JP2020173444A - Pattern formation method - Google Patents

Abstract

SOLUTION: A pattern formation method for forming a pattern for electronic devices on a sheet substrate by moving a long-sized sheet substrate having flexibility in a longer direction memorizes, when an energy beam based on design information for forming a pattern for electronic devices is projected on partial regions set on the sheet substrate to divide a pattern for electronic devices to be formed on the sheet substrate into a plurality of blocks in the longer direction, a plurality of correction data for deforming a pattern to be formed in a block according to a plurality of deformation forms of a presumed partial region, and, selects, when information of an arrangement state of a plurality of marks formed on the sheet substrate is detected to project the energy beam on the sheet substrate, correction data corresponding to information of the arrangement state among the plurality of correction data memorized in the memory part, for every block, to perform correction such that a pattern to be formed in the block is deformed using the selected correction data.SELECTED DRAWING: Figure 8

Description

The present invention relates to a pattern forming method in which a predetermined process for forming an electronic device is applied to a flexible sheet substrate.

As disclosed in Patent Document 1 below, an exposure apparatus is known in which a sheet-shaped photosensitive material (paper) is fixed to the surface of a rotating drum, and an image is written on the photosensitive material with a laser beam while rotating the drum. ing. In the exposure apparatus of Patent Document 1, an encoder for detecting the rotation position of the drum is mounted coaxially with the shaft portion of the drum, and is based on the reference phase, A phase, and B phase pulse signals output from the encoder. When controlling the writing of an image by the laser beam from the optical unit, the A-phase or B-phase is based on the detection signal from the sensor that detects the tip position of the photosensitive material (paper) wound around the surface of the drum. It is disclosed that the pulse signal is counted and the reference phase from the encoder is set at the tip position of the photosensitive material. With such a configuration, in the exposure apparatus of Patent Document 1, the error of the feed amount from the reference phase of the encoder to the image writing position is suppressed to a small extent, and the deviation of the image writing position is suppressed to improve the image quality. ..

The reference phase from the encoder represents the origin of one rotation of the encoder, and when the photosensitive material (paper) wound around the drum is a single sheet as in Patent Document 1, the photosensitive material (paper) is used as the drum. Each time it is fixed, the tip position of the photosensitive material and the reference phase from the encoder can be set close to each other. However, the photosensitive material is a long sheet substrate longer than the entire circumference of the outer peripheral surface of the drum, and the image (pattern) of the specified size is continuously conveyed in the elongated direction by the rotation of the drum. When the reference phase from the encoder and the writing (drawing) start position of the image are set close to each other when the sheets are exposed one after another along the long direction of the sheet substrate, each tip of the image exposed on the sheet substrate is exposed. The position in the long direction is limited to a substantially constant interval. Therefore, when the specified size in the long direction is small, the margins between the images arranged in the long direction are too long. On the contrary, when the specified size is large in the long direction, there is a situation where there is no margin between the images arranged in the long direction, and the image (pattern) itself is exposed on the sheet substrate in a good arrangement state. Becomes impossible. Therefore, when the drawing control based on the reference phase of the encoder is used to continuously convey the long sheet substrate and expose the images one after another, the size of the image in the long direction is limited.

JP-A-11-202716

One aspect of the present invention is a pattern forming method for forming a pattern for an electronic device on the sheet substrate by moving a long flexible sheet substrate in the elongated direction, and the pattern for the electronic device. An energy beam based on design information for forming the sheet substrate is projected onto a partial region set on the sheet substrate, and a plurality of patterns for electronic devices to be formed on the sheet substrate are formed in the elongated direction. When divided into the blocks, a plurality of correction data for deforming a pattern to be formed in the block is stored in the storage unit according to a plurality of deformation forms of the partial region assumed in advance. When detecting information regarding the arrangement state of a plurality of marks formed on the sheet substrate and projecting the energy beam onto the sheet substrate, the plurality of corrections stored in the storage unit for each block. This includes selecting the correction data according to the information regarding the arrangement state from the data, and using the selected correction data to correct the pattern to be formed in the block so as to be deformed.

It is a schematic block diagram of the device manufacturing system including the exposure apparatus which performs the exposure process on the substrate of 1st Embodiment. It is a perspective view which shows the rotating drum shown in FIG. 1 in a state where a substrate is wound. It is a figure which shows the drawing line of spot light and the mark for alignment formed on the substrate. It is a partially enlarged view of the exposure apparatus shown in FIG. It is a figure which shows the relationship between the pattern exposed to the exposure area on the substrate FS, and design information. It is a figure for demonstrating the structure of the scanning unit shown in FIG. It is a block diagram which shows the structure of the encoder counter and the drawing counter. It is a functional block diagram which shows the electrical schematic structure of the exposure apparatus shown in FIG. It is a time chart which shows the relationship between the substrate supported and carried by a rotating rotating drum, the count value of an encoder counter, the count value of a drawing counter, and a preset signal. FIG. 10A is a diagram showing an example of a deformed first used block shape type, FIG. 10B is a diagram showing an example of a deformed and repeatedly used block shape type, and FIG. 10C is a deformation. It is a figure which shows an example of the kind of block shape used at the end. 6 is a time chart showing the relationship between the substrate, the count value of the encoder counter, the count value of the drawing counter, and the preset signal when the length of the exposure region in the long direction is shorter than the outer circumference of the rotating drum. It is a circuit block diagram which shows the structure which incorporated the correction function by the correction map into the structure of each counter for the encoder shown in FIG. 7.

A device forming method and a pattern forming method according to an aspect of the present invention, and a device forming device and a pattern forming device for carrying out these methods will be described in detail below with reference to the accompanying drawings, with reference to suitable embodiments. To do. It should be noted that the aspects of the present invention are not limited to these embodiments, but include those with various changes or improvements. That is, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same, and the components described below can be appropriately combined. In addition, various omissions, substitutions or changes of components can be made without departing from the gist of the present invention.

[First Embodiment]
FIG. 1 is a schematic configuration diagram according to a first embodiment of a device manufacturing system 10 including an exposure apparatus EX that performs exposure processing on a substrate (object to be irradiated) FS. In the following description, unless otherwise specified, an XYZ Cartesian coordinate system with the gravity direction as the Z direction is set, and the X direction, the Y direction, and the Z direction are described according to the arrows shown in the figure. The −Z direction is the direction in which gravity works.

The device manufacturing system 10 is a system (board processing device) that manufactures an electronic device by subjecting a substrate FS to a predetermined process (exposure process or the like). The device manufacturing system 10 is a manufacturing system in which a manufacturing line for manufacturing electronic devices is constructed. Examples of electronic devices include flexible displays, film-like touch panels, film-like color filters for liquid crystal display panels, flexible wiring, flexible sensors, and the like. In the present embodiment, a flexible display will be described as an electronic device. Flexible displays include, for example, organic EL displays, liquid crystal displays, and the like. In the device manufacturing system 10, the substrate FS is delivered from a supply roll (not shown) in which a flexible sheet-like substrate (sheet substrate) FS is wound in a roll shape, and various processes are continuously performed on the delivered substrate FS. It has a so-called roll-to-roll (Roll To Roll) structure in which the substrate FS after various treatments is wound up with a recovery roll (not shown). The substrate FS has a strip-shaped shape in which the moving direction of the substrate FS is the longitudinal direction (long) and the width direction is the lateral direction (short). The substrate FS sent from the supply roll is sequentially subjected to various treatments by the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, and the like, and is wound up by the recovery roll.

The X direction is a direction (conveyance direction) from the process apparatus PR1 to the process apparatus PR2 via the exposure apparatus EX in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is a width direction (short direction) of the substrate FS. The Z direction is a direction (upward) orthogonal to the X direction and the Y direction, and is parallel to the direction in which gravity acts.

As the substrate FS, for example, a resin film, a foil made of a metal or alloy such as stainless steel, or the like is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Of these, those containing at least one or more may be used. Further, the thickness and rigidity (Young's modulus) of the substrate FS are within a range in which the substrate FS does not have creases or irreversible wrinkles due to buckling when passing through the transport path in the device manufacturing system 10. Good. Films such as PET (polyethylene terephthalate) and PEN (polyethylene naphthalate) having a thickness of about 25 μm to 200 μm as the base material of the substrate FS are typical of suitable sheet substrates.

Since the substrate FS may receive heat in each process performed by the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, etc., it is possible to select a substrate FS made of a material whose thermal expansion coefficient is not remarkably large. preferable. For example, the coefficient of thermal expansion can be suppressed by mixing the inorganic filler with the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like. Further, the substrate FS may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float method or the like, or a laminate obtained by laminating the above resin film, foil or the like on the ultrathin glass. It may be.

By the way, the flexibility of a substrate FS means a property that the substrate FS can be flexed without being sheared or broken even when a force of about its own weight is applied to the substrate FS. .. Flexibility also includes the property of bending by a force of about its own weight. Further, the degree of flexibility varies depending on the material, size, thickness of the substrate FS, the layer structure formed on the substrate FS, the environment such as temperature and humidity, and the like. In any case, when the substrate FS is correctly wound around the transfer direction changing members such as various transfer rollers and rotary drums provided in the transfer path in the device manufacturing system 10 according to the present embodiment, the substrate FS buckles and creases. It can be said that the range of flexibility is such that the substrate FS can be smoothly conveyed without being damaged or damaged (tear or cracked).

The process apparatus PR1 performs the pre-process on the substrate FS to be exposed by the exposure apparatus EX. The process apparatus PR1 performs the pre-process on the substrate FS while transporting the substrate FS sent from the supply roll toward the exposure apparatus EX at a predetermined speed. By the processing of this previous step, the substrate FS sent to the exposure apparatus EX becomes a substrate (photosensitive substrate) in which a photosensitive functional layer (photosensitive layer) is uniformly or selectively formed on the surface thereof.

This photosensitive functional layer is applied as a solution on the substrate FS and dried to form a layer (film). A typical photosensitive functional layer is a photoresist (liquid or dry film), but as a material that does not require development treatment, the photosensitive functional layer is modified in terms of the liquid-repellent property of the portion irradiated with ultraviolet rays. There are a silane coupling agent (SAM), a photosensitive reducing agent in which a plating reducing group is exposed on a portion irradiated with ultraviolet rays, and the like. When a photosensitive silane coupling agent is used as the photosensitive functional layer, the pattern portion exposed to ultraviolet rays on the substrate FS is modified from liquid-repellent to liquid-friendly. Therefore, by selectively coating a conductive ink (an ink containing conductive nanoparticles such as silver and copper) or a liquid containing a semiconductor material on the part that has become liquid-friendly, an electronic device for a display is used. A pattern layer (layer in which a pattern is formed) to be a circuit or wiring (for example, a source electrode, a drain electrode, and a gate electrode constituting a thin film transistor, a semiconductor, insulation, or a wiring for connection, etc.) is formed. can do. When a photosensitive reducing agent is used as the photosensitive functional layer, the plating reducing group is exposed on the pattern portion exposed to ultraviolet rays on the substrate FS. Therefore, after the exposure, the substrate FS is immediately immersed in a plating solution containing palladium ions or the like for a certain period of time to form (precipitate) a pattern layer made of palladium. Such a plating process is an additive process, but if an etching process is assumed as a subtractive process, the substrate FS sent to the exposure apparatus EX uses PET as the base material or A PEN may be used, and a metallic thin film such as aluminum (Al) or copper (Cu) may be vapor-deposited on the entire surface thereof or selectively, and a photoresist layer may be laminated on the PEN.

The exposure device (device forming device, pattern forming device) EX is a direct drawing type exposure device that does not use a mask, a so-called raster scan type exposure device (beam scanning device, pattern drawing device). A predetermined circuit or wiring representing an electronic device for a display with respect to an irradiated surface (the surface of a photosensitive functional layer, hereinafter may be referred to as a photosensitive surface) of the substrate FS supplied from the process apparatus PR1. Irradiate the light pattern according to the pattern of. As will be described in detail later, the exposure apparatus EX transmits the spot light SP of the beam LB for exposure in the + X direction (direction of sub-scanning) in the + X direction (direction of sub-scanning), and a predetermined spot light SP of the beam LB is transmitted on the irradiated surface of the substrate FS. While scanning (main scanning) one-dimensionally in the scanning direction (main scanning direction, Y direction), the intensity of the spot light SP is modulated (on / on /) at high speed according to the design information (pattern data, drawing data, pattern information) PDn. Off). As a result, an optical pattern corresponding to a predetermined pattern such as a circuit or wiring constituting an electronic device is drawn and exposed on the irradiated surface of the substrate FS. That is, in the sub-scanning of the substrate FS and the main scanning of the spot light SP, the spot light SP is relatively two-dimensionally scanned on the irradiated surface of the substrate FS, and a predetermined pattern is drawn and exposed on the substrate FS. .. In the present embodiment, drawing means modulating the intensity of the spot light SP while scanning the spot light SP. Since the substrate FS is transported along the transport direction (+ X direction), the exposed region (processed region) W on which the pattern is exposed by the exposure apparatus EX is along the long direction (convey direction) of the substrate FS. Therefore, a plurality of CLEs are provided with a predetermined gap (interval) CLE (see FIG. 3). Since the electronic device is formed in this exposure region W, the exposure region W is also a device formation region.

The process apparatus PR2 performs post-process processing (for example, coating of conductive ink, plating processing, development / etching processing, etc.) on the substrate FS exposed by the exposure apparatus EX. The process apparatus PR2 performs a post-process process on the substrate FS while transporting the substrate FS sent from the exposure apparatus EX toward the recovery roll at a predetermined speed. The pattern layer of the electronic device is formed on the substrate FS by the processing in the subsequent step.

As described above, one pattern layer is generated through each process of the device manufacturing system 10. Therefore, in order to generate an electronic device composed of a plurality of pattern layers, each process of the device manufacturing system 10 as shown in FIG. 1 must be performed at least twice. Therefore, the pattern layer can be laminated by mounting the recovery roll on which the substrate FS is wound as a supply roll on another device manufacturing system 10. The processed substrate FS is in a state in which a plurality of electronic devices are connected along a long direction of the substrate FS with a predetermined gap CLE. That is, the substrate FS is a substrate for multi-chamfering.

The recovery roll that recovers the substrate FS formed in a state in which electronic devices are connected along the long direction of the substrate FS may be mounted on a dicing apparatus (not shown). The dicing apparatus equipped with the recovery roll divides (dices) the processed substrate FS into each electronic device (exposure region W which is a device forming region). As a result, a plurality of single-wafered electronic devices are formed. The size of the substrate FS is, for example, about 10 cm to 2 m in the width direction (short direction) and 10 m or more in the length direction (long direction). The dimensions of the substrate FS are not limited to the above-mentioned dimensions.

Next, the exposure apparatus EX will be described in detail. The exposure apparatus EX has a temperature control chamber ECV. By keeping the inside of the temperature control chamber ECV at a predetermined temperature, the shape change of the substrate FS conveyed inside is suppressed due to the temperature. The temperature control chamber ECV is arranged on the installation surface E of the manufacturing plant via the passive or active vibration isolation units SU1 and SU2. The vibration isolation units SU1 and SU2 reduce vibration from the installation surface E. The installation surface E may be the floor surface of the factory itself, or may be a surface on an installation base (pedestal) installed on the floor surface in order to create a horizontal surface. The exposure device EX includes a substrate transfer mechanism 12, a light source device (pulse light source device) 14, an exposure head 16, a control device 18, and a plurality of alignment microscopes ALGm (m = 1, 2, 2, in the temperature control chamber ECV. 3, 4) and at least a plurality of encoder heads ENja and ENjb (j = 1, 2, 3) constituting the encoder system are provided. The control device 18 controls each part of the exposure apparatus EX. The control device 18 includes a computer and a recording medium or the like on which the program is recorded, and when the computer executes the program, the control device 18 functions as the control device 18 of the present embodiment.

The substrate transport mechanism (conveyor) 12 transports the substrate FS transported from the process device PR1 at a predetermined speed in the exposure device EX, and then delivers the substrate FS to the process device PR2 at a predetermined speed. The substrate transfer mechanism 12 defines a transfer path for the substrate FS to be conveyed in the exposure apparatus EX. The substrate transfer mechanism 12 includes an edge position controller EPC, a drive roller (nip roller) R1, a tension adjustment roller RT1, a rotary drum (cylindrical drum stage) DR, and tension in this order from the upstream side (-X direction side) of the substrate FS in the transfer direction. It has an adjusting roller RT2 and driving rollers (nip rollers) R2 and R3. The substrate FS transported from the process device PR1 is hung on the rollers, the drive rollers R1 to R3, the rotary drum DR, and the tension adjusting rollers RT1 and RT2 in the edge position controller EPC, and heads for the process device PR2. Will be transported.

