JP2008281799A - Method of manufacturing liquid crystal display device - Google Patents

Method of manufacturing liquid crystal display device Download PDF

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JP2008281799A
JP2008281799A JP2007126221A JP2007126221A JP2008281799A JP 2008281799 A JP2008281799 A JP 2008281799A JP 2007126221 A JP2007126221 A JP 2007126221A JP 2007126221 A JP2007126221 A JP 2007126221A JP 2008281799 A JP2008281799 A JP 2008281799A
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liquid crystal
film
common electrode
insulating film
pixel electrode
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Eriko Mase
江理子 眞瀬
Atsushi Kira
敦史 吉良
Tomoyuki Murata
奉之 村田
Ai Tanaka
愛 田中
Takashi Horiuchi
俊 堀内
Ken Maehira
謙 前平
Toru Okuno
亨 奥野
Ko Fuwa
耕 不破
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Ulvac Inc
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Ulvac Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device which has high insulation between a pixel electrode and a common electrode. <P>SOLUTION: A method includes: forming an insulation film 13 composed of SiO<SB>2</SB>film or SiN film according to a sputtering method on the common electrode 12; and forming the patterned pixel electrode 14 on the insulation film 13, whereby liquid crystal 8 is arranged on the pixel electrode 14 and the alignment of the liquid crystal 8 is changed by parallel electric field formed in the liquid crystal 8 to display letters and images. In the insulation film according to a CVD method, the pixel electrode 14 and common electrode 12 are short-circuited, while in the insulation film according to the sputtering method, hydrogen does not generate and the insulation film can be formed while keeping the substrate at a temperature less than 100°C, and hence metal does not diffuse and the short circuit does not occur. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、フリンジフィールド駆動方式の液晶表示装置に係り、特に、共通電極と画素電極の間の絶縁膜を形成する技術に関する。   The present invention relates to a fringe field drive type liquid crystal display device, and more particularly to a technique for forming an insulating film between a common electrode and a pixel electrode.

透明導電膜は、インジウム（III)酸化物(In2O3)とスズ（IV)酸化物(SnO2)の混合膜であるスズドープ酸化インジウム(以下ITOと省略)膜をはじめ、銀ドープITO、酸化インジウム・酸化亜鉛、酸化インジウム・酸化チタン、アルミニウムドープ酸化亜鉛、ガリウムドープ酸化亜鉛、カドミウムドープ酸化亜鉛、アンチモンドープ酸化錫、フッ素ドープ酸化錫、ニオブドープ酸化チタン等が開発されている。
透明導電膜は、液晶ディスプレイやプラズマディスプレイといったフラットパネルディスプレイ、有機エレクトロルミネッセンス、タッチパネル、太陽電池、電子ペーパーなどの駆動電極に多く用いられている。 The transparent conductive film includes a tin-doped indium oxide (hereinafter abbreviated as ITO) film, which is a mixed film of indium (III) oxide (In 2 O 3 ) and tin (IV) oxide (SnO 2 ), silver-doped ITO, Indium oxide / zinc oxide, indium oxide / titanium oxide, aluminum doped zinc oxide, gallium doped zinc oxide, cadmium doped zinc oxide, antimony doped tin oxide, fluorine doped tin oxide, niobium doped titanium oxide and the like have been developed.
Transparent conductive films are often used for drive electrodes such as flat panel displays such as liquid crystal displays and plasma displays, organic electroluminescence, touch panels, solar cells, and electronic paper.

透明導電膜を利用したデバイスには、例えば液晶材料を評価するテストデバイスが挙げられるが、基板上に透明導電膜を成膜、パターニングし下部透明導電膜を配置した後に窒化シリコンＳｉＮ、酸化シリコンＳｉＯ2、酸化アルミニウム（アルミナ、Ａｌ2Ｏ3）といった絶縁膜を配置し、さらに前記絶縁膜上に上部透明導電膜を配置するような構造を持つデバイスがある。 A device using a transparent conductive film includes, for example, a test device for evaluating a liquid crystal material. After forming a transparent conductive film on a substrate and patterning and arranging a lower transparent conductive film, silicon nitride SiN, silicon oxide SiO 2. There is a device having a structure in which an insulating film such as aluminum oxide (alumina, Al 2 O 3 ) is disposed and an upper transparent conductive film is disposed on the insulating film.

