TW201333985A - Transparent electrically conductive film, substrate having transparent electrically conductive film attached thereto, method for producing the same, and ips liquid crystal cell, capacitive touch panel - Google Patents

Abstract

Provided are: a high-transmittance transparent electrically conductive film, which can achieve a high resistivity on the order of several hundred milliohms/sq. and undergoes little change in properties over time; a substrate having the transparent electrically conductive film attached thereto; an IPS liquid crystal cell; a capacitive touch panel; and a method for producing a substrate having a transparent electrically conductive film attached thereto. A transparent electrically conductive film (3) formed on a glass substrate, which contains indium tin oxide (ITO) as the main material, contains 7.2 to 11.2 at% of silicon, and has a specific resistance of the order of 100 to 103 Omega.cm and a transmittance of 98% or more at a wavelength of 550 nm.

Description

Transparent conductive film, substrate with transparent conductive film, IPS liquid crystal cell, electrostatic capacitance type touch panel, and manufacturing method of substrate with transparent conductive film

The present invention relates to a high-resistance and high-penetration transparent conductive film, a substrate with a transparent conductive film, an IPS liquid crystal cell using the transparent conductive film and a substrate with a transparent conductive film, a capacitive touch panel, And a method of manufacturing the substrate with the transparent conductive film.

In an in-cell type capacitive touch panel in which a detecting electrode of a touch panel is incorporated in a liquid crystal cell, in order to prevent low-frequency noise in the vicinity of the display from obstructing the operation of the display, electromagnetic shielding and prevention must be provided. A transparent conductive film with electrostatic function. However, when the resistance of the transparent conductive film is low, the high frequency signal generally used for capacitive touch sensing is also shielded.

Therefore, in order to function as a shield of the display, a high-frequency transparent conductive film is required to penetrate the high-frequency signal for sensing the touch phenomenon, and a high-resistance type is required for the embedded capacitive touch panel. The demand for high penetration membranes has increased. Although it is not as high as the resistance value corresponding to the demand, in the use of the resistive touch panel, various attempts have been made to find a high-resistance, high-penetration transparent conductive film, a method for manufacturing the same, and the like (for example, a patent) Documents 1 and 2).

Patent Document 1 discloses a transparent conductive film which has indium oxide containing bismuth as a main component and has a specific resistance in the range of 0.9 to 1.8 × 10 ^-3 Ω ‧ cm.

Moreover, in Patent Document 2, a film forming method of a tin-doped indium oxide film is disclosed, in which the tin content in the film is 10 to 40% by weight relative to indium by a sputtering method or a pyrosol method. The film thickness is 150 Å or more, and the sheet resistance of the film is 200 to 1000 Ω/sq. The sheet resistance uniformity is 6.1% or less, and the specific resistance is 5 × 10 ^-4 Ω ‧ cm or more.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-174168

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-197839

However, in the inventions of Patent Documents 1 and 2, the specific resistance is 10 ^-3 Ω ‧ cm, and in the case of a practical film thickness, the maximum is only about tens of K Ω / sq. The sheet resistance of the number M to several hundred MΩ/sq. is a film having a specific resistance of 10 ⁰ to 10 ³ Ω ‧ cm and a high transmittance of 90% or more.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a transparent conductive film which can stably acquire a high resistance of several hundred MΩ/sq. in order and which has little variation with time, and is provided with the transparent A substrate for a conductive film, an IPS liquid crystal cell, a capacitive touch panel, and a method of manufacturing a substrate with a transparent conductive film.

Another object of the present invention is to provide a transparent conductive film which can be formed by DC sputtering which is more advantageous in terms of productivity and stability than RF, a substrate with a transparent conductive film, and a transparent conductive film and the like. An IPS liquid crystal cell having a substrate of a transparent conductive film, a capacitive touch panel, and a method of manufacturing the substrate with the transparent conductive film.

