CN106164779B - Substrate board treatment - Google Patents

Substrate board treatment Download PDF

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Publication number
CN106164779B
CN106164779B CN201580018364.5A CN201580018364A CN106164779B CN 106164779 B CN106164779 B CN 106164779B CN 201580018364 A CN201580018364 A CN 201580018364A CN 106164779 B CN106164779 B CN 106164779B
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China
Prior art keywords
substrate
light
line
light beam
description
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CN201580018364.5A
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Chinese (zh)
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CN106164779A (en
Inventor
加藤正纪
奈良圭
铃木智也
渡边智行
鬼头义昭
堀正和
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Nikon Corp
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Nikon Corp
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Priority to CN201811596980.0A priority Critical patent/CN110083018A/en
Priority to CN201711113525.6A priority patent/CN107748486B/en
Publication of CN106164779A publication Critical patent/CN106164779A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

For substrate board treatment so that in such a way that the pattern that each description line of multiple delineation units is described on substrate is bonded together in the width direction of substrate with substrate to the movement of length direction each other, the width direction along substrate is configured with multiple delineation units.The reflection optical detection part of measuring device is set in each of multiple delineation units, when detecting due to the point light of projecting beam from the reflected light that the bearing surface or substrate of supporting member reflect, based on the signal exported when the reference mark of supporting member is located on the description line that multiple delineation units are respectively described from reflection optical detection part, to measure multiple configuration relations for describing lines.

Description

Substrate board treatment
Technical field
The present invention relates to the methods of adjustment of substrate board treatment, device making method and substrate board treatment.
Background technique
Currently, as substrate board treatment, it is known to the system that the specified position on sheet medium (substrate) is described Make device (for example, referring to patent document 1).In the manufacturing device recorded in patent document 1, for easily flexible in the direction of the width Flexible strip plate shape substrates detect alignment mark, thus measure the flexible of plate shape substrates, (added according to flexible amendment description position Station is set).
Existing technical literature
Patent document 1: Japanese Unexamined Patent Publication 2010-91990 bulletin
Summary of the invention
In the manufacturing device of patent document 1, substrate is carried along carry direction by one side, switches spatial modulation on one side Element (DMD:Digital Micro mirror Device), is exposed, using multiple delineation units on substrate depiction Case.In the manufacturing device of patent document 1, by by multiple delineation units by pattern adjacent in the width direction of substrate each other Engagement exposure, but the error in order to inhibit engagement to expose, and feed back and carry out to test exposure and develop generated at joint portion Pattern location error measurement result.But the though feedback procedure comprising operations such as this test exposure, development, measurements Its frequency is so also depended on, but to temporarily cease manufacturing line, not only reduces the productivity of product, it is also possible to generate the wave of substrate Take.
The scheme of the invention is being proposed in view of the above subject, even if it is intended that providing a kind of using multiple Delineation unit also can reduce pattern each other in bond pattern in the width direction of substrate and in the case where be exposed (description) Bonding error, on substrate high-precision and steadily describe large area pattern substrate board treatment, device making method And the method for adjustment of substrate board treatment.
First scheme according to the present invention provides a kind of substrate board treatment, has: supporting member, has bearing length The bearing surface of the substrate of strip of sheet is more in the width direction intersected with the length direction of the substrate on the bearing surface A position is equipped with reference mark；
Handling device moves the substrate supported by the supporting member along the length direction；Drawing apparatus, Including multiple delineation units, multiple delineation unit is thrown by the substrate or the bearing surface of the bearing surface bearing on one side The point light of irradiating light beam is scanned in the range narrower than the size in the substrate width direction on one side, can sweep along by this The description line retouched describes predetermined pattern, and the drawing apparatus is so that each description line for passing through the multiple delineation unit The pattern described on the substrate is each other as the substrate is to the movement of length direction and in the width direction of the substrate The mode being bonded together, the width direction by the multiple delineation unit along the substrate configure；Optical detection part is reflected, is set In each of the multiple delineation unit, to due to the point light for projecting the light beam from the bearing surface of the supporting member or The reflected light of the substrate reflection is detected；And measuring device, based on the reference mark for working as the supporting member The signal exported when on the description line that the multiple delineation unit is respectively described from the reflection optical detection part, to survey Measure a plurality of configuration relation for describing line.
Alternative plan according to the present invention provides a kind of device making method, uses the processing substrate of first aspect present invention Device forms the pattern on the substrate.
Third program according to the present invention provides a kind of method of adjustment of substrate board treatment, the substrate board treatment tool Standby: supporting member, pre-determined multiple positions on the bearing surface have discrete or continuous specific reference mark；It removes Shipping unit, the substrate of the bearing surface bearing defined width of the one lateral dominance supporting member, on one side by the substrate to provide Speed is carried along the length direction intersected with the width direction；Drawing apparatus has multiple delineation units, multiple description Unit can along make the light beam for being projeced into the substrate point light in the range narrower than the width of the substrate described wide Line is described obtained from scanning up by degree side, and by defined pattern plotter on the substrate, the drawing apparatus is so that logical Pattern that the multiple delineation unit is respectively described on the substrate is crossed each other as the substrate is to the length direction Carry and in the mode that the width direction of the substrate is bonded together, will be adjacent in the width direction each other described in retouch Line drawing separates defined compartment of terrain configuration in the longitudinal direction；And multiple reflection optical detection parts, to because described in coming from The irradiation of multiple respective light beams of delineation unit and from the bearing surface of the supporting member generate reflected light detected, The method of adjustment of the substrate board treatment is characterised by comprising: scanning step, so that the reference mark is come by described The mode on the description line that multiple delineation units are respectively described makes the supporting member and the opposite shifting of the drawing apparatus It is dynamic, reference mark described in the point optical scanning using the light beam；Detecting step, by the reflection optical detection part to because of the light The scanning of beam and detected from the reflected light that the reference mark generates, obtain corresponding with reference mark detection and believe Number；And adjustment information step is found out, it is found out and a plurality of configuration status or each other for describing line based on the detection signal The corresponding adjustment information of configuration error, be based on the adjustment information, adjust the institute that the multiple delineation unit is respectively described State the description state of pattern.
Fourth program according to the present invention, provides a kind of substrate board treatment, makes the light for being carried out intensity modulated on one side The point light of beam carries out main scanning along defined description line on substrate, on one side in the direction intersected with the description line to the light Beam and the substrate carry out subscan, thus describe predetermined pattern on the substrate, the substrate board treatment has: bearing Component has the bearing surface for supporting the substrate；Handling device makes the substrate supported as the supporting member described in The direction of subscan is mobile；Pulsed laser source is made with repeating the pulsed light beam in luminous frequency Fz output ultraviolet wavelength domain For the light beam；And delineation unit, the pulsed light beam from the pulsed laser source should be depicted in described retouch by having basis Pattern on line drawing and carry out the modulator of intensity modulated, make that one-dimensionally deflection scanning is swept by the light beam of the modulators modulate It retouches optical system and the light beam of the deflection scanning is projected into the light beam projection optics system to the substrate, retouched by described The length of line drawing is set as LBL, the point light of the light beam is set as Ts, by described light edge in the sweep time of the length LBL Size on the direction for describing line when being set as Xs, by the luminous frequency Fz of the pulsed laser source be set as meeting Fz >= The relationship of LBL/ (TsXs).
The effect of invention
According to the solution of the present invention, the width direction that being capable of providing can reduce using multiple delineation units in substrate engages Bonding error when pattern is exposed, appropriately to carry out the processing substrate dress of the description based on multiple delineation units to substrate It sets, the method for adjustment of device making method and substrate board treatment.
Detailed description of the invention
Fig. 1 is the integrally-built figure for indicating the exposure device (substrate board treatment) of first embodiment.
Fig. 2 is the perspective view for indicating the configuration of exposure device major part of Fig. 1.
Fig. 3 is the figure for indicating the configuration relation between the aligming microscope on substrate and description line.
Fig. 4 is the figure for indicating the structure of rotating cylinder and drawing apparatus of the exposure device of Fig. 1.
Fig. 5 is the plan view for indicating the configuration of exposure device major part of Fig. 1.
Fig. 6 is the perspective view for indicating the structure of branch's optical system of the exposure device of Fig. 1.
Fig. 7 is the figure for indicating the configuration relation of multiple scanners of exposure device of Fig. 1.
Fig. 8 is that optics of the explanation for the offset of description line caused by eliminating due to the toppling over for reflecting surface of scanner is constituted Figure.
Fig. 9 is the perspective view for indicating aligming microscope on substrate, the configuration relation for describing line and encoder head.
Figure 10 is the perspective view for indicating the surface structure of the rotating cylinder of exposure device of Fig. 1.
Figure 11 is the explanatory diagram for describing the positional relationship between line and depicting pattern indicated on substrate.
Figure 12 is the explanatory diagram for indicating light beam spot and describing the relationship between line.
Figure 13 is to simulate obtaining intensity distribution caused by due to the lap of the light beam spot of two pulsed quantities on substrate The chart of variation.
Figure 14 is flow chart related with the method for adjustment of the exposure device of first embodiment.
Figure 15 is the reference pattern for schematically showing rotating cylinder and the explanatory diagram for describing the relationship between line.
Figure 16 is to schematically show the reflected light from the reference pattern of spin in future rotating cylinder with the photoelectric transfer of bright-field light The explanatory diagram of the signal of sensor output.
Figure 17 is to schematically show the reflected light of the reference pattern of spin rotating cylinder in the future with the photoelectric sensing of dark field light The explanatory diagram of device.
Figure 18 is to schematically show the reflected light from the reference pattern of spin in future rotating cylinder with the photoelectric transfer of dark field light The explanatory diagram of the signal of sensor output.
Figure 19 is the explanatory diagram for schematically showing the mutual positional relationship of the reference pattern of rotating cylinder.
Figure 20 is the explanatory diagram for schematically showing multiple opposite positional relationships for describing line.
Figure 21 is the item for schematically showing description line contained in the moving distance and moving distance of substrate per unit time The explanatory diagram of relationship between number.
Figure 22 is the explanatory diagram for schematically showing the pulsed light synchronous with the system clock of light-pulse generator.
Figure 23 is the flow chart for indicating the device making method of each embodiment.
Specific embodiment
Mode for carrying out the present invention (embodiment) is described in detail referring to attached drawing.The present invention is not by below The content that embodiment is recorded limits.In addition, can be easy to think comprising those skilled in the art in the structural element recorded below Structural element arrive and substantially the same.In turn, the structural element recorded below can be appropriately combined.In addition, not departing from In the range of spirit of the invention, various omissions, displacement or the change of structural element can be carried out.
First embodiment
Fig. 1 is the integrally-built figure for indicating the exposure device (substrate board treatment) of first embodiment.First implements The substrate board treatment of mode is the exposure device EX for implementing exposure-processed to substrate P, and exposure device EX is loaded to exposure Substrate P afterwards is implemented various processing and is manufactured in the device inspection apparatus 1 of device.Firstly, being said to device inspection apparatus 1 It is bright.
< device inspection apparatus >
Device inspection apparatus 1 is production line (flexible display production line) of the manufacture as the flexible display of device.Make For flexible display, such as have organic el display etc..The device inspection apparatus 1 is so-called roll-to-roll (Roll to Roll) Mode, that is, the substrate P is sent out with roller from the supply (not shown) that the strip substrate P of flexible (flexibility) is wound into roll, right After the substrate P of submitting continuously implements various processing, treated substrate P as flexible devices is wound in recycling (not shown) Use roller.In the device inspection apparatus 1 of first embodiment, following example is shown: by the substrate P as film-form sheet material It is sent out from supply with roller, the substrate P sent out from supply roller successively passes through processing unit U1, exposure device EX, processing unit U2 Until being wound in recycling roller.Here, explanation becomes the substrate P of the process object of device inspection apparatus 1.
Substrate P uses the foil (foil) etc. constituted such as resin film, the metal or alloy by stainless steel.It is thin as resin The material of film, such as contain one or more of following resin, that is, polyvinyl resin, acrylic resin, polyester tree Rouge, Ethylene Vinyl Ester Copolymers resin, Corvic, celluosic resin, polyamide, polyimide resin, poly- carbon Acid ester resin, polystyrene resin, vinyl acetate resin.
For substrate P, it is expected that the obvious little material of selected such as thermal expansion coefficient, so that for example can substantially neglect Depending on the deflection generated because being heated in the various processing implemented to substrate P.Thermal expansion coefficient can be for example, by will be inorganic Filler is mixed in resin film and is set as smaller than the threshold value for corresponding to technological temperature etc..Inorganic filler is for example also possible to oxygen Change titanium, zinc oxide, aluminium oxide, silica etc..In addition, substrate P can be with float the manufactures such as preparation method with a thickness of 100 μm or so The individual layers of very thin glass are also possible to be bonded laminated body made of above-mentioned resin film or foil etc. on the very thin glass.
The substrate P constituted in this way is by being wound into roll into roller, the supply are installed in device system with roller for the supply It makes in system 1.The device inspection apparatus 1 for being equipped with supply roller repeats the substrate P sent out from supply roller to length direction Execute the various processing for manufacturing device.Therefore, in substrate P after treatment, multiple electronic device (display panels, printing Substrate etc.) pattern with continuous state is formed at regular intervals along its length.That is, the substrate P sent out from supply with roller As compound substrate.In addition, substrate P can also first pass through in advance as defined in pre-treatment keep its surface modified and activate or It can also be formed with the small next door construction (sag and swell formed with stamped method) for accurate composition on the surface.
Substrate P that treated is recovered as recycling with roller and being wound into roll.Recycling is installed in roller not to be schemed On the cutter device shown.The cutter device of recycling roller is installed by the way that substrate P (is cut by each Device singulation by treated Cut), and multiple devices are made.For the size of substrate P, for example, the size of width direction (direction as short side) is 10cm~2m or so, the size of length direction (direction as long side) are 10m or more.In addition, the size of substrate P is not limited to State size
Then, illustrate device inspection apparatus 1 referring to Fig.1.Device inspection apparatus 1 have processing unit U1, exposure device EX, And processing unit U2.In addition, in Fig. 1, become X-direction, Y-direction and the orthogonal orthogonal coordinate system of Z-direction.X-direction is in level It is to pass through exposure device EX from processing unit U1 towards the direction of processing unit U2 in face.Y-direction be in the horizontal plane with X-direction Orthogonal direction is the width direction of substrate P.Z-direction be the direction (vertical direction) orthogonal with X-direction and Y-direction, the face XY with The setting face E for being provided with the manufacturing line of exposure device EX is parallel.
The processing (pre-treatment) of process before processing unit U1 carries out the substrate P for being exposed processing by exposure device EX. The substrate P for carrying out pre-treatment is sent to exposure device EX by processing unit U1.At this point, the substrate P for being sent to exposure device EX is Its surface is formed with substrate (sensitive substrate) P of photonasty functional layer (photosensitive layer).
Here, photonasty functional layer is to become layer (film) by dry coated in substrate P as solution.Typically Photonasty functional layer is photoresist, as the unwanted material of development treatment, there is the parent to the part irradiated by ultraviolet light The modified photonasty silane coupling agent (SAM) of lyophobicity exposes the photosensitive of plating also former base in the part irradiated by ultraviolet light Property reducing material etc..When using photonasty silane coupling agent as photonasty functional layer, due to being exposed by ultraviolet light in substrate P The pattern part of light is modified as lyophily from lyophobicity, therefore electric conductivity oil is selectively applied on the part for becoming lyophily Ink (ink containing the conductive nanometers particle such as silver or copper), forms pattern layer.Use photonasty reducing material as photosensitive When sexual function layer, since plating also former base is exposed in the pattern part by ultraviolet exposure in substrate P, after exposure, Substrate P is impregnated in the stipulated time in the plating solution containing palladium ion etc. immediately, the pattern layer that (precipitation) uses palladium is consequently formed.
Exposure device EX depicts the various circuits of such as display pannel to the substrate P come from processing unit U1 supply Or the pattern of various wirings etc..It is chatted after details, exposure device EX, which is utilized, to be made to project respectively from multiple delineation unit UW1~UW5 To substrate P light beam LB (hereinafter also referred to as describe light beam LB.) respectively along defined scanning direction be scanned obtained from it is more A description line LL1~LL5, exposes predetermined pattern in substrate P.
Processing unit U2, which is received, has carried out the substrate P of exposure-processed in exposure device EX, the place of process after carrying out to substrate P It manages (post-processing).In the case where the photonasty functional layer of substrate P is photoresist, processing unit U2 carries out the glass of substrate P Baking processing, development treatment, cleaning treatment, drying process etc. after glass transition temperature is below.In addition, in the photosensitive of substrate P Sexual function layer be photonasty plating reducing material in the case where, processing unit U2 then carry out electroless plating processing, cleaning treatment, Be dried etc..In turn, in the case where the photonasty functional layer of substrate P is photonasty silane coupling agent, U2 pairs of processing unit The part as lyophily in substrate P carries out the selectivity coating processing of liquid ink, drying process etc..Via this processing Device U2 forms the pattern layer of device in substrate P.
