TW201412642A - p型金屬氧化物半導體材料 - Google Patents
p型金屬氧化物半導體材料 Download PDFInfo
- Publication number
- TW201412642A TW201412642A TW102134951A TW102134951A TW201412642A TW 201412642 A TW201412642 A TW 201412642A TW 102134951 A TW102134951 A TW 102134951A TW 102134951 A TW102134951 A TW 102134951A TW 201412642 A TW201412642 A TW 201412642A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal oxide
- oxide semiconductor
- semiconductor material
- indium gallium
- based metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 122
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 120
- 239000000463 material Substances 0.000 title claims abstract description 99
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 19
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims description 30
- 239000011777 magnesium Substances 0.000 claims description 29
- 239000011575 calcium Substances 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 18
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 description 97
- 239000011701 zinc Substances 0.000 description 94
- 229910052733 gallium Inorganic materials 0.000 description 91
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 91
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 90
- 229910052725 zinc Inorganic materials 0.000 description 88
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 77
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 57
- 239000011787 zinc oxide Substances 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000005259 measurement Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 238000004088 simulation Methods 0.000 description 13
- 239000002738 chelating agent Substances 0.000 description 12
- 239000013590 bulk material Substances 0.000 description 11
- 150000004696 coordination complex Chemical class 0.000 description 11
- 150000002471 indium Chemical class 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 238000004364 calculation method Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 150000002258 gallium Chemical class 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000004611 spectroscopical analysis Methods 0.000 description 6
- 235000002906 tartaric acid Nutrition 0.000 description 6
- 239000011975 tartaric acid Substances 0.000 description 6
- 150000003751 zinc Chemical class 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 240000002329 Inga feuillei Species 0.000 description 3
