JP2008091431A - Method for manufacturing flexible copper clad laminated plate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To produce a flexible copper clad laminated plate having bending characteristic suitable for COF application by controlling diameter of crystal grain of the copper foil in the subsequent heat treatment process even in the case where an electrolytic copper foil having excellent transportability of copper foil is used to manufacture the copper clad laminated plate. <P>SOLUTION: In the method of manufacturing a flexible copper clad laminated plate where a polyimide resin layer is formed to one surface of the copper foil, in the case where element of the copper foil is measured with a secondary ion mass analysis (SIMS), an electrolytic copper foil having peak strength of carbon of 4.0 or less is used for the copper peak strength of 50.0 and the polyimide precurser resin solution is coated to one surface of the copper foil. The copper foil is dried and hardened with the subsequent heat treatment process. In the heat treatment process explained above, the copper foil is maintained within the temperature range of 280 to 400°C for one minute or more and an average value of the crystal grain diameter is set within the range of 3 to 7 μm. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for producing a flexible copper-clad laminate (hereinafter sometimes abbreviated as a copper-clad laminate) used in electronic equipment, and more specifically, a method for producing a flexible copper-clad laminate having excellent bending characteristics. It is about.

  Flexible copper-clad laminates are widely used in electronic devices that require flexibility, flexibility, and high-density mounting, such as movable parts and hinge parts in hard disks. In recent years, further downsizing and sophistication of the device has progressed, and copper clad laminates have been folded and stored in narrow places, and the bending angle of the device itself has become sharper, so it has higher flexibility. The supply of copper-clad laminates has become essential.

  Under such a background, it is known to reduce the thickness of the copper foil as a means for improving the flexibility of the copper foil. In this case, the distortion generated at the outer periphery of the bent portion during bending is reduced, and the flexibility is improved. However, simply thinning the copper-clad laminate has a limit due to design limitations.

  Moreover, the rolled copper foil is known as a copper foil excellent in flexibility. As a manufacturing method of rolled copper foil, electrolytic copper is cast into an ingot, and rolling and annealing are repeated to form a foil. The copper foil produced by this method has a high elongation rate and a smooth surface, so that it does not easily crack and has excellent folding resistance. However, rolled copper foil is expensive, and it is difficult to produce a copper foil having a width of 1 m or more due to mechanical restrictions during production. Furthermore, it is difficult to stably produce a rolled copper foil having a small thickness, and in order to increase the flexibility by reducing the thickness, it is necessary to perform a process such as half etching.

  On the other hand, there is an electrolytic copper foil as a copper foil that can be adjusted in thickness relatively easily at a low price. In this method of manufacturing an electrolytic copper foil, first, a large cylindrical cathode having a diameter of 2 to 3 m, called a drum in an electrolyte containing copper sulfate as a main component, is half-sunk, and an anode is provided so as to surround it. Then, this is rotated while electrodepositing copper on the drum, and the deposited copper is sequentially peeled off and wound up. However, since impurities such as additives are usually present in the electrolytic solution, the crystal grain size of the deposited copper is fine. When the crystal grain size is fine, the elongation of the copper foil is low, and cracks are generated starting from the grain boundaries of the crystal. Therefore, the flexibility is remarkably inferior to that using the rolled copper foil.

  A technique for regenerating a crystal structure by a process called annealing or recrystallization of copper foil has been reported. For example, Japanese Patent Application Laid-Open No. 11-293367 (Patent Document 1) discloses a method of recrystallizing a copper alloy in a rolling process. JP-A-8-296082 (Patent Document 2) shows an electrolytic copper foil with good recrystallization, and JP-A-8-283886 (Patent Document 3) has improved bending characteristics. An electrolytic copper foil for a flexible wiring board is shown. However, for example, in a method for producing a copper clad laminate by a cast method in which a solution-like polyimide precursor resin is applied and heat treatment for drying and thermosetting (imidization) is performed, the heat treatment step is 300 ° C. or higher. The heat is applied. When heat treatment is performed at such a high temperature, the copper foil is completely annealed, and does not stretch and becomes brittle. Moreover, since wrinkles entered due to heat shrinkage of the copper foil, there was also a problem that the transportability deteriorated.

JP-A-11-293367 JP-A-8-296082 JP-A-8-283886 JP 2003-338525 A JP 2006-51800 A JP 2006-190824 A

  Among flexible laminates, a two-layer flexible laminate comprising a metal foil and a polyimide resin layer is widely used as a wiring board for mounting semiconductor elements because of the high heat resistance of the polyimide resin layer. However, the flexible laminates known so far have excellent thermal characteristics that can withstand the mounting of semiconductor elements under high temperature and high pressure conditions, and none of them have various characteristics as flexible laminates. It was a fact.

