TW201350265A - 印刷式化學機械研磨墊 - Google Patents

印刷式化學機械研磨墊 Download PDF

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TW201350265A
TW201350265A TW102112533A TW102112533A TW201350265A TW 201350265 A TW201350265 A TW 201350265A TW 102112533 A TW102112533 A TW 102112533A TW 102112533 A TW102112533 A TW 102112533A TW 201350265 A TW201350265 A TW 201350265A
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巴札拉吉菲
秦貝瑞李
李泰倫斯Ｙ
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應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009—Tools not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B29C64/205—Means for applying layers
    • B29C64/209—Heads; Nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C64/30—Auxiliary operations or equipment
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    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00—Processes of additive manufacturing
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    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y50/00—Data acquisition or data processing for additive manufacturing
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    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
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    • B29K2075/00—Use of PU, i.e. polyureas or polyurethanes or derivatives thereof, as moulding material
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Abstract

本發明提供一種製造研磨墊之研磨層的方法，該方法包括使用三維(3D)印刷機成功地沉積複數個層，其中該方法係藉由從噴頭噴出墊材料前驅物，並固化該墊材料前驅物以形成已固化的墊材料而沉積該複數個研磨層的每一層。

Description

印刷式化學機械研磨墊
本發明係關於化學機械研磨期間所使用的研磨墊。
通常藉由在矽晶圓上循序沉積導體層、半導體層或絕緣層而在基板上形成積體電路。許多不同製造製程皆需要對基板上的膜層進行平坦化。舉例言之，就某些應用而言，例如欲研磨金屬材料在圖案化層的溝槽中形成介層窗、插銷和線路時，會對上層進行平坦化直到暴露出圖案化層的頂表面。在其他應用上，例如介電層平坦化以用於光微影技術中，則會研磨上層，直到在下層上保留期望厚度的上層。
