TW201528519A - 用於ｍｏｓ電晶體之沈積在ｉｖ族基板上的ｉｉｉ－ｖ族通道的高阻層 - Google Patents

用於ｍｏｓ電晶體之沈積在ｉｖ族基板上的ｉｉｉ－ｖ族通道的高阻層 Download PDF

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TW201528519A
TW201528519A TW103128305A TW103128305A TW201528519A TW 201528519 A TW201528519 A TW 201528519A TW 103128305 A TW103128305 A TW 103128305A TW 103128305 A TW103128305 A TW 103128305A TW 201528519 A TW201528519 A TW 201528519A
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layer
iii
high resistance
channel
semiconductor device
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TW103128305A
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TWI630721B (zh
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Glenn Glass
Anand Murthy
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Intel Corp
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Abstract

本案揭示用於半導體裝置，例如金屬氧化物半導體(MOS)電晶體的使用高阻層於III-V族通道層與IV族基板間之技術。該高阻層可以用以最小化(或消除)直接流通過該通道以外之源極流至汲極的路徑的電流。在一些情況下，高阻層可以是III-V族寬能帶隙層。在這些情況下，該寬能帶隙層可以具有大於1.4電子伏(eV)的能帶隙，並甚至可以具有大於2.0eV的能帶隙。在其他情況下，該寬能帶隙層可以例如透過氧化或氮化部份或整個被轉換為一絕緣體。所得結構可以與平坦、鰭式、或奈米線/奈米絲電晶體架構一起使用，以協助防止基板洩漏問題。

Description

用於MOS電晶體之沈積在IV族基板上的III-V族通道的高阻層
本發明關係於MOS電晶體之沈積在IV族基板上的III-V族通道的高阻層。
電晶體為半導體裝置，其經常被用作為能選擇地關閉電流的開關。在金屬氧化物半導體(MOS)電晶體中，該電流係想要在該裝置導通狀態之時，直接經由通道區由源極流向汲極。然而，分流路徑可能使得該電流流經其他路徑，而繞過該通道區域。此等分流路徑可能使得電晶體具有高洩漏並甚至可能短路。
102‧‧‧提供步驟
104‧‧‧沈積步驟
106‧‧‧沈積步驟
108‧‧‧蝕刻步驟
109‧‧‧移除步驟
110‧‧‧轉換步驟
111‧‧‧填充步驟
112‧‧‧填充步驟
114‧‧‧形成步驟
113‧‧‧蝕刻及替換製程
1000‧‧‧計算系統
1002‧‧‧主機板
1004‧‧‧處理器
1006‧‧‧通訊晶片
圖1a例示依據本發明之一或更多實施例之沈積然後圖案化方法，用以製造在III-V族通道層與IV族基板間具有高阻層的積體電路。
圖1b例示依據一或更多實施例之圖案化然後沈積方法，用以製造在III-V族通道層與IV族基板間具有高阻層的積體電路。
圖2a-c例示依據一實施例之執行圖1a的方法所形成的例示結構，其包含為III-V寬能帶隙層的高阻層。
圖3a-f例示依據一實施例之執行圖1a的方法所形成的例示結構，其包含已經被轉換為絕緣體層的高阻層。
圖4a-f例示依據一實施例之執行圖1b的方法所形成的例示結構，其包含為III-V族寬能帶隙層的高阻層。
圖5a-i例示依據一實施例之執行圖1b的方法所形成的例示結構，其包含已經被轉換為絕緣體層的高阻層。
圖6例示依據本案實施例所組態的一或更多積體電晶體結構實施的計算系統。
將了解的是，這些圖並不必然依規格繪出或想要限制所主張的揭示至所示特定組態。例如，雖然部份圖式大致顯示直線、直角或平滑面，但積體電路結構的實際實施在所處理設備與技術被使用的真實世界限制時，可能具有較不完美的直線、直角或一些特性可能具有表面拓樸或非平滑。簡短地說，這些圖式僅用以顯示例示結構。
【發明內容與實施方式】
本案所揭示之技術為用以在例如金屬氧化物半導體(MOS)電晶體的半導體裝置的III-V族通道層與IV族基板間使用高阻層。該高阻層可以用以最小化(或消除)直接流通過該通道以外之由源極流至汲極的路徑之電流。在一些情況下，高阻層可以為III-V族寬能帶隙層。在這些情況下，該寬能帶隙層可以具有大於1.4電子伏(eV)的能帶隙，並甚至可以具有大於2.0eV的能帶隙。在其他情況下，該寬能帶隙層可以例如透過氧化或氮化部份或整個被轉換為一絕緣體(或最少轉換為較高能帶隙半導體)。所得結構可以與平坦、鰭式、或奈米線/奈米絲電晶體架構一起使用，以協助防止基板洩漏問題。各種變化在本案揭示下將是明顯可知的。
一般概要
