TW201535626A - 半導體裝置及模組 - Google Patents

半導體裝置及模組 Download PDF

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TW201535626A
TW201535626A TW103122860A TW103122860A TW201535626A TW 201535626 A TW201535626 A TW 201535626A TW 103122860 A TW103122860 A TW 103122860A TW 103122860 A TW103122860 A TW 103122860A TW 201535626 A TW201535626 A TW 201535626A
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semiconductor device
sides
terminal
electrode
source
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TW103122860A
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Miwako Suzuki
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Toshiba Kk
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Publication of TW201535626A publication Critical patent/TW201535626A/zh

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Abstract

本發明提供一種可降低源極連接器之電阻之半導體裝置及模組。 實施形態之半導體裝置包含半導體晶片、第1及第2導電板。上述第1導電板搭載上述半導體晶片，且周緣包含至少4邊。上述第2導電板覆蓋上述半導體晶片及上述第1導電板之至少2邊。

Description

半導體裝置及模組 [相關申請案]
本申請案以日本專利申請案2014-50691號(申請日：2014年3月13日)為基礎申請案並享受其優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之所有內容。
本發明之實施形態係關於一種半導體裝置及模組。
伴隨低電阻之晶片之開發進展，無法忽視半導體裝置之電阻。例如於藉由如覆蓋晶片表面整體之金屬板(例如源極連接器)而電性連接於源極電極之情形時，與藉由打線接合等而電性連接之情形相比實現更低之電阻值。然而，要求半導體裝置之電阻之進一步降低。
本發明提供一種可降低源極連接器之電阻之半導體裝置及模組。
實施形態之半導體裝置包含半導體晶片、第1及第2導電板。上述第1導電板搭載上述半導體晶片，且周緣包含至少4邊。上述第2導電板覆蓋上述半導體晶片、及上述第1導電板之至少2邊。
1~5、11‧‧‧半導體裝置
20、30‧‧‧突出部
201‧‧‧配線基板
BP1、BP3、BP4、BP11、BP100‧‧‧汲極框架
C‧‧‧半導體晶片
DT1、DT3、DT4、DT100‧‧‧汲極端子
ED‧‧‧汲極電極
EG‧‧‧閘極電極
ES‧‧‧源極電極
GT‧‧‧閘極端子
M1‧‧‧模組
R‧‧‧樹脂
S1~S4‧‧‧半導體晶片之周緣之邊
S11~S14、S110~S140‧‧‧源極連接器之周緣之4邊
S51~S54‧‧‧汲極框架之邊
ST1~ST4、ST100‧‧‧源極端子
TP1~TP5、TP100‧‧‧源極連接器
WR‧‧‧金屬線
X、Y、Z‧‧‧方向
圖1係表示實施形態1之半導體裝置之概略構成之俯視圖。
圖2係包含圖1所示之半導體裝置之模組之一例之剖面圖。
圖3係包含圖1所示之半導體裝置之模組之一例之立體圖。
圖4係參考例之半導體裝置之俯視圖。
圖5係表示實施形態1之半導體裝置之一變化例之俯視圖。
圖6係表示實施形態2之半導體裝置之概略構成之俯視圖。
圖7係表示實施形態3之半導體裝置之概略構成之俯視圖。
圖8係表示實施形態4之半導體裝置之概略構成之俯視圖。
圖9係表示實施形態5之半導體裝置之概略構成之俯視圖。
以下，對於若干實施形態，一面參照圖式一面進行說明。於圖式中，對同一部分標註同一參照編號，並適當省略其重複說明。
須留意隨附圖式係分別為了促進發明之說明與其理解者，各圖中之形狀或尺寸、比例等存在與實際之裝置不同之部位。對於該等不同點，若為業者則可參照以下之說明與公知之技術而適當進行設計變更。