< exposure device (substrate board treatment) >
Then, referring to Fig.1~Figure 10 illustrates exposure device EX.Fig. 2 is to indicate that the major part of the exposure device of Fig. 1 is matched The perspective view set.Fig. 3 is the figure for indicating the configuration relation between the aligming microscope on substrate and description line.Fig. 4 is to indicate Fig. 1 Exposure device rotating cylinder and drawing apparatus (delineation unit) structure figure.Fig. 5 is to indicate the main portion of the exposure device of Fig. 1 The plan view of the configuration divided.Fig. 6 is the perspective view for indicating the structure of branch's optical system of the exposure device of Fig. 1.Fig. 7 is to indicate The figure of the configuration relation of scanner in multiple delineation units of the exposure device of Fig. 1.Fig. 8 is explanation for eliminating because of scanner Toppling over for reflecting surface and caused by description line offset optics constitute figure.Fig. 9 is to indicate aligming microscope on substrate and retouch The perspective view of the configuration relation of the encoder head of line drawing.Figure 10 is the rotating cylinder surface structure for indicating the exposure device of Fig. 1 The perspective view of an example.
As shown in Figure 1, exposure device EX is the description exposure of the exposure device, so-called no light shield mode without using light shield Device, present embodiment, be by by substrate P on one side with fixing speed continuously to carry direction (length direction) carry, while The point light of light beam LB will be described along regulation scanning direction (width direction of substrate P) high-velocity scanning, thus the surface of substrate P into Row is described, and the direct description exposure device of the by-line mode of predetermined pattern is formed in substrate P.
As shown in Figure 1, exposure device EX have drawing apparatus 11, substrate conveying mechanism 12, aligming microscope AM1, AM2, Control unit 16.Drawing apparatus 11 has multiple delineation unit UW1~UW5.Moreover, drawing apparatus 11 passes through multiple delineation units UW1~UW5, by also tight as the top of the outer peripheral surface of the cylindric rotating cylinder DR of a part of substrate conveying mechanism 12 The a part for the substrate P that the state thickly supported is carried describes defined pattern.Substrate conveying mechanism 12 will be from preceding process Manage device U1 carry come substrate P with defined speed backward process processing unit U2 carry.Aligming microscope AM1, AM2 are Make the pattern and substrate P relative alignment (alignment) in substrate P to be depicted in, and detect be previously formed in substrate P to fiducial mark Note etc..Each section that exposure device EX is controlled comprising the control unit 16 including computer, microcomputer, CPU, FPGA etc., makes Each section executes processing.Control unit 16 is also possible to part or all of the host control device of control device manufacture system 1. In addition, control unit 16 is generalized control device control.Host control device is also possible to for example manage the master computer of production line Etc. other devices.
In addition, as shown in Fig. 2, exposure device EX has at least one of bearing drawing apparatus 11 and substrate conveying mechanism 12 The device frame 13 of point (rotating cylinder DR etc.), be equipped on the device frame 13 detection rotating cylinder DR rotary angle position and Rotary light beam point light SP position detecting mechanism (Fig. 4 and the encoder shown in Fig. 9 of the displacement of rotation speed, rotary axis direction etc. Read head etc.) and Fig. 1 (or Fig. 3, Fig. 9) shown in aligming microscope AM1, AM2 etc..Moreover, as shown in Figure 4, Figure 5, being filled in exposure Set the light supply apparatus CNT for being provided with and being projected as the ultraviolet laser (pulsed light) for describing light beam LB in EX.Exposure device EX will The description light beam LB projected from light supply apparatus CNT is distributed to substantially uniform light quantity (illumination) is constituted the multiple of drawing apparatus 11 Each of delineation unit UW1~UW5.
As shown in Figure 1, exposure device EX is accommodated in tempering room EVC.Tempering room EVC is via the vibrationproof list being passively or actively First SU1, SU2 and be arranged on setting face (ground) E of manufacturing plant.Anti-vibration unit SU1, SU2 is located on the E of setting face, is reduced Vibration from setting face E.Tempering room EVC inhibits the substrate P carried in inside because of temperature by the way that inside is maintained at predetermined temperature Change in shape caused by spending.
The substrate conveying mechanism 12 of exposure device EX successively has marginal position control from the carry direction upstream side of substrate P Device EPC processed, driven roller DR4, tension adjustment roller RT1, rotating cylinder (cylinder roller) DR, tension adjustment roller RT2, driven roller DR6 and Driven roller DR7.
The substrate P that marginal position controller EPC adjustment is carried from processing unit U1 is in the position of width direction (Y-direction). Marginal position controller EPC makes substrate P fine motion in the width direction, corrects substrate P in the position of width direction, so that filling from processing End (edge) position for setting the width direction for the substrate P that U1 is sent converges on ± ten several μm~tens of μm relative to target position The range of left and right.
The driven roller DR4 of method of clamping clamps the front and back sides that the substrate P come is carried from marginal position controller EPC on one side It rotates on one side, substrate P is sent to the downstream side of carry direction, as a result, carry substrate P to rotating cylinder DR.Rotating cylinder DR is by base It is supported in a manner of being close to by the part of pattern exposure on plate P from rotation centerline (rotary shaft) AX2 extended along Y-direction It on cylindric outer peripheral surface with predetermined radius, and is rotated around rotation centerline AX2, thus transports substrate P along its length.
In order to rotate this rotating cylinder DR around rotation centerline AX2, it is equipped with and rotation center in the two sides of rotating cylinder DR Line AX2 coaxial axle portion Sf2, as shown in Fig. 2, axle portion Sf2 is pivotally supported via bearing in device frame 13.Axle portion Sf2 is assigned Give the turning moment from driving source (not shown) (motor and/or reduction gear etc.).In addition, will include rotation centerline The face parallel with the face YZ is set as median plane p3 including AX2.
The substrate P that two groups of tension adjustment roller RT1, RT2 are supported on rotating cylinder DR to winding assigns defined tension.Two groups of folders It holds formula driven roller DR6, DR7 and separates specified interval configuration in the carry direction of substrate P, assign regulation to the substrate P after exposure Relaxation (ampleness) DL.Driven roller DR6 clamps the upstream side for the substrate P carried and rotation, the substrate that driven roller DR7 clamping is carried The downstream side of P and rotation as a result, carry substrate P to processing unit U2.At this point, substrate P is due to being endowed loose DL, so The variation that the conveying speed of the substrate P caused by conveyance direction downstream side compared with driven roller DR6 can be absorbed, can block The influence that the exposure-processed of substrate P is generated because transporting the variation of speed.
To which substrate conveying mechanism 12 passes through marginal position controller for carrying the substrate P of coming from processing unit U1 EPC adjusts the position in width direction.Substrate conveying mechanism 12 will have adjusted the base of the position of width direction by driven roller DR4 Plate P is carried to tension adjustment roller RT1, and the substrate P for having passed through tension adjustment roller RT1 is carried to rotating cylinder DR.Substrate conveying Structure 12 by rotating rotating cylinder DR, carry to tension adjustment roller RT2 by the substrate P that will bear upon rotating cylinder DR.Substrate conveying The substrate P for being carried to tension adjustment roller RT2 is carried to driven roller DR6 by structure 12, and the substrate P for being carried to driven roller DR6 is carried To driven roller DR7.Then, substrate conveying mechanism 12 assigns relaxation DL to substrate P by driven roller DR6 and driven roller DR7 on one side, Substrate P is carried to processing unit U2 on one side.
Referring again to Fig. 2, illustrate the device frame 13 of exposure device EX.In Fig. 2, become X-direction, Y-direction and Z-direction Orthogonal orthogonal coordinate system is orthogonal coordinate system identical with Fig. 1.
As shown in Fig. 2, device frame 13 successively has main body frame 21, as supporting device from the lower side of Z-direction Three point seats 22, first optical platform 23, mobile mechanism 24, the second optical platform 25.Main body frame 21 is via Anti-vibration unit SU1, SU2 are set to the part on the E of setting face.Main body frame 21 is rotatably pivotally supported (bearing) rotating cylinder DR and tension adjustment Roller RT1 (not shown), RT2.First optical platform 23 is located at the upper side of the vertical direction of rotating cylinder DR, sets via three point seats 22 It is placed in main body frame 21.Three point seats 22 are with 3 bearing dot point first optical platforms 23, the Z-direction of adjustable each supporting-point Position (height and position).Therefore, three point seats 22 can be by the inclination tune of the flat surface relative level of first optical platform 23 It is whole to be tilted for regulation.In addition, when assembling device frame 13, it can be in the face XY along X between main body frame 21 and three point seats 22 Direction and Y-direction carry out position adjustment.On the other hand, after being assembled with device frame 13, main body frame 21 and three point seats 22 it Between become in the face XY fixed state (rigid state).
Second optical platform 25 is set to the upper side of the vertical direction of first optical platform 23, is arranged via mobile mechanism 24 In first optical platform 23.The flat surface of second optical platform 25 is parallel with the flat surface of first optical platform 23.Second Multiple delineation unit UW1~UW5 of drawing apparatus 11 are provided on optical platform 25.Mobile mechanism 24 can be by the first optics In the state that platform 23 and the respective flat surface of the second optical platform 25 are kept into parallel, as defined in extending in the vertical direction Centered on rotary shaft I, rotate the second optical platform 25 critically a little relative to first optical platform 23.Its rotating range is for example It is ± hundreds of milliradians or so relative to base position, angle initialization can be carried out with the resolution ratio of 1~number milliradian by becoming Construction.It is kept in addition, mobile mechanism 24 also has by first optical platform 23 and the respective flat surface of the second optical platform 25 In the state of parallel, make the second optical platform 25 in X direction relative to first optical platform 23 and at least one party of Y-direction essence It is thickly displaced mobile mechanism a little, rotary shaft I can be made micro- with the resolution ratio of μm grade from base position to X-direction or Y-direction Width displacement.Rotary shaft I is extended in the vertical direction in median plane p3 in base position, and is passed through and be wound in rotating cylinder DR Substrate P surface (along the curved description face of periphery) in regulation point (midpoint of the width direction of substrate P) (referring to figure 3).It is moved by making the second optical platform 25 rotate or be displaced relative to first optical platform 23 using this mobile mechanism 24, energy It is enough integrally to adjust multiple delineation unit UW1~UW5 relative to rotating cylinder DR or the position for the substrate P for being wound in rotating cylinder DR.
Then, illustrate light supply apparatus CNT referring to Fig. 5.Light supply apparatus CNT is set to the main body frame 21 of device frame 13 On.Light supply apparatus CNT projects the laser as description light beam LB for being projeced into substrate P.Light supply apparatus CNT has light source, the light Light, the i.e. photolytic activity that the provision wavelengths domain of the exposure for the photonasty functional layer being suitable in substrate P is projected in source acts on strong ultraviolet light The light in domain.As light source, it is able to use and is for example gone out with continuous oscillation or go out YAG's with several KHz~several hundred MHz or so impulse hunting The laser light source of third higher hamonic wave laser (wavelength 355nm).
Light supply apparatus CNT has laser generating part CU1 and wavelength conversion section CU2.Laser generating part CU1 has laser source OSC, fiber amplifier FB1, FB2.Laser generating part CU1 projects fundamental wave of laser Ls.Fiber amplifier FB1, FB2 are put by optical fiber Big fundamental wave of laser Ls.The fundamental wave of laser Lr of amplification is injected wavelength conversion section CU2 by laser generating part CU1.In wavelength conversion section CU2 Equipped with wavelength converting optical element, spectroscope or polarising beam splitter, prism etc., by using these light (wavelength) selectors Part, to take out the third higher hamonic wave laser i.e. laser of wavelength 355nm (describing light beam LB).At this point, making to issue swashing for seed light Light source OSC is equal to step progress pulse with system frequency and lights, and light supply apparatus CNT issues the description light beam LB of wavelength 355nm as a result, As the pulsed light of several KHz~hundreds of MHz or so.In addition, using this fiber amplifier, it can be according to sharp The mode of the pulsed drive of light source OSC, by the control of the fluorescent lifetime of 1 pulse of the laser (Lr and LB) of final output at picosecond Grade.
In addition, as light source, it can be using such as the mercury vapor lamp etc. of the bright line (g line, h line, i line) with ultraviolet domain Lamp source has laser diode, light emitting diode (LED) of oscillation peak etc. solid in wavelength 450nm ultraviolet domain below Body light source issues the KrF excimer laser (wavelength 248nm) of extreme ultraviolet light (DUV light), ArF excimer laser (wavelength 193nm), the gas laser sources such as XeC1 excimer laser (wavelength 308nm).
Here, as be described hereinafter, the description light beam LB projected from light supply apparatus CNT is via in each delineation unit UW1~UW5 Polarising beam splitter PBS be projeced into substrate P.In general, polarising beam splitter PBS becomes the rectilinearly polarized light of S polarized light Light beam reflection, and become the light beam transmission of the rectilinearly polarized light of P-polarized light.Therefore, it in light supply apparatus CNT, is incident to partially The description light beam LB of vibration beam splitter PBS is preferably the laser for projecting the light beam for becoming rectilinearly polarized light (S polarized light).In addition, Laser is due to energy density height, so properly can ensure to be projeced into the illumination of the light beam of substrate P.
Next, being illustrated also referring to drawing apparatus 11 of the Fig. 3 to exposure device EX.Drawing apparatus 11 is using multiple The so-called Multibeam drawing apparatus 11 of delineation unit UW1~UW5.The drawing apparatus 11 will be projected from light supply apparatus CNT Describe light beam LB branch into it is a plurality of, and by multiple description light beam LB of branch along in the substrate P of such as Fig. 3 it is a plurality of (first reality Apply is, for example, 5 in mode) describe line LL1~LL5 difference optically focused as small point light (several μm of diameters) and is scanned.Then, Drawing apparatus 11 is by the pattern described in substrate P respectively using multiple description line LL1~LL5 each other along the width side of substrate P To being engaged.Firstly, referring to Fig. 3 explanation by scanning multiple description light beam LB shapes in substrate P using drawing apparatus 11 At a plurality of description line LL1~LL5 scanning track of light (point).
As shown in figure 3, a plurality of describe line LL1~LL5 across median plane p3 along the arranged circumferentially at 2 column of rotating cylinder DR.? In the substrate P of direction of rotation upstream side, configures the first of odd-numbered in parallel with Y-axis and describe line LL1, third description line LL3 and the 5th describes line LL5.In the substrate P in direction of rotation downstream side, the second of even-numbered is configured in parallel with Y-axis Describe line LL2 and the 4th and describes line LL4.
It is each describe line LL1~LL5 along the width direction (Y-direction) of substrate P, i.e. along the rotation centerline of rotating cylinder DR AX2 is formed substantially in parallel, shorter than the length of substrate P in the direction of the width.For rigorous, each description line LL1~LL5 can phase For the rotation centerline AX2 of rotating cylinder DR extending direction (axial direction or width direction) with defined angle tilt so that The connecing by the obtained pattern of a plurality of description line LL1~LL5 when transporting substrate P using substrate transport mechanism 12 with reference speed Closing error becomes minimum.
The first of odd-numbered describes line LL1, third describes line LL3 and the 5th and describes line LL5 in rotating cylinder DR The spaced up specified interval configuration in the heart line side AX2.In addition, the second description line LL2 of even-numbered and the 4th description line LL4 exist The spaced up specified interval configuration in the center line side AX2 of rotating cylinder DR.At this point, second describes line LL2 on the direction center line AX2 Configuration describes line LL1 first and third is described between line LL3.Equally, third is described line LL3 and is matched on the direction center line AX2 The second description line LL2 and the 4th is placed in describe between line LL4.4th description line LL4 is configured at third on the direction center line AX2 Describe line LL3 and the 5th to describe between line LL5.Moreover, the first~the 5th description line LL1~LL5 is configured to cover and is depicted in base Entire width in the width direction (axis direction) of exposure area A7 on plate P.
Describe line LL1 along the first of odd-numbered, third describes the description that line LL3 and the 5th describes line LL5 scanning The scanning direction of the point light of light beam LB is one-dimensional square, is the same direction.In addition, describing line along the second of even-numbered The scanning direction that LL2 and the 4th describes the point light of the description light beam LB of line LL4 scanning is one-dimensional square, is the same direction.At this point, Along odd-numbered describe line LL1, LL3, LL5 scanning description light beam LB point light scanning direction (+Y direction) and along The scanning direction (-Y direction) such as arrow institute in Fig. 3 of the point light of the description light beam LB for describing line LL2, LL4 scanning of even-numbered Show, is opposite direction.This is because delineation unit UW1~UW5 is respectively identical structure, and the delineation unit of odd-numbered and The delineation unit of even-numbered rotates 180 ° in the face XY and configures in opposite directions, and makes the work set on each delineation unit UW1~UW5 It is rotated in the same direction for the rotary polygon mirror of optical beam scanner.Therefore, from the carry direction of substrate P, odd-numbered Description line LL3, LL5 description line LL2, LL4 for describing starting position and even-numbered description starting position in the Y direction It is adjacent (or consistent) with the diameter dimension of light error below, similarly, the description knot of description line LL1, LL3 of odd-numbered The description end position of description line LL2, LL4 of beam position and even-numbered are below with the diameter dimension of light in the Y direction Error is adjacent (or consistent).