As long as the transparent conductive film of claim 1 is used, the above problem can be solved by a transparent conductive film formed on a glass substrate containing indium tin oxide (ITO) as a main material and containing 7.2 to 11.2 at%. The specific resistance is 10 ⁰ ~ 10 ³ Ω ‧ cm, and the transmittance at a wavelength of 550 nm is 98% or more.

Since it is composed of a material containing a specific ratio of ruthenium as described above, it is possible to obtain a previously unachievable specific resistance of 10 ⁰ to 10 ³ Ω ‧ cm and a transmittance of 98% or more at a wavelength of 550 nm. Resistive, high penetration transparent conductive film.

Therefore, it is possible to provide a high-performance embedded capacitive touch panel that can function as a noise shielding body of a display while allowing a high-frequency signal that senses a touch phenomenon to pass through. When the transparent conductive film of the present invention is formed on a glass substrate, the area for detecting the touch may extend beyond the surface of the display, or the finger of the user in the vicinity of the surface may be detected near the surface without physical contact. .

Further, it is possible to realize a function of penetrating a high-frequency signal that senses a touch phenomenon while functioning as a shield of a display by an inorganic substance having a small change in performance over time, and providing an embedded static electricity having high operational reliability. Capacitive touch panel.

In this case, the substrate of the transparent conductive film is formed on the glass substrate, and the transparent conductive film of the transparent conductive film is preferably in the range of 90 to 130 Å. The resistance is 10 ⁷ ~ 10 ⁹ Ω/sq.

When the film thickness is too small, the electric resistance value tends to increase at a high temperature, and the quality at a high temperature is lowered. However, as described above, since the thickness of the transparent conductive film is set to 90 Å or more, the temperature can be made high. Almost no change over time The film. Further, since the thickness of the transparent conductive film is set to 130 Å or less, a high transmittance film having a transmittance of 98% at 550 nm can be obtained.

In this case, the IPS liquid crystal cell is provided as the request item 3, and the substrate having the transparent conductive film of claim 2 is provided. Preferably, the transparent conductive film is provided on the opposite side of the liquid crystal of the color filter side glass substrate.

Since it is configured as described above, the formation of the transparent conductive film is relatively easy, and the film defects and the like are also reduced. Therefore, an IPS liquid crystal cell having an antistatic function and a good manufacturing yield can be obtained.

In this case, as for the request item 4, a static capacitance type touch panel having the IPS liquid crystal cell of claim 3 is preferably provided with the electrostatic capacitance detecting electrode in the IPS liquid crystal cell.

Since it is configured as described above, an IPS mode and an embedded capacitive touch panel can be provided.

In this case, as for the method of manufacturing the substrate with the transparent conductive film of claim 2, it is preferable that the film thickness is 90 to 130 Å and the sheet resistance is 10 ⁷ to 10 ⁹ on the glass substrate. The above transparent conductive film of Ω/sq.

When the film thickness is in the range of the film thickness, the resistance value is stable and the change with time is small, and the transmittance can be maintained high. Further, in the range of the sheet resistance described above, it is possible to reliably detect the change in the electrostatic capacitance while maintaining the function of the antistatic function, thereby ensuring good operation as a touch panel.

At this time, as in the case of claim 6, it is preferable to use a target containing indium tin oxide (ITO) as a main material and containing 10 to 15% by weight of cerium oxide, and introducing an oxygen-added argon gas as a sputtering gas. DC magnetron sputtering forms the above transparent conductive membrane.

Since it is configured as described above, the production of a transparent conductive film having high resistance and high penetration can be easily performed, and mass production can be easily performed.

According to the present invention, a high-resistance, high-penetration transparent conductive film having a specific resistance of 10 ⁰ to 10 ³ Ω ‧ cm and having a transmittance of 98% or more at a wavelength of 550 nm can be obtained.

Therefore, it is possible to provide a high-performance embedded capacitive touch panel that can function as a shield for the noise of the display and that allows the high-frequency signal that senses the touch phenomenon to pass through. When the transparent conductive film of the present invention is formed on a glass substrate, the area for detecting the touch may extend beyond the surface of the display, or the finger of the user in the vicinity of the surface may be detected near the surface without physical contact. .