The edge position controller EPC adjusts the position of the substrate FS conveyed from the process apparatus PR1 in the width direction (Y direction and the short direction of the substrate FS). That is, in the edge position controller EPC, the position at the end (edge) in the width direction of the substrate FS conveyed under a predetermined tension is about ± tens of μm to several tens of μm with respect to the target position. The position of the substrate FS in the width direction is adjusted so as to fall within the range (allowable range) of. The edge position controller EPC is an edge sensor (end detection unit) (not shown) that detects the position of the roller on which the substrate FS is laid under a predetermined tension and the end portion (edge) of the substrate FS in the width direction. And have. The edge position controller EPC moves the roller of the edge position controller EPC in the Y direction based on the detection signal detected by the edge sensor, and adjusts the position of the substrate FS in the width direction. The drive roller R1 rotates while holding both the front and back surfaces of the substrate FS conveyed from the edge position controller EPC, and conveys the substrate FS toward the rotating drum DR. The edge position controller EPC moves the roller in the Y direction so that the long direction of the substrate FS wound around the rotary drum DR is always orthogonal to the central axis AXo of the rotary drum DR, and the width of the substrate FS. Adjust the position in the direction as appropriate. The edge position controller EPC may appropriately adjust the parallelism between the rotation axis of the roller of the edge position controller EPC and the central axis AXo so as to correct the inclination error in the traveling direction of the substrate FS.

The rotating drum DR is a cylinder having a central axis AXo extending in the Y direction and extending in a direction intersecting the direction in which gravity acts (Z direction), and a cylindrical outer peripheral surface having a predetermined radius (constant radius) from the central axis AXo. It is a shaped drum stage. The rotary drum DR rotates around the central axis AXo while supporting (holding) a part of the substrate FS in a cylindrical surface shape in the elongated direction following the outer peripheral surface (circumferential surface, cylindrical surface). Then, the substrate FS is conveyed in the + X direction. The rotating drum DR supports a region (part) on the substrate FS on which the beam LB (spot light SP) projected from the exposure head 16 is projected by its outer peripheral surface. The rotary drum DR supports (closely holds) the substrate FS in the longitudinal direction from the surface (back surface) side opposite to the surface on which the electronic device is formed (the surface on which the photosensitive surface is formed). Shafts Sft supported by annular bearings are provided on both sides of the rotating drum DR in the Y direction so that the rotating drum DR rotates around the central axis AXo. The shaft Sft rotates at a constant rotational speed around the central axis AXo by being applied with rotational torque from a rotational drive source (for example, a motor, a reduction mechanism, etc.) controlled by the control device 18 (for example, a motor or a reduction mechanism). For convenience, a plane including the central axis AXo and parallel to the YZ plane is referred to as a central plane Poc.

The drive rollers R2 and R3 are arranged at predetermined intervals along the transport direction (+ X direction) of the substrate FS, and give a predetermined slack (play) to the substrate FS after exposure. Like the drive roller R1, the drive rollers R2 and R3 rotate while holding both the front and back surfaces of the substrate FS, and convey the substrate FS toward the process apparatus PR2. The tension adjusting rollers RT1 and RT2 are urged in the −Z direction, and a predetermined tension is applied to the substrate FS wound around the rotating drum DR and supported in the elongated direction. As a result, the tension applied to the substrate FS applied to the rotary drum DR in the long direction is stabilized within a predetermined range. The control device 18 rotates the drive rollers R1 to R3 by controlling a rotation drive source (for example, a motor, a speed reducer, etc.) (not shown). In principle, the rotation axes of the drive rollers R1 to R3 and the rotation axes of the tension adjusting rollers RT1 and RT2 are parallel to the central axis AXo of the rotation drum DR.

The light source device 14 has a light source (pulse light source) and emits a pulsed beam (pulse beam, energy beam, laser) LB. This beam LB is ultraviolet light having a peak wavelength in a wavelength band of 370 nm or less, and the emission frequency (oscillation frequency) of the beam (pulse light) LB is Fe. The beam LB emitted by the light source device 14 is incident on the exposure head 16. The light source device 14 emits light of the beam LB at the emission frequency Fe according to the control of the control device 18 and emits the beam LB. As the light source device 14, a semiconductor laser device that generates pulsed light in the infrared wavelength region, a fiber amplifier that amplifies the pulsed light in the infrared wavelength region, and pulsed light in the ultraviolet wavelength region are used as the amplified pulsed light in the infrared wavelength region. A fiber amplifier laser light source composed of a wavelength conversion element (harmonic generation element) or the like that converts the wavelength to the above may be used. In that case, it is possible to obtain high-intensity pulsed ultraviolet light having an oscillation frequency Fe of several hundred MHz and a light emission time of one pulsed light of about picoseconds. Although the light source device 14 is designed to emit a pulsed beam LB, it may be a light source device (CW laser, high-intensity ultraviolet lamp, etc.) that emits a continuously emitting beam LB.

The exposure head 16 includes a plurality of scanning units MDn (n = 1, 2, ..., 6) on which the beam LB from the light source device 14 is incident. The exposure head 16 scans the spot light SP in the Y direction while irradiating a part of the substrate FS supported on the outer peripheral surface of the rotating drum DR with the spot light SP by the plurality of scanning units MDn (MD1 to MD6). To do. This makes it possible to draw a predetermined pattern on the irradiated surface of the substrate FS (on the substrate FS). The exposure head 16 is a so-called multi-beam type exposure head in which a plurality of scanning units MDn (MD1 to MD6) having the same configuration are arranged. Each scanning unit MDn (MD1 to MD6) draws a pattern on the substrate FS using a beam from the light source device 14. Hereinafter, the beam LB from the light source device 14 incident on the scanning units MDn (MD1 to MD6) may be represented by LBn (LB1 to LB6). Therefore, the beam LBn incident on the scanning unit MD1 is represented by LB1, and similarly, the beam LBn incident on the scanning units MD2 to MD6 is represented by LB2 to LB6.

As shown in FIG. 2, the plurality of scanning units MDn (MD1 to MD6) are arranged in a predetermined arrangement relationship. The plurality of scanning units MDn (MD1 to MD6) are arranged in a staggered arrangement in two rows in the transport direction (X direction) of the substrate FS with the central surface Poc interposed therebetween. The odd-numbered scanning units MD1, MD3, and MD5 are arranged on the upstream side (-X direction side) of the substrate FS in the transport direction with respect to the central surface Poc, and are 1 at predetermined intervals along the Y direction. Arranged in a row. The even-numbered scanning units MD2, MD4, and MD6 are arranged on the downstream side (+ X direction side) of the substrate FS in the transport direction with respect to the central surface Poc, and are arranged in a row at predetermined intervals along the Y direction. Is located in. The odd-numbered scanning units MD1, MD3, MD5 and the even-numbered scanning units MD2, MD4, MD6 are provided symmetrically with respect to the central surface Poc.

Each scanning unit MDn (MD1 to MD6) projects the beam LBn (LB1 to LB6) from the light source device 14 toward the substrate FS, and projects the projected beam LBn (LB1 to LB6) on the irradiated surface of the substrate FS. Converges in the spot light SP. Further, each scanning unit MDn (MD1 to MD6) scans the spot light SP converged on the substrate FS in one dimension (in the Y direction) by a rotating polygon mirror PM (see FIG. 6). The spot light SP of the beam LBn (LB1 to LB6) is one-dimensionally scanned in the main scanning direction (Y direction) on the irradiated surface of the substrate FS by the rotated polygon mirror PM of each scanning unit MDn (MD1 to MD6). A linear drawing line (scanning line) SLn (SL1 to SL6) on which a pattern for one line is drawn is defined on the irradiated surface of the substrate FS. The drawing lines SLn (SL1 to SL6) show the scanning locus of the spot light SP of the beam LBn (LB1 to LB6) irradiated on the substrate FS. The configuration of the scanning unit (scanning module, beam scanning unit) MDn will be described in detail later.

The scanning unit MD1 scans the spot light SP of the beam LB1 along the drawing line SL1 in the main scanning direction (Y direction), and similarly, the scanning units MD2 to MD6 draw the spot light SP of the beams LB2 to LB6. Scan in the main scanning direction (Y direction) along SL2 to SL6. Each drawing line (scanning line) SLn (SL1 to SL6) of the plurality of scanning units MDn (MD1 to MD6) is in the Y direction (width direction of the substrate FS, scanning direction) as shown in FIGS. 2 and 3. It is set to be spliced together without being separated from each other. The beams LBn (LB1 to LB6) incident on each of the scanning units MDn (MD1 to MD6) are linearly polarized (P-polarized or S-polarized) beams polarized in a predetermined direction, and in the present embodiment, they are P-polarized. Beam is incident.

As shown in FIGS. 2 and 3, each scanning unit MDn (MD1 to MD6) covers the entire scanning region in the width direction of the exposure region W so that the entire plurality of scanning units MDn (MD1 to MD6) cover the entire width direction of the exposure region W. Sharing. As a result, the plurality of scanning units MDn (MD1 to MD6) draw a pattern for each of the plurality of divided exposure regions divided in the width direction of the substrate FS. For example, assuming that the scanning width (the length of the drawing line SLn) in the Y direction by one scanning unit MDn is about 20 to 60 mm, the odd-numbered scanning units MD1, MD3, and MD5 and the even-numbered scanning unit MD2 By arranging a total of six scanning units MDn, including three MD4 and MD6, in the Y direction, the width in the Y direction that can be drawn is expanded to about 120 to 360 mm. In principle, the lengths (scanning lengths) of the drawing lines SLn (SL1 to SL6) are the same. That is, when the drawing magnification is the initial value (without magnification correction), the scanning distances of the spot light SPs of the beams LB1 to LB6 scanned along each of the drawing lines SL1 to SL6 are the same. If the width of the exposure area W is desired to be widened, it can be dealt with by preparing a scanning unit MDn in which the length of the drawing line SLn itself is lengthened or by increasing the number of scanning units MDn arranged in the Y direction. ..

Each drawing line SLn (SL1 to SL6) is set to be slightly shorter than the maximum length (maximum scanning length) at which the spot light SP can actually scan on the irradiated surface. For example, when the drawing magnification in the main scanning direction (Y direction) is the initial value (without magnification correction) and the scanning length of the drawing line SLn capable of drawing a pattern is 30 mm, the maximum scanning of the spot light SP on the irradiated surface The length is set to about 31 mm with a margin of about 0.5 mm on each of the scanning start point (drawing start point) side and the scanning end point (drawing end point) side of the drawing line SLn. By setting in this way, the position of the drawing line SLn of 30 mm can be shifted (finely adjusted) in the main scanning direction and the drawing magnification can be finely adjusted within the range of the maximum scanning length of the spot light SP of 31 mm. Is possible. The maximum scanning length of the spot light SP is not limited to 31 mm, and is mainly determined by the aperture and position of the fθ lens FT (see FIG. 6) provided after the polygon mirror PM in the scanning unit MDn.

The plurality of drawing lines SLn (SL1 to SL6) are arranged in a staggered arrangement in two rows in the circumferential direction of the rotating drum DR with the central surface Poc interposed therebetween. The odd-numbered drawing lines SL1, SL3, and SL5 are located on the irradiated surface on the upstream side (−X direction side) of the substrate FS wound around the rotating drum DR with respect to the central surface Poc. The even-numbered drawing lines SL2, SL4, and SL6 are located on the irradiated surface on the downstream side (+ X direction side) of the substrate FS wound around the rotating drum DR with respect to the central surface Poc. The drawing lines SL1 to SL6 are substantially parallel to the width direction (Y direction) of the substrate FS, that is, along the central axis AXo of the rotating drum DR.

The drawing lines SL1, SL3, and SL5 are arranged in a straight line along the width direction (scanning direction) of the substrate FS at predetermined intervals. Similarly, the drawing lines SL2, SL4, and SL6 are arranged in a straight line along the width direction (scanning direction) of the substrate FS at predetermined intervals. At this time, the drawing line SL2 is arranged between the drawing line SL1 and the drawing line SL3 in the width direction of the substrate FS. Similarly, the drawing line SL3 is arranged between the drawing line SL2 and the drawing line SL4 in the width direction of the substrate FS. The drawing line SL4 is arranged between the drawing line SL3 and the drawing line SL5 in the width direction of the substrate FS, and the drawing line SL5 is arranged between the drawing line SL4 and the drawing line SL6 in the width direction of the substrate FS. Will be done.

The scanning direction of the spot light SP of the beams LB1, LB3, and LB5 scanned along each of the odd-numbered drawing lines SL1, SL3, and SL5 is a one-dimensional direction, which is the −Y direction. The scanning direction of the spot light SP of the beams LB2, LB4, and LB6 scanned along each of the even-numbered drawing lines SL2, SL4, and SL6 is a one-dimensional direction, which is the + Y direction. Therefore, the scanning direction of the spot light SP scanned along the drawing lines SL1, SL3, SL5 and the scanning direction of the spot light SP scanned along the drawing lines SL2, SL4, SL6 are opposite to each other. There is. As a result, the end of the drawing lines SL1, SL3, SL5 on the drawing start point side and the end of the drawing lines SL2, SL4, SL6 on the drawing start point side are adjacent to each other in the Y direction or overlap with each other by a predetermined length. To do. Further, the end of the drawing lines SL3 and SL5 on the drawing end point side and the end of the drawing lines SL2 and SL4 on the drawing end point side are adjacent to each other in the Y direction or overlap with each other by a predetermined length. The length (predetermined length) at which the ends of the drawing lines SLn adjacent to each other in the Y direction partially overlap each other is, for example, a drawing start point or a drawing end point with respect to the length of each drawing line SLn. It is preferable that the range is several% or less in the Y direction. Note that joining the drawing lines SLn in the Y direction means that the ends of the patterns drawn on the substrate FS in each of the drawing lines SLn adjacent to each other in the Y direction are exactly adjacent to each other in the Y direction, or a part of them. (Predetermined length) Means overlapping states.

In the case of the present embodiment, since the beam LB (LBn) from the light source device 14 is pulsed light, the spot light SP projected on the drawing line SLn during the main scan has an oscillation frequency of the beam LB (LBn). It becomes discrete according to Fe. Therefore, it is necessary to overlap the spot light SP projected by the one-pulse light of the beam LB (LBn) and the spot light SP projected by the next one-pulse light in the main scanning direction. The amount of overlap is set by the size φ of the spot light SP, the scanning speed Vs of the spot light SP, and the oscillation frequency Fe of the beam LB (LBn), but in the present embodiment, it is about φ / 2. Therefore, with respect to the sub-scanning direction (direction orthogonal to the drawing line SLn), the substrate FS is effective for the spot light SP between one scanning of the spot light SP along the drawing line SLn and the next scanning. It is desirable to set it so that it moves by a distance of about 1/2 or less of the appropriate size φ. Further, the exposure amount to the photosensitive functional layer on the substrate FS can be set by adjusting the peak value of the beam LB (LBn), but the exposure amount can be adjusted in a situation where the intensity of the beam LB (LBn) cannot be increased. If it is desired to increase, the scanning speed Vs in the main scanning direction of the spot light SP is decreased, the oscillation frequency Fe of the beam LB (LBn) is increased, or the transport speed Vt in the sub-scanning direction of the substrate FS is decreased. , The amount of overlap in the main scanning direction or the sub-scanning direction of the spot light SP may be increased to 1/2 or more of the effective size φ. The scanning speed Vs of the spot light SP in the main scanning direction increases in proportion to the rotation speed (rotation speed Vp) of the polygon mirror PM.

The width (dimension in the X direction) of the drawing line SLn in the sub-scanning direction is a thickness corresponding to the size (diameter) φ of the spot light SP. For example, when the size φ of the spot light SP is 3 μm, the width of each drawing line SLn in the sub-scanning direction is also 3 μm. When projecting the spot light SP along the drawing line SLn while overlapping by 1/2 of the size φ of the spot light SP, the drawing lines SLn (for example, the drawing line SL1 and the drawing line SL2) adjacent to each other in the Y direction are projected. However, it is better to overlap only φ / 2. The effective size φ of the spot light SP is 1 / e ² (or 1/2 of the full width at half maximum) of the peak intensity of the spot light SP when the intensity distribution of the spot light SP is approximated by a Gaussian distribution. It is decided by.

Each scanning unit MDn (MD1 to MD6) attaches the beam LBn (LB1 to LB6) to the substrate FS so that the beam LBn (LB1 to LB6) is perpendicular to the irradiated surface of the substrate FS at least in the XZ plane. Irradiate toward. That is, each scanning unit MDn (MD1 to MD6) has a beam in the XZ plane so as to advance toward the central axis AXo of the rotating drum DR, that is, to be parallel to the normal of the irradiated surface of the substrate FS. LBn (LB1 to LB6) is irradiated (projected) on the substrate FS. Further, in each scanning unit MDn (MD1 to MD6), the beam LBn (LB1 to LB6) irradiating the drawing lines SLn (SL1 to SL6) is directed to the irradiated surface of the substrate FS in a plane parallel to the YZ plane. The beams LBn (LB1 to LB6) are irradiated toward the substrate FS so as to be vertical. That is, the beams LBn (LB1 to LB6) projected on the substrate FS are scanned in a telecentric state with respect to the main scanning direction of the spot light SP on the irradiated surface. Here, a line (or line) perpendicular to the irradiated surface of the substrate FS passes through a specific point (for example, a midpoint) of a predetermined drawing line SLn (SL1 to SL6) defined by each scanning unit MDn (MD1 to MD6). The optical axis) is referred to as the irradiation central axis Len (Le1 to Le6) (see FIG. 2). Therefore, the beam LBn projected from each scanning unit MDn onto the irradiated surface of the substrate FS so as to pass through the specific point of the drawing line SLn is coaxial with the irradiation central axis Len.