- -1 indium gallium zinc oxide metal oxide Chemical class 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- GMYSDEOJMBLAKZ-UHFFFAOYSA-N calcium indium Chemical compound [Ca].[In] GMYSDEOJMBLAKZ-UHFFFAOYSA-N 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 159000000003 magnesium salts Chemical class 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
- C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/624—Sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/449—Organic acids, e.g. EDTA, citrate, acetate, oxalate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Thin Film Transistor (AREA)
- Catalysts (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本揭露提供一種p型金屬氧化物半導體材料,具有化學式:In1-xGa1-yMx+yZnO4+m,其中M為鈣(Ca)、鎂(Mg)或銅(Cu),0<x+y≦0.1,0≦m≦3,且0<x,0≦y或0≦x,0<y,其中該p型金屬氧化物半導體材料之電洞載子濃度介於1×1015~6×1019cm-3之間。
Description
本揭露係有關於一種金屬氧化物半導體材料,且特別是有關於一種p型氧化銦鎵鋅系之金屬氧化物半導體材料。
隨著顯示技術的快速發展,各種新世代的產品及材料也應運而生。在這些產品中,透明顯示器(transparent display)因具有可透光性、商品互動特性等特點,近年來其相關技術備受矚目。其中,氧化銦鎵鋅(indium gallium zinc oxide,IGZO)為一種可用以製作透明薄膜電晶體之金屬氧化物半導體材料,與利用非晶矽材料所製作之薄膜電晶體相比,藉由將利用氧化銦鎵鋅系之透明金屬氧化物半導體材料所製作之薄膜電晶體與顯示技術結合,可縮小薄膜電晶體尺寸、提高畫素開口率、實現高精細化、提高解析度、以及提供較快的載子(例如電子)遷移率。再者,亦可將簡單的外部電路整合至顯示器中,使電子裝置更加輕薄並降低耗電量。
若將氧化銦鎵鋅系之n型透明金屬氧化物半導體材料及p型透明金屬氧化物半導體材料結合,不僅可實現透明互補式金屬氧化物半導體元件(CMOS)、透明智慧窗(smart window)等應用,亦可將其它例如變頻器(inverter)、發光二
極體等裝置製作為透明狀態。然而,目前所研發出的氧化銦鎵鋅系之透明金屬氧化物半導體材料仍以n型透明金屬氧化物半導體材料為主。
因此,亟需尋求一種新的氧化銦鎵鋅系之p型透明金屬氧化物半導體材料,其能夠解決上述的問題,以提供透明金屬氧化物半導體更多的應用空間。
本揭露提供一種p型金屬氧化物半導體材料,具有化學式:In1-xGa1-yMx+yZnO4+m,其中M為鈣(Ca)、鎂(Mg)或銅(Cu),0<x+y≦0.1,0≦m≦3,且0<x,0≦y或0≦x,0<y,其中p型金屬氧化物半導體材料之電洞載子濃度(hole carrier concentration)介於1×1015~6×1019cm-3之間。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下。
第1A~1F圖繪示了本發明中不同摻雜元素之氧化銦鎵鋅系之金屬氧化物半導體材料的模擬計算結果。
第2圖為本發明中鈣取代銦之鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料之數實施例的電洞載子濃度量測結果。
第3圖為本發明中鈣取代銦之鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料之數實施例的電阻率量測結果。
第4圖為本發明中鈣取代銦之鈣摻雜氧化銦鎵鋅系金屬氧
化物半導體材料之數實施例的電洞載子遷移率量測結果。
本揭露提供數個實施例以說明本發明之技術特徵,實施例之內容及繪製之圖式僅作為例示說明之用,並非用以限縮本發明保護範圍。
本揭露一實施例提供一種p型金屬氧化物半導體材料,具有化學式:In1-xGa1-yMx+yZnO4+m,其中M為鈣(Ca)、鎂(Mg)或銅(Cu),0<x+y≦0.1,0≦m≦3,且0<x,0≦y或0≦x,0<y,其中上述p型金屬氧化物半導體材料之電洞載子濃度(hole carrier concentration)介於1×1015~6×1019cm-3之間。
本揭露之實施例係先藉由模擬計算,得到將鈣、鎂、銅等元素摻雜於氧化銦鎵鋅系金屬氧化物半導體材料中可形成p型金屬氧化物半導體的初步計算結果,再利用軟性化學法分別合成摻雜有鈣、鎂、或銅之p型氧化銦鎵鋅系金屬氧化物半導體材料。
首先針對模擬計算的過程說明如下。本揭露係利用全始量子分子動力學模擬軟體套件(VASP,Vienna Ab-initio Simulation Package)計算在氧化銦鎵鋅系金屬氧化物半導體材料中摻雜不同元素時,其能態密度(DOS,Density of States)對能量之變化關係,並將其結果係繪示於第1A~1F圖中。
第1A圖為摻雜鈣之氧化銦鎵鋅系金屬氧化物半導體材料經VASP模擬所得之能態密度對能量關係圖,經由模擬計算可知此摻雜鈣之氧化銦鎵鋅系金屬氧化物半導體材料的費米能階(EF,Fermi level)係降至價電帶(VB,valence band)