  On the other hand, in response to the demand for downsizing of electronic devices, a semiconductor element (also called an IC chip) is formed on a flexible wiring board (also called a wiring board) obtained by forming a circuit on a metal foil (conductor layer) of a flexible laminate. Technology that implements the above has been developed. For example, Japanese Patent Laid-Open No. 2003-338525 (Patent Document 4) discloses a technique related to a semiconductor device and a method for manufacturing the semiconductor device. However, a technique similar to the method including the technique described herein includes a semiconductor element. When mounting on a wiring board via a resin, the semiconductor element is heated to a high temperature together with the sealing jig in order to cure or soften the intervening resin component. This heating temperature is usually 250 ° C. or higher. In addition, there is a method of forming a eutectic with metals that are in contact with each other without interposing a resin. In this case, the eutectic is heated to a higher temperature. As disclosed in Patent Document 4, the mounting of the semiconductor element on the substrate is performed by pressing the bumps of the semiconductor element on the conductor layer of the wiring substrate under heating. In this case, the semiconductor element in contact with the conductor circuit of the laminated board is mounted. Since bumps and other protrusions are pressed against and pressed against the board at high temperatures, if the resin layer in contact with the wiring board has low heat resistance or is made of a soft material, the pressure will concentrate on the connection part with the temperature. There has been a problem that a part of a circuit or a semiconductor element on the resin layer of the substrate sinks into the insulating resin layer of the substrate and cannot be stably mounted.

  In order to solve the above problem, a flexible laminate having improved heat resistance by making the structure of the insulating resin layer specific has been reported. For example, JP-A-2006-51800 (Patent Document 5) and JP-A-2006-190824 (Patent Document 6) can be mentioned. However, in these flexible laminates, attention is not paid to the conductor portion, and it is difficult to make full use of the bending characteristics.

  An object of the present invention is to provide a method for stably producing a copper-clad laminate having high bending properties in a method for producing a copper-clad laminate comprising a copper foil and a polyimide resin layer. Another object is to provide a flexible wiring board on which a copper-clad laminate for COF and an IC chip are mounted.

  As a result of various investigations, the present inventors can solve the above-mentioned problems by heat treatment under specific conditions in the process of using an electrolytic copper foil having specific characteristics and laminating a polyimide resin layer on the copper foil. The present invention has been completed.

  That is, the present invention relates to a method for producing a copper clad laminate in which a polyimide resin layer is formed on one surface of a copper foil. When the copper foil is subjected to component measurement by secondary ion mass spectrometry (SIMS), the copper peak intensity is measured. Using an electrolytic copper foil having a carbon peak intensity of 4.0 or less with respect to 50.0, applying a polyimide precursor resin solution on one side of the copper foil, drying and curing in a subsequent heat treatment step, in the heat treatment step The method for producing a flexible copper-clad laminate is characterized in that the average value of the crystal grain size is kept within the range of 3 to 7 μm by holding at a temperature range of 280 to 400 ° C. for 1 minute or longer.

  In addition, the present invention applies a polyimide precursor resin solution to one surface of a copper foil and dries, and a high elastic resin layer having a storage elastic modulus at 350 ° C. of 0.1 GPa to 3 GPa and a glass transition temperature of 300 to 400 ° C. ( A layer to be A) is formed, and a polyimide precursor resin solution is applied to the layer surface to be the resin layer (A) and dried, and a low thermal expansion resin layer (B) having a linear thermal expansion coefficient of 10 ppm / K to 20 ppm / K After the layer to be formed is cured, the flexible copper-clad laminate is produced.

  Furthermore, the present invention relates to a method for producing a copper clad laminate in which a polyimide resin layer is formed on one surface of a copper foil. When the copper foil is subjected to component measurement by secondary ion mass spectrometry (SIMS), the copper peak strength is measured. Using an electrolytic copper foil having a carbon peak strength of 4.0 or less with respect to 50.0, superimposing a polyimide resin film on the copper foil, and performing a pressure bonding in a heat treatment step of thermocompression bonding under pressure, A method for producing a flexible copper-clad laminate, characterized in that the average value of the crystal grain size is kept in the range of 3 to 7 μm by holding at 400 ° C. for 1 minute or longer.

  In addition, the present invention applies a polyimide precursor resin solution to the surface of the polyimide resin layer that becomes a low thermal expansion resin layer (B) having a linear thermal expansion coefficient of 1 ppm / K to 20 ppm / K, and then cures by heating. , Forming a layer that becomes a high elastic resin layer (A) with a storage elastic modulus at 350 ° C. of 0.1 GPa to 3 GPa and a glass transition temperature of 300 to 400 ° C., and superimposing the high elastic resin layer (A) on the copper foil The method for producing a flexible copper-clad laminate as described above, wherein pressure bonding is performed by heat treatment under pressure.

  Furthermore, the present invention is a flexible copper clad laminate obtained by the above-described method for producing a flexible copper clad laminate. In addition, the present invention is a wiring board or an electronic component in which this flexible copper-clad laminate is processed into a COF flexible wiring board, and an IC chip is mounted thereon by a COF method.

