JP2003277921A - Sputtering target for high resistance transparent electroconductive film - Google Patents
Sputtering target for high resistance transparent electroconductive filmInfo
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- JP2003277921A JP2003277921A JP2002076037A JP2002076037A JP2003277921A JP 2003277921 A JP2003277921 A JP 2003277921A JP 2002076037 A JP2002076037 A JP 2002076037A JP 2002076037 A JP2002076037 A JP 2002076037A JP 2003277921 A JP2003277921 A JP 2003277921A
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- film
- oxide
- transparent conductive
- high resistance
- sputtering target
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高抵抗透明導電
膜、特に抵抗膜式タッチパネル等に使用され、透明度が
高く、比較的高い抵抗を持つ透明導電性膜の成膜原料に
適した特性を有する高抵抗透明導電性膜用スパッタリン
グターゲットに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for a high resistance transparent conductive film, particularly a resistive film type touch panel, and has characteristics suitable for forming a transparent conductive film having a high transparency and a relatively high resistance. The present invention relates to a sputtering target for a high resistance transparent conductive film.
【０００２】[0002]
【従来の技術】近年、抵抗膜式タッチパネルの需要が急
速に伸びている。この抵抗膜式タッチパネルは２枚の透
明導電膜を利用して、双方にある電位差を持たせてバイ
アスをかけ、スイッチが押された位置を電圧降下によっ
て特定するという構成からなっている。位置の特定を正
確に行うためには、電圧降下を精度よく測定できなけれ
ばならない。そのためには、シート抵抗が５００〜２０
００Ω／□程度の高い表面抵抗率を有する透明導電膜が
必要となる。2. Description of the Related Art In recent years, the demand for resistive touch panels has been rapidly increasing. This resistive film type touch panel has a configuration in which two transparent conductive films are used, a bias is applied with a potential difference between the two, and the position where the switch is pressed is specified by a voltage drop. In order to identify the position accurately, it is necessary to measure the voltage drop with high accuracy. For that purpose, the sheet resistance is 500 to 20.
A transparent conductive film having a high surface resistivity of about 00Ω / □ is required.
【０００３】酸化錫が１０ｗｔ．％である酸化インジウ
ムと酸化錫との複合酸化物（ＩＴＯ）の焼結体は抵抗率
が小さいために液晶ディスプレイなどの透明導電膜の成
膜原料として広く使用されている。一方、抵抗膜型透明
タッチパネル用の透明導電膜としてはシート抵抗が５０
０〜２０００Ω／□が必要とされ、これを酸化錫が１０
ｗｔ．％であるＩＴＯで実現しようとすると、膜厚が極
めて薄くなるために、膜の機械的強度、耐久性、抵抗の
均一性が損なわれてしまう。Tin oxide of 10 wt. %, A sintered body of a composite oxide of indium oxide and tin oxide (ITO) has a low resistivity and is widely used as a raw material for forming a transparent conductive film such as a liquid crystal display. On the other hand, a transparent conductive film for a resistance film type transparent touch panel has a sheet resistance of 50.
0 to 2000 Ω / □ is required, and tin oxide is 10
wt. If it is attempted to realize it with ITO, the film thickness will be extremely thin, and the mechanical strength, durability, and uniformity of resistance of the film will be impaired.