如先前所解釋，電晶體應能關斷電流及分流路徑應被避免。沈積III-V族材料在IV族基板(例如，矽基板)上建立區域，其中來自III-V族層的材料(或III-V族材料沈積製程的前驅物)被擴散入該基板及/或來自該基板的材料擴散入該III-V族材料層。另外，接近基板/III-V族界面的區域係被嚴重地失序，而有堆疊缺陷、差排及晶域邊界。這些缺陷可能增加整體導電率或提供電流洩漏用的分流路徑。在金屬氧化物半導體(MOS)電晶體中通道層的摻雜必須小心控制並維持在臨限位準以下，以避免電流洩漏。當在IV族基板上沈積III-V族材料時，這 些及其他材料相容性問題可能造成不想要的分流路徑，分流路徑中電流直接流經該通道以外的由源極至汲極的其他路徑。
因此，依據一或更多實施例，本案提供使用高阻層於用於例如MOS電晶體的半導體裝置的III-V族通道層與IV族基板之間。此等技術可以用以電隔離該III-V族通道層與所有以下的層。注意於此所用之“電隔離”並不必然完全或整個電隔離。例如，在一些實施例中，高阻層可以對電流造成高電阻，這可以作動以在正常操作狀態下，基本上隔離該通道層與所有以下的層。在一些實施例中，該高阻層可以為III-V族寬能帶隙層(例如，具有大於1.4電子伏(eV)的能帶隙)，而在其他實施例中，該高阻層可以開始為III-V族寬能帶隙材料，但然後被至少部份轉換為絕緣體材料。該高阻層可以用以最小化(或消除)直接流通過該通道以外之由源極流至汲極的路徑之電流。
該III-V族層的沈積(該寬能帶隙層與該通道層)可以在圖案化該IV族基板之前或之後執行。例如，在一些實施例中，該等層可以被沈積在整個基板上(或其大部份)，以建立基板/寬能帶隙層/通道層胚板，而在其他實施例中，該III-V族層可以更具選擇性地沈積成為形成在該基板中之溝渠內的堆疊，並將隨後加以說明。在沈積該III-v族層在該基板之後，該寬能帶隙層可以使用例如鰭下氧化物(UFO)製程被轉換為絕緣體。該UFO製 程可以包含遮罩該III-V族層堆疊，以覆蓋並保護該通道層，然後曝露該通道堆疊至一轉換氣體，以例如對該寬能帶隙層造成氧化或氮化。如果該寬能帶隙層並未被轉換為絕緣體，則該整個III-V層堆疊可以為半導電並可以使用作為該通道區域的一部份。如果該寬能帶隙層被轉換為絕緣體，則該通道堆疊將具有作用頂層，其將保持為半導電，同時，(取決於轉換的完整性)下部份的一部份或全部將可以被轉換為絕緣體。
依本案揭示可以了解，所得通道堆疊可以用於一或更多n-通道半導體裝置(例如，用於n-MOS)。在一些實施例中，所得結構(包含III-V族多層通道堆疊或具有III-V族通道層於至少部份轉換絕緣體層上的通道堆疊)可以與平坦、鰭式或奈米線/奈米絲電晶體架構一起使用。該等結構也可以與p-通道擴散區域(例如，用於p-MOS)整合，例如藉由遮罩該III-V族層堆疊並沈積適當材料(例如，Si、Ge、或IV族材料的合金)於已經形成III-V族層堆疊間的空間中，並將更詳細說明如下。
該通道層也可以包含具有能帶隙為或低於1.4eV的高電載體遷移率材料，例如，銻化銦(InSb)、砷化銦鎵(InGaAs)、砷化鎵(GaAs)、砷化銦(InAs)、或其他由本案揭示所能了解的適當III-V族材料。該高阻層可以被選擇以具有大於1.4eV的能帶隙(及在一些例子中，大於2.0eV)，並可以包含材料，例如砷化銦鋁(InAlAs)、磷化銦鋁(InAlP)、磷化鋁 (AlP)、銻化鋁(AlSb)、砷化鋁(AlAs)、磷化鎵銦(GaInP)、磷化銦(InP)、磷化鎵(GaP)、或可以由本案揭示所了解的其他適當III-V族材料。在一些實施例中，寬能帶隙層材料可以根據在通道層材料加以選擇(或反之亦然)，以確保在兩III-V族層間之能帶隙差為例如至少0.4eV。
用於該等III-V族層的選擇厚度可以根據若干不同考量，例如，選擇材料、提供給通道層的電隔離的想要數量、製程(例如，成本)及環境(例如毒性)考量，及該寬能帶隙層將被轉換為絕緣體與否，只提出幾個例示考量。在一些實施例中，該III-V族層的厚度可以為小於7500、5000、2500、或1500埃厚，或由本案揭示所可以了解的更少之其他適當量。在一些實施例中，該等III-V族層可以各個具有一單一組成物，其中，在各個層的沈積之間有突然改變。在其他實施例中，則該等III-V族材料的沈積可以包含由寬能帶隙層材料至通道層材料分級式、步階式、或平移由寬能帶隙層材料至通道層材料沈積。在一些實施例中，材料及組成物梯度的選擇可以降低差排及堆疊缺陷密度至每平方公分1E6差排或更低。因此，由本案揭示可以了解，用於III-V族通道的多層方法可以提供更高品質膜。
於分析(例如組成物映圖)時，依據一或更多實施例所組態的結構將有效地顯示高阻層材料被包夾在III-V族通道層材料與IV族基板材料之間。在一些實施例 中，也可以是其他層(例如，在基板/III-V族界面的高度缺陷層)。垂直於半導體裝置的閘極線或通道區域的剖面的掃描電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、及/或能量分散x-射線(EDX)分析可以用以量測該裝置的層的組成物。能帶隙為組成物的直接結果。因此，依據本案實施例組態的半導體裝置的各個層的能帶隙可以根據例如該層的組成物加以決定。在一些實施例中，高阻層的組成物可以為具有能帶隙被決定為大於III-V族通道材料的III-V族寬能帶隙材料。在其他實施例中，高阻層的組成物可以為III-V族寬能帶隙材料，其係部份或整個被轉換為絕緣體材料。
依據本案一實施例組態的電晶體結構在至少對有關於直接通過該通道以外的源極與汲極區間之路徑的電流流動提供優於傳統結構的改良的較高電阻。對於高效能電晶體，任何數量的半導體裝置或電路需要藉由使用高阻層於III-V族通道層與IV族基板間而獲得益處。於此所述的各種技術將可以提供成本優勢並可以對於相較於現行技術的後端抛棄的製程廢水最小化其毒性，特別是在，沈積較薄III-V族層(例如具有低於1500埃厚的層)的實施例中。再者，於此所述之各種技術係相容於互補MOS(c-MOS)積集，因為該等結構係相容於互混p-型及n-型區域。各種組態與變化將由本案揭示所了解。