Each irradiation central axis Len (Le1 to Le6) is a line connecting the drawing lines SLn (SL1 to SL6) and the central axis AXo in the XZ plane. The irradiation central axes Le1, Le3, and Le5 of the odd-numbered scanning units MD1, MD3, and MD5 are in the same direction in the XZ plane. The irradiation central axes Le2, Le4, and Le6 of the odd-numbered scanning units MD2, MD4, and MD6 are in the same direction in the XZ plane. Further, in the XZ plane, the irradiation central axes Le1, Le3, Le5 and the irradiation central axes Le2, Le4, Le6 are set so that the angles with respect to the central surface Poc are ± θ1 (FIGS. 1, FIG. 2).

As shown in FIG. 3, the alignment microscopes ALGm (ALG1 to ALG4) shown in FIG. 1 have position information (m = 1, 2, 3, 4) of a plurality of alignment marks MKm (m = 1, 2, 3, 4) formed on the substrate FS. It is for detecting mark position information), and is provided along the Y direction. The marks MKm (MK1 to MK4) are reference marks for relatively aligning (aligning) a predetermined pattern drawn in the exposed area W on the irradiated surface of the substrate FS with the substrate FS. The plurality of alignment microscopes ALGm (ALG1 to ALG4) are used to detect the mark position information of a plurality of mark MKm (MK1 to MK4) on the substrate FS supported by the circumferential surface of the rotating drum DR. MK1 to MK4) are imaged. The alignment microscopes ALGm (ALG1 to ALG4) are provided on the upstream side (-X direction side) of the substrate FS in the transport direction from the irradiated area (drawing lines SL1 to SL6) on the substrate FS of the spot light SP by the exposure head 16. Has been done.

The alignment microscope ALGm (ALG1 to ALG4) provides a magnified image of the observation region Vwm (Vw1 to Vw4) including the light source that projects the illumination light for alignment onto the substrate FS and the mark MKm (MK1 to MK4) on the surface of the substrate FS. It has an observation optical system (including an objective lens) to be obtained, and an image pickup device such as a CCD or CMOS that captures an enlarged image thereof with a high-speed shutter while the substrate FS is moving in the transport direction. The image pickup signal imaged by each alignment microscope ALGm (ALG1 to ALG4) is sent to the control device 18. The control device 18 detects the marks MKm (MK1 to MK4) on the substrate FS by analyzing the image of the image pickup signal. Then, the control device 18 has the mark MKm (MK1 to MK4) detected by image analysis of the imaging signal captured by each alignment microscope ALGm (ALG1 to ALG4) and the rotating drum DR at the moment when the image is captured by the alignment microscope ALGm. The mark position information of the mark MKm (MK1 to MK4) on the substrate FS is detected with high accuracy based on the information of the rotation position of the above (count value CD1 based on the encoders EN1a and EN1b described later). This mark position information includes the position information of the substrate FS. The illumination light for alignment is light in a wavelength range that has almost no sensitivity to the photosensitive functional layer on the substrate FS, for example, light having a wavelength of about 500 to 800 nm.

A plurality of marks MKm (MK1 to MK4) are provided around each exposure region W. A plurality of marks MK1 and MK4 are formed on both sides of the substrate FS in the exposure region W in the width direction at regular intervals Dh along the longitudinal direction of the substrate FS. The mark MK1 is formed on the −Y direction side in the width direction of the substrate FS, and the mark MK4 is formed on the + Y direction side in the width direction of the substrate FS. Such marks MK1 and MK4 are arranged so as to be in the same position in the long direction (X direction) of the substrate FS when the substrate FS is not deformed due to a large tension or a thermal process. Will be done. Further, the marks MK2 and MK3 are located between the mark MK1 and the mark MK4 in the width direction (short direction) of the substrate FS in the gap (margin) CLE between the + X direction side and the −X direction side of the exposure region W. It is formed along. The mark MK2 is formed on the −Y direction side in the width direction of the substrate FS, and the mark MK3 is formed on the + Y direction side of the substrate FS. Further, the distance between the mark MK1 arranged at the side end in the −Y direction of the substrate FS and the mark MK2 of the gap CLE in the Y direction, the distance between the mark MK2 of the gap CLE and the mark MK3 in the Y direction, and the distance between the mark MK3 and the mark MK3 in the Y direction, and the distance between the mark MK2 and the mark MK3 The distance between the mark MK4 arranged at the side end in the + Y direction and the mark MK3 of the gap CLE in the Y direction is set to the same distance. These marks MKm (MK1 to MK4) may be formed together at the time of forming the pattern layer of the first layer. For example, when the pattern of the first layer is exposed, the pattern for the mark MKm may also be exposed around the exposure region W where the pattern is exposed. The mark MKm may be formed in the exposure region W. For example, it may be formed in the exposure region W and along the contour of the exposure region W. Further, a pattern portion at a specific position or a portion having a specific shape in the pattern of the electronic device formed in the exposure region W may be used as a mark MKm for alignment.

Note that FIG. 3 shows an array of a plurality of marks MKm (MK1 to MK4) in a state where the exposure region W is not deformed. Therefore, when the substrate FS is deformed and the exposure region W is deformed (distorted) due to a large tension or the influence of a thermal process, the arrangement of a plurality of marks MKm (MK1 to MK4) with respect to the substrate FS. Will also be deformed (distorted). This means that the arrangement state of a plurality of marks MKm (MK1 to MK4) is deformed (distorted) even when each detection position (resting coordinate system) of the alignment microscopes ALG1 to ALG4 fixed in the apparatus is used as a reference. ) Means to be observed.

The plurality of alignment microscopes ALG1 to ALG4 are provided in the order of ALG1 to ALG4 from the −Y direction side of the substrate FS corresponding to the positions of the plurality of marks MK1 to MK4. Specifically, the alignment microscope ALG1 is arranged so that the mark MK1 is located in the observation region (detection region) Vw1 by the objective lens in the width direction of the substrate FS (in the Y direction). Similarly, the alignment microscopes ALG2 to ALG4 are arranged so that the marks MK2 to MK4 are located in the observation area Vw2 to Vw4 by the objective lens in the width direction (with respect to the Y direction) of the substrate FS. In the plurality of alignment microscopes ALGm (ALG1 to ALG4), the distance between the exposure position (drawing lines SL1 to SL6) and the observation area Vwm (Vw1 to Vw4) of the alignment microscope ALGm (ALG1 to ALG4) in the X direction is the exposure area. It is provided so as to be shorter than the length of W in the X direction. The number of alignment microscopes ALGm provided in the Y direction can be changed according to the number of marks MKm formed in the width direction of the substrate FS. The size of the substrate FS of the observation area Vwm on the irradiated surface is set to be about 100 to 500 μm square, although it is set according to the size of the mark MKm and the alignment accuracy (position measurement accuracy).

As shown in FIGS. 1 and 2, scale portions SDa and SDb having scales formed in a ring shape over the entire peripheral surface of the rotating drum DR in the circumferential direction are provided at both ends of the rotating drum DR. There is. The scale portions SDa and SDb are diffraction gratings in which concave or convex grid lines (scales) are engraved at a constant pitch (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotating drum DR, and are used as an incremental scale. It is composed. The scale portions SDa and SDb rotate integrally with the rotating drum DR around the central axis AXo. A plurality of encoder heads (reading heads, heads) ENja (EN1a to EN3a) and ENjb (EN1b to EN3b) are provided so as to face the scale portions SDa and SDb. The encoder heads (hereinafter, also simply referred to as encoders) ENja and ENjb optically detect the rotational position of the rotary drum DR. Three encoders ENja (EN1a to EN3a) are provided opposite to the scale portion SDa provided at the end on the −Y direction side of the rotary drum DR, and are provided at the end on the + Y direction side of the rotary drum DR. Three encoders ENjb (EN1b to EN3b) are provided so as to face the scale portion SDb. The encoders EN1a and EN1b are arranged at the same position with respect to the rotation direction (X direction) of the rotary drum DR. Similarly, the encoders EN2a and EN2b and the encoders EN3a and EN3b are also arranged at the same position with respect to the rotation direction (X direction) of the rotary drum DR.

The encoders ENja and ENjb project an optical beam for measurement toward the scale units SDa and SDb, and photoelectrically detect the reflected luminous flux (diffracted light) to detect the reflected light flux (diffracted light), thereby responding to a change in the position of the scale units SDa and SDb in the circumferential direction. The detected detection signal (two-phase signal) is output to the control device 18. The control device 18 counts the detection signal by the encoder counters ECN (ECN1 to ECN3) and the drawing counters SCN (SCN2, SCN3) shown in FIG. 7, whereby the amount of movement of the scales of the scale units SDa and SDb, that is, The rotation angle position and angle change of the rotary drum DR, or the movement amount of the substrate FS can be measured with a submicron resolution. The periodic change of the detection signals of the encoders ENja and ENjb corresponds to the pitch of the scales engraved on the scale portions SDa and SDb. Therefore, the encoder counters ECN1 to ECN3 and the drawing counters SCN2 and SCN3 measure the rotation angle position of the rotary drum DR by counting the movement of the scales of the scale units SDa and SDb read by the encoders ENja and ENjb. It can be said that it is doing. The plurality of encoder counters ECN1 to ECN3 individually count the detection signals from the plurality of encoders ENja (EN1a to EN3a) and ENjb (EN1b to EN3b), respectively. The drawing counters SCN2 and SCN3 individually count the detection signals from the encoders EN2a and EN2b and the encoders EN3a and EN3b. The encoder counters ECN1 to ECN3 and the drawing counters SCN2 and SCN2 will be described in detail later. However, the count values (count values) of the encoder counters ECN1 to ECN3 are set to CD1 to CD3, and the count values of the drawing counters SCN2 and SCN3 (total). Numerical values) are CW2 and CW3. The encoders ENja and ENjb and the encoder counter ECN form a rotation measurement system.

The encoders EN1a and EN1b are arranged on the installation directional line Lx1 with respect to the XZ plane. The installation azimuth line Lx1 is a line connecting the projection positions (reading positions) of the optical beams for measurement of the encoders EN1a and EN1b on the scale portions SDa and SDb and the central axis AXo with respect to the XZ plane. Further, the installation directional line Lx1 is a line connecting the observation regions Vwm (Vw1 to Vw4) of each alignment microscope ALGm (ALG1 to ALG4) and the central axis AXo in the XZ plane. That is, each alignment microscope ALGm (ALG1 to ALG4) is arranged on the installation directional line Lx1 in the XZ plane.

The encoders EN2a and EN2b are provided on the upstream side of the substrate FS in the transport direction with respect to the central surface Poc, and are provided on the downstream side of the encoders EN1a and EN1b in the transport direction of the substrate FS. The encoders EN2a and EN2b are arranged on the installation direction line Lx2 with respect to the XZ plane. The installation azimuth line Lx2 is a line connecting the projection positions (reading positions) of the optical beams for measurement of the encoders EN2a and EN2b on the scale portions SDa and SDb and the central axis AXo with respect to the XZ plane. The installation azimuth line Lx2 overlaps with the irradiation center axes Le1, Le3, and Le5 at the same angle position with respect to the XZ plane.

The encoders EN3a and EN3b are provided on the downstream side of the substrate FS in the transport direction with respect to the central surface Poc. The encoders EN3a and EN3b are arranged on the installation directional line Lx3 with respect to the XZ plane. The installation azimuth line Lx3 is a line connecting the projection positions (reading positions) of the optical beams for measurement of the encoders EN3a and EN3b on the scale portions SDa and SDb and the central axis AXo with respect to the XZ plane. The installation azimuth line Lx3 overlaps with the irradiation center axes Le2, Le4, and Le6 at the same angle position with respect to the XZ plane. The installation directional line Lx2 and the installation directional line Lx3 are set so that the angle with respect to the central surface Poc is ± θ1 in the XZ plane (see FIGS. 1 and 2).

By the way, the substrate FS is wound inside the scale portions SDa and SDb at both ends of the rotary drum DR. In FIG. 1, the radius of the outer peripheral surfaces of the scale portions SDa and SDb from the central axis AXo is set smaller than the radius of the outer peripheral surface of the rotating drum DR from the central axis AXo. However, as shown in FIG. 2, the outer peripheral surfaces of the scale portions SDa and SDb may be set to be the same as the outer peripheral surface of the substrate FS wound around the rotating drum DR. That is, the radius (distance) of the outer peripheral surfaces of the scale portions SDa and SDb from the central axis AXo and the radius (distance) of the outer peripheral surface (irradiated surface) of the substrate FS wound around the rotating drum DR from the central axis AXo. May be set to be the same. As a result, the encoders ENja (EN1a to EN3a) and ENjb (EN1b to EN3b) can detect the scale portions SDa and SDb at positions in the same radial direction as the irradiated surface of the substrate FS wound around the rotating drum DR. .. Therefore, it is possible to reduce the Abbe error caused by the difference between the measurement position by the encoders ENja and ENjb and the processing position (drawing lines SL1 to SL6) in the radial direction of the rotary drum DR.

However, since the thickness of the substrate FS as an irradiated body varies greatly from a dozen μm to a few hundred μm, the radius of the outer peripheral surface of the scale portions SDa and SDb and the outer peripheral surface of the substrate FS wound around the rotating drum DR It is difficult to always have the same radius. Therefore, in the case of the scale portions SDa and SDb shown in FIG. 2, the radius of the outer peripheral surface (scale surface) thereof is set to match the radius of the outer peripheral surface of the rotating drum DR. Further, it is also possible to configure the scale portions SDa and SDb with individual disks, and attach the disks (scale disks) coaxially to the shaft Sft of the rotating drum DR. Even in that case, it is preferable that the radius of the outer peripheral surface (scale surface) of the scale disk and the radius of the outer peripheral surface of the rotating drum DR are aligned so that the Abbe error is within the allowable value.

FIG. 4 is a partially enlarged view of the exposure apparatus EX. The exposure apparatus EX further includes a plurality of light introduction optical systems BDUn (n = 1, 2, ..., 6) and a main body frame UB. The plurality of light introduction optical systems BDUn (BDU1 to BDU6) guide the beam LB (LBn) from the light source device 14 to the plurality of scanning units MDn (MD1 to MD6). The light introduction optical system BDU1 guides the beam LB1 to the scanning unit MD1, and similarly, the light introduction optical system BDU2 to BDU6 guides the beams LB2 to LB6 to the scanning units MD2 to MD6. Each light introduction optical system BDUn (BDU1 to BDU6) corresponds to a beam LBn (LB1 to LB6) so that the optical axis of the beam LBn (LB1 to LB6) is coaxial with the irradiation central axis Len (Le1 to Le6). It ejects to the scanning unit MDn (MD1 to MD6). That is, the beam LB1 incident on the scanning unit MD1 from the light introduction optical system BDU1 is coaxial with the irradiation center axis Le1. Similarly, the beams LB2 to LB6 incident on the scanning units MD2 to MD6 from the light introduction optical system BDU2 to BDU6 are coaxial with the irradiation center axes Le2 to Le6. The beam LB from the light source device 14 is branched and incident on each light introduction optical system BDUn (BDU1 to BDU6) by an optical member such as a beam splitter or an optical deflector for switching (for example, an acousto-optic modulator). Or selectively incident.

The plurality of light introduction optical systems BDUn (BDU1 to BDU6) have a plurality of drawing optical elements AOMn (n = 1, 2, ..., 6). The plurality of drawing optical elements AOMn (AOM1 to AOM6) matrix the intensity of the beam LBn (LB1 to LB6) leading to the plurality of scanning units MDn (MD1 to MD6) in pixel units with the pattern to be drawn on the substrate FS. It is modulated (on / off) at high speed according to the design information PDn (PD1 to PD6) as two-dimensional bitmap data decomposed into a shape. The light introduction optical system BDU1 has a drawing optical element AOM1, and similarly, the light introduction optical system BDU2 to BDU6 has a drawing optical element AOM2 to AOM6. The drawing optical element (intensity modulation unit) AOMn is an acousto-optic modulator having transparency with respect to the beam LB. By using an ultrasonic signal (high frequency signal), the drawing optical element AOMn diffracts the beam LB from the incident light source device 14 at a diffraction angle corresponding to the high frequency frequency, and the optical path of the beam LB, that is, the traveling It is emitted as a primary diffracted beam with a different direction. The drawing optical elements AOMn (AOM1 to AOM6) diffract the incident beam LB according to the on / off of the drive signal (high frequency signal) from the AOM drive circuit 50 (see FIG. 8) provided in the exposure apparatus EX. The generation of the primary diffraction beam (beam LBn) is turned on / off.

When the drive signal (high frequency signal) from the control device 18 is off, the drawing optical elements AOMn (AOM1 to AOM6) transmit the beam LB from the incident light source device 14 without diffracting it. The beam LB is guided to an absorber (not shown) provided in the light introduction optical system BDUn (BDU1 to BDU6). This absorber is an optical trap that absorbs the laser beam LB for suppressing leakage of the laser beam LB to the outside. Therefore, when the drive signal is off, the beam (0th-order light, 0th-order beam) LB transmitted through the drawing optical elements AOMn (AOM1 to AOM6) does not enter the scanning units MDn (MD1 to MD6). That is, the intensity of the beams LBn (LB1 to LB6) passing through the scanning units MDn (MD1 to MD6) becomes a low level (zero). This means that the intensity of the spot light SP of the beams LBn (LB1 to LB6) irradiated on the irradiated surface is modulated to a low level (zero) when viewed on the irradiated surface of the substrate FS. To do.

