JP2012220559A - Exposure method, exposure device, and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure method that suppresses occurrence of exposure failure by obtaining information on deformation of a substrate while suppressing degrading of throughput.SOLUTION: The method of exposing the substrate with exposure light includes obtaining information on deformation of a first part of an outer edge area including an end of the substrate, obtaining information on deformation of a second part of the outer edge area different from the first part on the basis of the obtained result and a prescribed relational expression, and exposing the substrate on the basis of the obtained information on the deformation of the first and second parts.

Description

  The present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method.

  In the manufacturing process of an electronic device such as a flat panel display, for example, an exposure apparatus that exposes a substrate with exposure light as disclosed in Patent Document 1 is used. The device is formed by stacking a plurality of patterns (patterned films) on a substrate. In the exposure process, when the image of the next pattern is superimposed on the pattern already formed on the substrate, the alignment mark of the substrate is measured, and based on the measurement result of the alignment mark, the substrate and the image of the next pattern are measured. An alignment process for performing alignment is executed.

JP 2001-215718 A

  In the exposure process, when the substrate is deformed, the pattern overlay accuracy is lowered, resulting in the occurrence of exposure failure and the generation of defective devices. Even when the substrate is deformed, it is effective to accurately acquire information related to the deformation of the substrate in order to suppress a decrease in the overlay accuracy of the pattern. When the deformation of the substrate includes a non-linear component (non-linear distortion), information regarding the deformation of the substrate including the non-linear distortion can be accurately acquired by increasing the number of measurement points of the alignment mark. However, when the number of measurement points of the alignment mark is increased, it takes time for the measurement, and the throughput may be reduced.

  An object of an aspect of the present invention is to provide an exposure method and an exposure apparatus that can accurately acquire information related to substrate deformation and suppress the occurrence of exposure failure while suppressing a decrease in throughput. Another object of the present invention is to provide a device manufacturing method capable of suppressing the occurrence of defective devices while suppressing a decrease in throughput.

  According to the first aspect of the present invention, there is provided an exposure method for exposing a substrate with exposure light, obtaining information relating to the deformation of the first portion of the outer edge region including the edge of the substrate, and the obtained result; Based on the predetermined relational expression, acquiring information related to the deformation of the second portion of the outer edge region different from the first portion, and exposing the substrate based on the acquired information related to the deformation of the first portion and the second portion. And an exposure method is provided.

  According to a second aspect of the present invention, there is provided a device manufacturing method comprising exposing a substrate using the exposure method of the first aspect and developing the exposed substrate.

  According to a third aspect of the present invention, there is provided an exposure apparatus that exposes a substrate with exposure light, wherein the first acquisition apparatus acquires information related to the deformation of the first portion of the outer edge region including the edge of the substrate; A second acquisition device that acquires information related to the deformation of the second portion of the outer edge region different from the first portion based on the result acquired by the acquisition device and a predetermined relational expression; An exposure apparatus that exposes a substrate based on information on deformation of the second portion is provided.

  According to a fourth aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure apparatus according to the third aspect and developing the exposed substrate.

  According to the aspect of the present invention, it is possible to suppress the occurrence of exposure failure while suppressing a decrease in throughput. Moreover, according to the aspect of the present invention, it is possible to suppress the occurrence of defective devices while suppressing a decrease in throughput.

It is a schematic block diagram which shows an example of the exposure apparatus which concerns on 1st Embodiment. It is a perspective view which shows an example of the exposure apparatus which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the relationship between the projection area | region of the projection system which concerns on 1st Embodiment, the detection area | region of an alignment system, and a board | substrate. It is a schematic diagram which shows an example of the deformation | transformation state of the board | substrate which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the board | substrate which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the board | substrate which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the board | substrate which concerns on 1st Embodiment. It is a flowchart which shows an example of the exposure method which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the 3rd, 4th edge | side of the board | substrate which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the 1st, 2nd edge of the board | substrate which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the internal area | region of the board | substrate which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the internal area | region of the board | substrate which concerns on 1st Embodiment. It is a flowchart which shows an example of the exposure method which concerns on 2nd Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the 3rd, 4th edge | side of the board | substrate which concerns on 2nd Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the 1st, 2nd edge of the board | substrate which concerns on 2nd Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the internal area | region of the board | substrate which concerns on 2nd Embodiment. It is a schematic diagram which shows an example of the deformation | transformation state of the internal area | region of the board | substrate which concerns on 2nd Embodiment. It is a flowchart which shows an example of the device manufacturing method which concerns on this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each part will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment will be described. FIG. 1 is a schematic block diagram showing an example of an exposure apparatus EX according to the first embodiment, and FIG. 2 is a perspective view. 1 and 2, an exposure apparatus EX includes a mask stage 1 that can move while holding a mask M, a substrate stage 2 that can move while holding a substrate P, and a drive system 3 that moves the mask stage 1. A driving system 4 that moves the substrate stage 2, an illumination system IS that illuminates the mask M with the exposure light EL, a projection system PS that projects an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P, A control device 5 that controls the operation of the entire exposure apparatus EX, and a storage device 5R that is connected to the control device 5 and stores various types of information related to exposure are provided.

  The mask M includes a reticle on which a device pattern projected onto the substrate P is formed. The substrate P includes, for example, a base material such as a glass plate and a photosensitive film (coated photosensitizer) formed on the base material. In the present embodiment, the outer shape of the substrate P is a rectangle. In the present embodiment, the substrate P includes a large glass plate, and the size of one side of the substrate P is, for example, 500 mm or more. In the present embodiment, a square glass plate having a side of about 3000 mm is used as the base material of the substrate P.

  The exposure apparatus EX of the present embodiment also includes an interferometer system 6 that measures position information of the mask stage 1 and the substrate stage 2, and a first detection that detects position information of the surface (lower surface, pattern formation surface) of the mask M. The system 7 includes a second detection system 8 that detects position information on the surface (exposure surface, photosensitive surface) of the substrate P, and an alignment system 9 that performs alignment mark measurement on the substrate P.

  Further, the exposure apparatus EX includes a body 13. The body 13 includes, for example, a base plate 10 disposed on a support surface (for example, floor surface) FL in a clean room via a vibration isolation table BL, a first column 11 disposed on the base plate 10, and a first column 11 And a second column 12 disposed on the surface. In the present embodiment, the body 13 supports each of the projection system PS, the mask stage 1 and the substrate stage 2. In the present embodiment, the projection system PS is supported by the first column 11 via the surface plate 14. The mask stage 1 is supported so as to be movable with respect to the second column 12. The substrate stage 2 is supported so as to be movable with respect to the base plate 10.

  In the present embodiment, the projection system PS has a plurality of projection optical systems. The illumination system IS has a plurality of illumination modules corresponding to a plurality of projection optical systems. Further, the exposure apparatus EX of the present embodiment projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus.

  In the present embodiment, the projection system PS has seven projection optical systems PL1 to PL7, and the illumination system IS has seven illumination modules IL1 to IL7. The number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have 11 projection optical systems, and the illumination system IS may have 11 illumination modules.

  The illumination system IS can irradiate the predetermined illumination areas IR1 to IR7 with the exposure light EL. The illumination areas IR1 to IR7 are included in the irradiation areas of the exposure light EL emitted from the illumination modules IL1 to IL7. In the present embodiment, the illumination system IS illuminates each of the seven different illumination areas IR1 to IR7 with the exposure light EL. The illumination system IS illuminates portions of the mask M arranged in the illumination areas IR1 to IR7 with the exposure light EL having a uniform illuminance distribution. In the present embodiment, for example, bright lines (g line, h line, i line) emitted from a mercury lamp are used as the exposure light EL emitted from the illumination system IS.

  The mask stage 1 is movable with respect to the illumination regions IR1 to IR7 while holding the mask M. The mask stage 1 includes a mask holding unit 15 that can hold the mask M. The mask holding unit 15 includes a chuck mechanism that can vacuum-suck the mask M, and holds the mask M in a releasable manner. In the present embodiment, the mask holding unit 15 holds the mask M so that the lower surface (pattern forming surface) of the mask M and the XY plane are substantially parallel. The drive system 3 includes, for example, a linear motor, and can move the mask stage 1 on the guide surface 12G of the second column 12. In the present embodiment, the mask stage 1 operates in the three directions of the X axis, the Y axis, and the θZ direction on the guide surface 12G in a state where the mask M is held by the mask holding unit 15 by the operation of the drive system 3. It is movable.

