TW201440915A - Rolled copper foil having a copper-electroplated layer - Google Patents

Rolled copper foil having a copper-electroplated layer Download PDF

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Publication number
TW201440915A
TW201440915A TW103113689A TW103113689A TW201440915A TW 201440915 A TW201440915 A TW 201440915A TW 103113689 A TW103113689 A TW 103113689A TW 103113689 A TW103113689 A TW 103113689A TW 201440915 A TW201440915 A TW 201440915A
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copper foil
copper
plating layer
rolled
rolled copper
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TW103113689A
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Chinese (zh)
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TWI633196B (en
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Takemi Muroga
Chizuru Goto
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Sh Copper Products Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/40Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling foils which present special problems, e.g. because of thinness
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Metal Rolling (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

This invention is a rolled copper foil having a copper-electroplated layer which has excellent folding endurance after re-crystallization annealing process. The rolled copper foil having a copper-electroplated layer has a rolled copper foil formed by a final cold rolling step and followed by a re-crystallization annealing process, and one copper-electroplated layer on at least one side of the rolled copper foil. For a plurality of crystal surfaces of the rolled copper foil having a copper-electroplated layer, when the intensity fraction of a diffraction peak obtained by X-ray diffraction according to 2<theta>/<theta> is performed to surface {111}, surface {002}, and surface {022}, and when PR{111}, PR{002}, PR{022}, PM{111}, PM{002}, PM{022} are individually set, the rolled copper foil having a copper-electroplated layer will become one of the following states: it satisfies PM{111} ≥ 15.0, further satisfies PM{111} > (PR{111}+5), PM{002} < (PR{002}-10) or PM{002} > (PR{002}+10), or PM{022} < (PR{022}-10) or PM{022} > (PR{022}+10).

Description

附有銅鍍層的壓延銅箔 Calendered copper foil with copper plating

本發明有關附有銅鍍層的壓延銅箔,特別是有關用於柔性印刷電路板之附有銅鍍層的壓延銅箔 The invention relates to a rolled copper foil with a copper plating layer, in particular to a rolled copper foil with a copper plating layer for a flexible printed circuit board

柔性印刷電路板(FPC:Flexible Printed Circuit)薄而且撓性優異,因而在電子設備等的實際安裝狀態下的自由度高。因此,FPC除了用於折疊式便攜電話的彎曲部、數位相機、印表機頭等的移動部分以外,還廣泛用於硬碟驅動器(HDD:Hard Disk Drive)、數位多用途光碟(DVD:Digital Versatile Disk)、光碟(CD:Compact Disk)等磁片相關設備的移動部分的佈線等。因此,對於FPC、用作其佈線材料的壓延銅箔,要求高彎曲特性,即耐反復彎曲的優異的耐彎曲性。 The flexible printed circuit board (FPC: Flexible Printed Circuit) is thin and excellent in flexibility, and thus has high degree of freedom in an actual mounted state of an electronic device or the like. Therefore, the FPC is widely used for hard disk drives (HDD: Hard Disk Drive) and digital multi-purpose optical discs (DVD: Digital) in addition to the moving parts of the folding portion of the foldable mobile phone, the digital camera, and the printer head. Wiring of the moving parts of the disk-related equipment such as Versatile Disk) and CD (Compact Disk). Therefore, for the FPC and the rolled copper foil used as the wiring material, high bending property, that is, excellent bending resistance against repeated bending is required.

FPC用壓延銅箔經由例如熱軋、冷軋等步驟來製造。在其後的FPC的製造步驟中,利用加熱等,壓延銅箔通過黏接劑或直接與聚醯亞胺等樹脂形成的FPC基膜(基材)貼合。對基材上的壓延銅箔實施蝕刻等表面加工而製成佈線。與軋製並固化的冷軋後的硬質的狀態相比,通過再結晶軟化的退火後的狀態的壓延銅箔的耐彎曲性顯著提高。因此,例如上述FPC的製造步驟中,使用冷軋後的固化的壓延銅箔,避免伸長、褶皺等變形的同時截斷壓延銅箔,在基材上重疊。之後,藉由還兼作為使壓延銅箔與基材密合而複合的步驟並進行加熱,從而進行壓延銅箔的再結晶退火,實現耐彎曲性的提高。 The FPC is produced by rolling a rolled copper foil through steps such as hot rolling and cold rolling. In the subsequent manufacturing step of the FPC, the rolled copper foil is bonded by an adhesive or an FPC base film (substrate) directly formed of a resin such as polyimide or the like by heating or the like. The rolled copper foil on the substrate is subjected to surface processing such as etching to form a wiring. The bending resistance of the rolled copper foil in the state after annealing by recrystallization softening is remarkably improved as compared with the hard state after cold rolling in which rolling and solidification are performed. Therefore, for example, in the production step of the FPC described above, the cured rolled copper foil after cold rolling is used, and the rolled copper foil is cut off while being deformed such as elongation or wrinkles, and is superposed on the substrate. Then, by performing a step of laminating the rolled copper foil and the substrate, and heating, the recrystallization annealing of the rolled copper foil is performed to improve the bending resistance.

以上述FPC的製造步驟為前提,迄今為止,已經對耐彎曲性優異的壓延銅箔、其製造方法進行了各種研究。根據其結果,發表許多壓延銅箔的表面為立方體配向的{002}面({200}面)越發達則耐彎曲性越高的報導。 On the premise of the above-described manufacturing steps of the FPC, various studies have been made on a rolled copper foil excellent in bending resistance and a method for producing the same. According to the results, it has been reported that the more the {002} plane ({200} plane) in which the surface of the rolled copper foil is cubically aligned, the higher the bending resistance.

例如專利文獻1中,在再結晶粒的平均粒徑成為5μm~20μm的條件下進行最終冷軋之前的退火。此外,將最終冷軋中的軋製加工度設為90%以 上。通過這樣,獲得下述立方體集合組織:在進行調質以成為再結晶組織的狀態下,在將軋製面的通過X射線繞射求得的{200}面的強度設為I、將微粉末銅的通過X射線繞射求得的{200}面的強度設為I0時,I/I0>20。 For example, in Patent Document 1, annealing before final cold rolling is performed under the condition that the average particle diameter of the recrystallized grains is 5 μm to 20 μm. Further, the degree of rolling work in the final cold rolling is set to 90% or more. In this way, the following cubic assembly structure is obtained: in the state in which the tempering is performed to form a recrystallized structure, the intensity of the {200} plane obtained by X-ray diffraction on the rolled surface is set to I, and the fine powder is obtained. When the intensity of the {200} plane obtained by X-ray diffraction of copper is I 0 , I/I 0 >20.

此外,例如專利文獻2中,提高最終冷軋前的立方體集合組織的發達度,將最終冷軋中的加工度設為93%以上。通過進一步實施再結晶退火,獲得{200}面的積分強度為I/I0≧40之立方體集合組織顯著發達的壓延銅箔。 Further, for example, in Patent Document 2, the degree of development of the cubic aggregate structure before the final cold rolling is increased, and the degree of processing in the final cold rolling is set to 93% or more. By further performing recrystallization annealing, a rolled copper foil in which the integrated intensity of the {200} plane is I/I 0 ≧40 and the cubic aggregate structure is remarkably developed is obtained.

此外,例如專利文獻3中,將最終冷軋步驟中的總加工度設為94%以上,且將每次軋製的加工度控制在15%~50%。通過這樣,再結晶退火後,獲得規定的晶粒配向狀態。即,利用X射線繞射極點圖測定而得到的軋製面的{111}面相對於{200}面的面內配向度△β為10°以下。此外,軋製面中作為立方體集合組織的{200}面的標準化的繞射峰強度[a]與{200}面之處於雙晶關係的結晶區域的標準化的繞射峰強度[b]之比為[a]/[b]≧3。 Further, for example, in Patent Document 3, the total degree of work in the final cold rolling step is set to 94% or more, and the degree of processing per rolling is controlled to be 15% to 50%. Thus, after recrystallization annealing, a predetermined crystal grain alignment state is obtained. In other words, the in-plane Δβ of the {111} plane of the rolled surface obtained by the X-ray diffraction pole pattern measurement with respect to the {200} plane is 10° or less. In addition, the ratio of the normalized diffraction peak intensity [b] of the normalized diffraction peak intensity [a] of the {200} plane as the cubic aggregate structure in the rolled surface to the {200} plane in the twin crystal relationship Is [a]/[b]≧3.

這樣,習知技術中,通過提高最終冷軋步驟的總加工度,在再結晶退火步驟後使壓延銅箔的立方體集合組織發達,從而實現耐彎曲性的提高。 Thus, in the prior art, by increasing the total degree of processing of the final cold rolling step, the cubic aggregate structure of the rolled copper foil is developed after the recrystallization annealing step, thereby improving the bending resistance.

此外,在FPC用途的壓延銅箔中,為了提高與基材的貼合強度,例如有時使其附著粗化粒。另外在這種情況下,例如大多如專利文獻4、5那樣,為了使粗化粒均勻地附著,預先在壓延銅箔的一面或兩面形成銅鍍層從而實現表面的平滑化,然後再附著粗化粒。 Further, in the rolled copper foil for FPC use, in order to improve the bonding strength with the substrate, for example, coarse particles may be attached thereto. Further, in this case, for example, as in Patent Documents 4 and 5, in order to uniformly adhere the roughened particles, a copper plating layer is formed on one surface or both surfaces of the rolled copper foil to smooth the surface, and then the adhesion is roughened. grain.

習知技術文獻 Conventional technical literature

專利文獻 Patent literature

專利文獻1:日本特許第3009383號公報 Patent Document 1: Japanese Patent No. 3009383

專利文獻2:日本特許第3856616號公報 Patent Document 2: Japanese Patent No. 3856616

專利文獻3:日本特許第4285526號公報 Patent Document 3: Japanese Patent No. 4285526

專利文獻4:日本特開2005-340635號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2005-340635

專利文獻5:日本特開2010-037585號公報 Patent Document 5: Japanese Laid-Open Patent Publication No. 2010-037585

然而,形成有銅鍍層之附有銅鍍層的壓延銅箔中,例如即使是使用上 述專利文獻1~3之技術提高了耐彎曲性的壓延銅箔,由於反復彎曲,也多會發生可見的疲勞斷裂。即,附有銅鍍層的壓延銅箔中大多可見到耐彎曲性的惡化。 However, in a rolled copper foil with a copper plating layer formed with a copper plating layer, for example, even if it is used The technique of Patent Documents 1 to 3 improves the bending resistance of the rolled copper foil, and visible fatigue fracture often occurs due to repeated bending. That is, in the rolled copper foil with a copper plating layer, the deterioration of the bending resistance is often seen.

本發明的目的在於,提供一種即使形成了銅鍍層,在再結晶退火步驟後也可以具有優異的耐彎曲性的附有銅鍍層的壓延銅箔。 An object of the present invention is to provide a rolled copper foil with a copper plating layer which can have excellent bending resistance even after a recrystallization annealing step even if a copper plating layer is formed.

根據本發明的第1方式,提供一種附有銅鍍層的壓延銅箔,具備:主表面或背面具有平行的多個結晶面的最終冷軋步驟後、再結晶退火步驟前的壓延銅箔;以及形成於前述壓延銅箔的主表面或其背面中的至少一側的面上、且在主表面或在成為所述壓延銅箔的介面的背面具有平行的多個結晶面的銅鍍層,在前述壓延銅箔的前述多個結晶面中,將{111}面、{002}面、{022}面按照2θ/θ法進行的X射線繞射所獲得的繞射峰的強度值各自設為IR{111}、IR{002}、IR{022}、將各前述繞射峰的強度值的分率PR{111}、PR{002}、PR{022}設為:PR{111}=[IR{111}/(IR{111}+IR{002}+IR{022})]×100、PR{002}=[IR{002}/(IR{111}+IR{002}+IR{022})]×100、PR{022}=[IR{022}/(IR{111}+IR{002}+IR{022})]×100,在前述銅鍍層的前述多個結晶面中,將由對{111}面、{002}面、{022}面按照2θ/θ法進行的X射線繞射所獲得的繞射峰的強度值各自設為IM{111}、IM{002}、IM{022}、將各前述繞射峰的強度值的分率PM{111}、PM{002}、PM{022}設為:PM{111}=[IM{111}/(IM{111}+IM{002}+IM{022})]×100、PM{002}=[IM{002}/(IM{111}+IM{002}+IM{022})]×100、PM{022}=[IM{022}/(IM{111}+IM{002}+IM{022})]×100時,成為下述狀態中的至少任一狀態:滿足以下的式(1)PM{111}≧15.0…(1),進一步滿足以下的式(2) PM{111}>(PR{111}+5)…(2)的狀態;滿足以下的式(3)、(4)PM{002}<(PR{002}-10)…(3) According to a first aspect of the present invention, there is provided a rolled copper foil with a copper plating layer, comprising: a rolled copper foil after a final cold rolling step having a plurality of parallel crystal faces on a main surface or a back surface, and a recrystallization annealing step; and a copper plating layer formed on at least one of the main surface of the rolled copper foil or the back surface thereof and having a plurality of parallel crystal faces on the main surface or the back surface of the interface of the rolled copper foil. Among the plurality of crystal faces of the rolled copper foil, the intensity values of the diffraction peaks obtained by X-ray diffraction of the {111} plane, the {002} plane, and the {022} plane by the 2θ/θ method are each set to I. R {111}, I R {002}, I R {022}, the fractions of the intensity values of the aforementioned diffraction peaks P R {111}, P R {002}, P R {022} are set to: P R {111}=[I R {111}/(I R {111}+I R {002}+I R {022})]×100, P R {002}=[I R {002}/(I R {111}+I R {002}+I R {022})]×100, P R {022}=[I R {022}/(I R {111}+I R {002}+I R { 022})]×100, in the above-mentioned plurality of crystal faces of the copper plating layer, X-ray diffraction obtained by the 2θ/θ method for the {111} plane, the {002} plane, and the {022} plane is obtained. Diffraction peak intensity values are each set to I M {111}, I M {002}, I M {022}, the intensity values of each fraction of the diffraction peak P M {111}, P M {002} , P M {022} is set to: P M {111}=[I M {111}/(I M {111}+I M {002}+I M {022})]×100, P M {002} =[I M {002}/(I M {111}+I M {002}+I M {022})]×100, P M {022}=[I M {022}/(I M {111} When +I M {002}+I M {022})] × 100, at least one of the following states is satisfied: P M {111} ≧ 15.0 (1) satisfying the following formula (1), further satisfied The following equation (2) P M {111}>(P R {111}+5) (2); satisfies the following equations (3), (4) P M {002}<(P R {002 }-10)...(3)

PM{002}>(PR{002}+10)…(4)中的任一個的狀態;滿足以下的式(5)、(6)PM{022}<(PR{022}-10)…(5) The state of any one of P M {002}>(P R {002}+10) (4); satisfying the following equations (5), (6) P M {022}<(P R {022}- 10)...(5)

PM{022}>(PR{022}+10)…(6)中的任一個的狀態。 The state of any of P M {022}>(P R {022}+10) (6).

根據本發明的第2方式,提供第1方式所述之附有銅鍍層的壓延銅箔,其滿足以下的式(2)、(4)、(6)中的至少任一個:PM{111}>(PR{111}+5)…(2) According to a second aspect of the present invention, there is provided a rolled copper foil with a copper plating layer according to the first aspect, which satisfies at least one of the following formulas (2), (4), and (6): P M {111 }>(P R {111}+5)...(2)

PM{002}>(PR{002}+10)…(4) P M {002}>(P R {002}+10)...(4)

PM{022}>(PR{022}+10)…(6)。 P M {022}>(P R {022}+10)...(6).

根據本發明的第3方式,提供第1或第2方式所述之附有銅鍍層的壓延銅箔,前述壓延銅箔由下述物質形成:由韌銅或無氧銅形成的純銅、或者以韌銅或無氧銅為母相的低濃度銅合金,前述壓延銅箔採取純銅型集合組織的形態。 According to a third aspect of the present invention, there is provided a rolled copper foil with a copper plating layer according to the first or second aspect, wherein the rolled copper foil is formed of pure copper formed of tough or copper-free copper or The tough copper or oxygen-free copper is a low-concentration copper alloy of the mother phase, and the rolled copper foil adopts a form of a pure copper-type aggregate structure.

根據本發明的第4方式,提供第1~第3方式所述之附有銅鍍層的壓延銅箔,前述銅鍍層和前述壓延銅箔的整體的厚度為1μm以上20μm以下,前述銅鍍層的厚度為0.1μm以上1.0μm以下。 According to a fourth aspect of the present invention, there is provided a rolled copper foil with a copper plating layer according to the first to third aspects, wherein a thickness of the entire copper plating layer and the rolled copper foil is 1 μm or more and 20 μm or less, and a thickness of the copper plating layer. It is 0.1 μm or more and 1.0 μm or less.

根據本發明的第5方式,提供第1~第4方式中任一項所述之附有銅鍍層的壓延銅箔,其為柔性印刷電路板用附有銅鍍層的壓延銅箔。 According to a fifth aspect of the present invention, there is provided a rolled copper foil with a copper plating layer according to any one of the first to fourth aspects, which is a rolled copper foil with a copper plating layer for a flexible printed circuit board.