方法與架構
圖1a顯示依據本案之一或更多實施例之一沈積然後圖案化方法，用以製造積體電路，其在III-V族通道層與IV族基板間具有高阻層。如隨後討論，圖1b顯示依據一或更多實施例之圖案化然後沈積方法，用以製造積體電路，其在III-V族通道層與IV族基板間具有高阻層。由本案揭示可以了解，高阻層包含寬能帶隙層，其可以或可不被轉換為絕緣體。因此，用於通道堆疊可以被使用以表示在寬能帶隙層上的通道層堆疊與在絕緣體層(例如被轉換的寬能帶隙層)上的通道層堆疊。
圖2a-c例示依據一實施例之執行圖1a之方法所形成的例示結構，包含為III-V族寬能帶隙層的高阻層。在此實施例中，示於該方法中的虛線方塊並未被執行，其包含轉換步驟110，其將該寬能帶隙層轉換為絕緣體。再者，在此實施例中，該寬能帶隙層可以為半導體通道堆疊的一部份，其將如以下所討論為一或更多後續形成MOS電晶體所使用。圖3a-f顯示依據一實施例的執行圖1a的方法所形成的例示結構，其包含已經被轉換為絕緣體層的高阻層。在此實施例中，所示於此方法中之虛線方塊被執行。再者，在此實施例中，只有頂通道層保持為半導體狀態，以如以下所討論供一或更多後續形成MOS電晶體所使用。
示於圖1a的例示方法包含提供步驟102，提供一IV族基板。該IV族基板可以包含矽(Si)、鍺(Ge)、錫(Sn)、及/或碳(C)的任意組合，例如 Si、SiGe、Ge等等。該方法繼續以沈積III-V族層於該基板上。首先，III-V族寬能帶隙層係在沈積步驟104被沈積於基板上並然後III-V族通道層在沈積步驟106被沈積於該寬能帶隙層上。沈積步驟104中，該III-V族寬能帶隙層可在該III-V族寬能帶隙層與該IV族基板的界面處造成初始高度缺陷成長區。可以由本案揭示了解，該寬能帶隙層可以被用以電隔離該通道層與所有以下的層，包含該IV族基板與在該IV/III-V族界面的高度缺陷成長區。如以下所討論，該III-V族成長可以以平坦方式執行於整個基板上或例如在該基板的圖案化區域的大面積中(例如，>1umx>1um)。在該等III-V族層已經被沈積步驟104、106後，所得結構係被顯示於圖2a及3a作為該基板/寬能帶隙層/通道層胚板。
在一些實施例中，該III-V族寬能帶隙層材料可以被選擇以晶格匹配該III-V族通道層材料。晶格匹配可以提供最小化膜應力的優點並也可以允許能帶隙變化的區域被形成，而不引入結晶結構的變化。另外，該III-V族寬能帶隙層材料可以被選擇以具有較III-V族通道層材料為高的能帶隙，以電隔離該通道層與以下的層。注意於此所述之“電隔離”並不必然完全或整個電隔離。例如，寬能帶隙層的相較於通道層的較高能帶隙可以對電流造成高電阻，這可以作動以在正常操作狀態下，基本上隔離通道層與所有以下各層。在一些實施例中，通道層可以包含具有為或低於1.4eV能帶隙的高電載體遷移率材料。在一些 此等實施例中，用於寬能帶隙層的材料可以被選擇，使得其具有至少1.4、1.6、1.8、2.0或2.2eV的能帶隙，或其他根據所選擇通道層材料的適當能帶隙。在一些實施例中，寬能帶隙層與通道層材料可以被選擇以在該等III-V族層間完成想要的能帶隙差。例如，該等III-V族材料可以被選擇使得該差為至少0.2、0.4、0.6、0.8或1.0eV，或由本案揭示所了解的其他適當能帶隙差。
在一些實施例中，通道層的材料例可以包含：銻化銦(InSb)、砷化銦鎵(InGaAs)、砷化鎵(GaAs)、砷化銦(InAs)、或由本案揭示了解的其他適當III-V族材料。例如，在一些實施例中，該通道層可以包含任何具有能帶隙小於1.4eV的III-V族材料。在一些實施例中，用於寬能帶隙層的材料例可以包含：砷化銦鋁(InAlAs)、磷化銦鋁(InAlP)、磷化鋁(AlP)、銻化鋁(AlSb)、砷化鋁(AlAs)、磷化鎵銦(GaInP)、磷化銦(InP)、磷化鎵(GaP)、或由本案揭示所了解的其他適當III-V族材料。例如，在一些實施例中，該寬能帶隙層可以包含任何具有能帶隙大於1.4eV的III-V族材料。在一些實施例中，通道層與寬能帶隙層的材料的組合可以分別包含：InGaAs與InAlAs、InGaAs及GaP、GaAs及InAlP、GaAs及AlAs、GaAs及GaInP、InAs及A1Sb、或任何本案揭示所了解的其他任何適當III-V族材料的結合。在III-V族材料的一例示組合中，通道層可以包含InGaAs，其具有大約0.7eV的能帶隙，及寬能帶隙 層可以包含InAlAs(例如In0.75Al0.25As)，其具有大約2eV的能帶隙。用於通道層與寬能帶隙層的各種其他適當III-V族材料將由本案揭示所了解。
該III-V族層的厚度可以決定於所選擇材料、沈積技術、及提供給通道層的想要電隔離的量而改變。在一些例子中，該III-V族層的厚度也可以根據有關於沈積此等層的製造成本加以選擇。例如，沈積未摻雜III-V族材料的很厚層在大量製造情況下，由於有關於沈積此等層的高成本而變得不實際。在一些情況下，對環境上的影響也可以是有關於III-V族層的厚度的另一考量。例如，該厚度可以被選擇以最小化對環境的毒性，例如當包含使用高阻層作為各種於此所述以製造包含電晶體的積體電路被處理時。該III-V族層厚度的另一考量為是否該寬能帶隙層予以被如此所討論轉換為絕緣體。在一些實施例中，該III-V族層的厚度可以為低於7500、5000、2500或1500埃厚，或低於由本案揭示所能了解的其他適當量。在一般看來，該等III-V族層可以具有允許該寬能帶隙層電隔離開該通道層與以下層的任意厚度，而不論該寬能帶隙層予以被轉換為絕緣體否。該等寬能帶隙與通道層並不被限制為任何特定尺寸。