  The projection system PS can irradiate the exposure light EL to the predetermined projection areas PR1 to PR7. The projection areas PR1 to PR7 correspond to the irradiation areas of the exposure light EL emitted from the projection optical systems PL1 to PL7. In the present embodiment, the projection system PS projects a pattern image on each of seven different projection regions PR1 to PR7. The projection optical system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto the portion of the substrate P that is disposed in the projection regions PR1 to PR7.

  The substrate stage 2 is movable with respect to the projection regions PR1 to PR7 while holding the substrate P. The substrate stage 2 includes a substrate holding unit 16 that can hold the substrate P. The substrate holding unit 16 includes a chuck mechanism capable of vacuum-sucking the substrate P, and holds the substrate P so that the substrate P can be released. In the present embodiment, the substrate holding unit 16 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel. The drive system 4 includes, for example, a linear motor, and can move the substrate stage 2 on the guide surface 10 </ b> G of the base plate 10. In the present embodiment, the substrate stage 2 operates on the guide surface 10G with the X-axis, Y-axis, Z-axis, θX, θY, and It can move in six directions of θZ direction.

  The interferometer system 6 includes a laser interferometer unit 6A that measures position information of the mask stage 1 and a laser interferometer unit 6B that measures position information of the substrate stage 2. The laser interferometer unit 6 </ b> A can measure position information of the mask stage 1 using a measurement mirror 1 </ b> R disposed on the mask stage 1. The laser interferometer unit 6 </ b> B can measure the position information of the substrate stage 2 using the measurement mirror 2 </ b> R disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure position information of the mask stage 1 and the substrate stage 2 with respect to the X axis, Y axis, and θX directions using the laser interferometer units 6A and 6B. When executing the exposure process of the substrate P or when executing a predetermined measurement process, the control device 5 operates the drive systems 3 and 4 based on the measurement result of the interferometer system 6 to thereby operate the mask stage 1 (mask M) and position control of the substrate stage 2 (substrate P).

  The alignment system 9 measures alignment marks provided on the substrate P. The alignment system 9 is a so-called off-axis alignment system, and includes a plurality of microscopes 9 </ b> A to 9 </ b> F arranged to face the surface of the substrate P held on the substrate stage 2. Each of the microscopes 9A to 9F includes a projection unit that irradiates detection light to the detection regions AL1 to AL6, and a light receiving unit that can acquire an optical image of the alignment marks arranged in the detection regions AL1 to AL6.

  The control device 5 performs an exposure process so that the image of the pattern of the mask M formed by the projection system PS is superimposed on the pattern already formed on the substrate P. During the exposure process, the control device 5 measures the alignment mark of the substrate P, and executes an alignment process for aligning the substrate P and the pattern image of the mask M based on the measurement result of the alignment mark.

  FIG. 3 is a schematic diagram showing an example of the positional relationship between the projection areas PR1 to PR7 of the projection system PS, the detection areas AL1 to AL6 of the alignment system 9, and the substrate P, and is in a plane including the surface of the substrate P. The positional relationship is shown.

  As shown in FIG. 3, in the present embodiment, the outer shape of the substrate P is a quadrangle. In the present embodiment, the outer shape of the substrate P is a rectangle that is long in the X-axis direction. The external shape of the substrate P may be a square or a rectangle that is long in the Y-axis direction.

  The substrate P has four sides. The substrate P has two sides S1 and S2 that are substantially parallel to the X-axis direction, and two sides S3 and S4 that are substantially parallel to the Y-axis direction.

  In the following description, one of the two sides S1 and S2 substantially parallel to the X-axis direction of the substrate P is appropriately referred to as a first side S1, and the other side is appropriately referred to as a second side S2. . In the present embodiment, the first side S1 is a side on the + Y side, and the second side S2 is a side on the −Y side. Of the two sides S3 and S4 that are substantially parallel to the Y-axis direction of the substrate P, one side is appropriately referred to as a third side S3, and the other side is appropriately referred to as a fourth side S4. In the present embodiment, the third side S3 is a −X side side, and the fourth side S4 is a + X side side.

  In the following description, an outer edge region of the substrate P including an end (side) of the substrate P is appropriately referred to as an outer edge region GA. Moreover, the area | region inside the outer edge area | region GA among the board | substrates P is suitably called inner area | region UA. The internal area UA is an area including the center of the substrate P. The outer edge area GA is an area arranged around the inner area UA.

  Further, in the outer edge region GA, a portion that is long in the Y-axis direction is appropriately referred to as a Y portion GAy, and a portion that is long in the X-axis direction is appropriately referred to as an X portion GAx.

  In the present embodiment, the Y portion GAy includes a first Y portion GAy1 that includes a third side S3 that is long in the Y-axis direction, and a second Y portion GAy2 that includes a fourth side S4 that is long in the Y-axis direction. The X portion GAx includes a first X portion GAx1 that includes a first side S1 that is long in the X-axis direction and a second X portion GAx2 that includes a second side S2 that is long in the X-axis direction. Among the Y portions GAy, the first Y portion GAy1 is disposed on the −X side with respect to the center of the substrate P, and the second Y portion GAy2 is disposed on the + X side with respect to the center of the substrate P. Of the X portion GAx, the first X portion GAx1 is disposed on the + Y side with respect to the center of the substrate P, and the second X portion GAx2 is disposed on the −Y side with respect to the center of the substrate P.

  As shown in FIG. 3, in the present embodiment, the surface of the substrate P has a plurality of exposure areas (processed areas) PA1 to PA6 onto which an image of the pattern of the mask M is projected. In the present embodiment, the surface of the substrate P has six exposure areas PA1 to PA6. The exposure areas PA1, PA2, and PA3 are arranged at approximately equal intervals in the Y axis direction, and the exposure areas PA4, PA5, and PA6 are arranged at approximately equal intervals in the Y axis direction. The exposure areas PA1, PA2, and PA3 are arranged on the + X side with respect to the exposure areas PA4, PA5, and PA6. The exposure areas PA1 to PA6 are arranged in the internal area UA of the substrate P.

  In the present embodiment, each of the projection regions PR1 to PR7 is a trapezoid in the XY plane. In the present embodiment, projection regions PR1, PR3, PR5, PR7 by the projection optical systems PL1, PL3, PL5, PL7 are arranged at substantially equal intervals in the Y-axis direction, and projection regions PR2 by the projection optical systems PL2, PL4, PL6 are arranged. , PR4, PR6 are arranged at substantially equal intervals in the Y-axis direction. The projection areas PR1, PR3, PR5, and PR7 are arranged on the −X side with respect to the projection areas PR2, PR4, and PR6. Further, the projection areas PR2, PR4, and PR6 are arranged between the projection areas PR1, PR3, PR5, and PR7 with respect to the Y-axis direction.

  In the present embodiment, the detection areas AL1 to AL6 by the microscopes 9A to 9F are arranged on the −X side with respect to the projection areas PR1 to PR7. The detection areas AL1 to AL6 are arranged away from each other in the Y-axis direction. Among the plurality of detection areas AL1 to AL6, the distance between the two outer detection areas AL1 and the detection area AL6 with respect to the Y-axis direction is the two outer exposure areas PA1 (with respect to the Y-axis direction among the plurality of exposure areas PA1 to PA6). The distance between the −Y side edge of PA4) and the + Y side edge of exposure area PA3 (PA6) is substantially equal.

  The alignment system 9 can detect a plurality of alignment marks m1 to m6 provided on the substrate P. In the present embodiment, six alignment marks m1 to m6 are arranged on the substrate P in the Y axis direction, and groups of these alignment marks m1 to m6 are arranged at four locations in the X axis direction. In one group, each of the alignment marks m1 to m6 is arranged away from the X-axis direction. Each of the four groups is spaced apart with respect to the Y-axis direction.

