CN108028094A - The manufacture method of substrate, liquid crystal panel with transparency conducting layer and the substrate with transparency conducting layer - Google Patents
The manufacture method of substrate, liquid crystal panel with transparency conducting layer and the substrate with transparency conducting layer Download PDFInfo
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- CN108028094A CN108028094A CN201780002944.4A CN201780002944A CN108028094A CN 108028094 A CN108028094 A CN 108028094A CN 201780002944 A CN201780002944 A CN 201780002944A CN 108028094 A CN108028094 A CN 108028094A
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- transparency conducting
- conducting layer
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- oxide
- liquid crystal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The present invention provides the manufacture method of the substrate for carrying the consistent transparency conducting layer that resistance is produced with the time, liquid crystal panel and the substrate with transparency conducting layer.As the substrate with transparency conducting layer involved by one embodiment of the present invention, there is substrate and transparency conducting layer.A kind of transparency conducting layer is provided to set on the substrate and containing the substrate with transparency conducting layer of at least any one and tin oxide in niobium oxide, tantalum oxide and antimony oxide.Thus, in the substrate with transparency conducting layer, resistance tails off with the change that the time produces.
Description
Technical field
The present invention relates to the manufacturer of the substrate with transparency conducting layer, liquid crystal panel and substrate with transparency conducting layer
Method.
Background technology
The electric field that employing makes base plate of liquid crystal panel produce horizontal direction component drives the so-called transverse electric field of liquid crystal
Type of drive (IPS (In-Plane Switching：Coplanar conversion) mode or FFS (Fringe Field Switching：Side
Change edge field) mode) the liquid crystal panels of In-cell types there is following structure.For example, the structure has colorized optical filtering chip base
Plate, counter substrate and the liquid crystal being arranged between these substrates, wherein, the counter substrate has what liquid crystal was driven
Liquid crystal drive touches the sensing sensor electrode sensed with electronic circuit and to finger.
In this liquid crystal panel, electrode is not formed in colored filter substrate, colorized optical filtering sector-meeting is powered and produces aobvious
Show delaying work for action.This powered in order to prevent, there are following technology：The colorized optical filtering chip base of colored filter is not being formed
The face of plate, is set transparency conducting layer of the high-resistance tin indium oxide as main material and containing silicon (for example, referring to patent text
Offer 1).
Prior art literature
Patent document
Patent document 1：No. 5855948 publications of Japanese Patent No..
The content of the invention
The subject that the invention solves
However, transparency conducting layer of the tin indium oxide as principal component and containing silicon can be exposed into tin indium oxide on its surface.
Therefore, the weatherability of the transparency conducting layer or resistance to chemical reagents are poor, its resistance easily changes with the time.
In view of the foregoing, it is an object of the present invention to provide it is a kind of produce with the time with resistance it is consistent
The manufacture method of the substrate of bright conductive layer, liquid crystal panel and the substrate with transparency conducting layer.
Solutions to solve the problem
In order to achieve the above objectives, the substrate with transparency conducting layer involved by one embodiment of the present invention have substrate and
Transparency conducting layer.
The transparency conducting layer is set on the substrate, contains at least appointing in niobium oxide, tantalum oxide and antimony oxide
One and tin oxide.
Thus, in the substrate with transparency conducting layer, resistance tails off with the change that the time produces.
In the above-mentioned substrate with transparency conducting layer, in the niobium oxide, the tantalum oxide and the antimony oxide
At least the containing ratio of any one can also be more than 5wt% and below 15%wt in the transparency conducting layer.
Thus, in the substrate with transparency conducting layer, oxide is difficult to be reduced, and maintains the height electricity of transparency conducting layer
Resistance state.
In the above-mentioned substrate with transparency conducting layer, the square resistance of the transparency conducting layer can also be 1 × 107
More than (Ω/sq.) and 1 × 1010(Ω/sq.) below.
The transmissivity of the transparency conducting layer can also be more than 98.5% in wavelength 550nm.
By the way that the substrate of this transparency conducting layer with high light transmittance rate to be used for the liquid crystal panel of In-cell types, suppression
The powered of colored filter is made, and the light transmission of liquid crystal panel will not substantially reduce.
In the above-mentioned substrate with transparency conducting layer, the thickness of the transparency conducting layer can also be more than 5nm and
Below 15nm.
Thus, in the substrate with transparency conducting layer, set on substrate saturating with appropriate resistance and transmissivity
Bright conductive layer.
In the above-mentioned substrate with transparency conducting layer, the transparency conducting layer can also contain nitrogen.
Thus, in the substrate with transparency conducting layer, the resistance of transparency conducting layer is adjusted by the additive amount of nitrogen.
In the above-mentioned substrate with transparency conducting layer, the substrate can also have transparent substrate and colored filter.
The transparent substrate is set can also be between the transparency conducting layer and the colored filter.
Thus, the powered of colored filter is suppressed by transparency conducting layer.
In addition, the liquid crystal panel involved by one embodiment of the present invention has the substrate with transparency conducting layer, counter substrate
And liquid crystal.
The substrate with transparency conducting layer has the first transparent substrate, transparency conducting layer and colored filter, described
First transparent substrate has the first face and the second face.Transparency conducting layer is arranged on first face, contains niobium oxide, tantalum oxide
And at least any one and tin oxide in antimony oxide.Colored filter is arranged on second face.
There is the counter substrate the second transparent substrate and the sensing sensor being arranged on second transparent substrate to use
Electrode and liquid crystal drive electronic circuit.
The liquid crystal is arranged between the substrate with transparency conducting layer and the counter substrate, is driven by the liquid crystal
Employ electronic circuit and by drive control.
Thus, in the liquid crystal panel, the powered of colored filter is prevented by transparency conducting layer.It is moreover, transparent at this
In conductive layer, resistance produces with low uncertainty with the time.As a result touch-sensing function was produced with the time in liquid crystal panel
With low uncertainty, reliability further improves.
