CN110546300B - Sputtering target for transparent conductive film - Google Patents
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- CN110546300B CN110546300B CN201880027441.7A CN201880027441A CN110546300B CN 110546300 B CN110546300 B CN 110546300B CN 201880027441 A CN201880027441 A CN 201880027441A CN 110546300 B CN110546300 B CN 110546300B
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
The present invention relates to a sputtering target for a transparent conductive film, which is formed from an oxide sintered body containing In, Sn, Si and O as constituent elements, wherein the In content ratio is In 2 O 3 More than 25.0 mass% and not more than 82.0 mass% in terms of Sn content 2 Converted to 15.0-65.0 mass%, and the content of Si is SiO 2 Is converted to 3.0 mass% or more and less than 10.0 mass%. The sputtering target for forming a conductive film of the present invention has low resistivity, can perform DC sputtering, and can form a transparent conductive film having high film resistivity and high chemical resistance by sputtering.
Description
Technical Field
The present invention relates to a sputtering target for a transparent conductive film, and more particularly, to a sputtering target for a transparent conductive film which can perform DC sputtering and can form a transparent conductive film having high chemical resistance.
Background
In the case of a transparent conductive film used In an In-cell (In-cell) type electrostatic capacitance type touch panel, high resistance and high transmittance are required In order to prevent the display from being hindered by low-frequency noise. This is because a high-frequency signal for touch sensing is blocked when the conductive film has low resistance.
The conductive film is generally formed by sputtering a sputtering target.
ITO is mainly used as a high-transmittance material, but because ITO has low resistance, it cannot be used for a conductive film of an embedded capacitive touch panel.
As a technique for obtaining a high-resistance material, there is a technique of adding an insulating oxide to ITO, but this is a method of adding a large amount of impurities to ITO, and therefore, the optical characteristics of the conductive film are lowered, and the crystallinity of the film is broken, and therefore, the chemical resistance of the conductive film is lowered. If the conductive film has low chemical resistance, it is difficult to use the conductive film in applications where the conductive film is used without being dissolved by a chemical agent or the like, and applications where a defect occurs when the etching rate is high when the conductive film is used as a thin film.
For example, patent document 1 discloses ITO as a main raw material, 7.2 to 11.2 atomic% of silicon, and a resistivity of 10 0 ～10 3 Omega cm transparent conductive film. Patent document 2 discloses that a sputtering target for a transparent conductive film made of indium oxide, tin oxide, and silicon oxide is sputtered to have a resistivity of 0.8 to 10 × 10 -3 Omega cm transparent conductive film. However, any conductive film has low chemical resistance.
In addition, although a large number of high-resistance films have been reported, the resistance of a target used for forming the film also increases. If the target resistance is high, sputtering by a DC power supply is not possible, and a film having a high resistance needs to be formed by an RF power supply, resulting in poor productivity.
Documents of the prior art
Patent document
Patent document 1: japanese patent No. 5855948
Patent document 2: japanese patent No. 4424889
Disclosure of Invention
Problems to be solved by the invention
The invention aims to provide a sputtering target which can perform DC sputtering and can form a transparent conductive film with high resistivity and high chemical resistance.
Means for solving the problems
The sputtering target for transparent conductive film of the present invention is formed of an oxide sintered body, the constituent elements of the oxide sintered body are In, Sn, Si and O, and the In content ratio is In 2 O 3 More than 25.0 mass% and not more than 82.0 mass% in terms of Sn content ratio in SnO 2 Converted to 15.0-65.0 mass%, and the content of Si is SiO 2 Is converted to 3.0 mass% or more and less than 10.0 mass%.
The sputtering target for transparent conductive film preferably has a specific resistance of 2X 10 2 Omega cm or less.
The sputtering target for transparent conductive film preferably has a relative density of 98.0% or more.
The transparent conductive film of the present invention contains In, Sn, Si and O as constituent elements, and the content ratio of In is In 2 O 3 28.0 to 87.0 mass% in terms of Sn content 2 Converted to 12.0-63.0 mass%, and the content of Si is SiO 2 Is converted to 1.0 to 9.0 mass%.
