detecting system 31 does not detect the reference pattern (may also be used as a reference mark) but detects the reflected light of the alignment marks Ks1 to Ks3 on the substrate P. (Scattered light). The alignment marks Ks1 to Ks3 are arranged at positions on the substrate P in the Y direction passing through any one of the drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5. When the spot light SP of the drawing light beam LB is scanned to the alignment marks Ks1 to Ks3, the scattered light reflected by the alignment marks Ks1 to Ks3 is received by the photodetector 31Cs in the bright field or the dark field.

控制部16根據從光電感測器31Cs輸出之訊號,檢測對準標記Ks1~Ks3之邊緣位置。並與第1實施形態同樣的,控制部16可從以光電感測器31Cs檢測之檢測訊號,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。 The control unit 16 detects the edge positions of the alignment marks Ks1 to Ks3 based on the signals output from the photodetector 31Cs. In the same manner as in the first embodiment, the control unit 16 can obtain adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other from the detection signal detected by the photodetector 31Cs. .

又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以對準顯微鏡AM1、AM2檢測之資訊,調整奇數號及偶數號描繪單元UW1~UW5之X方向或Y方向之描繪位置,以抵銷基板P之X方向或Y方向之誤差。當描繪光束LB之點光SP投射於對準標記Ks1~Ks3時,對準標記Ks1~Ks3上之感光層即感光,有可能於之後之製程中對準標記Ks1~Ks3潰散。因此,最好是能設置複數行對準標記Ks1~Ks3,對準顯微鏡AM1、AM2則讀取未因曝光潰散 之對準標記Ks1~Ks3。 Further, the control unit 16 can adjust the odd-numbered and even-numbered drawing based on the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other and the information detected by the alignment microscopes AM1 and AM2. The drawing positions of the units UW1 to UW5 in the X direction or the Y direction cancel the errors in the X direction or the Y direction of the substrate P. When the spot light SP of the drawing light beam LB is projected on the alignment marks Ks1 to Ks3, the photosensitive layer on the alignment marks Ks1 to Ks3 is light-sensitive, and it is possible that the alignment marks Ks1 to Ks3 are broken in the subsequent process. Therefore, it is preferable to set the complex line alignment marks Ks1 to Ks3, and the alignment microscopes AM1 and AM2 are not broken due to exposure. The alignment marks Ks1~Ks3.

因此,第2實施形態之曝光裝置EX,可於圖案描繪用資料中包含,可因曝光潰散之對準標記Ks1~Ks3之近旁以描繪光束LB之點光SP掃描,而在不希望因曝光潰散之對準標記Ks1~Ks3之近旁則以點光SP不會照射之方式,進行光偏向器(AOM)81之ON/OFF的資料。據此,可在以描繪光束LB進行曝光之同時、大致即時取得校準資訊,且亦能讀取對準標記Ks1~Ks3(基板P之位置)。 Therefore, the exposure apparatus EX of the second embodiment can be included in the pattern drawing material, and the spot light SP of the drawing light beam LB can be scanned near the alignment marks Ks1 to Ks3 of the exposure collapse, and is not expected to be broken by the exposure. In the vicinity of the alignment marks Ks1 to Ks3, the information of the ON/OFF of the optical deflector (AOM) 81 is performed so that the spot light SP does not illuminate. According to this, it is possible to obtain the calibration information substantially instantaneously while performing the exposure by the drawing light beam LB, and it is also possible to read the alignment marks Ks1 to Ks3 (the position of the substrate P).

第2實施形態之曝光裝置EX,與第1實施形態之曝光裝置EX同樣的,可省去用以抑制接合誤差之測試曝光、或大幅減少其次數。除此之外,於第2實施形態之曝光裝置EX,可在基板P曝光圖案之同時,測量對應複數個描繪線LL1~LL5之配置狀態或彼此之配置關係等之誤差資訊,及早(大致即時)取得與之對應之調整資訊(校準資訊)。因此,第2實施形態之曝光裝置EX,可根據提早測量之誤差資訊、或調整資訊(校準資訊),一邊進行元件圖案之曝光、一邊逐次進行為保持既定精度之修正及調整,而能容易的抑制於多描繪頭方式中成問題之於X方向或Y方向之位移誤差、旋轉誤差、倍率誤差等各誤差成分之描繪單元間接合精度之降低。據此,第2實施形態之曝光裝置EX,能將基板P上重疊曝光時之重疊精度維持於高狀態。 In the exposure apparatus EX of the second embodiment, similarly to the exposure apparatus EX of the first embodiment, the test exposure for suppressing the joint error can be omitted or the number of times can be greatly reduced. In addition, in the exposure apparatus EX of the second embodiment, it is possible to measure the error information of the arrangement state or the arrangement relationship of the plurality of drawing lines LL1 to LL5 at the same time as the exposure pattern of the substrate P, as early as possible (substantially ) Obtain adjustment information (calibration information) corresponding to it. Therefore, the exposure apparatus EX of the second embodiment can perform the correction of the element pattern while performing the exposure and the information (calibration information) of the early measurement, and can perform the correction and adjustment of the predetermined accuracy one by one, and can be easily performed. It is suppressed that the difference in the joint precision between the drawing units of the error components such as the displacement error, the rotation error, and the magnification error in the X-direction or the Y-direction is a problem in the multi-drawing method. According to the exposure apparatus EX of the second embodiment, the superimposition accuracy at the time of superimposing and exposing the substrate P can be maintained at a high state.