In above-mentioned liquid crystal panel, in the niobium oxide, the tantalum oxide and the antimony oxide at least any one
Containing ratio can also be more than 5wt% and below 15%wt in the transparency conducting layer.
Thus, in the substrate with transparency conducting layer of liquid crystal panel, oxide is difficult to be reduced, and maintains electrically conducting transparent
The high resistance state of layer.
In above-mentioned liquid crystal panel, the square resistance of the transparency conducting layer can also be 1 × 107More than (Ω/sq.)
And 1 × 1010(Ω/sq.) below.
The transmissivity of the transparency conducting layer can also be more than 98.5% in wavelength 550nm.
By the way that the substrate of this transparency conducting layer with high light transmittance rate to be used for the liquid crystal panel of In-cell types, suppression
The powered of colored filter is made, and the light transmission of liquid crystal panel will not substantially reduce.
In above-mentioned liquid crystal panel, the thickness of the transparency conducting layer can also be more than 5nm and below 15nm.
Thus, in the liquid crystal panel, the electrically conducting transparent with appropriate resistance and transmissivity is set on the transparent substrate
Layer.
In above-mentioned liquid crystal panel, the transparency conducting layer can also contain nitrogen.
Thus, in the liquid crystal panel, the resistance of transparency conducting layer is adjusted by the additive amount of nitrogen.
In addition, in the manufacture method of the substrate with transparency conducting layer involved by one embodiment of the present invention, using containing
There is a target of at least any one and the tin oxide in niobium oxide, tantalum oxide and antimony oxide, the niobium oxide in the target,
At least containing ratio of any one in the tantalum oxide and the antimony oxide is more than 5wt% and below 15%wt.In oxygen
Under the mixed-gas environment for pressing the argon and oxygen for more than 0.005Pa and below 0.05Pa, niobium oxide, oxidation will be contained on substrate
The transparency conducting layer of at least any one and tin oxide in tantalum and antimony oxide forms a film.
By the way that transparency conducting layer forms a film under this mixed-gas environment, can obtain desired high-resistance transparent
Conductive layer.And then suppress transparency conducting layer in oxide reduction, can obtain resistance produced with the time it is consistent
Bright conductive layer.
In the manufacture method of the above-mentioned substrate with transparency conducting layer, the mixed gas can also be made to contain nitrogen,
The partial pressure of the nitrogen for more than 0.025Pa and below 0.1Pa in the case of the transparency conducting layer is formed a film.
Thus, in the substrate with transparency conducting layer, the resistance of transparency conducting layer is adjusted by the additive amount of nitrogen.
Invention effect
As described above, according to the present invention, there is provided the substrate of the consistent transparency conducting layer produced with resistance with the time,
The manufacture method of liquid crystal panel and substrate with transparency conducting layer.
Brief description of the drawings
Fig. 1 is the schematic cross sectional view for representing the liquid crystal panel involved by present embodiment.
Fig. 2 is the oxygen flow and transparency conducting layer represented in the case where having used the target containing tin oxide and niobium oxide
Square resistance relation summary chart.
Fig. 3 be represent as comparative example used the target being made of ITO in the case of oxygen flow and ITO layer
The summary chart of the relation of square resistance.
Fig. 4 is the side for representing nitrogen flow and transparency conducting layer in the case where the mixed gas to argon and oxygen with the addition of nitrogen
The summary chart of the relation of block resistance.
Fig. 5 is the summary chart for the light transmission for representing transparency conducting layer.
Fig. 6 is the summary chart (its 1) for representing the change that the square resistance of transparency conducting layer is produced with the time.
Fig. 7 is the summary chart (its 2) for representing the change that the square resistance of transparency conducting layer is produced with the time.
Fig. 8 is the summary chart for the corrosion resistance for representing transparency conducting layer.
Embodiment
Hereinafter, while one side illustrates embodiments of the present invention referring to the drawings.In the drawings, introduce sometimes
XYZ axial coordinates.In addition, numerical value as shown below, figure, chart are example, example is not limited to.
In the present embodiment, to employ FFS modes In-cell types the liquid crystal panel with touch panel function into
Illustration is gone, but it's not limited to that.For example, the liquid crystal panel involved by present embodiment can also be suitable for IPS modes
Liquid crystal panel, additionally it is possible to suitable for lower structure：A substrate in a pair of of the substrate for forming liquid crystal panel sets liquid crystal
Driving electronic circuit and sensing sensor electrode, electrode is not formed and formed with colored filter in another substrate.
[liquid crystal panel]
Fig. 1 is the schematic cross sectional view for representing the liquid crystal panel involved by present embodiment.
Liquid crystal panel 1 shown in Fig. 1 has the function and touch panel function of display image concurrently.Liquid crystal panel 1 has band thoroughly
Substrate 10, counter substrate 20, liquid crystal 40, polarizer 50, glass cover-plate 60, the polarizer 51 of bright conductive layer.In the example of Fig. 1
In, polarizer 51, counter substrate 20, liquid crystal 40, the substrate 10 with transparency conducting layer, polarization are sequentially laminated with the Z-axis direction
Piece 50 and glass cover-plate 60.Sept 41 is provided with liquid crystal 40.
In liquid crystal panel 1, backlight is injected to polarizer 51.In addition, watched in liquid crystal panel 1 through glass cover-plate 60
Image.In addition, in liquid crystal panel 1, touch operation can be carried out by using the grade touch glass of finger 70 cover board 60.Hereinafter,
The structure of each component of liquid crystal panel 1 is described in detail.
Substrate 10 with transparency conducting layer has transparency conducting layer 12 and colored filter substrate 14.Colored filter substrate
14 include transparent substrate 11 (the first transparent substrate) and colored filter 15.Transparent substrate 11 is arranged on transparency conducting layer 12 and coloured silk
Between colo(u)r filter 15.Transparent substrate 11 is, for example, glass substrate.Transparency conducting layer 12 is in liquid crystal panel 1 for example as antistatic
Layer and play a role.