As mentioned above, description line LL1, LL3, LL5 of odd-numbered are respectively with the rotation in substrate P with rotating cylinder DR Turn the substantially parallel mode of center line AX2 and is configured to a column in the width direction of substrate P.Moreover, the description line of even-numbered LL2, LL4 are respectively in mode substantially parallel with the rotation centerline AX2 of rotating cylinder DR in substrate P in the width side of substrate P It is configured to a column upwards.
Secondly, illustrating drawing apparatus 11 referring to Fig. 4~Fig. 7.Drawing apparatus 11 have above-mentioned multiple delineation unit UW1~ UW5, by the description light beam LB branch from light supply apparatus CNT and be oriented to delineation unit UW1~UW5 branch optical system SL, Calibration detection system 31 for being calibrated.
Branch optical system SL the description light beam LB projected from light supply apparatus CNT is branched into it is a plurality of, and by the more of branch Item describes light beam LB and is individually directed multiple delineation unit UW1~UW5.Branch optical system SL has and will penetrate from light supply apparatus CNT Description light beam LB out branches into 2 the first optical systems 41, describes light by the side that the first optical system 41 branches out The third of the second optical system 42, another party's description light beam LB injection branched out by the first optical system 41 that beam LB is injected Optical system 43.In addition, being equipped in the first optical system 41 of branch optical system SL in the axis of travel with description light beam LB Make to describe the traversing pattern displacement mechanism 44 of light beam LB two dimension in orthogonal face, in the third optical system of branch optical system SL Being equipped in 43 makes to describe the traversing pattern displacement mechanism 45 of light beam LB two dimension.For branch optical system SL, light supply apparatus CNT A part of side is set to main body frame 21, and on the other hand, another part of the side delineation unit UW1~UW5 is set to the second light Learn platform 25.
First optical system 41 has 1/2 wave plate 51, polariscope (polarising beam splitter) 52, diffuser (beam Diffuser) the 53, first reflecting mirror 54, the first relay lens 55, the second relay lens 56, pattern displacement mechanism 44, second are anti- Penetrate mirror 57, third reflecting mirror 58, the 4th reflecting mirror 59, the first beam splitter 60.In addition, not readily understood from Fig. 4, Fig. 5, these are each Therefore the configuration relation of component is illustrated also referring to the perspective view of Fig. 6.
As shown in fig. 6, the description light beam LB projected from light supply apparatus CNT to +X direction injects 1/2 wave plate 51.1/2 wave plate 51 can rotate in the plane of incidence for describing light beam LB.The direction of polarized light of the description light beam LB of 1/2 wave plate 51 is injected to correspond to Defined direction of polarized light in the rotation position (angle) of 1/2 wave plate 51.The description light beam LB for having passed through 1/2 wave plate 51 is injected Polariscope 52.Polariscope 52 makes the light ingredient transmission for describing the defined direction of polarized light contained in light beam LB on the other hand The light ingredient of direction of polarized light other than it is reflected to +Y direction.Therefore, the intensity of the description light beam LB reflected by polariscope 52 Can collaborating by 1/2 wave plate 51 and polariscope 52, be adjusted according to the rotation position of 1/2 wave plate 51.
Diffuser (ligh trap) is irradiated in from a part (should not light ingredient) for crossing the description light beam LB that polariscope 52 transmits 53.Diffuser 53 absorbs a part of light ingredient of the description light beam LB injected, and the light ingredient is inhibited to leak into outside.In turn, exist To when describing the various optical systems that are passed through of light beam LB and being adjusted operation, due to laser power in the state of maximum power It is too strong and dangerous, so being also used for changing 1/2 wave in a manner of making diffuser 53 absorb the most light ingredient for describing light beam LB The rotation position (angle) of piece 51 makes the power towards the description light beam LB of delineation unit UW1~UW5 substantially decay.
+X direction is reflexed to by the first reflecting mirror 54 by the description light beam LB that polariscope 52 reflexes to +Y direction, via first Relay lens 55 and the second relay lens 56 inject pattern displacement mechanism 44, reach the second reflecting mirror 57.
First relay lens 55 makes the description light beam LB (substantially parallel light beam) from light supply apparatus CNT restrain and be formed Beam waist, the second relay lens 56 make the description light beam LB dissipated after convergence become collimated light beam again.
As shown in fig. 6, pattern displacement mechanism 44 includes 2 along direction of travel (+X direction) configuration for describing light beam LB Planopaallel plate (quartz), a side of the planopaallel plate are arranged to tilt around the axis parallel with Y-axis, another planopaallel plate It is arranged to tilt around the axis parallel with Z axis.According to the tilt angle of each planopaallel plate, it is traversing in the face ZY to describe light beam LB And it is projected from pattern displacement mechanism 44.
Later, describe light beam LB and -Y direction is reflexed to by the second reflecting mirror 57, reach third reflecting mirror 58, then by third Reflecting mirror 58 reflexes to -Z direction and reaches the 4th reflecting mirror 59.By the 4th reflecting mirror 59, describes light beam LB and be reflected onto+Y Direction and inject the first beam splitter 60.First beam splitter 60 reflects the part light quantity ingredient for describing light beam LB simultaneously to -X direction It is oriented to the second optical system 42, and remaining the light quantity ingredient for describing light beam LB is oriented to third optical system 43.In this implementation In the case where mode, be directed to after the description light beam LB of the second optical system 42 be distributed in 3 delineation unit UW1, UW3, UW5, the description light beam LB for being directed to third optical system 43 are distributed in 2 delineation units UW2, UW4 later.Therefore, first The reflectivity of the preferred light divisional plane of beam splitter 60 and the ratio of transmissivity are 3:2 (reflectivity 60%, transmissivity 40%), but not must It must be this manner it is also possible to be 1:1.
Here, third reflecting mirror 58 and the 4th reflecting mirror 59 separate specified interval on the rotary shaft I of mobile mechanism 24 and set It sets.That is, being set by the center line of the reflection of third reflecting mirror 58 and the description light beam LB (collimated light beam) towards the 4th reflecting mirror 59 Determine at consistent with rotary shaft I (coaxial at 21).
In addition, the structure until comprising the light supply apparatus CNT including third reflecting mirror 58 is (in the Z-direction upper side of Fig. 4 The part surrounded by double dot dash line) it is set to 21 side of main body frame, on the other hand, retouched to comprising multiple including the 4th reflecting mirror 59 Structure (in the part that the Z-direction lower side of Fig. 4 is surrounded by double dot dash line) until drawing unit UW1~UW5 is set to the second optics 25 side of platform.Therefore, because third reflecting mirror 58 and the 4th reflecting mirror 59 are arranged to even if making the first light by mobile mechanism 24 Learn platform 23 and 25 relative rotation of the second optical platform and describe light beam LB also can be with rotary shaft I coaxially through so from the 4th The optical path of the description light beam LB of 59 to the first beam splitter 60 of reflecting mirror will not change.Therefore, even if making the by mobile mechanism 24 Two optical platforms 25 are rotated relative to first optical platform 23, also can will be from the light supply apparatus CNT that 21 side of main body frame is arranged in The description light beam LB of injection is appropriate and steadily guides to the multiple delineation unit UW1~UW5 for being set to 25 side of the second optical platform.
Second optical system 42 will describe light beam LB branch by the one of 60 branch of the first beam splitter of the first optical system 41 It is oriented to delineation unit UW1, UW3, UW5 of aftermentioned odd-numbered.Second optical system 42 has 61, second points of the 5th reflecting mirror Beam device 62, third beam splitter 63, the 6th reflecting mirror 64.
The description light beam LB of -X direction is reflexed to by the 5th reflecting mirror by the first beam splitter 60 of the first optical system 41 61 reflect to -Y direction, inject the second beam splitter 62.The description light beam LB of the second beam splitter 62 is injected, part of it is reflected To -Z direction, it is oriented to 1 delineation unit UW5 of odd-numbered (referring to Fig. 5).The description light transmitted from the second beam splitter 62 Beam LB injects third beam splitter 63.The description light beam LB of third beam splitter 63 is injected, part of it is reflected to -Z direction, leads To 1 delineation unit UW3 of odd-numbered (referring to Fig. 5).Moreover, the one of the description light beam LB transmitted from third beam splitter 63 Part reflexes to -Z direction by the 6th reflecting mirror 64, is oriented to 1 delineation unit UW1 of the 22 of odd-numbered (referring to Fig. 5).This Outside, in the second optical system 42, irradiate description light beam LB to delineation unit UW1, UW3, UW5 of odd-numbered relative to- Z-direction is slightly tilted.
In addition, the reflectivity and transmissivity of the second beam splitter 62 can be made in order to efficiently use the power for describing light beam LB Ratio close to 1:2, make the ratio of the reflectivity and transmissivity of third beam splitter 63 close to 1:1.
On the other hand, another party that third optical system 43 will be branched out in the first beam splitter 60 of the first optical system 41 Describe light beam LB branch and is oriented to delineation unit UW2, UW4 of aftermentioned even-numbered.Third optical system 43 is anti-with the 7th Penetrate mirror 71, pattern displacement mechanism 45, the 8th reflecting mirror 72, the 4th beam splitter 73, the 9th reflecting mirror 74.
The description light beam LB transmitted from the first beam splitter 60 of the first optical system 41 to +Y direction is by the 7th reflecting mirror 71 +X direction is reflexed to, transmitted from pattern displacement mechanism 45 and injects the 8th reflecting mirror 72.Pattern displacement mechanism 45 by with light beam position Identical tiltable 2 planopaallel plates (quartz) of telephone-moving structure 44 are constituted, and make to advance towards the 8th reflecting mirror 72 to +X direction Description light beam LB it is traversing in the face ZY.
4th beam splitter 73 is injected by the description light beam LB that the 8th reflecting mirror 72 reflexes to -Y direction.It is irradiated to the 4th point The description light beam LB of beam device 73, part of it are reflected onto -Z direction, and are oriented to 1 delineation unit UW4 of even-numbered (referring to Fig. 5).The description light beam LB transmitted from the 4th beam splitter 73 reflexes to -Z direction by the 9th reflecting mirror 74, and is oriented to idol 1 delineation unit UW2 of number number.In addition, in third optical system 43, irradiate the delineation unit UW2 to even-numbered, The description light beam LB of UW4 is slightly tilted also relative to -Z direction.
In this way, in branch optical system SL, it, will be from light supply apparatus CNT's towards multiple delineation unit UW1~UW5 Description light beam LB branches into a plurality of.At this point, the first beam splitter 60, the second beam splitter 62, third beam splitter 63 and the 4th beam splitter 73, its reflectivity (transmissivity) is set as reflectivity appropriate according to the branch's number for describing light beam LB, is retouched so as to irradiate to multiple The beam intensity for drawing the description light beam LB of unit UW1~UW5 is same intensity.
But the configuration of pattern displacement mechanism 44 is between the second relay lens 56 and the second reflecting mirror 57.Pattern displacement machine Structure 44 can be carried out all positions of the description line LL1~LL5 formed in substrate P in the description face of substrate P with μm grade Fine tuning.
In addition, pattern displacement mechanism 45 can will be formed in substrate P describe in line LL1~LL5, even-numbered Second description line LL2 and the 4th description line LL4 are finely adjusted in the description face of substrate P with a μm grade.
In turn, illustrate multiple delineation unit UW1~UW5 referring to Fig. 4, Fig. 5 and Fig. 7.It is multiple to retouch as shown in Fig. 4 (and Fig. 1) It draws unit UW1~UW5 and configures 2 column in the circumferential direction of rotating cylinder DR across median plane p3.Multiple delineation unit UW1~UW5 every Median plane p3 configuration first, side (the -X direction side of Fig. 5) configuration of third, the 5th description line LL1, LL3, LL5 first retouch Draw unit UW1, third delineation unit UW3 and the 5th delineation unit UW5.First delineation unit UW1, third delineation unit UW3 and 5th delineation unit UW5 separates specified interval configuration in the Y direction.In addition, multiple delineation unit UW1~UW5 are across center Face p3 configures the side (the +X direction side of Fig. 5) that the second, the 4th describes line LL2, LL4 and configures the second delineation unit UW2 and the 4th Delineation unit UW4.Second delineation unit UW2 and the 4th delineation unit UW4 separates specified interval configuration in the Y direction.At this point, such as Shown in Fig. 2 or Fig. 5 before, the second delineation unit UW2 is configured at the first delineation unit UW1 in the Y direction and third describes list Between first UW3.Equally, third delineation unit UW3 is configured at the second delineation unit UW2 and the 4th delineation unit UW4 in the Y direction Between.4th delineation unit UW4 is configured between third delineation unit UW3 and the 5th delineation unit UW5 on 24 in the Y direction.Separately Outside, as shown in figure 4, the first delineation unit UW1, third delineation unit UW3 and the 5th delineation unit UW5 and the second delineation unit UW2 and the 4th delineation unit UW4 is from Y-direction using median plane p3 as center balanced configuration.
Secondly, illustrating the structure of the optical system in each delineation unit UW1~UW5 referring to Fig. 4.Further, since each describe Unit UW1~UW5 is identical structure, so carrying out by taking the first delineation unit UW1 (hereinafter simply referred to as delineation unit UW1) as an example Explanation.
Delineation unit UW1 shown in Fig. 4 is included for along describing line LL1 (first describe line LL1) to scan description light The point optical scanning of beam LB, light deflector 81, polarising beam splitter PBS, quarter wave plate 82, scanner 83, bending mirror 84, f- θ Lens system 85 and Y multiplying power amendment optical component (lens group) 86B comprising cylindrical lens 86.In addition, and polarized light beam splitting Device PBS, which is adjacent to, is equipped with calibration detection system 31.
Light deflector 81 is for example using acousto-optic element (AOM:Acousto Optic Modulator；Acousto-optic modulator). AOM is by whether diffraction grating is generated by ultrasonic wave (high-frequency signal) in inside, along the generation of defined refraction angular direction The on-state (ON state) of 1 refraction light of incident description light beam and off-state (the OFF shape for not generating unirefringence light State) between the light switching element that switches over.
Control unit 16 shown in FIG. 1 switches at high speed description light beam by switching over light deflector 81 to turn on/off Projection/non-projection of the LB to substrate P.Specifically, with 1 of the description light beam LB of branch optical system SL distribution via relaying Lens 91 are slightly askew irradiated relative to -Z direction to light deflector 81.When light deflector 81 is switched to disconnection, describe Light beam LB is straight in a slanted state, by 92 shading of barn door by being arranged after light deflector 81 in front.On the other hand, When light deflector 81 is switched to connection, describes light beam LB (1 refraction light) 25 and deflected to -Z direction, pass through light deflector The 81 and polarising beam splitter PBS in the Z-direction for being set to light deflector 81 irradiates.Therefore, it is switched to by light deflector 81 When connection, describes the point light projection of light beam LB to substrate P, when light deflector 81 is switched to disconnection, describe the point of light beam LB Light will not be projected to substrate P.
Further, since AOM configuration is receiving thin position by the convergent light beam for describing light beam LB of relay lens 91, so The description light beam LB (1 refraction light) projected from light deflector 81 is diverging.Therefore, being equipped with after light deflector 81 makes to send out Scattered description light beam LB reverts to the relay lens 93 of collimated light beam.
The description light beam LB that polarising beam splitter PBS reflection is irradiated from light deflector 81 via relay lens 93.From polarization The description light beam LB that beam splitter PBS is projected is saturating by quarter wave plate 82, scanner 83 (rotary polygon mirror), bending mirror 84, f- θ Mirror system 85, the Y multiplying power amendment sequential advancement of optical component 86B and cylindrical lens 86, optically focused is at scanning element in substrate P Light.
On the other hand, polarising beam splitter PBS and the quarter wave plate between polarising beam splitter PBS and scanner 83 82 collaborate, and use up the reflected light for the description light beam LB for projecting substrate P or the rotating cylinder DR outer peripheral surface under it by the amendment of Y multiplying power Learn component 86B, cylindrical lens 86, f- θ lens system 85, bending mirror 84, scanner 83 sequence reversely advance, therefore, can be with Make the reflection light transmission.That is, irradiating from light deflector 81 to the description light beam LB of polarising beam splitter PBS is to become S polarized light Rectilinearly polarized light laser, by polarising beam splitter PBS reflection.In addition, by the description light beam of polarising beam splitter PBS reflection LB passes through quarter wave plate 82, scanner 83, bending mirror 84, f- θ lens system 85, the amendment of Y multiplying power optical component 86B, cylinder Lens 86 are irradiated to substrate P, and the point light for the description light beam LB being concentrated in substrate P becomes circularly polarized light.From substrate P (or rotation Rotating cylinder DR outer peripheral surface) reflected light by describe light beam LB send optical path drive in the wrong direction and again by quarter wave plate 82, and become P The laser of the rectilinearly polarized light of polarised light.Therefore, from substrate P (or rotating cylinder DR) to the reflection for reaching polarising beam splitter PBS Light penetrates polarising beam splitter PBS, and the photoelectric sensor 31Cs of calibration detection system 31 is irradiated to via relay lens 94.