處,故其應為一p型金屬氧化物半導體材料。需注意的是,第1A圖中設定鈣原子半數取代氧化銦鎵鋅系金屬氧化物半導體材料中的銦原子(即,In0.5GaCa0.5ZnO4),是因為實務上在進行模擬計算時,為避免電腦處理數據過於龐大、耗時過久等問題,通常會先以半數取代的條件針對選定之摻雜物進行初步的模擬計算,待確認此摻雜物的初步計算結果後,再實際合成並調整摻雜物比例,以驗證模擬結果,並非代表此摻雜物需在半數取代的條件下才可使氧化銦鎵鋅系金屬氧化物半導體材料展現p型半導體材料之特性。第1B~1C圖分別為摻雜鎂之氧化銦鎵鋅系金屬氧化物半導體材料及摻雜銅之氧化銦鎵鋅系金屬氧化物半導體材料藉由VASP模擬所得之結果,其中在摻雜鎂之氧化銦鎵鋅系金屬氧化物半導體材料中,將鎂原子設定為半數取代氧化銦鎵鋅系金屬氧化物半導體材料中的銦原子(即,In0.5GaMg0.5ZnO4),在摻雜銅之氧化銦鎵鋅系金屬氧化物半導體材料中,將銅原子設定為半數取代氧化銦鎵鋅系金屬氧化物半導體材料中的銦原子(即,In0.5GaCu0.5ZnO4)。由第1B~1C圖之模擬計算結果可知,由於上述半數取代銦原子的摻雜鎂之氧化銦鎵鋅系金屬氧化物半導體材料及摻雜銅之氧化銦鎵鋅系金屬氧化物半導體材料的費米能階係降至價電帶處,故其亦應為一p型金屬氧化物半導體材料。
第1D~1F圖亦為摻雜鈣、鎂、銅之氧化銦鎵鋅系金屬氧化物半導體材料藉由VASP模擬所得之結果,但此處在摻雜鈣之氧化銦鎵鋅系金屬氧化物半導體材料中,將鈣原子設定為半數取代氧化銦鎵鋅系金屬氧化物半導體材料中的鎵原
子(即,InGa0.5Ca0.5ZnO4),在摻雜鎂之氧化銦鎵鋅系金屬氧化物半導體材料中,將鎂原子設定為半數取代氧化銦鎵鋅系金屬氧化物半導體材料中的鎵原子(即,InGa0.5Mg0.5ZnO4),在摻雜銅之氧化銦鎵鋅系金屬氧化物半導體材料中,將銅原子設定為半數取代氧化銦鎵鋅系金屬氧化物半導體材料中的鎵原子(即,InGa0.5Cu0.5ZnO4)。由第1D~1F圖之模擬計算結果可知,由於上述半數取代鎵原子的摻雜鈣之氧化銦鎵鋅系金屬氧化物半導體材料、摻雜鎂之氧化銦鎵鋅系金屬氧化物半導體材料及摻雜銅之氧化銦鎵鋅系金屬氧化物半導體材料的費米能階亦降至價電帶處,故其亦應為一p型金屬氧化物半導體材料。
隨後,根據上述模擬結果,利用軟性化學法分別合成摻雜有不同含量之鈣、鎂、銅的氧化銦鎵鋅系金屬氧化物半導體材料。
在一實施例中,此合成方法係先混合(1-x)莫耳份的銦鹽、(1-y)莫耳份的鎵鹽、1莫耳份的鋅鹽、(x+y)莫耳份的摻雜金屬鹽(例如鈣、鎂、或銅之鹽類)、及螯合劑於一溶液中,其中0<x+y≦0.1,且0<x,0≦y或0≦x,0<y,並於常溫下混合60~70分鐘,以形成一包含銦、鎵、鋅、及摻雜金屬之錯合物的溶液,其中各金屬鹽可使用包含銦、鎵、鋅、或摻雜金屬之硝酸鹽或檸檬酸鹽,螯合劑可使用酒石酸(tartaric acid)。接著,升溫至155℃~175℃,以蒸發溶液中的液體而使溶液成為凝膠態,再將其乾燥成粉狀,繼而進行燒結步驟使金屬錯合物氧化,以形成金屬氧化物粉體。之後,可進行陶瓷製程之模壓、射出、冷均壓(CIP,cold isostatic press)、注漿等相關製
程,並進行燒結和機械加工製程,以製作摻雜之氧化銦鎵鋅系金屬氧化物半導體材料(例如,In1-xGa1-yMx+yZnO4+m,其中M為鈣(Ca)、鎂(Mg)或銅(Cu),0<x+y≦0.1,0≦m≦3,且0<x,0≦y或0≦x,0<y)的塊材或靶材。
在形成上述塊材或靶材後,可藉由濺鍍等方法,形成摻雜之氧化銦鎵鋅系金屬氧化物半導體材料的薄膜,以應用於電子裝置(例如透明顯示器、透明場效電晶體、發光二極體、透明積體電路半導體元件)的製作。
實施例1~7:鈣取代銦之鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料
首先,在保持金屬總含量為0.5 mol的條件下,將0.167 mol之鎵鹽(Ga(NO3)3)、0.167 mol之鋅鹽(Zn(NO3)2)以及依照表1之化學劑量所分別秤取之數種含量比例之銦鹽(In(NO3)3)及鈣鹽(Ca(NO3)2)加入濃度為1.4 N之硝酸(HNO3)水溶液中,並加入0.55mol之酒石酸作為螯合劑,於常溫下混合1小時,以合成本發明之實施例1~7。上述反應係在混合金屬離子析出後,藉由螯合劑將銦、鎵、鋅、鈣結合而形成一金屬錯合物。
隨後,升溫至155℃,蒸發溶液中的液體使溶液成為凝膠態,並進行乾燥步驟將其乾燥成粉狀,繼而進行燒結步驟使上述金屬錯合物氧化以形成金屬氧化物半導體粉體,此金屬氧化物半導體具有In1-xGa1-yCax+yZnO4+m之化學式,其中0.0005≦x≦0.1,y=0,0≦m≦3。
接著,進行陶瓷製程之模壓、射出、冷均壓、注
漿等相關製程,以製作鈣取代銦之鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料的塊材或靶材。
藉由對合成出的鈣摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行X光能量散射光譜(Energy-Dispersive X-Ray Spectroscopy,EDS)分析,可得到各成份元素的含量。其中,鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料中金屬成份元素的含量(莫耳比)如表1所示,非金屬成份元素之氧的含量(莫耳比)在實施例1~7中則落在0≦m≦3之範圍內。例如,在實施例5中,藉由X光能量散射光譜分析,可得到鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料中各成份元素的莫耳比為In:Ca:Ga:Zn:O=0.995:0.005:1:1:6。
再者,藉由對合成出的鈣摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行霍爾量測(Hall measurement),可得到鈣摻雜氧化銦鎵鋅系金屬氧化物之主要載子型態、載子濃度、電阻率、載子遷移率等特性,如表1及第2~4圖所示。霍爾量測係使用Nano Metrics所生產之HL 5550 LN2 Cryostat霍爾量測儀。