絶縁膜の形成方法には、ドライプロセスであるスパッタリング法および化学気相蒸着法（以下ＣＶＤ法と省略）、そしてウェットプロセスにてＳＯＧ（spin on glass）膜とよばれるＳｉＯ2膜を形成する方法があり、同じ組成の絶縁膜でも形成方法が異なると特性が異なる。 The insulating film is formed by sputtering or chemical vapor deposition (hereinafter abbreviated as CVD), which is a dry process, and a method of forming a SiO 2 film called an SOG (spin on glass) film by a wet process. Even if the insulating film has the same composition, the characteristics are different if the formation method is different.

広視野角の液晶表示装置として、近年では、フリンジフィールド駆動方式の液晶表示装置が注目されている。フリンジフィールド駆動方式では、絶縁膜を透明導電膜で挟み込んだ構造を持つため、ピンホールの有無や、絶縁破壊耐圧の大きさが問題となる。   In recent years, a fringe field drive type liquid crystal display device has attracted attention as a wide viewing angle liquid crystal display device. The fringe field driving method has a structure in which an insulating film is sandwiched between transparent conductive films, so that there is a problem with the presence or absence of pinholes and the breakdown breakdown voltage.

これらのうち、ＳＯＧ膜はシラノール化合物の溶液を加熱処理してＳｉＯ2膜を形成する手法であり、膜厚を厚く形成でき、絶縁破壊耐圧も高いが、ウェット工程であるためにスループットが悪いため、ＳＯＧ膜に代わる絶縁膜が望まれている。
上記方式の液晶表示装置は、例えば、下記文献に記載されている。
特開２００５−２３４５２７号公報 Among these, the SOG film is a method of forming a SiO 2 film by heat-treating a solution of a silanol compound, and can be formed thick and has a high breakdown voltage. Therefore, an insulating film that replaces the SOG film is desired.
The liquid crystal display device of the said system is described in the following literature, for example.
JP 2005-234527 A

本発明の課題は、フリンジフィールド構造の液晶表示装置の下部パネルを効率よく製造できる技術を提供することにある。   An object of the present invention is to provide a technique capable of efficiently manufacturing a lower panel of a liquid crystal display device having a fringe field structure.

ドライプロセスにおける絶縁膜の成膜方法として、ＣＶＤ法は成膜速度も速く膜厚分布も良いという利点があり、フリンジフィールド構造の液晶表示装置の絶縁膜に使用したいという要求がある。
しかし、ＣＶＤ法による絶縁膜では、画素電極と共通電極の間を絶縁することができない。 As a method for forming an insulating film in a dry process, the CVD method has an advantage that the film forming speed is high and the film thickness distribution is good, and there is a demand to use the insulating film for a liquid crystal display device having a fringe field structure.
However, the insulating film formed by the CVD method cannot insulate between the pixel electrode and the common electrode.

本発明の発明者等は、その原因が、ＣＶＤ法によってＳｉＯ2等の絶縁膜を形成する際に、水素が発生し、しかも成膜温度が高温であることから、透明導電膜が水素で還元されて金属原子が析出し、高温で絶縁膜中に拡散して画素電極と共通電極が短絡してしまう、と予想された。 The inventors of the present invention are that the cause is that when an insulating film such as SiO 2 is formed by the CVD method, hydrogen is generated and the film forming temperature is high, so that the transparent conductive film is reduced with hydrogen. As a result, metal atoms are deposited and diffused into the insulating film at a high temperature, so that the pixel electrode and the common electrode are expected to be short-circuited.