【０００４】このため、抵抗率の高い成膜原料が望まれ
るが、抵抗率の高すぎる膜で膜厚を厚くした場合、透明
度が悪くなり表示品位が低下してしまい、さらに原料の
無駄でもある。また、ガラス基板、高分子フィルムなど
の基材への付着力はＩＴＯと同等のものが望ましい。従
って、比較的高い抵抗率（ＩＴＯの５０〜２００倍程
度）を有し、さらに基材へ付着力がＩＴＯと同等である
透明導電性膜の成膜原料が望まれる。通常、抵抗膜型透
明タッチパネル用の透明導電膜を形成する場合、スパッ
タリングを使用して成膜されるが、上記に適するスパッ
タリングターゲットが得られていないのが現状である。For this reason, a film-forming raw material having a high resistivity is desired, but when the film thickness is increased by a film having a too high resistivity, the transparency is deteriorated and the display quality is lowered, and the raw material is also wasted. . Further, it is desirable that the adhesive force to a substrate such as a glass substrate or a polymer film is equivalent to that of ITO. Therefore, a raw material for forming a transparent conductive film, which has a relatively high resistivity (about 50 to 200 times that of ITO) and has the same adhesion to the substrate as ITO, is desired. Usually, when forming a transparent conductive film for a resistance film type transparent touch panel, the film is formed by using sputtering, but at present, a sputtering target suitable for the above has not been obtained.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記の問題を
解決したもので、高抵抗透明導電膜、特に抵抗膜式タッ
チパネル装置等の画面位置確定のために使用されるシー
ト抵抗５００〜２０００Ω／□程度の高い表面抵抗率を
有する透明導電膜の形成に有用である高抵抗透明導電性
膜用スパッタリングターゲットを提供することにある。
携帯用端末機などの使用されるタッチパネルを例にあげ
ると、例えばＰＥＴ基板のような材料に成膜されるが、
熱、湿度、アルカリ腐蝕、屈曲やカールなどの機械的変
形、ペン衝突摩耗などの種々の環境に耐える必要がある
が、本発明の高抵抗透明導電性膜用スパッタリングター
ゲットで成膜した透明導電膜はこのような問題も解決す
ることができる。SUMMARY OF THE INVENTION The present invention solves the above problems, and has a sheet resistance of 500 to 2000 Ω /, which is used for determining the screen position of a high resistance transparent conductive film, especially a resistance film type touch panel device. It is to provide a sputtering target for a high resistance transparent conductive film, which is useful for forming a transparent conductive film having a surface resistivity as high as □.
Taking a touch panel used in a portable terminal as an example, a film is formed on a material such as a PET substrate.
It is necessary to withstand various environments such as heat, humidity, alkaline corrosion, mechanical deformation such as bending and curling, and pen impact abrasion, but a transparent conductive film formed by the sputtering target for high resistance transparent conductive film of the present invention. Can solve such problems.
【０００６】[0006]
【課題を解決するための手段】本発明のターゲット材
は、従来から広く用いられている酸化錫重量の割合が酸
化インジウムと酸化錫の重量の合計に対して０．０２〜
０．１０である酸化インジウムと酸化錫を主成分とする
焼結体であり、これに抵抗を増加させる副成分を添加す
ることにより、上記の問題を解決できるとの知見を得
た。この知見に基づき、本発明は、
１．酸化インジウムと酸化錫を主成分とする焼結体であ
って、さらに酸化ケイ素又は酸化チタンの少なくとも一
方を含有することを特徴とする高抵抗透明導電性膜用ス
パッタリングターゲット
２．酸化錫重量の割合が酸化インジウムと酸化錫の重量
の合計に対して０．０２〜０．１０であることを特徴と
する上記１記載の高抵抗透明導電性膜用スパッタリング
ターゲット
３．酸化ケイ素の含有量が２〜４０ｗｔ．％、酸化チタ
ンの含有量が１〜５ｗｔ％であることを特徴とする上記
１又は２に記載の高抵抗透明導電性膜用スパッタリング
ターゲット
を提供する。In the target material of the present invention, the weight ratio of tin oxide, which has been widely used in the past, is 0.02 to the total weight of indium oxide and tin oxide.
It was found that the above problem can be solved by adding a sub-component that increases resistance to a sintered body containing indium oxide and tin oxide of 0.10 as main components. Based on this finding, the present invention provides: 1. A sputtering target for a high resistance transparent conductive film, which is a sintered body containing indium oxide and tin oxide as main components and further containing at least one of silicon oxide and titanium oxide. 2. The sputtering target for a high resistance transparent conductive film according to the above 1, wherein the weight ratio of tin oxide is 0.02 to 0.10 with respect to the total weight of indium oxide and tin oxide. The content of silicon oxide is 2 to 40 wt. %, And the content of titanium oxide is 1 to 5 wt%, the sputtering target for a high resistance transparent conductive film described in 1 or 2 above is provided.