化學機械研磨(CMP)是公認的平坦化方法之一。此平坦化方法通常要求將基板安裝在承載頭上。通常使基板的暴露表面抵靠著旋轉中的研磨墊。承載頭在基板上提供可控制的負載(load)以推擠基板使該基板抵靠著研磨墊的表面。通常會供應研磨液(例如，含有研磨粒的漿料)至研磨墊的表面。
化學機械研磨製程的其中一目標是使研磨均勻一致。若以不同速率研磨基板的不同區域，則基板的某些區域可能被去除過多材料(「過度研磨」)或去除太少材料(「研磨 不足」)。
習知的研磨墊包括「標準」墊和固定研磨粒墊。標準墊具有聚胺甲酸乙酯(polyurethane)研磨層，且該聚胺甲酸乙酯研磨層具有耐磨的粗糙表面，且該標準墊亦可包含可壓縮背托層(compressible backing layer)。相較之下，固定研磨粒墊具有固定在固定介質(containment media)中的研磨粒，且該固定研磨粒墊通常可支撐在不可壓縮背托層(incompressible backing layer)上。
一般利用模塑(molding)、澆鑄(casting)或燒結(sintering)聚胺甲酸乙酯材料製成研磨墊。對於模塑成形，例如利用射出成形法一次可能只生產一個研磨墊。在澆鑄法的例子中，使液體前驅物注模並硬化成塊，隨後將該硬塊切割成個別墊片。隨後此等墊片可加工成最終厚度。可在研磨表面中加工形成溝槽，或作為射出成形製程的一部分在研磨表面中形成溝槽。
除了平坦化之外，研磨墊亦可用於完工作業，例如用於拋光。
為提供研磨的均勻一致性，研磨墊需與正進行研磨的基板形成均勻接觸，從而能夠在整個基板表面上施加均勻的壓力。墊的厚度差異可能在整個基板表面上產生不均勻的壓力。即使是厚度上的小差異也會導致所施加壓力的變化，且從而造成不均勻的去除作用以及較多的缺陷，例如在基板表面上造成微細刮痕。此種作用對於硬研磨墊而言更加嚴 重，並且在低壓力研磨製程中亦較為嚴重。儘管軟研磨墊可調適較大的厚度差異，但在墊中形成溝槽的製程對於軟研磨墊而言更容易產生不均勻性。
要改善厚度均勻性的研磨墊製造技術是使用3D印刷製程。在3D印刷製程中，以漸進方式沉積墊前驅物(例如，粉末)的薄層，並使墊前驅物薄層合併(fused)成完整的三維(3D)研磨墊。
在一態樣中，製造研磨墊之研磨層的方法包括使用三維(3D)印刷機成功沉積複數個層，該方法係藉由噴嘴噴出墊材料前驅物，且固化該墊材料前驅物以形成已固化的墊材料而沉積該複數個研磨層的每一層。
本發明之實施方案可包括以下特徵的其中一個或多個特徵。該複數個層之每一層的厚度可小於研磨墊之總厚度的50%。該複數個層之每一層的厚度可小於研磨墊之總厚度的1%。可藉由在電腦上執行三維(3D)繪圖程式控制墊材料前驅物的射出以在該複數個層的至少一些層中形成圖案而在該研磨層中形成凹槽。該等凹槽可包括研磨墊之總水平表面積的10%至75%。介於該等凹槽之間的台地部分(plateaus)可具有0.1毫米(mm)至2.5毫米的橫向尺寸。該等凹槽可具有0.25毫米至1.5毫米的深度。該等凹槽可具有0.1毫米至2毫米的最寬橫向(lateral)尺寸。該等凹槽的形狀可塑造成圓柱形、平頭角錐形或稜柱形之其中一者或多者。固化(solidifying)該墊材料前驅物的步驟可包括硬化(curing)該墊材料前驅物。硬化該墊材料前驅物的步驟可包括紫外線(UV)硬化。墊材料前驅 物可包括胺甲酸乙酯單體(urethane monomer)。該已固化的墊材料可包括聚胺甲酸乙酯(polyurethane)。可於該已固化的墊材料內提供研磨粒。研磨粒可為金屬氧化物顆粒。可使用3D印刷機成功沉積複數個層以形成研磨墊的背托層。形成背托層的步驟可包括硬化該背托層之複數個層，且用於硬化該背托層之該複數個層的硬化量與硬化該研磨層之該等複數個層的硬化量不同。形成該背托層的步驟可包括噴出材料，且該材料與該墊前驅物材料不同。該已固化的研磨材料所具有的硬度可介於約40蕭氏D型硬度(Shore D)至80蕭氏D型硬度之間。該墊材料前驅物可為已熔化的墊材料，且固化該墊材料前驅物的步驟可包括冷卻該已熔化的墊材料。