表1顯示了本發明之實施例1~7的鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料中各金屬成份之比例及主要載子型態,第2圖則為本發明中鈣摻雜氧化銦鎵鋅材料之實施例的電洞載子濃度量測結果。由第2圖可知,當鈣取代銦使氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yCax+yZnO4+m中0.0005≦x≦0.1,y=0,0≦m≦3時,藉由霍爾量測所得之主要載子型態為電洞,且其電洞載子濃度在約1×1015~6×1019 cm-3之半導體範圍內,故可確定實施例1~7所合成之鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料為p型。
第3圖為本發明中鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料之數實施例的電阻率量測結果,由第3圖可知,當鈣取代銦使氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yCax+yZnO4+m中0.0005≦x≦0.1,y=0,0≦m≦3時,可得到在約0.89×10-2~1.44×102 ohm-cm之範圍內的電阻率。第4圖則為本發明中鈣摻雜氧化銦鎵鋅系金屬氧化物半導體材料之數實施例的電洞載子遷移率量測結果,如第4圖所示,當鈣取代銦使氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yCax+yZnO4+m中0.0005≦x≦0.1,y=0,0≦m≦3時,可得到大於約1.0 cm2/V-s的電洞載子遷移率。因此,藉由本揭露之方法,可製作出具有良好電性之p型氧化銦鎵鋅系金屬氧化物半導體材料。
實施例8~9:鎂取代銦之鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料
首先,在保持金屬總含量為0.5 mol的條件下,將0.167 mol
之鎵鹽(Ga(NO3)3)、0.167 mol之鋅鹽(Zn(NO3)2)以及依照表2之化學劑量所分別秤取之數種含量比例之銦鹽(In(NO3)3)及鎂鹽(Mg(NO3)2)加入濃度為1.4 N之硝酸水溶液中,並加入0.55 mol之酒石酸作為螯合劑,於常溫下混合1小時,以合成本發明之實施例8~9。上述反應係在混合金屬離子析出後,藉由螯合劑將銦、鎵、鋅、鎂結合而形成一金屬錯合物。
隨後,升溫至155℃,蒸發溶液中的液體使溶液成為凝膠態,並進行乾燥步驟將其乾燥成粉狀,繼而進行燒結步驟使上述金屬錯合物氧化以形成金屬氧化物半導體粉體,此金屬氧化物半導體具有In1-xGa1-yMgx+yZnO4+m之化學式,其中0.001≦x≦0.005,y=0,0≦m≦3。
接著,進行陶瓷製程之模壓、射出、冷均壓、注漿等相關製程,以製作鎂取代銦之鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料的塊材或靶材。
藉由對合成出的鎂摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行X光能量散射光譜分析,可得到鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料中金屬成份元素的含量(莫耳比),如表2所示,以及非金屬成份元素之氧的含量(莫耳比),其在實施例8~9中皆落在0≦m≦3之範圍內。再者,藉由對合成出的鎂摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行霍爾量測,可得到鎂摻雜氧化銦鎵鋅系金屬氧化物半導體之主要載子型態等特性,如表2所示。
[表2]
表2顯示了本發明之實施例8~9的鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料中各金屬成份之比例及主要載子型態。當鎂取代銦使鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yMgx+yZnO4+m中0.001≦x≦0.005,y=0,0≦m≦3時,藉由霍爾量測所得之主要載子型態為電洞,其電洞載子濃度大於1015cm-3,故可確定實施例8~9所合成之鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料為p型,如表2所示。
實施例10~12:銅取代銦之銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料
首先,在保持金屬總含量為0.5 mol的條件下,將0.167 mol之鎵鹽(Ga(NO3)3)、0.167 mol之鋅鹽(Zn(NO3)2)以及依照表3之化學劑量所分別秤取之數種含量比例之銦鹽(In(NO3)3)及銅鹽(Cu(NO3)2)加入濃度為1.4 N之硝酸水溶液中,並加入0.55 mol之酒石酸作為螯合劑,於常溫下混合1小時,以合成本發明之實施例10~12。上述反應係在混合金屬離子析出後,藉由螯合劑將銦、鎵、鋅、銅結合而形成一金屬錯合物。
隨後,升溫至155℃,蒸發溶液中的液體使溶液成為凝膠態,並進行乾燥步驟將其乾燥成粉狀,繼而進行燒結步驟使上述金屬錯合物氧化以形成金屬氧化物半導體粉體,此金屬氧化物半導體具有In1-xGa1-yCux+yZnO4+m之化學式,其中0.001≦x≦0.1,y=0,0≦m≦3。
接著,進行陶瓷製程之模壓、射出、冷均壓、注漿等相關製程,以製作銅取代銦之銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料的塊材或靶材。