【０００７】[0007]
【発明の実施の形態】ＩＴＯの抵抗率は酸化錫濃度を減
らすことにより増加させることが出来るが、得ようとす
る抵抗率のためには酸化錫組成が極めて小さくなるため
に、再現性の良い成膜原料である焼結体を得ることが困
難になる。従って、ＩＴＯとしては安定な焼結体が得ら
れる酸化錫重量の割合が酸化インジウムと酸化錫の重量
の合計に対して０．０２〜０．１０であることが望まし
い。さらに非導電性物質である酸化珪素を添加すること
で導電性に寄与する体積を減少させ、膜の抵抗率を添加
量により調整することができる。BEST MODE FOR CARRYING OUT THE INVENTION The resistivity of ITO can be increased by decreasing the tin oxide concentration, but the tin oxide composition is extremely small due to the resistivity to be obtained, so that the reproducibility is good. It becomes difficult to obtain a sintered body that is a raw material for film formation. Therefore, it is preferable that the weight ratio of tin oxide for ITO is 0.02 to 0. 10 with respect to the total weight of indium oxide and tin oxide. Further, by adding silicon oxide, which is a non-conductive substance, the volume contributing to conductivity can be reduced, and the resistivity of the film can be adjusted by the addition amount.
【０００８】その最適な添加量の範囲は、酸化珪素２〜
４０ｗｔ．％である。酸化珪素の添加量が多すぎると抵
抗率が上がりすぎるため膜厚を厚くしなければならない
ので、その添加量には上限がある。最大の添加量は膜厚
にも依存するが４０ｗｔ．％以下であることが望まし
い。また、若干の酸化チタンを添加することにより、同
様に低効率を上昇させ、さらにガラス基板への接着性を
向上させることが出来る。しかし、酸化チタンを５ｗ
ｔ．％を超えて添加すると逆に膜の付着強度が低下する
ため、その添加量には上限がある。このようなターゲッ
トを使用することにより、シート抵抗５００Ω／□以上
の高抵抗膜を容易に形成することが可能となり、抵抗膜
式タッチパネル等に好適な、高い表面抵抗率を有する透
明導電膜を得ることができる。[0008] The optimum range of addition amount of silicon oxide is
40 wt. %. If the amount of silicon oxide added is too large, the resistivity increases too much, so the film thickness must be made thicker, so there is an upper limit to the amount added. The maximum addition amount depends on the film thickness, but 40 wt. % Or less is desirable. Further, by adding a small amount of titanium oxide, it is possible to similarly raise the low efficiency and further improve the adhesiveness to the glass substrate. However, titanium oxide 5w
t. If it is added in excess of%, on the contrary, the adhesion strength of the film will decrease, so there is an upper limit to the amount of addition. By using such a target, a high resistance film having a sheet resistance of 500 Ω / □ or more can be easily formed, and a transparent conductive film having a high surface resistivity suitable for a resistance film type touch panel or the like can be obtained. be able to.
【０００９】本発明のターゲットを用いて成膜する際の
スパッタリング法は、陰極に設置したターゲットにＡｒ
イオンなどの正イオンを物理的に衝突させ、その衝突エ
ネルギーでターゲットを構成する材料を放出させて、対
面している陽極側の基板にターゲット材料とほぼ同組成
の膜を積層することによって行われる薄膜形成方法であ
り、処理時間や供給電力等を調節することによって、安
定した成膜速度で数ｎｍの薄い膜から数十μｍの厚い膜
まで形成できる。ＩＴＯのスパッタリングは、成膜時の
プロセスコントロールが比較的容易で、生産性が高いと
いう理由から、工業的にはＤＣマグネトロンスパッタリ
ング法が広く用いられている。本発明は、このような成
膜方法に好適なスパッタリングターゲットを提供するこ
とができる。The sputtering method for forming a film using the target of the present invention is carried out by using a target placed on the cathode as Ar.