In this way, polarising beam splitter PBS is arranged in comprising the scanning optics and calibration including scanner 83 Light divider between (calibrati connection) detection system 31.Description light beam LB is sent since calibration detection system 31 shares To the major part for sending light optical system of substrate P, so becoming simple and exquisite optical system.
As shown in Fig. 4 and Fig. 7, scanner 83 has reflecting mirror 96, rotary polygon mirror (rotary polygon mirror) 97, origin Detector 98.Passed through the description light beam LB (collimated light beam) of quarter wave plate 82 via cylindrical lens 95 by reflecting mirror 96 in the face XY Internal reflection is irradiated to rotary polygon mirror 97.Rotary polygon mirror 97 includes the rotary shaft 97a extended along Z-direction, is formed in rotation Multiple reflecting surface 97b around shaft 97a and constitute.Rotary polygon mirror 97 centered on rotary shaft 97a to regulation by being revolved Turn direction to rotate, makes to irradiate the angle of reflection to the description light beam LB (by the light beam of 81 intensity modulated of light deflector) of reflecting surface 97b The consecutive variations in the face XY, the description light beam LB reflected as a result, are bent mirror 84, f- θ lens system 85, the second cylindrical lens 86 (and Y multiplying power amendment use optical component 86B) optically focused at light, and along in substrate P description line LL1 (similarly, along LL2~LL5) scanning.The detection of origin detector 98 is scanned along the description line LL1 (similarly, along LL2~LL5) of substrate P Describe the origin of light beam LB.Origin detector 98 is configured at reflecting mirror 96 across the description light beam LB reflected by each reflecting surface 97b Opposite side.
In Fig. 7, to simplify the explanation, origin detector 98 only illustrates photoelectric detector, but in fact, is equipped with towards projection Describe the detections such as LED or the semiconductor laser of the reflecting surface 97b projection detecting light beam of the rotary polygon mirror 97 of light beam LB to use Light source, origin detector 98 carry out light via the reflected light that by reflecting surface 97b is reflected of the thin slit to the light beam of detection 27 Electro-detection.
Origin detector 98 is set to the description line LL1 (LL2~LL5) being irradiated in substrate P relative to light as a result, Description starting position at the time of always only shift to an earlier date the stipulated time, output indicate origin pulse signal.
The description light beam LB for being irradiated to bending mirror 84 from scanner 83 is bent mirror 84 and is reflected towards -Z direction, injects f- θ Lens system 85, cylindrical lens 86 (and Y multiplying power amendment optical component 86B).
But it is non-critical parallel with the center line of rotary shaft 97a in each reflecting surface 97b of rotary polygon mirror 97 but slightly When low dip (face inclination), the description line (LL1~LL5) that the point light being incident upon in substrate P is formed exists in each reflecting surface 97b It is shaken in substrate P to X-direction.Therefore, using Fig. 8, illustrate by 2 cylindrical lenses 95,86 of setting, relative to rotating polygon The face inclination of each reflecting surface 97b of mirror 97 describes line LL1~LL5 to X-direction jitter conditions to reduce or eliminate.
Shown on the left of Fig. 8 by cylindrical lens 95, scanner 83, f- θ lens system 85, cylindrical lens 86 optical path edge The state of X/Y plane expansion, shows the state that the optical path is unfolded in XZ plane on the right side of Fig. 8.Match as basic optics It sets, the reflecting surface 97b of the illuminated description light beam LB of rotary polygon mirror 97 is configured to the incidence positioned at f- θ lens system 85 Pupil location (front side focal position).As a result, relative to the rotation angle θ p/2 of rotary polygon mirror 97, f- θ lens system is injected The incidence angle of 85 description light beam LB becomes θ p, proportionally determines to be incident upon on substrate P (plane of illumination) with incidence angle θ p Point light image height position.In addition, by the way that reflecting surface 97b configuration in the front side focal position of f- θ lens system 85, is projected Description light beam LB in substrate P describe any position on line become telecentricity state (description light beam as light Chief ray state always parallel with the optical axis AXf of f- θ lens system 85).
As shown in figure 8,2 cylindrical lenses 95,86 are in the face (XY face) vertical with the rotary shaft 97a of rotary polygon mirror 97 Interior, the parallel plate glass for being zero as refracting power (power) functions, in the Z-direction (face XZ that rotary shaft 97a extends It is interior) on functioned as with the convex lens of certain positive refracting power.The description light beam LB for injecting the first cylindrical lens 95 is (big Cause collimated light beam) cross sectional shape be several mm or so circle, but by focal position of the cylindrical lens 95 in the face XZ via When reflecting mirror 96 is set on the reflecting surface 97b of rotary polygon mirror 97, there is the width of light beam of number mm in the face XY, in the side Z Upwards, convergent slit-shaped point light extends optically focused along direction of rotation on reflecting surface 97b.
The description light beam LB reflected by the reflecting surface 97b of rotary polygon mirror 97 is collimated light beam in the face XY, but in XZ (direction that rotary shaft 97a extends) becomes divergent beams and injects f- θ lens system 85 in face.Therefore, from f- θ lens system 85 project after description light beam LB in the face XZ (rotary shaft 97a extend direction) generally parallel light beam, but because of the second column The effect of face lens 86, in the face XZ, i.e. in substrate P, in the substrate P orthogonal with the direction for describing line LL1~LL5 extension In carry direction also by optically focused be point light.As a result, projecting circular dot light on each description line in substrate P.
It, can be in the face XZ, by the anti-of rotary polygon mirror 97 by the way that cylindrical lens 86 is arranged as shown in the right side of Fig. 8 It penetrates face 97b and substrate P (plane of illumination) is set to image conjugate relationship optically.Therefore, though rotary polygon mirror 97 it is each Reflecting surface 97b is relative to non-scan direction (direction that rotary shaft 97a extend) tool orthogonal with the scanning direction of light beam LB is described Have and topple over error, the position of the description line (LL1~LL5) in substrate P will not (substrate P be removed to the non-scan direction of light Transport direction) shake.In this way, by that, with rear setting saturating 29 mirror 95,86 of cylinder, can be constituted opposite before rotary polygon mirror 97 In the face tilt correction optical system of the multi-panel reflecting surface of non-scan direction.
Here, as shown in fig. 7, each scanner 83 of multiple delineation unit UW1~UW5 is relative to median plane p3 in symmetrical Structure.3 scanners 83 corresponding with delineation unit UW1, UW3, UW5 in multiple scanners 83 are configured rotating cylinder DR's Direction of rotation upstream side (the -X direction side of Fig. 7), 2 scanners 83 configuration corresponding with delineation unit UW2, UW4 is in rotating cylinder The direction of rotation downstream side (the +X direction side of Fig. 7) of DR.Moreover, 2 scanners of 3 scanners 83 of upstream side and downstream side 83 are oppositely disposed across median plane p3.In this way, 3 scanners 83 of upstream side and 2 scanners 83 in downstream side are with rotation 180 ° of configuration relation is rotated centered on axis I (Z axis).Therefore, upstream side 3 rotary polygon mirrors 97 for example on one side to the left Rotation is irradiated on one side to rotary polygon mirror 97 when describing light beam LB, the description light beam LB that is reflected by rotary polygon mirror 97 from Describe starting position and provides scanning direction (such as +Y direction of Fig. 7) scanning towards end position edge is described.On the other hand, instantly Swim side 2 rotary polygon mirrors 97 on one side toward anticlockwise, while to rotary polygon mirror 97 irradiate describe light beam LB when, revolved The description light beam LB for turning the reflection of mirror polygon 97 is rotated from description starting position towards description end position along with 3 of upstream side The opposite scanning direction of mirror polygon 97 ' (such as -Y direction of Fig. 7) scanning.
Here, reaching retouching for substrate P from delineation unit UW1, UW3, UW5 of odd-numbered when observing in the face XZ of Fig. 4 The axis for drawing light beam LB becomes and the setting consistent direction rhumb line Le1.That is, setting rhumb line Le1 becomes connection in the face XZ The line of description line LL1, LL3, LL5 and rotation centerline AX2 of odd-numbered.Similarly, when being observed in the face XZ of Fig. 4, from The axis that delineation unit UW2, UW4 of even-numbered reach the description light beam LB of substrate P becomes consistent with setting rhumb line Le2 Direction.That is, setting rhumb line Le2 becomes description line LL2, LL4's and rotation centerline AX2 of connection even-numbered in the face XZ Line.Therefore, it is configured at each direction of travel (chief ray) of light and the description light beam LB of projection towards rotation in substrate P The rotation centerline AX2 of rotating cylinder DR.
The amendment of Y multiplying power is configured between f- θ lens system 85 and substrate P with optical component 86B.Optics is used in the amendment of Y multiplying power Component 86B can be such that the description line LL1~LL5 formed by each delineation unit UW1~UW5 isotropically only puts in the Y direction Big or diminution small quantity.
Specifically, being able to use following mechanism, that is, make to be covered each by describe line LL1~LL5 there is certain thickness Radioparent planopaallel plate (quartz) mechanically be bent (bending) about the extending direction for describing line and makes description line The variable mechanism of the multiplying power (scanning length) of Y-direction or a part for making this 3 groups of lens systems of convex lens, concavees lens, convex lens The mechanism etc. for being moved along optical axis direction and keeping the multiplying power (scanning length) for describing the Y-direction of line variable.
Each section of the drawing apparatus 11 constituted in this way is controlled by control unit 16, thus describes defined figure in substrate P Case.That is, control unit 16 is during being projeced into the description light beam LB of substrate P and scanning to scanning direction, according to substrate P to be depicted in The CAD information of pattern on/off modulation is carried out to light deflector 81, thus make to describe light beam LB deflection, in the sense of substrate P Depicting pattern on photosphere.In addition, control unit 16 pass through make along describe line LL1 scanning description light beam LB scanning direction and Rotation based on rotating cylinder DR and make mobile synchronization of the substrate P to carry direction, in the A7 of exposure area correspond to describe line Describe predetermined pattern in the part of LL1.
Then, illustrate aligming microscope AM1, AM2 referring to Fig. 3 and Fig. 9 together.Aligming microscope AM1, AM2 detection are preparatory The alignment mark or the reference mark being formed on rotating cylinder DR and reference pattern etc. being formed in substrate P.Hereinafter, by substrate P Alignment mark and rotating cylinder DR reference mark and reference pattern referred to as mark.Aligming microscope AM1, AM2 are for making base Rotating cylinder 31DR and drawing apparatus 11 are calibrated in plate P and the predetermined pattern being depicted in substrate P contraposition (alignment).
Aligming microscope AM1, AM2 are arranged compared to the description line LL1~LL5 formed by drawing apparatus 11 in rotating cylinder Direction of rotation (carry direction of substrate P) upstream side of DR.In addition, aligming microscope AM1 is configured compared to aligming microscope AM2 In the upstream side of the direction of rotation of rotating cylinder DR.
Aligming microscope AM1, AM2 are injected to have and be generated by label by illumination light is projeced into substrate P or rotating cylinder DR The objective system GA as detection probe of light (objective system of aligming microscope AM2 is only typically shown in Fig. 9 GA4), the picture that the label via objective system GA light is shot using two-dimensional CCD, CMOS etc. is (bright visual field picture, dark field picture, glimmering Light image etc.) camera system GD (the shooting GD4 of aligming microscope AM2 is only typically shown in Fig. 9) etc. constitute.In addition, right Mutatis mutandis illumination light be the wavelength domain that hardly there is sensitivity relative to the photosensitive layer in substrate P light, for example wavelength 500~ The light of 800nm or so.
Aligming microscope AM1 is formed a line in the Y direction and multiple (such as 3) is arranged in (width direction of substrate P).Together Sample, aligming microscope AM2 are formed a line in the Y direction and multiple (such as 3) are arranged in (width direction of substrate P).That is, right Quasi- microscope AM1, AM2 are total to be equipped with 6.
In Fig. 3, in order to make it easy to understand, show it is in each objective system GA of 6 aligming microscopes AM1, AM2,3 it is right The configuration of each objective system GA1~GA3 of quasi- microscope AM1.Each objective system GA1 based on 3 aligming microscope AM1~ Viewing area (detection position) Vw1~Vw3 in the substrate P (or outer peripheral surface of rotating cylinder DR) of GA3 as shown in figure 3, with rotation Turn to configure at predetermined intervals in the parallel Y-direction of center line AX2.As shown in figure 9, passing through the center of each viewing area Vw1~Vw3 Each objective system GA1~GA3 optical axis L a1~32La3 it is parallel with the face XZ.Equally, based on 3 aligming microscope AM2 Viewing area Vw4~Vw6 in the substrate P (or outer peripheral surface of rotating cylinder DR) of each objective system GA as shown in figure 3, with rotation It is configured at predetermined intervals in center line AX2 parallel Y-direction.As shown in figure 9, passing through each of the center each viewing area Vw4~Vw6 Optical axis L a4~La6 of objective system GA is also parallel with the face XZ.Moreover, viewing area Vw1~Vw3 and viewing area Vw4~ Vw6 is configured at predetermined intervals on the direction of rotation of rotating cylinder DR.
Viewing area Vw1~Vw6 of label based on the aligming microscope AM1, AM2 is in substrate P or rotating cylinder DR, example It is such as set in the range of 500~200 μm of rectangular left and right.Here, optical axis L a1~La3 of aligming microscope AM1, i.e. object lens system Optical axis L a1~the La3 of the GA and extended rhumb line Le3 of the radial direction from rotation centerline AX2 to rotating cylinder DR that unites is set as Identical direction.In this way, becoming the observation of connection aligming microscope AM1 when setting rhumb line Le3 is observed in the face XZ of Fig. 9 The line of region Vw1~Vw3 and rotation centerline AX2.Equally, optical axis L a4~La6 of aligming microscope AM2, i.e. objective system GA Optical axis L a4~La6 from rotation centerline AX2 towards identical as the setting rhumb line Le4 radially extended along rotating cylinder DR Side set up.In this way, becoming the sight of connection aligming microscope AM2 when setting rhumb line Le4 is observed in the face XZ of Fig. 9 Examine the line of region Vw4~Vw6 and rotation centerline AX2.At this point, aligming microscope AM1 compared to aligming microscope AM2 due to matching The upstream side in the direction of rotation of rotating cylinder DR is set, so the angle that median plane p3 and setting rhumb line Le3 are formed is compared in The angle that heart face p3 and setting rhumb line Le4 are formed is big.
Describe line LL1~LL5's by 5 as shown in figure 3, being configured at intervals in X direction in substrate P The exposure area A7 that each is depicted.It for example in crosswise is formed around exposure area A7 in substrate P useful In multiple alignment mark Ks1~Ks3 (hreinafter referred to as marking) of contraposition.
In Fig. 3, label Ks1 is arranged at predetermined intervals in X direction in the neighboring area of the side-Y of exposure area A7, marks Remember that+Y side peripheral areas of the Ks3 in exposure area A7 is arranged at predetermined intervals in X direction.In turn, label Ks2 is adjacent in X-direction 2 exposure area A7 between white space, set on the center of Y-direction.
Moreover, label Ks1 is formed as in a period of conveying substrate P, in the objective system GA1 of aligming microscope AM1 It is successively captured in viewing area Vw1 and in the viewing area Vw4 of the objective system GA of aligming microscope AM2.In addition, label Ks3 is formed as in a period of conveying substrate P, in the viewing area Vw3 of the objective system GA3 of aligming microscope AM1 and right It is successively captured in the viewing area Vw6 of the objective system GA of quasi- microscope AM2.In turn, label Ks2 is formed as in conveying substrate In a period of P, respectively in the viewing area Vw2 of the objective system GA2 of aligming microscope AM1 and the object of aligming microscope AM2 It is successively captured in the viewing area Vw5 of mirror system GA.
Therefore, in 3 aligming microscopes AM1, AM2, the aligming microscope AM1 of two sides in the Y-direction of rotating cylinder DR, AM2 can observe or detect always label Ks1, the Ks3 for being formed in the width direction two sides of substrate P.In addition, 3 alignments are micro- Aligming microscope AM1, the AM2 in the center in mirror AM1, AM2, rotating cylinder DR Y-direction can be observed or be detected at any time It is depicted in the label Ks2 of the formation such as the gutter between the exposure area A7 in substrate P.
Here, exposure device EX is so-called Multibeam drawing apparatus, therefore, in order to will be by multiple delineation unit UW1 Multiple patterns that each description line LL1~LL5 of~UW5 describes in substrate P properly engage in the Y direction each other, need to use In the calibration by the joining accuracy inhibition of multiple delineation unit UW1~UW5 in permissible range.In addition, aligming microscope 34AM1, AM2 relative to each description line LL1~LL5 of multiple delineation unit UW1~UW5 viewing area Vw1~Vw6 it is opposite Positional relationship need critically to find out by benchmark wire management.In order to carry out the benchmark wire management, it is also desirable to be calibrated.