Hereinafter, the present invention will be described in detail.
The copper clad laminate of the present invention is composed of a copper foil and a polyimide resin layer. The copper foil may be provided on only one side of the polyimide resin layer or on both sides. The method for laminating the polyimide resin layer on the copper foil is not particularly limited. For example, an insulating layer made of a polyimide resin may be formed by a method of applying a polyimide precursor resin solution on a copper foil (hereinafter referred to as a casting method), or a copper foil and a polyimide resin film are thermocompression bonded under pressure. An insulating layer made of polyimide resin may be formed by a method (hereinafter referred to as a laminating method). Each method will be described later, but common parts will be described at the same time.

  As the copper foil, electrolytic copper foil is used. Electrolytic copper foil can be manufactured by a well-known method, and can be obtained by making it precipitate by electrolysis from the electrolyte solution which has copper sulfate as a main component. However, as its characteristics, when the component is measured by secondary ion mass spectrometry (SIMS), the carbon peak intensity is 4.0 or less with respect to the copper peak intensity of 50.0, and recrystallization is performed under certain heat treatment conditions. It is necessary to use those having an average crystal grain size in the range of 3 to 7 μm by the heat treatment. The average crystal grain size of the copper foil defined in the present invention is prepared by preparing copper foil samples after heat treatment, subjecting these copper foil surfaces to physical polishing, and further etching using an acidic corrosive solution. Observed at a magnification of 2000 times with an ultra-deep shape measuring microscope and means a value measured according to ASTM particle size measurement (ASTM E112) by a cutting method. As the electrolytic copper foil used in the present invention, a commercially available electrolytic copper foil is subjected to the above-mentioned heat treatment and an average crystal grain size in the range of 3 to 7 μm can be selected. Examples of such electrolytic copper foil include HL foil manufactured by Nippon Electrolytic Co., Ltd. and WS foil manufactured by Furukawa Circuit Foil Co., Ltd.

  As a means for controlling the bending characteristics of the electrolytic copper foil, it is important to control two factors, the carbon component contained in the copper foil and the crystal grain size. It has been known for a long time that the physical properties of a metal crystal depend on the purity of the material, and in particular, the carbon component contained in the copper crystal itself has a large effect as a lattice defect. As the copper foil repeats plastic deformation, lattice defects of the carbon component gradually increase, and a phenomenon called so-called work hardening occurs around the lattice defects, which becomes so-called work hardening. Break occurs. The average crystal grain size as another factor affecting the plastic deformation of copper foil is that when each crystal grain is regarded as a unit cell structure of lattice defects, the unit cell structure is independent of each other. This has the effect of suppressing the propagation of lattice defects throughout. Accordingly, a larger number of unit cells per unit area is preferable, in other words, a smaller average crystal grain size is preferable. On the other hand, a copper foil having a crystal structure with a large crystal grain size is excellent in flexibility. It is important to balance the two factors. The crystal grain size after the heat treatment is in the range of 3 to 7 μm, preferably 3 to 5 μm. Moreover, the preferable range of the thickness of the copper foil to be used is 5-18 micrometers, and a more preferable range is 8-15 micrometers. If the thickness of the copper foil is less than 8 μm, it is difficult to adjust the tension during the production of the copper clad laminate. On the other hand, if it exceeds 18 μm, it becomes difficult to make full use of the bending characteristics of the copper clad laminate.

  The polyimide resin and its precursor resin can be produced by reacting a known diamine and an acid anhydride in the presence of a solvent. Examples of the diamine used include 4,4′-diaminodiphenyl ether, 2′-methoxy-4,4′-diaminobenzanilide, 1,4-bis (4-aminophenoxy) benzene, and 1,3-bis (4 -Aminophenoxy) benzene, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxy-4,4 Examples include '-diaminobiphenyl and 4,4'-diaminobenzanilide. Examples of the acid anhydride include pyromellitic anhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, and 3,3 ′, 4,4′-diphenylsulfonetetracarboxylic dianhydride. And 4,4′-oxydiphthalic anhydride. Each of the diamine and acid anhydride may be used alone or in combination of two or more.

  Further, this reaction is preferably carried out in an organic solvent, and such an organic solvent is not particularly limited, and specifically, dimethyl sulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide , N-methyl-2-pyrrolidone, hexamethylphosphoramide, phenol, cresol, γ-butyrolactone, and the like, and these can be used alone or in combination. The amount of the organic solvent used is not particularly limited, but the concentration of the precursor resin (polyamic acid) solution obtained by the polymerization reaction is about 5 to 30% by weight. It is preferable to adjust the amount to be used.

