CN103367089B - 一种具有双外壳的等离子体处理装置 - Google Patents

一种具有双外壳的等离子体处理装置 Download PDF

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Publication number
CN103367089B
CN103367089B CN201210091577.9A CN201210091577A CN103367089B CN 103367089 B CN103367089 B CN 103367089B CN 201210091577 A CN201210091577 A CN 201210091577A CN 103367089 B CN103367089 B CN 103367089B
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cavity
processing apparatus
plasma processing
gas
assist gas
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Chinese (zh)
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CN103367089A (zh
Inventor
王晔
梁洁
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Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN201210091577.9A priority Critical patent/CN103367089B/zh
Priority to TW101145126A priority patent/TW201340166A/zh
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  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
CN201210091577.9A 2012-03-30 2012-03-30 一种具有双外壳的等离子体处理装置 Active CN103367089B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201210091577.9A CN103367089B (zh) 2012-03-30 2012-03-30 一种具有双外壳的等离子体处理装置
TW101145126A TW201340166A (zh) 2012-03-30 2012-11-30 一種具有雙外殼的等離子體處理裝置

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CN201210091577.9A CN103367089B (zh) 2012-03-30 2012-03-30 一种具有双外壳的等离子体处理装置

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CN103367089A CN103367089A (zh) 2013-10-23
CN103367089B true CN103367089B (zh) 2016-04-06

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CN (1) CN103367089B (enExample)
TW (1) TW201340166A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107369602B (zh) 2016-05-12 2019-02-19 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN112117176B (zh) * 2019-06-20 2023-03-07 中微半导体设备(上海)股份有限公司 等离子体处理设备及等离子体处理系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878346A (ja) * 1994-09-05 1996-03-22 Tokyo Electron Ltd プラズマ成膜装置
CN1675738A (zh) * 2002-08-09 2005-09-28 应用材料有限公司 具双频偏压源及单频等离子体产生源的蚀刻腔室
CN101546698A (zh) * 2008-03-25 2009-09-30 东京毅力科创株式会社 等离子体处理装置和供电棒

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6899787B2 (en) * 2001-06-29 2005-05-31 Alps Electric Co., Ltd. Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
KR20050001831A (ko) * 2003-06-26 2005-01-07 삼성전자주식회사 플라즈마 처리 장치
KR100702831B1 (ko) * 2004-08-20 2007-04-03 주식회사 에이디피엔지니어링 플라즈마 처리장치
CN100516291C (zh) * 2005-10-14 2009-07-22 中微半导体设备(上海)有限公司 等离子体处理装置
TWI292921B (en) * 2006-01-27 2008-01-21 Advanced Micro Fab Equip Inc A plasma processing apparatus
TWM370181U (en) * 2009-07-03 2009-12-01 Advanced Micro Fab Equip Inc A plasma processing apparatus
JP5457754B2 (ja) * 2009-08-07 2014-04-02 株式会社日立ハイテクノロジーズ 透過型電極体を用いたプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878346A (ja) * 1994-09-05 1996-03-22 Tokyo Electron Ltd プラズマ成膜装置
CN1675738A (zh) * 2002-08-09 2005-09-28 应用材料有限公司 具双频偏压源及单频等离子体产生源的蚀刻腔室
CN101546698A (zh) * 2008-03-25 2009-09-30 东京毅力科创株式会社 等离子体处理装置和供电棒

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CN103367089A (zh) 2013-10-23
TWI476810B (enExample) 2015-03-11
TW201340166A (zh) 2013-10-01

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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.

CP01 Change in the name or title of a patent holder