本發明的潛在優點可包括下述一或多項優點。所製造的研磨墊可具有極高的公差(tolerance)，即具有良好的厚度均勻性。可在研磨墊中形成溝槽而不會使厚度均勻性產生畸變。改善整個基板上的研磨均勻性，尤其是改善於低壓力(例如，低於0.8 psi，或甚至低於0.5 psi或0.3 psi)下整個基板上的研磨均勻性。本發明之墊製造製程適用於不同的研磨墊構造和溝槽圖案。並可更快且更便宜地製造研磨墊。
附圖及以下內容陳述一或多個實施方案的細節。由本案說明內容、附圖及申請專利範圍將可理解其他特徵、目標和優點。
10‧‧‧研磨站
14‧‧‧基板
16‧‧‧旋轉臺
18‧‧‧研磨墊
20‧‧‧背托層
22‧‧‧研磨層
24‧‧‧研磨表面
26‧‧‧溝槽
28‧‧‧研磨粒/黏著層
29‧‧‧基質
30‧‧‧研磨液
32‧‧‧複合式漿料/清洗臂32
34‧‧‧承載頭
36‧‧‧承載件驅動軸
38‧‧‧軸
50‧‧‧墊前驅物材料層
50a‧‧‧第一層
50b‧‧‧後續沉積層
51‧‧‧支座
52‧‧‧液滴
54‧‧‧噴嘴
55‧‧‧印刷機
56‧‧‧已固化的材料
60‧‧‧電腦
第1A圖是示例性研磨墊的概要側視剖面圖。
第1B圖是另一示例性研磨墊的概要側視剖面圖。
第1C圖是又另一示例性研磨墊的概要側視剖面圖。
第2圖是化學機械研磨站的概要側視局部剖面圖。
第3圖圖示基板與第1A圖之研磨墊接觸的概要側視剖面圖。
圖中係以相同元件符號代表各圖式中的相同元件。
參閱第1A~1C圖，研磨墊18包含研磨層22。如第1A圖所示，研磨墊可以是由研磨層22所組成的單層式墊，或如第1C圖所示般，研磨墊可為包含研磨層22和至少一背托層20的多層式墊。
研磨層22可以是在研磨製程中呈惰性的材料。研磨層22的材料可為塑膠，例如聚胺甲酸乙酯(polyurethane)。在某些實施方案中，研磨層22為相對耐用且硬的材料。例如，以蕭氏D型硬度等級而言，研磨層22所具有的硬度可為約40蕭氏D型硬度至80蕭氏D型硬度，例如55蕭氏D型硬度至65蕭氏D型硬度。
如第1A圖所示，研磨層22可為由均質組成物所形成的膜層，或如第1B圖所示，研磨層22可含有固定在由塑膠材料所形成之基質29(例如，聚胺甲酸乙酯)中的研磨粒28。研磨粒28比基質29的材料要硬。研磨粒可占該研磨層的0.05重量%至75重量%。例如，研磨粒28可能少於該研磨層22的1重量%，例如少於0.1重量%。或者，研磨粒28可多於該研磨層22的10重量%，例如多於50重量%。研磨粒的材料可為金屬氧化物，例如氧化鈰(ceria)、氧化鋁 (alumina)、氧化矽(silica)或上述金屬氧化物之組合物。
在某些實施方案中，該研磨層可包含孔洞，例如小孔隙。該等孔洞可寬達50微米至100微米。
研磨層18所具有的厚度D1可為80密耳(mils)或更薄，例如可為50密耳或更薄，例如25密耳或更薄。由於調整(conditioning)製程通常將表層(cover layer)磨除，因此可選擇該研磨層22的厚度，以為該研磨墊18提供可用的壽命，例如3000次的研磨和調整循環。
在微觀尺度上，研磨層22的研磨表面24可具有粗糙的表面紋理，例如2微米至4微米的表面均方根(rms)粗糙度。例如，可使研磨層22經過研磨或調整製程以產生粗糙的表面紋理。此外，3D印刷技術可提供小且均勻一致的特徵，例如小至200微米的特徵。
儘管研磨表面24在微觀尺度上可能是粗糙的，但在研磨墊本身的宏觀尺度上，研磨層22可具有良好的厚度均勻性(此均勻性是指相對於研磨層底表面而言，研磨表面24在高度上的整體差異，而不是指刻意在該研磨層中形成之任何宏觀上的溝槽或孔洞)。例如，厚度的不均勻性可小於1密耳。
視需要，該研磨表面24的至少一部分中可形成有複數個溝槽26以用於輸送漿料。該等溝槽26可幾乎是任何圖案，例如同心圓、直線狀、格紋狀、螺旋狀及諸如此類之形狀。假若具有溝槽，則介於該等溝槽26之間的研磨表面24(即，台地部分)可例如約占研磨墊22之總水平表面積的25%至90%。因此，該等溝槽26可占該研磨墊18之總水平表 面積的10%至75%。介於該等溝槽26之間的台地部分可具有約0.1毫米至約2.5毫米的橫向寬度。
在某些實施方案中，例如，若具有背托層20時，該等溝槽26可延伸貫穿整個研磨層22。在某些實施方案中，該等溝槽26可延伸穿透該研磨層22之厚度的約20%至80%，例如40%。該等溝槽26的深度可為0.25毫米至1毫米。例如，在具有厚度為50密耳之研磨層22的研磨墊18中，該等溝槽的深度D2可為約20密耳。