  In the present invention, when a copper clad laminate is produced by the casting method, the polyimide resin layer is formed by directly applying the solution on the copper foil in the precursor solution state, but the method is not particularly limited, and a comma is used. It can be applied with a coater such as a die, a knife or a lip. In this coating step, it is preferable that the viscosity of the polymerized precursor resin solution is in the range of 500 to 35,000 cps. The applied polyimide precursor resin layer is dried and cured (imidized) in a subsequent heat treatment step. The heat treatment conditions in this case can be performed in a temperature range of 100 to 400 ° C. for a total of about 10 to 40 minutes. In the present invention, after the solvent is dried at 160 ° C. or less, the copper foil is recrystallized. Therefore, it is necessary to hold for at least 1 minute in the temperature range of 280 ° C to 400 ° C. Preferable holding conditions are in the temperature range of 300 to 390 ° C. for 3 to 30 minutes, and more preferably in the temperature range of 310 to 380 ° C. for 5 to 20 minutes. If the holding conditions in the heat treatment are not above, control of the crystal grain size of the copper foil becomes inappropriate, and it becomes difficult to obtain a highly flexible copper-clad laminate.

  Here, the polyimide resin layer of the copper clad laminate may be formed of only a single layer or may be formed of a plurality of layers. When making a polyimide resin layer into multiple layers, it can form by apply | coating another polyimide precursor resin sequentially on the polyimide precursor resin layer which consists of a different structural component. When the polyimide resin layer is composed of three or more layers, the polyimide resin having the same configuration may be used twice or more.

  The polyimide resin layer has a low thermal expansion polyimide resin layer having a coefficient of thermal expansion of less than 30 ppm / K, preferably in the range of 5 ppm / K to 25 ppm / K, regardless of whether it is a single layer or a plurality of layers. It is preferable. And it is preferable to provide the thermoplastic polyimide resin layer whose glass transition temperature is 400 degrees C or less, Preferably it is the range of 300-380 degreeC in the surface of either one or both surfaces of this low thermal expansion polyimide resin layer.

  Advantageously, a polyimide precursor resin solution is applied to one side of the copper foil and dried, and a high elastic resin layer (A) having a storage elastic modulus at 350 ° C. of 0.1 GPa to 3 GPa and a glass transition temperature of 300 to 400 ° C. A low thermal expansion resin layer (B) having a linear thermal expansion coefficient of 10 ppm / K to 20 ppm / K by applying and drying another polyimide precursor resin solution on the surface of the resin layer (A). After forming the layer to be), curing is preferably performed. In this case, a copper-clad laminate having a layer structure consisting of copper foil / high elastic resin layer (A) / low thermal expansion resin layer (B) is obtained, but one more layer is provided on the low thermal expansion resin layer (B). You may provide the polyimide resin layer more than a layer.

In the present invention, when a copper clad laminate is produced by a laminating method, the copper foil and the polyimide resin film are thermocompression bonded. However, the method is not particularly limited as long as a predetermined temperature condition is satisfied. Can be adopted. For example, a normal hydro press, a vacuum type hydro press, an autoclave pressurizing vacuum press, a continuous thermal laminator and the like can be mentioned. Among these methods, use a vacuum hydropress and a continuous thermal laminator from the viewpoint that a sufficient pressing pressure can be obtained, residual volatiles can be easily removed, and oxidation of the copper foil can be prevented. Is preferred. In addition, when the copper foil and the polyimide resin film are bonded together by thermocompression bonding in this way, it can be performed in the range of 200 to 400 ° C., but is maintained for at least 1 minute in the temperature range of 280 ° C. to 400 ° C. You need to do. Preferable holding conditions are 3 to 40 minutes in the temperature range of 290 to 360 ° C, more preferably 5 to 30 minutes in the temperature range of 300 to 340 ° C. By holding in this temperature range for a predetermined time, thermocompression bonding and heat treatment are performed, and the crystal grain size of the copper foil can be adjusted. The press pressure is usually about 100 to 150 kgf / cm ² although it depends on the type of press equipment used. The polyimide resin film may be a film alone or may be formed as a polyimide resin layer on a substrate. In the latter case, the substrate can be peeled off if necessary after thermocompression bonding.

  Also in the laminating method, the polyimide resin layer of the copper clad laminate may be formed from a single layer or may be composed of a plurality of layers. When making a polyimide resin layer into multiple layers, it can form by apply | coating another polyimide precursor resin sequentially on a 1st polyimide precursor resin layer. When the polyimide resin layer is composed of three or more layers, the polyimide resin having the same configuration may be used twice or more.

  Advantageously, the polyimide resin film or polyimide resin layer to be overlaid on the copper foil has another surface on the polyimide precursor resin layer that becomes a low thermal expansion resin layer (B) having a linear thermal expansion coefficient of 10 ppm / K to 20 ppm / K. After applying and drying the polyimide precursor resin solution, it is cured by heating to form a high elastic resin layer (A) with a storage elastic modulus at 350 ° C of 0.1 GPa to 3 GPa and a glass transition temperature of 300 to 400 ° C. It is preferable to prepare a film or a polyimide resin layer, and to superimpose the copper foil and the surface of the high-elasticity resin layer (A) to perform pressure bonding. In this case, a copper-clad laminate having a layer structure consisting of copper foil / high elastic resin layer (A) / low thermal expansion resin layer (B) is obtained, but one more layer is provided on the low thermal expansion resin layer (B). You may provide the polyimide resin layer more than a layer.