It is carried out by physically colliding positive ions such as ions, releasing the material constituting the target with the collision energy, and laminating a film of the same composition as the target material on the facing anode side substrate. This is a thin film forming method, and a thin film of several nm to a thick film of several tens of μm can be formed at a stable film formation rate by adjusting the processing time, supply power, and the like. For the sputtering of ITO, the DC magnetron sputtering method is widely used industrially because the process control during film formation is relatively easy and the productivity is high. The present invention can provide a sputtering target suitable for such a film forming method.
【００１０】[0010]
【実施例及び比較例】次に、本発明の実施例について説
明する。なお、本実施例はあくまで一例であり、この例
に制限されるものではない。すなわち、本発明の技術思
想の範囲内で、実施例以外の態様あるいは変形を全て包
含するものである。Examples and Comparative Examples Next, examples of the present invention will be described. The present embodiment is merely an example, and the present invention is not limited to this example. That is, it includes all aspects or modifications other than the examples within the scope of the technical idea of the present invention.
【００１１】（ターゲットの作製）適量の純水に酸化イ
ンジウム粉、酸化錫粉、酸化珪素粉、酸化チタン粉を各
々所定の割合で混合しスラリーとした後、湿式媒体ミル
で混合粉砕する。粉末の割合を表１に示す。表１におい
て、試料番号１、６、１１は、本発明の酸化珪素又は酸
化チタンを添加していない酸化インジウム粉、酸化錫粉
からなる比較例であり、試料番号２〜５、試料番号７〜
１０及び試料番号１２〜１５は酸化珪素を添加した本発
明の実施例、試料番号１６〜２３はさらに酸化チタンを
添加した本発明の実施例を示す。(Production of Target) Indium oxide powder, tin oxide powder, silicon oxide powder, and titanium oxide powder are mixed in a proper amount in pure water at a predetermined ratio to form a slurry, which is then mixed and ground by a wet medium mill. The powder ratio is shown in Table 1. In Table 1, sample numbers 1, 6, and 11 are comparative examples made of indium oxide powder and tin oxide powder to which the silicon oxide or titanium oxide of the present invention is not added, and sample numbers 2 to 5 and sample number 7 to
10 and sample Nos. 12 to 15 show examples of the present invention to which silicon oxide was added, and sample Nos. 16 to 23 show examples of the present invention to which titanium oxide was further added.
【００１２】上記湿式媒体ミルで混合粉砕する際に、ス
ラリーの凝集が生じ、粉砕効率が低下する場合は、分散
剤などを加えて粉砕する。粉砕したスラリーはＰＶＡ等
のバインダーを適量添加した後、噴霧式乾燥装置などで
乾燥する。得られた乾燥粉をプレスにより成型し、成型
体を酸素雰囲気中で焼結することで焼結体を得る。例え
ば、上記混合粉末を金型に均一充填し、冷間油圧プレス
で８０ＭＰａの圧力を加えて成形し、さらに１６０ＭＰ
ａの圧力で冷間静水圧プレスする。When agglomeration of the slurry occurs and the pulverization efficiency decreases when mixed and pulverized by the wet medium mill, a dispersant or the like is added for pulverization. An appropriate amount of binder such as PVA is added to the crushed slurry, which is then dried by a spray-type drying device or the like. The obtained dry powder is molded by a press and the molded body is sintered in an oxygen atmosphere to obtain a sintered body. For example, the above-mentioned mixed powder is uniformly filled in a mold, and a pressure of 80 MPa is applied by a cold hydraulic press for molding, and 160 MPa
Cold isostatic pressing at a pressure of a.
