TW201349284A - 紅外線放射元件 - Google Patents
紅外線放射元件 Download PDFInfo
- Publication number
- TW201349284A TW201349284A TW102107902A TW102107902A TW201349284A TW 201349284 A TW201349284 A TW 201349284A TW 102107902 A TW102107902 A TW 102107902A TW 102107902 A TW102107902 A TW 102107902A TW 201349284 A TW201349284 A TW 201349284A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- heating element
- infrared radiation
- substrate
- radiation element
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 243
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims description 128
- 238000010438 heat treatment Methods 0.000 claims description 102
- 125000006850 spacer group Chemical group 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 32
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 27
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 24
- 230000035882 stress Effects 0.000 description 19
- 239000002344 surface layer Substances 0.000 description 14
- 229910052732 germanium Inorganic materials 0.000 description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 13
- 229910001936 tantalum oxide Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
- G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012112753A JP2013238538A (ja) | 2012-05-16 | 2012-05-16 | 赤外線放射素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201349284A true TW201349284A (zh) | 2013-12-01 |
Family
ID=49583374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102107902A TW201349284A (zh) | 2012-05-16 | 2013-03-06 | 紅外線放射元件 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2013238538A (ja) |
| TW (1) | TW201349284A (ja) |
| WO (1) | WO2013171941A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9410849B2 (en) * | 2014-01-21 | 2016-08-09 | Kidde Technologies, Inc. | Apparatuses, systems, and methods controlling testing optical fire detectors |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000236110A (ja) * | 1999-02-15 | 2000-08-29 | Anritsu Corp | 赤外線放射素子 |
| JP4396464B2 (ja) * | 2003-10-27 | 2010-01-13 | パナソニック電工株式会社 | 赤外線放射素子およびそれを用いたガスセンサ |
| JP2009210289A (ja) * | 2008-02-29 | 2009-09-17 | Panasonic Electric Works Co Ltd | 赤外線検出システム |
| JP5368847B2 (ja) * | 2009-03-26 | 2013-12-18 | パナソニック株式会社 | 赤外線放射素子 |
| JP5374293B2 (ja) * | 2009-09-18 | 2013-12-25 | パナソニック株式会社 | 赤外線式ガス検知器 |
-
2012
- 2012-05-16 JP JP2012112753A patent/JP2013238538A/ja active Pending
-
2013
- 2013-02-28 WO PCT/JP2013/001253 patent/WO2013171941A1/ja active Application Filing
- 2013-03-06 TW TW102107902A patent/TW201349284A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013171941A1 (ja) | 2013-11-21 |
| JP2013238538A (ja) | 2013-11-28 |
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