On the other hand, the drawing optical elements AOMn (AOM1 to AOM6) generate primary diffracted light by diffracting the incident beam LB when the drive signal (high frequency signal) from the AOM drive circuit 50 is on. The beam LBn (LB1 to LB6), which is the next diffracted light, is guided to the scanning unit MDn (MD1 to MD6). Therefore, when the drive signal is on, the intensity of the beams LBn (LB1 to LB6) passing through the scanning units MDn (MD1 to MD6) becomes high. This means that the intensity of the spot light SP of the beams LBn (LB1 to LB6) irradiated on the irradiated surface is modulated to a high level when viewed on the irradiated surface of the substrate FS. In this way, by applying the on / off drive signal to the drawing optical elements AOMn (AOM1 to AOM6), the drawing optical elements AOMn (AOM1 to AOM6) can be switched on / off. The scanning units MDn (MD1 to MD6) and the drawing optical elements AOMn (AOM1 to AOM6) constitute a processing unit and a processing device that perform a process (drawing process) for forming an electronic device on the substrate FS.

The AOM drive circuit 50 applies to each drawing optical element AOMn (AOM1 to AOM6) based on the design information PDn (PD1 to PD6) according to the pattern drawn by each scanning unit MDn (MD1 to MD6). Turns on / off the drive signal (high frequency signal). Design information PDn (PD1 to PD6) is provided for each scanning unit MDn (MD1 to MD6). The design information PDn (PD1 to PD6) is stored in the design information storage unit 36 (see FIG. 8) of the control device 18, and is supplied from the control device 18 to the AOM drive circuit 50.

Here, the design information PDn (PD1 to PD6) will be briefly described. In the design information PDn (PD1 to PD6), the pattern drawn by each scanning unit MDn is set according to the size φ of the spot light SP. It is divided by pixels of dimensions, and each of the plurality of pixels is represented by logical information (pixel data) corresponding to the pattern. That is, the design information PDn (PD1 to PD6) has a row direction in the direction along the scanning direction (main scanning direction, Y direction) of the spot light SP, and is along the transport direction (secondary scanning direction, X direction) of the substrate FS. It is bitmap data composed of logical information of a plurality of pixels decomposed in two dimensions so that the direction is the column direction. The logical information of this pixel is 1-bit data of "0" or "1". The logical information of "0" means that the intensity of the spot light SP irradiated on the substrate FS is lowered, and the logical information of "1" means that the intensity of the spot light SP irradiated on the substrate FS is increased. Means to level. Therefore, the AOM drive circuit 50 turns off the drive signal (high frequency signal) applied to the drawing optical element AOMn when the pixel logic information is "0", and turns off the drive signal (high frequency signal) when the pixel logic information is "1". Turns on the drive signal (high frequency signal) applied to the drawing optical element AOMn.

The pixels for one row of the design information PDn (PD1 to PD6) correspond to one drawing line SLn, and the spot projected on the irradiated surface of the substrate FS along the one drawing line SLn. The intensity of the optical SP is modulated according to each logical information of one row of pixels. That is, the drawing line SLn means a scanning line in which the spot light SP is intensity-modulated and scanned by the logical information of one row of pixels, that is, it is drawn. The logical information of the pixels for one column is also called serial data DLn. Therefore, the design information PDn is bitmap data in which a plurality of serial data DLn such as serial data DLn in the first column, serial data DLn in the second column, ..., Etc. are arranged in the column direction. The serial data DLn of the design information PD1 corresponding to the scanning unit MD1 is referred to as DL1, and similarly, the serial data DLn of the design information PD2 to PD6 corresponding to the scanning units MD2 to MD6 is referred to as DL2 to DL6. By starting the driving of the drawing optical elements AOMn (AOM1 to AOM6) based on the serial data DLn (DL1 to DL6), the spots along the drawing lines SLn (SL1 to SL6) by each scanning unit MDn (MD1 to MD6). Drawing of the optical SP is started. That is, during the period in which the drawing optical elements AOMn (AOM1 to AOM6) are driven based on the serial data DLn (DL1 to DL6), the drawing lines SLn (SL1 to SL6) by the scanning units MDn (MD1 to MD6) are displayed. Scanning of the spot light SP along the line and its intensity modulation will be performed.

The number of pixels for one row (the number of pixels for serial data DLn) is determined according to the size of the pixel on the irradiated surface and the length of the drawing line SLn, and the size of one pixel is the size φ of the spot light SP. Depends on. Specifically, the size of one pixel is set to be about the same as or larger than the size φ of the spot light SP. When the effective size φ of the spot light SP is 3 μm, the size of one pixel is set to about 3 μm square or more. For example, when the size of one pixel is set to 3 μm and the spot light SP having a size φ of 3 μm overlaps by about 1/2 of the size φ, the two spots that emit pulse light in each of the main scanning direction and the sub scanning direction are emitted. The optical SP corresponds to one pixel. Therefore, the number of pixels for one row of the design information PDn (PD1 to PD6) is 1/2 times the number of spot light SPs (pulses) projected along the drawing line SLn. In order to draw a finer pattern, the effective size φ of the spot light SP may be made smaller and the size of one pixel may be set smaller.

FIG. 5 is a diagram showing the relationship between the pattern exposed to the exposure region W and the design information PDn (PD1 to PD6). In the present embodiment, the pattern exposed to the exposure region W is divided into a plurality of blocks B along the long direction of the substrate FS. That is, the exposure region (partial region) where the pattern is exposed by each of the plurality of scanning units MDn (MD1 to MD6) is divided into a plurality of blocks B along the longitudinal direction of the substrate FS. Specifically, the pattern (exposure area) is divided into one block Ba, a plurality of blocks Bb, and one block Bc along the longitudinal direction of the substrate FS. The pattern in the block Ba and the block Bc is a block (second block) B corresponding to a pattern that is not used repeatedly, and the pattern in the block Bb is a block (first block) corresponding to the pattern that is repeatedly used. ) B. Then, the partial design information (second partial design information) corresponding to the block Ba pattern (second pattern) and the partial design information (first partial design information) corresponding to the block Bb pattern (first pattern). And three partial design information (third partial design information) corresponding to the pattern (third pattern) of the block Bc are stored in the design information storage unit 36 as design information PDn (PD1 to PD6). ing. In the case of a display or the like in which the electronic device to be manufactured is composed of a plurality of thin film transistors (TFTs) and pixels arranged in a matrix, a part of the pattern exposed to the exposure area W is a repeat of the same unit pattern. Become. Therefore, the design information PDn may have one partial design information (first partial design information) corresponding to the block Bb with respect to the region (block Bb) where the same unit pattern is repeatedly exposed. The partial design information corresponding to the block Bb is used repeatedly. By doing so, the amount of data of the design information PDn (PD1 to PD6) can be suppressed.

Returning to the description of FIG. 4, the main body frame UB holds a plurality of optical introduction optical systems BDUn (BDU1 to BDU6) and a plurality of scanning units MDn (MD1 to MD6). The main body frame UB has a first frame Ub1 that holds a plurality of optical introduction optical systems BDUn (BDU1 to BDU6) and a second frame Ub2 that holds a plurality of scanning units MDn (MD1 to MD6). The first frame Ub1 holds a plurality of light introduction optical systems BDUn (BDU1 to BDU6) above (+ Z direction side) the plurality of scanning units MDn (MD1 to MD6) held by the second frame Ub2. The first frame Ub1 supports a plurality of optical introduction optical systems BDUn (BDU1 to BDU6) from the lower side (−Z direction). The odd-numbered optical introduction optical systems BDU1, BDU3, and BDU5 are supported by the first frame Ub1 at arrangement positions corresponding to the positions of the odd-numbered scanning units MD1, MD3, and MD5. That is, the odd-numbered optical introduction optical systems BDU1, BDU3, and BDU5 are 1 on the upstream side (-X direction side) of the substrate FS in the transport direction with respect to the central surface Poc at a predetermined interval along the Y direction. Placed in a row. The even-numbered optical introduction optical systems BDU2, BDU4, and BDU6 are supported by the first frame Ub1 at arrangement positions corresponding to the positions of the even-numbered scanning units MD2, MD4, and MD6. That is, the even-numbered optical introduction optical systems BDU2, BDU4, and BDU6 are 1 on the downstream side (-X direction side) of the substrate FS in the transport direction with respect to the central surface Poc at a predetermined interval along the Y direction. Placed in a row.

The first frame Ub1 is provided with a plurality of openings Hsn (Hs1 to Hs6) corresponding to the plurality of light introduction optical systems BDUn (BDU1 to BDU6). The plurality of openings Hsn (Hs1 to Hs6) allow the beams LBn (LB1 to LB6) emitted from the plurality of optical introduction optical systems BDUn (BDU1 to BDU6) to be scanned correspondingly without being blocked by the first frame Ub1. It is incident on the units MDn (MD1 to MD6). That is, the beam LBn (LB1 to LB6) emitted from the light introduction optical system BDUn (BDU1 to BDU6) passes through the openings Hsn (Hs1 to Hs6) and is incident on the corresponding scanning unit MDn (MD1 to MD6). .. The first frame Ub1 may support a plurality of optical introduction optical systems BDUn (BDU1 to BDU6) from the upper side (+ Z direction) side or from the side side (X direction side) side.

The second frame Ub2 includes a plurality of scanning units MDn (MD1 to MD6) so that each of the plurality of scanning units MDn (MD1 to MD6) can rotate (rotate) slightly around the irradiation central axis Len (Le1 to Le6). Is rotatably held. By rotating each scanning unit MDn (MD1 to MD6) around the irradiation central axis Len (Le1 to Le6), even when the scanning unit MDn (MD1 to MD6) is rotated, the scanning unit MDn (MD1) The positional relationship between the beam LBn (LB1 to LB6) incident on MD6) and the optical member in the scanning unit MDn (MD1 to MD6) does not change. That is, the relative positional relationship between the position of the beam LBn incident on each scanning unit MDn in the XY plane and the center position of the drawing line SLn corresponding to each scanning unit MDn in the XY plane does not change. Therefore, even when each scanning unit MDn (MD1 to MD6) rotates, each scanning unit MDn (MD1 to MD6) projects the spot light SP of the beam LBn (LB1 to LB6) onto the substrate FS. , The spot light SP can be scanned along each defined drawing line SLn (SL1 to SL6). By the rotation of each scanning unit MDn (MD1 to MD6), each drawing line SLn (SL1 to SL6) is rotated around the irradiation central axis Len (Le1 to Le6) on the irradiated surface of the substrate FS. As a result, each drawing line SLn (SL1 to SL6) is tilted with respect to the Y axis. The rotation of each scanning unit MDn (MD1 to MD6) around the irradiation central axis Len is performed by an actuator 52 (see FIG. 8) provided in the exposure apparatus EX under the control of the control device 18.

Even if the irradiation center axis Len of the scanning unit MDn and the axis (rotation center axis) in which the scanning unit MDn actually rotates do not completely coincide with each other, they may be coaxial within a predetermined allowable range. The predetermined allowable range includes, for example, the drawing start point (or drawing end point) of the actual drawing line SLn when the scanning unit MDn is rotated by a predetermined angle θsm, and the irradiation center axis Len and the rotation center axis. The amount of difference from the drawing start point (or drawing end point) of the design drawing line SLn when the scanning unit MDn is rotated by a predetermined angle θsm on the assumption that is exactly the same as that of the spot light SP. The main scanning direction is set to be within a predetermined distance (for example, the diameter of the spot light SP size φ). Further, even if the optical axis of the beam LBn actually incident on the scanning unit MDn does not completely coincide with the rotation center axis of the scanning unit MDn, it may be coaxial within the predetermined allowable range described above.

FIG. 6 is a diagram for explaining the configuration of the scanning unit MDn. Since each scanning unit MDn (MD1 to MD6) has the same configuration, the scanning unit MD1 will be described as an example. Further, in FIG. 6, the XtYtZt Cartesian coordinate system will be used for explanation. The Zt direction is a direction parallel to the irradiation central axis Le1. The Xt direction is on a plane orthogonal to the Zt direction, the substrate FS is a direction from the process device PR1 to the process device PR2 via the exposure device EX, and the Yt direction is on a plane orthogonal to the Zt direction. Therefore, the direction is orthogonal to the Xt direction. That is, the XtYtZt Cartesian coordinate system is a three-dimensional coordinate system obtained by rotating the XYZ Cartesian coordinate systems of FIGS. 1 and 4 around the Y axis so that the Z axis is parallel to the irradiation center axis Le1.

As shown in FIG. 6, in the scanning unit MD1, the reflection mirror M10, the beam expander BE, the reflection mirror M11, and the polarization along the traveling direction of the beam LB1 from the incident position of the beam LB1 to the irradiated surface of the substrate FS. Beam splitter BS, reflection mirror M12, image shift optical member (parallel flat plate) SR, deflection adjustment optical member (prism) DP, field aperture FA, reflection mirror M13, λ / 4 wavelength plate QW, cylindrical lens CYa, reflection mirror M14, A polygon mirror PM, an fθ lens FT, a reflection mirror M15, and a cylindrical lens CYb are provided. Further, an optical lens G10 and a photodetector DT for detecting the reflected light from the irradiated surface of the substrate FS or the rotating drum DR via the polarizing beam splitter BS are provided in the scanning unit MD1.

The beam LB1 incident on the scanning unit MD1 travels in the −Zt direction and is incident on the reflection mirror M10 tilted 45 degrees with respect to the XtYt plane. The beam LB1 incident on the scanning unit MD1 is incident on the reflection mirror M10 so that its optical axis is coaxial with the irradiation center axis Le1. The reflection mirror M10 functions as an incident optical member that receives the beam LB1 and causes it to enter the scanning unit MD1. The reflection mirror M10 reflects the incident beam LB1 in the −Xt direction toward the reflection mirror M11 away from the reflection mirror M10 in the −Xt direction along the optical axis AXa set parallel to the Xt axis. Therefore, the optical axis AXa is orthogonal to the irradiation center axis Le1 in a plane parallel to the XtZt plane. The beam LB1 reflected by the reflection mirror M10 passes through the beam expander BE arranged along the optical axis AXa and is incident on the reflection mirror M11. The beam expander BE expands the diameter of the transmitted beam LB1. The beam expander BE has a condensing lens Be1 and a collimated lens Be2 that makes the beam LB1 diverging after being converged by the condensing lens Be1 into parallel light.

The reflection mirror M11 is arranged at an angle of 45 degrees with respect to the YtZt plane, and reflects the incident beam LB1 in the −Yt direction toward the polarization beam splitter BS arranged away from the reflection mirror M11 in the −Yt direction. The polarization splitting surface of the polarization beam splitter BS is arranged at an angle of 45 degrees with respect to the YtZt plane. The polarization beam splitter BS reflects a P-polarized beam and transmits a linearly polarized (S-polarized) beam polarized in a direction orthogonal to the P-polarized light. Since the beam LB1 incident on the scanning unit MD1 is a P-polarized beam, the polarization beam splitter BS reflects the beam LB1 from the reflection mirror M11 in the −Xt direction and guides the beam LB1 to the reflection mirror M12.

The reflection mirror M12 is arranged at an angle of 45 degrees with respect to the XtYt plane, and the incident beam LB1 is arranged along the optical axis AXc parallel to the Zt axis in the −Zt direction away from the reflection mirror M12. It reflects in the -Zt direction toward M13. The beam LB1 reflected by the reflection mirror M12 passes through the image shift optical member SR, the deflection adjustment optical member DP, and the field aperture (field diaphragm) FA arranged along the optical axis AXc to the reflection mirror M13. Incident. The image shift optical member SR two-dimensionally adjusts the center position in the cross section of the beam LB1 in a plane (XtYt plane) orthogonal to the traveling direction (optical axis AXc) of the beam LB1. The image shift optical member SR is composed of two quartz parallel plates Sr1 and Sr2 arranged along the optical axis AXc. The parallel plate Sr1 is rotatable (rotatable) about the Xt axis and is a parallel plate. Sr2 is rotatable (rotatable) about the Yt axis. By inclining these two parallel flat plates Sr1 and Sr2 around the Xt axis and the Yt axis, respectively, the center position in the cross section of the beam LB1 is two-dimensionally minute in the XtYt plane orthogonal to the traveling direction of the beam LB1. shift. The parallel flat plates Sr1 and Sr2 are driven by an actuator (driving unit) (not shown) under the control of the control device 18.

The deflection adjustment optical member DP finely adjusts the inclination of the beam LB1 that has been reflected by the reflection mirror M12 and has passed through the image shift optical member SR with respect to the optical axis AXc. The deflection adjusting optical member DP is composed of two wedge-shaped prisms Dp1 and Dp2 arranged along the optical axis AXc. Each of the prisms Dp1 and Dp2 is independently provided so as to be rotatable 360 degrees around the optical axis AXc. By adjusting the rotation angle positions of the two prisms Dp1 and Dp2, the axis of the beam LB1 reaching the reflection mirror M13 is made parallel to the optical axis AXc, or the axis of the beam LB1 reaching the irradiated surface of the substrate FS. Is parallel to the irradiation central axis Le1. The center position of the beam LB1 after being adjusted in parallel by the two prisms Dp1 and Dp2 may be shifted two-dimensionally in a plane parallel to the cross section of the beam LB1, but the shift is an image shift. It can be restored by the optical member SR. The prisms Dp1 and Dp2 are driven by an actuator (driving unit) (not shown) under the control of the control device 18.