Transparency conducting layer 12 is arranged on the surface 11a (the first face) of transparent substrate 11.Transparency conducting layer 12 contains oxidation
Niobium (Nb2O3Or Nb2O5), tantalum oxide (Ta2O3Or Ta2O5) and antimony oxide (Sb2O3Or Sb2O5) at least any one and oxidation
Tin (SnO2)。
For example, transparency conducting layer 12 by the tin oxide as principal component and the niobium oxide as accessory ingredient, tantalum oxide and
At least any one composition in antimony oxide.Here, the micro- of the manufacturing process importing of target is included in transparency conducting layer 12 sometimes
The elements such as the aluminium (Al) of amount, zirconium (Zr).Included in transparency conducting layer 12 or can be not comprising micro- (Al, Zr etc.)
Substantially identical effect is obtained in present embodiment.Can also be the in addition to above-mentioned oxide in addition, as accessory ingredient
The oxide of any one element of group iii elements.
In addition, in transparency conducting layer 12, at least containing ratio of any one in niobium oxide, tantalum oxide and antimony oxide is
More than 5wt% and below 15%wt.When at least containing ratio of any one in niobium oxide, tantalum oxide and antimony oxide is less than
During 5wt%, such as the resistance of transparency conducting layer 12 is lower, thus not preferred.On the other hand, when niobium oxide, tantalum oxide and oxygen
When at least containing ratio of any one in change antimony is more than 15wt%, for example, the target used in film forming becomes to be easily broken off, because
Without preferred.
The square resistance for the transparency conducting layer 12 being made of this oxide is, for example, 1 × 107More than (Ω/sq.) and 1 ×
1010(Ω/sq.) below.When the square resistance of transparency conducting layer 12 is less than 1 × 107When (Ω/sq.), for example, during touch operation
Touch signal shielded by transparency conducting layer 12, it is thus not preferred.On the other hand, when the square resistance of transparency conducting layer 12 is more than
1×1010When (Ω/sq.), such as transparency conducting layer 12 goes electrostatic function to reduce, thus not preferred.
The square resistance of transparency conducting layer 12 can by the niobium oxide that makes to include in transparency conducting layer 12, tantalum oxide and
At least containing ratio of any one in antimony oxide changes to be adjusted.Alternatively, the square resistance for example can be by making film forming
When the amount of oxygen that is imported to transparency conducting layer 12 change and be adjusted.In addition, the transparency conducting layer with this square resistance
12 transmissivity is more than 98.5% in wavelength 550nm.
In the liquid crystal panel 1 of transparency conducting layer 12 is provided with, the weatherability or resistance to chemical reagents of transparency conducting layer 12 are excellent,
The oxide included in transparency conducting layer 12 is difficult to be reduced.Thus, the resistance of transparency conducting layer 12 high resistance state (1 ×
107More than (Ω/sq.) and 1 × 1010(Ω/sq.) below) under can maintain for a long time.As a result in liquid crystal panel 1, touch
Touch-sensing when touching operation is stablized, and suppresses the powered of colored filter 15.Moreover, in liquid crystal panel 1, transparency conducting layer 12
The transmissivity of light become higher, the light transmission of liquid crystal panel will not substantially reduce, and can more clearly watch the figure of liquid crystal panel 1
Picture.That is, the functional reliability of liquid crystal panel 1 further improves.
In addition, the thickness of transparency conducting layer 12 is more than 5nm and below 15nm.When the thickness of transparency conducting layer 12 is less than
During 5nm, since the square resistance of such as transparency conducting layer 12 becomes higher than above-mentioned scope, transparency conducting layer 12 removes electrostatic work(
It can reduce, it is thus not preferred.When the thickness of transparency conducting layer 12 is more than 15nm, due to the transmissivity of such as transparency conducting layer 12
Reduce, it is thus not preferred.
In addition, nitrogen (N) can also be contained in transparency conducting layer 12.Nitrogen for example contains as impurity element leads transparent
In electric layer 12.The square resistance of transparency conducting layer 12 can be adjusted for example, by changing the additive amount of nitrogen.For example,
When transparency conducting layer 12 forms a film, the proportion adjustment of oxygen that by that will form a film when imports is into the journey for reducing transparency conducting layer 12
Degree, the ratio of the nitrogen imported when independently controlling film forming with the ratio of oxygen, so as to adjust the square of transparency conducting layer 12 electricity
Resistance.
Assuming that by ITO (Indium Tin Oxide：Tin indium oxide) in the case that layer monomer constitute transparency conducting layer,
Since the weatherability or resistance to chemical reagents of ITO layer are low, so the square resistance of ITO layer is lower with the process of time.Thus, by
In the liquid crystal panel that ITO layer monomer is formed, touch-sensing function is gradually degraded with the time.Its reason is considered as in ITO layer
In the oxygen that includes depart from (so-called oxygen escape) with the time, its square resistance is reduced with the time.Moreover, as its reason
By when forming a film ITO in adhesive substrates, it is impossible to be sufficiently carried out making annealing treatment, it is impossible to form the high ITO layer of crystallinity.
In addition, in it with the addition of the monomer layer of Si to ITO layer, since ITO exposes in monomer layer surface, so can also produce identical show
As.
In addition, the phenomenon that the oxygen included in order to prevent in ITO layer departs from the time, consideration, which has to set in ITO layer, to be suppressed
The method of the coating of the disengaging of oxygen.But compared with individual layers, on the ito layer there is provided coating layered product the number of plies
Increase, the light transmission of layered product itself are lower.As the method for making the light transmission of the layered product increase, having makees coating
The method to play a role for anti-reflection layer.But anti-reflection layer needs to be formed thicker, when using this method, manufacture
Cost can rise.
Like this, above-mentioned transparency conducting layer 12 is used preferably in liquid crystal panel.
Colored filter 15 is formed on the surface 11b (the second face) of transparent substrate 11.Colored filter 15 is by using black
Chromoresin etc. is formed as the black matrix of clathrate and is formed as example banded red in a manner of the opening portion for filling black matrix
Chromatic colorant layer, green colored layer, blue-colored layer are formed.Formed with alignment films (not shown) on colored filter 15.