  The polyimide resin layer has a low thermal expansion polyimide resin layer having a coefficient of thermal expansion of less than 30 ppm / K, preferably in the range of 5 ppm / K to 25 ppm / K, regardless of whether it is a single layer or a plurality of layers. It is preferable. The low thermal expansion polyimide resin layer (B) has a high elastic resin layer (A) (thermoplastic polyimide) having a glass transition temperature of 400 ° C. or lower, preferably 300 to 380 ° C. on one or both surfaces. It is preferable to provide a resin layer.

  Here, as the low thermal expansion polyimide resin, a structural unit represented by the following general formula (1) is preferably used as a main structural unit.

但し、Ar₁は式（２）又は式（３）で表される４価の芳香族基を示し、Ar₃は式（４）又は式（５）で表される２価の芳香族基を示し、qは構成単位の存在モル比を示し、0.1〜1.0の範囲である。

However, Ar < ₁ > shows the tetravalent aromatic group represented by Formula (2) or Formula (3), Ar < ₃ > shows the bivalent aromatic group represented by Formula (4) or Formula (5). Q represents the molar ratio of the constituent units and is in the range of 0.1 to 1.0.

但し、R₁は独立に炭素数１〜６の１価の炭化水素基又はアルコキシ基を示し、X及びYは独立に、単結合又は炭素数１〜15の２価の炭化水素基、O、S、CO、SO、SO₂若しくはCONHから選ばれる２価の基を示し、nは独立に０〜４の整数を示す。

Provided that R ₁ independently represents a monovalent hydrocarbon group or alkoxy group having 1 to 6 carbon atoms, and X and Y independently represent a single bond or a divalent hydrocarbon group having 1 to 15 carbon atoms, O, A divalent group selected from S, CO, SO, SO _{2 and} CONH is shown, and n independently represents an integer of 0 to 4.

  The thermoplastic polyimide resin can also be obtained by using one or more known diamines and known acid anhydrides in appropriate combination. The thermoplastic polyimide resin layer preferably has a glass transition temperature of 400 ° C. or lower, preferably in the range of 300 to 380 ° C., and preferably has a thermal expansion coefficient of 30 ppm / K or higher. When two or more polyimide resin layers having a glass transition temperature of 400 ° C. or less and a thermal expansion coefficient of less than 30 ppm / K are used, the polyimide resin layer not in contact with the copper foil layer is used as a low thermal expansion polyimide resin. It is better to treat it as a layer. The coefficient of thermal expansion refers to the value of the average coefficient of linear thermal expansion from 100 ° C to 250 ° C measured using a thermomechanical analyzer, and the glass transition temperature is a loss measured by a dynamic viscoelasticity measuring device. The peak value of elastic modulus.

  The total thickness of the polyimide resin layer is preferably in the range of 15 to 50 μm, more preferably in the range of 20 to 40 μm. When the polyimide resin layer is composed of a low thermal expansion polyimide resin layer and a thermoplastic polyimide resin layer, 1/2 or more of the total thickness, preferably 2/3 to 9/10 is composed of a low thermal expansion polyimide resin layer It is good to do. Further, from the viewpoint of heat resistance and dimensional stability, the thickness of one layer of the thermoplastic polyimide resin layer is preferably 5 μm or less, preferably in the range of 1 to 4 μm. When the thermoplastic polyimide resin layer having the same thickness is provided on both sides of the low thermal expansion polyimide resin layer, the total thickness of the thermoplastic polyimide resin layer is twice the above value.

  The flexible copper clad laminate of the present invention is obtained by the above-described method for producing a flexible copper clad laminate. Moreover, the wiring board mounted with the IC chip of the present invention is a flexible wiring board for COF obtained by subjecting the above-mentioned flexible copper-clad laminate to processing including circuit processing, and then the IC chip or semiconductor element is formed by the COF method. It is obtained by mounting.

  When the flexible copper-clad laminate that can be produced by the present invention is applied as a COF (chip on film) application for a flexible printed circuit board, the low thermal expansion polyimide resin layer (B) has a linear thermal expansion coefficient of 10 ppm / K to The low thermal expansion resin layer in the range of 20 ppm / K and the thermoplastic polyimide resin layer (A) have a storage elastic modulus at 350 ° C. of 0.1 GPa to 3 GPa, a glass transition temperature of 300 to 400 ° C., preferably 310 A highly elastic resin layer having a temperature of ˜380 ° C. is preferable. As such a high elastic resin layer (A), for example, the high elastic resin layer disclosed in Patent Document 4 can be applied, but the storage elastic modulus can be increased without deteriorating the bending characteristics of the laminate. Since it became possible to improve, the sinking at the time of mounting of the semiconductor element under high temperature can be suppressed.