<元件製造方法> <Component Manufacturing Method>

其次,參照圖23,說明元件製造方法。圖23係顯示各實施形態之元件製造方法的流程圖。 Next, a method of manufacturing a component will be described with reference to Fig. 23 . Fig. 23 is a flow chart showing a method of manufacturing a component of each embodiment.

圖23所示之元件製造方法,首先,係進行例如使用有機EL 等自發光元件形成之顯示面板之功能、性能設計,以CAD等設計所需之電路圖案及配線圖案(步驟S201)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)之供應用捲筒(步驟S202)。又,於此步驟8202中準備之捲筒狀基板P,可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者 The component manufacturing method shown in FIG. 23 is first performed, for example, using an organic EL. The function and performance design of the display panel formed by the self-luminous element are designed, and the required circuit pattern and wiring pattern are designed by CAD or the like (step S201). A supply roll for winding a flexible substrate P (a resin film, a metal foil film, a plastic, or the like) as a base material of the display panel is prepared (step S202). Further, the rolled substrate P prepared in the step 8202 may be a surface whose surface is modified as necessary, or a bottom layer (for example, a fine unevenness by an imprint method) formed in advance, or a layer of light accumulated in advance. Inductive functional film or transparent film (insulating material)

接著,於基板P上形成構成顯示面板元件以電極或配線、絶緣膜、TFT(薄膜半導體)等構成之底板層,並以積層於該底板之方式形成以有機EL等自發光元件構成之發光層(顯示像素部)(步驟S203)。於此步驟S203中,亦包含使用於先前各實施形態說明之曝光裝置EX,對光阻劑層進行曝光使之顯影的習知微影製程、對取代光阻劑而塗有感光性矽烷耦合劑之基板P進行圖案曝光以將表面改質為親撥水性以形成圖案的曝光製程、對光感應性之觸媒層進行圖案曝光以賦予選擇性之鍍敷還元性並以無電解鍍敷法形成金屬膜圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷製程等之處理。 Then, a substrate layer constituting the display panel element such as an electrode or a wiring, an insulating film, a TFT (Thin Film Semiconductor), or the like is formed on the substrate P, and a light-emitting layer made of a self-luminous element such as an organic EL is formed on the substrate. (Display pixel portion) (step S203). In the step S203, the exposure apparatus EX described in the previous embodiments is also included, and the photoresist layer is exposed to develop a conventional lithography process, and the photoresist is coated with a photosensitive decane coupling agent. The substrate P is subjected to pattern exposure to modify the surface to a water-repellent water-based exposure process, and the photo-sensitive catalyst layer is subjected to pattern exposure to impart selective plating reproducibility and formed by electroless plating. A wet process of a metal film pattern (wiring, electrodes, etc.) or a printing process such as drawing a pattern of conductive ink containing silver nanoparticles or the like.

接著,針對以捲筒方式於長條基板P上連續製造之每一顯示面板元件切割基板P、或於各顯示面板元件表面貼合保護膜(耐環境障壁層)或彩色濾光片膜等,組裝元件(步驟S204)。接著,進行顯示面板元件是否可正常作動、或是否滿足所欲性能及特性之檢查步驟(步驟S205)。經由以上方式,即能製造顯示面板(可撓性顯示器)。又,作成可撓性長條片狀基板之電子元件不限於顯示面板,亦可以是做為用以連接搭載於汽車或電車等之各種電子零件間之導線(配線帶)之可撓性配線網。 Next, the substrate P is cut for each display panel element continuously manufactured on the long substrate P by a roll, or a protective film (environmentally resistant barrier layer) or a color filter film is bonded to the surface of each display panel element, The components are assembled (step S204). Next, an inspection step of whether the display panel element can be normally operated or whether the desired performance and characteristics are satisfied is performed (step S205). Through the above manner, a display panel (flexible display) can be manufactured. Further, the electronic component for forming the flexible long strip-shaped substrate is not limited to the display panel, and may be a flexible wiring net for connecting a lead wire (wiring tape) mounted between various electronic components such as an automobile or a train. .