The film resistivity of the transparent conductive film is preferably 1.0X 10 0 Omega cm or more, and the etching rate is preferably less than
The method for producing a transparent conductive film of the present invention forms a film by sputtering the sputtering target for a transparent conductive film.
In the method for producing the transparent conductive film, the film resistivity of the transparent conductive film is preferably 1.0 × 10 0 Omega cm or more, and the etching rate is preferably less than
Effects of the invention
The sputtering target for forming a conductive film of the present invention has low resistivity, can perform DC sputtering, and can form a transparent conductive film having high film resistivity and high chemical resistance by sputtering. The method for manufacturing a transparent conductive film of the present invention can manufacture a transparent conductive film having high resistivity and high chemical resistance.
Detailed Description
The sputtering target for transparent conductive film of the present invention is formed of an oxide sintered body, the constituent elements of the oxide sintered body are In, Sn, Si and O, and the In content ratio is In 2 O 3 More than 25.0 mass% and not more than 82.0 mass% in terms of Sn content ratio in SnO 2 Converted to 15.0-65.0 mass%, and the content of Si is SiO 2 Is converted to 3.0 mass% or more and less than 10.0 mass%. The target formed of an oxide sintered body such as the sputtering target for a transparent conductive film of the present invention may contain inevitable impurities derived from raw materials and the like, and the sputtering target for a transparent conductive film of the present invention may contain inevitable impurities. The content of inevitable impurities in the sputtering target for transparent conductive film of the present invention is usually 100ppm or less.
In the present invention, the constituent elements are constituent elements other than inevitable impurities in the sputtering target or the transparent conductive film, and the content ratio of each constituent element is a content ratio of each constituent element in the entire sputtering target or the transparent conductive film.
The sputtering target for transparent conductive film of the present invention is characterized in that the content of Sn is higher than that of a usual ITO sputtering target, and SiO is used 2 The Si content is 3.0 mass% or more and less than 10.0 mass% in terms of Si content.
The oxide sintered body contains In, Sn, Si, and O as constituent elements. In the above oxide sintered body, the In content ratio is In 2 O 3 More than 25.0 mass% and 82.0 mass% or less, preferably 31.0 mass% or more and 76.0 mass% or less, more preferably 31.0 mass% or more and 70.0 mass% or less in terms of Sn content SnO 2 15.0 to 65.0 mass%, preferably 20.0 to 60.0 mass%, more preferably 25.0 to 60.0 mass%, and Si in terms ofIn the ratio of SiO 2 The content is preferably 3.0% by mass or more and less than 10.0% by mass, preferably 3.0% by mass or more and 9.9% by mass or less, more preferably 4.0% by mass or more and 9.0% by mass or less, and further preferably 5.0% by mass or more and 9.0% by mass or less in terms of the content. The composition of the sputtering target for transparent conductive film is the same as that of the oxide sintered body.
The sputtering target for a transparent conductive film formed of the oxide sintered body having the above composition has low resistivity, and thus can be DC sputtered. The resistivity of the sputtering target for transparent conductive film is preferably 2.0X 10 2 Omega cm or less, more preferably 1.5X 10 2 Not more than Ω cm, more preferably 1.0X 10 2 Omega cm or less. Generally, if the target has a resistivity of 10 2 And the order of omega cm or less, DC sputtering can be performed.