藉由對合成出的銅摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行X光能量散射光譜分析,可得到銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料中金屬成份元素的含量(莫耳比),如表3所示,以及非金屬成份元素之氧的含量(莫耳比),其在實施例10~12中皆落在0≦m≦3之範圍內。再者,藉由對合成出的銅摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行霍爾量測,可得到銅摻雜氧化銦鎵鋅系金屬氧化物半導體之主要載子型態等特性,如表3所示。
表3顯示了本發明之實施例10~12的銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料中各金屬成份之比例及主要載子型態。當銅取代銦使銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yCux+yZnO4+m中0.001≦x≦0.1,y=0,0≦m≦3時,藉由霍爾量測所得之主要載子型態為電洞,其電洞載子濃度大於1015cm-3,故可確定實施例10~12所合成之銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料為p型,如表3所示。
實施例13~14:鎂取代鎵之鎂摻雜氧化銦鎵鋅系
金屬氧化物半導體材料
首先,在保持金屬總含量為0.5 mol的條件下,將0.167 mol之銦鹽(In(NO3)3)、0.167 mol之鋅鹽(Zn(NO3)2)以及依照表4之化學劑量所分別秤取之數種含量比例之鎵鹽(Ga(NO3)3)及鎂鹽(Mg(NO3)2)加入濃度為1.4 N之硝酸水溶液中,並加入0.55 mol之酒石酸作為螯合劑,於常溫下混合1小時,以合成本發明之實施例13~14。上述反應係在混合金屬離子析出後,藉由螯合劑將銦、鎵、鋅、鎂結合而形成一金屬錯合物。
隨後,升溫至155℃,蒸發溶液中的液體使溶液成為凝膠態,並進行乾燥步驟將其乾燥成粉狀,繼而進行燒結步驟使上述金屬錯合物氧化以形成金屬氧化物半導體粉體,此金屬氧化物半導體具有In1-xGa1-yMgx+yZnO4+m之化學式,其中x=0,0.001≦y≦0.1,0≦m≦3。
接著,進行陶瓷製程之模壓、射出、冷均壓、注漿等相關製程,以製作鎂取代鎵之鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料的塊材或靶材。
藉由對合成出的鎂摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行X光能量散射光譜分析,可得到鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料中金屬成份元素的含量(莫耳比),如表4所示,以及非金屬成份元素之氧的含量(莫耳比),其在實施例13~14中皆落在0≦m≦3之範圍內。再者,藉由對合成出的鎂摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行霍爾量測,可得到鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料之主要載子型態等特性,如表4所示。
表4顯示了本發明之實施例13~14的鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料中各金屬成份之比例及主要載子型態。當鎂取代鎵使鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yMgx+yZnO4+m中x=0,0.001≦y≦0.1,0≦m≦3時,藉由霍爾量測所得之主要載子型態為電洞,其電洞載子濃度大於1015cm-3,故可確定實施例13~14所合成之鎂摻雜氧化銦鎵鋅系金屬氧化物半導體材料為p型,如表4所示。
實施例15~18:銅取代鎵之銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料
首先,在保持金屬總含量為0.5 mol的條件下,將0.167 mol之銦鹽(In(NO3)3)、0.167 mol之鋅鹽(Zn(NO3)2)以及依照表5之化學劑量所分別秤取之數種含量比例之鎵鹽(Ga(NO3)3)及銅鹽(Cu(NO3)2)加入濃度為1.4 N之硝酸水溶液中,並加入0.55 mol之酒石酸作為螯合劑,於常溫下混合1小時,以合成本發明之實施例15~18。上述反應係在混合金屬離子析出後,藉由螯合劑將銦、鎵、鋅、銅結合而形成一金屬錯合物。
隨後,升溫至155℃,蒸發溶液中的液體使溶液成為凝膠態,並進行乾燥步驟將其乾燥成粉狀,繼而進行燒結步驟使上述金屬錯合物氧化以形成金屬氧化物半導體粉體,此金屬氧化物半導體具有In1-xGa1-yCux+yZnO4+m之化學式,其中
x=0,0.025≦y≦0.1,0≦m≦3。
接著,進行陶瓷製程之模壓、射出、冷均壓、注漿等相關製程,以製作銅取代鎵之銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料的塊材或靶材。
藉由對合成出的銅摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行X光能量散射光譜分析,可得到銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料中金屬成份元素的含量(莫耳比),如表5所示,以及非金屬成份元素之氧的含量(莫耳比),其在實施例15~18中皆落在0≦m≦3之範圍內。再者,藉由對合成出的銅摻雜氧化銦鎵鋅系金屬氧化物半導體塊材或靶材進行霍爾量測,可得到銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料之主要載子型態等特性,如表5所示。