31‧‧‧校準檢測系 31‧‧‧ Calibration Test System

31Cs‧‧‧光電感測器 31Cs‧‧‧Light Inductance Detector

41‧‧‧第1光學系 41‧‧‧1st Optical Department

42‧‧‧第2光學系 42‧‧‧2nd Optical Department

43‧‧‧第3光學系 43‧‧‧3rd Optical Department

44‧‧‧光束位移機構 44‧‧‧ Beam Displacement Mechanism

45‧‧‧光束位移機構 45‧‧‧ Beam Displacement Mechanism

51‧‧‧1/2波長板 51‧‧‧1/2 wavelength plate

52‧‧‧偏光鏡(偏光分束器) 52‧‧‧Polarizing mirror (polarizing beam splitter)

53‧‧‧散光器 53‧‧‧ astigmatizer

54‧‧‧第1反射鏡 54‧‧‧1st mirror

55‧‧‧第1中繼透鏡 55‧‧‧1st relay lens

56‧‧‧第2中繼透鏡 56‧‧‧2nd relay lens

57‧‧‧第2反射鏡 57‧‧‧2nd mirror

58‧‧‧第3反射鏡 58‧‧‧3rd mirror

59‧‧‧第4反射鏡 59‧‧‧4th mirror

60‧‧‧第1分束器 60‧‧‧1st beam splitter

61‧‧‧第5反射鏡 61‧‧‧5th mirror

62‧‧‧第2分束器 62‧‧‧2nd beam splitter

63‧‧‧第3分束器 63‧‧‧3rd beam splitter

64‧‧‧第6反射鏡 64‧‧‧6th mirror

71‧‧‧第7反射鏡 71‧‧‧7th mirror

72‧‧‧第8反射鏡 72‧‧‧8th mirror

73‧‧‧第4分束器 73‧‧‧4th beam splitter

74‧‧‧第9反射鏡 74‧‧‧9th mirror

81‧‧‧光偏向器 81‧‧‧Light deflector

82‧‧‧1/4波長板 82‧‧‧1/4 wavelength plate

84‧‧‧彎折鏡 84‧‧‧Bend mirror

85‧‧‧f-θ透鏡系 85‧‧‧f-θ lens system

86‧‧‧柱面透鏡 86‧‧‧ cylindrical lens

86B‧‧‧Y倍率修正用光學構件(透鏡群) 86B‧‧‧Y-rate correction optical member (lens group)

91‧‧‧中繼透鏡 91‧‧‧Relay lens

92‧‧‧遮光板 92‧‧ ‧ visor

93‧‧‧中繼透鏡 93‧‧‧Relay lens

94‧‧‧中繼透鏡 94‧‧‧Relay lens

95‧‧‧柱面透鏡 95‧‧‧ cylindrical lens

97‧‧‧旋轉多面鏡 97‧‧‧Rotating polygon mirror

97a‧‧‧旋轉軸 97a‧‧‧Rotary axis

97b‧‧‧反射面 97b‧‧‧reflecting surface

AX2‧‧‧旋轉中心線 AX2‧‧‧Rotating Center Line

CNT‧‧‧光源裝置 CNT‧‧‧ light source device

DR‧‧‧旋轉圓筒 DR‧‧‧ rotating cylinder

EN1、EN2、EN3、EN4‧‧‧編碼器讀頭 EN1, EN2, EN3, EN4‧‧‧ encoder read head

GPa、GPb‧‧‧標尺部 GPa, GPb‧‧‧ ruler department

I‧‧‧旋轉軸 I‧‧‧Rotary axis

LB‧‧‧光束 LB‧‧‧beam

Le1~Le4‧‧‧設置方位線 Le1~Le4‧‧‧Set the bearing line

P‧‧‧基板 P‧‧‧Substrate

PBS‧‧‧偏向分束器 PBS‧‧‧ bias beam splitter

Sf2‧‧‧軸部 Sf2‧‧‧Axis

SL‧‧‧分歧光學系 SL‧‧‧Differential Optical System

UW1~UW5‧‧‧描繪單元 UW1~UW5‧‧‧Drawing unit

Claims (26)