The beam LB1 that has passed through the image shift optical member SR and the deflection adjustment optical member DP passes through the circular aperture of the field aperture FA and reaches the reflection mirror M13. The circular aperture of the field aperture FA is a diaphragm that cuts the base portion of the intensity distribution in the cross section of the beam LB1 enlarged by the beam expander BE. When the field aperture FA is a variable iris diaphragm in which the aperture of the circular aperture can be adjusted, the intensity (luminance) of the spot light SP can be adjusted.

The reflection mirror M13 is arranged at an angle of 45 degrees with respect to the XtYt plane, and reflects the incident beam LB1 in the + Xt direction toward the reflection mirror M14 arranged away from the reflection mirror M13 in the + Xt direction. The beam LB1 reflected by the reflection mirror M13 is incident on the reflection mirror M14 after passing through the λ / 4 wave plate QW and the cylindrical lens CYa. The reflection mirror M14 reflects the incident beam LB1 toward the polygon mirror (scanning deflection member) PM. The polygon mirror PM reflects the incident beam LB1 toward the + Xt direction side toward the fθ lens FT arranged away from the polygon mirror PM on the + Xt direction side. The polygon mirror PM deflects (reflects) the incident beam LB1 one-dimensionally in a plane parallel to the XtYt plane in order to scan the spot light SP of the beam LB1 on the irradiated surface of the substrate FS. Specifically, the polygon mirror PM is a rotating multi-plane having a rotation axis AXp extending in the Zt direction and a plurality of reflection surface RPs (eight reflection surface RPs in the present embodiment) formed around the rotation axis AXp. It is a mirror. By rotating this polygon mirror PM around the rotation axis AXp in a predetermined rotation direction, the reflection angle of the pulsed beam LB1 irradiated on the reflection surface RP can be continuously changed.

As a result, the reflection direction (deflection direction) of the beam LB1 is continuously changed by one reflection surface RP, and the spot light SP of the beam LB1 irradiated on the irradiated surface of the substrate FS is mainly drawn along the drawing line SL1. It is possible to scan one-dimensionally in the scanning direction (width direction of the substrate FS, Y direction). That is, one reflecting surface RP can scan the spot light SP of the pulsed beam LB1 oscillating at the oscillation frequency Fe along one drawing line SL1. Therefore, in one rotation of the polygon mirror PM, the number of scans of the spot light SP along the drawing line SL1 on the irradiated surface of the substrate FS is eight, which is the same as the number of the reflecting surface RP. Under the control of the control device 18, the polygon mirror PM is rotated at a constant speed (rotation speed) by the polygon drive unit RM including a digital motor and the like.

The cylindrical lens CYa whose generatrix is parallel to the Yt direction transmits the incident beam LB1 on the reflection surface RP of the polygon mirror PM in the non-scanning direction (Zt direction) orthogonal to the scanning direction (rotation direction) by the polygon mirror PM. Converge with. As a result, the beam LB1 that converges on the reflecting surface RP of the polygon mirror PM has a slit shape in which the Yt direction is the longitudinal direction and the Zt direction is the lateral direction. With this cylindrical lens CYa and the cylindrical lens CYb described later, even if the reflecting surface RP is tilted with respect to the Zt direction (the tilt of the reflecting surface RP with respect to the normal of the XtYt plane), the influence thereof is suppressed. be able to. For example, it is possible to prevent the irradiation position (drawing line SL1) of the beam LB1 irradiated on the irradiated surface of the substrate FS from shifting in the Xt direction due to a slight tilt error for each reflecting surface RP of the polygon mirror PM. ..

The fθ lens FT having an optical axis AXf extending in the Xt axis direction is a telecentric scan lens that projects the beam LB1 reflected by the polygon mirror PM onto the reflection mirror M15 so as to be parallel to the optical axis AXf in the XtYt plane. Is. The angle of incidence of the beam LB1 on the fθ lens FT (angle of incidence of the beam LB1 with respect to the optical axis AXf) θ changes according to the rotation angle (θ / 2) of the polygon mirror PM. The fθ lens FT projects the beam LB1 at an image height position on the irradiated surface of the substrate FS proportional to the incident angle θ thereof via the reflection mirror M15 and the cylindrical lens CYb. Assuming that the focal length is fo and the image height position is y, the fθ lens FT is designed to satisfy the relationship (distortion aberration) of y = fo · θ. Therefore, the fθ lens FT makes it possible to accurately scan the beam LB1 in the Yt direction (Y direction) at a constant velocity. When the angle of incidence θ on the fθ lens FT is 0 degrees, the beam LB1 incident on the fθ lens FT travels along the optical axis AXf.

The reflection mirror M15 reflects the incident beam LB1 toward the substrate FS via the cylindrical lens CYb in the −Zt direction. The beam LB1 projected on the substrate FS by the fθ lens FT and the cylindrical lens CYb whose generatrix is parallel to the Yt direction is a minute spot light having a diameter of about several μm (for example, 3 μm) on the irradiated surface of the substrate FS. Converged in SP. Further, the spot light SP projected on the irradiated surface of the substrate FS is one-dimensionally scanned by the rotating polygon mirror PM along the drawing line SL1 extending in the Yt (Y) direction. The optical axis AXf of the fθ lens FT and the irradiation center axis Le1 are on the same plane, and the plane is parallel to the XtZt plane. Therefore, the beam LB1 traveling on the optical axis AXf is reflected by the reflection mirror M15 in the −Zt direction, and is projected onto the substrate FS coaxially with the irradiation center axis Le1. In the present embodiment, at least the fθ lens FT functions as a projection optical system that projects the beam LB1 deflected by the polygon mirror PM onto the irradiated surface of the substrate FS. Further, at least the reflection members (reflection mirrors M11 to M15) and the polarization beam splitter BS function as an optical path deflection member that bends the optical path of the beam LB1 from the reflection mirror M10 to the substrate FS. By this optical path deflection member, the incident axis of the beam LB1 incident on the reflection mirror M10 and the irradiation center axis Le1 can be made substantially coaxial. With respect to the XtZt plane, the beam LB1 passing through the scanning unit MD1 passes through a substantially U-shaped or U-shaped optical path, and then travels in the −Zt direction and is projected onto the substrate FS.

In this way, with the substrate FS sub-scanned (conveyed) in the sub-scanning direction (+ X direction), each scanning unit MDn (MD1 to MD6) mainly uses the spot light SP of the beam LBn (LB1 to LB6). By performing a one-dimensional main scan in the scanning direction (Y direction), the spot light SP can be two-dimensionally scanned relative to the irradiated surface of the substrate FS. Therefore, a predetermined pattern can be drawn and exposed in the exposure region W of the substrate FS. Although the drawing optical elements AOMn (AOM1 to AOM6) are provided in the optical introduction optical system BDUn (BDU1 to BDU6), they may be provided in the scanning unit MDn (MD1 to MD6). In this case, it is preferable to provide a drawing optical element AOMn (AOM1 to AOM6) between the reflection mirror M10 and the reflection mirror M14 in the scanning unit MDn (MD1 to MD6).

As an example, the spot light SP is drawn by 1/2 of the spot light SP having an effective size φ of 3 μm, that is, by 1.5 (= 3 × 1/2) μm, while overlapping the drawing line SLn ( When irradiating the irradiated surface of the substrate FS along SL1 to SL6), the pulsed spot light SP is irradiated at intervals of 1.5 μm. Then, assuming that the effective length of the drawing lines SLn (SL1 to SL6) is 30 mm, the number of spot light SPs irradiated in one scan is 20000 (= 30 [mm] /1.5 [μm]]. ). Further, assuming that the feed rate (conveyance speed) Vt in the sub-scanning direction of the substrate FS is 2.419 mm / sec and the spot light SP is scanned in the sub-scanning direction at intervals of 1.5 μm, the drawing line SLn The time difference Tpx between the time of one scanning start (drawing start) and the time of the next scanning start along the above is about 620 μsec (≈1.5 [μm] /2.419 [mm / sec]). This time difference Tpx is the time during which the polygon mirror PM of the eight reflecting surface RP rotates by the angle β (β = 45 degrees = 360 degrees / 8) for one surface. In this case, since the time for one rotation of the polygon mirror PM needs to be set to about 4.96 msec (= 8 × 620 [μsec]), the rotation speed Vp of the polygon mirror PM is about 201 per second. It is set to .613 rpm (= 1 / 4.96 [msec]), that is, about 12096.88 rpm.

Assuming that the rotation angle range in which the spot light SP can actually be scanned while the polygon mirror PM rotates by an angle β for one reflecting surface RP is α (α <β), the scanning efficiency for one reflecting surface RP Can be represented by α / β. In the present embodiment, since the polygon mirror PM has a regular octagonal shape having eight reflecting surface RPs, the angle β is 45 degrees, and the scanning efficiency is represented by α / 45 degrees. The rotation angle range α that contributes to this actual scanning is the rotation angle range of the polygon mirror PM that allows the fθ lens FT to incident the beam LB1 reflected by the reflection surface of the polygon mirror PM and project it toward the substrate FS. is there. That is, the reflection surface (hereinafter, may be referred to as a deflection reflection surface) RP of the polygon mirror PM that reflects the beam LB1 emitted from the reflection mirror M14 toward the fθ lens FT is the rotation angle range (predetermined angle range) α. When rotating inside, the beam LB reflected by the deflection reflection surface RP is incident on the fθ lens FT and projected onto the substrate FS. This rotation angle range α is approximately determined by the focal length, aperture, position, and the like of the fθ lens FT. The larger the rotation angle range α, the longer the maximum scanning length of the drawing line SLn.

In the present embodiment, the rotation angle range α that contributes to the actual scanning is set to 15 degrees, so that the scanning efficiency is 1/3 (= 15 degrees / 45 degrees). Therefore, the time Ts required to scan the spot light SP by the maximum scanning length (for example, 31 mm) of the drawing line SLn is Ts = Tpx × scanning efficiency, and in the case of the above numerical example, the time Ts, Approximately 206.666 ... μsec (= 620 [μsec] / 3). Since the effective scanning length of the drawing lines SLn (SL1 to SL6) in the present embodiment is 30 mm, the scanning time Tsp of one scan of the spot light SP along the drawing lines SLn is about 200 μsec (≈206. 666 ... [μsec] x 30 [mm] / 31 [mm]). Therefore, since it is necessary to irradiate 20000 spot light SP (pulse light) during this scanning time Tsp, the emission frequency (oscillation frequency) Fe of the beam LB from the light source device 14 is Fe ≈ 20000 times / 200 μsec. = 100 MHz. The maximum incident angle at which the beam LB1 reflected by the 1 reflecting surface RP of the polygon mirror PM is effectively incident on the fθ lens FT is 30 degrees (centered on the optical axis AXf of the fθ lens FT), which is twice the rotation angle range α. As ± 15 degrees).

The photodetector DT shown in FIG. 6 has a photoelectric conversion element that photoelectrically converts the incident light. A predetermined reference pattern is formed on the surface of the rotating drum DR, for example, as disclosed in Pamphlet No. 2014/034161. The portion on the rotating drum DR on which this reference pattern is formed is made of a material having a low reflectance (10 to 50%) with respect to the wavelength region of the beam LB1. The other portion on the rotating drum DR on which the reference pattern is not formed is composed of a material having a reflectance of 10% or less with respect to the wavelength region of the beam LB1 or a material that absorbs light. Therefore, when the spot light SP of the beam LB1 is irradiated from the scanning unit MD1 to the region where the reference pattern of the rotating drum DR is formed in the state where the substrate FS is not wound (or the state through the transparent portion of the substrate FS), The reflected light is cylindrical lens CYb, reflective mirror M15, fθ lens FT, polygon mirror PM, reflective mirror M14, cylindrical lens CYa, λ / 4 wavelength plate QW, reflective mirror M13, field aperture FA, deflection adjustment optical member DP, It passes through the image shift optical member SR and the reflection mirror M12 and is incident on the polarizing beam splitter BS. Here, a λ / 4 wave plate QW is provided between the polarizing beam splitter BS and the substrate FS, specifically, between the reflection mirror M13 and the cylindrical lens CYa. As a result, the beam LB1 irradiated to the substrate FS is converted from the P-polarized light to the circularly polarized beam LB1 by the λ / 4 wave plate QW, and the reflected light incident on the polarized beam splitter BS from the substrate FS is λ /. Circularly polarized light is converted to S-polarized light by the 4-wave plate QW. Therefore, the reflected light from the substrate FS passes through the polarizing beam splitter BS and enters the photodetector DT via the optical lens G10.

At this time, the rotating drum DR is rotated and scanned while the drawing optical element AOM1 of the light introduction optical system BDU1 is continuously turned on, that is, the pulsed beam LB1 is continuously incident on the scanning unit MD1. When the unit MD1 mainly scans the spot light SP, the outer peripheral surface of the rotating drum DR is two-dimensionally irradiated with the spot light SP. Therefore, the image of the reference pattern formed on the rotating drum DR can be acquired by the photodetector DT. Specifically, the control device 18 uses a clock pulse signal (a clock having an oscillation frequency Fe created in the light source device 14) for pulse emission of the spot light SP to change the intensity of the photoelectric signal output from the light detector DT. One-dimensional image data in the Yt direction is acquired by digital sampling in response to the pulse signal CK). The control device 18 acquires this one-dimensional image data for each scan of the spot light SP. Further, under the control of the control device 18, the sub-scanning direction is constant in response to the count values CD2 based on the encoders EN2a and EN2b that measure the rotation angle position of the rotating drum DR on the installation azimuth line Lx2 where the drawing line SL1 is arranged. It is possible to generate two-dimensional image information on the surface of the rotating drum DR by arranging and acquiring one-dimensional image data in the Yt direction for each distance (for example, 1/2 of the size φ of the spot light SP) in the Xt direction. it can. The control device 18 measures the inclination of the drawing line SL1 of the scanning unit MD1 based on the two-dimensional image information of the acquired reference pattern of the rotating drum DR. The inclination of the drawing line SL1 may be a relative inclination between the scanning units MDn (MD1 to MD6), or an inclination (absolute inclination) with respect to the central axis AXo of the rotating drum DR. .. Needless to say, the inclination of each drawing line SL2 to SL6 can be measured in the same manner.

Reference numeral OP1 in FIG. 6 is an origin sensor that generates a pulsed origin signal SZ. The origin sensor OP1 generates a pulse-shaped origin signal SZ1 indicating the timing at which scanning of the spot light SP can be started by each reflecting surface RP of the polygon mirror PM. The origin sensor OP1 generates the origin signal SZ1 when the rotation position of the polygon mirror PM reaches a predetermined position where scanning of the spot light SP by the reflecting surface RP can be started. The origin sensor OP1 generates an origin signal SZ1 by using a deflecting reflection surface RP that reflects the beam LB1 emitted from the reflection mirror M14 toward the fθ lens FT. Therefore, the origin sensor OP1 generates the origin signal SZ1 when the rotation angle position of the deflection reflection surface RP for scanning the spot light SP becomes a predetermined rotation angle position in a plane parallel to the XtYt plane. Specifically, this predetermined rotation angle position is the rotation angle position of the deflection reflection surface RP at the timing when the rotation angle position of the deflection reflection surface RP that scans the spot light SP enters the rotation angle range (predetermined angle range) α. That is. Therefore, the origin sensor OP1 generates the origin signal SZ1 at the timing when the deflection reflection surface RP of the rotating polygon mirror PM enters the rotation angle range α. Since the polygon mirror PM has eight reflecting surface RPs, the origin sensor OP1 outputs the origin signal SZ1 eight times during the period in which the polygon mirror PM makes one rotation.

The origin sensor OP1 includes a beam transmission system opa that emits measurement light (laser beam) in a wavelength range that is non-photosensitive to the photosensitive functional layer of the substrate FS onto the reflection surface RP that is the deflection reflection surface RP. It has a beam light receiving system opb that receives the reflected light of the measurement light reflected by the reflecting surface RP and generates the origin signal SZ1. Although not shown, the beam transmission system opa has a light source that emits measurement light and an optical member (reflection mirror, lens, etc.) that projects the measurement light emitted by the light source onto the reflection surface RP. Although not shown, the beam light receiving system opb includes a light receiving unit including a photoelectric conversion element that receives reflected light and converts it into an electric signal, and an optical member (reflection mirror or) that guides the reflected light reflected by the reflecting surface RP to the light receiving unit. It has a lens, etc.). The beam transmitting system opa and the beam receiving system opb are measurements emitted by the beam transmitting system opa when the rotation position of the polygon mirror PM reaches a predetermined position where scanning of the spot light SP by the reflecting surface RP can be started. It is provided at a position where the beam receiving system opb can receive the reflected light of the light.

The control device 18 is based on the origin signal SZn (SZ1 to SZ6) generated by the origin sensors OPn (OP1 to OP6) provided in each scanning unit MDn (MD1 to MD6), and each scanning unit MDn (MD1 to MD6). The scanning (drawing) start timing of the spot light SP is determined. Specifically, the control device 18 takes a predetermined delay time (offset time) Tdn (Td1 to Td6) from the timing when the origin sensor OPn (OP1 to OP6) generates the origin signal SZn (SZ1 to SZ6). The driving of the drawing optical elements AOMn (AOM1 to AOM6) based on the serial data DLn (DL1 to DL6) is started. As a result, the drawing of the spot light SP (scanning of the spot light SP and its intensity modulation) by each scanning unit MDn (MD1 to MD6) has elapsed a delay time Tdn (Td1 to Td6) from the generation of the origin signal SZn (SZ1 to SZ6). Will be started later. For example, when the control device 18 starts driving the drawing optical element AOM1 based on the serial data DL1 after the delay time Td1 elapses from the timing when the origin signal SZ1 is generated, the scanning unit MD1 moves the spot along the drawing line SL1. Start drawing the optical SP.