For confirming the joining accuracy of multiple delineation unit UW1~UW5 calibration, for carry out aligming microscope AM1, In the calibration of the benchmark wire management of AM2, need that fiducial mark is arranged at least part of the rotating cylinder DR outer peripheral surface of supporting substrates P Note or reference pattern.Therefore, as shown in Figure 10, in exposure device EX, reference mark or reference pattern are equipped with using in outer peripheral surface Rotating cylinder DR.
Rotating cylinder DR is identically formed with Fig. 3, Fig. 9 in two end sides of its outer peripheral surface and constitutes aftermentioned rotation position inspection Survey scale portion GPa, GPb of a part of mechanism 14.In addition, rotating cylinder DR is in the inside of scale portion GPa, GPb, substantially Carve narrow restriction band CLa, CLb of the width for being equipped with and being made of the edge of concave slot or convex.The width quilt of the Y-direction of substrate P It is set as smaller than the interval of the Y-direction of 2 restriction bands CLa, CLb, substrate P is closely supported in the outer peripheral surface of rotating cylinder DR , by restriction band CLa, CLb clamp inside region.
Rotating cylinder DR is equipped with latticed reference pattern on the outer peripheral surface as clamped by restriction band CLa, CLb and (also can As reference mark) RMP, in reference pattern RMP, is carved repeatedly with certain spacing (period) Pf1, Pf2 and is equipped with relative to rotation Turn center line AX2 with+45 inclined multiple line pattern RL1 (line pattern) of degree and relative to rotation centerline AX2 with- 45 degree of inclined multiple line pattern RL2 (line pattern).In addition, the width of line pattern RL1 and line pattern RL2 are LW.
Reference pattern RMP is set as the uniform slant pattern of entire surface (oblique lattice-shaped pattern), so that in substrate P and rotating cylinder The part of the periphery DR face contact does not generate the variation such as tension of frictional force or substrate P.In addition, line pattern RL1, RL2 might not It must be 45 degree of inclination, be also possible to for line pattern RL1 to be set as parallel with Y-axis, line pattern RL2 is set as parallel with X-axis indulges Horizontal waffle-like pattern.Furthermore, it is not necessary that make line pattern RL1, RL2 with 90 degree intersect, 2 adjacent bar chart case RL1 with it is adjacent The rectangular area that surrounds 2 bar chart case RL2 line can also be made with the angle for becoming the diamond shape other than square (or rectangle) Pattern RL1, RL2 intersect.
Then, illustrate rotation position testing agency 14 referring to Fig. 3, Fig. 4 and Fig. 9.As shown in figure 9, rotation position detection machine Structure 14 detects the rotation position of rotating cylinder DR optically, using for example using the encoder system of rotary encoder etc..Rotation Turning position detecting mechanism 14 is divided with scale portion GPa, GPb set on the both ends of rotating cylinder DR and with scale portion GPa, GPb The traverse measuring device of not opposite multiple encoder head EN1, EN2, EN3, EN4.In Fig. 4 and Fig. 9, only show and scale 4 portion GPa opposite encoder heads EN1, EN2, EN3, EN4, but be also oppositely disposed same encoder in scale portion GPb and read Head EN1, EN2, EN3, EN4.Rotation position testing agency 14 has the shake (rotation centerline at the detectable both ends rotating cylinder DR AX2 extend Y-direction displacement a little) displacement meter YN1, YN2, YN3, YN4.
The scale of scale portion GPa, GPb spread the outer peripheral surface circumferential direction entirety of rotating cylinder DR and are respectively formed as ring-type.Scale Portion GPa, GPb are the circumferential directions in the outer peripheral surface of rotating cylinder DR to be equipped with grid concavely or convexly regulation spacing (such as 20 μm) quarter The diffraction grating of line is configured to increment type scale.Therefore, scale portion GPa, GPb is around rotation centerline AX2 and rotating cylinder DR one Rotation.
Substrate P is configured to the inside of scale portion GPa, GPb for avoiding both ends wound on rotating cylinder DR, namely limits Inside with CLa, CLb.In the case where needing strict configuration relation, be set as making the outer peripheral surface of scale portion GPa, GPb with The outer peripheral surface of the part of substrate P on rotating cylinder DR becomes the same face (having same radius from center line AX2).For This, makes the outer peripheral surface of scale portion GPa, GPb radially only be higher by base relative to the outer peripheral surface for winding substrate of rotating cylinder DR The amount of thickness of plate P.Therefore, the outer peripheral surface of scale portion GPa, GPb for being formed on rotating cylinder DR can be set as and base The roughly the same radius of the outer peripheral surface of plate P.To, encoder head EN1, EN2, EN3, EN4 can with wound on rotating cylinder Scale portion GPa, GPb are detected at the identical radial position in description face in the substrate P of DR, can be reduced because of measurement position and processing Radially different generated Abbe error of the position in rotary system.
Encoder head EN1, EN2, EN3, EN4 are arranged respectively at scale portion GPa, GPb from rotation centerline AX2 Around, become position different in the circumferential direction of rotating cylinder DR.The encoder head EN1, EN2, EN3, EN4 are connected to control Portion 16.Encoder head EN1, EN2, EN3, EN4 project measurement light beam towards scale portion GPa, GPb, by its reflected light Beam (refraction light) carries out Photoelectric Detection, by the detection signal changed corresponding to the circumferential position of scale portion GPa, GPb (for example, tool Have 2 phase signals of 90 degree of phase differences) it exports to control unit 16.Control unit 16 passes through electric with counting (not shown) to the detection signal Road carries out interpolation and goes forward side by side line number word processing, can be with angle change i.e. its outer peripheral surface of the resolution measurement rotating cylinder DR of sub-micron Circumferential direction on change in location.Control unit 16 can also measure the transporting velocity of substrate P according to the angle change of rotating cylinder DR.
In addition, encoder head EN1 configuration is on setting rhumb line Le1 as shown in Fig. 4 and Fig. 9.Rhumb line Le1 is set For the link encoder read head EN1 in the face XZ measurement light beam to the projected area (reading position) on scale portion GPa (GPb) With the line of rotation centerline AX2.In addition, setting rhumb line Le1 is that line LL1, LL3, LL5 are described in connection in the face XZ as above-mentioned With the line of rotation centerline AX2.As above, the line of the reading position of link encoder read head EN1 and rotation centerline AX2 and company It is same orientation line that knot, which describes line LL1, LL3, LL5 and the line of rotation centerline AX2,.
Equally, as shown in Fig. 4 and Fig. 9, encoder head EN2 configuration is on setting rhumb line Le2.Rhumb line Le2 is set For the link encoder read head EN2 in the face XZ measurement light beam to the projected area (reading position) on scale portion GPa (GPb) With the line of rotation centerline AX2.In addition, as above, setting rhumb line Le2 is that line LL2, LL4 and rotation are described in connection in the face XZ The line of center line AX2.As above, the line of the reading position of link encoder read head EN2 and rotation centerline AX2 and connection are described The line of line LL2, LL46 and rotation centerline AX2 are same orientation line.
In addition, encoder head EN3 configuration is on setting rhumb line Le3 as shown in Fig. 4 and Fig. 9.Rhumb line Le3 is set For the link encoder read head EN3 in the face XZ measurement light beam to the projected area (reading position) on scale portion GPa (GPb) With the line of rotation centerline AX2.In addition, as described above, setting rhumb line Le3 is to link AM1 pairs of aligming microscope in the face XZ The line of the viewing area Vw1~Vw3 and rotation centerline AX2 of substrate P.As above, the reading position of link encoder read head EN3 and The line of the viewing area Vw1~Vw3 and rotation centerline AX2 of the line of rotation centerline AX2 and connection aligming microscope AM1 exist Become same orientation line when observing in the face XZ.
Equally, as shown in Fig. 4 and Fig. 9, encoder head EN4 configuration is on setting rhumb line Le4.Rhumb line Le4 is set For the link encoder read head EN4 in the face XZ measurement light beam to the projected area (reading position) on scale portion GPa (GPb) With the line of rotation centerline AX2.In addition, as described above, setting rhumb line Le4 is to link AM2 pairs of aligming microscope in the face XZ The line of the viewing area Vw4~Vw6 and rotation centerline AX2 of substrate P.As above, the reading position of link encoder read head EN4 and The line of the viewing area Vw4~Vw6 and rotation centerline AX2 of the line of rotation centerline AX2 and connection aligming microscope AM2 exist Become same orientation line when observing in the face XZ.
By the setting orientation of encoder head EN1, EN2, EN3, EN4 (centered on rotation centerline AX2 in the face XZ Interior angle direction) with setting rhumb line Le1, Le2, Le3, Le4 indicate in the case where, as shown in figure 4, by multiple delineation units It is ± θ ° angled relative to median plane p3 that UW1~UW5 and encoder head EN1, EN2 are configured to setting rhumb line Le1, Le2.If Set rhumb line Le1 and be arranged rhumb line Le2 encoder head EN1 and encoder head EN2 scale portion GPa (GPb) quarter With spatially non-interfering state setting around degree.
From rotation centerline AX2, displacement meter YN1, YN2, YN3, YN4 are arranged respectively at the week of scale portion GPa or GPb It encloses, becomes position different in rotating cylinder DR circumferential direction.The displacement meter YN1, YN2, YN3, YN4 are connected to control unit 16.
Displacement meter YN1, YN2, YN3, YN4 by radially as close possible to be wound in the substrate P of rotating cylinder DR Description face position detection displacement, Abbe error can be reduced.Displacement meter YN1, YN2, YN3, YN4 are by rotating cylinder DR two One side of end projects measurement light beam, and carries out Photoelectric Detection to its reflected beams (or refraction light), thus will correspond to rotation The detection signal of the change in location of the Y-direction (width direction of substrate P) at the both ends rotating cylinder DR is exported to control unit 16.Control unit 16 by with measuring circuit (not shown) (counting circuit or interpolating circuit etc.) carrying out digital processing to the detection signal, can be with The change in displacement of the Y-direction of the resolution measurement rotating cylinder DR (and substrate P) of sub-micron.Control unit 16 can also be according to rotating cylinder One side's at the both ends DR changes to measure the offset rotation of rotating cylinder DR.
As long as displacement meter YN1, YN2, YN3, YN4 have 1 in 4, but in order to measure the offset of rotating cylinder DR rotation Turn etc., if there is 3 or more in 4, it will appreciate that movement (the dynamic inclination change in the face of a side at the both ends rotating cylinder DR Change etc.).In addition, the label or pattern in substrate P can be consistently measured by aligming microscope AM1, AM2 in control unit 16 In the case where (or label on rotating cylinder DR etc.), displacement meter YN1, YN2, YN3, YN4 also can be omitted.
Here, control unit 16 detects the rotation angle of scale portion (rotating cylinder DR) GPa, GPb by encoder head EN1, EN2 Spend position, and based on the rotary angle position detected, carry out using odd-numbered and even-numbered delineation unit UW1~ The description of UW5.That is, control unit 16 during being scanned to the description light beam LB that substrate P projects to scanning direction in, based on should be The CAD information for the pattern that substrate P is described carries out on/off modulation to light deflector 81, but based on the rotation angle detected The timing that position carries out the on/off modulation of light deflector 81 is spent, can precisely be retouched on the photoinduction layer of substrate P Draw pattern.
In addition, when control unit 16 is by the alignment mark Ks1~Ks3 detected in substrate P by aligming microscope AM1, AM2 , the rotary angle position of scale portion GPa, the GPb (rotating cylinder DR) detected by encoder head EN3, EN4 stored, The corresponding relationship of the position of alignment mark Ks1~Ks3 in substrate P and the rotary angle position of rotating cylinder DR can be found out.Together Sample, it is when control unit 16 is by the reference pattern RMP detected on rotating cylinder DR by aligming microscope AM1, AM2, by encoding The rotary angle position of scale portion GPa, GPb (rotating cylinder DR) of device read head EN3, EN4 detection are stored, and rotation can be found out The corresponding relationship of the rotary angle position of the position and rotating cylinder DR of reference pattern RMP on cylinder DR.In this way, aligming microscope AM1, AM2 can critically measure the rotation of the rotating cylinder DR of the moment sampled to label in viewing area Vw1~Vw6 Angle position (or circumferential position).In exposure device EX, based on the rule that the measurement result makes substrate P and is depicted in substrate P Determine pattern contraposition (alignment) or calibrates rotating cylinder DR and drawing apparatus 11.
In addition, actual sampling is by the rotation angle position of the rotating cylinder DR measured by encoder head EN3, EN4 It is set to as angle corresponding with the position of reference pattern RMP on the label or rotating cylinder DR in the substrate P substantially distinguished in advance When position, image information high speed writein image memory exported from each camera system GD of aligming microscope AM1, AM2 etc. is come It carries out.That is, being triggering with the rotary angle position of the rotating cylinder DR measured by encoder head EN3, EN4, to from each shooting The image information of system GD output is sampled.Unlike this, also there is each pulse of the clock signal in response to assigned frequency, Rotary angle position (count measurement value) to the rotating cylinder DR measured by encoder head EN3, EN4 and from each camera system GD The method that the image information of output is sampled simultaneously.
In addition, the reference pattern RMP on label and rotating cylinder DR in substrate P is due to relative to viewing area Vw1~Vw6 It is moved along a direction, so when being sampled to the image information exported from each camera system GD, as taking the photograph for CCD or CMOS The shadow element element fast it is preferable to use shutter speed.Accompanying this, it is similarly desirable to increase the photograph of illumination observation region Vw1~Vw6 The luminance of Mingguang City, the lighting source as aligming microscope AM1, AM2, it is also considered that use flash lamp or high luminance LED etc..
Figure 11 is the explanatory diagram for describing the positional relationship between line and depicting pattern indicated on substrate.Delineation unit UW1 ~UW5 passes through along the point light for describing line LL1~LL5 scanning description light beam LB, depicting pattern PT1~PT5.Description line LL1~ LL5's describes the description beginning PTa that starting position OC1~OC5 is pattern P T1~PT5.The description for describing line LL1~LL5 terminates Position EC1~EC5 becomes the description terminal PTb of pattern P T1~PT5.
The description terminal PTb for describing beginning PTa, the description terminal PTb in description terminal PTb and pattern P T2 of pattern P T1 Engagement.Equally, the description beginning PTa of the description beginning PTa and pattern P T3 of pattern P T2 are engaged, the description terminal PTb of pattern P T3 It is engaged with the description terminal PTb of pattern P T4, the description beginning PTa of the description beginning PTa and pattern P T5 of pattern P T4 are engaged.This Sample is depicted in pattern P T1~PT5 in substrate P each other as substrate P is toward the movement of length direction and in the width side of substrate P Engagement upwards, depicts device pattern in big exposure area A7 on the whole.
Figure 12 is the point light for indicating to describe light beam and the explanatory diagram for describing the relationship between line.Delineation unit UW1~UW5 In, typically illustrate description the line LL1 and LL2 of delineation unit UW1 and UW2.Due to the description line of delineation unit UW3~UW5 LL3~LL5 is also identical, so the description thereof will be omitted.By the constant speed rotation of mirror polygon 97, describe the light beam spot light SP of light beam LB Along description line LL1 and LL2 scanning the retouching from description starting position OC1, OC2 to description end position EC1, EC2 in substrate P The length LBL amount of line drawing.
In general, directly describing in Exposure mode, even if describing the pattern for the minimum dimension that can be exposed as device In the case of, high-precision is also achieved by the multiple-exposure (multiple write-in) based on multiple light SP and stable pattern plotter. It as shown in figure 12, is pulse due to describing light beam LB when the actual effect diameter of light SP is set as Xs on describing line LL1 and LL2 Therefore light passes through the point light SP of point light SP and lower 1 pulse photogenerated that 1 pulsed light (fluorescent lifetime of picosecond) generates It is scanned in such a way that the about 1/2 distance CXs in diameter Xs is along Y-direction (main scanning direction) overlapping.
In addition, substrate P is with fixing speed along+X while along the main scanning of each point light SP for describing line LL1, LL2 Direction is carried, therefore, each to describe line LL1, LL2 in substrate P in X direction to provide that spacing is mobile (subscan).The spacing exists This is set to the about 1/2 distance CXs of the diameter Xs of a light SP, but not limited to this.As a result, in sub-scanning direction (X-direction) It is upper be also with the 1/2 of diameter Xs (or be also possible to overlap distance) in addition to this distance CXs by point light SP adjacent in X direction Overlap each other exposure.In turn, setting describes the description starting position OC1 of line LL1 and describes end position EC1 and describe line LL2 Description starting position OC2 and describe end position EC2 so that describe line LL1 describe end position EC1 excitation light beam Put light SP and the movement in the light beam spot light SP for describing end position EC2 excitation for describing line LL2 with substrate P to length direction (i.e. subscan) and in the width direction of substrate P (Y-direction) with overlap distance CXs engagement.