  In the following description, among the four groups of alignment marks m1 to m6, the most -X side group is appropriately referred to as a first group G1, and the -X side group after the first group G1 is appropriately second. The group on the −X side after the second group G2 is appropriately referred to as a third group G3, and the most group on the + X side is appropriately referred to as a fourth group G4. Among the alignment marks m1 to m6 of the first to fourth groups G1 to G4, the alignment marks m1 to m4 of the first group G1 are closest to the third side S3, and the alignment marks m1 to m4 of the fourth group G4 are It is closest to the fourth side S4.

  The alignment marks m1 to m6 of the second and third groups G2 and G3 are arranged in the internal area UA of the substrate P. The alignment marks m1 to m6 of the first and fourth groups G1 and G4 are arranged in the outer edge region GA of the substrate P. In the present embodiment, the alignment marks m1 to m6 of the first and fourth groups G1 and G4 are arranged in the Y portion GAy in the outer edge region GA. In the present embodiment, the alignment marks m1 to m6 of the first group G1 are arranged in the first Y portion GAy1 of the Y portion GAy, and the alignment marks m1 to m6 of the fourth group G4 are the first portion of the Y portion GAy. Arranged in the 2Y portion GAy2.

  Of the alignment marks m1 to m6, the alignment marks m1 and m2 are provided adjacent to both ends of the exposure areas PA1 and PA4, and the alignment marks m3 and m4 are provided at both ends of the exposure areas PA2 and PA5. The alignment marks m5 and m6 are provided adjacent to each other at both ends of the exposure areas PA3 and PA6.

  In the present embodiment, microscopes 9A to 9F (detection areas AL1 to AL6) are arranged corresponding to the six alignment marks m1 to m6 arranged on the substrate P so as to be separated in the Y-axis direction. The microscopes 9A to 9F are provided so that the alignment marks m1 to m6 are simultaneously arranged in the detection areas AL1 to AL6. The alignment system 9 can simultaneously detect the six alignment marks m1 to m6 using the microscopes 9A to 9F. In other words, the alignment system 9 can simultaneously detect the alignment marks m1 to m6 of the first group G1, and can simultaneously detect the alignment marks m1 to m6 of the second group G2, and the alignment marks of the third group G3. m1 to m6 can be detected simultaneously, and the alignment marks m1 to m6 of the fourth group G4 can be detected simultaneously.

  By the way, the substrate P may be deformed. The substrate P may be heated by various process processes performed before and after the exposure process, for example. As a result, the substrate P may be deformed (thermally deformed). Further, the substrate P may be deformed (distorted) due to the holding state of the substrate holding unit 16. Note that the holding state of the substrate holding unit 16 includes, for example, suction unevenness of the suction mechanism provided in the substrate holding unit 16. The cause of the deformation of the substrate P is not limited to the process processing and the holding state of the substrate holding unit 16. For example, when the substrate P is loaded into the substrate holding unit 16 with the substrate P placed on a tray as disclosed in Japanese Patent Application Laid-Open No. 2001-332600 or the like, it depends on the shape and deformation of the tray. Thus, there is a possibility that the substrate P carried in and held in the substrate holding part 16 is deformed.

  FIG. 4A is a diagram schematically illustrating an example of a state where the substrate P is deformed. FIG. 4B shows the deformation states of the exposure areas PA1 to PA6 when the substrate P is deformed as shown in FIG. 4A, and the alignment marks m1 of the first and fourth groups G1 and G4. It is a figure which shows typically an example of the position of -m6. Similarly, FIG. 5A, FIG. 6A, and FIG. 7A are diagrams schematically illustrating an example of a state in which the substrate P is deformed, and FIG. 5B and FIG. B) and FIG. 7B show deformation states of the exposure areas PA1 to PA6 when the substrate P is deformed as shown in FIGS. 5A, 6A, and 7A. FIG. 6 is a diagram schematically illustrating an example of positions of alignment marks m1 to m6 of the first and fourth groups G1 and G4. In FIGS. 4A to 7A, the substrate P in an undeformed state is indicated by a broken line. In FIGS. 4B to 7B, the exposure areas PA1 to PA6 that are not deformed are indicated by broken lines.

  When the substrate P is deformed, the inventor of the present invention relates to the deformation pattern of the substrate P mainly in four deformation patterns as shown in FIGS. 4 (A) to 7 (A). It was found that it was classified (classified).

  The deformation pattern shown in FIG. 4A is deformed so that the first X portion GAx1 (first side S1) and the second X portion GAx2 (second side S2) bend outward with respect to the center of the substrate P. The first Y portion GAy1 (third side S3) and the second Y portion GAy2 (fourth side S4) are deformation patterns that are deformed so as to bend inward with respect to the center of the substrate P.

  The deformation pattern shown in FIG. 5A is deformed so that the first X portion GAx1 (first side S1) and the second X portion GAx2 (second side S2) bend inward with respect to the center of the substrate P. The first Y portion GAy1 (third side S3) and the second Y portion GAy2 (fourth side S4) are deformation patterns that deform so as to bend outward with respect to the center of the substrate P.

  The deformation pattern shown in FIG. 6A is deformed so that the center portion of the first X portion GAx1 (first side S1) protrudes outward with respect to the center of the substrate P, and the second X portion GAx2 (first portion). The center portion of the two sides S2) is deformed so as to protrude inward with respect to the center of the substrate P, and the + Y side end of the first Y portion GAy1 (third side S3) is more than the −Y side end. Is a deformation pattern in which the + Y side end of the second Y portion GAy2 (fourth side S4) is located on the + X side with respect to the −Y side end.

  The deformation pattern shown in FIG. 7A is deformed so that the central portion of the first X portion GAx1 (first side S1) protrudes inward with respect to the center of the substrate P. The center portion of the two sides S2) is deformed so as to protrude outward with respect to the center of the substrate P, and the + Y side end of the first Y portion GAy1 (third side S3) is more than the −Y side end. Is a deformation pattern in which the end on the + Y side of the second Y portion GAy2 (fourth side S4) is positioned on the −X side with respect to the end on the −Y side.

  In the following description, the deformation pattern of the substrate P shown in FIG. 4 (A) is appropriately referred to as a first deformation pattern, and the deformation pattern of the substrate P shown in FIG. 5 (A) is appropriately referred to as a second deformation pattern. The deformation pattern of the substrate P shown in FIG. 6A is appropriately referred to as a third deformation pattern, and the deformation pattern of the substrate P shown in FIG. 7A is appropriately referred to as a fourth deformation pattern.

  In the following description, for the sake of simplicity, the case where the deformation of the outer edge area GA is at least one of the first side S1, the second side S2, the third side S3, and the fourth side S4 is taken as an example. However, the deformation of the first side S1 is a concept including the deformation of the first X portion GAx1, the deformation of the second side S2 is a concept including the deformation of the second X portion GAx2, and the deformation of the third side S3. The deformation is a concept including the deformation of the first Y portion GAy1, and the deformation of the fourth side S4 is a concept including the deformation of the second Y portion GAx2.

  As shown in FIG. 4B, FIG. 5B, FIG. 6B, and FIG. 7B, each of the exposure regions PA1 to PA6 of the substrate P has the first, second, and second of the substrate P. 3. Deform according to the fourth deformation pattern. In addition, each of the alignment marks m1 to m6 is displaced according to the first, second, third, and fourth deformation patterns of the substrate P. The alignment marks m1 to m6 of the first group G1 are displaced according to the deformation of the first Y portion GAy1 of the outer edge region GA, and the alignment marks m1 to m6 of the fourth group G4 are deformed of the second Y portion GAy2 of the outer edge region GA. Displaces according to

  As shown in FIG. 4A, in the present embodiment, the first deformation pattern is a deformation pattern that deforms so that each of the third side S3 and the fourth side S4 of the substrate P draws a quadratic curve. In other words, the first deformation pattern is a deformation pattern in which each of the third side S3 and the fourth side S4 can be expressed by a quadratic expression.

  As shown in FIG. 5A, in the present embodiment, the second deformation pattern is a deformation pattern that deforms so that each of the third side S3 and the fourth side S4 of the substrate P draws a quadratic curve. In other words, the second deformation pattern is a deformation pattern in which each of the third side S3 and the fourth side S4 can be expressed by a quadratic expression.