用於III-V族層的沈積技術可以包含化學氣相沈積(CVD)、快速熱CVD(RTCVD)、分子束磊晶術(MBE)、氣體源MBE(GS-MBE)、或任何其他適當沈積技術。在一例示實施例中，沈積InP的III-V族通道堆 疊作為該寬能帶隙層及InGaAs作為通道層可以包含一製程，其在500℃，利用三甲基銦(TMI)及磷酸(PH3)，具有50的III/V族比例，及20托，其後跟隨有利用TMI、三甲基鎵(TMG)、及胂(AsH3)之在500℃的III/V族比50及20托的製程。在一些實施例中，該等III-V族材料的沈積可以包含在寬能帶隙層材料與該通道層材料的沈積間之突然變化。在此等實施例中，突然變化可以增加通道層與以下的層間之電隔離。在其他實施例中，該III-V族材料的沈積由該寬能帶隙層材料至該通道層材料可以包含分級式、步階式、或平移式沈積。在此等實施例中，該沈積可以為分級式、步階式或平移式，以增加膜品質。在一些實施例中，沈積技術可以用以改變該通道層及/或該寬能帶隙層的能帶隙，以例如協助該通道層的電隔離。在一例示實施例中，該寬能帶隙層的能帶隙可以藉由合金化小原子分數的氮(例如，低於10%、5%、或1%)而增加。在一些實施例中，用於該III-V族通道堆疊的材料與組成物梯度可以被選擇以降低差排及堆疊缺陷密度。在一例示實施例中，穿過差排及堆疊缺陷密度可以被降低至每平方公分1E6差排或更少。
再參考圖1a，在該III-V族通道堆疊(該寬能帶隙層與該通道層)被沈積在基板上後，以形成如圖2a及3a所示之胚板後，該方法持續以蝕刻步驟108，以形成溝渠圖案。任何適當乾式及/或濕式蝕刻製程均可以使用。圖2b及3b顯示依據例示實施例之在蝕刻完成後的 結構。在一些實施例中，溝渠的形成可以根據一或更多後續形成MOS電晶體的想要結構加以選擇。例如，該等溝渠可以建立線性擴散區，如果它們窄小的話(例如<30nm)可以被認為是鰭部，或者如果它們較寬，則可以認為是平坦擴散區。以本案揭示明顯看出，任何適當溝渠大小與形狀可以被想要地使用。
示於圖1a的方法持續於轉換步驟110，選用地轉換寬能帶隙層為絕緣體。如前所述，示於圖2a-c的例示結構並不包含轉換步驟110，因此，寬能帶隙層被維持為在通道堆疊中的高阻層。可以由圖2c中看出，示於圖1a(跳過選用轉換步驟110)的方法持續以例如一或更多介電材料(例如二氧化矽)的STI材料填充所蝕刻溝渠的填充步驟112。該STI填充的深度可以根據一或更多後續形成MOS電晶體的想要結構加以選擇。例如，STI填充可以為如圖2c所示之凹陷，以允許該通道堆疊由該平面突出。該STI深度係如所示實施例中，只有通道層由該平面突出；然而，在另一實施例中，STI深度可以更淺，以允許該寬能帶隙層與該通道層突出。在另一實施例中，該STI填充可以與通道層的頂部同高，例如用以與後續平坦MOS電晶體結構一起使用。可以由本案揭示了解，任何適當STI填充深度可以加以選擇。如前所述，寬能帶隙層保持該通道堆疊的一部份並被用以最小化(或消除)直接通過該通道以外的由源極至汲極的路徑的電流流動。
該方法持續於形成步驟114，以形成一或更多 MOS電晶體於所得結構上。此形成步驟114可以包含任何在通道堆疊鰭上的閘極、源極及汲極的適當形成(例如，如圖2c所示)。然而，根據該擴散區的大小及/或根據該STI填充深度，該MOS電晶體結構也可以是平坦或奈米線/奈米絲結構。在一些實施例中，與例如Si、Ge或IV族材料合金的不同組成物的適當p-通道材料鰭的整合可以藉由遮罩該III-V族通道堆疊鰭及沈積具有不同組成物的材料在已經形成III-V族鰭間之空間中加以完成。在此等實施例中，該III-V族通道堆疊鰭可以用於n-通道電晶體(例如，n-MOS)及不同組成物的擴散或鰭可以用於p-通道電晶體(例如，p-MOS)，因此，可以完成c-MOS整合。
依據一實施例，示於圖3a-f的結構包含轉換步驟110。在如前所述之溝渠圖案蝕刻步驟108後，該方法持續以轉換步驟110以轉換該寬能帶隙層為絕緣體。結果，在此例示實施例中，被轉換絕緣體層變成在通道堆疊中的高阻層。在一些實施例中，轉換步驟110可以包含鰭下(under-fin)氧化(UFO)製程，使得該寬能帶隙層被轉換為絕緣體，但通道層則否。此一UFO製程可以包含在通道堆疊上(例如，在通道層上)形成硬遮罩，如圖3c所示。任何適當硬遮罩製程可以被使用及硬遮罩材料可以包含氮化矽(SiN)、氮化硼(BN)、氧化鋁(Al2O3)、或任何其他適當材料。在一些實施例中，間隔層(未示出)或其他保護層可以被沈積在通道層的側邊 上，以提供通道層的額外保護。圖3d顯示在寬能帶隙層已經被轉換為絕緣體後所得之結構，可以了解，電流將無法通過該絕緣體。
在一些實施例中，轉換步驟110係藉由氧化或氮化以藉由退火該結構，使得該寬能帶隙層被轉換為絕緣體加以進行。取決於該退火製程的持續時間，實際上整個寬能帶隙層可以部份或整個被轉換為介電材料，其將該通道層與所有以下的層電隔離。通常，寬能帶隙層的外露表面將通常被首先轉換，隨後是寬能帶隙層的剩餘部份，應有足夠時間指定給該退火製程。在一例示實施例中，氧化(或氮化)氛圍被使用，其中氧(或氮)氣在退火製程期間被提供。氣流可以為任何適當流量(例如，由約1sccm至約50sccm的氧流量)，及退火溫度範圍可以取決結構的材料加以改變。在一例示實施例中，轉換可以藉由在含氧環境中，以400℃的爐氧化持續30分鐘加以執行。在一般情況下，寬能帶隙層可以被以不損壞或負面影響被形成的裝置的整體結構或效能的溫度下加以轉換。該持續時間與該轉換製程時的其他因素可能影響所轉換層的所得結果，如氧/氮濃度的程度或百分比，或被轉換的寬能帶隙層材料的百分比。也可以使用各種其他熱退火或氧化(或氮化)設計，例如，氧佈植及/或例如影響鄰近該寬能帶隙層的氧化材料。