一種基板處理裝置,具備:支承構件,具有支承長條片狀基板之支承面,在與該基板之長條方向交叉之寬度方向之該支承面上之複數位置設有基準標記;搬送裝置,使被該支承構件支承之該基板往該長條方向移動;描繪裝置,包含可對以該支承面支承之該基板或該支承面一邊投射光束之點光、一邊於較該基板寬度方向之尺寸窄之範圍掃描並沿著以該掃描所得之描繪線描繪既定圖案之複數個描繪單元,以該複數個描繪單元之各描繪線描繪於該基板上之圖案彼此隨著該基板往長條方向之移動而於該基板之寬度方向接合之方式,將該複數個描繪單元配置於該基板之寬度方向;反射光檢測部,設於該複數個描繪單元之各個,用以檢測因該光束之點光之投射而從該支承構件之支承面或該基板反射之反射光;以及測量裝置,係根據在該支承構件之該基準標記位於該複數個描繪單元各個之該描繪線上時從該反射光檢測部輸出之訊號,測量該複數條描繪線之配置關係。 A substrate processing apparatus comprising: a support member having a support surface for supporting a long sheet-like substrate; wherein a reference mark is provided at a plurality of positions on the support surface in a width direction intersecting the longitudinal direction of the substrate; and a conveying device is provided The substrate supported by the support member moves in the longitudinal direction; and the drawing device includes a spot light that can project a light beam to the substrate or the support surface supported by the support surface, and is narrower in a width direction than the substrate width direction. a plurality of drawing units that scan and draw a predetermined pattern along the drawing line obtained by the scanning, and the patterns drawn on the substrate by the respective drawing lines of the plurality of drawing units move in the strip direction with the substrate And a plurality of drawing units are disposed in a width direction of the substrate in a manner of joining the substrates in a width direction; and the reflected light detecting unit is disposed in each of the plurality of drawing units for detecting a spot light of the light beam Projecting a reflected light reflected from a support surface of the support member or the substrate; and measuring means based on the reference mark at the support member Drawing the plurality of individual units when the line drawing portion from the reflected light detection output of the signal, measuring the plurality of strip line arrangement relationship is depicted. 如申請專利範圍第1項之基板處理裝置,其中,該支承構件係以從延伸於該基板寬度方向之中心線以一定半徑彎曲之圓筒狀外周面之一部分支承該基板,並藉由繞該中心線之旋轉將該基板往該長條方向搬送的旋轉圓筒。 The substrate processing apparatus according to claim 1, wherein the support member partially supports the substrate by one of cylindrical outer peripheral surfaces curved at a certain radius from a center line extending in a width direction of the substrate, and by winding the substrate The rotation of the center line rotates the substrate in the direction of the strip. 如申請專利範圍第2項之基板處理裝置,其中,該複數個描繪單元係配置成在將描繪於該基板上彼此接合之圖案的相鄰描繪單元之一方設為奇數號、另一方設為偶數號時,該奇數號描繪單元各個之奇數號描繪線、 與該偶數號描繪單元各個之偶數號描繪線,以一定之角度間隔位於該旋轉圓筒外周面之周方向。 The substrate processing apparatus according to claim 2, wherein the plurality of drawing units are arranged such that one of adjacent drawing units that pattern the patterns bonded to each other on the substrate is an odd number and the other is an even number When the number is drawn, the odd number is drawn by each of the odd numbered lines of the unit, The even-numbered drawing lines of the even-numbered drawing units are located at a predetermined angular interval in the circumferential direction of the outer peripheral surface of the rotating cylinder. 如申請專利範圍第3項之基板處理裝置,其中,該奇數號描繪線之各個係在該基板上與該旋轉圓筒之旋轉中心線大致平行之方式,於該基板之寬度方向配置成一行,該偶數號描繪線之各個係在該基板上與該旋轉圓筒之旋轉中心線大致平行之方式,於該基板之寬度方向配置成一行。 The substrate processing apparatus of claim 3, wherein each of the odd-numbered drawing lines is arranged in a row on the substrate so as to be substantially parallel to a rotation center line of the rotating cylinder. Each of the even-numbered drawing lines is arranged in a row in the width direction of the substrate so as to be substantially parallel to the rotation center line of the rotating cylinder on the substrate. 如申請專利範圍第2至4項中任一項之基板處理裝置,其進一步具備:標尺部,具有從該中心線於既定半徑之周方向形成之刻度,被設置成與該旋轉圓筒一起旋轉;以及編碼器讀頭,讀取該標尺部之刻度,輸出與該基板之移動量或移動位置對應之位置資訊;該搬送裝置,係與該基板往長條方向之搬送連動的根據從該編碼器讀頭輸出之該位置資訊使該旋轉圓筒旋轉。 