本発明は上記観点から創作されたものであり、透明基板と、前記透明基板上に配置された共通電極と、前記共通電極上に配置された絶縁膜と、前記絶縁膜上に配置された画素電極とを有し、前記画素電極上に配置された液晶とを有する液晶表示装置の製造方法であって、前記透明基板上に金属酸化物から成る前記共通電極を形成した後、希ガスによってＳｉＯ2ターゲット又はＳｉＮターゲットのいずれか一方又は両方のターゲットをスパッタリングし、前記共通電極表面に、ＳｉＯ2膜又はＳｉＮ膜のいずれか一方又は両方の絶縁膜を形成し、前記絶縁膜表面に、金属酸化物から成る前記画素電極を形成する液晶表示装置の製造方法である。
また、本発明は、前記絶縁膜形成中、前記透明基板の温度を１００℃未満にする液晶表示装置の製造方法である。 The present invention has been created from the above viewpoint, and includes a transparent substrate, a common electrode disposed on the transparent substrate, an insulating film disposed on the common electrode, and a pixel disposed on the insulating film. And a liquid crystal display device having a liquid crystal disposed on the pixel electrode, wherein the common electrode made of a metal oxide is formed on the transparent substrate, and then a rare gas is used to form SiO. (2) Sputtering one or both of the target and the SiN target, forming one or both of the SiO 2 film and the SiN film on the surface of the common electrode, and metal oxide on the surface of the insulating film This is a method of manufacturing a liquid crystal display device in which the pixel electrode made of a material is formed.
In addition, the present invention is a method for manufacturing a liquid crystal display device, wherein the temperature of the transparent substrate is less than 100 ° C. during the formation of the insulating film.

本発明は上記のように構成されており、ＡｒやＸｅ等の希ガスによってＳｉＯ2ターゲットやＳｉＮターゲットをスパッタリングして絶縁膜を形成しているので、成膜中に水素が発生せず、従って、金属酸化物から成る共通電極が還元されることはない。
また、スパッタリングの際に基板を加熱しなくても絶縁膜を形成できるので、１００℃未満の温度で絶縁膜を成長させることができ、共通電極中に遊離した金属が絶縁膜中を拡散することはない。 The present invention is configured as described above, and since an insulating film is formed by sputtering a SiO 2 target or a SiN target with a rare gas such as Ar or Xe, hydrogen is not generated during the film formation. The common electrode made of a metal oxide is not reduced.
In addition, since the insulating film can be formed without heating the substrate during sputtering, the insulating film can be grown at a temperature lower than 100 ° C., and the metal released in the common electrode diffuses in the insulating film. There is no.

共通電極と画素電極が短絡しない。
真空中で絶縁膜を形成できるので、ＳＯＧ膜の製造工程に比べ、作業性がよい。 The common electrode and the pixel electrode do not short-circuit.
Since the insulating film can be formed in a vacuum, the workability is better than the manufacturing process of the SOG film.

図１の符号１は、本発明の液晶表示装置の一例であり、フリンジフィールド構造が採用されている。
この液晶表示装置は、下部パネル５を有している。
下部パネル５は、ガラス基板から成る透明基板１１を有しており、透明基板１１上には、パターニングされた共通電極１２が形成された後、スパッタリング法によって、露出した共通電極１２上に、絶縁膜１３が形成されている。 Reference numeral 1 in FIG. 1 is an example of the liquid crystal display device of the present invention, and a fringe field structure is adopted.
This liquid crystal display device has a lower panel 5.
The lower panel 5 has a transparent substrate 11 made of a glass substrate. After the patterned common electrode 12 is formed on the transparent substrate 11, insulation is formed on the exposed common electrode 12 by sputtering. A film 13 is formed.