該寬能帶隙層被轉換為絕緣體的高阻層的所得材料可以取決於該寬能帶隙層的初始III-V族材料及/或 所使用的轉換技術而定。例如，在一些實施例中，鋁(Al)可以加入寬能帶隙層材料中，以增加相對於不含鋁材料的氧化及氮化率。在包含鋁的寬能帶隙層材料的此等實施例中，該寬能帶隙層可以被轉換為例如氧化鋁(Al2O3)的介電質。在其他實施例中，銦(In)及鎵(Ga)的氧化物將似乎不會形成具有可用機械特質的氧化物。在一些此等實施例中，該轉換製程可以使得該被氧化寬能帶隙層被如同氣隙般處理。該氧化物可以被移除，使其變成真氣隙或者變成為非堅固(例如，傾向於破裂及粉碎)的材料。一旦寬能帶隙層被轉換，則硬遮罩可以被移除(例如，使用濕/乾式蝕刻的任意組合)並且由蝕刻步驟108所形成之溝渠可以被以填充步驟112填充。
圖3e顯示在寬能帶隙層已經被轉換成絕緣體及溝渠已經被填充STI絕緣材料後的所得結構。注意在一些情況中，被轉換的絕緣體層材料及STI填充材料可以為相同材料。在此等情況下，在轉換製程中所形成的絕緣體層即使由相同材料構成，仍可以與另一鄰近後續加入電隔離材料(例如，STI填充材料)區分。同時注意，該STI填充係被顯示為與通道層相同平面，這可以適用於例如一或更多後續形成的平坦MOS電晶體。圖3f顯示在閘極、源極及汲極區被形成步驟114形成在平坦通道層之後的此一例示平坦MOS結構。如前所述，該結構可以包含例如藉由以例如Si、Ge，或IV族材料的合金的適當p-通道材料填充如於圖3e所示之溝渠，整合p-通道電晶體，因 此，可以完成c-MOS整合。
如前所述，圖1b顯示依據一或更多實施例之一種圖案化然後沈積方法，用以製造在III-V族通道層與IV族基板間具有高阻層的積體電路。圖1b所示之方法係類似於圖1a所示之方法，如上所述，除了在圖1b所示之方法(及在此所述)，該III-V族層通道堆疊係被沈積於被圖案化並蝕刻出該IV族基板的溝渠中，相反於有關圖1a所述之先III-V族層沈積技術。圖4a-f例示一例示結構，其依據一實施例係被在如圖1b的方法被執行所形成者，包含為III-V族寬能帶隙層的高阻層。在此實施例中，方法中所示之虛線方塊包含用以將寬能帶隙層轉換為絕緣體的製程，其係未被執行。圖5a-i例示出圖1b的方法被執行所形成的例示結構，其包含已經被轉換為絕緣體層的高阻層。在此實施例中，示於方法中之虛線方塊被執行。
示於圖1b中之例示方法包含提供步驟102提供一IV族基板，如於圖4a及5a所示。如前所述，該IV族基板可以包含矽(Si)、鍺(Ge)、錫(Sn)，及/或碳(C)的任意組合，例如，Si、SiGe、Ge等。該方法持續蝕刻步驟108以在該基板中蝕刻一圖案溝渠，如於圖4b及5b所示。任何適當乾及/或濕式蝕刻製程均可以使用。在示於圖4c中的實施例中，該方法持續以填充步驟112以STI材料(例如，先前所述者)填充該等構渠，並也可以包含研磨/平坦化製程。或者，在示於圖5c的實施 例中，該方法持續以填充步驟112，以可以移除以曝露出後續沈積寬能帶隙層至氧化或氮化環境的犧牲STI(sSTI)材料(例如犧牲氧化物)填充溝渠，以如前所述將之轉換為絕緣體。該方法持續以蝕刻步驟113以蝕刻在基板中之溝渠並以沈積包含寬能帶層與通道層的III-V族堆疊替換該等溝渠。先前有關寬能帶隙與通道層(包含材料、厚度及沈積技術)的討論係等同地應用於此(除了該等在基板溝渠中沈積的層外，而不是先前所述全面沈積在基板上)。圖4d及5d顯示在該等溝渠蝕刻後的結構，以及圖4e及4d顯示在沈積該III-V族層後的所得結構。
在圖4a-f中所示的實施例中，該寬能帶隙層並未被轉換為絕緣體。相反地，寬能帶隙保持為該通道堆疊的一部份並被用以最小化(或消除)沿著直接通過該通道以外的由源極至汲極路徑的電流流動。因此，圖1b的方法可以持續以形成步驟114形成一或更多MOS電晶體在如圖4e所示的所得結構上。例如，旋轉示於圖4e中的結構90度以顯示沿著線a-a’的結構部份，鰭式MOS電晶體結構(包含閘極、源極及汲極)可以隨後被形成在通道堆疊上，如圖4f所示。注意該STI填充(例如圖4c-e所示)係被作成凹陷，以形成所示鰭式通道結構。有關於STI填充深度的先前討論係可等同地應用。然而，MOS電晶體結構也可以根據擴散區的大小及/或依據STI填充深度而為平坦或奈米線/奈米絲結構。
在一些實施例中，在圖1b的方法中，被蝕刻 及替換(步驟)113之部份IV族基板鰭可以被遮罩並留下以排除它們不受蝕刻以整合p-通道電晶體(例如，p-MOS)。或者，雙蝕刻及替換製程(包含遮罩)可以用以建立適當p-通道材料的III-V通道堆疊與通道堆疊的次組，該p-通道材料與基板(例如，用於Si基板的Ge鰭)不同。在此等包含p-通道區域的實施例中，該III-V通道堆疊鰭可以用以n-通道電晶體(例如，n-MOS)及IV族鰭可以用於p-通道電晶體(例如，p-MOS)，因此，可以完成c-MOS整合。