(1)實施形態1
圖1係表示實施形態1之半導體裝置之概略構成之俯視圖。
本實施形態之半導體裝置1包含汲極框架BP1、半導體晶片C、源極連接器TP1、及閘極端子GT。半導體晶片C於本實施形態中包含功率MISFET(Metal Insulator Semiconductor Field Effect Transistor，金屬絕緣半導體場效應電晶體)，且包含源極電極ES、汲極電極ED(參照圖2)及閘極電極EG。
半導體晶片C係搭載於汲極框架BP1，且藉由焊料等而連接於汲極框架BP1。
汲極電極ED於本實施形態中係設置於半導體晶片C之背面側，且電性連接於汲極框架BP1。
閘極電極EG係經由金屬線WR而連接於閘極端子GT。
源極電極ES係設置於半導體晶片C之上表面側，且以接觸該源極 電極ES而覆蓋半導體晶片C之方式配設源極連接器TP1，藉此，源極電極ES係電性連接於源極連接器TP1。於本實施形態中，源極電極ES、汲極電極ED及閘極電極EG例如分別與第1至第3電極對應。
汲極框架BP1及源極連接器TP1均由導體形成，於本實施形態中例如係由銅(Cu)形成。該點對於下述汲極框架BP3、BP4、BP11及源極連接器TP2~TP5亦相同。汲極框架BP1及源極連接器TP1於本實施形態中例如與第1及第2導電板對應。
半導體晶片C於本實施形態中具有矩形之平面形狀，其周緣包含4邊S1~S4。
源極連接器TP1於圖1之紙面左右之端部向下方彎曲後再次水平地延設(參照圖2)，於該延設部分分別設置有源極端子ST1、ST2。源極端子ST1、ST2之底面係以與汲極框架BP1之背面成為同一面之方式構成。
本實施形態中之半導體裝置1之特徵之一在於：源極連接器TP1具有以與構成半導體晶片C之周緣形狀之4邊S1~S4分別平行之4邊S11~S14為周緣的矩形狀，於該等邊中沿Y方向延伸、且於X方向上相互對向之邊S11、S13之部分設置有源極端子ST1、ST2。
汲極端子DT1係設置於沿與邊S11、S13相鄰、且在X方向上延伸之邊S12的汲極框架BP1之一邊S52。
如此，根據本實施形態之半導體裝置1，源極連接器TP1係以覆蓋半導體晶片、及汲極框架BP1之對向之2邊S51、S53之方式配置，進而，沿構成源極連接器TP1之平面形狀之周緣之4邊S11~S14中的不止一邊、而至少2邊S11、S13，分別設置有複數個源極端子ST1、ST2，因此源極電流於源極連接器TP1內流向ST1側與ST2側兩者。藉此，可降低源極連接器之電阻。
圖2及圖3表示於配線基板201安裝有圖1所示之半導體裝置1之模 組之一例。圖2係與沿圖1之切斷線A-A之剖面對應的模組M1之剖面圖，圖3係模組M1之立體圖。於圖2及圖3所示之模組M1中，半導體晶片C之源極電極ES係經由源極連接器TP1而電性連接於配線基板201。半導體晶片C之閘極電極EG係經由金屬線WR及閘極端子GT而電性連接於配線基板201。半導體晶片C之汲極電極ED係經由汲極框架BP1而電性連接於配線基板201。
又，如圖2所示，模組M1包含密封半導體裝置1之樹脂R。
根據本實施形態之模組M1，提供一種於配線基板201上安裝有降低源極連接器之電阻之半導體裝置1的模組。該點於將下述實施形態2至5之半導體裝置11、2至5安裝於配線基板201之情形時亦相同。
圖4為參考例。圖4之半導體裝置100包含汲極框架BP100、汲極框架BP100上之半導體晶片C、及半導體晶片C上之源極連接器TP100。
於本參考例之半導體裝置100中，構成源極連接器TP100之周緣形狀之4邊S110~S140中，僅於邊S110側設置有源極端子ST100。
通常，封裝體之電阻基本上係由汲極框架之電阻與源極連接器之電阻構成。於本參考例之半導體裝置100中，汲極電流自汲極框架BP100流過半導體晶片C內，通過源極連接器TP100而於源極端子ST100流出。此時，對於汲極框架BP100，由於汲極端子DT100至半導體晶片C之距離較短，因此電阻較低。
然而，源極電流之路徑為自半導體晶片C之源極電極ES至源極連接器TP100之源極端子ST100，其距離比汲極電流之路徑長。因此，源極連接器TP100之電阻比汲極框架BP100之電阻高。
因此，本案發明者如上述實施形態1般，於構成源極連接器TP1之周緣之4邊中至少2邊均設置源極端子，藉此使源極電流流向ST1側與ST2側之兩者而降低源極連接器之電阻，伴隨於此，將汲極端子之 位置配置於沿未設置有源極端子之其餘之邊的位置。於實施形態1之例中，於源極連接器TP1之沿邊S12之邊S52設置汲極端子DT1。
但，汲極端子DT1無須僅沿邊S52配置，亦可配置於與邊S52對向之邊S54側。