絶縁膜１３の表面上には、スパッタリング法等によって、透明導電膜が形成された後、透明導電膜がパターニングされ、櫛形やリング型等の所定形状にパターニングされた複数の画素電極１４が形成されている。   A transparent conductive film is formed on the surface of the insulating film 13 by sputtering or the like, and then the transparent conductive film is patterned to form a plurality of pixel electrodes 14 patterned into a predetermined shape such as a comb shape or a ring shape. ing.

各画素電極１４と共通電極１２は、不図示の制御回路に接続されており、共通電極１２を基準の電位とし、共通電極１２に対して所望の画素電極１４に電圧を印加できるように構成されている。
画素電極１４上には液晶８が配置されており、上部ガラス基板２１が、下部パネル５と平行に配置されている。 Each pixel electrode 14 and the common electrode 12 are connected to a control circuit (not shown), and the common electrode 12 is set as a reference potential, and a voltage can be applied to a desired pixel electrode 14 with respect to the common electrode 12. ing.
A liquid crystal 8 is disposed on the pixel electrode 14, and an upper glass substrate 21 is disposed in parallel with the lower panel 5.

上部ガラス基板２１、画素電極１４、絶縁膜１３、共通電極１２、及び透明基板１１は透明であり、透明基板１１の裏面に配置されたバックライトパネル３３の発光光は、下部偏光板３５ａと、透明基板１１と、共通電極１２と、絶縁膜１３とを透過して、液晶８に入射する。
画素電極１４と共通電極１２の間に電圧を印加すると、画素電極１４の上部の液晶の内部に、透明基板１１と平行な電界が形成される。 The upper glass substrate 21, the pixel electrode 14, the insulating film 13, the common electrode 12, and the transparent substrate 11 are transparent, and the light emitted from the backlight panel 33 disposed on the back surface of the transparent substrate 11 is emitted from the lower polarizing plate 35 a. The light passes through the transparent substrate 11, the common electrode 12, and the insulating film 13 and enters the liquid crystal 8.
When a voltage is applied between the pixel electrode 14 and the common electrode 12, an electric field parallel to the transparent substrate 11 is formed in the liquid crystal above the pixel electrode 14.

この液晶８は、透明基板１１と平行な方向の平行電界の有無によって配向が変化するように構成されており、下部偏光板３５ａと平行電界が形成された部分の液晶８ａを透過した光は、上部偏光板３５ｂも透過し、外部に放射され、明るく見える。
下部偏光板３５ａと平行電界が形成されていない部分の液晶８ｂを透過した光は、上部偏光板３５ｂを透過できず、外部からは黒色に見える。
これにより、文字や画像等を表示することが可能になる。 The liquid crystal 8 is configured such that the orientation changes depending on the presence or absence of a parallel electric field in a direction parallel to the transparent substrate 11, and the light transmitted through the liquid crystal 8a in the portion where the parallel electric field is formed with the lower polarizing plate 35a The upper polarizing plate 35b also passes through and is radiated to the outside and looks bright.
The light transmitted through the portion of the liquid crystal 8b where no parallel electric field is formed with the lower polarizing plate 35a cannot be transmitted through the upper polarizing plate 35b and appears black from the outside.
This makes it possible to display characters, images, and the like.

この液晶表示装置１の共通電極１２と画素電極１４は、透明で導電性を有する金属酸化物であり、先ず、透明基板１１上に、スパッタリング法によってＩＴＯ膜等の導電性を有する金属酸化物薄膜を形成し、ウェットエッチング法によってパターニングし、図２(ａ)に示すように、透明基板１１上に共通電極１２を形成する。   The common electrode 12 and the pixel electrode 14 of the liquid crystal display device 1 are transparent and conductive metal oxides. First, a conductive metal oxide thin film such as an ITO film is formed on the transparent substrate 11 by sputtering. And patterned by a wet etching method to form the common electrode 12 on the transparent substrate 11 as shown in FIG.

