TW201443108A - 用於矽晶圓之污染物去疵的氧化物介質 - Google Patents

用於矽晶圓之污染物去疵的氧化物介質 Download PDF

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Publication number
TW201443108A
TW201443108A TW102148894A TW102148894A TW201443108A TW 201443108 A TW201443108 A TW 201443108A TW 102148894 A TW102148894 A TW 102148894A TW 102148894 A TW102148894 A TW 102148894A TW 201443108 A TW201443108 A TW 201443108A
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TW
Taiwan
Prior art keywords
acid
medium
oxide
wafer
group
Prior art date
Application number
TW102148894A
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English (en)
Chinese (zh)
Inventor
印格 寇勒
奧利佛 多爾
賽巴絲汀 巴斯
Original Assignee
馬克專利公司
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Filing date
Publication date
Application filed by 馬克專利公司 filed Critical 馬克專利公司
Publication of TW201443108A publication Critical patent/TW201443108A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H10P14/6342—
    • H10P14/6686—
    • H10P14/68—
    • H10P32/141—
    • H10P32/171—
    • H10P32/19—
    • H10P36/03—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW102148894A 2012-12-28 2013-12-27 用於矽晶圓之污染物去疵的氧化物介質 TW201443108A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12008660 2012-12-28
EP13005736 2013-12-10

Publications (1)

Publication Number Publication Date
TW201443108A true TW201443108A (zh) 2014-11-16

Family

ID=49956119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102148894A TW201443108A (zh) 2012-12-28 2013-12-27 用於矽晶圓之污染物去疵的氧化物介質

Country Status (8)

Country Link
US (1) US20150357508A1 (enExample)
EP (1) EP2938762A1 (enExample)
JP (1) JP2016506629A (enExample)
KR (1) KR20150103129A (enExample)
CN (1) CN104884684A (enExample)
SG (2) SG10201705329RA (enExample)
TW (1) TW201443108A (enExample)
WO (1) WO2014101988A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3241242A1 (de) * 2014-12-30 2017-11-08 Merck Patent GmbH Laserdotierung von halbleiter
WO2016150548A2 (de) * 2015-03-23 2016-09-29 Merck Patent Gmbh Druckbare pastöse diffusions- und legierungsbarriere zur herstellung von hocheffizienten kristallinen siliziumsolarzellen
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837873A (en) * 1972-05-31 1974-09-24 Texas Instruments Inc Compositions for use in forming a doped oxide film
JPS5534258A (en) * 1978-09-01 1980-03-10 Tokyo Denshi Kagaku Kabushiki Coating solution for forming silica film
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
DE10045249A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
US7393469B2 (en) * 2003-07-31 2008-07-01 Ramazan Benrashid High performance sol-gel spin-on glass materials
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
US7951696B2 (en) * 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
JP2011211036A (ja) * 2010-03-30 2011-10-20 Shin-Etsu Chemical Co Ltd 基板処理方法、基板の製造方法及び太陽電池の製造方法
WO2012119686A2 (de) * 2011-03-08 2012-09-13 Merck Patent Gmbh Aluminiumoxidpasten und verfahren zu deren verwendung
EP2938761A1 (de) * 2012-12-28 2015-11-04 Merck Patent GmbH Dotiermedien zur lokalen dotierung von siliziumwafern

Also Published As

Publication number Publication date
SG10201705329RA (en) 2017-07-28
US20150357508A1 (en) 2015-12-10
WO2014101988A1 (de) 2014-07-03
CN104884684A (zh) 2015-09-02
JP2016506629A (ja) 2016-03-03
SG11201505028XA (en) 2015-07-30
KR20150103129A (ko) 2015-09-09
EP2938762A1 (de) 2015-11-04

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