【００１３】この成形体をさらに、純酸素雰囲気中、最
高温度１６００°Ｃで焼結する。適切な焼結温度は１４
００°Ｃ以上であるが、組成により変化するので、あら
かじめ予備実験で最適な値を知っておく必要がある。得
られた焼結体を、平面研削盤でダイヤモンド砥石を用い
て研削し、さらに側片を、ダイヤモンドカッターを用い
て切断する。このターゲット切断ピースを銅製のバッキ
ングプレートにメタルボンディングし、ターゲット表面
を研磨仕上げしてスパッタリングターゲットとする。上
記の粉末の混合、成形、焼結、研削によりターゲットに
する工程及び条件は、一例でありこれらの条件に制限さ
れない。原料粉末又はターゲットの組成により、その条
件を任意に変えることができる。The compact is further sintered in a pure oxygen atmosphere at a maximum temperature of 1600 ° C. Suitable sintering temperature is 14
Although it is more than 00 ° C, it varies depending on the composition, so it is necessary to know the optimum value in advance through preliminary experiments. The obtained sintered body is ground with a diamond grindstone on a surface grinder, and the side pieces are cut with a diamond cutter. This target cutting piece is metal-bonded to a copper backing plate, and the target surface is polished and finished to form a sputtering target. The steps and conditions for targeting the above powders by mixing, molding, sintering, and grinding are examples, and the present invention is not limited to these conditions. The conditions can be arbitrarily changed depending on the composition of the raw material powder or the target.
【００１４】[0014]
【表１】 [Table 1]
【００１５】（ターゲット及びターゲットの特性評価）
上記に示す作製方法で表１に示す試料番号１〜２３のタ
ーゲットを作製し、ＤＣマグネトロンスパッタリング法
でガラス基板上に２００ｎｍの膜を作製した。スパッタ
リング条件は、次の通りである。得られた膜の特性を測
定した。
ターゲットサイズ：１２７×５０８×６．３５ｍｍ
基板温度：２００°Ｃ
スパッタガス：Ａｒ＋Ｏ２
スパッタガス圧：０．５Ｐａ
スパッタガス流量：３００ＳＣＣＭ
スパッタガス中の酸素濃度：１ｖｏｌ％
漏洩磁束密度：０．１Ｔ
投入スパッタパワー：１５００Ｗ(Target and Target Characteristic Evaluation)
The targets of Sample Nos. 1 to 23 shown in Table 1 were prepared by the above-described manufacturing method, and a 200 nm film was formed on the glass substrate by the DC magnetron sputtering method. The sputtering conditions are as follows. The characteristics of the obtained film were measured. Target size: 127 × 508 × 6.35 mm Substrate temperature: 200 ° C. Sputtering gas: Ar + O 2 Sputtering gas pressure: 0.5 Pa Sputtering gas flow rate: 300 SCCM Oxygen concentration in sputtering gas: 1 vol% Leakage magnetic flux density: 0.1 T Input Sputter power: 1500W
【００１６】得られた膜について、シート抵抗及び膜の
付着力の評価を行った。シート抵抗は４端子法により測
定した。付着力は膜に粘着テープを一定の圧力で貼り付
けて直角に引き剥がす試験を数回行い、剥離の程度で次
の様に評価した。この結果を同様に表１に示す。表中、
◎：全く剥離が見られない、○：若干の剥離が発生する
こともある、△：必ず剥離が発生、である。また、図１
は酸化チタンを添加していない、実施例の試料番号２〜
１５及び比較例の試料番号１、６、１１に関する膜のシ
ート抵抗の、酸化珪素の濃度依存性を示すグラフであ
り、図２はＳｎＯ２／（Ｉｎ２Ｏ３＋ＳｎＯ２）＝０．
０５である膜のシート抵抗の酸化チタン濃度依存性を示
す図である。The obtained film was evaluated for sheet resistance and film adhesion. The sheet resistance was measured by the 4-terminal method. The adhesive strength was evaluated by sticking an adhesive tape to the film at a constant pressure and peeling it off at right angles several times, and evaluating the degree of peeling as follows. The results are also shown in Table 1. In the table,
⊚: No peeling is observed at all, ◯: Some peeling may occur, and Δ: peeling always occurs. Also, FIG.
Is the sample number 2 of the example in which titanium oxide is not added.
15 and the sheet resistance of the film for the samples No. 1, 6, and 11 of the comparative example, a graph showing the concentration-dependence of the silicon oxide, 2 SnO 2 / (In 2 O 3 + SnO 2) = 0.