  An example of a wiring board in which an IC chip is mounted on a COF flexible wiring board will be described with reference to FIG. The IC chip 1 is connected to the copper wiring 3 via the bump 2 to the COF flexible wiring board A having the copper wiring 3 and the polyimide resin layer 4 obtained by circuit processing of the flexible copper-clad laminate. In this case, if the polyimide resin layer 4 does not have an appropriate linear thermal expansion coefficient, storage elastic modulus, glass transition temperature, etc., the wiring sinks into the polyimide resin layer 4 like the copper wiring 3 on the right side of the drawing. However, since the polyimide resin layer 4 of the flexible wiring board A for COF obtained from the copper-clad laminate configured as in the present invention is appropriate, the wiring is a polyimide resin layer like the copper wiring 3 on the left side of the drawing. It will not sink into 4.

  A wiring board in which an IC chip is mounted on a flexible wiring board for COF and an example of using it for a liquid crystal panel will be described with reference to FIG. The IC chip 1 is mounted on the side of the liquid crystal panel 5. When mounted, COF flexible wiring board A and IC chip 1 are tin plated on copper wiring 3 of COF flexible wiring board A, and bump 2 of IC chip 1 is gold plated. By applying heat, it is alloyed by Au-Sn eutectic and joined. The printed circuit board B and the COF flexible wiring board A are joined by joining the conductor layer 6 of the printed circuit board B and the copper wiring 3 of the COF flexible wiring board A using an anisotropic conductive film 7. The solder resist 8 covers the exposed portion of the copper wiring 3. As shown in FIG. 2, since the flexible wiring board A for COF is folded and stored on the back side of the liquid crystal of a television, a personal computer, or a mobile phone, high flexibility is required. Further, in order to meet the needs for space saving and miniaturization, the bending radius of the flexible wiring board A for COF is further reduced, and higher bending performance is required, and the copper-clad laminate of the present invention or obtained from this The flexible wiring board satisfies these requirements.

  According to the present invention, even when an electrolytic copper foil excellent in copper foil transportability in the production of a copper clad laminate is used, by controlling the crystal grain size of the copper foil in the subsequent heat treatment step, the bending property is good. A flexible copper clad laminate can be manufactured. Thereby, the flexible copper clad laminated board which can be manufactured by this invention can be effectively used for the flexible wiring board which mounted IC for a COF use.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to this. In the following examples, various evaluations are based on the following unless otherwise specified.

1) Measuring method of average grain size After performing physical polishing on the copper foil surface, it was further etched with an acidic corrosive solution, and this was 2000 times with the ultra deep depth measurement microscope VK8500 manufactured by Keyence Corporation. The average crystal grain size was determined using a method based on ASTM particle size measurement by a cutting method (ASTM E112).

2) Bending test Evaluation was performed by the IPC test method and MIT test method shown below. The bending test sample is a circuit of a commercially available cover material in which a copper-clad laminate is processed for each bending test and a 12 μm thick polyimide film is provided on the surface on which the circuit is formed. The formed surface and the adhesive layer were made to face each other and obtained by thermocompression bonding using a high-temperature vacuum press machine under conditions of a pressure of 40 kgf / cm ² and 160 ° C. for 60 minutes. Hereinafter, it is called a test piece.

2-1) MIT bending test method An MIT bending test was performed using an MIT bending test apparatus manufactured by Toyo Seiki Seisakusho. The bending was repeated under the following conditions, and the number of times until the test piece was disconnected was determined as the number of bendings.
Specimen width: 9 mm, Specimen length: 90 mm, Circuit width / Insulation width = 150 μm / 200 μm, Specimen sampling direction: Specimen sample length is parallel to the machine direction, bending radius r2 = 0.8 mm, The test was performed under the conditions of vibration stroke = 20 mm, vibration speed: 1500 times / minute, weight weight = 250 g, bending angle = 90 ± 2 °.

3) Measurement of glass transition temperature and storage elastic modulus Using a viscoelasticity analyzer (RSA-II manufactured by Rheometric Science Effy Co., Ltd.), the polyimide film obtained from the synthesis example was used as a 10 mm wide sample, and a vibration of 1 Hz was applied. While measuring the dynamic viscoelasticity when the temperature was raised from room temperature to 400 ° C at a rate of 10 ° C / min, the glass transition temperature (maximum value of loss tangent (Tanδ)) and the storage elastic modulus at 350 ° C were obtained. It was.

4) Measurement of the coefficient of thermal expansion Using a thermomechanical analyzer (manufactured by Seiko Instruments Inc.), raise the temperature of the polyimide film obtained in the synthesis example to 250 ° C. and hold at that temperature for 10 minutes, and then 5 ° C./min. It cooled at the speed | rate and calculated | required the average thermal linear expansion coefficient from the dimensional change of the polyimide film from 240 degreeC to 100 degreeC.