根據本發明,提供即使形成了銅鍍層,在再結晶退火步驟後也可以具有優異的耐彎曲性的附有銅鍍層的壓延銅箔。 According to the present invention, there is provided a rolled copper foil with a copper plating layer which can have excellent bending resistance even after a recrystallization annealing step even if a copper plating layer is formed.

10‧‧‧滑動彎曲試驗裝置 10‧‧‧Sliding bending test device

10s‧‧‧衝程 10s‧‧‧ stroke

10r‧‧‧彎曲半徑 10r‧‧‧bend radius

11‧‧‧試樣固定板 11‧‧‧Sample fixing plate

12‧‧‧螺絲 12‧‧‧ screws

13‧‧‧振動傳輸部 13‧‧‧Vibration Transmission Department

14‧‧‧振盪驅動體 14‧‧‧Oscillation driver

50‧‧‧試樣片 50‧‧‧Samples

S10‧‧‧鑄塊的準備步驟 S10‧‧‧Ingot preparation steps

S20‧‧‧熱軋步驟 S20‧‧‧ hot rolling step

S30‧‧‧重複步驟 S30‧‧‧ Repeat steps

S31‧‧‧冷軋步驟 S31‧‧‧ cold rolling step

S32‧‧‧退火步驟 S32‧‧‧ Annealing step

S40‧‧‧最終冷軋步驟 S40‧‧‧ final cold rolling step

S50‧‧‧銅鍍層形成步驟 S50‧‧‧ copper plating formation steps

S60‧‧‧表面處理步驟 S60‧‧‧ Surface treatment steps

附圖說明 DRAWINGS

第1圖是表示本發明一實施方式有關之附有銅鍍層的壓延銅箔的製造步驟的流程圖;第2圖是本發明實施例有關之使用了韌銅的壓延銅箔中按照2θ/θ法進行的X射線繞射的測定圖;第3圖是本發明實施例有關之使用了無氧銅的壓延銅箔中按照2θ/θ法進行的X射線繞射的測定圖;第4圖是本發明實施例有關之使用了添加有Ag的韌銅的壓延銅箔中按照2θ/θ法進行的X射線繞射的測定圖;第5圖是本發明實施例有關之使用了添加有Sn的無氧銅的壓延銅箔中按照2θ/θ法進行的X射線繞射的測定圖;第6圖是本發明實施例1之按照2θ/θ法進行的X射線繞射的測定圖;第7圖是本發明實施例2之按照2θ/θ法進行的X射線繞射的測定圖;第8圖是本發明實施例3之按照2θ/θ法進行的X射線繞射的測定圖;第9圖是本發明實施例4之按照2θ/θ法進行的X射線繞射的測定圖;第10圖是本發明實施例5之按照2θ/θ法進行的X射線繞射的測定圖;第11圖是本發明實施例6之按照2θ/θ法進行的X射線繞射的測定圖;第12圖是本發明實施例7之按照2θ/θ法進行的X射線繞射的測定圖;第13圖是本發明實施例8之按照2θ/θ法進行的X射線繞射的測定圖;第14圖是比較例1之按照2θ/θ法進行的X射線繞射的測定圖;第5圖是比較例2之按照2θ/θ法進行的X射線繞射的測定圖;第16圖是比較例3之按照2θ/θ法進行的X射線繞射的測定圖;第17圖是比較例4之按照2θ/θ法進行的X射線繞射的測定圖;第18圖是對本發明實施例和比較例有關之附有銅鍍層的壓延銅箔的耐彎曲性進行測定的滑動彎曲試驗裝置的示意圖;以及第19圖是表示本發明實施例之壓延銅箔的厚度與彎曲斷裂次數的關係的圖表。 1 is a flow chart showing a manufacturing procedure of a rolled copper foil with a copper plating layer according to an embodiment of the present invention; and FIG. 2 is a 2θ/θ of a rolled copper foil using tough pitch copper according to an embodiment of the present invention. The measurement chart of the X-ray diffraction performed by the method; FIG. 3 is a measurement chart of the X-ray diffraction performed by the 2θ/θ method in the rolled copper foil using the oxygen-free copper according to the embodiment of the present invention; The measurement chart of the X-ray diffraction according to the 2θ/θ method in the rolled copper foil using the tough pitch copper to which Ag is added according to the embodiment of the present invention; and FIG. 5 is a view showing the use of the Sn-added according to the embodiment of the present invention. A measurement chart of X-ray diffraction by a 2θ/θ method in a rolled copper foil of oxygen-free copper; and a measurement chart of X-ray diffraction by a 2θ/θ method according to Embodiment 1 of the present invention; Figure 2 is a measurement diagram of X-ray diffraction according to the 2θ/θ method in the second embodiment of the present invention; and Figure 8 is a measurement diagram of X-ray diffraction according to the 2θ/θ method in the third embodiment of the present invention; Figure 4 is a measurement diagram of X-ray diffraction according to the 2θ/θ method of Embodiment 4 of the present invention; Figure 10 is a fifth embodiment of the present invention. The measurement chart of the X-ray diffraction according to the 2θ/θ method; the 11th is the measurement chart of the X-ray diffraction according to the 2θ/θ method of the sixth embodiment of the present invention; and the twelfth embodiment is the seventh embodiment of the present invention. FIG. 13 is a measurement chart of X-ray diffraction according to the 2θ/θ method according to the eighth embodiment of the present invention; and FIG. 14 is a measurement chart of X-ray diffraction according to the second embodiment of the present invention; The measurement chart of the X-ray diffraction by the /θ method; the fifth figure is the measurement chart of the X-ray diffraction by the 2θ/θ method of Comparative Example 2; and the 16th drawing is the 2θ/θ method of the comparative example 3. FIG. 17 is a measurement diagram of X-ray diffraction according to the 2θ/θ method of Comparative Example 4; and FIG. 18 is a copper plating layer attached to the embodiment and the comparative example of the present invention. A schematic view of a sliding bending test apparatus for measuring the bending resistance of a rolled copper foil; and FIG. 19 is a graph showing the relationship between the thickness of the rolled copper foil and the number of bending fractures of the embodiment of the present invention.

<本發明人等所獲得的見解> <The findings obtained by the inventors, etc.>

如上所述,形成有銅鍍層的壓延銅箔中,即使如上述專利文獻1~3提高了加熱後的{002}面的比率,具有優異的耐彎曲性的壓延銅箔,有時也會見到發生疲勞斷裂等耐彎曲性的惡化。 As described above, in the rolled copper foil in which the copper plating layer is formed, even if the ratio of the {002} plane after heating is increased as in the above Patent Documents 1 to 3, the rolled copper foil having excellent bending resistance may be seen. Deterioration of bending resistance such as fatigue fracture occurs.

本發明人等查明,這樣的斷裂是以銅鍍層為起點發生的。銅鍍層中發生的斷裂直接向壓延銅箔傳播,就附有銅鍍層的壓延銅箔整體觀之,被認為是使耐彎曲性惡化的原因。 The inventors have found that such a fracture occurs as a starting point of a copper plating layer. The fracture occurring in the copper plating layer directly propagates to the rolled copper foil, and the rolled copper foil with the copper plating layer as a whole is considered to be a cause of deterioration of the bending resistance.

本發明人等深入研究的結果查明,與通過規定的加熱再結晶而具有優異的耐彎曲性的壓延銅箔不同,銅鍍層幾乎不會由於此時的加熱而再結晶。即,認為銅鍍層中通過電鍍形成時的晶體結構基本保持原狀地殘留。因此,期望在銅鍍層的形成之初,銅鍍層具有具備充分的耐彎曲性的晶體結構。 As a result of intensive studies by the present inventors, it has been found that, unlike the rolled copper foil which has excellent bending resistance by predetermined heating recrystallization, the copper plating layer hardly recrystallizes by heating at this time. That is, it is considered that the crystal structure at the time of formation by plating in the copper plating layer remains substantially as it is. Therefore, it is desirable that the copper plating layer has a crystal structure having sufficient bending resistance at the beginning of the formation of the copper plating layer.

因此,本發明人等進一步反復研究,從而想到,使形成之初的銅鍍層的晶體結構與習知的銅鍍層不同,來提高附有銅鍍層的壓延銅箔的整體的耐彎曲性。此外,本發明人等還發現了形成具有這樣的晶體結構的銅鍍層的方法。 Therefore, the inventors of the present invention have further studied and thought that the crystal structure of the copper plating layer which is formed at the beginning is different from that of the conventional copper plating layer, and the overall bending resistance of the rolled copper foil with the copper plating layer is improved. Further, the inventors have also found a method of forming a copper plating layer having such a crystal structure.

本發明是以發明人等發現的上述見解為基礎而提出的。 The present invention has been proposed based on the above findings discovered by the inventors.

<本發明的一實施方式> <An embodiment of the present invention>

(1)附有銅鍍層的壓延銅箔的構成 (1) Composition of rolled copper foil with copper plating

首先,對本發明一實施方式有關之附有銅鍍層的壓延銅箔的構成進行說明。 First, the configuration of a rolled copper foil with a copper plating layer according to an embodiment of the present invention will be described.

本實施方式有關之附有銅鍍層的壓延銅箔具備由無氧銅、韌銅、或以無氧銅、韌銅為母相的低濃度銅合金形成的壓延銅箔、以及形成於壓延銅箔的至少一側的面上的銅鍍層。此外,關於所述附有銅鍍層的壓延銅箔,為了例如可以在作為FPC的撓性佈線材料的用途中使用,以整體的厚度為1μm以上20μm以下的方式構成。此外,其中,以銅鍍層的厚度為0.1μm以上1.0μm以下的方式構成。 The rolled copper foil with a copper plating layer according to the present embodiment includes a rolled copper foil formed of oxygen-free copper, tough pitch copper, or a low-concentration copper alloy containing oxygen-free copper or tough copper as a mother phase, and a rolled copper foil. Copper plating on at least one side of the surface. In addition, the rolled copper foil with the copper plating layer is used for the purpose of use as a flexible wiring material for FPC, for example, and has a thickness of 1 μm or more and 20 μm or less. Further, among them, the thickness of the copper plating layer is 0.1 μm or more and 1.0 μm or less.

(壓延銅箔的概要) (summary of rolled copper foil)

附有銅鍍層的壓延銅箔所具備的壓延銅箔構成為例如具備作為主表面的軋製面的板狀,軋製面或背面具有平行的多個結晶面。該壓延銅箔是例如對於以無氧銅(OFC:Oxygen-Free Copper)、韌銅等純銅為原材料的鑄 塊實施後述的熱軋步驟、冷軋步驟等從而製成規定厚度之最終冷軋步驟後、再結晶退火步驟前的壓延銅箔。即,本實施方式有關的壓延銅箔是藉由例如總加工度為90%以上、較佳為94%以上、更佳為96%以上的最終冷軋步驟,以包括銅鍍層的整體的厚度成為例如上述的厚度的方式而構成。然後,如上所述,例如如果兼作為與FPC的基材貼合的步驟而對附有銅鍍層的壓延銅箔實施再結晶退火步驟,則可以期待在再結晶中被調質的壓延銅箔具有優異的耐彎曲性。 The rolled copper foil provided in the rolled copper foil with the copper plating layer is formed into a plate shape having a rolling surface as a main surface, and has a plurality of parallel crystal faces on the rolled surface or the back surface. The rolled copper foil is, for example, casted from pure copper such as oxygen-free copper (OFC: Oxygen-Free Copper) or tough copper. The block is subjected to a hot rolling step, a cold rolling step, and the like described later to prepare a rolled copper foil after a final cold rolling step having a predetermined thickness and before a recrystallization annealing step. In other words, the rolled copper foil according to the present embodiment has a final cold rolling step of, for example, a total workability of 90% or more, preferably 94% or more, and more preferably 96% or more, and the thickness of the entire copper plating layer is included. For example, the above thickness is configured. Then, as described above, for example, if the copper-plated rolled copper foil is subjected to a recrystallization annealing step as a step of bonding to the substrate of the FPC, it is expected that the rolled copper foil which is tempered during recrystallization has Excellent bending resistance.

作為壓延銅箔的原材料的無氧銅是例如JIS C1020等所規定的純度為99.96%以上的銅材。氧含量可以不完全為零,例如可以含有數ppm左右的氧。此外,作為壓延銅箔的原材料的韌銅是例如JIS C1100等所規定的純度為99.9%以上的銅材。韌銅的情況下,氧含量例如為100ppm~600ppm左右。由這些原材料形成的壓延銅箔較佳採取例如純銅型集合組織(也稱為純金屬型集合組織)的形態。或者,作為壓延銅箔,也可以使用在無氧銅、韌銅中微量添加錫(Sn)、銀(Ag)、硼(B)、鈦(Ti)等規定的添加材料,製成低濃度銅合金,從而調整了耐熱性等各項特性的原材料。此時,添加材料的添加量較佳設為不會妨礙由母相的純銅形成純銅型集合組織的晶體配向形態的範圍。 The oxygen-free copper which is a raw material of the rolled copper foil is a copper material having a purity of 99.96% or more as defined in JIS C1020 or the like. The oxygen content may not be completely zero, and may contain, for example, about several ppm of oxygen. Further, the tough pitch copper which is a raw material of the rolled copper foil is, for example, a copper material having a purity of 99.9% or more as defined in JIS C1100 or the like. In the case of tough pitch copper, the oxygen content is, for example, about 100 ppm to 600 ppm. The rolled copper foil formed of these raw materials is preferably in the form of, for example, a pure copper type aggregate structure (also referred to as a pure metal type aggregate structure). Alternatively, as the rolled copper foil, a predetermined addition material such as tin (Sn), silver (Ag), boron (B), or titanium (Ti) may be added to the oxygen-free copper or tough pitch copper to form a low-concentration copper. An alloy that adjusts the properties of various materials such as heat resistance. At this time, it is preferable that the addition amount of the additive material is such a range that the crystal alignment form of the pure copper-type aggregate structure is not formed by the pure copper of the parent phase.

關於最終冷軋步驟中壓延銅箔的總加工度,如果將最終冷軋步驟前的加工物件物(銅板材)的厚度設為TB、將最終冷軋步驟後的加工物件物的厚度設為TA,則表示為總加工度(%)=[(TB-TA)/TB]×100。通過將總加工度設於上述範圍內,則再結晶退火步驟中加熱後的{002}面的比率升高,可以獲得具有高耐彎曲性的壓延銅箔。 Regarding the total degree of processing of the rolled copper foil in the final cold rolling step, if the thickness of the workpiece (copper sheet) before the final cold rolling step is set to T B , and the thickness of the workpiece after the final cold rolling step is set to T A is expressed as the total workability (%) = [(T B - T A ) / T B ] × 100. By setting the total degree of work within the above range, the ratio of the {002} plane after heating in the recrystallization annealing step is increased, and a rolled copper foil having high bending resistance can be obtained.

(銅鍍層的概要) (summary of copper plating)

附有銅鍍層的壓延銅箔所具備的銅鍍層是例如使用電鍍等在作為壓延銅箔的主表面的軋製面或其背面中的至少一側的面上形成的。關於銅鍍層,例如在作為附有銅鍍層的壓延銅箔的最外面的主表面、或作為與壓延銅箔的介面的背面具有平行的多個結晶面。本實施方式有關的銅鍍層形成為例如比壓延銅箔薄,例如構成為0.01μm以上1.0μm以下的厚度。 The copper plating layer provided in the rolled copper foil with a copper plating layer is formed, for example, on the surface of at least one of the rolled surface of the main surface of the rolled copper foil or the back surface thereof by plating or the like. The copper plating layer has, for example, a plurality of crystal faces which are the outermost main surface of the rolled copper foil to which the copper plating layer is attached or which are parallel to the back surface of the interface of the rolled copper foil. The copper plating layer according to the present embodiment is formed to be thinner than, for example, a rolled copper foil, and has a thickness of, for example, 0.01 μm or more and 1.0 μm or less.

通過形成這樣的厚度,例如利用作為後述的粗化粒、防銹層的基底的銅鍍層使壓延銅箔的表面平坦化,能夠使粗化粒均勻地附著或者使防銹層 均勻地形成。此外,通過以這種方式使銅鍍層形成為比壓延銅箔薄,容易實現附有銅鍍層的壓延銅箔整體的耐彎曲性的提高。本實施方式中,為了不產生實際應用上的影響,將1.0μm的厚度作為上限值,銅鍍層形成得越薄越好。 By forming such a thickness, for example, the surface of the rolled copper foil is flattened by a copper plating layer which is a base of the roughened particles and the rustproof layer to be described later, and the roughened particles can be uniformly adhered or the rustproof layer can be formed. Formed evenly. Further, by forming the copper plating layer to be thinner than the rolled copper foil in this manner, it is easy to improve the bending resistance of the entire rolled copper foil with the copper plating layer. In the present embodiment, in order not to cause an influence on practical use, a thickness of 1.0 μm is used as an upper limit value, and the copper plating layer is formed to be as thin as possible.