  As shown in FIG. 6A, in the present embodiment, the third deformation pattern is deformed so that each of the third side S3 and the fourth side S4 of the substrate P draws a straight line inclined with respect to the Y axis. It is a deformation pattern. In other words, the third deformation pattern is a deformation pattern in which each of the third side S3 and the fourth side S4 can be expressed by a linear expression.

  As shown in FIG. 7A, in the present embodiment, the fourth deformation pattern is deformed so that each of the third side S3 and the fourth side S4 of the substrate P draws a straight line inclined with respect to the Y axis. It is a deformation pattern. In other words, the fourth deformation pattern is a deformation pattern in which each of the third side S3 and the fourth side S4 can be expressed by a linear expression.

  The inventor of the present invention has found that the deformation states of the first side S1 and the second side S2 are determined according to the deformation states of the third side S3 and the fourth side S4. In other words, the inventor has found that there is a correlation between the deformation state of the first side S1 and the second side S2 and the deformation state of the third side S3 and the fourth side S4.

  That is, the inventor obtains information on the deformation of the third side S3 and the fourth side S4, and based on the obtained result and a predetermined relational expression (correlation formula) determined in advance. It has been found that information relating to the deformation of the first side S1 and the second side S2 can be obtained (estimated).

  In the present embodiment, the deformed state includes at least one of the degree of deformation, the shape after deformation, and the amount of deformation (the difference between the undeformed state and the deformed state).

  In the present embodiment, information related to the deformation of the third side S3 and the fourth side S4 can be acquired by measuring the alignment marks m1 to m6. The alignment marks m1 to m6 are displaced according to the deformation of the substrate P. The alignment marks m1 to m6 of the first group G1 arranged in the first Y portion GAy1 including the third side S3 are displaced according to the deformation of the third side S3 (first Y portion GAy1), and include the fourth side S4. The alignment marks m1 to m6 of the fourth group G4 arranged in the second Y portion GAy2 are displaced according to the deformation of the fourth side S4 (second Y portion GAy2). In the present embodiment, the alignment system 9 can measure the alignment marks m1 to m6. Therefore, the control device 5 uses the alignment system 9 to measure the alignment marks m1 to m6 of the first group G1 of the substrate P, and acquires information related to the deformation of the third side S3 based on the measurement result. can do. Moreover, the control apparatus 5 acquires the information regarding the deformation | transformation of 4th edge | side S4 by measuring the alignment marks m1-m6 of the 4th group G4 of the board | substrate P using the alignment system 9, based on the measurement result. can do.

  The predetermined relational expression can be determined based on, for example, a preliminary experiment or a simulation result.

  The predetermined relational expression may be a primary expression or a secondary expression. Further, the predetermined relational expression may be a third or higher order polynomial. In the present embodiment, when the third side S3 and the fourth side S4 of the substrate P are deformed so as to draw a quadratic curve, a quadratic expression is adopted as a relational expression. In other words, when the deformation of the substrate P is at least one of the first deformation pattern and the second deformation pattern, a quadratic expression is adopted as the relational expression.

  In the present embodiment, when the third side S3 and the fourth side S4 of the substrate P are deformed so as to draw a straight line, a linear expression is adopted as a relational expression. In other words, when the deformation of the substrate P is at least one of the third deformation pattern and the fourth deformation pattern, the linear expression is adopted as the relational expression.

  That is, in the present embodiment, a plurality of relational expressions corresponding to the deformation of the third side S3 (first Y portion GAy1) and the fourth side S4 (second Y portion GAy2) are prepared in advance. The plurality of relational expressions have different orders. In the present embodiment, at least a linear relational expression and a quadratic relational expression are prepared in advance, and a predetermined number of relational expressions are obtained from a plurality of relational expressions according to the deformation states of the third side S3 and the fourth side S4. A relational expression is selected. That is, when the third side S3 and the fourth side S4 are deformed so as to draw a quadratic curve, the relational expression of the quadratic expression among the relational expressions of the primary expression and the quadratic expression prepared in advance. Is selected, and the first side S1 and the second side S2 are deformed so as to draw a straight line, among the primary formulas and the secondary formulas prepared in advance, the primary formula Is selected.

  For example, when it is acquired based on the measurement result of the alignment system 9 that the deformation state of the third side S3 and the fourth side S4 of the substrate P is a deformation state drawing a predetermined quadratic curve, the control device 5 The deformation state of the first side S1 and the second side S2 is acquired based on the acquired result (information on the predetermined quadratic curve) and a predetermined relational expression (secondary expression) set in advance. (Estimate). On the basis of the measurement result of the alignment system 9, when it is acquired that the deformation state of the third side S3 and the fourth side S4 of the substrate P is a deformation state drawing a predetermined straight line, the control device 5 Based on the acquired result (information on a predetermined straight line) and a predetermined relational expression (primary expression) determined in advance, the deformation states of the first side S1 and the second side S2 are acquired (estimated). be able to.

  When the predetermined relational expression is a quadratic expression, the deformation state of the first side S1 and the second side S2 determined based on the relational expression is expressed by a quadratic expression. In other words, when the predetermined relational expression is a quadratic expression, the first side S1 and the second side S2 are deformed so as to draw a predetermined quadratic curve.

  When the predetermined relational expression is a linear expression, the deformation state of the first side S1 and the second side S2 determined based on the relational expression is expressed by a linear expression. In other words, when the predetermined relational expression is a linear expression, the first side S1 and the second side S2 are deformed so as to draw a predetermined straight line (including two or more straight lines).

  Next, an example of the exposure method according to the present embodiment will be described with reference to the flowchart of FIG. 8 and schematic diagrams of FIGS.

  The substrate P before exposure is transported (loaded) to the substrate holder 16 by a predetermined transport device. The substrate P is provided with alignment marks m1 to m6. The control device 5 uses the alignment system 9 to acquire information related to the deformation of the substrate P held by the substrate holding unit 16, and the alignment of the first group G1 of the substrates P held by the substrate holding unit 16 is performed. The marks m1 to m6 and the alignment marks m1 to m6 of the fourth group G4 are measured.

  First, the control device 5 includes the substrate stage 2 that holds the substrate P by the substrate holder 16 so that the alignment marks m1 to m6 of the first group G1 are arranged in the detection areas AL1 to AL6 of the alignment system 9. Control the position. The control device 5 measures the alignment marks m1 to m6 of the first group G1 using the alignment system 9 while measuring the position of the substrate stage 2 using the laser interference system 6 (step SA1).

  Next, the control device 5 holds the substrate P by the substrate holding unit 16 so that the alignment marks m1 to m6 of the fourth group G4 are arranged in the detection areas AL1 to AL6 of the alignment system 6. Control the position of the. The control device 5 measures the alignment marks m1 to m6 of the fourth group G4 using the alignment system 9 while measuring the position of the substrate stage 2 using the laser interference system 6 (step SA2).

  As a result, the control device 5 controls the positions of the alignment marks m1 to m6 of the first group G1 in the coordinate system defined by the laser interferometer system 6 and the fourth group in the coordinate system defined by the laser interferometer system 6. The positions of the alignment marks m1 to m6 of G4 can be obtained.

  Moreover, the control apparatus 5 can acquire the information regarding the deformation | transformation of 3rd edge | side S3 based on the measurement result of alignment mark m1-m6 of the 1st group G1 measured by step SA1. Moreover, the control apparatus 5 can acquire the information regarding a deformation | transformation of 4th edge | side S4 based on the measurement result of alignment mark m1-m6 of 4th group G4 measured by step SA2.

  Further, the control device 5 acquires information related to the deformation of the substrate P based on at least one of the measurement results of the alignment marks m1 to m6 of the first group G1 and the measurement results of the alignment marks m1 to m6 of the fourth group G4. can do.

  Moreover, the control apparatus 5 can obtain | require the displacement amount of alignment mark m1-m6 of 1st group G1, and the displacement amount of alignment mark m1-m6 of 4th group G4 based on the measurement result of the alignment system 9. FIG. .