It is a figure which shows the titanium oxide concentration dependence of the sheet resistance of the film which is 05.
【００１７】表１及び図１よりシート抵抗は酸化珪素の
添加量により変化させることが出来ることが容易に理解
できる。表１及び図１から、シート抵抗を５００〜２０
００Ω／□程度とするには、ＳｎＯ２／（Ｉｎ２Ｏ３＋
ＳｎＯ２）＝０．０２の膜では酸化珪素が２〜８ｗｔ．
％で抵抗膜型透明タッチパネル用の透明導電膜として適
していることが分かる。同様に、ＳｎＯ２／（Ｉｎ２Ｏ
３＋ＳｎＯ２）＝０．０５の膜では酸化珪素が５〜２２
ｗｔ．％で抵抗膜型透明タッチパネル用の透明導電膜と
して適している。また、ＳｎＯ２／（Ｉｎ２Ｏ３＋Ｓｎ
Ｏ２）＝０．１０の膜では酸化珪素が７〜４０ｗｔ．％
で抵抗膜型透明タッチパネル用の透明導電膜として適し
ている。シート抵抗をさらに増加させる必要がある場合
には、酸化珪素の割合を増加させることにより達成でき
る。From Table 1 and FIG. 1, it can be easily understood that the sheet resistance can be changed by the addition amount of silicon oxide. From Table 1 and FIG. 1, the sheet resistance is 500 to 20.
SnO 2 / (In 2 O 3 + is required to achieve about 00Ω / □.
SnO 2 ) = 0.02 contains 2 to 8 wt.% Of silicon oxide.
It can be seen that it is suitable as a transparent conductive film for a resistance film type transparent touch panel in%. Similarly, SnO 2 / (In 2 O
3 + SnO 2 ) = 0.05, the silicon oxide is 5-22.
wt. %, It is suitable as a transparent conductive film for a resistance film type transparent touch panel. In addition, SnO 2 / (In 2 O 3 + Sn
O 2 ) = 0.10 contains 7 to 40 wt.% Of silicon oxide. %
Therefore, it is suitable as a transparent conductive film for a resistance film type transparent touch panel. If it is necessary to further increase the sheet resistance, it can be achieved by increasing the proportion of silicon oxide.
【００１８】酸化珪素を添加するとシート抵抗は急速に
増加するが、酸化錫の比率を増すことにより、そのシー
ト抵抗の増加を緩和する効果がある。したがって、酸化
錫と酸化インジウムの比率、すなわちＳｎＯ２／（Ｉｎ
２Ｏ３＋ＳｎＯ２）は重要であり、膜の目的に応じて酸
化錫の添加量及び酸化珪素の添加量を適宜調節すること
が必要である。また、図２から明らかなように、酸化チ
タンを添加しても、酸化珪素に比較して、シート抵抗は
殆ど変化しないが、表1の付着強度評価より酸化チタン
が２ｗｔ．％で最も付着性が良く６ｗｔ．％では悪化し
ている。したがって、酸化チタンの量は１〜５ｗｔ．％
の範囲に制限するのが望ましい。Although the sheet resistance increases rapidly when silicon oxide is added, increasing the proportion of tin oxide has the effect of reducing the increase in the sheet resistance. Therefore, the ratio of tin oxide and indium oxide, that is, SnO 2 / (In
2 O 3 + SnO 2 ) is important, and it is necessary to appropriately adjust the amount of tin oxide added and the amount of silicon oxide added depending on the purpose of the film. Further, as is clear from FIG. 2, even if titanium oxide is added, the sheet resistance hardly changes as compared with silicon oxide, but according to the adhesion strength evaluation of Table 1, 2 wt. %, The best adhesion is 6 wt. % Is getting worse. Therefore, the amount of titanium oxide is 1 to 5 wt. %
It is desirable to limit the range.