The substrate processing apparatus according to any one of claims 2 to 4, further comprising: a scale portion having a scale formed in a circumferential direction of the predetermined radius from the center line, and configured to rotate together with the rotating cylinder And an encoder read head that reads the scale of the scale portion and outputs position information corresponding to the movement amount or the movement position of the substrate; the conveying device is based on the encoding of the substrate in the longitudinal direction The position information output by the head reads the rotating cylinder. 如申請專利範圍第5項之基板處理裝置,其中,該測量裝置,具備在該光束之點光掃描該支承構件之基準標記時,根據從該複數個描繪單元各個之反射光檢測部輸出之訊號與從該編碼器讀頭輸出之位置資訊,運算關於該複數條描繪線之相對位置關係之資訊加以儲存的控制部。 The substrate processing apparatus according to claim 5, wherein the measuring device includes a signal output from each of the plurality of drawing units by the reflected light detecting unit when the reference mark of the support member is scanned by the spot of the light beam And a control unit that stores information on the relative positional relationship of the plurality of drawing lines with position information output from the encoder read head. 如申請專利範圍第6項之基板處理裝置,其中,該控制部,係根據在該複數個基準標記往該旋轉圓筒之周方向移動之期間,因該光束之點光沿該描繪線之複數次掃描之各次而從該反射光檢測部輸出之複數個訊號,運算與該複數條描繪線之相對位置關係偏差相關之資訊。 The substrate processing apparatus according to claim 6, wherein the control unit is configured to move the light of the light beam along the drawing line during a period in which the plurality of reference marks move in a circumferential direction of the rotating cylinder The plurality of signals output from the reflected light detecting unit each time the sub-scan is performed, and information related to the deviation of the relative positional relationship between the plurality of drawing lines is calculated. 如申請專利範圍第2至4項中任一項之基板處理裝置,該基板對該光束具有穿透性,該反射光檢測部係輸出與該光束之點光直接照射於該支承構件之支承面上之該基準標記時所產生之反射光對應之訊號、或與該光束穿透該基板照射於該基準標記時所產生之反射光對應之訊號。 The substrate processing apparatus according to any one of claims 2 to 4, wherein the substrate has a penetrating property to the light beam, and the reflected light detecting portion outputs a spot light directly incident on the support surface of the supporting member a signal corresponding to the reflected light generated by the reference mark or a signal corresponding to the reflected light generated when the light beam penetrates the substrate and irradiated to the reference mark. 如申請專利範圍第1至6項中任一項之基板處理裝置,其進一步具備輸出該光束之雷射光源;該複數個描繪單元之各個,具備將來自該雷射光源之光束偏向掃描於一維的掃描光學系、與將該經偏向掃描之光束以在該基板上或該支承構件之支承面上聚光於該點光之方式加以投射的光束投射光學系;該反射光檢測部,包含用以對來自於該基板或該支承構件之支承面之反射光透過該光束投射光學系與該掃描光學系進行光電檢測的光電感測器、與配置在該光電感測器與該掃描光學系間之光路中的光分割器。 The substrate processing apparatus according to any one of claims 1 to 6, further comprising: a laser light source for outputting the light beam; each of the plurality of drawing units having a light beam deflected from the laser light source to be scanned a scanning optical system for projecting, and a beam projection optical system for projecting the deflected light beam on the substrate or the supporting surface of the supporting member to condense the spot light; the reflected light detecting portion includes a photodetector for transmitting reflected light from the support surface of the substrate or the support member through the beam projection optical system and the scanning optical system, and the photodetector and the scanning optical system The light splitter in the light path between the two. 如申請專利範圍第9項之基板處理裝置,其中,該掃描光學系包含將來自該雷射光源之光束偏向掃描於一方向之旋轉多面鏡;該光束投射光學系,具備將以該旋轉多面鏡偏向掃描之該光束導向該描繪線上的f-θ透鏡、與設在該f-θ透鏡與該支承構件之間具有與該描繪線延伸之方向大致平行之母線並在與該母線正交之方向聚光該光束的柱面透鏡。 