  The displacement amounts of the alignment marks m1 to m6 are the positions of the alignment marks m1 to m6 on the substrate P when the substrate P is not deformed and the alignment marks on the substrate P when the substrate P is deformed. The difference from the position of m1 to m6.

  In the present embodiment, the alignment marks m1 to m6 of the first group G1 are measured and then the alignment marks m1 to m6 of the fourth group G4 are measured. Of course, the alignment marks of the fourth group G4 are measured. After measuring m1 to m6, the alignment marks m1 to m6 of the first group G1 may be measured.

  Next, the control device 5 obtains a linear component of deformation of the substrate P based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4 (step SA3).

  The deformation of the substrate P can be divided into a linear component and a non-linear component. The control apparatus 5 calculates | requires a linear component first among a linear component and a nonlinear component. The linear component of deformation of the substrate P includes, for example, a displacement amount from a reference lattice point in a coordinate system defined by the laser interferometer system 6, and a shift component in the X-axis direction of the substrate P with respect to the lattice point, It means at least one of a shift component related to the Y-axis direction, a rotation component related to the θZ direction, a scaling component related to the X-axis direction, a scaling component related to the Y-axis direction, and the orthogonality.

  Next, based on the linear component of deformation of the substrate P obtained in step SA3, the control device 5 corrects the linear correction value (linear correction amount) for the substrate P for correcting the linear component during exposure of the substrate P. Is obtained (step SA4).

  In the following description, the linear correction value obtained in step SA4 is appropriately referred to as a plate linear correction value.

  Next, the control device 5 obtains a nonlinear component of the deformation of the substrate P based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4 (step SA5).

  In the present embodiment, the control device 5 determines the substrate P based on the linear component of the deformation of the substrate P obtained in step SA3 and the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4. The nonlinear component of the deformation can be obtained. In the present embodiment, the control device 5 acquires information related to the deformation of the substrate P including both the linear component and the nonlinear component based on the measurement results of the alignment marks m1 to m6 in the first and fourth groups G1 and G4. be able to. The control device 5 determines the deformation of the substrate P based on the difference between the information regarding the deformation of the substrate P obtained based on the measurement results of the alignment marks m1 to m6 and the linear component of the deformation of the substrate P obtained in step SA3. A nonlinear component can be obtained.

  As described above, the alignment marks m1 to m6 are displaced according to the deformation of the substrate P. The alignment marks m1 to m6 of the first group G1 are mainly displaced according to the deformation state of the third side S3, and the alignment marks m1 to m6 of the fourth group G4 close to the fourth side S4 are mainly the fourth side. It is displaced according to the deformation state of S4. Therefore, the control device 5 uses the alignment system 9 to measure the positions of the alignment marks m1 to m6 of the first and fourth groups G1 and G4 (for example, the position in the coordinate system defined by the laser interferometer system 6). Based on the result, it can be determined whether the third and fourth sides S3 and S4 are deformed in a deformed state of a quadratic curve or a straight line. In addition, the control device 5 determines that the substrate P has the first deformation pattern, the second deformation pattern, the third deformation pattern, and the fourth based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4. It is possible to determine which deformation pattern of the deformation pattern is used for deformation.

  For example, when it is determined that the line connecting the alignment marks m1 to m6 of the first and fourth groups G1 and G4 draws a quadratic curve based on the measurement result of the alignment system 9, the control device 5 It can be determined that the fourth sides S3 and S4 are deformed so as to draw a quadratic curve, and it can be determined that the substrate P is deformed by at least one of the first deformation pattern and the second deformation pattern. Specifically, when it is determined that the line connecting the alignment marks m1 to m6 is bent inward with respect to the center of the substrate P as shown in FIG. If it is determined that the substrate P is deformed in the first deformation pattern, and it is determined that the substrate P is bent outward as shown in FIG. 5B, the substrate P is deformed in the second deformation pattern. Can be determined.

  Further, based on the measurement result of the alignment system 9, it is determined that the line connecting the alignment marks m1 to m6 of the first and fourth groups G1 and G4 draws a straight line and the line is inclined with respect to the Y axis. In this case, the control device 5 determines that the third and fourth sides S3 and S4 are deformed so as to draw a straight line inclined with respect to the Y axis, and the substrate P is in the third deformation pattern and the fourth deformation pattern. It can be determined that at least one of them is deformed. Specifically, when it is determined that the line connecting the alignment marks m1 to m6 is inclined as illustrated in FIG. 6B, the control device 5 causes the substrate P to be deformed in the third deformation pattern. If it is determined that the substrate P is inclined as shown in FIG. 7B, it can be determined that the substrate P is deformed in the fourth deformation pattern.

  Based on the measurement results of the alignment marks m <b> 1 to m <b> 6, the control device 5 is deformed by any one of the first deformation pattern, the second deformation pattern, the third deformation pattern, and the fourth deformation pattern. Is obtained (step SA6).

  Hereinafter, as an example, the case where the nonlinear component of the deformation of the substrate P includes the nonlinear component of the second deformation pattern will be described as an example. 9 and 10 are diagrams schematically illustrating an example of a nonlinear component of deformation of the substrate P that is held by the substrate holding unit 16 and is deformed according to the second deformation pattern. FIG. 9 is a schematic diagram illustrating an example of a nonlinear component of deformation of the third side S3 and the fourth side S4 when the substrate P is deformed in the second deformation pattern, and FIG. 10 is a diagram illustrating the substrate P having the second deformation pattern. It is a schematic diagram which shows an example of the non-deformation component of 1st edge | side S1 and 2nd edge | side S2 at the time of deform | transforming by.

  As described above, in the state where the substrate P is deformed in the second deformation pattern, the third side S3 and the fourth side S4 can draw a quadratic curve and can be expressed by a quadratic expression. Even when the non-linear component of the deformation of the substrate P is extracted in a state where the substrate P is deformed in the second deformation pattern, the third side S3 and the fourth side S4 draw a quadratic curve. Can be expressed as

  In FIG. 9, the nonlinear component regarding the X-axis direction in the third side S3 is represented by the following quadratic expression.

Δx1 (PY) = a × PY ² + b × PY + c (1)

  In FIG. 9, the nonlinear component regarding the X-axis direction in the fourth side S4 is represented by the following quadratic expression.

Δx2 (PY) = d × PY ² + e × PY + f (2)

  Here, PY represents a Y-axis direction component in a coordinate system (substrate coordinate system) on the substrate P.

  Based on the measurement result of the alignment marks m1 to m6 by the alignment system 9, the control device 5 uses the coefficients a, b, c and the fourth side S4 of the equation (1) which is a quadratic expression representing the third side S3. It is possible to determine the coefficients d, e, and f of the equation (2) that is a quadratic equation representing.

  Based on the measurement results of the alignment marks m1 to m6 of the first group G1, the control device 5 performs a predetermined calculation process including a fitting process (for example, a fitting process using the least square method) with respect to the expression (1). , (1) coefficients a, b, and c can be obtained. Further, the control device 5 performs a predetermined arithmetic process including a fitting process on the expression (2) based on the measurement results of the alignment marks m1 to m6 of the fourth group G4, thereby obtaining the coefficient of the expression (2). d, e, and f can be obtained.

  As described above, in the nonlinear component of the substrate P, the expression (1) which is a quadratic expression representing the third side S3 and the expression (2) which is a quadratic expression representing the fourth side S4 are determined (step SA7). .

  As described above, information related to the deformation of the nonlinear components of the third side S3 and the fourth side S4 is acquired based on the measurement results of the alignment marks m1 to m6.

  Next, the control device 5 determines the first side S1 and the first side based on the formulas (1) and (2) representing the third side S3 and the fourth side S4, and a predetermined relational expression set in advance. A quadratic expression representing the two sides S2 is determined.

  As described above, the predetermined relational expression can be determined in advance based on, for example, the result of a preliminary experiment or simulation, and information regarding the relational expression is stored in the storage device 5R. The storage device 5R stores in advance a plurality of relational expressions corresponding to the deformation of the third side S3 and the fourth side S4. The control device 5 selects a predetermined relational expression from a plurality of relational expressions according to the deformation state of the third side S3 and the fourth side S4 acquired based on the measurement results of the alignment marks m1 to m6 (step SA8). ).