(銅鍍層的晶體結構) (Crystal structure of copper plating)

附有銅鍍層的壓延銅箔所具備的銅鍍層的多個結晶面相對於上述的壓延銅箔的多個結晶面具有規定的狀態。這樣的狀態可以使用由按照2θ/θ法進行的X射線繞射獲得的繞射峰、如下進行鑑定。 The plurality of crystal faces of the copper plating layer provided in the rolled copper foil with the copper plating layer have a predetermined state with respect to the plurality of crystal faces of the rolled copper foil. Such a state can be identified by using a diffraction peak obtained by X-ray diffraction performed in accordance with the 2θ/θ method as follows.

即,在壓延銅箔的多個結晶面中,將由對{111}面、{002}面、{022}面按照2θ/θ法進行的X射線繞射所獲得的繞射峰的強度值各自設為IR{111}、IR{002}、IR{022}。此外,將各繞射峰的強度值的分率設為PR{111}、PR{002}、PR{022}。 That is, in the plurality of crystal faces of the rolled copper foil, the intensity values of the diffraction peaks obtained by the X-ray diffraction performed on the {111} plane, the {002} plane, and the {022} plane by the 2θ/θ method are each Set to I R {111}, I R {002}, I R {022}. Further, the fraction of the intensity values of the respective diffraction peaks is set to P R {111}, P R {002}, and P R {022}.

各繞射峰的強度值的分率由下述算式表示:PR{111}=[IR{111}/(IR{111}+IR{002}+IR{022})]×100,PR{002}=[IR{002}/(IR{111}+IR{002}+IR{022})]×100,PR{022}=[IR{022}/(IR{111}+IR{002}+IR{022})]×100。 The fraction of the intensity values of the respective diffraction peaks is expressed by the following formula: P R {111}=[I R {111}/(I R {111}+I R {002}+I R {022})]× 100, P R {002}=[I R {002}/(I R {111}+I R {002}+I R {022})]×100,P R {022}=[I R {022} /(I R {111}+I R {002}+I R {022})]×100.

此外,在銅鍍層的多個結晶面中,將由對{111}面、{002}面、{022}面按照2θ/θ法進行的X射線繞射所獲得的繞射峰的強度值各自設為IM{111}、IM{002}、IM{022}。此外,將各繞射峰的強度值的分率設為PM{111}、PM{002}、PM{022}。 Further, in the plurality of crystal faces of the copper plating layer, the intensity values of the diffraction peaks obtained by the X-ray diffraction performed on the {111} plane, the {002} plane, and the {022} plane in accordance with the 2θ/θ method are each set. I M {111}, I M {002}, I M {022}. Further, the fraction of the intensity values of the respective diffraction peaks is set to P M {111}, P M {002}, P M {022}.

各繞射峰的強度值的分率由下述算式表示:PM{111}=[IM{111}/(IM{111}+IM{002}+IM{022})]×100,PM{002}=[IM{002}/(IM{111}+IM{002}+IM{022})]×100,PM{022}=[IM{022}/(IM{111}+IM{002}+IM{022})]×100。 The fraction of the intensity values of the respective diffraction peaks is represented by the following formula: P M {111}=[I M {111}/(I M {111}+I M {002}+I M {022})]× 100, P M {002}=[I M {002}/(I M {111}+I M {002}+I M {022})]×100,P M {022}=[I M {022} /(I M {111}+I M {002}+I M {022})]×100.

此時,銅鍍層具有滿足以下的式(1)的晶體結構,PM{111}15.0…(1)。 At this time, the copper plating layer has a crystal structure satisfying the following formula (1), P M {111} 15.0...(1).

進一步,銅鍍層具有成為下述狀態中的至少任一狀態的晶體結構:滿足以下的式(2)PM{111}>(PR{111}+5)…(2)的狀態;滿足以下的式(3)、(4) PM{002}<(PR{002}-10)…(3) Further, the copper plating layer has a crystal structure in at least one of the following states: a state satisfying the following formula (2) P M {111}>(P R {111}+5) (2); Equation (3), (4) P M {002}<(P R {002}-10)...(3)

PM{002}>(PR{002}+10)…(4)中的任一個的狀態;滿足以下的式(5)、(6)PM{022}<(PR{022}-10)…(5) The state of any one of P M {002}>(P R {002}+10) (4); satisfying the following equations (5), (6) P M {022}<(P R {022}- 10)...(5)

PM{022}>(PR{022}+10)…(6)中的任一個的狀態。 The state of any of P M {022}>(P R {022}+10) (6).

此外,較佳銅鍍層具有滿足上述式(2)、(4)、(6),即PM{111}>(PR{111}+5)…(2) Further, it is preferable that the copper plating layer has the above formulas (2), (4), and (6), that is, P M {111}>(P R {111}+5) (2)

PM{002}>(PR{002}+10)…(4) P M {002}> (P R {002} +10) ... (4)

PM{022}>(PR{022}+10)…(6)中的至少任一個的晶體結構。 P M {022}> (P R {022} +10) ... (6) at least any one of the crystal structure.

以下對銅鍍層具有以上那樣的晶體結構的意義進行說明。 The meaning of the copper plating layer having the above crystal structure will be described below.

(晶體結構的作用) (The role of crystal structure)

如上所述,本實施方式中的壓延銅箔在再結晶退火步驟後{002}面的比率升高、具有優異的耐彎曲性。 As described above, the rolled copper foil in the present embodiment has an increased ratio of the {002} plane after the recrystallization annealing step, and has excellent bending resistance.

另一方面,銅鍍層的晶體結構在最終冷軋步驟後、再結晶退火步驟前的狀態下,滿足上述式(1),進一步滿足式(2)、(3)或(4)、(5)或(6)中的至少任一狀態。通過這樣,銅鍍層不管在再結晶退火步驟的前後,均可獲得優異的耐彎曲性。 On the other hand, the crystal structure of the copper plating layer satisfies the above formula (1) in the state after the final cold rolling step and before the recrystallization annealing step, and further satisfies the formula (2), (3) or (4), (5). Or at least one of (6). By doing so, the copper plating layer can obtain excellent bending resistance regardless of the recrystallization annealing step.

不管銅鍍層如何,一般而言,在通過電鍍而形成層時,容易發生受基底的晶體配向的影響的液相磊晶生長。即可以認為,例如在習知的附有銅鍍層的壓延銅箔中,銅鍍層容易受作為基底的壓延銅箔的晶體配向的影響而發生液相磊晶生長,易於成為與壓延銅箔的晶體配向同樣的晶體配向。如後所述,銅鍍層是針對例如最終冷軋步驟後、再結晶退火步驟前的壓延銅箔而形成的。此時,壓延銅箔的晶體配向成為軋製集合組織的晶體配向狀態。因此,銅鍍層也應當成為與軋製集合組織的晶體配向同樣的狀態。 Regardless of the copper plating layer, in general, when a layer is formed by electroplating, liquid phase epitaxial growth which is affected by the crystal orientation of the substrate easily occurs. In other words, for example, in a conventional copper-plated rolled copper foil, the copper plating layer is easily subjected to liquid crystal epitaxial growth by the crystal orientation of the rolled copper foil as a base, and is liable to become a crystal with the rolled copper foil. Oriented to the same crystal alignment. As will be described later, the copper plating layer is formed, for example, for the rolled copper foil after the final cold rolling step and before the recrystallization annealing step. At this time, the crystal alignment of the rolled copper foil becomes a crystal alignment state of the rolled aggregate structure. Therefore, the copper plating layer should also be in the same state as the crystal alignment of the rolled aggregate structure.

在對這樣的附有銅鍍層的壓延銅箔進行加熱、通過再結晶使壓延銅箔軟化時,壓延銅箔的軋製集合組織的晶體配向向再結晶集合組織的晶體配向變化,從而壓延銅箔獲得了優異的耐彎曲性。然而,如上所述,根據本 發明人等的發現,通過這樣的加熱,銅鍍層幾乎不會再結晶。 When such a copper-plated rolled copper foil is heated and the rolled copper foil is softened by recrystallization, the crystal orientation of the rolled aggregate structure of the rolled copper foil changes to the crystal orientation of the recrystallized aggregate structure, thereby rolling the copper foil. Excellent bending resistance is obtained. However, as described above, according to this The inventors discovered that the copper plating layer hardly recrystallizes by such heating.

再結晶退火步驟時,壓延銅箔的晶體配向的變化的驅動力為:最終冷軋步驟中由軋製加工導致之積蓄在壓延銅箔內的加工應變、以及由再結晶退火的加熱而產生的熱能。然而,即使使銅鍍層的晶體配向變化,此時可以作為驅動力的也僅為由加熱而產生的熱能。因此可以認為,銅鍍層中,由於驅動力不足,幾乎不發生晶體配向的變化,軋製集合組織的晶體配向狀態停留在磊晶生長的狀態。由於這樣的晶體配向,銅鍍層中不能獲得充分的耐彎曲性。 In the recrystallization annealing step, the driving force for the change in the crystal orientation of the rolled copper foil is: the processing strain accumulated in the rolled copper foil due to the rolling process in the final cold rolling step, and the heating by recrystallization annealing. Thermal energy. However, even if the crystal alignment of the copper plating layer is changed, the heat that can be used as the driving force at this time is only the heat generated by the heating. Therefore, it is considered that in the copper plating layer, since the driving force is insufficient, the crystal alignment change hardly occurs, and the crystal alignment state of the rolled aggregate structure stays in the state of epitaxial growth. Due to such crystal alignment, sufficient bending resistance cannot be obtained in the copper plating layer.

因此,本發明人等為了在形成銅鍍層時,銅鍍層的晶體組織至少不成為軋製集合組織的晶體配向狀態而進行了深入研究。其結果表示,如果附有銅鍍層的壓延銅箔在最終冷軋步驟後、再結晶退火步驟前的狀態下,具有滿足上述式(1)、進一步滿足式(2)、(3)或(4)、(5)或(6)中的至少任一狀態的晶體結構,則形成耐彎曲性優異的銅鍍層。 Therefore, the inventors of the present invention have conducted intensive studies in order to form a copper plating layer, and the crystal structure of the copper plating layer is at least not in the crystal alignment state of the rolled aggregate structure. The result shows that if the rolled copper foil with the copper plating is in the state after the final cold rolling step and before the recrystallization annealing step, it has the above formula (1), and further satisfies the formula (2), (3) or (4). The crystal structure of at least one of (5) or (6) forms a copper plating layer excellent in bending resistance.

關於這樣的銅鍍層表現高耐彎曲性的詳細機制還在深入研究中,但可以說,通過滿足上述那樣的規定算式,至少銅鍍層的晶體結構未成為磊晶狀態。 Although the detailed mechanism for exhibiting high bending resistance of such a copper plating layer is still under investigation, it can be said that at least the crystal structure of the copper plating layer is not in an epitaxial state by satisfying the predetermined formula described above.

即,如果對本實施方式有關的壓延銅箔的軋製集合組織進行按照2θ/θ法進行的X射線繞射,則{022}面表現為主峰。接著,{002}面的繞射峰表現第2強的強度。另一方面,{111}面的繞射峰強度值極小。 In other words, when the rolled aggregate structure of the rolled copper foil according to the present embodiment is subjected to X-ray diffraction by the 2θ/θ method, the {022} plane represents a main peak. Then, the diffraction peak of the {002} plane exhibits the second strongest intensity. On the other hand, the diffraction peak intensity value of the {111} plane is extremely small.

因此,本發明人等關注{111}面、{002}面、{022}面這3個面的繞射峰,對各繞射峰強度值的分率PR{111}、PR{002}、PR{022}、以及與它們相對應的銅鍍層的繞射峰強度值的分率PM{111}、PM{002}、PM{022}進行比較。通過這樣,可以對壓延銅箔與銅鍍層的晶體配向的狀態是否相同進行判斷。 Therefore, the present inventors focused on the diffraction peaks of the three faces of the {111} plane, the {002} plane, and the {022} plane, and the fractions of the respective diffraction peak intensity values P R {111}, P R {002 }, P R {022}, and the fractions of the diffraction peak intensity values of the copper plating layers corresponding thereto, P M {111}, P M {002}, P M {022}. Thus, it is possible to judge whether or not the state in which the crystal of the rolled copper foil and the copper plating layer are aligned is the same.

即,本實施方式有關的壓延銅箔中,例如{111}面的繞射峰強度值的分率PR{111}應當極小。不過,通過滿足式(1),則本實施方式所有關的銅鍍層的{111}面的繞射峰強度值的分率PM{111}並非那樣極小的分率,顯示保持規定的分率而{111}面存在於銅鍍層的晶體組織中。 In other words, in the rolled copper foil according to the present embodiment, for example, the fraction P R {111} of the diffraction peak intensity value of the {111} plane should be extremely small. However, by satisfying the formula (1), the fraction P M {111} of the diffraction peak intensity value of the {111} plane of the copper plating layer according to the present embodiment is not such a small fraction, and the display maintains a predetermined fraction. The {111} plane is present in the crystal structure of the copper plating.

另外,除此以外還可以說,如果銅鍍層具有滿足式(2)、(3)或(4)、(5)或(6)中的至少任一個的晶體結構,則不會成為磊晶狀態,而成為與壓延銅箔的晶體配向不同的狀態。 In addition, it can be said that if the copper plating layer has a crystal structure satisfying at least one of the formula (2), (3) or (4), (5) or (6), it does not become an epitaxial state. It is in a state different from the crystal alignment of the rolled copper foil.

即,式(2)為銅鍍層的PM{111}與壓延銅箔的PR{111}相比充分地大,表示銅鍍層的晶體配向狀態與壓延銅箔不同。 That is, the formula (2) is that the P M {111} of the copper plating layer is sufficiently larger than the P R {111} of the rolled copper foil, and the crystal alignment state of the copper plating layer is different from that of the rolled copper foil.

此外,式(3)為銅鍍層的PM{002}與壓延銅箔的PR{002}相比極小。此外,式(4)為銅鍍層的PM{002}與壓延銅箔的PR{002}相比極大。這樣,式(3)、(4)均表示銅鍍層的PM{002}與壓延銅箔的PR{002}不同。 Further, the formula (3) is that the P M {002} of the copper plating layer is extremely small compared to the P R {002} of the rolled copper foil. Further, the formula (4) is that the P M {002} of the copper plating layer is extremely larger than the P R {002} of the rolled copper foil. Thus, both equations (3) and (4) indicate that P M {002} of the copper plating layer is different from P R {002} of the rolled copper foil.

此外,式(5)為銅鍍層的PM{022}與壓延銅箔的PR{022}相比極小。此外,式(6)為銅鍍層的PM{022}與壓延銅箔的PR{022}相比極大。這樣,式(5)、(6)均表示銅鍍層的PM{022}與壓延銅箔的PR{022}不同。 Further, the formula (5) is that the P M {022} of the copper plating layer is extremely small compared to the P R {022} of the rolled copper foil. Further, the formula (6) is that the P M {022} of the copper plating layer is extremely larger than the P R {022} of the rolled copper foil. Thus, both equations (5) and (6) indicate that P M {022} of the copper plating layer is different from P R {022} of the rolled copper foil.

如上所述、銅鍍層滿足上述式(2)、(3)或(4)、(5)或(6)中的任一狀態,則可以說銅鍍層的晶體配向狀態沒有發生磊晶生長,與壓延銅箔不同。此時,也可以不是僅滿足式(2)、(3)或(4)、(5)或(6)的狀態中的1個,而是滿足多個狀態。 As described above, if the copper plating layer satisfies any one of the above formulas (2), (3) or (4), (5) or (6), it can be said that the crystal alignment state of the copper plating layer does not undergo epitaxial growth, and The rolled copper foil is different. At this time, instead of satisfying only one of the states of the formula (2), (3), or (4), (5), or (6), a plurality of states may be satisfied.

此外可以說較佳通過銅鍍層滿足上述式(2)、(4)、(6)中的至少任一個,銅鍍層的晶體結構不僅與壓延銅箔不同,還成為容易獲得耐彎曲性更高的晶體結構。關於滿足上述各式(2)、(4)、(6)的意義進行深入研究,已知至少通過{002}面大量存在,壓延銅箔等銅材的耐彎曲性提高。因此推測,例如通過滿足式(4),銅鍍層的耐彎曲性也提高。 Further, it can be said that it is preferable that at least one of the above formulas (2), (4), and (6) is satisfied by the copper plating layer, and the crystal structure of the copper plating layer is not only different from that of the rolled copper foil, but also becomes more susceptible to bending resistance. Crystal structure. In order to carry out intensive studies to satisfy the meanings of the above formulas (2), (4), and (6), it is known that at least the {002} plane exists in a large amount, and the bending resistance of a copper material such as a rolled copper foil is improved. Therefore, it is presumed that, for example, by satisfying the formula (4), the bending resistance of the copper plating layer is also improved.

此外,另一方面,在銅鍍層不滿足上述式(1)、或者上述式(2)、(3)或(4)、(5)或(6)中的任何狀態均不滿足的情況下,可以說銅鍍層的晶體配向狀態相對於壓延銅箔的晶體配向發生磊晶生長,與壓延銅箔大致同等。 Further, on the other hand, in the case where the copper plating layer does not satisfy the above formula (1), or any of the above formulas (2), (3) or (4), (5) or (6) is not satisfied, It can be said that the crystal alignment state of the copper plating layer is epitaxially grown with respect to the crystal alignment of the rolled copper foil, and is substantially equivalent to the rolled copper foil.