Further, it is possible to realize a function of allowing a high-frequency signal for sensing a touch phenomenon to function as a shield of a display by utilizing an inorganic substance having a small change in performance over time, thereby providing an embedded type having high operational reliability. Static capacitance type touch panel.

Hereinafter, an embodiment of the present invention will be described with reference to Fig. 1, but is not limited thereto.

(Manufacturing method of substrate with transparent conductive film)

The method for producing a substrate with a transparent conductive film according to the present embodiment is introduced by a well-known DC magnetron sputtering using a target containing indium tin oxide (ITO) as a main material and containing 10 to 15% by weight of cerium oxide. An aerobic argon gas was added to form a transparent conductive film having a film thickness of 90 to 130 Å and a sheet resistance of 10 ⁷ to 10 ⁹ Ω/sq. on a glass substrate.

In the film formation, a target containing indium tin oxide and 10 to 15% of cerium oxide was attached to the non-magnetic target cathode using a DC magnetron sputtering apparatus, and a glass substrate was placed in parallel with the target, and was introduced and added. Aerobic sputtering gas is formed by film formation under specific conditions. For example, set the distance between the target and the substrate: 50 to 150 mm, the ultimate vacuum: 5 to 8 × 10 ^-4 Pa, and the introduction gas: 0.5 to 5.0% (depending on the sputtering pressure), Ar gas of oxygen, sputtering Pressure: 0.1~0.5 Pa, input power: DC 1~3 W/cm ² , substrate heating temperature: room temperature (no heating) ~ 70 °C.

(Transparent conductive film and substrate with transparent conductive film)

The transparent conductive film obtained by the method for producing a substrate with a transparent conductive film according to the present embodiment is formed on a glass substrate, and contains indium tin oxide (ITO) as a main material, and contains 7.2 to 11.2 at% of specific resistance. It is 10 ⁰ ~ 10 ³ Ω ‧ cm, and the transmittance at a wavelength of 550 nm is 98% or more. Further, it is preferable that the film thickness is in the range of 90 to 130 Å, and the sheet resistance is in the order of 10 ⁷ to 10 ⁹ Ω/sq.

The substrate with the transparent conductive film of the present embodiment is composed of a glass substrate and a transparent conductive film of the present embodiment formed on the glass substrate.

(IPS liquid crystal cell and static capacitance type touch panel)

Further, the IPS liquid crystal cell C of FIG. 1 including the substrate with the transparent conductive film of the present embodiment and the embedded capacitive touch panel including the IPS liquid crystal cell C can be produced.

The IPS (In-Plane-Switching) mode refers to a mode in which an active matrix type liquid crystal display device is applied to a substrate. The transverse electric field between the pair of comb-shaped electrodes causes the liquid crystal to rotate in the plane of the substrate for display.

The liquid crystal cell refers to a method in which a spacer is interposed between the TFT substrate and the color filter substrate to precisely position the film, and after the liquid crystal is injected, the panel is cut into individual panel sizes, followed by a film such as a polarizing plate; for example, The section shown in Fig. 1 is shown.

The embedded system refers to a method in which a touch panel function is incorporated into a liquid crystal cell in a panel in which a liquid crystal panel and a touch panel are integrated.

The so-called electrostatic capacitance type refers to a form in which a position is detected by capturing a change in electrostatic capacitance between a fingertip and a detecting electrode formed by patterning of a conductive film.

As shown in FIG. 1, the liquid crystal cell C-based color filter substrate 10 and the TFT substrate 20 of the present embodiment are bonded together in a state in which the liquid crystal 1 is sealed.

The color filter substrate 10 is formed on the surface of the glass substrate 11 on the non-visible side, that is, on the liquid crystal 1 side, and the color filter 13 disposed on the black matrix 12 is laminated, and the alignment film 15 is formed thereon.

