TW201444097A - 半導體元件 - Google Patents
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- TW201444097A TW201444097A TW102116368A TW102116368A TW201444097A TW 201444097 A TW201444097 A TW 201444097A TW 102116368 A TW102116368 A TW 102116368A TW 102116368 A TW102116368 A TW 102116368A TW 201444097 A TW201444097 A TW 201444097A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 120
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 115
- 239000011241 protective layer Substances 0.000 claims description 48
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 3
- 229910003266 NiCo Inorganic materials 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- YTBWYQYUOZHUKJ-UHFFFAOYSA-N oxocobalt;oxonickel Chemical compound [Co]=O.[Ni]=O YTBWYQYUOZHUKJ-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 31
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 26
- 229910021529 ammonia Inorganic materials 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 13
- 238000012360 testing method Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Crystallography & Structural Chemistry (AREA)
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Abstract
一種半導體元件，包括基板、閘極、絕緣層、源極、汲極、半導體通道層、第一保護層以及第二保護層。閘極配置於基板上。絕緣層覆蓋閘極。源極以及汲極位於絕緣層上。半導體通道層配置於絕緣層上，且半導體通道層橋接源極和汲極。第一保護層覆蓋半導體通道層、源極以及汲極。第一保護層包含氧化矽。第二保護層配置於第一保護層上。第二保護層包含氮化矽，且第二保護層的氫濃度為約2.0×1022 atom/cm3至約3.11×1022 atom/cm3。
Description
本發明是有關於一種半導體元件。
金屬氧化物半導體(Metal Oxide Semiconductor)具有較高的載子遷移率(Mobility)，因此備受重視。相較於非晶矽薄膜電晶體，金屬氧化物半導體電晶體具有更好的電性表現。另外，相較於低溫多晶矽薄膜電晶體，金屬氧化物半導體電晶體的製造方法更為簡單，所以近年來許多研究集中在金屬氧化物半導體電晶體。不過，金屬氧化物半導體的材料是非常敏感的，這導致金屬氧化物半導體的穩定性及可靠度(reliability)至今仍無法獲得令人滿意的結果。有鑑於此，目前亟需一種改良的半導體元件，期能有效改善金屬氧化物半導體的穩定性及可靠度。
本發明係提供一種半導體元件，俾能具有極佳的可靠度(reliability)。此半導體元件包括基板、閘極、絕緣層、源極、汲極、半導體通道層、第一保護層以及第二保護層。
閘極配置於基板上，絕緣層覆蓋閘極。源極以及汲極位於絕緣層上。半導體通道層配置於絕緣層上，且半導體通道層橋接源極和汲極。第一保護層覆蓋半導體通道層、源極以及汲極，且第一保護層包含氧化矽。第二保護層配置於第一保護層上，其中第二保護層包含氮化矽，且第二保護層的氫濃度為約2.0×1022 atom/cm3至約3.11×1022 atom/cm3。
在一實施方式中，第二保護層的厚度為約300埃(angstrom)至約700埃。