The control device 18 changes the delay time Tdn (Td1 to Td6) from the generation of the origin signal SZn (SZ1 to SZ6) to the start of drawing the spot light SP by the scanning units MDn (MD1 to MD6). , The position of the drawing line SLn (SLn1 to SL6) on the substrate FS can be shifted in the main scanning direction (Y direction). For example, when the delay time Tdn (Td1 to Td6) is shortened, the drawing line SLn (SL1 to SL6) shifts in the direction opposite to the main scanning direction, and when the delay time Tdn (Td1 to Td6) is lengthened, the drawing line SLn (SLn1 to SL6) is shifted. SL1 to SL6) shift to the main scanning direction side. The control device 18 determines the delay time Tdn (Td1 to Td6) so that, for example, the center position of the drawing lines SLn (SL1 to SL6) having a length of 30 mm becomes the center position of the maximum scanning length of 31 mm. When shifting the drawing lines SLn (SL1 to SL6), the delay time Tdn (Td1 to Td6) is determined according to the shift amount. The control device 18 has, for example, the mark position information of the mark MKm (MK1 to MK4) on the substrate FS detected based on the image pickup signal by the alignment microscope ALGm (ALG1 to ALG) and the count value CD1 based on the encoders EN1a and EN1b. Is used to determine whether or not to shift the drawing line SL1, and if so, the shift amount. For example, if the shape of the exposure region W is deformed (distorted) based on the positions of the detected marks MKm (MK1 to MK4), a pattern for drawing and exposing the exposure region W according to the shape is also available. It needs to be transformed. Therefore, the drawing line SL1 is rotated around the irradiation center axis Le1 and the drawing line SL1 is shifted in the main scanning direction.

FIG. 7 is a configuration diagram showing the configurations of the encoder counters ECN1 to ECN3 and the drawing counters SCN2 and SCN3. As outlined above, the count values CD1 to CD3 counted by the encoder counters ECN1 to ECN3 and the count values CD1 to CD3 The count values CW2 and CW3 counted by the drawing counters SCN2 and SCN3 are output to the control device 18. The encoder counters ECN1 to ECN3 have the same configuration and function as each other, and the drawing counters SCN2 and SCN3 also have the same configuration and function as each other.

The encoder counter ECN1 individually counts each of the detection signals detected by the encoders EN1a and EN1b. Each of the encoders ENja and ENjb includes an origin detection sensor unit (Z-phase sensor) for detecting the origin mark (origin pattern) ZZ shown in FIG. 2 formed in a part of the scale units SDa and SDb in the circumferential direction. .. In FIG. 2, the origin mark (origin pattern) ZZ is schematically shown on the side surface portions of the scale portions SDa and SDb, but in reality, the scales (lattices) of the scale portions SDa and SDb are formed in the circumferential direction of the scale surface. It is annexed to one place. When the encoders EN1a and EN1b detect the origin mark (origin pattern) ZZ, the encoder counter ECN1 responds to the origin pulse signal (Z phase signal) Zss from the Z phase sensor and counts the count values corresponding to the encoders EN1a and EN1b. Is reset to the initial value (for example, 0). The encoder counter ECN1 controls one of the count value based on the detection signal (two-phase signal) of the encoder EN1a and the count value based on the detection signal (two-phase signal) of the encoder EN1b, or the average value of both as the count value CD1. Output to device 18. Therefore, the encoder counter ECN1 increments the count value CD1 according to the rotation of the rotary drum DR, and increments the count value CD1 for each rotation of the rotary drum DR (the moment when the origin mark ZZ passes through the encoders EN1a and EN1b). It is a counter circuit that resets to an initial value (for example, 0). The count value CD1 indicates the rotation angle position of the rotation drum DR as seen from the installation azimuth line Lx1, and indicates the rotation angle position where the rotation angle position of the origin mark ZZ is a predetermined position (for example, 0 degree). In principle, the count value based on the encoder EN1a and the count value based on the encoder EN1b are the same as each other, except when the rotating drum DR is eccentrically rotating with respect to the central axis AXo due to a manufacturing error of the rotating drum DR or the like. It becomes.

The encoder counter (first counting unit) ECN2 individually counts each of the detection signals detected by the encoders EN2a and EN2b. When the encoders EN2a and EN2b detect the origin mark ZZ formed in a part of the scale portions SDa and SDb in the circumferential direction by the Z-phase sensor, the encoder counter ECN2 responds to the Z-phase signal Zss and the encoders EN2a and EN2b. The count value corresponding to is reset to the initial value (for example, 0). The encoder counter ECN2 controls one of the count value based on the detection signal (two-phase signal) of the encoder EN2a and the count value based on the detection signal (two-phase signal) of the encoder EN2b, or the average value of both as the count value CD2. Output to device 18. Therefore, the encoder counter ECN2 is a counter circuit that increments the count value CD2 according to the rotation of the rotating drum DR and resets the count value CD2 to the initial value (for example, 0) for each rotation of the rotating drum DR. .. The encoder counter ECN2 also outputs the count value CD2 to the drawing counter SCN2. The count value CD2 indicates the rotation angle position of the rotation drum DR as seen from the installation azimuth line Lx2, and indicates the rotation angle position where the rotation angle position of the origin mark ZZ is a predetermined position (for example, 0 degree). In principle, the count value based on the encoder EN2a and the count value based on the encoder EN2b are the same as each other, except when the rotating drum DR is eccentrically rotating with respect to the central axis AXo due to a manufacturing error of the rotating drum DR or the like. It becomes.

Similarly, the encoder counter (first counting unit) ECN3 individually counts each of the detection signals detected by the encoders EN3a and EN3b. When the encoders EN3a and EN3b detect the origin mark ZZ of the scale units SDa and SDb with the Z-phase sensor, the encoder counter ECN3 sets the count value corresponding to the encoders EN3a and EN3b as an initial value (in response to the Z-phase signal Zss). For example, reset to 0). The encoder counter ECN3 controls one of the count value based on the detection signal (two-phase signal) of the encoder EN3a and the count value based on the detection signal (two-phase signal) of the encoder EN3b, or the average value of both as the count value CD3. Output to device 18. Therefore, the encoder counter ECN3 is a counter circuit that increments the count value CD3 according to the rotation of the rotating drum DR and resets the count value CD3 to the initial value (for example, 0) for each rotation of the rotating drum DR. .. The encoder counter ECN3 also outputs the count value CD3 to the drawing counter SCN3. The count value CD3 indicates the rotation angle position of the rotation drum DR as seen from the installation azimuth line Lx3, and indicates the rotation angle position where the rotation angle position of the origin mark ZZ is a predetermined position (for example, 0 degree). In principle, the count value based on the encoder EN3a and the count value based on the encoder EN3b are the same, except when the rotating drum DR is eccentrically rotating with respect to the central axis AXo due to a manufacturing error of the rotating drum DR or the like. It becomes.

As described above, each of the encoder counters ECN1 to ECN3 is reset to zero in response to the Z-phase signal Zss. However, it also depends on the fact that it is created corresponding to one rotation of the scale unit SDa (SDb). When controlling the mechanism unit to obtain the position of the substrate FS in the moving direction with high accuracy and not to reduce the positioning accuracy during pattern exposure, it is based on the count value (moving position, moving amount) corrected by the correction map. Therefore, it is preferable to determine various control timings.

In the present embodiment, the total circumference of the outer circumference (one circumference) of the rotating drum DR is shorter than the length of the exposure region W in the long direction. Therefore, in the encoder counters ECN1 to ECN3, the count range (first count range) corresponding to one rotation of the rotary drum DR is smaller than the count range corresponding to the length of the exposure region W in the long direction. The control device 18 measures the transfer speed (rotational speed of the rotating drum DR) Vt of the substrate FS and controls the rotation of the rotating drum DR by using the count values CD1 to CD3 of the encoder counters ECN1 to ECN3.

The drawing counter (second counting unit) SCN2 individually counts each of the detection signals from the encoders EN2a and EN2b. The drawing counter SCN2 outputs one of the count value based on the detection signal of the encoder EN2a and the count value based on the detection signal of the encoder EN2b, or the average value of both, to the control device 18 as the count value CW2. That is, the drawing counter SCN2 increments the count value CW2 according to the rotation of the rotating drum DR. When the preset signal Rs2 is sent from the control device 18, the drawing counter SCN2 rewrites the count value CW2 counted up to that point to the count value CD2 counted by the encoder counter ECN2. That is, the count value CD2 (predetermined value) is preset in the drawing counter SCN2.

Similarly, the drawing counter (second counting unit) SCN3 also counts each of the detection signals detected by the encoders EN3a and EN3b individually. The drawing counter SCN3 outputs the average value of one or both of the count value based on the detection signal of the encoder EN3a and the count value based on the detection signal of the encoder EN3b to the control device 18 as the count value CW3. That is, the drawing counter SCN3 increments the count value CW3 according to the rotation of the rotating drum DR. When the preset signal Rs3 is sent from the control device 18, the drawing counter SCN3 rewrites the count value CW3 counted up to that point to the count value CD3 counted by the encoder counter ECN3. That is, the count value CD3 (predetermined value) is preset in the drawing counter SCN3.

The count range (second count range) counted by the drawing counters SCN2 and SCN3 is larger than the count range (first count range) counted by the encoder counters ECN2 and ECN3, and is the length of the exposure area W in the long direction. It is set to be larger than the count range (third count range) corresponding to. Specifically, the count range (second count range) counted by the drawing counters SCN2 and SCN3 is at least a scale corresponding to the length of the exposure area W in the long direction (scale portion SDa, SDb scale). ) And the count range (first count range) in which the encoder counters ECN2 and ECN3 count the scale for one round of the scale units SDa and SDb. .. Therefore, the number of counting bits of the drawing counters SCN2 and SCN3 is set so as to correspond to a count range sufficiently larger than that of the encoder counters ECN2 and ECN3.

FIG. 8 is a functional block diagram showing an electrical schematic configuration of the exposure apparatus EX. The control device 18 includes a mark position detection unit 30, an exposure start / end position determination unit 32, an exposure control unit 34, a design information storage unit (storage unit) 36, and a correction data storage unit (storage unit) 38. Even when the substrate FS is transported to the rotary drum DR in a distorted state, or even when the substrate FS is not distorted, it is subjected to heat treatment in the manufacturing process of the device manufacturing system 10. The exposure region W may be distorted, but in the following description, it is assumed that the exposure region W is not deformed (not distorted) unless otherwise specified. In the state where the exposure region W is not deformed (not distorted), the exposure region W has a rectangular shape as shown in FIGS. 3 and 5. In the following description, first, a case where drawing data is read out and pattern drawing is performed based on the count value CD2 (CD3) of the encoder counter ECN2 (ECN3) will be described.

The mark position detection unit 30 analyzes the image of the image pickup signal captured by the plurality of alignment microscopes ALGm (ALG1 to ALG4), and is based on the count value CD1 at the moment when the alignment microscope ALGm (ALG1 to ALG4) captures the image. Therefore, the mark position information of the marks MK1 to MK4 on the substrate FS (information regarding the arrangement state of the marks MK1 to MK4) is detected with high accuracy. The mark position detection unit 30 outputs the detected mark position information (including the count value CD1) to the exposure start / end position determination unit 32 and the exposure control unit 34.

The exposure start / end position determination unit 32 determines the start position and end position of the drawing exposure of the exposure region W in the long direction of the substrate FS based on the mark position information of the marks MK1 to MK4 detected by the mark position detection unit 30. To determine. Specifically, the exposure start / end position determination unit 32 draws and exposes the exposure region W in the long direction of the substrate FS on the installation azimuth line Lx1 based on the mark position information detected by the mark position detection unit 30. It is determined whether or not the start position of is reached, and if it is determined that the start position has been reached, the count value CD1 of the encoder counter ECN1 at that time is determined as the start position SPD. Further, the exposure start / end position determination unit 32 determines the end position of the drawing exposure of the exposure region W in the long direction of the substrate FS on the installation azimuth line Lx1 based on the mark position information detected by the mark position detection unit 30. Is determined, and if it is determined that the signal has been reached, the count value CD1 of the encoder counter ECN1 at that time is determined as the end position EPD. The lengths of the exposure region W and the gap CLE in the long direction of the substrate FS are predetermined.

When the count value CD2 of the encoder counter ECN2 becomes the same value as the start position SPD, the exposure start / end position determination unit 32 sets the start position of the drawing exposure in the exposure area W to the installation azimuth line Lx2 (drawing lines SL1, SL3, SL5). It is determined that the upper position has been reached, and the start signal SS135 for starting the drawing exposure of the pattern by the scanning units MD1, MD3, and MD5 is output to the exposure control unit 34. Further, when the count value CD3 of the encoder counter ECN3 becomes the same value as the start position SPD, the exposure start / end position determination unit 32 sets the start position of the drawing exposure in the exposure area W to the installation azimuth line Lx3 (drawing lines SL2, SL4, It is determined that the position is on SL5), and the start signal SS246 for starting the drawing exposure of the pattern by the scanning units MD2, MD4, and MD6 is output to the exposure control unit 34.

When the count value CD2 of the encoder counter ECN2 becomes the same value as the end position EPD, the exposure start / end position determination unit 32 determines that the end position of the drawing exposure in the exposure area W has reached the installation azimuth line Lx2 and scans. The end signal ES135 for ending the drawing exposure of the pattern by the units MD1, MD3, and MD5 is output to the exposure control unit 34. Further, the exposure start / end position determination unit 32 determines that the end position of the drawing exposure in the exposure area W has reached the installation azimuth line Lx3 when the count value CD3 of the encoder counter ECN3 becomes the same value as the end position EPD. , The end signal ES246 that ends the drawing exposure of the pattern by the scanning units MD2, MD4, and MD6 is output to the exposure control unit 34.

The exposure control unit (control unit) 34 outputs the preset signals Rs2 and Rs3 to the drawing counters SCN2 and SCN3 after a lapse of a certain period of time after receiving the end signals ES135 and ES246. This fixed time is shorter than the time from when the exposure control unit 34 receives the end signals ES135 and ES246 to when the next start signals SS135 and SS246 are received. Specifically, the exposure control unit 34 draws preset signals Rs2 and Rs3 when the count values CD2 and CD3 of the encoder counters ECN2 and ECN3 are incremented by a predetermined value after receiving the end signals ES135 and ES246. Output to the counters SCN2 and SCN3.

By doing so, in the exposure control unit 34, after the end position of the drawing exposure of the exposure area W passes on the installation directional line Lx2, the start position of the drawing exposure of the next exposure area W is the installation directional line Lx2. The preset signal Rs2 can be output before passing over. That is, the preset signal Rs2 is output when the gap CLE between the exposure region W and the exposure region W is on the installation direction line Lx2. Similarly, in the exposure control unit 34, from the end position of the drawing exposure of the exposure area W passing on the installation azimuth line Lx3 until the start position of the drawing exposure of the next exposure area W passes the installation azimuth line Lx3. The preset signal Rs3 can be output during. That is, the preset signal Rs3 is output when the gap CLE between the exposure region W and the exposure region W is on the installation direction line Lx3.

FIG. 9 is a time chart showing the relationship between the substrate FS supported and conveyed by the rotating rotating drum DR, the count value CD2, the count value CW2, and the preset signal Rs2. A plurality of exposure regions W are arranged on the substrate FS with a predetermined gap (interval) CLE along the long direction. In order to distinguish the plurality of exposure regions W, for convenience, each exposure region W is represented by W1, W2, W3, ... From the leftmost exposure region W in FIG. 9 toward the right side. In FIG. 9, it is assumed that the substrate FS is conveyed from right to left. As described above, the encoder counter ECN2 increments the count value CD2 based on the detection signals of the encoders EN2a and EN2b, and when the origin mark ZZ is detected, the count value CD2 is set to the initial value (zero in FIG. 9). Reset to. Since the length of the exposure region W of the substrate FS in the long direction is longer than the length of the outer circumference (one circumference) of the rotating drum DR, the count value CD2 is 0 during the exposure operation of the exposure region W as shown in FIG. There is a state where it is reset to. Therefore, as will be described in detail later, it is correct if the exposure control unit 34 outputs the serial data DL1, DL3, DL5 of the column corresponding to the count value CD2 to the drawing optical elements AOM1, AOM3, AOM5. The serial data DL1, DL3, and DL5 cannot be output in order. Alternatively, the drawing data is stored during the exposure operation while adding (or subtracting) a constant value on the software (by arithmetic processing of the CPU) to the count value CD2 from zero after the encoder counter ECN2 is reset to zero. If the address count value of the memory unit in the design information storage unit 36 is set to continue, there is a possibility of delay due to addition (or subtraction) on the software, and the serial data DL1, DL3, DL5 are also correctly stored. It may not be possible to send. Therefore, the pattern drawn and exposed by the scanning units MD1, MD3, and MD5 is not the desired pattern. That is, the pattern drawn near the encoder counter ECN2 (ECN3) being zero-reset is disturbed, or the line width and dimensions of the pattern are disturbed with respect to the sub-scanning direction.