The transparent conductive film 3 of the present embodiment is provided on the surface opposite to the liquid crystal 1 of the color filter substrate 10, and a known polarizing plate 17 is laminated thereon, and a cover layer 8 is laminated with the adhesive layer 7 interposed therebetween. The cover layer 8 constitutes the surface of the capacitive touch panel and becomes the touch surface of the user.

The TFT substrate 20 is formed by forming a pixel electrode 24 composed of a comb-shaped transparent electrode on the surface of the glass substrate 21 on the liquid crystal 1 side. On the surface of the TFT substrate 20 and the pixel electrode 24 on the liquid crystal 1 side, an alignment film 25 is further formed, and on the backlight side of the TFT substrate 20, that is, the surface on the opposite side of the liquid crystal 1, the polarizing plate 27 is laminated via the adhesive layer 37.

Between the alignment film 15 and the alignment film 25, the liquid crystal 1 is disposed on the color filter substrate 10 side, and the drive region 4, the sensing region 5, and the ground region 6 are disposed on the TFT substrate 20 side.

The driving region 4 and the sensing region 5 are formed by grouping a plurality of common electrodes of display pixels into the driving region 4 and the sensing region 5.

The common electrode of the drive region 4 is driven by a drive line to transmit an induction signal from a drive logic (not shown). Further, the sensing signal sensed by the common electrode of the sensing area 5 is transmitted by the sensing line, and is processed by a phenomenon detecting and demodulating circuit in the touch control device (not shown).

The static capacitance type touch panel is provided with a drive circuit board, an electrode terminal, and a light source (not shown) in addition to the above liquid crystal cell C.

In FIG. 1, the glass substrate 11 corresponds to the glass substrate of the present embodiment, and the glass substrate 11 and the transparent conductive film 3 correspond to the substrate with the transparent conductive film of the present embodiment.

[Examples]

Hereinafter, specific examples of the transparent conductive film of the present invention will be described, but the present invention is not limited thereto.

(Test Example 1)

A target composed of indium tin oxide and 10% (Example 1), 12.5% (Example 2), and 15% (Example 3) of cerium oxide was used by DC magnetron sputtering under the following conditions. Film formation.

Sputtering device: Carrousel type batch sputtering device

Target: square, thickness 6 mm

Sputtering method: DC magnetron sputtering

Exhaust device: turbomolecular pump

Ultimate vacuum: 5×10 ^-4 Pa

Ar flow: 450 sccm

Oxygen flow rate: 10 sccm (Example 1), 7.3 sccm (Example 2), 6 sccm (Example 3)

Substrate temperature: 70 ° C

Sputtering power: 1.55 W/cm ²

Use substrate: glass substrate t=1.1 mm

According to Table 1, the ratio of oxygen introduction in the sputtering gas of Examples 1 to 3 was 2.1%, 1.6%, and 1.3%, respectively.

Table 1 shows the ratio (wt%) of cerium oxide contained in the target, the sheet resistance of the film-formed transparent conductive film, specific resistance, transmittance, film thickness, and composition ratio of each element in the film (at%) ).

2 and 3 show the relationship between the SiO ₂ ratio (wt%) in the targets of the respective examples shown in Table 1 and the sheet resistance of the film-formed transparent conductive film and the transmittance at 550 nm, respectively. Chart maker.

4 and 5 are Si elements in the films of the respective examples shown in Table 1. The relationship between the ratio (at%) and the sheet resistance of the film-formed transparent conductive film and the transmittance at 550 nm are shown in the graph.

According to Table 1 and Figs. 2 and 4, when the film thickness of the transparent conductive film is 125 to 127 Å, the specific resistance is 10 ⁰ to 10 ³ Ω ‧ cm, and the sheet resistance is 10 ⁵ to 10 ⁹ Ω / Sq. grade, even compared with the previous transparent conductive film, the specific resistance and sheet resistance are very high, achieving a high-resistance transparent conductive film like never before.