The substrate processing apparatus of claim 9, wherein the scanning optical system comprises a rotating polygon mirror that deflects a light beam from the laser light source in a direction; the beam projection optical system is provided with the rotating polygon mirror The deflected scan beam is directed to the f-θ lens on the drawing line, and a bus bar disposed between the f-θ lens and the support member having a direction substantially parallel to a direction in which the drawing line extends is orthogonal to the bus bar A cylindrical lens that condenses the beam. 如申請專利範圍第2至4項中任一項之基板處理裝置,其中,該複數個描繪單元之各個,具備將來自雷射光源之光束偏向掃描於一維的掃描光學系、以該經偏向掃描之光束作為該光束投射向該基板或該旋轉圓筒之外周面的光束投射光學系、以及設在該光束投射光學系與該旋轉圓筒間具 有與該描繪線延伸之方向大致平行之母線並將該光束聚光於與該母線正交之方向的柱面透鏡。 The substrate processing apparatus according to any one of claims 2 to 4, wherein each of the plurality of drawing units is provided with a scanning optical system that deflects a light beam from a laser light source into one dimension, and the biasing a scanning beam as a beam projection optical system that projects the beam onto the outer surface of the substrate or the rotating cylinder, and is disposed between the beam projection optical system and the rotating cylinder There is a bus bar that is substantially parallel to the direction in which the drawing line extends and converges the beam in a direction perpendicular to the bus bar. 如申請專利範圍第2至11項中任一項之基板處理裝置,其中,該基準標記係在該旋轉圓筒之外周面上之該中心線延伸之方向以既定間隔設有複數個,該既定間隔被設定為較該複數條描繪線之長度小。 The substrate processing apparatus according to any one of claims 2 to 11, wherein the reference mark is provided at a predetermined interval in a direction in which the center line extends on the outer circumferential surface of the rotating cylinder, the predetermined The interval is set to be smaller than the length of the plurality of lines drawn. 如申請專利範圍第12項之基板處理裝置,其中,該基準標記係以形成在該旋轉圓筒外周面上之彼此交叉之2條線圖案之交點部構成。 The substrate processing apparatus according to claim 12, wherein the reference mark is formed at an intersection of two line patterns which are formed on the outer peripheral surface of the rotating cylinder. 如申請專利範圍第2至13項中任一項之基板處理裝置,其中,從該複數個描繪單元之各個投射於該基板或該旋轉圓筒外周面之該光束,係配置成朝向該旋轉圓筒之旋轉中心線。 The substrate processing apparatus according to any one of claims 2 to 13, wherein the light beam projected from the plurality of drawing units on the substrate or the outer circumferential surface of the rotating cylinder is disposed to face the rotating circle The center line of rotation of the barrel. 如申請專利範圍第1至8項中任一項之基板處理裝置,其中,該反射光檢測部具備將在該基板或該支承構件之支承面產生之該反射光以亮視野或暗視野加以受光的光電感測器,根據從該光電感測器輸出之訊號檢測該基準標記之邊緣位置。 The substrate processing apparatus according to any one of claims 1 to 8, wherein the reflected light detecting unit is configured to receive the reflected light generated on a support surface of the substrate or the support member in a bright field or a dark field. The photo-inductor detects the edge position of the fiducial mark based on the signal output from the photo-sensing device. 如申請專利範圍第7或10項之基板處理裝置,其中,在將該描繪線之長度設為LBL、將該光束於該長度LBL之掃描時間設為Ts、將形成在該描繪線上之該點光於該掃描方向之點尺寸設為Xs時,該雷射光源係其重複發光發光頻率Fz為滿足Fz≧LBL/(Ts‧Xs)之脈衝雷射光源。 The substrate processing apparatus according to claim 7 or 10, wherein the length of the drawing line is LBL, and the scanning time of the light beam at the length LBL is Ts, and the point formed on the drawing line is obtained. When the spot size in the scanning direction is set to Xs, the laser light source has a repeated illuminating light frequency Fz of a pulsed laser light source satisfying Fz ≧ LBL / (Ts ‧ Xs). 一種元件製造方法,係使用如申請專利範圍第1至16項中任一項之基板處理裝置於該基板形成該圖案。 A device manufacturing method for forming the pattern on the substrate using the substrate processing apparatus according to any one of claims 1 to 16. 一種基板處理裝置之調整方法,此基板處理裝置具備:支承構件,其於支承面上預先決定之複數個位置具備離散或連續之特 定的基準標記;搬送裝置,一邊於該支承構件之支承面支承既定寬之基板、一邊將該基板往與該寬度方向交叉之長條方向以既定速度加以搬送;描繪裝置,具備可沿著將投射於該基板之光束之點光在較該基板寬度寬度窄之範圍於該寬度方向掃描所得之描繪線、將既定圖案描繪於該基板上的複數個描繪單元,以藉由該複數個描繪單元之各個描繪於該基板上之圖案彼此隨著該基板往該長條方向之搬送而在該基板之寬度方向接合之方式,將彼此於該寬度方向相鄰之該描繪線於該長條方向以既定間隔分離配置;以及複數個反射光檢測部,用以檢測因來自該複數個描繪單元之各個之該光束之照射而從該支承構件之支承面產生之反射光;其特徵在於,包含:使該支承構件與該描繪裝置相對移動,以使該基準標記來到以該複數個描繪單元之各個形成之該描繪線上,並以該光束之點光掃描該基準標記的掃描步驟;以該反射光檢測部檢測因該光束之掃描而從該基準標記產生之反射光,以獲得與該基準標記對應之檢測訊號的檢測步驟;以及根據該檢測訊號求出對應該複數條描繪線之配置狀態或彼此之配置誤差之調整資訊的步驟;根據該調整資訊,調整以該複數個描繪單元之各個描繪之該圖案之描繪狀態。 