(附有銅鍍層的壓延銅箔的其他構成) (Other configurations of rolled copper foil with copper plating)

在附有銅鍍層的壓延銅箔的銅鍍層上,可以將例如粗化銅鍍層、膠囊銅鍍層、防銹層按照上述順序進行設置。粗化銅鍍層具有粗化粒。粗化粒是例如銅(Cu)單體(或稱單質)或在銅中含有鐵(Fe)、鉬(Mo)、鎳(Ni)、鈷(Co)、錫(Sn)、鋅(Zn)等中的至少1種以上之直徑1μm左右的金屬粒子。膠囊銅鍍層是粗化粒生長為瘤狀突起之所謂包裝鍍層。防銹層具有例如鎳鍍層、鋅鍍層、3價鉻化處理層、矽烷偶聯層按照上述順序形成的層疊結構。 On the copper plating layer of the rolled copper foil to which the copper plating layer is attached, for example, a roughened copper plating layer, a capsule copper plating layer, and a rustproof layer can be provided in the above-described order. The roughened copper plating layer has coarsened particles. The roughened particles are, for example, copper (Cu) monomers (or simple substances) or iron (Fe), molybdenum (Mo), nickel (Ni), cobalt (Co), tin (Sn), zinc (Zn) in copper. At least one or more kinds of metal particles having a diameter of about 1 μm. The capsule copper plating is a so-called packaging coating in which coarsened grains are grown into knob-like projections. The rustproof layer has a laminated structure in which, for example, a nickel plating layer, a zinc plating layer, a trivalent chromizing layer, and a decane coupling layer are formed in the above-described order.

(2)附有銅鍍層的壓延銅箔的製造方法 (2) Method for producing rolled copper foil with copper plating

為了獲得本實施方式有關的銅鍍層,本發明人等對於最終冷軋步驟後、再結晶退火步驟前的壓延銅箔成為與發生磊晶生長的晶體配向不同的晶體配向的狀態、即與軋製集合組織不同的晶體配向的狀態,進行了深入研究。 In order to obtain the copper plating layer according to the present embodiment, the inventors of the present invention have a state in which the rolled copper foil before the final cold rolling step and before the recrystallization annealing step has a crystal alignment different from the crystal orientation in which epitaxial growth occurs, that is, with rolling. The state of the organization of different crystal alignments has been studied intensively.

具體而言,認為可以在形成銅鍍層時的電鍍浴中添加可以進行抑制的藥劑(以下也稱為磊晶生長抑制劑、非磊晶劑),以使銅鍍層相對於壓延銅箔不會磊晶生長,並嘗試了各種添加劑。其結果確認到電鍍等所用的規定的添加劑作為非磊晶劑會抑制銅鍍層的磊晶生長。具體而言,發現迄今為止作為光澤劑使用的規定的添加劑中、作為非磊晶劑的新的效果。 Specifically, it is considered that a chemical which can be suppressed (hereinafter also referred to as an epitaxial growth inhibitor or a non-plating agent) can be added to the plating bath in the case of forming a copper plating layer so that the copper plating layer does not protrude relative to the rolled copper foil. Crystal growth and various additives were tried. As a result, it was confirmed that a predetermined additive used for plating or the like as a non-plating agent suppresses epitaxial growth of the copper plating layer. Specifically, a new effect as a non-exhalation agent among the predetermined additives used as a brightener has been found.

接著,基於以上見解,用第1圖對本發明一實施方式有關之附有銅鍍層的壓延銅箔的製造方法進行說明。第1圖是表示本實施方式有關之附有銅鍍層的壓延銅箔的製造步驟的流程圖。 Next, based on the above findings, a method of manufacturing a rolled copper foil with a copper plating layer according to an embodiment of the present invention will be described with reference to FIG. Fig. 1 is a flow chart showing a manufacturing procedure of a rolled copper foil with a copper plating layer according to the present embodiment.

(鑄塊的準備步驟S10) (Preparation step S10 of ingot)

如第1圖所示,首先製造附有銅鍍層的壓延銅箔的壓延銅箔部分。 As shown in Fig. 1, first, a rolled copper foil portion of a rolled copper foil with a copper plating layer was produced.

即,以無氧銅(OFC)、韌銅等純銅為原材料進行鑄造,從而準備鑄塊(鑄錠)。鑄塊形成例如具有規定厚度、規定寬度的板狀。作為原材料的無氧銅、韌銅也可以製成為了調整壓延銅箔的各項特徵而添加有規定的添加材料的低濃度銅合金。 In other words, casting is performed by casting pure copper such as oxygen-free copper (OFC) or tough pitch copper as a raw material to prepare an ingot (ingot). The ingot is formed into a plate shape having a predetermined thickness and a predetermined width, for example. As the raw material, oxygen-free copper or tough pitch copper can also be used as a low-concentration copper alloy to which a predetermined additive material is added in order to adjust various characteristics of the rolled copper foil.

可以用添加材料進行調整的壓延銅箔的各項特徵例如有耐熱性。如上所述,在FPC用的壓延銅箔中用於獲得高耐彎曲性的再結晶退火步驟兼作為例如與FPC的基材貼合的步驟而進行。貼合時的加熱溫度根據例如FPC之由樹脂等形成的基材的固化溫度、所使用的黏接劑的固化溫度等而配合設定,溫度條件的範圍寬,多種多樣。為了使壓延銅箔的軟化溫度配合這樣設定的加熱溫度,有時會適當添加可以調整壓延銅箔的耐熱性的添加材料。 The characteristics of the rolled copper foil which can be adjusted with the additive material are, for example, heat resistance. As described above, the recrystallization annealing step for obtaining high bending resistance in the rolled copper foil for FPC is also performed as a step of bonding to a substrate of FPC, for example. The heating temperature at the time of bonding is set in accordance with, for example, the curing temperature of the substrate formed of a resin such as FPC, the curing temperature of the adhesive to be used, and the like, and the temperature conditions are wide and varied. In order to mix the softening temperature of the rolled copper foil with the heating temperature set as described above, an additive which can adjust the heat resistance of the rolled copper foil may be appropriately added.

作為本實施方式所使用的鑄塊,將未添加添加材料的鑄塊、添加有幾種類型的添加材料的鑄塊例示於以下的表1。這裏,表1所示的添加材料的添加量的範圍內,壓延銅箔的晶體配向的狀態均採取純銅型集合組織的形態。 As the ingot used in the present embodiment, an ingot in which no additive material is added and an ingot in which several types of additive materials are added are exemplified in Table 1 below. Here, in the range of the addition amount of the additive material shown in Table 1, the state of the crystal alignment of the rolled copper foil adopts the form of a pure copper type aggregate structure.

此外,作為表1所示的添加材料、其他添加材料,使耐熱性上升或下降的添加材料的代表例中,例如有添加10ppm~2000ppm左右的錫(Sn)、銀(Ag)、硼(B)、鈮(Nb)、鈦(Ti)、鎳(Ni)、鋯(Zr)、釩(V)、錳(Mn)、鉿(Hf)、鉭(Ta)和鈣(Ca)中之任一種或多種元素的例子。或者,有添加Ag作為第1添加元素、添加上述元素中之任一種或多種元素作為第2添加元素的例子。除此以外,還可以微量添加鉻(Cr)、鋅(Zn)、鎵(Ga)、鍺(Ge)、砷(As)、鎘(Cd)、銦(In)、錫(Sn)、銻(Sb)、金(Au)等。 In the representative example of the additive material which increases or decreases the heat resistance, the additive material and the other additive materials shown in Table 1 are, for example, tin (Sn), silver (Ag), or boron (B) added in an amount of about 10 ppm to 2,000 ppm. ), any of niobium (Nb), titanium (Ti), nickel (Ni), zirconium (Zr), vanadium (V), manganese (Mn), hafnium (Hf), tantalum (Ta), and calcium (Ca) Or an example of multiple elements. Alternatively, there is an example in which Ag is added as the first additive element, and any one or more of the above elements are added as the second additive element. In addition, chromium (Cr), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), tin (Sn), and antimony may be added in a small amount. Sb), gold (Au), etc.

這裏,鑄塊的組成在經過後述的最終冷軋步驟S40後的壓延銅箔中也大體維持原狀,在鑄塊中加入了添加材料的情況下,鑄塊與壓延銅箔形成大體相同的添加材料濃度。 Here, the composition of the ingot is substantially maintained as it is in the rolled copper foil after the final cold rolling step S40 to be described later, and when the additive material is added to the ingot, the ingot and the rolled copper foil form substantially the same additive material. concentration.

此外,後述的退火步驟S32中之溫度條件根據由銅材質、添加材料決定的耐熱性而適當變更。不過,上述銅材質、添加材料、據此而進行的退火步驟S32的溫度條件的變更等對本實施方式的效果幾乎不產生影響。 In addition, the temperature conditions in the annealing step S32 to be described later are appropriately changed depending on the heat resistance determined by the copper material or the additive material. However, the copper material, the additive material, the change in the temperature condition of the annealing step S32 performed therewith, and the like have little effect on the effects of the present embodiment.

(熱軋步驟S20) (hot rolling step S20)

接著,對準備的鑄塊實施熱軋,製成板厚比鑄造後的規定厚度薄的板材。 Next, the prepared ingot is subjected to hot rolling to obtain a sheet material having a thickness smaller than a predetermined thickness after casting.

(重複步驟S30) (repeat step S30)

接著,進行重複實施規定次數的冷軋步驟S31和退火步驟S32的重複步驟S30。即,對實施冷軋而加工固化了的上述板材實施退火處理,使板材退火,從而緩和加工固化。通過重複規定次數的該操作,得到被稱為“坯料”的銅條。在銅材中添加有調整耐熱性的添加材料等時,根據銅材的耐熱性適當變更退火處理的溫度條件。 Next, repeating step S30 of repeating the predetermined number of cold rolling steps S31 and annealing step S32 is performed. That is, the sheet material processed and solidified by cold rolling is subjected to an annealing treatment to anneal the sheet material, thereby relaxing the processing and solidification. By repeating this operation a predetermined number of times, a copper strip called "blank" is obtained. When an additive material or the like which adjusts heat resistance is added to the copper material, the temperature condition of the annealing treatment is appropriately changed depending on the heat resistance of the copper material.

這裏,重複步驟S30中,將重複過程中的退火步驟S32稱為“中間退火步驟”。此外,將重複的最後、即在進行後述最終冷軋步驟S40之前進行的退火步驟S32稱為“最終退火步驟”或“坯料退火步驟”。坯料退火步驟中,對上述銅條(坯料)實施坯料退火處理,得到退火坯料。在坯料退火步驟中,也根據銅材的耐熱性適當變更溫度條件。此時,坯料退火步驟較佳在可以充分緩和在由上述各步驟引起的加工應變的溫度條件下實施、例如在與完全退火處理大體同等的溫度條件下實施。 Here, in step S30, the annealing step S32 in the repeating process is referred to as an "intermediate annealing step". Further, the annealing step S32 which is performed at the last of the repetition, that is, before the final cold rolling step S40 described later, is referred to as a "final annealing step" or a "blank annealing step". In the billet annealing step, the copper strip (blank) is subjected to a blank annealing treatment to obtain an annealed billet. In the billet annealing step, the temperature conditions are also appropriately changed depending on the heat resistance of the copper material. At this time, the billet annealing step is preferably carried out under temperature conditions which can sufficiently alleviate the processing strain caused by the above respective steps, for example, under substantially the same temperature conditions as the full annealing treatment.

(最終冷軋步驟S40) (final cold rolling step S40)

接著,實施最終冷軋步驟S40。最終冷軋也被稱為最終加工冷軋,對退火坯料連續多次實施作為最終加工的冷軋,製成薄銅箔狀。此時,將最終冷軋步驟S40中的總加工度設為90%以上,較佳設為94%以上,更較佳設為96%以上,以獲得具有高耐彎曲性的壓延銅箔。通過這樣,在再結晶退火步驟後,製成容易獲得優異的耐彎曲性的壓延銅箔。 Next, a final cold rolling step S40 is performed. The final cold rolling is also referred to as final processing cold rolling, and the annealed billet is continuously subjected to cold rolling as a final processing a plurality of times to form a thin copper foil. At this time, the total degree of work in the final cold rolling step S40 is set to 90% or more, preferably 94% or more, and more preferably 96% or more, to obtain a rolled copper foil having high bending resistance. Thus, after the recrystallization annealing step, a rolled copper foil which is easy to obtain excellent bending resistance is obtained.

通過以上操作,製造本實施方式有關的附有銅鍍層的壓延銅箔中的壓延銅箔。 By the above operation, the rolled copper foil in the copper-plated rolled copper foil according to the present embodiment is produced.

(銅鍍層形成步驟S50) (copper plating forming step S50)

接著,在壓延銅箔的軋製面或其背面中的至少一側的面上形成銅鍍層。 Next, a copper plating layer is formed on at least one of the rolled surface of the rolled copper foil or the back surface thereof.

形成銅鍍層時,預先將壓延銅箔依次在脫脂浴、酸洗滌浴中浸漬,對壓延銅箔的表面進行洗滌。即,在脫脂浴中,使用例如氫氧化鈉(NaOH)水溶液等鹼性溶液進行陰極電解脫脂。接著在酸洗滌浴中,用例如硫酸(H2SO4)水溶液、銅蝕刻液等酸性溶液對壓延銅箔的表面實施酸洗滌,實現表面上殘留的鹼性溶液的中和,同時,將表面上形成的銅氧化膜(CuO)等除去。 When the copper plating layer is formed, the rolled copper foil is sequentially immersed in a degreasing bath or an acid washing bath, and the surface of the rolled copper foil is washed. That is, in the degreasing bath, cathodic electrolytic degreasing is performed using an alkaline solution such as an aqueous solution of sodium hydroxide (NaOH). Next, in the acid washing bath, the surface of the rolled copper foil is subjected to an acid washing with an acidic solution such as an aqueous solution of sulfuric acid (H 2 SO 4 ) or a copper etching solution to neutralize the residual alkaline solution on the surface, and at the same time, the surface is The copper oxide film (CuO) or the like formed thereon is removed.

銅鍍層的形成可以使用例如電鍍等。作為電鍍浴,可以使用例如裝滿以硫酸銅(CuSO4)和硫酸(H2SO4)為主要成分之水溶液的硫酸銅-硫酸浴等酸性銅鍍浴。這裏,從成本方面等觀點出發,設為使用硫酸銅-硫酸浴等,但銅鍍浴可以使用的溶液等不限於此。 For the formation of the copper plating layer, for example, plating or the like can be used. As the plating bath, for example, an acid copper plating bath such as a copper sulfate-sulfuric acid bath filled with an aqueous solution containing copper sulfate (CuSO 4 ) and sulfuric acid (H 2 SO 4 ) as a main component can be used. Here, from the viewpoint of cost and the like, a copper sulfate-sulfuric acid bath or the like is used, but a solution or the like which can be used in the copper plating bath is not limited thereto.

此時,較佳使電鍍電流密度比極限電流密度小。通過這樣,抑制了表面上的凹凸的產生,可以獲得更平坦的銅鍍層。可是,電鍍電流密度高則生產率提高。因此,較佳電鍍電流密度在比極限電流密度小的範圍內、並 且盡可能高地進行設定。以下例示電鍍條件的標準。不過,以下的條件終究是電鍍條件的一個例子,並非僅限於此。硫酸銅-硫酸浴等的液體組成、液溫、電解條件可以從較廣的範圍內選擇。 At this time, it is preferable to make the plating current density smaller than the limiting current density. By doing so, generation of unevenness on the surface is suppressed, and a flatter copper plating layer can be obtained. However, when the plating current density is high, the productivity is improved. Therefore, the preferred plating current density is in a range smaller than the limiting current density, and And set it as high as possible. The criteria for plating conditions are exemplified below. However, the following conditions are an example of plating conditions and are not limited to this. The liquid composition, liquid temperature, and electrolysis conditions of a copper sulfate-sulfuric acid bath or the like can be selected from a wide range.

硫酸銅五水合物:20g/L~300g/L Copper sulfate pentahydrate: 20g/L~300g/L

硫酸:10g/L~200g/L Sulfuric acid: 10g/L~200g/L

液溫:15℃~50℃ Liquid temperature: 15 ° C ~ 50 ° C

電鍍電流密度:1A/dm2~30A/dm2(小於極限電流密度) Plating current density: 1A/dm 2 ~30A/dm 2 (less than the limiting current density)

電鍍時間:1秒~60秒 Plating time: 1 second ~ 60 seconds

此外,硫酸銅-硫酸浴中,作為添加劑,添加例如雙(3-磺丙基)二硫二鈉(或稱聚二硫二丙烷磺酸鈉,以下也稱為SPS)、3-巰基-1-丙磺酸(以下也稱為MPS)等具有巰基(-SH)的化合物。此外,作為其他添加劑,添加以聚乙二醇(PEG,Poly Ethylene Glycol)為主要成分的藥液和流平劑。 Further, in the copper sulfate-sulfuric acid bath, as an additive, for example, bis(3-sulfopropyl)dithiodisodium (or sodium polydithiodipropane sulfonate, hereinafter also referred to as SPS), 3-mercapto-1 is added. a compound having a mercapto group (-SH) such as propanesulfonic acid (hereinafter also referred to as MPS). Further, as other additives, a chemical liquid and a leveling agent containing polyethylene glycol (PEG, Poly Ethylene Glycol) as a main component are added.