表5顯示了本發明之實施例15~18的銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料中各金屬成份之比例及主要載子型態。當銅取代鎵使銅摻雜氧化銦鎵鋅系金屬氧化物半導體材料In1-xGa1-yCux+yZnO4+m中x=0,0.025≦y≦0.1,0≦m≦3時,藉由霍爾量測所得之主要載子型態為電洞,其電洞載子濃度大於1015cm-3,故可確定實施例15~18所合成之銅摻雜氧化
銦鎵鋅系金屬氧化物半導體材料為p型,如表5所示。
雖然本揭露已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
Claims (6)
- 一種p型金屬氧化物半導體材料,具有化學式:In1-xGa1-yMx+yZnO4+m,其中M為鈣(Ca)、鎂(Mg)或銅(Cu),0<x+y≦0.1,0≦m≦3,且0<x,0≦y或0≦x,0<y,其中該p型金屬氧化物半導體材料之電洞載子濃度介於1×1015~6×1019cm-3之間。
- 如申請專利範圍第1項所述之p型金屬氧化物半導體材料,其中M為鈣(Ca),0.0005≦x≦0.1,y=0。
- 如申請專利範圍第1項所述之p型金屬氧化物半導體材料,其中M為鎂(Mg),0.001≦x≦0.005,y=0。
- 如申請專利範圍第1項所述之p型金屬氧化物半導體材料,其中M為銅(Cu),0.001≦x≦0.1,y=0。
- 如申請專利範圍第1項所述之p型金屬氧化物半導體材料,其中M為鎂(Mg),x=0,0.001≦y≦0.1。
- 如申請專利範圍第1項所述之p型金屬氧化物半導體材料,其中M為銅(Cu),x=0,0.025≦y≦0.1。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102134951A TWI495615B (zh) | 2012-09-28 | 2013-09-27 | p型金屬氧化物半導體材料 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101135764 | 2012-09-28 | ||
TW102134951A TWI495615B (zh) | 2012-09-28 | 2013-09-27 | p型金屬氧化物半導體材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201412642A true TW201412642A (zh) | 2014-04-01 |
TWI495615B TWI495615B (zh) | 2015-08-11 |
Family
ID=50384322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102134951A TWI495615B (zh) | 2012-09-28 | 2013-09-27 | p型金屬氧化物半導體材料 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8927986B2 (zh) |
CN (1) | CN103715234B (zh) |
TW (1) | TWI495615B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160116652A1 (en) * | 2013-06-20 | 2016-04-28 | Merck Patent Gmbh | Method for controlling the optical properties of uv filter layers |
JP6547273B2 (ja) * | 2013-12-26 | 2019-07-24 | 株式会社リコー | p型酸化物半導体、p型酸化物半導体製造用組成物、p型酸化物半導体の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
US9224599B2 (en) * | 2013-12-31 | 2015-12-29 | Industrial Technology Research Institute | P-type metal oxide semiconductor material and method for fabricating the same |
CN106458759A (zh) * | 2014-06-26 | 2017-02-22 | 住友金属矿山株式会社 | 氧化物烧结体、溅射靶及使用该靶得到的氧化物半导体薄膜 |
KR101705406B1 (ko) * | 2014-09-11 | 2017-02-10 | 경희대학교 산학협력단 | 갈륨을 포함하는 p형 산화물 반도체를 이용한 유기 발광 다이오드 및 이의 제조 방법 |
JP6415363B2 (ja) * | 2015-03-16 | 2018-10-31 | 国立大学法人室蘭工業大学 | Igzoの製造方法 |
US10566483B2 (en) * | 2015-03-17 | 2020-02-18 | Lg Electronics Inc. | Solar cell |
KR102467802B1 (ko) * | 2016-06-30 | 2022-11-16 | 가부시키가이샤 플로스피아 | 산화물 반도체 막 및 그 제조 방법 |
EP3823043A4 (en) * | 2018-07-12 | 2022-04-13 | Flosfia Inc. | SEMICONDUCTOR DEVICE |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003179242A (ja) | 2001-12-12 | 2003-06-27 | National Institute Of Advanced Industrial & Technology | 金属酸化物半導体薄膜及びその製法 |