圖5表示圖1所示之實施形態1之半導體裝置1之一變化例。
根據與圖1之對比明顯可知，本變化例之半導體裝置11除包含沿汲極框架BP11之邊S52而設置之汲極端子DT1以外，進而包含沿與邊S52對向之邊S54而設置之汲極端子DT2。
藉由此種構成，根據本變化例之半導體裝置11，除實現降低源極連接器TP1之電阻以外，亦一併實現降低汲極框架BP11之電阻。
(2)實施形態2
圖6係表示實施形態2之半導體裝置之概略構成之俯視圖。
根據與圖1之對比明顯可知，本實施形態之半導體裝置包含源極連接器TP2代替圖1之源極連接器TP1。源極連接器TP2包含突出部20，該突出部20自與相互對向之邊S11、S13相鄰之邊S14向外側延伸且覆蓋汲極框架BT1之邊S54，於該突出部20進而設置有源極端子ST3。半導體裝置2之其他構成與圖1所示之半導體裝置1實質上相同。
如此，根據本實施形態之半導體裝置2，由於包含分別設置於相鄰之3邊S11、S14、S13之源極端子ST1~ST3，因此源極電流流向3條路徑。藉此，可進一步降低源極連接器TP2之電阻。
(3)實施形態3
圖7係表示實施形態3之半導體裝置之概略構成之俯視圖。
根據與圖6之對比明顯可知，本實施形態之半導體裝置3包含源極連接器TP3代替圖6之源極連接器TP2，且包含汲極框架BP3代替汲極框架BP1。
源極連接器TP3包含突出部30，該突出部30自與邊S14對向之邊S12向外側延伸且覆蓋汲極框架BP3之邊S62，向汲極框架BP3側彎曲後向外側水平地延伸，於該突出部30進而設置有源極端子ST4。
汲極框架BP3具有以4邊S61~S64為周緣形狀之矩形狀，汲極端子DT3係設置於背面側。
如此，根據本實施形態之半導體裝置3，包含沿所有相鄰之4邊S11~S14而分別設置之源極端子ST1~ST4，因此使源極電流流向4條路徑。藉此，可更進一步降低源極連接器TP3之電阻。
又，根據本實施形態之半導體裝置3，由於源極連接器TP3覆蓋半導體晶片C及汲極框架BP3之大部分，因此亦能夠以高效率散熱。
(4)實施形態4
圖8係表示實施形態4之半導體裝置之概略構成之俯視圖。根據與圖1之對比明顯可知，本實施形態之半導體裝置4包含於邊S53設置有汲極端子DT4之汲極框架BP4、半導體晶片C、源極連接器TP4、及閘極端子GT。
源極連接器TP4具有L字型之平面形狀，且沿相互相鄰之2邊S11、S14而分別設置有源極端子ST1、ST3。
如此，根據本實施形態之半導體裝置4，沿構成源極連接器TP4之周緣之4邊S11~S14中相鄰之2邊S11、S14而分別設置有源極端子ST1、ST3，因此源極電流於源極連接器TP4內流向ST1側與ST3側之兩者。藉此，可降低源極連接器TP4之電阻。
再者，於本實施形態中，列舉了於汲極框架BP4之邊S53設置有汲極端子DT4之形態，但並不限定於此，例如亦可於邊S52設置汲極端子DT4。
(4)實施形態5
圖9係表示實施形態5之半導體裝置之概略構成之俯視圖。
本實施形態之半導體裝置5包含源極連接器TP5，該源極連接器TP5具有與使圖8之源極連接器TP4經紙面上下反轉而成之形狀類似的L字形狀，且沿相鄰之2邊S11、S12而分別設置有源極端子ST1、ST4。半導體裝置5之構成除源極連接器TP5之L字形狀之配置方向不同、及源極端子ST1、ST4係沿邊S11、S12設置之方面以外，與圖8所示之半導體裝置4之構成實質上相同。
根據本實施形態之半導體裝置5，藉由此種構成亦可降低源極連接器TP5之電阻。
再者，於本實施形態中，汲極框架BP4之汲極端子DT4不限定於邊S53，例如亦可設置於邊S54。
根據以上敍述之至少一個實施形態之半導體裝置，藉由源極連接器包含沿構成源極連接器之周緣之第1至第4邊中至少2邊設置且連接於源極電極的源極端子，而可降低源極連接器之電阻。
又，根據以上敍述之至少一個實施形態之模組，可提供安裝有源極連接器之電阻降低之半導體裝置之模組。
已對本發明之若干實施形態進行了說明，但該等實施形態係作為例而提出者，並不意在限定發明之範圍。該等實施形態能夠以其他各種形態實施，於不脫離發明主旨之範圍內，可進行各種省略、置換、變更。該等實施形態及其變形包含於發明之範圍或主旨中，且同樣地包含於申請專利範圍所記載之發明及其均等之範圍內。
1‧‧‧半導體裝置
BP1‧‧‧汲極框架
C‧‧‧半導體晶片
DT1‧‧‧汲極端子
EG‧‧‧閘極電極
ES‧‧‧源極電極
GT‧‧‧閘極端子
S1~S4‧‧‧半導體晶片之周緣之邊
S11~S14‧‧‧源極連接器之周緣之4邊
S51~S54‧‧‧汲極框架之邊
ST1‧‧‧源極端子
ST2‧‧‧源極端子
TP1‧‧‧源極連接器
WR‧‧‧金屬線
X、Y、Z‧‧‧方向