Synthesis example 1
N, N-dimethylacetamide is placed in a reaction vessel. In this reaction vessel, 4,4′-diamino-2′-methoxybenzanilide (MABA) was dissolved in the vessel with stirring. Then pyromellitic anhydride (PMDA) and 4,4'-diaminodiphenyl ether (DAPE) were added. The total amount of monomers charged was 15 wt%, the molar ratio of each diamine was MABA: DAPE, 60:40, and the molar ratio of diamine to acid anhydride was 1.0. Thereafter, stirring was continued for 3 hours to carry out a polymerization reaction to obtain a viscous polyimide precursor resin liquid a. The polyimide precursor resin liquid a obtained in this synthesis example was used as a polyimide resin film, and the coefficient of thermal expansion was measured. As a result, it was 15 ppm / K.

Synthesis example 2
N, N-dimethylacetamide is placed in a reaction vessel. 2,2′bis [4- (4-aminophenoxy) phenyl] propane (BAPP) and 4,4′-bis (4-aminophenoxy) biphenyl (BAPB) were dissolved in the reaction vessel with stirring. It was. Next, PMDA was added. The total amount of monomers was 15 wt%, the molar ratio of each diamine was BAPP: BAPB, 70:30, and the molar ratio of diamine to acid anhydride was 1.0. Thereafter, the stirring was continued for 3 hours to carry out the polymerization reaction to obtain a viscous polyimide precursor resin liquid b. When the polyimide precursor resin liquid b obtained by this synthesis example was imidized and the glass transition temperature and the storage elastic modulus were measured, they were 343 ° C. and 0.3 GPa, respectively.

Reference Example The polyimide precursor resin liquid b obtained in Synthesis Example 2 was uniformly applied onto a copper foil so that the thickness after curing was about 2 μm, and then dried by heating at 130 ° C. to remove the solvent. Next, the polyimide precursor resin a prepared in Synthesis Example 1 so as to be laminated thereon was uniformly applied so that the thickness after curing was about 35 μm, and the solvent was removed by heating and drying at 135 ° C. Further, the polyimide precursor resin liquid b was uniformly applied onto the polyimide precursor resin layer so that the thickness after curing was about 3 μm, and the solvent was removed by heating at 130 ° C. Subsequently, a copper-clad laminate having a polyimide resin layer thickness of 40 μm was obtained through a heat treatment step in which the temperature was raised stepwise from 130 ° C. to 380 ° C. over 10 minutes.

This copper clad laminate was etched with a ferric chloride solution to remove the copper foil, and a polyimide film was obtained. A metal thin film was formed by setting in an RF magnetron sputtering apparatus so that a metal raw material was formed on the surface of the polyimide film from which the copper foil was removed. After reducing the pressure in the tank in which the sample was set to 3 × 10 ⁻⁴ Pa, argon gas was introduced to make the degree of vacuum 2 × 10 ⁻¹ Pa, and plasma was generated by an RF power source. With this plasma, a nickel: chromium alloy layer (ratio 8: 2, 99.9 wt%) was formed on the copper foil removal surface of the polyimide film so that the nichrome layer had a thickness of 30 nm. After forming the nichrome layer, 200 nm of copper (99.99 wt%) was further formed on the nichrome layer by sputtering under the same atmosphere. Then, a copper plating layer having a thickness of 8 μm was formed in an electrolytic plating bath using the copper sputtered film as an electrode. As an electrolytic plating bath, a copper sulfate bath (100 g / L of copper sulfate, 220 g / L of sulfuric acid and 40 mg / L of chlorine as the bath composition, and phosphorus-containing copper as the anode) is used, and the current density is 2.0 A / dm ² . Thus, a plating film was formed. After plating, it was washed with sufficient distilled water and dried. Thus, a copper clad laminate S composed of polyimide film / nichrome layer / copper sputter layer / electroplated copper layer was obtained.

Example 1
Copper foil 1 (electrolytic copper foil, thickness 8 μm, carbon peak 0.29 by SIMS) was prepared. On this copper foil, the polyimide precursor resin liquid b obtained in Synthesis Example 2 was uniformly applied so that the thickness after curing was about 2 μm, and then dried by heating at 130 ° C. to remove the solvent. Next, the polyimide precursor resin a prepared in Synthesis Example 1 was applied uniformly so as to be laminated thereon so that the thickness after curing was about 35 μm, and dried by heating at 135 ° C. to remove the solvent. Further, the polyimide precursor resin liquid b was uniformly applied onto the polyimide precursor resin layer so that the thickness after curing was about 3 μm, and the solvent was removed by heating at 130 ° C.

  The obtained laminate 1 was then subjected to a heat treatment step in which the temperature was raised stepwise from 130 ° C. to 380 ° C. over 10 minutes to obtain a copper clad laminate A having a polyimide resin layer thickness of 40 μm. At this time, the maximum heating temperature was 380 ° C., and heat treatment was performed at this temperature for 6 minutes. The total holding time in the temperature range of 300 ° C. to 380 ° C. is about 10 minutes. The average crystal grain size of the copper foil of the obtained copper clad laminate A was 4.0 μm.