在添加了這樣的添加劑的酸性鍍銅浴中浸漬表面進行了清洗的壓延銅箔,實施以壓延銅箔為陰極的電鍍處理,在壓延銅箔的一面或兩面形成銅鍍層。通過這樣,對於最終冷軋步驟後、再結晶退火步驟前的壓延銅箔,形成與發生磊晶生長的晶體配向不同的晶體配向的狀態、即與軋製集合組織不同的晶體配向的狀態,從而得到本實施方式有關的銅鍍層。即,這樣的藥液中的SPS、MPS等成分作為磊晶生長抑制劑(非磊晶劑)發揮作用。 A rolled copper foil having a surface cleaned is immersed in an acid copper plating bath to which such an additive is added, and a plating treatment using a rolled copper foil as a cathode is performed, and a copper plating layer is formed on one surface or both surfaces of the rolled copper foil. In this way, the rolled copper foil before the final cold rolling step and before the recrystallization annealing step is in a state of crystal alignment different from the crystal orientation in which epitaxial growth occurs, that is, a state in which the crystal is aligned with the rolled aggregate structure, thereby The copper plating layer according to the embodiment is obtained. In other words, components such as SPS and MPS in such a chemical solution function as epitaxial growth inhibitors (non-plating agents).

通常,以SPS、MPS等為主要成分的藥液在鍍銅處理中被用作光澤劑而發揮作用。在這種情況下,關於所述藥液,通常對於每1升電鍍液,如果是SPS,則以成為5mg~10mg左右的方式進行添加。 Usually, a chemical liquid containing SPS, MPS or the like as a main component functions as a brightening agent in a copper plating treatment. In this case, the chemical solution is usually added in an amount of about 5 mg to 10 mg per SP liter of the plating solution.

然而,本發明人等發現,通過以比通常的量多的量添加例如SPS、MPS等,對於最終冷軋步驟後、再結晶退火步驟前的壓延銅箔,可以獲得與發生磊晶生長的晶體配向不同的晶體配向的銅鍍層。根據本發明人等的發現,推測在形成銅鍍層時,利用以比通常多的量添加的SPS、MPS等非磊晶劑,銅鍍層中積蓄了某些能量。此外還認為,該能量具有以下程度的大小:銅鍍層能夠不影響壓延銅箔的晶體配向地進行晶體生長、即銅鍍層不相對於壓延銅箔發生磊晶生長。 However, the present inventors have found that by adding, for example, SPS, MPS, or the like in an amount larger than usual, crystals which are epitaxially grown can be obtained for the rolled copper foil after the final cold rolling step and before the recrystallization annealing step. A copper plating that is aligned with different crystals. According to the findings of the inventors of the present invention, it is presumed that when a copper plating layer is formed, some energy is accumulated in the copper plating layer by using a non-plating agent such as SPS or MPS added in an amount larger than usual. Further, it is considered that the energy has a size such that the copper plating layer can perform crystal growth without affecting the crystal orientation of the rolled copper foil, that is, the copper plating layer does not undergo epitaxial growth with respect to the rolled copper foil.

目前,本發明人等推測,對銅鍍層賦予這樣的能量可能是通過以下的任一作用而發生的。即,一方面,認為主要是添加比使用一般光澤劑時還 多的SPS等而引起的作用。此外,另一方面,除了大量添加SPS等之外,還認為是這樣的SPS等與其他藥液的某些相互作用。作為其他藥液,可以認為是:電鍍液中添加的其他藥液的主要成分、或者不是主要成分的成分、或/和不僅是藥液、還有電鍍液的某些成分等。 At present, the inventors have speculated that the application of such energy to the copper plating layer may occur by any of the following effects. That is, on the one hand, it is considered that the main addition is more than when using a general gloss agent. A lot of SPS and so on. Further, on the other hand, in addition to the large addition of SPS or the like, it is considered to be some interaction of such SPS and the like with other chemical liquids. The other chemical liquid is considered to be a main component of another chemical liquid added to the plating liquid, or a component which is not a main component, or/and not only a chemical liquid, but also some components of the plating liquid.

本發明人等發現的SPS等的這樣的效果、用途、使用方法與這些化合物作為光澤劑的習知的效果、用途、使用方法完全不同,是新穎的效果、用途、使用方法。 Such effects, uses, and methods of use of SPS and the like discovered by the present inventors are completely different from the conventional effects, uses, and methods of use of these compounds as a glossing agent, and are novel effects, uses, and methods of use.

上述觀點從對例如上述專利文獻4、5的粗化箔與上述本實施方式有關之附有銅鍍層的壓延銅箔進行比較觀之也是明顯的。 The above viewpoint is also apparent from the comparison of the roughened foils of the above-mentioned Patent Documents 4 and 5 and the rolled copper foil with the copper plating layer according to the above-described embodiment.

專利文獻4、5中,為了使粗化瘤均勻地附著,在壓延銅箔的表面形成了銅鍍層。此時的目的在於,通過改變電流密度而謀求銅鍍層表面的平坦化、以及減少銅鍍層表面的被稱為凹痕(Crater)的凹陷,使在其上形成的粗化瘤均勻化。這樣的專利文獻4、5中,銅鍍層為在壓延銅箔的晶體配向發生磊晶生長的狀態,這可以通過下面的理由容易地推測。 In Patent Documents 4 and 5, in order to uniformly adhere the roughened tumor, a copper plating layer is formed on the surface of the rolled copper foil. The purpose at this time is to reduce the thickness of the copper plating layer by changing the current density, and to reduce the depression called a crater on the surface of the copper plating layer, and to uniformize the roughening tumor formed thereon. In Patent Documents 4 and 5, the copper plating layer is in a state in which epitaxial growth occurs in the crystal alignment of the rolled copper foil, which can be easily estimated for the following reasons.

首先,專利文獻4中原來並沒有使用SPS等藥劑。此外,關於形成銅鍍層的方法的其他公開內容也全部為公知的內容。由此可以推定,銅鍍層必然是在壓延銅箔的晶體配向發生磊晶生長的狀態。 First, in Patent Document 4, a drug such as SPS is not used. Further, other disclosures regarding the method of forming a copper plating layer are also well known. From this, it can be presumed that the copper plating layer is in a state in which epitaxial growth occurs in the crystal alignment of the rolled copper foil.

此外,專利文獻5中,對於使用SPS的實施例也進行了公開,但從所述實施例的結果觀之,推測仍然是銅鍍層在壓延銅箔的晶體配向發生磊晶生長的狀態。具體而言,專利文獻5的實施例1、4和比較例2的銅鍍層的厚度均為約0.1μm。此外,不管是否使用了SPS都沒有關係,彎曲壽命次數均為相互大體相同的結果,為4.1×106~4.5×106次。此處,彎曲壽命次數可以作為耐彎曲性的指標之一,可以說彎曲壽命次數越多則耐彎曲性越高。這樣,即使是使用了SPS的銅鍍層,也僅獲得與未使用SPS的銅鍍層同等程度的耐彎曲性,因此認為為相對於壓延銅箔發生磊晶生長的狀態。 Further, in Patent Document 5, an example in which SPS is used is also disclosed. However, from the results of the above examples, it is presumed that the copper plating layer is in a state in which epitaxial growth occurs in the crystal alignment of the rolled copper foil. Specifically, the thicknesses of the copper plating layers of Examples 1, 4 and Comparative Example 2 of Patent Document 5 were both about 0.1 μm. In addition, it does not matter whether or not SPS is used, and the number of bending life times is substantially the same as each other, and is 4.1 × 10 6 to 4.5 × 10 6 times. Here, the number of bending lifes can be used as one of the indexes of the bending resistance, and it can be said that the higher the bending life count, the higher the bending resistance. As described above, even if the copper plating layer using SPS is used, only the bending resistance equivalent to that of the copper plating layer not using SPS is obtained, and therefore, it is considered that the epitaxial growth occurs with respect to the rolled copper foil.

這樣,專利文獻4、5中認為,對於壓延銅箔單體的耐彎曲性,通過賦予發生磊晶生長的銅鍍層,會使附有銅鍍層的壓延銅箔整體的耐彎曲性惡化。這裏,專利文獻4、專利文獻5所記載的彎曲壽命次數與後述的本發明的實施例等所記載的彎曲斷裂次數中,由於銅箔彎曲時的彎曲半徑等測定條件等不同,因而不能單純地進行比較。 As described above, in Patent Literatures 4 and 5, it is considered that the bending resistance of the rolled copper foil having the copper plating layer is deteriorated by imparting the copper plating layer in which the epitaxial growth occurs to the bending resistance of the rolled copper foil. In the number of bending fractures described in Patent Document 4 and Patent Document 5, the number of bending fractures described in the examples of the present invention and the like described later is different depending on measurement conditions such as the bending radius at the time of bending the copper foil, and thus cannot be simply Compare.

(表面處理步驟S60) (surface treatment step S60)

對通過以上步驟形成的銅鍍層的表面實施規定的處理,從而製造本實施方式有關的附有銅鍍層的壓延銅箔。 The surface of the copper plating layer formed by the above steps is subjected to a predetermined treatment to produce a rolled copper foil with a copper plating layer according to the present embodiment.

此處,作為規定的表面處理,如下所示,可以進行將例如粗化銅鍍層、膠囊銅鍍層、防銹層依次在銅鍍層上形成之類的處理。不過,也可以不進行以下說明的這些處理。 Here, as a predetermined surface treatment, for example, a treatment such as roughening a copper plating layer, a capsule copper plating layer, and a rustproof layer on the copper plating layer in this order can be performed. However, these processes described below may not be performed.

首先,對在銅鍍層上形成粗化銅鍍層的例子進行說明。 First, an example in which a roughened copper plating layer is formed on a copper plating layer will be described.

作為形成粗化銅鍍層的電鍍浴,可以使用例如硫酸銅-硫酸浴等酸性鍍銅浴。此外,也可以在酸性鍍銅浴中配合一種以上的鐵(Fe)、鉬(Mo)、鎳(Ni)、鈷(Co)、錫(Sn)、鋅(Zn)等的離子成分。 As the plating bath for forming the roughened copper plating layer, an acid copper plating bath such as a copper sulfate-sulfuric acid bath can be used. Further, one or more ionic components such as iron (Fe), molybdenum (Mo), nickel (Ni), cobalt (Co), tin (Sn), and zinc (Zn) may be blended in the acid copper plating bath.

此外,粗化鍍銅中,以銅鍍層作為基底,以極限電流密度以上的高電流密度、即形成所謂燒鍍的電流密度進行電解。不過,此時硫酸銅-硫酸浴等的液體組成、液溫、電解條件可以從較廣的範圍內選擇。通過這樣,電沉積物、析出物附著在銅鍍層上,它們進一步肥大化,從而獲得例如直徑1μm左右的粗化粒。 Further, in the rough copper plating, electrolysis is performed with a copper plating layer as a base and a high current density equal to or higher than the limiting current density, that is, a current density at which a so-called baking is formed. However, at this time, the liquid composition, liquid temperature, and electrolysis conditions of a copper sulfate-sulfuric acid bath or the like can be selected from a wide range. As a result, the electrodeposit and the precipitate adhere to the copper plating layer, and they are further enlarged to obtain, for example, coarse particles having a diameter of about 1 μm.

接著,對形成膠囊銅鍍層的例子進行說明。 Next, an example of forming a capsule copper plating layer will be described.

即,利用低於上述電鍍浴的極限電流密度的電流對粗化銅鍍層的粗化粒進行被覆電鍍,從而使粗化粒生長為瘤狀銅粒。可是,在欲使粗化粒不保持微小狀態時,也可以不形成膠囊銅鍍層。此時,硫酸銅-硫酸浴等的液體組成、液溫、電解條件可以從較廣的範圍內選擇。此外,此時也可以在電鍍浴中添加有機物添加材料。 That is, the roughened particles of the roughened copper plating layer are subjected to coating plating with a current lower than the limiting current density of the plating bath to grow the coarsened grains into the knob-shaped copper particles. However, when the roughened particles are not kept in a minute state, the capsule copper plating layer may not be formed. At this time, the liquid composition, liquid temperature, and electrolysis conditions of the copper sulfate-sulfuric acid bath or the like can be selected from a wide range. Further, at this time, an organic additive material may be added to the plating bath.

接著,對形成防銹層的例子進行說明。 Next, an example of forming a rustproof layer will be described.

防銹層也被稱為後處理鍍層,由此可獲得充分的防銹性能。首先,形成鎳鍍層或鎳合金鍍層,謀求銅的擴散抑制。接著,形成鋅鍍層或鋅合金鍍層,謀求耐熱性的提高。接著,使用3價鉻型的反應型鉻酸鹽液等形成3價鉻化處理層。之後,作為化學處理被膜,形成例如矽烷偶聯層,謀求與FPC的基材等的密合性的提高。 The rustproof layer is also referred to as a post-treatment plating layer, whereby sufficient rust prevention performance can be obtained. First, a nickel plating layer or a nickel alloy plating layer is formed to suppress the diffusion of copper. Next, a zinc plating layer or a zinc alloy plating layer is formed to improve heat resistance. Next, a trivalent chromium oxide layer is formed using a trivalent chromium type reaction type chromate solution or the like. After that, as a chemical treatment film, for example, a decane coupling layer is formed, and adhesion to a substrate of FPC or the like is improved.

通過以上操作,完成銅鍍層的表面處理。 Through the above operation, the surface treatment of the copper plating layer is completed.

(3)柔性印刷電路板的製造方法 (3) Manufacturing method of flexible printed circuit board

下面,對使用本發明一實施方式有關之附有銅鍍層的壓延銅箔的柔性 印刷電路板(FPC)的製造方法進行說明。 Next, the flexibility of using a copper-plated rolled copper foil according to an embodiment of the present invention A method of manufacturing a printed circuit board (FPC) will be described.

(再結晶退火步驟(CCL步驟)) (Recrystallization annealing step (CCL step))

首先,將本實施方式有關的附有銅鍍層的壓延銅箔截成規定的尺寸,與例如由聚醯亞胺等樹脂形成的FPC的基材貼合,從而形成CCL(覆銅層壓板(Copper Clad Laminate))。此時,可以使用通過黏接劑進行貼合,形成3層材料CCL的方法;和不通過黏接劑而直接進行貼合,形成2層材料CCL的方法中的任一種。在使用黏接劑的情況下,通過加熱處理使上述矽烷偶聯劑等黏接劑固化,從而使附有銅鍍層的壓延銅箔的具有銅鍍層和附著於銅鍍層的粗化粒等的面與基材密合而複合。在未使用黏接劑的情況下,通過加熱、加壓,使附有銅鍍層的壓延銅箔的具有銅鍍層和附著於銅鍍層的粗化粒等的面與基材直接密合。加熱溫度、時間可以配合黏接劑、基材的固化溫度等作適當選擇,例如可以設為150℃以上400℃以下的溫度且1分鐘以上120分鐘以下。 First, the rolled copper foil with a copper plating layer according to the present embodiment is cut into a predetermined size, and bonded to a substrate of an FPC made of, for example, a resin such as polyimide, to form a CCL (Copper-clad laminate (Copper) Clad Laminate)). In this case, a method of forming a three-layer material CCL by bonding with an adhesive, and a method of directly bonding the adhesive without using an adhesive to form a two-layer material CCL may be used. When an adhesive is used, the adhesive such as the above-described decane coupling agent is cured by heat treatment, and the surface of the rolled copper foil with the copper plating layer having the copper plating layer and the roughened particles attached to the copper plating layer is obtained. It is combined with the substrate to be composited. When the adhesive is not used, the surface of the rolled copper foil with the copper plating layer having the copper plating layer and the roughened particles attached to the copper plating layer is directly adhered to the substrate by heating and pressurization. The heating temperature and time may be appropriately selected in accordance with the curing temperature of the adhesive or the substrate, and may be, for example, a temperature of from 150 ° C to 400 ° C and not more than 1 minute and 120 minutes.

如上所述,附有銅鍍層的壓延銅箔所具備之壓延銅箔的耐熱性根據此時的加熱溫度進行了調整。因此,通過最終冷軋步驟S40而加工固化了的狀態的壓延銅箔通過上述加熱而軟化並在再結晶中被調質。即,在基材上貼合附有銅鍍層的壓延銅箔的CCL步驟兼作為對附有銅鍍層的壓延銅箔的壓延銅箔的再結晶退火步驟。 As described above, the heat resistance of the rolled copper foil provided in the rolled copper foil with the copper plating layer is adjusted in accordance with the heating temperature at this time. Therefore, the rolled copper foil in a state of being solidified by the final cold rolling step S40 is softened by the above heating and is tempered in recrystallization. That is, the CCL step of laminating the rolled copper foil with the copper plating layer on the substrate also serves as a recrystallization annealing step for the rolled copper foil of the rolled copper foil with the copper plating layer.