  That is, the control device 5 uses a plurality of relational expressions that are used to acquire information related to the deformation of the first side S1 and the second side S2 according to the deformation state of the third side S3 and the fourth side S4. Determine from the formula.

  In the present embodiment, when it is determined that the substrate P is deformed in the second deformation pattern, that is, when it is determined that the third side S3 and the fourth side S4 of the substrate P are deformed so as to draw a quadratic curve, The control device 5 selects a quadratic expression as a predetermined relational expression.

  The control device 5 acquires information regarding the deformation of the first side S1 based on the acquired information regarding the deformation of the third side S3 and the fourth side and the following expression (3) which is a predetermined relational expression ( Step SA9).

  Specifically, the control device 5 described above (1), (1), (4) showing the deformation state of the third side S3 and the fourth side S4 acquired using the measurement result of the alignment system 9 and the arithmetic processing (fitting processing or the like). A quadratic curve (secondary expression) representing the first side S1 is obtained based on the expression (2) and the following expression (3). In addition, (3) Formula is a quadratic formula showing the nonlinear component regarding the X-axis direction in 1st edge | side S1.

Δy1 (PX) = α × (da) / 2 × PX ² + h × PX + i (3)

  Moreover, the control apparatus 5 acquires the information regarding the deformation | transformation of 2nd edge | side S2 based on the acquired information regarding the deformation | transformation of 3rd edge | side S3 and 4th edge | side, and the following (4) Formula which is a predetermined relational expression. (Step SA10).

  Specifically, the control device 5 described above (1), (1), (4) showing the deformation state of the third side S3 and the fourth side S4 acquired using the measurement result of the alignment system 9 and the arithmetic processing (fitting processing or the like). A quadratic curve (secondary expression) representing the second side S2 is obtained based on the expression (2) and the following expression (4). In addition, (4) Formula is a quadratic formula showing the nonlinear component regarding the X-axis direction in 2nd edge | side S2.

Δy2 (PX) = β × (ad) / 2 × PX ² + j × PX + k (4)

  In the equations (3) and (4), PX represents an X-axis direction component in the coordinate system (substrate coordinate system) on the substrate P. The coefficients α and β are predetermined values (proportional counts) obtained from preliminary experiments or simulations.

  In addition, in FIG. 10, 1st edge | side S1 represented by the above-mentioned (3) Formula and 2nd edge | side S2 represented by (4) Formula are shown typically.

  As described above, based on the coefficients a and d obtained by acquiring information on the deformation of the third side S3 and the fourth side S4, and the coefficients α and β obtained from preliminary experiments or simulations, the first side When S1 and the second side S2 are expressed by a quadratic expression, the quadratic coefficients (α × (da)) and (β × (ad)) can be obtained. In the equations (3) and (4), the first-order coefficients h and j and the zero-order coefficients i and k are the outer shape of the substrate P or the alignment marks m6 of the first and sixth groups G1 and G6. , M1 can be uniquely determined.

  As described above, information on the deformation of the third side S3 and the fourth side S4 can be acquired based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4. Based on the measurement results of the alignment marks m1 to m6 of the groups G1 and G4 and a predetermined relational expression, information regarding the deformation of the first side S1 and the second side S2 can be acquired. That is, in this embodiment, the control device 5 includes the first to fourth sides S1 to S4 based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4. Information regarding the deformation of the outer edge area GA can be acquired.

  Next, the control device 5 acquires information related to the deformation of the internal area UA of the substrate P (step SA11).

  In the present embodiment, the control device 5 obtains a nonlinear component of deformation in each of the plurality of exposure areas PA1 to PA6 arranged in the internal area UA of the substrate P.

  In the present embodiment, as shown in FIGS. 11 and 12, a plurality of representative positions D1 to D6 are defined in each of the plurality of exposure areas PA1 to PA6. In this embodiment, six exposure positions D1 to D6 are defined for one exposure area PA1 (PA2, PA3, PA4, PA5, PA6), but the positions may be five or less, Seven or more may be sufficient.

  As in the schematic diagram shown in FIG. 11, in the present embodiment, the control device 5 is based on two quadratic expressions Δx1 (PY) and Δx2 (PY) expressed by the expressions (1) and (2). Nonlinear components in the X-axis direction at each of the plurality of positions D1 to D6 are calculated by linear interpolation.

  Further, as shown in the schematic diagram of FIG. 12, the control device 5 performs linear interpolation based on the two quadratic expressions Δy1 (PX) and Δy2 (PX) expressed by the expressions (3) and (4). The non-linear component regarding the Y-axis direction at each of the plurality of positions D1 to D6 is calculated.

  Next, the control device 5 corrects the non-linear component of deformation in each of the exposure regions PA1 to PA6 during the exposure of the substrate P based on the non-linear component of deformation in each of the exposure regions PA1 to PA6. A non-linear correction value (non-linear correction amount) for each of .about.PA6 is obtained (step SA12).

  Further, the control device 5 corrects the linear component in each of the exposure areas PA1 to PA6 during exposure of the substrate P based on the nonlinear component of the deformation of the substrate P in each of the exposure areas PA1 to PA6. A linear correction value (linear correction amount) for each of .about.PA6 is obtained (step SA13).

  In the following description, the nonlinear correction value obtained in step SA12 is appropriately referred to as a scan nonlinear correction value, and the linear correction value obtained in step SA13 is appropriately referred to as a scan linear correction value.

  After obtaining the plate linear correction value, the scan nonlinear correction value, and the scan linear correction value, the control device 5 starts exposure of the substrate P held by the substrate holding unit 16 (step SA14). The controller 5 adjusts the exposure conditions based on the obtained correction value and exposes the substrate P. The control device 5 adjusts the exposure conditions so that the next pattern image is satisfactorily superimposed on the pattern already formed on the substrate P.

  The adjustment of the exposure condition includes, for example, at least one of a movement condition of the substrate P with respect to the projection regions PR1 to PR7 and a projection condition of the pattern image of the projection optical systems PL1 to PL7. The moving condition of the substrate P includes at least one of the moving speed (scanning speed), acceleration, and moving direction of the substrate P. The pattern image projection conditions include at least one of a position (shift, rotation), size (magnification), and shape in the XY plane of each of the projection regions PR1 to PR7. The projection condition of the pattern image is an adjustment including a shift adjustment mechanism, a rotation adjustment mechanism, a scaling adjustment mechanism, and the like as disclosed in, for example, Japanese Unexamined Patent Application Publication Nos. 2003-151880 and 2003-309053. It can be adjusted by the mechanism.

  As described above, the exposure apparatus EX of the present embodiment is an exposure apparatus that projects the pattern image of the mask M onto the substrate P while moving the mask M and the substrate P in a predetermined scanning direction (multi-lens scan). Exposure apparatus). When the substrate P is exposed, the control device 5 controls the mask stage 1 and the substrate stage 2 to move the mask M and the substrate P in a predetermined scanning direction in the XY plane. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the X-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the X-axis direction. The control device 5 moves the substrate P in the X-axis direction with respect to the first to seventh projection regions PR1 to PR7 of the projection system PS, and in synchronization with the movement of the substrate P in the X-axis direction, While moving the mask M in the X-axis direction with respect to the first to seventh illumination regions IR1 to IR7 of IS, the mask M is illuminated with the exposure light EL by the illumination system IS, and from the mask M via the projection system PS. The substrate P is irradiated with the exposure light EL. Thereby, the substrate P is exposed with the exposure light EL from the mask M irradiated to the first to seventh projection regions PR1 to PR7 of the first to seventh projection optical systems PL1 to PL7, and an image of the pattern of the mask M is formed. Projected onto the substrate P.

  As described above, according to the present embodiment, information regarding the deformation of the substrate P can be acquired while suppressing the number of measurement points of the alignment mark. Therefore, it is possible to accurately acquire information related to the deformation of the substrate P while suppressing a decrease in throughput, and to suppress the occurrence of exposure failure and the generation of defective devices.

  In the present embodiment, the case where the substrate P is deformed with the second deformation pattern has been described as an example in the processing after step SA6. However, the same applies to the case where the substrate P is deformed with the first deformation pattern. By executing this process, information regarding the deformation of the substrate P can be acquired.