【００１９】[0019]
【発明の効果】以上に示すように、本発明は酸化インジ
ウムと酸化錫を主成分とし、さらに酸化ケイ素又は酸化
チタンの少なくとも一方を含有するターゲットを使用す
ることにより、透明導電膜としての特性を低減すること
なく、高抵抗の透明導電膜、特に抵抗膜式タッチパネル
用として５００〜２０００Ω／□程度の高い表面抵抗率
を有する透明導電膜形成に有用である高抵抗透明導電性
膜用スパッタリングターゲットを得ることができるとい
う優れた特性を有している。また、酸化チタンを少量添
加することにより、同様に表面低効率を上げ、さらにガ
ラス基板への付着強度を増加させることができるという
著しい効果が得られる。さらに、酸化ケイ素又は酸化チ
タンを添加することにより、熱、湿度、アルカリ腐蝕、
屈曲やカールなどの機械的変形、ペン衝突摩耗などの種
々の環境に対して、従来のタッチパネル用材と同程度又
はさらに向上した耐久性を有するタッチパネル用材料を
得ることができるという効果を有する。As described above, according to the present invention, by using a target containing indium oxide and tin oxide as main components and further containing at least one of silicon oxide and titanium oxide, the characteristics as a transparent conductive film can be improved. A sputtering target for a high resistance transparent conductive film, which is useful for forming a transparent conductive film having a high surface resistivity of about 500 to 2000 Ω / □ for a resistance film type touch panel, in particular, a resistance film type touch panel without reduction. It has excellent characteristics that it can be obtained. Further, by adding a small amount of titanium oxide, it is possible to obtain a remarkable effect that the surface low efficiency can be similarly increased and the adhesion strength to the glass substrate can be increased. Furthermore, by adding silicon oxide or titanium oxide, heat, humidity, alkali corrosion,
The present invention has an effect that a touch panel material having durability equivalent to or more improved than that of a conventional touch panel material can be obtained against various environments such as mechanical deformation such as bending and curling, and pen collision wear.
【図１】酸化チタンを添加していない膜のシート抵抗の
酸化珪素濃度依存性を示す図である。FIG. 1 is a diagram showing the dependence of sheet resistance of a film to which titanium oxide is not added on the silicon oxide concentration.
【図２】ＳｎＯ２／（Ｉｎ２Ｏ３＋ＳｎＯ２）＝０．０
５である膜のシート抵抗の酸化チタン濃度依存性を示す
図である。FIG. 2 SnO 2 / (In 2 O 3 + SnO 2 ) = 0.0
5 is a diagram showing the dependence of sheet resistance of the film of No. 5 on the titanium oxide concentration. FIG.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G030 AA16 AA34 AA37 AA39 BA02 BA15 4K029 BA45 BA50 BC09 BD00 DC05 DC09 5G307 FB01 FC10 5G323 BA02 BB05 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 4G030 AA16 AA34 AA37 AA39 BA02 BA15 4K029 BA45 BA50 BC09 BD00 DC05 DC09 5G307 FB01 FC10 5G323 BA02 BB05
Claims (3)
焼結体であって、さらに酸化ケイ素又は酸化チタンの少
なくとも一方を含有することを特徴とする高抵抗透明導
電性膜用スパッタリングターゲット。1. A sputtering target for a high resistance transparent conductive film, which is a sintered body containing indium oxide and tin oxide as main components and further containing at least one of silicon oxide and titanium oxide.
化錫の重量の合計に対して０．０２〜０．１０であるこ
とを特徴とする請求項１記載の高抵抗透明導電性膜用ス
パッタリングターゲット。2. The sputtering for a high resistance transparent conductive film according to claim 1, wherein the weight ratio of tin oxide is 0.02 to 0. 10 with respect to the total weight of indium oxide and tin oxide. target.
％、酸化チタンの含有量が１〜５ｗｔ％であることを特
徴とする請求項１又は２に記載の高抵抗透明導電性膜用
スパッタリングターゲット。3. The content of silicon oxide is 2 to 40 wt.
%, And the content of titanium oxide is 1 to 5 wt%, The sputtering target for a high resistance transparent conductive film according to claim 1 or 2, wherein
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| JP2002076037A JP4028269B2 (en) | 2002-03-19 | 2002-03-19 | Sputtering target for high resistance transparent conductive film |
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