這樣,通過CCL步驟兼作為再結晶退火步驟,在直至將附有銅鍍層的壓延銅箔貼合於基材的步驟中,可以以壓延銅箔為最終冷軋步驟S40後之加工固化了的狀態,對附有銅鍍層的壓延銅箔進行處理,能夠使在將附有銅鍍層的壓延銅箔貼合於基材時的伸長、褶皺、彎折等變形難以發生。 In this way, the CCL step also serves as a recrystallization annealing step, and in the step of bonding the rolled copper foil with the copper plating layer to the substrate, the rolled copper foil can be cured in the final cold rolling step S40. The treatment of the rolled copper foil with the copper plating layer can prevent deformation such as elongation, wrinkles, and bending when the rolled copper foil with the copper plating layer is bonded to the substrate.

此外,上述那樣的壓延銅箔的軟化表示通過再結晶退火步驟,獲得調質了的壓延銅箔、即具有再結晶組織的壓延銅箔。具體而言,能夠獲得{002}面的比率提高,耐彎曲性優異的壓延銅箔。 Further, the softening of the rolled copper foil as described above means that a rolled copper foil having a recrystallized structure, that is, a rolled copper foil having a recrystallized structure is obtained by a recrystallization annealing step. Specifically, it is possible to obtain a rolled copper foil having an improved ratio of {002} plane and excellent bending resistance.

另一方面,銅鍍層不具有像壓延銅箔所具有之那樣的加工應變等再結晶的驅動力。因此,從晶體學上考慮,這樣的晶體組織難以像上述壓延銅箔那樣發生變化。即,在銅鍍層中,在整個再結晶退火步驟的前後,其晶體配向保持大體一定。此時,銅鍍層的晶體配向不是發生磊晶生長的狀態,即,不處於與軋製集合組織同等的晶體配向。通過這樣,銅鍍層不管是再 結晶退火步驟之前還是之後均具有優異的耐彎曲性。 On the other hand, the copper plating layer does not have a driving force for recrystallization such as processing strain as that of the rolled copper foil. Therefore, from the viewpoint of crystallography, such a crystal structure is difficult to change like the above-described rolled copper foil. That is, in the copper plating layer, the crystal alignment remains substantially constant before and after the entire recrystallization annealing step. At this time, the crystal alignment of the copper plating layer is not in a state in which epitaxial growth occurs, that is, it is not in the crystal alignment equivalent to the rolled aggregate structure. Through this, the copper plating is no longer Excellent bending resistance before or after the crystallization annealing step.

(表面加工步驟) (surface processing step)

接著,對貼合於基材之附有銅鍍層的壓延銅箔實施表面加工步驟。表面加工步驟中,進行下述步驟:對附有銅鍍層的壓延銅箔使用例如蝕刻等方法從而形成銅佈線等之佈線形成步驟;為了提高銅佈線與其他電子部件的連接可靠性而實施電鍍處理等表面處理的表面處理步驟;以及為了保護銅佈線等而以覆蓋銅佈線上之一部分的方式形成阻焊膜等保護膜的保護膜形成步驟。 Next, a surface processing step is performed on the rolled copper foil to which the copper plating layer is attached to the substrate. In the surface processing step, a step of forming a copper wiring or the like by a method such as etching using a copper plating layer is performed, and a plating process is performed to improve the connection reliability of the copper wiring and other electronic components. A surface treatment step of the surface treatment, and a protective film forming step of forming a protective film such as a solder resist film to cover a portion of the copper wiring in order to protect the copper wiring or the like.

通過以上操作,製造使用了本實施方式有關之附有銅鍍層的壓延銅箔的FPC。 Through the above operation, an FPC using the rolled copper foil with a copper plating layer according to the present embodiment was manufactured.

<本發明的其他實施方式> <Other Embodiments of the Invention>

以上,對本發明的實施方式進行了具體說明,但本發明不限定於上述實施方式,在不脫離其主旨的範圍內,可以進行各種變更。 The embodiment of the present invention has been specifically described above, but the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit and scope of the invention.

例如,在上述實施方式中,作為對附有銅鍍層的壓延銅箔所具備的壓延銅箔的耐熱性進行調整的添加材料,主要使用Sn、Ag等,但添加材料不限於Sn、Ag、上述代表例等所列舉的物質。此外,可以通過添加材料進行調整的各項特性不限於耐熱性,可以根據需要調整的各項特性,適當選擇添加材料。 For example, in the above-described embodiment, Sn, Ag, or the like is mainly used as an additive for adjusting the heat resistance of the rolled copper foil provided in the rolled copper foil with a copper plating layer, but the additive is not limited to Sn, Ag, and the like. Representative examples and the like. Further, the characteristics that can be adjusted by adding materials are not limited to heat resistance, and the materials to be added can be appropriately selected according to various characteristics to be adjusted.

此外,在上述實施方式中,FPC的製造步驟中的CCL步驟兼作為針對壓延銅箔的再結晶退火步驟,但再結晶退火步驟也可以作為與CCL步驟不同的步驟進行。 Further, in the above embodiment, the CCL step in the manufacturing step of the FPC also serves as a recrystallization annealing step for the rolled copper foil, but the recrystallization annealing step may be performed as a step different from the CCL step.

此外,在上述實施方式中,附有銅鍍層的壓延銅箔被用於FPC用途,但附有銅鍍層的壓延銅箔的用途不限於此,還可以用於例如鋰離子二次電池的負極集電銅箔、其他需要耐彎曲性的其他的用途。此外,關於附有銅鍍層的壓延銅箔的厚度,也可以根據以FPC用途為首的各種用途,設為10μm以下的超薄、或超過20μm等。 Further, in the above embodiment, the rolled copper foil with the copper plating layer is used for FPC use, but the use of the rolled copper foil with the copper plating layer is not limited thereto, and can also be applied to a negative electrode set such as a lithium ion secondary battery. Electric copper foil, other uses that require bending resistance. In addition, the thickness of the rolled copper foil with a copper plating layer may be ultrathin or less than 20 μm, or may be more than 20 μm, depending on various applications such as FPC use.

此外,在上述實施方式中,使銅鍍層比壓延銅箔薄,但並非限於此。即使使銅鍍層例如比壓延銅箔厚,整體上也可獲得本發明之所定效果:即提高附有銅鍍層之壓延銅箔的耐彎曲性。 Further, in the above embodiment, the copper plating layer is made thinner than the rolled copper foil, but it is not limited thereto. Even if the copper plating layer is made thicker than the rolled copper foil, for example, the effect of the present invention can be obtained as a whole: the bending resistance of the rolled copper foil with the copper plating layer is improved.

此外,在上述實施方式中,壓延銅箔採取純銅型集合組織的形態,但 並非限於此。例如在用於除了FPC用途以外的情況下等,也可以採取合金型集合組織的形態。 Further, in the above embodiment, the rolled copper foil adopts a form of a pure copper type aggregate structure, but Not limited to this. For example, in the case of use in addition to the use of FPC, it is also possible to adopt an alloy-type aggregate structure.

此外,在上述實施方式中,在銅鍍層上設有粗化銅鍍層、膠囊銅鍍層、防銹層,但這些層的組合是任意的。例如,在使粗化粒小的情況下,可以不設置膠囊銅鍍層。此外,也可以不設置粗化銅鍍層、膠囊銅鍍層,而直接在銅鍍層上設置防銹層。此外,根據應用附有銅鍍層的壓延銅箔的用途,即,在除了FPC用途以外的用途等中,也可以不先考慮與基材的密合性,還可以將銅鍍層上的構成全部省略,設為例如無粗化。 Further, in the above embodiment, the roughened copper plating layer, the capsule copper plating layer, and the rustproof layer are provided on the copper plating layer, but the combination of these layers is arbitrary. For example, in the case where the roughened particles are small, the capsule copper plating layer may not be provided. Further, instead of providing a roughened copper plating layer or a capsule copper plating layer, a rustproof layer may be directly provided on the copper plating layer. Further, depending on the application of the rolled copper foil to which the copper plating layer is applied, that is, in the use other than the use of the FPC, the adhesion to the substrate may not be considered first, and the configuration on the copper plating layer may be omitted. , for example, no coarsening.

此外,在上述實施方式中,將最終冷軋步驟S40中的總加工度設為90%以上等、壓延銅箔獲得優異的耐彎曲性,但即使將最終冷軋步驟中的總加工度設為例如小於90%,也可以與此獨立而獲得提高耐彎曲性的銅鍍層之所定效果。因此,在只要獲得某種程度的耐彎曲性即可等情況下,壓低壓延銅箔的總加工度、例如在總加工度低至小於90%或小於80%等時,可以降低製造步驟中的負荷。 Further, in the above-described embodiment, the total degree of work in the final cold rolling step S40 is set to 90% or more, and the rolled copper foil is excellent in bending resistance, but the total degree of processing in the final cold rolling step is set to For example, less than 90%, it is also possible to obtain the effect of the copper plating layer which improves the bending resistance independently of this. Therefore, the total processing degree of the low-pressure copper foil can be reduced, for example, when the total processing degree is as low as less than 90% or less than 80%, etc., as long as a certain degree of bending resistance is obtained. load.

此外,在上述實施方式中,作為銅鍍層不形成壓延銅箔的晶體結構的附有銅鍍層的壓延銅箔的製造方法,在使用了SPS、MPS等添加劑的電鍍等中發現了作為磊晶生長抑制劑(非磊晶劑)的規定的效果。可是,使用該SPS、MPS其本身並非發明的本質,除此以外,也可以使用具有作為非磊晶劑起作用的其他添加劑。這樣,就可以充分獲得本發明的效果。 Further, in the above-described embodiment, the method for producing a copper plated rolled copper foil having a crystal structure in which a copper plating layer does not form a rolled copper foil is found in epitaxial growth in plating or the like using an additive such as SPS or MPS. The prescribed effect of the inhibitor (non-extraction agent). However, the use of the SPS and MPS is not the essence of the invention itself, and other additives having a function as a non-plating agent can also be used. Thus, the effects of the present invention can be sufficiently obtained.

終究,本發明的要點在於以下兩點:附有銅鍍層的壓延銅箔的銅鍍層未發生磊晶生長且未成為與壓延銅箔同樣的晶體結構,以及由此銅鍍層獲得優異的耐彎曲性。 After all, the gist of the present invention lies in the following two points: the copper plating layer of the rolled copper foil with the copper plating layer does not undergo epitaxial growth and does not have the same crystal structure as the rolled copper foil, and thus the copper plating layer obtains excellent bending resistance. .

這裏,為了實現本發明的效果,並不一定需要上述所列舉的全部步驟。上述實施方式及後述實施例所列舉的各種條件也始終為例示,可以適當變更。 Here, in order to achieve the effects of the present invention, all of the steps listed above are not necessarily required. The various conditions exemplified in the above embodiment and the examples to be described later are also exemplified, and can be appropriately changed.

【實施例】 [Examples]

下面,對本發明有關的實施例與比較例一起進行說明。 Hereinafter, examples related to the present invention will be described together with comparative examples.

(1)附有銅鍍層的壓延銅箔的製作 (1) Production of rolled copper foil with copper plating

以下對實施例1~32和比較例1~16有關之附有銅鍍層的壓延銅箔的製作步驟進行說明。 Hereinafter, the steps of producing the copper-plated rolled copper foil according to Examples 1 to 32 and Comparative Examples 1 to 16 will be described.

(壓延銅箔的製作) (Production of rolled copper foil)

首先製作壓延銅箔。所用的原材料有4種:純度為99.9%的韌銅、純度為99.99%的無氧銅、添加量控制在180ppm~220ppm的範圍內之添加有Ag的純度為99.9%的韌銅、添加量控制在30ppm~90ppm的範圍內的添加有Sn的純度為99.99%的無氧銅。通過與上述實施方式同樣的步驟和方法,由這些鑄塊得到壓延銅箔。此時,對於實施例和比較例兩者,均製作厚度為8.0μm、11.0μm、16.5μm、17.0μm的壓延銅箔。此外,此時實施例和比較例中的各種製作條件設為一致。 First, a rolled copper foil is produced. There are four kinds of raw materials used: toughness copper with a purity of 99.9%, oxygen-free copper with a purity of 99.99%, toughness with a purity of 99.9% added with an added amount controlled in the range of 180 ppm to 220 ppm, and addition amount control Oxygen-free copper having a purity of Sn of 99.99% added in the range of 30 ppm to 90 ppm. The rolled copper foil was obtained from these ingots by the same steps and methods as those of the above embodiment. At this time, a rolled copper foil having a thickness of 8.0 μm, 11.0 μm, 16.5 μm, and 17.0 μm was produced for both the examples and the comparative examples. Further, at this time, various production conditions in the examples and the comparative examples were set to match.

此時,將熱軋步驟中得到的厚度8mm的板材在中間退火步驟中,根據各自的銅材質、銅條的厚度,以約600℃~800℃的溫度保持30秒~2分鐘。此外,坯料退火步驟中,也根據各自的銅材質、坯料材料的厚度,以約500~750℃的溫度將坯料保持約30秒~2分鐘。這樣,例如即使材質相同,由於耐熱性會根據銅材的厚度的不同而變化,因此可以使溫度隨著厚度變薄而降低。 At this time, the plate material having a thickness of 8 mm obtained in the hot rolling step is held at a temperature of about 600 ° C to 800 ° C for 30 seconds to 2 minutes in accordance with the thickness of each of the copper material and the copper strip in the intermediate annealing step. Further, in the billet annealing step, the billet is held at a temperature of about 500 to 750 ° C for about 30 seconds to 2 minutes depending on the thickness of each of the copper material and the billet material. Thus, for example, even if the materials are the same, since the heat resistance changes depending on the thickness of the copper material, the temperature can be lowered as the thickness becomes thinner.

此外,將對應於最終冷軋步驟中的材質和最終得到的壓延銅箔的厚度t的總加工度示於下方。 Further, the total degree of processing corresponding to the material in the final cold rolling step and the thickness t of the finally obtained rolled copper foil is shown below.

●使用了韌銅的壓延銅箔:總加工度90.0%~91.8% ● Calendered copper foil using tough copper: total processing degree 90.0%~91.8%

.t8.0μm:t80μm→(90.0%)→t8.0μm . T8.0μm: t80μm→(90.0%)→t8.0μm

.t11.0μm:t125μm→(91.2%)→t11.0μm . T11.0μm: t125μm→(91.2%)→t11.0μm

.t16.5μm:t200μm→(91.8%)→t16.5μm . T16.5μm: t200μm→(91.8%)→t16.5μm

.t17.0μm:t200μm→(91.5%)→t17.0μm . T17.0μm: t200μm→(91.5%)→t17.0μm

●使用了無氧銅的壓延銅箔:總加工度94.3%~94.6% ●Used copper foil with oxygen-free copper: total processing degree 94.3%~94.6%

.t8.0μm:t140μm→(94.3%)→t8.0μm . T8.0μm: t140μm→(94.3%)→t8.0μm

.t11.0μm:t200μm→(94.5%)→t11.0μm . T11.0μm: t200μm→(94.5%)→t11.0μm

.t16.5μm:t300μm→(94.5%)→t16.5μm . T16.5μm: t300μm→(94.5%)→t16.5μm

.t17.0μm:t315μm→(94.6%)→t17.0μm . T17.0μm: t315μm→(94.6%)→t17.0μm

●使用了添加有Ag的韌銅的壓延銅箔:總加工度96.9%~97.8% ●Used rolled copper foil with tough pitch copper added with Ag: total processing degree 96.9%~97.8%

.t8.0μm:t360μm→(97.8%)→t8.0μm . T8.0μm: t360μm→(97.8%)→t8.0μm

.t11.0μm:t400μm→(97.3%)→t11.0μm . T11.0μm: t400μm→(97.3%)→t11.0μm

.t16.5μm:t550μm→(97.0%)→t16.5μm . T16.5μm: t550μm→(97.0%)→t16.5μm

.t17.0μm:t550μm→(96.9%)→t17.0μm . T17.0μm: t550μm→(96.9%)→t17.0μm

●使用了添加有Sn的無氧銅的壓延銅箔:總加工度96.9%~97.8% ●Used copper foil with oxygen-free copper added with Sn: total processing degree 96.9%~97.8%

.t8.0μm:t360μm→(97.8%)→t8.0μm . T8.0μm: t360μm→(97.8%)→t8.0μm

.t11.0μm:t400μm→(97.3%)→t11.0μm . T11.0μm: t400μm→(97.3%)→t11.0μm

.t16.5μm:t550μm→(97.0%)→t16.5μm . T16.5μm: t550μm→(97.0%)→t16.5μm

.t17.0μm:t550μm→(96.9%)→t17.0μm . T17.0μm: t550μm→(96.9%)→t17.0μm

(附有銅鍍層的壓延銅箔的製作) (Production of rolled copper foil with copper plating)

下面,對如上所述得到的壓延銅箔實施鍍銅,製作附有銅鍍層的壓延銅箔。 Next, the rolled copper foil obtained as described above was subjected to copper plating to prepare a rolled copper foil with a copper plating layer.