次いで、スパッタリング法によって、ＳｉＯ2ターゲットや、ＳｉＮターゲットを希ガスでスパッタリングし、同図(ｂ)に示すように、共通電極１２上に絶縁膜１３を形成し、同図(ｃ)に示すように、絶縁膜１３上に、スパッタリング法によってＩＴＯ膜等の導電性を有する金属酸化物薄膜１７を形成し、同図(ｄ)に示すように、ウェットエッチング法によってパターニングし、画素電極１４を形成する。
画素電極１４上に液晶８と上部ガラス基板２１と下部偏光板３５ａと上部偏光板３５ｂとバックライトパネル３３とを配置すると、図１の液晶表示装置１が得られる。 Next, a sputtering method is used to sputter a SiO 2 target or a SiN target with a rare gas to form an insulating film 13 on the common electrode 12 as shown in FIG. 5B, as shown in FIG. Then, a metal oxide thin film 17 having conductivity such as an ITO film is formed on the insulating film 13 by sputtering, and patterning is performed by wet etching as shown in FIG. To do.
When the liquid crystal 8, the upper glass substrate 21, the lower polarizing plate 35a, the upper polarizing plate 35b, and the backlight panel 33 are arranged on the pixel electrode 14, the liquid crystal display device 1 of FIG. 1 is obtained.

図３(ａ)、(ｂ)の符号２は、液晶表示装置１にの絶縁膜１３を評価するため用いる評価用素子であり、同図(ａ)は平面図、同図(ｂ)は断面図である。
図１の液晶表示装置１と同じ部材には同じ符号を付すと、この評価用素子２は、パイレックスガラス７０５９（コーニング社製）から成る透明基板１１を有しており、該透明基板１１上にはパターニングされたＩＴＯ膜から成る共通電極１２が配置されている。 Reference numeral 2 in FIGS. 3A and 3B denotes an evaluation element used for evaluating the insulating film 13 in the liquid crystal display device 1. FIG. 3A is a plan view, and FIG. FIG.
When the same reference numerals are given to the same members as those in the liquid crystal display device 1 in FIG. 1, the evaluation element 2 has a transparent substrate 11 made of Pyrex glass 7059 (manufactured by Corning), on the transparent substrate 11. A common electrode 12 made of a patterned ITO film is disposed.

共通電極１２上には、下記条件で形成された絶縁膜１３が配置されており、絶縁膜１３上には、パターニングされたＩＴＯ膜から成る画素電極１４が配置されている。
符号１９は引出電極であり、厚さ５ｎｍのCr膜と厚さ５ｎｍのAu膜との積層膜で構成されており、共通電極１２に接続されている。 An insulating film 13 formed under the following conditions is disposed on the common electrode 12, and a pixel electrode 14 made of a patterned ITO film is disposed on the insulating film 13.
Reference numeral 19 denotes an extraction electrode, which is composed of a laminated film of a Cr film having a thickness of 5 nm and an Au film having a thickness of 5 nm, and is connected to the common electrode 12.

下記条件で、実施例１〜５，比較例１、２の評価用素子２を作成し、画素電極１４と共通電極１２の間に２〜４Ｖの電圧を印加し、絶縁膜１３の絶縁性を調べた。
絶縁膜１３の形成条件と測定結果を下記表１に示す。 Under the conditions described below, the evaluation elements 2 of Examples 1 to 5 and Comparative Examples 1 and 2 were created, and a voltage of 2 to 4 V was applied between the pixel electrode 14 and the common electrode 12 to improve the insulation of the insulating film 13. Examined.
The formation conditions and measurement results of the insulating film 13 are shown in Table 1 below.