The opening portion formed by the black matrix of clathrate is corresponding with sub-pixel, and a pixel is by red sub-pixel, green
Three sub-pixels of pixel and blue subpixels are formed.
Counter substrate 20 has transparent substrate 21 (the second transparent substrate) and functional layer 22, and the functional layer 22 has sensing
Sensor-use electrode and liquid crystal drive electronic circuit.Transparent substrate 21 is, for example, glass substrate.
Transparent substrate 21 has surface 21a and surface 21b.Functional layer 22 is arranged on the surface 21b of transparent substrate 21.This
Outside, formed with alignment films (not shown) in functional layer 22.
Liquid crystal drive is the component that is driven to liquid crystal 40 with electronic circuit.Sensing sensor forms sensing with electrode and passes
A part for sensor, is the component sensed to the touch operation on 60 surface of glass cover-plate.
Functional layer 22 has pixel electrode, TFT (Thin Film Transistor：Thin film transistor (TFT)), gate line, signal
Line, common electrode, common electrode drive are with line, sensing sensor with drives line, sensing sensor detection line.
Liquid crystal drive electronic circuit is by pixel electrode, TFT, gate line, signal wire, common electrode, common electrode drive
Formed with line.These liquid crystal drives are passed through in the drive circuit substrate (not shown) being electrically connected with liquid crystal panel with electronic circuit
The drive control circuit of setting controls to be driven.
Sensing sensor electrode is by sensing sensor drives line, sensing sensor detection line and common electrode structure
Into.Sensing sensor is made of these sensing sensors with electrode and touch location detection control circuit, touch location detection control
Circuit processed is arranged on the drive circuit substrate (not shown) being electrically connected with liquid crystal panel.By setting sensing sensor, liquid crystal surface
Plate has touch panel function.Common electrode for liquid crystal drive also serves as sensing sensor and is played a role with electrode.
Like this, the liquid for the image that generation is shown in the display picture of liquid crystal panel 1 is provided with counter substrate 20
Brilliant driving is carried out with electronic circuit and to the touch using execution of instrument such as finger 70, screen touch pens on the surface of liquid crystal panel 1
A part for the sensing sensor of sensing.
When the horizontal plane of transparent substrate 21 is set to X/Y plane, gate line and signal wire are set respectively across interlayer dielectric
Put in X-direction, Y direction, the pixel electrode of TFT and comb teeth-shaped is set in each of which cross part.Form the gate electrode of TFT
It is electrically connected with gate line, forms the source electrode of TFT, drain electrode is electrically connected with signal wire and pixel electrode respectively.
Common electrode accordingly forms multiple with each pixel in island.TFT, common electrode, pixel electrode are respectively
The knot being laminated from 21 side of transparent substrate with the order of TFT, interlayer dielectric, common electrode, interlayer dielectric, pixel electrode
Structure.
Common drive line is electrically connected with common electrode, is formed in the layer identical with signal wire, source electrode and drain electrode.
In the layer identical with gate electrode and gate line, multiple sensing sensor drives lines are formed in the X-axis direction.Sensing
Sensor drives line is electrically connected with the common electrode of a part, and the common electrode being connected with sensing sensor with driving electrodes is made
Play a role for the driving electrodes of sensing sensor.Sensing sensor driving electrodes are controlled with touch location detection (not shown)
Circuit connects, the drive signal of the touch location detection control circuit output touch location detection.
In the layer identical with source electrode and signal wire, multiple sensing sensor detection lines are formed in the Y-axis direction.Sensing passes
Sensor detection line is electrically connected with other common electrodes that discord sensing sensor is electrically connected with drives line, with sensing sensor
The detecting electrode of the common electrode as the sensing sensor that are connected by the use of detection line plays a role.Sensing sensor drives line with not
The touch location detection control circuit connection of diagram, the touch location detection control circuit are received from sensing sensor detection line
The detection signal sent.Also, parsed by docking received detection signal and calculate the coordinate of touch location.
In liquid crystal panel 1, in the display stage, transverse electric field is formed to drive liquid with electronic circuit by liquid crystal drive
Crystalline substance 40, makes image display in liquid crystal panel 1.In the touch stage, due to by finger close to display surface, the drive of sensing sensor
Capacitance between moving electrode and detecting electrode is reduced, so determining finger by detecting the change of the capacitance by sensing sensor
Touch location.
Liquid crystal 40 is arranged between colored filter 15 and the counter substrate 20 of the substrate 10 with transparency conducting layer.Colour filter
Gap between mating plate 15 and counter substrate 20 is kept by sept 41.Transparent substrate 11 formed with colored filter 15
Surface 11b and the surface 21b of the transparent substrate 21 for being provided with functional layer 22 of counter substrate 20 it is opposite.The driving of liquid crystal 40 is led to
Liquid crystal drive is crossed with electronic circuit to control.In addition, glass cover-plate 60 is fixed by adhesive linkage (not shown) with polarizer 50.
[manufacture method of transparency conducting layer]
While with reference to Fig. 1, while the manufacture of the substrate 10 with transparency conducting layer to the structural element as liquid crystal panel 1
Method illustrates.
Prepare for example on the surface 11b of transparent substrate 11 formed with by black matrix, red colored layer, green colored layer with
And the colored filter substrate 14 of the colored filter 15 of blue-colored layer composition.
Next, form transparency conducting layer 12 in the surface 11a for not forming the transparent substrate 11 of colored filter 15.It is transparent
Conductive layer 12 is formed using such as DC sputtering methods.Magnetic control DC sputtering modes can also be used as DC sputtering methods.Alternatively, transparent lead
Electric layer 12 can also be formed using such as AC sputtering methods.Magnetic control AC sputtering modes can also be used as AC sputtering methods.According to AC
Sputtering method, when having used the target of electric conductivity when the transparency conducting layer 12 (reactive sputtering) of formation high resistance state, energy
Enough ensure anode, productivity is excellent.
As target, the target containing at least any one and tin oxide in niobium oxide, tantalum oxide and antimony oxide is used.