首先,在對壓延銅箔的表面進行清潔化的電解脫脂中,在含有氫氧化鈉40g/L、碳酸鈉20g/L的水溶液中,在液溫40℃、電流密度10A/dm2的條件下進行10秒處理。 First, in the electrolytic degreasing which cleans the surface of the rolled copper foil, in an aqueous solution containing 40 g/L of sodium hydroxide and 20 g/L of sodium carbonate, at a liquid temperature of 40 ° C and a current density of 10 A/dm 2 Perform 10 seconds of processing.

在中和壓延銅箔的表面殘留的鹼性溶液並除去銅的氧化膜的酸洗處理中,在含有硫酸150g/L的水溶液中,在液溫25℃的條件下浸漬10秒。 In the pickling treatment of neutralizing the alkaline solution remaining on the surface of the rolled copper foil and removing the copper oxide film, it was immersed in an aqueous solution containing 150 g/L of sulfuric acid at a liquid temperature of 25 ° C for 10 seconds.

實施以壓延銅箔作為陰極的電解處理,分別形成銅鍍層:對於8.0μm的壓延銅箔形成厚度0.1μm的銅鍍層;對於厚度11.0μm的壓延銅箔形成厚度0.4μm的銅鍍層;對於厚度16.5μm的壓延銅箔形成厚度0.7μm的銅鍍層;對於厚度17.0μm的壓延銅箔形成厚度1.0μm的銅鍍層。在增減壓延銅箔的厚度的同時增減銅鍍層的厚度是出於量產性、生產成本的觀點,其本身並不左右本實施例的效果。 Electrolytic treatment using a rolled copper foil as a cathode was performed to form a copper plating layer: a copper plating layer having a thickness of 0.1 μm was formed for a rolled copper foil of 8.0 μm; a copper plating layer having a thickness of 0.4 μm was formed for a rolled copper foil having a thickness of 11.0 μm; for a thickness of 16.5 The rolled copper foil of μm was formed into a copper plating layer having a thickness of 0.7 μm; and the rolled copper foil having a thickness of 17.0 μm was formed into a copper plating layer having a thickness of 1.0 μm. The increase or decrease of the thickness of the copper plating layer while increasing the thickness of the copper-deposited copper foil is in view of mass productivity and production cost, and does not affect the effect of the present embodiment itself.

此時,在實施例1~32和一部分比較例中,改變電鍍液中添加的SPS的添加量。此外,在一部分比較例中,未進行SPS的添加。以下的表2顯示鍍銅中的詳細條件。 At this time, in Examples 1 to 32 and some of the comparative examples, the amount of SPS added to the plating solution was changed. Further, in some of the comparative examples, the addition of SPS was not performed. Table 2 below shows the detailed conditions in copper plating.

【表2】 【Table 2】

在表2的條件下,實施例和比較例中均獲得具有同等程度的平坦性的銅鍍層。銅鍍層的表面粗糙度以十點平均粗糙度Rzjis(JIS B0601:2001)計為0.4μm~0.7μm。 Under the conditions of Table 2, copper plating layers having the same degree of flatness were obtained in both the examples and the comparative examples. The surface roughness of the copper plating layer was 0.4 μm to 0.7 μm in terms of ten-point average roughness Rzjis (JIS B0601:2001).

通過以上操作,得到壓延銅箔使用韌銅的實施例1~8和比較例1~4、壓延銅箔使用無氧銅的實施例9~16和比較例5~8、壓延銅箔使用添加有Ag的韌銅的實施例17~24和比較例9~12、壓延銅箔使用添加有Sn的無氧銅的實施例25~32和比較例13~16有關的附有銅鍍層的壓延銅箔。 Through the above operations, Examples 1 to 8 and Comparative Examples 1 to 4 in which the rolled copper foil was made of tough copper, Examples 9 to 16 and Comparative Examples 5 to 8 in which the rolled copper foil was made of oxygen-free copper, and the rolled copper foil were added. Examples 17 to 24 and Comparative Examples 9 to 12 of the tough pitch copper of Ag, and the copper-plated rolled copper foils of Examples 25 to 32 and Comparative Examples 13 to 16 in which the copper-free copper was added with Sn-free oxygen-free copper. .

(2)按照2θ/θ法進行的X射線繞射 (2) X-ray diffraction according to the 2θ/θ method

對於上述那樣得到的實施例和比較例有關之附有銅鍍層的壓延銅箔的銅鍍層、壓延銅箔,利用X射線繞射裝置對晶體配向進行測定。關於壓延銅箔的晶體配向,以形成銅鍍層前的狀態進行測定。作為X射線繞射裝置,使用株式會社理學制的X射線繞射裝置(型號:Ultima IV)。表3匯總顯示測定條件。 The copper plating layer and the rolled copper foil of the rolled copper foil with a copper plating layer which were obtained in the above-mentioned Example and the comparative example were measured by the X-ray diffraction apparatus. The crystal alignment of the rolled copper foil was measured in a state before the copper plating layer was formed. As the X-ray diffraction device, an X-ray diffraction device (model: Ultima IV) manufactured by Rigaku Corporation was used. Table 3 summarizes the measurement conditions.

在測定銅鍍層的晶體配向時,根據銅鍍層的厚度,適當變更X射線的輸出功率、狹縫等。具體而言,銅鍍層變得越薄,使輸出功率越小,並且,使狹縫寬度和狹縫角度越小。這裏,作為本發明有關的{111}面、{002}面、{022}面的測定角度(2θ)的範圍,雖然40°~80°是充分的,但測定是在40°~140°間進行的。通過這樣,獲得作為2θ與80°相比為高角度側的結晶面的{113}面、{133}面、{024}面的資訊作為參考。通過高角度側的測定,確認到該{113}面、{133}面、{024}面的繞射峰強度極小。由此,確認到這些結晶面對耐彎曲性幾乎沒有影響,即使不考慮也可以。 When the crystal alignment of the copper plating layer is measured, the X-ray output power, the slit, and the like are appropriately changed depending on the thickness of the copper plating layer. Specifically, the thinner the copper plating layer is, the smaller the output power is, and the smaller the slit width and the slit angle are. Here, the range of the measurement angle (2θ) of the {111} plane, the {002} plane, and the {022} plane according to the present invention is sufficient although 40° to 80°, but the measurement is between 40° and 140°. ongoing. In this way, information on the {113} plane, the {133} plane, and the {024} plane of the crystal plane on the high angle side of 2θ and 80° is obtained as a reference. It was confirmed by the measurement on the high angle side that the diffraction peak intensity of the {113} plane, the {133} plane, and the {024} plane was extremely small. From this, it was confirmed that these crystals hardly affected the bending resistance, and it was not considered.

首先,將上述原材料、總加工度等不同的4種壓延銅箔中的代表例的測定結果示於以下的表4和第2圖~第5圖。所謂4種壓延銅箔,即,使用了韌銅的壓延銅箔、使用了無氧銅的壓延銅箔、使用了添加有Ag的韌銅的壓延銅箔、使用了添加有Sn的無氧銅的壓延銅箔。壓延銅箔的製作條件在實施例和比較例中設為共同通用,全部實施例和比較例的測定結果均具體實現在這4種代表例中。 First, the measurement results of representative examples of the four types of rolled copper foils having different materials and total workability are shown in Table 4 below and FIGS. 2 to 5 . Four types of rolled copper foils, that is, rolled copper foil using tough pitch copper, rolled copper foil using oxygen-free copper, rolled copper foil using tough pitch copper added with Ag, and oxygen-free copper to which Sn is added Rolled copper foil. The production conditions of the rolled copper foil were collectively used in the examples and the comparative examples, and the measurement results of all the examples and the comparative examples were specifically realized in the four representative examples.

【表4】 【Table 4】

此外,將實施例1~32和比較例1~16所具備的銅鍍層的測定結果示於以下的表5~表8和第6圖~第17圖。即,表5是壓延銅箔使用韌銅的實施例1~8和比較例1~4的結果。此外,表6是壓延銅箔使用無氧銅的實施例9~16和比較例5~8的結果。此外,表7是壓延銅箔使用添加有Ag的韌銅的實施例17~24和比較例9~12的結果。此外,表8是壓延銅箔使用添加有Sn的無氧銅的實施例25~32和比較例13~16的結果。各表中,作為“式(1)~(6)有關的要件”,在滿足式(1),並且,滿足式(2)、(3)或(4)、(5)或(6)中的至少任一狀態的情況下,記為“滿足”。此外,在符合下述情況中的至少一個的情況下,記為“不滿足”:不滿足式(1)的情況、或者也不滿足式(2)、(3)或(4)、(5)或(6)中的至少任一狀態的情況。 Further, the measurement results of the copper plating layers provided in Examples 1 to 32 and Comparative Examples 1 to 16 are shown in Tables 5 to 8 and Figs. 6 to 17 below. That is, Table 5 shows the results of Examples 1 to 8 and Comparative Examples 1 to 4 in which the rolled copper foil was made of tough pitch copper. Further, Table 6 shows the results of Examples 9 to 16 and Comparative Examples 5 to 8 in which the rolled copper foil was made of oxygen-free copper. Further, Table 7 shows the results of Examples 17 to 24 and Comparative Examples 9 to 12 in which the rolled copper foil was made of tough pitch copper to which Ag was added. Further, Table 8 shows the results of Examples 25 to 32 and Comparative Examples 13 to 16 in which the rolled copper foil was made of oxygen-free copper to which Sn was added. In each table, as "the requirements related to the formulas (1) to (6)", the formula (1) is satisfied, and the formula (2), (3) or (4), (5) or (6) is satisfied. In the case of at least one of the states, it is referred to as "satisfaction". Further, in the case where at least one of the following cases is satisfied, it is referred to as "not satisfied": the case where the formula (1) is not satisfied, or the formula (2), (3) or (4), (5) is not satisfied. Or at least one of the states of (6).

根據表5~表8,實施例中的4種銅材質的壓延銅箔與其材質無關、此 外也與厚度無關,均滿足式(1)。進一步滿足式(2)、(3)或(4)、(5)或(6)中的至少任一狀態。 According to Tables 5 to 8, the four kinds of copper-based rolled copper foils in the examples are independent of their materials. It is also independent of the thickness and satisfies the formula (1). Further, at least any one of the formulas (2), (3) or (4), (5) or (6) is satisfied.

此外,另一方面,鍍銅時SPS的添加量少或未添加的比較例中的4種銅材質的壓延銅箔與其材質無關、此外也與厚度無關,均在式(1)的範圍之外。進一步,在式(2)~式(5)中也都在規定範圍之外。這裏,由這些比較例的測定結果可知,上述式(1)中的要件(≧15.0)是具有相當的餘裕的值。因此可以說,單就式(1)觀之,根據銅鍍層是否滿足式(1),是否為與壓延銅箔同樣的晶體結構就相當清楚了。 On the other hand, in the comparative example in which the amount of SPS added during copper plating is small or the copper-clad rolled copper foil in the comparative example which is not added, the material is not related to the material, and is also outside the range of the formula (1) regardless of the thickness. . Further, in the formulas (2) to (5), they are also outside the predetermined range. Here, as is clear from the measurement results of these comparative examples, the requirement (≧15.0) in the above formula (1) is a value having a considerable margin. Therefore, it can be said that it is clear from the equation (1) whether or not the copper plating layer satisfies the formula (1), and whether it is the same crystal structure as the rolled copper foil.

(3)彎曲疲勞壽命試驗 (3) Bending fatigue life test

接著,為了對各壓延銅箔和各附有銅鍍層的壓延銅箔的耐彎曲性進行研究,進行彎曲疲勞壽命試驗,即測定各壓延銅箔和各附有銅鍍層的壓延銅箔直至斷裂的反復彎曲次數(彎曲斷裂次數)。該實驗使用信越工程股份有限公司製的FPC高速彎曲試驗機(型號SEK-31B2S)按照IPC(美國印刷電路協會)標準進行。第18圖顯示包括這樣的FPC高速彎曲試驗機等的一般的滑動彎曲試驗裝置10的示意圖。 Next, in order to investigate the bending resistance of each of the rolled copper foil and the rolled copper foil with the copper plating layer, a bending fatigue life test was performed, that is, each rolled copper foil and each rolled copper foil with a copper plating layer were measured until it was broken. The number of times of repeated bending (the number of bending breaks). This experiment was carried out in accordance with the IPC (American Printed Circuits Association) standard using an FPC high-speed bending tester (model SEK-31B2S) manufactured by Shin-Etsu Engineering Co., Ltd. Fig. 18 is a view showing a general sliding bending test apparatus 10 including such an FPC high-speed bending tester.

首先,對於將各附有銅鍍層的壓延銅箔和沒有銅鍍層的各壓延銅箔切成寬度12.5mm、長度220mm(在軋製方向上220mm)的試樣片50,仿照上述再結晶退火步驟,在300℃、實施5分鐘的再結晶退火。所述條件模仿柔性印刷電路板的CCL步驟中與基材密合時壓延銅箔實際承受的熱量的一個例子。 First, each of the rolled copper foil with the copper plating layer and the rolled copper foil without the copper plating layer was cut into a sample piece 50 having a width of 12.5 mm and a length of 220 mm (220 mm in the rolling direction), following the recrystallization annealing step described above. Recrystallization annealing was performed at 300 ° C for 5 minutes. The conditions mimic an example of the amount of heat actually experienced by the rolled copper foil when it is in close contact with the substrate in the CCL step of the flexible printed circuit board.

接著,如第18圖所示,將試樣片50用螺絲12固定於滑動彎曲試驗裝置10的試樣固定板11。接著,使試樣片50接觸振動傳輸部13並黏貼,利用振盪驅動體14使振動傳輸部13在上下方向上振動,從而使振動傳輸至試樣片50,實施彎曲疲勞壽命試驗。作為彎曲疲勞壽命的測定條件,將彎曲半徑10r設為1.5mm,將衝程10s設為10mm,將頻率設為25Hz。在該條件下,對各試樣片50各3塊進行測定,對直至發生斷裂的次數(彎曲斷裂次數)的平均值進行比較。 Next, as shown in Fig. 18, the sample piece 50 is fixed to the sample fixing plate 11 of the sliding bending test apparatus 10 by screws 12. Then, the sample piece 50 is brought into contact with the vibration transmitting portion 13 and adhered, and the vibration transmitting unit 13 is vibrated in the vertical direction by the oscillation driving body 14, and the vibration is transmitted to the sample piece 50 to carry out a bending fatigue life test. As the measurement conditions of the bending fatigue life, the bending radius 10r was set to 1.5 mm, the stroke 10 s was set to 10 mm, and the frequency was set to 25 Hz. Under these conditions, three pieces of each of the sample pieces 50 were measured, and the average value of the number of times of occurrence of the fracture (the number of bending fractures) was compared.

由通過這樣得到的測定結果,將上述原材料、總加工度等不同的4種壓延銅箔的單體的測定結果示於以下的表9。表9中的彎曲斷裂次數的數值是每種各3塊的測定結果的平均值。 From the measurement results thus obtained, the measurement results of the monomers of the four kinds of rolled copper foils having different materials and total workability are shown in Table 9 below. The numerical value of the number of bending fractures in Table 9 is the average value of the measurement results of each of the three blocks.

4種壓延銅箔各自最終冷軋步驟的總加工度為90%以上;作為更佳的條件,為94%以上;作為進一步較佳的條件,為96%以上。因此可知,根據總加工度的高度,各自成為具有優異的耐彎曲性的壓延銅箔。 The total degree of processing of each of the four types of rolled copper foils in the final cold rolling step is 90% or more; as a more preferable condition, it is 94% or more; and as a further preferable condition, it is 96% or more. Therefore, it is understood that each of them has a rolled copper foil having excellent bending resistance depending on the height of the total workability.

此外,對於各附有銅鍍層的壓延銅箔,將得到的測定結果示於以下的表10~表13。即,表10是壓延銅箔使用韌銅的實施例1~8和比較例1~4的結果。此外,表11是壓延銅箔使用無氧銅的實施例9~16和比較例5~8的結果。此外,表12是壓延銅箔使用添加有Ag的韌銅的實施例17~24和比較例9~12的結果。此外,表13是壓延銅箔使用添加有Sn的無氧銅的實施例25~32和比較例13~16的結果。這裏,各表中的彎曲斷裂次數的數值是每種各3塊的測定結果的平均值。此外,各表的右端顯示相對於壓延銅箔單體的彎曲斷裂次數的各附有銅鍍層的壓延銅箔的彎曲斷裂次數的下降率。 Further, the measurement results obtained for each of the rolled copper foils with the copper plating layers are shown in Tables 10 to 13 below. That is, Table 10 shows the results of Examples 1 to 8 and Comparative Examples 1 to 4 in which the rolled copper foil was made of tough pitch copper. Further, Table 11 shows the results of Examples 9 to 16 and Comparative Examples 5 to 8 in which the rolled copper foil was made of oxygen-free copper. Further, Table 12 shows the results of Examples 17 to 24 and Comparative Examples 9 to 12 in which the rolled copper foil was made of tough pitch copper to which Ag was added. Further, Table 13 shows the results of Examples 25 to 32 and Comparative Examples 13 to 16 in which the rolled copper foil was made of oxygen-free copper to which Sn was added. Here, the numerical value of the number of bending fractures in each table is the average value of the measurement results of each of the three blocks. Further, the right end of each watch shows the rate of decrease in the number of bending fractures of each of the rolled copper foils with the copper plating layer relative to the number of bending fractures of the rolled copper foil.