The sputtering target for a transparent conductive film formed of the oxide sintered body having the above composition can form a transparent conductive film having a high specific resistance by sputtering. Therefore, when the transparent conductive film obtained by the sputtering target for a transparent conductive film is used for an embedded capacitive touch panel, it is possible to prevent the display operation from being hindered by low-frequency noise. When the above sputtering target for transparent conductive film is used, a film having a thickness of 1.0X 10 can be obtained 0 A transparent conductive film having a film resistivity of not less than Ω cm. The film resistivity of the transparent conductive film is preferably 1.1X 10 0 Omega cm or more, more preferably 1.2X 10 0 Omega cm or more. The upper limit of the film resistivity of the transparent conductive film is not particularly limited, but is usually 5.0X 10 5 Ωcm。
The sputtering target for a transparent conductive film formed from the oxide sintered body having the above composition can form a transparent conductive film having high chemical resistance by sputtering. The transparent conductive film obtained from the sputtering target for transparent conductive film is amorphous. When the transparent conductive film is amorphous, chemical resistance is generally low. When the amorphous transparent conductive film is crystallized by heat treatment, a transparent conductive film having high chemical resistance can be obtained, but the film resistivity is low. The transparent conductive film obtained from the sputtering target for transparent conductive film is amorphous and has chemical resistanceHigh in character. High chemical resistance can be evaluated by slow etch rates. The etching rate of the transparent conductive film obtained from the sputtering target for transparent conductive film is preferably less than
More preferably
Hereinafter, it is more preferable that
Hereinafter, it is more preferable that
The following. The etching rate of the transparent conductive film can be calculated from the difference in film thickness (height difference) between the portion subjected to etching and the portion not subjected to etching and the etching time by immersing a part of the transparent conductive film in a transparent conductive film etching solution (ITO-07N manufactured by kanto chemical corporation) heated to 40 ℃ for 6 minutes.
The film resistivity of the transparent conductive film obtained by sputtering the sputtering target for a transparent conductive film formed of an oxide sintered body containing In, Sn, and Si is higher as the content of Sn is higher. Therefore, in order to obtain a transparent conductive film having high film resistivity, at least one of the Sn content and the Si content may be increased. That is, even if the Sn content is small, if the Si content is increased accordingly, a transparent conductive film having high film resistivity can be obtained. However, with respect to the chemical resistance of the transparent conductive film, even if the Si content is increased, the Sn content does not increase as long as it is small. Therefore, in order to obtain sufficient chemical resistance of the transparent conductive film, it is necessary to make the Sn content of the target SnO 2 Converted to 15.0 mass% or more. In addition, the Sn content of the target is SnO 2 In the case of 15.0 mass% or more in terms of Si content, Si content is SiO in order to obtain a transparent conductive film having a sufficiently high film resistivity 2 Converted to 3.0% by mass or more, but not necessarily 10.0% by mass. On the other hand, if the Sn content of the target is SnO 2 If the conversion exceeds 65.0 mass%, the resistivity becomes high, and DC sputtering cannot be performed. That is, the sputtering target for transparent conductive film of the present invention is prepared by adding SnO 2 A Sn content of 15.0 to 65.0 mass% in terms of SiO 2 The combination of Si contents in terms of 3.0 mass% or more and less than 10.0 mass% enables DC sputtering, and the combination can achieve both high film resistivity and high chemical resistance of the formed transparent conductive film.
The relative density of the sputtering target for a transparent conductive film is preferably 98.0% or more, more preferably 98.5% or more, and still more preferably 99.0% or more. When the relative density is 98.0% or more, sputtering can be performed efficiently without generating nodules and arcs. The upper limit of the relative density is not particularly limited, and may be more than 100%. The above relative density is a value measured based on the archimedes method.
The sputtering target for a transparent conductive film can be produced, for example, by the following method.
First, raw material powders are mixed. The raw material powder is usually In 2 O 3 Powder, SnO 2 Powder and SiO 2 And (3) powder. In 2 O 3 Powder, SnO 2 Powder and SiO 2 The powders are mixed so that the contents of In, Sn, and Si In the obtained sintered body are within the above ranges, respectively. In the mixed powder obtained by mixing the raw material powders was confirmed 2 O 3 Powder, SnO 2 Powder and SiO 2 The content ratio of the powder to In the oxide sintered body 2 O 3 Converted In content ratio, SnO 2 Converted Sn content ratio and SiO 2 The converted Si content ratios are uniform.
Since each raw material powder is generally aggregated in particles, it is preferable to grind and then mix them, or grind them while mixing.