Further, according to Table 1, FIG. 3, and FIG. 5, it is understood that the transmittance of the film-formed transparent conductive film at 550 nm is 98 to 99%, and it is known from Table 1 and FIG. 2 to FIG. 5 that it is unprecedentedly high. Resistive, high penetration transparent conductive film.

The state of the crucible contained in the transparent conductive films of Examples 1 to 3 was analyzed by high-resolution measurement by XPS (X-ray Photoelectron Spectroscopy).

The measurement results are shown in Fig. 6 to Fig. 8, respectively.

In Figures 6 to 8, the peaks of the intensity appear near the bond energy 102 eV.

The state in which the yttrium contained in the transparent conductive films of Examples 1 to 3 is an oxide is determined according to the following situation, that is, the peak of Si is known to be in the vicinity of 99 eV, and the peak of SiO _{2 is in} the vicinity of 103 eV, and SiO _x N _y The peak value is around 102 eV, and the peak value of Si ₃ N ₄ is around 101 eV (Source: SCAS Technical News uses XPS wafer analysis); and in this embodiment, the target system is made of indium tin oxide and ruthenium dioxide. In the configuration, the introduction gas is oxygen.

(Test Example 2)

Using a target composed of indium tin oxide and 12.5 wt% of cerium oxide, The film was formed by DC magnetron sputtering under the following conditions.

Sputtering device: rotary type batch sputtering device

Target size: square, thickness 6 mm

Sputtering method: DC magnetron sputtering

Exhaust device: turbomolecular pump

Ultimate vacuum: 5×10 ^-4 Pa

Ar flow rate: 450 sccm (Examples 4 to 6, Comparative Example 1), 150 sccm (Examples 7 to 11)

Oxygen flow rate: 7.3 sccm (Examples 4 to 6, Comparative Example 1), 6.6 sccm (Examples 7 to 11)

Sputtering pressure: 0.4 Pa (Examples 4 to 6, Comparative Example 1), 0.15 Pa (Examples 7 to 11)

Substrate temperature: 70 ° C

Sputtering power: 1.55 W/cm ²

Use substrate: glass substrate t=1.1 mm

Here, film formation was carried out in the case where the oxygen flow rate was 7.3 sccm, the film thickness was 80, 100, 120, 140 Å (Examples 4 to 6, Comparative Example 1); when the oxygen flow rate was 6.6 sccm The film thickness was 80, 90, 100, 110, and 120 Å (Examples 7 to 11).

The ratio of oxygen introduction in the sputtering gas of Examples 4 to 6 and Comparative Example 1 was 1.6%, and the ratio of oxygen introduction in the sputtering gas of Examples 7 to 11 was 4.2%.

Further, in Comparative Example 1, since the transmittance was less than 98%, it was set as a comparative example as outside the scope of the present invention.

Table 2, Fig. 9, and Fig. 10 show the film thickness, sheet resistance, specific resistance, and transmittance of the formed transparent conductive film in the cases of Examples 4 to 6, Comparative Example 1, and Examples 7 to 11. Relationship.

According to Table 2, FIG. 9, and FIG. 10, it is understood that the film-formed transparent conductive film has a specific resistance of 10 ¹ to 10 ² Ω ‧ cm when the film thickness is 80 to 120 Å, and the transmittance at 550 nm is substantially At 98% or more, an unprecedented high-resistance, high-penetration transparent conductive film is obtained.

(Test Example 3)

In Test Example 1, the glass substrate with the transparent conductive film of the transparent conductive films of Examples 1 to 3 was formed and kept at 120 ° C for 0 hours, 1 hour, 2 hours, and 3 hours in the air. Each sample is measured for thin slices Heat resistance test of resistance.

The measurement results are shown in Fig. 11 .

From the results of the heat resistance test, it was found that any of Examples 1 to 3 was kept at 120 ° C for 0 hours, 1 hour, 2 hours, and 3 hours, and the sheet resistance was hardly changed, and was maintained at 120 ° C. The condition up to 3 hours has high heat resistance.