在於圖5a-i所示的實施例中，該寬能帶隙層係被轉換為絕緣層。再參考圖1b，及由先前所述蝕刻及替換製程113繼續，該方法接著移除步驟109以移除該sSTI材料，如於圖5f所示。任何適當移除製程可以被使用(例如，取決於sSTI材料的乾/濕式蝕刻)。注意，於此例示實施例中，該寬能帶隙層的一部份係在sSTI被移除後被曝露，因為形成以作成如於圖5d中所示的溝渠被切割入該sSTI材料。在其他實施例中，溝渠可以被形成以曝露出或多或少的寬能帶隙層。在sSTI材料被移除後，該方法持續以轉換步驟110，以轉換該寬能帶隙層為絕緣體。有關於轉換步驟110，該寬能帶隙被轉換為絕緣體的先前討論係於此被等同地應用。例如，在氧化/氮化寬能帶隙層(未示出)時，硬遮罩可以被用以覆蓋並保護通道層。在寬能帶隙層被轉換步驟110轉換為絕緣層(例如於圖5g所示)後，先前包含sSTI材料的溝渠可以被填 充步驟111，填充永久STI材料。圖5h顯示在填充步驟111已經被執行後的結構。注意，該STI填充係在此例子中為凹陷，以允許該通道堆疊(包含通道層與所轉換絕緣層)的一部份被曝露。
圖1b的方法可以持續以形成步驟114，形成一或更多MOS電晶體於示於圖5h的所得結構上。例如，旋轉示於圖5h中的結構90度，以顯示沿著線b-b’的結構部份，鰭式MOS電晶體結構(包含閘極、源極及汲極)可以隨後被形成在通道堆疊上，如於圖5i所示。然而，根據通道堆疊結構的架構及/或根據STI凹陷深度，MOS電晶體結構也可以平坦或奈米線/奈米線結構。如前所述，該結構可以包含藉由排除IV族基板的部份或與遮罩層的雙處理，整合p-通道電晶體，以例如建立III-V族通道堆疊與IV族通道堆疊的次組，因此，可以完成c-MOS整合。
將可以了解，在圖1a-b及於此所述之方法可以使用任何適當標準半導體製程加以執行，包含微影、化學氣相沈積(CVD)、原子層沈積(ALD)、旋塗沈積(SOD)、物理氣相沈積(PVD)、濕式及乾式蝕刻。可以由本案揭示了解，任意數量的適當材料、層幾何、及形成製程可以被使用以實施本案的實施例，以提供如於此所述之低洩漏電流裝置或結構。將可以了解的是，可以包含未在圖2a-c、3a-f、4a-f及5a-i未示出的其他額外初步、中間及/或後續結構與處理(例如，額外的圖案化、清 洗、研磨/平坦化處理等等)。
在此方法中之任何變化將由本案揭示所了解。考量此等變化及替換實施例可以大致包含製造一接近孔徑，以露出在半導體主體或鰭下的一氧化區域。在一些例示情況下，接近鰭部下的一區域可以藉由替換閘極製程或溝渠接觸製程或兩者加以提供。例如，在替換閘極製程中將閘極電極開口後的轉換可以當犧牲聚合物(poly)下的通道區域被曝露時被完成。在此等情況下，有機會曝露通道區至該轉換氣體(氧化、氮化或其他)，藉以將該寬能帶隙層轉換為絕緣體並使通道層材料相對地保持不變。在閘極氧化物沈積之前的來自通道區域不想要的絕緣層可以然後被清除。
例示系統
圖6例示依據本案實施例架構的以一或更多積體電路結構實施的計算系統。可以看出，計算系統1000包圍主機板1002。該主機板1002可以包含若干元件，包含但並不限於處理器1004及至少一通訊晶片1006(在此例子中示出兩個)，其各個可以實體及電耦接至主機板1002，或整合於其中。明顯了解，主機板1002可以例如為任何印刷電路板，不論是主機板或安裝在主機板上的子板或只有系統1000的板等等。取決於其應用，計算系統1000可以包含一或更多其他元件，其可以可不實體或電耦接至主機板1002。這些其他元件可以包含但並不 限於揮發記憶體(例如，DRAM)、非揮發記憶體(例如，ROM)、圖形處理器、數位信號處理器、加密處理器、晶片組、天線、顯示器、觸控螢幕顯示器、觸控螢幕控制器、電池、音訊編解碼器、視訊編解碼器、功率放大器、全球定位系統(GPS)裝置、羅盤、加速計、陀螺儀、喇叭、攝影機、及大量儲存裝置(例如，硬碟機、光碟機(CD)、數位多功能光碟(DVD)等等)。包含在計算系統1000中的任一元件可以包含一或更多電晶體結構，其將於此加以各方描述(例如，在通道層下架構有高阻層的電晶體)。在一些實施例中，多數功能可以被整合入一或更多晶片(例如，注意通訊晶片1006可以為處理器1004的一部份或整合入其中)。
通訊晶片1006完成無線通訊，用以使資料被傳送進出計算系統1000。該用語“無線”及其衍生物可以使用以描述電路、裝置、系統、方法、技術、通訊通道等等，其可以透過調變電磁輻射的使用透過非固態媒體而傳遞資料。雖然在一些實施例中，可能並沒有線路，但該用語並不暗示相關裝置並不包含任何線路。通訊晶片組1006可以實施任何數量的無線標準或協定，包含但並不限於WiFi(IEEE802.11系列)、WiMAX(IEEE802.16系列)、IEEE802.20、長期演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍芽、及其衍生物，及指定為3G、4G、5G及以後的任何其他無線協定。計算系統1000 可以包含多數通訊晶片1006。例如，第一通訊晶片1006可以被專用於較短距無線通訊，例如WiFi及藍芽及第二通訊晶片1006可以專用於長距無線通訊，例如，GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO及其他等。
計算系統1000的處理器1004包含封裝於處理器1004內的積體電路晶粒。在一些實施例中，如於此所述，該處理器1004的積體電路晶粒可以包含在III-V族通道下之高阻層。用語“處理器”可以表示任何裝置或裝置的一部份，其可以例如處理來自暫存器及/或記憶體的電子資料，以將該電子資料轉換為其他可以儲存在暫存器及/或記憶體中的電子資料。
該通訊晶片1006也可以包含被封裝於通訊晶片1006內的積體電路晶粒。依據一些此等例示實施例，通訊晶片1006的積體電路晶粒可以包含以如於此所述(例如在通道層下架構有高阻層的電晶體)之一或更多電晶體結構來實施的一或更多裝置。由本案揭示可以了解，注意多標準無線能力可以直接積集入處理器1004內(例如，其中任何晶片1006的功能被積集入處理器1004，而不是具有分開的通訊晶片)。再注意，處理器1004可以為具有此無線能力的晶片組。簡言之，任何數量的處理器1004及/或通訊晶片1006可以被使用。同樣地，任一晶片或晶片組可以具有多數功能整合於其中。