The method of pulverizing and mixing the raw material powder is not particularly limited, and the raw material powder may be put in a pot, and pulverized or mixed by a ball mill, for example.
The obtained mixed powder may be directly molded to prepare a molded body and sintered, but if necessary, a binder may be added to the mixed powder to prepare a molded body. As the binder, a binder used when a molded body is obtained by a known powder metallurgy method, for example, polyvinyl alcohol, an acrylic emulsion binder, or the like can be used. Alternatively, a dispersion medium may be added to the mixed powder to prepare a slurry, and the slurry may be spray-dried to prepare particles, which may be molded.
The molding method may be any method conventionally used in powder metallurgy, for example, cold pressing or CIP (cold isostatic pressing).
Alternatively, the mixed powder may be preliminarily pressed to prepare a preform, and the pulverized powder obtained by pulverizing the preform may be pressed to prepare a compact.
The molded body may be produced by a wet molding method such as a slip casting method.
The relative density of the molded article is usually 50 to 75%.
The obtained compact is fired to obtain a sintered body. The firing furnace used for firing is not particularly limited as long as the cooling rate can be controlled during cooling, and may be one that is generally used in powder metallurgy. As the firing atmosphere, an oxygen-containing atmosphere is suitable.
The temperature rise rate is usually 100 to 500 ℃/h from the viewpoint of densification and crack prevention. The firing temperature is 1300-1600 ℃, preferably 1400-1600 ℃. When the firing temperature is within the above range, a sintered body having a high density can be obtained. The holding time at the firing temperature is usually 3 to 30 hours, preferably 5 to 20 hours. If the holding time is within the above range, a sintered body having a high density can be easily obtained.
After the completion of the holding at the above temperature, the temperature in the furnace is lowered to cool the furnace at a temperature of usually 300 ℃/hr or lower, preferably 100 ℃/hr or lower.
The thus obtained sintered body is cut into a desired shape as necessary, and subjected to grinding or the like, whereby the sputtering target for a transparent conductive film can be obtained.
The shape of the sputtering target for a transparent conductive film is not particularly limited, and may be a flat plate shape, a cylindrical shape, or the like.
The sputtering target for transparent conductive film is generally used by bonding to a base material. The substrate is typically Cu, Al, Ti or stainless steel. As the bonding material, a bonding material used for bonding a conventional ITO target, for example, In metal, can be used. The bonding method is also the same as the conventional method for bonding an ITO target.
The transparent conductive film can be formed by sputtering the sputtering target for transparent conductive film. As described above, since the sputtering target for a transparent conductive film has low resistivity, it can perform not only RF sputtering but also DC sputtering.
By sputtering the sputtering target for a transparent conductive film, a transparent conductive film having In, Sn, Si, and O as constituent elements can be obtained. The content ratio of Sn and the content ratio of Si in the obtained transparent conductive film tend to be lower than those in the transparent conductive film sputtering target. Therefore, In the transparent conductive film, the content ratio of In is In 2 O 3 Is 28.0 to 87.0 mass%, preferably 33.0 to 80.0 mass%, in terms of Sn content in SnO 2 Is 12.0 to 63.0 mass%, preferably 18.0 to 58.0 mass%, in terms of SiO, and the content of Si is 2 The content is 1.0 mass% or more and 9.0 mass% or less, preferably 2.0 mass% or more and 9.0 mass% or less in terms of the content. As described above, the obtained transparent conductive film has high film resistivity and chemical resistance. As in the case of the sputtering target for a transparent conductive film, the transparent conductive film may contain inevitable impurities. The content of inevitable impurities in the transparent conductive film is usually 100ppm or less.
Examples
The following shows the measurement methods used in the following examples and comparative examples.
1. Relative density of target
The relative density of the sputtering target for transparent conductive film was measured by the archimedes method. Specifically, the mass in the air of the target is divided by the volume (mass in water of the target/specific gravity of water at the measurement temperature) to be compared with the theoretical density ρ (g/cm) based on the following formula (X) 3 ) The value of (c) is defined as the relative density (unit: %).