背托層20可比研磨層22柔軟且較可壓縮。以蕭氏A型硬度等級而言，背托層20可具有80或更小的硬度，例如可具有約60蕭氏A型硬度。背托層20可比研磨層22厚、比研磨層22薄或與研磨層22具有相同厚度。
例如，該背托層可為開放孔型泡棉(open-cell foam)或封閉孔型泡棉(closed-cell foam)，例如含有孔隙的聚胺甲酸乙酯或聚矽氧(polysilicone)，使得當處於壓力下時，該等孔崩塌且該背托層壓縮。背托層的合適材料為購自羅傑斯公司(Rogers Coroperation，位於美國康乃迪克州羅傑斯市)的PORON 4701-30或購自羅門哈斯公司(Rohm & Haas)的SUBA-IV。可藉由選擇該層的材料和孔隙度而調整背托層的硬度。或者，可使用與該研磨層相同的前驅物和相同孔隙度形成該背托層20，但使該背托層20具有不同的硬化程度且從而具有不同硬度。
現回到第2圖，可於CMP設備的研磨站10處研磨一或多個基板14。在美國專利第5,738,574號中可找到對於適 當研磨設備的描述，且該案內容以引用方式全文併入本案。
研磨站10可包含旋轉臺(platen)16，且研磨墊18放置在旋轉臺16上。研磨步驟期間，可利用漿料供應埠或複合式漿料/清洗臂(combined slurry/rinse arm)32供應研磨液30(例如，研磨漿料)至研磨墊18的表面。研磨液30可含有研磨粒、酸鹼度調整劑或化學活性成分。
利用承載頭34固持基板14並使基板14抵靠著研磨墊18。承載頭34懸掛在支撐結構(例如，旋轉架)上，並且利用承載件驅動軸36連接該承載頭34與承載頭旋轉馬達，使得該承載頭可繞著軸38旋轉。在研磨液30存在的情況下使研磨墊18與基板14進行相對運動以研磨該基板14。
參閱第3圖，至少使用3D印刷製程製造該研磨墊18的研磨層22。製造製程期間，以漸進方式沉積和融合(fused)多個薄材料層。例如，可從液滴噴出式印刷機55的噴嘴54噴出墊前驅物材料的液滴52以形成層50。液滴噴出式印刷機55類似於噴墨印刷機，但使用墊前驅物材料，而非使用墨水。噴嘴54如箭頭A所示般移動而橫越支座51。
就所沉積的第一層50a而言，噴嘴54可噴射在支座51上。就後續沉積層50b而言，噴嘴54可噴射在已固化的材料56上。待各層固化之後，接著在先前沉積的層上沉積新的層，直到完整的三維(3D)研磨層22製造完成。利用噴嘴54依據電腦60上執行之3D繪圖電腦程式中所儲存的圖案噴塗每一層。每一層50皆小於研磨層22之總厚度的50%，例如小於10%，例如小於5%，例如小於1%。
支座51可為剛性底座或為撓性膜，例如，聚四氟乙烯層(polytetrafluoroethylene，PTFE)。若支座51為薄膜，則該支座51可成為研磨墊18的一部分。例如，支座51可為背托層20或為介於背托層20和研磨層22之間的層。或者，可從支座51上卸除研磨層22。
可利用聚合反應達成固化作用。例如，墊前驅物材料層50可為單體，並可利用紫外線(UV)硬化法使該單體於原位上進行聚合反應。可一旦沉積該墊前驅物材料，便立即使該墊前驅物材料有效硬化，或可先沉積整個墊前驅物材料層50，且隨後使整個墊前驅物材料層同時硬化。
然而，有數種不同技術可達成3D印刷。例如，液滴52可為熔化的聚合物，並當冷卻時該聚合物會固化。或者，使用該印刷機噴塗粉末層並將黏合劑材料液滴噴在該粉末層上。在此情況下，該粉末可含有添加劑，例如含有研磨粒22。
3D印刷方法消除對於製造昂貴且耗時之模具的需求。3D印刷方法亦免於使用數個習知之墊製造步驟(例如，模塑、澆鑄及機械加工)。此外，由於逐層印刷的方式能夠達成緊密對準公差(tight tolerance)。此外，藉由簡單改變儲存在3D繪圖電腦程式中的圖案，便可使用一個印刷系統(包含印刷機55和電腦60)製造各種不同研磨墊。
在某些實施方案中，亦可使用3D印刷製程製造該背托層20。例如，可利用印刷機55以不間斷的操作方式製造背托層20和研磨層22。藉由使用不同的硬化量(例如不同的UV輻射強度)可使背托層20的硬度與研磨層22的硬度不同。