For example, target is by the tin oxide as principal component and as at least appointing in the niobium oxide, tantalum oxide and antimony oxide of accessory ingredient
One composition.Here, the trace elements such as aluminium (Al), zirconium (Zr) are imported to target in the manufacturing process of target sometimes.In target
In contain or not contain micro- (Al, Zr etc.), can obtain substantially identical effect in the present embodiment.
At least containing ratio of any one in the niobium oxide of target, tantalum oxide and antimony oxide is more than 5wt% and 15%
Below wt.Hereinafter, example is carried out to the situation for having used the target containing the niobium oxide in niobium oxide, tantalum oxide and antimony oxide
Show.Here, the containing ratio of the niobium oxide in target is, for example, 10wt%.
For example, using the target containing tin oxide and niobium oxide, in DC sputter equipments, on the surface of transparent substrate 11
11a forms transparency conducting layer 12.The thickness of transparency conducting layer 12 is, for example, 10nm.Membrance casting condition is as follows.
Target：Tin oxide/niobium oxide (10wt%)
Discharge gas：Argon (Ar)/oxygen (O2)
Gas stagnation pressure：More than 0.1Pa and below 1.0Pa
Argon partial pressure：0.2Pa (flow 40sccm)
Partial pressure of oxygen：More than 0.005Pa (flow 1.0sccm) and 0.05Pa (10sccm) is below, preferably 0.005Pa (flows
More than 1.0sccm) and 0.013Pa (flow 2.5sccm) below
Substrate temperature：25 DEG C of setting
Assuming that in the case of forming the ITO layer monomer of high resistance state as transparency conducting layer, it is necessary to film forming when
The partial pressure of oxygen in mixed gas is set to increase and oxygen is imported in large quantities into ITO layer.But in the method, led into ITO layer
Enter substantial amounts of oxygen, oxygen can depart from the time, its square resistance can be reduced with the time.
On the other hand, in the present embodiment, having used can also obtain even if increasing the partial pressure of oxygen in mixed gas
Obtain the target of the transparency conducting layer 12 of high resistance state.Its reason is illustrated with reference to ensuing Fig. 2.
Fig. 2 is the oxygen flow and transparency conducting layer represented in the case where having used the target containing tin oxide and niobium oxide
Square resistance relation summary chart.
The transverse axis of Fig. 2 for film forming when oxygen flow (sccm), the longitudinal axis for transparency conducting layer 12 square resistance (Ω/
sq.).Fig. 2 shows a case that in atmospheric environment and places transparency conducting layer 12 at room temperature and at atmospheric environment and 120 DEG C
Transparency conducting layer 12 is placed to the result of the situation of 60 minutes.Here, the implication of arrow A for desired high resistance state (1 ×
107(Ω/sq.) is with up to 1 × 1010(Ω/sq.)) scope.The scope is an example, and high resistance state is not limited to arrow
Scope shown in head A.
As shown in Fig. 2, under placing the situation (△) of transparency conducting layer 12 in atmospheric environment and at room temperature, it is in oxygen flow
In the scope of more than 1.0sccm and below 2.5sccm, when flow is 1.5sccm, the square resistance of transparency conducting layer 12 becomes pole
It is small.Moreover, the minimum (1 × 108(Ω/sq.)) in the range of desired high resistance state.
In addition, under transparency conducting layer 12 to be placed to the situation (zero) of 60 minutes at atmospheric environment and 120 DEG C, in oxygen flow
For in the scope of more than 1.0sccm and below 2.5sccm, when flow is 2.5sccm, the square resistance of transparency conducting layer 12 becomes
It is minimum.Moreover, the minimum (1 × 107(Ω/sq.)) in the range of desired high resistance state.Hereinafter, in order to than
Compared with and the relation of the square resistance of oxygen flow and ITO layer in the case of having used the target being made of ITO illustrate.
Fig. 3 be represent as comparative example used the target being made of ITO in the case of oxygen flow and ITO layer
The summary chart of the relation of square resistance.
As shown in figure 3, in the case where having used the target being made of ITO, in order to obtain desired high resistance state
ITO layer, it is necessary to make the flow (partial pressure of oxygen) of oxygen than having used the situation of the target containing tin oxide and niobium oxide high.Such as to
ITO layer has imported the oxygen of more than 4.5sccm.But in this ITO layer, there is a situation where that oxygen departs from the time.
On the other hand, in the case where having used the target containing tin oxide and niobium oxide, even if not making in mixed gas
Flow (partial pressure of oxygen) increase the transparency conducting layer 12 that can also obtain desired high resistance state.If that is, make
With the target containing tin oxide and niobium oxide, even if not importing oxygen into transparency conducting layer 12 excessively then, institute can be also formed
The transparency conducting layer 12 of desired high resistance state.In other words, can if using the target containing tin oxide and niobium oxide
It is enough to obtain the electrically conducting transparent of high resistance state by importing the oxygen of the amount fewer than the situation for forming ITO layer to transparency conducting layer 12
Layer 12.
Thus, in transparency conducting layer 12, the reduction of oxide is suppressed in a long time, and high resistance state is by for a long time
Maintain.As a result liquid crystal panel 1 is touch sensitivity to deteriorate, produced due to powered delay work less, reliable operation
The high liquid crystal panel of property.In addition, in the case where having used the target containing tin oxide and niobium oxide, when the flow of oxygen is less than
During 1sccm (partial pressure 0.005Pa), such as the light transmission of transparency conducting layer 12 rises, thus not preferred.In addition, using
In the case of target containing tin oxide and niobium oxide, when the flow of oxygen is more than 10sccm (partial pressure 0.05Pa), such as to saturating
Bright conductive layer 12 imports substantial amounts of oxygen, and oxygen easily departs from the time from transparency conducting layer 12, thus not preferred.
In addition it is also possible in above-mentioned mixed gas (Ar/O2) in further contain nitrogen (N2) and form transparency conducting layer
12.In this case, such as to transparency conducting layer 12 nitrogen (N) as impurity element is imported.Membrance casting condition is as follows.