ρ＝((C1/100)/ρ1+(C2/100)/ρ2+…+(Ci/100)/ρi) -1 (X)
(in the formula, C1 to Ci each represent the content (mass%) of a constituent material of the target, and ρ 1 to ρ i each represent the density (g/cm) of a constituent material corresponding to C1 to Ci 3 )。)
In the following examples and comparative examples, the substance (raw material) used for the production of the target was In 2 O 3 、SnO 2 、SiO 2 Therefore, for example, the theoretical density ρ can be calculated by applying the following parameters to the formula (X).
C1: in used In the target 2 O 3 Mass% of raw materials
ρ1：In 2 O 3 Density of (7.18 g/cm) 3 )
C2: SnO used in target 2 Mass% of the raw materials
ρ2：SnO 2 Density of (6.95 g/cm) 3 )
C3: SiO for use in targets 2 Mass% of the raw materials
ρ3：SiO 2 Density of (2.20 g/cm) 3 )
2. Resistivity of the target
The resistivity of the sputtering target was measured in AUTO RANGE mode by using Loresta (registered trademark) HP MCP-T410 (TYPE ESP with in-line 4 probe) manufactured by mitsubishi chemical corporation, with a probe brought into contact with the surface of the sintered body after processing.
3. Film resistivity of transparent conductive film
The film resistivity of the transparent conductive film was measured by using a four-probe measuring apparatus K-705RS manufactured by Wai Kagaku K.K.
4. Etch rate of transparent conductive film
The etching rate of the transparent conductive film was calculated by immersing a part of the transparent conductive film in a transparent conductive film etching solution (ITO-07N manufactured by kanto chemical) heated to 40 ℃ for 6 minutes, measuring the difference in level between the portion subjected to etching and the portion not subjected to etching using a stylus-type surface shape measuring instrument P-15 manufactured by KLA-Tencor, and dividing the difference in level by the etching time.
5. Content ratio of In, Sn and Si In the transparent conductive film
For the measurement, a transparent conductive film formed on a copper foil was used. The In and Sn content ratios were measured by an acid decomposition ICP-OES method using ICP emission spectrometer 720ICP-OES manufactured by Agilent Technologies, and the Si content ratio was measured by a molybdenum blue absorptiometry using spectrophotometer U-2900 manufactured by Hitachi.
[ examples and comparative examples ]
(production of sputtering target)
In is mixed with 2 O 3 Powder, SnO 2 Powder and SiO 2 The powders were mixed in the ratio shown in table 1 using a ball mill to prepare mixed powders.
In the mixed powder, 6 mass% of polyvinyl alcohol diluted to 4 mass% was added to the mixed powder, and the polyvinyl alcohol and the powder were sufficiently fused using a mortar and passed through a 5.5 mesh sieve. The obtained powder was mixed at 200kg/cm 2 Pre-pressing under the conditions of (1), and pulverizing the obtained preform with a mortar. Filling the obtained pulverized powder into a mold for pressing at a pressing pressure of 1t/cm 2 Then, the mixture was molded for 60 seconds to obtain a molded article.
The obtained molded body was placed in a firing furnace, oxygen was fluidized at 1L/h in the furnace, the firing atmosphere was an oxygen-fluidized atmosphere, the temperature rise rate was 350 ℃/h, the firing temperature was 1550 ℃, and the holding time at the firing temperature was 9 h.
Then, the mixture was cooled at a cooling rate of 100 ℃ per hour.
In the above manner, an oxide sintered body was obtained.
The oxide sintered body is cut to produce a sputtering target. The relative density and resistivity of the sputtering target were measured by the methods described above. The results are shown in Table 1.
(production of transparent conductive film)
The sputtering target was bonded to a copper backing plate with In solder, sputtering was performed under the following conditions, and a film having a thickness of film formed on a glass substrate for measuring resistivity and etching rate was formed
The transparent conductive film of (3) has a film formed on a copper foil having a thickness of 1.1mm for the purpose of measuring the Sn content ratio and the Si content ratio of the transparent conductive film
The transparent conductive film of (1). In comparative example 5, since the target had a high resistivity and no discharge was generated, DC sputtering was not performed.
