TW201340166A - 一種具有雙外殼的等離子體處理裝置 - Google Patents
一種具有雙外殼的等離子體處理裝置 Download PDFInfo
- Publication number
- TW201340166A TW201340166A TW101145126A TW101145126A TW201340166A TW 201340166 A TW201340166 A TW 201340166A TW 101145126 A TW101145126 A TW 101145126A TW 101145126 A TW101145126 A TW 101145126A TW 201340166 A TW201340166 A TW 201340166A
- Authority
- TW
- Taiwan
- Prior art keywords
- cavity
- processing apparatus
- plasma processing
- auxiliary gas
- chamber
- Prior art date
Links
- 230000009977 dual effect Effects 0.000 title abstract description 3
- 239000007789 gas Substances 0.000 claims abstract description 86
- 239000012495 reaction gas Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000003570 air Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000036470 plasma concentration Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 206010035148 Plague Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210091577.9A CN103367089B (zh) | 2012-03-30 | 2012-03-30 | 一种具有双外壳的等离子体处理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201340166A true TW201340166A (zh) | 2013-10-01 |
| TWI476810B TWI476810B (enExample) | 2015-03-11 |
Family
ID=49368199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101145126A TW201340166A (zh) | 2012-03-30 | 2012-11-30 | 一種具有雙外殼的等離子體處理裝置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103367089B (enExample) |
| TW (1) | TW201340166A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369602B (zh) * | 2016-05-12 | 2019-02-19 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
| CN112117176B (zh) * | 2019-06-20 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备及等离子体处理系统 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3131865B2 (ja) * | 1994-09-05 | 2001-02-05 | 東京エレクトロン株式会社 | プラズマ成膜装置 |
| US6899787B2 (en) * | 2001-06-29 | 2005-05-31 | Alps Electric Co., Ltd. | Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system |
| JP4186536B2 (ja) * | 2002-07-18 | 2008-11-26 | 松下電器産業株式会社 | プラズマ処理装置 |
| US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
| KR20050001831A (ko) * | 2003-06-26 | 2005-01-07 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| KR100702831B1 (ko) * | 2004-08-20 | 2007-04-03 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
| CN100516291C (zh) * | 2005-10-14 | 2009-07-22 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
| TWI292921B (en) * | 2006-01-27 | 2008-01-21 | Advanced Micro Fab Equip Inc | A plasma processing apparatus |
| JP5222598B2 (ja) * | 2008-03-25 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマ処理装置及び給電棒 |
| TWM370181U (en) * | 2009-07-03 | 2009-12-01 | Advanced Micro Fab Equip Inc | A plasma processing apparatus |
| JP5457754B2 (ja) * | 2009-08-07 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | 透過型電極体を用いたプラズマ処理装置 |
-
2012
- 2012-03-30 CN CN201210091577.9A patent/CN103367089B/zh active Active
- 2012-11-30 TW TW101145126A patent/TW201340166A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN103367089B (zh) | 2016-04-06 |
| CN103367089A (zh) | 2013-10-23 |
| TWI476810B (enExample) | 2015-03-11 |
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