A method of adjusting a substrate processing apparatus, the substrate processing apparatus comprising: a support member having a plurality of discrete or continuous features at a plurality of predetermined positions on the support surface a predetermined reference mark; the conveying device supports a predetermined width of the substrate while supporting the substrate on the support surface of the support member at a predetermined speed in a longitudinal direction intersecting the width direction; a plurality of drawing units for drawing a line drawn by the light beam of the substrate in a width narrower than the width of the substrate, and drawing a predetermined line on the substrate by the plurality of drawing units The patterns drawn on the substrate are joined to each other in the longitudinal direction as the substrate is transferred in the longitudinal direction, and the drawing lines adjacent to each other in the width direction are in the strip direction. a predetermined interval separation arrangement; and a plurality of reflected light detecting portions for detecting reflected light generated from a support surface of the support member by illumination of the light beam from each of the plurality of drawing units; The support member moves relative to the drawing device such that the fiducial mark comes to the drawing line formed by each of the plurality of drawing units And scanning step of scanning the reference mark with the spot light of the light beam; detecting, by the reflected light detecting unit, the reflected light generated from the reference mark by the scanning of the light beam to obtain a detection signal corresponding to the reference mark And obtaining, according to the detection signal, a step of determining adjustment information corresponding to an arrangement state of the plurality of drawing lines or a configuration error of each other; and adjusting a drawing state of the pattern drawn by each of the plurality of drawing units according to the adjustment information. 如申請專利範圍第18項之基板處理裝置之調整方法,其中,該基 板處理裝置進一步具備輸出與該支承構件之支承面之移動量對應之位置變位資訊的移動測量機構;求出該調整資訊之步驟,包含根據以該檢測步驟檢測之該檢測訊號、與從該移動測量機構輸出之該位置變位資訊,運算以該複數個描繪單元之各個形成之該描繪線彼此之位置關係或位置誤差,以作為該調整資訊的運算步驟。 The method for adjusting a substrate processing apparatus according to claim 18, wherein the base The plate processing apparatus further includes a movement measuring mechanism that outputs positional displacement information corresponding to the amount of movement of the support surface of the support member; and the step of obtaining the adjustment information includes the detection signal detected by the detection step, and the The position displacement information output by the movement measuring mechanism calculates a positional relationship or a position error between the drawing lines formed by each of the plurality of drawing units as a calculation step of the adjustment information. 如申請專利範圍第19項之基板處理裝置之調整方法,其中,該基板處理裝置之該支承構件,係以從延伸於該基板寬度方向之中心線以一定半徑彎曲之圓筒狀外周面之一部分支承該基板,並藉由繞該中心線之旋轉將該基板往該長條方向搬送的旋轉圓筒。 The method of adjusting a substrate processing apparatus according to claim 19, wherein the support member of the substrate processing apparatus is a portion of a cylindrical outer peripheral surface that is curved at a radius from a center line extending in a width direction of the substrate. A rotating cylinder that supports the substrate and transports the substrate in the longitudinal direction by rotation about the center line. 如申請專利範圍第20項之基板處理裝置之調整方法,其中,該基準標記係於該旋轉圓筒外周面上之該中心線延伸之方向以既定間隔設置複數個,該既定間隔被設定為較該複數條描繪線之長度小。 