在一實施方式中，第一保護層的厚度為約1000埃至約3000埃。
在一實施方式中，半導體元件更包括一通道保護層，其中通道保護層配置於半導體通道層與第一保護層之間，且通道保護層於一垂直投影方向上與半導體通道層重疊。
在一實施方式中，通道保護層之材料包含氧化矽。
在一實施方式中，半導體通道層配置於源極以及汲極上，且半導體通道層之一側覆蓋部分之源極，半導體通道層之另一側覆蓋部分之汲極。
在一實施方式中，半導體通道層設置於絕緣層以及源極、汲極之間，且部分之源極覆蓋半導體通道層之一側，部分之汲極覆蓋半導體通道層之另一側。
在一實施方式中，半導體通道層於一垂直投影方向上與閘極重疊。
在一實施方式中，半導體通道層包含至少一金屬氧化物之材料，係選自氧化銦鎵鋅(IGZO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化錫(ZnO)、氧化鎘‧氧化鍺(2CdO‧GeO2)、氧化鎳鈷(NiCo2O4)以及上述之組合所組成的群組。
在一實施方式中，半導體元件更包括一平坦層以及一畫素電極。平坦層覆蓋第二保護層。第一保護層、第二保護層以及平坦層分別具有第一開口、第二開口以及第三開口，且第一開口、第二開口以及第三開口相互以暴露出汲極。畫素電極位在部分之平坦層上，且畫素電極透過第一開口、第二開口及第三開口接觸並電性連接於汲極。
10‧‧‧半導體元件
10a‧‧‧半導體元件
100‧‧‧基板
110‧‧‧閘極
120‧‧‧絕緣層
131‧‧‧源極
132‧‧‧汲極
140‧‧‧半導體通道層
141‧‧‧通道保護層
150‧‧‧第一保護層
151‧‧‧第一開口
160‧‧‧第二保護層
161‧‧‧第二開口
170‧‧‧平坦層
171‧‧‧第三開口
180‧‧‧畫素電極
第1圖繪示本發明實施方式之半導體元件的剖面示意圖。
第2圖繪示本發明另一實施方式之半導體元件的剖面示意圖。
第3圖繪示本發明實施方式之第二保護層的氫濃度(CH)與氨/矽烷流量比(GR)的關係圖。
第4圖繪示本發明實施方式之半導體元件的起始臨界電壓(Vth)與氨/矽烷流量比(GR)關係圖。
第5圖繪示本發明實施方式之半導體元件在經過300小時高溫高濕測試之後，半導體元件的臨界電壓(Vth)與氨/矽烷流量比(GR)關係圖。
為了使本揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例，在有益的情形下可相互組合或取代，也可在一實施例中附加其他的實施例，而無須進一步的記載或說明。
在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而，可在無此等特定細節之情況下實踐本發明之實施例。在其他情況下，為簡化圖式，熟知的結構與裝置僅示意性地繪示於圖中。
第1圖繪示本發明實施方式之半導體元件10的剖面示意圖。半導體元件10包含閘極110、絕緣層120、源極131、汲極132、半導體通道層140、第一保護層150以及第二保護層160。半導體元件10可形成在任何適當的基板100上，例如玻璃基板、聚乙烯對苯二甲酸酯(PET)基板、聚萘二甲酸乙二酯(PEN)基板、聚醯亞氨或聚碳酸酯基板或不銹鋼基板。
閘極110配置於基板100上，可使用例如濺鍍、脈衝雷射蒸汽沈積法、電子束蒸發、化學氣相沈積等方法形成閘極110。閘極110可以是單層結構或多層結構。閘極110的材料可為具有導電性的金屬材料，例如鉑、金、鎳、鋁、鉬、銅、釹、上述材料的合金或上述材料的組合。此
外，可利用微影蝕刻製程以形成圖案化之閘極110。
絕緣層120覆蓋閘極110，用以避免閘極110和源極131、汲極132與半導體通道層140直接接觸。絕緣層120可使用濺鍍、脈衝雷射蒸汽沈積法、電子束蒸發、化學氣相沈積等方法。絕緣層120的材料可為諸如氧化矽(SiOx)或氮化矽(SiNy)等無機材料或是具有介電特性之高分子有機材料。
源極131和汲極132分別設置於閘極110上方的絕緣層120上。一般而言，源極131和汲極132可包含例如鉑、金、鎳、鋁、鉬、銅、釹等金屬材料。可以使用例如濺鍍、脈衝雷射蒸汽沈積法、電子束蒸發、化學氣相沈積等製程以形成源極131和汲極132。此外，能夠利用一般的微影蝕刻製程以形成圖案化之源極131和汲極132。
半導體通道層140配置在絕緣層120上，並且半導體通道層140橋接源極131和汲極132。在本實施方式中，如第1圖所示，半導體通道層140的一側邊覆蓋源極131的一部分，而且半導體通道層140的另外一個側邊覆蓋汲極132的一部分。換言之，半導體通道層140的一部分是配置在源極131以及汲極132上，半導體通道層140的另一部分則是配置在源極131與汲極132之間的絕緣層120上。根據本發明之數個實施例，半導體通道層140可包含至少一種金屬氧化物材料，此金屬氧化物材料可例如為氧化銦鎵鋅(IGZO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化錫(ZnO)、氧化鎘‧氧化鍺(2CdO‧GeO2)、氧化鎳鈷(NiCo2O4)