Therefore, in the present embodiment, the count value CW2 (CW3) of the drawing counter SCN2 (SCN3) provided separately from the encoder counter ECN2 (ECN3) is used to access the drawing data (address of the memory unit in the design information storage unit 36). Used for (designation). As described above, the count range that can be counted by the drawing counter SCN2 is at least a range corresponding to a length longer than the length of the exposure area W in the long direction by the outer circumference (one round) of the rotating drum DR. .. Then, when the drawing counter SCN2 receives the preset signal Rs2 sent from the exposure control unit 34 at the timing when the gap CLE between the exposure area W and the exposure area W reaches the installation direction line Lx2, the encoder 2 at that time The configuration is such that the count value CD2 output from the counter ECN2 is preset. Therefore, as shown in FIG. 9, when the gap CLE between the exposure area W1 and the exposure area W2 is brought at the position of the installation azimuth line Lx2 (drawing lines SL1, SL3, SL5), the preset signal Rs2 is used for drawing. It is sent to the counter SCN2, and the drawing counter SCN2 reads the count value CD2 (Cn1) of the encoder counter ECN2 at that time and presets it as the count value CW2. Then, the drawing counter SCN2 increments the count value CW2 based on the detection signals (two-phase signals) of the encoders EN2a and EN2b. After that, when the gap CLE between the exposure area W2 and the exposure area W3 reaches the position of the installation azimuth line Lx2, the preset signal Rs2 is sent to the drawing counter SCN2, and the drawing counter SCN2 counts the encoder counter ECN2 at that time. The value CD2 (Cn2) is read and preset as the count value CW2.

As described above, the count value CW2 of the drawing counter SCN2 is not reset when the drawing lines SL1, SL3, and SL5 are located in the exposure area W, and the drawing lines SL1, SL3, and SL5 are from the exposure area W. The count value CW2 is reset in the off state. That is, the drawing counter SCN2 can count the scales of the scale units SDa and SDb in the entire range of one exposure area W without resetting the count value CW2 in the middle of the exposure area W. Therefore, the exposure control unit 34 uses the count value CW2 of the drawing counter SCN2 to display the columns of the serial data DL1, DL3, and DL5 output to the drawing optical elements AOM1, AOM3, and AOM5 in the design information storage unit 36. It is possible to access from the memory unit in the order of consecutive addresses for each fixed address without delay, and the serial data DL1, DL3, and DL5 can be output in the correct order without being missed.

The relationship between the substrate FS supported and conveyed by the rotating rotating drum DR, the count value CD3, the count value CW3, and the preset signal Rs3 is the same as that shown in FIG. 9, so description thereof will be omitted.

Further, the exposure control unit (control unit) 34 causes the scanning units MD1, MD3, and MD5 to draw a pattern during the period from the reception of the start signal SS135 to the reception of the end signal ES135. The exposure control unit 34 outputs the serial data DL1, DL3, DL5 of each column of the design information (drawing data) PD1, PD3, PD5 to the AOM drive circuit 50 that drives the drawing optical elements AOM1, AOM3, and AOM5. Then, the scanning units MD1, MD3, and MD5 are made to draw the pattern. Similarly, the exposure control unit 34 causes the scanning units MD2, MD4, and MD6 to draw a pattern during the period from the reception of the start signal SS246 to the reception of the end signal ES246. The exposure control unit 34 outputs the serial data DL2, DL4, DL6 of each column of the design information (drawing data) PD2, PD4, PD6 to the AOM drive circuit 50 that drives the drawing optical elements AOM2, AOM4, and AOM6. Then, the scanning units MD2, MD4, and MD6 are made to draw the pattern.

Specifically, the exposure control unit 34 selects the columns of the serial data DL1, DL3, and DL5 to be output from the design information PD1, PD3, and PD5 based on the count value CW2 of the drawing counter SCN2. Then, the exposure control unit 34 inputs the logical information of the pixels of the serial data DL1 of the column selected from the design information storage unit 36 after the delay time Td1 elapses after the origin sensor OP1 generates the origin signal SZ1. Is sequentially read from and output to the AOM drive circuit 50. Similarly, the exposure control unit 34 has the pixels of the serial data DL3 and DL5 of the column selected from the design information storage unit 36 after the delay times Td3 and Td5 have elapsed since the origin sensors OP3 and OP5 generated the origin signals SZ3 and SZ5. The logical information of is sequentially read from the pixel of the first line and output to the AOM drive circuit 50.

Similarly, the exposure control unit 34 selects the columns of the serial data DL2, DL4, and DL6 to be output from the design information PD2, PD4, and PD6 based on the count value CW3 of the drawing counter SCN3. Then, the exposure control unit 34 inputs the logical information of the pixels of the serial data DL2 of the column selected from the design information storage unit 36 after the delay time Td2 elapses after the origin sensor OP2 generates the origin signal SZ2. Is sequentially read from and output to the AOM drive circuit 50. Similarly, the exposure control unit 34 has the pixels of the serial data DL4 and DL6 of the column selected from the design information storage unit 36 after the delay times Td4 and Td6 have elapsed since the origin sensors OP4 and OP6 generated the origin signals SZ4 and SZ6. The logical information of is sequentially read from the pixel of the first line and output to the AOM drive circuit 50. The delay time Tdn (Td1 to Td6) is, in principle, a time set so that the center position of the scanning lines SLn (SL1 to SL6) becomes the center position of the maximum scanning length, and is stored in the design information storage unit 36. It is remembered.

For example, as for the selection of the column of the serial data DLn based on the count values CW2 and CW3 of the exposure control unit 34, for example, the count values CW2 and CW3 when the start signals SS135 and SS246 are received are set as the first column and the first column. The count values CW2 and CW3 of each column may be assigned based on the count values CW2 and CW3 of. Further, the count values CW2 and CW3 of each column may be assigned based on the preset count values CW2 and CW3. Of the design information PDn, the partial design information corresponding to the block Bb is repeatedly used for the number of blocks Bb, so the column to be read is selected in consideration of this as well. That is, as a general rule, as the count values CW2 and CW3 increase, the column of the selected serial data DLn also shifts sequentially toward the rear column, but when the partial design information corresponding to the block Bb is repeatedly used, After selecting and outputting the serial data Dn in the last column of the partial design information corresponding to the block Bb, the serial data DLn in the first column of the partial design information is selected and output again. By repeating such an operation, the partial design information corresponding to the block Bb is repeatedly used. That is, after the exposure control unit 34 selects and uses the partial design information corresponding to the block Ba according to the count values CW2 and CW3, the partial design information corresponding to the block Bb is selected by the number of the block Bb. Finally, the partial design information corresponding to the block Bc is selected and used.

When the substrate FS is irradiated with the spot light SP having a size φ of 3 μm overlapping in the main scanning direction by 1.5 μm, the substrate FS is also overlapped by 1.5 μm in the sub-scanning direction (conveying direction of the substrate FS). Is preferable. Therefore, in this case, the count values CW2 and CW3 corresponding to each row are deviated by the count values corresponding to the movement of 1.5 μm of the rotating drum DR (board FS). Further, in the case where the spot light SPs having a size φ of 3 μm are overlapped by 1.5 μm, and the pixel size is 3 μm, two spot light SPs per pixel correspond to each other in the main scanning direction. Therefore, the exposure control unit 34 transfers the logical information of the plurality of pixels of the output serial data DLn to the AOM drive circuit 50 at a cycle interval twice the emission cycle (1 / oscillation frequency Fe) of the beam LB (spot light SP). Output sequentially to. That is, the exposure control unit 34 outputs the logical information of the pixels according to the clock pulse signal CP obtained by dividing the clock pulse signal CK of the oscillation frequency Fe created in the light source device 14 by 1/2 times.

The AOM drive circuit 50 turns on / off the drive signal output to the drawing optical element AOM1 according to the logical information of each pixel of the serial data DL1 that is sequentially sent. Similarly, the AOM drive circuit 50 turns on / off the drive signal output to the drawing optical elements AOM2 to AOM6 according to the logical information of each pixel of the serial data DL2 to DL6 sent sequentially. As a result, each scanning unit MDn (MD1 to MD6) can perform drawing (scanning of the spot light SP and intensity modulation) along the drawing line SLn (SL1 to SL6).

In this way, the exposure control unit 34 can control the projection position of the spot light SP of the beam LBn in the long direction of the substrate FS based on the count values CW2 and CW3 of the drawing counters SCN2 and SCN3. Further, the exposure control unit 34 can control the projection position of the spot light SP of the beam LB in the main scanning direction based on the design information PDn.

The correction data storage unit 38 is used when the exposure region W is deformed. Hereinafter, it will be described assuming that the exposure region W is deformed. The correction data storage unit 38 stores a plurality of correction data for correcting the patterns in the block Ba, the block Bb, and the block Bc according to the deformation of the exposure region W assumed in advance. The correction data includes a plurality of correction data (second correction data) for correcting the pattern in the first block Ba and the last used block Bc that are not used repeatedly, and the pattern in the block Bb that is repeatedly used. It is composed of a plurality of correction data (first correction data) to be corrected. This correction data is preferably provided for each scanning unit MDn (MD1 to MD6), but is not limited thereto. The correction data includes at least the correction design information RPDn (RPD1 to RPD6) and the adjustment information PAn (PA1 to PA6). The correction data storage unit 38 has at least a correction design information storage unit 38a that stores the correction design information RPDn and an adjustment information storage unit 38b that stores the adjustment information PAn.

The correction design information storage unit 38a stores the correction design information RPDn (RPD1 to RPD6) for each scanning unit MDn (MD1 to MD6). The correction design information storage unit 38a sets the patterns in the block (second block) Ba, the block (first block) Bb, and the block (second block) Bc according to the deformation of the exposure area W assumed in advance. A plurality of correction design information RPDn obtained by correcting the partial design information which is the corresponding design information is stored. Specifically, the correction design information storage unit 38a stores a plurality of correction design information RPDn according to the presumed block Ba, block Bb, and deformation of the block Bc. FIG. 10A is a diagram showing an example of the shape type of the deformed block Ba, FIG. 10B is a diagram showing an example of the shape type of the deformed block Bb, and FIG. 10C is a diagram showing an example of the shape of the deformed block Bc. It is a figure which shows an example of the kind of. As shown in FIGS. 10A to 10C, the correction design information storage unit 38a stores the block Ba, the block Bb, and a plurality of correction design information LPDNs according to the deformation of the block Bc. This correction design information RPDn is composed of a plurality of columns of serial data DLn.

The adjustment information storage unit 38b stores adjustment information PAn (PA1 to PA6) for each scanning unit MDn (MD1 to MD6). The adjustment information storage unit 38b determines the projection position of the spot light SP of the beam LBn based on the correction design information RPDN corresponding to the patterns in the block Ba, the block Bb, and the block Bc according to the deformation of the exposure region W assumed in advance. A plurality of adjustment information PAns to be adjusted are stored. Specifically, the adjustment information storage unit 38b stores the block Ba, the block Bb, and a plurality of adjustment information PAns according to the deformation of the block Bc as shown in FIGS. 10A to 10C, which are assumed in advance. The adjustment information PAn is information (rotation angle) indicating a delay time Tdn'(Td1' to Td6') corresponding to the shift amount of the drawing line SLn and a rotation amount (rotation angle) for rotating the drawing line SLn around the irradiation center axis Len. Rotation amount information) is included. The adjustment information PAn stores the delay time Tdn'and the rotation amount information in each drawing line SLn where the spot light SP of the beam LBn is drawn by the serial data DLn of each column. The adjustment information PAn may also include magnification information that defines the magnification of the drawing line SLn.

When the exposure control unit 34 determines that the shape of the block B to be exposed is deformed (distorted) based on the mark position information on the substrate FS detected by the mark position detection unit 30, the mark position is determined. Based on the information, the correction design information RPDn (RPD1 to RPD6) and the adjustment information PAn (PA1 to PA6) corresponding to the deformation of the block B are selected. At this time, the exposure control unit 34 selects the correction design information RPDn corresponding to the block B having a shape that can be spliced with the shape of the previously exposed block B that has already been exposed. That is, the shape (deformed form) of the joint portion between the previous block (first block) B that has already been exposed and the block (second block) B that is newly exposed adjacent to the previous block B. ) Is similar to the correction design information RPDn and the adjustment information PAn. For example, when the previous block B that has already been exposed is block Ba1 (see FIG. 10A), the correction design information RPDn and the correction design information RPDN corresponding to the block Bb1 (see FIG. The adjustment information PAn (PA1 to PA6) is selected. Further, when the previously exposed block B is the block Bb4 (see FIG. 10B) and the next exposed block is the block Bc, the shape (deformed form) of the joint portion is similar to that of the block Bb4. The correction design information RPDn and the adjustment information PAn (PA1 to PA6) corresponding to Bc3 (see FIG. 10C) are selected.

The exposure control unit 34 uses the serial data DLn (DL1 to DL6) of each column of the selected correction design information RPDn (RPD1 to RPD6) as the delay time Tdn'(Td1') of the selected adjustment information PAn (PA1 to PA6). ~ Td6') is used to output to the AOM drive circuit 50. Specifically, the exposure control unit 34 selects and selects a column of serial data DLn to be output from the selected correction design information RPDn based on the count values CW2 and CW3 of the drawing counters SCN2 and SCN3. From the adjustment information PAn, the delay time Tdn'corresponding to the output serial data DLn column is selected. Then, the exposure control unit 34 outputs the serial data DLn of the selected column after the delay time Tdn'selected from the origin signal SZn (SZ1 to SZ6) generated by the origin sensor OPn. Further, in parallel with the output operation of the serial data DLn, the exposure control unit 34 selects the rotation amount information corresponding to the column of the serial data DLn to be output from the selected adjustment information PAn. The exposure control unit 34 drives and controls the actuator 52 based on the selected rotation amount information. As a result, the actuator 52 rotates the drawing line SLn (scanning unit MDn) around the irradiation central axis Len with a rotation amount (rotation angle) corresponding to the rotation amount information. By adjusting the output timing of the serial data DLn based on the delay time Tdn'included in the adjustment information PAn and rotating the drawing line SLn based on the rotation amount information included in the adjustment information PAn, the beam LBn based on the correction design information RPDn The projection position of the spot light SP is adjusted. Thereby, the pattern exposed to the block B can be corrected according to the deformed shape of the block B.

The exposure control unit 34 is in the divided block B even when the transfer of the substrate FS is temporarily stopped due to a trouble in the entire device manufacturing system 10 or a trouble in the exposure device EX and the drawing exposure is interrupted. When the pattern of is being exposed, the transfer of the substrate FS and the drawing exposure are interrupted after the drawing exposure of the pattern of the block B currently being exposed is completed. After that, when resuming the exposure, the control device 18 conveys the substrate FS in the reverse direction (-X direction) and then again in the forward direction (+ X direction) to image the mark MKm on the alignment microscope ALGm. Let me. Then, the mark position detection unit 30 detects the mark position information based on the captured image and the count value CD1 of the encoder counter ECN1 at that time. Based on the detected mark position information, the exposure control unit 34 identifies the terminal position of the block B in which the drawing exposure was last performed, and starts the pattern of the next block B again from the specified position.
In this way, if the pattern to be exposed to the exposure area W is exposed in block B units, when it becomes necessary to stop the device and interrupt the exposure due to some trouble, the pattern of block B during exposure will be displayed. The exposure can be interrupted when the exposure is completed. Therefore, when the apparatus is restarted and the exposure operation is restarted, the pattern of the next block B may be exposed so as to be joined with the pattern of the block B that has already been exposed.

When the adjustment information PAn also includes the magnification information, the exposure control unit 34 may change the emission frequency Fe of the beam LB emitted by the light source device 14 according to the drawing magnification. That is, if it is desired to reduce the drawing line SLn, the emission frequency Fe may be increased, and if it is desired to extend the drawing line SLn, the emission frequency Fe may be decreased. Further, the exposure control unit 34 sets the emission interval of the beam LB (spot light SP) to be constant in principle, sets a plurality of change points discretely on the drawing line SLn according to the magnification information, and changes the spot light SP. The emission interval of the beam LB (spot light SP) may be changed only when passing through the point. That is, when the drawing line SLn is reduced, the light emission interval of the beam LB is shortened only when passing through the change point, and when the drawing line SLn is to be extended, the light emission interval of the beam LB is shortened only when passing through the change point. Should be lengthened.

Although the correction design information RPDn and the adjustment information PAn are used to correct the pattern exposed in the block B, either one may be used to correct the pattern. For example, when only the adjustment information PAn is used, the projection position of the spot light SP of the beam LBn based on the design information PDn is adjusted by the adjustment information PAn, and the pattern exposed in the block B is corrected. On the contrary, when only the correction design information RPDn is used, the pattern to be exposed in the block B is corrected by projecting the spot light SP of the beam LBn at the projection position based on the correction design information RPDn. Even when only the correction design information RPDn is used, the exposure control unit 34 calculates the adjustment information for adjusting the projection position based on the correction design information RPDn based on the mark position information of the detected mark MKm, and the calculated adjustment. The projection position may be adjusted using the information. Also in this case, the adjustment information to be calculated includes rotation amount information for rotating the drawing line SLn, delay time Tdn from the generation timing of the origin signal SZn to output of serial data DLn, magnification information, and the like.