The method of adjusting a substrate processing apparatus according to claim 20, wherein the reference mark is set at a predetermined interval in a direction in which the center line extends on an outer circumferential surface of the rotating cylinder, and the predetermined interval is set to be relatively The plurality of lines depicting the length of the line is small. 如申請專利範圍第21項之基板處理裝置之調整方法,該基準標記係以形成在該旋轉圓筒外周面上彼此交叉之2條線圖案之交點部構成。 The method of adjusting the substrate processing apparatus according to claim 21, wherein the reference mark is formed at an intersection of two line patterns which are formed on the outer peripheral surface of the rotating cylinder. 一種基板處理裝置,係一邊將經強度調變之光束之點光於基板上沿既定描繪線進行主掃描、一邊在與該描繪線交叉之方向進行該光束與該基板之副掃描,據以在該基板上描繪既定圖案,其具備:支承構件,具有支承該基板之支承面;搬送裝置,使被該支承構件支承之該基板往該副掃描之方向移動;脈衝雷射光源,作為該光束、以重複發光頻率Fz輸出紫外波長帶之脈衝光束;以及 描繪單元,具備依據將來自該脈衝雷射光源之脈衝光束待描繪於該描繪線上之圖案進行強度調變的調變器、將以該調變器調變之光束偏向掃描於一維的掃描光學系、以及將該經偏向掃描之光束投射向該基板的光束投射光學系;在將該描繪線之長度設為LBL、該光束之點光掃描過該長度LBL之掃描時間設為Ts、該點光沿該描繪線之方向之尺寸設為Xs時,將該脈衝雷射光源之發光頻率Fz設定為滿足Fz≧LBL/(Ts‧Xs)之關係。 A substrate processing apparatus for performing a main scanning on a substrate along a predetermined drawing line while performing a main scanning on a substrate along a predetermined drawing line, and performing a sub-scanning of the light beam and the substrate in a direction intersecting the drawing line, thereby a predetermined pattern is formed on the substrate, and includes: a support member having a support surface for supporting the substrate; and a transfer device that moves the substrate supported by the support member in a direction of the sub-scan; and a pulsed laser light source as the light beam Outputting a pulsed beam of ultraviolet wavelength band at a repeated illumination frequency Fz; The drawing unit is provided with a modulator that adjusts the intensity according to a pattern of the pulsed light beam from the pulsed laser light source to be drawn on the drawing line, and deflects the light beam modulated by the modulator to scan the one-dimensional scanning optics And a beam projection optical system that projects the deflected light beam onto the substrate; the scan time of the length of the drawing line is LBL, and the spot light of the light beam is scanned by the length LBL is Ts, the point When the size of the light along the direction of the drawing line is Xs, the light-emitting frequency Fz of the pulsed laser light source is set to satisfy the relationship of Fz ≧ LBL / (Ts ‧ Xs). 如申請專利範圍第23項之基板處理裝置,其中,該脈衝雷射光源包含以光纖構成之増幅器與波長轉換元件。 The substrate processing apparatus of claim 23, wherein the pulsed laser light source comprises a stencil and a wavelength conversion element formed of an optical fiber. 如申請專利範圍第24項之基板處理裝置,其中,該調變器包含將該脈衝光束切換為射入該掃描光學系之狀態與非射入狀態的光切換元件,並將該光切換元件之上限調變頻率與該脈衝雷射光源之發光頻率Fz設定成整數倍關係。 The substrate processing apparatus of claim 24, wherein the modulator comprises: switching the pulsed beam to a light switching element that enters the scanning optical system and a non-injecting state, and the optical switching element The upper limit modulation frequency is set to an integral multiple relationship with the illumination frequency Fz of the pulsed laser source. 如申請專利範圍第23至25項中任一項之基板處理裝置,其中,該基板處理裝置具備對該脈衝雷射光源賦予頻率Fz之時脈訊號使其以該發光頻率Fz輸出該脈衝光束之時脈產生電路,該時脈產生電路係在掃描該長度LBL之該掃描時間Ts之間之1處、或離散之複數處的各處,使該時脈訊號中連續之2個時脈脈衝之時間間隔,相對以該頻率Fz之時脈脈衝之時間間隔進行増減。 The substrate processing apparatus according to any one of claims 23 to 25, wherein the substrate processing apparatus includes a clock signal for giving a frequency Fz to the pulsed laser light source to output the pulsed light beam at the light emission frequency Fz. a clock generation circuit, wherein the clock generation circuit is at a position between the scanning time Ts of the scanning length LBL or a plurality of discrete multiples, so that two consecutive clock pulses in the clock signal are The time interval is reduced relative to the time interval of the clock pulse at the frequency Fz.
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