在各種實施法中，計算系統1000可以為膝上 型電腦、小筆電、筆記型電腦、智慧手機、平板電腦、個人數位助理(PDA)、超行動PC、行動手機、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒、娛樂控制單元、數位相機、攜帶式音樂播放器、或數位影音記錄器。在其他實施法中，系統1000可以為任何其他電子裝置，其如於此所述處理資料或佈署一或更多電晶體裝置。
其他例示實施例
以下例子屬於其他實施例，其係使各種替代法與架構明顯易懂。
例子1為半導體裝置，包含：IV族基板；III-V族通道層，具有能帶隙及一或更多電晶體通道區；及高阻層，包夾於該通道層與基板之間，其中該高阻層具有大於1.4電子伏(eV)的能帶隙，並大於通道層的能帶隙。
例子2包含例子1的標的，其中高阻層包含砷化銦鋁(InAlAs)、磷化銦鋁(InAlP)、磷化鋁(AlP)、銻化鋁(AlSb)、砷化鋁(AlAs)、磷化鎵銦(GaInP)、磷化鎵(GaP)、及磷化銦(InP)之一。
例子3包含例子1或2的標的，其中通道層包含銻化銦(InSb)、砷化銦鎵(InGaAs)、砷化鎵(GaAs)、及砷化銦(InAs)之一。
例子4包含例子1至3之任一的標的，其中通道層包含砷化銦鎵(InGaAs)及高阻層包含砷化銦鋁(InAlAs)。
例子5包含例子1至3之任一之標的，其中通道層包含砷化銦鎵(InGaAs)及高阻層包含磷化鎵(GaP)。
例子6包含例子1至3之任一的標的，其中通道層包含砷化鎵(GaAs)及高阻層包含磷化銦鋁(InAlP)。
例子7包含例子1至3之任一的標的，其中通道層包含砷化鎵(GaAs)及高阻層包含砷化鋁(AlAs)。
例子8包含例子1至3之任一的標的，其中該通道層包含砷化鎵(GaAs)及高阻層包含磷化鎵銦(GaInP)
例子9包含例子1至3之任一的標的，其中該通道層包含砷化銦(InAs)及高阻層包含銻化鋁(AlSb)。
例子10包含前述例子之任一的標的，其中通道層能帶隙為至少0.4eV低於高阻層的能帶隙。
例子11包含前述例子的任一的標的，其中該高阻層具有大於2.0eV的能帶隙，及該通道層具有為1.4eV或低於1.4eV的能帶隙。
例子12包含前述例子的任一的標的，其中該高阻層包含III-V族寬能帶隙材料。
例子13包含例子1或12的標的，其中該高阻層幾乎晶格匹配該通道層。
例子14包含例子1的標的，其中該高阻層包含氮。
例子15包含例子1的標的，其中該高阻層至少部份包含絕緣體材料。
例子16包含例子1的標的，其中該高阻層包含電絕緣氧化物材料。
例子17包含前述例子的任一的標的，其中各個該高阻層與該通道層低於5000埃(Å)厚。
例子18包含前述例子的任一的標的，其中該各個高阻層與該通道層低於1500埃(Å)厚。
例子19包含前述例子的任一的標的，其中該一或更多通道區為n-型通道區。
例子20包含例子19的標的，更包含用於互補金屬氧化物半導體(c-MOS)裝置的p-型通道區。
例子21包含前述例子的任一的標的，其中一或更多電晶體裝置係被形成在III-V族通道層之上及/或之中，具有鰭為主、平坦、奈米線或奈米絲架構。
例子22為包含前述例子之任一的裝置的積體電路。
例子23為包含例子1至21的任一的裝置或例子22的積體電路的行動計算系統。
例子24為半導體裝置，包含：IV族基板；III-V族通道層，具有1.4eV或更低之能帶隙及一或更多金屬氧化物半導體(MOS)電晶體裝置；及高阻層被包夾 於通道層與基板之間，其中該高阻層具有至少0.4電子伏(eV)大於通道層能帶隙的能帶隙。
例子25包含例子24的標的，其中該高阻層包含III-V族寬能帶隙材料。
例子26包含例子24的標的，其中該高阻層包含III-V族寬能帶隙材料，其被至少部份轉換為絕緣體材料。
例子27包含例子26的標的，其中該高阻層的絕緣體材料部份包含氧化物材料。
例子28為一種形成半導體裝置的方法，包含：沈積具有大於1.4電子伏(eV)的III-V族寬能帶隙層，於IV族基板的至少一部份之上及/或之中；沈積III-V族通道層於該寬能帶隙層之上；並形成一或更多電晶體裝置在該通道層的至少一部份上。
例子29包含例子28的標的，其中該III-V族層被全面沈積在該基板的至少一部份之上，以形成IV/III-V/III-V族結構。
例子30包含例子29的標的，更包含：蝕刻一或更多溝渠於該IV/III-V/III-V族結構中；及沈積淺溝渠隔離(STI)材料於該等溝渠的至少之一中。
例子31包含例子29的標的，更包含：蝕刻一或更多溝渠於該IV/III-V/III-V族結構中，並將該寬能帶隙層至少部份轉換為絕緣體。
例子32包含例子28的標的，其中在沈積該 多數III-V族層之前，該等III-V族層選擇地沈積在形成在該基板中的一或更多溝渠中。
例子33包含例子32的標的，更包含：選擇地沈積該等III-V族層於位在先前沈積在該基板中的可移除材料旁的溝渠中；移除該可移除材料，以曝露出該寬能帶隙層的至少一部份；及將該寬能帶隙層至少部份轉換為絕緣體。
例子34包含例子31或33的標的，其中該轉換係透過曝露該寬能帶隙層至氧化及/或氮化環境加以完成。
例子35包含例子34的標的，其中在將該寬能帶隙層至少部份轉換為絕緣體前，該通道層被硬遮罩。