As an example, it when the actual effect diameter Xs of light beam spot light SP is set as 4 μm, can expose well by light SP's 2 rows × 2 arrange the area occupied (in total 4 point light of this two directions overlapping arrangement of main scanning and subscan) or with 3 row × 3 Column (adding up to 9 point light in two direction overlapping arrangements of main scanning and subscan) area for occupying be minimum dimension pattern, I.e. minimum dimension be 6 μm~8 μm or so line width pattern.In addition, being set as by the reflecting surface 97b of rotary polygon mirror 97 10 faces, when by being set as 10,000 rpm or more around the rotation speed of the rotary polygon mirror 97 of rotary shaft 97a, rotary polygon mirror 97 The scanning times (being set as scan frequency Fms) of point light SP (describe light beam LB) on the description line (LL1~LL5) of realization can be 1666.66 ... Hz or more.This means that 1666 or more can be described in carry direction (X-direction) in every 1 second in substrate P Describe the pattern of line amount.
In addition, the case where the transporting velocity for the substrate P that the rotation driving based on rotating cylinder DR is realized is 5mm/s or so Under, it can be by the spacing in the X-direction (carry direction of substrate P) for describing line LL1 (LL2~LL5 is also identical) shown in Figure 12 (distance CXs) is set as about 3 μm or so.
In this case, the resolution ratio R of the pattern plotter on main scanning direction (Y-direction) is according to a light SP Actual effect diameter Xs and scan frequency Fms and constitute light deflector 81 acousto-optic element (AOM) on/off minimum Switching time determines.It can make when using the element of highest response frequency Fss=50MHz as acousto-optic element (AOM) Each time of on-state and off-state is 20ns or so.In turn, since 1 reflecting surface 97b of rotary polygon mirror 97 is real The rotation that (the point optical scanning for describing the length LBL amount of line) is 1 reflecting surface 97b during the actual effect scanning of existing description light beam LB 1/3 or so of angular amount, so being determined when the length LBL for describing line is set as 30mm according to the switching time of light deflector 81 Fixed resolution ratio R becomes R=LBL/ (1/3)/(1/Fms) × 3 μm of (1/Fss) ≈.
According to the relational expression, in order to improve the resolution ratio R of pattern plotter, such as the acousto-optic element as light deflector 81 (AOM) using highest response frequency Fss is the element of 100MHz, and the switching time that will turn on/disconnect is set as 10nsec. Resolution ratio R becomes 1.5 μm of half as a result,.In this case, by the transporting velocity of the rotation of the rotating cylinder DR substrate P realized It is set as half.As proposing other methods of high resolution R, such as it can also be improved the rotation speed of rotary polygon mirror 97.
In general, resist used in photoetching is about 30mj/cm using Resist sensitivity Sr2The resist of left and right.? If the transmissivity Δ Ts of optical system is 0.5 (50%), sets the actual effect scanning in 1 reflecting surface 97b of rotary polygon mirror 97 Period is 1/3 or so, set describe the length LBL of line as 30mm, set the number Nuw of delineation unit UW1~UW5 as 5, set rotating cylinder DR When the transporting velocity Vp of the substrate P of progress is 5mm/s (300mm/min), under laser power Pw needed for light supply apparatus CNT passes through Formula is estimated.
Pw=30/60 × 3 × 30 × 5/0.5/ (1/3)=1350mW
Assuming that when delineation unit is 7, laser power Pw such as following formula needed for light supply apparatus CNT.
Pw=30/60 × 3 × 30 × 7/0.5/ (1/3)=1890mW
For example, if Resist sensitivity is 80mj/cm2Left and right, then it is defeated as light beam in order to be exposed with identical speed The light supply apparatus CNT of 3~5W or so is needed out.Instead of preparing this power light source, as long as the substrate P for realizing rotating cylinder DR The transporting velocity Vp of rotation be reduced to 30/80 relative to the 5mm/s of initial value, 1.4 can also be used as light beam output~ The light supply apparatus of 1.9W or so is exposed.
In addition, setting the length LBL for describing line as 30mm, and assume the spot diameter Xs of light beam spot light SP and by being based on (the minimum lattice of specified light-beam position, are equivalent to 1 to the resolution ratio that the light switching of the acousto-optic element (AOM) of light deflector 81 determines Pixel) Xg is equal, in the case where being 3 μm, when the rotation speed for the rotary polygon mirror 97 for setting 10 faces is 10,000 rpm The time of 1 rotation of rotary polygon mirror 97 is 3/500 second, if the actual effect of 1 reflecting surface 97b of rotary polygon mirror 97 is swept When being the 1/3 of the rotation angular amount of 1 reflecting surface 97b during retouching, the actual effect sweep time Ts (second) of 1 reflecting surface 97b passes through (3/500) × (1/10) × (1/3) is found out, about Ts=1/5000 (second).When light supply apparatus CNT is pulse laser as a result, Pulsed illumination frequency Fz is found out according to Fz=LBL/ (TsXs), and Fz=50MHz is low-limit frequency.Therefore, in embodiments, Need the light supply apparatus CNT of the pulse laser of output frequency 50MHz or more.Therefore, the pulsed illumination frequency Fz of light supply apparatus CNT Can for light deflector 81 acousto-optic element (AOM) highest response frequency Fss (such as 50MHz) 2 times or more (such as 100MHz)。
In turn, it can be controlled as following: the acousto-optic element (AOM) of light deflector 81 is switched to connection shape State/off-state driving signal is during acousto-optic element (AOM) is migrated from on-state to off-state or from disconnection The not luminous mode of pulsing during state is migrated to on-state, make light supply apparatus CNT with pulsed illumination frequency Fz The clock signal synchronization of oscillation.
Then, it from the viewpoint of beam shape (intensity distribution of 2 point light SP of overlapping), is said using the chart of Figure 13 Relationship between the pulsed illumination frequency Fz of the spot diameter Xs and light supply apparatus CNT of Mingguang City beam spot light SP.The horizontal axis of Figure 13 indicates The ruler of describing position or put light SP of the point light SP in the Y-direction along description line or the X-direction of the carry direction along substrate P Very little, the longitudinal axis indicates that the peak strength by independent point light SP is standardized as 1.0 relative intensity value.In addition, here, will individually put light The intensity distribution of SP is set as J1, it is assumed that is Gaussian Profile to be illustrated.
In Figure 13, individually the intensity distribution J1 of point light SP is relative to peak strength with 1/e2Intensitometer with 3 μm Diameter.Intensity distribution J2~J6 indicates for two pulsed quantities of this light SP to be staggered position in main scanning direction or sub-scanning direction The analog result for setting the intensity distribution (profile) of the integral operation obtained in substrate P when irradiation, makes the magnitude of misalignment of position respectively (spacing distance) is different.
In the chart of Figure 13, the point light SP that intensity distribution J5 shows two pulsed quantities is only staggered identical with 3 μm of diameter The case where spacing distance, intensity distribution J4 show the case where spacing distance of the point light SP of two pulsed quantities is 2.25 μm, intensity Distribution J3 shows the case where spacing distance of the point light SP of two pulsed quantities is 1.5 μm.According to the change of intensity distribution J3~J5 Change shows in intensity distribution J5, in the case where the point light SP for irradiating 3 μm of diameter with 3 μm of intervals such condition, integral operation Profile out is highest bag-like 2 respective centers of point light, and in the midpoint of 2 point light, standardized intensity is only 0.3 or so can be obtained.In contrast, in the case where the condition that 3 μm of diameter of point light SP is irradiated with 1.5 μm of intervals, integral fortune The profile of calculation is distributed in profile without apparent bag-like, clips the midpoint general planar of 2 point light.
In addition, intensity distribution J2 indicates 0.75 μm of spacing distance of the point light SP for making two pulsed quantities in Figure 13 In the case of integral operation profile, intensity distribution J6 indicates the half of the intensity distribution J1 for making spacing distance be set as a single point light SP It is worth the integral operation profile in the case where full duration (FWHM) i.e. 1.78 μm.
In this way, than the pulse for irradiating 2 point light with the shorter spacing distance CXs of the diameter Xs same intervals of light SP In the case where the condition of oscillation, due to being easy 2 wartys distributions of significant appearance, it is desirable to be set as to generate in exposure The optimal interval distance of intensity uneven (deterioration for describing precision).Such as the intensity distribution J3 or J6 of Figure 13, preferably with single point light The spacing distance CXs of half of diameter Xs of SP or so (such as 40~60%) is overlapped.This optimal spacing distance CXs is in master It can be by the pulsed illumination frequency Fz to light supply apparatus CNT and along the scanning speed for the point light SP for describing line on scanning direction Degree or sweep time Ts (rotation speed of rotary polygon mirror 97) at least one party could be adjusted to set, on sub-scanning direction The X-direction movement speed to scan frequency Fms (rotation speed of rotary polygon mirror 97) and substrate P of describing line can be passed through In at least one party could be adjusted to set.
For example, can not accurately adjust the absolute value of rotation speed of rotary polygon mirror 97 (when putting the scanning of light Between Ts) in the case where, be micro-adjusted by the pulsed illumination frequency Fz to light supply apparatus CNT, can will be on main scanning direction Point light SP spacing distance CXs and point light diameter Xs (size) ratio adjust in optimum range.
Like this, make 2 point light SP scanning direction be overlapped in the case where i.e. Xs > CXs in the case where, light supply apparatus Pulsed illumination frequency Fz is set as the relationship of Fz > LBL/ (TsXs) by CNT, that is, meets the pass of Fz=LBL/ (TsCXs) System.For example, being set as in the case where the pulsed illumination frequency Fz of light supply apparatus CNT is 100MHz by rotary polygon mirror 97 10 faces and with 10,000 rpm rotation when, with 1/e2Or the actual effect diameter Xs of point light as defined in half value full duration (FWHM) is 3 μm, energy Enough about half 1.5 μm of intervals (CXs) irradiations on each description line LL1~LL5 with diameter Xs from each delineation unit UW1~ The pulse laser beam (point light) of UW5.Light exposure uniformity when pattern plotter improves as a result, even micro pattern, also can It obtains based on the loyal exposure picture (resist picture) described the data, realizes high-precision description.
Moreover, needing the resolution for making to determine by the light switch speed of acousto-optic element (AOM) if h is arbitrary integer The impulse hunting frequency Fz of the light supply apparatus CNT of rate (response frequency Fss) and pulsed laser light source is converted into position or time It is afterwards relationship, the i.e. relationship of Fz=hFss of integral multiple.This is because the timing switched by the light of acousto-optic element (AOM) Without on/off during issuing pulsed light beam from light-pulse generator device CNT.
In the exposure device EX of first embodiment, due to using fiber amplifier FB1, FB2 and wavelength conversion section CU2 Wavelength conversion devices combination after pulsed laser source light supply apparatus CNT, so ultraviolet wavelength domain (400~ 300nm), it is easy to get this pulsed light with high frequency of oscillation.
Then, illustrate the method for adjustment of the drawing apparatus 11 of exposure device EX.Figure 14 is the exposure about first embodiment The flow chart of the method for adjustment of electro-optical device.Figure 15 is the relationship schematically shown between the reference pattern of rotating cylinder and description line Explanatory diagram.Figure 16 is to schematically show the reflected light from the reference pattern of spin in future rotating cylinder with the photoelectric sensing of bright-field light The explanatory diagram of the signal of device output.Control unit 16 is in order to grasp the school of the positional relationship of multiple delineation unit UW1~UW5 Standard rotates rotating cylinder DR as shown in figure 15.Rotating cylinder DR can also be carried with the saturating of description light beam LB permeable degree The substrate P of photosensitiveness.
As above-mentioned, reference pattern RMP and the outer peripheral surface of rotating cylinder DR are integrated.As shown in figure 15, in reference pattern RMP , arbitrary reference pattern RMP1 moves with the movement of rotating cylinder DR outer peripheral surface.Therefore, reference pattern RMP1 is from description After line LL1, LL3, LL5 pass through, pass through from line LL2, LL4 is described.For example, control unit 16 is in same datum pattern RMP1 from retouching In the case that line drawing LL1, LL3, LL5 pass through, scan the description light beam LB of delineation unit UW1, UW3, UW5.Moreover, control unit 16, in the case where same datum pattern RMP1 passes through from description line LL2, LL4, make the description light beam LB of delineation unit UW2, UW4 It scans (step S1).Therefore, reference pattern RMP1 becomes the benchmark for grasping the positional relationship of delineation unit UW1~UW5.
The photoelectric sensor 31Cs (Fig. 4) of above-mentioned calibration detection system 31 is via f- θ lens system 85 and includes scanning Scanning optics including device 83 detects the reflected light from reference pattern RMP1.Photoelectric sensor 31Cs is connected to control Portion 16, control unit 16 detect the detection signal (step S2) of photoelectric sensor 31Cs.For example, delineation unit UW1~UW5 presses every Describe line LL1~LL5 and each multiple for describing light beam LB are scanned into multiple rows along defined scanning direction.
For example, as shown in figure 16, delineation unit UW1~UW5 make describe light beam LB from describing starting position OC1 along It is to describe the length LBL (referring to Fig.1 2) of line that the direction (Y-direction) of the rotation centerline AX2 of above-mentioned rotating cylinder DR, which only carries out length, The first column scan SC1.Then, delineation unit UW1~UW5 makes to describe light beam LB from describing starting position OC1 along upper It is to describe the length LBL (referring to Fig.1 2) of line that the direction (Y-direction) for stating the rotation centerline AX2 of rotating cylinder DR, which only carries out length, Second column scan SC2.Then, delineation unit UW1~UW5 will describe light beam LB from describing starting position OC1 along above-mentioned The direction (Y-direction) of the rotation centerline AX2 of rotating cylinder DR only carry out length be describe line length LBL (referring to Fig.1 2) the Three column scan SC3.
Rotating cylinder DR around rotation centerline AX2 due to rotating, so the first column scan SC1, the second column scan SC2 and third X-direction position of the column scan SC3 on reference pattern RMP1 only has the difference of Δ P1, Δ P2.In addition, control unit 16 is also possible to Make the timing of each portion's movement by following sequences: carrying out retouching along the first column scan SC1 in the state of keeping rotating cylinder DR static The scanning of light beam LB is drawn, it is later, static after making rotating cylinder DR only rotate Δ P1 amount, carry out retouching along the second column scan SC2 The scanning of light beam LB is drawn, it is static after so that rotating cylinder DR is only rotated Δ P2 again, carry out the description light beam along third column scan SC3 The scanning of LB.
As described above, reference pattern RMP is set as being formed in the 2 bar chart cases intersected with each other of the outer peripheral surface of rotating cylinder DR Intersection point portion Cr1, Cr2 of RL1, RL2 are smaller than the length LBL of above-mentioned description line.Therefore, there are the first column scan SC1, in projection When the description light beam LB of two column scan SC2 and third column scan SC3, describes light beam LB and be at least irradiated in intersection point portion Cr1, Cr2.Line Pattern RL1, RL2 are formed on the surface of rotating cylinder DR as concave-convex.Using the concave-convex layer residual quantity on the surface rotating cylinder DR as spy When fixed condition, describe light beam LB be projeced into line pattern RL1, RL2 and the reflected beam portion that generates generated in reflected intensity it is poor. For example, as shown in figure 16, in the case where line pattern RL1, RL2 are the recess portion on the surface rotating cylinder DR, describing light beam LB projection When line pattern RL1, RL2, the reflected light reflected by line pattern RL1, RL2 is with bright-field by photoelectric sensor 31Cs light.
Control unit 16 detects the marginal position of reference pattern RMP based on the output signal from photoelectric sensor 31Cs psc1.The output signal obtained when for example, control unit 16 is based on the first column scan SC1 from photoelectric sensor 31Cs, storage first The median mpsc1 of the marginal position psc1 of column scan position data D sc1 and reference pattern RMP.
Then, the output signal that is obtained from photoelectric sensor 31Cs when control unit 16 is based on the second column scan SC2, storage the The median mpsc1 of the marginal position psc1 of two column scan position data D sc2 and reference pattern RMP.Then, 16 base of control unit The output signal obtained when third column scan SC3 from photoelectric sensor 31Cs, store third column scan position data D sc3 and The median mpsc1 of the marginal position psc1 of reference pattern RMP.
Control unit 16 is according to first row scan position data Dsc1, secondary series scan position data Dsc2 and third column scan The median mpsc1 of the marginal position psc1 of position data D sc3 and multiple reference pattern RMP, are found out by operation and are handed over each other The coordinate position of intersection point portion Cr1, Cr2 of 2 bar chart cases RL1, RL2 of fork.As a result, control unit 16 also can be to intersected with each other 2 bar chart cases RL1, RL2 intersection point portion Cr1, Cr2 and describe starting position OC1 relationship carry out operation.For other descriptions Unit UW2~5 are also identical, control unit 16 also can intersection point portion Cr1, Cr2 to 2 bar chart cases RL1, RL2 intersected with each other and The relationship for describing starting position OC2~OC5 (referring to Fig.1 1) carries out operation.In addition, above-mentioned median mpsc1 can also according to from The peak value of the signal of photoelectric sensor 31Cs output is found out.