(Test Example 4)

In Test Example 2, the glass substrate with the transparent conductive film of the transparent conductive films of Examples 4 to 6 was formed and kept at 120 ° C for 0 hours, 1 hour, 2 hours, and 3 hours in the air. Each sample was subjected to a heat resistance test for measuring sheet resistance.

The measurement results are shown in Fig. 12 .

From the results of the heat resistance test, it was found that any of Examples 4 to 6 was kept at 120 ° C for 0 hours, 1 hour, 2 hours, and 3 hours, and the sheet resistance did not change greatly. The condition of °C maintained to 3 hours has high heat resistance.

(Test Example 5)

In Test Example 2, the glass substrate with the transparent conductive film of the transparent conductive film of Examples 4 to 6 was formed in a constant temperature and humidity chamber set to a temperature of 60 ° C and a humidity of 90%, and kept at 0, 90, 150, 198, 246, 342, 582, 750, and 1014 hours, the moisture resistance test for measuring the sheet resistance was performed on each of the samples after the holding.

The measurement results are shown in Fig. 13 .

From the results of the moisture resistance test, it is understood that Examples 4 to 6 are at 60 ° C, 90%. After holding for 0 hours to 1014 hours, there is no significant change in the sheet resistance. For the conditions of maintaining at 60 ° C and 90% for 0 to 1014 hours, if the film thickness is thin, the rate of change tends to be large. But it has high moisture resistance.

(Test Example 6)

A film composed of indium tin oxide and 12.5 wt% of cerium oxide was used to form a film by DC magnetron sputtering under the following conditions.

Sputtering device: rotary type batch sputtering device

Target size: square, thickness 6 mm

Sputtering method: DC magnetron sputtering

Exhaust device: turbomolecular pump

Ultimate vacuum: 5×10 ^-4 Pa

Ar flow: 450 sccm

Oxygen flow rate: 0, 2, 4, 6, 8, 10 sccm (Comparative Example 2, 3, Examples 12 to 14, Comparative Example 4)

Substrate temperature: 70 ° C

Sputtering power: 1.55 W/cm ²

Use substrate: glass substrate t=1.1 mm

The ratios of oxygen introduction in the sputtering gases of Comparative Examples 2 and 3, Examples 12 to 14, and Comparative Example 4 were 0%, 0.4%, 0.9%, 1.3%, 1.8%, and 2.2%, respectively.

At this time, the film thickness is in the range of 117 to 126 Å.

Table 3, Fig. 14, and Fig. 15 show the relationship between the amount of oxygen introduced, the sheet resistance, the specific resistance, and the transmittance.

[table 3]

According to Table 3, Fig. 14, and Fig. 15, the transparent conductive film formed into a film had a transmittance of 98% or more except for the comparative examples 2 and 3 in which the oxygen flow rate was 2 sccm or less. As for the specific resistance, it is known that in the comparative example 4 in which the oxygen flow rate is 10 sccm, it is 10 ⁴ Ω ‧ cm and exceeds a specific range. If both are considered, the oxygen flow rate is 4 to 8 sccm (oxygen concentration in the sputtering gas) The range of 0.88~1.75%) is suitable. Within this range, the change in sheet resistance and specific resistance is also small, so that it is also advantageous in terms of control at the time of film formation.

C‧‧‧Liquid Crystal Unit

1‧‧‧LCD

2‧‧‧Parts

3‧‧‧Transparent conductive film

4‧‧‧ Drive area

5‧‧‧Sensing area

6‧‧‧ Grounding area

7, 37‧‧‧ adhesive layer

8‧‧‧ Coverage

10‧‧‧Color filter substrate

11, 21‧‧‧ glass substrate

12‧‧‧Black matrix

13‧‧‧ color filter

15, 25‧‧ ‧ alignment film

17, 27‧‧‧ polarizing plate

20‧‧‧TFT substrate

24‧‧‧pixel electrode (transparent electrode)

Fig. 1 is a schematic view showing a cross-sectional structure of an IPS liquid crystal cell according to an embodiment of the present invention.