Claims (11)

  1. 一種半導體裝置，其包含：半導體晶片；第1導電板，其搭載上述半導體晶片，且周緣包含至少4邊；及第2導電板，其覆蓋上述半導體晶片、及上述第1導電板之至少2邊。
  2. 如請求項1之半導體裝置，其中上述半導體晶片包含第1至第3電極，上述第1導電板包含電性連接於上述第1電極之第1端子，且進而包含連接於上述第2電極之第2端子，上述第2導電板包含設置於上述至少2邊之第3端子。
  3. 如請求項2之半導體裝置，其中上述第1端子係沿分別鄰接於上述2邊之另外2邊之至少1邊而設置。
  4. 如請求項3之半導體裝置，其中上述第1端子係分別沿上述另外2邊而設置。
  5. 如請求項1之半導體裝置，其中上述半導體晶片包含第1至第3電極，上述第1導電板包含電性連接於上述第1電極之第1端子，且進而包含連接於上述第2電極之第2端子，上述第2導電板包含沿上述4邊中相鄰之2邊而設置之第3端子。
  6. 如請求項5之半導體裝置，其中上述第1端子係沿上述相鄰之2邊以外之其餘之邊中之任一者而設置。
  7. 如請求項1之半導體裝置，其中上述半導體晶片包含第1至第3電極，上述第1導電板包含電性連接於上述第1電極之第1端子，且 進而包含連接於上述第2電極之第2端子，上述第2導電板包含沿上述4邊中相鄰之3邊而設置之第3端子。
  8. 如請求項7之半導體裝置，其中上述第1端子係沿上述相鄰之3邊以外之其餘之邊而設置。
  9. 如請求項1之半導體裝置，其中上述半導體晶片包含第1至第3電極，上述第1導電板包含電性連接於上述第1電極之第1端子，且進而包含連接於上述第2電極之第2端子，上述第2導電板包含分別沿上述4邊而設置之第3端子。
  10. 如請求項9之半導體裝置，其中上述第1端子係設置於上述第1導電板之背面。
  11. 一種模組，其包含：如請求項1至10中任一項之半導體裝置；及基板，其安裝有上述半導體裝置。
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