Figure 2008281799
Figure 2008281799

実施例２では、スパッタリング法によって基板を加熱せずに１５０ｎｍのＳｉＮ膜を形成した後、その表面に、ＣＶＤ法によって基板温度３００℃で１５０ｎｍのＳｉＮ膜を積層した。
ＣＶＤ法による絶縁膜１３は、画素電極１４と共通電極１２の間が短絡してしまっているが、スパッタリング法によって形成された絶縁膜１３では、短絡せず、絶縁性評価に合格している。 In Example 2, a 150 nm SiN film was formed without heating the substrate by sputtering, and then a 150 nm SiN film was laminated on the surface at a substrate temperature of 300 ° C. by CVD.
In the insulating film 13 formed by the CVD method, the pixel electrode 14 and the common electrode 12 are short-circuited. However, the insulating film 13 formed by the sputtering method is not short-circuited and passes the insulating evaluation.

共通電極１２は、スパッタリング法による膜厚２０ｎｍのＩＴＯ膜である。共通電極１２、画素電極１４はパターニングされたＩＴＯを用いた
表１中のスパッタリング法による絶縁膜１３の形成条件は、ターゲットはＳｉＯ2板又はＳｉＮ板を用い、スパッタリングガスにはアルゴンガスを用いた。酸素ガスや窒素ガスは添加していない。透明基板１１は加熱せず、１００℃未満の温度で絶縁膜１３を成長させた。 The common electrode 12 is an ITO film having a thickness of 20 nm formed by sputtering. The common electrode 12 and the pixel electrode 14 use patterned ITO. The conditions for forming the insulating film 13 by sputtering in Table 1 were SiO 2 plate or SiN plate for the target, and argon gas was used for the sputtering gas. . Oxygen gas and nitrogen gas are not added. The transparent substrate 11 was not heated, and the insulating film 13 was grown at a temperature lower than 100 ° C.

また、表１中のＣＶＤ法による絶縁膜１３の形成条件は、絶縁膜１３がＳｉＯ2膜の場合(比較例１)は、テトラエトキシシラン（ＴＥＯＳ）と酸素（O2）を原料ガスとして、基板温度３００℃で、真空槽内で原料ガスのプラズマを形成してＳｉＯ2膜を成長させた。
絶縁膜１３がＣＶＤ法によるＳｉＮ膜の場合は、ＳｉＨ4ガスと、ＮＨ3ガスと、Ｎ2ガスから成る原料ガスを用い、基板温度３００℃にて、真空槽内で原料ガスのプラズマを形成し、ＳｉＮ膜を成長させた。 The formation conditions of the insulating film 13 by the CVD method in Table 1 are as follows. When the insulating film 13 is a SiO 2 film (Comparative Example 1), tetraethoxysilane (TEOS) and oxygen (O 2 ) are used as source gases. At a substrate temperature of 300 ° C., a source gas plasma was formed in a vacuum chamber to grow a SiO 2 film.
When the insulating film 13 is a SiN film formed by CVD, a source gas plasma is formed in a vacuum chamber at a substrate temperature of 300 ° C. using a source gas composed of SiH 4 gas, NH 3 gas, and N 2 gas. Then, a SiN film was grown.

実施例１〜３、比較例１、２の共通電極１２の膜厚と画素電極１４の膜厚は２０ｎｍにし、実施例４、５の共通電極１２の膜厚と画素電極１４の膜厚は５ｎｍである。
なお、上記実施例では、透明導電膜としてＩＴＯ膜を用いたが、酸化亜鉛や酸化スズ等の他の透明導電膜を用いても結果は同じである。 The film thickness of the common electrode 12 and the film thickness of the pixel electrode 14 in Examples 1 to 3 and Comparative Examples 1 and 2 are set to 20 nm, and the film thickness of the common electrode 12 and the film thickness of the pixel electrode 14 in Examples 4 and 5 are 5 nm. It is.
In the above embodiment, the ITO film is used as the transparent conductive film, but the same result is obtained even if another transparent conductive film such as zinc oxide or tin oxide is used.

また、上記実施例では、絶縁膜１３としてＳｉＯ2膜又はＳｉＮ膜を用いたが、他の絶縁膜１３（アルミナ）でも、スパッタリング法によって形成すれば共通電極１２と画素電極１４の間の絶縁性を確保できると予想されている。 In the above embodiment, the SiO 2 film or the SiN film is used as the insulating film 13. However, the insulating property between the common electrode 12 and the pixel electrode 14 can also be formed by using other insulating films 13 (alumina) by sputtering. Is expected to be secured.