Target：Tin oxide/niobium oxide (10wt%)
Discharge gas：Argon (Ar)/oxygen (O2)/nitrogen (N2)
Gas stagnation pressure：More than 0.1Pa and below 1.0Pa
Argon partial pressure：0.2Pa (flow 40sccm)
Partial pressure of oxygen：More than 0.005Pa (flow 1.0sccm) and 0.05Pa (10sccm) is below, is preferably 0.005Pa (streams
Measure 1.0sccm) more than and 0.013Pa (flow 2.5sccm) below
Nitrogen partial pressure：More than 0.025Pa (flow 5.0sccm) and 0.1Pa (flow 20sccm) is below
Substrate temperature：25 DEG C of setting
Fig. 4 is the nitrogen flow and transparency conducting layer represented in the case where with the addition of nitrogen into the mixed gas of argon and oxygen
The summary chart of the relation of square resistance.
The transverse axis of Fig. 4 for film forming when nitrogen flow (sccm), the longitudinal axis for transparency conducting layer 12 square resistance (Ω/
sq.).Fig. 4 shows a case that transparency conducting layer 12 is placed to the result of 60 minutes at atmospheric environment and 120 DEG C.
As shown in figure 4, work as to mixed gas (Ar/O2) addition nitrogen changes in flow rate when, the square of transparency conducting layer 12
Resistance changes in the range of desired high resistance state.For example, the flow of nitrogen ought be made in more than 5sccm and below 20sccm
In the range of when increasing, the square resistance of transparency conducting layer 12 correspondingly increases with the increase of nitrogen flow.That is, by right
The flow of nitrogen is adjusted, and the square resistance of transparency conducting layer 12 can be controlled.
For example, in the present embodiment, when transparency conducting layer 12 forms a film by mixed gas (Ar/O2) in oxygen ratio
The degree that transparency conducting layer 12 is difficult to be reduced is adjusted, so as to form transparency conducting layer 12.As an example, in big compression ring
In the case of transparency conducting layer 12 is placed 60 minutes at border and 120 DEG C, oxygen flow is adjusted to 2.5sccm.Also, this into
During film, independently the ratio of nitrogen is adjusted by the ratio with oxygen, the square resistance of transparency conducting layer 12 can be controlled
For defined resistance.
Thus, the reduction of oxide is reliably suppressed in a long time, and then is obtained and adjusted according to the additive amount of nitrogen
For the transparency conducting layer 12 of desired square resistance.
In addition, in the illustration of film build method, in colored filter substrate 14 formed with transparency conducting layer 12.In this implementation
In mode, colored filter substrate 14 and counter substrate 20 can also be made opposite in advance, and in colored filter substrate 14 and right
Put and inject after liquid crystal 40 between substrate 20, transparency conducting layer 12 is formed in colored filter substrate 14.In this case, it is transparent
The membrance casting condition of conductive layer 12 is also identical.
[evaluation of transparency conducting layer]
Fig. 5 is the summary chart for the light transmission for representing transparency conducting layer.
The transverse axis of Fig. 5 is wavelength (nm), and the longitudinal axis is light transmission (%).
In addition, Fig. 5 shows a case that transparency conducting layer 12 is placed to the knot of 60 minutes at atmospheric environment and 120 DEG C
Fruit.The membrance casting condition of Fig. 5 is as follows.
Target：Tin oxide/niobium oxide (10wt%)
Discharge gas：Argon (Ar)/oxygen (O2)/nitrogen (N2)
Gas stagnation pressure：More than 0.1Pa and below 1.0Pa
Argon partial pressure：0.2Pa (flow 40sccm)
Partial pressure of oxygen：0.013Pa (flow 2.5sccm)
Nitrogen partial pressure：More than 0Pa (flow 0sccm) and 0.1Pa (flow 20sccm) is below
Substrate temperature：25 DEG C of setting
As shown in figure 5, make nitrogen partial pressure more than 0Pa (flow 0sccm) and the scopes of 0.1Pa (flow 20sccm) below
In the above-mentioned membrance casting condition of interior change, under arbitrary membrance casting condition, the light transmission spectrum of transparency conducting layer 12 is all big
Cause on identical line.For example, make nitrogen partial pressure more than 0Pa (flow 0sccm) and the scopes of 0.1Pa (flow 20sccm) below
Under the above-mentioned membrance casting condition of interior change, the transmissivity of transparency conducting layer 12 is more than 94.0% in wavelength 400nm, in wavelength
It is more than 98.5% during 550nm, is more than 99.4% in wavelength 700nm.Like this, in the present embodiment, can obtain
Transparency conducting layer 12 with high light transmittance rate.
Fig. 6 and Fig. 7 is the summary chart for representing the change that the square resistance of transparency conducting layer is produced with the time.
The transverse axis of Fig. 6, Fig. 7 are the time (h), and the longitudinal axis is square resistance (Ω/sq.).
Fig. 6 shows a case that to place the result of transparency conducting layer 12 in atmospheric environment and at room temperature.
Fig. 7 shows a case that to place the result of transparency conducting layer 12 under 60 DEG C, vapor 90RH%.Fig. 6, Fig. 7's
Membrance casting condition is as follows.
Target：Tin oxide/niobium oxide (10wt%)
Discharge gas：Argon (Ar)/oxygen (O2)/nitrogen (N2)
Gas stagnation pressure：More than 0.1Pa and below 1.0Pa
Argon partial pressure：0.2Pa (flow 40sccm)
Partial pressure of oxygen：0.013Pa (flow 2.5sccm)
Nitrogen partial pressure：More than 0Pa (flow 0sccm) and 0.05Pa (flow 10sccm) is below
Substrate temperature：25 DEG C of setting
As shown in Figure 6 and Figure 7, transparency conducting layer 12 is placed under the conditions of atmospheric environment or constant temperature and humidity, it is transparent to lead
The square resistance of electric layer 12 also with desired high resistance state maintain 200 it is small when more than.Like this, according to this embodiment party
Formula, can obtain the transparency conducting layer 12 few as the deterioration produced with the time of antistatic backing.