Example 2
Copper foil 2 (electrolytic copper foil, thickness 8 μm, carbon peak 0.12 by SIMS) was prepared. Using this copper foil, a copper clad laminate B having a polyimide resin layer thickness of 40 μm was obtained in the same manner as in Example 1. The average crystal grain size of the copper foil of the obtained copper clad laminate B was 3.3 μm.

Comparative Example 1
Copper foil 3 (NA-VLP manufactured by Mitsui Kinzoku Mine Co., Ltd., thickness 8 μm, carbon peak 8.25 by SIMS) was prepared. Using this copper foil, a copper clad laminate C having a polyimide resin layer thickness of 40 μm was obtained in the same manner as in Example 1. The average crystal grain size of the copper foil of the obtained copper-clad laminate C was 1.3 μm.

Comparative Example 2
The copper foil 1 was prepared and the laminated body 1 was obtained like this Example 1 using this copper foil. The laminate 1 was then subjected to a heat treatment step in which the temperature was raised stepwise from 130 ° C. to 250 ° C. over 10 minutes, and a copper-clad laminate D having a polyimide resin layer thickness of 40 μm was obtained. At this time, the maximum heating temperature was 250 ° C., and the heat treatment was performed at this temperature for 6 minutes. The average crystal grain size of the copper foil of the obtained copper-clad laminate D was 2.2 μm.

Comparative Example 3
Copper foil 4 (electrolytic copper foil, thickness 8 μm, carbon peak 4.33 by SIMS) was prepared. Using this copper foil, a copper clad laminate E having a polyimide resin layer thickness of 40 μm was obtained in the same manner as in Example 1. The average crystal grain size of the copper foil of the obtained copper clad laminate E was 3.0 μm.

  The above results are summarized in Table 1. The ratio of the number of bendings in Table 1 represents the ratio of the copper-clad laminate S produced in the reference example to the number of bendings, and the overall judgment was that the ratio was 1.0 or less as NG and that exceeding 1.0 was OK.

Illustration of wiring board with IC chip mounted Illustration of liquid crystal device

Explanation of symbols

1: IC chip, 2: bump, 3: copper wiring, 4: polyimide resin layer, 5: liquid crystal panel, 6: conductor layer, 7: anisotropic conductive film, 8: solder resist

Claims (6)

  In the copper clad laminate manufacturing method in which a polyimide resin layer is formed on one side of the copper foil, when measuring the component by secondary ion mass spectrometry (SIMS) as a copper foil, the carbon peak with respect to the copper peak intensity of 50.0 Using an electrolytic copper foil having a strength of 4.0 or less, applying a polyimide precursor resin solution on one side of the copper foil, drying and curing in a subsequent heat treatment step, in the heat treatment step, 280-400 ℃ A method for producing a flexible copper-clad laminate, wherein the average value of the crystal grain size is kept in the range of 3 to 7 μm by holding for 1 minute or more in the temperature range.   A layer that becomes a highly elastic resin layer (A) having a storage elastic modulus at 350 ° C. of 0.1 GPa to 3 GPa and a glass transition temperature of 300 to 400 ° C. by applying and drying a polyimide precursor resin solution on one side of the copper foil Then, another polyimide precursor resin solution is applied to the layer surface to be the resin layer (A) and dried to form a low thermal expansion resin layer (B) having a linear thermal expansion coefficient of 10 ppm / K to 20 ppm / K. The method for producing a flexible copper-clad laminate according to claim 1, wherein curing is performed after forming the layer.   In the copper clad laminate manufacturing method in which a polyimide resin layer is formed on one side of the copper foil, when measuring the component by secondary ion mass spectrometry (SIMS) as a copper foil, the carbon peak with respect to the copper peak intensity of 50.0 Using an electrolytic copper foil having a strength of 4.0 or less, superimposing a polyimide resin film or a polyimide resin layer on the copper foil, and performing a pressure bonding in a heat treatment step of thermocompression bonding under pressure, in the heat treatment step, 280 to 400 ° C. A method for producing a flexible copper-clad laminate, characterized in that the average value of the crystal grain size is kept in the range of 3 to 7 μm by maintaining at a temperature range of 1 minute or more.   Polyimide resin film or polyimide resin layer to be overlaid on copper foil is a polyimide precursor resin layer on the polyimide precursor resin layer surface that becomes a low thermal expansion resin layer (B) having a linear thermal expansion coefficient of 10 ppm / K to 20 ppm / K. After coating and drying, it is cured by heating to form a layer that becomes a highly elastic resin layer (A) with a storage elastic modulus at 350 ° C of 0.1 GPa to 3 GPa and a glass transition temperature of 300 to 400 ° C. 4. The method for producing a flexible copper-clad laminate according to claim 3, wherein the highly elastic resin layer (A) is superposed and subjected to pressure bonding in a heat treatment step of thermocompression bonding under pressure.   A flexible copper-clad laminate obtained by the method for producing a flexible copper-clad laminate according to claim 1.   A flexible wiring board obtained by processing the flexible copper-clad laminate according to claim 5 into a flexible wiring board for COF, and mounting the IC chip thereon by a COF method.

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