Further, even when the exposure control unit 34 uses the correction design information RPDn and the adjustment information PAn, or even when only the adjustment information PAn is used, the exposure control unit 34 is the adjustment information storage unit 38b based on the mark position information of the detected mark MKm. The adjustment information PAn stored in may be corrected, and the projection position based on the design information PDn or the corrected design information RPDn may be adjusted by using the corrected adjustment information PAn.

As described above, the exposure control unit 34 of the encoder counters ECN2 and ECN3 before the processing unit (drawing optical element AOMn and scanning unit MDn) starts processing one exposure region W on the substrate FS. The count values CD2 and CD3 are preset in the drawing counters SCN2 and SCN3, and the processing by the processing unit is controlled based on the count values CW2 and CW3 of the drawing counters SCN2 and SCN3 after being preset. As a result, the drawing counters SCN2 and SCN3 count the scale in the entire range of one exposure area W without resetting or presetting the count values CD2 and CD3 during the processing of the exposure area W by the processing unit. Is possible. As a result, the processing unit can appropriately perform processing for forming the electronic device.

The processing unit projects a beam LBn (spot light SP) onto the exposure region W of the substrate FS in order to form a pattern for an electronic device, and the exposure control unit 34 receives count values CW2 of the drawing counters SCN2 and SCN3. Based on CW3, the projection position of the beam LBn (spot light SP) in the long direction of the substrate FS is controlled. This makes it possible to appropriately expose the desired pattern.

The exposure apparatus EX is composed of logical information in units of a plurality of pixels decomposed into two dimensions in a matrix, with the main scanning direction of the beam LBn (spot light SP) as the row direction and the moving direction of the substrate FS as a column. The design information storage unit 36 for storing the design information of the pattern is provided. The processing unit includes a scanning unit MDn that repeatedly scans the beam LBn (spot light SP) one-dimensionally along the width direction of the substrate FS, and a drawing optical element AOMn that modulates the intensity of the spot light SP based on design information. Has. The exposure control unit 34 selects a column of design information PDn (RPDn) according to the count values CW2 and CW3 of the drawing counters SCN2 and SCN3, and stores the columns for each of the plurality of pixels included in the selected columns. The design information storage unit 36 is controlled so that the logical information is sent to the drawing optical element AOMn. As a result, the desired pattern can be appropriately drawn and exposed.

The second counting range is set to be equal to or greater than the sum of at least the third counting range counted by the amount of movement of the scale corresponding to the length of one exposure region W in the long direction and the first counting range. Has been done. As a result, the drawing counters SCN2 and SCN3 cover the entire range of one exposure area W without resetting or presetting the count values CW2 and CW3 during the processing of the exposure area W by the processing unit (during the exposure operation). The scale can be reliably counted up. As a result, the processing unit can reliably perform processing for appropriately forming the electronic device.

When the exposure device EX divides the pattern for the electronic device to be formed in the exposure region W into a plurality of blocks B in the long direction, the exposure apparatus EX corresponds to a plurality of assumed deformation regions W in advance, and the block B A correction data storage unit 38 for storing a plurality of correction data for deforming a pattern exposed inside, and a mark detection unit for detecting information regarding an arrangement state of a plurality of marks MKm formed on the substrate FS (a mark detection unit 38). It includes an alignment microscope ALGm, encoders EN1a and EN1b, and a mark position detection unit 30). When the processing unit exposes the pattern for the electronic device to the substrate FS, the exposure control unit 34 is based on the information regarding the arrangement state from the plurality of correction data stored in the correction data storage unit 38 for each block B. The correction data is selected, and the processing unit is controlled so that the pattern exposed in the block B is deformed using the selected correction data. As a result, even if the exposure region W is deformed, the pattern to be exposed can be accurately corrected accordingly.

The correction data includes adjustment information PAn that adjusts the projection position of the beam LBn (spot light SP) based on the design information corresponding to the pattern in the block B according to the deformation form of the exposure region W expected in advance. The exposure control unit 34 adjusts the projection position based on the design information PDn corresponding to the pattern in the block B using the adjustment information PAn and projects the beam LBn (spot light SP) to expose the inside of the block B. Transform the pattern to be done. As a result, the projection position of the beam LBn (spot light SP) can be finely adjusted, and even if the exposure region W is deformed, the pattern to be exposed can be accurately corrected accordingly.

The correction data includes the correction design information RPDn in which the design information PDn corresponding to the pattern in the block B is corrected according to the deformation form of the exposure region W expected in advance. The exposure control unit 34 deforms the pattern exposed in the block B by projecting the beam LBn (spot light SP) at the projection position based on the correction design information RPDN. In this way, since the correction design information RPDN corresponding to the deformation of the exposure region W is used, even if the exposure region W is deformed, the pattern to be exposed can be accurately corrected accordingly.

The correction data includes the correction design information RPDn in which the design information PDn corresponding to the pattern in the block B is corrected according to the deformation form of the exposure region W expected in advance, and the beam LBn (spot light SP) based on the correction design information RPDN. ) Includes adjustment information PAn for adjusting the projection position. The exposure control unit 34 adjusts the projection position based on the correction design information RPDN by using the adjustment information PAn and projects the beam LBn (spot light SP) to deform the pattern exposed in the block B. As a result, even when the exposure region W is deformed, the pattern to be exposed can be corrected with high accuracy.

The exposure control unit 34 adjusts the projection position based on the correction design information RPDN by using the information on the arrangement state or the adjustment information PAn and the information on the arrangement state, and projects the beam LBn (spot light) to block it. The pattern exposed in B is deformed. As a result, even when the exposure region W is deformed, the pattern to be exposed can be corrected with high accuracy.

When the exposure control unit 34 exposes the second block B adjacent to the first block B that has already been exposed in the moving direction of the substrate FS, the exposure control unit 34 selects the first of the plurality of correction data. Correction data having a similar deformation form at the joint portion between the block B and the second block B is selected. Therefore, even if the exposure is performed in units of blocks B, the blocks B can be connected to each other, and even if the exposure region W is deformed, the pattern to be exposed can be accurately corrected accordingly.

The plurality of blocks B have a plurality of first blocks B that are repeatedly used and a second block B that is not repeatedly used, and the design information PDn exposes the first pattern to the first block B. It is composed of the first partial design information of the above and the second partial design information for exposing the second pattern to the second block B. As a result, the amount of data of the design information PDn can be suppressed. The plurality of correction data includes a plurality of first correction data for deforming the first pattern in the first block B and a second block B according to a plurality of expected deformation forms of the exposure region W in advance. It is composed of a plurality of second correction data for deforming the second pattern in. As a result, the pattern to be exposed can be corrected for each block B.

In the above embodiment, the length of the exposure region W of the substrate FS in the long direction is longer than the length of the outer circumference (one circumference) of the rotating drum DR, but the length of the exposure region W is rotational. It may be shorter than the outer circumference of the drum DR. FIG. 11 is a time chart showing the relationship between the substrate FS, the count value CD2, the count value CW2, and the preset signal Rs2 when the length of the exposure region W in the long direction is shorter than the outer circumference of the rotating drum DR. is there. In the example of FIG. 11, it is assumed that two exposure regions W are arranged in the width direction of the substrate FS, and the substrate FS is conveyed from right to left. Further, the length of the outer circumference (one circumference) of the rotating drum DR is longer than the length of one exposure area W in the long direction, and between the length of the two exposure areas W in the long direction and the two exposure areas W. It shall be shorter than the total length of the gap CLE in the long direction.

As described above, the encoder counter ECN2 increments the count value CD2 based on the detection signals of the encoders EN2a and EN2b, and when the origin mark ZZ is detected, the count value CD2 is reset to the initial value (zero in FIG. 11). Reset. Since the length of the exposure region W of the substrate FS in the long direction is shorter than the length of the outer circumference (one circumference) of the rotating drum DR, as shown in FIG. 11, the encoder counter ECN2 has a long exposure region W of at least one. Although it is possible to count the scale corresponding to the length in the direction, a situation occurs in which the count value CD2 is reset to zero in the middle of the exposure area W. The count range of the drawing counter SCN2 is a range corresponding to a length that is at least longer than the length of the exposure area W in the long direction by the outer circumference (one round) of the rotating drum DR. Therefore, the drawing counter SCN2 can count the scales of the scale units SDa and SDb over at least the first exposure region W and the second exposure region W. The relationship between the substrate FS, the count value CD3, the count value CW3, and the preset signal Rs3 is the same as that shown in FIG. 9, and the description thereof will be omitted.

Therefore, the exposure control unit 34 outputs the preset signal Rs2 to the drawing counter SCN2 every time two continuous exposure regions W pass a position on the installation directional line Lx2 along the long direction. That is, the exposure control unit 34 outputs the preset signal Rs2 each time the end signal ES135 is received twice. Similarly, the exposure control unit 34 outputs the preset signal Rs3 to the drawing counter SCN3 every time two continuous exposure regions W along the long direction pass the installation directional line Lx3. That is, the exposure control unit 34 outputs the preset signal Rs3 every time the end signal ES246 is received twice. The output timing of the preset signals Rs2 and Rs3 is after a lapse of a certain time from receiving the end signals ES135 and ES246 as described above.

In short, the exposure control unit 34 is provided with a gap CLE so that the drawing counters SCN2 and SCN3 are not reset (or preset) when the exposure area W is located on the installation direction lines Lx2 and Lx3. The preset signals Rs2 and Rs3 may be output to the drawing counters SCN2 and SCN3 at the timing of being located on the directional lines Lx2 and Lx3.

Further, in the above-described embodiment, the raster scan method is adopted, but the method is not limited to the raster scan method. In short, it is sufficient as long as it can correct the pattern to be exposed according to the deformation of the exposure region W, and the exposure apparatus Ex using a mask may be used. For example, instead of the exposure heads 16 (scanning units MD1 to MD6) shown in FIG. 1, a cylindrical mask DM that rotates in synchronization with the rotation of the rotating drum DR as disclosed in Japanese Patent Application Laid-Open No. 2015-145971 is used. A multi-lens type projection optical system PL (PL1 to PL6) having a projection magnification of 1x (x1) may be adopted for the image of the pattern formed on the cylindrical mask DM.

[Modification example]
The above embodiment may be modified as follows.

(Modification 1) In the above embodiment, the drawing counters SCN2 and SCN3 respond to the preset signals Rs2 and Rs3, and the count values CW2 and CW3 at that time are set to the count values CD2 of the encoder counters ECN2 and ECN3. It was decided to preset (update) to CD3, but in response to the preset signals Rs2 and Rs3, the count values CW2 and CW3 at that time are preset to predetermined values (for example, zero which is a constant value), and drawing for the exposure area W is performed. The amount of movement of the scales of the scale units SDa and SDb based on the detection signals (two-phase signals) of the encoders EN2 and EN3 may be started to be counted from the time when That is, for example, in the time chart shown in FIG. 9, when the position of each gap CLE (or the drawing start position of each exposure area Wn) on the substrate FS coincides with the position of the installation directional line Lx2 or the installation directional line Lx3. Therefore, the count values CW2 and CW3 of the drawing counters SCN2 and SCN3 may be incremented from a predetermined value (for example, zero which is a constant value).

(Modification 2) The encoder counters ECN1 to ECN3 that count the amount of movement of the scales of the scale units SDa and SDb based on the respective detection signals (two-phase signals) of the encoders EN1 to EN3 are of the scale unit SDa (SDb). Since the count value includes the eccentricity error, the pitch error of the scale, and the like, the count value is actually corrected by the correction map. FIG. 12 is a circuit block diagram showing a configuration in which a correction function based on a correction map is incorporated into the configuration of each counter for the encoder EN2 shown in FIG. 7. As shown in FIG. 12, the count value CD2 generated by the encoder counter ECN2 is corrected by the correction map circuit CMP and output to the control device 18 as the count value CD2'. Then, the corrected count value CD2'is applied as a preset value to the drawing counter SCN2. Therefore, the drawing counter SCN2 is preset with the count value CD2'at that time in response to the preset signal Rs2 from the control device 18, and the drawing counter SCN2 is incremented with the preset count value as the initial value. To start. In FIG. 7, the drawing counter SCN2 also digitally counts the amount of movement of the scale based on the detection signal (two-phase signal) from the encoder EN2. However, as shown in FIG. 12, the drawing counter SCN2 May be configured to increment the change (“0”, “1”) of the least significant bit LSB of the count value CD2 ′ output from the correction map circuit CMP. In this way, the count value CW2 counted by the drawing counter SCN2 also has the eccentricity error of the scale unit SDa (SDb) and the pitch error of the scale removed, and accurately reflects the moving position of the substrate FS. It becomes.

10 ... Device manufacturing system 12 ... Substrate transfer mechanism 14 ... Light source device 16 ... Exposure head 18 ... Control device 30 ... Mark position detection unit 32 ... Exposure start / end position determination unit 34 ... Exposure control unit 36 ... Design information storage unit 38 ... Correction data storage unit 38a ... Correction design information storage unit 38b ... Adjustment information storage unit 50 ... AOM drive circuit 52 ... Actuator ALGm (ALG1 to ALG4) ... Alignment microscope AOMn (AOM1 to AOM6) ... Optical element for drawing AXo ... Central axis AXp ... Rotating axis BDUn (BDU1 to BDU6) ... Optical introduction optical system CYa, CYb ... Cylindrical lens DR ... Rotating drum ECN (ECN1 to ECN3) ... Encoder counter ENja (EN1a to EN3a), ENjb (EN1b to EN3b) ... Encoder EX ... Exposure device FS ... Substrate FT ... fθ lens LB, LBn (LB1 to LB6) ... Beam Len (Le1 to Le6) ... Irradiation center axis Lx1 to Lx3 ... Installation azimuth line MDn (MD1 to MD6) ... Scanning unit MKm (MK1 to MK4) ) ... Mark OPn (OP1 to OP6) ... Origin sensor PM ... Polygon mirror RP ... Reflective surface SCN (SCN2, SCN3) ... Drawing counter SDa, SDb ... Scale part SLn (SL1 to SL6) ... Drawing line SP ... Spot light SZn (SZ1 to SZ6) ... Origin signal UB ... Body frame W ... Exposure area

Claims (7)

A pattern forming method in which a long flexible sheet substrate is moved in a long direction to form a pattern for an electronic device on the sheet substrate.
Projecting an energy beam based on design information for forming the pattern for the electronic device onto a partial region set on the sheet substrate, and
When the pattern for an electronic device to be formed on the sheet substrate is divided into a plurality of blocks in the elongated direction, the pattern should be formed in the blocks according to a plurality of deformation forms of the partial region assumed in advance. To store multiple correction data for deforming the pattern in the storage unit,
To detect information on the arrangement state of a plurality of marks formed on the sheet substrate, and
When projecting the energy beam onto the sheet substrate, the correction data corresponding to the information regarding the arrangement state was selected from the plurality of correction data stored in the storage unit for each block, and selected. Using the correction data, correction is performed so that the pattern to be formed in the block is deformed.
Pattern forming method including. The pattern forming method according to claim 1.
The correction data includes adjustment information for adjusting the projection position of the energy beam based on the design information corresponding to the pattern in the block according to the deformation form of the partial region expected in advance.
When the energy beam is projected onto the sheet substrate, the projection position based on the design information corresponding to the pattern in the block is adjusted by using the adjustment information, and the energy beam is projected. A pattern forming method for deforming the pattern to be formed in a block. The pattern forming method according to claim 1.
The correction data includes correction design information obtained by correcting the design information corresponding to the pattern in the block according to the deformation form of the partial region expected in advance.
A pattern forming method in which when the energy beam is projected onto the sheet substrate, the pattern to be formed in the block is deformed by adjusting the projection position of the energy beam based on the correction design information. The pattern forming method according to claim 1.
The correction data includes correction design information obtained by correcting the design information corresponding to the pattern in the block according to a deformation form of the partial region expected in advance, and projection of the energy beam based on the correction design information. Includes adjustment information to adjust the position
When the energy beam is projected onto the sheet substrate, the projection position based on the correction design information is adjusted by using the adjustment information and the energy beam is projected, so that the energy beam should be formed in the block. A pattern forming method that deforms a pattern. The pattern forming method according to claim 3 or 4.
The projection position based on the correction design information is adjusted by using only the information about the arrangement state or the adjustment information and the information about the arrangement state to project the energy beam, thereby forming the energy beam in the block. A pattern forming method for deforming the above-mentioned pattern. The pattern forming method according to any one of claims 1 to 5.
When forming a pattern for the second block adjacent to the first block for which the pattern has already been formed with respect to the moving direction of the sheet substrate, the first block is selected from the plurality of correction data. A pattern forming method for selecting the correction data having a similar deformation form at the joint portion between the second block and the second block. The pattern forming method according to any one of claims 1 to 6.
The plurality of blocks have a plurality of first blocks corresponding to the first pattern formed repeatedly, and a second block corresponding to the second pattern not repeatedly formed.
The design information includes a first partial design information for forming the first pattern in the first block and a second partial design information for forming the second pattern in the second block. ,
The plurality of correction data includes a plurality of first correction data for deforming the first pattern in the first block and the second correction data according to a plurality of deformation forms of the partial region assumed in advance. A pattern forming method including a plurality of second correction data for deforming the second pattern in a block.

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