本発明によって得られる液晶表示装置の例Examples of liquid crystal display devices obtained by the present invention (ａ)〜(ｄ)：その液晶表示装置の製造工程を説明するための図(a)-(d): The figure for demonstrating the manufacturing process of the liquid crystal display device (ａ)：評価用素子の平面図 (ｂ)：断面図(a): Plan view of evaluation element (b): Cross section

符号の説明Explanation of symbols

１１……透明基板
１２……共通電極
１３……絶縁膜
１４……画素電極 11 ... Transparent substrate 12 ... Common electrode 13 ... Insulating film 14 ... Pixel electrode

Claims (2)

透明基板と、
前記透明基板上に配置された共通電極と、
前記共通電極上に配置された絶縁膜と、
前記絶縁膜上に配置された画素電極とを有し、
前記画素電極上に配置された液晶とを有する液晶表示装置の製造方法であって、
前記透明基板上に金属酸化物から成る前記共通電極を形成した後、希ガスによってＳｉＯ2ターゲット又はＳｉＮターゲットのいずれか一方又は両方のターゲットをスパッタリングし、前記共通電極表面に、ＳｉＯ2膜又はＳｉＮ膜のいずれか一方又は両方の絶縁膜を形成し、前記絶縁膜表面に、金属酸化物から成る前記画素電極を形成する液晶表示装置の製造方法。 A transparent substrate;
A common electrode disposed on the transparent substrate;
An insulating film disposed on the common electrode;
A pixel electrode disposed on the insulating film;
A method for manufacturing a liquid crystal display device having a liquid crystal disposed on the pixel electrode,
After the common electrode made of a metal oxide is formed on the transparent substrate, either or both of a SiO 2 target and a SiN target are sputtered with a rare gas, and a SiO 2 film or a SiN target is formed on the surface of the common electrode. A method for manufacturing a liquid crystal display device, comprising forming one or both of the insulating films and forming the pixel electrode made of a metal oxide on the surface of the insulating film. 前記絶縁膜形成中、前記透明基板の温度を１００℃未満にする請求項１記載の液晶表示装置の製造方法。   The method for manufacturing a liquid crystal display device according to claim 1, wherein the temperature of the transparent substrate is set to less than 100 ° C. during the formation of the insulating film.
JP2007126221A 2007-05-11 2007-05-11 Method of manufacturing liquid crystal display device Pending JP2008281799A (en)

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Publication number Priority date Publication date Assignee Title
US8947625B2 (en) 2011-03-14 2015-02-03 Samsung Display Co., Ltd. Thin film transistor array panel and liquid crystal display device including the same

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JP2001183685A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Liquid crystal display device
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JP2007086789A (en) * 2005-09-23 2007-04-05 Samsung Electronics Co Ltd Method of manufacturing display panel for flexible display device
JP2007101896A (en) * 2005-10-04 2007-04-19 Lg Philips Lcd Co Ltd Liquid crystal display apparatus and method for manufacturing liquid crystal display apparatus

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JP2001183685A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Liquid crystal display device
JP2002124469A (en) * 2001-07-19 2002-04-26 Semiconductor Energy Lab Co Ltd Method for fabricating semiconductor device
JP2006189775A (en) * 2004-12-31 2006-07-20 Lg Phillips Lcd Co Ltd Liquid crystal display device and manufacturing method thereof
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JP2007101896A (en) * 2005-10-04 2007-04-19 Lg Philips Lcd Co Ltd Liquid crystal display apparatus and method for manufacturing liquid crystal display apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8947625B2 (en) 2011-03-14 2015-02-03 Samsung Display Co., Ltd. Thin film transistor array panel and liquid crystal display device including the same

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