例示實施例的前述說明已經為例示及說明目的加以呈現。這並不是想要竭盡或限制本案至所揭示的精準形式。在本案揭示下仍可能有很多修改及變化。本案的範圍係想要不為此詳細說明所限制，而是隨附的申請專利範圍所限制。主張本案優先權的未來申請案可以主張以不明方式的揭示標的，並可以大致包含如此所述之各種一或更多限制條件的任一組。

Claims (25)

  1. 一種半導體裝置，包含：IV族基板；III-V族通道層，具有能帶隙及一或更多電晶體通道區；及高阻層，包夾於該通道層與該基板之間，其中該高阻層具有大於1.4電子伏(eV)並大於該通道層的能帶隙。
  2. 如申請專利範圍第1項所述之半導體裝置，其中該高阻層包含砷化銦鋁(InAlAs)、磷化銦鋁(InAlP)、磷化鋁(AlP)、銻化鋁(AlSb)、砷化鋁(AlAs)、磷化鎵銦(GaInP)、磷化鎵(GaP)、及磷化銦(InP)之一。
  3. 如申請專利範圍第1項所述之半導體裝置，其中該通道層包含銻化銦(InSb)、砷化銦鎵(InGaAs)、砷化鎵(GaAs)、及砷化銦(InAs)之一。
  4. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層包含砷化銦鎵(InGaAs)及高阻層包含砷化銦鋁(InAlAs)。
  5. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層包含砷化銦鎵(InGaAs)及該高阻層包含磷化鎵(GaP)。
  6. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層包含砷化鎵(GaAs)及該高阻層包含磷化銦鋁(InAlP)。
  7. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層包含砷化鎵(GaAs)及該高阻層包含砷化鋁(AlAs)。
  8. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層包含砷化鎵(GaAs)及該高阻層包含磷化鎵銦(GaInP)。
  9. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層包含砷化銦(InAs)及該高阻層包含銻化鋁(AlSb)。
  10. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該通道層能帶隙至少0.4eV低於該高阻層的能帶隙。
  11. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該高阻層具有大於2.0eV的能帶隙及該通道層具有為或低於1.4eV的能帶隙。
  12. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中該高阻層包含III-V族寬能帶隙材料。
  13. 如申請專利範圍第1項所述之半導體裝置，其中該高阻層包含氮。
  14. 如申請專利範圍第1項所述之半導體裝置，其中該高阻層至少部份由絕緣體材料組成。
  15. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中各個該高阻層與該通道層低於1500埃(Å)厚。
  16. 如申請專利範圍第1至3項中任一項所述之半導體裝置，其中一或更多電晶體裝置被形成在該III-V族通道層之上及/或之中，並具有鰭式為主、平坦、奈米線或奈米絲架構。
  17. 一種行動計算系統，包含如申請專利範圍第1至3項中任一項所述之半導體裝置。
  18. 一種半導體裝置，包含：IV族基板；III-V族通道層，具有1.4eV或更低之能帶隙及一或更多金屬氧化物半導體(MOS)電晶體裝置；及高阻層，包夾於該通道層與該基板之間，其中該高阻層具有大於該通道層能帶隙至少0.4電子伏(eV)的能帶隙。
  19. 如申請專利範圍第18項所述之半導體裝置，其中該高阻層包含III-V族寬能帶隙材料，其係至少部份被轉換為絕緣體材料。
  20. 一種形成半導體裝置的方法，包含：沈積III-V族寬能帶隙層在IV族基板的至少一部份上及/或之中，該III-V族寬能帶隙層具有大於1.4電子伏(eV)的能帶隙；沈積III-V族通道層於該寬能帶隙層之上；及在該通道層的至少一部份上，形成一或更多電晶體裝置。
  21. 如申請專利範圍第20項所述之方法，其中該等 III-V族層係被全面沈積在該基板的至少一部份之上，以形成IV/III-V/III-V族結構。
  22. 如申請專利範圍第21項所述之方法，更包含：在該IV/III-V/III-V族結構中，蝕刻一或更多溝渠；及沈積淺溝渠隔離(STI)材料於該等溝渠的至少一溝渠中。
  23. 如申請專利範圍第21項所述之方法，更包含：在該IV/III-V/III-V族結構中，蝕刻一或更多溝渠；及將該寬能帶隙層至少部份轉換為絕緣體。
  24. 如申請專利範圍第20項所述之方法，其中在沈積該等III-V族層之前，該等III-V族層係被選擇地沈積形成在該基板的一或更多溝渠中，該方法更包含：選擇地沈積該等III-V族層於位在先前沈積在該基板中的可移除材料旁的溝渠中；移除該可移除材料，以曝露出該寬能帶隙層的至少一部份；及將該寬能帶隙層至少部份轉換為絕緣體；其中該轉換係經由將該寬能帶隙層曝露至氧化及/或氮化環境中加以完成。
  25. 如申請專利範圍第24項所述之方法，其中在將該寬能帶隙層至少部份轉換為絕緣體之前，該通道層係被硬遮罩。
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