Second Embodiment
Next, a second embodiment will be described. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  In the first embodiment described above, the processing after step SA6 has been described by taking as an example the case where the nonlinear component of the deformation of the substrate P includes the nonlinear component of the second deformation pattern (or the first deformation pattern). In the second embodiment, a case where the nonlinear component of deformation of the substrate P includes the nonlinear component of the fourth deformation pattern will be described as an example.

  FIG. 13 is a flowchart showing an example of an exposure method according to the second embodiment. Note that the processing related to steps SA1 to SA6 illustrated in FIG. 13 is the same as the processing described in the first embodiment, and thus description thereof is omitted.

  14 and 15 are diagrams schematically illustrating an example of a nonlinear component of deformation of the substrate P that is held by the substrate holding unit 16 and is deformed according to the fourth deformation pattern. FIG. 14 is a schematic diagram illustrating an example of a nonlinear component of deformation of the third side S3 and the fourth side S4 when the substrate P is deformed in the fourth deformation pattern, and FIG. 15 is a diagram illustrating the fourth deformation pattern of the substrate P. It is a schematic diagram which shows an example of the non-deformation component of 1st edge | side S1 and 2nd edge | side S2 at the time of deform | transforming by.

  In a state where the substrate P is deformed in the fourth deformation pattern, the third side S3 and the fourth side S4 can draw a straight line and be expressed by a linear expression. Even when the nonlinear component of the deformation of the substrate P is extracted in the state where the substrate P is deformed in the fourth deformation pattern, the third side S3 and the fourth side S4 draw a straight line and are expressed by a linear expression. be able to.

  In FIG. 14, the nonlinear component regarding the X-axis direction in the third side S3 is represented by the following linear expression.

  Δx1 (PY) = a × PY + b (5)

  In FIG. 14, the nonlinear component regarding the X-axis direction in the fourth side S4 is represented by the following linear expression.

  Δx2 (PY) = c × PY + d (6)

  Here, PY represents a Y-axis direction component in a coordinate system (substrate coordinate system) on the substrate P.

  Based on the result of measuring the alignment marks m1 to m6 by the alignment system 9, the control device 5 represents the coefficients a and b and the fourth side S4 of the equation (5) which is a linear expression representing the third side S3. The coefficients c and d in the equation (6), which is a linear equation, can be determined.

  Based on the measurement results of the alignment marks m1 to m6 of the first group G1, the control device 5 executes predetermined arithmetic processing including fitting processing with respect to the equation (5), whereby the coefficients a and b of the equation (5) are obtained. Can be requested. Further, the control device 5 executes a predetermined calculation process including a fitting process with respect to the expression (6) based on the measurement results of the alignment marks m1 to m6 of the fourth glue G4, thereby obtaining a coefficient of the expression (6). c and d can be obtained.

  As described above, in the nonlinear component of the substrate P, the expression (5) that is a linear expression representing the third side S3 and the expression (6) that is a linear expression representing the fourth side S4 are determined (step SB7). .

  Thereby, the information regarding the deformation | transformation of the nonlinear component of 3rd edge | side S3 and 4th edge | side S4 was acquired based on the measurement result of alignment mark m1-m6.

  Next, the control device 5 determines the first side S1 and the first side based on the formulas (5) and (6) representing the third side S3 and the fourth side S4 and a predetermined relational expression. A linear expression representing the two sides S2 is determined.

  As described above, the predetermined relational expression can be determined in advance based on, for example, the result of a preliminary experiment or simulation, and information regarding the relational expression is stored in the storage device 5R. The storage device 5R stores in advance a plurality of relational expressions corresponding to the deformation of the third side S3 and the fourth side S4. The control device 5 selects a predetermined relational expression from a plurality of relational expressions according to the deformation state of the third side S3 and the fourth side S4 acquired based on the measurement results of the alignment marks m1 to m6 (step SB8). ).

  That is, the control device 5 uses a plurality of relational expressions that are used to acquire information related to the deformation of the first side S1 and the second side S2 according to the deformation state of the third side S3 and the fourth side S4. Determine from the formula.

  In this embodiment, when it is determined that the substrate P is deformed in the fourth deformation pattern, that is, when it is determined that the third side S3 and the fourth side S4 of the substrate P are deformed so as to draw a straight line, the control device 5 selects a linear expression as a predetermined relational expression.

  The control device 5 acquires information regarding the deformation of the first side S1 based on the acquired information regarding the deformation of the third side S3 and the fourth side and the following expression (7) which is a predetermined relational expression ( Step SB9).

  Specifically, the control device 5 described above (5), (5) and (4) showing the deformation state of the third side S3 and the fourth side S4 acquired by using the measurement result of the alignment system 9 and the arithmetic processing (fitting processing or the like). Based on the equation (6) and the following equation (7), two straight lines (primary equations) representing the first side S1 are obtained. In addition, (7) Formula is a linear formula showing the nonlinear component regarding the X-axis direction in 1st edge | side S1.

  Δy (PX) = α × (c−a) / 2 × (L / 2− | PX |) (7)

  In the equation (7), L is the dimension of the substrate P in the X-axis direction, and the coefficient α is a predetermined value (proportional count) obtained from a preliminary experiment or simulation.

  Further, the control device 5 acquires information related to the deformation of the second side S2 based on the acquired information regarding the deformation of the third side S3 and the fourth side and the above-described expression (7) which is a predetermined relational expression. (Step SB10).

  In the present embodiment, each of the information related to the deformation of the first side S1 and the information related to the deformation of the second side S2 is expressed by Expression (7).

  In addition, in FIG. 15, 1st edge | side S1 and 2nd edge | side S2 which are represented by the above-mentioned Formula (7) are shown typically.

  As described above, based on the coefficients a and c obtained by acquiring information on the deformation of the third side S3 and the fourth side S4, and the coefficient α obtained from a preliminary experiment or simulation, the first side S1 and In the case where the second side S2 is represented by a linear expression, the primary coefficient (α × (c−a) / 2) can be obtained. In the equation (7), the zeroth order coefficient can be uniquely determined from the outer shape of the substrate P or the positions of the alignment marks m6 and m1 of the first and sixth groups G1 and G6.

  As described above, information on the deformation of the third side S3 and the fourth side S4 can be acquired based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4. Based on the measurement results of the alignment marks m1 to m6 of the groups G1 and G4 and a predetermined relational expression, information regarding the deformation of the first side S1 and the fourth side S4 can be acquired. That is, in this embodiment, the control device 5 includes the first to fourth sides S1 to S4 based on the measurement results of the alignment marks m1 to m6 of the first and fourth groups G1 and G4. Information regarding the deformation of the outer edge area GA can be acquired.

  Next, the control device 5 acquires information related to the deformation of the internal area UA of the substrate P (step SB11).

  In the present embodiment, the control device 5 obtains a nonlinear component of deformation in each of the plurality of exposure areas PA1 to PA6 arranged in the internal area UA of the substrate P.

  In the present embodiment, as shown in FIGS. 16 and 17, a plurality of representative positions D1 to D6 are defined in each of the plurality of exposure areas PA1 to PA6. In this embodiment, six exposure positions D1 to D6 are defined for one exposure area PA1 (PA2, PA3, PA4, PA5, PA6), but the positions may be five or less, Seven or more may be sufficient.

  As in the schematic diagram shown in FIG. 16, in the present embodiment, the control device 5 is based on the two primary expressions Δx1 (PY) and Δx2 (PY) expressed by the expressions (5) and (6). Nonlinear components in the X-axis direction at each of the plurality of positions D1 to D6 are calculated by linear interpolation.

  As shown in the schematic diagram of FIG. 17, the control device 5 performs linear interpolation on the Y axis at each of the plurality of positions D1 to D6 based on the linear expression Δy (PX) expressed by the expression (7). A nonlinear component related to the direction is calculated.

  Next, the control device 5 corrects the non-linear component of deformation in each of the exposure regions PA1 to PA6 during the exposure of the substrate P based on the non-linear component of deformation in each of the exposure regions PA1 to PA6. Scan nonlinear correction values for each of .about.PA6 are obtained (step SB12).