US7141489B2 (en) | 2003-05-20 | 2006-11-28 | Burgener Ii Robert H | Fabrication of p-type group II-VI semiconductors |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
JP4488184B2 (ja) * | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
JP2008538164A (ja) | 2005-03-30 | 2008-10-09 | モクストロニクス,インコーポレイテッド | 金属酸化物半導体膜、構造および方法 |
KR100711203B1 (ko) | 2005-08-23 | 2007-04-24 | 한국과학기술연구원 | 산화아연을 이용한 p형-진성-n형 구조의 발광 다이오드제조방법 |
JP4560502B2 (ja) * | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
US7329915B2 (en) * | 2005-11-21 | 2008-02-12 | Hewlett-Packard Development Company, L.P. | Rectifying contact to an n-type oxide material or a substantially insulating oxide material |
JP2008140684A (ja) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101699968B1 (ko) * | 2006-12-13 | 2017-01-26 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟 및 산화물 반도체막 |
EP2115770B1 (en) | 2007-02-05 | 2018-10-10 | Universidade Nova de Lisboa | ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS |
TWI435846B (zh) | 2008-01-31 | 2014-05-01 | Univ Nat Chunghsing | A method for preparing transparent conductive zinc oxide thin film by dipping stitch doping technique |
TWI385716B (zh) | 2008-11-28 | 2013-02-11 | Univ Nat Chiao Tung | 以水溶液製備金屬氧化物薄膜之方法 |
TWI388506B (zh) | 2008-12-16 | 2013-03-11 | Ind Tech Res Inst | P型金屬氧化物半導體材料之製備方法 |
JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Igzo系酸化物材料及びigzo系酸化物材料の製造方法 |
JP2011181722A (ja) | 2010-03-02 | 2011-09-15 | Idemitsu Kosan Co Ltd | スパッタリングターゲット |
CN102290443B (zh) * | 2011-07-28 | 2016-03-30 | 京东方科技集团股份有限公司 | 一种非晶薄膜晶体管及其制备方法 |
-
2013
- 2013-09-27 CN CN201310447540.XA patent/CN103715234B/zh active Active
- 2013-09-27 TW TW102134951A patent/TWI495615B/zh active
- 2013-09-27 US US14/039,188 patent/US8927986B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8927986B2 (en) | 2015-01-06 |
US20140091302A1 (en) | 2014-04-03 |
CN103715234A (zh) | 2014-04-09 |
TWI495615B (zh) | 2015-08-11 |
CN103715234B (zh) | 2016-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI495615B (zh) | p型金屬氧化物半導體材料 | |
Wei et al. | Synthesis and characterization of nanostructured stannite Cu2ZnSnSe4 and Ag2ZnSnSe4 for thermoelectric applications | |
Lyons et al. | Carbon as a shallow donor in transparent conducting oxides | |
Sanctis et al. | Toward an understanding of thin-film transistor performance in solution-processed amorphous zinc tin oxide (ZTO) thin films | |