Fig. 8 is the summary chart for the corrosion resistance for representing transparency conducting layer.
In fig. 8, transverse axis is transparency conducting layer 12 and ITO layer is immersed in phosphoric acid-nitric-acetic mixed acid (リ Application nitre jealous woman
Acid) time (minute), the longitudinal axis is square resistance (Ω/sq.).
Membrance casting condition is as follows.Partial pressure of oxygen during on film forming, with transparency conducting layer 12 and the square resistance quilt of ITO layer
Control is 1 × 108More than (Ω/sq.) and 1 × 1010The mode of (Ω/sq.) below is adjusted.
The membrance casting condition of transparency conducting layer 12：
Target：Tin oxide/niobium oxide (10wt%)
Discharge gas：Argon (Ar)/oxygen (O2)
Gas stagnation pressure：0.21Pa
Argon partial pressure：0.2Pa (flow 40sccm)
Thickness：10nm
Substrate temperature：25 DEG C of setting
The membrance casting condition of ITO layer：
Target：Indium oxide/tin oxide (10wt%)
Discharge gas：Argon (Ar)/oxygen (O2)
Gas stagnation pressure：0.23Pa
Argon partial pressure：0.2Pa (flow 40sccm)
Thickness：10nm
Substrate temperature：25 DEG C of setting
As shown in figure 8, in ITO layer, just the square resistance after film forming is 2.1 × 109(Ω/sq.).Hereafter, ITO layer is worked as
When being immersed in phosphoric acid-nitric-acetic mixed acid 10 minutes, the thickness of ITO layer is reduced, and square resistance rises to 2.5 × 1014
(Ω/sq.)。
On the other hand, in transparency conducting layer 12, just the square resistance after film forming is 2.0 × 108(Ω/sq.).Hereafter,
Although transparency conducting layer 12 is immersed in phosphoric acid-nitric-acetic mixed acid, compared with ITO layer, the reduction of thickness is pressed down
System.For example, transparency conducting layer 12 impregnated 5 minutes in phosphoric acid-nitric-acetic mixed acid after square resistance be changed into 2.8 ×
108(Ω/sq.), square resistance of the dipping after 10 minutes are changed into 3.1 × 108(Ω/sq.), square of the dipping after 20 minutes
Resistance becomes 2.3 × 108(Ω/sq.).Like this, in transparency conducting layer 12, mixed even if being immersed in phosphoric acid-nitric-acetic
Close the increase for the square resistance that the degree such as ITO layer will not occur in acid.That is, transparency conducting layer 12 is for the resistance to of acid
Corrosivity is higher for the corrosion resistance of acid than ITO layer.
In addition, in the case where film-forming temperature is 25 DEG C of membrance casting condition, transparency conducting layer 12 and ITO layer are usually uncrystalline layer.
Here, it is known in ITO layer by implementing the high temperature anneal so that crystallinity becomes good, the increase of its corrosion resistance.But
Be, liquid crystal panel handled by thinning it is thinning, when heated can due in liquid crystal air expansion and be broken.It is thus impossible to
Enough ITO layers that good crystallinity is set in liquid crystal panel.
On the other hand, in the present embodiment, transparency conducting layer 12 can be made on colored filter substrate 14 in room temperature
Form a film under environment.Moreover, even if transparency conducting layer 12 is noncrystalline, since its corrosion resistance is high, it is achieved that reliability is high
Liquid crystal panel.In addition, in liquid crystal panel 1, without carrying out the high temperature anneal for transparency conducting layer 12, further simplify
Manufacturing process.
In addition, table 1 shows the comparison of the hardness of transparency conducting layer.
[table 1]
In table 1, the condition of annealing is under atmospheric environment, 240 DEG C, 40 minutes.In addition, " HM " is Martens hardness.
" HIT " is nano-indentation hardness." HV " is Vickers hardness.Thickness is 1000nm.
As shown in table 1, the phase of the Martens hardness of transparency conducting layer 12, nano-indentation hardness and Vickers hardness and ITO layer
It is increased that the hardness answered, which is compared,.Thus, the durability of the liquid crystal panel 1 with transparency conducting layer 12 further improves.
For example, increase of the transparency conducting layer 12 due to Vickers hardness (HV), compared with the situation using ITO layer, scratch resistance
Property is excellent.
In addition, there are zinc oxide, titanium oxide as electrically conducting transparent material.However, it is known that zinc oxide film is for phosphoric acid-nitre
The tolerance of acid-acetic acid mixed acid is inferior to transparency conducting layer 12.On the other hand, the refractive index of titanium oxide layer is than transparency conducting layer 12
Height, light reflection is more prone at the interface of titanium oxide layer and the layer contacted with titanium oxide layer.
As described above, according to the present embodiment, the band electrically conducting transparent in long-term operated within range stability of characteristics can be obtained
Substrate 10, the liquid crystal panel 1 of layer.In addition, the present invention is not only defined in above-mentioned embodiment and can also be subject to various changes is
Self-evident.
Description of reference numerals
1 liquid crystal panel；
10 substrates with transparency conducting layer；
11 transparent substrates；
11a, 11b surface；
12 transparency conducting layers；
14 colored filter substrates；
15 colored filters；
20 counter substrates；
21 transparent substrates；
21a, 21b surface；
22 functional layers；
40 liquid crystal；
41 septs；
50th, 51 polarizer；
60 glass cover-plates；
70 fingers.
Claims (13)
1. a kind of substrate with transparency conducting layer, has：
Substrate；And
Transparency conducting layer, its set on the substrate, containing in niobium oxide, tantalum oxide and antimony oxide at least any one and
Tin oxide.
2. the substrate with transparency conducting layer as claimed in claim 1, wherein,
At least containing ratio of any one in the niobium oxide, the tantalum oxide and the antimony oxide is in the transparency conducting layer
In be more than 5wt% and below 15%wt.