More than, to photoelectric sensor 31Cs by the reflected light reflected by line pattern RL1, RL2 with bright-field light the case where It is illustrated, but photoelectric sensor 31Cs can also be by the reflected light reflected by line pattern RL1, RL2 with dark field light.Figure 17 be to schematically show the reflected light of the reference pattern of spin rotating cylinder in the future with the explanatory diagram of the photoelectric sensor of dark field light. Figure 18 is to schematically show that the reflected light of the reference pattern from spin in future rotating cylinder is exported with the photoelectric sensor of dark field light Signal explanatory diagram.As shown in figure 17, calibration detection system 31 configures between relay lens 94 and photoelectric sensor 31Cs There is the light-blocking member 31f of the light transmission department with ring-band shape.Therefore, photoelectric sensor 31Cs receives anti-by line pattern RL1, RL2 Edge scatter light or refraction light in the reflected light penetrated.For example, being rotating cylinder DR table in line pattern RL1, RL2 as shown in figure 18 In the case where the recess portion in face, when description light beam LB is projeced into line pattern RL1, RL2, photoelectric sensor 31Cs will be by line pattern The reflected light of RL1, RL2 reflection is with dark field light.
Control unit 16 detects the marginal position of reference pattern RMP based on the signal exported from photoelectric sensor 31Cs pscd1.For example, control unit 16 is based on the output signal obtained in the first column scan SC1 from photoelectric sensor 31Cs, storage the The median mpscd1 of the marginal position pscd1 of one column scan position data D sc1 and reference pattern RMP.Then, control unit 16 Based on the output signal obtained in the second column scan SC2 from photoelectric sensor 31Cs, secondary series scan position data are stored The median mpscd1 of the marginal position pscd1 of Dsc2 and reference pattern RMP.Control unit 16 is based in third column scan SC3 The output signal obtained from photoelectric sensor 31Cs stores the edge of third column scan position data D sc3 and reference pattern RMP The median mpscd1 of position pscd1.
Control unit 16 is according to first row scan position data Dsc1, secondary series scan position data Dsc2 and third column scan The median mpscd1 of the marginal position pscd1 of position data D sc3 and multiple reference pattern RMP, are found out each other by operation Intersection point portion Cr1, the Cr2 for 2 bar chart cases RL1, RL2 intersected.As a result, control unit 16 finds out intersected with each other 2 by operation The coordinate position of intersection point portion Cr1, Cr2 of bar chart case RL1, RL2 and the relationship for describing starting position OC1.
Similarly for other delineation unit UW2~5, control unit 16 can calculate 2 bar chart cases intersected with each other Intersection point portion Cr1, Cr2 of RL1, RL2 and the relationship for describing starting position OC2~OC5.In this way, photoelectric sensor 31Cs will be by In the case that the reflected light of line pattern RL1, RL2 reflection is with dark field light, the margin location of multiple reference pattern RMP can be improved Set the precision of pscd1.
As shown in figure 14, control unit 16 is found out and multiple description line LL1 according to the detection signal detected in step s 2 The configuration status of~LL5 or the corresponding adjustment information of mutual configuration error (calibration information) (step S3).Figure 19 is schematic Indicate the explanatory diagram of the mutual positional relationship of reference pattern of rotating cylinder.Figure 20 is to schematically show multiple opposite positions for describing line Set the explanatory diagram of relationship.It is such as above-mentioned, it configures the first of odd-numbered and describes line LL1, third describes line LL3 and the 5th and describes line LL5, as shown in figure 19, control unit 16 is stored in advance to be described line LL3 and the 5th and describes line LL5's to the first description line LL1, third Reference distance PL between each intersection point portion Cr1 detected.Similarly, control unit 16, which is also stored in advance, describes line to second LL2 and the 4th describes the reference distance PL between each intersection point portion Cr1 detected of line LL4.In addition, control unit 16 is also preparatory Store the reference distance Δ PL between each the intersection point portion Cr1 detected for describing line LL2 and third description line LL3 to second. In turn, control unit 16, which is also stored in advance, describes each intersection point portion detected that line LL4 and the 5th describes line LL5 to the 4th Reference distance Δ PL between Cr1.
For example, as shown in figure 20, the description starting position OC1 for describing line LL1 about the 1st, control unit 16 is based on from original The signal of spot detector 98 (referring to Fig. 7) has grasped positional relationship, so can find out intersection point portion Cr1 and describe starting position The distance between OC1 BL1.In addition, control unit 16 can describe the description start bit of line LL3 by origin detector 98 to third OC3 detection position is set, therefore, intersection point portion Cr1 can be found out and describe the distance BL3 of starting position OC3.Therefore, control unit 16 The position described starting position OC1 and describe starting position OC3 can be found out based on distance BL1, distance BL3 and reference distance PL Relationship, and store along distance, delta OC13 between the origin between the origin of description light beam LB for describing line LL1, LL3 scanning.Equally Ground, control unit 16 can detect position by the description starting position OC5 for describing line LL5 to the 5th by origin detector 98, because This, can find out intersection point portion Cr1 and describe the distance BL5 of starting position OC5.Therefore, control unit 16 can based on distance BL3, Distance BL5 and reference distance PL find out describe starting position OC3 and describe starting position OC5 positional relationship, and store along Distance, delta OC35 between origin between the origin of the description light beam LB of description line LL3, LL5 scanning.
Control unit 16 can detect position by the description starting position OC2 that origin detector 98 describes line LL2 to second, Therefore, intersection point portion Cr1 can be found out and describe the distance BL2 of starting position OC2.In addition, control unit 16 can be detected by origin Therefore device 98 can find out intersection point portion Cr1 and description starts to the description starting position OC4 detection position of the 4th description line LL4 The distance BL4 of position OC4.Therefore, control unit 16 can find out description based on distance BL2, distance BL4 and reference distance PL and start Position OC2 and the positional relationship for describing starting position OC4, and store along the description light beam LB for describing line LL2, LL453 scanning Origin between origin between distance, delta OC24.
In addition, due to describing starting position OC1 and describing starting position OC2 being asked via above-mentioned same reference pattern RMP1 Position out, so control unit 16 can be easily stored along between the origin of description light beam LB for describing line LL1, LL2 scanning Origin between distance, delta OC12.As described above, exposure device EX can find out multiple respective originals of delineation unit UW1~UW5 Point (describing starting point) mutual positional relationship.
In addition, control unit 16 can describe the intersection point portion detected in line LL3 according in the second description line LL2 and third Reference distance Δ PL between Cr1, to detect the error described starting position OC2 and describe starting position OC3 engagement.In turn, energy Enough reference distance Δ PL according between the intersection point portion Cr1 detected in the 4th description line LL4 and the 5th description line LL5, detection Describe starting position OC4 and describes the error of starting position OC5 engagement.
It is each describe line LL1~LL5 from describe starting position OC1~OC5 until describing end position EC1~EC5 During detect 2 intersection point portions Cr1, Cr2.Thereby, it is possible to detect from starting position OC1~OC5 is described to description end position Scanning direction until EC1~EC5.As a result, control unit 16 is able to detect each description line LL1~LL5 relative to along center The angular error in the direction (Y-direction) of line AX2.
Control unit 16 finds out and multiple configuration status or each other for describing line LL1~LL5 said reference pattern RMP1 The corresponding adjustment information of configuration error (calibration information).Reference pattern RMP comprising reference pattern RMP1 is between regulation The latticed reference pattern set is repeatedly carved away from (period) Pf1, Pf2.Therefore, control unit 16 is directed to each spacing Pf1, Pf2 weight Multiple reference pattern RMP finds out adjustment corresponding with multiple configuration status for describing line LL1~LL5 or mutual configuration error Information (calibration information), the relevant information of deviation of union and multiple relative positional relationships for describing line LL1~LL5.It is tied Fruit, control unit 16 can further increase corresponding with multiple configuration status for describing line LL1~LL5 or mutual configuration error Adjustment information (calibration information) precision.
Then, as shown in figure 14, control unit 16 is adjusted the processing (step S4) of description state.Control unit 16 be based on Multiple configuration status for describing line LL1~LL5 or the corresponding adjustment information of mutual configuration error (calibration information) and by compiling The rotary angle position of scale portion (rotating cylinder DR) GPa, GPb that code device read head EN1, EN2 are detected, adjust odd-numbered and The description position of delineation unit UW1~UW5 of even-numbered.Encoder head EN1, EN2 can be based on above-mentioned scale portions (rotating cylinder DR) GPa, GPb detects the conveying capacity of substrate P.
Figure 21 in the same manner as Figure 12 before, be schematically show substrate moving distance per unit time and it is mobile away from The explanatory diagram of the relationship between radical from interior contained description line.As shown in figure 21, encoder head EN1, EN2 is able to detect And the moving distance Δ X per unit time of memory substrate P.In addition it is also possible to by above-mentioned aligming microscope AM1, AM2 by The secondary multiple alignment mark Ks1~Ks3 of detection, find out and store moving distance Δ X.
On the moving distance Δ X per unit time of substrate P, multiple description line LL1 that delineation unit UW1 describes are with light Light beam line SPL1, SPL2 and SPL3 of beam spot light SP is described, and according to about the 1/2 of the spot diameter Xs of each light beam spot light SP The mode of (and Y-direction) overlapping is scanned in X direction.Equally, describe the light beam spot light SP of the side description terminal PTb of line LL1 Light beam spot light SP with the side description terminal PTb for describing line LL2 is as substrate P is to the movement of length direction and in the width of substrate P It spends on direction with overlap distance CXs engagement.
For example, when rotating cylinder DR or more is moved, in odd-numbered and even-numbered delineation unit UW1~UW5 X-direction description position generate offset, it is possible to create the difference of magnification of such as X-direction.Control unit 16 is removed slowing down rotating cylinder DR It, can be with the spacing distance of the X-direction of light beam line SPL1, SPL2 and SPL3 when transporting velocity (movement speed) of the substrate P of fortune CXs become smaller, the reduce mode of description multiplying power of X-direction is adjusted.On the contrary, spinning up removing for a substrate P for DR carrying When running speed degree (movement speed), it can be become larger with the spacing distance CXs of the X-direction of light beam line SPL1, SPL2 and SPL3, increase X The mode of the description multiplying power in direction is adjusted.More than, it is illustrated referring to Figure 21 to line LL1 is described, but retouched for other Line drawing LL2~LL5 is also identical.Control unit 16 can be based on the configuration status or mutual configuration with multiple description line LL1~LL5 The corresponding adjustment information of error (calibration information) and the scale portion (rotating cylinder DR) detected by encoder head EN1, EN2 The rotary angle position of GPa, GPb, change on the length direction of substrate P, substrate P moving distance Δ X per unit time, with Relationship in the moving distance between the radical of contained light beam line SPL1, SPL2 and SPL3.Therefore, control unit 16 can adjust Odd-numbered and even-numbered delineation unit UW1~UW5 is in the description position of X-direction.
Figure 22 is the explanatory diagram schematically illustrated with the pulsed light of the system clock synchronous light-emitting of light-pulse generator.Hereinafter, It is illustrated referring to Figure 21 to line LL2 is described, it is also identical for describing line LL1, LL3~LL5.Light supply apparatus CNT can be with work Light beam spot light SP is synchronously issued for the pulse signal wp of system clock SQ.By changing the frequency Fz of system clock SQ, pulse The pulse spacing Δ wp (=1/Fz) of signal wp also changes.The pulse spacing Δ wp of the timeliness is and each on describing line LL2 Spacing distance CXs on the main scanning direction of the point light SP of pulse is corresponding.Control unit 16 makes the light beam spot light for describing light beam LB Description line LL2 of the SP in substrate P only scans the length LBL for describing line.
Control unit 16 has during description light beam LB is scanned along description line LL2, when partly changing system The period of clock SQ, in the function of describing the arbitrary position increase and decrease pulse spacing Δ wp in line LL2.For example, in original system In the case that clock SQ is 100MHz, control unit 16 is during the length LBL of line is described in scanning with specific time interval (week Phase) system clock SQ is partly changed to such as 101MHz (or 99MHz).As a result, light beam spot light SP is in the length for describing line Spend the quantity increase and decrease of LBL.In other words, control unit 16 is during the length LBL of line is described in scanning, to provide time (1 time or more) Period distances partly increase and decrease the duty ratio of system clock SQ.The interval variation for the light beam spot light SP that light source CNT is generated as a result, The variable quantity of pulse spacing Δ wp, the mutual overlap distance CXs variation of light beam spot light SP.Moreover, the description beginning PTa of Y-direction Seem flexible with the distance for describing terminal PTb.
Illustrate as an example, in the case where describing the length LBL of line is 30mm, by its 11 equal part, each section of about 3mm's Describing length (period distances) increases and decreases pulse spacing Δ wp of the system clock SQ at 1.As illustrated in fig. 13, if will not lead Cause the model substantially deteriorated with the integral operation profile (intensity distribution) of the variation of the spacing distance CXs of 2 adjacent point light SP Enclose, the spacing distance CSx of such as benchmark be set as light diameter Xs (3 μm) 50%, then in contrast by pulse spacing Δ The increase and decrease amount of wp is set as ± 15% or so.If setting the increase and decrease of pulse spacing Δ wp, (spacing distance CSx is the straight of point light as+10% The 60% of diameter Xs), then length LBL describe line in discrete 10 at everywhere in, only swept to master with the point light of 1 pulsed quantity The mode for retouching 10% amount that direction extends diameter Xs misplaces.As a result, the length LBL of the description line after describing is with respect to 30mm Extend 3 μm.This refers to that the pattern being depicted in substrate P expands 0.01% (100ppm) along Y-direction.Even if as a result, on substrate P edge In the case that Y-direction is flexible, it also can correspondingly make depicting pattern flexible along Y-direction and be exposed.
It is configured to, such as can will increases and decreases the position of pulse spacing Δ wp when describing every 1 scanning of line LL1~LL5 Such as be preset as every 100 pulse of system clock SQ, every 200 pulse ... this arbitrary value.Make depicting pattern as a result, The stroke of main scanning direction (Y-direction) changes in the larger context, is carried out again according to the flexible and deformation dynamics of substrate P Rate amendment.It therefore, include the generation circuit of system clock SQ, the hair in the control unit 16 of the exposure device EX of present embodiment Raw circuit has the original clock signal for generating pulse spacing Δ wp as fixation should as the clock oscillation portion of system clock SQ, input Original clock signal and after only having counted preset number of pulses, until generating next clock pulses of system clock SQ The time shifting portion that increases and decreases relative to pulse spacing Δ wp of time.In addition, describing in line (length LBL), make system clock SQ The number of part of pulse spacing Δ wp increase and decrease corrected substantially than (ppm) according to the multiplying power of the Y-direction of the pattern to be described It determines, but in least situation, is also possible at least 1 in the sweep time Ts corresponding to the point light SP of length LBL.
In addition, response makes the system clock SQ of pulse spacing Δ wp part increase and decrease like this, filled from the light source of pulse laser The pulsed light beam for setting CNT output is jointly respectively automatically supplied to delineation unit UW1~UW5, therefore, is distinguished by description line LL1~LL5 The pattern of description is stretched along Y-direction with same ratio.Therefore, as illustrated by Figure 12 (or Figure 11), in order to maintain along Y-direction The adjacent joining accuracy described between line, so that the description respective description starting position OC1~OC5 of line LL1~LL5 (or describe End position EC1~EC5) it is corrected along the mode that Y-direction is displaced and describes timing.In turn, light deflector (AOM) 81 shown in Fig. 4 On/off switching in response to as describing the data serially ranking (arrangement of place value " 0 " or " 1 ") and carrying out for submitting, but Sending out for the place value can also be synchronous with pulse signal wp (Figure 22) of system clock SQ of the part increase and decrease of pulse spacing Δ wp.Tool For body, during in the case where generating 1 pulse signal wp and generating until 1 pulse signal wp, it is inclined that 1 place value is passed out into light The driving circuit for turning device (AOM) 81, when the place value is " 1 ", i.e. preceding 1 place value is " 0 ", as long as by light deflector (AOM) 81 On-state is switched to from off-state.
But control unit 16 can be based on the configuration status or mutual configuration error phase with multiple description line LL1~LL5 Displacement meter YN1, YN2, YN3, YN4's of the offset at corresponding adjustment information (calibration information) and the both ends detectable rotating cylinder DR Detection information, the description position in Y-direction to adjust odd-numbered and even-numbered delineation unit UW1~UW5, with Offset the Y-direction error generated by the offset rotation of rotating cylinder DR.In addition, control unit 16 can be based on and multiple description lines The configuration status of LL1~LL5 or the corresponding adjustment information of mutual configuration error (calibration information) and detectable rotating cylinder DR The detection information of displacement meter YN1, YN2, YN3, YN4 of the offset at both ends, change are retouched with odd-numbered and even-numbered The length (the length LBL for describing line) in the Y-direction of unit UW1~UW5 is drawn, with payment because the offset rotation of rotating cylinder DR is produced The error of raw Y-direction.