Figure 2 is a graph showing the relationship between the SiO ₂ ratio in the target and the sheet resistance.

Figure 3 is a graph showing the relationship between the SiO ₂ ratio in the target and the transmittance.

Fig. 4 is a graph showing the relationship between the Si ratio in the film and the sheet resistance.

Fig. 5 is a graph showing the relationship between the Si ratio and the transmittance in the film.

Fig. 6 is a graph showing the results of XPS analysis of a transparent conductive film formed using a target having a SiO ₂ ratio of 10 wt%.

Fig. 7 is a graph showing the results of XPS analysis of a transparent conductive film formed using a target having a SiO ₂ ratio of 12.5 wt%.

Fig. 8 is a graph showing the results of XPS analysis of a transparent conductive film formed using a target having a SiO ₂ ratio of 15 wt%.

Fig. 9 is a graph showing the relationship between the film thickness and the sheet resistance.

Fig. 10 is a graph showing the relationship between film thickness and transmittance.

Fig. 11 is a graph showing the results of a heat resistance test of a transparent conductive film formed by changing the SiO ₂ ratio in a target.

Fig. 12 is a graph showing the results of a heat resistance test in the case where the film thickness is changed.

Fig. 13 is a graph showing the results of the moisture resistance test in the case where the film thickness is changed.

Fig. 14 is a graph showing the relationship between the amount of oxygen introduced during film formation and the sheet resistance of the film-formed transparent conductive film.

Fig. 15 is a graph showing the relationship between the amount of oxygen introduced during film formation and the transmittance of the film-formed transparent conductive film.

C‧‧‧Liquid Crystal Unit

1‧‧‧LCD

2‧‧‧Parts

3‧‧‧Transparent conductive film

4‧‧‧ Drive area

5‧‧‧Sensing area

6‧‧‧ Grounding area

7, 37‧‧‧ adhesive layer

8‧‧‧ Coverage

10‧‧‧Color filter substrate

11, 21‧‧‧ glass substrate

12‧‧‧Black matrix

13‧‧‧ color filter

15, 25‧‧ ‧ alignment film

17, 27‧‧‧ polarizing plate

20‧‧‧TFT substrate

24‧‧‧pixel electrode (transparent electrode)

Claims (6)

A transparent conductive film formed on a glass substrate, characterized in that: indium tin oxide (ITO) is used as a main material, and has a 矽 of 7.2 to 11.2 at%, and a specific resistance of 10 ⁰ to 10 ³ Ω·cm. The transmittance at a wavelength of 550 nm is 98% or more. A substrate with a transparent conductive film which is formed on a glass substrate and has a transparent conductive film of the first application of the patent scope. The film thickness of the transparent conductive film is in the range of 90 to 130 Å, and the sheet resistance is 10 ⁷ to 10 ^{9 .} Ω/sq. level. An IPS liquid crystal cell comprising a substrate having a transparent conductive film of the second application of the patent application, wherein the transparent conductive film is disposed on a side opposite to the liquid crystal of the color filter side glass substrate. A static capacitance type touch panel is provided with an IPS liquid crystal cell of claim 3, and a static capacitance detecting electrode is incorporated in the IPS liquid crystal cell. A method for manufacturing a substrate with a transparent conductive film, which is a method for manufacturing a substrate with a transparent conductive film according to item 2 of the patent application, wherein a film thickness of 90 to 130 Å is formed on the glass substrate, and the sheet resistance is The transparent conductive film of 10 ⁷ to 10 ⁹ Ω/sq. A method for producing a substrate having a transparent conductive film according to the fifth aspect of the invention, wherein a target of indium tin oxide (ITO) and containing 10 to 15% by weight of cerium oxide is introduced, and argon added with oxygen is introduced. Gas as a splash gas The transparent conductive film is formed by DC magnetron sputtering.