或上述之組合。
第一保護層150包含氧化矽，而且第一保護層150覆蓋半導體通道層140、源極131、汲極132以及絕緣層120。第一保護層150的厚度可例如為約1000埃(Angstrom)至約3000埃。第二保護層160配置於第一保護層150上，而且第二保護層160包含氮化矽。第二保護層160的厚度為約300埃(angstrom)至約700埃。第二保護層160的氫濃度為約2.0×1022 atom/cm3至約3.11×1022 atom/cm3。一般而言，氮化矽層含有微量的氫元素，這些氫元素是在形成氮化矽層的過程中一併被夾雜在氮化矽層中。舉例而言，當利用化學氣相沈積技術來形成氮化矽時，通常使用矽烷(SiH4)、氨(NH3)以及氮氣(N2)來形成氮化矽，矽烷用以提供氮化矽層中矽原子的來源，氨以及氮氣用以提供氮化矽層中氮原子的來源。由於氨分子及矽烷都包含氫原子，因此在化學氣相沈積的過程中，少量的氫原子會一併被夾雜在氮化矽層中，而讓氮化矽層包含有微量的氫元素。在本實施例中，第二保護層160的氫濃度為約2.0×1022 atom/cm3至約3.11×1022 atom/cm3，而且上述氫濃度範圍具有關鍵性。當第二保護層160中氮化矽的氫濃度介於前述範圍之間時，能夠有效改善半導體元件10的可靠度，並且具有較佳的元件特性。更具體地說，當第二保護層160中氮化矽的氫濃度介於前述範圍之間時，半導體元件10在經過300小時高溫且高濕條件下之可靠度試驗中，半導體元件10的臨界電壓(threshold voltage)相較於半導體元件10初始的臨
界電壓並無顯著的影響。
在本實施例中，第一保護層150以及第二保護層160分別具有一第一開口151以及一第二開口161。第二開口161位在第一開口151上方，並且第二開口161連通第一開口151。第一開口151和第二開口161位在汲極132上方，因此汲極132可經由第一開口151和第二開口161而被暴露出來。
在另一實施例中，半導體元件10更包括一通道保護層141。通道保護層141配置於半導體通道層140與第一保護層150之間。通道保護層141在絕緣層120上的垂直投影與半導體通道層140在絕緣層120上的垂直投影重疊。換言之，通道保護層141在一垂直投影方向上與半導體通道層140重疊。在一具體實例中，通道保護層141可配置在半導體通道層140上，並且通道保護層141與半導體通道層140具有相同的輪廓。通道保護層141與半導體通道層140能夠在同一道微影蝕刻製程中形成，而具有大致相同的圖案或輪廓。通道保護層141的材料可例如為氧化矽。
在另一實施例中，半導體元件10更包括一平坦層170以及一畫素電極180。平坦層170覆蓋第二保護層160，而且平坦層170具有一第三開口171。第三開口171連通於第二開口161及第一開口151。具體而言，第二開口161位於第一開口151上方，第三開口171位於第二開口161上方。可以藉由同一道微影蝕刻來形成第一開口151、第二
開口161及第三開口171。畫素電極180位在平坦層170的一部分上。畫素電極180能夠透過第一開口151、第二開口161及第三開口接觸並電性連接於汲極132。
第2圖繪示本發明另一實施方式之半導體元件10a的剖面示意圖。半導體元件10a與第1圖之半導體元件10中元件符號相同代表相同元件於此不再贅述。在本實施例中，半導體元件10a的源極131、汲極132和半導體通道層140的配置方式與第1圖之半導體元件10不同。如第2圖所示的半導體元件10a中，源極131的一部分覆蓋在半導體通道層140的一側上，汲極132的一部分覆蓋在半導體通道層140之另一側上。換言之，半導體通道層140設置於絕緣層120、源極131和汲極132之間，且半導體通道層140在一垂直投影方向上與閘極110部份重疊。在一變化實施例中，半導體元件10a亦可不設置通道保護層141於半導體通道層140上(圖未示)，但不限於此。
第3圖繪示本發明實施方式之第二保護層的氫濃度(CH)與氨/矽烷流量比(GR)的關係圖。第3圖的橫座標為氨(NH3)/矽烷(SiH4)流量比(GR)，縱座標為為氫濃度(CH)(1022atoms/cm3)。由第3圖可知，當氨/矽烷流量比(GR)愈大，氮化矽層的氫濃度含量愈高。