In addition, control unit 16 can be based on the configuration status or mutual configuration error phase with multiple description line LL1~LL5 Corresponding information adjustment information (calibration information) and detected by aligming microscope AM1, AM2, adjust odd-numbered and even The X-direction of delineation unit UW1~UW5 of number number or the description position in Y-direction, to offset the X-direction or Y-direction of substrate P Error.
The exposure device EX of first embodiment includes the mobile mechanism 24 as displacement correction mechanism, the mobile mechanism 24 Such as above by the description light beam LB of each from multiple delineation unit UW1~UW5, comprising being formed in substrate P Centered on regulation point, that is, rotary shaft I in multiple description faces for describing line LL1~LL5, relative to first in above-mentioned description face Optical platform 23 is displaced the second optical platform 25.Pass through the configuration status or mutual configuration with multiple description line LL1~LL5 The corresponding adjustment information of error (calibration information), it is whole relative in x-direction and y-direction in multiple description line LL1~LL5 In the case that at least 1 have error, control unit 16 can carry out drive control to the driving portion of mobile mechanism 24, make the second optics Platform 25 is displaced the displacement of compensating error at least one party of x-direction and y-direction.
When being displaced the second optical platform 25 at least one party of x-direction and y-direction, the 4th reflecting mirror shown in fig. 6 59 are displaced the displacement to X-direction or Y-direction.Especially the displacement of the Y-direction of the 4th reflecting mirror 59 makes to reflect from third When the description light beam LB of mirror 58 is reflected to +Y direction, it is allowed to be displaced to Z-direction.Therefore, pass through the light in the first optical system 41 The displacement to Z-direction is corrected by beam displacement mechanism 44.As a result, relative to after the 4th reflecting mirror 59 the second optical system 42 and Third optical system 43 maintains light beam LB to pass through correct optical path.
In addition, in the exposure device EX of first embodiment, because of the configuration status with multiple description line LL1~LL5 Or the mutual corresponding adjustment information (calibration information) of configuration error and multiple description line LL1~LL5 are relative to X-direction and Y In the case that at least there is error in 1 direction of direction, control unit 16 can be in a manner of becoming the displacement of compensating error to light beam Displacement mechanism 44 carries out drive control, makes to be formed in description line LL1~LL5 in substrate P to X-direction or Y-direction micro-displacement.
In turn, in the exposure device EX of first embodiment, because of the configuration status with multiple description line LL1~LL5 Or mutual configuration error corresponding adjustment information (calibration information) and multiple describe the odd-numbered in line LL1~LL5 Or the description line of even-numbered is relative to x-direction and y-direction in the case that at least there is error in 1 direction, control unit 16 can be with The mode of displacement as compensating error carries out drive control to pattern displacement mechanism 45, makes the even number being formed in substrate P Description line LL2, LL4 of number is to X-direction or Y-direction micro-displacement, and minor adjustment is compiled with the odd number being formed in substrate P Number description line LL1, LL3, LL5 relative positional relationship.
In addition, control unit 16 also can be based on the configuration status or mutual configuration error with multiple description line LL1~LL5 It corresponding adjustment information (calibration information) and is detected by displacement meter YN1, YN2, YN3, YN4 or aligming microscope AM1, AM2 Information, adjust delineation unit UW1~UW5 Y multiplying power.For example, the picture of telecentricity f- θ lens contained by f- θ lens system 85 It is high directly proportional to incidence angle.Therefore, in the case where only adjusting the Y multiplying power of delineation unit UW1, control unit 16 can be based on adjustment Information (calibration information) and the information detected by displacement meter YN1, YN2, YN3, YN4 or aligming microscope AM1, AM2, it is individual to adjust Thus the focal length f of whole f- θ lens system 85 adjusts Y multiplying power.In such whole adjustment mechanism, it can also combine for example For carry out the modified bent plate of multiplying power, telecentricity f- θ lens multiplying power correction mechanism, for carry out adjustment of displacement to point amendment (halving) more than any of (tiltable parallel plate glass).In addition, by making with the rotation of regulation rotation speed The rotation speed of rotary polygon mirror 97 is slightly variable, can slightly change each point light SP of description synchronous with system clock SQ The spacing distance CXs (the mutual lap of consecutive points light is made slightly to be staggered) of (pulsed light), as a result can also adjust Y multiplying power.
The exposure device EX of first embodiment includes the mobile mechanism 24 as rotating mechanism, and the mobile mechanism 24 is as above It states by coming from the respective description light beam LB of multiple delineation unit UW1~UW5, to include the multiple descriptions being formed in substrate P Centered on regulation point, that is, rotary shaft I in the description face of line LL1~LL5, the opposite first optical platform 23 in above-mentioned description face Rotate the second optical platform 25.By opposite with multiple configuration status for describing line LL1~LL5 or mutual configuration error The adjustment information (calibration information) answered, make multiple description line LL1~LL5 relative to the angled error of Y-direction in the case where, control Portion 16 can carry out drive control to the driving portion of mobile mechanism 24 in a manner of becoming the rotation amount of payment angular error, make the The rotation of two optical platforms 25.
In addition, in the case where producing needs and individually carrying out rotating modified situation to each delineation unit UW1~UW5, it can By making f- θ lens system 85 shown in Fig. 8 and the second cylindrical lens 86 rotate small quantity around optical axis AXf, make each description line LL1~LL5 individually small rotation (inclination) in substrate P.Since the light beam LB scanned by rotary polygon mirror 97 is swept non- It retouches and (optically focused) is imaged along the bus of cylindrical lens 86 on direction, so by cylindrical lens 86 around the rotation of optical axis AXf, it can Make each description line LL161~LL5 rotation (inclination).
As long as the exposure device EX of first embodiment handles the description position that the control device of above-mentioned step S4 carries out The processing of adjustment it is at least one kind of.In addition, the exposure device EX of first embodiment can also combine above-mentioned step S4's Control device carry out descriptions position adjust processing and handled.
Pass through the method for adjustment of substrate board treatment described above, in the exposure device EX of first embodiment, nothing Required to inhibit the test exposure in the adjacent mutual bonding error of pattern P T1~PT5 of the width direction (Y-direction) of substrate P, Or its number is greatly decreased.Therefore, the exposure device EX of first embodiment can shorten test exposure, drying and development work The time-consuming calibrating operation such as confirmation operation of sequence, exposure results.Moreover, the exposure device EX of first embodiment can press down Make the waste of the substrate P of the sub-quantity fed back by test exposure.The exposure device EX of first embodiment can take earlier Obtain adjustment information (calibration information) corresponding with multiple configuration status for describing line LL1~LL5 or mutual configuration error.The The exposure device EX of one embodiment can be according to the configuration status or mutual configuration error with multiple description line LL1~LL5 Corresponding adjustment information (calibration information) is modified in advance, and thus, it is possible to the positions in easily modified chi direction or Y-direction Each ingredients such as shifting, rotation, multiplying power.Moreover, the exposure device EX of first embodiment can be improved the exposure being overlapped in substrate P Precision.
In addition, the exposure device EX of first embodiment is with light deflector 81 comprising acousto-optic element, by rotary polygon mirror 97 couples of description light beam LB be illustrated for spot scan, but in addition to spot scan, are also possible to using DMD (Digital Micro mirror Device: digital micromirror elements) or SLM (Spatial light modulator: spatial light modulator) The mode of depicting pattern.
[second embodiment]
Then, illustrate the exposure device EX of second embodiment.In addition, in this second embodiment, in order to avoid with The duplicate record of one embodiment, is only illustrated the part being different from the first embodiment, for first embodiment Identical structural element marks appended drawing reference same as the first embodiment and is illustrated.
In the exposure device EX of second embodiment, the photoelectric sensor 31Cs and non-detection benchmark of detection system 31 are calibrated Pattern (can also act as reference mark) RMP and the reflected light (scattering for detecting alignment mark Ks1~Ks3 in substrate P Light).Alignment mark Ks1~Ks3 configures the one party in each description line LL1~LL5 by multiple delineation unit UW1~UW5 Y-direction on substrate P on position.When the point light SP scanning for describing light beam LB is to alignment mark Ks1~Ks3, by being aligned The scattering light of Ks1~Ks3 reflection is marked to be received by photoelectric sensor 31Cs in bright-field or dark field.
Marginal position of the control unit 16 based on the signal detection alignment mark Ks1~Ks3 exported from photoelectric sensor 31Cs. Moreover, in the same manner as first embodiment, control unit 16 can according to the detection signal detected by photoelectric sensor 31Cs come Find out adjustment information (calibration information) corresponding with multiple configuration status for describing line LL1~LL5 or mutual configuration error.
In addition, control unit 16 can be based on the configuration status or mutual configuration error phase with multiple description line LL1~LL5 Corresponding information adjustment information (calibration information) and detected by aligming microscope AM1, AM2, adjust odd-numbered and even The X-direction of delineation unit UW1~UW5 of number number or the description position in Y-direction, to offset substrate P in X-direction or the side Y Upward error.When the point light SP for describing light beam LB is projeced into alignment mark Ks1~Ks3, on alignment mark Ks1~Ks3 Photosensitive layer is photosensitive, and alignment mark Ks1~Ks3 may be damaged by pressure in technique later.Be preferably provided with multiple row alignment mark Ks1~ Ks3, aligming microscope AM1, AM2 read the alignment mark Ks1~Ks3 not damaged by pressure by exposure.
Therefore, the exposure device EX of second embodiment can be in pattern plotter data comprising making light deflector (AOM) 81 data turned on/off so that can also by near alignment mark Ks1~Ks3 that exposure is damaged by pressure with The point light SP for describing light beam LB is scanned, not point of irradiation light near the alignment mark Ks1~Ks3 that will not be damaged by pressure by exposure SP.Thereby, it is possible to one side to be exposed by describing light beam LB, almost obtains calibration information in real time on one side, and can also read Alignment mark Ks1~Ks3 (position of substrate P).
The exposure device EX of second embodiment and the exposure device EX of first embodiment are identical, do not need for inhibiting Its number is greatly decreased in the test exposure of bonding error.In addition to this, in the exposure device EX of second embodiment, energy Enough on one side to substrate P exposing patterns, multiple configuration status for describing line LL1~LL5 or mutual configuration relation etc. are measured on one side Control information, and obtain corresponding adjustment information (calibration information) (in nearly real time) in advance.Therefore, in the second embodiment party It, can be based on the control information or adjustment information (calibration information) measured in advance, on one side to device figure in the exposure device EX of formula Case exposure, the amendment and adjustment for gradually carrying out keeping specified accuracy on one side, can easily suppress in view of describing head side more Description list in formula as each error percentages such as problems, X-direction or displacement error, rotation error, magnification error in Y-direction The reduction of joining accuracy between member.The exposure device EX of second embodiment can be by the overlapping in substrate P when overlapping exposures as a result, Precision maintains high state.
< device making method >
Then, illustrate device making method referring to Figure 23.Figure 23 is the stream for indicating the device making method of each embodiment Cheng Tu.
In the device making method shown in Figure 23, firstly, carrying out what the self-emission device such as using organic EL was realized Function, the performance design of display panel, and with the circuit pattern of the designs such as CAD and Wiring pattern (step S201).In addition, Prepare the supply use for being wound with the flexible substrate P (resin film, metal foil film, plastics etc.) of the substrate as display panel in advance Roller (step S202).In addition, the scroll-like substrate P prepared in step S202 is also possible to change on its surface as needed The substrate of property is pre-formed the substrate of bottom (such as minute asperities based on ink-jet mode) or is laminated with photonasty in advance Functional membrane or hyaline membrane (insulating materials) substrate.
Then, form that (film is partly led by the electrode or wiring, insulating film, TFT that constitute display panel device in substrate P Body) etc. compositions backplane level, and shone with what the mode being laminated on the bottom plate formed that the self-emission devices such as organic EL are constituted Layer (display pixel portion) (step S203).It also include the processing based on following process etc.: before use in step S203 Each embodiment in the exposure device EX that illustrates photoresist layer is exposed and is allowed to the existing photoetching work developed Sequence, the substrate P that will be replaced photoresist and be coated with photonasty silane coupling agent carry out pattern exposure and are modified as surface Close and distant fluidity is to form the exposure process of pattern, carry out pattern exposure to photosensitive catalyst layer to assign selective plating Reproducibility simultaneously passes through the wet type operation or silver-colored by containing that electroless plating method forms the pattern (wiring, electrode etc.) of metal film The printing process of the depicting pattern such as the conductive ink of nanoparticle.
Then, for each the display panel device continuously manufactured in strip substrate P with roll fashion, cutting substrate P is bonded protective film (interlayer of resistance to environment) or colored filter film etc. in each display panel device surface, carrys out assembly device (step S204).Then, carry out whether display panel device proper function or meet the inspection work of desired performance and characteristic Sequence (step S205).As above, display panel (flexible display) can be manufactured.In addition, being made on flexible strip plate shape substrates Electronic device be not limited to display panel, be also possible to as between the various electronic components for being equipped on automobile or electric car etc. The flexible wiring net of the conducting wire (matching tape) of connection.
Description of symbols
1 device inspection apparatus
11 drawing apparatus
12 substrate conveying mechanisms
13 device frames
14 rotation position testing agencies
16 control units
23 first optical platforms
24 mobile mechanisms
25 second optical platforms
31 calibration detection systems
31Cs photoelectric sensor
31f light-blocking member
73 the 4th beam splitters
81 light deflectors
83 scanners
96 reflecting mirrors
97 rotary polygon mirrors
97a rotary shaft
97b reflecting surface
98 origin detectors
AM1, AM2 aligming microscope
DR rotating cylinder
EN1, EN2, EN3, EN4 encoder head
EX exposure device
I rotary shaft
LL1~LL5 describes line
PBS polarising beam splitter
UW1~UW5 delineation unit

Claims (7)

1. a kind of substrate board treatment sweeps the point light by the light beam for carrying out intensity modulated on substrate with defined It retouches length and carries out main scanning along one-dimensional square, on one side in the direction that the description line with the main scanning based on described light intersects to institute It states light beam and the substrate carries out subscan, thus describe predetermined pattern on the substrate,
The substrate board treatment is characterized in that having:
Supporting member has the bearing surface for supporting the substrate；
Handling device moves the substrate supported by the supporting member along the direction of the subscan；
Pulsed laser source is come with the pulsed light beam in several KHz~hundreds of MHz repetition luminous frequency Fz output ultraviolet wavelength domain As the light beam；
Modulator, in response to it is corresponding with the pattern that should be depicted on the description line it is serial rank describe the data, come Intensity modulated is carried out to the pulsed light beam from the pulsed laser source；
Delineation unit has for delivering the light beam by the modulators modulate to the description line and making the modulation One-dimensionally the light beam of the scanning optics of deflection scanning and the confession deflection scanning is incident and on the substrate for light beam The light beam projection optics system that optically focused is projected at the mode of light；And
The length for describing line is being set as LBL, the light beam is put light in the scanning of the length LBL by control unit When time is set as Ts, described light is set as Xs along the size on the direction for describing line, by the pulsed laser source Luminous frequency Fz is set as meeting the relationship of Fz >=LBL/ (TsXs).
2. substrate board treatment according to claim 1, which is characterized in that
The pulsed laser source includes the amplifier and Wavelength changing element using optical fiber.
3. substrate board treatment according to claim 1, which is characterized in that
The modulator includes by the pulsed light beam in the state and the state of non-injection to the scanning optics incidence Between the light switching element that switches over, the answer frequency of the upper limit of the light switching element is being set as Fss, by arbitrary integer When being set as h, the luminous frequency Fz of the pulsed laser source is set to the relationship of Fz=hFss.
4. substrate board treatment according to claim 2, which is characterized in that
The control unit includes
Clock generating circuit, to the pulsed laser source in a manner of exporting the pulsed light beam according to the luminous frequency Fz Assign the clock signal of frequency Fz；And
Time shift portion, by the length LBL the sweep time Ts in a period of 1 at or discrete many places Everywhere in, the time interval relative to the clock pulses under the frequency Fz makes continuous two clocks in the clock signal The time interval of pulse is with defined sliding scale.
5. substrate board treatment according to claim 4, which is characterized in that
The pulsed laser source response sweeps the time interval between the clock pulses described by the time shift portion Clock pulses after retouching at 1 in a period of time Ts or increasing and decreasing everywhere in discrete many places, vibrates the pulsed light beam.
6. substrate board treatment according to claim 5, which is characterized in that
The pulsed laser source has laser source, which responds the time interval between the clock pulses in the scanning In a period of time Ts 1 at or discrete many places everywhere in increase and decrease after clock pulses, using pulse light generation as plant Sub-light and to the fundamental wave of laser of the amplifier incidence.
7. substrate board treatment described according to claim 1~any one of 6, which is characterized in that
The scanning optics is the rotary polygon mirror with multiple reflectings surface,
The light beam projection optics system include for by the modulator intensity modulated and by the anti-of the rotary polygon mirror Penetrate the f- θ lens system and cylindrical lens of the light beam incidence of face reflection.
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