  Further, the control device 5 corrects the linear component in each of the exposure areas PA1 to PA6 during exposure of the substrate P based on the nonlinear component of the deformation of the substrate P in each of the exposure areas PA1 to PA6. Scan linear correction values for each of .about.PA6 are obtained (step SB13).

  After obtaining the plate linear correction value, the scan nonlinear correction value, and the scan linear correction value, the control device 5 starts exposure of the substrate P held by the substrate holding unit 16 (step SB14). The controller 5 adjusts the exposure conditions based on the obtained correction value and exposes the substrate P. The control device 5 adjusts the exposure conditions so that the next pattern image is satisfactorily superimposed on the pattern already formed on the substrate P.

  As described above, also in the present embodiment, it is possible to accurately acquire information related to deformation of the substrate P while suppressing a decrease in throughput, and to suppress the occurrence of exposure failure and the occurrence of defective devices.

  In the present embodiment, the case where the substrate P is deformed with the fourth deformation pattern has been described as an example in the processing after step SA6. However, the same applies to the case where the substrate P is deformed with the third deformation pattern. By executing this process, information regarding the deformation of the substrate P can be acquired.

  In the above-described embodiment, the information regarding the deformation of the first Y portion GAy1 disposed on the −X side with respect to the center of the substrate P and the information regarding the deformation of the second Y portion GAy2 disposed on the + X side are acquired. Based on the result and a predetermined relational expression, information related to the deformation of the X portion GAx is acquired. However, information related to the deformation of the first X portion GAx1 arranged on the + Y side with respect to the center of the substrate P and -Y. Information regarding deformation of the Y portion GAy may be acquired based on a result of acquiring information regarding deformation of the second X portion GAx2 arranged on the side and a predetermined relational expression.

  In the above-described embodiment, information related to the deformation of the Y portion GAy that is long in the Y-axis direction is acquired, and the deformation related to the deformation of the X portion GAx that is long in the X-axis direction is acquired based on the acquired result and a predetermined relational expression. Although the information is acquired, for example, based on the result of acquiring the information about the deformation of the Y portion GAy that is long in the Y-axis direction and a predetermined relational expression, the direction different from the X-axis and the Y-axis (for example, the Y-axis It is good also as acquiring the information regarding a deformation | transformation of a long part in the direction inclined 45 degrees with respect to. By adjusting the predetermined relational expression, the deformation of the second part different from the first part based on the information on the deformation of the first part and the predetermined relational expression in the outer edge region GA of the substrate P. Information about can be obtained.

  In the above-described embodiment, in the outer edge region of the substrate P, information on the deformation of the portion arranged on one side (for example, −X side) with respect to the center of the substrate P and the other side (for example, + X direction). The information regarding the deformation of the portion to be arranged is acquired, but information regarding only one of the deformations may be acquired. By adjusting the predetermined relational expression, the deformation of the second part different from the first part based on the information on the deformation of the first part and the predetermined relational expression in the outer edge region GA of the substrate P. Information about can be obtained.

  In the above-described embodiment, the outer shape of the substrate P is rectangular or square, but may be a rhombus or a parallelogram. Further, the outer shape of the substrate P may not be a quadrangle, may be a circle like a semiconductor wafer, or may be an ellipse.

  In the above-described embodiment, information related to the deformation of the substrate P is acquired by measuring the alignment marks m1 to m6 arranged on the substrate P. For example, the end (outer shape) of the substrate P is optically measured. It is good also as acquiring the information regarding the deformation | transformation of the board | substrate P using the measuring device which can measure automatically.

  As the substrate P in the above-described embodiment, not only a glass substrate for a display device but also a semiconductor wafer for manufacturing a semiconductor device, a ceramic wafer for a thin film magnetic head, or an original mask (reticle) used in an exposure apparatus ( Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the substrate P with the exposure light EL through the pattern of the mask M by moving the mask M and the substrate P synchronously. In addition, the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary, and is applied to a step-and-repeat type projection exposure apparatus (stepper) that sequentially moves the substrate P stepwise. Can do.

  The present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.

  Further, the present invention relates to a substrate stage for holding a substrate as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., and a reference mark without holding the substrate. The present invention can also be applied to an exposure apparatus that includes a formed reference member and / or a measurement stage on which various photoelectric sensors are mounted. An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display element or a display, but an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate P, a thin film magnetic head, an image sensor (CCD) In addition, the present invention can be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask, or the like.

  In each of the above-described embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale (diffraction grating) provided in each stage You may use the encoder system which detects this.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in US Pat. No. 6,778,257, a variable shaped mask (also called an electronic mask, an active mask, or an image generator) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. ) May be used. Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.

  The exposure apparatus EX of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 18, a microdevice such as a semiconductor device includes a step 201 for designing the function and performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate which is a substrate of the device. Manufacturing step 203, including substrate processing (exposure processing) including exposing the substrate with exposure light using a mask pattern and developing the exposed substrate (photosensitive material) according to the above-described embodiment The substrate is manufactured through a substrate processing step 204, a device assembly step (including processing processes such as a dicing process, a bonding process, and a packaging process) 205, an inspection step 206, and the like. In step 204, the photosensitive material is developed to form an exposure pattern layer (developd photosensitive material layer) corresponding to the mask pattern, and the substrate is processed through the exposure pattern layer. It is.

  Note that the requirements of the above-described embodiments and modifications can be combined as appropriate. Some components may not be used. In addition, as long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

  DESCRIPTION OF SYMBOLS 1 ... Mask stage, 2 ... Substrate stage, 5 ... Control apparatus, 5R ... Memory | storage device, 9 ... Alignment system, EL ... Exposure light, EX ... Exposure apparatus, GA ... Outer edge area, m1-m6 ... Alignment mark, P ... Substrate , S1 ... first side, S2 ... second side, S3 ... third side, S4 ... fourth side, UA ... internal region

Claims (13)

An exposure method for exposing a substrate with exposure light,
Obtaining information regarding deformation of the first portion of the outer edge region including the edge of the substrate;
Obtaining information on the deformation of the second part of the outer edge region different from the first part based on the obtained result and a predetermined relational expression;
Exposing the substrate based on the acquired information relating to the deformation of the first part and the second part.   The exposure method according to claim 1, wherein the first portion is arranged on each of one side and the other side with respect to a center of the substrate.   The exposure method according to claim 1, wherein the first portion is long in a first direction, and the second portion is long in a second direction intersecting the first direction. The outer shape of the substrate is a rectangle,
The first portion includes two sides of the substrate that are long in the first direction;
The exposure method according to claim 1, wherein the second portion includes two sides of the substrate that are long in the second direction. The substrate has a plurality of alignment marks arranged in the first portion,
5. The exposure method according to claim 1, wherein acquiring information related to deformation of the first portion includes measuring the alignment mark.   The exposure method according to claim 5, wherein the alignment mark is displaced according to deformation of an outer edge region of the substrate. A plurality of the relational expressions corresponding to the deformation of the first part are prepared in advance,
The exposure method according to claim 1, wherein a predetermined relational expression is selected from a plurality of relational expressions in accordance with the deformation state of the first portion.   The exposure method according to claim 7, wherein the plurality of relational expressions have different orders. After obtaining information about the deformation of the outer edge region,
The exposure method according to claim 1, further comprising acquiring information related to deformation of the inner region of the substrate inside the outer edge region.   The exposure method according to claim 9, further comprising adjusting an exposure condition based on at least one of information related to deformation of the outer edge region and information related to deformation of the inner region. Exposing the substrate using the exposure method according to any one of claims 1 to 10,
Developing the exposed substrate; and a device manufacturing method. An exposure apparatus that exposes a substrate with exposure light,
A first acquisition device for acquiring information relating to deformation of the first portion of the outer edge region including the edge of the substrate;
A second acquisition device that acquires information related to deformation of the second portion of the outer edge region different from the first portion based on a result acquired by the first acquisition device and a predetermined relational expression;
An exposure apparatus that exposes the substrate based on the acquired information on the deformation of the first part and the second part. Exposing the substrate using the exposure apparatus according to claim 12;
Developing the exposed substrate. A device manufacturing method.

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