The device comprises the following steps: DC magnetron sputtering device, exhaust system cryopump, rotary pump
Reaching the vacuum degree: 1X 10 -4 Pa
Sputtering pressure: 0.4Pa
Oxygen flow rate: 0 to 2.5sccm
The film resistivity, etching rate, In content ratio, Sn content ratio, and Si content ratio of the obtained transparent conductive film were measured by the above-described methods. The oxygen flow rate is appropriately adjusted to a condition that an amorphous transparent conductive film is obtained and the resistivity of the film is the lowest. The results are shown in Table 1.
Claims (11)
1. A sputtering target for a transparent conductive film, which is formed from an oxide sintered body containing In, Sn, Si and O as constituent elements, the In content being In 2 O 3 More than 25.0 mass% and 60.0 mass% or less in terms of SnIn a content ratio of SnO 2 Is 35.0 to 65.0 mass% in terms of Si content and SiO 2 Is 4.0 mass% or more and less than 10.0 mass% in terms of the content.
2. The sputtering target for transparent conductive film according to claim 1, wherein the resistivity of the sputtering target for transparent conductive film is 2.0 x 10 2 Omega cm or less.
3. The sputtering target for a transparent conductive film according to claim 1 or 2, wherein the relative density of the sputtering target for a transparent conductive film is 98.0% or more.
4. A transparent conductive film formed by forming a sputtering target for a transparent conductive film according to any one of claims 1 to 3.
5. The transparent conductive film according to claim 4, wherein the constituent elements are In, Sn, Si and O, and the content ratio of In is In 2 O 3 28.0 to 64.4 mass% in terms of Sn content ratio SnO 2 Converted into 31.2-63.0 mass%, and the content of Si is SiO 2 1.0 to 9.0 mass% in terms of the film resistivity of the transparent conductive film is 1.0 × 10 0 Omega cm or more.
6. The transparent conductive film according to claim 4, wherein in the method for producing a transparent conductive film, the condition of the oxygen flow rate is adjusted to a condition that an amorphous transparent conductive film is obtained and the film resistivity of the transparent conductive film is the lowest.
7. The transparent conductive film according to claim 5, wherein in the method for producing a transparent conductive film, the condition of the oxygen flow rate is adjusted to a condition that an amorphous transparent conductive film is obtained and the film resistivity of the transparent conductive film is the lowest.
8. The transparent conductive film according to any one of claims 4 to 7, wherein the etching rate of the transparent conductive film is
The following.
9. A method for producing a transparent conductive film, which comprises forming a film by sputtering the sputtering target for a transparent conductive film according to any one of claims 1 to 3.
10. The method for manufacturing a transparent conductive film according to claim 9, wherein the transparent conductive film has a film resistivity of 1.0 x 10 0 Omega cm or more.
11. The method for manufacturing a transparent conductive film according to claim 9 or 10, wherein the etching rate of the transparent conductive film is
The following.