在其他實施方案中，使用習知製程製造該背托層20，且隨後將該背托層固定於研磨層22。例如，可利用薄黏著層28(例如，感壓式黏著劑)將研磨層22固定於背托層20。
現已描述諸多實施方案。然而，應理解尚可做出各種修飾。例如，研磨墊或承載頭或兩者皆能移動以提供研磨表面和基板之間的相對運動。研磨墊可為圓形或某些其他形狀。可於研磨墊的底表面上施用黏著層以將該墊固定於旋轉臺上，並且將該研磨墊放置於該轉盤上之前，可利用可去除的襯層覆蓋該黏著層。此外，儘管文中使用諸多垂直定位用語，但需理解，該研磨表面和基板可在垂直方向或某些其他方向上顛倒設置。
因此，其他實施方案亦落入後附請求項之範圍中。
18‧‧‧研磨墊
22‧‧‧研磨層
24‧‧‧研磨表面
26‧‧‧溝槽

Claims (24)

  1. 一種製造一研磨墊之一研磨層的方法，該方法包括以下步驟：使用一三維(3D)印刷機成功沉積複數個層，該方法係藉由一噴嘴噴出一墊材料前驅物，且固化該墊材料前驅物以形成一已固化的墊材料而沉積該複數個研磨層的每一層。
  2. 如請求項1所述之方法，其中該複數個層之每一層的厚度小於該研磨層之一總厚度的50%。
  3. 如請求項2所述之方法，其中該複數個層之每一層的厚度小於該研磨層之一總厚度的1%。
  4. 如請求項1所述之方法，包括藉由在一電腦上執行3維(3D)繪圖程式控制該墊材料前驅物的射出以在該複數個層之至少一些層中形成一圖案而在該研磨層中形成凹槽。
  5. 如請求項4所述之方法，其中該等凹槽包括該研磨墊之總水平表面積的10%至75%。
  6. 如請求項4所述之方法，其中介於該等凹槽之間的台地部分具有0.1毫米至2.5毫米的一橫向尺寸。
  7. 如請求項4所述之方法，其中該等凹槽具有0.25毫米至 1.5毫米的一深度。
  8. 如請求項4所述之方法，其中該等凹槽具有0.1毫米至2毫米的一最寬橫向尺寸。
  9. 如請求項4所述之方法，其中該等凹槽的形狀係塑造成一圓柱形、一平頭角錐形或一稜柱形之其中一者或多者。
  10. 如請求項1所述之方法，其中固化該墊材料前驅物的步驟包括硬化(curing)該墊材料前驅物。
  11. 如請求項10所述之方法，其中硬化該墊材料前驅物的步驟包括紫外線(UV)硬化。
  12. 如請求項11所述之方法，其中該墊材料前驅物包括胺甲酸乙酯單體(urethane monomer)。
  13. 如請求項1所述之方法，其中該已固化的墊材料包括聚胺甲酸乙酯(polyurethane)。
  14. 如請求項13所述之方法，其中聚胺甲酸乙酯具有介於約40蕭氏D型硬度至80蕭氏D型硬度之間的一硬度。
  15. 如請求項1所述之方法，包括於該已固化的墊材料內提 供研磨粒。
  16. 如請求項15所述之方法，其中該研磨粒包括金屬氧化物顆粒。
  17. 如請求項16所述之方法，其中該等金屬氧化物顆粒構成該研磨層的0.05重量%至75重量%。
  18. 如請求項17所述之方法，其中該金屬氧化物顆粒構成該研磨層的小於1重量%。
  19. 如請求項15所述之方法，其中該等研磨粒包括氧化矽(silica)、氧化鋁(alumina)、氧化鈰(cerium oxide)或上述化合物之組合物。
  20. 如請求項1所述之方法，包括使用該3D印刷機成功沉積複數個層以形成該研磨墊的一背托層。
  21. 如請求項20所述之方法，其中形成該背托層的步驟包括硬化該背托層之該複數個層，且用於硬化該背托層之該複數個層的硬化量與硬化該研磨層之該等複數個層的硬化量不同。
  22. 如請求項20所述之方法，其中形成該背托層的步驟包括 噴出一材料，且該材料與該墊前驅物材料不同。
  23. 如請求項1所述之方法，其中該已固化的研磨材料具有介於約40蕭氏D型硬度至80蕭氏D型硬度之間的一硬度。
  24. 如請求項1所述之方法，其中該墊材料前驅物包括一已熔化的墊材料，以及固化該墊材料前驅物的步驟包括冷卻該已熔化的墊材料。
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