Liang | Thermoelectric transport properties of Fe-enriched ZnO with high-temperature nanostructure refinement | |
Peng et al. | Structure, binding energy and optoelectrical properties of p-type CuI thin films: The effects of thickness | |
Valério et al. | Preparation and structural-optical characterization of dip-coated nanostructured Co-doped ZnO dilute magnetic oxide thin films | |
Pujar et al. | Trends in low‐temperature combustion derived thin films for solution‐processed electronics | |
Tsay et al. | Improved electrical properties of p-type CuGaO2 semiconductor thin films through Mg and Zn doping | |
Pham et al. | DFT+ U studies of Cu doping and p-type compensation in crystalline and amorphous ZnS | |
Park et al. | Improvement of bias stability of oxyanion-incorporated aqueous sol–gel processed indium zinc oxide TFTs | |
Dung et al. | Experimental and theoretical studies on induced ferromagnetism of new (1− x) Na0. 5Bi0. 5TiO3+ x BaFeO3− δ solid solution | |
Wang et al. | Gallium-doped zinc oxide nanostructures for tunable transparent thermoelectric films | |
Gayner et al. | Effects of Co-doping and microstructure on charge carrier energy filtering in thermoelectric titanium-doped zinc aluminum oxide | |
Chander Joshi et al. | Sol–gel-derived Cu-doped ZnO thin films for optoelectronic applications | |
TWI534089B (zh) | p型金屬氧化物半導體材料及其製造方法 | |
Hui et al. | Low resistivity p-type Zn1− xAlxO: Cu2O composite transparent conducting oxide thin film fabricated by sol–gel method | |
Liao et al. | Synergistic effect of co-doping of nano-sized ZnO and Nb2O5 on the enhanced nonlinear coefficient of TiO2 varistor with low breakdown voltage | |
Lee et al. | Conductive polymer-assisted metal oxide hybrid semiconductors for high-performance thin-film transistors | |
Jayaram et al. | Structural and physical property analysis of ZnO–SnO2–In2O3–Ga2O3 quaternary transparent conducting oxide system | |
Nayek et al. | Ferromagnetic property of copper doped ZnO: A first-principles study | |
Liau et al. | Effect of indium-and gallium-doped ZnO fabricated through sol-gel processing on energy level variations | |
Musaeva et al. | Effect of oxygen content and nonstoichiometry defects on the phase transformations in manganites of the La 0.65 Sr 0.35 Mn 1− x− y Ni x Ti y O 3+ γ system | |
Lin et al. | Effects of Mg doping on structural and optoelectronic properties of p-type semiconductor CuCrO2 thin films | |
Kanmani et al. | Influence of Ti dopant on the properties and dye sensitized solar cell performance of ZnO chunk-shaped nanostructures |