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| JP2017-096385 | 2017-05-15 | ||
| JP2017096385 | 2017-05-15 | ||
| PCT/JP2018/008974 WO2018211792A1 (en) | 2017-05-15 | 2018-03-08 | Sputtering target for transparent conductive film |
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| CN110546300A CN110546300A (en) | 2019-12-06 |
| CN110546300B true CN110546300B (en) | 2022-09-30 |
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| JP (1) | JP6453528B1 (en) |
| KR (1) | KR102308510B1 (en) |
| CN (1) | CN110546300B (en) |
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| WO2023127195A1 (en) * | 2021-12-28 | 2023-07-06 | 三井金属鉱業株式会社 | Oxide sintered body, method for producing same, and sputtering target material |
| JP7214063B1 (en) * | 2021-12-28 | 2023-01-27 | 三井金属鉱業株式会社 | Oxide sintered body, manufacturing method thereof, and sputtering target material |
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| JP2003277921A (en) * | 2002-03-19 | 2003-10-02 | Nikko Materials Co Ltd | Sputtering target for high resistance transparent electroconductive film |
| JP2007138266A (en) * | 2005-11-21 | 2007-06-07 | Mitsui Mining & Smelting Co Ltd | Sputtering target for highly resistant transparent conductive film, and highly resistant transparent conductive film, and manufacturing method of highly resistant transparent conductive film |
| CN1990422A (en) * | 2005-12-26 | 2007-07-04 | 三井金属矿业株式会社 | Oxidate sintered body and method for making same, sputtering target and transparent conductive film |
| TW201333985A (en) * | 2012-01-12 | 2013-08-16 | Geomatec Co Ltd | Transparent electrically conductive film, substrate having transparent electrically conductive film attached thereto, method for producing the same, and ips liquid crystal cell, capacitive touch panel |
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| FR2416157A1 (en) | 1978-02-06 | 1979-08-31 | Huret Roger | CYCLE DERAILLEUR |
| JPS6410507A (en) * | 1987-07-02 | 1989-01-13 | Optrex Kk | Transparent conductive film and its manufacture |
| JP3501614B2 (en) * | 1997-02-26 | 2004-03-02 | 株式会社オプトロン | ITO sintered body, method of manufacturing the same, and method of forming ITO film using the ITO sintered body |
| JP4424889B2 (en) * | 2001-06-26 | 2010-03-03 | 三井金属鉱業株式会社 | Sputtering target for high resistance transparent conductive film and method for producing high resistance transparent conductive film |
| JP4175071B2 (en) * | 2002-10-04 | 2008-11-05 | 住友金属鉱山株式会社 | Oxide sintered body and sputtering target |
| JP2005135649A (en) * | 2003-10-28 | 2005-05-26 | Mitsui Mining & Smelting Co Ltd | Indium oxide based transparent conductive film and its manufacturing method |
| JP5388625B2 (en) * | 2009-02-25 | 2014-01-15 | 日東電工株式会社 | Method for producing transparent conductive laminate, transparent conductive laminate and touch panel |
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- 2018-03-08 JP JP2018535448A patent/JP6453528B1/en active Active
- 2018-03-08 CN CN201880027441.7A patent/CN110546300B/en active Active
- 2018-03-08 WO PCT/JP2018/008974 patent/WO2018211792A1/en active Application Filing
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|---|---|---|---|---|
| CN1397661A (en) * | 2001-06-26 | 2003-02-19 | 三井金属矿业株式会社 | Sputtering target for high resistance transparent conductive membrane and mfg. method of high resistance transparent conductive membrane |
| JP2003277921A (en) * | 2002-03-19 | 2003-10-02 | Nikko Materials Co Ltd | Sputtering target for high resistance transparent electroconductive film |
| JP2007138266A (en) * | 2005-11-21 | 2007-06-07 | Mitsui Mining & Smelting Co Ltd | Sputtering target for highly resistant transparent conductive film, and highly resistant transparent conductive film, and manufacturing method of highly resistant transparent conductive film |
| CN1990422A (en) * | 2005-12-26 | 2007-07-04 | 三井金属矿业株式会社 | Oxidate sintered body and method for making same, sputtering target and transparent conductive film |
| TW201333985A (en) * | 2012-01-12 | 2013-08-16 | Geomatec Co Ltd | Transparent electrically conductive film, substrate having transparent electrically conductive film attached thereto, method for producing the same, and ips liquid crystal cell, capacitive touch panel |
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| KR102308510B1 (en) | 2021-10-06 |
| CN110546300A (en) | 2019-12-06 |
| JPWO2018211792A1 (en) | 2019-06-27 |
| KR20190127826A (en) | 2019-11-13 |
| JP6453528B1 (en) | 2019-01-16 |
| TW201900911A (en) | 2019-01-01 |
| WO2018211792A1 (en) | 2018-11-22 |
| TWI707967B (en) | 2020-10-21 |
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