第4圖繪示本發明實施方式之半導體元件的起始臨界電壓(Vth)與氨/矽烷流量比(GR)關係圖。第4圖所示的實驗數值是半導體元件在進行高溫高濕測試之前的結果。由第4圖可知，當氨/矽烷流量比(GR)介於1~2之間時，半
導體元件的臨界電壓介於約-1 V至約-5 V之間，較適合應用在實際的電子裝置中。但是，當氨/矽烷流量比(GR)大於或等於2.5時，半導體元件的臨界電壓低於約-15 V，臨界電壓低於約-15 V的半導體元件較不容易被實際應用在電子裝置中。
第5圖繪示本發明實施方式之半導體元件在經過300小時高溫高濕測試之後，半導體元件的臨界電壓(Vth)與氨/矽烷流量比(GR)關係圖。由第5圖可知，當氨/矽烷流量比(GR)大於或等於約2.5時，雖然半導體元件的臨界電壓不會因為高溫高濕測試而有所影響，但是半導體元件臨界電壓太低較不易實際應用於電子裝置中。在本實施例中，當氨/矽烷流量比(GR)介於約1至約2之間，半導體元在經過300小時的高溫高濕測試之後，依然維持在初始的臨界電壓值。經進一步研究後發現，當氮化矽層的氫濃度介於約2.0×1022 atom/cm3至約3.11×1022 atom/cm3之間，半導體元件同時兼具較佳的臨界電壓以及元件的可靠性。換言之，如果氮化矽的氫濃度低於2.0×1022 atom/cm3，半導體元件的特性不穩定，無法通過可靠度測試。如果氮化矽的氫濃度高於3.11×1022 atom/cm3，半導體元件雖然能夠通過可靠度測試，但是半導體元件的初始臨界電壓太低，較不易被實際應用於電子裝置中。當氮化矽層的氫濃度介於約2.0×1022 atom/cm3至約3.11×1022 atom/cm3之間，半導體元件同時兼具可應用的臨界電壓值以及元件的可靠性。
雖然本發明已以實施方式揭露如上，然其並非用以
限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧半導體元件
100‧‧‧基板
110‧‧‧閘極
120‧‧‧絕緣層
131‧‧‧源極
132‧‧‧汲極
140‧‧‧半導體通道層
141‧‧‧通道保護層
150‧‧‧第一保護層
151‧‧‧第一開口
160‧‧‧第二保護層
161‧‧‧第二開口
170‧‧‧平坦層
171‧‧‧第三開口
180‧‧‧畫素電極
Claims (10)
- 一種半導體元件，包括：一基板；一閘極，配置於該基板上；一絕緣層覆蓋該閘極；一源極以及一汲極，位於該絕緣層上；一半導體通道層，配置於該絕緣層上，且該半導體通道層橋接該源極和該汲極；一第一保護層，覆蓋該半導體通道層、該源極以及該汲極，且該第一保護層包含氧化矽；以及一第二保護層，配置於該第一保護層上，其中該第二保護層包含氮化矽，且該第二保護層的氫濃度為約2.0×1022 atom/cm3至約3.11×1022 atom/cm3。
- 如請求項1所述之半導體元件，其中該第二保護層的一厚度為約300埃(angstrom)至約700埃。
- 如請求項1所述之半導體元件，其中該第一保護層的一厚度為約1000埃至約3000埃。
- 如請求項1所述之半導體元件，更包括一通道保護層，其中該通道保護層配置於該半導體通道層與該第一保護層之間，且該通道保護層於一垂直投影方向上與該半導體通道層重疊。
- 如請求項4所述之半導體元件，其中該通道保護層 之材料包含氧化矽。
- 如請求項1所述之半導體元件，其中該半導體通道層配置於該源極以及該汲極上，且該半導體通道層之一側覆蓋部分之該源極，該半導體通道層之另一側覆蓋部分之該汲極。
- 如請求項1所述之半導體元件，其中該半導體通道層設置於該絕緣層以及該源極、該汲極之間，且部分之該源極覆蓋該半導體通道層之一側，部分之該汲極覆蓋該半導體通道層之另一側。
- 如請求項1所述之半導體元件，其中該半導體通道層於一垂直投影方向上與該閘極重疊。
- 如請求項1所述之半導體元件，其中該半導體通道層包含至少一金屬氧化物之材料，係選自氧化銦鎵鋅(IGZO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化錫(ZnO)、氧化鎘‧氧化鍺(2CdO‧GeO2)、氧化鎳鈷(NiCo2O4)以及上述之組合所組成的群組。
- 如請求項1所述之半導體元件，更包括：一平坦層，覆蓋該第二保護層，其中該第一保護層、該第二保護層以及該平坦層分別具有一第一開口、一第二開口以及一第三開口，且該第一開口、該第二開口及該第三開口相互連通以暴露出該汲極；以及 一畫素電極，位在部分之該平坦層上，且該畫素電極透過該第一開口、該第二開口及該第三開口接觸並電性連接於該汲極。
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