此處,各表中混合存在厚度不同之附有銅鍍層的壓延銅箔的測定值。附有銅鍍層的壓延銅箔的厚度對直至斷裂的彎曲斷裂次數、即因對耐彎曲性產生影響,因此需要留意。即,如果材料大體相同,那麼一般而言,厚度越厚則直至斷裂的彎曲斷裂次數越少。因此,各表所示的各附有銅鍍層的壓延銅箔中,整體的厚度(總厚度)、壓延銅箔單體的厚度越厚則耐彎曲性越低。這裏,層厚相對於壓延銅箔薄的銅鍍層的厚度本身並沒有那麼大 的影響。 Here, the measured values of the rolled copper foil with a copper plating layer having different thicknesses were mixed in each table. The thickness of the rolled copper foil with the copper plating is affected by the number of bending fractures until the fracture, that is, the bending resistance, and therefore it is necessary to pay attention. That is, if the materials are substantially the same, in general, the thicker the thickness, the less the number of bending breaks until breaking. Therefore, in the rolled copper foil with the copper plating layer shown in each table, the thicker the total thickness (total thickness) and the thickness of the rolled copper foil alone, the lower the bending resistance. Here, the thickness of the copper plating layer having a layer thickness thinner than that of the rolled copper foil is not so large in itself. Impact.

壓延銅箔使用4種銅材質的實施例1~32中,附有銅鍍層的壓延銅箔作為整體的耐彎曲性均比與之對應的比較例大幅改善。此外,從對應於4種銅材質的壓延銅箔的附有銅鍍層的壓延銅箔的耐彎曲性的改善程度(水準)觀之,不取決於壓延銅箔的銅材質、耐彎曲性,銅鍍層越薄越好。 In Examples 1 to 32 in which the copper foil was used for the rolled copper foil, the rolled copper foil with the copper plating layer as a whole was significantly improved in bending resistance as compared with the comparative example corresponding thereto. In addition, the degree of improvement in bending resistance of the rolled copper foil with copper plating corresponding to the rolled copper foil of four kinds of copper materials does not depend on the copper material of the rolled copper foil, bending resistance, and copper. The thinner the plating, the better.

以下的表14中,將實施例1~32和比較例1~16的這些測定結果按照銅鍍層和壓延銅箔的厚度匯總顯示。此外,第19圖中,分別對於實施例1~32有關的4種銅材質的壓延銅箔,用圖表表示厚度與彎曲斷裂次數的關係。圖表的橫軸是壓延銅箔的厚度(μm),縱軸是彎曲斷裂次數(次)。此外,圖表上的△記號是壓延銅箔使用韌銅的例子。此外,□記號是壓延銅箔使用無氧銅的例子。此外,◆記號是壓延銅箔使用添加有Ag的韌銅的例子。此外,○記號是壓延銅箔使用添加有Sn的無氧銅的例子。 In Table 14 below, the measurement results of Examples 1 to 32 and Comparative Examples 1 to 16 were collectively shown in accordance with the thicknesses of the copper plating layer and the rolled copper foil. Further, in Fig. 19, the relationship between the thickness and the number of bending fractures is shown graphically for the four types of rolled copper foils of the copper materials according to Examples 1 to 32, respectively. The horizontal axis of the graph is the thickness (μm) of the rolled copper foil, and the vertical axis is the number of bending fractures (times). Further, the Δ mark on the graph is an example in which tough copper is used for the rolled copper foil. Further, the □ mark is an example in which oxygen-free copper is used for the rolled copper foil. Further, the ◆ mark is an example in which the rolled copper foil is made of tough pitch copper to which Ag is added. Further, the ○ mark is an example in which the rolled copper foil is made of oxygen-free copper to which Sn is added.

根據表14,相對於壓延銅箔單體的彎曲斷裂次數,附有銅鍍層的壓延銅箔的彎曲斷裂次數的下降率在任一厚度中均為實施例比比較例少。 According to Table 14, the rate of decrease in the number of bending fractures of the rolled copper foil with the copper plating layer was less than that of the comparative example in any thickness with respect to the number of bending fractures of the rolled copper foil alone.

此外,如由第19圖明確可知,一般而言,從銅材質之間觀之厚度越厚則彎曲斷裂次數越低。此處,實施例和比較例有關之附有銅鍍層的壓延銅箔不管銅鍍層的晶體結構、特性如何,僅由賦予銅鍍層厚度的增大而對彎曲斷裂次數有影響。即,即使在期望的銅鍍層中,與壓延銅箔單體的情況相比,彎曲斷裂次數也必然減少。 Further, as is clear from Fig. 19, in general, the thicker the thickness between the copper materials, the lower the number of bending fractures. Here, the rolled copper foil with the copper plating layer according to the examples and the comparative examples has an influence on the number of bending fractures only by the increase in the thickness of the copper plating layer regardless of the crystal structure and characteristics of the copper plating layer. That is, even in the desired copper plating layer, the number of bending fractures is inevitably reduced as compared with the case of rolling the copper foil alone.

基於此種情況,從實施例的測定結果觀之,實施例有關的附有銅鍍層的壓延銅箔相對於壓延銅箔單體的彎曲斷裂次數的下降率都很小,可以認為幾乎僅受到厚度增加部分的影響。即,可以認為幾乎不產生由銅鍍層的 晶體結構等造成的不良影響。 Based on the measurement results of the examples, the rate of decrease in the number of times of bending of the rolled copper foil with respect to the rolled copper foil with respect to the rolled copper foil of the embodiment is small, and it can be considered that the thickness is almost only affected by the thickness. Increase the impact of the part. That is, it can be considered that almost no copper plating is produced. Adverse effects caused by crystal structure, etc.

另一方面,從SPS的添加量少或未添加的比較例的測定結果觀之,相對於壓延銅箔單體的彎曲斷裂次數的下降率都非常大,表示產生厚度增加部分的影響以外的影響、即由銅鍍層的晶體結構等造成的不良影響。 On the other hand, from the measurement results of the comparative examples in which the amount of SPS added is small or not added, the rate of decrease in the number of bending fractures of the rolled copper foil alone is extremely large, and the influence other than the influence of the thickness increase portion is shown. That is, the adverse effect caused by the crystal structure of the copper plating layer or the like.

如上所述可知,通過對於最終冷軋步驟後、再結晶退火步驟前的壓延銅箔形成與採取發生磊晶生長的晶體配向不同的配向、即形成未採取與軋製集合組織同等的晶體配向的銅鍍層,可以提高附有銅鍍層的壓延銅箔的耐彎曲性。 As described above, it is understood that the formation of the rolled copper foil after the final cold rolling step and before the recrystallization annealing step is different from the alignment of the crystal in which the epitaxial growth occurs, that is, the crystal alignment which is not equivalent to the rolled aggregate structure is formed. The copper plating layer can improve the bending resistance of the rolled copper foil with the copper plating.

此外,認為在獲得這樣的銅鍍層時所用的SPS的添加量中,存在較佳的範圍。至少在本實施例的範圍內,在每1升電鍍液的SPS添加量為20mg~150mg時,可以確認到充分的效果,在該範圍內沒有發現效果的差異。此外,在SPS為10mg以下時,完全未確認到本發明的效果。因此,可以認為在超過10mg至小於20mg的範圍內,存在表現本發明的效果的要點。此外,推測即使在SPS超過150mg的情況下,也可以繼續獲得本發明的效果。可是,從量產性、添加劑產生的成本的觀點出發,對於添加多於150mg的SPS,未確認到優點。 Further, it is considered that there is a preferable range among the added amount of SPS used in obtaining such a copper plating layer. At least in the range of the present embodiment, when the amount of SPS added per liter of the plating solution is 20 mg to 150 mg, a sufficient effect can be confirmed, and no difference in effect is observed in the range. Further, when the SPS was 10 mg or less, the effects of the present invention were not confirmed at all. Therefore, it is considered that in the range of more than 10 mg to less than 20 mg, there is a point that the effect of the present invention is exhibited. Further, it is presumed that the effect of the present invention can be continuously obtained even in the case where the SPS exceeds 150 mg. However, from the viewpoint of the mass production property and the cost of the additive, no advantage has been confirmed for the addition of more than 150 mg of SPS.

綜上所述,作為每1升電鍍液的SPS量的下限值,可以設為效果明確的20mg。此外,作為每1升電鍍液的SPS量的上限值,可以設為150mg。 As described above, the lower limit of the amount of SPS per one liter of plating solution can be set to 20 mg with a clear effect. Further, the upper limit of the amount of SPS per 1 liter of plating solution may be 150 mg.

這裏,如上所述,壓延銅箔與形成於其上的銅鍍層的組合也可以不是本實施例所示的組合。例如,可以在厚度8.0μm的壓延銅箔上賦予厚度1.0μm的銅鍍層,也可以在厚度17.0μm的壓延銅箔上賦予厚度0.1μm的銅鍍層。在這樣的構成中,也可以獲得如上述的本發明的效果。 Here, as described above, the combination of the rolled copper foil and the copper plating layer formed thereon may not be the combination shown in this embodiment. For example, a copper plating layer having a thickness of 1.0 μm may be applied to a rolled copper foil having a thickness of 8.0 μm, or a copper plating layer having a thickness of 0.1 μm may be applied to a rolled copper foil having a thickness of 17.0 μm. In such a configuration, the effects of the present invention as described above can also be obtained.

S10‧‧‧鑄塊的準備步驟 S10‧‧‧Ingot preparation steps

S20‧‧‧熱軋步驟 S20‧‧‧ hot rolling step

S30‧‧‧重複步驟 S30‧‧‧ Repeat steps

S31‧‧‧冷軋步驟 S31‧‧‧ cold rolling step

S32‧‧‧退火步驟 S32‧‧‧ Annealing step

S40‧‧‧最終冷軋步驟 S40‧‧‧ final cold rolling step

S50‧‧‧銅鍍層形成步驟 S50‧‧‧ copper plating formation steps

S60‧‧‧表面處理步驟 S60‧‧‧ Surface treatment steps

Claims (5)

一種附有銅鍍層的壓延銅箔,其特徵在於,具備:主表面或背面具有平行之多個結晶面的最終冷軋步驟後、再結晶退火步驟前的壓延銅箔;以及形成於所述壓延銅箔的主表面或其背面中的至少一側的面上、且在主表面或在成為所述壓延銅箔的介面的背面具有平行的多個結晶面的銅鍍層,在所述壓延銅箔的所述多個結晶面中,將由對{111}面、{002}面、{022}面按照2θ/θ法進行的X射線繞射所獲得的繞射峰的強度值各自設為IR{111}、IR{002}、IR{022}、將各所述繞射峰的強度值的分率PR{111}、PR{002}、PR{022}設為:PR{111}=[IR{111}/(IR{111}+IR{002}+IR{022})]×100、PR{002}=[IR{002}/(IR{111}+IR{002}+IR{022})]×100、PR{022}=[IR{022}/(IR{111}+IR{002}+IR{022})]×100,在所述銅鍍層的所述多個結晶面中,將由對{111}面、{002}面、{022}面按照2θ/θ法進行的X射線繞射所獲得的繞射峰的強度值各自設為IM{111}、IM{002}、IM{022}、將各所述繞射峰的強度值的分率PM{111}、PM{002}、PM{022}設為:PM{111}=[IM{111}/(IM{111}+IM{002}+IM{022})]×100、PM{002}=[IM{002}/(IM{111}+IM{002}+IM{022})]×100、PM{022}=[IM{022}/(IM{111}+IM{002}+IM{022})]×100時,成為下述狀態中的至少任一狀態:滿足以下的式(1)PM{111}≧15.0…(1),進一步滿足以下的式(2)PM{111}>(PR{111}+5)…(2)的狀態;滿足以下的式(3)、(4)PM{002}<(PR{002}-10)…(3), PM{002}>(PR{002}+10)…(4)中的任一個的狀態;滿足以下的式(5)、(6)PM{022}<(PR{022}-10)…(5),PM{022}>(PR{022}+10)…(6)中的任一個的狀態。 A rolled copper foil with a copper plating layer, comprising: a rolled copper foil after a final cold rolling step having a plurality of parallel crystal faces on a main surface or a back surface, and a recrystallization annealing step; and forming the calender a copper plating layer having a plurality of parallel crystal faces on a main surface or a surface on at least one side of the main surface of the copper foil or the back surface thereof, on the main surface or the back surface of the interface of the rolled copper foil, in the rolled copper foil Among the plurality of crystal faces, the intensity values of the diffraction peaks obtained by X-ray diffraction performed on the {111} plane, the {002} plane, and the {022} plane in accordance with the 2θ/θ method are each set to I R . {111}, I R {002}, I R {022}, the fractions P R {111}, P R {002}, P R {022} of the intensity values of the respective diffraction peaks are set to: P R {111}=[I R {111}/(I R {111}+I R {002}+I R {022})]×100, P R {002}=[I R {002}/(I R {111}+I R {002}+I R {022})]×100, P R {022}=[I R {022}/(I R {111}+I R {002}+I R { 022})]×100, in the plurality of crystal faces of the copper plating layer, obtained by X-ray diffraction performed on the {111} plane, the {002} plane, and the {022} plane according to the 2θ/θ method Diffracting peak Each set intensity value I M {111}, I M {002}, I M {022}, the fraction of the intensity values of each diffraction peak P M {111}, P M {002}, P M {022}Set to: P M {111}=[I M {111}/(I M {111}+I M {002}+I M {022})]×100, P M {002}=[I M {002}/(I M {111}+I M {002}+I M {022})]×100, P M {022}=[I M {022}/(I M {111}+I M When {002}+I M {022})]×100, at least one of the following states is satisfied: P M {111}≧15.0 (1) satisfying the following formula (1), and further satisfying the following formula: (2) The state of P M {111}>(P R {111}+5)...(2); satisfying the following equations (3), (4) P M {002}<(P R {002}-10 ) (3), P M {002}>(P R {002}+10) (4) The state of any one of the following formulas (5), (6) P M {022}<( P R {022}-10) (5), P M {022}> (P R {022} + 10) (6) The state of any one of them. 如申請專利範圍第1項所述之附有銅鍍層的壓延銅箔,其中,滿足以下的式(2)、(4)、(6)中的至少任一個:PM{111}>(PR{111}+5)…(2),PM{002}>(PR{002}+10)…(4),PM{022}>(PR{022}+10)…(6)。 The rolled copper foil with a copper plating layer as described in claim 1, wherein at least one of the following formulas (2), (4), and (6) is satisfied: P M {111}> (P R {111}+5)...(2),P M {002}>(P R {002}+10)...(4),P M {022}>(P R {022}+10)...(6 ). 如申請專利範圍第1項或第2項所述之附有銅鍍層的壓延銅箔,其中,所述壓延銅箔由下述物質形成:由韌銅或無氧銅形成的純銅、或者以韌銅或無氧銅為母相的低濃度銅合金,所述壓延銅箔採取純銅型集合組織的形態。 The rolled copper foil with copper plating as described in claim 1 or 2, wherein the rolled copper foil is formed of pure copper formed of tough or copper-free copper or tough Copper or oxygen-free copper is a low-concentration copper alloy of a mother phase, and the rolled copper foil adopts a form of a pure copper-type aggregate structure. 如申請專利範圍第1項至第3項中任一項所述之附有銅鍍層的壓延銅箔,其中,所述銅鍍層和所述壓延銅箔的整體的厚度為1μm以上20μm以下,所述銅鍍層的厚度為0.1μm以上1.0μm以下。 The rolled copper foil with a copper plating layer as described in any one of Claims 1 to 3, wherein the copper plating layer and the rolled copper foil have a thickness of 1 μm or more and 20 μm or less. The thickness of the copper plating layer is 0.1 μm or more and 1.0 μm or less. 如申請專利範圍第1項至第4項中任一項所述之附有銅鍍層的壓延銅箔,其中,其為柔性印刷電路板用附有銅鍍層的壓延銅箔。 A rolled copper foil with a copper plating layer as described in any one of claims 1 to 4, which is a rolled copper foil with a copper plating layer for a flexible printed circuit board.
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JP5351461B2 (en) * 2008-08-01 2013-11-27 日立電線株式会社 Copper foil and copper foil manufacturing method
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CN107891636A (en) * 2017-11-22 2018-04-10 无锡乐普金属科技有限公司 The preparation method of copper-molybdenum copper copper composite plate
TWI740697B (en) * 2020-10-27 2021-09-21 財團法人工業技術研究院 Copper plating structure and package structure including the same

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JP2014210950A (en) 2014-11-13
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CN104109888A (en) 2014-10-22
KR20140125720A (en) 2014-10-29

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