3. the substrate with transparency conducting layer as claimed in claim 1 or 2, wherein,
The square resistance of the transparency conducting layer is 1 × 107More than (Ω/sq.) and 1 × 1010(Ω/sq.) below,
The transmissivity of the transparency conducting layer is more than 98.5% in wavelength 550nm.
4. the substrate with transparency conducting layer as described in any one of claims 1 to 3, wherein,
The thickness of the transparency conducting layer is more than 5nm and below 15nm.
5. the substrate with transparency conducting layer as described in any one of Claims 1-4, wherein,
The transparency conducting layer contains nitrogen.
6. the substrate with transparency conducting layer as described in any one of claim 1 to 5, wherein,
The substrate has transparent substrate and colored filter,
The transparent substrate is arranged between the transparency conducting layer and the colored filter.
7. a kind of liquid crystal panel, has：
Substrate with transparency conducting layer, its have the first transparent substrate, containing in niobium oxide, tantalum oxide and antimony oxide at least
The transparency conducting layer and colored filter of any one and tin oxide, first transparent substrate have the first face and the second face,
The transparency conducting layer is arranged on first face, and the colored filter is arranged on second face；
Counter substrate, it has the second transparent substrate and the sensing sensor electrode being arranged on second transparent substrate
And liquid crystal drive electronic circuit；And
Liquid crystal, it is arranged between the substrate with transparency conducting layer and the counter substrate, is used by the liquid crystal drive
Electronic circuit and by drive control.
8. liquid crystal panel as claimed in claim 7, wherein,
At least containing ratio of any one in the niobium oxide, the tantalum oxide and the antimony oxide is in the transparency conducting layer
In be more than 5wt% and below 15%wt.
9. liquid crystal panel as claimed in claim 7 or 8, wherein,
The square resistance of the transparency conducting layer is 1 × 107More than (Ω/sq.) and 1 × 1010(Ω/sq.) below,
The transmissivity of the transparency conducting layer is more than 98.5% in wavelength 550nm.
10. the liquid crystal panel as described in any one of claim 7 to 9, wherein,
The thickness of the transparency conducting layer is more than 5nm and below 15nm.
11. the liquid crystal panel as described in any one of claim 7 to 10, wherein,
The transparency conducting layer contains nitrogen.
12. a kind of manufacture method of the substrate with transparency conducting layer,
Using the target containing at least any one and tin oxide in niobium oxide, tantalum oxide and antimony oxide, it is in partial pressure of oxygen
Under the mixed-gas environment of the argon and oxygen of more than 0.005Pa and below 0.05Pa, on substrate will contain niobium oxide, tantalum oxide with
And the transparency conducting layer of at least any one and the tin oxide in antimony oxide forms a film, the niobium oxide, the oxygen in the target
At least containing ratio of any one changed in tantalum and the antimony oxide is more than 5wt% and below 15%wt.
13. the manufacture method of the substrate with transparency conducting layer as claimed in claim 12, wherein,
The mixed gas is set to contain nitrogen, in the case of being more than 0.025Pa and below 0.1Pa in the partial pressure of the nitrogen by described in
Transparency conducting layer forms a film.
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| JP2016157467 | 2016-08-10 | ||
| PCT/JP2017/011203 WO2018029886A1 (en) | 2016-08-10 | 2017-03-21 | Substrate with transparent conductive layer, liquid crystal panel and method for producing substrate with transparent conductive layer |
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| KR20210056669A (en) | 2019-11-11 | 2021-05-20 | 엘지디스플레이 주식회사 | Liquid crsytal display device |
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|---|---|---|---|---|
| JP2000281431A (en) * | 1999-03-30 | 2000-10-10 | Mitsui Mining & Smelting Co Ltd | Tin dioxide-based sintered compact, material for thin film formation and electroconductive film |
| CN1565036A (en) * | 2001-10-05 | 2005-01-12 | 普利司通股份有限公司 | Transparent electroconductive film, method for manufacture thereof, and touch panel |
| CN101605735A (en) * | 2007-01-12 | 2009-12-16 | 住友化学株式会社 | Material for transparent conductive film |
| TW201333985A (en) * | 2012-01-12 | 2013-08-16 | Geomatec Co Ltd | Transparent electrically conductive film, substrate having transparent electrically conductive film attached thereto, method for producing the same, and ips liquid crystal cell, capacitive touch panel |
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| JPS5855948A (en) | 1981-09-29 | 1983-04-02 | Ricoh Co Ltd | Electric power source device for corona discharge |
| JP3636914B2 (en) * | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | High resistance transparent conductive film, method for producing high resistance transparent conductive film, and sputtering target for forming high resistance transparent conductive film |
| JP2002073280A (en) * | 2000-08-30 | 2002-03-12 | Nippon Sheet Glass Co Ltd | Substrate for transparent touch panel and transparent touch panel |
| JP2003151360A (en) * | 2001-11-16 | 2003-05-23 | Bridgestone Corp | Transparent conductive film and touch panel |
| TWI533064B (en) * | 2014-07-09 | 2016-05-11 | 群創光電股份有限公司 | Display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000281431A (en) * | 1999-03-30 | 2000-10-10 | Mitsui Mining & Smelting Co Ltd | Tin dioxide-based sintered compact, material for thin film formation and electroconductive film |
| CN1565036A (en) * | 2001-10-05 | 2005-01-12 | 普利司通股份有限公司 | Transparent electroconductive film, method for manufacture thereof, and touch panel |
| CN101605735A (en) * | 2007-01-12 | 2009-12-16 | 住友化学株式会社 | Material for transparent conductive film |
| TW201333985A (en) * | 2012-01-12 | 2013-08-16 | Geomatec Co Ltd | Transparent electrically conductive film, substrate having transparent electrically conductive film attached thereto, method for producing the same, and ips liquid crystal cell, capacitive touch panel |
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| KR102042081B1 (en) | 2019-11-07 |
| KR20180036738A (en) | 2018-04-09 |
| JPWO2018029886A1 (en) | 2018-08-16 |
| WO2018029886A1 (en) | 2018-02-15 |
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